A module and a manufacturing method thereof

Abstract

The present invention provides a module and a manufacturing method thereof, comprising: a plastic-encapsulated housing, a metal plate disposed within the plastic-encapsulated housing, an insulating layer, a lead frame circuit layer, a heat sink, a power device chip, a fast recovery diode chip, aluminum wire, a driver IC chip, a capacitance and resistance device, and pins disposed on both sides of the metal plate, wherein the insulating layer is attached to both sides of the metal plate, the surface of the insulating layer is attached to the lead frame circuit layer, the heat sink, the driver IC chip, and the capacitance and resistance device are attached to the lead frame circuit layer to achieve electrical connection, the power device chip and the fast recovery diode chip are attached to the heat sink to achieve electrical connection, and the pins are electrically connected to an external circuit board. The present invention saves installation space of the module on an electronic control board and improves module installation efficiency; installing the aforementioned components within the plastic-encapsulated housing can protect the components within.

Description

Technical Field

[0001] The present invention relates to the technical field of modular intelligent power systems, and in particular to a module and a manufacturing method thereof. Background Art

[0002] As society continues to progress, the demand for electrical equipment is also evolving. A power device, or MIPS (Module Intelligent Power System), is a power driver product that combines power electronics and integrated circuit technologies. MIPS not only integrates power switching devices and driver circuitry, but also features built-in fault detection circuitry for overvoltage, overcurrent, and overtemperature, sending detection signals to the CPU or DSP for interrupt processing. It consists of a high-speed, low-power die, optimized gate-level driver circuitry, and fast protection circuitry. This protects the MIPS from damage even in the event of load failures or improper use. MIPS typically uses IGBTs as power switching elements and integrates current sensors and driver circuitry. Traditional intelligent power modules typically use high-voltage driver ICs to drive the IGBTs, typically employing a six-way three-phase full-bridge driver. They are widely used in industrial control, household appliances, and other fields.

[0003] Existing MIPS modular intelligent power systems combine low-voltage control circuits such as IC driver control circuits, MIPS sampling and amplification circuits, and PFC current protection circuits with inverter circuits composed of high-voltage power devices, all on the same board to control the operation of a single DC motor. In response to market demand for energy-saving and variable-frequency operation, an increasing number of MIPS modules are being incorporated into white goods. Some appliances even use multiple MIPS modules. For example, an air conditioner's compressor, outdoor cooling fan, and indoor fan each require a MIPS module. Consequently, modules integrating multiple inverter units have emerged on the market. However, the placement of multiple inverter units on the same side of an aluminum plate increases the module's size. Furthermore, the market's demand for miniaturization and low-cost competition places higher demands on MIPS modular intelligent power systems.

[0004] However, the above-mentioned power module is difficult to install as a whole, occupies a large amount of installation space, has low production efficiency, poor motor control effect, and has a small scope of application. Summary of the Invention

[0005] In view of the deficiencies of the above related technologies, the present invention proposes a module and a manufacturing method thereof that effectively saves installation space, has good control effect and high production efficiency.

[0006] In order to solve the above technical problems, in the first aspect, an embodiment of the present invention provides a module, including: a plastic-encapsulated shell, a metal plate arranged in the plastic-encapsulated shell, an insulating layer, a lead frame circuit layer, a heat sink, a power device chip, a fast recovery diode chip, an aluminum wire, a driver IC chip, a capacitance and resistance device, and pins arranged on both sides of the metal plate, the insulating layer is attached to both sides of the metal plate, the surface of the insulating layer is attached to the lead frame circuit layer respectively, the heat sink, the driver IC chip and the capacitance and resistance device are respectively attached to the lead frame circuit layer to achieve electrical connection, the power device chip and the fast recovery diode chip are respectively attached to the heat sink to achieve electrical connection, and the pins are electrically connected to the external circuit board.

[0007] Preferably, a plurality of heat dissipation holes are provided through the metal plate.

[0008] Preferably, the plurality of heat dissipation holes are evenly distributed in the metal plate.

[0009] Preferably, the plurality of heat dissipation holes are circular structures.

[0010] Preferably, the aluminum wire includes thick aluminum wire and thin aluminum wire, the thick aluminum wire is respectively connected to the power device chip, the fast recovery diode chip and the lead frame circuit layer, and the thin aluminum wire is respectively connected to the power device chip and the lead frame circuit layer.

[0011] Preferably, the lead frame circuit layer is a copper lead frame circuit layer.

[0012] Preferably, the metal plate is a copper plate or an aluminum plate.

[0013] Preferably, the insulating layer is made of epoxy resin material.

[0014] Preferably, the power device chip is an IGBT chip.

[0015] In a second aspect, an embodiment of the present invention further provides a method for manufacturing a module, the method comprising the following steps:

[0016] S1. Lamination: Attach an insulating layer on each side of the metal plate and a copper lead frame to the outside of the sheet, then place it in a laminator and press it into a whole as the module substrate.

[0017] S2. Soft material welding: Heat the copper heat sink to about 350°C in a nitrogen-protected environment, apply a layer of solder with a melting point of 330°C on the surface of the heat sink, and mount the power device chip and fast recovery diode chip on the heat sink;

[0018] S3, First solder paste printing: Brush solder paste with a melting point of 280°C on the metal plate where the device is to be mounted;

[0019] S4, first SMT patch: mount the heat sink assembly with power devices, capacitors, and resistors onto the heat sink;

[0020] S5. First chip installation: mount the driver IC chip on the metal plate;

[0021] S6. Install the pins for the first time: mount the pins on the corresponding solder joints on the metal plate;

[0022] S7, first reflow soldering: the product passes through a reflow oven with a peak temperature set at 300°C to solidify the power device chip onto the metal plate;

[0023] S8, Second solder paste printing: Brush solder paste with a melting point of 210°C on the metal plate where the device is to be mounted;

[0024] S9, Second SMT patch: mount the heat sink assembly with power devices, capacitors, and resistors onto the heat sink;

[0025] S10, second chip installation: mounting the driver chip on the metal plate;

[0026] S11. Install the pins for the second time: mount the pins on the corresponding solder joints on the metal plate;

[0027] S12, second reflow soldering: the product passes through a reflow oven with a peak temperature set at 230° C. to solidify the power device chip onto the metal plate;

[0028] S13, Ultrasonic cleaning: remove residual flux on the product surface through ultrasonic waves;

[0029] S14, thick aluminum wire welding: weld a 20 mil diameter aluminum wire between the power device chip drain solder joint, the fast recovery diode chip solder joint, and the metal plate solder joint to achieve electrical connection between them;

[0030] S15. Thin aluminum wire welding: Weld aluminum wires with a diameter of 1.5 mils between the driver IC chip solder joints and the metal plate solder joints, and between the gate solder joints of the power device chip and the metal plate solder joints to achieve electrical connection between them;

[0031] S16, injection molding and fixing: encapsulating the product into the interior of the plastic packaging material by injection molding;

[0032] S17, laser marking: marking product information on the outer shell of the product plastic packaging material;

[0033] S18, Manufacturing and Forming: Punching and bending the pins into the required shape.

[0034] Compared with the related art, the present invention forms a complete inverter unit by attaching the insulating layer to both sides of the metal plate, installing circuit wiring on both sides of the metal plate through a lamination process, and mounting components separately; components are mounted on the two sides using solder pastes with different melting points to prevent components on the first side from detaching from the metal plate during reflow soldering on the second side; the surfaces of the insulating layer are attached to the lead frame circuit layer, the heat sink, the driver IC chip and the capacitive resistor are attached to the lead frame circuit layer to achieve electrical connection, the power device chip and the fast recovery diode chip are attached to the heat sink to achieve electrical connection, and the pins are electrically connected to the external circuit board; a complete inverter circuit is formed by mounting components on both sides of the metal plate, and a single module can control the operation of two DC motors at the same time while occupying the same area of ​​the electric control board; no external heat sink is required, which saves the installation space of the module on the electric control board and improves the module installation efficiency; the above-mentioned devices are installed in a plastic package shell to protect the internal devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The present invention will be described in detail below with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made with reference to the following drawings. In the accompanying drawings:

[0036] Figure 1 Schematic diagram of the structure of the module of the present invention;

[0037] Figure 2 Schematic diagram of the three-dimensional structure of the module of the present invention;

[0038] Figure 3 Schematic diagram of the three-dimensional structure of the module of the present invention;

[0039] Figure 4 Flowchart of the manufacturing method of the module of the present invention.

[0040] In the figure, 101 is a metal plate, 102 is an insulating layer, 103 is a lead frame circuit layer, 104 is a heat sink, 105 is a power device, 106 is a fast recovery diode chip, 107 is a thick aluminum wire, 108 is a thin aluminum wire, 109 is a driver IC chip, 110 is a capacitive resistor device, 111 is a pin, 112 is a plastic package shell, 113 is a through hole, and 114 is a resistor. DETAILED DESCRIPTION

[0041] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0042] The specific embodiments / examples described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention. They are illustrative and exemplary and should not be construed as limiting the embodiments of the present invention or the scope of the present invention. In addition to the examples described herein, those skilled in the art can also adopt other obvious technical solutions based on the claims and the disclosure of the specification. These technical solutions, including any obvious replacements and modifications of the embodiments described herein, are all within the scope of protection of the present invention.

[0043] Example 1

[0044] Please refer to Figure 1-3 As shown, Figure 1 Schematic diagram of the structure of the module of the present invention; Figure 2 Schematic diagram of the three-dimensional structure of the module of the present invention; Figure 3 The present invention provides a three-dimensional structural diagram of a module, comprising: a plastic-encapsulated housing 112, a metal plate 101 disposed within the plastic-encapsulated housing 112, an insulating layer 102, a lead frame circuit layer 103, a heat sink 104, a power device chip, a fast recovery diode chip 106, aluminum wire, a driver IC chip 109, a capacitance resistor 110, and pins 111 disposed on both sides of the metal plate 101, wherein the insulating layer 102 is attached to both sides of the metal plate 101, the surfaces of the insulating layer 102 are attached to the lead frame circuit layer 103, the heat sink 104, the driver IC chip 109, and the capacitance resistor 110 are attached to the lead frame circuit layer 103 to achieve electrical connection, the power device chip 105 and the fast recovery diode chip 106 are attached to the heat sink 104 to achieve electrical connection, and the pins 111 are electrically connected to an external circuit board.

[0045] The heat sink 104, power device chip 105, fast recovery diode chip 106, aluminum wire, driver IC chip 109, and capacitance and resistance device 110 are provided on the metal plate 101. The pins 111 are provided in plurality and arranged side by side on both sides or on the same side of the metal plate 101.

[0046] Specifically, the insulating layer 102 is attached to both sides of the metal plate 101, circuit wiring is installed on both sides of the metal plate 101 through a lamination process, and components are mounted respectively to form a complete inverter unit; solder pastes with different melting points are used to mount components on the two sides to prevent the first side components from being separated from the metal plate during reflow soldering on the second side; the surfaces of the insulating layer 102 are attached to the lead frame circuit layer 103, and the heat sink 104, the driver IC chip 109 and the capacitive resistor 110 are respectively attached to the lead frame circuit layer 103 to realize electrical insulation. The power device chip 105 and the fast recovery diode chip 106 are respectively attached to the heat sink 104 to achieve electrical connection, and the pin 111 is electrically connected to the external circuit board. By mounting components on both sides of the metal plate 101 to form a complete inverter circuit, a single module can control the operation of two DC motors while maintaining the area of ​​the electronic control board. No external heat sink is required, which saves the installation space of the module on the electronic control board and improves the module installation efficiency. The above-mentioned devices are installed in a plastic package to protect the internal devices.

[0047] In this embodiment, a plurality of heat dissipation holes 113 are provided through the metal plate 101. This can increase the surface area of ​​the metal plate in contact with the outside world and improve the heat dissipation performance. The metal plate 101 can be designed as an air-cooled or water-cooled type as needed to achieve better heat dissipation effect.

[0048] In this embodiment, the plurality of heat dissipation holes 113 are evenly distributed in the metal plate 101. The pins 111 on both sides of the metal plate 101 point to the same side of the module. The heat dissipation holes of the metal plate 101 are arranged in a square shape with a larger surface area for air cooling.

[0049] In this embodiment, the plurality of heat dissipation holes 113 are circular structures, which can be connected to external water pipes for water cooling.

[0050] In this embodiment, the aluminum wires include thick aluminum wires 107 and thin aluminum wires 108. The thick aluminum wires 107 are connected to the power device chip 105, the fast recovery diode chip 106, and the lead frame circuit layer 103, respectively. The thin aluminum wires 108 are connected to the power device chip 105 and the lead frame circuit layer 103, respectively. This facilitates connection between the power device chip 105, the fast recovery diode chip 106, the lead frame circuit layer, etc., and provides better electrical conductivity.

[0051] In this embodiment, the lead frame circuit layer 103 is a copper lead frame circuit layer 103, which has good electrical conductivity.

[0052] In this embodiment, the metal plate 101 is a copper plate or an aluminum plate, which has high structural strength and good electrical conductivity.

[0053] In this embodiment, the insulating layer 102 is made of epoxy resin. Epoxy resin has excellent physical, mechanical, and electrical insulation properties, excellent adhesion to various materials, and flexible processing. This gives the insulating layer 102 good heat resistance and electrical insulation, resulting in a good insulation effect.

[0054] In this embodiment, the power device chip 105 is an IGBT chip. An IGBT (Insulated Gate Bipolar Transistor) chip, also known as an insulated gate bipolar transistor, is a composite, fully controlled, voltage-driven power semiconductor device composed of a BJT (bipolar junction transistor) and a MOS (insulated gate field effect transistor). It combines the advantages of a MOSFET's high input impedance with the GTR's low on-state voltage drop.

[0055] Example 2

[0056] like Figure 4 As shown, Figure 4 Flowchart of a method for manufacturing a module of the present invention; an embodiment of the present invention further provides a method for manufacturing a module, the method comprising the following steps:

[0057] S1. Lamination: Attach an insulating layer 102 to both sides of the metal plate 101 and attach a copper lead frame to the outside of the sheet. Put it into a laminator and press it into a whole as a module substrate.

[0058] S2. Soft material welding: Heat the copper heat sink 104 to about 350°C in a nitrogen-protected environment, apply a layer of solder with a melting point of 330°C on the surface of the heat sink 104 , and mount the power device chip 105 and the fast recovery diode chip 106 on the heat sink 104 .

[0059] S3. First solder paste printing: Brush solder paste with a melting point of 280° C. on the metal plate 101 at the location where the device is to be mounted.

[0060] S4, first SMT patch: mount the heat sink assembly with power devices, capacitors, and resistors 114 onto the heat sink 104.

[0061] S5 , first chip mounting: mounting the driver IC chip 109 on the metal plate 101 .

[0062] S6. Installing the pin 111 for the first time: mounting the pin 111 on the corresponding solder joint of the metal plate 101 .

[0063] S7 , first reflow soldering: the product passes through a reflow furnace with a peak temperature set at 300° C. to solidify the power device chip 105 onto the metal plate 101 .

[0064] S8. Second solder paste printing: Brush solder paste with a melting point of 210° C. on the metal plate 101 at the location where the device is to be mounted.

[0065] S9, second SMT patch: mount the heat sink 104 components with power devices, capacitors, and resistors 114 onto the heat sink 104.

[0066] S10 , second chip mounting: mounting the driver chip on the metal plate 101 .

[0067] S11 , installing the pins for the second time: mounting the pins 111 on the corresponding solder joints of the metal plate 101 .

[0068] S12, second reflow soldering: the product passes through a reflow furnace with a peak temperature set at 230°C to solidify the power device chip 105 onto the metal plate 101.

[0069] S13, Ultrasonic cleaning: Use ultrasonic waves to remove residual flux on the product surface.

[0070] S14, thick aluminum wire welding: weld aluminum wires with a diameter of 20 mils between the drain solder joints of the power device chip 105, the solder joints of the fast recovery diode chip 106, and the solder joints of the metal plate 101 to achieve electrical connection therebetween.

[0071] S15, thin aluminum wire welding: welding aluminum wires with a diameter of 1.5 mil between the soldering points of the driver IC chip 109 and the soldering points of the metal plate 101, and between the gate soldering points of the power device chip 105 and the soldering points of the metal plate 101 to achieve electrical connection between them.

[0072] S16, injection molding and fixing: the product is encapsulated into the interior of the plastic packaging material by injection molding.

[0073] S17, laser marking: marking product information on the outer shell 112 of the product plastic packaging material.

[0074] S18, manufacturing and forming: punching and bending the pins 111 into a required shape.

[0075] Specifically, an insulating layer 102 is attached to each side of the metal plate 101 and a copper lead frame is attached to the outside of the sheet, and the sheet is placed in a laminator and pressed into a whole as a substrate of the module; the copper heat sink 104 is heated to about 350°C in a nitrogen-protected environment, a layer of solder with a melting point of 330°C is applied to the surface of the heat sink 104, and the power device chip 105 and the fast recovery diode chip 106 are mounted on the heat sink 104; the melting point solder is brushed on the metal plate 101 at the position where the device is mounted. 280℃ solder paste; mount the heat sink 104 components, capacitors, and resistors 114 mounted with power devices on the heat sink 104; mount the driver IC chip 109 on the metal plate 101; mount the pins 111 on the corresponding solder joints of the metal plate 101; pass the product through a reflow oven with a peak temperature set at 300℃ to solidify the power device chip 105 on the metal plate 101; apply solder paste with a melting point of 210℃ on the metal plate 101 where the device is mounted; The heat sink 104 components, capacitors, and resistors 114 of the power device are mounted on the heat sink 104; the driver chip is mounted on the metal plate 101; the pins 111 are mounted on the corresponding solder joints of the metal plate 101; the product is cured on the metal plate 101 by passing the power device chip 105 through a reflow oven with a peak temperature set to 230°C; the residual flux on the surface of the product is removed by ultrasonic wave; a 20 mil diameter aluminum wire is welded between the drain solder joint of the power device chip 105, the solder joint of the fast recovery diode chip 106, and the solder joint of the metal plate 101 to achieve electrical connection between them; a 1.5 mil diameter aluminum wire is welded between the solder joint of the driver IC chip 109 and the solder joint of the metal plate 101, and between the gate solder joint of the power device chip 105 and the solder joint of the metal plate 101 to achieve electrical connection between them; the product is encapsulated in the interior of the plastic packaging material by injection molding; the product information is printed on the outer shell 112 of the plastic packaging material of the product; the pins 111 are punched and bent into the required shape. By mounting components on both sides of a metal plate to form a complete inverter circuit, a single module can simultaneously control the operation of two DC motors while maintaining the same area of ​​the electronic control board. This eliminates the need for an external heat sink, saving installation space on the electronic control board and improving module installation efficiency. Installing the aforementioned components in a plastic-encapsulated housing protects the internal components.

[0076] Compared with the related art, the present invention forms a complete inverter unit by attaching the insulating layer to both sides of the metal plate, installing circuit wiring on both sides of the metal plate through a lamination process, and mounting components separately; the two sides use solder pastes with different melting points to mount components to prevent the first side components from detaching from the metal plate during reflow soldering on the second side; the surfaces of the insulating layer are attached to the lead frame circuit layer respectively, and the heat sink, the driver IC chip and the capacitance and resistance components are attached to the lead frame circuit layer respectively to achieve electrical connection, the power device chip and the fast recovery diode chip are attached to the heat sink respectively to achieve electrical connection, and the pins are electrically connected to the external circuit board; by mounting components on both sides of the metal plate respectively to form a complete inverter circuit, a single module can control the operation of two DC motors at the same time while occupying the same area of ​​the electric control board; no external heat sink is required, which saves the installation space of the module on the electric control board and improves the module installation efficiency; the above-mentioned devices are installed in a plastic package shell to protect the internal devices.

Claims

1. A method for manufacturing a module, the module comprising: A plastic housing, a metal plate disposed within the plastic housing, an insulating layer, a lead frame circuit layer, a heat sink, a power device chip, a fast recovery diode chip, an aluminum wire, a driver IC chip, a capacitance and resistance device, and pins disposed on both sides of the metal plate, wherein the insulating layer is attached to both sides of the metal plate, the surfaces of the insulating layer are attached to the lead frame circuit layer, the heat sink, the driver IC chip, and the capacitance and resistance device are attached to the lead frame circuit layer to achieve electrical connection, the power device chip and the fast recovery diode chip are attached to the heat sink to achieve electrical connection, and the pins are electrically connected to an external circuit board; A plurality of heat dissipation holes are provided through the metal plate; the plurality of heat dissipation holes are evenly distributed in the metal plate; the plurality of heat dissipation holes are circular in structure; The aluminum wires include thick aluminum wires and thin aluminum wires, the thick aluminum wires are respectively connected to the power device chip, the fast recovery diode chip and the lead frame circuit layer, and the thin aluminum wires are respectively connected to the power device chip and the lead frame circuit layer; the manufacturing method includes the following steps: S1. Lamination: Attach an insulating layer on each side of the metal plate and a copper lead frame to the outside of the sheet, then place it in a laminator and press it into a whole as the module substrate. S2. Soft material welding: Heat the copper heat sink to about 350°C in a nitrogen-protected environment, apply a layer of solder with a melting point of 330°C on the surface of the heat sink, and mount the power device chip and fast recovery diode chip on the heat sink; S3, First solder paste printing: Brush solder paste with a melting point of 280°C on the metal plate where the device is to be mounted; S4, first SMT patch: mount the heat sink assembly with power devices, capacitors, and resistors onto the heat sink; S5. First chip installation: mount the driver IC chip on the metal plate; S6. Install the pins for the first time: mount the pins on the corresponding solder joints on the metal plate; S7, first reflow soldering: the product passes through a reflow oven with a peak temperature set at 300°C to solidify the power device chip onto the metal plate; S8, Second solder paste printing: Brush solder paste with a melting point of 210°C on the metal plate where the device is to be mounted; S9, Second SMT patch: mount the heat sink assembly with power devices, capacitors, and resistors onto the heat sink; S10, second chip installation: mounting the driver chip on the metal plate; S11. Install the pins for the second time: mount the pins on the corresponding solder joints on the metal plate; S12, second reflow soldering: the product passes through a reflow oven with a peak temperature set at 230° C. to solidify the power device chip onto the metal plate; S13, Ultrasonic cleaning: remove residual flux on the product surface through ultrasonic waves; S14, thick aluminum wire welding: weld a 20 mil diameter aluminum wire between the power device chip drain solder joint, the fast recovery diode chip solder joint, and the metal plate solder joint to achieve electrical connection between them; S15. Thin aluminum wire welding: Weld aluminum wires with a diameter of 1.5 mils between the driver IC chip solder joints and the metal plate solder joints, and between the gate solder joints of the power device chip and the metal plate solder joints to achieve electrical connection between them; S16, injection molding and fixing: encapsulating the product into the interior of the plastic packaging material by injection molding; S17, laser marking: marking product information on the outer shell of the product plastic packaging material; S18, Manufacturing and Forming: Punching and bending the pins into the required shape.

2. The method for manufacturing a module according to claim 1, wherein: The lead frame circuit layer is a copper lead frame circuit layer.

3. The method for manufacturing a module according to claim 1, wherein: The metal plate is a copper plate or an aluminum plate.

4. The method for manufacturing a module according to claim 1, wherein: The insulating layer is made of epoxy resin material.

5. The method for manufacturing a module according to claim 1, wherein: The power device chip is an IGBT chip.

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