Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium

Abstract

Provided is a technology capable of performing uniform film formation processing on the surface of a substrate (wafer) disposed inside a reaction tube, in which a substrate processing device is configured to include: a reaction tube that houses a substrate inside; a nozzle housing portion that extends in a direction parallel to the surface of the substrate along the side of the reaction tube and is disposed in correspondence with the substrate; a gas supply nozzle that is inserted inside the nozzle housing portion and extends from the outside of the reaction tube to the inside of the reaction tube; and a first gas supply portion that supplies a first gas to the gas supply nozzle.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a storage medium. Background Technology

[0002] As a substrate processing apparatus for arranging multiple substrates as processing targets in multiple layers inside a reaction tube and processing the substrates, a substrate processing apparatus is described, comprising: a reaction vessel for performing a process of forming a film comprising multiple elements on a substrate; a heater for heating the reaction vessel; at least one nozzle, at least a portion of which is disposed inside the reaction vessel opposite to the heater, and supplying a first gas into the reaction vessel, the first gas containing at least one of the multiple elements constituting the film, and capable of depositing the film individually; and a flow tube configured to cover at least the portion of the nozzle opposite to the heater, and allowing a second gas to flow inside and supplying it into the reaction vessel, the second gas containing at least one of the multiple elements constituting the film, and unable to deposit the film individually. For example, Patent Document 1.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-244443 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] In a vertical substrate processing apparatus, nozzles are arranged vertically from the bottom of a reaction tube, and multiple holes are formed in the nozzles corresponding to the number of wafers disposed inside the reaction tube. In this structure, a first gas containing at least one of the multiple elements constituting the film and capable of individually depositing the film is injected from the nozzles into the interior of the reaction tube. The first gas is heated by a heater and decomposes inside the vertically extending nozzles. Therefore, the degree of decomposition differs in the vertical direction of the nozzles, resulting in different film formation states on wafers placed at the top and bottom of the reaction tube.

[0008] Solution for solving the problem

[0009] To address the aforementioned issues, in this disclosure, a substrate processing apparatus is configured to include: a reaction tube that houses a substrate; a nozzle receiving portion that extends along a direction parallel to the surface of the substrate on the side of the reaction tube and is disposed corresponding to the substrate; a plurality of gas supply nozzles that are inserted into the interior of the nozzle receiving portion and extend from the outside of the reaction tube to the interior of the reaction tube; and a first gas supply portion that supplies a first gas to the gas supply nozzles.

[0010] Invention Effects

[0011] According to this disclosure, the processing uniformity of each of multiple substrates can be improved. Attached Figure Description

[0012] Figure 1A This is a cross-sectional view showing the structure of the main parts of the substrate processing apparatus according to the first embodiment of the present disclosure.

[0013] Figure 1B This is a block diagram illustrating the structure of the controller of the substrate processing apparatus according to the first embodiment of the present disclosure.

[0014] Figure 2 This is a cross-sectional view showing the structure of the gas supply section of the substrate processing apparatus according to the first embodiment of this disclosure.

[0015] Figure 3 This is a block diagram illustrating the structure of a gas supply source according to a first embodiment of the present disclosure.

[0016] Figure 4 This is a cross-sectional view showing the state in which the gas supply section is assembled into the inner tube of the substrate processing apparatus according to the first embodiment of this disclosure.

[0017] Figure 5 This is a flowchart illustrating the processing flow of the substrate processing method according to the first embodiment of this disclosure.

[0018] Figure 6 This is a cross-sectional view showing the structure of the main part of the substrate processing apparatus of a first modified example of the first embodiment of the present disclosure.

[0019] Figure 7 This is a cross-sectional view showing the state in which the gas supply section is assembled in the inner tube of the substrate processing apparatus of the first modified example of the first embodiment of the present disclosure.

[0020] Figure 8 This is a cross-sectional view showing the state in which the gas supply section is assembled in the inner tube of the substrate processing apparatus of the second variation of the first embodiment of the present disclosure.

[0021] Figure 9 This is a cross-sectional view showing the structure of the main parts of the substrate processing apparatus according to the first embodiment of the present disclosure. Detailed Implementation

[0022] Reaction products generated by the gas supplied to the interior of the reaction tube are produced at the tip of the nozzle (gas supply pipe), and these products readily adhere directly to the tip. As the amount of reaction products adhering to the tip of the nozzle (gas supply pipe) gradually increases, it may cause blockage of the nozzle tip, or the reaction products may detach from the nozzle tip and adhere to the substrate being treated, resulting in foreign matter buildup on the surface of the substrate.

[0023] Furthermore, reaction products generated by the gas supplied to the interior of the reaction tube are produced at the tip of the nozzle (gas supply pipe), and these reaction products readily adhere directly to the tip. As the amount of reaction products adhering to the tip of the nozzle (gas supply pipe) gradually increases (grows), it may cause blockage of the nozzle tip, or the reaction products may detach from the nozzle tip, with some adhering to the substrate being treated, causing foreign matter to be generated on the surface of the substrate.

[0024] This disclosure addresses the aforementioned problems by providing a substrate processing apparatus, a method for manufacturing a semiconductor device using the substrate processing apparatus, and a storage medium storing a program that can be executed by a computer on the substrate processing apparatus. This substrate processing apparatus is capable of performing uniform film deposition on the surfaces of multiple substrates (wafers) arranged at predetermined intervals along the vertical direction inside a reaction tube. Specifically, this disclosure provides a unit for supplying inert gas around the outer periphery of a gas nozzle that supplies reactive or raw material gases, preventing reactive or raw material gases from entering the outer side of the gas nozzle from the reaction tube (inner tube) side, preventing reaction products from adhering to the outer periphery of the gas nozzle, and improving the homogeneity and quality of the film formed on the substrate surface.

[0025] Hereinafter, embodiments of the present disclosure will be described in detail based on the accompanying drawings. In all the drawings used to describe the embodiments, components with the same function are labeled with the same symbols, and repeated descriptions are omitted in principle.

[0026] However, this disclosure is not to be construed as limited to the description of the embodiments shown below. Those skilled in the art will readily understand that specific structures can be modified without departing from the spirit and essence of this disclosure.

[0027] Example 1

[0028] use Figures 1A to 3 The first embodiment of this disclosure is described below.

[0029] Figure 1AThis is a cross-sectional view showing the structure of the main parts of the substrate processing apparatus 100 according to the first embodiment. 120 is a reaction tube, 130 is an inner tube, and 140 is a substrate support (crystal boat) that holds multiple substrates (wafers) 101 and separates the multiple substrates from each other using multiple partition plates 142 supported by partition plate support portions 141. 143 is the uppermost top plate of the partition plate 142. The substrate support 140 moves the multiple substrates held in the inner tube 130 into and out of the inner tube via a lifting mechanism (crystal boat elevator) not shown.

[0030] 110 is a heater that, with the substrate support 140 assembled inside the inner tube 130 via an upper and lower mechanism (not shown), includes a reaction tube 120 and heats the interior of the inner tube 130. The heater 110 may also be divided into multiple blocks in the vertical direction, and for each block, the heating state is controlled based on data from a temperature measuring unit such as a thermometer (not shown).

[0031] 150 is a gas supply section that supplies gas to the interior of the inner tube 130, and is configured to supply gas to each substrate 101 in a manner that varies according to the vertical spacing (interval) between the substrates 101 held on the substrate support 140. Figure 1A Multiple gas supply units are provided on the same plane of the cross-section shown. The gas supply unit 150 is mounted in a direction substantially parallel to the surface of the substrate 101 held in the substrate support 140 inside the inner tube 130.

[0032] Multiple gas inlet holes 131 are formed at the front end of the gas supply section 150 of the inner tube 130 to introduce the gas supplied from the gas supply section 150 into the interior of the inner tube 130.

[0033] On the other hand, a slit 132 is formed in the inner tube 130 opposite to the portion where a plurality of gas inlet holes 131 are formed, so that gas in the gas supplied to the inside of the inner tube 130 from the plurality of gas inlet holes 131 that does not participate in the reaction inside the inner tube 130 including the surface of the substrate 101 held on the substrate support 140 is discharged from the inside of the inner tube 130.

[0034] Gas discharged from the inside of the inner tube 130 through the slit 132 to the side of the reaction tube 120 is discharged to the outside of the reaction tube 120 through the exhaust pipe 121 and the exhaust unit (not shown).

[0035] 180 is a controller that controls the operation of various parts of the board processing apparatus 100. Furthermore, using... Figure 1B The controller is described in detail.

[0036] Figure 2 This is a cross-sectional view of the gas supply section 150.

[0037] The gas supply unit 150 includes: a main body 151, an inlet pipe 152 assembled inside the main body 151, O-rings 1591 and 1592 for sealing between the inlet pipe 152 and the main body 151, a bushing 156, a nut 157 for pressing the bushing 156 in to deform the O-rings 1591 and 1592, an O-ring 1593 for sealing between the nozzle receiving pipe (described later) and the inlet pipe 152, a bushing 1582, and a nut 158 ​​for pressing the bushing 1581 in to deform the O-ring 1593.

[0038] Threads are machined on the inner surfaces of nuts 157 and 158. On the other hand, threads are also machined on the portion of the main body 151 where nuts 157 and 158 are mounted. Nuts 157 and 158 are respectively fitted onto the threaded portions of the main body 151, thereby pressing bushings 156 and 1581 in, and deforming O-rings 1591 and 1592 and O-ring 1593.

[0039] The main body 151 includes a first gas supply pipe 153 for introducing gas supplied to the interior of the inner tube 130, and a second gas supply pipe 154 for supplying inert gas between the main body 151 and the inlet pipe 152. The first gas supply pipe 153 and the second gas supply pipe 154 are respectively connected to… Figure 3 The gas supply source 1500 shown is connected.

[0040] Figure 3 This describes the structure of the gas supply source 1500. The gas supply source 1500 includes: a raw material gas / reaction gas supply system 1530 that supplies raw material gas or reaction gas to a first gas supply pipe 153, and an inert gas supply system 1540 that supplies inert gas to a second gas supply pipe 154.

[0041] The raw material gas / reaction gas supply system 1530 includes: a gas supply pipe 1531 for supplying raw material gas, a mass flow controller (MFC) 1533 for controlling the flow rate of the raw material gas, a valve 1535 for opening / closing the flow of the raw material gas, a reaction gas supply pipe 1532 for supplying reaction gas, a mass flow controller (MFC) 1534 for controlling the flow rate of the reaction gas, a valve 1536 for opening / closing the flow of the reaction gas, and a gas supply pipe 1537 connected to the first gas supply pipe 153.

[0042] The inert gas supply system 1540 includes: a gas supply pipe 1541 for supplying inert gas, a mass flow controller (MFC) 1542 for controlling the flow rate of inert gas, a valve 1543 for opening / closing the flow of inert gas, and a gas supply pipe 1544 connected to the second gas supply pipe 154.

[0043] In this structure, in the raw material gas / reaction gas supply system 1530, with the flow of reaction gas stopped by the closed valve 1536, the raw material gas supplied by a gas source not shown is supplied through the gas supply pipe 1531, the flow rate is adjusted by the mass flow controller (MFC) 1533, and the valve 1535 is set to the open state to allow the raw material gas to flow, and the raw material gas is supplied from the gas supply pipe 1537 to the first gas supply pipe 153.

[0044] In addition, when the supply of raw material gas is stopped by closing valve 1535, the reaction gas supplied by a gas source not shown is passed through the reaction gas supply pipe 1532, the flow rate is adjusted by mass flow controller (MFC) 1534, and the valve 1536 is set to open to allow the reaction gas to flow through, and the reaction gas is supplied from the gas supply pipe 1537 to the first gas supply pipe 153.

[0045] That is, in the raw material gas / reaction gas supply system 1530, a common gas supply pipe 1537 is used, and by alternately switching the opening and closing of valves 1535 and 1536, the type of gas supplied from the gas supply pipe 1537 to the first gas supply pipe 153 can be switched between raw material gas and reaction gas.

[0046] On the other hand, in the inert gas supply system 1540, inert gas supplied from a gas source not shown is passed through the gas supply pipe 1541, the flow rate is adjusted by the mass flow controller (MFC) 1542, and the valve 1543 is set to the open state to allow the inert gas to flow through, and the inert gas is supplied from the gas supply pipe 1544 to the second gas supply pipe 154 to the inert system.

[0047] like Figure 2 As shown, a gas inlet 155 is formed inside the main body 151 for supplying gas from the first gas supply pipe 153 into the inner pipe 130. Furthermore, the portion of the inlet pipe 152 that is further forward than the portion from which inert gas is introduced from the second gas supply pipe 154, i.e., the nozzle 1521, is formed in a tubular shape, and a gap is formed between the portion from which inert gas is introduced from the second gas supply pipe 154 and the interior of the main body 151.

[0048] Figure 4 This is a cross-sectional view showing the gas supply unit 150 assembled through the heater 110 and the reaction tube 120 and opposite to the gas inlet hole 131 formed in the inner tube. Figure 4 An example is shown of the uppermost gas inlet section among the multiple gas supply sections 150.

[0049] The diagram shows the nozzle receiving tube 160, which serves as the nozzle receiving portion, inserted into the body portion 151 and secured by a nut 158. In this state, a gap exists between the hole 161 formed inside the nozzle receiving tube 160 and the nozzle 1521 of the inlet tube portion 152, ensuring a passage for inert gas supplied from the second gas supply tube 154. In other words, the nozzle 1521 is configured to be inserted into the nozzle receiving tube 160, which serves as the nozzle receiving portion. Alternatively, it can be stated that each nozzle 1521 is individually received within the nozzle receiving portion.

[0050] In this way, the gas (raw material gas or reaction gas) supplied from the first gas supply pipe 153 and the inert gas supplied from the second gas supply pipe 154 are supplied to the interior of the reaction tube 120 in a coaxial direction parallel to the surface of the substrate 101.

[0051] The front end portion on the opposite side of the nozzle receiving tube 160 passes through the heater 110 and reaches the inside of the reaction tube 120. On the other hand, the front end portion 1522 of the nozzle 1521 of the inlet tube 152 extends further into the interior of the reaction tube 120 than the front end portion on the opposite side of the nozzle receiving tube 160, reaching the front of the gas inlet hole 131 formed in the inner tube 130.

[0052] In this state, if the nozzle 1521 and the interior of the inner tube 130 are heated by the heater 110 while gas (raw material gas or reaction gas) is supplied from the first gas supply pipe 153, the supplied gas is released from the front end portion 1522 of the nozzle 1521 in the inlet pipe 152 through the gas inlet hole 155 formed in the inlet pipe portion 152 and into the interior of the reaction tube 120. Most of the gas released into the interior of the reaction tube 120 is supplied into the interior of the inner tube 130 through the gas inlet hole 131 formed in the inner tube 130. Inside the inner tube 130, a reaction occurs on the surface of the substrate 101 held by the substrate support member 140 to form a thin film.

[0053] At this time, a portion of the gas released from the front end portion 1522 of the nozzle 1521 of the inlet tube 152 into the interior of the reaction tube 120 is not supplied to the interior of the inner tube 130 through the gas inlet hole 131, but remains inside the reaction tube 120.

[0054] If the gas remaining inside the reaction tube 120 that is not supplied to the inner tube 130 is kept in this state, reaction products generated by the residual gas will form around the front end portion 1522 of the nozzle 1521 of the inlet tube 152. If these reaction products accumulate at the front end portion 1522, there is a concern that some of them may peel off, disperse into the inner tube 130, and adhere to the surface of the substrate 101, resulting in a decrease in the film quality of the thin film formed on the surface of the substrate 101.

[0055] In contrast, in this embodiment, inert gas is supplied from the second gas supply pipe 154 through the gap between the hole 161 of the nozzle receiving pipe 160 and the nozzle 1521 of the inlet pipe 152 to the interior of the reaction pipe 120.

[0056] In this structure, by supplying gas (raw material gas or reaction gas) into the interior of the inner tube 130 from the first gas supply pipe 153 and inert gas into the interior of the reaction tube 120 from the second gas supply pipe 154, inert gas (e.g., N2: nitrogen) is supplied to the front end portion 1522 of the nozzle 1521 of the inlet pipe 152, thereby suppressing the formation of reaction products near the front end portion 1522 due to the gas supplied from the first gas supply pipe 153.

[0057] Here, the flow rates of the gas (raw material gas or reaction gas) supplied from the first gas supply pipe 153 to the interior of the inner pipe 130 and the flow rates of the inert gas supplied from the second gas supply pipe 154 are adjusted by a mass flow controller (not shown), which is controlled by a controller 180.

[0058] In this embodiment, the flow rate of the inert gas supplied from the second gas supply pipe 154 is set to be less than the flow rate of the gas (raw material gas or reactant gas) supplied from the first gas supply pipe 153. More preferably, the flow rate of the inert gas is set to be less than 1 / 10 of the flow rate of the gas (raw material gas or reactant gas).

[0059] As a result, the formation of reaction products is suppressed, preventing the reaction products inside the inner tube 130 from adhering to the surface of the substrate 101, and maintaining the film quality of the thin film formed on the surface of the substrate 101 at a high level.

[0060] A portion of the inert gas supplied from the second gas supply pipe 154 can also be introduced into the interior of the inner pipe 130 through the gas inlet hole 131 formed in the inner pipe 130.

[0061] Furthermore, in the embodiments described above, an example of supplying raw material gas or reaction gas from the first gas supply pipe 153 to the interior of the inner pipe 130 has been described. However, as the first gas supply pipe 153, a first gas supply pipe dedicated to supplying raw material gas and a first gas supply pipe dedicated to supplying reaction gas may also be provided respectively.

[0062] In addition, in the embodiments described above, the structure in which the front end portion 1522 of the nozzle 1521 of the inlet tube 152 extends to the front of the gas inlet hole 131 formed in the inner tube 130 has been described. However, it is also possible to configure the front end portion 1522 of the nozzle 1521 of the inlet tube 152 to be inserted into the interior of the gas inlet hole 131 formed in the inner tube 130.

[0063] Furthermore, while the above-described embodiment features a structure in which the inner tube 130 is disposed inside the reaction tube 120, it is also possible to configure the substrate 101 to enter and exit the reaction tube 120 without using the inner tube 130, and instead utilize the substrate support 140. In this case, the tip portion 1522 of the nozzle 1521 of the inlet tube 152 is positioned near the substrate 101 held in the substrate support 140.

[0064] [Controller]

[0065] like Figure 1A As shown, the substrate processing device 100 is connected to the controller 180 that controls the operation of each part.

[0066] Figure 1B This represents a general outline of controller 180. Controller 180, as a control unit (control unit), is configured as a computer including a CPU (Central Processing Unit) 180a, RAM (Random Access Memory) 180b, a storage device 180c, and input / output ports (I / O ports) 180d. RAM 180b, storage device 180c, and I / O ports 180d are configured to exchange data with CPU 180a via an internal bus 180e. The controller 180 is configured to connect to input / output devices 181, such as a touch panel, and external storage devices 182.

[0067] The storage device 180c is composed of a storage medium such as flash memory or HDD (Hard Disk Drive). The storage device 180c contains readable storage of programs that control the operation of the substrate processing apparatus, process formulas that record the steps and conditions of substrate processing (described later), and databases.

[0068] Furthermore, the process formulation combines the steps in the substrate processing steps described later in a manner that enables the controller 180 to execute and obtain a predetermined result, thus functioning as a program.

[0069] Hereinafter, the process formulation, control program, etc., will be collectively referred to as "program". Furthermore, the term "program" may be used in this specification in cases where only the process formulation is included, in cases where only the control program is included, or in cases where both are included. Additionally, RAM180b is configured as a storage area (working area) for temporarily holding programs, data, etc., read by CPU180a.

[0070] I / O port 180d is connected to heater 110, substrate loading port (not shown), crystal boat loading / unloading mechanism, rotary drive motor, mass flow controller, vacuum pump, etc.

[0071] Furthermore, the term "connection" in this disclosure includes both the physical connection of the components via cables and the ability to directly or indirectly receive / transmit signals (electronic data) from the components. For example, devices for relaying signals, converting signals, or performing calculations may be provided between the components.

[0072] CPU 180a is configured to read and execute a control program from storage device 180c, and to read a process recipe from storage device 180c based on inputs such as operation instructions from controller 180. Then, CPU 180a controls the power supply to heater 110, the opening and closing of substrate loading port (not shown), the driving of the up-and-down drive motor, the driving of the crystal boat loading and unloading mechanism, and the rotation of the rotation drive motor, etc., according to the content of the read process recipe.

[0073] Furthermore, the controller 180 is not limited to being configured as a dedicated computer, but can also be configured as a general-purpose computer. For example, an external storage device (e.g., magnetic tape, floppy disk, hard disk, etc., optical disc, CD, DVD, etc., optical disk, USB memory, memory card, etc.) 182 storing the above-described program can be prepared, and the program can be installed on a general-purpose computer using the external storage device 182, thereby configuring the controller 180 of this embodiment.

[0074] Furthermore, the unit for supplying programs to the computer is not limited to the case where it is supplied via external storage device 182. For example, a communication unit such as network 183 (Internet or dedicated line) may be used to supply programs without via external storage device 182. Furthermore, storage device 180c and external storage device 182 constitute a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage medium. In addition, in this specification, the term storage medium is used in cases including only storage device 180c, only external storage device 182, or both.

[0075] [Substrate processing (film deposition process)]

[0076] Next, use Figure 5 , for use through Figure 1A , Figures 1B to 4 The substrate processing process (film formation process) in which the substrate processing apparatus forms a film on a substrate will be described.

[0077] This disclosure can be applied to either film formation or etching processes, but as a manufacturing process of a semiconductor device (equipment), the process of forming a SiO2 (silicon oxide) layer will be described as an example of a process of forming a thin film on a substrate 101. The process of forming a film such as the SiO2 layer is performed inside the reaction tube 120 of the substrate processing apparatus 100 described above. The manufacturing process is performed by executing a program stored in a controller (not shown).

[0078] In the substrate processing step (semiconductor device manufacturing step) of this embodiment, firstly, the substrate support (crystal boat) 140 is raised using a vertical drive unit (not shown), as follows: Figure 1A The substrate support 140 is inserted into the inner tube 130 disposed inside the reaction tube 120. In this state, the substrate 101 placed on the substrate support 140 is at a predetermined height (space) opposite to the partition plate 142.

[0079] In this state, the following processes are performed:

[0080] (a) For the substrate 101 housed inside the inner tube 130, Si2Cl6 (silicon hexachloride) gas is introduced from the first gas supply pipe 153 into the gas introduction hole 155 of the gas supply section 150, and supplied to the inside of the inner tube 130 from the front end portion 1522 of the nozzle 1521.

[0081] (b) Stop the introduction of gas from the first gas supply pipe 153, and discharge the residual gas inside the reaction pipe 120 to the outside through the exhaust pipe 121 to remove the residual gas;

[0082] (c) For the substrate 101 housed inside the inner tube 130, O2 (oxygen) (or O3 (ozone) or H2O (water)) is introduced from the first gas supply pipe 153 into the gas inlet hole 155 of the gas supply section 150, and supplied to the interior of the inner tube 130 from the front end portion 1522 of the nozzle 1521; and

[0083] (d) Stop the introduction of gas from the first gas supply pipe 153, and discharge the residual gas inside the reaction pipe 120 to the outside through the exhaust pipe 121 to remove the residual gas.

[0084] The above processes (a) to (d) are repeated multiple times to form a SiO2 layer on the substrate 10.

[0085] In addition, in the processes described above (a) and (c), while gas is supplied from the first gas supply pipe 153 into the gas inlet hole 155 of the gas supply section 150, inert gas is supplied from the second gas supply pipe 154 into the gap between the hole 161 of the nozzle receiving pipe 160 and the nozzle 1521 of the inlet pipe section 152 of the gas supply section 150. Through this gap, inert gas is supplied into the vicinity of the front end portion 1522 of the nozzle 1521 from inside the reaction pipe 120.

[0086] Therefore, the formation of reaction products near the front end portion 1522 of the nozzle 1521 can be suppressed, the adhesion of reaction products inside the inner tube 130 to the surface of the substrate 101 can be prevented, and the film quality of the thin film formed on the surface of the substrate 101 can be maintained at a high level.

[0087] Furthermore, in this specification, the term "substrate" is used to refer to "the substrate itself" or to "a laminate (assembly) of a substrate and a predetermined layer or film formed on its surface" (i.e., the predetermined layer or film formed on the surface is referred to as the substrate). Additionally, in this specification, the term "surface of the substrate" is used to refer to "the surface (exposed surface) of the substrate itself" or to "the surface of the predetermined layer or film formed on the substrate, i.e., the outermost surface of the substrate as a laminate."

[0088] Furthermore, the use of the term "substrate" in this specification is synonymous with the use of the term "wafer".

[0089] Next, according to Figure 5 The flowchart shown illustrates a specific film-forming process.

[0090] (Process condition settings): S501

[0091] First, the CPU 180a of the controller 180 reads the process recipe and related database stored in the storage device 180c and sets the process conditions.

[0092] (Substrate loading): S502

[0093] With each new substrate 101 mounted and held on the substrate support 140, the substrate support 140 is raised using a drive unit (not shown) and moved into the interior of the inner tube 130 located inside the reaction tube 120.

[0094] (Pressure adjustment): S503

[0095] With the substrate support 140 moved into the inner tube 130, the interior of the reaction tube 120 is evacuated from the exhaust pipe 121 by a vacuum pump (not shown) to adjust the pressure inside the reaction tube 120 to the desired level.

[0096] (Temperature adjustment): S504

[0097] With the vacuum pump (not shown) used for venting, the interior of the reaction tube 120 is heated by the heater 110 based on the recipe read in step S501 to achieve the desired pressure (vacuum level) inside the reaction tube 120. At this time, the electrical current supplied to the heater 110 is controlled by feedback based on temperature information detected by a temperature sensor (not shown) to achieve the desired temperature distribution inside the reaction tube 120. Heating of the interior of the reaction tube 120 by the heater 110 continues at least until the processing of the substrate 101 is completed.

[0098] [SiO2 layer formation process]: S505

[0099] Next, in order to form, for example, a SiO2 layer as the first layer, the following detailed steps are performed.

[0100] (Raw gas supply): S5051

[0101] First, the partition plate 142 and the substrate 101 supported on the substrate support 140 are rotated by a rotation drive (not shown).

[0102] While maintaining the rotation of the separator 142 and the substrate 101, Si2Cl6 gas, as a raw material gas, is circulated from the first gas supply pipe 153 of the gas supply section 150 through the nozzle 1521 into the interior of the reaction tube 120 under a flow rate adjustment. The raw material gas supplied to the reaction tube 120 is supplied into the interior of the inner tube 130 through the gas inlet hole 131 formed in the inner tube 130, and a portion is not supplied into the interior of the inner tube 130, but remains in the space between the inner tube 130 and the reaction tube 120. Gas from the raw material gas supplied from the nozzle 1521 that does not participate in the reaction on the surface of the substrate 101 flows out from the slit 132 formed in the inner tube 130 towards the reaction tube 120 side and is discharged from the exhaust pipe 121.

[0103] Si2Cl6 gas is supplied to the substrate 101 held in the substrate support 140 by introducing Si2Cl6 gas into the interior of the inner tube 130 through the nozzle 1521. As an example, the flow rate of the supplied Si2Cl6 gas is set in the range of 0.002 to 1 slm (Standard liters per minute), more preferably in the range of 0.1 to 1 slm.

[0104] At this time, along with the Si2Cl6 gas, an inert gas such as N2 (nitrogen) or Ar (argon) is introduced into the gas supply section 150 from the second gas supply pipe 154 and supplied to the interior of the reaction tube 120, and discharged from the exhaust pipe 121. The specific flow rate of the carrier gas is set in the range of 0.01 to 5 slm, more preferably in the range of 0.5 to 5 slm.

[0105] N2 gas, acting as a carrier gas, is supplied to the interior through the gap between the nozzle 1521 and the hole 161 formed in the nozzle receiving tube 160, with a portion entering the interior of the inner tube 130 through the gas inlet hole 131 formed in the inner tube 130. On the other hand, most of the N2 gas supplied to the interior of the reaction tube 120 is discharged through the exhaust pipe 121 between the reaction tube 120 and the inner tube 130. At this time, the temperature of the heater 110 is set to a temperature that makes the temperature of the substrate 101 within the range of, for example, 250 to 550°C.

[0106] The gas flowing inside the inner tube 130 is only Si2Cl6 gas and N2 gas. By supplying Si2Cl6 gas to the inner tube 130, a Si-containing layer with a thickness ranging from less than one atomic layer to several atomic layers is formed on the substrate 101 (the base film on the surface).

[0107] (Raw material gas exhaust): S5052

[0108] Si2Cl6 gas, used as a raw material, is supplied to the interior of the inner tube 130 via nozzle 1521 for a predetermined time to form a Si-containing layer on the surface of the substrate 101, which is heated to a predetermined temperature range. Then, the supply of Si2Cl6 gas is stopped. At this time, the interior of the reaction tube 120 is evacuated by a vacuum pump (not shown) to remove unreacted Si2Cl6 gas or Si2Cl6 gas that has participated in the formation of the Si-containing layer from the interior of the reaction tube 120 containing the inner tube 130 and the interior of the reaction tube 120.

[0109] At this time, the supply of N2 gas as a carrier gas is maintained from the gap between the nozzle 1521 and the hole 161 formed in the nozzle receiving tube 160 to the interior of the reaction tube 130. The N2 gas acts as a purifying gas, which can improve the effect of removing unreacted gas or Si2Cl6 gas that has participated in the formation of the Si-containing layer from the interior of the reaction tube 120 and the interior of the inner tube 130 and the reaction tube 120.

[0110] (Reaction gas supply): S5053

[0111] After removing residual gas from the inner tube 130 and the reaction tube 120, O2 gas, which serves as the reaction gas, is introduced into the gas supply section 150 from the first gas supply pipe 153 and supplied from the nozzle 1521 through the reaction tube 120 to the interior of the inner tube 130. Unreacted O2 gas is discharged from the inner tube 130 and the reaction tube 120 through the exhaust pipe 121. This supplies O2 to the substrate 101. Specifically, the flow rate of the supplied O2 gas is set in the range of 0.2 to 10 slm, more preferably in the range of 1 to 5 slm.

[0112] At this time, the supply of N2 gas from the second gas supply pipe 154 to the gas supply section 150 is stopped, thus ceasing the supply of N2 gas to the inner tube 130 and the reaction tube 120. N2 gas is not supplied to the interior of the reaction tube 120 along with O2 gas. That is, O2 gas is supplied to the interior of the reaction tube 120 and the inner tube 130 without being diluted by N2 gas, thereby increasing the film formation rate of the SiO2 layer. The temperature of the heater 110 is set to the same temperature as in the Si2Cl6 gas supply step.

[0113] At this time, the gas flowing inside the reaction tube 120 and the inner tube 130 is only O2 gas. The O2 gas undergoes a displacement reaction with at least a portion of the Si-containing layer formed on the substrate 101 in the raw material gas (Si2Cl6) supply step (S4051). During the displacement reaction, the Si contained in the Si-containing layer and the O contained in the O2 gas combine to form a SiO2 layer containing Si and O on the substrate 101.

[0114] (Residual gas exhaust): S5054

[0115] After the SiO2 layer is formed, the supply of O2 gas from nozzle 1521 to the interior of reaction tube 120 and inner tube 130 is stopped. Then, through the same processing sequence as in step S4052, the unreacted O2 gas or reaction byproducts remaining in the interior of reaction tube 120 and inner tube 130 are removed from the interior of reaction tube 120 and inner tube 130.

[0116] (Number of scheduled implementations)

[0117] By sequentially performing the detailed steps S5051 to S5055 described above at least once (a predetermined number of times (n times)), a SiO2 layer of a predetermined thickness (e.g., 0.1 to 2 nm) is formed on the substrate 10. The above-described cycle is preferably repeated multiple times, for example, preferably about 10 to 80 times, more preferably about 10 to 15 times, thereby forming a thin film with a uniform thickness distribution on the surface of the substrate 10.

[0118] (Post-purification): S506

[0119] After repeating the series of steps S505 a predetermined number of times, N2 gas is supplied from nozzle 1521 into the interior of reaction tube 120 and inner tube 130, and discharged from exhaust pipe 121. N2 gas acts as a purifying gas, thereby purifying the interior of reaction tube 120 and inner tube 130 with inert gas, and removing residual gases and byproducts from the interior of reaction tube 120 and inner tube 130.

[0120] (Board unloading): S507

[0121] Then, the substrate support 140 is lowered from the inner tube 130 of the reaction tube 120 by a lifting mechanism (not shown), and the substrate 101 with a thin film of a predetermined thickness formed on its surface is removed from the substrate support 140, thus ending the processing of the substrate 101.

[0122] In the examples described above, the formation of a SiO2 film on substrate 101 was illustrated, but this embodiment is not limited to this. For example, a Si3N4 (silicon nitride) film or a TiN (titanium nitride) film can be formed instead of a SiO2 film. Furthermore, it is not limited to these films. For example, films composed of elemental monomers such as W, Ta, Ru, Mo, Zr, Hf, Al, Si, Ge, Ga, or elements in the same group as these elements, compound films of these elements with nitrogen (nitride films), and compound films of these elements with oxygen (oxide films) can also be applied. Moreover, when forming these films, the aforementioned halogen-containing gas, or a gas containing at least one of a halogen element, amino group, cyclopentyl group, oxygen (O), carbon (C), alkyl group, etc., can be used.

[0123] According to this embodiment, during the film formation process on the substrate, the formation of reaction products can be suppressed, and the adhesion of reaction products inside the inner tube to the surface of the substrate can be prevented, thereby stably maintaining the formation of a high-quality thin film on the surface of the substrate.

[0124] [Variation Example 1]

[0125] In Example 1, a structure was described in which gas (raw material gas or reactant gas) and inert gas are supplied coaxially from a surface parallel to the surface of the substrate 101 held inside the inner tube 130 by the substrate support 140. In contrast, in this modified example, as... Figure 6 The configuration shown is such that the gas (raw material gas or reaction gas) is supplied from a direction parallel to the surface of the substrate 101, just as in Example 1, and the inert gas is supplied from a gas supply pipe 510 arranged longitudinally inside the reaction tube 120.

[0126] Figure 7This shows a cross-section of the portion of the substrate processing apparatus in this modified example where the gas supply unit is mounted in the inner tube. The structure of the gas supply unit 150 for supplying gas (raw material gas or reaction gas) is the same as that described in Example 1, but in this modified example, the second gas supply pipe 154 is used to discharge the inert gas supplied from the gas supply pipe 510 to the inside of the reaction pipe 120 to the outside.

[0127] That is, in this modified example, gas (raw material gas or reaction gas) is supplied from the front end portion 1522 of the nozzle 1521 of the gas supply section 150, while inert gas is supplied to the interior of the reaction tube 120 through the orifice 511. The orifice 511 corresponds to the gas supply section 150 and is provided in a plurality of gas supply pipes 510 arranged longitudinally inside the reaction tube 120.

[0128] As a result, an inert gas is supplied from inside the gas supply pipe 410 to the vicinity of the front end portion 1522 of the nozzle 1521 of the inlet pipe 152, and reaction products caused by the gas supplied from the first gas supply pipe 153 are formed near the front end portion 1522.

[0129] As a result, the formation of reaction products can be suppressed, the adhesion of reaction products inside the inner tube 130 to the surface of the substrate 101 can be prevented, and the film quality of the thin film formed on the surface of the substrate 101 can be maintained at a high level.

[0130] Furthermore, in this modified example, the case where the gas supply pipe 510 is formed into a straight shape has been described, but the front end of the gas supply pipe 510 can also be configured as a U-shaped bend that is bent back in a U-shape.

[0131] Alternatively, in this modified example, the second gas supply pipe 154 may not be provided.

[0132] [Variation Example 2]

[0133] In Modification 1, the structure is such that inert gas is supplied to the interior of the reaction tube 120 through a hole 511, wherein the hole 511 is formed in a gas supply pipe 510 arranged longitudinally inside the reaction tube 120. In this modification, as... Figure 8 The configuration shown is such that, instead of the orifice 511, an inert gas is supplied to the interior of the reaction tube 120 from a protrusion 711 with an internally formed hole.

[0134] According to this modified example, by supplying inert gas to the vicinity of the front end portion 1522 of the nozzle 1521 of the inlet pipe 152 through the gas supply pipe 710, the formation of reaction products caused by the gas supplied from the first gas supply pipe 153 near the front end portion 1522 can be suppressed.

[0135] As a result, the formation of reaction products can be suppressed, the adhesion of reaction products inside the inner tube 130 to the surface of the substrate 101 can be prevented, and the film quality of the thin film formed on the surface of the substrate 101 can be maintained at a high level.

[0136] Furthermore, in this modified example, the case in which the gas supply pipe 510 is configured as a straight line and has a comb-shaped form with multiple protrusions 711 is described. However, it is also possible to provide multiple gas supply pipes 510 in a straight line shape and configure them to form a Γ (gamma) shape with protrusions 711 at a position corresponding to the front end portion 1522 of the nozzle 1521.

[0137] Alternatively, in this modified example, the second gas supply pipe 154 may not be provided.

[0138] Example 2

[0139] use Figure 9 The second embodiment of this disclosure will be described.

[0140] Figure 9 This is a cross-sectional view showing the structure of the main parts of the substrate processing apparatus 800 according to the second embodiment of this disclosure. (Regarding...) Figure 1A The same structural components described in the first embodiment are labeled with the same numbers.

[0141] With Figure 1A The difference in the first embodiment described is that instead of making the nozzle receiving part into a tube shape, it has a nozzle receiving part 810 that can accommodate multiple gas supply parts 850.

[0142] 120 is a reaction tube, 130 is an inner tube, and 140 is a substrate support (crystal boat) that holds multiple substrates (wafers) 101. Multiple partition plates 142, supported by partition plate support portions 141, separate the multiple substrates. 143 is the uppermost top plate of the partition plate 142. The substrate support 140 moves the multiple substrates held within it into and out of the inner tube 130 via a lifting mechanism (crystal boat elevator) not shown.

[0143] 110 is a heater that heats the interior of the inner tube 130, including the reaction tube 120, while the substrate support 140 is assembled inside the inner tube 130 using an up-and-down mechanism (not shown). The heater 110 may also be divided into multiple blocks in the up-and-down direction, and the heating state may be controlled for each block.

[0144] 850 is a gas supply section that supplies gas to the interior of the inner tube 130, for use in... Figure 9The cross-section shown has multiple structures on the same plane, which can supply gas to each substrate 101 according to the vertical spacing (interval) of the substrate 101 held in the substrate support 140. The gas supply unit 850 is mounted in a direction substantially parallel to the surface of the substrate 101 held in the substrate support 140 inside the inner tube 130.

[0145] 810 is a nozzle receiving portion that simultaneously holds multiple gas supply sections 850, and while simultaneously holding multiple gas supply sections 850, it passes through the heater 110 and is connected to the reaction tube 120. The gas supply sections 850 held in the nozzle receiving portion 810 have the same characteristics as those used in Embodiment 1. Figures 2 to 4 The structure described herein is identical to that described herein, except that the front end of the nozzle of the gas supply section 850 (equivalent to the nozzle 1521 in Embodiment 1) is located directly in front of the gas inlet hole 131 formed in the inner tube 130.

[0146] On the other hand, a slit 132 is formed in the inner tube 130 opposite to the portion where a plurality of gas inlet holes 131 are formed, so that gas in the gas supplied to the inside of the inner tube 130 from the plurality of gas inlet holes 131 that does not participate in the reaction inside the inner tube 130 including the surface of the substrate 101 held on the substrate support 140 is discharged from the inside of the inner tube 130.

[0147] Gas discharged from the inside of the inner tube 130 through the slit 132 to the side of the reaction tube 120 is discharged to the outside of the reaction tube 120 through the exhaust pipe 121 using an exhaust unit (not shown).

[0148] According to this embodiment, multiple gas supply units 850 can be processed together using the nozzle receiving portion 810, thus making it easier to maintain the multiple gas supply units 850 in the substrate processing apparatus 800.

[0149] Furthermore, according to this embodiment, during the film formation process on the substrate, the formation of reaction products can be suppressed, and the adhesion of reaction products inside the inner tube to the surface of the substrate can be prevented, thereby stably maintaining the formation of a high-quality thin film on the surface of the substrate.

[0150] In addition, this disclosure also includes the following embodiments.

[0151] (1) A substrate processing apparatus comprising:

[0152] The reaction tube contains the substrate;

[0153] A nozzle receiving portion is disposed on the side of the reaction tube, extending horizontally along the substrate.

[0154] A gas supply nozzle is inserted into the interior of the nozzle receiving portion from the outside of the reaction tube.

[0155] A first gas supply unit supplies first gas into the aforementioned gas supply nozzle; and

[0156] The second gas supply unit supplies a second gas into the nozzle receiving section.

[0157] (2) The above reaction tube has an inner tube.

[0158] (3) The inner tube has an opening opposite to the opening of the gas supply nozzle.

[0159] (4) The front end of the gas supply nozzle is configured to be able to be inserted into the inner wall of the inner tube.

[0160] (5) Supply the second gas between the reaction tube and the inner tube.

[0161] (6) The second gas is supplied between the nozzle receiving portion and the gas supply nozzle.

[0162] (7) The second gas supply section is connected in a direction perpendicular to the surface of the substrate of the nozzle receiving section.

[0163] (8) The nozzle receiving part is configured as a tube, and the second gas supply part is connected to the wall of the tube.

[0164] (9) A fixing member is provided in the nozzle receiving part to fix the gas supply nozzle, and the second gas supply part is configured to supply the second gas through the fixing member.

[0165] (10) An exhaust pipe is provided in the nozzle receiving section to exhaust the atmosphere inside the nozzle receiving section.

[0166] (11) The reaction tube has an inner tube, and a third gas supply section for supplying a second gas is provided between the reaction tube and the inner tube.

[0167] (12) The third gas supply section is provided with an opening or a protrusion protruding into the nozzle receiving section at a position corresponding to the nozzle receiving section.

[0168] (13) The aforementioned third gas supply section is configured in any of the following shapes: straight, Γ (gamma) shaped, U-shaped, or comb-shaped.

[0169] (14) The first gas supply section is provided with a first flow adjustment section for adjusting the flow rate of the first gas, and the second gas supply section is provided with a second flow adjustment section for adjusting the flow rate of the second gas, and has a control section, which is configured to control the first flow adjustment section and the second flow adjustment section so that the flow rate of the second gas is smaller than the flow rate of the first gas.

[0170] (15) The control unit is configured to control the first flow adjustment unit and the second flow adjustment unit so that the flow rate of the second gas is less than 1 / 10 of the flow rate of the first gas.

[0171] (16) The control unit is configured to control the program of the control unit so that the flow rate of the second gas cannot be set to a flow rate that exceeds 1 / 10 of the flow rate of the first gas.

[0172] (17) The above-mentioned second gas supply section is provided in the above-mentioned nozzle receiving section.

[0173] (18) The above-mentioned nozzle receiving section is provided with a plurality of the above-mentioned first gas supply sections.

[0174] (19) The first gas mentioned above is a processing gas, and the second gas mentioned above is an inert gas.

[0175] (20) The above-mentioned processing gas includes either or both of the raw material gas and the reaction gas.

[0176] Furthermore, while the above description illustrates an example with multiple gas supply nozzles, it is not a limitation; a single gas supply nozzle is sufficient.

[0177] Furthermore, while the above description describes a structure in which multiple substrates are held in a substrate holder, it is not limited to this. Alternatively, a single substrate may be held in the substrate holder for processing, or the substrate holder may be configured to hold a single substrate.

[0178] Furthermore, in the above description, the film formation process is described as one of the manufacturing processes of a semiconductor device, but it is not limited to the film formation process and can also be applied to processes such as heat treatment and plasma treatment.

[0179] Furthermore, the above description describes a substrate processing apparatus capable of performing a semiconductor device manufacturing process, but it is not limited to this. It can also be a substrate processing apparatus for processing substrates such as ceramic substrates, liquid crystal device substrates, and light-emitting device substrates.

[0180] Symbol Explanation

[0181] 100, 500, 800—Substrate processing apparatus; 101—Substrate; 110—Heater; 120—Reaction tube; 130—Inner tube; 140—Substrate support; 150—Gas supply unit; 160—Nozzle receiving tube; 180—Controller; 510, 710—Gas supply tube.

Claims

1. A substrate processing apparatus, characterized in that, have: A reaction tube that houses multiple substrates held in a substrate holding portion; A nozzle receiving portion is disposed on the side of the reaction tube in a direction parallel to the surface of the substrate. Multiple gas supply nozzles are inserted into the interior of the nozzle receiving portion to supply gas to the multiple substrates from a direction parallel to the surface of the substrates according to the vertical spacing of the multiple substrates, and extend from the outside of the reaction tube to the interior of the reaction tube. A first gas supply unit supplies first gas to the aforementioned gas supply nozzle; and The second gas supply unit supplies an inert gas, which serves as the second gas, to the gap between the nozzle receiving part and the gas supply nozzle on the outside of the reaction tube. While supplying the first gas, the inert gas is also supplied into the reaction tube through the gap.

2. The substrate processing apparatus according to claim 1, characterized in that, The aforementioned reaction tube has an inner tube inside. On the wall of the inner tube, there is an opening at a position opposite to the front end of the gas supply nozzle that extends into the interior of the reaction tube.

3. The substrate processing apparatus according to claim 2, characterized in that, A slit-like opening is formed on the wall surface opposite to the wall surface where the aforementioned opening is formed in the inner tube.

4. The substrate processing apparatus according to claim 1, characterized in that, The aforementioned reaction tube has an inner tube inside. The front end of the gas supply nozzle, which extends into the interior of the reaction tube, is inserted into a hole formed in the wall of the inner tube.

5. The substrate processing apparatus according to claim 1, characterized in that, The aforementioned reaction tube has an inner tube inside. The second gas supply unit supplies the second gas between the reaction tube and the inner tube.

6. The substrate processing apparatus according to claim 1, characterized in that, It also includes a heater that covers the area surrounding the aforementioned reaction tube. The nozzle housing extends through the heater on the side of the reaction tube in a direction parallel to the surface of the substrate.

7. The substrate processing apparatus according to claim 1, characterized in that, The second gas supply section has a supply pipe inside the reaction tube, which extends in the vertical direction along the plurality of substrates housed in the reaction tube at predetermined intervals, and has holes formed at positions corresponding to the plurality of gas supply nozzles for releasing the second gas.

8. The substrate processing apparatus according to claim 7, characterized in that, The reaction tube has an inner tube inside, and the supply tube is disposed between the reaction tube and the inner tube.

9. The substrate processing apparatus according to claim 1, characterized in that, The above-mentioned gas supply nozzles are configured in multiple ways. The nozzle receiving section is configured to individually receive each of the plurality of gas supply nozzles.

10. The substrate processing apparatus according to claim 1, characterized in that, The above-mentioned gas supply nozzles are configured in multiple ways. The nozzle housing is configured to house a plurality of the aforementioned gas supply nozzles.

11. The substrate processing apparatus according to claim 1, characterized in that, A partition plate separating the aforementioned substrates is disposed between the aforementioned substrates.

12. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: Multiple substrates held in the substrate holding section are housed inside the reaction tube; The device includes a nozzle receiving portion extending parallel to the surface of the substrate along the side of the reaction tube; and multiple gas supply nozzles, which are inserted into the nozzle receiving portion at vertical intervals between the multiple substrates and extend from the outside of the reaction tube to the inside of the reaction tube, supply first gas to the multiple substrates; and The second gas supply section supplies an inert gas, which is a second gas, to the outside of the reaction tube through the gap between the nozzle receiving section and the gas supply nozzle. While supplying the first gas, the inert gas is also supplied to the inside of the reaction tube through the gap.

13. The method for manufacturing a semiconductor device according to claim 12, characterized in that, In the process of supplying the first gas, while supplying the raw material gas or reaction gas into the interior of the reaction tube from the gas supply nozzle, an inert gas is supplied to the vicinity of the front end of the gas supply nozzle.

14. The method for manufacturing a semiconductor device according to claim 13, characterized in that, In the process of supplying gas into the interior of the reaction tube, the inert gas is supplied from a direction coaxial with the gas supply nozzle that supplies the raw material gas or the reaction gas into the interior of the reaction tube to the vicinity of the front end of the gas supply nozzle.

15. The method for manufacturing a semiconductor device according to claim 13, characterized in that, In the process of supplying gas into the interior of the reaction tube, the flow rate of the inert gas supplied to the vicinity of the front end of the gas supply nozzle is less than 1 / 10 of the flow rate of the raw material gas or reaction gas supplied into the interior of the reaction tube from the plurality of gas supply nozzles.

16. A computer-readable storage medium, characterized in that, The program stores a procedure that causes the substrate processing apparatus to perform the following steps via a computer: Multiple substrates held in the substrate holding section are housed inside the reaction tube; The device includes a nozzle receiving portion extending parallel to the surface of the substrate along the side of the reaction tube; and multiple gas supply nozzles, which are inserted into the nozzle receiving portion at vertical intervals between the multiple substrates and extend from the outside of the reaction tube to the inside of the reaction tube, supply first gas to the multiple substrates; and The second gas supply section supplies an inert gas, which is a second gas, to the outside of the reaction tube through the gap between the nozzle receiving section and the gas supply nozzle. While supplying the first gas, the inert gas is also supplied to the inside of the reaction tube through the gap.

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