Substrate processing apparatus, method of manufacturing semiconductor device, program product, and substrate processing method

Abstract

The present invention provides a structure for improving in-plane film thickness uniformity of a film formed on a substrate. The present invention is provided with: a process gas nozzle that supplies a process gas to a process chamber that processes a substrate; an inert gas nozzle that is arranged at a predetermined distance apart from the process gas nozzle in a circumferential direction of the substrate and supplies an inert gas to the process chamber; and a reaction tube that constitutes the process chamber inside and has a first protruding portion that protrudes to the outside in a manner of housing the process gas nozzle and a second protruding portion that protrudes to the outside in a manner of housing the inert gas nozzle, the present invention being configured to supply the inert gas supplied from the inert gas nozzle toward the process gas nozzle in a manner of making a flow direction of the process gas toward the substrate side.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices, a process is performed in which a processing gas is supplied to a substrate (wafer) in a processing chamber to form a film on the substrate. With the increasing precision and depth of semiconductor devices, when the wafer in the processing chamber is a patterned wafer, insufficient supply of processing gas near the center of the wafer sometimes leads to deterioration in the in-plane film thickness uniformity of the film formed on the wafer. To address this, processing gas is sometimes supplied to the center of the wafer to improve the in-plane film thickness uniformity (see, for example, Patent Documents 1 and 2).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2018 / 154823

[0006] Patent Document 2: International Publication No. 2016 / 157401 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The purpose of this disclosure is to provide a structure that improves the in-plane film thickness uniformity of a film formed on a substrate.

[0009] Methods for solving problems

[0010] According to one aspect of this disclosure, the following technology is provided, possessing:

[0011] Processing gas nozzles supply processing gas to the processing chamber of the processing substrate;

[0012] An inert gas nozzle, configured to be spaced a predetermined distance from the processing gas nozzle in the circumferential direction of the substrate, supplies inert gas to the processing chamber; and

[0013] The reaction tube, which internally forms the processing chamber, has a first protrusion projecting outward to accommodate the processing gas nozzle and a second protrusion projecting outward to accommodate the inert gas nozzle.

[0014] The inert gas supplied from the inert gas nozzle is supplied to the processing gas nozzle in such a way that the flow direction of the processing gas is toward the substrate side.

[0015] Invention Effects

[0016] According to this disclosure, a structure can be provided to improve the in-plane film thickness uniformity of a film formed on a substrate. Attached Figure Description

[0017] Figure 1 This is a schematic structural diagram of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a longitudinal sectional view showing the processing furnace portion.

[0018] Figure 2 Therefore Figure 1 The AA-line cross-sectional view is a diagram of a portion of the processing furnace of a substrate processing apparatus preferably used in one embodiment of this disclosure.

[0019] Figure 3 This is a schematic structural diagram of the controller of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram of the control system of the controller shown in block diagram.

[0020] Figure 4 This is a diagram showing the film formation sequence of a substrate processing apparatus preferably used in one embodiment of this disclosure.

[0021] Figure 5 (A) in the figure is a graph showing the concentration distribution of raw material free radicals in the processing furnace of a substrate processing apparatus preferably used in an embodiment of this disclosure. Figure 5 (B) in the text is used for explanation. Figure 5 The diagram in (A) shows the flow of gas near the convection nozzle.

[0022] Figure 6 This is a graph showing the analytical results of the in-plane film thickness distribution of the film formed on the substrate using the substrate processing apparatus of one embodiment of the present disclosure (this embodiment), the substrate processing apparatus of Comparative Example 1, and the substrate processing apparatus of Comparative Example 2, respectively.

[0023] Figure 7 (A) is a graph showing the relationship between the flow rate of inert gas in the convection nozzle and the in-plane film thickness distribution when a film is formed on a substrate using the substrate processing apparatus of Comparative Example 2. Figure 7 (B) is a graph showing the relationship between the flow rate of inert gas in the convection nozzle and the in-plane film thickness distribution when a film is formed on a substrate using a substrate processing apparatus according to an embodiment of the present disclosure. Detailed Implementation

[0024] The following uses Figures 1-4 One embodiment of this disclosure will be described. However, in the following description, the same structural elements are sometimes labeled with the same reference numerals and repeated descriptions are omitted.

[0025] (1) Structure of the substrate processing device

[0026] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating unit (heating mechanism). The heater 207 is cylindrical and is vertically mounted by means of being supported by a retaining plate. The heater 207 also functions as an activation mechanism (activation unit) for thermally activating (exciting) the gas.

[0027] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape that is closed at the top and open at the bottom. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as a nickel alloy and is formed into a short cylindrical shape that is open at both the top and bottom. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing component. The reaction tube 203 is also vertically mounted like the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed inside the processing container. The processing chamber 201 is configured to accommodate a wafer 200, which serves as a substrate.

[0028] In the processing chamber 201, nozzles 249a (serving as a first gas nozzle for supplying film-forming gas, processing gas), 249b (serving as a second gas nozzle for supplying film-forming gas, processing gas), 249c (serving as a third gas nozzle for supplying inert gas), and 249d (serving as a fourth gas nozzle for supplying inert gas) are respectively provided through the side wall of the manifold 209. Gas supply pipes 232a to 232d are respectively connected to nozzles 249a to 249d.

[0029] Nozzles 249a and 249b are used as process gas nozzles to supply film-forming gas (process gas) to the processing chamber 201. Nozzles 249c and 249b are used as inert gas nozzles to supply inert gas to the processing chamber 201. Nozzles 249c and 249d are each used as convection nozzles to supply only inert gas from a system different from the film-forming gas. Two convection nozzles are arranged in the processing chamber 201. The convection nozzles are each configured to be spaced a predetermined distance from the process gas nozzles in the circumferential direction of the wafer 200.

[0030] On gas supply pipes 232a to 232d, mass flow controllers (MFCs) 241a to 241d serving as flow controllers (flow control units) and valves 243a to 243d serving as on / off valves are sequentially installed from the upstream side of the airflow. Gas supply pipes 232e and 232f, for supplying inert gas, are connected downstream of valves 243a and 243b on gas supply pipes 232a and 232b, respectively. On gas supply pipes 232e and 232f, MFCs 241e and 241f and valves 243e and 243f are sequentially installed from the upstream side of the airflow.

[0031] The reaction tube 203 includes: a first protrusion 302 that protrudes outward to accommodate nozzles 249a and 249b; a second protrusion 303 that protrudes outward to accommodate nozzle 249c; and a third protrusion 304 that protrudes outward to accommodate nozzle 249d. The first protrusion 302 may also be divided into multiple parts to accommodate nozzles 249a and 249b respectively.

[0032] The first protrusion 302 is formed opposite to the exhaust port 233. The second protrusion 303 and the third protrusion 304 are each formed at a predetermined distance from the first protrusion 302 in the circumferential direction of the reaction tube 203. Here, the predetermined distance refers to the distance of an arc within a range of 15° to 120° from the first protrusion 302 in the circumferential direction of the reaction tube 203. In other words, it is the distance of an arc within a range of 15° to 120° formed by the straight line connecting the center of the first protrusion 302 of the reaction tube 203 to the center of the wafer 200 and the straight line connecting the centers of the second protrusion 303 and the third protrusion 304 to the center of the wafer 200. The second protrusion 303 and the third protrusion 304 are arranged symmetrically with respect to the straight line connecting the center of the first protrusion 302 to the center of the exhaust port 233.

[0033] exist Figure 2 In the example shown, the second protrusion 303 and the third protrusion 304 are respectively formed at positions 90° apart from the first protrusion 302 in the circumferential direction of the reaction tube 203. That is, the second protrusion 303 is formed opposite to the third protrusion 304.

[0034] The first protrusion 302 is configured to form part of the processing chamber 201 inside and houses nozzles 249a and 249b. The second protrusion 303 is configured to form part of the processing chamber 201 inside and houses nozzle 249c. The third protrusion 304 is configured to form part of the processing chamber 201 inside and houses nozzle 249d.

[0035] like Figure 2As shown, nozzles 249a and 249b are respectively provided in the first protrusion 302 from below the reaction tube 203 upward along the arrangement direction of the wafer 200. Nozzles 249a and 249b are arranged adjacent to each other in the first protrusion 302. Nozzles 249a and 249b are arranged such that they are separated from the center of the wafer 200 which is moved into the processing chamber 201 and are opposite to the exhaust port 233 described later.

[0036] like Figure 2 As shown, nozzles 249c and 249d are respectively provided above the reaction tube 203 along the arrangement direction of the wafer 200 within the second protrusion 303 and the third protrusion 304. That is, nozzles 249c and 249d are positioned at predetermined distances from nozzles 249a and 249b in the circumferential direction of the wafer 200 being transported. Here, the predetermined distance refers to the distance of an arc greater than one times the distance between the inner wall surface of the reaction tube 203 and the periphery of the wafer 200 (i.e., the gap G), and is the distance of an arc within a range of 15° to 120° from nozzles 249a and 249b in the circumferential direction of the wafer 200 being transported. In other words, it is the distance of an arc within a range of 15° to 120° formed by the straight line connecting the center of the processing gas nozzle to the center of the wafer 200 and the straight line connecting the centers of nozzles 249c and 249d to the center of the wafer 200. That is, nozzles 249c and 249d are positioned at a distance of more than one arc length G from nozzles 249a and 249b in the circumferential direction of the wafer 200 being moved, and are located at a position of 15° to 120° from the straight line connecting the center of the processing gas nozzle and the center of the wafer in the circumferential direction of the wafer being moved. Furthermore, nozzles 249c and 249d are arranged in a line-symmetrical manner with respect to the straight line connecting the center of the processing gas nozzle and the center of the exhaust port 233. That is, nozzle 249d is located in the region opposite to the region where nozzle 249c is located, within the region divided by the straight line connecting the center of the processing gas nozzle and the center of the exhaust port 233. Here, the center of the processing gas nozzle refers to the center of nozzle 249a, the center of nozzle 249b, or the midpoint between the centers of nozzles 249a and 249b.

[0037] Here, the gas supplied from nozzles 249a to 249d is either blown out in the direction of the gas supply holes 250a to 250d or drawn in around them, thereby creating a vortex circulation. If nozzles 249c and 249d are positioned at a position less than 15° circumferentially on the wafer 200 from the straight line connecting the center of the processing gas nozzle to the wafer center, then nozzles 249a and 249b are close to nozzles 249c and 249d, and the vortex of the processing gas supplied from nozzles 249a and 249b merges with the vortex of the inert gas supplied from nozzles 249c and 249d. That is, the processing gas is diluted by the inert gas supplied from nozzles 249c and 249d.

[0038] Furthermore, if nozzles 249c and 249d are positioned at an angle greater than 120° circumferentially to the wafer 200 from the center of the processing gas nozzle and the wafer center, the range of interference between the processing gas supplied from nozzles 249a and 249b and the inert gas supplied from nozzles 249c and 249d is reduced, thus minimizing the impact on the wafer 200 and reducing the influence of inert gas eddies. Therefore, nozzles 249c and 249d are preferably positioned at a distance of at least one arc length from nozzles 249a and 249b, maintaining a gap G, and at an angle of 15° to 120° circumferentially to the wafer 200 from the center of the processing gas nozzle and the wafer center.

[0039] Gas supply holes 250a-250d are respectively provided on the side of nozzles 249a-249d. Gas supply holes 250a and 250b can supply gas towards the center of wafer 200. Gas supply holes 250a and 250b are arranged in multiple ways, opening from the bottom to the top of reaction tube 203 towards the center of each wafer 200.

[0040] Gas supply holes 250c and 250d can supply inert gas to nozzles 249a and 249b, respectively. That is, multiple gas supply holes 250c and 250d are provided such that they open from the lower part of the reaction tube 203 to the upper part and then toward the nozzles 249a and 249b, respectively.

[0041] Specifically, gas supply holes 250c and 250d are respectively formed to open at, for example, 45° from the center of the wafer towards the nozzles 249a and 249b, and are configured to supply inert gas in a direction that passes over the wall of the first protrusion 302. That is, gas supply holes 250c and 250d are configured to open at, for example, 45° from the center of the wafer towards the nozzles 249a and 249b from the lower to the upper part of the reaction tube 203, and are arranged in multiple ways to open towards the inner side of the wall of the first protrusion 302, so as to supply inert gas in a direction that passes over the wall of the first protrusion 302. By supplying inert gas from these gas supply holes 250c and 250d, vortices of inert gas are formed near the second protrusion 303 and the third protrusion 304, respectively. These vortices of inert gas prevent the flow of processing gas flowing from the upstream side of the gap G region. That is, they prevent the processing gas flowing from the upstream side of the gap G region from flowing into the downstream side of the gap G region. In addition, the processing gas flowing upstream of the gap G region flows into the wafer 200 center direction without mixing with the inert gas through the vortex of the inert gas.

[0042] Here, if the gas supply holes 250c and 250d are oriented further towards the nozzles 249a and 249b than towards the direction of passing over the wall, the inert gas supplied from the nozzles 249c and 249d will collide within the first protrusion 302, reducing the diameter of the inert gas vortex and thus weakening the aforementioned effect. Furthermore, if the gas supply holes 250c and 250d are oriented further towards the side opposite to the nozzles 249a and 249b (the exhaust side) than towards the direction of passing over the wall, the inert gas will be drawn into the vortex on the first protrusion 302 side and mixed with the processed gas, thus weakening the aforementioned effect.

[0043] A halosilane gas, for example containing Si as a predetermined element (main element) and a halogen element, is supplied as a raw material gas (processing gas) to the processing chamber 201 via the gas supply pipe 232a through MFC 241a, valve 243a, and nozzle 249a.

[0044] A hydrogen nitride gas, for example, is supplied as a nitriding gas to the processing chamber 201 via gas supply pipe 232b, MFC 241b, valve 243b, and nozzle 249b. This gas serves as a reactant with a chemical structure (molecular structure) different from that of the raw materials. The hydrogen nitride gas is used as an nitrogen source. Ammonia (NH3) can be used as an example of the hydrogen nitride gas.

[0045] Nitrogen (N2) gas is supplied to the processing chamber 201 from gas supply pipes 232c to 232f via MFCs 241c to 241f, valves 243c to 243f, gas supply pipes 232c, 232d, 232a, 232b, and nozzles 249c, 249d, 249a, and 249b, respectively, as an inert gas. The N2 gas functions as a purge gas, a carrier gas, and further as a film thickness control gas for controlling the in-plane film thickness distribution of the film formed on the wafer 200.

[0046] The main gas supply system consists of gas supply pipes 232a and 232b, MFCs 241a and 241b, and valves 243a and 243b. Additionally, the inert gas supply system consists of gas supply pipes 232c to 232f, MFCs 241c to 241f, and valves 243c to 243f.

[0047] An exhaust port 233 is provided in the reaction tube 203 as an exhaust section for venting the atmosphere from the processing chamber 201. For example... Figure 2 As shown in the horizontal cross-sectional view, the exhaust port 233 is positioned across the wafer 200 and opposite (facing) the nozzles 249a and 249b (gas supply ports 250a and 250b). An exhaust pipe 231 is connected to the exhaust port 233. The exhaust pipe 231 includes a pressure sensor 245, which acts as a pressure detector for the processing chamber 201. Furthermore, it is connected to a vacuum pump (vacuum exhaust device) 246 via an APC (Auto Pressure Controller) valve 244, which acts as a pressure regulator. The APC valve 244 is configured to allow for vacuum exhaust from the processing chamber 201 and its cessation by opening and closing the valve while the vacuum pump 246 is operating. Moreover, while the vacuum pump 246 is operating, the valve opening is adjusted based on the pressure information detected by the pressure sensor 245, thereby adjusting the pressure in the processing chamber 201. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0048] A sealing cap 219, serving as a furnace opening cover, is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. The sealing cap 219 is, for example, made of metal and formed in a disc shape. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cap 219, abutting against the lower end of the manifold 209. A rotation mechanism 267, which rotates the wafer boat 217 (described later), is provided below the sealing cap 219. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cap 219 and is connected to the wafer boat 217. The rotation mechanism 267 rotates the wafer 200 by rotating the wafer boat 217.

[0049] The sealing cap 219 is configured to be raised and lowered vertically by a boat lift 115, which is a lifting mechanism located outside the reaction tube 203. The boat lift 115 is configured as a transport device (transport mechanism) that moves the wafer 200 in and out of the processing chamber 201 by raising and lowering the sealing cap 219. Additionally, a gate 221, serving as a furnace opening cover, is provided below or to the side of the manifold 209 to hermetically seal the lower opening of the manifold 209 during the complete removal of the boat 217 from the processing chamber 201 by lowering the sealing cap 219. The gate 221, like the sealing cap 219, is disc-shaped, and an O-ring 220c is provided on its upper surface to abut against the lower end of the manifold 209. The opening and closing of the gate 221 (raising and lowering, rotating, etc.) is controlled by a gate opening and closing mechanism 222.

[0050] The crystal boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 200 wafers 200, arranged in a horizontal position and aligned center-to-center in a vertical direction, in multiple layers, i.e., arranged at intervals. The crystal boat 217 is made of heat-resistant materials such as quartz or SiC. At the bottom of the crystal boat 217, multiple layers of heat-insulating plates 218, for example, made of heat-resistant materials such as quartz or SiC, are supported.

[0051] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. By adjusting the energizing of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature of the processing chamber 201 is adjusted to achieve the desired temperature distribution. The temperature sensor 263 is disposed along the inner wall of the reaction tube 203.

[0052] like Figure 3 As shown, the controller 121, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122, such as a touch panel.

[0053] The storage device 121c is configured such as flash memory or HDD (Hard Disk Drive). Within the storage device 121c, control programs that control the operation of the substrate processing apparatus and process flow describing the steps or conditions of the substrate processing described later are stored in a readable manner. The process flow is a combination of elements that enable the controller 121 to execute each step of the substrate processing described later and obtain a predetermined result, and functions as a program. Hereinafter, the process flow, control program, etc., are collectively referred to as a program. Additionally, the process flow is also simply referred to as a process. When using the term "program" in this specification, it may sometimes include only a process unit, only a control program unit, or both. RAM 121b is configured as a memory area (working area) that temporarily holds programs, data, etc., read by the CPU 121a.

[0054] I / O port 121d is connected to the aforementioned MFC241a~241f, valves 243a~243f, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, crystal boat elevator 115, gate opening and closing mechanism 222, etc.

[0055] CPU 121a is configured to read and execute control programs from storage device 121c, and to read processes from storage device 121c based on inputs such as operation commands from input / output device 122. CPU 121a is configured to control various gas flow adjustment operations performed by MFCs 241a to 241f, opening and closing operations of valves 243a to 243f, opening and closing operations of APC valve 244 and pressure adjustment operations of APC valve 244 based on pressure sensor 245, starting and stopping vacuum pump 246, temperature adjustment operations of heater 207 based on temperature sensor 263, rotation and rotation speed adjustment operations of crystal boat 217 performed by rotating mechanism 267, lifting and lowering operations of crystal boat 217 performed by crystal boat elevator 115, and opening and closing operations of gate 221 performed by gate opening and closing mechanism 222, etc., according to the content of the read processes.

[0056] The controller 121 is configured to install the aforementioned program stored in an external storage device (such as a hard disk, optical disc, MO disk, or USB memory) 123 onto a computer. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to as recording media. When the term "recording medium" is used in this specification, it may refer only to the storage device 121c, only to the external storage device 123, or both. Furthermore, the program can be provided to the computer without using the external storage device 123, but via communication means such as the Internet or dedicated lines.

[0057] (2) Film-forming treatment

[0058] use Figure 4 The following describes an example of the sequence for forming a silicon nitride film (SiN film) on a wafer 200, which serves as a substrate, as a step in the manufacturing process of a semiconductor device using the substrate processing apparatus described above. In the following description, the operation of each component constituting the substrate processing apparatus is controlled by the controller 121.

[0059] Figure 4 The film formation sequence shown is achieved by performing steps A and B in a loop n times (n is a predetermined number) to form a film containing Si and N, namely a SiN film, on wafer 200.

[0060] Step A forms a Si-containing layer as the first layer by supplying HCDS gas to the wafer 200 from nozzle 249a;

[0061] Step B forms a silicon nitride (SiN) layer as a second layer by supplying NH3 gas to the wafer 200 from nozzle 249b.

[0062] In this specification, for convenience, it is sometimes indicated as follows. Figure 4 The film formation sequence is shown.

[0063]

[0064] When the term "wafer" is used in this specification, it sometimes refers to the wafer itself, and sometimes to a laminate of the wafer and a predetermined layer or film formed on its surface. When the term "surface of a wafer" is used in this specification, it sometimes refers to the surface of the wafer itself, and sometimes to the surface of a predetermined layer, etc., formed on the wafer. In this specification, "substrate" includes the meaning of "wafer".

[0065] (Wafer supply and wafer boat loading)

[0066] When multiple wafers 200 are loaded (wafer supply) into the wafer boat 217, the gate 221 moves via the gate opening and closing mechanism 222, and the lower opening of the manifold 209 opens (gate opens). Afterwards, as... Figure 1 As shown, the crystal boat 217 supporting multiple wafers 200 is lifted by the crystal boat elevator 115 and moved into the processing chamber 201 (crystal boat loading). After the moving is completed, the sealing cover 219 is in a state where the lower end of the manifold 209 is sealed by the O-ring 220b.

[0067] (Pressure and temperature adjustment)

[0068] Vacuum pump 246 vents the processing chamber 201 (reduced pressure venting) to bring the processing chamber 201, i.e., the space containing the wafer 200, to the desired pressure (vacuum level). The pressure of the processing chamber 201 is measured by pressure sensor 245, and the APC valve 244 is controlled based on this measured pressure information. Additionally, heating is performed by heater 207 to bring the wafer 200 in the processing chamber 201 to the desired film deposition temperature. The energization of heater 207 is controlled based on temperature information detected by temperature sensor 263 to achieve the desired temperature distribution in the processing chamber 201. Furthermore, rotation of the wafer 200 is initiated using rotation mechanism 267. Venting of the processing chamber 201, heating of the wafer 200, and rotation are all performed continuously, at least until the processing of the wafer 200 is completed.

[0069] (Film-forming steps)

[0070] Then, proceed with the next steps A and B in sequence.

[0071] [Step A]

[0072] In this step, HCDS gas is supplied to the wafer 200 in the processing chamber 201.

[0073] Specifically, valve 243a is opened to allow HCDS gas to flow into gas supply pipe 232a. The HCDS gas flow rate is adjusted by MFC 241a and supplied into processing chamber 201 via nozzle 249a, then discharged from exhaust port 233. That is, HCDS gas is supplied to wafer 200. At this time, valve 243e can also be opened to allow N2 gas to flow into gas supply pipe 232e. The N2 gas flow rate is adjusted by MFC 241e and supplied into processing chamber 201 along with HCDS gas via nozzle 249a, then discharged from exhaust port 233. Furthermore, in step A, while HCDS gas is supplied to processing chamber 201 via nozzle 249a, N2 gas is supplied to processing chamber 201 via nozzles 249c and 249d respectively. This is done so that vortices of inert gas are formed near the second protrusion 303 and the third protrusion 304, respectively, causing the N2 gas supplied from nozzles 249c and 249d to be supplied towards nozzle 249a. The details will be described later.

[0074] In step A, the flow rate of the HCDS gas supplied from nozzle 249a is, for example, 1 sccm or more and 2000 sccm or less, preferably in the range of 10 sccm or more and 1000 sccm or less. Furthermore, the flow rates of the N2 gas supplied from nozzles 249c and 249d are, for example, 500 sccm each, a predetermined flow rate that is approximately 1 / 4 or more and 2 / 3 or less of the total flow rate of the HCDS gas including the N2 gas supplied from nozzle 249a.

[0075] Compared to the total flow rate of HCDS gas supplied from nozzle 249a, if the flow rate of N2 gas supplied from nozzles 249c and 249d is less than 1 / 4 of the total flow rate of HCDS gas, the N2 gas supplied from nozzles 249c and 249d is pushed away by the HCDS gas. That is, the raw material gas flowing in the gap G region is not diluted and flows downstream, reducing the total amount of raw material gas reaching the center of wafer 200. Consequently, the film thickness distribution formed on wafer 200 becomes concave, and the in-plane film thickness uniformity deteriorates.

[0076] Furthermore, when the flow rate of N2 gas supplied from nozzles 249c and 249d exceeds two-thirds of the total flow rate of HCDS gas relative to the total flow rate of HCDS gas supplied from nozzles 249a, the dilution effect of the raw material gas flowing in the gap G region through the N2 gas supplied from nozzles 249c and 249d becomes greater, resulting in an excessive increase in the total amount of raw material gas reaching the wafer center. That is, the film thickness distribution formed on wafer 200 becomes convex, and the in-plane film thickness uniformity deteriorates.

[0077] Therefore, the flow rate of N2 gas supplied from nozzles 249c and 249d is a predetermined flow rate that includes approximately 1 / 4 to 2 / 3 of the total flow rate of HCDS gas, including N2 gas supplied from nozzle 249a. Furthermore, these flow rate conditions vary depending on the surface area of ​​wafer 200, wafer pitch, width of gap G, position of nozzles 249c and 249d, orientation of gas supply orifices 250c and 250d of nozzles 249c and 249d, gas type, film formation temperature, processing pressure, etc.

[0078] The HCDS gas supply time is, for example, a predetermined time within the range of 1 second to 120 seconds, preferably 1 second to 60 seconds. The pressure in the processing chamber 201 is, for example, a predetermined pressure within the range of 1 Pa to 2666 Pa, preferably 67 Pa to 1333 Pa. The temperature (film formation temperature) of the wafer 200 is, for example, a predetermined temperature within the range of 250°C to 800°C, preferably 400°C to 750°C, more preferably 550°C to 700°C.

[0079] By supplying HCDS gas and N2 gas to wafer 200 under the above conditions, a Si-containing layer containing Cl with a thickness of, for example, less than one atomic layer to many atomic layers (from less than one molecular layer to many molecular layers) is formed on the outermost surface of wafer 200 as a first layer. The Si-containing layer containing Cl can be a Si layer containing Cl, an HCDS adsorption layer, or both.

[0080] Under conditions of HCDS gas self-decomposition (thermal decomposition), a Si layer containing Cl is formed by depositing Si on wafer 200. Under conditions where HCDS gas does not undergo self-decomposition (thermal decomposition), an HCDS adsorption layer is formed by HCDS adsorption onto wafer 200. From the viewpoint of film formation rate, forming a Si layer containing Cl is preferred over forming an HCDS adsorption layer. Hereinafter, for convenience, the Cl-containing Si layer will also be simply referred to as a Si layer.

[0081] In step A, valves 243c to 243f are opened while HCDS gas is being supplied from nozzle 249a, allowing N2 gas to flow into gas supply pipes 232c, 232d, and 232b, and supplying N2 gas into the processing chamber 201 from nozzles 249c, 249d, and 249b. Maintaining a small supply of N2 gas from nozzle 249b is not necessary, but it is preferable from the viewpoint of suppressing the intrusion of HCDS gas into nozzle 249b. For this purpose, the supply of N2 gas from nozzle 249b preferably begins simultaneously with or before step A.

[0082] In step A, the flow rates (first flow rates) of N2 gas supplied from nozzles 249a and 249b are each smaller than the flow rates of N2 gas supplied from nozzles 249c and 249d. Furthermore, for each flow rate of N2 gas supplied from nozzles 249c and 249d, their combined flow rate is such that it is smaller than the total flow rate of HCDS gas and N2 gas supplied from nozzle 249a.

[0083] After forming the first layer with the desired thickness and in-plane thickness distribution, valve 243a is closed to stop the supply of HCDS gas. At this time, APC valve 244 remains open, and vacuum pump 246 is used to vent the processing chamber 201, removing any unreacted or HCDS gas remaining in the processing chamber 201 that contributed to the formation of the first layer. N2 gas supplied from nozzles 249a to 249d acts as a purging gas, thereby purging the processing chamber 201 (purging step).

[0084] [Step B]

[0085] After step A is completed, NH3 gas is supplied to the wafer 200 in the processing chamber 201, that is, the first layer formed on the wafer 200.

[0086] In this step, valves 243b, 243c-243f are controlled to open and close in the same order as valves 243a, 243c-243f in step A. NH3 gas is regulated by MFC 241b, supplied to the processing chamber 201 via nozzle 249b, and discharged from exhaust port 233. At this time, NH3 gas is supplied to wafer 200.

[0087] In step B, the supply flow rate of NH3 gas from nozzle 249b is a predetermined flow rate, for example, within the range of 1000 to 10000 sccm. At this time, the flow rate of N2 gas supplied from nozzles 249c and 249d is a predetermined flow rate of approximately one-quarter to two-thirds of the total flow rate of NH3 gas including the N2 gas supplied from nozzle 249b. By setting it this way, the same effect as described in step A above can be obtained.

[0088] The NH3 gas supply time is set to a predetermined time, for example, between 1 second and 120 seconds, preferably between 1 second and 60 seconds. The pressure in the processing chamber 201 is set to a predetermined pressure, for example, between 1 Pa and 4000 Pa, preferably between 1 Pa and 3000 Pa. By setting the pressure higher than in step A, even if thermally activated NH3 gas is used instead of plasma, a chemical reaction with the first layer can be carried out at a predetermined rate to form the second layer. Other processing conditions are set to the same as in step A. In addition, in step B, the supply of N2 gas from nozzles 249c and 249d is less important than in step A, and is sometimes unnecessary.

[0089] When NH3 and N2 gases are supplied to wafer 200 under the above conditions, at least a portion of the first layer formed on wafer 200 is nitrided (modified). This forms a second layer, i.e., a SiN layer, containing Si and N, on wafer 200. During the formation of the second layer, impurities such as Cl contained in the first layer are converted into a gaseous substance containing at least Cl during the modification reaction of the first layer using NH3 gas, and discharged from processing chamber 201. That is, impurities such as Cl in the first layer are extracted or removed from the first layer, thereby separating from it. Thus, the second layer becomes a layer with fewer impurities such as Cl than the first layer.

[0090] After the second layer is formed, valve 243b is closed to stop the supply of NH3 gas. Then, through the same processing steps and conditions as the purging step in step A, unreacted NH3 gas or reaction byproducts that contribute to the formation of the second layer remaining in processing chamber 201 are removed from processing chamber 201.

[0091] [Scheduled number of times]

[0092] By performing steps A and B asynchronously, a SiN film with a predetermined composition and thickness can be formed on wafer 200 at least once (n times). It is preferable to repeat this cycle multiple times. That is, if the thickness of the second layer formed during one cycle is thinner than the desired thickness, it is preferable to repeat this cycle multiple times until the thickness of the SiN film formed by stacking the second layer reaches the desired thickness.

[0093] (After purging - atmospheric pressure recovery)

[0094] After a film of desired composition and thickness is formed on wafer 200, N2 gas is supplied as a purging gas to processing chamber 201 through nozzles 249a to 249d, and exhaust gas is discharged from exhaust port 233. This purging process removes residual gases and reaction byproducts from processing chamber 201 (post-purging). Afterward, the atmosphere in processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in processing chamber 201 is restored to atmospheric pressure (atmospheric pressure restoration).

[0095] (Crystal Boat Unloading and Wafer Unloading)

[0096] The sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported by the crystal boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 (crystal boat unloading). After the crystal boat is unloaded, the gate 221 is moved, and the lower end opening of the manifold 209 is sealed by the gate 221 via the O-ring 220c (gate closing). After being moved to the outside of the reaction tube 203, the processed wafer 200 is removed from the crystal boat 217 (wafer unloading).

[0097] (3) Simulation

[0098] Use the above Figure 1 The processing furnace 202 of the substrate processing apparatus shown performs... Figure 4 The processing in the film formation sequence shown forms a SiN film on a patterned wafer with a surface area 70 times that of a bare wafer. Figure 5 (A) in the text represents Figure 4 The diagram shows the concentration distribution of raw material free radicals in processing furnace 202 during step A of the film formation sequence. Figure 5 (B) in the text represents Figure 5 A diagram of gas flow near the second protrusion 303 in (A).

[0099] like Figure 5 As shown in (A), the gas supply holes 250c and 250d of nozzles 249c and 249d are respectively oriented in a direction that directs the N2 gas from the processing gas nozzle side to pass over the wall of the first protrusion 302, rather than in a direction toward the wafer center. Furthermore, nozzle 249d has the same structure as nozzle 249c and achieves the same effect; therefore, nozzle 249c will be used in the following description.

[0100] In this simulation, the flow rate of the feed gas (HCDS gas) supplied from nozzle 249a is 200 sccm, and the flow rate of the N2 gas supplied from nozzle 249a is 12000 sccm. Simultaneously, the flow rates of the N2 gas supplied from nozzles 249c and 249d are 6250 sccm each. The pressure inside the processing chamber 201 is set to 140 Pa, the film-forming temperature is set to 700℃, and other processing conditions are the same as in step A described above.

[0101] Here, when forming a film on a large surface area wafer, most of the feed gas supplied from nozzle 249a flows in the gap G region between the periphery of wafer 200 and the inner wall of reaction tube 203, rather than flowing in the narrow space between wafers 200 (between wafer pitches). As a result, the feed gas diffuses at the periphery of the wafer, reducing the total amount of feed gas flowing on the wafer, and depleting the feed gas reaching the center of the wafer. Furthermore, the feed gas flowing in the gap G region increases the film thickness at the periphery of the wafer, resulting in the formation of a concave film on the wafer.

[0102] As in this embodiment, when N2 gas supplied from nozzle 249c is supplied toward nozzle 249a in a direction that sweeps over the wall of the first protrusion 302, as... Figure 5 As shown in (B), an inert gas (N2 gas) vortex is formed at a location overlapping a portion of the peripheral portion of the wafer 200 near the second protrusion 303. This inert gas vortex blocks the feed gas flowing in the gap G region near the second protrusion 303, preventing the feed gas from flowing further downstream of the nozzle 249c into the gap G region. Thus, the concentration of the feed gas is reduced and diluted in a portion of the peripheral portion of the wafer 200. This results in the suppression of film thickness increase at the peripheral portion of the wafer 200.

[0103] Furthermore, the inert gas vortex prevents the raw material gas blocked near the second protrusion 303 from mixing with the N2 gas, and instead guides it towards the center of the wafer 200. The inert gas vortex repels the raw material gas, causing the flow direction of the raw material gas to change to the flow direction of the inert gas vortex. In other words, supplying raw material gas to the center of the wafer 200 increases the film thickness at the center of the wafer 200.

[0104] Furthermore, the N2 gas supplied from nozzle 249c flows towards exhaust port 233 through the vortex of the inert gas and is discharged in the gap G region on the downstream side. That is, the gap G region on the downstream side of the second protrusion 303 is diluted by N2 gas, suppressing the increase of film thickness at the periphery of wafer 200.

[0105] That is, by utilizing the supply of inert gas from nozzles 249c and 249d to form an inert gas vortex, the dilution range of the raw material gas on wafer 200 can be adjusted.

[0106] Furthermore, the magnitude of the inert gas vortex can be controlled by adjusting the positions of nozzles 249c and 249d, the orientation of the gas supply orifices 250c and 250d of nozzles 249c and 249d, the wall shape of the reaction tube 203, or the flow rate of the inert gas supplied from nozzles 249c and 249d relative to the total flow rate of the raw material gas. Therefore, the film thickness can be controlled by dilution from the periphery of the wafer to any distance.

[0107] Therefore, it is possible to control the in-plane film thickness distribution, and improve the in-plane uniformity of film thickness even when processing patterned wafers with large surface areas.

[0108] The following describes the embodiments.

[0109] Example 1

[0110] Figure 6 This embodiment uses Figure 1 and Figure 2 The substrate processing apparatus shown, through Figure 4 The in-plane film thickness uniformity of the wafers with SiN films formed in the shown film deposition sequence was evaluated. Figure 6 Comparative Example 1 evaluated the in-plane film thickness uniformity of a wafer on which a SiN film was formed using a substrate processing apparatus without convection nozzles in the processing chamber. Figure 6 Comparative Example 2 evaluated the in-plane film thickness uniformity of a wafer on which a SiN film was formed using a substrate processing apparatus having two convection nozzles in a processing chamber. In Comparative Example 2, the two convection nozzles were respectively positioned at a position 90° away from the processing gas nozzle in the circumferential direction of the wafer 200, with the gas supply orifice of each convection nozzle facing the center of the wafer 200.

[0111] The in-plane film thickness uniformity of the wafer formed in this embodiment is ±0.18%, the in-plane film thickness uniformity of the wafer formed in Comparative Example 1 is ±10.6%, and the in-plane film thickness uniformity of the wafer formed in Comparative Example 2 is ±4.45%.

[0112] In Comparative Example 1 without convection nozzles, compared to Comparative Example 2 using convection nozzles and this embodiment, it was confirmed that the film thickness at the periphery (both ends) of the wafer was thicker than that at the center of the wafer, resulting in poor in-plane film thickness uniformity. Furthermore, in this embodiment using convection nozzles, compared to Comparative Example 2 using convection nozzles, it was confirmed that the increase in film thickness at the periphery (both ends) of the wafer 200 was suppressed, and in-plane film thickness uniformity was improved.

[0113] In Comparative Example 2, the N2 gas supplied by the side convection device mixes with the raw material gas, reducing the dilution effect of the raw material gas at the wafer periphery. Furthermore, the dilution of the raw material gas reduces the total amount reaching the wafer center. Consequently, the raw material gas flows out into the downstream gap G region, and through diffusion of this outflowing raw material gas, the film thickness at the wafer periphery increases. As a result, the in-plane film thickness distribution becomes concave.

[0114] In contrast, in this embodiment, the inert gas vortex formed by the N2 gas supplied by the side convection device does not mix with the raw material gas, thus altering the flow of the raw material gas flowing in the gap G region. As a result, the concentration of the raw material gas flowing in the gap G region decreases, and the increase in film thickness at the wafer periphery is suppressed. Furthermore, through this inert gas vortex, the raw material gas flowing in the gap G region is guided towards the wafer center, increasing the flow rate of the raw material gas reaching the wafer center. Consequently, through the inert gas vortex, the downstream gap G region is diluted, and the increase in film thickness at the periphery of wafer 200 is suppressed.

[0115] Therefore, it was confirmed that by orienting the gas supply orifice of the convection nozzle toward the processing gas nozzle side further than the wafer center side, the in-plane film thickness uniformity was improved.

[0116] Example 2

[0117] Next, the flow dependence of inert gas in convection nozzles with varying film thicknesses was compared. Figure 7 (A) in the figure is a graph showing the relationship between the flow rate of the inert gas based on the convection nozzle and the in-plane film thickness distribution in Comparative Example 2 above. Figure 7 (B) in the figure is a graph showing the relationship between the flow rate of the inert gas based on the convection nozzle and the in-plane film thickness distribution in the above embodiment.

[0118] like Figure 7As shown in (A), in Comparative Example 2, if the flow rate of N2 gas supplied from the convection nozzle is low, the film thickness at the wafer periphery increases. This is believed to be because the N2 gas supplied from the convection nozzle cannot sufficiently dilute the feed gas flowing in the gap G, thus preventing the feed gas from reaching the wafer center. Furthermore, increasing the flow rate of N2 gas supplied from the convection nozzle can reduce the film thickness at the wafer periphery, but a localized increase in film thickness near the periphery is observed. This can be attributed to the wafer periphery being diluted by the N2 gas supplied from the convection nozzle, but concentration diffusion occurs near the periphery due to the concentration difference with the feed gas flowing through the gap G. Thus, Comparative Example 2 is not effective for the localized increase in film thickness near the periphery. Here, the distance between the wafer periphery and the wafer center is 80 mm or more and 120 mm or less, and the distance between the area near the wafer periphery and the wafer center is 120 mm or more and 150 mm or less. If the flow rate of N2 gas is further increased, an increase in film thickness at the center of the wafer is confirmed. This can be attributed to the fact that if a larger flow rate of N2 gas is supplied from the convection nozzle, the N2 gas is supplied towards the center of the wafer, thus diluting the raw material gas at the periphery of the wafer. However, due to the N2 gas supplied from the convection nozzle, a large amount of raw material gas in gap G flows towards the center of the wafer.

[0119] like Figure 7 As shown in (B), in this embodiment, it was confirmed that increasing the flow rate of N2 gas supplied from the convection nozzle suppresses the local increase in film thickness near the wafer periphery, while increasing the film thickness at the wafer center. Therefore, without causing a local increase in film thickness at the wafer edge, in-plane unevenness can be controlled, and the in-plane film thickness distribution of the wafer will not become a W-shaped distribution. That is, it was confirmed that by adjusting the flow rate of the inert gas supplied from the convection nozzle, the in-plane film thickness distribution can be controlled, and the in-plane film thickness uniformity can be improved.

[0120] (4) Effects of this implementation method

[0121] According to this embodiment, one or more of the following effects can be obtained.

[0122] (a) When processing gas is supplied to the wafer from the processing gas nozzle, inert gas is supplied to the processing gas nozzle from a convection nozzle located at a predetermined distance from the processing gas nozzle in the circumferential direction of the wafer, thereby forming a vortex of inert gas, which can improve the in-plane film thickness uniformity of the film formed on the wafer.

[0123] (b) Through the vortex of the inert gas, the processing gas flowing in the gap G region between the periphery of the wafer and the inner wall of the reaction tube does not mix with the inert gas and is repelled, changing the flow direction of the inert gas vortex towards the center of the wafer. Therefore, it is possible to increase the supply of raw material gas to the center of the wafer, thereby increasing the film thickness at the center of the wafer.

[0124] (c) In addition, by forming an inert gas vortex near the second protrusion 303 and the third protrusion 304, the inflow of processing gas into the gap G region between the periphery of the wafer and the inner wall of the reaction tube can be suppressed, the processing gas flowing into the gap G region downstream of the second protrusion 303 and the third protrusion 304 can be reduced, and the increase in film thickness at the periphery of the wafer can be suppressed.

[0125] (d) Furthermore, by forming an inert gas vortex that overlaps with a portion of the wafer's periphery, the concentration of the raw material gas in that portion of the wafer's periphery is reduced and diluted. This suppresses the increase in film thickness at the wafer's periphery.

[0126] (e) Furthermore, through the vortex of inert gas near the second protrusion 303 and the third protrusion 304, the inert gas supplied by the convection nozzle flows towards the exhaust port through the downstream gap G region and is discharged, thereby diluting the gap G region downstream of the second protrusion 302 and the third protrusion 304 and suppressing the increase in film thickness at the periphery of the wafer 200. Thus, by supplying inert gas to the temperature sensor 263 located in the downstream gap G region of the processing chamber 201, and significantly reducing the amount of processing gas, it is possible to suppress deposits caused by the processing gas. Therefore, since contamination caused by deposits on the temperature sensor 263 is protected, the maintenance cycle of the temperature sensor 263 can be improved.

[0127] (f) By controlling the flow rate of the inert gas supplied by the convection nozzle, a vortex of inert gas is formed, which can adjust the range of dilution effect of the processing gas on the wafer 200.

[0128] (g) In addition, by configuring the two convection nozzles in a line symmetrical manner with respect to the straight line connecting the center of the processing gas nozzle and the center of the exhaust port, the in-plane film thickness uniformity of the film formed on the wafer can be improved.

[0129] (h) By adjusting the setting position of the convection nozzle, the orientation of the gas supply hole formed in the convection nozzle, and the flow rate of the inert gas supplied by the convection gas nozzle relative to the total flow rate of the processing gas, the in-plane film thickness distribution formed on the wafer can be controlled, thereby improving the uniformity of the in-plane film thickness.

[0130] The above describes one embodiment of this disclosure. However, this disclosure is not limited to the above embodiment, and various modifications can be made without departing from its spirit.

[0131] In the above embodiments, two nozzles, nozzle 249c and nozzle 249d, were used as convection nozzles for illustration. However, this disclosure is not limited to this, and there may be any one or more convection nozzles. It should be noted that when there is one convection nozzle, since the film thickness at the periphery of the wafer on the side without the convection nozzle increases, it is preferable to have two or more nozzles.

[0132] Furthermore, in the above embodiment, an example of forming a SiN film on wafer 200 was described as a substrate processing step, but this disclosure is not limited to this. For example, in addition to SiN films, films containing silicon compounds containing Si, or films containing metal compounds such as tungsten (W), titanium (Ti), and hafnium (Hf) can also be appropriately applied.

[0133] Furthermore, the above-described embodiments can be suitably applied to film formation processes, such as those involving CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), forming oxide films, forming nitride films, and forming films containing metals.

[0134] Furthermore, the processes used for substrate processing are preferably prepared individually according to the processing requirements and pre-stored in the storage device 121c via electrical communication lines and external storage device 123. Moreover, preferably, at the start of processing, the CPU 121a selects the appropriate process from among the multiple processes stored in the storage device 121c, based on the substrate processing requirements. This allows for the highly reproducible formation of films of various types, compositions, qualities, and thicknesses within a single substrate processing apparatus. Additionally, it reduces the workload for operators, thereby preventing operational errors and enabling rapid initiation of processing.

[0135] Furthermore, the aforementioned process is not limited to the case of new manufacturing; for example, it can also be prepared by modifying an existing process already installed in the substrate processing apparatus. In the case of process modification, the modified process can also be installed in the substrate processing apparatus via an electrical communication line and a recording medium containing the process. Alternatively, the input / output device 122 of an existing substrate processing apparatus can be operated to directly modify an existing process already installed in the substrate processing apparatus.

[0136] In addition, it is not limited to semiconductor manufacturing apparatuses that process semiconductor wafers, such as the substrate processing apparatus mentioned above, but can also be applied to LCD (Liquid Crystal Display) manufacturing apparatuses that process glass substrates.

[0137] Explanation of reference numerals in the attached figures

[0138] 200 wafers (substrates)

[0139] 201 Processing Room

[0140] 233 exhaust port

[0141] 249a nozzle (processing gas nozzle)

[0142] 249b nozzle (processing gas nozzle)

[0143] 249c nozzle (inert gas nozzle)

[0144] 249d nozzle (inert gas nozzle)

[0145] 302 First Protrusion

[0146] 303 Second Protrusion

[0147] 304 Third protrusion.

Claims

1. A substrate processing apparatus, characterized in that, have: The reaction tube, which constitutes the processing chamber of the processing substrate, has a first protrusion protruding outward in a manner that accommodates a processing gas nozzle, and a second and third protrusion protruding outward in a manner that accommodates an inert gas nozzle. as well as An exhaust section for venting the atmosphere in the processing chamber. The angle θ formed by the straight line connecting the center of the first protrusion to the center of the substrate and the straight line connecting the centers of the second protrusion and the third protrusion to the center of the substrate is in the range of 15° and 120° respectively, and the second protrusion and the third protrusion are arranged symmetrically with respect to the straight line connecting the center of the first protrusion to the center of the exhaust portion. The inert gas supplied from the inert gas nozzle is supplied toward the processing gas nozzle, such that a vortex of the inert gas is formed near the second protrusion and the third protrusion.

2. The substrate processing apparatus according to claim 1, characterized in that, The processing gas supplied from the processing gas nozzle and flowing between the end of the substrate and the inner wall of the reaction tube flows toward the center of the substrate through the vortex of the inert gas.

3. The substrate processing apparatus according to claim 1, characterized in that, The inert gas supplied from the inert gas nozzle flows toward the exhaust section between the end of the substrate and the inner wall of the reaction tube.

4. The substrate processing apparatus according to claim 1, characterized in that, The inert gas vortex is formed to overlap with a portion of the periphery of the substrate.

5. The substrate processing apparatus according to claim 4, characterized in that, The concentration of the processing gas supplied from the processing gas nozzle decreases at a portion of the periphery of the substrate that forms the vortex of the inert gas.

6. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that, It is equipped with two inert gas nozzles.

7. The substrate processing apparatus according to claim 2, characterized in that, The vortex of the inert gas does not mix with the processing gas and repels it, and the flow direction of the processing gas changes to the flow direction of the vortex of the inert gas.

8. The substrate processing apparatus according to claim 1, characterized in that, The flow rate of the inert gas supplied from the inert gas nozzle is more than 1 / 4 and less than 2 / 3 of the total flow rate of the process gas supplied from the process gas nozzle.

9. The substrate processing apparatus according to claim 1, characterized in that, The inert gas nozzle has an opening. The opening faces the opening of the processing gas nozzle.

10. A method for manufacturing a semiconductor device, characterized in that, have: In the process of feeding a substrate into a reaction tube, the reaction tube constitutes a processing chamber for processing the substrate and has a first protrusion protruding outward in a manner that accommodates a processing gas nozzle and a second and third protrusion protruding outward in a manner that accommodates an inert gas nozzle. The angle θ formed by the straight line connecting the center of the first protrusion to the center of the substrate and the straight line connecting the centers of the second and third protrusions to the center of the substrate is in the range of 15° and 120° respectively. Furthermore, the second and third protrusions are symmetrically arranged with respect to the straight line connecting the center of the first protrusion to the center of the exhaust section. The exhaust section is used to exhaust the atmosphere of the processing chamber. as well as The process of supplying processing gas from the processing gas nozzle into the processing chamber and processing the substrate. In the process of processing the substrate, inert gas is supplied from the inert gas nozzle toward the processing gas nozzle, such that a vortex of the inert gas is formed near the second protrusion and the third protrusion.

11. A program product, characterized in that, The following steps are performed by the substrate processing apparatus using a computer: The step of moving a substrate into a reaction tube, wherein the reaction tube constitutes a processing chamber for processing the substrate, and has a first protrusion protruding outward in a manner that accommodates a processing gas nozzle, and a second and third protrusion protruding outward in a manner that accommodates an inert gas nozzle. The angle θ formed by the straight line connecting the center of the first protrusion to the center of the substrate and the straight line connecting the centers of the second and third protrusions to the center of the substrate is in the range of 15° and 120° respectively. Furthermore, the second and third protrusions are symmetrically arranged with respect to the straight line connecting the center of the first protrusion to the center of the exhaust section, wherein the exhaust section is used to exhaust the atmosphere of the processing chamber. The step of supplying processing gas from the processing gas nozzle to the processing chamber to process the substrate; as well as In the step of processing the substrate, an inert gas is supplied from the inert gas nozzle toward the processing gas nozzle, such that a vortex of the inert gas is formed near the second protrusion and the third protrusion.

12. A substrate processing method, characterized in that, have: In the process of feeding a substrate into a reaction tube, the reaction tube constitutes a processing chamber for processing the substrate and has a first protrusion protruding outward in a manner that accommodates a processing gas nozzle and a second and third protrusion protruding outward in a manner that accommodates an inert gas nozzle. The angle θ formed by the straight line connecting the center of the first protrusion to the center of the substrate and the straight line connecting the centers of the second and third protrusions to the center of the substrate is in the range of 15° and 120° respectively. Furthermore, the second and third protrusions are symmetrically arranged with respect to the straight line connecting the center of the first protrusion to the center of the exhaust section. The exhaust section is used to exhaust the atmosphere of the processing chamber. as well as The process of supplying processing gas from the processing gas nozzle into the processing chamber and processing the substrate. In the process of processing the substrate, inert gas is supplied from the inert gas nozzle toward the processing gas nozzle, such that a vortex of the inert gas is formed near the second protrusion and the third protrusion.

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