Information processing apparatus, information processing method, and semiconductor manufacturing system

Abstract

An information processing apparatus of one aspect of the present disclosure has a processor and a storage device, the processor acquires data of each parameter provided from each of a light source apparatus that generates pulsed light and an exposure apparatus that exposes a wafer with the pulsed light output from the light source apparatus, and time data associated with the data, according to the acquired data and time data, performs classification of whether data at a time when the wafer is exposed to the pulsed light or data at a time other than the exposure, for each record of data associated with the same time data, associates attribute information corresponding to the classification, and causes the storage device to store the data and time data associated with the attribute information, and generates a graph using the data read out from the storage device.

Description

Technical Field

[0001] This disclosure relates to information processing apparatus, information processing method, and semiconductor manufacturing system. Background Technology

[0002] In recent years, with the miniaturization and high integration of semiconductor integrated circuits, there has been a demand for higher resolution in semiconductor exposure equipment. Therefore, the use of shorter wavelengths of light emitted from exposure light sources has been developed. For example, as gas laser devices for exposure, KrF excimer lasers using lasers with an output wavelength of approximately 248 nm and ArF excimer lasers using lasers with an output wavelength of approximately 193 nm are examples.

[0003] The natural oscillating light from KrF and ArF excimer lasers has a relatively wide spectral linewidth, approximately 350–400 pm. Therefore, when using projection lenses made of materials that allow ultraviolet light to pass through KrF and ArF lasers, chromatic aberration sometimes occurs. As a result, resolution may be reduced. Therefore, it is necessary to narrow the spectral linewidth of the laser output from the gas laser device to a level that eliminates chromatic aberration. Thus, in the laser resonator of a gas laser device, a line-narrow module (LNM) containing narrowing elements (etalon, grating, etc.) is sometimes included to narrow the spectral linewidth. Hereinafter, gas laser devices with narrowed spectral linewidths will be referred to as narrow-bandgap gas laser devices.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2008-98282

[0007] Patent Document 2: International Publication No. 2019 / 043780

[0008] Patent Document 3: Japanese Patent Application Publication No. 2006-237052 Summary of the Invention

[0009] One aspect of the information processing apparatus disclosed herein includes a processor and a storage device, wherein the processor acquires data for each parameter provided by a light source device and an exposure device, and time data associated with the data, the light source device generating pulsed light, and the exposure device exposing a wafer by the pulsed light output from the light source device; the processor, based on the acquired data and time data, classifies data according to each record of data associated with the same time data, distinguishing whether it is data during exposure when the pulsed light irradiates the wafer, or data during non-exposure time other than the exposure time; the processor associates attribute information representing the attribute corresponding to the classification with the records respectively; the processor causes the storage device to store the data and time data associated with the attribute information; and the processor uses the data read from the storage device to generate a graph.

[0010] Another aspect of this disclosure discloses an information processing method executed by a processor, wherein the information processing method includes the following steps: the processor acquires data for each parameter provided by a light source device and an exposure device, the light source device generating pulsed light, and the exposure device exposing a wafer by the pulsed light output from the light source device; the processor, based on the acquired data and time data, classifies each record of data associated with the same time data into data during exposure when the pulsed light irradiates the wafer, and data during non-exposure periods other than the exposure time, and associates attribute information representing the attributes corresponding to the classification with the records respectively; the processor causes a storage device to store the data and time data associated with the attribute information; and the processor uses the data read from the storage device to generate a chart.

[0011] Another aspect of the semiconductor manufacturing system disclosed herein includes: a light source device that generates pulsed light; an exposure device that exposes a wafer using pulsed light output from the light source device; and an information processing device, wherein the information processing device has a processor and a storage device, the processor acquiring data for each parameter provided by each of the light source device and the exposure device, the light source device generating pulsed light, and the exposure device exposing the wafer using pulsed light output from the light source device; the processor, based on the acquired data and the time data, classifying data according to each record of data associated with the same time data into data during exposure when the pulsed light irradiates the wafer, and data during non-exposure periods other than exposure time, associating attribute information representing attributes corresponding to the classification with the records respectively; the processor causing the storage device to store the data associated with the attribute information and the time data; and the processor using the data read from the storage device to generate a graph. Attached Figure Description

[0012] Hereinafter, several embodiments of the present disclosure will be described as simple examples with reference to the accompanying drawings.

[0013] Figure 1 The structure of a comparative example laser device management system is shown in general.

[0014] Figure 2 This schematically illustrates an example of the timing of pulsed laser output from a laser device through sudden operation.

[0015] Figure 3 The outline of the scanning exposure is shown schematically.

[0016] Figure 4 This is a flowchart illustrating an example of the process by which the chip data collection control unit controls the writing of data to the storage unit of the information processing device.

[0017] Figure 5 This is a simplified illustration of an example of data stored in the storage section of an information processing device.

[0018] Figure 6 This is a simplified illustration of an example of data stored in the storage section of an information processing device.

[0019] Figure 7 A structural example of a comparative semiconductor manufacturing system is shown in general.

[0020] Figure 8 This is a flowchart illustrating an example of the main process flow performed by an information processing device.

[0021] Figure 9 It shows that it is applied to Figure 8 The flowchart is an example of a subprocess for step S202 in the flowchart.

[0022] Figure 10 It shows that it is applied to Figure 8 The flowchart is an example of a subprocess for step S203 in the flowchart.

[0023] Figure 11 An example of a mapped image is shown in outline.

[0024] Figure 12 This is a flowchart illustrating another example of the main process performed by an information processing device.

[0025] Figure 13 An example of a timeline graph showing the parameters of a laser device obtained from an information processing device.

[0026] Figure 14 A schematic example of the structure of a semiconductor manufacturing system including a chart display device according to Embodiment 1 is shown.

[0027] Figure 15 It is a block diagram that roughly illustrates the functions of the chart display device.

[0028] Figure 16 This is a flowchart illustrating an example of the main process performed by the chart display device.

[0029] Figure 17 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S302 in the flowchart.

[0030] Figure 18 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S304 in the flowchart.

[0031] Figure 19 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S305 in the flowchart.

[0032] Figure 20 An example of a table containing exposure / non-exposure information generated by a chart display device is shown.

[0033] Figure 21 A schematic diagram of the structure of a semiconductor manufacturing system including a timeline chart display device according to Embodiment 2 is shown.

[0034] Figure 22 This is a block diagram that roughly illustrates the functions of a timeline chart display device.

[0035] Figure 23 This is a flowchart illustrating an example of the main process performed by the timeline chart display device.

[0036] Figure 24 It shows that it is applied to Figure 23 The flowchart is an example of a subprocess for step S306 in the flowchart.

[0037] Figure 25 It shows that it is applied to Figure 23 The flowchart is an example of a subprocess for step S308 in the flowchart.

[0038] Figure 26 This shows an example of a timeline chart.

[0039] Figure 27 An example of a daily chart is shown, obtained by summing the number of pulses during exposure and the number of pulses during non-exposure separately.

[0040] Figure 28 Another example of a daily chart is shown, obtained by summing the number of pulses during exposure and the number of pulses during non-exposure separately.

[0041] Figure 29This is a block diagram that roughly illustrates the function of the timeline chart display device in Embodiment 5.

[0042] Figure 30 This is a flowchart illustrating an example of the main flow of the timeline chart display device in Embodiment 5.

[0043] Figure 31 This is an example of a chart displayed by the timeline chart display device of Embodiment 5.

[0044] Figure 32 This is a display example of a chart generated based on data from non-exposure conditions only.

[0045] Figure 33 This is an example of a chart that displays data from both the unexposed and exposed states, as well as a chart showing only the unexposed state data. Detailed Implementation

[0046] -Table of contents-

[0047] 1. Overview of the comparative laser device management system

[0048] 1.1 Structure

[0049] 1.2 Actions

[0050] 1.2.1 Energy Control of Laser Device

[0051] 1.2.2 Spectral Control of Laser Devices

[0052] 1.2.3 Beam Measurement and Control of Laser Device

[0053] 1.2.4 Gas Control for Laser Devices

[0054] 1.3 Examples of exposure operations performed by the exposure device

[0055] 1.4 Examples of chip data collection control

[0056] 1.5 Description of the comparative semiconductor manufacturing system

[0057] 1.5.1 Structure

[0058] 1.5.2 Actions

[0059] 1.6 Other

[0060] 1.7 Topic

[0061] 2. Implementation Method 1

[0062] 2.1 Structure

[0063] 2.2 Actions

[0064] 2.3 Example of a table containing exposure / non-exposure information

[0065] 2.4 Functions / Effects

[0066] 2.5 Variation Example

[0067] 3. Implementation Method 2

[0068] 3.1 Structure

[0069] 3.2 Actions

[0070] 3.3 Example of displaying a timeline chart

[0071] 3.4 Functions / Effects

[0072] 4. Implementation Method 3

[0073] 4.1 Structure

[0074] 4.2 Actions

[0075] 4.3 Functions / Effects

[0076] 5. Implementation Method 4

[0077] 5.1 Structure

[0078] 5.2 Actions

[0079] 5.3 Functions / Effects

[0080] 6. Implementation Method 5

[0081] 6.1 Structure

[0082] 6.2 Actions

[0083] 6.3 Examples of displaying timeline charts and chip mapping charts

[0084] 6.4 Example of displaying a chart generated using data from non-exposure mode

[0085] 6.5 Functions / Effects

[0086] 7. Regarding laser oscillation during non-exposure conditions

[0087] 8. Other

[0088] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. The embodiments described below illustrate several examples of this disclosure and do not limit its scope. Furthermore, the structures and operations described in each embodiment are not necessarily all necessary for the structures and operations of this disclosure. Additionally, the same reference numerals are used to denote the same structural elements, and repeated descriptions are omitted.

[0089] 1. Overview of the comparative laser device management system

[0090] 1.1 Structure

[0091] Figure 1 A structural example of a comparative example laser device management system is shown schematically. The comparative examples disclosed herein are embodiments known only to the applicant and are not publicly known examples acknowledged by the applicant. In the following comparative examples and embodiments, laser device 1 is shown as an example of a device for supplying pulsed light to exposure device 4, but the invention is not limited to this example. The device for supplying pulsed light to exposure device 4 may, for example, be an EUV light source device that generates extreme ultraviolet (EUV) light. In this specification, the device for supplying pulsed light to exposure device 4 is defined as a light source device.

[0092] In this specification, the optical path axis of the laser is the Z-direction. Two directions approximately orthogonal to the Z-direction can be designated as the H-direction and the V-direction. The H-direction is... Figure 1 The paper surfaces are roughly orthogonal in direction.

[0093] The laser device management system 100 is applied to the semiconductor manufacturing system 300 to collect data on various parameters of the laser device 1 and manage the performance of the laser device 1. The laser device management system 100 includes the laser device 1 and an information processing unit 110. The laser device 1 is a light source that outputs pulsed laser Lp as pulsed light. The laser device 1 performs laser oscillation and outputs pulsed laser Lp towards the exposure unit 4.

[0094] The information processing device 110 includes a processor and a storage unit. The processor collects various data from multiple devices, including the laser device 1 and the exposure device 4, and performs data processing such as data organization and analysis. Furthermore, the term "analysis" includes the concept of "analysis." The storage unit is constructed using a computer-readable medium such as semiconductor memory. The information processing device 110 can be, for example, a terminal device such as a personal computer (PC) operated by the manufacturer of the laser device 1, i.e., the laser manufacturer. Alternatively, the information processing device 110 can be a server connected to multiple devices, including the laser device 1, via a network.

[0095] Laser device 1 is a narrowband gas laser device, comprising a laser cavity 20, a narrowband module (LNM) 10, an output coupling mirror (OC) 35, a spectral width variable unit 60, a monitor module (MM) 30, and a beam meter (BPM) 40. Furthermore, laser device 1 includes a charger 90, a laser gas supply device 91, a laser gas exhaust device 92, a laser control unit 2, an energy control unit 6, a spectral control unit 7, a beam meter control unit 8, a gas control unit 9, and a wafer data collection control unit 3.

[0096] Laser cavity 20 includes windows 21 and 22, a pair of electrodes 23 and 24, an electrical insulating component 25, a crossflow fan (CFF) 26, a motor 27, and a pulsed power module (PPM) 28. The electrical insulating component 25 may be, for example, alumina ceramic. The motor 27 is the power source for the crossflow fan 26. The pulsed power module 28 includes a switch 29 and a charging capacitor (not shown), and is connected to electrode 23 via a feed channel of the electrical insulating component 25. Electrode 24 is connected to the grounded laser cavity 20.

[0097] The narrowband module 10 and the output coupling mirror 35 constitute an optical resonator. The laser cavity 20 is configured such that a pair of electrodes 23 and 24 are arranged in the optical path of the resonator as discharge regions. The output coupling mirror 35 is coated with a multilayer film that reflects a portion of the laser light generated within the laser cavity 20, while allowing another portion to pass through.

[0098] The narrowband module 10 includes a grating 11, a prism 12, and a rotating stage 14 for rotating the prism 12. The prism 12 is configured such that the beam of laser light output from the laser cavity 20 is amplified by the prism 12 and incident on the grating 11 at a predetermined angle.

[0099] The rotating stage 14 is configured such that the incident angle of the beam relative to the grating 11 changes as the prism 12 rotates. The grating 11 is configured in a Littlero configuration so that the incident angle and the diffraction angle of the beam are the same.

[0100] The charger 90 receives charging voltage data Dv from the energy control unit 6 and charges the charging capacitor of the pulse power module 28. A signal line is provided between the energy control unit 6 and the charger 90 to send the charging voltage data Dv, representing the charging voltage V, to the charger 90. The charging voltage V is the voltage used to charge the charging capacitor. The charging voltage V is controlled based on the pulse energy E measured by the pulse energy meter 33.

[0101] A signal line is provided between the laser control unit 2 and the energy control unit 6 to transmit data of the target pulse energy Et used for energy control to the energy control unit 6. Furthermore, a signal line is provided between the laser control unit 2 and the energy control unit 6 to transmit a light emission trigger signal Str to the energy control unit 6.

[0102] A signal line is provided between the laser control unit 2 and the spectrum control unit 7 to send data of the target wavelength λt and the target spectral linewidth Δλt used for spectrum control to the spectrum control unit 7.

[0103] A signal line is provided between the laser control unit 2 and the beam meter 40 to send the light emission trigger signal Str to the beam meter 40.

[0104] A signal line is provided between the laser control unit 2 and the motor 27 of the laser cavity 20 to send speed data Dω, which is used to control the speed ω of the crossflow fan 26, to the motor 27.

[0105] The laser control unit 2 includes a storage unit 51. Various data are stored in the storage unit 51. The laser control unit 2 is communicatively connected to the exposure device control unit 5 of the exposure device 4. The exposure device control unit 5 controls the operation of the exposure device 4. The emission trigger signal Str output from the exposure device control unit 5 is input to the laser control unit 2. The emission trigger signal Str is input to the energy control unit 6 via the laser control unit 2. The energy control unit 6 and the pulse power module 28 are electrically connected so that the switch 29 is turned on / off synchronously with the emission trigger signal Str.

[0106] The monitor module 30 includes beam splitters 31 and 32, a pulse energy meter 33, and a spectrum meter 34. Beam splitter 31 is positioned in the optical path of the pulsed laser Lp output from the output coupling mirror 35, and is configured such that the reflected light from beam splitter 31 is incident on beam splitter 32. Beam splitter 32 is positioned in the optical path of the pulsed laser Lp reflected by beam splitter 31. Beam splitter 32 is configured such that the reflected light from beam splitter 32 is incident on the pulse energy meter 33, and the transmitted light from beam splitter 32 is incident on the spectrum meter 34.

[0107] The pulse energy meter 33 includes a condenser lens (not shown) and a light sensor. The light sensor is a photodiode with a high-speed response and resistance to ultraviolet light.

[0108] The energy control unit 6 sends charging voltage data Dv to the charger 90 based on the pulse energy detected by the pulse energy meter 33, and controls the charging voltage of the charging capacitor of the pulse power module 28. Signal lines are provided between the energy control unit 6 and the laser control unit 2, and between the energy control unit 6 and the wafer data collection control unit 3, to send energy control correlation data Deg based on the measurement results of the pulse energy meter 33 to the laser control unit 2 and the wafer data collection control unit 3.

[0109] The spectrometer 34 is a spectrometer that includes an etalon (not shown) and an image sensor. The spectrometer 34 may be, for example, a monitor etalon spectrometer that includes a monitor etalon, a condenser lens, and an image sensor, configured to measure interference fringes transmitted through the monitor etalon and generated by the condenser lens on the focal plane by the image sensor.

[0110] The spectrum control unit 7 controls the rotary stage 14 of the narrowband module 10 based on the wavelength detected by the spectrometer 34. A signal line is provided between the spectrum control unit 7 and the rotary stage 14 of the narrowband module 10 to send a stage angle control signal Sθ to the rotary stage 14. The stage angle θ of the rotary stage 14 is controlled based on the wavelength λ detected by the spectrometer 34.

[0111] The variable spectral width section 60 is disposed in the optical path between the laser cavity 20 and the output coupling mirror 35. The variable spectral width section 60 includes a cylindrical concave lens 61, a cylindrical convex lens 62, and a linear stage 63. As a variation of the variable spectral width section 60, it can also have the following structure: one surface of the cylindrical convex lens 62, located furthest from the laser cavity 20, is a plane coated with a partial reflective film and also functions as an output coupling mirror. In this case, the output coupling mirror 35 is not disposed.

[0112] A concave cylindrical lens 61 and a convex cylindrical lens 62 are positioned in the optical path between the laser cavity 20 and the output coupling mirror 35. The lens spacing between the concave cylindrical lens 61 and the convex cylindrical lens 62 can be changed by means of a linear stage 63.

[0113] A signal line is provided between the spectrum control unit 7 and the linear stage 63 to send a stage position control signal for controlling the stage position of the linear stage 63 to the linear stage 63.

[0114] Furthermore, signal lines are provided between the spectrum control unit 7 and the laser control unit 2, and between the spectrum control unit 7 and the wafer data collection control unit 3, to send spectrum control correlation data Dλc based on the measurement results of the spectrum meter 34 to the laser control unit 2 and the wafer data collection control unit 3.

[0115] The beam meter 40 includes a polarimeter 41, a beam pointing meter 42, a beam profiler 43, and a beam splitter 44. The beam splitter 44 is positioned in the optical path of the pulsed laser Lp output from the output coupling mirror 35. The reflected light from the beam splitter 44 is guided to the polarimeter 41, the beam pointing meter 42, and the beam profiler 43, respectively.

[0116] Polarimeter 41 measures the degree of polarization of the laser. Beam pointing meter 42 measures the beam pointing of the laser. Beam profiler 43 measures the beam profile of the laser.

[0117] The beam measurement and control unit 8 calculates beam measurement correlation data Db based on image data and other data measured by the beam meter 40. Signal lines for transmitting the beam measurement correlation data Db to the laser control unit 2 and the wafer data collection and control unit 3 are provided between the beam measurement and control unit 8 and the laser control unit 2, and between the beam measurement and control unit 8 and the wafer data collection and control unit 3.

[0118] The laser gas supply device 91 is configured to supply a buffer gas and a fluorine-containing gas as laser gases to the laser cavity 20, respectively, based on a control signal from the gas control unit 9. The buffer gas is, for example, an Ar+Ne mixture. The fluorine-containing gas is, for example, an Ar+Ne+F2 mixture. The laser gas supply device 91 is connected to a gas cylinder 93 supplying the Ar+Ne mixture as a buffer gas and a gas cylinder 94 supplying the Ar+Ne+F2 mixture as a fluorine-containing gas. The laser gas supply device 91 includes a valve for controlling the supply of the Ar+Ne mixture from the gas cylinder 93 and a valve for controlling the supply of the Ar+Ne+F2 mixture from the gas cylinder 94.

[0119] A signal line is provided between the gas control unit 9 and the laser control unit 2 to send gas control associated data Dgs to the laser control unit 2.

[0120] The laser gas exhaust device 92 is configured to exhaust laser gas from the laser cavity 20 according to a control signal from the gas control unit 9. The laser gas exhaust device 92 includes a valve for controlling the exhaust, an exhaust pump, and a halogen filter for capturing F2 gas in the exhaust gas.

[0121] The wafer data acquisition control unit 3 is connected to the laser control unit 2 and collects data of various parameters via the laser control unit 2. The wafer data acquisition control unit 3 includes a storage unit 52. The storage unit 52 is constructed using a computer-readable medium such as a semiconductor memory. In the storage unit 52, data of various parameters are stored for each wafer, each scan, and each pulse. The wafer data acquisition control unit 3 is connected to the information processing device 110. The information processing device 110 can reference the data stored in the storage unit 52. The information processing device 110 can retrieve the data stored in the storage unit 52 from the wafer data acquisition control unit 3.

[0122] The wafer data acquisition control unit 3 is configured to receive the light emission trigger signal Str from the exposure apparatus control unit 5 via the laser control unit 2, and measure the trigger time interval, thereby enabling the identification of wafer exposure-related information in the exposure apparatus 4. The wafer exposure-related information includes the wafer number #w as wafer identification information, the scan number #s as scan identification information, and the pulse number #p as pulse identification information. The wafer number #w corresponds to the wafer identification information (wafer ID). It can also be understood that the wafer number is equivalent to the wafer ID. The scan number serves as information for determining the location of the scanned area within the wafer.

[0123] The wafer data collection and control unit 3 is configured to perform calculations that associate data of various parameters obtained by the laser control unit 2 with wafer exposure correlation information, and store this data in the storage unit 52. That is, the wafer data collection and control unit 3 associates the wafer exposure correlation information in the exposure apparatus 4 with the laser control correlation information in the laser apparatus 1, organizes the data, and stores it in the storage unit 52. The term "association" is synonymous with "linking." The data associated with the wafer exposure correlation information is the data obtained during the exposure when pulsed light irradiates the wafer. The term "during exposure" includes the concept of the exposure period (during exposure).

[0124] The wafer data collection control unit 3 functions as a dedicated data buffer for data collection, gathering and maintaining data for each wafer, each scan, and each pulse. The laser control-related information associated with the wafer exposure-related information includes at least one of various control-related data such as energy control-related data Deg, spectral control-related data Dλc, gas control-related data Dgs, and beam measurement-related data Db.

[0125] The wafer data collection control unit 3 can also collect data related to the status of the laser device 1 during non-exposure periods, other than during wafer exposure. The term "non-exposure period" includes the concept of a non-exposure time (during non-exposure). Furthermore, the data retention period in the storage unit 52 can be set and changed from the information processing device 110. A signal line is provided between the information processing device 110 and the wafer data collection control unit 3 to send setting signals, such as those for the data retention period in the storage unit 52, to the wafer data collection control unit 3.

[0126] A signal line is provided between the exposure apparatus control unit 5 and the laser control unit 2 to transmit data containing wafer exposure-related information, including wafer number #w, scan number #s, and pulse number #p, to the laser control unit 2. A signal line is provided between the laser control unit 2 and the wafer data collection control unit 3 for the wafer data collection control unit 3 to receive wafer exposure-related information via the laser control unit 2.

[0127] A signal line is provided between the gas control unit 9 and the wafer data collection control unit 3 to send gas control associated data Dgs to the wafer data collection control unit 3.

[0128] The laser control unit 2 is connected to the wafer data acquisition control unit 3, energy control unit 6, spectrum control unit 7, beam measurement control unit 8, gas control unit 9, and exposure apparatus control unit 5 in a communicative manner. The exposure apparatus control unit 5 is a processor that controls the exposure apparatus 4.

[0129] Regarding the laser control unit 2, the wafer data acquisition control unit 3, the energy control unit 6, the spectrum control unit 7, the beam measurement control unit 8, the gas control unit 9, the exposure apparatus control unit 5, and other control units, each is configured using at least one processor. For example, these control units can be implemented using a combination of hardware and software of a computer containing a processor. Software is synonymous with program. A computer is configured to include a CPU (Central Processing Unit) and memory. A CPU is an example of a processor. Programmable controllers are included in the concept of a computer.

[0130] In addition, some of the computer's processing functions can also be implemented using integrated circuits such as FPGA (Field Programmable Gate Array) and ASIC (Application Specific Integrated Circuit).

[0131] Furthermore, it is possible to implement the functions of multiple control units using a single computer. Moreover, in this disclosure, devices including processors can be interconnected via communication networks such as local area networks (LANs) or the Internet. In a distributed computing environment, program units can also be stored in both local and remote memory storage devices.

[0132] 1.2 Actions

[0133] 1.2.1 Energy Control of Laser Device

[0134] The laser control unit 2 receives various target data and emission trigger signals Str from the exposure device control unit 5. Target data includes, for example, the target pulse energy Et, the target wavelength λt, and the target spectral linewidth Δλt.

[0135] The laser control unit 2 sends the target pulse energy Et and the emission trigger signal Str to the energy control unit 6. The energy control unit 6 sends the charging voltage data Dv to the charger 90 and synchronously sends an ON signal to the switch 29 of the pulse power module 28 along with the emission trigger signal Str. A high voltage is applied between the electrodes 23 and 24 from the pulse power module 28, thereby causing the laser gas insulation in the laser cavity 20 to break down and discharge. As a result, the laser gas is excited and oscillates through the optical resonator composed of the narrowband module 10 and the output coupling mirror 35.

[0136] A portion of the pulsed laser Lp output from the output coupling mirror 35 is sampled by beam splitters 31 and 32 and incident on the pulse energy meter 33.

[0137] The pulse energy meter 33 measures the pulse energy E of the pulsed laser Lp output from the laser device 1.

[0138] The energy control unit 6 calculates the charging voltage V for the next pulse based on the difference ΔE between the pulse energy E and the target pulse energy Et, and sends the charging voltage data Dv to the charger 90. As a result, the pulse energy E of the pulsed laser Lp output from the laser device 1 is close to the target pulse energy Et.

[0139] The energy control associated data Deg is sent from the energy control unit 6 to the laser control unit 2 and the wafer data collection control unit 3. The energy control associated data Deg includes, for example, data such as the target pulse energy Et, the measured pulse energy E, and the charging voltage V.

[0140] 1.2.2 Spectral Control of Laser Devices

[0141] The laser control unit 2 sends the target wavelength λt, the target spectral linewidth Δλt, and the emission trigger signal Str to the spectrum control unit 7.

[0142] A portion of the pulsed laser beam Lp output from the output coupling mirror 35 is sampled by beam splitters 31 and 32 and incident on the spectrometer 34. The spectrometer 34 measures the wavelength λ and spectral linewidth Δλ of the pulsed laser Lp.

[0143] The spectrum control unit 7 sends a signal to control the rotation angle θ of the rotary stage 14 of the narrowband module 10 to make δλ approach 0, based on the difference δλ between the wavelength λ measured by the spectrum meter 34 and the target wavelength λt. As a result, the wavelength of the pulsed laser Lp output from the laser device 1 approaches the target wavelength λt.

[0144] Furthermore, the spectral control unit 7 sends a signal to control the linear stage 63 of the spectral width variable unit 60 to bring ΔΔλ close to 0, based on the difference ΔΔλ between the measured spectral linewidth Δλ and the target spectral linewidth Δλt. As a result, the spectral linewidth Δλ of the output pulsed laser Lp approaches the target spectral linewidth Δλt.

[0145] The spectral control correlation data Dλc is transmitted from the spectral control unit 7 to the laser control unit 2 and the wafer data collection control unit 3. The spectral control correlation data Dλc includes, for example, data of at least one of the following parameters: target wavelength λt, measured wavelength λ, and spectral linewidth Δλ. Preferably, it includes data of multiple parameters.

[0146] 1.2.3 Beam Measurement and Control of Laser Device

[0147] The beam measurement control unit 8 analyzes the image data obtained from the image sensors of the polarimeter 41, the beam pointing meter 42, and the beam profiler 43, and calculates beam measurement correlation data Db. The beam measurement correlation data Db includes, for example, data on at least one parameter among beam size, beam position, beam divergence, beam pointing, and degree of polarization. Preferably, it includes data on multiple parameters. The beam measurement correlation data Db is transmitted from the beam measurement control unit 8 to the laser control unit 2 and the wafer data collection control unit 3.

[0148] 1.2.4 Gas Control for Laser Devices

[0149] The laser control unit 2 sends gas control parameter data to the gas control unit 9. Gas control parameters include, for example, charging voltage V, maximum charging voltage Vmax, and minimum charging voltage Vmin.

[0150] The gas control unit 9 performs gas pressure control. This gas pressure control utilizes the following gas control method: When the laser gas pressure increases, the insulation breakdown voltage rises, and the pulse energy of the output pulsed laser Lp increases. Conversely, when the laser gas pressure decreases, the insulation breakdown voltage decreases, and the pulse energy of the output pulsed laser Lp decreases.

[0151] The gas control unit 9 uses a pressure sensor 95 to measure the gas pressure (cavity pressure) P inside the laser cavity 20. The cavity pressure P data is sent to the laser control unit 2. When the charging voltage V is above Vmax, the gas control unit 9 controls the laser gas supply device 91 to supply Ar+Ne mixed gas, thereby increasing the laser gas pressure by ΔP. Conversely, when the charging voltage V is below Vmin, the gas control unit 9 controls the laser gas exhaust device 92 to exhaust the Ar+Ne mixed gas, thereby decreasing the laser gas pressure by ΔP.

[0152] In addition, the gas control unit 9 performs partial gas replacement control. Partial gas replacement control is, for example, as follows: injecting a predetermined amount of Ar+Ne mixed gas and Ar+Ne+F2 mixed gas at regular intervals, and venting the exhaust gas based on the total amount of injected gas. The gas control unit 9 replenishes the amount of fluorine lost due to discharge, performing partial gas replacement of the laser gas within the laser cavity 20.

[0153] Gas control associated data Dgs is sent from the gas control unit 9 to the laser control unit 2 and the wafer data collection control unit 3. The gas control associated data Dgs includes, for example, data such as the cavity pressure P.

[0154] The laser control unit 2 periodically, for example at certain time intervals or after a certain number of emissions, saves various data to the storage unit 51. The various data mentioned here include, for example, at least one of energy control correlation data Deg, spectrum control correlation data Dλc, gas control correlation data Dgs, and beam measurement correlation data Db.

[0155] 1.3 Examples of exposure operations performed by the exposure device

[0156] Exposure apparatus 4 is an apparatus for performing wafer exposure. Wafer exposure includes scanning exposure. "Scanning exposure" refers to a method of exposing the exposure area of ​​the wafer while scanning with a pulsed laser Lp. Laser apparatus 1 operates in burst mode corresponding to wafer exposure in exposure apparatus 4. "Burst mode" refers to operation in which the burst period of the narrow-band pulsed laser Lp continuously oscillates, corresponding to scanning exposure, and the oscillation rest period. Here, before describing the structure of the laser apparatus management system 100, an overview of burst mode and wafer exposure will be given.

[0157] Figure 2 This schematically illustrates an example of the timing of the output of a pulsed laser Lp by the laser device 1 through a sudden operation. Figure 3 The outline of the scanning exposure is shown schematically.

[0158] exist Figure 2 In the image, one vertical line represents one pulse of the pulsed laser Lp. (For example...) Figure 2 As shown, the laser device 1 initially performs adjustment oscillation, and after a specified time interval, performs a burst operation for exposing the first wafer (wafer #1).

[0159] Adjustment oscillation refers to the oscillation of a pulsed laser Lp used for adjustment, even though the laser pulses Lp do not directly irradiate the wafer. Adjustment oscillation is performed under specified conditions until the laser stabilizes at an exposure-ready state; this adjustment oscillation is implemented before each batch of wafer production. The pulsed laser Lp is output at a specified frequency, for example, in the range of several hundred to several kHz. During wafer exposure, burst operations are generally performed during repeated bursts and oscillation pauses. Burst operations are also performed during adjustment oscillation.

[0160] exist Figure 2 In this context, the pulse-dense region refers to the burst period of a continuously output pulsed laser Lp over a specified period. Furthermore, in... Figure 2In this process, the intervals where no pulses are present are the oscillation rest periods. Furthermore, during the adjustment oscillation, the length of each continuous output period of the pulse does not need to be constant; for adjustment purposes, the lengths of each continuous output period can be made different to achieve continuous output operation. After the adjustment oscillation is performed, the first wafer (wafer #1) is exposed in the exposure device 4 after a relatively large time interval.

[0161] like Figure 3 As shown, the wafer is divided into multiple defined exposure areas, and each exposure area is scanned and exposed during the period between the start (wafer start) and end (wafer end) of wafer exposure, thereby performing wafer exposure. Specifically, during wafer exposure, the following steps are repeatedly performed: a first defined exposure area of ​​the wafer is exposed with a first scan exposure (scan #1), followed by a second defined exposure area being exposed with a second scan exposure (scan #2). During one scan exposure, multiple pulsed lasers Lp (pulse #1, pulse #2, ...) can be continuously output from the laser device 1. After the scan exposure (scan #1) of the first defined exposure area is completed, the scan exposure (scan #2) of the second defined exposure area is performed at predetermined time intervals. This scan exposure is repeated sequentially. After the scan exposure of all exposure areas of the first wafer is completed, an adjustment oscillation is performed again, and then the wafer exposure of the second wafer (wafer #2) is performed.

[0162] according to Figure 3 The step scan exposure is performed in the order of the dashed arrows shown, until the wafer starts → scan #1 → scan #2 → ... → scan #126 → wafer ends.

[0163] The wafer data collection control unit 3 receives the wafer number, scan number, and... from the exposure apparatus control unit 5. Figure 2 The emission trigger signal Str of this exposure mode is shown. The trigger time interval is measured, thereby identifying the wafer number and scan number of each pulse.

[0164] 1.4 Examples of chip data collection control

[0165] Figure 4 This is a flowchart illustrating an example of the process by which the chip data collection control unit 3 controls the writing of data to the storage unit of the information processing device 110. Figure 5 and Figure 6 An example of data stored in the storage unit of the information processing device 110 is shown in a simplified manner.

[0166] Chip Data Collection and Control Unit 3 Detection Figure 2 The beginning of the burst period for each wafer exposure is shown. The beginning of the burst period is detected by determining whether the beginning of the scan is detected (step S101).

[0167] For example, the wafer data collection control unit 3 can also receive the initial scan number (scan #1) from the exposure apparatus control unit 5 via the laser control unit 2, thereby detecting the start of the scan. In addition, the wafer data collection control unit 3 can also measure the oscillation rest period and detect the start pulse after an oscillation rest period of more than a specified period, such as more than 0.1s, thereby detecting the start of the burst period.

[0168] If the chip data collection control unit 3 determines that no scan start has been detected (if the determination result of step S101 is "no"), it repeatedly performs the processing of step S101.

[0169] On the other hand, if it is determined that the start of a scan has been detected (if the determination result of step S101 is "yes"), the wafer data collection control unit 3 then reads the wafer number #w, scan number #s and pulse number #p received from the exposure device control unit 5 via the laser control unit 2 (step S102).

[0170] Next, the wafer data acquisition control unit 3 performs at least one of the processes in steps S103 to S106. The wafer data acquisition control unit 3 collects and analyzes beam measurement correlation data Db as step S103. The wafer data acquisition control unit 3 collects and analyzes energy control correlation data Deg as step S104. The wafer data acquisition control unit 3 collects and analyzes spectral control correlation data Dλc as step S105. The wafer data acquisition control unit 3 collects and analyzes gas control correlation data Dgs as step S106.

[0171] Next, the wafer data collection control unit 3 determines whether the end of the scan has been detected (step S107). For example, the wafer data collection control unit 3 can detect the end of the scan when it no longer sends a valid scan number from the exposure apparatus control unit 5. In addition, the wafer data collection control unit 3 can also measure the oscillation rest period, and detect the end of the burst period, i.e., the end of the scan, by detecting an oscillation rest period of more than a specified period, such as more than 0.1s.

[0172] If it is determined that the end of the scan has not been detected (if the determination result of step S107 is "no"), the processing of steps S103 to S107 is repeated.

[0173] On the other hand, when the chip data collection control unit 3 determines that the end of the scan has been detected (if the determination result of step S107 is "yes"), it writes the collected and parsed data into the storage unit of the information processing device 110 (step S108).

[0174] Next, the chip data collection control unit 3 determines whether to stop data collection (step S109). If the chip data collection control unit 3 determines that data collection should not be stopped (if the determination result of step S109 is "No"), it returns to the processing of step S101. On the other hand, if the chip data collection control unit 3 determines that data collection should be stopped (if the determination result of step S109 is "Yes"), it ends the data collection process.

[0175] Figure 5 and Figure 6 An example of data written into the storage unit of the information processing device 110 is shown in general. The data collected and analyzed by the wafer data collection and control unit 3 includes the wafer number #w, scan number #s, and pulse number #p. The data collected and analyzed by the wafer data collection and control unit 3 includes beam measurement correlation data Db, energy control correlation data Deg, spectrum control correlation data Dλc, and gas control correlation data Dgs for each pulse.

[0176] like Figure 5 and Figure 6 As shown, for example, beam measurement correlation data Db, energy control correlation data Deg, spectrum control correlation data Dλc, and gas control correlation data Dgs are written into the storage unit of the information processing device 110 in association with the wafer number #w, scan number #s, and pulse number #p.

[0177] 1.5 Description of the comparative semiconductor manufacturing system

[0178] 1.5.1 Structure

[0179] Figure 7 A schematic structural example of a comparative semiconductor manufacturing system 300 is shown. The semiconductor manufacturing system 300 includes a laser device 1, an exposure device 4, and an information processing device 110. The information processing device 110 is configured to receive data from the laser device 1 and the exposure device 4 for each wafer and each scan. The information processing device 110 includes a storage unit (not shown). The information processing device 110 is connected to a display (not shown).

[0180] 1.5.2 Actions

[0181] Information processing device 110 according to Figure 4 The flowchart describes how laser data is received from laser device 1 for each wafer and each scan, and the received laser data is stored in the storage unit. The laser data includes, for example, pulse counts, pulse energy E, charging voltage V, wavelength λ, spectral linewidth Δλ, and cavity pressure P for each wafer and each scan.

[0182] The information processing device 110 can acquire various data via the wafer data collection and control unit 3 of the laser device 1. In addition, the information processing device 110 can directly acquire data from the exposure device 4, etc., without going through the wafer data collection and control unit 3.

[0183] The information processing device 110 receives exposure condition data from the exposure device 4 for each wafer and each scan, and stores the received data in the storage unit. The exposure condition data includes, for example, the exposure pulse energy and the focus position Zf (height position of the wafer surface) in the height direction of the wafer.

[0184] Furthermore, the information processing device 110 can also receive measurement result data for each wafer and each scan (not shown) from the wafer inspection device, and store the received data in the storage unit. The measurement result data obtained from the wafer inspection device includes, for example, the number of defects, the height distribution of the wafer surface, and the line width distribution of the pattern.

[0185] Furthermore, the information processing device 110 can also receive manufacturing condition data for each wafer and each scan from other manufacturing apparatuses (not shown), and store the received data in a storage unit. These "other manufacturing apparatuses" may include, for example, apparatuses for coating photoresist on wafers or CVD (Chemical Vapor Deposition) apparatuses for forming thin films. The thickness of the photoresist and the film can also be measured in these other manufacturing apparatuses, and data on the thickness of the photoresist and the film for each wafer and each scan can be collected.

[0186] Figure 8 This is a flowchart illustrating an example of the main process flow performed by the information processing device 110. Figure 8 The processing shown in the flowchart is achieved by the processor constituting the information processing device 110 executing program commands.

[0187] In step S201, the information processing device 110 determines whether the exposure of the wafer has ended. If the exposure of the wafer has not ended (if the determination result of step S201 is "no"), the information processing device 110 repeatedly performs step S201.

[0188] After the wafer exposure is completed, the information processing device 110 proceeds to step S202. In step S202, the information processing device 110 collects data for each wafer and each scan from each device. The information processing device 110 collects laser data for each wafer and each scan from the laser device 1, and collects process-related data from the exposure device 4. Details of step S202 can be found using... Figure 9 To be described later.

[0189] In step S203, following step S202, the information processing device 110 performs a process of depicting the data of each parameter obtained from each device into a wafer shape. That is, the information processing device 110 depicts the parameter data into a wafer shape using information related to the scanning position and the size of the exposure area for the wafer, based on the collected information. Details of step S203 are provided below. Figure 10 To be described later.

[0190] Then, the information processing device 110 performs a process of image-based visualization and displaying the data from each wafer and each scan from each device (step S204). The wafer-shaped mapping drawn in step S203 is visualized for easy management, display, and analysis. After step S204, the process ends. Figure 8 The flowchart.

[0191] Figure 9 It shows that it is applied to Figure 8 The flowchart shows an example of a subprocess of step S202 in the flowchart. First, the information processing device 110 collects laser data for each wafer and each scan from the laser device 1 (step S211). The laser data collected by the information processing device 110 in step S211 includes data for each wafer and each scan, such as beam measurement correlation data Db, energy control correlation data Deg, spectrum control correlation data Dλc, and gas control correlation data Dgs.

[0192] Next, the information processing device 110 collects exposure condition data for each wafer and each scan from the exposure device 4 (step S212). The exposure condition data includes, for example, the target pulse energy Et, the target wavelength λt, the target spectral linewidth Δλt, the exposure pulse energy Pex measured by the exposure device 4, and the focus position Zf in the height direction of the wafer. Furthermore, the processing order of steps S211 and S212 can be interchanged.

[0193] Figure 9 Although not shown in the diagram, based on steps S211 and S212, the information processing device 110 may also collect inspection data for each wafer and each scan from the wafer inspection device. Furthermore, the information processing device 110 may also collect manufacturing data for each wafer and each scan from other manufacturing devices.

[0194] After performing data collection including steps S211 and S212, the information processing device 110 terminates the process. Figure 9 The flowchart, return Figure 8 The main process.

[0195] Figure 10 It shows that it is applied to Figure 8The flowchart is an example of a subprocess for step S203 in the flowchart.

[0196] In step S221, the information processing device 110 depicts the data of the na parameters from the laser device 1 into a wafer shape, and respectively images Ab1, Ab2, ..., Ab... are generated. na Stored in the storage department.

[0197] Next, in step S222, the information processing device 110 depicts the data of nb parameters from the exposure device 4 into a wafer shape, and respectively images Bb1, Bb2, ..., Bb... nb Stored in the storage department.

[0198] When the information processing apparatus 110 obtains data from the wafer inspection apparatus and other manufacturing apparatuses, it also performs steps S223 and S224. Specifically, in step S223, the information processing apparatus 110 depicts the nc parameters from the wafer inspection apparatus into a wafer shape, and respectively images Cb1, Cb2, ..., Cb... nc Stored in the storage department.

[0199] Next, in step S224, the information processing device 110 depicts the data of the nd parameters from other manufacturing devices into a wafer shape, and respectively visualizes the resulting images Db1, Db2, ..., Db... nd Stored in the storage department.

[0200] After step S224, the information processing device 110 ends. Figure 10 The flowchart, return Figure 8 The main process. Additionally... Figure 10 The order of processing steps S221 to S224 can be changed.

[0201] The information processing device 110 visualizes data for each of the multiple parameters collected from multiple devices within a defined region unit on the wafer, thereby generating multiple mapped images of each parameter from the multiple devices. Here, the defined region can be the exposure area (scanning area) where the exposure device 4 performs one scan exposure. Alternatively, the defined region can be a region that is further subdivided by dividing the scanning exposure area.

[0202] Information processing device 110, for example, generates a mapped image that uses light and dark to represent the differences in data related to each parameter. In this case, information processing device 110 can also make the target value of each parameter the median value of the light and dark.

[0203] Figure 11An example of a mapped image is shown in outline. Figure 11 A mapped image is, for example, an image in which the data of any one parameter obtained during the exposure of the first wafer (wafer #1) is depicted as a wafer.

[0204] Figure 12 This is a flowchart illustrating another example of the main flow of processing performed by the information processing device 110. The information processing device 110 can replace... Figure 8 The flowchart shown or Figure 8 Implemented based on the main process Figure 12 The flowchart shown. Regarding... Figure 8 The differences will be explained.

[0205] Figure 12 The flowchart shown replaces Figure 8 Step S204 includes step S205. In step S205, the information processing device 110 performs digital image filtering processing on each mapped image obtained in step S203 to generate each processed image. For example, a median filter or an averaging filter can be used as the digital image filter.

[0206] By performing digital filtering on each mapped image, the characteristics of each parameter are captured.

[0207] The processed image generated in step S205 is stored in the storage device of the information processing apparatus 110. Furthermore, the processed image can be displayed on the display of the information processing apparatus 110.

[0208] 1.6 Other

[0209] exist Figure 1 The structural example shown is an ArF excimer laser, but it is not limited to this example; for example, it can also be applied to KrF, XeCl, XeF, and other excimer lasers. Regarding the laser gas, a specified amount of a mixture of rare gas and buffer gas, or a mixture of rare gas, buffer gas, and halogen gas, can be injected into the laser cavity 20 to generate the laser gas.

[0210] In addition, Figure 1 The example shown is a single-cavity laser device 1, but it is not limited to this example. For example, it could also be a laser device that includes an amplifier with another laser cavity and an optical resonator arranged in the optical path between the output coupling mirror 35 and the monitor module 30.

[0211] 1.7 Topic

[0212] In the exposure process of semiconductor manufacturing, there is a demand for improved quality and precision. To improve quality, it is necessary to repeatedly collect, analyze, and feed back various data from multiple devices that make up the semiconductor manufacturing system to the manufacturing process.

[0213] The laser device 1 cannot distinguish whether the light emission trigger signal Str received from the exposure device control unit 5 is a light emission command for wafer exposure or a light emission command for adjustment oscillation other than wafer exposure. Therefore, based solely on data of parameters related to the performance of the laser device 1, it is difficult to determine whether the laser oscillation is an oscillation during wafer exposure or an oscillation during non-exposure such as adjustment oscillation, and it is difficult to accurately grasp the correlation between the parameters of laser oscillation during exposure or non-exposure and wafer quality.

[0214] The comparative example information processing device 110 is configured to analyze data of various parameters during wafer exposure in order to understand the correlation between parameters during laser oscillation and wafer quality. On the other hand, although data on parameters during non-exposure periods, such as adjusting oscillation, are collected in the laser device 1, no data analysis or other utilization is planned, and the data is not organized and not fully utilized.

[0215] like Figure 5 and Figure 6 As explained, in the comparative example laser device management system 100, only the data from wafer exposure is linked to wafer exposure-related information such as wafer number for processing. Regarding Figure 5 and Figure 6 The data not shown in the diagram, taken during non-exposure periods, is only stored and not processed as data to be analyzed.

[0216] The comparative example's information processing device 110 only extracts data during wafer exposure and can only analyze the laser performance during exposure. Therefore, it is difficult to perform detailed analysis based on the differences between exposure and non-exposure times. The laser performance data during exposure reflects the process control based on the exposure apparatus 4 and includes process-dependent factors. Therefore, it is effective in correlation analysis with wafer quality, but it may not be suitable for monitoring the time-dependent degradation of the laser apparatus 1. That is, the data during exposure varies depending on the wafer's exposure conditions, making it difficult to compare and evaluate the performance of the laser apparatus 1 itself based on the data during exposure, considering factors such as time-dependent degradation.

[0217] In contrast, the data related to parameters during non-exposure includes data obtained under specific conditions that are independent of the wafer's exposure conditions. Therefore, it is expected that by organizing and analyzing the data during non-exposure, the performance of the laser device 1, which is independent of the manufacturing process, can be evaluated.

[0218] Furthermore, as another topic, this involves data that includes exposure-time data and non-exposure-time data accumulated over time regarding a certain parameter, such as... Figure 13 In that case, when simply displaying timeline charts, it is impossible to clearly distinguish between periods of exposure and periods of non-exposure on the chart, and it is impossible to know whether the data is from the exposure period or the non-exposure period.

[0219] Figure 13 This is an example of a timeline graph displaying the parameters of the laser device 1 obtained by the information processing unit 110. The horizontal axis represents time, and the vertical axis represents the value of each parameter. Here, an example is shown, illustrating the timeline of the data for four parameters: the spectral linewidth at E95, the cavity pressure of the oscillator, the cavity pressure of the amplifier, and the charging voltage of the amplifier. E95 refers to the spectral width at which 95% of the energy in the laser spectrum is concentrated.

[0220] Information processing device 110 can process data of various parameters obtained in a time series, enabling... Figure 13 The timeline chart shown is displayed on the monitor. About Figure 13 Such charts show that data during chip exposure and data during non-exposure periods, such as oscillation adjustments, are presented together in a unified chart, making it difficult to determine whether a parameter value at a given moment is a value during exposure or a value during non-exposure.

[0221] 2. Implementation Method 1

[0222] Next, the semiconductor manufacturing system 310 of Embodiment 1 will be described. Furthermore, in the following description, parts that are substantially the same as the structural elements of the semiconductor manufacturing system 300 of the comparative example will be labeled with the same reference numerals and their descriptions will be omitted as appropriate.

[0223] 2.1 Structure

[0224] Figure 14 A schematic structural example of a semiconductor manufacturing system 310 including a chart display device 200 according to Embodiment 1 is shown. The semiconductor manufacturing system 310 includes the chart display device 200 instead of the information processing device 110 of the comparative example. The chart display device 200 can be a terminal device such as a personal computer, or a server connected to a network. The chart display device 200 is an information processing device having the following functions: a communication function, receiving data related to each parameter from the laser device 1 and the exposure device 4; a data processing function, processing the received data; and a display function, displaying information such as the data processing results. The chart display device 200 is an example of an "information processing device" in this disclosure.

[0225] The chart display device 200 includes a communication interface 201, a processor 202, a computer-readable medium 204, an input device 206, and a display 208. The processor 202 includes a CPU. In addition to the CPU, the processor 202 may also include one or more electronic circuits such as an ASIC or FPGA. The processor 202 is connected to the communication interface 201, the computer-readable medium 204, the input device 206, and the display 208 via a bus 209.

[0226] Computer-readable medium 204 includes memory as primary storage and storage as secondary storage. Computer-readable medium 204 may be, for example, semiconductor memory, a hard disk drive (HDD) device, a solid-state drive (SSD) device, or a combination thereof. A program executed by processor 202 is stored in computer-readable medium 204. Computer-readable medium 204 is an example of a "storage device" in this disclosure.

[0227] The chart display device 200 is configured to connect to the laser device 1 and the exposure device 4 via a communication interface 201, and receive various data from the laser device 1 and the exposure device 4 for each wafer, each scan, and each pulse. The chart display device 200 can also receive data transmitted from the exposure device 4 via the laser device 1.

[0228] Figure 15 This is a block diagram that roughly illustrates the functions of the chart display device 200. The chart display device 200 includes a data collection unit 211, a chart generation unit 212, a chart selection unit 214, a display unit 215, and a data storage unit 217.

[0229] The data collection unit 211 acquires data on each parameter of the object to be analyzed from multiple devices, including the laser device 1, the exposure device 4, the wafer inspection device, and other manufacturing devices. The data collection unit 211 includes a communication interface 201 that receives data from the multiple devices, including the laser device 1 and the exposure device 4. The data collection unit 211 may also be configured to automatically acquire data on each parameter from the multiple devices according to program commands.

[0230] The data collection unit 211 collects not only the exposure data for each wafer and each scan, but also the laser oscillation data during non-exposure periods, such as oscillation adjustment and break-in. It links the time data indicating the moment each data point is generated with the data for each parameter.

[0231] The wafer data collection control unit 3 of the laser device 1 accumulates data for each parameter in a time sequence, along with the time data, in pulse units or scan units. The data collection unit 211 acquires data from the wafer data collection control unit 3. The data collection unit 211 may also include part or all of the processing functions of the wafer data collection control unit 3.

[0232] The data collection unit 211 can arrange the data in chronological order according to the time data, and perform data organization and management. The data collection unit 211 performs the following processing: based on the time data and process data obtained from the exposure device 4, it classifies each record of data associated with the same time data into data that is exposed or data that is not exposed, and associates the attribute information corresponding to the classification, namely the wafer number and scan number as exposure information or non-exposure information, with the record respectively. Part or all of this process of linking exposure / non-exposure information can also be implemented in the chart generation unit 212.

[0233] Furthermore, when there is a time difference between the built-in clock of the exposure device 4 and the built-in clock of the laser device 1, the time data can be offset according to the time difference based on the time of either one, thereby making the time consistent.

[0234] The chart generation unit 212 processes the collected data to generate various charts. These charts can take various forms, such as line graphs, wafer-like mapped images, and tabular lists. Some or all of the processing functions of the data collection unit 211 and the chart generation unit 212 are implemented by the processor 202 executing program commands.

[0235] The data storage unit 217 stores data acquired via the data collection unit 211 and data from charts generated by the chart generation unit 212. The data storage unit 217 is a non-temporary storage area of ​​a tangible computer-readable medium 204. The data storage unit 217 includes multiple storage units A, B, C, and D. Storage unit A stores mapped images generated based on parameters of laser data obtained from the laser device 1, and processed images obtained by digital image filtering of the mapped images. Storage unit B stores mapped images generated based on parameters of exposure condition data obtained from the exposure device 4, and processed images obtained by digital image filtering of the mapped images.

[0236] Storage unit C is a storage area for storing mapped images generated based on parameters from the wafer inspection apparatus and processed images obtained by performing digital image filtering on the mapped images. Storage unit D is a storage area for storing mapped images generated based on parameters from other manufacturing equipment and processed images obtained by performing digital image filtering on the mapped images.

[0237] The chart selection unit 214 accepts user operations to select a desired chart from a plurality of charts generated by the chart generation unit 212. The chart selection unit 214 is configured, for example, as an input device 206 including at least one of a keyboard, mouse, touch panel, digitizer, and voice input device. The chart selection unit 214 accepts user operations and selects the chart to be displayed according to the user's input instructions.

[0238] Display unit 215 displays information about the chart selected by chart selection unit 214. Display unit 215 may also display, for example, correlation values ​​between parameters and mapped images. Display unit 215 includes display 208. Display unit 215 is not limited to display 208, but may also be a projector. Display unit 215 may be configured as a display device including at least one of a liquid crystal display, an organic EL display, and a projector.

[0239] 2.2 Actions

[0240] The chart display device 200 receives laser data for each wafer, each scan, and non-exposure laser data from the laser device 1, and stores the laser data in the data storage unit 217. The laser data includes pulse count, pulse energy, charging voltage, wavelength, spectral linewidth, cavity pressure, etc. for each wafer and each scan.

[0241] The chart display device 200 receives exposure condition data and exposure / non-exposure information from the exposure device 4 and stores this data in the data storage unit 217. Exposure condition data includes, for example, exposure pulse energy and focus position Zf. Exposure / non-exposure information indicates whether the wafer is being exposed or not. Information on the start and end times of exposure for each wafer can be used to determine whether it is being exposed or not (non-exposure).

[0242] Exposure / non-exposure information can include exposure information indicating exposure and non-exposure information indicating non-exposure. For example, the wafer number and scan number of the wafer to be exposed can be used as exposure information. Furthermore, information indicating oscillation adjustment can be used as non-exposure information. The chart display device 200 can obtain exposure / non-exposure information directly from the exposure device 4, or via the laser device 1.

[0243] Users can select the data of the object to be displayed in a chart from the data of various parameters collected by the chart display device 200. The chart generation unit 212 of the chart display device 200 reads the data that matches the selected data from the data storage unit 217 and generates a chart. The chart generation unit 212 can also generate multiple charts of different types. The chart generated by the chart generation unit 212 is displayed on the display unit 215.

[0244] Figure 16 This is a flowchart illustrating an example of the main process flow of the graph display device 200 in Embodiment 1. Figure 16 The processing shown in the flowchart is achieved by the processor 202, which constitutes the chart display device 200, executing program commands.

[0245] In step S301, the chart display device 200 determines whether a certain period of time has elapsed since the start of wafer production. If the determination result of step S301 is "no", the chart display device 200 repeats step S301.

[0246] If, after a certain period of time has elapsed since the start of wafer production, the determination result of step S301 becomes "yes," the graph display device 200 proceeds to step S302, collecting data for each wafer, each scan, and each pulse from both the laser device 1 and the exposure device 4. Thus, the graph display device 200 collects data from the laser device 1 and the exposure device 4 at regular intervals after the start of wafer production. Details of step S302 can be found using... Figure 17 To be described later.

[0247] Next, in step S304, the graph display device 200 sets the wafer number, scan number, and pulse number or non-exposure information for each parameter based on the wafer information obtained from the exposure device 4. The wafer number can be a wafer ID used to identify each wafer. Details of step S304 are available using... Figure 18 This will be described later. The data associated with the wafer ID, scan number, and pulse number represents the data from the wafer exposure process.

[0248] The wafer ID, scan number, and pulse number can be used to represent exposure information during wafer exposure. Data settings for non-exposure periods represent non-exposure information. Each data point can be assigned either exposure information or non-exposure information.

[0249] Next, in step S305, the chart display device 200 generates a chart that integrates the various data and exposure / non-exposure information. For example, the chart display device 200 generates a table as follows: For the dataset (data record) that summarizes the data of each parameter obtained according to each pulse, exposure / non-exposure information is added to clearly distinguish whether the data is from the exposure period or the non-exposure period, thus organizing the data. Details of step S305 are provided below. Figure 19 To be described later.

[0250] Next, in step S308, the chart display device 200 displays the generated chart. The chart displayed in step S308 can be a data list organized into a table, or a graph created by plotting or visualizing part or all of the data from the table.

[0251] After step S308, the process ends. Figure 16 The flowchart is shown. Furthermore, it can be repeatedly implemented during the operation of the semiconductor manufacturing system 310. Figure 16 The flowchart.

[0252] Figure 17 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S302 in the flowchart.

[0253] In step S312, the graph display device 200 collects information related to wafer production from the exposure device 4. This information includes, for example, data such as wafer number, scan number, and exposure conditions.

[0254] Next, in step S314, the graph display device 200 collects data from the laser device 1 for each scan and each pulse.

[0255] Next, in step S316, the chart display device 200 multiplies the information obtained from the exposure device 4 and the laser device 1, and adds attribute information indicating which wafer was exposed or not exposed (information during non-exposure) to the information of each scan and each pulse. That is, the chart display device 200 mainly uses the information of the exposure start time, exposure end time, and the produced wafer ID to associate attribute information indicating which wafer was exposed or not exposed (information during non-exposure) with the information of each scan and each pulse. Attribute information can also be called classification information.

[0256] After step S316, the chart display device 200 ends. Figure 17 The flowchart, return Figure 16 The main process.

[0257] Figure 18 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S304 in the flowchart.

[0258] In step S321, the chart display device 200 obtains process information such as the exposure start time, exposure end time, and number of scans for each wafer ID from the exposure device 4.

[0259] Next, in step S322, the graph display device 200 roughly searches for the scan number and pulse number between the exposure start time and the exposure end time from the record of the data of each parameter obtained according to each pulse.

[0260] Next, in step S323, the graph display device 200 obtains information on the model (type) of the exposure device 4.

[0261] In step S324, the graph display device 200 acquires data for each scan and each pulse of the laser device 1.

[0262] In step S325, the chart display device 200 identifies the characteristics of the oscillation mode based on the oscillation frequency, duty cycle, and rest time during scanning. Furthermore, the chart display device 200 can also identify the characteristics of the oscillation mode during adjustment oscillation and break-in based on the oscillation frequency, duty cycle, and rest time during non-scanning (non-exposure) periods.

[0263] Next, in step S326, the graph display device 200 compares the oscillation modes of each model of the pre-accumulated exposure device 4 within the device with the oscillation modes obtained from the laser device 1 to determine the boundary of whether or not the wafer is oscillating.

[0264] After step S326, the chart display device 200 ends. Figure 18 The flowchart, return Figure 16 The main process.

[0265] Figure 19 It shows that it is applied to Figure 16 The flowchart is an example of a subprocess for step S305 in the flowchart.

[0266] In step S331, the chart display device 200 accumulates data for each chip, data for each scan, and data for each pulse in a time sequence.

[0267] Next, in step S332, the chart display device 200 associates the data associated with the wafer with the data for each wafer. The data for each wafer may be, for example, the wafer ID or the average data for each wafer.

[0268] Next, in step S333, the graph display device 200 associates information indicating whether it is in exposure, data associated with scanning, and data from each scan. Data from each scan may include, for example, laser energy, E95 data, etc. If the corresponding data is in exposure, the wafer ID, which is data associated with the scan, is associated with it. If the data is not in exposure, attribute information indicating properties such as "adjusting oscillation" or "break-in" is associated with it.

[0269] Next, in step S334, the graph display device 200 associates the data associated with the scan with the data for each pulse. The data for each pulse may be, for example, the energy of the laser, E95 data, etc.

[0270] After step S334, the chart display device 200 ends. Figure 19 The flowchart, return Figure 16 The main process.

[0271] Figures 16-19 The flowchart shown is an example of an information processing method executed by the processor 202.

[0272] 2.3 Example of a table containing exposure / non-exposure information

[0273] Figure 20 An example of a table containing exposure / non-exposure information generated by the chart display device 200 is shown. Data on various parameters collected in the chart display device 200 are linked to time data, enabling the time data to be recorded in a time-series order using the time data as a key. For example... Figure 20 As shown, the data for each wafer, each scan, and each pulse is arranged in time sequence. The time data can be time data expressed based on a standard time for a specific region. Alternatively, the time data can be time data expressing the time difference from any arbitrary point in time. Figure 20 The time data in the table shown is generated by using any one of these benchmarks as a common benchmark.

[0274] The chart display device 200 generates a record that summarizes data related to multiple parameters associated with the same time data, classifies each record into data at the time of exposure or data at the time of non-exposure, and associates the exposure / non-exposure information corresponding to the classification.

[0275] Chart display device 200 arranges charts in time sequence through implementation Figure 13 The data collected is based on the flowchart described. Therefore, as... Figure 20In this way, the chart display device 200 generates a table displaying data for each wafer, each scan, and each pulse. At this time, in the case of data on the wafer (during exposure), the wafer number is associated; however, in the case of data not on the wafer (during non-exposure), no wafer number is assigned, and instead, attribute information indicating that it is data from a non-exposure period is attached. Here, an example is shown where information indicating "adjustment oscillation" is assigned as attribute information indicating data from a non-exposure period. Adjustment oscillation can be further subdivided into multiple categories, and attribute information such as Adjustment Oscillation 1, Adjustment Oscillation 2, and Adjustment Oscillation 3 can be used to represent these categories. Furthermore, in addition to "adjustment oscillation," information such as "break-in" can also be used as attribute information indicating data from a non-exposure period.

[0276] The wafer number is used as attribute information to represent data during exposure. At least one of the wafer number, scan number, and pulse number can be used as attribute information to represent data during exposure. Figure 20 The table shown can be displayed as a table on the display unit 215 of the chart display device 200. Furthermore, the chart display device 200 can also display a chart in tabular form from... Figure 20 Extract some parameter data from the table shown and generate a chart.

[0277] 2.4 Functions / Effects

[0278] According to the chart display device 200 of Embodiment 1, each collected parameter data is assigned attribute information representing exposure / non-exposure classification, and the data is organized by clearly distinguishing between data during exposure and data during non-exposure. Therefore, it is possible to clearly distinguish between data during exposure and data during non-exposure for chart display.

[0279] Furthermore, according to the chart display device 200 of Embodiment 1, it is possible to extract only the data during non-exposure from the collected data, analyze the data, or display the analysis results of the data during non-exposure. According to the chart display device 200, it is possible to distinguish between data related to pulsed light directly used in wafer production (data during exposure) and data related to pulsed light not directly used in wafer production, such as adjusting oscillations (data during non-exposure), analyze each type of data, and perform comparisons between the two, as well as generate analytical information from new perspectives.

[0280] 2.5 Variation Example

[0281] The chart display device 200 can also be configured to connect to multiple laser devices via a network, collect data from the multiple laser devices, and manage the performance of each laser device.

[0282] 3. Implementation Method 2

[0283] 3.1 Structure

[0284] Figure 21 The structure of the semiconductor manufacturing system 312 including the timeline chart display device 220 in Embodiment 2 is shown in outline. Differences from Embodiment 1 will be explained.

[0285] The semiconductor manufacturing system 312 of embodiment 2 replaces Figure 14 The chart display device 200 includes a timeline chart display device 220. The hardware structure of the timeline chart display device 220 can be the same as that of the chart display device 200 in Embodiment 1.

[0286] The timeline chart display device 220 can be a terminal device such as a personal computer, or a server connected to a network. The timeline chart display device 220 is an information processing device that has communication functions for receiving various types of data, data processing functions for processing the received data, and display functions for displaying information such as the processing results of the data. The timeline chart display device 220 is an example of an "information processing device" in this disclosure.

[0287] The timeline chart display device 220 is configured to receive laser data and exposure conditions, exposure / non-exposure information, etc., from the laser device 1 and the exposure device 4 for each wafer, each scan, and each pulse.

[0288] The timeline chart display device 220 can obtain exposure / non-exposure information directly from the exposure device 4, or via the wafer data collection and control unit 3 of the laser device 1. Furthermore, regarding the exposure / non-exposure information, based on the identification of oscillation patterns and time data derived from the analysis of the trigger time interval of the light emission trigger signal, the data is categorized into periods during exposure and periods during non-exposure. Attribute information, representing labels corresponding to the categorization results, is then generated.

[0289] Figure 22 This is a block diagram that roughly illustrates the function of the timeline chart display device 220. The timeline chart display device 220 replaces... Figure 15 The chart generation unit 212 has a chart generation unit 212B. The chart generation unit 212B is implemented by the processor executing program commands.

[0290] The chart generation unit 212B has the processing functions of the chart generation unit 212. Furthermore, the chart generation unit 212B generates a timeline chart that includes exposure / non-exposure information. The chart generation unit 212B can generate charts that selectively add and display data based on other parameters, based on the timeline chart.

[0291] The chart generation unit 212B can also generate multiple timeline charts of various types.

[0292] 3.2 Actions

[0293] Figure 23 This is a flowchart illustrating an example of the main process flow performed by the timeline chart display device 220 in Embodiment 2. (Regarding...) Figure 16 The differences between the flowcharts will be explained. Figure 23 The flowchart is replaced Figure 16 Step S305 includes step S306.

[0294] In step S306, the timeline chart display device 220 generates a timeline chart that integrates all data and exposure / non-exposure information. Then, the timeline chart display device 220 displays the generated timeline chart (step S308).

[0295] Figure 24 It shows that it is applied to Figure 23 The flowchart is an example of a subprocess for step S306 in the flowchart.

[0296] In step S341, the timeline chart display device 220 acquires the exposure start time and exposure end time of the image in which the parameters are depicted as a wafer.

[0297] Next, in step S342, the timeline chart display device 220 uses the timeline chart to highlight the time between the exposure start time and the exposure end time.

[0298] Then, in step S343, the timeline chart display device 220 generates display data for displaying an image that is depicted as a crystal as a parameter of the object in the highlighted area.

[0299] After step S343, the timeline chart display device 220 ends. Figure 24 The flowchart, return Figure 23 The main process.

[0300] Figure 25 It shows that it is applied to Figure 23 The flowchart is an example of a subprocess for step S308 in the flowchart.

[0301] In step S351, the timeline chart display device 220 selects the type of chart to be displayed. Types of charts include, for example, timeline charts, bar charts, and wafer mapping charts. A wafer mapping chart refers to a mapped image depicting a wafer or a processed image obtained by filtering a mapped image. The user can specify one or more desired chart types from a variety of chart types by operating the input device 206. The timeline chart display device 220 accepts user input selecting the chart type.

[0302] In step S352, the timeline graph display device 220 selects the target device (exposure device 4 or laser device 1). The user can input the model number of the exposure device 4 or the laser device 1 via the operation input device 206. The timeline graph display device 220 accepts user input regarding the selected device.

[0303] Next, in step S353, the timeline chart display device 220 selects data as the display object. The user can input information specifying the data to be displayed by operating the input device 206. The timeline chart display device 220 accepts user input selecting data as the object. The data as the object can be, for example, the pulses used in exposure, the average E95 of each wafer, etc.

[0304] Next, in step S354, the timeline chart display device 220 sets the period and totaling conditions for the data to be used. The totaling conditions can be preset by a program or appropriately set by the user input device 206. The timeline chart display device 220 accepts user input specifying the period and totaling conditions.

[0305] In step S356, the timeline chart display device 220 displays a chart on the display unit 215 that matches the selection criteria. The processor of the timeline chart display device 220 performs display control to make the display unit 215 display the chart.

[0306] After step S356, the timeline chart display device 220 ends. Figure 25 The flowchart, return Figure 23 The main process.

[0307] 3.3 Example of displaying a timeline chart

[0308] Figure 26 This shows an example of a timeline chart. Figure 26 The timeline chart shown is an example of a "timeline chart" in this disclosure. Figure 26 The horizontal and vertical axes in the middle are Figure 13 Same. According to the timeline chart display device 220 of Embodiment 2, such as Figure 26In this way, the timeline chart clearly displays information indicating "whether it is a wafer exposure time". Here, the exposure period (wafer exposure period) distinguished by the start and end times of each wafer exposure is highlighted, and then, the wafer ID information of the wafer that determines the exposure target is displayed as character information in the area corresponding to the highlighted exposure period.

[0309] in addition, Figure 26 Although not shown in the text, a mapping image, which depicts the data related to the specified parameters as a crystal, can be further displayed in the highlighted area.

[0310] In addition, for the area corresponding to the non-exposure period, different highlighting based on different display colors can be performed to distinguish it from the highlighting display during the wafer exposure period, i.e., color separation display.

[0311] 3.4 Functions / Effects

[0312] According to the timeline chart display device 220 of Embodiment 2, the exposure period of each wafer is highlighted in the timeline chart display, and wafer ID information is overlaid on the display. This makes it easy to identify which wafer's production process caused the parameter change. Furthermore, it makes it easy to distinguish between parameter changes during exposure and parameter changes outside of exposure (non-exposure time). Therefore, parameters undergoing adjustments outside of exposure time can be identified based on parameter changes outside of exposure time.

[0313] 4. Implementation Method 3

[0314] 4.1 Structure

[0315] The hardware structure of the chart display device in Embodiment 3 is the same as that in Embodiment 1.

[0316] 4.2 Actions

[0317] The chart display device in Implementation 3 uses the collected data to collect data for each exposure and each non-exposure period. The chart display device generates a chart that aggregates the data for each exposure and each non-exposure period.

[0318] If used Figure 20 As explained, exposure / non-exposure information, which is attribute information indicating exposure / non-exposure, is added to the records of the data of each parameter obtained from devices such as laser device 1 and exposure device 4. Therefore, it is easy to generate charts that separately summarize the data of exposure with the added exposure information and the data of non-exposure with the added non-exposure information.

[0319] Figure 27An example of a daily chart is shown, obtained by summing the number of pulses during exposure and the number of pulses without exposure, respectively. The horizontal axis represents the date, and the vertical axis represents the number of pulses per day. The unit is megapults (Mpls). According to the chart display device of Embodiment 3, such as... Figure 27 As shown, the number of pulses during exposure and the number of pulses during non-exposure can be analyzed separately, and the display unit 215 can display the analysis results. Figure 27 The daily chart shown is an example of a "daily chart" in this disclosure.

[0320] 4.3 Functions / Effects

[0321] According to the chart display device of Embodiment 3, by summing the data during exposure, it is possible to collect only the parameters used in wafer production. This allows for an accurate understanding of the degree to which these parameters affect wafer production. Furthermore, the data during non-exposure periods is independent of the wafer production process; therefore, by analyzing only the non-exposure data, it is helpful to accurately understand the time-related degradation of the laser device 1.

[0322] 5. Implementation Method 4

[0323] 5.1 Structure

[0324] The hardware structure of the chart display device in Embodiment 4 is the same as that in Embodiment 1.

[0325] 5.2 Actions

[0326] The chart display device in Embodiment 4 uses the collected data to sum the data for each exposure and each non-exposure period. The chart display device generates a chart summed up for each exposure and each non-exposure period.

[0327] Figure 28 Another example of a daily chart is shown, obtained by summing the number of pulses during exposure and the number of pulses during non-exposure separately. The horizontal axis represents the date, and the vertical axis represents the cumulative number of pulses. According to the chart display device of Embodiment 4, such as... Figure 28 As shown, the cumulative pulse count during exposure, the cumulative pulse count during non-exposure, and the total cumulative pulse count during and without exposure can be plotted and displayed simultaneously on the display unit 215. Figure 28 The daily chart shown is an example of a "daily chart" in this disclosure.

[0328] 5.3 Functions / Effects

[0329] According to the chart display device of embodiment 4, the cumulative pulse count of pulses used in production and pulses used in adjustments outside of production can be accurately measured.

[0330] 6. Implementation Method 5

[0331] 6.1 Structure

[0332] The hardware structure of the timeline chart display device 250 in Embodiment 5 can be the same as that of the chart display device 200 in Embodiment 1.

[0333] Figure 29 This is a block diagram that schematically illustrates the function of the timeline chart display device 250 in Embodiment 5. (Regarding...) Figure 14 The differences will be explained.

[0334] The timeline chart display device 250 replaces the chart generation unit 212 with a chart generation unit 212C. The chart generation unit 212C has the same processing functions as the chart generation unit 212. Furthermore, the chart generation unit 212C generates a timeline chart that integrates various data and exposure / non-exposure information. The chart generation unit 212C also generates display charts for additionally displaying wafer mapping charts based on other parameters. The chart generation unit 212C can also generate various charts. The chart generation unit 212C is capable of generating charts representing the status of parameters during non-exposure using only data obtained from the adjustment oscillation during non-exposure.

[0335] 6.2 Actions

[0336] Figure 30 This is a flowchart illustrating an example of the main flow of the timeline chart display device 250. (Regarding...) Figure 23 The differences between the flowcharts will be explained. Figure 30 The flowchart in Figure 23 Step S307 is included between steps S306 and S308.

[0337] In step S307, the timeline chart display device 250 generates a wafer mapping chart based on each data point. A wafer mapping chart refers to... Figure 8 The "drawing data into a wafer-like image" described in step S203 or Figure 12 The diagram in step S205 describes the processing of the image in the form of a graph.

[0338] Furthermore, the timeline chart display device 250 is able to extract only the data obtained from the adjustment oscillation during non-exposure from the collected data set, and generate a chart using only the data from the adjustment oscillation.

[0339] The timeline chart display device 250 causes the display 208 to show the generated chart (step S308).

[0340] 6.3 Examples of displaying timeline charts and chip mapping charts

[0341] Figure 31This is an example of a chart displayed by the timeline chart display device 250 of Embodiment 5. For example... Figure 31 As shown, the timeline chart and the chip mapping chart are displayed together (simultaneously) on display 208. Figure 31 Timeline charts and Figure 26 Similarly, to clearly differentiate between the exposure period and the non-exposure period of the wafer, the area during the exposure period is highlighted and appended with the corresponding wafer ID information. Furthermore, in Figure 31 The example also includes a chart showing data related to the test launch (unexposed), generated solely from data from the unexposed period. The test launch incorporates the concepts of "oscillation adjustment" and "break-in." Overlayed in the unexposed period area of ​​the timeline chart are character messages indicating the unexposed period during which the "test launch" was performed.

[0342] Data represented by a timeline can also be displayed as a wafer map. By showing data at the same time after the start of exposure for each wafer, changes in the data on the timeline and changes in the wafer map can be confirmed simultaneously.

[0343] In addition, according to Figure 31 This chart display allows users to select a specific chip mapping chart, thereby enabling the selected chip mapping chart to be displayed in a larger size at the forefront of the screen. Users can select the desired chart from the input device 206.

[0344] Beyond chip-mapped charts, users can also select charts for test launches. This allows for the generation of charts that extract only data from test launches. For example, when a user... Figure 31 When a click or touch operation is performed on the screen displaying such a chart to select the area of ​​"test emission" during the non-exposure period, a chart generated based on the test emission data is displayed on the screen of the display unit 215.

[0345] 6.4 Example of displaying a chart generated using data from non-exposure mode

[0346] Figure 32 This is an example of a chart generated from data only during non-exposure periods. The horizontal axis represents the date (number of days), and the vertical axis represents the chamber pressure and E95. Figure 32 The graph shown on the upper side illustrates the shift in a representative value of the chamber pressure during non-exposure. This representative value could be, for example, a daily average. Figure 32 The lower curve shows the shift of the representative value of E95 during unexposed conditions. According to the timeline graph display device 250, as... Figure 32 As shown, it can extract data from non-exposure time only over a long span and display it in a chart.

[0347] Figure 33 This is an example of a chart that displays data from both the unexposed and exposed states, as well as a chart showing only the unexposed state data. Figure 33 Is Figure 32 The chart shown is obtained by adding data for "non-exposure time + exposure time".

[0348] According to the timeline chart display device 250, such as Figure 33 Such a mixture of data containing both "non-exposure time" and "exposure time" data, as well as data containing only "non-exposure time", allows for extraction and chart display over a longer span.

[0349] 6.5 Functions / Effects

[0350] According to the timeline chart display device 250 of embodiment 5, such as Figure 31 As shown, the chart clearly distinguishes between the exposure period and the non-exposure period and is easy to understand.

[0351] Furthermore, according to the timeline chart display device 250, such as Figure 32 As shown, by extracting data only during non-exposure and displaying charts, the state of laser device 1 can be grasped under the same conditions that do not depend on the wafer production conditions. Therefore, data that helps in lifetime prediction can be obtained.

[0352] On the other hand, such as Figure 33 As shown, when there is a mixture of data during exposure and data during non-exposure, it is possible to grasp the deviation of the data.

[0353] 7. Regarding laser oscillation during non-exposure conditions

[0354] In non-exposure laser oscillation, besides the adjustment oscillation used by exposure device 4, there can also be break-in oscillations and various test oscillations used by laser device 1. Regarding adjustment oscillation, multiple modes are determined according to the model of exposure device 4, and oscillation is performed in multiple modes. Therefore, based on the oscillation mode data of each model, the attributes of adjustment oscillation can be meticulously classified according to each mode, and the attribute information can be associated according to each mode. During adjustment oscillation, laser oscillation is performed with the shutter of laser device 1 (not shown) open.

[0355] Break-in processes can include, for example, passivation operation to demonstrate the performance of laser device 1, or break-in during gas replacement. Break-in conditions can be predetermined based on the model of laser device 1, or can be specified appropriately. Furthermore, regarding break-in, laser oscillation is performed with the shutter of laser device 1 closed.

[0356] It can also correlate non-exposure data with the types of wear-in and test oscillations and their corresponding attribute information.

[0357] 8. Other

[0358] The foregoing description is not a limitation but a simple illustration. Therefore, those skilled in the art will understand that modifications can be made to embodiments of this disclosure without departing from the claims. Furthermore, those skilled in the art will understand the use of embodiments of this disclosure in combination.

[0359] Unless explicitly stated otherwise, all terms used in this specification and claims should be interpreted as "non-limiting." For example, terms such as "comprising" or "including" should be interpreted as "not limited to the parts described as included." Terms such as "having" should be interpreted as "not limited to the parts described as having." Furthermore, the modifier "a" should be interpreted as meaning "at least one" or "one or more." Additionally, terms such as "at least one of A, B, and C" should be interpreted as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." Moreover, it should be interpreted as also including combinations of these and parts other than "A," "B," and "C."

Claims

1. An information processing apparatus having a processor and a storage device, wherein the processor acquires data of each parameter provided from each of a light source apparatus that generates pulsed light and an exposure apparatus that exposes a wafer with the pulsed light output from the light source apparatus by a burst operation, and time point data associated with the data, the processor classifies, according to the acquired data and the time point data, each record of the data associated with the same time point data, whether the data is of an exposure time when the pulsed light is irradiated to the wafer or of a non-exposure time other than the exposure time, and associates attribute information indicating an attribute corresponding to the classification with the record, the processor causes the storage device to store the data and the time point data associated with the attribute information, the processor generates a first graph of the data of the exposure time and a second graph of the data of a first adjustment oscillation time based on a first burst operation and the data of a second adjustment oscillation time based on a second burst operation, using the data read out from the storage device, the processor generates a table in which the records are arranged in time series, according to the time point data, the first graph and the second graph include the same parameter of the parameters.

2. The information processing apparatus according to claim 1, wherein the first graph is a graph in a timeline form, and the second graph is a graph in a daily line form whose span is longer than that of the first graph.

3. The information processing apparatus according to claim 1, wherein the same parameter is a spectral width of 95% of energy concentration in a spectrum of pulsed laser light or a gas pressure in a laser cavity possessed by the light source apparatus.

4. The information processing apparatus according to claim 1, wherein the information processing apparatus further has a display, and the processor causes the graphs to be displayed on the display.

5. The information processing apparatus according to claim 1, wherein the processor generates the records in which data relating to a plurality of parameters are summarized, according to the time point data.

6. The information processing apparatus according to claim 1, wherein the attribute information includes exposure information indicating the data of the exposure time and non-exposure information indicating the data of the non-exposure time, and the processor associates the exposure information or the non-exposure information with each of the records.

7. The information processing apparatus according to claim 6, wherein the data provided from the exposure apparatus includes wafer identification information that identifies the wafer as an exposure object, a scan number that identifies a position of a scan area within the wafer, an exposure start time point and an exposure end time point of each wafer, and data relating to an exposure condition, and the processor uses at least one of a wafer number as the wafer identification information and the scan number as the exposure information.

8. The information processing apparatus according to claim 6, wherein the non-exposure information includes information indicating the data of the adjustment oscillation time.

9. The information processing apparatus according to claim 2, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The timeline-form chart includes a highlight that distinguishes between a period of exposure and a period of non-exposure.

10. The information processing apparatus according to claim 2, wherein The processor superimposes and displays wafer identification information of the wafer that is a determination exposure object in a region of the timeline-form chart corresponding to the period of exposure.

11. The information processing apparatus according to claim 2, wherein The processor generates a wafer-shaped mapping image using the data of the exposure time for each wafer that is an exposure object, The mapping image is superimposed and displayed in a region of the timeline-form chart corresponding to the period of exposure.

12. The information processing apparatus according to claim 2, wherein The processor superimposes and displays character information indicating the non-exposure time in a region of the timeline-form chart corresponding to the period of non-exposure.

13. The information processing apparatus according to claim 2, wherein The processor generates a chart relating to a parameter of non-exposure time using only the data of the non-exposure time and the data of the exposure time, The processor superimposes and displays the chart relating to the parameter of non-exposure time in a region of the timeline-form chart corresponding to the period of non-exposure.

14. The information processing apparatus according to claim 2, wherein The line graph is a chart indicating the progress of the number of pulses.

15. The information processing apparatus according to claim 2, wherein The line graph is a chart that distinguishes between the progress of the number of pulses in the exposure time and the progress of the number of pulses in the non-exposure time.

16. The information processing apparatus according to claim 2, wherein The line graph is a chart indicating the progress of the cumulative number of pulses.

17. The information processing apparatus according to claim 1, wherein The information processing apparatus further has a display and an input device, The processor receives input of information that specifies a kind of chart to be displayed on the display, The chart of the specified kind is displayed on the display in accordance with the information input from the input device.

18. An information processing method executed by a processor, wherein The information processing method includes the following steps: The processor acquires data of each parameter provided from a light source apparatus that generates pulsed light and an exposure apparatus that exposes a wafer with the pulsed light output from the light source apparatus in a burst operation, and time data associated with the data, The processor classifies, according to each record of the data associated with the same time data, data of an exposure time when the pulsed light is irradiated to the wafer and data of a non-exposure time other than the exposure time, and associates attribute information indicating an attribute corresponding to the classification with the record, respectively, based on the acquired data and the time data, The processor causes a storage apparatus to store the data and the time data associated with the attribute information, The processor causes a storage apparatus to store the data and the time data associated with the attribute information, the processor generates a first graph of the data at the time of exposure using the data read out from the storage device, and generates a second graph in which data at the time of the first adjustment oscillation based on the first burst operation and data at the time of the second adjustment oscillation based on the second burst operation are combined together, and the processor generates a table in which the records are arranged in time series based on the time data, the first graph and the second graph include the same parameter among the parameters.

19. The information processing method according to claim 18, wherein the first graph is a graph in a timeline form, and the second graph is a graph in a daily line form whose span is longer than that of the first graph.

20. The information processing method according to claim 18, wherein the same parameter is a spectral width of 95% of energy concentration in a spectrum of the pulsed laser or a gas pressure in a laser cavity provided in the light source device.

21. A semiconductor manufacturing system, comprising: a light source device that generates pulsed light; an exposure device that exposes a wafer with the pulsed light output from the light source device; and an information processing device, wherein the information processing device has a processor and a storage device, the processor acquires data of each parameter provided from each of a light source device that generates pulsed light and an exposure device that exposes a wafer with the pulsed light output from the light source device by burst operation, and time data associated with the data, the processor classifies, based on the acquired data and the time data, each record of the data associated with the same time data, whether the data is data at the time of exposure in which the pulsed light is irradiated to the wafer or data at the time of adjustment oscillation in which the time other than the time of exposure, the processor causes the storage device to store the data and the time data associated with the attribute information, the processor generates a first graph of the data at the time of exposure using the data read out from the storage device, and generates a second graph in which data at the time of the first adjustment oscillation based on the first burst operation and data at the time of the second adjustment oscillation based on the second burst operation are combined together, the processor generates a table in which the records are arranged in time series based on the time data, the first graph and the second graph include the same parameter among the parameters.

22. The semiconductor manufacturing system according to claim 21, wherein the first graph is a graph in a timeline form, and the second graph is a graph in a daily line form whose span is longer than that of the first graph.

23. The semiconductor manufacturing system according to claim 21, wherein the same parameter is a spectral width of 95% of energy concentration in a spectrum of the pulsed laser or a gas pressure in a laser cavity provided in the light source device.

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