Method for preparing semiconductor device

Abstract

The present invention proposes a method for preparing a semiconductor device, comprising: B100, adsorbing a SiC substrate on which front components have been prepared to a glass carrier; B200, removing the SOG that seals the SiC substrate and the Si-based carrier, and then removing the Si-based carrier; B300, flipping the SiC substrate, and using PI to seal the SiC substrate and the glass carrier; B400, performing a back coating process on the SiC substrate to form a metal film; B500, cutting the metal film according to a preset cutting track; B600, attaching the SiC substrate after the metal film is cut to a tempered glass through UV glue, and performing a SiC substrate cutting process. When the SiC substrate is transferred from the Si-based carrier to the glass carrier, the present invention first adsorbs and fixes it, and then seals the SiC substrate and the glass carrier through PI. Thus, the convenience of transferring the SiC substrate from the Si-based carrier to the glass carrier is improved. Moreover, the texture is cut out by picosecond laser, and the SiC substrate is cracked by bending the flexible glass, thereby improving the reliability of cutting the thin SiC substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor preparation, and in particular to a method for preparing a semiconductor device. Background Art

[0002] In the process of preparing semiconductor devices, when the object to be processed (such as a wafer) is relatively thin, it is necessary to fix the object to be processed on a carrier for support. In addition, since the process of preparing semiconductor devices is complex, involving many process steps, and the operating environment of each process step is different, there are different requirements for the performance of the carrier. In different processing steps, the semiconductor device needs to be fixed to the corresponding carrier.

[0003] In the prior art, when a semiconductor device is transferred from one carrier to another, the positioning and fixing of the semiconductor device is complicated, which affects the manufacturing efficiency and quality of the semiconductor device. In addition, it is difficult to cut a wafer with high hardness and thin thickness. Summary of the invention

[0004] The technical problem to be solved by the present invention is how to improve the convenience and efficiency of carrier transfer in the preparation of semiconductor devices, and the convenience of cutting semiconductor devices. The present invention provides a method for preparing semiconductor devices.

[0005] A method for preparing a semiconductor device according to an embodiment of the present invention includes:

[0006] B100, adsorbing the SiC substrate with the front components prepared onto the glass carrier;

[0007] B200, after removing the SOG sealing the SiC substrate and the Si-based carrier, remove the Si-based carrier;

[0008] B300, turning over the SiC substrate, and sealing the SiC substrate and the glass carrier with PI;

[0009] B400, performing a back-side coating process on the SiC substrate to form a metal film;

[0010] B500, cutting the metal film according to a preset cutting track;

[0011] B600, after the metal film is cut, the SiC substrate is bonded to the tempered glass using UV glue to perform the SiC substrate cutting process.

[0012] According to the method for preparing a semiconductor device of an embodiment of the present invention, when the SiC substrate is transferred from the Si-based carrier to the glass carrier, it is first fixed by adsorption, and then the SiC substrate and the glass carrier are sealed by PI. Thus, the convenience of transferring the SiC substrate from the Si-based carrier to the glass carrier is improved.

[0013] According to some embodiments of the present invention, in step B500, after the SiC substrate is bonded to the tempered glass, the PI sealing the SiC substrate and the glass carrier is removed, and the glass carrier is removed.

[0014] In some embodiments of the present invention, step B100 includes:

[0015] The SiC substrate is adsorbed onto the glass carrier by using a robot, a suction cup or a vacuum adsorption device.

[0016] According to some embodiments of the present invention, in step B600, when cutting the SiC substrate, the SiC substrate is firstly cut stealthily using a picosecond laser, and then the SiC substrate is cleaved using a cleavage film expansion process.

[0017] In some embodiments of the present invention, the strengthened glass in step B600 is a flexible strengthened glass.

[0018] According to some embodiments of the present invention, the SiC substrate is cleaved by bending the strengthened glass.

[0019] In some embodiments of the present invention, the glass carrier is provided with a plurality of through vent holes at intervals.

[0020] According to some embodiments of the present invention, in step B100, before the SiC substrate is adsorbed onto the glass carrier, liquid is used to pre-fix the SiC substrate and the glass carrier.

[0021] In some embodiments of the present invention, when liquid is used to pre-fix the SiC substrate and the glass carrier, in step B300, when PI is used to seal the SiC substrate and the glass carrier, partial edges of the SiC substrate and the glass carrier are sealed. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A flow chart of a method for preparing a semiconductor device according to an embodiment of the present invention;

[0023] Figure 2 Schematic diagram of a SiC substrate fixed to a glass carrier by adsorption by a robot according to an embodiment of the present invention;

[0024] Figure 3 Schematic diagram of removing SOG and separating SiC substrate and Si-based carrier according to an embodiment of the present invention;

[0025] Figure 4 A schematic diagram of flipping a SiC substrate according to an embodiment of the present invention;

[0026] Figure 5A schematic diagram of sealing a SiC substrate and a glass carrier using PI according to an embodiment of the present invention;

[0027] Figure 6 Schematic diagram of back-side coating of a SiC substrate according to an embodiment of the present invention;

[0028] Figure 7 A schematic diagram of metal film cutting according to an embodiment of the present invention;

[0029] Figure 8 Schematic diagram of fixing a SiC substrate to a tempered glass by UV glue according to an embodiment of the present invention;

[0030] Fig. 9 A schematic diagram of removing PI and a second carrier glass according to an embodiment of the present invention;

[0031] Fig.10 A schematic diagram of flipping a SiC substrate to the front side according to an embodiment of the present invention;

[0032] Fig.11 Schematic diagram of invisible cutting of SiC substrate by picosecond laser according to an embodiment of the present invention;

[0033] Fig.12 Schematic diagram of a SiC substrate cleaved by bending strengthened glass according to an embodiment of the present invention;

[0034] Fig.13 Schematic diagram of cutting a metal coating according to an embodiment of the present invention.

[0035] Reference numerals:

[0036] SiC substrate 10 , metal film 150 , robot 20 , glass carrier 30 , vent hole 310 , Si-based carrier 40 , PI 50 , SOG 60 , strengthened glass 70 , UV glue 80 , laser modified area S1 . DETAILED DESCRIPTION

[0037] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose, the present invention is described in detail below in conjunction with the accompanying drawings and preferred embodiments.

[0038] The description of the method flow in the specification of the present invention and the steps of the flowchart in the drawings of the specification of the present invention do not have to be strictly executed according to the step numbers, and the method steps can be executed in a different order. Moreover, some steps can be omitted, multiple steps can be combined into one step, and / or one step can be decomposed into multiple steps.

[0039] like Figure 1 As shown, a method for preparing a semiconductor device according to an embodiment of the present invention includes:

[0040] B100, such as Figure 2 As shown, the SiC substrate 10 on which the front components are prepared is adsorbed onto the glass carrier 30;

[0041] For example Figure 2 As shown in FIG. 1 , the SiC substrate 10 can be fixed to the glass carrier 30 by adsorption by a robot 20 , or by adsorption by a suction cup or other vacuum adsorption equipment.

[0042] B200, such as Figure 3 As shown, after removing the SOG 60 between the SiC substrate 10 and the Si-based carrier 40 , the Si-based carrier 40 is removed;

[0043] B300, such as Figure 4 and Figure 5 As shown, the SiC substrate 10 is turned over, and the SiC substrate 10 and the glass carrier 30 are sealed using PI50;

[0044] B400, such as Figure 6 As shown, the SiC substrate 10 is subjected to a back-side coating process to form a metal film 150;

[0045] B500, such as Figure 7 As shown, the metal film 150 is cut according to a preset cutting track;

[0046] B600, such as Figure 8-Figure 11 As shown, the SiC substrate 10 after the metal film 150 is cut is bonded to the tempered glass 70 by UV adhesive 80, and the SiC substrate 10 cutting process is performed.

[0047] According to the method for preparing a semiconductor device of an embodiment of the present invention, when the SiC substrate 10 is transferred from the Si-based carrier 40 to the glass carrier 30, it is first fixed by adsorption, and then the SiC substrate 10 and the glass carrier 30 are sealed by the PI 50. Thus, the convenience of transferring the SiC substrate 10 from the Si-based carrier 40 to the glass carrier 30 is improved.

[0048] According to some embodiments of the present invention, Figure 8-Figure 13 As shown, in step B500 , after the SiC substrate 10 is bonded to the tempered glass 70 , the PI 50 sealing the SiC substrate 10 and the glass carrier 30 is removed, and the glass carrier 30 is removed.

[0049] In some embodiments of the present invention, Figure 11-13 As shown, when cutting the SiC substrate 10, a picosecond laser is first used to perform invisible cutting on the SiC substrate 10 to cut out a texture, such as Fig.11 and Fig.12As shown, the texture described here can be understood as a laser modified area S1 formed on the SiC substrate 10 by a laser process. Then, the SiC substrate 10 is split from the texture by a split film expansion process. It should be noted that the picosecond laser has a short wavelength and high energy, and can perform invisible cutting on the surface of the SiC substrate 10 with a higher hardness. After the cutting process is completed, the UV glue 80 can be illuminated to unseal the cut SiC substrate 10 and the tempered glass 70.

[0050] According to some embodiments of the present invention, the strengthened glass 70 in step B500 is a flexible strengthened glass 70. The flexible strengthened glass 70 has good support and can be bent, so it can support cutting of a thin SiC substrate 10.

[0051] In some embodiments of the present invention, Fig.12 As shown, by bending the tempered glass 70 , the laser modified region S1 of the SiC substrate 10 is subjected to tensile force and tension, and the SiC substrate 10 is cleaved.

[0052] It should be noted that the SiC substrate 10 has a high hardness, and it is difficult to cut a thin SiC substrate 10. The present invention first uses a picosecond laser to cut a corresponding texture on the SiC substrate 10, and then cleaves the SiC substrate 10 by bending the tempered glass 70 to achieve cutting of the SiC substrate 10.

[0053] According to some embodiments of the present invention, Figure 2 As shown, the glass carrier 30 is provided with a plurality of through vent holes 310 at intervals. Thus, the robot 20 can adsorb the glass carrier 30 and the SiC substrate 10 through the vent holes 310 .

[0054] In some embodiments of the present invention, before the SiC substrate 10 is adsorbed onto the glass carrier 30, liquid is used to pre-fix the SiC substrate 10 and the glass carrier 30. For example, water droplets or a water film may be coated on the surface of the SiC substrate 10, or water droplets or a water film may be coated on the surface of the glass carrier 30, and the SiC substrate 10 and the glass carrier 30 may be pre-fixed by liquid tension to improve the convenience of fixing the SiC substrate 10 and the glass carrier 30.

[0055] According to some embodiments of the present invention, when liquid is used to pre-fix the SiC substrate 10 and the glass carrier 30, in step B300, when PI50 is used to seal the SiC substrate 10 and the glass carrier 30, part of the edges of the SiC substrate 10 and the glass carrier 30 are sealed.

[0056] It should be noted that by sealing part of the edges of the SiC substrate 10 and the glass carrier 30 , a gap can be created between the SiC substrate 10 and the glass carrier 30 to evaporate water droplets or water films, thereby preventing water droplets or water films from accumulating and affecting the performance of the semiconductor device.

[0057] The following is a detailed description of a method for preparing a semiconductor device according to the present invention with reference to the accompanying drawings in a specific embodiment. It is worth noting that the following description is only an exemplary description and should not be construed as a specific limitation on the present invention.

[0058] like Figure 1 As shown, a method for preparing a semiconductor device comprises:

[0059] B100, such as Figure 2 As shown, the SiC substrate 10 with the front components prepared is adsorbed to the glass carrier 30 by the robot 20; the glass carrier 30 is provided with a plurality of through vents 310 at intervals. Thus, the robot 20 can adsorb the glass carrier 30 and the SiC substrate 10 through the vents 310.

[0060] Before the SiC substrate 10 is adsorbed onto the glass carrier 30 by the robot 20, the SiC substrate 10 and the glass carrier 30 may be pre-fixed by liquid. For example, water droplets or a water film may be coated on the surface of the SiC substrate 10, or water droplets or a water film may be coated on the surface of the glass carrier 30, and the SiC substrate 10 and the glass carrier 30 may be pre-fixed by liquid tension to improve the convenience of fixing the SiC substrate 10 and the glass carrier 30.

[0061] B200, such as Figure 3 As shown, after removing the SOG 60 between the SiC substrate 10 and the Si-based carrier 40 , the Si-based carrier 40 is removed;

[0062] B300, such as Figure 4 and Figure 5 As shown, the SiC substrate 10 is turned over, and the SiC substrate 10 and the glass carrier 30 are sealed using PI50;

[0063] When the SiC substrate 10 and the glass carrier 30 are pre-fixed by liquid, in step B300 , when the SiC substrate 10 and the glass carrier 30 are sealed by PI50 , part of the edges of the SiC substrate 10 and the glass carrier 30 are sealed.

[0064] It should be noted that by sealing part of the edges of the SiC substrate 10 and the glass carrier 30 , a gap can be created between the SiC substrate 10 and the glass carrier 30 to evaporate water droplets or water films, thereby preventing water droplets or water films from accumulating and affecting the performance of the semiconductor device.

[0065] B400, such as Figure 6 As shown, metal coating is performed on the back side of the SiC substrate 10;

[0066] B500, such as Figure 7 As shown, the metal film 150 is cut according to a preset cutting track;

[0067] B600, such as Figure 8-Figure 12 As shown, after the SiC substrate 10 after the metal film 150 is cut is bonded to the tempered glass 70 through UV glue 80, the PI 50 sealing the SiC substrate 10 and the glass carrier 30 is removed, the glass carrier 30 is removed, and the SiC substrate 10 is cut.

[0068] like Fig.11 As shown, when cutting the SiC substrate 10, a picosecond laser is first used to cut the texture of the SiC substrate 10, and then a split film expansion process is used to split the SiC substrate 10 from the texture. Among them, the strengthened glass 70 is a flexible strengthened glass 70, such as Fig.12 As shown, SiC substrate 10 is cleaved by bending strengthened glass 70 .

[0069] It should be noted that the SiC substrate 10 has a high hardness, and it is difficult to cut a thin SiC substrate 10. The present invention first uses a picosecond laser to cut a corresponding texture on the SiC substrate 10, and then cleaves the SiC substrate 10 by bending the tempered glass 70 to achieve cutting of the SiC substrate 10.

[0070] In summary, when the SiC substrate 10 is transferred from the Si-based carrier 40 to the glass carrier 30, the present invention uses the robot 20 to fix it by adsorption, and then the SiC substrate 10 and the glass carrier 30 are sealed by the PI50. As a result, the convenience of transferring the SiC substrate 10 from the Si-based carrier 40 to the glass carrier 30 is improved. Moreover, when cutting the SiC substrate 10, the texture is cut out by picosecond laser, and the SiC substrate 10 is cracked by bending the flexible glass, which improves the reliability of cutting the thinner SiC substrate 10.

[0071] Through the description of the specific implementation methods, a deeper and more specific understanding of the technical means and effects adopted by the present invention to achieve the predetermined purpose should be obtained. However, the accompanying drawings are only for reference and illustration purposes and are not intended to limit the present invention.

Claims

1. A method for preparing a semiconductor device, characterized in that: include: B100, adsorbing the SiC substrate with the front components prepared onto the glass carrier; B200, after removing the SOG sealing the SiC substrate and the Si-based carrier, remove the Si-based carrier; B300, turning over the SiC substrate, and sealing the SiC substrate and the glass carrier with PI; B400, performing a back-side coating process on the SiC substrate to form a metal film; B500, cutting the metal film according to a preset cutting track; B600, after the metal film is cut, the SiC substrate is bonded to the tempered glass through UV glue to perform the SiC substrate cutting process; Wherein, in step B500, after the SiC substrate is bonded to the tempered glass, the PI sealing the SiC substrate and the glass carrier is removed, and the glass carrier is removed; Step B100 includes: Adsorbing the SiC substrate onto the glass carrier using a robot, a suction cup or a vacuum adsorption device; In step B600, when cutting the SiC substrate, firstly, the SiC substrate is cut stealthily by using a picosecond laser, and then the SiC substrate is split by using a split film expansion process; The tempered glass in step B600 is a flexible tempered glass; The SiC substrate is cleaved by bending the strengthened glass.

2. The method for preparing a semiconductor device according to claim 1, wherein: The glass carrier plate is provided with a plurality of through vent holes at intervals.

3. The method for preparing a semiconductor device according to claim 1, characterized in that: In step B100, before the SiC substrate is adsorbed onto the glass carrier, the SiC substrate and the glass carrier are pre-fixed with liquid.

4. The method for preparing a semiconductor device according to claim 3, characterized in that: When the SiC substrate and the glass carrier are pre-fixed by liquid, in step B300, when the SiC substrate and the glass carrier are sealed by PI, part of the edges of the SiC substrate and the glass carrier are sealed.

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