Light sensing device

Abstract

The application discloses a light sensing device, which comprises a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel comprises a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer comprises at least one first opening corresponding to the sensing element, and the first light shielding layer overlaps the driving circuit in the top view direction of the light sensing device.

Description

TECHNICAL FIELD

[0001] The present application relates to a light sensing device, in particular, a light sensing device comprising a light shielding layer. BACKGROUND

[0002] In recent years, the technology of integrating light sensor in electronic products has been developed rapidly. For example, the light sensor can be applied in display devices such as smart phones or tablet computers in combination with a light collimator-like structure to be used for fingerprint identification. However, according to the design of the existing light collimator-like structure, stray light or ambient light will affect the operation of the light sensor, resulting in poor signal-to-noise ratio of the light signal. SUMMARY

[0003] One of the purposes of the present application is to provide a light sensing device to solve the problems encountered by the existing light sensing device. Through the design of the light shielding layer, the influence of stray light or ambient light can be reduced, thereby improving the signal-to-noise ratio of the light signal, or the process complexity can be reduced or the adhesion between layers can be improved.

[0004] An embodiment of the present application provides a light sensing device. The light sensing device comprises a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel comprises a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer comprises at least one first opening corresponding to the sensing element, and the first light shielding layer overlaps the driving circuit in the top view direction of the light sensing device. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figure 1 The schematic diagram of the architecture of the light sensing device of an embodiment of the present application.

[0006] Figure 2 The schematic diagram of the circuit architecture of the sensing pixel of the light sensing device of an embodiment of the present application.

[0007] Figure 3 The schematic diagram of the partial cross-section of the light sensing device of the first embodiment of the present application.

[0008] Figure 4 The schematic diagram of the partial cross-section of the light sensing device of the second embodiment of the present application.

[0009] Figure 5 The schematic diagram of the partial cross-section of the light sensing device of the third embodiment of the present application.

[0010] Figure 6 The schematic diagram of the partial cross-section of the light sensing device of the fourth embodiment of the present application.

[0011] Figure 7FIG. 4 is a schematic diagram of a partial cross-section of a light sensing device according to a variation of the fourth embodiment of the present application.

[0012] Figure 8 FIG. 1 is a schematic diagram of a partial cross-section of a light sensing device according to an embodiment of the present application.

[0013] Reference numerals: 100 - substrate layer; 102 - substrate; 104 - buffer layer; 110 - multiplexer; 120 - circuit board; 130 - signal reading element; 200 - circuit layer; 210 - sensing pixel; 212 - sensing circuit; 214 - sensing element; 220 - driving circuit; 220S, 210S1, 210S2 - side; 231 - channel layer; 232 - gate insulating layer; 233 - gate; 234 - first electrode; 235 - second electrode; 236 - dielectric layer; 240, 246, 248, 252, 254, 315, 325 - insulating layer; 242 - electrode layer; 250 - transparent conductive layer; 300 - light collimating structure; 310, 320, 330 - light shielding layer; 312 - first opening; 320a, 320b - edge; 322 - second opening; 332 - third opening; 340 - microlens; 350, 352, 354, 356, 358, 360 - protective layer; D1 - first distance; D2 - second distance; L1 - first extension distance; L2 - second extension distance; R1 - sensing region; R2 - peripheral region; SD - light sensing device; TFT1, TFT2, TFT3, 230 - thin film transistor; Vcc2, Vcc1, Vcc0 - operating voltage; Vout - output voltage; Vrst - reset voltage; Vsel - selection voltage; W1, W2, W3 - width; X - direction; Y - top view direction; Θ - angle. DETAILED DESCRIPTION

[0014] The present application will be described in detail below with reference to specific embodiments and drawings. It should be noted that in order to make the reader easily understand and the drawings simple, only a part of the device is drawn in the drawings of the present application, and the specific elements in the drawings are not drawn according to the actual proportion. In addition, the number and size of each element in the drawings are only for illustration, and are not intended to limit the scope of the present application.

[0015] Certain words are used throughout the description and claims to refer to particular features. Those of skill in the art will understand that electronic devices manufacturers can use different nomenclature to refer to the same or equivalent features. The nomenclature used herein is not intended to limit the scope or meaning of the claims, but is for the purpose of harmonizing the description. The terms "comprising," "including," and / or "having" as used herein are specifically intended to be open-ended and also to mean including, but not limited to. The terms "comprise," "comprising," "include," "including," and / or "have," "having" when used in this specification have the same meaning. The description and claims can refer to "a" or "an" element, which is not used in a limiting sense, meaning "one or more." The key terms are defined as follows:

[0016] When an element or film layer is referred to as being "on" or "connected to" another element or film layer, it can be directly on or connected to the other element or film layer, or intervening elements or film layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there are no intervening elements or film layers present.

[0017] Directional terms as used herein - for example up, down, right, left, front, back, rear, etc. - are made only with reference to the figures as drawn and not intended to imply absolute orientation.

[0018] The use of ordinal terms such as "first," "second," "third," etc., in the description and claims is not meant to limit the number of elements to those numerals. The ordinal terms are used to distinguish between different elements having the same name. The ordinal terms are not meant to imply a sequence or order to the elements in the claims. The use of the ordinal terms in the description is not meant to imply a sequence or order to the elements in the claims.

[0019] The terms "about," "equal," "equivalent," or "same," "substantially," or "approximately" are generally interpreted as within 20% of the given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of the given value or range.

[0020] It is to be understood that features of the various embodiments can be combined, rearranged, and / or adapted in other embodiments without departing from the spirit of the application.

[0021] Referring to Figure 1 , Figure 2 and Figure 3 . Figure 1 A schematic diagram of an architecture of a light sensing device according to an embodiment of the present application. Figure 2 A schematic diagram of a circuit architecture of a sensing pixel of a light sensing device according to an embodiment of the present application. Figure 3 A schematic diagram of a partial cross-sectional view of a light sensing device according to a first embodiment of the present application. As shown in Figure 1 , Figure 2 and Figure 3 A light sensing device SD according to an embodiment of the present application has a sensing region R1 and a peripheral region R2, the peripheral region R2 is adjacent to the sensing region R1, for example, the peripheral region R2 can be located around the sensing region R1, but not limited thereto. The light sensing device SD can include sensing pixels 210 and a driving circuit 220, the sensing pixels 210 can be disposed in the sensing region R1, and the driving circuit 220 can be disposed in the peripheral region R2. The light sensing device SD can include a plurality of sensing pixels 210, and the plurality of sensing pixels 210 can be disposed in the sensing region R1 in an array manner, for example, but not limited thereto. In some embodiments, as shown in Figure 1 A multiplexer 110 (MUX) can be disposed in the peripheral region R2, at least part of a circuit board 120 can be disposed in the peripheral region R2 and a signal reading element 130 can be disposed on the circuit board 120, for example, the driving circuit 220 can be disposed in the peripheral region R2 on one side (e.g., left or right) of the sensing region R1, the multiplexer 110 and at least part of the circuit board 120 can be disposed in the peripheral region R2 on the other side (e.g., below) of the sensing region R1, but not limited thereto.

[0022] A sensing pixel 210 can include a sensing circuit 212 and a sensing element 214 electrically connected to the sensing circuit 212, as shown in Figure 2As shown, the sensing circuit 212 is electrically connected to the driving circuit 220 located in the peripheral region R2. The sensing element 214 may be, for example, a photodiode, a phototransistor, a metal-semiconductor-metal photodetector (MSM photodetector), or any suitable photosensitive element, but is not limited thereto. The driving circuit 220 may include multiple thin-film transistors (not shown), and the driving circuit 220 may be used to provide a reset voltage Vrst and a selection voltage Vsel. For clarity of the invention, the sensing element 214 in this embodiment is described using a photodiode as an example. In some embodiments, such as Figure 2 As shown, the sensing pixel 210 may include multiple sensing elements 214 electrically connected to the sensing circuit 212, and the sensing circuit 212 may include, for example, thin-film transistors (TFTs) 1, 2, and 3. The anode of the sensing element 214 is electrically connected to the operating voltage Vcc2, and the cathode of the sensing element 214 is electrically connected to the first electrode of TFT1 and the gate of TFT2. TFT2 can generate a signal according to the change in the cathode voltage of the sensing element 214. TFT2 is electrically connected to TFT3, and TFT3 controls whether to output a signal based on the selection voltage Vsel. TFT1 can act as a reset element to reset the signal, TFT2 can act as a source follower element to make the source signal follow the gate signal, and TFT3 can act as a selection element to provide signal output. The second electrode of thin-film transistor TFT1 can be electrically connected to the operating voltage Vcc1, the gate of thin-film transistor TFT1 is electrically connected to the reset voltage Vrst, the first electrode of thin-film transistor TFT2 can be electrically connected to the operating voltage Vcc0, the second electrode of thin-film transistor TFT2 is electrically connected to the first electrode of thin-film transistor TFT3, the gate of thin-film transistor TFT3 is electrically connected to the selection voltage Vsel, and the second electrode of thin-film transistor TFT3 can output an output voltage Vout.

[0023] like Figure 3As shown, the photosensitive device SD may include a substrate layer 100, a circuit layer 200, and a light collimation structure 300. The circuit layer 200 is disposed on the substrate layer 100, and the light collimation structure 300 is disposed on the circuit layer 200. In some embodiments, the substrate layer 100 may include a substrate 102 and a buffer layer 104. The buffer layer 104 is disposed on the substrate 102, wherein the substrate 102 may include rigid and / or flexible materials, such as glass, quartz substrate, polyimide (PI), polyethylene terephthalate (PET), other suitable materials, or combinations thereof, but is not limited thereto. The circuit layer 200 may include a plurality of thin-film transistors 230, an insulating layer 240, an electrode layer 242, a sensing element 214, an insulating layer 246, an insulating layer 248, a transparent conductive layer 250, an insulating layer 252, and an insulating layer 254 sequentially disposed along a view direction Y opposite to that of the photosensitive device SD. The transparent conductive layer 250 may, for example, comprise indium tin oxide (ITO). Insulating layers 240, 246, 248, 252, and 254 may, for example, comprise organic or inorganic materials. Inorganic materials may, for example, comprise silicon oxide compounds (SiOx), silicon nitride compounds (SiNx), other suitable materials, or combinations thereof, but are not limited thereto. Electrode layer 242 may, for example, comprise a metallic material. The thin-film transistor 230 is used as a switching element or a driving element (e.g., Figure 2 The thin-film transistors TFT1, TFT2, and TFT3 shown may include a channel layer 231, a gate insulating layer 232, a gate 233, a first electrode 234 (e.g., a source), a second electrode 235 (e.g., a drain), and a dielectric layer 236, but are not limited thereto. Figure 3 The illustrated stacking of thin-film transistors 230 is just one example.

[0024] like Figure 1 and Figure 3As shown, the light collimation structure 300 of the light sensing device SD may include a light-shielding layer 310 (or a first light-shielding layer). The light-shielding layer 310 includes at least one first opening 312 corresponding to the sensing element 214, and the driving circuit 220 overlaps the light-shielding layer 310 in the top-view direction Y of the light sensing device SD. Through the design of this light-shielding layer 310, light collimation can be provided for the sensing element 214, or the influence of light on the driving circuit 220 can be reduced, thereby reducing the influence of stray light or ambient light and improving the light signal-to-noise ratio of the sensing pixel 210. In some embodiments, the light-shielding layer 310 may include organic materials, such as light-absorbing materials including black photoresist. The provision of the light-shielding layer 310 can improve the light signal-to-noise ratio, or reduce the generation of stray capacitance between the light-shielding layer 310 and the transparent conductive layer 250, thereby increasing the sensitivity of the sensing element 214.

[0025] In some embodiments, such as Figure 3 As shown, the light collimation structure 300 of the light sensing device SD may include a light-shielding layer 310 (or first light-shielding layer), an insulating layer 315, a light-shielding layer 320 (or second light-shielding layer), an insulating layer 325, a light-shielding layer 330 (or third light-shielding layer), and a microlens 340 arranged sequentially along a direction opposite to the top view Y. The insulating layer 315 is disposed between the first light-shielding layer 310 and the second light-shielding layer 320, and the insulating layer 325 is disposed between the second light-shielding layer 320 and the third light-shielding layer 330. The insulating layers 315 and 325 may, for example, comprise organic materials. The first light-shielding layer 310 may be disposed between the second light-shielding layer 320 and the sensing element 214, and the second light-shielding layer 320 includes at least one second opening 322 that overlaps the first opening 312 of the first light-shielding layer 310 in the top view Y. The size of the first opening 312 of the first light-shielding layer 310 may be smaller than the size of the second opening 322 of the second light-shielding layer 320. For example, the width W1 of the first opening 312 in the X direction may be smaller than the width W2 of the second opening 322, wherein the X direction may be approximately perpendicular to the top-viewing direction Y. A microlens 340 may be disposed on the first light-shielding layer 310, and the microlens 340 overlaps the first opening 312 in the top-viewing direction Y. For example, the first opening 312 may approximately correspond to the center or the thickest part of a microlens 340, but is not limited thereto. A third light-shielding layer 330 may be disposed between the microlens 340 and the first light-shielding layer 310 and may be disposed between the microlens 340 and the second light-shielding layer 320, and the third light-shielding layer 330 includes at least one third opening 332 that overlaps the first opening 312 of the first light-shielding layer 310 in the top-viewing direction Y. The size of the first opening 312 of the first light-shielding layer 310 can be smaller than the size of the third opening 332 of the third light-shielding layer 330. For example, the width W1 of the first opening 312 in the X direction can be smaller than the width W3 of the third opening 332.

[0026] In some embodiments, the first light-shielding layer 310, the second light-shielding layer 320, and the third light-shielding layer 330 may include organic materials, such as black photoresist. Therefore, the first light-shielding layer 310 disposed between the insulating layer 254 and the insulating layer 315, the second light-shielding layer 320 disposed between the insulating layer 315 and the insulating layer 325, and / or the third light-shielding layer 330 disposed between the insulating layer 325 and the microlens 340 can have good adhesion. These layers do not require additional protective layers to improve adhesion, thus reducing the impact of protective layers on light transmission. Furthermore, the first light-shielding layer 310, the insulating layer 315, the second light-shielding layer 320, the insulating layer 325, the third light-shielding layer 330, and the microlens 340 can be formed using a photolithography process, reducing process complexity.

[0027] Please refer to Figure 4 . Figure 4 This is a partial cross-sectional schematic diagram of a light sensing device according to a second embodiment of the present invention. In some embodiments, such as... Figure 4As shown, the light collimation structure 300 of the light sensing device SD can include a light blocking layer 310, an insulating layer 315, a light blocking layer 320, an insulating layer 325, a light blocking layer 330, and a microlens 340. The light blocking layer 310 can be disposed between the light blocking layer 320 and the sensing element 214, and the light blocking layer 320 includes an organic material, such as including a black photoresist material, and the light blocking layer 310 includes a metal material. Due to the light blocking layer 310 including the metal material, the light blocking layer 310 can be manufactured with a smaller size of the aperture 312 to improve the signal-to-noise ratio of the light signal. The light blocking layer 330 can be disposed between the microlens 340 and the light blocking layer 320, and the light blocking layer 330 includes an organic material. The insulating layer 315, the light blocking layer 320, the insulating layer 325, the light blocking layer 330, and the microlens 340 are all formed by a photolithography process, which can reduce the process complexity. In some embodiments, the light collimation structure 300 can further include a protective layer 350 and / or a protective layer 352. The protective layer 350 can be disposed between the light blocking layer 310 and the insulating layer 254, and the protective layer 352 can be disposed between the light blocking layer 310 and the insulating layer 315 to improve the adhesion between the light blocking layer 310 and the insulating layer 254 or between the light blocking layer 310 and the insulating layer 315, and increase the reliability of the light sensing device SD, wherein the protective layer 350 and the protective layer 352 can include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but are not limited thereto. In some embodiments, the protective layer 352 can be replaced by an anti-reflective layer disposed on the light blocking layer 310, wherein the anti-reflective layer can be a multi-layer composite structure composed of a high refractive index layer and a low refractive index layer, but is not limited thereto. In some embodiments, the light collimation structure 300 can further include a protective layer 354 disposed between the light blocking layer 330 and the microlens 340 to improve the adhesion between the light blocking layer 330 and the microlens 340, and increase the reliability of the light sensing device SD, wherein the protective layer 354 can include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but are not limited thereto.

[0028] Reference is made to Figure 5 . Figure 5 is a partial cross-sectional schematic view of a light sensing device according to a third embodiment of the present disclosure. In some embodiments, as shown in FIG. 3B, the light collimation structure 300 of the light sensing device SD can include a light blocking layer 310, an insulating layer 315, a light blocking layer 320, an insulating layer 325, a light blocking layer 330, and a microlens 340. The light blocking layer 310 can be disposed between the light blocking layer 320 and the sensing element 214, and the light blocking layer 320 includes an organic material, such as including a black photoresist material, and the light blocking layer 310 includes a metal material. Due to the light blocking layer 310 including the metal material, the light blocking layer 310 can be manufactured with a smaller size of the aperture 312 to improve the signal-to-noise ratio of the light signal. The light blocking layer 330 can be disposed between the microlens 340 and the light blocking layer 320, and the light blocking layer 330 includes an organic material. The insulating layer 315, the light blocking layer 320, the insulating layer 325, the light blocking layer 330, and the microlens 340 are all formed by a photolithography process, which can reduce the process complexity. In some embodiments, the light collimation structure 300 can further include a protective layer 350 and / or a protective layer 352. The protective layer 350 can be disposed between the light blocking layer 310 and the insulating layer 254, and the protective layer 352 can be disposed between the light blocking layer 310 and the insulating layer 315 to improve the adhesion between the light blocking layer 310 and the insulating layer 254 or between the light blocking layer 310 and the insulating layer 315, and increase the reliability of the light sensing device SD, wherein the protective layer 350 and the protective layer 352 can include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but are not limited thereto. In some embodiments, the protective layer 352 can be replaced by an anti-reflective layer disposed on the light blocking layer 310, wherein the anti-reflective layer can be a multi-layer composite structure composed of a high refractive index layer and a low refractive index layer, but is not limited thereto. In some embodiments, the light collimation structure 300 can further include a protective layer 354 disposed between the light blocking layer 330 and the microlens 340 to improve the adhesion between the light blocking layer 330 and the microlens 340, and increase the reliability of the light sensing device SD, wherein the protective layer 354 can include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but are not limited thereto. Figure 5As shown, the optical collimation structure 300 of the photosensitive device SD may include a light-shielding layer 310, an insulating layer 315, a light-shielding layer 320, an insulating layer 325, a light-shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing element 214, and both the light-shielding layers 310 and 320 comprise organic materials, such as black photoresist. The light-shielding layer 330 may be disposed between the light-shielding layer 320 and the microlens 340, and the light-shielding layer 330 comprises a metallic material. Because the light-shielding layer 330 comprises a metallic material, it can have a thinner thickness compared to materials comprising organic materials, reducing surface defects and making the subsequent fabrication process of the microlens 340 easier to control. The light-shielding layers 310, 315, 320, and 325 can be formed using a photolithography process, reducing process complexity. In some embodiments, the optical collimation structure 300 may further include a protective layer 356 and / or a protective layer 358. The protective layer 356 may be disposed between the light-shielding layer 330 and the insulating layer 325, and the protective layer 358 may be disposed between the light-shielding layer 330 and the microlens 340, so as to improve the adhesion between the light-shielding layer 330 and the insulating layer 325 and the microlens 340, and increase the reliability of the photosensitive device SD. The protective layer 356 and the protective layer 358 may include silicon nitride compound (SiNx), silicon oxide compound (SiOx), other suitable materials or combinations of the above materials, but are not limited thereto.

[0029] Please refer to Figure 6 . Figure 6 This is a partial cross-sectional schematic diagram of a light sensing device according to a fourth embodiment of the present invention. In some embodiments, such as... Figure 6As shown, the optical collimation structure 300 of the photosensitive device SD may include a light-shielding layer 310, an insulating layer 315, a light-shielding layer 320, an insulating layer 325, a light-shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing element 214, and the light-shielding layer 310 comprises an organic material, such as a black photoresist material. The light-shielding layer 320 comprises a metallic material. The light-shielding layer 330 may be disposed between the light-shielding layer 320 and the microlens 340, and the light-shielding layer 330 comprises an organic material. Because the light-shielding layer 320 comprises a metallic material, the alignment of the light-shielding layers 310 and 320 is more precise during the manufacturing process. The light-shielding layers 310, 315, 325, 330, and 340 can be formed using a photolithography process, which reduces the complexity of the manufacturing process. In some embodiments, the optical collimation structure 300 may further include a protective layer 360 and / or a protective layer 362. The protective layer 360 may be disposed between the light-shielding layer 320 and the insulating layer 315, and the protective layer 362 may be disposed between the light-shielding layer 320 and the insulating layer 325 to improve the adhesion between the light-shielding layer 320 and the insulating layer 315 or between the light-shielding layer 320 and the insulating layer 325, thereby increasing the reliability of the photosensitive device SD. The protective layer 360 and the protective layer 362 may include silicon nitride compound (SiNx), silicon oxide compound (SiOx), other suitable materials or combinations of the above materials, but are not limited thereto.

[0030] Please refer to Figure 7 . Figure 7 This is a partial cross-sectional schematic diagram of a light sensing device according to a variation of the fourth embodiment of the present invention. In some embodiments, such as Figure 7As shown, the light collimation structure 300 of the light sensing device SD can include a light blocking layer 310, an insulating layer 315, a light blocking layer 320, an insulating layer 325, a light blocking layer 330, and a microlens 340. The light blocking layer 310 can be disposed between the light blocking layer 320 and the sensing element 214, and the light blocking layer 310 includes an organic material, which can include black photoresist material for example, and the light blocking layer 320 includes a metallic material. The light blocking layer 330 can be disposed on the microlens 340, and the light blocking layer 330 includes at least one aperture 332 overlapping the aperture 312 of the light blocking layer 310 in the top-down direction Y, and the aperture 332 can accommodate the microlens 340. The light blocking layer 330 can include an organic material. The light collimation structure 300 can further include a protective layer 360 disposed between the light blocking layer 320 and the insulating layer 315, and / or a protective layer 362 disposed between the light blocking layer 320 and the insulating layer 325, wherein the protective layers 360 and 362 can include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or combinations thereof, but are not limited thereto. In the present embodiment, the microlens 340 is first disposed on the insulating layer 325, and then the light blocking layer 330 is disposed on the microlens 340, so that the microlens 340 can be disposed on a flat surface, thereby reducing the difficulty of the process.

[0031] Please refer to Figure 8 、 Figure 1 and Figure 2 . Figure 8 A partial cross-sectional schematic view of a light sensing device according to an embodiment of the present disclosure. In some embodiments, as shown in FIG. 1, the light sensing device SD can include a substrate 210, a sensing element 214, a light blocking layer 220, a light blocking layer 230, a light blocking layer 240, a light blocking layer 250, a light blocking layer 260, a light blocking layer 270, a light blocking layer 280, a light blocking layer 290, and a microlens 240. Figure 8 、 Figure 1 and Figure 2As shown, at least one of the light shielding layers 310, 320, 330 of the light sensing device SD can extend outward from a side edge 220S of the drive circuit 220 by a certain distance. In detail, when ambient light (e.g. sunlight) is incident to the light sensing device SD with an angle θ with respect to the direction X, which can be substantially perpendicular to the top view direction Y of the light sensing device SD, an edge 320a of the light shielding layer 320 adjacent to the side edge 220S of the drive circuit 220 can extend outward from the drive circuit 220 by a first extension distance L1, the vertical distance between the light shielding layer 320 and the drive circuit 220 in the top view direction Y is a first distance D1, and the first extension distance L1*tan θ is greater than or equal to the first distance D1 (L1*tan θ ≥ D1), so as to reduce the influence of ambient light on the light sensing device SD sensing light signals. For example, when the incident light angle θ is 45 degrees (tan 45° = 1), the first extension distance L1 can be greater than or equal to the first distance D1 (i.e. L1 ≥ D1). Here, the first distance D1 can be measured, for example, from the upper surface of the thin film transistor in the drive circuit 220 to the lower surface of the light shielding layer 320. In some embodiments, at least one of the light shielding layers 310, 320, 330 of the light sensing device SD can extend outward from a side edge 210S1 (or 210S2) of the sensing pixel 210 by a distance. For example, an edge 320b of the light shielding layer 320 adjacent to a side 210S1 of the sensing pixel 210 can extend outward from the sensing pixel 210 by a second extension distance L2, the vertical distance between the light shielding layer 320 and the sensing element 214 of the sensing pixel 210 in the top view direction Y is a second distance D2, and the second extension distance L2*tan θ is greater than or equal to the second distance D2 (L2*tan θ ≥ D2), so as to reduce the influence of ambient light on the light sensing device SD sensing light signals. For example, when the incident light angle θ is 45 degrees (tan 45° = 1), the second extension distance L2 can be greater than or equal to the second distance D2 (i.e. L2 ≥ D2). Here, the second distance D2 can be measured, for example, from the upper surface of the sensing element 214 (not shown) to the lower surface of the light shielding layer 320. Figure 8

[0032] In summary, according to the light sensing device of the embodiments of the present application, the design of the light shielding layer can reduce the influence of stray light or ambient light, thereby improving the signal-to-noise ratio of the light signal, or reducing the process complexity or improving the adhesion between layers. Furthermore, the light shielding layer can include an organic material to reduce the generation of stray capacitance between the light shielding layer and the conductive layer, thereby increasing the sensitivity of the sensing element. In addition, the light shielding layer can include a metal material, so that the light shielding layer can be manufactured with smaller openings, or the light shielding layer can have a thinner thickness, thereby facilitating subsequent processes.

[0033] ​The above merely illustrates the embodiments of the present application but should not be taken as limitations. Various changes and modifications can be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A photosensitive device, characterized in that, The optical sensing device has a sensing area and a peripheral area adjacent to the sensing area. The optical sensing device includes: A sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit, the sensing element being disposed corresponding to the sensing area; A driving circuit is electrically connected to the sensing circuit; A first light-shielding layer, including at least one first opening corresponding to the sensing element; and A second light-shielding layer includes at least one second opening that overlaps the at least one first opening in a top view of the light sensing device, and the second light-shielding layer overlaps the driving circuit in the top view. In the light sensing device, the second light-shielding layer includes a first portion, which is at least partially disposed in relation to the surrounding area and includes a first edge and a second edge that are opposite to each other. The first edge is further away from the sensing element than the second edge. The horizontal distance of the first edge extending outward from the sensing pixel is defined as a second extension distance. The vertical distance between the first portion and the sensing element in the top view direction is defined as a spacing, and the second extension distance is greater than or equal to the spacing.

2. The photosensitive device according to claim 1, characterized in that, The first light-shielding layer comprises organic materials.

3. The photosensitive device according to claim 1, characterized in that, The first light-shielding layer comprises an organic material, and the second light-shielding layer comprises a metallic material.

4. The photosensitive device according to claim 1, characterized in that, The second light-shielding layer is disposed between the first light-shielding layer and the sensing element.

5. The photosensitive device according to claim 1, characterized in that, The first light-shielding layer is disposed between the second light-shielding layer and the sensing element.

6. The photosensitive device according to claim 1, characterized in that, It also includes a microlens disposed on the first light-shielding layer, and the microlens overlaps the at least one first opening in the top view direction.

7. The photosensitive device according to claim 6, characterized in that, It also includes a third light-shielding layer disposed between the microlens and the first light-shielding layer, and the third light-shielding layer includes at least one third opening that overlaps the at least one first opening in the top view direction.

8. The photosensitive device according to claim 6, characterized in that, It also includes a third light-shielding layer disposed on the microlens, and includes at least one third opening that overlaps the at least one first opening in the top view direction.

9. The photosensitive device according to claim 1, characterized in that, The second light-shielding layer extends outward from the driving circuit by a first extension distance from one edge of the driving circuit. In the top view direction, the vertical distance between the second light-shielding layer and the driving circuit is a first gap, and the first extension distance is greater than or equal to the first gap.

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