Substrate processing device, plasma generating device, method for manufacturing semiconductor device, substrate processing method, and recording medium

Abstract

The present invention relates to a substrate processing device, a plasma generating device, a method for manufacturing a semiconductor device, a substrate processing method, and a recording medium, and provides a technology capable of reducing variations in substrate processing performance for a plurality of substrates. The technology comprises: a first plasma electrode unit (377) comprising a rod-shaped electrode (370) as a first reference electrode to which a reference potential is applied, and at least one of rod-shaped electrodes (369, 371) as a first application electrode and a second application electrode to which high-frequency power is applied, for exciting a gas into plasma; and a second plasma electrode unit (277) comprising a rod-shaped electrode (270) as a second reference electrode to which a reference potential is applied, and a rod-shaped electrode (269, 271) as a third application electrode to which high-frequency power is applied and having a length different from that of the first application electrode and the second application electrode, for exciting a gas into plasma.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a plasma generating apparatus, a method for manufacturing a semiconductor device, a substrate processing method, and a recording medium. Background Art

[0002] As one of the steps in the manufacturing process of a semiconductor device, the following substrate processing is sometimes performed: raw material gas, reaction gas, etc. are activated by plasma and then provided to a substrate housed in a processing chamber of a substrate processing device, thereby forming various films such as insulating films, semiconductor films, and conductor films on the substrate, or removing various films.

[0003] When using plasma to process multiple substrates, it is desirable to uniformly supply active species generated by the plasma to each substrate in order to minimize variations in the processing throughput across the substrates. Variations in the plasma within the processing chamber can lead to variations in the active species, sometimes resulting in different processing throughputs across the substrates.

[0004] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-92637 Summary of the Invention

[0005] An object of the present invention is to provide a technology capable of reducing variations in throughput of a plurality of substrates.

[0006] According to one embodiment of the present disclosure, the following technology is provided, comprising:

[0007] a processing chamber that processes a substrate;

[0008] a gas supply unit for supplying gas into the processing chamber;

[0009] a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied and a first reference electrode to which a reference potential is applied, and exciting the gas into plasma; and

[0010] The second plasma electrode unit includes a second reference electrode to which a reference potential is applied, and a third application electrode to which high-frequency power is applied and having a length different from that of the first application electrode and the second application electrode, and excites the gas into plasma.

[0011] According to the present disclosure, it is possible to provide a technology for reducing variations in throughput for a plurality of substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus preferably used in an embodiment of the present disclosure, showing the processing furnace portion in a vertical cross-section.

[0013] Figure 2 yes Figure 1 AA cross-sectional view of the substrate processing apparatus shown.

[0014] Figure 3 This is an enlarged cross-sectional view for explaining a buffer structure of a substrate processing apparatus preferably used in an embodiment of the present disclosure.

[0015] Figure 4 This is a schematic diagram for explaining a buffer structure of a substrate processing apparatus preferably used in an embodiment of the present disclosure.

[0016] Figure 5 It is a simplified explanatory diagram of a reaction tube and rod-shaped electrodes of a comparative example, and a graph showing power ratios at positions (in the substrate stacking direction) within the reaction tube 203 (inside the furnace).

[0017] Figure 6 It is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes.

[0018] Figure 7 yes Figure 1 The schematic configuration diagram of the controller in the substrate processing apparatus shown is a block diagram showing an example of a control system of the controller.

[0019] Figure 8 It means using Figure 1 A flow chart of an example of a substrate processing process of the substrate processing apparatus shown.

[0020] Figure 9 This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes in Modification 1 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0021] Figure 10 This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes of Modification 2 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0022] Figure 11 This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes of Modification 3 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0023] Figure 12 This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes in Modification 4 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0024] Figure 13This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes in Modification 5 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0025] Figure 14 This is a simplified explanatory diagram showing the reaction tube 203 and the lengths of the rod-shaped electrodes in Modification 6 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0026] Figure 15 This is a schematic cross-sectional view for explaining a seventh modification of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0027] Figure 16 This is a schematic cross-sectional view for explaining Modification 8 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0028] Figure 17 This is a schematic cross-sectional view for explaining a ninth modification of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0029] Figure 18 This is a schematic cross-sectional view for explaining a modified example 10 of a vertical processing furnace of a substrate processing apparatus preferably used in an embodiment of the present disclosure.

[0030] Figure 19 This is a schematic cross-sectional view for explaining Modification 11 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure.

[0031] Figure 20 This is a schematic cross-sectional view for explaining Modification 12 of the vertical processing furnace of the substrate processing apparatus preferably used in the embodiment of the present disclosure. DETAILED DESCRIPTION

[0032] Below, refer to Figures 1 to 8 The embodiments of the present disclosure are described. The drawings used in the following description are schematic diagrams, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily be consistent with reality. In addition, the dimensional relationships and ratios of the elements in multiple drawings may not necessarily be consistent.

[0033] (1) Structure of substrate processing apparatus

[0034] (Heating device)

[0035] like Figure 1As shown, the processing furnace 202 includes a heater 207 as a heating device (heating mechanism). Heater 207 is cylindrical and is supported vertically by a heater base (not shown) serving as a holding plate. As described later, heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat.

[0036] (Processing Room)

[0037] A reaction tube 203 is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and has a cylindrical shape with a closed top and an open bottom. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and has a cylindrical shape with open top and bottom ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. By supporting the manifold 209 on the heater base, the reaction tube 203 is mounted vertically. The reaction tube 203 and the manifold 209 primarily constitute the processing vessel (reaction vessel).

[0038] A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a plurality of substrates, namely wafers 200. The processing container is not limited to the above structure, and the reaction tube 203 may be simply referred to as a processing container.

[0039] (Gas supply unit)

[0040] Nozzles 249a and 249b are installed in the processing chamber 201 so as to penetrate the sidewall of the manifold 209. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. Thus, the two nozzles 249a and 249b and the two gas supply pipes 232a and 232b are installed in the processing container, enabling the supply of multiple gases into the processing chamber 201. When only the reaction tube 203 is used as the processing container, the nozzles 249a and 249b can be installed so as to penetrate the sidewall of the reaction tube 203.

[0041] Gas supply pipes 232a and 232b are provided, in order from upstream, with mass flow controllers (MFCs) 241a and 241b, respectively, serving as flow controllers (flow control units), and valves 243a and 243b, respectively, serving as on-off valves. Downstream of valves 243a and 243b, gas supply pipes 232c and 232d, respectively, for supplying inert gas, are connected to gas supply pipes 232a and 232b. MFCs 241c and 241d, respectively, and valves 243c and 243d, respectively, are provided in order from upstream.

[0042] like Figure 2 As shown, nozzles 249a are installed in the space between the inner wall of reaction tube 203 and wafers 200, extending from the lower portion to the upper portion of the inner wall of reaction tube 203, and extending upward in the loading direction of wafers 200. Specifically, nozzles 249a are installed along the wafer arrangement area (placement area) to the side of the wafer arrangement area (placement area), in an area horizontally surrounding the wafer arrangement area where the wafers are arranged (placed). Specifically, nozzles 249a are installed to the side of the end (outer edge) of each wafer 200 transported into processing chamber 201, in a direction perpendicular to the surface (flat surface) of the wafer 200.

[0043] A gas supply hole 250a for supplying gas is provided on the side of the nozzle 249a. The gas supply hole 250a opens toward the center of the reaction tube 203 and can supply gas to the wafer 200. Multiple gas supply holes 250a are provided from the bottom to the top of the reaction tube 203. The gas supply holes 250a each have the same opening area and are arranged at the same opening pitch.

[0044] The nozzle 249b is connected to the front end of the gas supply pipe 232b. The nozzle 249b is set in the buffer chamber 237 as the gas dispersion space. Figure 2 As shown, in the annular space between the inner wall of the reaction tube 203 and the chip 200 when viewed from above, and in the portion from the lower part to the upper part of the inner wall of the reaction tube 203, a buffer chamber 237 is provided along the loading direction of the chip 200. That is, in the area horizontally surrounding the chip arrangement area on the side of the chip arrangement area, a portion of the buffer chamber 237 is formed by the buffer structure (partition wall) 300 along the chip arrangement area. Here, the space in the reaction tube 203 divided by the buffer structure 300 in the buffer chamber 237 is referred to as a second buffer chamber. The buffer structure 300 is composed of an insulating material such as quartz or SiC as a heat-resistant material, and gas supply ports 302, 304, and 306 for supplying gas are formed on the wall surface of the buffer structure 300 formed in an arc shape. As shown Figure 2 and Figure 3As shown, in the plasma generation region 224a between rod-shaped electrodes 269 and 270 (described later), the plasma generation region 224b between rod-shaped electrodes 270 and 271, and the region between rod-shaped electrode 271 and nozzle 249b, gas supply ports 302, 304, and 306 are each opened toward the center of reaction tube 203 at opposing wall surfaces, thereby enabling gas to be supplied to wafer 200. Multiple gas supply ports 302, 304, and 306 are provided from the bottom to the top of reaction tube 203, each having the same opening area and being arranged at the same opening pitch.

[0045] Nozzles 249b are arranged vertically along the inner wall of the reaction tube 203, extending from the bottom to the top, in the direction in which the wafers 200 are loaded. Specifically, nozzles 249b are arranged along the wafer arrangement area, within the buffer structure 300, in an area horizontally surrounding the wafer arrangement area to the sides of the wafer 200 being arranged. Specifically, nozzles 249b are arranged perpendicular to the surface of the wafer 200, to the sides of the ends of the wafers 200 being transported into the processing chamber 201. Gas supply holes 250b are provided on the sides of nozzles 249b for supplying gas. Gas supply holes 250b open radially toward the arcuate wall of the buffer structure 300, enabling gas to be supplied toward the wall. This disperses the reaction gas within the buffer chamber 237, preventing it from directly striking the rod-shaped electrodes 269-271 and suppressing the generation of particles. Similar to the gas supply holes 250 a , a plurality of gas supply holes 250 b are provided from the bottom to the top of the reaction tube 203 .

[0046] A buffer structure 400 having the same structure as the buffer structure 300 is provided on the inner wall of the reaction tube 203. That is, in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area, another portion of the buffer chamber 237 is formed along the wafer arrangement area by the buffer structure 400. Here, the space in the reaction tube 203 divided by the buffer structure 400 in the buffer chamber 237 is referred to as the first buffer chamber. Figure 2 As shown, in a plan view, the buffer structures 300 and 400 are arranged symmetrically with respect to a line passing through the exhaust pipe 231 and the center of the reaction tube 203, with the exhaust pipe 231 (described later) interposed therebetween. Furthermore, in a plan view, the nozzle 249a is positioned opposite the exhaust pipe 231 with the wafer 200 interposed therebetween. Furthermore, the nozzles 249b and 249c are positioned within the buffer chambers 237 of the respective buffer structures 300 and 400, respectively, at locations away from the exhaust pipe 231.

[0047] The gas supply pipe 232b is divided into two branches, one of which is connected to the front end of the nozzle 249b, and the other is connected to the front end of the nozzle 249c. The nozzle 249c is set in the buffer chamber 237 on the side of the buffer structure 400 as a gas dispersion space. Figure 1 In FIG, the buffer structure 400 overlaps with the buffer structure 300 and is not shown in the figure.

[0048] Gas supply ports 402, 404, and 406 for supplying gas are formed on the arc-shaped wall surface of the buffer structure 400. Figure 2 and Figure 4 As shown, in the plasma generation region 324a between rod-shaped electrodes 369 and 370 (described later), the plasma generation region 324b between rod-shaped electrodes 370 and 371, and the region between rod-shaped electrode 371 and nozzle 249c, gas supply ports 402, 404, and 406 are each opened toward the center of reaction tube 203 at opposing wall surfaces, enabling gas to be supplied to wafer 200. Multiple gas supply ports 402, 404, and 406 are provided from the bottom to the top of reaction tube 203, each having the same opening area and being arranged at the same opening pitch.

[0049] Nozzles 249c are arranged vertically along the inner wall of the reaction tube 203, extending from the bottom to the top, in the direction in which the wafers 200 are loaded. Specifically, nozzles 249c are arranged along the wafer arrangement area, within the buffer structure 400, in an area horizontally surrounding the wafer arrangement area to the sides of the wafer 200. Specifically, nozzles 249c are arranged perpendicularly to the surface of the wafer 200, to the sides of the end of the wafer 200 being transported into the processing chamber 201. Gas supply holes 250c are provided on the sides of the nozzles 249c for supplying gas. The gas supply holes 250c open radially toward the arcuate wall of the buffer structure 400, enabling gas to be supplied toward the wall. This disperses the reaction gas within the buffer chamber 237, preventing it from directly blowing toward the rod-shaped electrodes 369-371, thereby suppressing the generation of particles. Similar to the gas supply holes 250 a , a plurality of gas supply holes 250 c are provided from the bottom to the top of the reaction tube 203 .

[0050] Thus, in this embodiment, gas is supplied through nozzles 249a, 249b, and 249c and two buffer chambers 237. These nozzles 249a, 249b, and 249c are located within a longitudinal, annular, cylindrical space defined by the inner wall of the reaction tube 203 sidewall and the ends of the plurality of wafers 200 arranged within the reaction tube 203. Gas is initially ejected from gas supply holes 250a, 250b, and 250c, and gas supply ports 302, 304, 306, 402, 404, and 406, respectively, opening in the nozzles 249a, 249b, and 249c and the two buffer chambers 237, toward the space within the reaction tube 203 where the wafers 200 are located, near the wafers 200. Furthermore, the main flow of gas within the reaction tube 203 is directed parallel to the surface of the wafers 200, that is, in the horizontal direction. By adopting such a structure, gas can be uniformly supplied to each wafer 200, and the uniformity of the film thickness of the film formed on each wafer 200 can be improved. The gas flowing on the surface of the wafer 200, that is, the residual gas after the reaction, flows toward the exhaust port, that is, the exhaust pipe 231 described later. However, the direction of the flow of this residual gas is appropriately determined according to the position of the exhaust port and is not limited to the vertical direction.

[0051] As a raw material containing a predetermined element, for example, a raw material gas containing silicon (Si) is supplied from the gas supply pipe 232 a through the MFC 241 a , the valve 243 a , and the nozzle 249 a into the processing chamber 201 .

[0052] The raw material gas refers to a gaseous raw material, for example, a gas obtained by vaporizing a liquid raw material at room temperature and pressure, or a raw material that is gaseous at room temperature and pressure. When the term "raw material" is used in this specification, it may refer to "liquid raw material", "gaseous raw material gas", or both.

[0053] A reaction gas (reactant, reactant) having a chemical structure different from that of the raw material, such as an oxygen (O)-containing gas, is supplied from gas supply pipe 232b via MFC 241b, valve 243b, and nozzles 249b and 249c into processing chamber 201. The oxygen-containing gas serves as an oxidizing agent (oxidizing gas), i.e., an oxygen source. For example, the gas is excited into a plasma using a plasma source described later and supplied as an excitation gas.

[0054] Inert gas is supplied into the processing chamber 201 from the gas supply pipes 232 c and 232 d via the MFCs 241 c and 241 d , valves 243 c and 243 d , and nozzles 249 a , 249 b , and 249 c , respectively.

[0055] The raw gas supply system, which serves as the first gas supply system, is primarily comprised of the gas supply pipe 232a, MFC 241a, and valve 243a. The reactive gas supply system (reactant supply system), which serves as the second gas supply system, is primarily comprised of the gas supply pipe 232b, MFC 241b, and valve 243b. The inert gas supply system is primarily comprised of the gas supply pipes 232c and 232d, MFCs 241c and 241d, and valves 243c and 243d. The raw gas supply system, reactive gas supply system, and inert gas supply system are also referred to as the gas supply system (gas supply unit). In this specification, the raw gas, reactive gas, and other gases used for substrate processing of the wafer 200 are sometimes collectively referred to as process gases, and the raw gas supply system, reactive gas supply system, and other structures that supply these gases are sometimes collectively referred to as the process gas supply system (process gas supply unit).

[0056] (Substrate Support)

[0057] like Figure 1 As shown, the wafer boat 217 serving as a substrate support (substrate support portion) is configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal position and arranged in a vertical direction with their centers aligned with each other, in multiple layers, that is, arranged at intervals. The wafer boat 217 is made of, for example, a heat-resistant material such as quartz or SiC. Insulation plates 218 made of, for example, a heat-resistant material such as quartz or SiC are supported in multiple layers at the bottom of the wafer boat 217. According to this structure, heat from the heater 207 is difficult to conduct to the sealing cover 219 side. However, this embodiment is not limited to this method. For example, instead of providing the insulation plate 218 at the bottom of the wafer boat 217, an insulation cylinder made of a heat-resistant material such as quartz or SiC as a cylindrical member may be provided.

[0058] (Plasma generation unit)

[0059] Next, use Figures 1 to 6 The plasma generating unit will be described.

[0060] like Figure 2 As shown, capacitively coupled plasma (CCP) is used, and plasma is generated inside the buffer chamber 237 which is a vacuum partition wall made of quartz or the like when a reaction gas is supplied.

[0061] In one example of this embodiment, in the buffer chamber 237 of the buffer structure 300, as shown in FIG. Figure 3As shown, three elongated rod-shaped electrodes 269, 270, and 271 made of a conductive material are arranged from the bottom to the top of the reaction tube 203 along the loading direction of the wafer 200. Rod-shaped electrodes 269, 270, and 271 are arranged parallel to the nozzle 249b. Rod-shaped electrodes 269, 270, and 271 are protected by electrode protection tubes 275 from top to bottom. Electrode protection tubes 275 are made of quartz tubes that protect rod-shaped electrodes 269, 271, and 270. In this embodiment, the three quartz tubes are separated. The electrode protection tubes may also have other shapes, such as partition walls, to prevent contact between rod-shaped electrodes 269, 270, and 271. Rod-shaped electrodes 269 and 270 are positioned with their tips located above electrode protection tube 275, while rod-shaped electrode 271 is positioned with its tip located below electrode protection tube 275. The rod electrodes 269 and 270 have substantially the same length, and the rod electrode 271 has a different length from the rod electrodes 269 and 270 . More specifically, the lengths in the wafer 200 loading direction are different, and the rod electrodes 269 and 270 are longer than the rod electrode 271 .

[0062] like Figure 2 As shown, of the rod-shaped electrodes 269, 270, and 271, the rod-shaped electrodes 269 and 271 (the fourth rod-shaped electrode 269 and the third rod-shaped electrode 271) located at both ends of the rod-shaped electrodes 269 and 271 are connected to a high-frequency power source 273 via a matching device 272, to which high-frequency power is applied. Rod-shaped electrode 270, serving as a second reference electrode, is connected to the earth, serving as a reference potential, and is grounded, to which the reference potential is supplied. Thus, rod-shaped electrodes connected to the high-frequency power source 273 and grounded rod-shaped electrodes are alternately arranged. Rod-shaped electrode 270, located between rod-shaped electrodes 269 and 271 connected to the high-frequency power source 273, serves as the grounded rod-shaped electrode and is common to both rod-shaped electrodes 269 and 271.

[0063] In other words, the grounded rod-shaped electrode 270 is positioned between adjacent rod-shaped electrodes 269 and 271 connected to a high-frequency power source 273. Rod-shaped electrodes 269 and 270, and rod-shaped electrodes 271 and 270, form pairs to generate plasma. Specifically, the grounded rod-shaped electrode 270 is shared by the two rod-shaped electrodes 269 and 271 adjacent to the rod-shaped electrode 270 and connected to the high-frequency power source 273. This reduces the number of reference electrodes. Furthermore, by applying high-frequency (RF) power from the high-frequency power source 273 to the rod-shaped electrodes 269 and 271, plasma is generated in the plasma generation region 224a between the rod-shaped electrodes 269 and 270 and in the plasma generation region 224b between the rod-shaped electrodes 270 and 271.

[0064] The second plasma electrode unit 277 is mainly composed of rod-shaped electrodes 269, 270, 271 and an electrode protection tube 275 (see Figure 6 , the electrode protection tube 275 is omitted from the illustration.) Although the example in which the applying electrodes are two rod-shaped electrodes 269 and 271 has been described, the applying electrode may be one or three or more.

[0065] like Figure 4 As shown, within the buffer chamber 237 of the buffer structure 400, three elongated rod-shaped electrodes 369, 370, and 371 made of a conductive material are arranged from the bottom to the top of the reaction tube 203 along the loading direction of the wafer 200. The rod-shaped electrodes 369, 370, and 371 are arranged parallel to the nozzle 249c. The rod-shaped electrodes 369, 370, and 371 are protected by electrode protection tubes 375 from top to bottom. The electrode protection tubes 375 are made of quartz tubes that protect the rod-shaped electrodes 369, 371, and 370. In this embodiment, the three quartz tubes are separated. The electrode protection tubes may also have other shapes, such as partition walls, to prevent the rod-shaped electrodes 369, 370, and 371 from contacting each other. The rod-shaped electrodes 369, 370, and 371 are arranged with their tips positioned above the electrode protection tubes 375.

[0066] Rod electrodes 369, 370, and 371 have approximately the same length, which is approximately the same length as rod electrodes 269 and 270. Rod electrodes 369, 370, and 371 differ from rod electrode 271 in length, or more specifically, in length in the direction in which wafer 200 is loaded. Rod electrodes 369, 370, and 371 are longer than rod electrode 271.

[0067] like Figure 2 As shown, of the rod-shaped electrodes 369, 370, and 371, the rod-shaped electrodes 369 and 371 (the first rod-shaped electrode 369 and the second rod-shaped electrode 371) located at both ends of the rod-shaped electrodes 369 and 371 are connected to a high-frequency power source 373 via a matching device 372, to which high-frequency power is applied. The rod-shaped electrode 370, which serves as the first reference electrode, is connected to the earth, which serves as a reference potential, and is grounded, to which the reference potential is supplied. Thus, rod-shaped electrodes connected to the high-frequency power source 373 and grounded rod-shaped electrodes are alternately arranged. The rod-shaped electrode 370, which is located between the rod-shaped electrodes 369 and 371 connected to the high-frequency power source 373, serves as the grounded rod-shaped electrode and is common to both rod-shaped electrodes 369 and 371.

[0068] In other words, the grounded rod-shaped electrode 370 is positioned between rod-shaped electrodes 369 and 371 connected to a high-frequency power source 373. Rod-shaped electrodes 369 and 370, and similarly rod-shaped electrodes 371 and 370, form pairs to generate plasma. Specifically, the grounded rod-shaped electrode 370 is shared by two rod-shaped electrodes 369 and 371 adjacent to the rod-shaped electrode 370 and connected to the high-frequency power source 373. This reduces the number of reference electrodes. Furthermore, by applying high-frequency (RF) power from the high-frequency power source 373 to the rod-shaped electrodes 369 and 371, plasma is generated in the plasma generation region 324a between the rod-shaped electrodes 369 and 370 and in the plasma generation region 324b between the rod-shaped electrodes 370 and 371.

[0069] The first plasma electrode unit 377 is mainly composed of rod-shaped electrodes 369, 370, 371 and an electrode protection tube 375 (see Figure 6 , the electrode protection tube 375 is omitted from the illustration). Although the example in which the applying electrodes are two rod-shaped electrodes 369 and 371 has been described, the applying electrode may be one or three or more.

[0070] The first plasma electrode unit 377 and the second plasma electrode unit 277 constitute a plasma generation device serving as a plasma source. The matching units 272 and 372 and the high-frequency power supplies 273 and 373 may also be included in the plasma generation device. As described later, the plasma generation device functions as a plasma excitation unit (activation mechanism) that excites (activates) the gas into a plasma state.

[0071] The electrode protection tube 275 is structured so that the rod-shaped electrodes 269, 270, and 271 can be inserted into the buffer chamber 237 while being isolated from the atmosphere within the buffer chamber 237. Furthermore, the electrode protection tube 375 is structured so that the rod-shaped electrodes 369, 370, and 371 can be inserted into the buffer chamber 237 while being isolated from the atmosphere within the buffer chamber 237. If the O2 (oxygen) concentration inside the electrode protection tubes 275 and 375 is approximately the same as the O2 concentration in the outside air (atmosphere), the rod-shaped electrodes 269, 270, and 271 inserted into the electrode protection tube 275 and the rod-shaped electrodes 369, 370, and 371 inserted into the electrode protection tube 375 are oxidized by the heat from the heater 207. Therefore, by filling the electrode protection tubes 275 and 375 with inert gas such as N2 (nitrogen) gas, or using an inert gas purge mechanism to purge the interior of the electrode protection tubes 275 and 375 with inert gas such as N2 gas, the O2 concentration inside the electrode protection tubes 275 and 375 can be reduced, thereby preventing oxidation of the rod-shaped electrodes 269, 270, 271, 369, 370, and 371.

[0072] Here, the deviation of plasma generation in the reaction tube 203 is described. Figure 5 , as a comparative example, a simplified explanatory diagram showing rod-shaped electrodes 269, 270, 271L, 369, 370, and 371 arranged in a reaction tube 203 is shown, and the power ratio at the position (substrate stacking direction) in the reaction tube 203 (inside the furnace) is indicated by oblique lines. Figure 5 The up-down direction of the graph corresponds to the up-down direction of the reaction tube 203 (the extending direction of the rod-shaped electrodes) shown on the right. Figure 5 , the electrode protection tubes 275, 375, and other structures within the reaction tube 203 are omitted. The rod-shaped electrode 271L is different in length from the rod-shaped electrode 271 of this embodiment and is an applying electrode having the same length as the rod-shaped electrodes 269, 270, 369, 370, and 371.

[0073] like Figure 5 As shown, according to the knowledge of the author, it is known that there is a tendency that the power ratio of the rod-shaped electrode tip side (top side) is larger than that of the rod-shaped electrode one end side (power supply side / bottom side). As an example, when the same voltage is applied from the high frequency power supply 273, 373, Figure 5 The power ratio of the upper and lower sides is 2.0:1.6. Figure 5 As shown, when rod-shaped electrodes of the same length are arranged, the density of plasma generated on the lower side (power supply side of the rod-shaped electrode) in the reaction tube 203 is smaller than that on the upper side (front end side of the rod-shaped electrode), and the active species generated by plasma excitation are also smaller.

[0074] Therefore, if Figure 6 As shown in FIG. 2 , the lengths of the rod-shaped electrodes 269, 270, 369, 370, and 371 in the reaction tube 203 are made substantially equal, and the length of the rod-shaped electrode 271 is made shorter than the rod-shaped electrodes 269, 270, 369, 370, and 371. As a result, the density of the plasma generated on the upper side of the reaction tube 203 is higher than that of the rod-shaped electrode 271. Figure 5 As shown, the difference in density between the plasma generated on the upper and lower sides of reaction tube 203 (i.e., the variation in the distribution of plasma density) is reduced. This also reduces the variation in the amount of active species generated by plasma excitation within reaction tube 203 due to vertical position.

[0075] Furthermore, in this embodiment, two buffer structures (buffer structures 300 and 400) are provided, each equipped with a plasma generating unit. Each buffer structure 300 and 400 includes a high-frequency power supply 273 and 373 and a matching unit 272 and 372, respectively. Each high-frequency power supply 273 and 373 is connected to a controller 121, enabling plasma control for each buffer chamber 237 of each buffer structure 300 and 400. Specifically, the controller 121 monitors the impedance of each plasma generating unit and independently controls each high-frequency power supply 273 and 373. The output of the high-frequency power supply is controlled based on the impedance to prevent variations in the number of active species within each buffer chamber 237.

[0076] Compared to a single plasma generating unit, this system can supply a sufficient amount of active species to the wafer even when the high-frequency power to each plasma generating unit is reduced, improving wafer in-plane uniformity. Furthermore, by providing a high-frequency power supply for each plasma generating unit, it is easier to detect abnormalities such as disconnections in each plasma generating unit, rather than using a single high-frequency power supply to control the plasma of two plasma generating units. Furthermore, since the distance between the high-frequency power supply and each electrode can be easily adjusted, variations in power application caused by the varying distances between the electrodes and the high-frequency power supply can be easily suppressed.

[0077] Furthermore, as described above, in this embodiment, the first plasma electrode unit 377 and the second plasma electrode unit 277 are supplied with power by different high-frequency power supplies 273 and 373. Therefore, the length of the rod-shaped electrode 271 is made shorter than the lengths of the other rod-shaped electrodes 269, 270, 369, 370, and 371, and in order to reduce the vertical plasma density difference within the reaction tube 203 (or the positional variation in the amount of active species), the magnitude of the power supplied from the second high-frequency power supply, i.e., the high-frequency power supply 273, is made different from the magnitude of the power supplied from the first high-frequency power supply, i.e., the high-frequency power supply 373.

[0078] For example, if the power ratio on the lower side (the power supply side of the rod-shaped electrode) within the reaction tube 203 is greater than the power ratio on the upper side (the distal end of the rod-shaped electrode) due to the short length of the rod-shaped electrode 271, the power supplied from the high-frequency power supply 273 can be adjusted to be smaller than the power supplied from the high-frequency power supply 373. Furthermore, if the power ratio on the lower side (the power supply side of the rod-shaped electrode) within the reaction tube 203 is smaller than the power ratio on the upper side (the distal end of the rod-shaped electrode) even if the length of the rod-shaped electrode 271 is shortened, the power supplied from the high-frequency power supply 273 can be adjusted to be larger than the power supplied from the high-frequency power supply 373. By controlling the high-frequency power supply 373 and the high-frequency power supply 273 in this manner, the power distribution (the combined power distribution applied to the first plasma electrode unit 377 and the second plasma electrode unit 277) can be adjusted so that the power distribution in the extending direction of the first plasma electrode unit 377 and the second plasma electrode unit 277 is uniform. In addition, in other words, by controlling the high-frequency power supply 373 and the high-frequency power supply 273 in this way, the distribution of the active species generated by plasma excitation of the gas using the first plasma electrode unit 377 and the second plasma electrode unit 277 can be adjusted to become uniform in the extension direction of the first plasma electrode unit 377 and the second plasma electrode unit 277.

[0079] (Exhaust section)

[0080] like Figure 1 As shown, the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere within the processing chamber 201. A vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245, which serves as a pressure detector (pressure detection unit) for detecting the pressure within the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which serves as an exhaust valve (pressure adjustment unit). The APC valve 244 is configured to enable vacuum exhaust and stop of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. Furthermore, the pressure within the processing chamber 201 can be adjusted by adjusting the valve opening based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system primarily comprises the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also conceivable that the vacuum pump 246 may be included in the exhaust system. The exhaust pipe 231 is not limited to being provided in the reaction tube 203 , and may be provided in the manifold 209 similarly to the nozzles 249 a , 249 b , and 249 c .

[0081] (Peripheral devices)

[0082] A seal cap 219, serving as a furnace port cover, is installed below manifold 209 to airtightly seal the lower opening of manifold 209. Seal cap 219 is configured to abut against the lower end of manifold 209 from below in the vertical direction. Seal cap 219 is formed of a metal such as SUS and is disc-shaped. An O-ring 220b, serving as a sealing member, is installed on the upper surface of seal cap 219 to abut against the lower end of manifold 209.

[0083] A rotation mechanism 267 for rotating the wafer boat 217 is provided on the side of the seal cover 219 opposite the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cover 219 and is connected to the wafer boat 217. The rotation mechanism 267 is configured to rotate the wafers 200 by rotating the wafer boat 217. The seal cover 219 is configured to be vertically raised and lowered by a boat elevator 115, which serves as an elevating mechanism and is vertically installed outside the reaction tube 203. The boat elevator 115 is configured to load and unload the wafer boat 217 into and out of the processing chamber 201 by raising and lowering the seal cover 219.

[0084] The boat elevator 115 serves as a transport device (transport mechanism) for transporting the boat 217, or wafers 200, into and out of the processing chamber 201. Furthermore, a gate 219s, serving as a furnace port cover, is located below the manifold 209. While the seal cap 219 is being lowered by the boat elevator 115, it is capable of airtightly sealing the lower opening of the manifold 209. The gate 219s is formed of a metal such as SUS and has a disc shape. An O-ring 220c, serving as a sealing member and contacting the lower end of the manifold 209, is located on the upper surface of the gate 219s. The opening and closing movements (lifting and rotating movements, etc.) of the gate 219s are controlled by the gate opening and closing mechanism 115s.

[0085] A temperature sensor 263 is provided inside the reaction tube 203 as a temperature detector. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving a desired temperature distribution within the processing chamber 201. Similar to the nozzles 249a and 249b, the temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0086] (Control device)

[0087] Next, use Figure 7 Explain the control device. Figure 7As shown, the controller 121, which serves as a control unit (control device), is configured as a computer including a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0088] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. A control program for controlling the operation of the substrate processing device, and a process procedure that records the steps, conditions, etc. of the film forming process described later are stored in a readable manner in the storage device 121c. The process procedure is a combination that enables the controller 121 to perform each step in the various processes (film forming processes) described later to obtain a predetermined result, and functions as a program. Hereinafter, the process procedure, control program, etc. are also simply referred to as a program. In addition, the process procedure is also referred to as a process. When the word "program" is used in this specification, sometimes only the process is included, sometimes only the control program is included, or sometimes both are included. RAM121b is configured as a storage area (working area) for temporarily holding programs, data, etc. read by CPU121a.

[0089] The I / O port 121d is connected to the above-mentioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, wafer boat elevator 115, gate opening and closing mechanism 115s, high-frequency power supplies 273, 373, etc.

[0090] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c based on an operation command or the like input from the input / output device 122. In accordance with the read recipe, the CPU 121a is configured to control the rotation mechanism 267, flow rate adjustment of various gases by the MFCs 241a to 241d, opening and closing of 243a to 243d, opening and closing of the APC valve 244, pressure adjustment via the APC valve 244 using the pressure sensor 245, activation and deactivation of the vacuum pump 246, temperature adjustment of the heater 207 using the temperature sensor 263, forward and reverse rotation, rotation angle, and rotation speed adjustment of the wafer boat 217 by the rotation mechanism 267, raising and lowering of the wafer boat 217 by the boat elevator 115, opening and closing of the gate 219s by the gate opening and closing mechanism 115s, and power supply to the high-frequency power supplies 273 and 373.

[0091] The controller 121 can be constructed by installing the above-mentioned program stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as an MO, a USB memory, a semiconductor memory such as an SSD) 123 into a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording media. When the term recording medium is used in this specification, sometimes only the storage device 121c is included alone, sometimes only the external storage device 123 is included alone, or sometimes both are included. Regarding providing a program to a computer, it can be done without using the external storage device 123 but using communication means such as the Internet or a dedicated line.

[0092] (2) Substrate processing

[0093] As one of the steps in the manufacturing process of semiconductor devices, Figure 8 An example of a process for forming a film on a substrate using the substrate processing apparatus will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121 .

[0094] In this manual, for convenience, the following is sometimes used to represent Figure 8 The same description is used in the following description of the modified examples or other embodiments.

[0095] (raw material gas → reaction gas) × n

[0096] In this specification, when the term "wafer" is used, it may refer to "the wafer itself" or "the wafer and a laminate of predetermined layers, films, etc. formed on its surface." In this specification, when the term "surface of a wafer" is used, it may refer to "the surface of the wafer itself" or "the surface of a predetermined layer, etc. formed on the wafer." When it is stated in this specification that "a predetermined layer is formed on a wafer," it may refer to "forming the predetermined layer directly on the surface of the wafer itself" or "forming the predetermined layer on a layer, etc. formed on the wafer."

[0097] In addition, when the term "substrate" is used in this specification, it has the same meaning as "wafer".

[0098] (Move-in step: S1)

[0099] When a plurality of wafers 200 are loaded into the wafer boat 217 (wafer loading), the gate 219s is moved by the gate opening and closing mechanism 115s to open the lower end opening of the manifold 209 (gate opening). Figure 1 As shown, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0100] (Pressure and temperature adjustment step: S2)

[0101] The interior of the processing chamber 201, i.e., the space where the wafer 200 is located, is evacuated (depressurized) by the vacuum pump 246 to a desired pressure (vacuum level). At this time, the pressure within the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. The vacuum pump 246 is maintained in a constant operating state until at least the film formation step, described later, is completed.

[0102] Furthermore, the wafer 200 in the processing chamber 201 is heated to a desired temperature by the heater 207. At this time, feedback control of the power supply to the heater 207 is performed based on the temperature information detected by the temperature sensor 263 to achieve a desired temperature distribution within the processing chamber 201. The heater 207 continues to heat the processing chamber 201 at least until the film formation step, which will be described later, is completed.

[0103] Next, the wafer boat 217 and the wafer 200 start to rotate by the rotation mechanism 267. The wafer boat 217 and the wafer 200 continue to rotate by the rotation mechanism 267 at least until the film forming step described later is completed.

[0104] (Film forming steps: S3, S4, S5, S6)

[0105] Thereafter, the film forming step is performed by sequentially executing steps S3 , S4 , S5 , and S6 .

[0106] (Raw Material Gas Supply Steps: S3, S4)

[0107] In step S3 , a source gas is supplied to the wafer 200 in the processing chamber 201 .

[0108] Valve 243a is opened to allow the source gas to flow into gas supply pipe 232a. The source gas flow rate is adjusted by MFC 241a, and the source gas is supplied into processing chamber 201 through nozzle 249a and gas supply hole 250a, and then exhausted through exhaust pipe 231. At this time, the source gas is supplied to wafer 200. Simultaneously, valve 243c is opened to allow inert gas to flow into gas supply pipe 232c. The inert gas flow rate is adjusted by MFC 241c, and the inert gas is supplied into processing chamber 201 along with the source gas, and then exhausted through exhaust pipe 231.

[0109] To prevent the source gas from entering the nozzle 249b, the valve 243d is opened to allow the inert gas to flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 through the gas supply pipe 232d and the nozzle 249b and exhausted from the exhaust pipe 231.

[0110] As the processing conditions in this step, the following are exemplified:

[0111] Processing temperature: room temperature (25°C) ~ 550°C, preferably 400 ~ 500°C

[0112] Processing pressure: 1-4000Pa, preferably 100-1000Pa

[0113] Raw gas supply flow rate: 0.1~3slm

[0114] Raw gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds

[0115] Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm

[0116] In this specification, expressions such as "25-550°C" indicate that the lower and upper limits are included in the range. Thus, for example, "25-550°C" means "above 25°C and below 550°C." The same applies to other numerical ranges. Furthermore, in this specification, the processing temperature refers to the temperature of the wafer 200 or the temperature within the processing chamber 201, and the processing pressure refers to the pressure within the processing chamber 201. Furthermore, a gas supply flow rate of 0 slm indicates that no gas is being supplied. This also applies to the following description.

[0117] By supplying the source gas to the wafer 200 under the above conditions, a first layer is formed on the wafer 200 (underlayer on the surface). For example, when a silicon (Si)-containing gas described later is used as the source gas, a Si-containing layer is formed as the first layer.

[0118] After the first layer is formed, valve 243a is closed to stop the supply of raw material gas into the processing chamber 201. At this time, APC valve 244 remains open, and the processing chamber 201 is evacuated by vacuum pump 246 to exhaust any remaining unreacted raw material gas or reaction byproducts that have contributed to the formation of the Si-containing layer from the processing chamber 201 (S4). Furthermore, valves 243c and 243d remain open to supply an inert gas into the processing chamber 201. The inert gas acts as a purge gas.

[0119] As the raw material gas, for example, a gas containing Si and halogen, i.e., a halosilane gas, can be used. Halogen includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. As the halosilane gas, for example, a chlorosilane gas containing Si and Cl can be used.

[0120] More specifically, as the silane raw material gas, for example, chlorosilane (SiH3Cl, abbreviated as MCS) gas, trichlorosilane (SiHCl3, abbreviated as TCS) gas, tetrachlorosilane (SiCl4, abbreviated as STC) gas, hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas, octachlorotrisilane (Si3Cl8, abbreviated as OCTS) gas, and the like can be used. Furthermore, as the silane raw material gas, tetrafluorosilane (SiF4) gas, tetrabromosilane (SiBr4) gas, tetraiodosilane (SiI4) gas, and the like can be used. In other words, as the silane raw material gas, various halogenated silane gases, such as chlorosilane gases, fluorosilane gases, bromosilane gases, and iodosilane gases, can be used.

[0121] In addition, as silane raw material gas, for example, aminosilane gases such as tetrakis(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as: 4DMAS) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as: 3DMAS) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as: BDEAS) gas, and di-tert-butylaminosilane (SiH2[NH(C4H9)]2, abbreviated as: BTBAS) gas can be used.

[0122] As the inert gas, for example, nitrogen (N2) gas can be used. In addition, rare gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, and xenon (Xe) gas can be used. As the inert gas, one or more of these can be used. This also applies to the various steps described below.

[0123] (Reaction Gas Supply Steps: S5, S6)

[0124] After the source gas supply step is completed, the reaction gas in which plasma is excited is supplied to the wafer 200 in the processing chamber 201 ( S5 ).

[0125] In this step, valves 243b through 243d are opened and closed in the same order as valves 243a, 243c, and 243d in step S3. The flow rate of the reactant gas is adjusted by MFC 241b, and the reactant gas is supplied to the buffer chamber 237 via nozzles 249b and 249c. At this time, high-frequency power is supplied (applied) to the rod-shaped electrodes 269, 270, and 271 from a high-frequency power supply 273. Furthermore, high-frequency power is supplied (applied) to the rod-shaped electrodes 369, 370, and 371 from a high-frequency power supply 373. The reactant gas supplied to each buffer chamber 237 is excited into a plasma state within the processing chamber 201, supplied as active species to the wafer 200, and then exhausted through the exhaust pipe 231.

[0126] As the processing conditions in this step, the following are exemplified:

[0127] Processing temperature: room temperature (25°) ~ 550°C, preferably 400 ~ 500°C

[0128] Processing pressure: 10~300Pa

[0129] Reaction gas supply flow rate: 0.1~10slm

[0130] Reaction gas supply time: 10 to 100 seconds, preferably 1 to 50 seconds

[0131] Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm

[0132] RF power: 50~1000W

[0133] RF frequency: 13.56MHz or 27MHz.

[0134] By exciting the reaction gas into a plasma state under the above conditions and supplying it to the chip 200, the first layer formed on the surface of the chip 200 is modified into the second layer by utilizing the action of active species generated in the plasma that are electrically neutral with ions.

[0135] When an oxidizing gas (oxidant) such as an oxygen (O)-containing gas is used as the reaction gas, the oxygen-containing gas is excited into a plasma state to generate oxygen-containing active species, which are then supplied to the wafer 200. At this time, as a modification process, the first layer formed on the surface of the wafer 200 is oxidized by the action of the oxygen-containing active species. In this case, when the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0136] Furthermore, when a nitriding gas (nitriding agent) such as a gas containing nitrogen (N) and hydrogen (H) is used as a reaction gas, for example, the N and H-containing gas is excited into a plasma state to generate N and H-containing active species, which are then supplied to the wafer 200. In this case, as a modification process, the first layer formed on the surface of the wafer 200 is nitrided by the action of the N and H-containing active species. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0137] After the first layer is converted into the second layer, valve 243b is closed to stop the supply of the reaction gas. Furthermore, the supply of high-frequency power to rod-shaped electrodes 269, 271, 369, and 371 is stopped. Then, the reaction gas and reaction byproducts remaining in processing chamber 201 are exhausted from processing chamber 201 using the same process steps and conditions as step S4 (S6). Alternatively, step S6 can be omitted and replaced with a reaction gas supply step.

[0138] As described above, for example, O-containing gases and N- and H-containing gases can be used. Examples of O-containing gases include oxygen (O₂) gas, nitrous oxide (N₂O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO₂) gas, ozone (O₃) gas, hydrogen peroxide (H₂O₂) gas, water vapor (H₂O), ammonium hydroxide (NH₄(OH)) gas, carbon monoxide (CO) gas, and carbon dioxide (CO₂) gas. Nitrogen-containing gases such as ammonia (NH₃) gas, diimide (N₂H₂) gas, hydrazine (N₂H₄) gas, and N₃H₂ gas can be used as N- and H-containing gases. One or more of these gases can be used as the reactant gas.

[0139] As the inert gas, for example, the various inert gases exemplified in step S4 can be used.

[0140] (Execute the scheduled number of times: S7)

[0141] The case where these steps are performed non-simultaneously, i.e., asynchronously, in the order of steps S3, S4, S5, and S6 is considered as one cycle. By performing this cycle a predetermined number of times (n times, where n is an integer greater than or equal to 1), i.e., more than one time, a film of a predetermined composition and a predetermined film thickness can be formed on the wafer 200. It is preferred that the above cycle be repeated multiple times. That is, it is preferred that the thickness of the second layer formed in each cycle be smaller than the desired film thickness, and the above cycle be repeated multiple times until the film thickness formed by stacking the second layer reaches the desired film thickness. In the case where, for example, a Si-containing layer is formed as the first layer and a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. In addition, in the case where, for example, a Si-containing layer is formed as the first layer and a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0142] (Atmospheric pressure recovery step: S8)

[0143] After the film formation process is completed, inert gas is supplied into the processing chamber 201 from the gas supply pipes 232c and 232d, respectively, and then exhausted from the exhaust pipe 231. Thus, the inert gas is purged into the processing chamber 201, and the reaction gas and the like remaining in the processing chamber 201 are exhausted from the processing chamber 201 (inert gas purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure: S8).

[0144] (Moving out step: S9)

[0145] Afterwards, the sealing cover 219 is lowered by the wafer boat elevator 115, opening the lower end of the manifold 209. The processed wafers 200, supported by the wafer boat 217, are then unloaded from the lower end of the manifold 209 to the exterior of the reaction tube 203 (wafer unloading). After the wafer boat is unloaded, the gate 219s is moved, sealing the lower end opening of the manifold 209 with the gate 219s via the O-ring 220c (gate closing). After the processed wafers 200 are unloaded from the reaction tube 203, they are removed from the wafer boat 217 (wafer unloading). Alternatively, an empty wafer boat 217 can be loaded into the processing chamber 201 after wafer unloading.

[0146] During substrate processing, the furnace pressure is preferably controlled within a range of 10 Pa to 300 Pa. This is because when the furnace pressure is below 10 Pa, the mean free path of gas molecules becomes longer than the plasma's Debye length, significantly increasing the amount of plasma striking the furnace walls, making it difficult to suppress particle generation. Furthermore, when the furnace pressure exceeds 300 Pa, plasma generation efficiency reaches saturation. Therefore, even if reactant gas is supplied, the amount of plasma generated remains unchanged, resulting in wasteful consumption of reactant gas. Furthermore, the mean free path of gas molecules is shortened, impairing the efficiency of transporting plasma active species to the wafer.

[0147] (3) Effects of this embodiment

[0148] According to this embodiment, one or more of the following effects can be obtained.

[0149] (a) By making the lengths of the rod-shaped electrodes 269 , 369 , and 371 different from the length of the rod-shaped electrode 271 , the amount of active species generated in the buffer chamber 237 and supplied into the processing chamber 201 can be made uniform among the plurality of substrates.

[0150] (b) By adjusting the lengths of the rod-shaped electrodes 269 , 271 , 369 , and 371 , the supply amount of the active species generated in the buffer chamber 237 and supplied into the processing chamber 201 can be adjusted to be uniform among the plurality of substrates.

[0151] (c) By adjusting the lengths of the rod-shaped electrodes 269 , 271 , 369 , and 371 , the supply amount of active species generated in the buffer chamber 237 and supplied to the processing chamber 201 can be adjusted to be vertically symmetrical.

[0152] (d) By adjusting the power supplied to the first plasma electrode unit 377 and the second plasma electrode unit 277 , the amount of active species supplied into the processing chamber 201 can be adjusted to be vertically symmetrical.

[0153] (Variation 1)

[0154] Then, based on Figure 9 Modification 1 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0155] In the above embodiment, the lengths of the rod-shaped electrodes 369, 370, 371 of the first plasma electrode unit 377 and the rod-shaped electrodes 269, 270 of the second plasma electrode unit 277 are substantially the same. Figure 9More specifically, the length of the rod-shaped electrode 371 is shorter than the rod-shaped electrodes 369, 370, 269, and 270, and longer than the rod-shaped electrode 271. The first plasma electrode unit of this modification is denoted by reference numeral 377-1.

[0156] By setting the length of the rod-shaped electrode 371-1, the power distribution in the vertical direction of the processing chamber 201 can be adjusted by the first plasma electrode unit 377-1 alone. As a result, the variation in the amount of active species supplied into the processing chamber 201 can be adjusted.

[0157] (Variation 2)

[0158] Then, based on Figure 10 A second modification of the present embodiment will be described. In this modification, only the parts that differ from the above embodiment will be described, and description of the same parts will be omitted.

[0159] In the above embodiment, two application electrodes (rod-shaped electrodes 369 and 371) are provided in the first plasma electrode unit 377. However, in this modification, as shown in FIG. Figure 10 As shown, the rod-shaped electrode 371 as the second electrode is not provided. The first plasma electrode unit of this modification is denoted by reference numeral 377-2.

[0160] Thus, by providing a single application electrode in the first plasma electrode unit 377 - 2 , the first plasma electrode unit 377 - 2 can be simplified, and the variation in the amount of active species supplied into the processing chamber 201 can be adjusted.

[0161] (Variation 3)

[0162] Then, based on Figure 11 Modification 3 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0163] In the above embodiment, the lengths of the rod-shaped electrodes 369, 370, 371 of the first plasma electrode unit 377 and the rod-shaped electrodes 269, 270 of the second plasma electrode unit 277 are substantially the same. Figure 11As shown, the lengths of rod-shaped electrodes 269 and 270 are different from those of rod-shaped electrodes 369, 370, and 371. More specifically, the lengths of rod-shaped electrodes 269 and 270 are set to be approximately the same, and the lengths of rod-shaped electrodes 269 and 270 are shorter than those of rod-shaped electrodes 369, 370, and 371, and longer than rod-shaped electrode 271. In this modification, rod-shaped electrodes 269 and 270 of the embodiment are indicated by reference numerals 269-3 and 270-3. Furthermore, the second plasma electrode unit of this modification is indicated by reference numeral 277-3.

[0164] By setting the lengths of the rod-shaped electrodes 269-3 and 270-3 in this manner, it is possible to increase the power distribution on the lower side of the processing chamber 201. This allows for adjustment of variations in the amount of active species supplied into the processing chamber 201.

[0165] (Variation 4)

[0166] Then, based on Figure 12 Modification 4 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0167] In the above embodiment, the lengths of the rod-shaped electrodes 369, 370, 371 of the first plasma electrode unit 377 and the rod-shaped electrodes 269, 270 of the second plasma electrode unit 277 are substantially the same. Figure 12 As shown, the lengths of rod-shaped electrodes 269 and 270 are made substantially the same as those of rod-shaped electrode 271. Specifically, the lengths of rod-shaped electrodes 269, 270, and 271 are made substantially the same, and these rod-shaped electrodes 269, 270, and 271 are made shorter than rod-shaped electrodes 369, 370, and 371. In this modification, rod-shaped electrodes 269 and 270 of the embodiment are indicated by reference numerals 269-4 and 270-4. Furthermore, the second plasma electrode unit of this modification is indicated by reference numeral 277-4.

[0168] By setting the lengths of the rod-shaped electrodes 269 - 4 and 270 - 4 in this manner, it is possible to adjust the variation in the amount of active species supplied into the processing chamber 201 .

[0169] (Variant 5)

[0170] Then based on Figure 13 Modification 5 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0171] In the above embodiment, two application electrodes (rod-shaped electrodes 269 and 271) are provided in the second plasma electrode unit 277. However, in this modification, as shown in FIG. Figure 13As shown, the rod-shaped electrode 269 is not provided. In addition, the length of the rod-shaped electrode 270 is made substantially the same as that of the rod-shaped electrode 271. The rod-shaped electrode 270 of this modification is denoted by reference numeral 270-5, and the second plasma electrode unit is denoted by reference numeral 277-5.

[0172] Thus, by providing a single application electrode in the second plasma electrode unit 277 - 5 , the structure of the second plasma electrode unit 277 - 5 can be simplified, and the variation in the amount of active species supplied into the processing chamber 201 can be adjusted.

[0173] (Variation 6)

[0174] Then, based on Figure 14 Modification 6 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0175] In the above embodiment, two application electrodes (rod-shaped electrodes 369 and 371) are provided in the first plasma electrode unit 377, and two application electrodes (rod-shaped electrodes 269 and 271) are provided in the second plasma electrode unit 277. In this modification, Figure 14 As shown, the rod-shaped electrodes 269 and 369 are not provided. The first plasma electrode unit of this modification is denoted by reference numeral 377-6, and the second plasma electrode unit is denoted by reference numeral 277-6.

[0176] By using only one application electrode in each of the first and second plasma electrode units 377-6 and 277-6, the first and second plasma electrode units 377-6 and 277-6 can be simplified, and the variation in the amount of active species supplied into the processing chamber 201 can be adjusted.

[0177] (Variant 7)

[0178] Then, based on Figure 15 Modification 7 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0179] In the above embodiment, the buffer structures 300 and 400 are respectively formed with the buffer chambers 237 which are divided into sections. Figure 15 As shown, radial walls of the buffer structures 300 and 400 facing each other across the exhaust pipe 231 are removed, and the circumferential walls of the removed portions are extended and integrated with each other to form a single buffer chamber 237 .

[0180] In this way, the first plasma electrode unit 377 and the second plasma electrode unit 277 can be accommodated in the same buffer structure.

[0181] (Variation 8)

[0182] Then, based on Figure 16 Modification 8 of this embodiment will be described. In this modification, only the parts that are different from the above embodiment will be described below, and the description of the same parts will be omitted.

[0183] In the above embodiment, the first plasma electrode unit 377 and the second plasma electrode unit 277 are provided in the buffer chamber 237 inside each of the buffer structures 300 and 400 formed in the reaction tube 203. In this modification, Figure 16 As shown, a first plasma electrode unit 377 and a second plasma electrode unit 277 are provided on the outside of the reaction tube 203 .

[0184] Three recesses 81, 82, and 83 are provided at equal intervals on the wall of the portion of the reaction tube 203 that constitutes the buffer structure 300. The outer surface of the reaction tube 203 is concave and extends in the vertical direction. Similarly, three recesses 84, 85, and 86 are provided at equal intervals on the wall of the portion of the reaction tube 203 that constitutes the buffer structure 400.

[0185] Rod-shaped electrode 269 and its surrounding electrode protection tube 275 are arranged along recess 81, rod-shaped electrode 270 and its surrounding electrode protection tube 275 are arranged along recess 82, and rod-shaped electrode 271 and its surrounding electrode protection tube 275 are arranged along recess 83. Furthermore, rod-shaped electrode 369 and its surrounding electrode protection tube 375 are arranged along recess 84, rod-shaped electrode 370 and its surrounding electrode protection tube 375 are arranged along recess 85, and rod-shaped electrode 371 and its surrounding electrode protection tube 375 are arranged along recess 86.

[0186] Nozzles 249b and 249c for supplying reaction gas each branch into two. Nozzles 249b and 249c are disposed outside the buffer chamber 237 along radially extending walls of the reaction tube 203 that form the buffer structures 300 and 400. Gas supply holes 250b and 250c of nozzles 249b and 249c open toward holes H formed in adjacent walls of the buffer structures 300 and 400, respectively.

[0187] (Variant 9)

[0188] Then, based on Figure 17 Modification 9 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0189] In the above embodiment, the first plasma electrode unit 377 and the second plasma electrode unit 277 are provided in the buffer chamber 237 inside each of the buffer structures 300 and 400 formed in the reaction tube 203. In this modification, Figure 17 As shown, the first plasma electrode unit 377 and the second plasma electrode unit 277 are provided without walls constituting the buffer structures 300 and 400 and without partitioning the processing chamber 201 .

[0190] (Variation 10)

[0191] Then, based on Figure 18 A modification 10 of the present embodiment will be described. In this modification, only the parts that differ from the above embodiment will be described below, and description of the same parts will be omitted.

[0192] In the above-mentioned modification 8, the first plasma electrode unit 377 and the second plasma electrode unit 277 are provided at positions corresponding to the buffer structures 300 and 400 outside the reaction tube 203. However, in this modification, as shown in FIG. Figure 18 As shown, the buffer structures 300 and 400 are not provided. That is, the buffer structures 300 and 400 are removed from the eighth modification.

[0193] (Variation 11)

[0194] Then, based on Figure 19 Modification 11 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0195] In the above embodiment, the buffer structure 300 and the buffer structure 400 are arranged symmetrically with respect to a straight line passing through the exhaust pipe 231 and the center of the reaction tube 203, with the exhaust pipe 231 interposed therebetween. In this modified example, the buffer structure 300 and the buffer structure 400 are arranged asymmetrically with respect to a straight line passing through the center of the exhaust pipe 231 and the center of the reaction tube 203, with the exhaust pipe 231 interposed therebetween. More specifically, the buffer structure 400 is arranged at a position opposite to the exhaust pipe 231, and two branched gas supply pipes 232a are arranged circumferentially on both sides of the buffer structure 400. In addition, the buffer structure 300 is arranged circumferentially between the gas supply pipe 232a and the exhaust pipe 231. Furthermore, the second plasma electrode unit 277 is arranged in the buffer structure 300, and the first plasma electrode unit 377 is arranged in the buffer structure 400.

[0196] In this variation, the first plasma electrode unit 377 with a large amount of active species generated is arranged at a position opposite to the exhaust pipe 231, and the second plasma electrode unit 277 with a small amount of active species generated is set on the side of the exhaust pipe 231, so that the deviation of the amount of active species supplied to the processing chamber 201 can be adjusted.

[0197] Regarding the circumferential position of the first plasma electrode unit 377 and the second plasma electrode unit 277 in the processing chamber 201, the amount of active species generated by each plasma electrode unit, the distribution of the amount of active species in the electrode extension direction, etc. can be considered, and the distribution of the processing amount within the substrate surface processed using the active species (such as film thickness distribution, etc.) and / or the distribution of the processing amount between substrates can be arbitrarily set to become the desired distribution (such as uniform distribution).

[0198] (Variation 12)

[0199] Then, based on Figure 20 Modification 12 of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0200] In the above embodiment, the first plasma electrode unit 377 and the second plasma electrode unit 277 are provided in the buffer chamber 237 inside each of the buffer structures 300 and 400 formed in the reaction tube 203. In this modification, Figure 20 As shown, a first plasma electrode unit 377 and a second plasma electrode unit 277 are provided on the outside of the reaction tube 203 .

[0201] Protrusions 87 and 88 are formed on the two opposing side walls of the reaction tube 203 across the exhaust pipe 231. These protrusions extend radially outward and vertically. Spaces 87A and 88A are defined within these protrusions, respectively. A nozzle 249b is positioned in space 87A, and a nozzle 249c is positioned in space 88A. Gas supply holes 250b and 250c in nozzles 249b and 249c, respectively, open radially inward of the reaction tube 203.

[0202] In this modification, similar to Modification 6, rod-shaped electrodes 269 and 369 are not provided. In this modification, first plasma electrode unit 377 includes rod-shaped electrodes 370 and 371 and electrode protection tube 275, while second plasma electrode unit 277 includes rod-shaped electrodes 270 and 271 and electrode protection tube 275. Rod-shaped electrodes 370 and 371 are arranged circumferentially with protrusion 88 interposed therebetween, while rod-shaped electrodes 270 and 271 are arranged circumferentially with protrusion 87 interposed therebetween. In this modification, rod-shaped electrodes 270, 271, 370, and 371 have a rectangular cross-sectional shape.

[0203] Rod-shaped electrodes 270, 271, 370, 371 are arranged such that the long sides of their rectangular cross-sections follow protrusions 87, 88 and the short sides follow the outer circumference of reaction tube 203. Electrode protection tube 275 covers the portions of rod-shaped electrodes 270, 271, 370, 371 not surrounded by the wall of reaction tube 203.

[0204] The embodiments of the present disclosure have been described in detail above. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present disclosure.

[0205] For example, in the above embodiments, the reactants are supplied after the raw materials. This disclosure is not limited to this method, and the order of supplying the raw materials and reactants can be reversed. That is, the raw materials can also be supplied after the reactants. By changing the supply order, the film quality and composition ratio of the formed film can be changed.

[0206] The present disclosure is applicable not only to the case of forming SiO films and SiN films on the chip 200, but also to the case of forming Si-based oxide films such as silicon carbide films (SiOC films), silicon carbonitride oxide films (SiOCN films), and silicon oxynitride films (SiON films) on the chip 200.

[0207] For example, in addition to or in addition to the above-mentioned gases, nitrogen (N)-containing gases such as ammonia (NH3) gas, diimide (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas, carbon (C)-containing gases such as propylene (C3H6) gas, and boron (B)-containing gases such as boron trichloride (BCl3) gas can be used to form, for example, SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, and BCN films. The order in which the gases flow can be appropriately changed. When forming these films, the film formation can also be carried out under the same processing conditions as in the above-mentioned embodiment, and the same effects as in the above-mentioned embodiment can be obtained. In this case, the above-mentioned reaction gases can be used as the oxidant of the reaction gas.

[0208] Furthermore, the present disclosure can also be appropriately applied when a metal oxide film or metal nitride film containing a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), or tungsten (W) is formed on the wafer 200. That is, a TiO film, a TiOC film, a TiOCN film, a TiON film, a TiN film, a TiSiN film, a TiBN film, a TiBCN film, a ZrO film, a ZrOC film, a ZrOCN film, a ZrON film, a ZrN film, a ZrSiN film, a ZrBN film, a ZrBCN film, an HfO film, a HfOC film, a HfOCN film, a HfON film, a HfN film, a HfSiN film, a HfBN film, a HfBCN film, a TaO film, a TaOC film, a TaOCN film, a TaON film, a TaN film, a TaSiN film, a TaBN film, or a TaBCN film is formed on the wafer 200. The present disclosure can also be appropriately applied to the following cases: a) a WO film, a WN film, a WSiN film, a NbBN film, a NbBCN film, b) an AlO film, a NbOC film, a NbOCN film, a NbON film, a NbN film, a NbSiN film, a NbBN film, a NbBCN film, an AlO film, an AlOC film, an AlOCN film, an AlON film, an AlN film, an AlSiN film, an AlBN film, an AlBCN film, a MoO film, a MoOC film, a MoOCN film, a MoON film, a MoN film, a MoSiN film, a MoBN film, a MoBCN film, a WO film, a WOC film, a WOCN film, a WON film, a WN film, a WSiN film, a WBN film, a WBCN film, and the like.

[0209] In these cases, for example, as raw material gases, tetrakis(dimethylamino)titanium (Ti[N(CH3)2]4, abbreviated as: TDMAT) gas, tetrakis(ethylmethylamino)hafnium (Hf[N(C2H5)(CH3)]4, abbreviated as: TEMAH) gas, tetrakis(ethylmethylamino)zirconium (Zr[N(C2H5)(CH3)]4, abbreviated as: TEMAZ) gas, trimethylaluminum (Al(CH3)3, abbreviated as: TMA) gas, titanium tetrachloride (TiCl4) gas, hafnium tetrachloride (HfCl4) and other gases can be used.

[0210] In other words, the present disclosure can be suitably applied to the formation of semi-metallic films containing semi-metallic elements and metallic films containing metallic elements. The processing steps and processing conditions for these film formation processes can be the same as those described in the above-described embodiment and modified examples. In these cases, the same effects as those of the above-described embodiment can be achieved.

[0211] The processes used for film formation are preferably prepared individually according to the process content and pre-stored in storage device 121c via electrical communication lines or external storage device 123. Furthermore, when starting various processes, CPU 121a preferably selects an appropriate process from the multiple processes stored in storage device 121c based on the process content. This allows a single substrate processing apparatus to universally and reproducibly form thin films of various film types, composition ratios, film qualities, and film thicknesses. This also reduces the burden on operators, prevents operational errors, and allows for the prompt initiation of various processes.

[0212] The above-described process is not limited to creating a new process. For example, it can also be prepared by modifying an existing process already installed in a substrate processing apparatus. When modifying a process, the modified process can be installed in the substrate processing apparatus via an electrical communication line or a recording medium containing the modified process. Alternatively, the input / output device 122 of the existing substrate processing apparatus can be used to directly modify the existing process installed in the apparatus.

[0213] Description of Reference Numerals

[0214] 200 wafers (substrates)

[0215] Processing Room 201

[0216] 202 processing furnace (substrate processing equipment)

[0217] 232b Gas supply pipe (gas supply unit)

[0218] 249b, 249c nozzles (gas supply unit)

[0219] 270 rod electrode (second reference electrode)

[0220] 269 ​​rod-shaped electrode (fourth application electrode)

[0221] 271 rod-shaped electrode (third application electrode)

[0222] 277 second plasma electrode unit

[0223] 370 rod electrode (first reference electrode)

[0224] 369 rod-shaped electrode (first application electrode)

[0225] 371 rod-shaped electrode (second application electrode)

[0226] 377 first plasma electrode unit

[0227] S1 loading step (substrate loading process, substrate loading order)

[0228] S5 and S6 are reaction gas supply steps (substrate processing step, substrate processing sequence).

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; a gas supply unit for supplying gas into the processing chamber; a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied, for exciting the gas into plasma; as well as The second plasma electrode unit includes a second reference electrode given a reference potential, a third application electrode applied with high-frequency power and having a length different from that of the first application electrode and the second application electrode, and a fourth application electrode applied with high-frequency power and having a length different from that of the third application electrode, for plasma excitation of the gas.

2. The substrate processing apparatus according to claim 1, wherein: The length of the fourth applying electrode is equal to the length of the second reference electrode.

3. The substrate processing apparatus according to claim 1, wherein: The third applying electrode is shorter than either the first applying electrode or the second applying electrode.

4. The substrate processing apparatus according to claim 1, wherein: The third applying electrode is shorter than the fourth applying electrode.

5. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; a gas supply unit for supplying gas into the processing chamber; a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied, for exciting the gas into plasma; as well as The second plasma electrode unit includes a second reference electrode given a reference potential and a third application electrode applied with high frequency power and having a length different from that of the first application electrode and the second application electrode and shorter than that of the second reference electrode, for exciting the gas into plasma.

6. The substrate processing apparatus according to claim 1, wherein: The fourth applying electrode has a length equal to a length of at least one of the first applying electrode and the second applying electrode.

7. The substrate processing apparatus according to claim 1, wherein: The length of the first applying electrode is equal to the length of the first reference electrode.

8. The substrate processing apparatus according to claim 1, wherein: The first plasma electrode unit includes the first application electrode and the second application electrode.

9. The substrate processing apparatus according to claim 8, wherein: The length of the second applying electrode is equal to the length of the first applying electrode.

10. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; a gas supply unit for supplying gas into the processing chamber; a first plasma electrode unit comprising a first reference electrode to which a reference potential is applied, a first application electrode to which high-frequency power is applied, and a second application electrode to which high-frequency power is applied and which is shorter than the first application electrode, for exciting the gas into plasma; as well as The second plasma electrode unit includes a second reference electrode to which a reference potential is applied, and a third application electrode to which high-frequency power is applied and having a length different from that of the first application electrode and the second application electrode, and excites the gas into plasma.

11. The substrate processing apparatus according to claim 1, wherein: The fourth applying electrode has a length different from both the first applying electrode and the second applying electrode.

12. The substrate processing apparatus according to claim 11, wherein: The fourth applying electrode is shorter than any of the first applying electrode and the second applying electrode.

13. The substrate processing apparatus according to claim 1, wherein The substrate processing device comprises: a first high-frequency power supply that supplies high-frequency power to at least one of the first applying electrode and the second applying electrode; and A second high-frequency power supply, which is different from the first high-frequency power supply, supplies high-frequency power to the third applying electrode.

14. The substrate processing apparatus according to claim 1, wherein The substrate processing device comprises: a first high-frequency power supply that supplies high-frequency power to the first plasma electrode unit; and A second high-frequency power supply, which is different from the first high-frequency power supply, supplies high-frequency power to the second plasma electrode unit.

15. The substrate processing apparatus according to claim 14, wherein: The substrate processing apparatus includes a control unit, The control unit is configured to control the first high-frequency power supply and the second high-frequency power supply so that the distribution of the power applied to the first plasma electrode unit and the second plasma electrode unit in the extension direction of the first plasma electrode unit and the second plasma electrode unit becomes uniform after the distribution of the power applied to the first plasma electrode unit and the distribution of the power applied to the second plasma electrode unit are combined.

16. The substrate processing apparatus according to claim 14, wherein: The substrate processing apparatus includes a control unit, The control unit is configured to control the first high-frequency power supply and the second high-frequency power supply so that the distribution of the amount of active species generated by plasma excitation of the gas using the first plasma electrode unit and the second plasma electrode unit becomes uniform in the extension direction of the first plasma electrode unit and the second plasma electrode unit.

17. The substrate processing apparatus according to claim 1, wherein: The first plasma electrode unit and the second plasma electrode unit are disposed outside a reaction tube that contains the process chamber inside.

18. A plasma generating device, characterized in that: have: A first plasma electrode unit includes at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied, and excites the gas into plasma; as well as The second plasma electrode unit includes a second reference electrode given a reference potential, a third application electrode applied with high-frequency power and having a length different from that of the first application electrode and the second application electrode, and a fourth application electrode applied with high-frequency power and having a length different from that of the third application electrode, for plasma excitation of the gas.

19. A method for manufacturing a semiconductor device, characterized in that: The substrate processing apparatus includes: a processing chamber that processes a substrate; a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied; as well as a second plasma electrode unit including a second reference electrode to which a reference potential is applied, a third application electrode to which high-frequency power is applied and which has a length different from that of the first application electrode and the second application electrode, and a fourth application electrode to which high-frequency power is applied and which has a length different from that of the third application electrode, The method for manufacturing a semiconductor device comprises: a substrate carrying-in step of carrying the substrate into the processing chamber of the substrate processing apparatus; and In the substrate processing step, the first plasma electrode unit and the second plasma electrode unit are used to excite a gas into plasma to generate active species, and the active species are supplied to the substrate to process the substrate.

20. A substrate processing method, characterized in that: The substrate processing apparatus includes: a processing chamber that processes a substrate; a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied; as well as a second plasma electrode unit including a second reference electrode to which a reference potential is applied, a third application electrode to which high-frequency power is applied and which has a length different from that of the first application electrode and the second application electrode, and a fourth application electrode to which high-frequency power is applied and which has a length different from that of the third application electrode, The substrate processing method comprises: a substrate carrying-in step of carrying the substrate into the processing chamber of the substrate processing apparatus; and In the substrate processing step, the first plasma electrode unit and the second plasma electrode unit are used to excite a gas into plasma to generate active species, and the active species are supplied to the substrate to process the substrate.

21. A computer-readable recording medium having a program recorded thereon, characterized in that: The substrate processing apparatus includes: a processing chamber to which gas is supplied and to which a substrate is processed; a first plasma electrode unit including at least one of a first applying electrode and a second applying electrode to which high-frequency power is applied, and a first reference electrode to which a reference potential is applied; as well as a second plasma electrode unit including a second reference electrode to which a reference potential is applied, a third application electrode to which high-frequency power is applied and which has a length different from that of the first application electrode and the second application electrode, and a fourth application electrode to which high-frequency power is applied and which has a length different from that of the third application electrode, The program causes the substrate processing apparatus to execute the following steps via a computer: a substrate carrying-in step of carrying the substrate into the processing chamber of the substrate processing apparatus; and In the substrate processing step, the first plasma electrode unit and the second plasma electrode unit are used to excite the gas into plasma to generate active species, and the active species are supplied to the substrate to process the substrate.

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