Substrate processing equipment

Abstract

The present invention provides a substrate processing device capable of suppressing deviations in the in-plane temperature distribution of a substrate. The substrate processing device according to an embodiment of the present invention includes: a loading portion including a loading table capable of loading a substrate and capable of rotating the loaded substrate; a cooling nozzle capable of supplying cooling gas to the space between the loading table and the substrate; a liquid supply portion capable of supplying liquid to the surface of the substrate opposite to the loading table; and a dispersion plate disposed on the cooling gas discharge side of the cooling nozzle. The dispersion plate includes a first hole extending through the thickness direction. When viewed from the direction along the central axis of the cooling nozzle, the first hole is disposed at a position overlapping with the central axis of the cooling nozzle.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus. Background Art

[0002] As a method for removing contaminants such as particles adhering to the surface of substrates such as imprint templates, photolithography masks, and semiconductor wafers, a freeze cleaning method has been proposed.

[0003] In the freeze cleaning method, for example, when using pure water as the cleaning liquid, pure water and cooling gas are first supplied to the surface of a rotating substrate. The pure water supply is then stopped, and a portion of the supplied pure water is discharged, forming a water film on the substrate surface. The water film is frozen by the cooling gas supplied to the substrate. As the water film freezes to form an ice film, contaminants such as particles are captured by the ice film, thereby being separated from the substrate surface. Pure water is then supplied to the ice film to melt it, removing the contaminants from the substrate surface along with the pure water.

[0004] However, when cooling gas is supplied to the side of the substrate where the water film is formed, freezing begins on the surface side of the water film (the side of the water film opposite to the substrate side). When freezing begins on the surface side of the water film, it becomes difficult to separate impurities attached to the substrate surface.

[0005] Therefore, a technique has been proposed for supplying cooling gas to the back surface of the substrate (the surface of the substrate opposite to the side where the water film is formed).

[0006] (For example, see Patent Document 1)

[0007] However, simply supplying cooling gas to the back surface of the substrate may cause temperature distribution deviation within the substrate surface. If temperature distribution deviation occurs within the substrate surface, it is difficult to improve the removal rate of contaminants.

[0008] Therefore, the industry desires to develop a substrate processing apparatus that can suppress the variation in temperature distribution within the surface of the substrate.

[0009] [Prior art literature]

[0010] [Patent Document]

[0011] [Patent Document 1] Japanese Patent Application Publication No. 2018-026436 Summary of the Invention

[0012] [Problems to be solved by the invention]

[0013] The problem to be solved by the present invention is to provide a substrate processing apparatus capable of suppressing the deviation of the temperature distribution within the surface of the substrate.

[0014] [Technical means to solve the problem]

[0015] A substrate processing apparatus according to an embodiment includes: a loading unit including a loading table capable of loading a substrate and capable of rotating the loaded substrate; a cooling nozzle capable of supplying cooling gas to the space between the loading table and the substrate; a liquid supply unit capable of supplying liquid to the surface of the substrate opposite the loading table; and a dispersion plate disposed on the cooling gas discharge side of the cooling nozzle. The dispersion plate includes a first hole extending through the thickness of the plate. The first hole is disposed at a position overlapping the central axis of the cooling nozzle when viewed along the central axis of the cooling nozzle.

[0016] [Effects of the Invention]

[0017] According to the embodiment of the present invention, it is possible to provide a substrate processing apparatus capable of suppressing variations in temperature distribution within a substrate surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram for illustrating the substrate processing apparatus according to this embodiment.

[0019] Figure 2 (a) is a schematic plan view for illustrating the dispersion portion. Figure 2 (b) is Figure 2 AA line cross-sectional view of the dispersion portion in (a).

[0020] Figure 3 This is a timing chart for illustrating the operation of the substrate processing apparatus.

[0021] Figure 4 This is a graph showing the temperature of the frozen film immediately before thawing from the center to the periphery of the substrate.

[0022] Figure 5 This is a graph showing the removal rate from the center to the periphery of the substrate.

[0023] Figure 6 This is a schematic cross-sectional view of a dispersion unit for illustrating another embodiment.

[0024] Figure 7 This is a schematic cross-sectional view of a dispersion unit for illustrating another embodiment.

[0025] Figure 8 (a) is a schematic diagram for illustrating a dispersion unit according to another embodiment. Figure 8 (b) is a perspective view for illustrating a blade. Figure 8 (c) is Figure 8 Cross-sectional view of the dispersion portion taken along line BB in (a). Figure 8 (d) is Figure 8 Cross-sectional view of the dispersion portion taken along line CC in (a).

[0026] Figure 9 This is a schematic perspective view of a support portion for illustrating another embodiment.

[0027] Figure 10 This is a schematic cross-sectional view of an expanded diameter portion for illustrating another embodiment.

[0028] Figure 11 This is a schematic cross-sectional view of an expanded diameter portion for illustrating another embodiment.

[0029] Figure 12 This is a schematic perspective view for illustrating another embodiment of blades provided in the dispersion unit.

[0030] [Explanation of Symbols]

[0031] 1: Substrate processing equipment

[0032] 2: Loading part

[0033] 2a: Loading table

[0034] 2a1: Supporting part

[0035] 2a2: concave part

[0036] 2aa: hole

[0037] 2ab: concave part

[0038] 2ac: concave part

[0039] 2b: Axis

[0040] 2c: Drive unit

[0041] 3: Cooling section

[0042] 3a: Coolant section

[0043] 3a1: Cooling gas

[0044] 3b: Filter

[0045] 3c: Flow control unit

[0046] 3d: Cooling nozzle

[0047] 3d1: Hole

[0048] 3da: diameter expansion part

[0049] 4: First liquid supply part

[0050] 4a: Liquid storage area

[0051] 4b: Supply Department

[0052] 4c: Flow control unit

[0053] 4d: Liquid nozzle

[0054] 5: Second liquid supply part

[0055] 5a: Liquid storage area

[0056] 5b: Supply Department

[0057] 5c: Flow control unit

[0058] 6: Shell

[0059] 6a: Cover

[0060] 6b: Separator

[0061] 6c: discharge outlet

[0062] 6c1: Exhaust pipe

[0063] 6c2: discharge pipe

[0064] 7: Air supply unit

[0065] 7a: Air

[0066] 8: Detection Department

[0067] 9: Exhaust

[0068] 10: Dispersed Department

[0069] 10a: Dispersion board

[0070] 10aa: hole

[0071] 10b: Supporting part

[0072] 10ba: Supporting part

[0073] 10bb: concave part

[0074] 11: Controller

[0075] 13da: diameter expansion part

[0076] 13db: flange

[0077] 13dc: convex part

[0078] 100: Substrate

[0079] 100a: Back

[0080] 100b: Surface

[0081] 101: Liquid

[0082] 102: Liquid

[0083] 110: Dispersed Department

[0084] 110a: Dispersion plate

[0085] 110aa: hole

[0086] 110b: Supporting part

[0087] 113da: diameter expansion part

[0088] 203d: Cooling nozzle

[0089] 203d1: Hole

[0090] 203d2: Hole

[0091] 210: Dispersed Department

[0092] 210a: Dispersion plate

[0093] 210aa: hole

[0094] 310: Dispersed Department

[0095] 310a: Dispersion

[0096] 310c: Blade

[0097] 310ca: leaves

[0098] 310cb: upper end of the blade

[0099] D1: Plane size of the dispersion plate

[0100] D2: diameter of the hole

[0101] θ1: tilt angle

[0102] θ2: tilt angle. DETAILED DESCRIPTION

[0103] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0104] The substrate 100 exemplified below may be a plate-shaped body used for, for example, a semiconductor wafer, an imprint template, a photolithography mask, or a micro electro mechanical system (MEMS).

[0105] In this case, the substrate 100 may be a substrate having concavo-convex portions formed as a pattern on the surface, or may be a substrate before the concavo-convex portions are formed (for example, a so-called bulk substrate).

[0106] In the following, a case where the substrate 100 is a photolithography mask will be described as an example. When the substrate 100 is a photolithography mask, the planar shape of the substrate 100 can be set to be substantially square.

[0107] Figure 1 Schematic diagram for illustrating the substrate processing apparatus 1 according to the present embodiment.

[0108] like Figure 1 As shown, the substrate processing apparatus 1 is provided with a placement unit 2, a cooling unit 3, a first liquid supply unit 4, a second liquid supply unit 5, a housing 6, an air supply unit 7, a detection unit 8, an exhaust unit 9, a dispersion unit 10 and a controller 11.

[0109] The placement unit 2 includes a placement table 2a, a rotation shaft 2b, and a driving unit 2c.

[0110] The mounting table 2a is rotatably disposed within the housing 6. The mounting table 2a is plate-shaped. Multiple support portions 2a1 for supporting the substrate 100 are provided on one main surface of the mounting table 2a. When the substrate 100 is supported on the multiple support portions 2a1, the surface 100b of the substrate 100 (the side to be cleaned) faces the side opposite to the mounting table 2a.

[0111] The edge (periphery) of the back side 100a of the substrate 100 contacts a plurality of support portions 2a1. The portion of the support portion 2a1 that contacts the edge of the back side 100a of the substrate 100 can be set as a conical surface or an inclined surface. If the portion of the support portion 2a1 that contacts the edge of the back side 100a of the substrate 100 is a conical surface, the support portion 2a1 can be made into point contact with the edge of the back side 100a of the substrate 100. If the portion of the support portion 2a1 that contacts the edge of the back side 100a of the substrate 100 is an inclined surface, the support portion 2a1 can be made into line contact with the edge of the back side 100a of the substrate 100. If the support portion 2a1 is made into point contact or line contact with the edge of the back side 100a of the substrate 100, contamination of the substrate 100 can be suppressed.

[0112] Furthermore, a hole 2aa is provided in the center portion of the mounting table 2a so as to penetrate the mounting table 2a in the thickness direction.

[0113] The rotating shaft 2b is cylindrical. One end of the rotating shaft 2b is connected to the mounting table 2a. The other end of the rotating shaft 2b is provided outside the housing 6. The rotating shaft 2b is connected to the driving unit 2c outside the housing 6.

[0114] A cooling nozzle 3d, described later, is attached to the end of the rotating shaft 2b opposite the mounting table 2a. A rotating shaft seal (not shown) is provided between the end of the rotating shaft 2b opposite the mounting table 2a and the cooling nozzle 3d. This ensures an airtight seal on the end of the rotating shaft 2b opposite the mounting table 2a.

[0115] The drive unit 2c is disposed outside the housing 6. The drive unit 2c is connected to the rotating shaft 2b. The drive unit 2c may include a rotating device such as a motor. The rotational force of the drive unit 2c is transmitted to the mounting table 2a via the rotating shaft 2b. Therefore, the drive unit 2c can rotate the mounting table 2a and the substrate 100 mounted thereon.

[0116] Furthermore, the driving unit 2c can change not only the start and stop of rotation but also the rotation speed (rotation speed). The driving unit 2c can include a control motor such as a servo motor, for example.

[0117] That is, the placement section 2 includes a placement table 2 a capable of placing the substrate 100 , and can rotate the placed substrate 100 .

[0118] The cooling unit 3 supplies cooling gas 3a1 to the space between the mounting table 2a and the back surface 100a of the substrate 100. The cooling unit 3 includes a cooling liquid unit 3a, a filter 3b, a flow control unit 3c, and a cooling nozzle 3d. The cooling liquid unit 3a, the filter 3b, and the flow control unit 3c are disposed outside the housing 6.

[0119] The cooling liquid unit 3a stores the cooling liquid and generates the cooling gas 3a1. The cooling liquid is formed by liquefying the cooling gas 3a1. The cooling gas 3a1 is not particularly limited, as long as it is a gas that does not readily react with the material of the substrate 100. For example, the cooling gas 3a1 can be an inert gas such as nitrogen, helium, or argon.

[0120] In this case, using a gas with a high specific heat can shorten the cooling time of the substrate 100. For example, using helium can shorten the cooling time of the substrate 100. Also, using nitrogen can reduce the processing cost of the substrate 100.

[0121] The coolant unit 3a includes a tank that holds the coolant and a vaporizer that vaporizes the coolant. The tank is equipped with a cooling device to maintain the coolant's temperature. The vaporizer raises the coolant's temperature to generate cooling gas 3a1 from the coolant. The vaporizer can utilize the outside air temperature or heat with the aid of a heat medium, for example. The temperature of the cooling gas 3a1 can be below the freezing point of the liquid 101 and can be, for example, -170°C.

[0122] Furthermore, although the cooling liquid unit 3a is shown as generating the cooling gas 3a1 by vaporizing the cooling liquid stored in the tank, the cooling gas 3a1 may be generated by cooling nitrogen gas or the like using a cooler, etc. This simplifies the cooling liquid unit.

[0123] The filter 3 b is connected to the coolant portion 3 a via a pipe. The filter 3 b prevents contaminants such as particles contained in the coolant from flowing out to the substrate 100 side.

[0124] The flow control unit 3c is connected to the filter 3b via piping. The flow control unit 3c controls the flow rate of the cooling gas 3a1. The flow control unit 3c can be, for example, a mass flow controller (MFC). Alternatively, the flow control unit 3c can indirectly control the flow rate of the cooling gas 3a1 by controlling the supply pressure of the cooling gas 3a1. In this case, the flow control unit 3c can be, for example, an automatic pressure controller (APC).

[0125] The temperature of the cooling gas 3a1 generated from the cooling liquid in the cooling liquid section 3a is approximately a predetermined temperature. Therefore, by controlling the flow rate of the cooling gas 3a1 using the flow control section 3c, the temperature of the substrate 100 and the temperature of the liquid 101 on the surface 100b of the substrate 100 can be controlled. In this case, by controlling the flow rate of the cooling gas 3a1 using the flow control section 3c, the liquid 101 can be brought into a supercooled state during the supercooling step described later.

[0126] The cooling nozzle 3d is cylindrical. One end of the cooling nozzle 3d is connected to the flow control unit 3c. A hole 3d1 is provided inside the cooling nozzle 3d along the central axis of the cooling nozzle 3d (see Figure 2 (b)). An expanded diameter portion 3da is provided at the other end portion of the cooling nozzle 3d (the end portion on the exhaust side of the cooling gas 3a1). The outer diameter of the expanded diameter portion 3da is, for example, circular and larger than the outer diameter on the flow control portion 3c side of the cooling nozzle 3d. The outer shape of the expanded diameter portion 3da is preferably smaller than the outer shape of the substrate 100. For example, the outer shape of the expanded diameter portion 3da is preferably set to be smaller than the inscribed circle of the substrate 100. The expanded diameter portion 3da is provided inside the hole 2aa, and the hole 2aa is provided in the central portion of the mounting table 2a. The end face of the expanded diameter portion 3da can be provided near the surface of the mounting table 2a on the substrate 100 side.

[0127] The cooling nozzle 3d supplies cooling gas 3a1, whose flow rate is controlled by the flow control unit 3c, from one end of the cooling nozzle 3d through the hole 3d1 to the expanded diameter portion 3da. The cooling gas 3a1 supplied to the expanded diameter portion 3da strikes the dispersing unit 10 and is then supplied to the space between the mounting table 2a and the back surface 100a of the substrate 100, as well as to the back surface 100a of the substrate 100.

[0128] The first liquid supply unit 4 supplies liquid 101 to the surface 100b of the substrate 100. In the freezing process described later, when the liquid 101 becomes solid, the volume changes, so a pressure wave is generated. It is believed that the pressure wave separates the contaminants attached to the surface 100b of the substrate 100. Therefore, there is no particular limitation on the liquid 101, as long as it is a liquid that does not easily react with the material of the substrate 100. Furthermore, the liquid 101 in the supercooled state also has the property of becoming the starting point of freezing due to density changes caused by temperature unevenness of the liquid film, the presence of contaminants such as particles, and vibration. In other words, the starting point of freezing is sometimes also a contaminant.

[0129] Furthermore, it is also believed that if the liquid 101 is a liquid whose volume increases when frozen, the physical force associated with the increased volume can be used to separate contaminants attached to the surface of the substrate 100. Therefore, the liquid 101 is preferably a liquid that does not easily react with the material of the substrate 100 and that increases in volume when frozen. For example, the liquid 101 can be water (e.g., pure water, ultrapure water, etc.) or a liquid primarily composed of water. Examples of liquids primarily composed of water include a mixture of water and ethanol, a mixture of water and an acidic solution, or a mixture of water and an alkaline solution.

[0130] Alternatively, a gas may be dissolved in the liquid 101. The gas may be, for example, carbon dioxide, ozone gas, hydrogen gas, or the like.

[0131] The first liquid supply unit 4 includes, for example, a liquid container 4a, a supply unit 4b, a flow rate control unit 4c, and a liquid nozzle 4d. The liquid container 4a, the supply unit 4b, and the flow rate control unit 4c are provided outside the housing 6.

[0132] The liquid storage portion 4a stores the aforementioned liquid 101. The liquid 101 is stored in the liquid storage portion 4a at a temperature higher than its freezing point. The temperature of the liquid 101 is, for example, room temperature (20°C).

[0133] The supply unit 4b is connected to the liquid storage unit 4a via a pipe. The supply unit 4b supplies the liquid 101 stored in the liquid storage unit 4a to the liquid nozzle 4d. The supply unit 4b is, for example, a pump having resistance to the liquid 101.

[0134] The flow control unit 4c is connected to the supply unit 4b via a pipe. The flow control unit 4c controls the flow rate of the liquid 101 supplied by the supply unit 4b. The flow control unit 4c can be, for example, a flow control valve. In addition, the flow control unit 4c can also start and stop the supply of the liquid 101.

[0135] The liquid nozzle 4d is disposed within the housing 6. The liquid nozzle 4d is cylindrical. One end of the liquid nozzle 4d is connected to the flow control unit 4c via a pipe. The other end of the liquid nozzle 4d faces the surface 100b of the substrate 100 placed on the mounting table 2a. Therefore, the liquid 101 ejected from the liquid nozzle 4d is supplied to the surface 100b of the substrate 100.

[0136] The other end of the liquid nozzle 4d (the outlet for the liquid 101) is located approximately at the center of the surface 100b of the substrate 100. The liquid 101 ejected from the liquid nozzle 4d spreads from approximately the center of the surface 100b of the substrate 100, forming a liquid film having a substantially constant thickness on the surface 100b of the substrate 100. Hereinafter, the film of liquid 101 formed on the surface 100b of the substrate 100 will be referred to as a liquid film.

[0137] The second liquid supply unit 5 supplies the liquid 102 toward the surface 100 b of the substrate 100 .

[0138] The second liquid supply unit 5 includes a liquid storage portion 5 a , a supply portion 5 b , a flow rate control portion 5 c , and a liquid nozzle 4 d .

[0139] Liquid 102 can be used in the thawing step described later. Therefore, there are no particular limitations on liquid 102, as long as it is not likely to react with the material of substrate 100 and is unlikely to remain on surface 100b of substrate 100 during the drying step described later. Liquid 102 can be, for example, water (e.g., pure water, ultrapure water, etc.) or a mixture of water and ethanol.

[0140] The liquid storage unit 5a may be the same as the liquid storage unit 4a described above. The supply unit 5b may be the same as the supply unit 4b described above. The flow control unit 5c may be the same as the flow control unit 4c described above.

[0141] Furthermore, if the liquid 102 is the same as the liquid 101, the second liquid supply unit 5 can be omitted. In addition, although the example shows a case where the liquid nozzle 4d is shared, a liquid nozzle for discharging the liquid 101 and a liquid nozzle for discharging the liquid 102 can also be provided separately.

[0142] The temperature of liquid 102 can be set to a temperature higher than the freezing point of liquid 101. Alternatively, the temperature of liquid 102 can be set to a temperature that can thaw frozen liquid 101. For example, the temperature of liquid 102 can be set to approximately room temperature (20°C).

[0143] When the second liquid supply unit 5 is omitted, the first liquid supply unit 4 is used in the thawing step. That is, the liquid 101 is used. The temperature of the liquid 101 can be set to a temperature that can thaw the frozen liquid 101. For example, the temperature of the liquid 101 can be set to about room temperature (20°C).

[0144] The housing 6 is box-shaped. A cover 6a is provided within the housing 6. The cover 6a receives liquids 101 and 102 supplied to the substrate 100 and discharged outside the substrate 100 as the substrate 100 rotates. The cover 6a is cylindrical. The area near the end of the cover 6a opposite the mounting table 2a (near the upper end of the cover 6a) is curved toward the center of the cover 6a. This facilitates the capture of liquids 101 and 102 that scatter above the substrate 100.

[0145] Furthermore, a partition plate 6 b is provided inside the housing 6 . The partition plate 6 b is provided between the outer surface of the cover 6 a and the inner surface of the housing 6 .

[0146] A plurality of discharge ports 6c are provided on the side surface of the bottom surface of the housing 6. Figure 1 In the case of the housing 6 shown in the example, two outlets 6c are provided. Used cooling gas 3a1, air 7a, liquid 101, and liquid 102 are discharged from the outlets 6c to the exterior of the housing 6. An exhaust pipe 6c1 is connected to the outlet 6c, and an exhaust unit 9 (e.g., a pump) is connected to the exhaust pipe 6c1 for discharging the used cooling gas 3a1 and air 7a. Furthermore, an exhaust pipe 6c2 is connected to the outlet 6c for discharging the liquids 101 and 102.

[0147] The discharge port 6c is provided below the substrate 100. Therefore, the cooling gas 3a1 is discharged from the discharge port 6c, thereby forming a downward flow, thereby preventing particles from flying.

[0148] The air supply unit 7 is provided on the top surface of the housing 6. The air supply unit 7 includes an air supply device such as a blower and a filter. The filter can be, for example, a high efficiency particulate air filter (HEPA).

[0149] Air supply unit 7 supplies air 7a (outside air) to the space between partition plate 6b and the top plate of housing 6. Therefore, the pressure in the space between partition plate 6b and the top plate of housing 6 is higher than the external pressure. This makes it easier for air 7a supplied by air supply unit 7 to be directed to exhaust port 6c. Furthermore, the intrusion of contaminants such as particulate matter into housing 6 through exhaust port 6c is suppressed.

[0150] The detection unit 8 is provided in the space between the partition plate 6b and the top plate of the housing 6. The detection unit 8 detects the temperature of the liquid film and the frozen film formed by the freezing of the liquid 101. In this case, the detection unit 8 can be configured as, for example, a radiation thermometer, a thermal observer, a thermocouple, or a temperature measuring resistor. In addition, the detection unit 8 can also be configured to detect the thickness of the liquid film and the surface position of the frozen film. In this case, the detection unit 8 can be configured as, for example, a laser displacement meter, an ultrasonic displacement meter, etc. In addition, the detection unit 8 can also be configured as an image sensor, etc., which detects the surface state of the liquid film and the surface state of the frozen film.

[0151] The detected temperature, thickness, and surface condition of the liquid film can be used to control the supercooling state of the liquid 101 during the supercooling process described below. Controlling the supercooling state refers to controlling the temperature profile of the supercooled liquid 101 to prevent the liquid 101 from freezing due to sudden cooling, i.e., maintaining the supercooling state.

[0152] Here, if cooling gas 3a1 is supplied only to the back surface 100a of the substrate 100, the temperature distribution within the surface of the substrate 100 may sometimes vary. For example, if the thermal conductivity of the substrate 100 is low, the temperature of the area of ​​the substrate 100 exposed to the cooling gas 3a1 decreases, while the temperature of areas further away from the area becomes higher than that of the area. When the temperature distribution within the surface of the substrate 100 varies, the contaminant removal rate within each area of ​​the substrate 100 may vary during the cooling process (supercooling process + freezing process) described later, making it difficult to improve the contaminant removal rate across the entire area of ​​the substrate 100.

[0153] Therefore, the substrate processing apparatus 1 of this embodiment is provided with the distributing unit 10 .

[0154] like Figure 1 As shown, the dispersion portion 10 (dispersion plate 10a) is provided on the discharge side of the cooling gas 3a1 of the cooling nozzle 3d.

[0155] Figure 2 (a) is a schematic plan view for illustrating the dispersing unit 10 .

[0156] Figure 2 (b) is Figure 2 (a) is a cross-sectional view of the dispersion portion 10 taken along line AA.

[0157] like Figure 2 (a) Figure 2 As shown in (b), the dispersion unit 10 includes, for example, a dispersion plate 10a and a support unit 10b. The dispersion plate 10a and the support unit 10b may be formed integrally.

[0158] The dispersion plate 10a is plate-shaped. The thickness of the dispersion plate 10a is preferably thinner than that of the substrate 100. However, as described later, the dispersion plate 10a is cooled by the cooling gas 3a1. Therefore, the thickness of the dispersion plate 10a is preferably set to a thickness that can withstand thermal expansion. An example of a thickness that can withstand thermal expansion is 2 mm. Furthermore, the dispersion plate 10a is preferably made of a material with good thermal conductivity, such as metal.

[0159] The dispersion plate 10a is disposed within the expanded diameter portion 3da of the cooling nozzle 3d. The dispersion plate 10a can be positioned near the opening of the expanded diameter portion 3da. Specifically, the dispersion plate 10a is positioned so that the substrate 100-facing surface of the mounting table 2a and the substrate 100-facing surface of the dispersion plate 10a are at the same height (same position) along the central axis of the cooling nozzle 3d. In other words, the distance between the back surface 100a of the substrate 100 supported by the support portion 2a1 and the substrate 100-facing surface of the mounting table 2a is the same as the distance between the back surface 100a of the substrate 100 supported by the support portion 2a1 and the substrate 100-facing surface of the dispersion plate 10a.

[0160] The central axis of the dispersion plate 10a may be positioned so as to overlap with the central axis of the cooling nozzle 3d. That is, the dispersion plate 10a may be positioned directly above the hole 3d1 of the cooling nozzle 3d. The surface of the dispersion plate 10a may be perpendicular to the central axis of the cooling nozzle 3d.

[0161] The planar shape of the disperser plate 10a in this embodiment is circular. However, this is not a limitation. For example, the planar shape of the disperser plate 10a can be a regular polygon with an even number of angles that can be considered circular. As described later, a portion of the cooling gas 3a1 that impinges on the disperser plate 10a flows within the expanded diameter portion 3da and is discharged from the opening of the expanded diameter portion 3da. Therefore, if the planar shape of the disperser plate 10a is circular, the dimension between the disperser plate 10a and the inner wall of the expanded diameter portion 3da, as well as the flow resistance, can be made approximately constant. This can prevent imbalances in the flow velocity and flow rate of the cooling gas 3a1 discharged from the opening of the expanded diameter portion 3da.

[0162] The disperser plate 10a also includes a hole 10aa (corresponding to an example of a first hole) extending through the thickness of the disperser plate 10a. The hole 10aa is positioned so as to overlap the central axis of the cooling nozzle 3d when viewed along the central axis of the cooling nozzle 3d. For example, the hole 10aa is positioned in the center of the disperser plate 10a.

[0163] Inside the expanded diameter portion 3da of the cooling nozzle 3d, the support portion 10b supports the disperser plate 10a at a predetermined position. The support portion 10b is beam-shaped and is positioned between the side surface of the disperser plate 10a and the inner wall of the expanded diameter portion 3da of the cooling nozzle 3d. The thickness of the support portion 10b can be, for example, the same as that of the disperser plate 10a. At least one support portion 10b is sufficient. However, providing multiple support portions 10b stabilizes the position and posture of the disperser plate 10a.

[0164] like Figure 2 As shown in (b), cooling gas 3a1 flowing through holes 3d1 of cooling nozzle 3d impinges on dispersion plate 10a, changing its flow direction. At this point, a portion of cooling gas 3a1 impinging on dispersion plate 10a is supplied to back surface 100a of substrate 100 via holes 10aa of dispersion plate 10a. Cooling gas 3a1, having its flow direction changed by dispersion plate 10a, flows within expanded diameter portion 3da and is discharged through the opening of expanded diameter portion 3da. Alternatively, a portion of cooling gas 3a1 can be retained within expanded diameter portion 3da.

[0165] The cooling gas 3 a 1 , which is discharged from the opening of the expanded diameter portion 3 da after hitting the dispersing portion 10 , flows in the space between the mounting table 2 a and the back surface 100 a of the substrate 100 , and is supplied to the back surface 100 a of the substrate 100 .

[0166] As long as the dispersion portion 10 (dispersion plate 10a) is provided, the cooling gas 3a1 can be prevented from directly hitting the central portion of the substrate, compared to the case where the cooling gas 3a1 is directly supplied from the cooling nozzle 3d to the back side 100a of the substrate 100. Therefore, it is possible to prevent the central portion of the back side 100a of the substrate 100 from being overcooled compared to the periphery of the substrate 100. In addition, compared to the case where the cooling gas 3a1 is directly supplied to the back side 100a of the substrate 100, the cooling gas 3a1 hitting the dispersion portion 10 can keep the temperature of the cooling gas 3a1 at a lower state (details of this will be described later). Therefore, compared to the case where the cooling gas 3a1 is directly supplied to the back side 100a of the substrate 100, the cooling gas 3a1 can be supplied to a wider area while keeping the temperature of the cooling gas 3a1 at a lower state. Therefore, it is possible to suppress the deviation of the temperature distribution within the surface of the substrate 100. As a result, in the cooling process (supercooling process + freezing process) described later, variations in the removal rate of contaminants in each region of the substrate 100 can be suppressed, thereby improving the removal rate of contaminants in the entire region of the substrate 100 .

[0167] The variation in the temperature distribution within the surface of the substrate 100 can be adjusted by the planar dimension D1 of the dispersion plate 10 a and the cross-sectional dimension (eg, diameter) of the hole 10 aa .

[0168] According to the inventors' findings, the planar dimension D1 of the dispersion plate 10a is preferably equal to or slightly larger than the diameter D2 of the hole 3d1 of the cooling nozzle 3d. For example, the planar dimension D1 of the dispersion plate 10a may be approximately 1 to 3 mm larger than the diameter D2 of the hole 3d1.

[0169] The size of the hole 10aa is smaller than the diameter D2 of the hole 3d1. The cross-sectional dimension of the hole 10aa is preferably set to be 1 mm or more and 2.5 mm or less.

[0170] By setting the plane dimension D1 of the dispersion plate 10a and the cross-sectional dimension of the hole 10aa in this manner, it is easy to suppress the occurrence of temperature distribution deviation within the surface of the substrate 100. Therefore, the removal rate of contaminants can be further improved.

[0171] The controller 11 controls the operation of each component provided in the substrate processing apparatus 1. The controller 11 includes, for example, a computing unit such as a central processing unit (CPU) and a storage unit such as a semiconductor memory. The controller 11 is, for example, a computer. The storage unit may store a control program for controlling the operation of each component provided in the substrate processing apparatus 1. The computing unit uses the control program stored in the storage unit, data input by the operator, data from the detection unit 8, and the like to control the operation of each component provided in the substrate processing apparatus 1.

[0172] For example, the cooling rate of the liquid 101 is correlated with the thickness of the liquid film. For example, the thinner the thickness of the liquid film, the faster the cooling rate of the liquid 101. On the contrary, the thicker the thickness of the liquid film, the slower the cooling rate of the liquid 101. Therefore, the controller 11 can control the flow rate of the cooling gas 3a1 and the cooling rate of the liquid 101 according to the thickness of the liquid 101 (the thickness of the liquid film) detected by the detection unit 8. Furthermore, the control of the temperature and cooling rate of the liquid 101 is performed when the supercooling state of the liquid 101 is controlled in the supercooling process described later. Therefore, for example, the controller 11 can control the rotation of the substrate 100, the flow rate of the cooling gas 3a1, and the supply amount of the liquid 101.

[0173] Next, the operation of the substrate processing apparatus 1 will be exemplified.

[0174] Figure 3 It is a timing chart for illustrating the operation of the substrate processing apparatus 1 .

[0175] Furthermore, Figure 3 This is a case where the substrate 100 is a 6025 quartz (Qz) substrate (152 mm×152 mm×6.35 mm) and the liquid 101 is pure water.

[0176] First, the substrate 100 is carried into the housing 6 through a carry-in / out port (not shown) of the housing 6. The carried-in substrate 100 is placed and supported on the plurality of support portions 2a1 of the mounting table 2a.

[0177] After the substrate 100 is supported on the mounting table 2a, Figure 3 As shown, a freeze-cleaning process including a preparatory process, a cooling process (supercooling process + freezing process), a thawing process, and a drying process is performed.

[0178] First, if Figure 3 The preparatory step is performed as shown. In the preparatory step, the controller 11 controls the supply unit 4b and the flow control unit 4c to supply a predetermined flow rate of the liquid 101 to the front surface 100b of the substrate 100. Furthermore, the controller 11 controls the flow control unit 3c to supply a predetermined flow rate of the cooling gas 3a1 to the back surface 100a of the substrate 100. Furthermore, the controller 11 controls the drive unit 2c to rotate the substrate 100 at the second rotational speed.

[0179] Therefore, the liquid 101 is supplied to the rotating substrate 100 at a predetermined flow rate.

[0180] For example, the second rotation speed is approximately 50 rpm to 500 rpm. For example, the flow rate of the liquid 101 is approximately 0.1 L / min to 1 L / min. For example, the flow rate of the cooling gas 3a1 is approximately 40 NL / min to 200 NL / min. For example, the process time of the preliminary step is approximately 1800 seconds. Furthermore, the process time of the preliminary step can be any time required for the in-plane temperature of the substrate 100 to become substantially uniform, and can be determined through prior experiments or simulations.

[0181] Since the liquid 101 is supplied at a predetermined flow rate, the temperature of the liquid film during the preliminary step is approximately the same as the temperature of the supplied liquid 101. For example, if the temperature of the supplied liquid 101 is approximately room temperature (20°C), the temperature of the liquid film is also approximately room temperature (20°C).

[0182] Then, if Figure 3 The cooling process (supercooling process + freezing process) is performed as shown. In this embodiment, the process from the time when the liquid 101 becomes supercooled to the time when it starts to freeze is called the "supercooling process", and the process from the time when the supercooled liquid 101 becomes frozen to the time when it starts to thaw through the thawing process is called the "freezing process".

[0183] Here, if the cooling rate of the liquid 101 is too fast, the liquid 101 will not become supercooled and will freeze immediately. Therefore, the controller 11 controls at least one of the flow rate of the cooling gas 3a1 and the rotation speed of the substrate 100, thereby making the liquid 101 on the surface 100b of the substrate 100 become supercooled.

[0184] In the cooling process (supercooling process + freezing process), Figure 3 As shown in the example, after the first rotation speed is set, the supply of the liquid 101 supplied in the preparatory process is stopped. For example, the first rotation speed is about 0 rpm to 50 rpm. The first rotation speed is a rotation speed of such a degree that the liquid 101 supplied from the supply part 4b diffuses on the surface 100b of the substrate 100 to form a liquid film of uniform thickness, and the liquid film of uniform thickness is maintained. That is, the controller 11 rotates the substrate 100 at a rotation speed lower than the rotation speed during the preparatory process. In addition, the thickness of the liquid film of the liquid 101 at this time can be set to be greater than the height dimension of the concave and convex portion provided on the surface 100b of the substrate 100. Furthermore, when the thickness of the liquid film is thin, it is sometimes difficult to form supercooling. In such a case, the thickness of the liquid film is preferably set to be approximately 100 μm or more. Regarding the specific rotation speed conditions, it is preferably determined appropriately by conducting experiments or simulations. In addition, the flow rate of the cooling gas 3a1 is maintained the same as that in the preparatory process.

[0185] Thus, in the cooling step (supercooling step + freezing step), the supply of the liquid 101 is stopped and the rotation speed of the substrate 100 is set to the first rotation speed, which is lower than the second rotation speed, so that the liquid 101 on the substrate 100 stagnates. Therefore, the cooling gas 3a1 that is continuously supplied to the back surface 100a of the substrate 100 causes the temperature of the liquid film on the substrate 100 to further decrease compared to the temperature of the liquid film in the preparatory step, thereby achieving a supercooled state.

[0186] Furthermore, the preliminary step may be performed at the first rotation speed, and the supply of the liquid 101 may be stopped when the in-plane temperature of the substrate 100 becomes uniform.

[0187] The conditions for the liquid 101 to be supercooled are affected by the size of the substrate 100, the viscosity of the liquid 101, the specific heat of the cooling gas 3a1, etc. Therefore, the control conditions for the liquid 101 to be supercooled are preferably determined appropriately by experiments or simulations.

[0188] In a supercooled state, freezing of liquid 101 may begin due to factors such as the temperature of the liquid film, the presence of contaminants such as particles, bubbles, or vibration. For example, in the presence of contaminants such as particles, freezing of liquid 101 may begin when the temperature of liquid 101 reaches -35°C or higher and -20°C or lower. Alternatively, freezing of liquid 101 may be initiated by applying vibration to liquid 101, for example, by varying the rotation of substrate 100.

[0189] When the supercooled liquid 101 begins to freeze, the process shifts from the supercooling step to the freezing step. Even during the freezing step, the cooling gas 3a1 is continuously supplied to the back surface 100a of the substrate 100. Therefore, the supercooled liquid 101 on the surface 100b of the substrate 100 undergoes a mixture of the liquid 101 and the frozen product of the liquid 101, and then completely freezes to form a frozen film.

[0190] Furthermore, the conditions for freezing the supercooled liquid 101 are not limited to the examples. For example, the flow rate of the cooling gas 3a1 may be increased. Alternatively, freezing may be achieved by applying vibrations to the supercooled liquid 101. For example, the rotational speed of the substrate 100 may be varied, or an ultrasonic generator may be provided to apply vibrations to the liquid 101 on the substrate 100, either directly or indirectly, via the rotating shaft 2b.

[0191] Then, if Figure 3 The thawing process is performed as shown. Figure 3 The example shown in FIG. 1 is a case where liquid 101 and liquid 102 are the same liquid. Therefore, Figure 3 101 in the figure. During the thawing process, the controller 11 controls the supply unit 4b and the flow rate control unit 4c to supply a predetermined flow rate of the liquid 101 to the surface 100b of the substrate 100. Furthermore, if the liquid 101 and the liquid 102 are different, the controller 11 controls the supply unit 5b and the flow rate control unit 5c to supply a predetermined flow rate of the liquid 102 to the surface 100b of the substrate 100.

[0192] In addition, the controller 11 controls the flow control unit 3c to stop the supply of the cooling gas 3a1. In addition, the controller 11 controls the driving unit 2c to increase the rotation speed of the substrate 100 to a third rotation speed. The third rotation speed is, for example, about 200 rpm to 700 rpm. If the rotation of the substrate 100 is accelerated, the liquid 101 and the frozen matter of the liquid 101 can be thrown off by centrifugal force. Therefore, the liquid 101 and the frozen matter of the liquid 101 can be discharged from the surface 100b of the substrate 100. At this time, the contaminants separated from the surface 100b of the substrate 100 are also discharged together with the liquid 101 and the frozen matter of the liquid 101.

[0193] Furthermore, the supply amount of liquid 101 or liquid 102 is not particularly limited as long as it can thaw. In addition, the third rotation speed of substrate 100 is not particularly limited as long as it can discharge liquid 101, frozen matter in liquid 101, and contaminants.

[0194] In addition, the thawing of the frozen film does not necessarily need to be started. For example, the thawing may be started in a state where at least a part of the supercooled liquid 101 is frozen.

[0195] Then, if Figure 3 During the drying process, the controller 11 controls the supply unit 4b and the flow control unit 4c to stop the supply of the liquid 101. Furthermore, if the liquid 101 and the liquid 102 are different liquids, the controller 11 controls the supply unit 5b and the flow control unit 5c to stop the supply of the liquid 102.

[0196] Furthermore, the controller 11 controls the drive unit 2c to increase the rotational speed of the substrate 100 to a fourth rotational speed that is faster than the third rotational speed. The faster rotation of the substrate 100 allows for faster drying of the substrate 100. The fourth rotational speed of the substrate 100 is not particularly limited, as long as drying is achieved.

[0197] The substrate 100 after freeze cleaning is carried out to the outside of the housing 6 through a carry-in / out port (not shown) of the housing 6 .

[0198] Thereby, the substrate 100 can be processed (contaminants can be removed).

[0199] The substrate processing apparatus 1 of the present embodiment includes the dispersing unit 10. Therefore, the following describes the operation (temperature and removal rate of the frozen film) of the dispersing unit 10 using a comparative example.

[0200] Figure 4 Graph showing the temperature of the frozen film immediately before thawing from the center to the periphery of the substrate 100 .

[0201] From the center of the substrate toward the periphery, the substrate is divided into a central portion, a mid-section, and a peripheral portion. The length of the central portion is approximately equal to the radius of the dispersion plate 10a. Furthermore, the sum of the central and mid-section lengths is approximately equal to the radius of the expanded diameter portion 3da of the cooling nozzle 3d.

[0202] The dotted line represents the temperature of the frozen film immediately before thawing when a cooling nozzle having a tip without an expanded diameter portion is used (hereinafter referred to as Comparative Example 1).

[0203] The one-dot chain line indicates the temperature of the frozen film immediately before thawing when only the cooling nozzle 3d including the expanded diameter portion 3da is used.

[0204] The solid line indicates the temperature of the frozen film immediately before thawing when using the cooling nozzle 3d including the enlarged diameter portion 3da and the dispersing unit 10 including the dispersing plate 10a having 2 mm holes 10aa.

[0205] Compare Example 1 with Comparative Example 1. Figure 4As shown, the temperature of the frozen film immediately before thawing in Example 1 is high at the center of the substrate. However, the temperature of the frozen film immediately before thawing in Example 1 is lower than that in Comparative Example 1 at the middle and outer peripheries of the substrate. In Example 1, it is believed that the temperature of the frozen film at the center of the substrate increases compared to Comparative Example 1 because the dispersion plate 10a reduces the amount of cooling gas 3a1 supplied to the center of the substrate compared to Comparative Example 1. In addition, it is believed that in Example 1, the cooling gas 3a1, which has less heat loss than in Comparative Example 1, flows more easily to the periphery of the substrate 100. As a result, in Example 1, the temperature of the frozen film decreases from the middle to the outer periphery of the substrate compared to Comparative Example 1.

[0206] Next, Example 1 is compared with Comparative Example 2. Figure 4 As shown, in Example 1, the temperature of the frozen film immediately before thawing is higher at the center of the substrate. However, in the middle and outer periphery of the substrate, the temperature of the frozen film immediately before thawing in Example 1 is lower than in Comparative Example 2. Comparative Example 2 does not have a dispersion plate 10a. Therefore, the cooling gas 3a1 supplied from the cooling nozzle 3d directly impacts the back surface 100a of the substrate 100. Therefore, it is believed that the amount of cooling gas 3a1 that transfers heat to and from the substrate 100 in the center of the substrate is greater in Comparative Example 2 than in Example 1. As a result, the temperature of the frozen film in Comparative Example 2 is lower at the center of the substrate than in Example 1. However, the cooling gas 3a1 that transfers heat to and from the substrate 100 loses heat. Furthermore, the cooling gas 3a1 that impacts the back surface 100a of the substrate 100 flows toward the bottom surface of the expanded diameter portion 3da, where it stagnates. However, due to the stagnation of the cooling gas 3a1 that has suffered heat loss, the temperature inside the expanded diameter portion is believed to be higher than in Example 1. Therefore, it is considered that the temperature of the frozen film in Comparative Example 2 is higher than that in Example 1 at the substrate middle portion and the substrate outer peripheral portion.

[0207] Figure 5 Graph showing the removal rate from the center to the periphery of the substrate 100 .

[0208] The dotted line shows the distribution of the removal rate in the case of Comparative Example 1.

[0209] The one-dot chain line shows the distribution of the removal rate in the case of Comparative Example 2.

[0210] The solid line shows the distribution of the removal rate in the case of Example 1.

[0211] like Figure 5 As shown, Example 1 has a higher removal rate from the center of the substrate to the periphery than Comparative Examples 1 and 2. In particular, a higher removal rate than Comparative Examples 1 and 2 is achieved from the middle of the substrate to the periphery.

[0212] In Example 1, a higher removal rate was achieved from the center to the periphery of the substrate than in Comparative Examples 1 and 2. This is believed to be due to the lower temperature of the frozen film at the corresponding location, just before thawing. Therefore, compared to Comparative Examples 1 and 2, Example 1 suppressed variations in the temperature distribution within the surface of substrate 100. Consequently, Example 1 was able to suppress variations in the supercooled state of liquid 101 or variations in the frozen state of liquid 101. As a result, it is believed that the contaminant removal rate was improved.

[0213] In the case of a conventional cooling gas nozzle that does not include the expanded diameter portion 3da and the dispersing portion 10 (dispersing plate 10a), the cooling gas 3a1 is discharged from the end portion on the discharge side of the cooling gas nozzle toward the center of the back surface 100a of the substrate 100. After contacting the center of the back surface 100a of the substrate 100, the cooling gas 3a1 flows toward the outer periphery of the substrate 100 in the space between the mounting table 2a and the back surface 100a of the substrate 100.

[0214] At this time, the center of the back surface 100a of the substrate 100, where the cooling gas 3a1 strikes, receives the strongest cooling. In other words, the center of the back surface 100a of the substrate 100 is cooled more than the periphery of the substrate 100. Furthermore, after striking the back surface 100a of the substrate 100, the cooling gas 3a1 flows toward the periphery of the substrate 100 while transferring heat to and from the back surface 100a. Therefore, the temperature of the cooling gas 3a1 increases as it moves toward the periphery of the substrate 100. Consequently, the temperature of the substrate 100 increases as it moves toward the periphery, causing a deviation in the temperature distribution within the substrate surface.

[0215] The substrate processing apparatus 1 of this embodiment is equipped with a distribution unit 10 (distribution plate 10a). The distribution plate 10a is formed of a material with high thermal conductivity and is thinner than the substrate 100. Therefore, during the preparatory step, the distribution plate 10a is cooled to a temperature substantially equal to that of the cooling gas 3a1. Consequently, even if the cooling gas 3a1 strikes the distribution plate 10a during the cooling step (supercooling step + freezing step), heat loss from the cooling gas 3a1 is reduced.

[0216] After striking the dispersion plate 10a, a portion of the cooling gas 3a1 bypasses the outer periphery of the dispersion plate 10a and flows to the back surface 100a of the substrate 100. This reduces heat loss compared to when the cooling gas 3a1 strikes the dispersion plate 10a and strikes the center of the back surface 100a of the substrate 100. Consequently, the portion of the cooling gas 3a1 striking the dispersion plate 10a reaches the back surface 100a of the substrate 100 facing the outer periphery of the dispersion plate 10a at a lower temperature than before. Consequently, the portion of the cooling gas 3a1 striking the dispersion plate 10a further cools the back surface 100a of the substrate 100 facing the outer periphery of the dispersion plate 10a.

[0217] Here, the dispersion plate 10a is positioned near the opening of the expanded diameter portion 3da. This reduces the amount of cooling gas 3a1 that, after striking the dispersion plate 10a, detours and enters the central portion of the back surface 100a of the substrate 100. Consequently, the amount of cooling gas 3a1 that strikes the central portion of the back surface 100a of the substrate 100 can be reduced compared to conventional methods. Consequently, excessive cooling of the central portion of the substrate 100 relative to the outer periphery of the substrate 100 can be prevented.

[0218] As mentioned above, the length of the center of the substrate is substantially the same as the radius of the dispersion plate 10a. Therefore, a portion of the cooling gas 3a1 that hits the dispersion plate 10a can further cool the substrate. Figure 4 As shown, the boundary between the center and middle of the substrate is close to each other. As a result, the deviation of the temperature distribution within the substrate surface can be reduced.

[0219] Furthermore, a hole 10aa, which is smaller than the hole 3d1 of the cooling nozzle 3d, is provided in the center of the dispersion plate 10a. As previously mentioned, the dispersion plate 10a can reduce the amount of cooling gas 3a1 that bypasses the central portion of the back surface 100a of the substrate 100. However, if the amount of cooling gas 3a1 that bypasses the back surface 100a of the substrate 100 is reduced too much, the temperature of the central portion of the substrate 100 may become higher than the temperature of the outer periphery of the substrate 100. Therefore, to prevent the temperature of the central portion of the substrate 100 from becoming higher than the temperature of the outer periphery of the substrate 100, the dispersion plate 10a is provided with the hole 10aa. Providing the hole 10aa in the dispersion plate 10a can prevent the central portion of the back surface 100a of the substrate 100 from being overcooled compared to the outer periphery of the substrate 100, and prevent the temperature of the central portion of the back surface 100a of the substrate 100 from becoming higher than the temperature of the outer periphery of the substrate 100. That is, by supplying a small amount of cooling gas 3a1 to the central portion of the back surface 100a of the substrate 100 through the hole 10aa, the temperature of the central portion of the back surface 100a of the substrate 100 can be cooled to the same level as the temperature of the outer periphery of the substrate 100. In particular, the cross-sectional dimension of the hole 10aa is preferably set to be greater than or equal to 1 mm and less than or equal to 2.5 mm.

[0220] Furthermore, in the substrate processing apparatus 1 of this embodiment, the cooling nozzle 3d is provided with an expanded diameter portion 3da. By providing the expanded diameter portion 3da on the cooling nozzle 3d, the cooling gas 3a1, whose flow direction has been redirected by the dispersion plate 10a, flows within the expanded diameter portion 3da. Consequently, the cooling gas 3a1 flowing into the expanded diameter portion 3da remains within the expanded diameter portion 3da. The cooling gas 3a1 remaining within the expanded diameter portion 3da cools the cooling gas 3a1 in the space between the mounting table 2a and the back surface 100a of the substrate 100. Thus, the cooling gas 3a1 remaining within the expanded diameter portion 3da indirectly cools the back surface 100a of the substrate 100.

[0221] The cooling gas 3a1 flowing into the expanded diameter portion 3da is retained within the expanded diameter portion 3da by the dispersion plate 10a at a lower temperature than in Comparative Example 2. As previously mentioned, the combined length of the substrate center and the substrate midsection is approximately equal to the radius of the expanded diameter portion 3da of the cooling nozzle 3d. Therefore, the cooling gas 3a1 retained within the expanded diameter portion 3da can further cool the central portion of the substrate 100.

[0222] Furthermore, the cooling gas 3a1 that remains inside the expanded diameter portion 3da is exhausted from the outer periphery of the expanded diameter portion 3da. As previously described, the cooling gas 3a1 that flows into the expanded diameter portion 3da remains inside the expanded diameter portion 3da at a lower temperature than in Comparative Example 2. Therefore, the temperature of the cooling gas 3a1 exhausted from the outer periphery of the expanded diameter portion 3da is lower than that in Comparative Example 2. Consequently, the cooling gas 3a1 exhausted from the outer periphery of the expanded diameter portion 3da can further cool the outer periphery of the substrate 100.

[0223] In the substrate processing apparatus 1 of this embodiment, the cooling nozzle 3d is provided with an expanded diameter portion 3da and a dispersing portion 10 (dispersing plate 10a). This suppresses variations in the temperature distribution within the surface of the substrate 100. Consequently, variations in the supercooled state of the liquid 101 or variations in the frozen state of the liquid 101 can be suppressed, thereby improving the contaminant removal rate.

[0224] Figure 6 2 is a schematic cross-sectional view of a dispersing unit 110 for illustrating another embodiment.

[0225] like Figure 6 As shown, the distributing portion 110 includes, for example, a distributing plate 110 a and a supporting portion 110 b .

[0226] In the aforementioned dispersion unit 10, the dispersion plate 10a is positioned inside the expanded diameter portion 3da of the cooling nozzle 3d. In contrast, in the dispersion unit 110, the dispersion plate 110a is positioned outside the expanded diameter portion 3da of the cooling nozzle 3d. The dispersion plate 110a is plate-shaped. It can be positioned near the opening of the expanded diameter portion 3da of the cooling nozzle 3d. The central axis of the dispersion plate 110a can be positioned so as to overlap with the central axis of the cooling nozzle 3d. In other words, the dispersion plate 110a can be positioned directly above the hole 3d1 of the cooling nozzle 3d. The surface of the dispersion plate 110a can be perpendicular to the central axis of the cooling nozzle 3d.

[0227] The planar shape and size of the dispersion plate 110a may be the same as those of the dispersion plate 10a described above.

[0228] Furthermore, the dispersion plate 110a includes a hole 110aa extending through the thickness thereof. For example, the hole 110aa is provided in the center of the dispersion plate 110a. The hole 110aa may be the same as the hole 10aa of the dispersion plate 10a described above.

[0229] The support portion 110b supports the dispersion plate 110a at a predetermined position outside the expanded diameter portion 3da of the cooling nozzle 3d. The support portion 110b is in the shape of a beam and is provided between the side surface of the dispersion plate 110a and the surface of the mounting table 2a on the substrate 100 side. Figure 6 As shown, a recess is provided on the substrate 100-facing surface of the mounting table 2a. The end portion of the support portion 110b opposite the diffuser plate 110a side may also be provided within the recess provided on the substrate 100-facing surface of the mounting table 2a. The thickness of the support portion 110b may be the same as that of the diffuser plate 110a, for example. It suffices to provide at least one support portion 110b. However, providing multiple support portions 110b stabilizes the position and posture of the diffuser plate 110a.

[0230] like Figure 6 As shown, cooling gas 3a1 flowing through holes 3d1 of cooling nozzle 3d impinges on dispersion plate 110a, changing its flow direction. At this point, a portion of cooling gas 3a1 impinging on dispersion plate 110a is supplied to back surface 100a of substrate 100 via holes 110aa of dispersion plate 110a. Cooling gas 3a1, having its flow direction changed by dispersion plate 110a, flows within expanded diameter portion 3da and is discharged through the opening of expanded diameter portion 3da. Alternatively, a portion of cooling gas 3a1 can be retained within expanded diameter portion 3da.

[0231] The cooling gas 3 a 1 , which is discharged from the opening of the expanded diameter portion 3 da after hitting the dispersing portion 110 , flows in the space between the mounting table 2 a and the back surface 100 a of the substrate 100 , and is supplied to the back surface 100 a of the substrate 100 .

[0232] The provision of the dispersion section 110 (dispersion plate 110a) provides the same benefits as the dispersion section 10 (dispersion plate 10a) described above. The dispersion section 110 is provided outside the expanded diameter portion 3da of the cooling nozzle 3d. Therefore, the distance between the dispersion section 110 and the back surface 100a of the substrate 100 is short. This further reduces the amount of cooling gas 3a1 that bypasses the central portion of the back surface 100a of the substrate 100. This is particularly effective in situations where the central portion of the substrate 100 is excessively cooled compared to the outer periphery of the substrate 100. In other words, it suppresses variations in the temperature distribution within the surface of the substrate 100.

[0233] In addition, the dispersion section 110 is connected to the surface of the mounting table 2a on the substrate 100 side via the support section 110b. Therefore, the dispersion section 110 can rotate together with the mounting table 2a. The cooling gas 3a1 hits the rotating dispersion section 110, thereby rotating the cooling gas 3a1 together with the dispersion section 110. In other words, the cooling gas 3a1 obtains rotational energy from the dispersion section 110. Therefore, the cooling gas 3a1 further flows to the periphery of the substrate 100. Therefore, the boundary between the center portion and the middle portion of the substrate can be further cooled. As a result, the deviation of the temperature distribution within the surface of the substrate can be reduced.

[0234] Therefore, in the cooling process (supercooling process + freezing process) described above, variations in the removal rate of contaminants in each region of the substrate 100 can be suppressed, thereby improving the removal rate of contaminants in the entire region of the substrate 100 .

[0235] Figure 7 2 is a schematic cross-sectional view of a dispersion unit 210 for illustrating another embodiment.

[0236] like Figure 7 As shown, the dispersion portion 210 includes, for example, a dispersion plate 210 a .

[0237] In the aforementioned dispersion unit 10, the dispersion plate 10a is located within the expanded diameter portion 3da of the cooling nozzle 3d. In contrast, the dispersion plate 210a is located at the tip of the cooling nozzle 203d, which does not have an expanded diameter portion. The dispersion plate 210a is located at the end of the cooling nozzle 203d, on the side where the cooling gas 3a1 is discharged. In other words, the dispersion unit 210 does not include a support portion for the dispersion plate 210a.

[0238] The disperser plate 210a is plate-shaped. The central axis of the disperser plate 210a can be positioned so as to overlap the central axis of the cooling nozzle 203d. Specifically, the disperser plate 210a can be positioned directly above the hole 203d1 (equivalent to an example of the second hole) extending within the cooling nozzle 203d. The surface of the disperser plate 210a can be perpendicular to the central axis of the cooling nozzle 203d.

[0239] The planar shape and size of the dispersion plate 210a may be the same as those of the dispersion plate 10a described above.

[0240] Furthermore, the dispersion plate 210a includes a hole 210aa extending through the thickness thereof. For example, the hole 210aa is provided in the center of the dispersion plate 210a. The hole 210aa may be the same as the hole 10aa of the dispersion plate 10a described above.

[0241] In addition, a plurality of holes 203d2 (corresponding to an example of a third hole) are provided near the end of the cooling nozzle 203d where the dispersion plate 210a is provided. The holes 203d2 penetrate between the side surface of the cooling nozzle 203d and the hole 203d1.

[0242] Furthermore, a recessed portion 2a2 is provided on the surface of the mounting table 2a facing the substrate 100. The outer shape of the recessed portion 2a2 is, for example, circular or rectangular. The outer shape of the recessed portion 2a2 is preferably smaller than the outer shape of the substrate 100. The portion of the dispersion plate 210a and the cooling nozzle 203d, where the plurality of holes 203d2 are provided, are located within the recessed portion 2a2. In other words, the recessed portion 2a2 is provided in place of the expanded diameter portion 3da.

[0243] like Figure 7 As shown, cooling gas 3a1 flowing through holes 203d1 of cooling nozzle 203d impinges on dispersion plate 210a, changing its flow direction. At this point, a portion of the cooling gas 3a1 impinging on dispersion plate 210a is supplied to back surface 100a of substrate 100 via holes 210aa of dispersion plate 210a. The cooling gas 3a1, whose flow direction has been changed by dispersion plate 210a, is then supplied to recess 2a2 via multiple holes 203d2. The cooling gas 3a1 supplied to recess 2a2 flows within recess 2a2 and is then discharged through the opening of recess 2a2. Alternatively, a portion of the cooling gas 3a1 can be retained within recess 2a2.

[0244] The cooling gas 3 a 1 exhausted from the opening of the recessed portion 2 a 2 flows in the space between the mounting table 2 a and the rear surface 100 a of the substrate 100 , and is supplied to the rear surface 100 a of the substrate 100 .

[0245] The provision of the dispersion unit 210 (dispersion plate 210a) provides the same benefits as the dispersion unit 10 (dispersion plate 10a) described above. Specifically, it reduces variations in the temperature distribution within the substrate 100. Consequently, during the aforementioned cooling process (supercooling + freezing), variations in the contaminant removal rate within each region of the substrate 100 are reduced, thereby improving the contaminant removal rate across the entire substrate 100.

[0246] It is particularly preferred that the outer shape of the recess 2a2 be similar to that of the substrate 100, and more preferably slightly smaller than the substrate 100. This allows the cooling gas 3a1 to stagnate at the four corners of the substrate 100, even if the substrate 100 is substantially square. Furthermore, the recess 2a2 can rotate along with the substrate 100. Therefore, the four corners of the substrate 100 are always cooled by the cooling gas 3a1 stagnating there. In this case, the recess 2a2 is preferably 5 mm to 10 mm smaller than the substrate 100.

[0247] Figure 8 (a) is a schematic diagram for illustrating a dispersing unit 310 according to another embodiment.

[0248] Figure 8 (b) is a perspective view for illustrating the blade 310c.

[0249] Figure 8 (c) is Figure 8 BB line cross-sectional view of the dispersion portion 310 in (a).

[0250] Figure 8 (d) is Figure 8 FIG. 1 is a cross-sectional view of the dispersion portion 310 taken along line CC in FIG. 1 .

[0251] like Figure 8 As shown in FIG. 1 (a), the dispersing unit 310 includes, for example, a dispersing plate 10a, a supporting unit 10b, and blades 310c. That is, the dispersing unit 310 is obtained by adding blades 310c to the dispersing unit 10 described above.

[0252] The blade 310c may be provided between the support portions 10b and the support portions 10b. The blade 310c is plate-shaped, one end of which is connected to the dispersion plate 10a, and the other end of which is connected to the inner wall of the enlarged diameter portion 3da of the cooling nozzle 3d.

[0253] like Figure 8 As shown in (b), the blade 310c has a twisted shape with an increasing tilt angle from one end to the other end. Figure 8 (c) and Figure 8 As shown in (d), the inclination angle θ2 of the expanded diameter portion 3da of the blade 310c can be larger than the inclination angle θ1 of the blade 310c on the dispersion plate 10a side. For example, the inclination angle θ1 can be set to about 10 degrees, and the inclination angle θ2 can be set to about 60 degrees.

[0254] If such blades 310 c are provided, the cooling gas 3 a 1 that has struck the dispersion portion 310 can be guided to the outer peripheral side of the substrate 100 along the blades 310 c .

[0255] Furthermore, the example shows the case where the blades 310c are provided on the dispersion plate 10a, but it is also possible to Figure 6 The blade 310c is provided on the dispersion plate 110a shown in the example. The blade 310c is connected to the side surface of the dispersion plate 110a at one end and connected to the substrate 100 side surface of the mounting table 2a at the other end, like the support portion 110b. Thus, the blade 310c can rotate together with the mounting table 2a. For example, when the blade 310c is connected to the side surface of the dispersion plate 110a at one end and connected to the substrate 100 side surface of the mounting table 2a at the other end. Figure 8 When the cooling gas 3a1 is installed on the dispersion plate 110a as shown in (b), the controller 11 rotates the mounting table 2a clockwise, thereby allowing the blades 310c to guide the cooling gas 3a1 further toward the substrate. In other words, by rotating the blades 310c in a direction in which the blades 310c point downward, the cooling gas 3a1 can be guided further toward the substrate.

[0256] In addition, you can also Figure 7 The dispersion plate 210a shown in the example is provided with blades 310c. When the dispersion plate 210a is provided with blades 310c, only one end of the blades 310c is connected to the dispersion plate 210a. In this case, the cooling gas 3a1 that has struck the dispersion portion 310 can be guided along the blades 310c toward the outer periphery of the substrate 100.

[0257] Alternatively, only one end of the blade 310c is connected to the inner wall of the recess 2a2 provided on the mounting table 2a. In this case, the controller 11 rotates the blade 310c in a direction in which the blade 310c is directed downward, thereby guiding the cooling gas 3a1 flowing inside the recess 2a2 toward the substrate 100.

[0258] Figure 9 It is a schematic perspective view of a support portion 10ba for illustrating another embodiment.

[0259] For example, like the support portion 10b, the support portion 10ba has a beam shape and is provided between the side surface of the dispersion plate 10a and the inner wall of the enlarged diameter portion 3da of the cooling nozzle 3d.

[0260] like Figure 9 For example, the support portion 10ba can be formed with a spiral recess 10bb on the side of the support portion 10b. Providing the spiral recess 10bb on the side of the support portion 10ba allows the cooling gas 3a1 that contacts the spiral recess 10bb to flow in a spiral direction. Therefore, compared to a support portion 10b without the spiral recess 10bb, the amount of cooling gas 3a1 reaching the back surface 100a of the substrate 100 can be increased.

[0261] Furthermore, a spiral concave portion 10bb may be provided on the side surface of the support portion 110b (see Figure 9In particular, it is preferable to provide a spiral recess 10bb on the side of the portion of the support portion 110b parallel to the horizontal direction. The support portion 110b rotates as the mounting table 2a rotates. This allows the cooling gas 3a1 that contacts the spiral recess 10bb to flow in a further spiral direction. As a result, the amount of cooling gas 3a1 directed to the back surface 100a of the substrate 100 can be increased.

[0262] Figure 10 It is a schematic cross-sectional view of the enlarged diameter portion 13da for illustrating another embodiment.

[0263] This embodiment shares the same characteristics as the aforementioned embodiment in that the cooling nozzle 3d is fixed (non-rotatable). However, this embodiment differs in that a gap is formed between the cooling nozzle 3d and the rotating shaft 2b, and no sealing member such as a rotating shaft seal is present. This structure eliminates the need for a sealing member. However, the cooling gas 3a1 supplied to the space between the mounting table 2a and the back surface 100a of the substrate 100 can easily leak out of the housing 6 through the gap.

[0264] To prevent this phenomenon, Figure 10 As shown, the enlarged diameter portion 13da can be formed by providing a flange 13db on the side of the enlarged diameter portion 3da described above. The flange 13db is plate-shaped. The upper surface of the flange 13db can be set to be flush with the upper surface of the enlarged diameter portion 3da.

[0265] In addition, a recess 2ab can be provided on the periphery of the hole 2aa of the mounting table 2a, and the recess 2ab is opened on the surface of the mounting table 2a on the side of the substrate 100. The flange 13db is provided inside the recess 2ab with a gap therebetween. That is, a gap is provided between the back surface of the flange 13db (the surface on the bottom surface side of the recess 2ab) and the bottom surface of the recess 2ab. In addition, a gap is provided between the side surface of the flange 13db and the side surface of the recess 2ab. Therefore, the rotating mounting table 2a does not come into contact with the non-rotating flange 13db. In addition, the length of the gap provided between the flange 13db and the inner wall of the recess 2ab becomes the length along the inner wall of the recess 2ab.

[0266] Here, the length of the gap provided between the flange 13db and the inner wall of the recessed portion 2ab is greater than the length of the gap formed between the enlarged diameter portion 3da and the hole 2aa (see Figure 2(b)) is longer. Therefore, the flow resistance of the gap between flange 13db and the inner wall of recess 2ab is greater than the flow resistance of the gap between expanded diameter portion 3da and hole 2aa. This prevents the cooling gas 3a1 supplied to the space between mounting table 2a and back surface 100a of substrate 100 from leaking through the gap. Furthermore, it prevents outside air from intruding into the space between mounting table 2a and back surface 100a of substrate 100 through the gap. Consequently, cooling efficiency can be improved.

[0267] The shorter the length of the rotating shaft 2b, the shorter the gap between the expanded diameter portion 3da and the hole 2aa. Therefore, the expanded diameter portion 13da of this embodiment is more ideal when there is a gap between the cooling nozzle 3d and the rotating shaft 2b and the length of the rotating shaft 2b is shorter.

[0268] Figure 11 113 is a schematic cross-sectional view of an enlarged diameter portion 113 da for illustrating another embodiment.

[0269] like Figure 11 As shown, the expanded diameter portion 113da is formed by providing an annular convex portion 13dc on the back side of the flange 13db mentioned above (the side on the bottom side of the recess 2ab). An annular recess 2ac is provided on the bottom surface of the recess 2ab at a position facing the convex portion 13dc, and the annular recess 2ac is opened on the bottom surface of the recess 2ab. The convex portion 13dc is provided inside the recess 2ac with a gap therebetween. Therefore, the rotating mounting table 2a does not come into contact with the non-rotating flange 13db and convex portion 13dc. As long as the convex portion 13dc and the recess 2ac are provided, the flow path resistance of the gap provided between the flange 13db and the inner wall of the recess 2ab can be further increased. Therefore, the cooling gas 3a1 supplied to the space between the mounting table 2a and the back side 100a of the substrate 100 can be further suppressed from leaking through the gap. In addition, it is possible to further suppress the intrusion of outside air into the space between the mounting table 2a and the back surface 100a of the substrate 100 through the gap. Therefore, the cooling efficiency can be further improved.

[0270] Figure 12 31 is a schematic perspective view for illustrating another embodiment of the blade 310ca provided in the dispersing portion 310a.

[0271] and Figure 8 Like the blade 310c shown in (a), the blade 310ca can be provided between the support portions 10b. The blade 310ca is plate-shaped, one end of which is connected to the dispersion plate 10a and the other end is connected to the inner wall of the expanded diameter portion 3da of the cooling nozzle 3d.

[0272] like Figure 12As shown, the blade 310ca has a twisted shape with an increasing tilt angle from one end to the other end. Figure 8 The number, arrangement, and inclination angle of blades 310ca may be the same as those of blades 310c.

[0273] However, the upper end 310cb of the blade 310ca is located below the upper surface of the dispersion plate 10a. In this way, the flow of the cooling gas 3a1 flowing along the upper surface of the dispersion plate 10a is not disturbed by the upper end 310cb of the blade 310ca.

[0274] To ensure that the upper end 310cb of the blade 310ca is located below the upper surface of the dispersion plate 10a, one end of the blade 310ca connected to the dispersion plate 10a is preferably installed at an angle to the side of the dispersion plate 10a. In this case, the angle of the installation is preferably less than 10°.

[0275] The above embodiments are exemplified. However, the present invention is not limited to these descriptions. As long as the features of the present invention are present, embodiments formed by adding, deleting, or modifying the design of the above embodiments by those skilled in the art, or by adding, omitting, or modifying the conditions of the above embodiments are also within the scope of the present invention.

[0276] For example, the shape, size, number, arrangement, etc. of each element included in the substrate processing apparatus 1 can be modified as appropriate and are not limited to the examples.

Claims

1. A substrate processing device, comprising: a loading portion including a loading table capable of loading a substrate and capable of rotating the loaded substrate; a cooling nozzle capable of supplying cooling gas to the space between the mounting table and the substrate; a liquid supply unit capable of supplying liquid to a surface of the substrate opposite to the mounting table; as well as a dispersion plate provided on the exhaust side of the cooling gas of the cooling nozzle, The dispersion plate includes a first hole extending through the thickness direction. The first hole is provided at a position overlapping with the central axis of the cooling nozzle when viewed from a direction along the central axis of the cooling nozzle. The cross-sectional size of the first hole is smaller than the diameter of the hole of the cooling nozzle.

2. The substrate processing apparatus according to claim 1, wherein: The cooling nozzle includes an expanded diameter portion provided at an end portion on the exhaust side of the cooling gas. The dispersion plate is disposed inside the enlarged diameter portion.

3. The substrate processing apparatus according to claim 1 or 2, wherein: In a direction along the central axis of the cooling nozzle, a surface of the mounting table on the substrate side and a surface of the dispersion plate on the substrate side are located at the same position.

4. The substrate processing apparatus according to claim 1, wherein: The cooling nozzle includes an expanded diameter portion provided at an end portion on the exhaust side of the cooling gas. The dispersion plate is provided outside the enlarged diameter portion.

5. The substrate processing apparatus according to claim 1, wherein: The dispersion plate is provided at an end portion of the cooling nozzle on the exhaust side of the cooling gas. The cooling nozzle includes a third hole extending through the side surface near the end where the dispersion plate is provided and between the second hole extending inside the cooling nozzle. A recess is provided on the surface of the mounting table on the substrate side. The portions of the dispersion plate and the cooling nozzle where the third holes are provided are provided inside the recess. The substrate processing apparatus according to claim 1 , wherein: The cross-sectional size of the first hole is greater than or equal to 1 mm and less than or equal to 2.5 mm. 7 . The substrate processing apparatus according to claim 2 , further comprising a blade, one end of which is connected to the dispersion plate and guides the cooling gas flowing inside the expanded diameter portion toward the substrate. 8 . The substrate processing apparatus according to claim 5 , further comprising a blade, one end of which is connected to the dispersion plate and guides the cooling gas flowing inside the recess provided on the mounting table toward the substrate.

9. The substrate processing apparatus according to claim 2 or 4, further comprising a flange, the flange being provided on a side of the enlarged diameter portion and being in a plate shape. A recess is provided on the surface of the mounting table on the substrate side. The flange is provided inside the recessed portion with a gap therebetween.

10. The substrate processing apparatus according to claim 9, wherein: An annular convex portion is provided on the bottom surface side of the concave portion of the flange. An annular recessed portion is provided at a position on the bottom surface of the recessed portion facing the convex portion, and the annular recessed portion is opened on the bottom surface of the recessed portion. The annular convex portion is provided inside the annular concave portion with a gap therebetween. 11 . The substrate processing apparatus according to claim 2 , further comprising a support portion, wherein the support portion is in a beam shape, one end of which is connected to the dispersion plate, and the support portion includes a spiral concave portion on a side surface.

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