A processing apparatus and a processing method for wafer pressing

Abstract

The application provides a kind of crystal pressing processing device, comprising: upper cover, with air inlet and exhaust port;Baffle, fixed in the upper cover;Gas film, set on the upper cover, and located on the side of the baffle;Shell;Pressing platform, the upper cover, the shell and the pressing platform are sequentially detachable connection, and crystal and substrate are placed on the pressing platform;And ultraviolet light source, set on the side of the upper cover or the pressing platform;Wherein, when the gas is blown into the air inlet, the gas film can expand outward, and uniform pressure is applied to the crystal, when the ultraviolet light source emits ultraviolet light, the ultraviolet light can irradiate the ultraviolet curing glue between the crystal and the substrate. Through the crystal pressing processing device disclosed by the application, the pressing effect of the crystal can be effectively improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of spectral device, in particular to a processing device and method for crystal bonding. BACKGROUND

[0002] Crystal bonding refers to bonding two wafers to form a whole. In the bonding process, due to the different chemical adsorption states, flatness and surface roughness of the two wafers, the bonding effect is poor and the quality of the produced crystal is not high. SUMMARY

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a processing device and method for crystal bonding, which can effectively improve the bonding effect of the crystal.

[0004] To achieve the above-mentioned purposes and other related purposes, the present application provides a processing device for crystal bonding, comprising:

[0005] an upper cover provided with an air inlet and an air outlet;

[0006] a flow guide plate fixed in the upper cover;

[0007] an air film provided on the upper cover and located on one side of the flow guide plate;

[0008] a shell;

[0009] a bonding platform, the upper cover, the shell and the bonding platform are sequentially detachably connected, and the crystal and the substrate are placed on the bonding platform; and

[0010] an ultraviolet light source provided on one side of the upper cover or the bonding platform;

[0011] When air is blown into the air inlet, the air film can expand outwardly and apply uniform pressure to the crystal, and when the ultraviolet light source emits ultraviolet light, the ultraviolet light can irradiate the ultraviolet curing glue between the crystal and the substrate

[0012] In an embodiment of the present application, the processing device further comprises:

[0013] a through-hole structure provided on the central part of the flow guide plate; and

[0014] an annular flow guide groove provided on the flow guide plate and located outside the through-hole structure;

[0015] The air inlet, the air outlet, the through-hole structure and the annular flow guide groove are in communication with each other.

[0016] In an embodiment of the present application, the processing device further comprises an upper window arranged on the upper cover.

[0017] In an embodiment of the present application, the processing device further comprises a lower window arranged on the pressing platform.

[0018] In an embodiment of the present application, the processing device further comprises a sealing rubber ring arranged on the upper cover, and the air film is fixed on the upper cover through the sealing rubber ring.

[0019] The present application further provides a processing method for crystal pressing, which is applied to a processing device, and comprises the following steps:

[0020] uniformly pressing the surface of the crystal, and canceling the pressure when the pressing time reaches the first preset time, so that the pressing is completed;

[0021] re-pressing the crystal and completing the pressing until the number of pressing reaches a preset number;

[0022] when the last pressing is completed, irradiating the ultraviolet curing glue between the crystal and the substrate by ultraviolet light until the irradiation time reaches a second preset time, and then canceling the pressure to obtain a pressed and formed crystal and substrate.

[0023] In an embodiment of the present application, before the step of uniformly pressing the surface of the crystal and canceling the pressure when the pressing time reaches the first preset time, so that the pressing is completed, the method further comprises the following steps:

[0024] adjusting the height of the crystal according to the radius of curvature of different crystals;

[0025] adding ultraviolet curing glue between the crystal and the substrate.

[0026] In an embodiment of the present application, the first preset time is in the range of 20-40 min.

[0027] In an embodiment of the present application, the number of pressing is in the range of 2-4.

[0028] In an embodiment of the present application, the second preset time is in the range of 20-40 min.

[0029] As described above, the present application provides a processing device and a processing method for crystal pressing, which can uniformly apply force to the surface of the crystal, and can press the formed crystal and substrate well through multiple pressing, so that the quality of the product is high. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed for the description of the embodiments will be briefly introduced as follows. Obviously, the drawings described below only show some of the embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art without creative effort based on these drawings also belong to the protection scope of the present application.

[0031] Figure 1 A flow chart of a processing method for crystal compression according to the present application is shown.

[0032] Figure 2 A structural schematic diagram of a processing device for crystal compression according to the present application is shown.

[0033] Figure 3 A sectional view of Figure 2 is shown.

[0034] Figure 4 An exploded view of Figure 2 is shown.

[0035] Figure 5 A front view of Figure 4 is shown.

[0036] Figure 6 A sectional view of Figure 5 is shown.

[0037] Element number explanation:

[0038] 10, upper cover; 20, upper window; 30, flow guide plate; 40, air film; 50, crystal and base; 60, positioning plate; 70, shell; 80, lower window; 90, compression platform. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort belong to the protection scope of the present application.

[0040] Referring to Figure 1 , the present application provides a processing method for crystal compression, which can be applied in the process of crystal compression, and can be used to compress and form a crystal and a base to form an overall structure. The processing method can include the following steps:

[0041] Step S10: adjusting the height of the crystal according to the curvature radius of different crystals.

[0042] In one embodiment of the present application, due to the different sizes of the crystal, the height of the crystal needs to be adjusted according to the radius of curvature of different crystals, so that there is no deviation between the crystal and the substrate during the pressing process. The crystal can be a quartz single crystal, a silicon single crystal, or other semiconductor crystals, and the substrate can also be a quartz single crystal, a silicon single crystal, or other semiconductor crystals.

[0043] Step S20, adding ultraviolet curing glue between the crystal and the substrate.

[0044] In one embodiment of the present application, when the crystal and the substrate need to be pressed, the connecting surface between the crystal and the substrate can be cleaned first to prevent dust and other foreign matter from affecting. Specifically, alcohol can be used to clean the crystal and the substrate, and the surface of the crystal and the substrate can be wiped clean. After wiping is completed, ultraviolet curing glue can be added to the surface of the substrate, and then the crystal is attached to the substrate, so that the connecting surface between the crystal and the substrate is filled with ultraviolet curing glue.

[0045] Step S30, applying a certain pressure to the crystal within a first preset time, and the pressure on the surface of the crystal is uniformly distributed, and when the time of applying pressure reaches the first preset time, the pressure is cancelled.

[0046] In one embodiment of the present application, when the crystal and the substrate are attached, the substrate can be placed on the pressing platform, and at this time the crystal and the substrate are located on the pressing platform. A certain pressure is first applied to the crystal, and after the crystal is subjected to the pressure, an acting force is generated between the crystal and the substrate to press the crystal and the substrate. The size of the pressure can be set according to different sizes of the crystal, and the pressure on the surface of the crystal needs to be uniformly distributed. The uniformly distributed pressure can prevent one side of the crystal from bearing a large pressure and the other side from bearing a small pressure, resulting in a positional deviation between the crystal and the substrate after pressing. The pressing time can be a first preset time, and the size of the first preset time can not be limited and can be in the range of 20-40 min. For example, the pressing time can be 20 min, 30 min, or 40 min. When the time of applying pressure reaches the first preset time, the pressure can be slowly cancelled, and the pressure can be gradually reduced. During the process of reducing the pressure, the pressure on the surface of the crystal needs to be kept uniformly distributed. When the pressure cancellation is completed, it can be considered that the first pressing is completed.

[0047] Step S40, reapplying the pressure between the crystal and the substrate until the pressing times reach a preset number.

[0048] In an embodiment of the present application, when the first pressing is finished, the crystal and the substrate can be taken out and the fitting between the crystal and the substrate is observed. If the fitting between the crystal and the substrate is poor, the crystal and the substrate can be separated at this time, the UV curing glue between the crystal and the substrate can be cleaned by alcohol or the like, and then the UV curing glue is applied between the crystal and the substrate again, and the pressing is performed again. If the fitting between the crystal and the substrate is good, the crystal and the substrate are placed on the pressing platform to perform the pressing process repeatedly until the number of pressings reaches a preset number. The size of the preset number can be unlimited and can be between 2 and 5. For example, the number of pressings can be 2, 3, 4 or 5.

[0049] In step S50, when the last pressing is finished, the UV curing glue is irradiated by the UV light source until the irradiation time reaches a second preset time, and then the pressure is removed to obtain the pressed and formed crystal and substrate.

[0050] In an embodiment of the present application, when the last pressing is finished, the pressure can be removed first, and the UV curing glue is irradiated by the UV light source to make the UV curing glue quickly set. In the crystal and the substrate, one is transparent and the other is non-transparent. Therefore, the UV light source can be aimed at the transparent side to irradiate the UV curing glue by the UV light of the UV light source. When the irradiation time reaches the second preset time, the pressure can be removed slowly, and the pressure can be gradually reduced. During the reduction of the pressure, the pressure on the surface of the crystal is still uniformly distributed. When the pressure removal is finished, it can be considered that the last pressing is finished. At this time, the crystal and the substrate can be taken out, and the crystal and the substrate can form an integral structure to obtain the pressed and formed crystal and substrate. At this time, it can be observed whether the UV curing glue seeps out from the crystal and the substrate, and the seeped UV curing glue can be cleaned by alcohol.

[0051] Please refer to Figure 2 and Figure 3 The present application also provides a processing device for crystal pressing, which can execute the steps of the processing method. The processing device can include an upper cover 10, an upper window 20, a flow guide plate 30, an air film 40, a crystal and a substrate 50, a positioning plate 60, a shell 70, a lower window 80, a pressing platform 90 and a UV light source. The upper cover 10, the shell 70 and the pressing platform 90 can be connected in sequence to form a sealed cavity. The crystal and the substrate 50 can be placed in the sealed cavity, and the crystal and the substrate 50 are pressurized by the sealed cavity to form an integral structure.

[0052] Please refer to Figure 4 ,Figure 5 and Figure 6 As shown, in one embodiment of the present invention, the connection method between the upper cover 10, the housing 70, and the pressing platform 90 is not limited. The upper cover 10 and the housing 70 can be connected by snap-fit ​​or screws, and the housing 70 and the pressing platform 90 can also be connected by snap-fit ​​or screws. In this embodiment, multiple screw holes can be formed on the upper cover 10 at equal angles along the ring, and multiple screw holes can also be formed at corresponding positions on the housing 70 and the pressing platform 90. Screws can pass through the screw holes on the upper cover 10 and the screw holes on the side wall of the housing 70 in sequence, and cooperate with the nuts in the screw holes on the pressing platform 90, so that the upper cover 10, the housing 70, and the pressing platform 90 form an integrally sealed structure.

[0053] Please see Figure 5 and Figure 6 As shown, in one embodiment of the present invention, a sealing ring can be fixed on one side of the upper cover 10. The sealing ring can be adhered to the gas film 40 to form a cavity between the gas film 40 and the interior of the upper cover 10. When gas is blown into the cavity, the gas film 40 can expand outward. Since the crystal and the substrate 50 are placed on the pressing platform 90, when the gas film 40 expands to a certain extent, the gas film 40 will contact the surface of the crystal and the substrate 50 to apply a certain pressure to the crystal and the substrate 50. The magnitude of the pressure is positively correlated with the amount of gas blown into the cavity; the greater the amount of gas blown in, the greater the pressure on the crystal and the substrate 50.

[0054] Please see Figure 5 and Figure 6 As shown, in one embodiment of the present invention, multiple handles may be provided on the upper cover 10 to allow operators to move the processing device at any time. The upper cover 10 may also be provided with an air inlet and an air outlet, through which gas can be blown into the cavity and through which the blown gas can be expelled. The type of gas is not limited and can be nitrogen or carbon dioxide. To guide the gas flow, a guide plate 30 may be fixed to the upper cover 10. The central portion of the guide plate 30 may have a through-hole structure, and an annular guide groove may be provided on the outer side of the through-hole structure, which can communicate with the through-hole structure. When the guide plate 30 is fixed to the upper cover 10, the annular guide groove can be sealed by the upper cover 10. One end of the air inlet and the air outlet may be connected to the annular guide groove, so that the annular guide groove can only communicate with the air inlet, the air outlet, and the through-hole structure. When gas is blown into the air inlet, the gas first passes through the annular guide groove, and then flows into the through-hole structure. The air comes into contact with the air film 40 through the through-hole structure, allowing the air film 40 to expand outward. The fixing method between the guide plate 30 and the upper cover 10 is not limited; it can be connected by screws or by snap-fit.

[0055] Referring to Figure 5 and Figure 6 As shown in the drawings, in one embodiment of the present application, when the air film 40 expands outward and exerts pressure on the crystal and substrate 50, in order to prevent the crystal and substrate 50 from slipping, a positioning plate 60 can be fixed on the pressing platform 90. The positioning plate 60 can be provided with an opening, so that the positioning plate 60 is in the form of a circular ring. The inner diameter of the positioning plate 60 can be greater than the outer diameter of the crystal and substrate 50, so that the crystal and substrate 50 can be placed smoothly on the center of the positioning plate 60. By limiting the crystal and substrate 50 with the positioning plate 60, the crystal and substrate 50 can be effectively prevented from deviating.

[0056] Referring to Figure 5 and Figure 6 As shown in the drawings, in one embodiment of the present application, since one part of the crystal and substrate 50 is transparent and the other part is non-transparent, after the pressing is completed, in order to be able to irradiate the ultraviolet curing glue between the crystal and substrate 50 with an ultraviolet light source, an upper window 20 can be fixed on the upper cover 10, and a lower window 80 can be fixed on the pressing platform 90. The upper window 20 can be fixed on the upper cover 10 by clamping, screwing or bonding, and the lower window 80 can also be fixed on the pressing platform 90 by clamping, screwing or bonding. The upper window 20, the through-hole structure of the flow guide plate 30, the air film 40, the opening of the positioning plate 60 and the axis of the lower window 80 can be on the same straight line, that is, the upper window 20, the through-hole structure of the flow guide plate 30, the air film 40, the opening of the positioning plate 60 and the axis of the lower window 80 are coaxial.

[0057] Referring to Figure 5 and Figure 6As shown, in one embodiment of the present application, when the crystal and the substrate 50 need to be pressed together, the crystal and the substrate 50 can be cleaned first, then the UV-curable glue is applied between the crystal and the substrate 50, and then the crystal and the substrate 50 are placed in the positioning plate 60. At this time, the upper cover 10, the shell 70 and the pressing platform 90 can be fixed by bolts, so that the upper cover 10, the shell 70 and the pressing platform 90 form a sealed structure. The gas inlet in the upper cover 10 is inflated with gas, and the gas passes through the annular flow guide groove and the through hole structure of the flow guide plate 30 in turn, and contacts the gas film 40. As the amount of gas inflated increases, the gas film 40 begins to expand, and when the gas film 40 contacts the crystal and the substrate 50, the gas film 40 can apply a pressure to the crystal and the substrate 50, and the size of the pressure is related to the amount of the gas inflated. When the pressure reaches a certain degree, the gas inflation is stopped. After waiting for the pressing time to reach the first preset time, the gas outlet can be opened at this time, and the gas will be discharged from the gas outlet, at this time the gas film 40 will gradually shrink and separate from the crystal and the substrate 50, and the first pressing is completed. Then the upper cover 10, the shell 70 and the pressing platform 90 can be opened by screws, and the crystal and the substrate 50 can be taken out for observation. After the observation is completed, the crystal and the substrate 50 can be repeatedly pressed until the last pressing is completed, and then the upper viewing window 20 or the lower viewing window 80 is irradiated by the UV light source, so that the UV-curable glue between the crystal and the substrate 50 can be irradiated by the UV light of the UV light source. After waiting for the irradiation time to reach the second preset time, the gas outlet can be opened at this time, and the gas is discharged from the gas outlet. After waiting for the gas to be discharged, the upper cover 10, the shell 70 and the pressing platform 90 can be opened, and the crystal and the substrate 50 can be taken out, and the crystal and the substrate 50 can form an integral structure to obtain the pressed and formed crystal and substrate 50.

[0058] In summary, the crystal pressing treatment device and the treatment method provided by the present application can make the stress on the surface of the crystal uniform, and through multiple pressing, the formed crystal and substrate are pressed better, and the quality of the generated product is higher.

[0059] In the description of the present specification, the description of the terms "the present embodiment", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are contained in at least the embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any or multiple embodiments or examples in a suitable manner.

[0060] The above disclosed embodiments of the present application are only used to help explain the present application. The embodiments do not describe all of the details of the present application, and the present application is not limited to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of the present specification. The present specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can well understand and utilize the present application. The present application is limited only by the claims and their full scope and equivalents.

Claims

1. A crystal pressing processing apparatus characterized by comprising: The application relates to a processing device for crystal pressing, which comprises the following parts: an upper cover provided with an air inlet and an air outlet; a flow guide plate fixed in the upper cover; a through-hole structure arranged on the central part of the flow guide plate; an annular flow guide groove arranged on the flow guide plate and located outside the through-hole structure; an air film arranged on the upper cover and located on one side of the flow guide plate; a shell; a pressing platform, which is detachably connected with the upper cover, the shell and the pressing platform in sequence, and a crystal and a substrate are placed on the pressing platform; and an ultraviolet light source arranged on one side of the upper cover or the pressing platform. The air inlet, the air outlet and the through-hole structure are communicated with the annular flow guide groove; when air is blown into the air inlet, the air film can expand outward and apply uniform pressure to the crystal; when the ultraviolet light source emits ultraviolet light, the ultraviolet light can irradiate ultraviolet curing glue between the crystal and the substrate. The application further comprises an upper viewing window arranged on the upper cover.

2. The crystal pressing processing apparatus according to claim 1, wherein The application further comprises a lower viewing window arranged on the pressing platform.

3. The crystal pressing processing apparatus according to claim 2, wherein The application further comprises a sealing rubber ring arranged on the upper cover, and the air film is fixed on the upper cover through the sealing rubber ring.

4. The crystal pressing treatment apparatus according to claim 1, wherein 5. A processing method for crystal pressing, which is applied to the processing device as claimed in any one of claims 1-4, and the processing method comprises the following steps: uniform pressure is applied to the surface of a crystal, the pressure is cancelled after a first preset time, and pressing is completed at this moment; the pressure is applied to the crystal again, and pressing is completed until the number of pressing reaches a preset number; when the last pressing is completed, ultraviolet light is used to irradiate ultraviolet curing glue between the crystal and a substrate until a second preset time is reached, the pressure is cancelled, and a pressed and shaped crystal and substrate are obtained. Before the step of applying uniform pressure to the surface of a crystal and cancelling the pressure after a first preset time, the following steps are further included:

6. The method of claim 5, wherein the crystal pressing is performed by a method comprising: the height of the crystal is adjusted according to the curvature radius of different crystals; ultraviolet curing glue is added between the crystal and the substrate. The first preset time is in the range of 20-40 min.

7. The method of claim 5, wherein the crystal pressing is performed by a method comprising: The preset number is in the range of 2-4.

8. The method of claim 5, wherein the crystal pressing is performed by a method comprising: The second preset time is in the range of 20-40 min.

9. The method of claim 6, wherein the crystal pressing is performed by a method comprising: ​

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