Semiconductor device assembly and integrated circuit, electric appliance

Abstract

The application discloses a semiconductor device assembly and an integrated circuit and an electrical device. The semiconductor device assembly is applied to an inverter circuit or a rectifier circuit, and comprises a metal substrate, an insulating layer, a circuit wiring layer and a semiconductor device. The insulating layer is arranged on the metal substrate; the circuit wiring layer is arranged on the insulating layer; and the semiconductor device is arranged on the circuit wiring layer and comprises a direct-current electrode and an alternating-current electrode. The direct-current electrode is connected with a direct-current end of the inverter circuit or the rectifier circuit, the alternating-current electrode is connected with an alternating-current end of the inverter circuit or the rectifier circuit, and the alternating-current electrode is arranged on a side of the direct-current electrode which is away from the circuit wiring layer. The application can reduce interference generated by the semiconductor device during operation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a semiconductor device assembly and an integrated circuit and an electrical appliance. BACKGROUND

[0002] With the continuous development of science and technology, more and more electrical appliances will use semiconductor device assemblies. The present application has found that the current semiconductor device assemblies still have certain limitations, which to some extent cause excessive interference of the semiconductor device assemblies during use in the long-term research and development process of the present application. SUMMARY

[0003] The main purpose of the present application is to provide a semiconductor device assembly and an integrated circuit and an electrical appliance, which can solve the problem of excessive interference of the semiconductor device assembly during use.

[0004] To solve the above problems, one technical scheme adopted by the present application is to provide a semiconductor device assembly, which can be applied to an inverter circuit or a rectifier circuit, and the semiconductor device assembly comprises a metal substrate, an insulating layer, a circuit wiring layer and a semiconductor device.

[0005] The insulating layer is arranged on the metal substrate;

[0006] The circuit wiring layer is arranged on the insulating layer;

[0007] The semiconductor device is arranged on the circuit wiring layer, and the semiconductor device comprises a direct current electrode and an alternating current electrode, the direct current electrode is connected to a direct current end of the inverter circuit or the rectifier circuit, the alternating current electrode is connected to an alternating current end of the inverter circuit or the rectifier circuit, and the alternating current electrode is arranged on a side of the direct current electrode away from the circuit wiring layer.

[0008] The semiconductor device comprises a first semiconductor device and a second semiconductor device connected to each other;

[0009] The first semiconductor device comprises a first direct current electrode and a first alternating current electrode, the first direct current electrode is connected to the direct current end, the first alternating current electrode is connected to the alternating current end, and the first alternating current electrode is arranged on a side of the first direct current electrode away from the circuit wiring layer;

[0010] The second semiconductor device comprises a second direct current electrode and a second alternating current electrode, the second direct current electrode is connected to the direct current end and the first direct current electrode, the second alternating current electrode is connected to the alternating current end and the first alternating current electrode, and the second alternating current electrode is arranged on a side of the second direct current electrode away from the circuit wiring layer.

[0011] The circuit wiring layer comprises a plurality of mutually independent circuit wiring areas;

[0012] The first alternating current electrode and the second alternating current electrode are connected to a circuit wiring area without semiconductor devices through a metal wire and are connected to a pin through the circuit wiring area.

[0013] The first semiconductor device is a switching device, and the second semiconductor device is a freewheeling device.

[0014] The first semiconductor device is an insulated gate bipolar transistor, and the second semiconductor device is a fast recovery diode.

[0015] The collector of the first semiconductor device is the first alternating current electrode, and the emitter of the first semiconductor device is the first direct current electrode; the cathode of the second semiconductor device is the second alternating current electrode, and the anode of the second semiconductor device is the second direct current electrode.

[0016] To solve the above problems, one technical scheme adopted by the present application is to provide an integrated circuit, which comprises the above components.

[0017] The integrated circuit comprises at least one inverter unit, each inverter unit comprising an upper bridge arm and a lower bridge arm, the upper bridge arm comprising an upper bridge first semiconductor device and an upper bridge second semiconductor device connected to each other, and the lower bridge arm comprising a lower bridge first semiconductor device and a lower bridge second semiconductor device connected to each other.

[0018] The upper bridge first semiconductor device and the lower bridge first semiconductor device are both insulated gate bipolar transistors, and the upper bridge second semiconductor device and the lower bridge second semiconductor device are both fast recovery diodes.

[0019] The emitter of the upper bridge first semiconductor device is the first alternating current electrode, and the collector of the upper bridge first semiconductor device is the first direct current electrode; the anode of the upper bridge second semiconductor device is the second alternating current electrode, and the cathode of the upper bridge second semiconductor device is the second direct current electrode.

[0020] The collector of the lower bridge first semiconductor device is the first alternating current electrode, and the emitter of the lower bridge first semiconductor device is the first direct current electrode; the cathode of the lower bridge second semiconductor device is the second alternating current electrode, and the anode of the lower bridge second semiconductor device is the second direct current electrode.

[0021] To solve the above problems, one technical scheme adopted by the present application is to provide an electric appliance, which comprises the above integrated circuit.

[0022] The alternating current electrode of the semiconductor device is arranged on the side far from the circuit wiring layer of the direct current electrode, so that the alternating current electrode of the semiconductor device is not directly connected with the circuit wiring area below the semiconductor device, and the capacitor formed by the circuit wiring area below the semiconductor device and the metal substrate cannot be charged and discharged due to the existence of the alternating current electrode of the semiconductor device, that is, the circuit wiring layer below the semiconductor device does not have high-low voltage switching, thereby reducing the area of the circuit wiring layer of the semiconductor device assembly with high-low voltage switching, and then reducing the interference generated by the semiconductor device during operation. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a perspective structural schematic view of an embodiment of the semiconductor device assembly of the present application;

[0024] Figure 2 is another perspective structural schematic view of an embodiment of the semiconductor device assembly of the present application;

[0025] Figure 3 is a schematic view of an embodiment of the integrated circuit of the present application;

[0026] Figure 4 is a structural schematic view of an embodiment of the integrated circuit of the present application;

[0027] Figure 5 is a structural schematic view of an embodiment of the electrical appliance of the present application. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0029] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative positional relationship, movement condition, etc. between components in a certain specific posture (as shown in the drawings), and if the specific posture changes, the directional indications also change accordingly.

[0030] In addition, if the description of "first", "second" and the like is involved in the embodiments of the present application, the description of "first", "second" and the like is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can be explicitly or implicitly included at least one of the features. In addition, the technical solutions of various embodiments can be combined with each other, but it must be based on the realization of ordinary skilled in the art, when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor in the protection scope claimed by the present application.

[0031] The structural layout design of the semiconductor device assembly greatly affects the interference generated by the semiconductor device assembly in the working process. Especially for the semiconductor device assembly with insulated metal substrate architecture in the inverter circuit or rectifier circuit, because the insulating layer between the metal substrate and the circuit wiring layer is thin, there is a large parasitic capacitance, and the alternating current electrode of the semiconductor device is generally directly connected with the circuit wiring area below the semiconductor device, and because the circuit wiring area below the semiconductor device needs to be connected with the semiconductor device, the circuit wiring area below the semiconductor device generally has a large area, so the semiconductor device assembly has a large area of the circuit wiring layer with high and low voltage switching, and the interference generated by the semiconductor device assembly in the working process is also large.

[0032] Based on this, as shown in Figure 1 and Figure 2 the present application provides a semiconductor device assembly 100, Figure 1 is a perspective structural schematic view of an embodiment of the semiconductor device assembly 100 of the present application, Figure 2 is another perspective structural schematic view of an embodiment of the semiconductor device assembly 100 of the present application. The semiconductor device assembly 100 comprises a metal substrate 110, an insulating layer 120, a circuit wiring layer 130 and a semiconductor device 140.

[0033] The metal substrate 110 can be made of steel, molybdenum or titanium and the like.

[0034] The insulating layer 120 is arranged on the metal substrate 110. The insulating layer 120 can be a silicon dioxide layer, a silicon nitride layer and other insulating layers 120.

[0035] The circuit wiring layer 130 is arranged on the insulating layer 120. It can be understood that the circuit wiring layer 130 can include at least two independent circuit wiring areas 131. Any two circuit wiring areas 131 are not directly connected.

[0036] The semiconductor device 140 is arranged on the circuit wiring layer 130. Optionally, the semiconductor device 140 can be arranged on the circuit wiring layer 130 by soldering or the like.

[0037] The semiconductor device 140 comprises a direct current electrode 141 and an alternating current electrode 142, the direct current electrode 141 is connected to a direct current end of an inverter circuit or a rectifier circuit, the alternating current electrode 142 is connected to an alternating current end of the inverter circuit or the rectifier circuit, the alternating current electrode 142 is arranged on a side of the direct current electrode 141 away from the circuit wiring layer 130, so that the alternating current electrode 142 of the semiconductor device 140 is not directly connected to the circuit wiring area 131 below the semiconductor device 140, thus the capacitor formed by the circuit wiring area 131 below the semiconductor device 140 and the metal base plate 110 will not be charged and discharged due to the existence of the alternating current electrode 142 of the semiconductor device 140, that is, the circuit wiring layer 130 below the semiconductor device 140 does not have high-low voltage switching, thus the area of the circuit wiring layer 130 of the semiconductor device assembly 100 having high-low voltage switching is reduced, and then the interference generated by the semiconductor device 140 in the working process is reduced. The semiconductor device 140 can be a diode, a triode, a power transistor or any other discrete device made of semiconductor material, of course, not limited thereto.

[0038] Preferably, the alternating current electrode 142 of the semiconductor device 140 can be connected to the circuit wiring area 131 not provided with the semiconductor device 140 through the metal wire 150, so that the circuit wiring area 131 having high-low voltage switching can be changed from the circuit wiring area 131 below the semiconductor device 140 to the circuit wiring area 131 not provided with the semiconductor device 140 by connecting the alternating current electrode 142 through a circuit wiring area 131 not provided with the semiconductor device 140, the area of the circuit wiring area 131 not provided with the semiconductor device 140 in the semiconductor device assembly 100 will be small, so that the area of the circuit wiring layer 130 of the semiconductor device assembly 100 having high-low voltage switching is reduced, and then the interference generated by the semiconductor device 140 in the working process is reduced.

[0039] In other embodiments, in the case where the alternating current electrode 142 of the semiconductor device 140 does not need to be led out through the pin 160, the alternating current electrode 142 of the two semiconductor devices 140 to be connected can be directly connected through the metal wire 150, so that the area of the circuit wiring layer 130 having high-low voltage switching will not be increased due to the existence of the two semiconductor devices 140 to be connected, and thus the interference generated by the semiconductor device 140 in the working process can be reduced.

[0040] The direct current electrode 141 of the semiconductor device 140 with relatively constant voltage can be directly connected to the circuit layout area 131 connected to the semiconductor device 140, so as to avoid the circuit layout area 131 connected to the semiconductor device 140 having high-low voltage switching, thereby reducing the area of the circuit layout layer 130 having high-low voltage switching, and reducing interference.

[0041] Optionally, the semiconductor device 140 can include a first semiconductor device and a second semiconductor device connected to each other. The first semiconductor device includes a first direct current electrode and a first alternating current electrode, wherein the first direct current electrode is connected to a direct current end of an inverter circuit or a rectifier circuit, the first alternating current electrode is connected to an alternating current end of the inverter circuit or the rectifier circuit, and the first alternating current electrode is arranged on a side of the first direct current electrode away from the circuit layout layer 130. The second semiconductor device includes a second direct current electrode and a second alternating current electrode, wherein the second direct current electrode is connected to the direct current end of the inverter circuit or the rectifier circuit, the second alternating current electrode is connected to the alternating current end of the inverter circuit or the rectifier circuit, and the second alternating current electrode is also directly connected to the first alternating current electrode of the first semiconductor device, and the second alternating current electrode is arranged on a side of the second direct current electrode away from the circuit layout layer 130, so that the alternating current electrodes 142 of the two semiconductor devices 140 connected to each other are not connected to the circuit layout areas 131 below the semiconductor devices 140, thereby reducing the area of the circuit layout area 131 of the semiconductor device assembly 100 having high-low voltage switching, and reducing interference generated by the semiconductor device 140 during operation. The number of the second semiconductor device is at least one, and specifically, the semiconductor device 140 with the alternating current electrode 142 directly connected to the first alternating current electrode can be taken as the second semiconductor device.

[0042] Preferably, the first alternating current electrode and the second alternating current electrode are connected to the circuit layout area 131 without the semiconductor device 140 through the interconnection metal line 150, and are connected to the pin 160 through the circuit layout area 131, so that the alternating current electrodes 142 of at least two semiconductor devices 140 are connected through one circuit layout area 131 without the semiconductor device 140, thereby avoiding the circuit layout areas 131 below the at least two semiconductor devices 140 having high-low voltage switching, so that the area of the circuit layout layer 130 of the semiconductor device assembly 100 having high-low voltage switching is smaller, and interference generated by the semiconductor device assembly 100 during operation is smaller.

[0043] In one implementation, the first semiconductor device can be a switching device. The second semiconductor device is connected in parallel with the first semiconductor device, and the second semiconductor device can be a freewheeling device. This freewheeling device prevents sudden changes in voltage and current in the circuit when the switching state of the switching device changes. The freewheeling device provides a path for dissipating the back electromotive force, thus smoothing the current. For example, the first semiconductor device is an Insulated Gate Bipolar Transistor (IGBT), and the second semiconductor device is a Fast Recovery Diode (FRD). The first semiconductor device has a first AC electrode as its collector and a first DC electrode as its emitter. The emitter of the first semiconductor device is directly connected to the circuit wiring layer 130, and the collector of the first semiconductor device is located on the side of the emitter away from the circuit wiring layer 130. The second semiconductor device has a second AC electrode as its cathode and a second DC electrode as its anode. The anode of the second semiconductor device is directly connected to the circuit wiring layer 130, and the cathode of the second semiconductor device is located on the side of the anode away from the circuit wiring layer 130. The collector of the first semiconductor device and the cathode of the second semiconductor device are connected to the circuit wiring area 131 (where no semiconductor device 140 is located) through an interconnecting metal line 150, and are connected to pin 160 through the circuit wiring area 131. This ensures that other circuits can be directly connected to the collector of the first semiconductor device through pin 160, and also reduces the area of ​​the circuit wiring layer 130 for high-low voltage switching in the semiconductor device assembly 100, thereby reducing the interference generated by the semiconductor device assembly 100 during operation.

[0044] In this embodiment, the AC electrode 142 of the semiconductor device 140 is disposed on the side of the DC electrode 141 away from the circuit wiring layer 130, so that the AC electrode 142 of the semiconductor device 140 is not directly connected to the circuit wiring area 131 below the semiconductor device 140. As a result, the capacitor formed by the circuit wiring area 131 below the semiconductor device 140 and the metal substrate 110 will not charge or discharge due to the presence of the AC electrode 142 of the semiconductor device 140. That is, the circuit wiring layer 130 below the semiconductor device 140 does not have high-low voltage switching, thereby reducing the area of ​​the circuit wiring layer 130 with high-low voltage switching in the semiconductor device assembly 100, and thus reducing the interference generated by the semiconductor device assembly 100 during operation.

[0045] Please see Figure 3 and Figure 4 , Figure 3 This is a schematic diagram of one embodiment of the integrated circuit 200 of this application. Figure 4Fig. 2 is a structural schematic diagram of another embodiment of the integrated circuit 200. The integrated circuit 200 includes a metal substrate 201, an insulating layer 202, circuit wiring layers, and semiconductor devices.

[0046] The semiconductor device includes a direct current electrode and an alternating current electrode. The direct current electrode is connected to a direct current terminal of an inverter circuit or a rectifier circuit, and the alternating current electrode is connected to an alternating current terminal of the inverter circuit or the rectifier circuit. The alternating current electrode is arranged on a side of the direct current electrode away from the circuit wiring layer, so that the alternating current electrode of the semiconductor device is not directly connected to the circuit wiring area (2030, 2034, 2035, and 2036) connected to the semiconductor device, thereby reducing the area of the circuit wiring layer of the integrated circuit having high and low voltage switching, and further reducing the interference generated by the integrated circuit during operation.

[0047] Optionally, the integrated circuit 200 can include at least one inverter unit. The number of inverter units in the integrated circuit 200 can be set according to actual conditions, for example, as shown in Figure 3 The integrated circuit 200 can include three inverter units to output three-phase alternating current U, V, and W through the three inverter units. In other embodiments, the integrated circuit 200 can include two inverter units to output two-phase alternating current U and V through the two inverter units.

[0048] For example, each inverter unit includes an upper bridge arm and a lower bridge arm. The upper bridge arm includes an upper bridge first semiconductor device and an upper bridge second semiconductor device connected to each other. The lower bridge arm includes a lower bridge first semiconductor device and a lower bridge second semiconductor device connected to each other. The upper bridge first semiconductor device and the lower bridge first semiconductor device can have the same structure, but the positions of the alternating current electrode and the direct current electrode in the upper bridge first semiconductor device and the lower bridge first semiconductor device can be different. Correspondingly, the upper bridge second semiconductor device and the lower bridge second semiconductor device can have the same structure, but the positions of the alternating current electrode and the direct current electrode in the upper bridge second semiconductor device and the lower bridge second semiconductor device can be different.

[0049] For example, as shown in Figure 4As shown, the first semiconductor devices of the upper bridge and the lower bridge are both insulated gate bipolar transistors, wherein the emitter of the first semiconductor device of the upper bridge is the first alternating current electrode, and the collector of the first semiconductor device of the upper bridge is the first direct current electrode; the collector of the first semiconductor device of the lower bridge is the first alternating current electrode, and the emitter of the first semiconductor device of the lower bridge is the first direct current electrode. The second semiconductor devices of the upper bridge and the lower bridge are both fast recovery diodes; the anode of the second semiconductor device of the upper bridge is the second alternating current electrode, and the cathode of the second semiconductor device of the upper bridge is the second direct current electrode; the cathode of the second semiconductor device of the lower bridge is the second alternating current electrode, and the anode of the second semiconductor device of the lower bridge is the second direct current electrode. At this time, the collector of the first semiconductor device (2051, 2052 and 2053) of the upper bridge and the cathode of the second semiconductor device (2061, 2062 and 2063) of the upper bridge are directly connected to the circuit wiring area 2030, and the emitter of the first semiconductor device (2051, 2052 and 2053) of the upper bridge and the anode of the second semiconductor device (2061, 2062 and 2063) of the upper bridge are not directly connected to the circuit wiring area 2030, the emitter of the first semiconductor device 2051 of the upper bridge and the anode of the second semiconductor device 2061 of the upper bridge are connected to the circuit wiring area 2031 through the interconnection metal line 207, the emitter of the first semiconductor device 2052 of the upper bridge and the anode of the second semiconductor device 2062 of the upper bridge are connected to the circuit wiring area 2032 through the interconnection metal line 207, and the emitter of the first semiconductor device 2053 of the upper bridge and the anode of the second semiconductor device 2063 of the upper bridge are connected to the circuit wiring area 2033 through the interconnection metal line 207. In addition, the emitter of the first semiconductor device 2054 of the lower bridge and the anode of the second semiconductor device 2064 of the lower bridge are directly connected to the circuit wiring area 2034, the emitter of the first semiconductor device 2055 of the lower bridge and the anode of the second semiconductor device 2065 of the lower bridge are directly connected to the circuit wiring area 2035, and the emitter of the first semiconductor device 2056 of the lower bridge and the anode of the second semiconductor device 2066 of the lower bridge are directly connected to the circuit wiring area 2036, and the emitter of the first semiconductor device (2054, 2055 and 2056) of the lower bridge and the anode of the second semiconductor device (2064, 2065 and 2066) of the lower bridge are not directly connected to the corresponding circuit wiring area (2034, 2035 and 2036), the collector of the first semiconductor device 2054 of the lower bridge and the cathode of the second semiconductor device 2064 of the lower bridge are connected to the circuit wiring area 2031 through the interconnection metal line 207, the collector of the first semiconductor device 2055 of the lower bridge and the cathode of the second semiconductor device 2065 of the lower bridge are connected to the circuit wiring area 2032 through the interconnection metal line 207, and the collector of the first semiconductor device 2056 of the lower bridge and the cathode of the second semiconductor device 2066 of the lower bridge are connected to the circuit wiring area 2033 through the interconnection metal line 207.The circuit wiring areas (2031, 2032 and 2033) are circuit wiring areas without semiconductor devices, and each of the circuit wiring areas (2031, 2032 and 2033) is connected to the pin 208 one-to-one.

[0050] Further, each inverter unit can further include a gate drive chip (HVIC) (2041, 2042 and 2043), and the gate drive chip (2041, 2042 and 2043) in each inverter unit is connected to the gates of the upper bridge first semiconductor device (2051, 2052 and 2053) and the lower bridge first semiconductor device (2054, 2055 and 2056) in the inverter unit, so as to drive and control the upper bridge first semiconductor device (2051, 2052 and 2053) and the lower bridge first semiconductor device (2054, 2055 and 2056) through the gate drive chip (2041, 2042 and 2043).

[0051] Please refer to Figure 5 , Figure 5 is a structural schematic diagram of an embodiment of the electric appliance 300. The electric appliance 300 includes the integrated circuit 310 described above, wherein the integrated circuit 310 has the same structure as the integrated circuit 200 in any of the above embodiments, and the specific structure can be referred to the above embodiments, which will not be described here. The electric appliance 300 can be a household appliance, such as a washing machine, a dishwasher, an electric rice cooker, an electric pressure cooker, an electric stew pot or an oven.

[0052] The above is only an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, is also included in the patent protection scope of the present application.

Claims

1. An integrated circuit, characterized by The integrated circuit is an inverter circuit or a rectifier circuit, and the integrated circuit comprises: a metal substrate; an insulating layer disposed on the metal substrate; a circuit wiring layer disposed on the insulating layer; a plurality of semiconductor devices disposed on the circuit wiring layer, comprising a direct current electrode and an alternating current electrode, the direct current electrode being connected to a direct current terminal of the inverter circuit or the rectifier circuit, the alternating current electrode being connected to an alternating current terminal of the inverter circuit or the rectifier circuit, the alternating current electrode being disposed on a side of the direct current electrode away from the circuit wiring layer, and the alternating current electrodes of all the semiconductor devices being connected to a circuit wiring area not provided with the semiconductor devices by a metal wire, so that a capacitor formed by a circuit wiring area below the semiconductor device and the metal substrate cannot be charged and discharged due to the presence of the alternating current electrode of the semiconductor device.

2. The integrated circuit of claim 1, wherein, The semiconductor devices comprise a first semiconductor device and a second semiconductor device connected to each other; the first semiconductor device comprises a first direct current electrode and a first alternating current electrode, the first direct current electrode being connected to the direct current terminal, and the first alternating current electrode being connected to the alternating current terminal and being disposed on a side of the first direct current electrode away from the circuit wiring layer; the second semiconductor device comprises a second direct current electrode and a second alternating current electrode, the second direct current electrode being connected to the direct current terminal and the first direct current electrode, and the second alternating current electrode being connected to the alternating current terminal and the first alternating current electrode and being disposed on a side of the second direct current electrode away from the circuit wiring layer.

3. The integrated circuit of claim 2, wherein, The circuit wiring layer comprises a plurality of circuit wiring areas independent of each other; the first alternating current electrode and the second alternating current electrode are connected to the circuit wiring area not provided with the semiconductor devices by the metal wire and are connected to a pin through the circuit wiring area.

4. The integrated circuit of claim 2, wherein, The first semiconductor device is a switching device, and the second semiconductor device is a freewheeling device.

5. The integrated circuit of claim 4, wherein, The first semiconductor device is an insulated gate bipolar transistor, and the second semiconductor device is a fast recovery diode.

6. The integrated circuit of claim 5, wherein, The collector of the first semiconductor device is the first alternating current electrode, and the emitter of the first semiconductor device is the first direct current electrode; the cathode of the second semiconductor device is the second alternating current electrode, and the anode of the second semiconductor device is the second direct current electrode.

7. The integrated circuit of claim 1, wherein, The integrated circuit comprises at least one inverter unit, each inverter unit comprising an upper bridge arm and a lower bridge arm, the upper bridge arm comprising an upper bridge first semiconductor device and an upper bridge second semiconductor device connected to each other, and the lower bridge arm comprising a lower bridge first semiconductor device and a lower bridge second semiconductor device connected to each other.

8. The integrated circuit of claim 7, wherein, The upper bridge first semiconductor device and the lower bridge first semiconductor device are both insulated gate bipolar transistors, and the upper bridge second semiconductor device and the lower bridge second semiconductor device are both fast recovery diodes; the emitter of the upper bridge first semiconductor device is the first alternating current electrode, and the collector of the upper bridge first semiconductor device is the first direct current electrode; the anode of the upper bridge second semiconductor device is the second alternating current electrode, and the cathode of the upper bridge second semiconductor device is the second direct current electrode; The collector of the first semiconductor device of the lower bridge is a first alternating current electrode, and the emitter of the first semiconductor device of the lower bridge is a first direct current electrode; the cathode of the second semiconductor device of the lower bridge is a second alternating current electrode, and the anode of the second semiconductor device of the lower bridge is a second direct current electrode.

9. An electrical appliance, characterized in that The electrical appliance comprises the integrated circuit according to any one of claims 1-8.

Images