Light emitting diode packaging structure and manufacturing method thereof and display device manufacturing method

Abstract

The present invention provides a light-emitting diode packaging structure, a manufacturing method thereof, and a manufacturing method of a display device. The light-emitting diode packaging structure includes a glass substrate, a plurality of conductive through holes, a plurality of active components, an insulating layer, a plurality of light-emitting diodes, and a plurality of pads. The glass substrate has an upper surface and a lower surface opposite to each other. The conductive through hole penetrates the glass substrate and connects the upper surface and the lower surface. The active component is arranged on the upper surface of the glass substrate and is electrically connected to the conductive through hole. The insulating layer is arranged on the upper surface of the glass substrate and covers the active component. The light-emitting diode is arranged on the insulating layer and is electrically connected to at least one of the active components. The pad is arranged on the lower surface of the glass substrate and is electrically connected to the conductive through hole. The source of at least one of the active components is directly electrically connected to at least one of the corresponding pads through the corresponding conductive through hole.

Description

Technical Field

[0001] The present invention relates to a packaging structure and a manufacturing method thereof, and in particular to a light emitting diode packaging structure and a manufacturing method thereof, and a manufacturing method of a display device having the light emitting diode packaging structure. Background Art

[0002] The current assembly method of active micro-LED displays is to first transfer the micro-LEDs to a large-sized thin film transistor (TFT) substrate by mass transfer, and then splice the above-mentioned overall structure to a circuit board to form a complete display. However, the above-mentioned assembly method faces many problems, including 1.) the large-sized thin film transistor substrate has a large warpage, so when spliced ​​to the circuit board, it is easy to warp, which can easily increase the difficulty of the packaging back-end process; 2.) If there are thin film transistors that need to be repaired in the large-sized thin film transistor substrate, because the micro-LEDs have been transferred to it in large quantities, the repair is very difficult and difficult; 3.) The thin film transistor substrate is based on glass as the base material, so it is impossible to directly weld external circuits or electronic components on its back. Based on the above three factors, not only the production yield of active micro-LED displays is reduced, but also the difficulty of manufacturing large-sized, high-unit pixel displays is increased. Summary of the invention

[0003] The present invention is directed to a light emitting diode packaging structure and a manufacturing method thereof, which connects active components and pads located on two opposite surfaces of a glass substrate through conductive through holes penetrating the glass substrate, and is suitable for direct welding to other external circuits or electronic components through pads located under the glass substrate.

[0004] The present invention is also directed to a method for manufacturing a display device, including the above-mentioned light emitting diode packaging structure, which can solve the existing problems and has better structural reliability.

[0005] According to an embodiment of the present invention, a light-emitting diode packaging structure includes a glass substrate, a plurality of conductive through holes, a plurality of active components, an insulating layer, a plurality of light-emitting diodes, and a plurality of pads. The glass substrate has an upper surface and a lower surface opposite to each other. The conductive through hole penetrates the glass substrate and connects the upper surface and the lower surface. The active component is arranged on the upper surface of the glass substrate and is electrically connected to the conductive through hole. The insulating layer is arranged on the upper surface of the glass substrate and covers the active component. The light-emitting diode is arranged on the insulating layer and is electrically connected to at least one of the active components. The pad is arranged on the lower surface of the glass substrate and is electrically connected to the conductive through hole. The source of at least one of the active components is directly electrically connected to at least one of the corresponding pads through the corresponding conductive through hole.

[0006] In the light-emitting diode packaging structure according to an embodiment of the present invention, each of the above-mentioned active components includes a gate, a source, a gate insulating layer, an active layer, and a drain. The gate is disposed on the upper surface of the glass substrate. The source is disposed on the upper surface of the glass substrate, wherein the gate and the source belong to the same film layer. The gate insulating layer is disposed on the upper surface of the glass substrate and covers the gate. The active layer is disposed on the upper surface of the glass substrate and covers the gate insulating layer and a portion of the source. The drain is disposed on the active layer, wherein the light-emitting diodes are electrically connected to the drains in the active components, respectively.

[0007] In the light emitting diode package structure according to the embodiment of the present invention, the pad is electrically connected to the source and the gate of each active device through the conductive via.

[0008] In the light-emitting diode package structure according to the embodiment of the present invention, the light-emitting diode package structure further includes a reconfiguration circuit layer, which is configured on the lower surface of the glass substrate and includes at least one reconfiguration circuit, a plurality of conductive holes and pads. The conductive holes connect the reconfiguration circuit with the conductive through holes and connect the reconfiguration circuit with the pads. The gate of each active element is electrically connected to the pad of the reconfiguration circuit layer through the conductive through holes.

[0009] In the light-emitting diode package structure according to the embodiment of the present invention, the light-emitting diode package structure further includes a patterned circuit layer and a plurality of conductive holes. The patterned circuit layer is disposed on the insulating layer. The conductive holes are disposed in the insulating layer and electrically connect the patterned circuit layer with the drain of each active component. The light-emitting diode is electrically connected to the active component through the patterned circuit layer and the conductive holes.

[0010] In the light-emitting diode package structure according to an embodiment of the present invention, the above-mentioned active element includes a first active element and a second active element. The first active element includes a first gate, a first source, a first active layer, a first gate insulating layer and a first drain. The first gate, the first source, the first active layer and the first gate insulating layer are arranged on the upper surface of the glass substrate. The first gate and the first source belong to the same film layer. The first gate insulating layer covers the first gate. The first active layer covers the first gate insulating layer and a portion of the first source. The first drain is arranged on the first active layer. The second active element includes a second gate, a source, a second active layer, a second gate insulating layer and a second drain. The second gate, the source, the second active layer, the second gate insulating layer and the second drain are arranged on the upper surface of the glass substrate. The second gate, the source and the second drain belong to the same film layer. The second gate insulating layer covers the second gate. The second active layer covers the second gate insulating layer, a portion of the source and a portion of the second drain. The conductive via is electrically connected to the first gate of the first active element and the second gate, the source and the second drain of the second active element.

[0011] In the LED package structure according to the embodiment of the present invention, the LED package structure further includes a first reconfiguration circuit layer configured on the insulating layer. The LED is electrically connected to the first drain of the first active device through the first reconfiguration circuit layer.

[0012] In the light-emitting diode package structure according to the embodiment of the present invention, the light-emitting diode package structure further includes a second reconfiguration circuit layer, which is configured on the lower surface of the glass substrate and includes at least one reconfiguration circuit, a plurality of conductive holes and pads. The conductive holes connect the reconfiguration circuit with the conductive through holes and connect the reconfiguration circuit with the pads. The second gate and source of the second active element are electrically connected to the pads of the second reconfiguration circuit layer through the conductive through holes.

[0013] In the LED package structure according to the embodiment of the present invention, the LED package structure further includes a passive component embedded in the second reconfiguration circuit layer. The conductive vias connected to the first gate of the first active component and the second drain of the second active component are electrically connected to the passive component.

[0014] According to an embodiment of the present invention, a method for manufacturing a light-emitting diode packaging structure includes the following steps. A glass substrate is provided. The glass substrate has an upper surface and a lower surface opposite to each other. A plurality of conductive vias are formed through the glass substrate. The conductive vias connect the upper surface and the lower surface. A plurality of active components are formed on the upper surface of the glass substrate. The active components are electrically connected to the conductive vias. An insulating layer is formed on the upper surface of the glass substrate, and the insulating layer covers the active components. A plurality of light-emitting diodes are bonded to the insulating layer. The light-emitting diode is electrically connected to at least one of the active components. A plurality of pads are formed on the lower surface of the glass substrate and electrically connected to the conductive vias. The source of at least one of the active components is directly electrically connected to at least one of the corresponding pads through the corresponding conductive vias.

[0015] In the method for manufacturing a light-emitting diode package structure according to an embodiment of the present invention, the step of forming each active element on the upper surface of the glass substrate includes: forming a gate and a source on the upper surface of the glass substrate, wherein the gate and the source belong to the same film layer; forming a gate insulating layer on the upper surface of the glass substrate, wherein the gate insulating layer covers the gate; forming an active layer on the upper surface of the glass substrate, wherein the active layer covers the gate insulating layer and a portion of the source; forming a drain on the active layer, wherein the light-emitting diode is electrically connected to the drain in each active element respectively.

[0016] In the method for manufacturing the LED package structure according to the embodiment of the present invention, when forming the gate and source, a pad is formed on the lower surface of the glass substrate at the same time. The pad is electrically connected to the source and gate of each active element through a conductive through hole.

[0017] In the method for manufacturing a light-emitting diode package structure according to an embodiment of the present invention, the method for manufacturing a light-emitting diode package structure further includes: forming a reconfiguration circuit layer on the lower surface of the glass substrate. The reconfiguration circuit layer includes at least one reconfiguration circuit, a plurality of conductive holes and a pad. The conductive hole connects the reconfiguration circuit with the conductive through hole and connects the reconfiguration circuit with the pad. The gate of each active element is electrically connected to the pad of the reconfiguration circuit layer through the conductive through hole.

[0018] In the method for manufacturing a light-emitting diode package structure according to an embodiment of the present invention, after forming the insulating layer and before providing the light-emitting diode, the method further includes: forming a patterned circuit layer and a plurality of conductive holes. The patterned circuit layer is disposed on the insulating layer, and the conductive holes are disposed in the insulating layer and electrically connect the patterned circuit layer and the drain of each active element. The light-emitting diode is electrically connected to the active element through the patterned circuit layer and the conductive holes.

[0019] In the method for manufacturing a light emitting diode package structure according to an embodiment of the present invention, the active element includes a first active element and a second active element. The first active element includes a first gate, a first source, a first active layer, a first gate insulating layer and a first drain. The first gate, the first source, the first active layer and the first gate insulating layer are arranged on the upper surface of a glass substrate. The first gate and the first source belong to the same film layer. The first gate insulating layer covers the first gate, the first active layer covers the first gate insulating layer and a portion of the first source, and the first drain is arranged on the first active layer. The second active element includes a second gate, a source, a second active layer, a second gate insulating layer and a second drain. The second gate, the source, the second active layer, the second gate insulating layer and the second drain are arranged on the upper surface of the glass substrate. The second gate, the source and the second drain belong to the same film layer. The second gate insulating layer covers the second gate, and the second active layer covers the second gate insulating layer, a portion of the source and a portion of the second drain. The conductive via is electrically connected to the first gate of the first active element and the second gate, the source and the second drain of the second active element.

[0020] In the method for manufacturing a light emitting diode package structure according to an embodiment of the present invention, the method for manufacturing a light emitting diode package structure further comprises: forming a first reconfiguration circuit layer on the insulation layer after forming the insulation layer and before providing the light emitting diode. The light emitting diode is electrically connected to the first drain of the first active element through the first reconfiguration circuit layer.

[0021] In the method for manufacturing a light-emitting diode package structure according to an embodiment of the present invention, the method for manufacturing a light-emitting diode package structure further includes: forming a second reconfiguration circuit layer on the lower surface of the glass substrate. The second reconfiguration circuit layer includes at least one reconfiguration circuit, a plurality of conductive holes and a pad. The conductive hole connects the reconfiguration circuit with the conductive through hole and connects the reconfiguration circuit with the pad. The second gate and source of the second active element are electrically connected to the pad of the second reconfiguration circuit layer through the conductive through hole.

[0022] In the method for manufacturing a light emitting diode package structure according to an embodiment of the present invention, the method for manufacturing a light emitting diode package structure further comprises: embedding a passive component in the second reconfiguration circuit layer, and electrically connecting the first gate of the first active component and the second drain of the second active component to the passive component.

[0023] According to an embodiment of the present invention, a method for manufacturing a display device includes the following steps. A carrier is provided. A light-emitting diode package structure is provided. The light-emitting diode package structure includes a glass substrate, a plurality of conductive through holes, a plurality of active components, an insulating layer, a plurality of light-emitting diodes, and a plurality of pads. The glass substrate has an upper surface and a lower surface opposite to each other. The conductive through hole penetrates the glass substrate and connects the upper surface and the lower surface. The active component is disposed on the upper surface of the glass substrate and is electrically connected to the conductive through hole. The insulating layer is disposed on the upper surface of the glass substrate and covers the active component. The light-emitting diode is disposed on the insulating layer and is electrically connected to at least one of the active components. The pad is disposed on the lower surface of the glass substrate and is electrically connected to the conductive through hole. The source of at least one of the active components is directly electrically connected to at least one of the corresponding pads through the corresponding conductive through hole. The light-emitting diode package structure is monomerized to form a plurality of independent light-emitting diode package units. The light-emitting diode package units are assembled onto the carrier to form a display device, wherein each light-emitting diode package unit is directly electrically connected to the carrier through the pad.

[0024] In the manufacturing method of the display device according to the embodiment of the present invention, the number of light-emitting diodes in each light-emitting diode packaging unit is three, and the light-emitting diodes are respectively a red micro light-emitting diode, a green micro light-emitting diode and a blue micro light-emitting diode.

[0025] Based on the above, in the light-emitting diode packaging structure and the manufacturing method thereof of the present invention, the conductive through hole penetrates the glass substrate and electrically connects the active element located on the upper surface and the pad located on the lower surface, wherein the source electrode in at least one active element is directly electrically connected to the corresponding pad through the corresponding conductive through hole, and the light-emitting diode is electrically connected to the active element. Thus, by subsequently singulating the light-emitting diode packaging structure mentioned above, independent light-emitting diode packaging units with pads can be formed, and the light-emitting diode packaging units can be directly electrically connected to the carrier through the pads to complete the manufacturing of the display device. Compared with the prior art, in which a large-sized thin-film transistor substrate and a large number of micro-light-emitting diodes transferred thereon are spliced ​​to a circuit board, the present invention uses small-sized light-emitting diode packaging units after singulation to be spliced ​​to the carrier, so there will be no problem of substrate warping. In addition, if there is damage and needs to be repaired, the damaged light-emitting diode packaging unit can be directly replaced with a good light-emitting diode packaging unit, which is relatively simple and can reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG. 1A to FIG. 1I is a cross-sectional schematic diagram of a method for manufacturing a light emitting diode packaging structure according to an embodiment of the present invention;

[0027] Figure 2A and Figure 2B is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram thereof according to another embodiment of the present invention;

[0028] Figure 2C and Figure 2D is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram thereof according to another embodiment of the present invention;

[0029] Figure 2E and Figure 2F is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram thereof according to another embodiment of the present invention;

[0030] Figure 2G is a cross-sectional schematic diagram of a light emitting diode packaging structure according to another embodiment of the present invention;

[0031] FIG. 3A to FIG. 3D It is a cross-sectional schematic diagram of a method for manufacturing a display device according to an embodiment of the present invention.

[0032] Description of Reference Numerals

[0033] 100a, 100b1, 100b2, 100b3, 100c: light emitting diode packaging structure;

[0034] 110: glass substrate;

[0035] 111: upper surface;

[0036] 113: lower surface;

[0037] 120: conductive through hole;

[0038] 132, 134: connection pad;

[0039] 140: insulating layer;

[0040] 152: patterned circuit layer;

[0041] 154: conductive hole;

[0042] 160a, 160b, 160c: light emitting diodes;

[0043] 162a, 162b, 162c, 164a, 164b, 164c: pads;

[0044] 170a, 170b, 170c: reconfiguration circuit layer;

[0045] 172: reconfigure circuit;

[0046] 174, 176: conductive holes;

[0047] 178a1, 178a2, 178a3, 178b1, 178b3, 178b5, 178b6, 178b7, 178c1,

[0048] 178c2, 178c5, 178c6, 178c7: pads;

[0049] 180: first reconfiguration circuit layer;

[0050] 182, 184: reconfigure circuit;

[0051] 186, 188: conductive holes;

[0052] 190: second reconfiguration circuit layer;

[0053] 192: reconfigure circuit;

[0054] 194, 196: conductive holes;

[0055] 198a, 198b, 198c: pads;

[0056] 195: Passive components;

[0057] 200: display device;

[0058] A: Active layer;

[0059] A1: first active layer;

[0060] A2: The second active layer;

[0061] D: drain;

[0062] D1: first drain;

[0063] D2: second drain;

[0064] E: Active components;

[0065] E1: first active element;

[0066] E2: second active element;

[0067] G: gate;

[0068] G1: first gate;

[0069] G2: second gate;

[0070] I: gate insulating layer;

[0071] I1: a first gate insulating layer;

[0072] I2: second gate insulating layer;

[0073] P: carrier board;

[0074] S, S2: source;

[0075] S1: first source;

[0076] T: through hole;

[0077] U: Light emitting diode packaging unit. DETAILED DESCRIPTION

[0078] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0079] FIG. 1A to FIG. 1I is a cross-sectional schematic diagram of a method for manufacturing a light emitting diode packaging structure according to an embodiment of the present invention. Figure 1A Regarding the manufacturing method of the light emitting diode package structure of the present embodiment, first, a glass substrate 110 is provided, wherein the glass substrate 110 has an upper surface 111 and a lower surface 113 opposite to each other. Here, the glass substrate 110 also has a plurality of through holes T, wherein the through holes T penetrate the glass substrate 110 and connect the upper surface 111 and the lower surface 113.

[0080] Next, please refer to Figure 1B, a conductive material is electroplated in the through hole T to form a plurality of conductive vias 120 penetrating the glass substrate 110 , wherein the conductive vias 120 connect the upper surface 111 and the lower surface 113 of the glass substrate 110 .

[0081] Next, please refer to Figure 1F , forming a plurality of active elements E on the upper surface 111 of the glass substrate 110, wherein the active elements E are electrically connected to the conductive vias 120. Specifically, the steps of forming the active elements E are as follows: first, refer to Figure 1C , forming a gate G and a source S on the upper surface 111 of the glass substrate 110, wherein the gate G and the source S belong to the same film layer. When forming the gate G and the source S, pads 132 and 134 are formed on the lower surface 113 of the glass substrate 110 at the same time, wherein the pads 132 and 134 are electrically connected to the conductive vias 120 respectively. Here, the pads 132 and 134 are connected to each active element E (see Figure 1F )'s source S and gate G are electrically connected.

[0082] Next, please refer to Figure 1D , a gate insulating layer I is formed on the upper surface 111 of the glass substrate 110, wherein the gate insulating layer I covers the gate G and a portion of the upper surface 111. Figure 1E , an active layer A is formed on the upper surface 111 of the glass substrate 110, wherein the active layer A covers the gate insulating layer I, a portion of the source S and a portion of the upper surface 111. Figure 1F , a drain electrode D is formed on the active layer A. So far, the manufacturing of the active element E has been completed, wherein the active element E is, for example, a thin film transistor.

[0083] Next, please refer to Figure 1G , an insulating layer 140 is formed on the upper surface 111 of the glass substrate 110 , wherein the insulating layer 140 covers the active device E and the upper surface 111 of the glass substrate 110 .

[0084] Afterwards, please refer to Figure 1H , forming a patterned circuit layer 152 and a plurality of conductive vias 154 , wherein the patterned circuit layer 152 is disposed on the insulating layer 140 , and the conductive vias 154 are disposed in the insulating layer 140 and electrically connect the patterned circuit layer 152 and the drain D of each active element E.

[0085] Finally, please refer to Fig. 1I, a plurality of light-emitting diodes 160a, 160b, and 160c are bonded to the insulating layer 140 by mass transfer, wherein the light-emitting diode 160a is electrically connected to the patterned circuit layer 152 through the pads 162a and 164a, the light-emitting diode 160b is electrically connected to the patterned circuit layer 152 through the pads 162b and 164b, and the light-emitting diode 160c is electrically connected to the patterned circuit layer 152 through the pads 162c and 164c. Here, the light-emitting diodes 160a, 160b, and 160c are electrically connected to the drain D of the active device E through the pads 162a, 162b, and 162c and the conductive via 154, respectively. In other words, the light-emitting diodes 160a, 160b, and 160c are electrically connected to the active device E through the patterned circuit layer 152 and the conductive via 154, respectively. In addition, the pads 164a, 164b, 164c of the LEDs 160a, 160b, 160c are also electrically connected to pads (not shown due to different cross-sections) formed on the lower surface 113 of the glass substrate 110 to output signals. Preferably, the LEDs 160a, 160b, 160c are, for example, red micro LEDs, green micro LEDs, and blue micro LEDs, respectively, but not limited thereto. At this point, the LED package structure 100a has been completed.

[0086] In terms of structure, please refer to Fig. 1I , the light emitting diode package structure 100a includes a glass substrate 110, a conductive via 120, an active device E, an insulating layer 140, light emitting diodes 160a, 160b, 160c, and pads 132, 134. The glass substrate 110 has an upper surface 111 and a lower surface 113 opposite to each other. The conductive via 120 penetrates the glass substrate 110 and connects the upper surface 111 and the lower surface 113. The active device E is disposed on the upper surface 111 of the glass substrate 110 and is electrically connected to the conductive via 120. The insulating layer 140 is disposed on the upper surface 111 of the glass substrate 110 and covers the active device E. The light emitting diodes 160a, 160b, 160c are disposed on the insulating layer 140 and are electrically connected to the active device E respectively. The pads 132, 134 are disposed on the lower surface 113 of the glass substrate 110 and are electrically connected to the conductive via 120. The source S in the active device E is directly electrically connected to the corresponding pad 132 through the corresponding conductive via 120 .

[0087] More specifically, each active element E includes a gate G, a source S, a gate insulating layer I, an active layer A, and a drain D. The gate G is disposed on the upper surface 111 of the glass substrate 110. The source S is disposed on the upper surface 111 of the glass substrate 110, wherein the gate G and the source S belong to the same film layer. The gate insulating layer I is disposed on the upper surface 111 of the glass substrate 110 and covers the gate G. The active layer A is disposed on the upper surface 111 of the glass substrate 110 and covers the gate insulating layer I and a portion of the source S. The drain D is disposed on the active layer A, wherein the light-emitting diodes 160a, 160b, and 160c are electrically connected to the drain D in the active element E, respectively. It should be noted that the way in which the active element E is electrically connected to the light-emitting diodes 160a, 160b, and 160c depends on the polarity of the active element E. Here, the active element A is embodied as a P-type thin film transistor, which is electrically connected to the light-emitting diodes 160a, 160b, and 160c through the drain electrode D. In another embodiment not shown, the active element may also be an N-type thin film transistor, which may be electrically connected to the light-emitting diode through the source electrode, which still belongs to the scope of protection of the present invention. The pads 132 and 134 are electrically connected to the source electrode S and the gate electrode G of each active element E through the conductive via 120.

[0088] In addition, the LED package structure 100a of the present embodiment further includes a patterned circuit layer 152 and a conductive via 154. The patterned circuit layer 152 is disposed on the insulating layer 140. The conductive via 154 is disposed in the insulating layer 140 and electrically connects the patterned circuit layer 152 and the drain D of each active element E. The LEDs 160a, 160b, and 160c are electrically connected to the active element E through the patterned circuit layer 152 and the conductive via 154, respectively.

[0089] In short, in this embodiment, an active element E (i.e., a driving circuit) is fabricated on a glass substrate 110 having a conductive through hole 120, and then light-emitting diodes 160a, 160b, 160c are bonded to the active element E, so that each active element E can control a light-emitting diode 160a, 160b, 160c of a single color, wherein a source electrode S in the active element E is directly electrically connected to a corresponding pad 132 through a corresponding conductive through hole 120. Since the light-emitting diode package structure 100a of this embodiment has pads 132, 134 on the lower surface 113 of the glass substrate 110, it is suitable for being directly soldered to other external circuits or electronic components through the pads 132, 134 located below the glass substrate 110 in subsequent applications.

[0090] It must be noted that the following embodiments use the same component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the previous embodiments, and the following embodiments will not be repeated.

[0091] Figure 2A and Figure 2B is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram according to another embodiment of the present invention. Fig. 1I and Figure 2A The light-emitting diode package structure 100b1 of the present embodiment is similar to the light-emitting diode package structure 100a described above, and the difference between the two is that: in the present embodiment, the light-emitting diode package structure 100b1 also includes a reconfiguration circuit layer 170a, which is disposed on the lower surface 113 of the glass substrate 110, and includes at least one reconfiguration circuit (schematically showing a layer of reconfiguration circuit 172), a plurality of conductive holes 174, and pads 178a1, 178a2, and 178a3. The conductive hole 174 connects the reconfiguration circuit 172 and the pad 178a1. The gate G of each active element E is electrically connected to the pad 178a1 of the reconfiguration circuit layer 170a through the conductive through-hole 120 and the conductive hole 174. Please refer to Figure 2B Here, pad 178a1 is, for example, a scan line / data line pad, pad 178a2 is, for example, a ground line pad (ie, a common source), and pad 178a3 is, for example, a power line pad (ie, a common drain).

[0092] In short, this embodiment forms a reconfiguration circuit layer 170a on the lower surface 113 of the glass substrate 110 to connect the gate G, source S and drain D of the active element E, which can be used for a control system in which a common cathode and a common anode coexist. Furthermore, this design can input signals to the gate G of the active element E connected to the light-emitting diodes 160a, 160b, and 160c respectively by connecting an external control element to achieve the purpose of regulating the current supplied to the light-emitting diodes 160a, 160b, and 160c, so that the light-emitting diodes 160a, 160b, and 160c have functions such as light and dark switching, thereby achieving the function of display.

[0093] Figure 2C and Figure 2D is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram according to another embodiment of the present invention. Fig. 1I and Figure 2CThe light-emitting diode package structure 100b2 of the present embodiment is similar to the light-emitting diode package structure 100a described above, and the difference between the two is that: in the present embodiment, the light-emitting diode package structure 100b2 also includes a reconfiguration circuit layer 170b, which is disposed on the lower surface 113 of the glass substrate 110, and includes at least one reconfiguration circuit (schematically showing a layer of reconfiguration circuit 172), a plurality of conductive holes 174, 176, and pads 178b1, 178b3, 178b5, 178b6, and 178b7. The conductive hole 174 connects the reconfiguration circuit 172 and the conductive through hole 120, and the conductive hole 176 connects the reconfiguration circuit 172 and the pad 178b1. The gate G of each active element E is electrically connected to the pad 178b1 of the reconfiguration circuit layer 170b through the conductive through hole 120 and the conductive hole 174. Please refer to Figure 2D Here, pad 178b1 is, for example, a scan line / data line pad (ie, a common gate), and pad 178b3 is, for example, a power line pad (ie, a common drain), and pads 178b5, 178b6, and 178b7 are input terminals of light-emitting diodes 160a, 160b, and 160c, respectively.

[0094] In short, the present embodiment forms a reconfiguration circuit layer 170b on the lower surface 113 of the glass substrate 110 to connect the gate G, source S and drain D of the active element E. This design is a common cathode control system, and the anode part is divided into three-terminal signal inputs (i.e., pads 178b5, 178b6, and 178b7). Through different external voltage supplies, the light and dark switches of the light-emitting diodes 160a, 160b, and 160c can be controlled respectively, thereby achieving the display function.

[0095] Figure 2E and Figure 2F is a cross-sectional schematic diagram of a light emitting diode packaging structure and a circuit schematic diagram according to another embodiment of the present invention. Fig. 1I and Figure 2F The light-emitting diode package structure 100b3 of the present embodiment is similar to the light-emitting diode package structure 100a described above, and the difference between the two is that: in the present embodiment, the light-emitting diode package structure 100b3 also includes a reconfiguration circuit layer 170c, which is disposed on the lower surface 113 of the glass substrate 110, and includes at least one reconfiguration circuit (schematically showing a layer of reconfiguration circuit 172), a plurality of conductive holes 174, 176, and pads 178c1, 178c2, 178c5, 178c6, and 178c7. The conductive hole 174 connects the reconfiguration circuit 172 and the conductive through hole 120, and the conductive hole 176 connects the reconfiguration circuit 172 and the pad 178c1. The gate G of each active element E is electrically connected to the pad 178c1 of the reconfiguration circuit layer 170c through the conductive through hole 120 and the conductive hole 174. Please refer to Figure 2F Here, pad 178c1 is, for example, a scan line / data line pad (ie, a common gate), and pad 178c2 is, for example, a ground line pad (ie, a common source), and pads 178c5, 178c6, and 178c7 are output ends of light-emitting diodes 160a, 160b, and 160c, respectively.

[0096] In short, the present embodiment forms a reconfiguration circuit layer 170c on the lower surface 113 of the glass substrate 110 to connect the gate G, source S and drain D of the active element E. This design is a common anode control system, where an external voltage is applied to the anode, and the cathode part is divided into three-terminal signal outputs (i.e., pads 178c5, 178c6, and 178c7). A resistor is connected in series at the rear end of the cathode, and the voltage is controlled by switching the resistor, so that the light-emitting diodes 160a, 160b, and 160c have functions such as light and dark switches, thereby achieving the display function.

[0097] Figure 2G is a cross-sectional schematic diagram of a light emitting diode packaging structure according to another embodiment of the present invention. Fig. 1I and Figure 2G The light-emitting diode package structure 100c of the present embodiment is similar to the light-emitting diode package structure 100a described above, and the difference between the two is that in the present embodiment, the active element includes a first active element E1 and a second active element E2. The first active element E1 includes a first gate G1, a first source S1, a first active layer A1, a first gate insulating layer I1 and a first drain D1. The first gate G1, the first source S1, the first active layer A1 and the first gate insulating layer I1 are disposed on the upper surface 111 of the glass substrate 110. The first gate G1 and the first source S1 belong to the same film layer. The first gate insulating layer I1 covers the first gate G1, and the first active layer A1 covers the first gate insulating layer I1 and a portion of the first source S1, and the first drain D1 is disposed on the first active layer A1.

[0098] Furthermore, the second active element E2 includes a second gate G2, a source S2, a second active layer A2, a second gate insulating layer I2 and a second drain D3. The second gate G3, the source S2, the second active layer A2, the second gate insulating layer I2 and the second drain D2 are disposed on the upper surface 111 of the glass substrate 110. The second gate G2, the source S2 and the second drain D2 belong to the same film layer. The second gate insulating layer I2 covers the second gate G2, and the second active layer A2 covers the second gate insulating layer I2, a portion of the source S2 and a portion of the second drain D2. The conductive via 120 is electrically connected to the first gate G1 of the first active element E1 and the second gate G2, the source S2 and the second drain D2 of the second active element E2.

[0099] Next, please refer to Figure 1G and Figure 2G After forming the insulating layer 140 and before providing the light-emitting diodes 160a, 160b, and 160c, a first reconfiguration circuit layer 180 is formed on the insulating layer 140. The first reconfiguration circuit layer 180 includes reconfiguration circuits 182 and 184 and conductive vias 186 and 188, wherein the conductive via 186 electrically connects the reconfiguration circuit 182 and the first reconfiguration circuit 184, and the conductive via 188 electrically connects the reconfiguration circuit 182 and the first drain D1 of the first active element E1. In other words, the light-emitting diodes 160a, 160b, and 160c are electrically connected to the first drain D1 of the first active element E1 through the first reconfiguration circuit layer 180. That is, the light-emitting diodes 160a, 160b, and 160c are electrically connected to at least one of the active elements E.

[0100] In addition, the light-emitting diode package structure 100c of the present invention further includes forming a second reconfiguration circuit layer 190 on the lower surface 113 of the glass substrate 110. The second reconfiguration circuit layer 190 includes at least one reconfiguration circuit 192, a plurality of conductive vias 194, 196, and pads 198a, 198b, 198c. The conductive via 194 connects the reconfiguration circuit 192 with the conductive through-hole 120, and the conductive via 196 connects the reconfiguration circuit 192 with the pads 198a, 198b. The second gate G2 and the source S2 of the second active element E2 are electrically connected to the pads 198a, 198b of the second reconfiguration circuit layer 190 through the conductive through-hole 120. That is, in the present embodiment, the source S2 in at least one active element (i.e., the second active element E2) is directly electrically connected to the corresponding pad 198a through the corresponding conductive through-hole 120. Here, the pad 198 a is, for example, a scan line / data line pad, the pad 198 b is, for example, a ground line pad, and the pad 198 c is, for example, a power line pad.

[0101] In addition, the LED package structure 100c of the present embodiment further includes a passive component 195 embedded in the second reconfiguration circuit layer 190, wherein the passive component 195 is, for example, a capacitor, but not limited thereto. The conductive via 120 connected to the first gate G1 of the first active component E1 and the second drain D2 of the second active component E2 are electrically connected to the passive component 195.

[0102] In short, in this embodiment, two active components (i.e., the first active component E1 and the second active component E2) and one passive component 195 are used as a driving circuit on the glass substrate 110 to simultaneously control three light-emitting diodes 160a, 160b, and 160c, i.e., the color of one pixel. Of course, in other embodiments not shown, the number of active components and the number of passive components can be adjusted according to the needs, such as five active components with two passive components, which still belongs to the scope of protection of the present invention.

[0103] FIG. 3A to FIG. 3D is a cross-sectional schematic diagram of a method for manufacturing a display device according to an embodiment of the present invention, wherein Fig. 1I for Figure 3A First, please refer to Fig. 1I and Figure 3A After the LED package structure 100a is fabricated, the LEDs 160a, 160b, and 160c are bonded to the glass substrate 110. Figure 3B , the individualized LED package structure 100a is formed into a plurality of independent LED package units U. Here, the number of LEDs 160a, 160b, and 160c in each LED package unit U is three, wherein the LEDs 160a, 160b, and 160c are red LEDs, green LEDs, and blue LEDs, respectively. Next, the individualized small-size LED package units U are sent for inspection to pass the yield verification. Afterwards, please refer to Figure 3C and Figure 3D , providing a carrier board P, and assembling the LED package units U that have passed the yield verification onto the carrier board P to form a display device 200, wherein each LED package unit U is connected to the pads 132 and 134 (see Fig. 1I ) is directly electrically connected to the carrier board P. Here, the carrier board P is, for example, a large-sized logic circuit board, but is not limited thereto. So far, the display device 200 has been manufactured.

[0104] In short, the present embodiment first singulates the LED package structure 100a to form a small-sized LED package unit U with pads 132 and 134. Afterwards, a certain number of LED package units U that have passed the yield verification are directly electrically connected to the carrier P through the pads 132 and 134 according to the required size, thereby completing the production of the display device 200. Compared with the prior art, in which a large-sized thin-film transistor substrate and a large number of micro-LEDs transferred thereon are spliced ​​to a circuit board, the present embodiment uses the singulated small-sized LED package units U to splice to the carrier P, so there will be no problem of substrate warping and the splicing yield can be improved. In addition, if there is damage and needs to be repaired, the damaged LED package unit U can be directly replaced with a good LED package unit U, which is relatively simple and can reduce production costs.

[0105] In summary, in the light-emitting diode packaging structure and its manufacturing method of the present invention, the conductive through hole penetrates the glass substrate and electrically connects the active element located on the upper surface and the pad located on the lower surface, wherein the source electrode in at least one active element is directly electrically connected to the corresponding pad through the corresponding conductive through hole, and the light-emitting diode is electrically connected to the active element. Thus, by subsequently singulating the above-mentioned light-emitting diode packaging structure, independent light-emitting diode packaging units with pads can be formed, and this light-emitting diode packaging unit can be directly electrically connected to the carrier through the pad to complete the production of the display device. Compared with the prior art, in which a large-sized thin-film transistor substrate and a large number of micro-light-emitting diodes transferred thereon are spliced ​​to a circuit board, the present invention uses small-sized light-emitting diode packaging units after singulation to be spliced ​​to the carrier, so there will be no problem of substrate warping. In addition, if there is damage and needs to be repaired, the damaged light-emitting diode packaging unit can be directly replaced with a good light-emitting diode packaging unit, which is relatively simple and can reduce production costs.

[0106] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode packaging structure, characterized in that: include: A glass substrate having an upper surface and a lower surface opposite to each other; A plurality of conductive through holes, penetrating the glass substrate and connecting the upper surface and the lower surface; A plurality of active components are disposed on the upper surface of the glass substrate and are electrically connected to the plurality of conductive through holes; An insulating layer, disposed on the upper surface of the glass substrate and covering the plurality of active components; a plurality of light emitting diodes, disposed on the insulating layer and electrically connected to at least one active element among the plurality of active elements; as well as A plurality of pads are disposed on the lower surface of the glass substrate and electrically connected to the plurality of conductive vias, wherein a source of at least one active element among the plurality of active elements is directly electrically connected to at least one of the corresponding pads through the corresponding conductive via.

2. The light emitting diode packaging structure according to claim 1, characterized in that: Each of the plurality of active components comprises: A gate electrode is disposed on the upper surface of the glass substrate; The source electrode is disposed on the upper surface of the glass substrate, wherein the gate electrode and the source electrode belong to the same film layer; A gate insulating layer, disposed on the upper surface of the glass substrate and covering the gate; an active layer, disposed on the upper surface of the glass substrate and covering the gate insulating layer and a portion of the source electrode; and The drain is disposed on the active layer, wherein the plurality of light emitting diodes are electrically connected to the drain in each of the plurality of active elements respectively.

3. The light emitting diode packaging structure according to claim 2, characterized in that: The plurality of pads are electrically connected to the source and the gate of each of the plurality of active components through the plurality of conductive vias.

4. The light emitting diode packaging structure according to claim 2, characterized in that: Also includes: A reconfiguration circuit layer is configured on the lower surface of the glass substrate and includes at least one reconfiguration circuit, a plurality of conductive holes and the plurality of pads, wherein the plurality of conductive holes connect the at least one reconfiguration circuit with the plurality of conductive through holes and connect the at least one reconfiguration circuit with the plurality of pads, wherein the gate of each of the plurality of active components is electrically connected to the plurality of pads of the reconfiguration circuit layer through the plurality of conductive through holes.

5. The light emitting diode packaging structure according to claim 2, characterized in that: Also includes: A patterned circuit layer is disposed on the insulating layer; as well as A plurality of conductive holes are disposed in the insulating layer and electrically connect the patterned circuit layer and the drain of each of the plurality of active components, wherein the plurality of light emitting diodes are electrically connected to the plurality of active components respectively through the patterned circuit layer and the plurality of conductive holes.

6. The light emitting diode packaging structure according to claim 1, characterized in that: The plurality of active elements include a first active element and a second active element, The first active element includes a first gate, a first source, a first active layer, a first gate insulating layer and a first drain, wherein the first gate, the first source, the first active layer and the first gate insulating layer are disposed on the upper surface of the glass substrate, the first gate and the first source belong to the same film layer, the first gate insulating layer covers the first gate, the first active layer covers the first gate insulating layer and a portion of the first source, and the first drain is disposed on the first active layer; The second active element includes a second gate, the source, a second active layer, a second gate insulating layer and a second drain, wherein the second gate, the source, the second active layer, the second gate insulating layer and the second drain are disposed on the upper surface of the glass substrate, the second gate, the source and the second drain belong to the same film layer, the second gate insulating layer covers the second gate, and the second active layer covers the second gate insulating layer, a portion of the source and a portion of the second drain; The plurality of conductive vias are electrically connected to the first gate of the first active device and the second gate, the source, and the second drain of the second active device.

7. The light emitting diode packaging structure according to claim 6, characterized in that: Also includes: The first reconfiguration circuit layer is configured on the insulating layer, wherein the plurality of light emitting diodes are electrically connected to the first drain of the first active device through the first reconfiguration circuit layer.

8. The light emitting diode packaging structure according to claim 7, characterized in that: Also includes: A second reconfiguration circuit layer is configured on the lower surface of the glass substrate and includes at least one reconfiguration circuit, a plurality of conductive holes and the plurality of pads, wherein the plurality of conductive holes connect the at least one reconfiguration circuit with the plurality of conductive through holes and connect the at least one reconfiguration circuit with the plurality of pads, wherein the second gate and the source of the second active element are electrically connected to the plurality of pads of the second reconfiguration circuit layer through the plurality of conductive through holes.

9. The light emitting diode packaging structure according to claim 8, characterized in that: Also includes: A passive component is embedded in the second reconfiguration circuit layer, wherein the plurality of conductive vias connected to the first gate of the first active component and the second drain of the second active component are electrically connected to the passive component.

10. A method for manufacturing a light emitting diode packaging structure, characterized in that: include: Providing a glass substrate, wherein the glass substrate has an upper surface and a lower surface opposite to each other; forming a plurality of conductive through holes penetrating the glass substrate, wherein the plurality of conductive through holes connect the upper surface and the lower surface; forming a plurality of active elements on the upper surface of the glass substrate, wherein the plurality of active elements are electrically connected to the plurality of conductive vias; forming an insulating layer on the upper surface of the glass substrate, wherein the insulating layer covers the plurality of active components; Bonding a plurality of light emitting diodes on the insulating layer, wherein the plurality of light emitting diodes are electrically connected to at least one active element among the plurality of active elements; as well as A plurality of pads are formed on the lower surface of the glass substrate and electrically connected to the plurality of conductive vias, wherein a source of at least one active element among the plurality of active elements is directly electrically connected to at least one of the corresponding pads through the corresponding conductive via.

11. The method for manufacturing a light emitting diode packaging structure according to claim 10, characterized in that: The step of forming each of the plurality of active components on the upper surface of the glass substrate comprises: forming a gate electrode and the source electrode on the upper surface of the glass substrate, wherein the gate electrode and the source electrode belong to the same film layer; forming a gate insulating layer on the upper surface of the glass substrate, wherein the gate insulating layer covers the gate electrode; forming an active layer on the upper surface of the glass substrate, wherein the active layer covers the gate insulating layer and a portion of the source electrode; and A drain is formed on the active layer, wherein the plurality of light emitting diodes are electrically connected to the drain in each of the plurality of active elements.

12. The method for manufacturing a light emitting diode packaging structure according to claim 11, characterized in that: When forming the gate and the source, the plurality of pads are simultaneously formed on the lower surface of the glass substrate, and the plurality of pads are electrically connected to the source and the gate of each of the plurality of active components through the plurality of conductive vias.

13. The method for manufacturing a light emitting diode packaging structure according to claim 11, characterized in that: Also includes: A reconfiguration circuit layer is formed on the lower surface of the glass substrate, the reconfiguration circuit layer includes at least one reconfiguration circuit, a plurality of conductive holes and the plurality of pads, the plurality of conductive holes connect the at least one reconfiguration circuit with the plurality of conductive vias and connect the at least one reconfiguration circuit with the plurality of pads, wherein the gate of each of the plurality of active elements is electrically connected to the plurality of pads of the reconfiguration circuit layer through the plurality of conductive vias.

14. The method for manufacturing a light emitting diode packaging structure according to claim 11, characterized in that: After forming the insulating layer and before providing the plurality of light emitting diodes, the method further includes: A patterned circuit layer and a plurality of conductive holes are formed, wherein the patterned circuit layer is disposed on the insulating layer, and the plurality of conductive holes are disposed in the insulating layer and electrically connect the patterned circuit layer with the drain of each of the plurality of active components, wherein the plurality of light-emitting diodes are electrically connected to the plurality of active components respectively through the patterned circuit layer and the plurality of conductive holes.

15. The method for manufacturing a light emitting diode package structure according to claim 10, characterized in that: The plurality of active elements include a first active element and a second active element, The first active element includes a first gate, a first source, a first active layer, a first gate insulating layer and a first drain, wherein the first gate, the first source, the first active layer and the first gate insulating layer are disposed on the upper surface of the glass substrate, the first gate and the first source belong to the same film layer, the first gate insulating layer covers the first gate, the first active layer covers the first gate insulating layer and a portion of the first source, and the first drain is disposed on the first active layer; The second active element includes a second gate, the source, a second active layer, a second gate insulating layer and a second drain, wherein the second gate, the source, the second active layer, the second gate insulating layer and the second drain are disposed on the upper surface of the glass substrate, the second gate, the source and the second drain belong to the same film layer, the second gate insulating layer covers the second gate, and the second active layer covers the second gate insulating layer, a portion of the source and a portion of the second drain; The plurality of conductive vias are electrically connected to the first gate of the first active device and the second gate, the source, and the second drain of the second active device.

16. The method for manufacturing a light emitting diode package structure according to claim 15, characterized in that: Also includes: After forming the insulating layer and before providing the plurality of light emitting diodes, a first reconfiguration circuit layer is formed on the insulating layer, wherein the plurality of light emitting diodes are electrically connected to the first drain of the first active device through the first reconfiguration circuit layer.

17. The method for manufacturing a light emitting diode package structure according to claim 16, characterized in that: Also includes: A second reconfiguration circuit layer is formed on the lower surface of the glass substrate, the second reconfiguration circuit layer includes at least one reconfiguration circuit, a plurality of conductive holes and the plurality of pads, the plurality of conductive holes connect the at least one reconfiguration circuit with the plurality of conductive vias and connect the at least one reconfiguration circuit with the plurality of pads, wherein the second gate and the source of the second active element are electrically connected to the plurality of pads of the second reconfiguration circuit layer through the plurality of conductive vias.

18. The method for manufacturing a light emitting diode package structure according to claim 17, characterized in that: Also includes: A passive component is embedded in the second reconfiguration circuit layer, wherein the plurality of conductive vias connected to the first gate of the first active component and the second drain of the second active component are electrically connected to the passive component.

19. A method for manufacturing a display device, characterized in that: include: Provide carrier board; as well as A light emitting diode packaging structure is provided, the light emitting diode packaging structure comprising: A glass substrate having an upper surface and a lower surface opposite to each other; A plurality of conductive through holes, penetrating the glass substrate and connecting the upper surface and the lower surface; A plurality of active components are disposed on the upper surface of the glass substrate and are electrically connected to the plurality of conductive through holes; An insulating layer, disposed on the upper surface of the glass substrate and covering the plurality of active components; a plurality of light emitting diodes disposed on the insulating layer and electrically connected to at least one active element among the plurality of active elements; and a plurality of pads disposed on the lower surface of the glass substrate and electrically connected to the plurality of conductive vias, wherein a source of at least one active element among the plurality of active elements is directly electrically connected to at least one of the corresponding pads through the corresponding conductive via; Singulating the light emitting diode package structure to form a plurality of independent light emitting diode package units; and The plurality of light emitting diode package units are assembled onto the carrier to form a display device, wherein each of the plurality of light emitting diode package units is directly electrically connected to the carrier through the plurality of pads.

20. The method for manufacturing a display device according to claim 19, characterized in that: The number of the plurality of light-emitting diodes in each of the plurality of light-emitting diode package units is three, and the plurality of light-emitting diodes are respectively a red micro light-emitting diode, a green micro light-emitting diode, and a blue micro light-emitting diode.

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