Showerheads for ALD precursor delivery
By using nozzles with interlaced helical channels and independent gas distribution holes in the deposition chamber, the deposition inhomogeneity problem caused by difficulty in cleaning of the gas distribution device is solved, and more uniform gas distribution and higher quality substrate surface material deposition is achieved.
Patent Information
- Application Number
- CN202080093407.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-12-19
- Filing Date
- 2020-12-17
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2040-12-17
AI Technical Summary
The gas distribution device in the deposition chamber is difficult to clean, resulting in deposition inhomogeneity and affecting the deposition effect of substrate surface material.
A nozzle for use in a processing chamber is designed, including interlaced helical channels and independent gas distribution holes, providing an isolated flow path through this structure, reducing reaction and deposition inhomogeneity.
Through the design of the nozzle, more uniform and independent gas distribution is achieved, deposition inhomogeneity is reduced, and the uniformity and quality of substrate surface material deposition are improved.
Smart Images

Figure CN114981475B_ABST
Abstract
Description
[0001] field
[0002] Various embodiments of the present disclosure generally relate to substrate processing equipment.
[0003] background
[0004] Deposition chambers are typically used to deposit layers of material over features formed on a substrate. Atomic layer deposition (ALD) and chemical vapor deposition (CVD) are deposition techniques for depositing layers of material. An example of an ALD process includes sequential introduction of pulses of gas through a gas distribution device (e.g., a showerhead). For example, a cycle for sequential introduction of pulses of gas may contain a pulse of a first reactant gas, followed by a pulse of a purge gas and / or a pump evacuation, followed by a pulse of a second reactant gas, and followed by a pulse of a purge gas and / or a pump evacuation. The sequential introduction of separate pulses of the first reactant and the second reactant may result in alternating self-limiting absorption of a monolayer of the reactant on the surface of the substrate, thereby forming a monolayer of material for each cycle. The cycle may be repeated until the desired thickness of the deposited material is achieved. Pulses of purge gas and / or pump evacuations between pulses of the first reactant gas and pulses of the second reactant gas are used to reduce the possibility of gas phase reactions of the reactants due to excess reactants remaining in the chamber. However, the inventors have observed that the gas distribution apparatus is difficult to clean or purge, and that during some deposition processes, the directing of pulses of gas through the gas distribution apparatus results in deposition non-uniformities across the substrate.
[0005] Accordingly, the inventors have provided an enhanced gas distribution apparatus for use in a deposition chamber. Summary of the invention
[0006] Provided herein are multiple embodiments of a showerhead for use in a processing chamber. In some embodiments, a showerhead for use in a processing chamber includes a first spiral channel extending from a central area of the showerhead to a peripheral area of the showerhead; a second spiral channel extending from a central area of the showerhead to a peripheral area of the showerhead, wherein the second spiral channel is staggered with the first spiral channel and is fluidically independent of the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a single channel extending at an angle relative to an axis perpendicular to the lower surface of the showerhead; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a single channel extending at an angle relative to an axis perpendicular to the lower surface of the showerhead.
[0007] In some embodiments, a nozzle for use in a processing chamber includes a lower surface of the nozzle having a plurality of first gas distribution holes and a plurality of second gas distribution holes; an upper surface of the nozzle having a groove defining the first surface; a first spiral channel extending in a spiral pattern from a central area of the first surface to a peripheral area of the first surface; a plurality of first channels extending from the first spiral channel to the plurality of first gas distribution holes; a second spiral channel extending in a spiral pattern from a central area of the first surface to a peripheral area of the first surface, wherein the second spiral channel fluid is independent of the first spiral channel; and a plurality of second channels extending from the second spiral channel to the plurality of second gas distribution holes, wherein the plurality of first gas distribution holes and the plurality of second gas distribution holes extend at an angle of about 2 degrees to about 9 degrees relative to an axis perpendicular to the lower surface of the nozzle.
[0008] In some embodiments, a processing chamber includes a chamber body having a processing space; a substrate support member disposed in the processing space and having a substrate supporting surface to support a substrate having an outer edge; a showerhead disposed in the processing space relative to the substrate support member, wherein the showerhead includes: a first spiral channel and a second spiral channel extending from a central area of the showerhead to a peripheral area of the showerhead, wherein the first spiral channel is staggered and fluidically independent from the second spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead; a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein the plurality of first gas distribution holes and the plurality of second gas distribution holes extend at an angle relative to an axis perpendicular to the lower surface of the showerhead; and a first exhaust port coupled to the first spiral channel and a second exhaust port coupled to the second spiral channel, wherein the first exhaust port and the second exhaust port are radially disposed about 0.25 inches to about 1.50 inches outward from the outer edge of the substrate.
[0009] Other and further various embodiments of the present disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The various embodiments of the present disclosure briefly summarized above and discussed in more detail below can be understood by reference to the exemplary embodiments of the present disclosure depicted in the accompanying drawings. However, the accompanying drawings illustrate only several typical embodiments of the present disclosure and therefore should not be considered as limiting the scope, as the present disclosure recognizes other equally effective embodiments.
[0011] Figure 1 According to some embodiments of the present disclosure, a schematic side cross-sectional view of a processing chamber is depicted.
[0012] Figure 2According to some embodiments of the present disclosure, a top isometric view of a showerhead is depicted.
[0013] Figure 3 is a cross-sectional side view of a portion of a showerhead according to some embodiments of the present disclosure.
[0014] Figure 4 According to some embodiments of the present disclosure, a bottom view of a showerhead is depicted.
[0015] Figure 5 According to some embodiments of the present disclosure, a side view of a showerhead is depicted.
[0016] Figure 6 According to some embodiments of the present disclosure, a top view of a portion of a showerhead is depicted.
[0017] To facilitate understanding, the same reference numerals have been used as much as possible to represent the same elements that are common in the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further explanation. DETAILED DESCRIPTION
[0018] Provided herein are multiple embodiments of gas distribution apparatus, such as showerheads. Showerheads provided herein advantageously provide isolated flow paths for multiple process gases to reduce or avoid reactions between process gases within the showerhead. Examples of suitable process chambers for incorporating the techniques described herein include high dielectric constant (i.e., high-k) and metal ALD deposition chambers available from Applied Materials, Inc., Santa Clara, California, although other chambers available from Applied Materials, Inc. or other manufacturers may also benefit. The following process chamber description is provided for context and example purposes and should not be considered a limitation on the scope of the present disclosure.
[0019] Figure 1 According to various embodiments of the present disclosure, a schematic side cross-sectional view of a processing chamber (processing chamber 100) is depicted. The processing chamber 100 includes a chamber body 102 and a lid assembly 104, with the processing chamber 100 having a processing volume 106 defined within the chamber body 102 and below the lid assembly 104. A slit valve 120 in the chamber body 102 provides access for a robot (not shown) to transport and / or withdraw a substrate 112 having an outer edge 122 into and out of the processing chamber 100. The substrate 112 can be a 150 mm, 200 mm, 300 mm, 450 mm, or similar semiconductor wafer, a glass substrate, or the like.
[0020] The substrate support 108 supports a substrate on a substrate receiving surface in the processing chamber 100. The substrate support 108 is secured to a lift motor for raising and lowering the substrate support 108 and the substrate when disposed on the substrate support 108. The substrate support 108 may include a vacuum chuck (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) for securing the substrate to the substrate support 108 during processing.
[0021] The temperature of the substrate support 108 can be adjusted to control the temperature of the substrate. For example, the substrate support 108 can be heated using embedded heating elements, such as resistive heaters, or can be heated using radiant heating, such as heat lamps configured to provide thermal energy to the substrate support 108.
[0022] In some embodiments, an edge ring 116 may be disposed on top of the perimeter edge of the substrate support 108. The edge ring 116 includes a central opening sized to expose the supporting surface of the substrate support 108. The edge ring 116 may further include a skirt, or an annular lip extending downwardly to protect the sides of the substrate support 108.
[0023] In some embodiments, the liner 114 is disposed along an interior wall (e.g., one or more sidewalls) of the chamber body 102 to protect the chamber body 102 from corrosive gases or material deposition during operation. The liner 114 includes a plurality of openings 128 to fluidly couple the processing volume 106 to a pump port 126 to facilitate evacuation of gases from the processing chamber 100 and maintain a predetermined pressure or pressure range within the processing chamber 100 by a vacuum pump coupled to the pump port 126.
[0024] The gas delivery system 118 is coupled to the lid assembly 104 to supply gases, such as process gases and / or purge gases, through the showerhead 110 to the processing volume 106. The showerhead 110 is disposed in the lid assembly 104, generally relative to the substrate support 108 and includes a plurality of gas distribution holes 160 to provide process gases to the processing volume 106. The showerhead 110 includes a plurality of staggered spiral channels that are fluidly independent of each other to supply the plurality of process gases to the processing volume 106 without mixing in the showerhead 110. The plurality of staggered spiral channels are fluidly coupled to respective holes of the plurality of gas distribution holes 160. In some embodiments, the plurality of staggered spiral channels include a first spiral channel 150 and a second spiral channel 158. In some embodiments, the plurality of staggered spiral channels include three or more staggered spiral channels.
[0025] In some embodiments, the gas delivery system 118 includes a backing plate 124 to enclose the first spiral channel 150 and the second spiral channel 158. In some embodiments, the backing plate 124 is disposed in a groove 168 formed on the back surface of the showerhead 110. In some embodiments, the upper surface of the backing plate 124 is substantially coplanar with the upper surface of the showerhead 110.
[0026] In various embodiments having two staggered spiral passages, the gas delivery system 118 includes a first supply line 132 to provide a first process gas from a first gas source 134 to the showerhead 110, and a second supply line 140 to provide a second process gas from a second gas source 144 to the showerhead 110. In some embodiments, the gas delivery system 118 includes a gas manifold 166. In some embodiments, the first supply line 132 extends from the first gas source 134 through the gas manifold 166 and the backing plate 124 to the showerhead 110. In some embodiments, the second supply line 140 extends from the second gas source 144 through the gas manifold 166 and the backing plate 124 to the showerhead 110. The first inlet 162 is coupled to the first spiral passage 150 to provide the first process gas from the first supply line 132 to the processing volume 106. The second inlet 164 is fluidly coupled to the second spiral passage 158 to provide the second process gas from the second gas source 144 to the processing volume 106.
[0027] The showerhead includes a first exhaust port 152 coupled to the first spiral channel 150, and a second exhaust port 154 coupled to the second spiral channel 158. The first exhaust port 152 is coupled to the first exhaust pump 136 through the first exhaust line 142. The first exhaust pump 136 is configured to evacuate the first spiral channel 150. The second exhaust port 154 is coupled to the second exhaust pump 146 through the second exhaust line 148. The second exhaust pump 146 is configured to evacuate the second spiral channel 158. In some embodiments, the first exhaust line 142 and the second exhaust line 148 extend through the gas manifold 166. The inventors have observed non-uniform deposition on the substrate 112 when the first exhaust port 152 and the second exhaust port 154 are disposed above the substrate 112. In some embodiments, the first exhaust port 152 and the second exhaust port 154 are disposed radially outward from the outer edge 122 of the substrate 112 to advantageously reduce non-uniform deposition on the substrate 112 when the showerhead 110 is evacuated. In some embodiments, the first drain port 152 and the second drain port 154 are disposed radially outward from the outer edge of the substrate 112 at about 0.25 inches to about 1.50 inches.
[0028] In some embodiments, the gas delivery system 118 includes a purge gas source 138 to provide a purge gas to the gas supply system 118 via one or more purge gas supply lines 170 (at Figure 1In some embodiments, one or more purge gas supply lines 170 are fluidly coupled to one or more purge gas inlets (shown in FIG. 1 ) of the showerhead 110, respectively. Figure 2 ). The purge gas is configured to flow from the purge gas inlet through the gap between the showerhead 110 and the liner 114 to the processing volume 106. In some embodiments, an isolator 156 is disposed between the showerhead 110 and the liner 114 to reduce or avoid arcing between the showerhead 110 and the liner 114. In some embodiments, the contour of the inner surface of the isolator 156 corresponds to the contour of the outer surface of the showerhead 110. In some embodiments, the purge gas is configured to flow between the showerhead 110 and the isolator 156. In some embodiments, the isolator 156 includes an annular channel 130 at the upper surface of the isolator 156. The annular channel 130 is fluidly coupled to the purge gas inlet of the showerhead 110 and is configured to guide the flow of the purge gas between the isolator 156 and the showerhead 110.
[0029] In the illustrated processing operation, the substrate 112 is delivered to the processing chamber 100 by a robot (not shown) through a slit valve 120. The substrate 112 is placed on the substrate support 108 by the cooperation of the lift pins and the robot. The substrate support 108 raises the substrate 112 to close opposition to the lower surface of the showerhead 110. A first gas flow (e.g., from a first gas source 134) can be injected into the processing volume 106 through the gas delivery system 118 together with a second gas flow (e.g., from a second gas source 144) or sequentially (e.g., pulsed). The first gas source 134 includes a first precursor and the second gas source 144 includes a second precursor. A third gas flow (e.g., from a purge gas source 138) can be injected into the processing volume 106 together with the first gas flow and the second gas flow, or sequentially (e.g., pulsed) before or after each gas flow of the first gas flow and the second gas flow is injected into the processing volume 106. The purge gas source includes any gas suitable for in-situ processing. The gas is then deposited on the surface of the substrate. Excess gases, byproducts, and the like flow through a plurality of openings 128 in the liner 114 to the pump port 126 and are then exhausted from the processing chamber 100 .
[0030] Figure 2According to some embodiments of the present disclosure, a top isometric view of a spray head is depicted. The first spiral channel 150 and the second spiral channel 158 extend from a central area of the spray head 110 to a peripheral area of the spray head 110. In some embodiments, the upper surface 202 of the spray head 110 includes a groove 168. The groove 168 defines a first surface 204 and a second surface 218. In some embodiments, the first surface 204 includes a sealing groove 210 extending annularly around the first spiral channel 150 and the second spiral channel 158. An O-ring may be disposed in the sealing groove 210 to seal the first spiral channel 150 and the second spiral channel 158. In some embodiments, the first surface 204 is substantially parallel to the upper surface 202.
[0031] In some embodiments, the upper surface 202 of the spray head 110 includes a plurality of openings 206 configured to receive mounting screws. In some embodiments, the plurality of openings 206 facilitate coupling the spray head 110 to the backing plate 124. In some embodiments, the plurality of openings 206 are disposed in a feature structure 220 recessed from the upper surface 202. In some embodiments, the feature structure 220 extends radially outward from the second surface 218 of the groove 168. In some embodiments, the feature structure 220 is disposed axially symmetrically around the spray head 110. In some embodiments, the upper surface 202 of the spray head includes a plurality of alignment feature structures 208 to align the spray head 110 with the backing plate 124. In some embodiments, the alignment feature structure 208 is disposed between the feature structures 220.
[0032] In some embodiments, the outer surface 212 of the showerhead 110 includes one or more grooves 214 configured to align the showerhead 110 with the cap assembly 104. In some embodiments, the one or more grooves 214 are three grooves axially symmetrically disposed around the showerhead 110. In some embodiments, the upper surface 202 includes one or more purge gas inlets 216 configured to allow purge gas (e.g., from the purge gas source 138) to pass through the showerhead 110. In some embodiments, the one or more purge gas inlets 216 include two inlets diametrically opposed.
[0033] Figure 3 According to some embodiments of the present disclosure, it is a cross-sectional side view of a portion of a showerhead. The plurality of gas distribution holes 160 include a plurality of first channels 302 and a plurality of second channels 304. The plurality of first channels 302 extend from the first spiral channel 150 to a plurality of first gas distribution holes 306 on a lower surface 314 of the showerhead 110. The plurality of second channels 304 extend from the second spiral channel 158 to a plurality of second gas distribution holes 308 on a lower surface 314 of the showerhead.
[0034] The first spiral channel 150 and the second spiral channel 158 have an overall length corresponding to the distance between the first inlet 162 and the second inlet 164 and the first exhaust port 152 and the second exhaust port 154, respectively. The first gas distribution holes 306 are spaced along the overall length of the first spiral channel 150. The second gas distribution holes 308 are spaced along the overall length of the second spiral channel 158. In some embodiments, the overall length of the first spiral channel 150 and the second spiral channel 158 is about 120 inches to about 168 inches. In some embodiments, the first spiral channel 150 includes about 800 to about 900 first gas distribution holes 306. In some embodiments, the second spiral channel 158 includes about 800 to about 900 second gas distribution holes 308.
[0035] The first spiral channel 150 and the second spiral channel 158 may have a space suitable for the process performed by the process chamber 100. Smaller space allows faster saturation and emptying of the first spiral channel 150 and the second spiral channel 158, and provides a smaller amount of process gas to the process space 106. Smaller space is more suitable for processes with shorter pulse times for thin film deposition. Larger space allows slower saturation and emptying of the first spiral channel 150 and the second spiral channel 158, and provides a larger amount of process gas to the process space 106. In this way, the space of the first spiral channel 150 and the second spiral channel 158 can correspond to the desired film thickness and pulse time.
[0036] In some embodiments, the first spiral channel 150 and the second spiral channel 158 have different spaces. In some embodiments, the first spiral channel 150 and the second spiral channel 158 have similar spaces, including equal spaces. In some embodiments, the width 312 of the first spiral channel 150 is substantially the same as the width 324 of the second spiral channel 158. In some embodiments, the width 324 and the width 312 are about 0.1 inches to about 0.4 inches. In some embodiments, the depth 316 of the first spiral channel 150 and the second spiral channel 158 is about 0.1 inches to about 1.20 inches. In some embodiments, the wall thickness 322 between the first spiral channel 150 and the second spiral channel 158 is about .02 inches to about .08 inches.
[0037] The first plurality of channels 302 and the second plurality of channels 304 are advantageously angled such that the first plurality of gas distribution holes 306 and the second plurality of gas distribution holes 308 converge in an alternating manner along a spiral pattern at the lower surface 314 of the showerhead 110 (e.g., Figure 4In some embodiments, the spiral pattern includes two staggered spiral patterns extending from the central area of the spray head 110 to the peripheral area of the spray head 110 (see Figure 4 By alternating and converging along the spiral pattern, the first gas distribution holes 306 and the second gas distribution holes 308 may advantageously provide the first process gas and the second process gas, respectively, to the substrate 112 in a more uniform manner.
[0038] The plurality of first channels 302 extend at a first angle 310 relative to an axis 320 that is perpendicular to a lower surface 314 of the showerhead 110. The plurality of first channels 302 extend outwardly from the first spiral channel 150 (e.g., outwardly relative to the first spiral channel 150 itself) to the lower surface 314. In some embodiments, the plurality of first channels 302 extend outwardly from a first side 342 of the first spiral channel 150. In some embodiments, the plurality of first channels 302 extend outwardly from a second side 352 of the plurality of first channels 302. In some embodiments, some of the plurality of first channels 302 extend outwardly from the first spiral channel 150 from the first side 342, and other first channels 302 of the plurality of first channels 302 extend outwardly from the first spiral channel 150 from the second side 352. For example, the plurality of first channels 302 may alternate between extending outwardly from the first side 342 and outwardly from the second side 352 (also referred to as the plurality of first channels 302). Figure 6 ).
[0039] The plurality of second channels 304 extend at a second angle 318 relative to an axis 320 that is perpendicular to a lower surface 314 of the showerhead 110. The plurality of second channels 304 extend outwardly from the second spiral channel 158 (e.g., outwardly relative to the second spiral channel 158 itself) to the lower surface 314. In some embodiments, the plurality of second channels 304 extend outwardly from a first side 344 of the second spiral channel 158. In some embodiments, the plurality of second channels 304 extend outwardly from a second side 354 of the second spiral channel 158. In some embodiments, some of the plurality of second channels 304 extend outwardly from the second spiral channel 158 from the first side 344, and other second channels of the plurality of second channels 304 extend outwardly from the second spiral channel 158 from the second side 354. For example, the plurality of second channels 304 may alternate between extending outwardly from the first side 344 and outwardly from the second side 354 (also referred to as the plurality of second channels 304). Figure 6 ).
[0040] In some embodiments, the first angle 310 is about 2 degrees to about 40 degrees. In some embodiments, the second angle 318 is about 2 degrees to about 40 degrees. In some embodiments, the first angle 310 is about 2 degrees to about 9 degrees. In some embodiments, the second angle 318 is about 2 degrees to about 9 degrees. The first angle 310 can be determined based on the width 312 and depth 316 of the first spiral channel 150. The second angle 318 can be determined based on the width 324 and depth 316 of the second spiral channel 158. In some embodiments, the first angle 310 and the second angle 318 are substantially the same. In some embodiments, the first angle 310 and the second angle 318 are within about 5 degrees of each other.
[0041] In some embodiments, the plurality of first channels 302 extend from the first side 342 of the first spiral channel 150 and the plurality of second channels 304 extend from the second side 354 of the second spiral channel 158 (i.e., are angled toward each other) such that the plurality of first gas distribution holes 306 and the plurality of second gas distribution holes 308 converge in an alternating manner along a spiral pattern at a lower surface 314 of the showerhead 110. In some embodiments, the plurality of first channels 302 extend from the second side 354 of the first spiral channel 150 and the plurality of second channels 304 extend from the first side 344 of the second spiral channel 158 such that the plurality of first gas distribution holes 306 and the plurality of second gas distribution holes 308 converge in an alternating manner along a spiral pattern at a lower surface 314 of the showerhead 110. See, e.g. Figure 4 and the corresponding discussion below.
[0042] Figure 6 According to some embodiments of the present disclosure, a partial top view of a spray head is depicted. In some embodiments, as Figure 6 As shown in FIG. 1 , some of the plurality of first channels 302 extend from the first side 342 of the first spiral channel 150, and some of the plurality of second channels 304 extend from the second side 354 of the second spiral channel 158, and other plurality of first channels 302 extend from the second side 352 of the first spiral channel 150, and other plurality of second channels 304 extend from the first side 344 of the second spiral channel 158, so that the plurality of first gas distribution holes 306 and the plurality of second gas distribution holes 308 converge in an alternating manner along a spiral pattern at the lower surface 314 of the showerhead 110.
[0043] In some embodiments, each of the plurality of first channels 302 is a single channel at any given cross-section of the first channel 302 taken along the entire length of the first spiral channel 150. In some embodiments, each of the plurality of second channels 304 is a single channel at any given cross-section taken along the entire length of the second spiral channel 158.
[0044] In some embodiments, each first channel 302 of the plurality of first channels 302 includes an upper portion 326 and a lower portion 328. In some embodiments, each second channel 304 of the plurality of second channels 304 includes an upper portion 330 and a lower portion 332. In some embodiments, the upper portions 326, 330 have a diameter that is smaller than the diameter of the lower portions 328, 332 to choke the flow through the first channels 302 and the second channels 304. In some embodiments, the upper portions 326, 330 have a diameter of about .01 inches to about .02 inches. In some embodiments, the lower portions 328, 332 have a diameter of about .04 inches to about .08 inches. In some embodiments, the upper portions 326, 330 have a length that is shorter than the length of the lower portions 328, 332 for increasing flow conductance. In some embodiments, the upper portions 326, 330 have a length that is similar to (including equal to) the length of the lower portions 328, 332.
[0045] Figure 4 According to some embodiments of the present disclosure, a bottom view of a showerhead is depicted. In some embodiments, the plurality of first gas distribution holes and the plurality of second gas distribution holes are arranged in an alternating pattern to define a spiral pattern. In some embodiments, the plurality of first gas distribution holes and the plurality of second gas distribution holes are arranged in an alternating pattern to define an alternating spiral pattern, including a first spiral pattern and a second spiral pattern alternating with the first spiral pattern.
[0046] The substrate area 410 of the bottom surface of the showerhead 110 corresponds to the size and position of the substrate being processed (e.g., substrate 112). The substrate area 410 has a diameter substantially equal to or greater than a given diameter of the substrate being processed. For example, if the processing chamber is configured to process 300 mm wafers, the substrate area 410 has a diameter substantially equal to or greater than 300 mm.
[0047] Due to the spiral profile, the plurality of first gas distribution holes 306 and the plurality of second gas distribution holes 308 in the peripheral region of the showerhead 110 (e.g., radially outward from the substrate region 410) need not be arranged in an alternating pattern. However, the showerhead 110 is advantageously sized larger than the substrate being processed so that any non-alternating gas distribution holes of the plurality of first gas distribution holes 306 and the plurality of second gas distribution holes 308 are disposed in the peripheral region, radially outward from the substrate region 410, thereby minimizing any deposition non-uniformity due to the gas distribution hole pattern. In some embodiments, the first exhaust port 152 is disposed above the outermost hole 404 of the plurality of first gas distribution holes 306. In some embodiments, the second exhaust port 154 is disposed above the outermost hole 408 of the plurality of second gas distribution holes 308.
[0048] Figure 5 According to some embodiments of the present disclosure, a side view of a showerhead is depicted. In some embodiments, the showerhead includes an upper portion 502 and a lower portion 506. In some embodiments, the upper portion 502 extends radially outward from the lower portion 506. In some embodiments, an outer surface 510 of the lower portion 506 extends radially inward from the upper portion 502 to the lower surface 314. In some embodiments, the lower surface 314 includes a surface coating 508 to provide better corrosion resistance to precursors used in many substrate processing applications (e.g., ALD). In some embodiments, the surface coating 508 can provide better emissivity control to provide processing stability from the beginning of the component life, for example in a thermal ALD process. In some embodiments, the surface coating 508 includes a conductive material, such as antimony-doped tin oxide (ATO).
[0049] The outer diameter of the lower surface 314 is greater than the outer diameter of the processed substrate 112. In some embodiments, the outer diameter of the lower surface 314 is about 13.0 inches to about 16.0 inches. In some embodiments, the height 504 of the showerhead from the upper surface 202 to the lower surface 314 is about 2.0 inches to about 3.0 inches. In some embodiments, the height 512 of the upper portion 502 is about 0.4 inches to about 1.0 inches.
[0050] While the above is directed to various embodiments of the present disclosure, other and further various embodiments of the present disclosure may be derived without departing from the basic scope thereof.
Claims
1. A showerhead for use in a processing chamber, comprising: a first spiral channel extending from a central area of the nozzle to a peripheral area of the nozzle; a second spiral channel extending from the central region of the spray head to the peripheral region of the spray head, wherein the second spiral channel is interlaced with the first spiral channel and is fluidically independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a single channel extending at a first angle relative to an axis perpendicular to the lower surface of the showerhead; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a single channel extending at a second angle relative to the axis perpendicular to the lower surface of the showerhead, The plurality of first gas distribution holes and the plurality of second gas distribution holes converge in an alternating manner along a spiral pattern on the lower surface of the showerhead. 2 . The showerhead of claim 1 , wherein the plurality of first channels and the plurality of second channels extend at an angle of 2 to 9 degrees.
3. The showerhead of claim 1, wherein each of the plurality of first channels and the plurality of second channels comprises an upper portion and a lower portion, wherein the lower portion has a diameter greater than a diameter of the upper portion to choke flow through the plurality of first channels and the plurality of second channels.
4. The showerhead of claim 1, wherein an exterior surface of the showerhead comprises a purge gas inlet configured to flow a purge gas through the showerhead.
5. The spray head of any one of claims 1 to 4, wherein an upper surface of the spray head comprises a plurality of openings configured to receive set screws.
6. The spray head of any one of claims 1 to 4, wherein an outer surface of the spray head includes a groove configured to align the spray head with a cap assembly.
7. The spray head of any one of claims 1 to 4, wherein the upper surface of the spray head includes a recess defining a first surface having a sealing groove.
8. The showerhead of any one of claims 1 to 4, wherein an upper surface of the showerhead comprises a plurality of alignment features.
9. The spray head of any one of claims 1 to 4, wherein the upper surface of the spray head comprises a groove defining a first surface, wherein the first spiral channel and the second spiral channel extend in a spiral pattern from a central region of the first surface to the peripheral region of the first surface.
10. The spray head of claim 9, wherein the first spiral channel and the second spiral channel have a width of 0.1 inches to 0.4 inches.
11. The spray head of claim 9, wherein the first spiral channel and the second spiral channel have a depth of 0.1 inches to 1.20 inches.
12. The showerhead of claim 9, wherein the outer diameter of the lower surface is 13.0 inches to 16.0 inches.
13. The sprayhead of any one of claims 9, wherein an outer surface of the sprayhead extends radially inwardly from the upper surface to the lower surface.
14. A processing chamber comprising: a chamber body having a processing space; a substrate support disposed in the processing space and having a substrate supporting surface to support a substrate having an outer edge; The showerhead of any one of claims 1 to 5, disposed in the processing space relative to the substrate support; and A first drain port is coupled to the first spiral channel and a second drain port is coupled to the second spiral channel, wherein the first drain port and the second drain port are disposed radially outwardly from the outer edge of the base plate by 0.25 inches to 1.50 inches.
15. The processing chamber of claim 14, wherein the first exhaust port is disposed above an outermost hole of the plurality of first gas distribution holes.
16. The processing chamber of claim 14, wherein a first inlet is coupled to the first spiral passage to provide a first processing gas to the processing volume, and a second inlet is fluidly coupled to the second spiral passage to provide a second processing gas to the processing volume.
17. The processing chamber of claim 14, wherein the lower surface of the showerhead comprises a surface coating.
18. The processing chamber of claim 14, further comprising an isolator disposed between the showerhead and the chamber body.
19. The processing chamber of claim 18, wherein the isolator comprises an annular channel on an upper surface of the isolator, the annular channel configured to flow a purge gas therethrough.
Citation Information
Patent Citations
Apparatus and method for providing uniform flow of gas
CN103890912A
Showerhead and chemical vapor deposition apparatus including the same
US20100024727A1