Substrate processing apparatus and spray module for a substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus and a gas injection module of a substrate processing apparatus. The substrate processing apparatus includes a chamber, a lid, a substrate support unit, a gas injection unit, and a measurement unit. The chamber provides a processing space. The lid covers an upper portion of the chamber. The substrate support unit supports at least one substrate and rotates around a rotation axis. The gas injection unit is disposed above in a diameter direction with respect to the rotation axis of the substrate support unit to inject a processing gas. The measurement unit measures a temperature of a substrate supported by the substrate support unit or a temperature of the substrate support unit at a measurement position spaced apart from the diameter direction. The measurement hole is disposed parallel to the diameter direction or is disposed inclined in a direction having a certain angle with respect to the diameter direction.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus for performing processing techniques such as deposition and etching on a substrate. Background Technology

[0002] Generally, to manufacture solar cells, semiconductor components, flat panel displays, etc., thin film layers, thin film circuit patterns, or optical patterns need to be formed on a substrate. This requires processing techniques on the substrate, including, for example, deposition processes that deposit a thin film containing a defined material onto the substrate, photoprocesses that selectively expose a portion of the thin film using a photosensitive material, and etching processes that remove the selectively exposed portions of the thin film to form a pattern. These processing techniques are performed on the substrate using substrate processing equipment.

[0003] A prior art substrate processing apparatus includes a substrate support unit and a gas jetting unit that sprays processing gas onto the substrate support unit. The substrate support unit rotates about a rotation axis. As the substrate support unit rotates about the rotation axis, the substrate supported by the substrate support unit passes through the area below the gas jetting unit. In this process, processing is performed on the substrate using the processing gas sprayed by the gas jetting unit.

[0004] In this processing technology, the temperature of the substrate plays a crucial role. In the prior art, in order to reflect the temperature of the substrate during the processing, the temperature distribution of the substrate is obtained by using a thermocouple (TC) wafer before the processing is carried out.

[0005] According to prior art substrate processing equipment, it is impossible to obtain the temperature distribution of the substrate simultaneously with the processing process. Therefore, the processing process is performed using a predicted temperature distribution of the substrate obtained before the processing process. However, since many variables occur during the processing, a considerable difference inevitably arises between the predicted temperature distribution and the actual temperature distribution of the substrate during processing. Due to this difference, prior art substrate processing equipment suffers from problems such as difficulty in ensuring the uniformity of substrate quality after processing. Summary of the Invention

[0006] [Technical Issues]

[0007] The present invention is intended to solve the above-mentioned problems and to provide a substrate processing apparatus and its spraying module, which can improve the quality uniformity of substrates that have undergone processing.

[0008] [Methods for solving technical problems]

[0009] To achieve the above objectives, the present invention may include the following components.

[0010] The substrate processing apparatus according to the present invention may include a cavity, a cover, a substrate support unit, a gas injection unit, and a measuring unit. The cavity provides a processing space. The cover covers the upper part of the cavity. The substrate support unit supports at least one substrate and rotates about a rotation axis. The gas injection unit is disposed above the rotation axis of the substrate support unit in a diametrical direction to eject a processing gas. The measuring unit measures the temperature of the substrate supported by the substrate support unit or the temperature of the substrate support unit at measuring positions spaced apart from the diametrical direction. The measuring unit is disposed parallel to the diametrical direction or tilted in a direction having a defined angle relative to the diametrical direction.

[0011] The jetting module of the substrate processing apparatus according to the present invention may include jetting holes, a jetting body, and a measuring hole. The jetting holes are used to inject a processing gas into a cavity for processing a substrate. Multiple jetting holes are formed on the jetting body. Measuring holes are formed at positions spaced apart from the multiple jetting holes to pass through the jetting body. Some of the multiple jetting holes may be arranged side-by-side along a diametrical direction relative to a rotation axis of a substrate support unit, which supports a substrate and rotates within the cavity. The measuring holes are spaced apart from the jetting holes arranged side-by-side along the diametrical direction. The measuring holes are arranged parallel to the diametrical direction or inclined in a direction having a defined angle relative to the diametrical direction.

[0012] [Invention Effects]

[0013] According to the present invention, the following effects can be obtained.

[0014] This invention measures the temperature of the substrate or the temperature of the substrate support unit during the processing of the substrate. Therefore, this invention can improve the quality uniformity of the substrate after the processing has been completed.

[0015] This invention maintains the gas injection unit in a position where it is positioned in the diametrical direction, and positions the measuring unit at a measurement location that minimizes interference with the gas injection unit to measure the temperature of the substrate or the substrate support unit. Therefore, this invention allows for the measurement of the substrate temperature or the substrate support unit temperature using a measuring unit positioned at the measurement location, thus enabling the acquisition of the substrate temperature distribution while performing processing. Furthermore, the use of a gas injection unit positioned in the diametrical direction ensures the stability of processing on the substrate.

[0016] Brief description of the attached diagram

[0017] Figure 1 This is a side cross-sectional view of the substrate processing apparatus according to the present invention.

[0018] Figure 2 and Figure 3This is a top view schematic diagram illustrating an embodiment of a gas injection unit in a substrate processing apparatus according to the present invention.

[0019] Figure 4 This is a top view schematic diagram illustrating the process of measuring the temperature of a substrate via a measuring hole in a substrate processing apparatus according to the present invention.

[0020] Figures 5 to 8 This is a top view schematic diagram illustrating an embodiment in which a measurement unit is provided in a substrate processing apparatus according to the present invention.

[0021] Figure 9 and Figure 10 This is a top cross-sectional schematic diagram illustrating an embodiment in which a measuring hole is formed in a gas jet unit in a substrate processing apparatus according to the present invention.

[0022] Figure 11 This is a block diagram of the substrate processing apparatus according to the present invention.

[0023] Figure 12 This is a conceptual diagram illustrating a component in a substrate processing apparatus according to the present invention for a conversion module to convert a non-circular detection image into a circular detection image.

[0024] Figure 13 This is a diagram illustrating an example of a non-circular detection image.

[0025] Figure 14 This is an example diagram illustrating a circular detection image.

[0026] Invention Embodiments

[0027] Embodiments of the substrate processing apparatus according to the present invention will now be described in detail with reference to the accompanying drawings. The spraying module of the substrate processing apparatus according to the present invention may be included in the substrate processing apparatus according to the present invention, and therefore will be described together with the description of embodiments of the substrate processing apparatus according to the present invention. Figure 1 It is through the use of Figures 5 to 8 The measurement lines shown are used as profile lines to depict a side view section.

[0028] Reference Figure 1According to the substrate processing apparatus 1 of the present invention, processing processes are performed on a substrate 100. The substrate 100 may be a glass substrate, a silicon substrate, or a metal substrate, etc. The substrate processing apparatus 1 of the present invention can perform processing processes such as a deposition process to deposit a thin film on the substrate 100 and an etching process to remove a portion of the thin film deposited on the substrate 100. Hereinafter, although embodiments of processing processes performed by the substrate processing apparatus 1 of the present invention will be mainly described, it will be apparent to those skilled in the art that embodiments of other processing processes, such as etching processes, performed by the substrate processing apparatus 1 of the present invention can be deduced from this.

[0029] The substrate processing apparatus 1 according to the present invention may include a substrate support unit 2, a cover 3, a gas injection unit 4 and a measuring unit 5.

[0030] Reference Figure 1 The substrate support unit 2 supports the substrate 100. The substrate support unit 2 is coupled to the interior of a cavity 1a that provides a processing space for the processing steps. The processing space can be disposed between the substrate support unit 2 and the cover member 3. A substrate inlet / outlet (not shown) is coupled to the cavity 1a. The substrate 100 can be loaded into the cavity 1a through the substrate inlet / outlet using a loading device (not shown). When the processing is complete, the substrate 100 can be removed to the outside of the cavity 1a through the substrate inlet / outlet using a removal device (not shown). An exhaust unit 1b for venting gas from the processing space is coupled to the cavity 1a.

[0031] The substrate support unit 2 is rotatable about the rotation axis 2a. As the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 supported by the substrate support unit 2 can pass through the area below the gas injection unit 4 and simultaneously rotate about the rotation axis 2a. In this process, a processing process can be performed on the substrate 100 using the processing gas injected by the gas injection unit 4. The substrate support unit 2 can support at least one substrate 100. When the substrate support unit 2 supports multiple substrates 100, these substrates 100 can be arranged to be spaced apart from each other relative to the rotation axis 2a. A rotation device (not shown) that provides rotational force can be coupled to the substrate support unit 2.

[0032] Reference Figures 1 to 3 The cover 3 covers the upper part of the cavity 1a. The cover 3 can be configured to be spaced apart from the upper side of the substrate support unit 2. Figure 2 and Figure 3 In the diagram, the cover 3 is depicted as a hexagonal structure, but it is not limited to this; it can also be an octagonal structure, a polygonal structure, a circular structure, or an elliptical structure. The cavity 1a can be a shape corresponding to the cover 3.

[0033] Reference Figures 1 to 3The gas injection unit 4 injects processing gas into the substrate support unit 2. The gas injection unit 4 can be coupled to the cover 3. Although not shown, the gas injection unit 4 can be coupled to the cavity 1a so that the gas injection unit 4 is disposed between the cover 3 and the substrate support unit 2.

[0034] The gas injection unit 4 may include a first gas injection module 41 that injects a first gas and a second gas injection module 42 that injects a second gas. The first gas may be a raw material gas, and the second gas may be a reactant gas. The first gas injection module 41 and the second gas injection module 42 may be arranged to be spaced apart from each other relative to the rotation axis 2a. Therefore, when the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 may sequentially pass through the region below the first gas injection module 41 and the region below the second gas injection module 42 while simultaneously rotating about the rotation axis 2a. Therefore, the processing can be performed on the substrate 100 using the first gas and the second gas. The gas injection unit 4 may include a plurality of first gas injection modules 41. The gas injection unit 4 may include a plurality of second gas injection modules 42.

[0035] The gas injection unit 4 may include a purge gas injection module 43 for injecting purge gas. The purge gas injection module 43 can eject purge gas, thus distinguishing between a first region injected with the first gas and a second region injected with the second gas. Therefore, the purge gas injection module 43 can prevent the first gas and the second gas from mixing between the first and second regions. When the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 can pass through the region below the purge gas injection module 43 and simultaneously rotate about the rotation axis 2a. During this process, residual gas remaining on the substrate 100 can be purged by the purge gas. Figure 2 As shown, the purified gas injection module 43 can be dumbbell-shaped, and it is inserted between the first gas injection module 41 and the second gas injection module 42. Figure 3 As shown, the purified gas injection module 43 can be Y-shaped. Although not shown, the purified gas injection module 43 can be various other shapes depending on the number of first gas injection modules 41 and second gas injection modules 42. The gas injection unit 4 can contain multiple purified gas injection modules 43.

[0036] Reference Figures 1 to 8 The gas injection unit 4 can be disposed above the rotation axis 2a of the substrate support unit 2 in a diametrical direction. The diametrical direction can refer to the direction passing through the rotation axis 2a. For example, such as... Figures 5 to 8 As shown, the diameter lines RL passing through the rotation axis 2a can each be set in the diameter direction. Figures 5 to 8Although only four diameter lines RL extending radially relative to the rotation axis 2a are shown, it is not limited to this. All diameter lines RL extending radially relative to the rotation axis 2a can be set in the diameter direction.

[0037] Reference Figures 1 to 8 The measuring unit 5 measures the temperature of the substrate 100 supported by the substrate support unit 2. The measuring unit 5 can measure the temperature of the substrate support unit 2. In this case, the temperature of the substrate support unit 2 includes the temperature of the portion of the substrate support unit 2 not covered by the substrate 100 and the temperature of the substrate 100. Hereinafter, the measurement of the temperature of the substrate support unit 2 should be understood to include the temperature of the portion of the substrate support unit 2 not covered by the substrate 100 and the temperature of the substrate 100. The measuring unit 5 can be positioned at a measuring position. The measuring position is a position spaced apart from the diametrical direction, and refers to a position set parallel to the diametrical direction or set at an angle in a direction having a defined angle. For example, such as... Figures 5 to 7 As shown, the measurement position can be set on a measurement line AL that is spaced apart from and parallel to the diameter line RL. Figure 8 As shown, the measurement position can be set on a measurement line AL that is spaced apart from the diameter line RL and inclined in a direction having a defined angle with respect to the diameter line RL. Therefore, the substrate processing apparatus 1 according to the present invention maintains the gas injection unit 4 in a state where the gas injection unit 4 is set in the diameter direction, and the measurement unit 5 measures the temperature of the substrate 100 at a measurement position that reduces interference with the gas injection unit 4. The substrate support unit 2 is rotatable, and in a process in which the substrate 100 rotates to pass through the region below the gas injection unit 4, the substrate 100 passes through the region below the measurement unit 5. Therefore, the substrate processing apparatus 1 according to the present invention can ensure the stability of the processing process on the substrate 100 by using the gas injection unit 4 set in the diameter direction, and can obtain the temperature distribution of the substrate 100 while performing the processing process by using the measurement unit 5 set in the measurement position to measure the temperature of the substrate 100 or the temperature of the substrate support unit 2. Therefore, the substrate processing apparatus 1 according to the present invention can change the process conditions based on the temperature distribution of the substrate 100 obtained by the measurement unit 5, thereby improving the quality uniformity of the substrate 100 after the processing process has been completed.

[0038] Here, when the measuring unit 5 is configured to be spaced apart from the diameter direction and tilted in a direction having a defined angle relative to the diameter direction, the defined angle can be as follows: Figure 8As shown, ALA refers to the angle of inclination relative to the dividing line SL, which is set to be parallel to and spaced from the diameter line RL. The angle ALA can be greater than 0 degrees and less than 45 degrees. When the angle ALA is greater than 45 degrees, the length can be excessively increased so that the measuring unit 5 can measure the overall temperature of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present invention can be implemented with an angle ALA of less than 45 degrees.

[0039] The measuring unit 5 can be positioned parallel to the diameter direction at a measuring position spaced apart from one of the plurality of diameter lines RL, or it can be tilted in a direction with a defined angle, thus allowing measurement of the temperature of the substrate 100 supported by the substrate support unit 2 or the temperature of the substrate support unit 2. Figure 5 In this configuration, the measuring unit 5 is positioned on a measuring line AL that is spaced apart from and parallel to the obliquely oriented diameter line RL. Figure 6 and Figure 7 In this configuration, the measuring unit 5 is positioned on a measuring line AL that is spaced apart from and parallel to the horizontally positioned diameter line RL. Figure 8 In this embodiment, the measuring unit 5 is disposed on a measuring line AL that is spaced apart from the horizontally disposed diameter line RL and inclined at a defined angle relative to the diameter line RL. However, not limited to these embodiments, the measuring unit 5 may be disposed at various locations to reduce interference with the gas injection unit and to measure the temperature of the substrate 100 or the substrate support unit 2. In this case, the measuring unit 5 may be disposed on a rotation path in which the substrate 100 rotates based on the rotation of the substrate support unit 2.

[0040] The measuring unit 5 may include a measuring mechanism 51 and a measuring hole 52.

[0041] The measuring mechanism 51 measures the temperature of the substrate 100 or the temperature of the substrate support unit 2. The substrate support unit 2 can rotate about the rotation axis 2a so that the substrate 100 passes through the area below the measuring mechanism 51. Therefore, the measuring mechanism 51 can measure the temperature of the substrate 100 passing through the area below the measuring hole 52 or the temperature of the substrate support unit 2 passing through the area below the measuring hole 52 to obtain temperature data. In this case, the measuring mechanism 51 can sequentially obtain temperature data of a portion of the substrate 100 or a portion of the substrate support unit 2, thus obtaining the overall temperature distribution of the substrate 100 or the substrate support unit. Therefore, the measuring mechanism 51 can obtain the temperature distribution of the substrate 100 while performing the processing technology. The measuring mechanism 51 can be a line scanner that measures temperature using infrared ray (IR).

[0042] The measuring mechanism 51 can measure the temperature of the substrate 100 passing through the area below the measuring hole 52 or the temperature of the substrate support unit 2 passing through the area below the measuring hole 52. Therefore, even if the measuring mechanism 51 is located outside the processing space, the measuring mechanism 51 can still measure the temperature of the substrate 100 or the temperature of the substrate support unit 2 located in the processing space via the measuring hole 52. The measuring mechanism 51 can be provided on the measuring hole 52.

[0043] The measuring hole 52 can be positioned at a measuring location spaced apart from the diameter direction. Therefore, the measuring hole 52 can be configured to reduce interference with the gas injection unit 4. Since the measuring mechanism 51 is mounted on the measuring hole 52, the measuring mechanism 51 can also be configured to reduce interference with the gas injection unit 4.

[0044] The measuring hole 52 can be set parallel to the diameter direction at measuring positions spaced apart from the diameter direction, or it can be set inclined in a direction having a defined angle relative to the diameter direction. Therefore, the measuring mechanism 51 can sequentially obtain temperature data of a portion of the substrate 100 or a portion of the substrate support unit 2 passing through the area below the measuring hole 52 via the measuring hole 52, thus obtaining the overall temperature distribution of the substrate 100. In this case, the length of the measuring hole 52 in the direction extending parallel to the diameter direction can be greater than the diameter of the substrate 100. That is, the length of the measuring hole 52 along the measuring line AL can be greater than the diameter of the substrate 100. The length of the measuring hole 52 in the direction of rotation of the substrate 100 about the rotation axis 2a can be less than the diameter of the substrate 100. The measuring hole 52 can be formed as a slit shape that is an integral quadrilateral, or as an elongated hole shape that extends parallel to the diameter direction.

[0045] Reference Figures 1 to 9 Measuring hole 52 may be formed in gas injection unit 4. Measuring hole 52 may be formed in injection module 40 included in gas injection unit 4 (e.g., Figure 9 At least one of the following (shown). The injection module 40 may be at least one of the first gas injection module 41, the second gas injection module 42, and the purified gas injection module 43. The injection module 40 with the measuring hole 52 may correspond to the injection module of the substrate processing apparatus according to the present invention.

[0046] The injection module 40 may include an injection body 40a and a plurality of injection holes 40b.

[0047] The injection body 40a is mounted on the substrate support unit 2. The injection body 40a can be coupled to the cover 3. The injection body 40a can be connected to the processing gas supply unit (not shown).

[0048] The injection holes 40b can be formed in the injection body 40a. The processing gas supplied by the processing gas supply unit can move along the interior of the injection body 40a and then be sprayed onto the substrate support unit 2 through the injection holes 40b. The injection holes 40b can be arranged at positions spaced apart from each other. Therefore, the processing gas can be sprayed onto different portions of the substrate 100 through the injection holes 40b.

[0049] In this case, the measuring hole 52 can be formed to pass through the spray body 40a at a position spaced apart from the spray hole 40b. The measuring hole 52 can be configured to be spaced apart from the spray holes 40b arranged parallel to each other along the diameter direction in the spray holes 40b. The measuring hole 52 can be configured to be parallel to the diameter direction, or configured to be inclined in a direction having a defined angle relative to the diameter direction. Therefore, the measuring hole 52 is configured to reduce interference with the spray hole 40b, and is implemented to enable the measuring mechanism 51 to sequentially obtain temperature data of a portion of the substrate 100 or a portion of the substrate support unit 2, thereby obtaining the overall temperature distribution of the substrate 100. Figure 9 As shown, the jet holes 40b arranged side by side along the diameter direction refer to the jet holes 40b arranged on the diameter line RL.

[0050] The measuring hole 52 can be formed at positions spaced at different distances from one side and the other side of the spray body 40a, respectively, in the direction of rotation of the substrate 100 supported by the substrate support unit 2 about the rotation axis 2a. That is, the measuring hole 52 can be formed close to one side and a portion of the other side of the spray body 40a. Therefore, the measuring hole 52 can be configured to reduce interference with the spray hole 40b. Furthermore, the spray hole 40b can be further positioned between the spray hole 40b and the measuring hole 52, which are located on the diameter line RL.

[0051] Reference Figure 1 and Figure 10The measuring hole 52 can be formed in the purified gas injection module 43. In this case, compared to the first embodiment where the measuring hole 52 is formed in the first gas injection module 41 or the second gas injection module 42, the second embodiment where the measuring hole 52 is formed in the purified gas injection module 43 can further reduce the impact of the measuring hole 52 on the processing process. This is because the gas injected by the first gas injection module 41 or the second gas injection module 42 directly affects the processing process, but the purified gas injected by the purified gas injection module 43 does not directly affect the processing process. For example, when the first gas injection module 41 and the second gas injection module 42 inject raw material gas and reactive gas, the raw material gas and reactive gas directly affect the deposition performed on the substrate 100, but the purified gas injected by the purified gas injection module 43 does not directly affect the deposition process. Therefore, in the substrate processing apparatus 1 according to the present invention, the measuring hole 52 is formed in the purified gas injection module 43, which improves the stability of the processing process and the quality uniformity of the substrate after the processing process is completed.

[0052] The measuring hole 52 may be formed to pass through the purified gas injection body 430 included in the purified gas injection module 43. The measuring mechanism 51 may be provided on the purified gas injection module 43. The measuring mechanism 51 may be provided on the measuring hole 52, and the temperature of the substrate 100 may be measured through the measuring hole 52.

[0053] The measuring hole 52 can be configured to be spaced apart from the purification injection holes 431 arranged side-by-side along the diameter direction among the plurality of purification injection holes 431 included in the purification gas injection module 43, and configured to be parallel to the diameter direction. Although not shown, the measuring hole 52 can be configured to be spaced apart from the purification injection holes 431 arranged side-by-side along the diameter direction among the plurality of purification injection holes 431 included in the purification gas injection module 43, and configured to be inclined in a direction having a defined angle relative to the diameter direction. Therefore, the measuring hole 52 is configured to reduce interference with the purification injection holes 431, and is configured to enable the measuring mechanism 51 to sequentially obtain temperature data of a portion of the substrate 100 or a portion of the substrate support unit 2, so as to obtain the overall temperature distribution of the substrate 100. Figure 10 As shown, the purification jet holes 431 arranged side by side along the diameter direction refer to the purification jet holes 431 arranged on the diameter line RL.

[0054] Although not shown, a measuring hole 52 may be formed in the cover 3. In this case, a measuring mechanism 51 may be provided on the cover 3 at a position corresponding to the measuring hole 52. The measuring hole 52 may be formed to pass through the cover 3. In this case, the measuring hole 52 may be formed in the portion of the cover 3 where the gas injection unit 4 is not provided.

[0055] Although not shown, the substrate processing apparatus 1 according to the present invention may include a transparent window configured to embed a measuring hole 52. The measuring mechanism 51 can measure the temperature of the substrate 100 or the temperature of the substrate support unit 2 via the transparent window and the measuring hole 52. When the processing is carried out in a vacuum state inside the processing space, the transparent window can be configured to embed the measuring hole 52, thereby maintaining the interior of the processing space in a vacuum state.

[0056] Reference Figures 1 to 14 The substrate processing apparatus 1 according to the present invention may include a detector 6.

[0057] The detector 6 detects the temperature distribution of the substrate 100 using temperature data obtained by the measuring mechanism 51. The temperature data obtained by the measuring mechanism 51 may include point temperatures of the substrate 100. The detector 6 can generate a thermal image of the overall temperature distribution of the substrate 100 by using multiple temperature data obtained by the measuring mechanism 51. In the thermal image, the temperature of each point on the substrate 100 can be displayed in colors corresponding to the temperature. The color-based temperatures can be implemented as stored data in the form of a lookup table and can be pre-stored in the detector 6. When the measuring mechanism 51 measures the temperature of the substrate support unit 2 to obtain temperature data, the detector 6 can extract the temperature data of the substrate 100 from the corresponding temperature data, and then detect the temperature distribution of the substrate 100 by using the extracted temperature data.

[0058] The detector 6 may include a generation module 61 and a conversion module 62.

[0059] The generation module 61 generates a non-circular detection image representing the temperature distribution of the substrate 100 using multiple temperature data obtained by the measuring mechanism 51. The non-circular detection image can be implemented as a thermal image representing the point temperature of the substrate 100 in color. The generation module 61 can confirm the point temperature of the substrate 100 from the multiple temperature data obtained by the measuring mechanism 51, and can match the point temperature of the substrate 100 with stored data to generate a non-circular detection image representing the temperature distribution of the substrate 100 in color. The non-circular detection image can be generated as a non-circular shape, for example, such as... Figure 13 The image shown can be generated as an elliptical detection image. The reason a non-circular detection image is generated even though the substrate 100 is circular is that, during the process of rotating the substrate 100 around the rotation axis 2a, the measuring mechanism 51 measures the temperature of the substrate 100 or the temperature of the substrate support unit 2, and obtains temperature data at measurement positions spaced apart from the diameter direction. The multiple temperature data obtained by the measuring mechanism 51 can be provided to the generation module 61 via wired communication, wireless communication, etc.

[0060] The generation module 61 can generate a non-circular detection image representing the temperature distribution corresponding to the rotation of the substrate 100 by using the rotation speed of the substrate support unit 2 used to obtain multiple temperature data and the measurement time of the measuring mechanism 51. Therefore, when multiple temperature data are obtained in a process in which multiple substrates 100 are placed on the substrate support unit 2 and rotated 360 degrees around the rotation axis 2a and rotated multiple times, the generation module 61 can generate a non-circular detection image from multiple temperature data corresponding to the same number of rotations of the same substrate 100.

[0061] The conversion module 62 converts the non-circular detection image into a circular detection image corresponding to the substrate 100. For example, the conversion module 62 can convert the non-circular detection image into a circular detection image corresponding to the substrate 100. Figure 13 The non-circular detection image shown is converted into Figure 14 The circular detection image is shown. Therefore, the operator can confirm the temperature distribution of the substrate 100 by using the temperature distribution displayed in the circular detection image based on temperature differentiation by color. Therefore, the substrate processing apparatus 1 according to the present invention can provide the operator with a circular detection image corresponding to the substrate 100, thereby improving the ease of operation for confirming the temperature distribution of the substrate 100. Although not shown, the conversion module 62 can provide the circular detection image to a display device (not shown). Moreover, non-circular detection images can be provided from the generation module 61 to the conversion module 62 via wired communication, wireless communication, etc.

[0062] In the process of converting a non-circular detection image into a circular detection image by using the conversion module 62, the conversion module 62 may consider the operation of measuring the temperature of the substrate 100 or the substrate support unit 2 by using the measuring mechanism 51 to obtain temperature data in the process of rotating the substrate 100 around the rotation axis 2a, and consider the operation of measuring the temperature of the substrate 100 or the substrate support unit 2 by using the measuring mechanism 51 to obtain temperature data at measurement positions spaced apart from the diameter direction.

[0063] Therefore, the conversion module 62 can calculate the coordinates of a point on the substrate 100 using at least one of the rotation speed of the substrate support unit 2, the shortest separation distance SD, the inner angle IIA, the outer angle OIA, and the middle angle MIA, and then convert the non-circular detection image into a circular detection image based on the calculated coordinates.

[0064] The shortest separation distance SD refers to the shortest distance among the distances between the measuring hole 52 and the diameter direction. For example, the shortest separation distance SD can refer to the distance between the diameter line RL and the measuring hole 52 in a straight line. The diameter line RL can refer to a virtual line extending along the diameter direction.

[0065] The included angle IIA refers to the angle between the inner connecting line IL and the diameter line RL. The inner connecting line IL is a virtual connecting line that connects the inner end 52a of the measuring hole 52 to the rotating shaft 2a. The inner end 52a refers to the portion of the measuring hole 52 facing the rotating shaft 2a. The inner connecting line IL can be a virtual connecting line that connects the midpoint of the inner end 52a to the rotating shaft 2a in a direction parallel to the shortest separation distance SD.

[0066] The included angle OIA refers to the angle between the external connecting line OL and the diameter line RL. The external connecting line OL is a virtual connecting line that connects the outer end 52b of the measuring hole 52 to the rotating shaft 2a. The outer end 52b and the inner end 52a refer to the face-to-face portions of the measuring hole 52. The external connecting line OL can be a virtual connecting line that connects the midpoint of the outer end 52b to the rotating shaft 2a in a direction parallel to the shortest separation distance SD.

[0067] The included angle MIA refers to the angle between the intermediate connecting line ML and the diameter line RL. The intermediate connecting line ML is a virtual connecting line that connects the middle end 52c of the measuring hole 52 to the rotating shaft 2a. The middle end 52c refers to the portion of the measuring hole 52 that is equidistant from both the inner end 52a and the outer end 52b. The intermediate connecting line ML can be a virtual connecting line that connects the midpoint of the middle end 52c to the rotating shaft 2a in a direction parallel to the shortest separation distance SD.

[0068] As described above, the conversion module 62 can calculate the coordinates of points on the substrate 100 using at least one of the rotation speed of the substrate support unit 2, the shortest separation distance SD, the inner angle IIA, the outer angle OIA, and the middle angle MIA. Then, based on the calculated coordinates, the non-circular detection image can be converted into a circular detection image. In this case, the coordinates of the points on the substrate 100 can correspond to absolute coordinates relative to the actual substrate 100. When the coordinates of the points on the substrate 100 are calculated, the conversion module 62 can move the temperature of the points on the substrate 100 based on the absolute coordinates, thus converting the non-circular detection image into a circular detection image.

[0069] Reference Figure 1 and Figure 11 The substrate processing apparatus 1 according to the present invention can be configured to reflect the temperature distribution of the substrate 100 detected by the detector 6 in the process conditions of the processing process. In this case, the substrate processing apparatus 1 according to the present invention may include a temperature controller 7.

[0070] Temperature controller 7 controls the temperature of substrate 100 mounted on substrate support unit 2. Temperature controller 7 can control the temperature of substrate support unit 2, and therefore the temperature of substrate 100 can be controlled via substrate support unit 2. In this case, temperature controller 7 can be installed in substrate support unit 2. Although not shown, temperature controller 7 can be implemented to control the temperature of substrate 100 using electricity. In this case, temperature controller 7 can be an electric heater. Although not shown, temperature controller 7 can be implemented to control the temperature of substrate 100 using a temperature control fluid. In this case, temperature controller 7 can include a pipeline installed in substrate support unit 2, a pump supplying temperature control fluid to the pipeline, and a control unit controlling the temperature of the temperature control fluid supplied by the pump to the pipeline.

[0071] The temperature controller 7 can control the temperature of the substrate 100 supported by the substrate support unit 2 to the default processing temperature by using the temperature distribution of the substrate 100 detected by the detector 6. The default processing temperature can be changed based on the type of processing technology, the type of substrate 100, and the type of film, and can be preset by the operator.

[0072] The gas injection unit 4 can stop injecting gas onto the substrate support unit 2 until the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature by using the temperature distribution of the substrate 100 detected by the detector 6. Once the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature by using the temperature distribution of the substrate 100 detected by the detector 6, the gas injection unit 4 can start injecting gas onto the substrate support unit 2. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality uniformity of the substrate after the processing process has been completed.

[0073] The present invention described above is not limited to the above embodiments and drawings, and those skilled in the art will clearly recognize that various modifications, variations and substitutions are possible without departing from the scope and spirit of the present invention.

Claims

1. A substrate processing apparatus comprising: a chamber providing a processing space; a cover covering an upper portion of the chamber; a substrate support unit supporting at least one substrate and rotating around a rotation axis; a gas injection unit disposed above a diameter direction with respect to the rotation axis of the substrate support unit to inject a processing gas; and a measurement unit measuring a temperature of a substrate supported by the substrate support unit or a temperature of the substrate support unit at a measurement position spaced apart from the diameter direction; wherein the measurement unit is disposed parallel to the diameter direction or is disposed inclined in a direction having a certain angle with respect to the diameter direction, wherein the gas injection unit includes an injection module injecting the processing gas, wherein the measurement unit includes a measurement hole formed in the injection module, wherein the injection module includes a plurality of injection holes injecting the processing gas, wherein the measurement hole is disposed spaced apart from the injection holes, wherein the measurement hole is disposed parallel to the diameter direction or is disposed inclined in a direction having a certain angle with respect to the diameter direction.

2. The substrate processing apparatus according to claim 1, wherein the gas injection unit includes a purge gas injection module for injecting a purge gas, and the measurement unit includes a measurement mechanism disposed above the purge gas injection module and a measurement hole formed in the purge gas injection module.

3. The substrate processing apparatus according to claim 2, wherein the purge gas injection module includes a plurality of purge injection holes for injecting the purge gas, the measurement hole is disposed spaced apart from purge injection holes disposed in parallel along the diameter direction among the purge injection holes, the measurement hole is disposed parallel to the diameter direction or is disposed inclined in a direction having a certain angle with respect to the diameter direction.

4. The substrate processing apparatus according to claim 1, wherein the measurement unit includes: a measurement hole disposed at a measurement position spaced apart from the diameter direction; and a measurement mechanism measuring a temperature of a substrate passing through an area below the measurement hole or measuring a temperature of the substrate support unit disposed below the measurement hole to obtain temperature data; wherein the measurement hole is disposed parallel to the diameter direction or is disposed inclined in a direction having a certain angle with respect to the diameter direction.

5. The substrate processing apparatus according to claim 2 or 4, comprising a detector detecting a temperature distribution of a substrate by using the temperature data obtained by the measurement mechanism, wherein the detector includes a generation module generating a non-circular detection image representing a temperature distribution of a substrate by using the temperature data and a conversion module converting the non-circular detection image into a circular detection image corresponding to the substrate. ​ 6. The substrate processing apparatus according to claim 5, wherein the conversion module calculates coordinates of a point of a substrate to convert the non-circular detection image into the circular detection image based on the calculated coordinates thereafter, the conversion module calculating coordinates of a point of a substrate by using at least one of a rotational speed of the substrate support unit, a shortest separation distance of the measurement hole from the diameter direction, an inner included angle between an inner connecting line and a diameter line, an outer included angle between an outer connecting line and the diameter line, and a middle included angle between a middle connecting line and the diameter line, the inner connecting line being a virtual connecting line connecting an inner end of the measurement hole to the rotational shaft, the diameter line being a virtual line extending in the diameter direction, the outer connecting line being a virtual connecting line connecting an outer end of the measurement hole to the rotational shaft, the middle connecting line being a virtual connecting line connecting a middle end to the rotational shaft, the middle end being a portion separated by the same distance from the inner end of the measurement hole and the outer end of the measurement hole, respectively.

7. The substrate processing apparatus according to claim 4, wherein the gas injection unit includes a plurality of injection modules for injecting the processing gas, and the measurement hole is formed in at least one of the injection modules.

8. The substrate processing apparatus according to claim 4, wherein the measurement hole is formed in the cover member.

9. An injection module of a substrate processing apparatus, the injection module comprising: a plurality of injection holes for injecting a processing gas into a chamber in which a process is performed on a substrate; an injection body in which the injection holes are formed; and a measurement hole formed at a position separated from the injection holes to pass through the injection body; wherein a portion of the injection holes are arranged in parallel with respect to a diameter direction of a rotational shaft of a substrate support unit that supports a substrate and rotates in the chamber; wherein the measurement hole is arranged to be separated from the injection holes arranged in parallel with respect to the diameter direction, and the measurement hole is arranged to be parallel to the diameter direction, or to be inclined in a direction having a certain angle with respect to the diameter direction.

10. The injection module according to claim 9, wherein the measurement hole is formed at a position separated from one side of the injection body and the other side of the injection body with respect to a direction in which a substrate supported by the substrate support unit rotates around the rotational shaft, respectively, the measurement hole being separated by different distances from the one side of the injection body and the other side of the injection body, respectively.

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