A Double-T MIM Capacitor Equivalent Circuit Model and Its Parameter Extraction Method

Abstract

The present invention discloses a dual-T type MIM capacitor equivalent circuit model and a method for extracting its parameters. In the equivalent circuit model, the first end of the effective capacitor is electrically connected to the second end of the series inductor 1, the second end is electrically connected to the first end of the low-frequency parasitic resistor, the second end of the low-frequency parasitic resistor is electrically connected to the first end of the high-frequency parasitic inductor, the second end of the high-frequency parasitic inductor is electrically connected to the first end of the series inductor 2, and the high-frequency parasitic resistor is connected in parallel with the high-frequency parasitic inductor; the first end of the dielectric capacitor 1 is electrically connected to the second end of the series inductor 1, and the second end is electrically connected to the first end of the substrate parasitic capacitor 1, and the substrate parasitic resistor 1 is connected in parallel with the substrate parasitic capacitor 1. The dual-T type equivalent circuit model of the present invention can fit MIM capacitors in a wider frequency range.

Description

Technical Field

[0001] The present invention belongs to the technical field of equivalent circuit modeling, and particularly relates to a dual-T type MIM capacitor equivalent circuit model and a method for extracting its parameters. Background Art

[0002] With the development of communication technologies, various technologies have put forward higher requirements for the communication capacity, integration, etc. of communication systems. The traditional communication frequency bands cannot meet the requirements of higher transmission rates, and the communication frequency bands of various communication technologies have begun to expand towards millimeter waves. MIM capacitors have multiple functions such as DC blocking, impedance matching, and circuit coupling, and play a crucial role in millimeter-wave monolithic integrated circuits.

[0003] However, MIM capacitors no longer exhibit pure capacitive characteristics at high frequencies and have serious parasitic effects. An accurate circuit model plays a key role in the successful design of the circuit. Traditional MIM capacitor modeling usually adopts a "Π" type network model (see Figure 2 , which consists of three parts A, B, and C) or a physical-based model (see Figure 3 ). The "Π" type network model is generally applied to the capacitance modeling below 50 GHz and cannot accurately reflect the operating state of MIM capacitors in a wide frequency band; the physical-based model does not consider the skin effect of the capacitor metal plates at high frequencies, thus limiting the accuracy of the existing model; neither of them can accurately characterize the characteristics of MIM capacitors in the millimeter-wave medium and high frequency bands. Summary of the Invention

[0004] Based on this, the purpose of the present invention is to provide a dual-T type equivalent circuit model and a method for extracting its parameters, which can be applied to a wider frequency range and have high model accuracy to solve the above problems.

[0005] To achieve the above purpose, the present invention provides a dual-T type MIM capacitor equivalent circuit model, including an effective capacitance, a low-frequency parasitic resistance, a high-frequency parasitic inductance, a high-frequency parasitic resistance, a series inductance one, a high-frequency parasitic inductance, a high-frequency parasitic resistance, a series inductance two, a dielectric capacitance one, a substrate parasitic resistance one, a substrate parasitic capacitance one, a dielectric capacitance two, a substrate parasitic resistance two, and a substrate parasitic capacitance two, where

[0006] the effective capacitance is used to characterize the effective capacitance of the MIM capacitor;

[0007] the low-frequency parasitic resistance is used to characterize the ohmic loss of the MIM capacitor metal plates at low frequencies;

[0008] the high-frequency parasitic inductance and the high-frequency parasitic resistance are used to characterize the skin effect of the MIM capacitor metal conductors at high frequencies;

[0009] The first end of the series inductor 1 is electrically connected to the first end of the overall equivalent circuit model, and the second end of the series inductor 1 is electrically connected to the first end of the effective capacitor;

[0010] The second end of the series inductor 2 is electrically connected to the second end of the overall equivalent circuit model;

[0011] The second end of the effective capacitor is electrically connected to the first end of the low-frequency parasitic resistor, and the second end of the low-frequency parasitic resistor is electrically connected to the first end of the high-frequency parasitic inductor;

[0012] For the high-frequency parasitic inductor and the high-frequency parasitic resistor, the second end of the high-frequency parasitic inductor is electrically connected to the first end of the series inductor 2, and the high-frequency parasitic resistor is connected in parallel with the high-frequency parasitic inductor;

[0013] The first end of the dielectric capacitor 1 is electrically connected to the second end of the series inductor 1, the second end of the dielectric capacitor 1 is electrically connected to the first end of the substrate parasitic capacitor 1, the second end of the substrate parasitic capacitor 1 is grounded, and the substrate parasitic resistor 1 is connected in parallel with the substrate parasitic capacitor 1;

[0014] The first end of the dielectric capacitor 2 is electrically connected to the second end of the high-frequency parasitic inductor, the second end of the dielectric capacitor 2 is electrically connected to the first end of the substrate parasitic capacitor 2, the second end of the substrate parasitic capacitor 2 is grounded, and the substrate parasitic resistor 2 is connected in parallel with the substrate parasitic capacitor 2.

[0015] Based on the above object, the present invention also provides a method for extracting parameters of a double-T type MIM capacitor equivalent circuit model, including the following steps:

[0016] S301, establish a MIM capacitor model with a preset size;

[0017] S302, obtain the S parameters of the MIM capacitor through electromagnetic simulation;

[0018] S303, establish a double-T type MIM capacitor equivalent circuit model, and the double-T type MIM capacitor equivalent circuit model is the above equivalent circuit model;

[0019] S304, calculate the parameter values of each component in the equivalent circuit model according to the S parameters of the MIM capacitor and the calculation formula, where the components include an effective capacitor, a low-frequency parasitic resistor, a high-frequency parasitic inductor, a high-frequency parasitic resistor, a series inductor 1, a series inductor 2, a dielectric capacitor 1, a dielectric capacitor 2, a substrate parasitic resistor 1, a substrate parasitic resistor 2, a substrate parasitic capacitor 1, and a substrate parasitic capacitor 2.

[0020] Preferably, in step S304, calculating the parameter values of each component in the equivalent circuit model according to the S parameters of the MIM capacitor and the calculation formula, includes the following steps:

[0021] S401, converting the S parameters of the MIM capacitor into Z parameters;

[0022] S402, dividing the equivalent circuit model of the double-T MIM capacitor into a first module, a second module, a third module, a fourth module, a fifth module, and a sixth module, where the first module is the series inductor one; the second module is the structure composed of the effective capacitor and the low-frequency parasitic resistor; the third module is the structure composed of the dielectric capacitor one, the substrate parasitic resistor one, and the substrate parasitic capacitor one; the fourth module is the structure composed of the high-frequency parasitic inductor and the high-frequency parasitic resistor; the fifth module is the series inductor two; the sixth module is the structure composed of the dielectric capacitor two, the substrate parasitic resistor two, and the substrate parasitic capacitor two;

[0023] S403, dividing the six modules into partI and partII, where partI is composed of the first module, the second module, and the third module, and partII is composed of the fourth module, the fifth module, and the sixth module;

[0024] S404, calculating the Z parameters of partI and the Z parameters of partII according to the Z parameters;

[0025] S405, calculating the parameters of each component according to the Z parameters of partI, the Z parameters of partII, and the calculation formula.

[0026] Preferably, in step S304, calculating the parameter values of each component in the equivalent circuit model according to the S parameters of the MIM capacitor and the calculation formula, specifically means dividing the equivalent circuit model of the double-T MIM capacitor into a first module, a second module, a third module, a fourth module, a fifth module, and a sixth module. The first module, the second module, and the third module form partI, and the fourth module, the fifth module, and the sixth module form partII. Both partI and partII are T-type networks. According to the Z parameter calculation formula of the T-type network, the parameter values of each component in the equivalent circuit model are obtained; converting the S parameters into Z parameters according to the parameter conversion formula, after obtaining the Z parameters, according to

[0027]

[0028] Calculate A1, B1, C1, A2, B2, and C2, where Z represents the Z parameter of the equivalent circuit model, A1 is the Z parameter of the first module, B1 is the Z parameter of the second module, C1 is the Z parameter of the third module, A2 is the Z parameter of the fourth module, B2 is the Z parameter of the fifth module, and C2 is the Z parameter of the sixth module.

[0029] Preferably, the calculation formula includes:

[0030] A1 = jωL s1

[0031]

[0032]

[0033]

[0034]

[0035] C2 = jωL s2

[0036]

[0037] where C eff is the effective capacitance, R s is the low-frequency parasitic resistance, R sk is the high-frequency parasitic resistance, L sk is the high-frequency parasitic inductance, L s1 is the series inductance one, L s2 is the series inductance two, C ox1 is the dielectric capacitance one, C ox2 is the dielectric capacitance two, R si1 is the substrate parasitic resistance one, R si2 is the substrate parasitic resistance two, C si1 is the substrate parasitic capacitance one and, C si2 is the substrate parasitic capacitance two, ε0 is the free space permittivity, ε r is the permittivity of the MIM capacitor dielectric layer, w is the width of the overlapping area of the upper and lower metal plates of the MIM capacitor, l is the length of the overlapping area of the upper and lower metal plates of the MIM capacitor, and d is the distance between the upper and lower metal plates of the MIM capacitor.

[0038] Preferably, after S304, it further includes:

[0039] S501, simulating the equivalent circuit model according to the parameter values of each component and the ADS simulation system;

[0040] S502. Adjust the parameter values of each component according to the fitting result of the equivalent circuit model and the S-parameters of the MIM capacitor obtained by electromagnetic simulation, so that the error between the model fitting result and the electromagnetic simulation result reaches a preset value.

[0041] The beneficial effects of the present invention are as follows: The equivalent circuit model of the MIM capacitor adopts a double-T model, and has a good fitting accuracy in the range of 0.1 - 110 GHz; and it includes high-frequency parasitic inductance and high-frequency parasitic resistance. The high-frequency parasitic inductance and high-frequency parasitic resistance can characterize the skin effect of the metal conductor in the MIM capacitor at high frequencies, making the equivalent circuit model of the MIM capacitor more consistent with the actual circuit model at high frequencies, and improving the model accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to make the objectives, technical solutions and beneficial effects of the present invention clearer, the present invention provides the following drawings for description:

[0043] Figure 1 is a schematic structural diagram of a general MIM capacitor;

[0044] Figure 2 is a schematic structural diagram of the "Π" - type network equivalent circuit model of the MIM capacitor in the prior art;

[0045] Figure 3 is a schematic structural diagram of the physical - based equivalent circuit model of the MIM capacitor in the prior art;

[0046] Figure 4 is a schematic structural diagram of the double - T type MIM capacitor equivalent circuit model of the embodiment of the present invention;

[0047] Figure 5 is a flowchart of the parameter extraction method for the double - T type MIM capacitor equivalent circuit model of the embodiment of the present invention;

[0048] Figure 6 is a result diagram of the electromagnetic simulation S - parameters and the equivalent circuit simulation S - parameters of the double - T type MIM capacitor of the embodiment of the present invention;

[0049] Figure 7 is a result diagram of the electromagnetic simulation Q - value and the equivalent circuit simulation Q - value of the double - T type MIM capacitor of the embodiment of the present invention;

[0050] Figure 8 is a result diagram of the electromagnetic simulation effective capacitance value and the equivalent circuit simulation effective capacitance value of the double - T type MIM capacitor of the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0051] The preferred embodiments of the present invention will be described in detail below with reference to the drawings.

[0052] See Figure 1Schematic diagram of the structure of the MIM capacitor adopted in the embodiment of the present invention. The MIM capacitor includes: a ground metal 101, a substrate 102, a lower electrode plate 103, a dielectric layer 104, and an upper electrode plate 105. The ground metal 101 is made of copper metal, the substrate 102 is made of SiC, the upper electrode plate 103 and the lower electrode plate 105 are made of Ni / Au alloy, and the dielectric layer 104 is made of SiN dielectric.

[0053] See Figure 4 Schematic diagram of the equivalent circuit structure of the double-T MIM capacitor proposed in the embodiment of the present invention, including a series inductor L s1 , one end of the series inductor L s1 is electrically connected to the first end (P1) of the equivalent circuit model, and the second end of the series inductor L s1 is electrically connected to the first end of the effective capacitor C eff ; the effective capacitor C eff , the effective capacitor C eff , a low-frequency parasitic resistor R s , the second end of the effective capacitor C eff is electrically connected to the first end of the low-frequency parasitic resistor R s , and the second end of the low-frequency parasitic resistor R s is electrically connected to the first end of the high-frequency parasitic inductor L sk ; the high-frequency parasitic inductor L sk , a high-frequency parasitic resistor R sk , the second end of the high-frequency parasitic inductor L sk is electrically connected to the first end of the series inductor L s2 , and the high-frequency parasitic resistor R sk is in parallel with the high-frequency parasitic inductor L sk ; the series inductor L s2 , the second end of the series inductor L s1 is electrically connected to the second end (P2) of the equivalent circuit model; a dielectric capacitor C ox1 , a substrate parasitic resistor R si1 , and a substrate parasitic capacitor C si1 , the first end of the dielectric capacitor C ox1 is electrically connected to the second end of the series inductor L s1 , the second end of the dielectric capacitor C ox1 is electrically connected to the first end of the substrate parasitic capacitor C si1 , the second end of the substrate parasitic capacitor C si1 is grounded, and the substrate parasitic resistor R si1 is in parallel with the substrate parasitic capacitor C si1 ; a dielectric capacitor C ox2 , a substrate parasitic resistor R si2 , and a substrate parasitic capacitor C si2 , the first end of the dielectric capacitor C ox2The first end of [component] is electrically connected to the high-frequency parasitic inductor R sk The second end of the dielectric capacitor C2 ox2 The second end of [component] is electrically connected to the substrate parasitic capacitor C2 si2 The first end of the substrate parasitic capacitor C2 si2 The second end of the substrate parasitic capacitor C2 is grounded, and the substrate parasitic resistor R2 si2 is in parallel with the substrate parasitic capacitor C2 si2

[0054] In a specific embodiment, the effective capacitance C eff is used to characterize the effective capacitance of the MIM capacitor, that is, the effective capacitance between the upper plate 105 and the lower plate 103 of the MIM capacitor. The dielectric capacitor C1 ox1 and the dielectric capacitor C2 ox2 can respectively characterize the dielectric capacitance between the upper plate 105 of the MIM capacitor and the substrate 102 and the dielectric capacitance between the lower plate 103 and the substrate 102. The substrate parasitic capacitor C1 si1 , the substrate parasitic capacitor C2 si2 , the substrate parasitic resistor R1 si1 and the substrate parasitic resistor R2 si2 can respectively characterize the distributed capacitance and parasitic resistance between the substrate 102 and the grounding metal 101. The series inductor L1 s1 and the series inductor L2 s2 can characterize the parasitic inductance at the input and output ends of the MIM capacitor. The low-frequency parasitic resistor R s is used to characterize the ohmic loss at low frequencies between the upper plate 105 and the lower plate 103 of the MIM capacitor. The high-frequency parasitic inductor L sk and the high-frequency parasitic resistor R sk are used to characterize the skin effect of the metal conductor between the upper plate 105 and the lower plate 103 of the MIM capacitor at high frequencies, so that the equivalent circuit model of the MIM capacitor is more consistent with the actual circuit model at high frequencies, and the model accuracy is improved.

[0055] Based on the above equivalent circuit model, the embodiments of the present invention provide a method for extracting the corresponding parameters of the model, Figure 5 which is a flowchart of the method for extracting the parameters of the equivalent circuit model provided by the embodiments of the present invention, and includes the following steps:

[0056] S301, establish a MIM capacitor model with a preset size;

[0057] Specifically, according to Figure 1 the MIM capacitor structure shown, in the electromagnetic simulation software, construct the grounding metal 101, the substrate 102, the lower plate 103, the dielectric layer 104, and the upper plate 105. The overlapping area between the lower plate 103 and the upper plate 105 of the MIM capacitor is a square with a side length of 40 microns. ​

[0058] S302, obtain the S-parameters of the MIM capacitor through electromagnetic simulation;

[0059] Specifically, after establishing a MIM capacitor model with preset dimensions in the simulation software, set the corresponding simulation conditions, and obtain the S-parameters of the MIM capacitor through electromagnetic simulation.

[0060] S303, establish an equivalent circuit model of the double-T MIM capacitor (hereinafter, the "equivalent circuit model" refers to the equivalent circuit model of the double-T MIM capacitor). The equivalent circuit model of the double-T MIM capacitor is shown in Figure 4 ;

[0061] S304, calculate the parameter values of each component in the equivalent circuit model of the double-T MIM capacitor according to the S-parameters of the MIM capacitor and the calculation formula. Among them, the components include effective capacitance, low-frequency parasitic resistance, high-frequency parasitic inductance, high-frequency parasitic resistance, series inductance 1, series inductance 2, dielectric capacitance 1, dielectric capacitance 2, substrate parasitic resistance 1, substrate parasitic resistance 2, substrate parasitic capacitance 1, and substrate parasitic capacitance 2.

[0062] Specifically, the parameter values of each component in the equivalent circuit model of the double-T MIM capacitor ultimately determine the S-parameters of the equivalent circuit model. Take the S-parameter values of the MIM capacitor obtained by electromagnetic simulation as the expected values of the equivalent circuit model, and calculate the parameter values of each component in the equivalent circuit model of the MIM capacitor through the calculation formula, so as to complete the extraction of the equivalent circuit parameters of the MIM capacitor.

[0063] The method for extracting the parameters of the equivalent circuit model of a MIM capacitor provided by the present invention is not only applicable to the MIM capacitor size corresponding to this embodiment, but also can change the overlapping size of the upper and lower metal plates of the MIM capacitor (for example, 10 microns - 50 microns). By executing the same parameter acquisition process as above, obtain the relationship between the parameter values of the equivalent circuit models of MIM capacitors with different sizes and the MIM capacitor size, and through a data fitting tool, further obtain the parameter values of the equivalent circuit models of MIM capacitors with various sizes under this simulation condition. The parameter acquisition method adopted in this embodiment is simple and reliable, which greatly facilitates the MMIC circuit design.

[0064] In a specific embodiment, in S304, calculating the parameter values of each component according to the S-parameters of the MIM capacitor and the calculation formula includes the following steps:

[0065] S401, convert the S-parameters of the MIM capacitor into Z-parameters;

[0066] In S402, the equivalent circuit model is divided into a first module, a second module, a third module, a fourth module, a fifth module, and a sixth module. Among them, the first module is series inductor 1; the second module is a structure composed of an effective capacitor and a low-frequency parasitic resistor; the third module is a structure composed of a dielectric capacitor 1, a substrate parasitic resistor 1, and a substrate parasitic capacitor 1; the fourth module is a structure composed of a high-frequency parasitic inductor and a high-frequency parasitic resistor; the fifth module is series inductor 2; the sixth module is a structure composed of a dielectric capacitor 2, a substrate parasitic resistor 2, and a substrate parasitic capacitor 2.

[0067] In S403, the six modules are divided into partI and partII. partI is composed of the first module, the second module, and the third module, and partII is composed of the fourth module, the fifth module, and the sixth module.

[0068] In S404, calculate the Z parameters of partI and the Z parameters of partII according to the Z parameters.

[0069] In S405, calculate the parameters of each component according to the Z parameters of partI, the Z parameters of partII, and the calculation formula.

[0070] Specifically, still referring to Figure 4 , first divide the equivalent circuit model into a first module 201, a second module 202, a third module 203, a fourth module 204, a fifth module 205, and a sixth module 206. The first module 201, the second module 202, and the third module 203 form partI, and the fourth module 204, the fifth module 205, and the sixth module 206 form partII. Both partI and partII are T-shaped networks. According to the Z-parameter calculation formula of the T-shaped network, the parameter values of each component in the equivalent circuit can be obtained; convert the S parameters into Z parameters according to the parameter conversion formula. After obtaining the Z parameters, according to

[0071]

[0072] calculate A1, B1, C1, A2, B2, and C2. Here, Z represents the Z parameters of the equivalent circuit model, A1 is the Z parameters of the first module 201, B1 is the Z parameters of the second module 202, C1 is the Z parameters of the third module 203, A2 is the Z parameters of the fourth module 204, B2 is the Z parameters of the fifth module 205, and C2 is the Z parameters of the sixth module 206. The calculation formula is:

[0073] A1 = jωL s1

[0074]

[0075]

[0076]

[0077]

[0078] C2 = jωL s2

[0079]

[0080] where C eff is the effective capacitance, R s is the low-frequency parasitic resistance, R sk is the high-frequency parasitic resistance, L sk is the high-frequency parasitic inductance, L s1 is the first series inductance, L s2 is the second series inductance, C ox1 is the first dielectric capacitance, C ox2 is the second dielectric capacitance, R si1 is the first substrate parasitic resistance, R si2 is the second substrate parasitic resistance, C si1 is the sum of the first substrate parasitic capacitances, C si2 is the second substrate parasitic capacitance, ε0 is the permittivity of free space, ε r is the permittivity of the dielectric layer of the MIM capacitor, w is the width of the overlapping area of the upper and lower metal plates of the MIM capacitor, l is the length of the overlapping area of the upper and lower metal plates of the MIM capacitor, and d is the distance between the upper and lower metal plates of the MIM capacitor. The parameter values of each component in the equivalent circuit model can be obtained by calculation according to the calculation formula.

[0081] In a specific embodiment, after S304, calculating the parameters of each component in the equivalent circuit model according to the S-parameters of the MIM capacitor and the calculation formula, it further includes:

[0082] S501, simulating the equivalent circuit model according to the parameter values of each component and the ADS simulation system;

[0083] S502, adjusting the parameter values of each component according to the fitting result of the equivalent circuit model and the S-parameters of the MIM capacitor obtained by electromagnetic simulation, so that the error between the model fitting result and the electromagnetic simulation result reaches a preset value.

[0084] Specifically, in this embodiment, an equivalent circuit model is built using the ADS simulation system to obtain the S-parameter simulation results of the model. The S-parameter simulation results of the MIM capacitor simulated using 3D simulation software are used as the expected values. The parameter optimization algorithm (gradient algorithm) built into the ADS simulation system is used to adjust and optimize the parameter values of each component, so that the model error reaches the preset range. The specific error range can be set according to the actual model accuracy requirements.

[0085] Using the method of this embodiment to model and simulate a square MIM capacitor with a side length of 40 microns, and extract the parameter values of each component of the equivalent model. The electromagnetic simulation results of the MIM capacitor and the simulation results of the equivalent circuit model are as Figures 6 - 8 shown, where Figure 6 is the result diagram of the electromagnetic simulation S-parameters and the equivalent circuit simulation S-parameters of the MIM capacitor. Figure 7 is the result diagram of the electromagnetic simulation Q-value and the equivalent circuit simulation Q-value of the MIM capacitor. Figure 8 is the result diagram of the electromagnetic simulation effective capacitance value and the equivalent circuit simulation effective capacitance value of the MIM capacitor. It can be seen from this that the double-T type equivalent circuit model proposed by the present invention has a good fitting accuracy in the range of 0.1 - 110 GHz, and can accurately characterize the electrical performance of the MIM capacitor at high frequencies, providing convenience for the design of millimeter-wave integrated circuits.

[0086] The description of the above embodiments is only used to help understand the method and its core idea of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention. Various modifications to these embodiments are obvious to those skilled in the art, and the general principles defined in this application can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown in this application, but will conform to the widest scope consistent with the principles and novel features disclosed in this application.

Claims

1. A method for extracting parameters of a double-T MIM capacitor equivalent circuit model, characterized in that, Including the following steps: S301, establish a MIM capacitor model with a preset size; S302, obtain the S-parameters of the MIM capacitor through electromagnetic simulation; S303, establish an equivalent circuit model of a double-T MIM capacitor; S304, calculate the parameter values of each component in the equivalent circuit model according to the S-parameters of the MIM capacitor and the calculation formula, where the components include an effective capacitor, a low-frequency parasitic resistance, a high-frequency parasitic inductance, a high-frequency parasitic resistance, a series inductance I, a series inductance II, a dielectric capacitor I, a dielectric capacitor II, a substrate parasitic resistance I, a substrate parasitic resistance II, a substrate parasitic capacitor I, and a substrate parasitic capacitor II; The S304, calculating the parameter values of each component in the equivalent circuit model according to the S-parameters of the MIM capacitor and the calculation formula, includes the following steps: S401, convert the S-parameters of the MIM capacitor into Z-parameters; S402, divide the equivalent circuit model of the double-T MIM capacitor into a first module, a second module, a third module, a fourth module, a fifth module, and a sixth module, where the first module is the series inductance I; the second module is the structure composed of the effective capacitor and the low-frequency parasitic resistance; the third module is the structure composed of the dielectric capacitor I, the substrate parasitic resistance I, and the substrate parasitic capacitor I; the fourth module is the structure composed of the high-frequency parasitic inductance and the high-frequency parasitic resistance; the fifth module is the series inductance II; the sixth module is the structure composed of the dielectric capacitor II, the substrate parasitic resistance II, and the substrate parasitic capacitor II; S403, divide the six modules into partI and partII, where partI is composed of the first module, the second module, and the third module, and partII is composed of the fourth module, the fifth module, and the sixth module; S404, calculate the Z-parameters of partI and the Z-parameters of partII according to the Z-parameters; S405, calculate the parameters of each component according to the Z-parameters of partI, the Z-parameters of partII, and the calculation formula; The S304, calculating the parameter values of each component in the equivalent circuit model according to the S-parameters of the MIM capacitor and the calculation formula, specifically divides the equivalent circuit model of the double-T MIM capacitor into a first module, a second module, a third module, a fourth module, a fifth module, and a sixth module. The first module, the second module, and the third module form partI, and the fourth module, the fifth module, and the sixth module form partII. Both partI and partII are T-type networks. According to the Z-parameter calculation formula of the T-type network, the parameter values of each component in the equivalent circuit model are obtained; convert the S-parameters into Z-parameters according to the parameter conversion formula. After obtaining the Z-parameters, according to Calculate A1, B1, C1, A2, B2, and C2, where Z represents the Z-parameter of the equivalent circuit model, A1 is the Z-parameter of the first module, B1 is the Z-parameter of the second module, C1 is the Z-parameter of the third module, A2 is the Z-parameter of the fourth module, B2 is the Z-parameter of the fifth module, and C2 is the Z-parameter of the sixth module.

2. The parameter extraction method of the double-T MIM capacitor equivalent circuit model according to claim 1, characterized in that The calculation formula includes: A1 = jωL s1 C2 = jωL s2 Among them, C eff is the effective capacitance, R s is the low-frequency parasitic resistance, R sk is the high-frequency parasitic resistance, L sk is the high-frequency parasitic inductance, L s1 is the first series inductance, L s2 is the second series inductance, C ox1 is the first dielectric capacitance, C ox2 is the second dielectric capacitance, R si1 is the first substrate parasitic resistance, R si2 is the second substrate parasitic resistance, C si1 is the sum of the first substrate parasitic capacitances, C si2 is the second substrate parasitic capacitance, ε0 is the permittivity of free space, ε r is the permittivity of the MIM capacitor dielectric layer, w is the width of the overlapping area of the upper and lower metal plates of the MIM capacitor, l is the length of the overlapping area of the upper and lower metal plates of the MIM capacitor, and d is the distance between the upper and lower metal plates of the MIM capacitor.

3. The parameter extraction method for the double-T MIM capacitor equivalent circuit model according to claim 1, wherein After S304, it further includes: S501, perform simulation on the equivalent circuit model according to the parameter values of each component and the ADS simulation system; S502, adjust the parameter values of each component according to the fitting result of the equivalent circuit model and the S-parameters of the MIM capacitor obtained by electromagnetic simulation, so that the error between the model fitting result and the electromagnetic simulation result reaches a preset value.

4. A double-T type MIM capacitor equivalent circuit model, characterized in that, Implementing the method according to any one of claims 1 to 3 includes an effective capacitance, a low-frequency parasitic resistance, a high-frequency parasitic inductance, a high-frequency parasitic resistance, a series inductance one, a high-frequency parasitic inductance, a high-frequency parasitic resistance, a series inductance two, a dielectric capacitance one, a substrate parasitic resistance one, a substrate parasitic capacitance one, a dielectric capacitance two, a substrate parasitic resistance two, and a substrate parasitic capacitance two, where the effective capacitance is used to characterize the effective capacitance of the MIM capacitor; the low-frequency parasitic resistance is used to characterize the ohmic loss of the metal plate of the MIM capacitor at low frequencies; the high-frequency parasitic inductance and the high-frequency parasitic resistance are used to characterize the skin effect of the metal conductor of the MIM capacitor at high frequencies; The first end of the series inductance one is electrically connected to the first end of the overall equivalent circuit model, and the second end of the series inductance one is electrically connected to the first end of the effective capacitance; The second end of the series inductance two is electrically connected to the second end of the overall equivalent circuit model; The second end of the effective capacitance is electrically connected to the first end of the low-frequency parasitic resistance, and the second end of the low-frequency parasitic resistance is electrically connected to the first end of the high-frequency parasitic inductance; For the high-frequency parasitic inductance and the high-frequency parasitic resistance, the second end of the high-frequency parasitic inductance is electrically connected to the first end of the series inductance two, and the high-frequency parasitic resistance is connected in parallel with the high-frequency parasitic inductance; The first end of the dielectric capacitance one is electrically connected to the second end of the series inductance one, the second end of the dielectric capacitance one is electrically connected to the first end of the substrate parasitic capacitance one, the second end of the substrate parasitic capacitance one is grounded, and the substrate parasitic resistance one is connected in parallel with the substrate parasitic capacitance one; The first end of the dielectric capacitance two is electrically connected to the second end of the high-frequency parasitic inductance, the second end of the dielectric capacitance two is electrically connected to the first end of the substrate parasitic capacitance two, the second end of the substrate parasitic capacitance two is grounded, and the substrate parasitic resistance two is connected in parallel with the substrate parasitic capacitance two.

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