Microwave generator, ultraviolet light source, and substrate processing method

Abstract

A microwave generator, an ultraviolet light source, and a substrate processing method. The microwave generator includes a core assembly, a first magnetic element, a second magnetic element, and a heat sink. The core assembly includes a first electrode element and a second electrode element sleeved on the first electrode element. The first magnetic element is sleeved on the first electrode element, and the second magnetic element is sleeved on the first electrode element and separated from the first magnetic element. The second electrode element is located between the first magnetic element and the second magnetic element. The heat sink includes at least one heat dissipation fin, and the heat dissipation fin extends towards the second magnetic element.

Description

Technical Field

[0001] This disclosure relates to a microwave generator, an ultraviolet light source, and a substrate processing method. Background Technology

[0002] As semiconductor technology advances, the demand for higher storage capacity, faster processing systems, higher efficiency, and lower costs continues to increase. To meet these demands, the semiconductor industry continues to scale down the size of semiconductor components. This scaling down increases the complexity of semiconductor manufacturing processes and the need for contamination control in semiconductor manufacturing systems. Summary of the Invention

[0003] According to some embodiments disclosed herein, a microwave generator includes a core component, a first magnetic element, a second magnetic element, and a heat sink. The core component includes a first electrode element and a second electrode element sleeved on the first electrode element. The first magnetic element is sleeved on the first electrode element, and the second magnetic element is sleeved on the first electrode element but separate from it. The second electrode element is located between the first and second magnetic elements. The heat sink includes at least one heat dissipation fin extending toward the second magnetic element.

[0004] According to other embodiments disclosed herein, an ultraviolet light source includes an ultraviolet lamp, a fan, at least one microwave generator, and a reflector. The fan is disposed above the ultraviolet lamp, and the microwave generator is disposed between the ultraviolet lamp and the fan. The microwave generator includes at least one heat dissipation fin extending toward the ultraviolet lamp. The reflector is disposed between the microwave generator and the ultraviolet lamp.

[0005] According to some other embodiments of this disclosure, a substrate processing method includes exposing oxygen to ultraviolet radiation generated by an ultraviolet light source to form ozone in a processing area, then exposing the substrate to ozone to form an oxide layer on the surface of the substrate, providing airflow through a heat sink of the ultraviolet light source for heat exchange, wherein the heat sink includes at least one air channel with one end facing the substrate, and then performing an etching step to remove the oxide layer on the surface of the substrate. Attached Figure Description

[0006] Some embodiments of this disclosure will be well understood when read in conjunction with the accompanying drawings from the following detailed description. It should be noted that, according to standard practice in the industry, the various features are not drawn to scale and are used for illustrative purposes only. In fact, the dimensions of the various features may be increased or decreased arbitrarily for clarity of explanation.

[0007] Figure 1 This is a cross-sectional view of some embodiments of the substrate processing chamber disclosed herein;

[0008] Figure 2 Here are flowcharts of some embodiments of a method for cleaning a semiconductor substrate disclosed herein;

[0009] Figure 3 These are schematic diagrams showing the appearance of some embodiments of the ultraviolet light source used in the substrate processing chamber disclosed herein;

[0010] Figure 4 For along Figure 3 A cross-sectional view of line segment 4-4 in the diagram;

[0011] Figure 5 This is a schematic cross-sectional view of some embodiments of the microwave generator disclosed herein.

[0012] Figures 6 to 10 Perspective views of different embodiments of the heat dissipation fin assembly applied in the microwave generator disclosed herein are shown.

[0013] [Symbol Explanation]

[0014] 100: Substrate processing chamber

[0015] 101: Processing Area

[0016] 102:Substrate

[0017] 110: Chamber base

[0018] 112: Chamber wall

[0019] 114: Chamber cover

[0020] 116: Block

[0021] 120: Vacuum pump

[0022] 122: Throttling valve

[0023] 130: Radio Frequency Source Component

[0024] 132: Radio Frequency Generator

[0025] 134: Radio Frequency Matching Circuit

[0026] 136: Coil

[0027] 140: Gas delivery system

[0028] 150: Substrate support assembly

[0029] 152: Substrate support

[0030] 154: Temperature Controller

[0031] 156: Radio Frequency Generator

[0032] 200: Ultraviolet light source

[0033] 210: Reaction Chamber

[0034] 212,214: Subspace

[0035] 220: Ultraviolet lamp tube

[0036] 230: Reflector

[0037] 240: Base Plate

[0038] 250: Fan

[0039] 260: Heat exchanger

[0040] 270: Outer shell

[0041] 280: Transformer

[0042] 290: Turn on the light bulb

[0043] 300: Microwave Generator

[0044] 310: External support

[0045] 320: Core Components

[0046] 322: Cathode element

[0047] 324: Anode element

[0048] 330: Heatsink fin assembly

[0049] 332: Inner Ring

[0050] 334: Heat dissipation fins

[0051] 340: Radio Frequency Antenna Assembly

[0052] 350: Magnetic components

[0053] 400: Heatsink fin assembly

[0054] 410: Heatsink

[0055] 412: Opening

[0056] 420, 420a, 420b: Heat dissipation fins

[0057] 500: Heatsink fin assembly

[0058] 510: Inner Ring

[0059] 520: Heat dissipation fins

[0060] 522: First end

[0061] 524: Second end

[0062] 5242: First Subsection

[0063] 5244: Second Subsection

[0064] 600: Heatsink fin assembly

[0065] 610: Heat dissipation fins

[0066] 620: Water-cooled pipes

[0067] 700: Heatsink fin assembly

[0068] 710: Heat dissipation fins

[0069] 720: Water-cooled pipes

[0070] h: height

[0071] w: width

[0072] r: radius of curvature

[0073] CH: Airflow Channel

[0074] CH': Secondary airflow channel

[0075] D1: Vertical axis direction

[0076] M: Method

[0077] S10, S12, S14, S16, S18: Steps Detailed Implementation

[0078] The following disclosure provides numerous different embodiments or examples to implement different features of the provided object. Specific examples of components and arrangements are described below to simplify some embodiments of this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following description of forming a first feature above or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features so that the first and second features are not in direct contact. Furthermore, some embodiments of this disclosure may repeat element symbols and / or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0079] Additionally, for ease of description, this document uses spatially relative terms (such as "below," "below," "lower part," "above," "upper part," and the like) to describe the relationship between one element or feature shown in the figures and another element (or features) or feature (or features). Besides the orientations depicted in the figures, spatially relative terms are intended to encompass different orientations of elements in use or operation. Devices / elements may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein can be interpreted similarly.

[0080] In the manufacturing process of integrated circuits, layers of dielectric, semiconductor, and conductive materials are formed on a substrate such as a semiconductor substrate. These layers are then processed to form feature structures such as electrical interconnects, dielectric layers, gates, and electrodes. In subsequent processes, ultraviolet (UV) radiation can be used to treat the layers or feature structures formed on the semiconductor substrate. UV radiation can be used in rapid thermal processes (RTPs) to quickly heat the layers formed on the substrate. UV radiation can also be used to promote the curing or condensation polymerization of polymers or to create stress film layers. UV radiation is also commonly used to activate gases to clean chambers.

[0081] Reference Figure 1 This is a cross-sectional view of some embodiments of the substrate processing chamber disclosed herein. The substrate processing chamber 100 can, for example, be a cleaning chamber. The substrate processing chamber 100 can be a plasma-using processing chamber capable of cleaning a substrate 102 within a processing region 101 inside the chamber. In some embodiments, the substrate processing chamber 100 includes a chamber base 110, a chamber wall 112, and a chamber cover 114 that hermetically surround the processing region 101. The substrate processing chamber 100 also includes components for creating a vacuum in the processing region 101, thereby enabling plasma processing to be performed therein. The processing region 101 can be evacuated to a desired pressure using a vacuum pump 120, which is connected to the processing region 101 through the chamber base 110 and / or the chamber wall 112.

[0082] In some embodiments, the chamber wall 112 and chamber base 110 may be made of a metallic material, such as aluminum or other suitable metal. In some embodiments, the chamber wall 112 and chamber cover 114 are temperature-controlled, for example, by using a heat exchange device to heat and cool the respective chamber components. For example, in some embodiments, the chamber wall 112 and chamber cover 114 may be heated by a heater, such as a lamp assembly, disposed outside the chamber wall 112. In other embodiments, cooling gas may be circulated outside the chamber wall 112 to cool the chamber wall 112 and chamber cover 114. In other embodiments, heating and / or cooling conduits embedded in the chamber wall 112 and chamber cover 114 may be connected to a fluid heater / cooler device to control the temperature of the processing area 101. In some embodiments, the processing area 101 is further surrounded by one or more shields 116, which are used to protect the chamber wall 112 and / or chamber cover 114 from the generated plasma and the processing performed in the chamber.

[0083] The substrate processing chamber 100 also includes a radio frequency (RF) source assembly 130. In some embodiments, the RF source assembly 130 is an inductive RF source, typically comprising an RF generator 132, an RF matching circuit 134, and a coil 136, wherein the RF matching circuit 134 is connected between the coil 136 and the RF generator 132. The coil 136 is disposed adjacent to the chamber cover 114. In some embodiments, the RF generator 132 may provide RF energy pulses to the coil 136 to generate plasma with a lower energy level and / or plasma density. The chamber cover 114 is typically a dielectric material (e.g., quartz or ceramic) to allow plasma formation from the RF generator 132 in the processing region 101.

[0084] In some embodiments, the substrate processing chamber 100 further includes a gas delivery system 140 for delivering one or more processing gases to a processing region 101, wherein the processing region 101 is defined by a chamber base 110, a chamber wall 112, and a chamber cover 114. In some embodiments, the gas delivery system 140 is configured to generate an oxygen gas containing an oxidant (such as oxygen or ozone (O3)). In some embodiments, the gas delivery system 140 is used to deliver reactive gases, such as silicon-containing gases, hydrogen-containing gases, germanium-containing gases, chlorine-containing gases, oxygen-containing gases, fluorine-containing gases, boron-containing gases, and / or phosphorus-containing gases. In some embodiments, the gas delivery system 140 is used to deliver inert gases, such as argon, helium, krypton, and / or nitrogen. In some embodiments, the gas delivery system 140 includes a plurality of gas conduits for respectively delivering the aforementioned oxidant-containing gases, reactive gases, or inert gases.

[0085] The pressure in processing zone 101 can be adjusted by adjusting the flow rate of the gas delivered by gas delivery system 140 and the pumping rate of vacuum pump 120. Vacuum pump 120 is further connected to throttle valve 122 to adjust the pumping rate of vacuum pump 120.

[0086] In some embodiments, operating the vacuum pump 120 can adjust the pressure of the processing area 101 within the substrate processing chamber 100 to a predetermined pressure, such as a vacuum state, to perform substrate processing steps. In other embodiments, operating the vacuum pump 120 can vent the gas within the substrate processing chamber 100, and also remove contaminant particles generated in the previous processing steps from the substrate processing chamber 100, thereby achieving the purpose of purifying the substrate processing chamber 100.

[0087] In some embodiments, the substrate processing chamber 100 further includes a substrate support assembly 150 including a substrate support 152, which may, for example, be an electrostatic chuck for actively supporting the substrate during processing. The substrate support assembly 150 also includes a temperature controller 154 connected to the substrate support 152 for heating and / or cooling the substrate support 152. The temperature controller 154 includes a heat exchange device for heating and / or cooling the substrate support 152 to a predetermined temperature. The heat exchange device may be, for example, an embedded resistance heating element or a fluid cooling channel coupled to a heat exchanger.

[0088] During the process, the substrate support 152 can be selectively connected to another radio frequency generator 156, whereby a radio frequency bias can be further applied to conductive elements disposed in a portion of the substrate support 152 to attract plasma formed in the processing area 101 to the surface of the substrate 102. In some embodiments, the radio frequency generator 156 is adapted to generate a cathode or anode bias on the substrate during one or more portions of the substrate cleaning process to adjust the charge retained on the substrate and / or control the amount of ion and plasma bombardment on the substrate surface.

[0089] In some other embodiments, the substrate support 152 is grounded or DC biased. In still other embodiments, the substrate support 152 and the substrate 102 are electrically floated during plasma processing to minimize ion bombardment damage to the substrate 102.

[0090] Delivering radio frequency energy from the radio frequency generator 132 to the processing region 101 causes ionization of gas atoms in the processing region 101. During the cleaning process, when the substrate 102 is exposed to the plasma generated in the processing region 101, contaminants on the surface of the substrate 102 are ejected or desorbed from the surface due to the energy transmitted by the ionized atoms in the plasma striking the surface of the substrate 102. In some embodiments, due to the bias voltage applied to the substrate 102 through the substrate support 152, ionized gas atoms in the plasma can be adsorbed onto the surface of the substrate 102.

[0091] In some embodiments, the radio frequency power transmitted to the coil 136 via the radio frequency generator 132 is pulsed to form a low-energy plasma, minimizing the damage to the surface of the substrate 102 caused by the plasma potential formed in the substrate processing chamber 100. The need to minimize or eliminate any damage to the surface of the substrate 102 through cleaning processes is critical for single-crystal substrates, which are fabricated for forming epitaxial layers. Minimizing damage to the substrate surface helps reduce the number of defects and stress in the formed epitaxial layer.

[0092] In some embodiments, the substrate processing chamber 100 is further provided with an ultraviolet light source 200 to transfer energy to the surface of the substrate 102 during substrate processing. In some embodiments, the ultraviolet light source 200 is disposed on the chamber cover 114 to transmit ultraviolet light through the opening formed in the chamber cover 114 to irradiate the substrate 102.

[0093] Next, please refer to the following: Figure 1 and Figure 2 ,in Figure 2 This is a flowchart of some embodiments of a method for cleaning a semiconductor substrate disclosed herein, wherein this method M can be performed as follows: Figure 1 The process is performed in the substrate processing chamber 100 shown. Step S10 includes placing the substrate 102 to be cleaned in the substrate processing chamber 100. Since the substrate processing chamber 100 is maintained in a vacuum state, contaminants and particulate matter (e.g., oxygen, carbon, fluorine, silicon, and chlorine) present on the surface of the substrate 102 can be desorbed or removed and removed by a coating formed on the inner surface of the substrate processing chamber 100.

[0094] Next, one or more oxidation processing steps S12 and etching processing steps S14 are performed to clean the substrate 102. The oxidation processing step S12 is used to remove contaminated or damaged silicon from the surface of the substrate 102. The formed oxide layer is then removed by the etching processing step S14 to expose a fresh and clean silicon surface.

[0095] In oxidation step S12, an oxidant is delivered to the substrate processing chamber 100 to generate oxides on the top layer of the substrate 102 to be cleaned. In some embodiments, the oxidant includes ozone (O3), which allows the oxidation of silicon to be carried out at a relatively low temperature. In some embodiments, ozone is generated in the processing area 101 by exposing oxygen to a combination of plasma and ultraviolet radiation. For example, during the process, energy can be delivered to the processing area 101 via an ultraviolet light source 200 disposed on the chamber cover 114, exposing the input oxygen to plasma and ultraviolet radiation, thereby generating ozone as an oxidant in the processing area 101. The ozone then reacts with the top surface of the substrate 102 to generate an oxide layer on the top surface of the substrate 102 to be cleaned.

[0096] Next, an etching process step S14 is performed to remove the oxides formed in the oxidation process step S12. The etching process step S14 can be physical etching, chemical etching, or a combination of physical and chemical etching techniques. Taking chemical etching as an example, an etching gas is introduced into the substrate processing chamber 100, where a plasma is ignited to generate reactive species that chemically react with substances on the substrate 102. Volatile byproducts from the reaction can be further removed. The etching gases used in chemical etching include chlorine, fluorine, or other compounds suitable for removing oxides formed on the substrate surface in the etching process step S14.

[0097] In physical etching, the etching step S14 is performed by generating a plasma to provide an excitation species for bombarding the surface of substrate 102, thereby physically removing the material to be removed from the surface of substrate 102. In some embodiments, a bias voltage is provided to substrate support 152 to accelerate the movement of ions formed in the plasma toward the surface of substrate 102. The bombarding ions physically remove the material on the surface of substrate 102 through a sputtering etching action. Generally, low-energy physical bombardment of the surface of substrate 102 can reduce damage to the silicon lattice of the substrate 102 surface. Low-power bias voltage can be used to remove the oxide layer and minimize damage to the surface of substrate 102.

[0098] Method M then performs a cleaning step S16, which includes cleaning region 101 using a cleaning gas. Cleaning step S16 can be used to remove volatile byproducts resulting from the chemical etching reaction in step S14, for example, by removing the cleaning gas and volatile byproducts via a vacuum pump 120 connected to the substrate processing chamber 100. Cleaning step S16 can also be used to remove particles formed when the oxide layer on the surface of substrate 102 is bombarded during physical etching in step S14.

[0099] Method M then performs a deposition process step S18, for example, forming an epitaxial layer on substrate 102. After undergoing one or more oxidation processes S12 and etching processes S14, substrate 102 can form a clean and undamaged surface, thereby forming a high-quality epitaxial layer in the subsequent deposition process step S18.

[0100] In some other embodiments, ultraviolet radiation is commonly used, in addition to generating ozone, to treat silicon oxide, silicon carbide, or carbon-doped silicon oxide films. For example, in semiconductor device manufacturing, chemical vapor deposition is often used to deposit materials such as silicon oxide (SiOx), silicon carbide (SiC), and silicon-oxygen-carbon (SiOCx) films as dielectric layers. In some processes, water forms during the deposition of silicon-oxygen-carbon films when using organosilane sources that include at least one Si-C bond. This water can be absorbed into the film on the bulk and / or incorporated into the deposited film as Si-OH chemical bonds, both of which are undesirable. Ultraviolet radiation can be used to cure and densify the deposited film, while reducing the overall thermal budget of individual wafers and accelerating the manufacturing process. Generally, increasing the intensity of ultraviolet radiation can correspondingly provide a better or faster process. Microwave-generated ultraviolet plasma sources can effectively generate ultraviolet radiation and have good output power.

[0101] Next, please refer to the following: Figure 3 and Figure 4 ,in Figure 3 These are schematic diagrams showing the appearance of some embodiments of the ultraviolet light source used in the substrate processing chamber disclosed herein. Figure 4 For along Figure 3 The image shows a cross-sectional view of line segment 4-4. The ultraviolet light source 200 includes a microwave generator 300, an ultraviolet lamp 220, a reflector 230, a base plate 240, a fan 250, a heat exchanger 260, and a housing 270. The housing 270 is assembled onto the base plate 240 to define a reaction chamber 210 therein. The microwave generator 300, ultraviolet lamp 220, and reflector 230 are disposed within the reaction chamber 210 defined by the housing 270 and the base plate 240. The fan 250 is connected to the housing 270 to provide cooling gas to the reaction chamber for heat dissipation, while the heat exchanger 260 is connected to the fan 250 to enhance the heat dissipation efficiency of the reaction chamber 210.

[0102] In some embodiments, the ultraviolet light source 200 is used to generate ultraviolet radiation. The ultraviolet lamp tube 220 may be a mercury microwave arc lamp, a pulsed xenon flash lamp, or an array of ultraviolet light-emitting diodes, etc. In some embodiments, the ultraviolet lamp tube 220 comprises a sealed plasma bulb filled with one or more gases (such as xenon (Xe) or mercury (Hg)), wherein the gases are excited by the microwave generator 300 to generate ultraviolet radiation. For illustrative purposes, the ultraviolet lamp tube 220 is illustrated as an elongated cylindrical bulb; however, those skilled in the art will readily understand that ultraviolet lamp tubes with other shapes, such as spherical lamps or arrays of lamps, may also be used. In other embodiments, the ultraviolet lamp tube 220 may comprise two or more spaced-apart elongated bulbs. This disclosure is not limited thereto.

[0103] The base plate 240 connects the ultraviolet lamp tube 220 with the processing area 101 of the substrate processing chamber 100 below (see...). Figure 1 The substrate 240 isolates and separates the ultraviolet light generating area from the processing area 101 below. The substrate 240 also serves to prevent particulate contamination from the substrate 102 during the process, and the separation space allows for the use of cooling gas to cool the ultraviolet lamp 220 and / or the microwave generator 300.

[0104] In some embodiments, the substrate 240 is made of a material with high transmittance to ultraviolet wavelengths, such as transparent quartz. Alternatively, in other embodiments, the substrate 240 may use other materials to generate ultraviolet radiation with different wavelengths, such as wavelengths below 220 nm. The substrate 240 may also be coated with an anti-reflective coating to minimize back reflection of ultraviolet radiation into the reflector 230. For example, the substrate 240 may be coated with magnesium fluoride, silicon, fluorine, and other coatings.

[0105] A reflector 230 is positioned between the ultraviolet lamp 220 and the microwave generator 300 to reflect microwaves generated above the ultraviolet lamp 220. The reflector 230 can be used to reflect microwaves back to the area where the ultraviolet lamp 220 is located. In some embodiments, the reflector 230 includes a micro-perforated screen, the size of which allows microwaves to be deflected by the reflector 230. In some embodiments, the surface of the reflector 230 facing the ultraviolet lamp 220 may be coated with a reflective coating to reflect the ultraviolet radiation generated by the ultraviolet lamp 220 toward the base plate 240.

[0106] In some embodiments, the reaction chamber 210 defined by the housing 270 and the base plate 240 may be further divided into upper and lower subspaces 212 and 214 by the reflector 230. An ultraviolet lamp 220 is disposed in subspace 214 adjacent to the base plate 240, and a microwave generator 300 is disposed in subspace 212 above the reflector 230. Microwaves are primarily generated in subspace 212, while ultraviolet radiation is primarily excited in subspace 214.

[0107] In some embodiments, the reflector 230 surrounding the subspace 214 may be provided with a plurality of heat dissipation holes 236 and a reflective coating on its inner surface to enhance the heat dissipation efficiency and light emission capability of the ultraviolet light source 200. The ultraviolet light source 200 may further include a transformer 280 and a start bulb 290 disposed in the subspace 212. The transformer 280 is connected to the microwave generator 300, and the start bulb 290 is used to induce microwaves to react with the ultraviolet lamp tube 220.

[0108] In some embodiments, each ultraviolet light source 200 is provided with at least two microwave generators 300. The microwaves generated by these two microwave generators 300 have different radio frequencies. For example, one can generate higher frequency microwaves, while the other can generate lower frequency microwaves, to jointly excite the ultraviolet lamp 220.

[0109] Next, please refer to Figure 5 This is a cross-sectional schematic diagram of some embodiments of the microwave generator 300 disclosed herein. The microwave generator 300 includes an outer support 310, a core assembly 320, a heat sink fin assembly 330, a radio frequency antenna assembly 340, and a plurality of magnetic elements 350. The outer support 310 is used to fix the core assembly 320, the heat sink fin assembly 330, the radio frequency antenna assembly 340, and the magnetic elements 350. The core assembly 320 includes a cathode element 322 and an anode element 324 coaxially arranged, with the anode element 324 sleeved on the cathode element 322, and the magnetic elements 350 sleeved on the cathode element 322 and respectively located at both ends of the anode element 324. In some embodiments, there are two magnetic elements 350, which are separated, and the anode element 324 is disposed between the two magnetic elements 350. Each heat sink fin in the heat sink fin assembly 330 extends from one magnetic element 350 toward the other magnetic element 350.

[0110] The heat sink fin assembly 330 is configured around the core component 320, such as around the anode element 324. An RF antenna assembly 340 is connected to one end of the core component 320, and a portion of the RF antenna assembly 340 is exposed outside the outer bracket 310. The RF antenna assembly 340 may include a radome and at least one RF antenna disposed within the radome.

[0111] The core component 320 has a longitudinal axis direction D1, and the radio frequency antenna assembly 340 extends outward of the outer bracket 310 along said longitudinal axis direction D1. In some embodiments, the fan, such as Figure 3The fan 250 shown is positioned along the longitudinal axis D1 on one side of the microwave generator 300 to provide cooling gas to the microwave generator 300, thereby removing the large amount of heat generated when the microwave generator 300 operates due to the core component 320 being connected to high voltage. At least a portion of the heat sink fin assembly 330 is not covered by the outer bracket 310 along the longitudinal axis D1; ​​that is, at least a portion of the heat sink fin assembly 330 is exposed to the outer bracket 310 along the longitudinal axis D1 to receive the cooling gas provided by the fan.

[0112] The heat dissipation fin assembly 330 is arranged parallel to the longitudinal axis D1 of the core component 320. In other words, multiple closed or semi-closed airflow channels can be formed between the heat dissipation fins of the heat dissipation fin assembly 330, and the axial direction of these airflow channels is also parallel to the longitudinal axis D1 of the core component 320. As a result, the cooling gas provided by the fan 250, which is also arranged along the longitudinal axis D1 of the core component 320, will flow parallel to the axial direction of the airflow channels of the heat dissipation fin assembly 330. The entire surface area of ​​the heat dissipation fin assembly 330 can exchange heat with the cooling gas provided by the fan 250, effectively improving the heat dissipation capacity of the microwave generator 300 and avoiding the problem of shortened lifespan of the core component 320 due to oxidation caused by long-term operation in a high-temperature environment.

[0113] Next, please refer to Figures 6 to 10 The figures depict perspective views of different embodiments of the heat dissipation fin assembly applied in the microwave generator disclosed herein. Figure 6 As shown, the heat sink assembly 330 has a petal-shaped design, comprising an inner ring 332 and multiple bent heat sink fins 334 connected to the inner ring 332. The heat sink assembly 330 is fitted onto the core component 320 (see...) via the inner ring 332. Figure 5 On the inner ring 332, heat exchange can be directly achieved through direct contact with the core component 320. These bent heat dissipation fins 334 are U-shaped, with a height h of approximately 22 cm to approximately 30 cm, a width w of approximately 16 cm to approximately 20 cm, and a radius of curvature r at the U-shaped bend of the heat dissipation fin 334 of approximately 3 cm to approximately 5 cm. The number of U-shaped bent heat dissipation fins 334 in each heat dissipation fin assembly 330 is approximately 15 to approximately 25 bundles. The heat dissipation fin assembly 334 is preferably made of a material with high thermal conductivity and ease of stamping, such as a copper or aluminum-containing metal, to quickly dissipate the large amount of heat generated during the operation of the core component 320.

[0114] In the heat sink fin assembly 330, a closed airflow channel CH is defined between each U-shaped bent heat sink fin 334 and the inner ring 332. Here, the closed airflow channel CH refers to the continuous closed shape of the sidewall after the heat sink fin 334 and the inner ring 332 are connected. Cooling gas supplied by the fan can enter through one end of the closed airflow channel CH (as shown at the top), exchange heat with the heat sink fin 334, and then exit through the other end of the closed airflow channel CH (as shown at the bottom). During this heat exchange process, the entire side surface of the heat sink fin 334 can contact the cooling gas, efficiently utilizing the surface area of ​​the heat sink fin 334.

[0115] To go further. Cooperation Figure 1 and Figure 4-6 The heat dissipation fins 334 in the heat dissipation fin assembly 330 extend towards the magnetic element 350, that is, towards the ultraviolet lamp tube 220. The fan 250, the heat dissipation fins 334 of the heat dissipation fin assembly 330, and the ultraviolet lamp tube 220 are generally arranged along the longitudinal direction D1. When the ultraviolet light source 200 is operating, the fan 250 can provide cooling airflow to the heat dissipation fin assembly 330 for heat exchange. At this time, one end of the airflow channel CH in the heat dissipation fin assembly 330 is used to receive the cooling airflow from the fan 250, while the other end of the airflow channel CH faces the substrate 102. The direction of the cooling airflow provided by the fan 250 is generally parallel to the longitudinal axis D1 of the core component 320, and the heat dissipation fins 334 in the heat dissipation fin assembly 330 are also generally parallel to the direction of the cooling airflow provided by the fan 250, thereby improving the heat dissipation efficiency of the heat dissipation fin assembly 330. In other embodiments, such as Figure 7-10 In the embodiments shown, the extension direction of the heat dissipation fins is approximately the same as that of 334, so only the changes in the heat dissipation fins themselves are described.

[0116] In other embodiments, such as Figure 7 As shown, the heat dissipation fin assembly 400 includes a heat-conducting block 410 and a plurality of heat dissipation fins 420, wherein the heat-conducting block 410 has a rectangular shape and an opening 412 in the heat-conducting block 410 for fitting into the core component 320 (see...). Figure 5 In some embodiments, the heat-conducting block 410 can directly contact the core component 320 for heat exchange. The heat sink fin assembly 400 is preferably made of a material with high thermal conductivity and easy stamping, such as a metal containing copper or aluminum, to quickly remove the large amount of heat generated during the operation of the core component 320.

[0117] The heat dissipation fins 420 can be rectangular metal sheets. These heat dissipation fins 420 can be disposed on the four side surfaces of the heat-conducting block 410, and the heat dissipation fins 420 on the four side surfaces are arranged parallel to each other. The height h of the heat dissipation fins 420 is between about 22 cm and about 30 cm, and the width w of the heat dissipation fins 420 is between about 16 cm and about 20 cm. In some embodiments, the widths of these heat dissipation fins 420 can be the same or different. For example, in some embodiments, the width of at least one side of the heat dissipation fin 420a is smaller than the width of the other heat dissipation fins 420b. These heat dissipation fins 420a with smaller widths are mounted on the outer bracket 310 of the microwave generator 300 (see...). Figure 5 Inside, the heat dissipation fins 420b, which have a larger width, extend beyond the outer bracket 310 to receive cooling air from the fan more directly for heat exchange.

[0118] The heat sink fins 420 are configured parallel to the longitudinal axis D1 of the core component 320 to form open airflow channels CH between the heat sink fins 420. These open airflow channels CH are defined by the heat-conducting block 410 and the sidewalls of the heat sink fins 420. Since the extension direction of the airflow channels CH is parallel to the airflow direction of the cooling gas provided by the fan, the entire side surface of the heat sink fins 420 can contact the cooling gas during heat exchange, effectively utilizing the surface area of ​​the heat sink fins 420.

[0119] In some embodiments, the heat dissipation fins 420 are flat, but in other embodiments, the heat dissipation fins 420 can be bent or curved, or have microstructures on their surface to increase the surface area of ​​the heat dissipation fins 420, thereby improving the heat dissipation efficiency of the heat dissipation fins 420.

[0120] Next refer to Figure 8 The heat sink assembly 500 includes an inner ring 510 and multiple heat sink fins 520 radially connected to the inner ring 510. The heat sink assembly 500 is sleeved onto the core component 320 (see inner ring 510) via the inner ring 510. Figure 5 On the upper part, the inner ring 510 can directly contact the core component 320 for heat exchange. The material of the heat sink fin assembly 500 is preferably a material with high thermal conductivity and easy stamping, such as a metal material containing copper or aluminum, so as to quickly remove the large amount of heat generated by the core component 320 during operation.

[0121] In this embodiment, the heat dissipation fin 520 is a dovetail-shaped metal plate, such as a thin metal sheet with a forked tail. For example, each heat dissipation fin 520 has a first end 522 and a second end 524 opposite to each other. The first end 522 of the heat dissipation fin 520 is connected to the inner ring 510, and the second end 524 of the heat dissipation fin 520 is forked. In other words, the second end 524 of the heat dissipation fin 520 has a first sub-part 5242 and a second sub-part 5244, which extend in different directions.

[0122] In some embodiments, the height h of the heat dissipation fin 520 is between about 22 cm and about 30 cm, the width w of the heat dissipation fin 520 is between about 16 cm and about 20 cm, and the angle between the first sub-part 5242 and the second sub-part 5244 is an acute angle.

[0123] In some embodiments, an airflow channel CH is formed between adjacent heat dissipation fins 520, and a secondary airflow channel CH' is also formed between the first sub-part 5242 and the second sub-part 5244 of each heat dissipation fin 520. Since the extension directions of both the airflow channel CH and the secondary airflow channel CH' are parallel to the airflow direction of the cooling gas provided by the fan, the entire side surface of the heat dissipation fin 520 can contact the cooling gas during heat exchange, efficiently utilizing the surface area of ​​the heat dissipation fin 520. The first sub-part 5242 and the second sub-part 5244 of the heat dissipation fin 520 further increase the surface area of ​​the heat dissipation fin 520, thereby improving the heat exchange efficiency of the heat dissipation fin 520.

[0124] Reference Figure 9 The heat sink assembly 600 includes multiple heat sink fins 610 and water cooling pipes 620 for connecting the heat sink fins 610. The heat sink fins 610 are arranged radially, and the water cooling pipes 620 pass through each heat sink fin 610 to connect them in series. The end of the heat sink fin closer to the center can directly contact the core component 320 (see...). Figure 5 Alternatively, it may be adjacent to the core component 320 for heat exchange. The heat sink fins 610 may be metal plates and parallel to the longitudinal axis direction D1 of the core component 320 (see...). Figure 5 This configuration ensures that the airflow channel CH formed between the heat dissipation fins 610 is parallel to the airflow direction of the cooling gas provided by the fan.

[0125] In some embodiments, the water-cooled pipe 620 is a hollow tubular structure containing condensate fluid. The flow of the condensate fluid through the hollow tubular structure aids in heat dissipation. In some embodiments, capillary tubes may be further provided within the hollow tubular structure to further enhance the reflux rate of the condensate fluid within the hollow tubular structure. In some embodiments, the water-cooled pipe 620 is further connected to a fluid connector, which is connected to a pump to introduce external condensate fluid into the hollow tubular structure and to discharge the condensate fluid from within the hollow tubular structure.

[0126] In some embodiments, the water-cooling conduit 620 may be spirally arranged along the longitudinal axis D1 of the core component 320 to provide a flow path for condensate fluid around the periphery of the core component 320 along the longitudinal axis D1 to aid in heat dissipation for the core component 320 and the heat sink 610. In some embodiments, the water-cooling conduit 620 may comprise a hollow copper conduit, and the condensate fluid flowing within the hollow conduit may be water.

[0127] Reference Figure 10 In other embodiments, the heat dissipation fin assembly 700 includes a plurality of heat dissipation fins 710 and water-cooling conduits 720 for connecting the heat dissipation fins 710. The heat dissipation fins 710 are arranged radially, and the water-cooling conduits 720 spirally pass through each heat dissipation fin 710 to connect the heat dissipation fins 710 together in series. Figure 9 The difference between the heat sink assembly 600 and the heat sink assembly 700 is that the heat sink assembly 700 includes multiple heat sink fins 710, and the shape of these heat sink fins 710 is not limited to a flat plate shape; they can have folded or curved surfaces, or the shape of the heat sink fins 710 can be a wavy plate shape. However, these heat sink fins 710 are still parallel to the longitudinal axis D1 of the core component 320 (see...). Figure 5 The configuration ensures that the airflow channel CH formed between the heat dissipation fins 710 is parallel to the airflow direction of the cooling gas provided by the fan.

[0128] The heat dissipation fins in the microwave generator disclosed herein are arranged parallel to the longitudinal axis of the core component. In this way, when the cooling airflow flows from one end of the microwave generator to the other end, the cooling airflow can exchange heat with the side surface of the heat dissipation fins, thereby increasing the heat dissipation efficiency of the microwave generator.

[0129] According to some embodiments disclosed herein, a microwave generator includes a core component, a first magnetic element, a second magnetic element, and a heat sink. The core component includes a first electrode element and a second electrode element sleeved on the first electrode element. The first magnetic element is sleeved on the first electrode element, and the second magnetic element is sleeved on the first electrode element but separate from it. The second electrode element is located between the first and second magnetic elements. The heat sink includes at least one heat sink fin extending toward the second magnetic element. In some embodiments, the heat sink includes an inner ring, and the heat sink fin is a U-shaped heat sink connected to the inner ring. In some embodiments, the heat sink includes an inner ring, and the heat sink fin is a forked heat sink connected to the inner ring. In some embodiments, the heat sink includes a heat sink block sleeved on the second electrode component, and the heat sink fin is connected to the heat sink block. In some embodiments, the at least one heat sink fin includes a first heat sink fin and a second heat sink fin, the first and second heat sink fins having different widths.

[0130] According to other embodiments disclosed herein, an ultraviolet light source includes an ultraviolet lamp, a fan, at least one microwave generator, and a reflector. The fan is positioned above the ultraviolet lamp, and the microwave generator is positioned between the ultraviolet lamp and the fan. The microwave generator includes at least one heat sink extending toward the ultraviolet lamp. The reflector is positioned between the microwave generator and the ultraviolet lamp. In some embodiments, the microwave generator further includes a water-cooling conduit passing through the heat sink. In some embodiments, the at least one microwave generator includes a first microwave generator and a second microwave generator, which are used to generate different microwave radio frequencies.

[0131] According to further embodiments of this disclosure, a substrate processing method includes exposing oxygen to ultraviolet radiation generated by an ultraviolet light source to form ozone in a processing area, then exposing the substrate to ozone to form an oxide layer on the surface of the substrate, providing airflow through a heat sink of the ultraviolet light source for heat exchange, wherein the heat sink includes at least one air channel with one end facing the substrate, and then performing an etching step to remove the oxide layer on the substrate surface. In some embodiments, the substrate processing method further includes forming an epitaxial layer on the substrate after the etching step.

[0132] The foregoing outlines the features of several embodiments or examples, enabling those skilled in the art to better understand the forms of some embodiments disclosed herein. Those skilled in the art should understand that some embodiments disclosed herein can be readily used as the basis for designing or modifying other processes and structures to achieve the same purposes and / or realize the same advantages of the embodiments or examples described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of some embodiments disclosed herein, and various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of some embodiments disclosed herein.

Claims

1. An ultraviolet light source with a microwave generator, characterized in that, The microwave generator includes: A core component, which includes: A first electrode element; and A second electrode element is sleeved on the first electrode element; A first magnetic element is sleeved on the first electrode element; A second magnetic element is sleeved on the first electrode element and separated from the first magnetic element, the second electrode element being located between the first magnetic element and the second magnetic element; and A heat sink, fitted onto the second electrode element, includes a plurality of radially arranged heat dissipation fins extending toward the second magnetic element. The heat dissipation fins include a plurality of first heat dissipation fins with a smaller width and a plurality of second heat dissipation fins with a larger width. The first heat dissipation fins are mounted inside an outer bracket of the microwave generator, while the second heat dissipation fins extend beyond the outer bracket of the microwave generator. The core component has a vertical axis, and the ultraviolet light source includes an ultraviolet lamp tube and a fan. The ultraviolet lamp tube and the fan are located on opposite sides of the microwave generator in the direction of the vertical axis, so as to form multiple air channels between the ultraviolet lamp tube and the fan.

2. The ultraviolet light source with a microwave generator according to claim 1, characterized in that, The heat sink includes an inner ring, and the heat sink fins are U-shaped heat sinks connected to the inner ring.

3. The ultraviolet light source with a microwave generator according to claim 1, characterized in that, The heat sink includes an inner ring, and the heat sink fins are branched at the tail end and connected to the inner ring.

4. The ultraviolet light source with a microwave generator according to claim 1, characterized in that, The heat sink includes a heat sink block sleeved on the second electrode element, and the heat sink fins are connected to the heat sink block.

5. The ultraviolet light source with a microwave generator according to claim 1, characterized in that, The heat dissipation fins have a first sub-part and a second sub-part at one end, the first sub-part and the second sub-part extending in different directions, and the angle between the first sub-part and the second sub-part is an acute angle.

6. An ultraviolet light source, characterized in that, Include: One ultraviolet lamp tube; A fan is positioned above the ultraviolet lamp tube; At least one microwave generator includes a heat sink comprising a plurality of radially arranged heat dissipation fins. The at least one microwave generator has a longitudinal axis and is disposed between an ultraviolet lamp and a fan along this axis. The heat dissipation fins of the microwave generator extend toward the ultraviolet lamp to form a plurality of airflow channels between the ultraviolet lamp and the fan. The heat dissipation fins include a plurality of first heat dissipation fins with a smaller width and a plurality of second heat dissipation fins with a larger width. The first heat dissipation fins are mounted inside an outer support of the microwave generator, while the second heat dissipation fins extend beyond the outer support of the microwave generator. A reflector is positioned between the microwave generator and the ultraviolet lamp.

7. The ultraviolet light source according to claim 6, characterized in that, The microwave generator also includes a water-cooled conduit that passes through the heat dissipation fins.

8. The ultraviolet light source according to claim 6, characterized in that, The at least one microwave generator includes a first microwave generator and a second microwave generator, the first microwave generator and the second microwave generator being used to generate different microwave radio frequencies.

9. A substrate processing method, characterized in that, Include: Oxygen is exposed to ultraviolet radiation generated by an ultraviolet light source as described in claim 1 or 6 to form ozone in a treatment area; A substrate is exposed to the ozone to form an oxide layer on the surface of the substrate; An airflow is provided through the heat sink of the ultraviolet light source for heat exchange, wherein one end of the airflow channels of the heat sink faces the substrate; as well as An etching step is performed to remove the oxide layer on the surface of the substrate.

10. The substrate processing method according to claim 9, characterized in that, It also includes forming an epitaxial layer on the substrate after the etching step.

Images