Light-emitting device and display panel

Abstract

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a light-emitting device and a display panel. BACKGROUND

[0002] OLED (Organic Light Emitting Diode) has the advantages of self-luminous, wide viewing angle, high contrast, short response time, low power consumption, etc., and is widely used in light-emitting devices of display panels. At present, many OLED display panels apply a stacking technology, that is, two RGB light-emitting layers are arranged in a stacked manner to improve the luminous brightness of the light-emitting device and further improve the display effect of the OLED display panel.

[0003] However, the light-emitting device with the stacked structure has the phenomenon of excessively high driving voltage when operating at high temperature, which further leads to defects such as high power consumption and low luminous efficiency. SUMMARY

[0004] Based on the deficiencies and defects in the prior art, the purpose of the present application is to provide a light-emitting device and a display panel, which can reduce the driving voltage of the light-emitting device when operating at high temperature.

[0005] To achieve the above purpose, the present application first provides a light-emitting device, comprising a first electrode, a second electrode, at least two light-emitting structure layers arranged in a stacked manner, a charge generation layer, and an ion blocking and electron transport layer; wherein the second electrode is arranged opposite to the first electrode; the light-emitting structure layer is located between the first electrode and the second electrode; the charge generation layer is located between the two light-emitting structure layers; and the ion blocking and electron transport layer is located between the charge generation layer and the electron transport and injection layer of the light-emitting structure layer.

[0006] Optionally, the material of the ion blocking and electron transport layer includes a compound that reacts with metal ions, or / and a compound that absorbs metal ions.

[0007] Optionally, the electron mobility of the ion blocking and electron transport layer is greater than 3×10 -6 cm 2 V -1 S -1 and less than 3×10 -3 cm 2 V -1 S -1 .

[0008] Optionally, the thickness of the ion blocking and electron transport layer ranges from 1 nm to 10 nm.

[0009] Optionally, the charge generation layer further comprises an electron generation layer, a hole generation layer, and a charge transport layer, the electron generation layer is located on the ion blocking and electron transport layer, the charge transport layer is located on the electron generation layer, and the hole generation layer is located on the charge transport layer.

[0010] Optionally, the material of the charge transport layer is a material with charge transport capability, including at least one of metal compounds, alkali metals and inorganic compounds.

[0011] Optionally, the thickness of the charge transport layer ranges from 0.1 nm to 15 nm.

[0012] Optionally, the light-emitting structure layer further includes a hole injection and transport layer, a compensation layer, a light-emitting layer, a hole blocking layer, and an electron transport and injection layer stacked sequentially along the light emission direction; the light-emitting layer includes multiple sub-light-emitting layers with different emission colors, and the compensation layer includes multiple sub-compensation layers with different thicknesses, the thickness of the sub-compensation layer being matched with the emission color of the sub-light-emitting layer to adjust the optical path of each sub-light-emitting layer.

[0013] Optionally, the thickness of the sub-emitting layer ranges from 15 nm to 50 nm, and the thickness of the compensation layer ranges from 3 nm to 100 nm.

[0014] The present invention also provides a display panel, including a substrate and the above-mentioned light-emitting device, wherein the light-emitting device is located on the substrate.

[0015] Compared with the prior art, the beneficial effects of the present invention include: the light-emitting device of the present invention includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge generation layer, and an ion blocking and electron transport layer; wherein, the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge generation layer is located between the two light-emitting structural layers; and the ion blocking and electron transport layer is located between the charge generation layer and the electron transport and injection layer of the light-emitting structural layer. Under high-temperature operation, the ion blocking and electron transport layer can prevent ions in the charge generation layer from diffusing into the electron transport and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and simultaneously improving the transport efficiency of electrons from the charge generation layer to the electron transport and injection layer. While increasing the luminous brightness, it effectively stabilizes and reduces the driving voltage during the operation of the light-emitting device, improving luminous efficiency, reducing power consumption, and extending service life. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments or prior art, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the stacked structure of the light-emitting device according to an embodiment of the present invention. Figure 1 ;

[0018] Figure 2 is a schematic diagram of a layer structure of a light emitting device according to an embodiment of the present application Figure 2 ;

[0019] Figure 3 is a schematic diagram of a layer structure of a light emitting device according to an embodiment of the present application Figure 3 ;

[0020] Figure 4 is a schematic diagram of a layer structure of a light emitting device according to an embodiment of the present application

[0021] Figure 5 is a schematic diagram of a layer structure of a light emitting device according to an embodiment of the present application Figure 4 ;

[0022] Figure 6 is a schematic diagram of a layer structure of a light emitting device according to an embodiment of the present application Figure 5 ;

[0023] Figure 7 is a high temperature life curve diagram of a light emitting device according to an embodiment of the present application

[0024] Figure 8 is a high temperature life voltage change curve diagram of a light emitting device according to an embodiment of the present application DETAILED DESCRIPTION

[0025] The following description of the embodiments is provided as an example to illustrate the present application which can be implemented. In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be interpreted in a broad sense, for example, can be fixed connection, can be detachable connection, or integral connection; can be mechanical connection, or electrical connection or can communicate with each other; can be directly connected, or indirectly connected through an intermediate medium, can be the internal connection of two elements or the interaction relationship between two elements. At the same time, the terms "first", "second" in the present application are for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise explicitly specified and limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0026] With the development of display technology, OLED technology has been widely applied in the display industry. In recent years, it has found increasingly widespread use in automotive displays, computer monitors, television screens, mobile phone screens, and commercial displays, demonstrating broad application prospects. Compared to LCD, OLED offers advantages such as self-emissive display, wide viewing angle, high contrast, short response time, and low power consumption, making it a next-generation flexible display device. Compared to other display panels, organic light-emitting display panels feature fast response time, high luminous efficiency, high brightness, and wide viewing angle. The display industry is also increasing its R&D investment in OLED technology, covering traditional fields such as mobile phones, VR (virtual reality) / AR (augmented reality), automotive displays, and lighting.

[0027] Currently, many OLED display panels utilize stacked technology, which involves stacking two RGB light-emitting layers to enhance the brightness of the light-emitting devices and further improve the display effect of the OLED display panel. However, this stacked structure of light-emitting devices can lead to excessively high driving voltages when operating at high temperatures, resulting in defects such as high power consumption and low luminous efficiency.

[0028] Therefore, embodiments of the present invention provide a light-emitting device to solve the above-mentioned technical problems. For example... Figure 1 As shown, the light-emitting device of this embodiment includes a first electrode 1, a second electrode 2, at least two stacked light-emitting structural layers 3, a charge-generating layer 4, and an ion-blocking and electron-transporting layer 5; wherein, the second electrode 2 is disposed opposite to the first electrode 1; the light-emitting structural layer 3 is located between the first electrode 1 and the second electrode 2; the charge-generating layer 4 is located between the two light-emitting structural layers 3; and the ion-blocking and electron-transporting layer 5 is located between the charge-generating layer 4 and the electron-transporting and injection layer 305 of the light-emitting structural layer 3.

[0029] In this embodiment, under high-temperature operation, the ion blocking and electron transport layer 5 can prevent ions in the charge generation layer 4 from diffusing into the electron transport and injection layer 305, thus avoiding affecting electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the transport efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305. While improving the luminous brightness of the light-emitting structure layer 3, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation, thereby improving luminous efficiency, reducing power consumption, and extending service life.

[0030] In one embodiment of this invention, the first electrode 1 can be an anode, and the second electrode 2 can be a cathode. For example... Figure 2As shown, the light-emitting structure layer 3 can include a first light-emitting structure layer 31 and a second light-emitting structure layer 32. In the light-emitting direction, the first electrode 1, the first light-emitting structure layer 31, the ion blocking and electron transport layer 5, the charge generation layer 4, the second light-emitting structure layer 32, and the second electrode 2 are sequentially stacked. Specifically, the ion blocking and electron transport layer 5 can block the n-type doped ions in the charge generation layer 4 from migrating into the electron transport and injection layer 305 of the first light-emitting structure layer 31, avoid negatively affecting the performance of the electron transport and injection layer 305, and improve the transmission efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305.

[0031] In an embodiment of the present embodiment, the material of the ion blocking and electron transport layer 5 includes a compound that reacts with metal ions or / and a compound that absorbs metal ions. Using such a material, part of the ions in the ion blocking and electron transport layer 5 can react with the n-type doped ions or part of the metal ions to form radical anions, which can block the diffusion of metal ions and have good electron transport properties. This can effectively block the n-type doped ions in the charge generation layer 4 from migrating into the electron transport and injection layer 305, improve the transmission efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305, effectively reduce the driving voltage of the device, slow down the aging rate of the device, and improve the high-temperature life of the device.

[0032] In an embodiment of the present embodiment, the electron mobility of the ion blocking and electron transport layer 5 is greater than 3 x 10 - 6 cm 2 V -1 S -1 and less than 3 x 10 -3 cm 2 V -1 S -1 . Within this range of electron mobility, the ion blocking and electron transport layer 5 can effectively block the n-type doped ions in the charge generation layer 4 from migrating into the electron transport and injection layer 305, improve the transmission efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305, effectively reduce the driving voltage of the device, slow down the aging rate of the device, and improve the high-temperature life of the device.

[0033] In an embodiment of the present embodiment, the thickness of the ion blocking and electron transport layer 5 is in the range of 1 nm to 10 nm. Within this range of thickness, the ion blocking and electron transport layer 5 can effectively block the n-type doped ions in the charge generation layer 4 from migrating into the electron transport and injection layer 305, improve the transmission efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305, effectively reduce the driving voltage of the device, slow down the aging rate of the device, and improve the high-temperature life of the device.

[0034] In one embodiment of the present embodiment, the charge generation layer 4 further comprises an electron generation layer 41, a hole generation layer 42 and a charge transport layer 43. The electron generation layer 41 is located on the ion blocking and electron transport layer 5, the charge transport layer 43 is located on the electron generation layer 41, and the hole generation layer 42 is located on the charge transport layer 43. The charge transport layer 43 can improve the generation and separation of charges in the electron generation layer 41 and the hole generation layer 42, maximize the transmission of holes and electrons to the light-emitting structure layer 3, prevent the accumulation of charges to form an internal space electric field, and reduce the operating voltage, improve the efficiency and service life of the light-emitting device.

[0035] The ion blocking and electron transport layer 5 can block the n-type doped ions in the electron generation layer 41 from migrating to the electron transport and injection layer 305 of the first light-emitting structure layer 31, avoid negatively affecting the performance of the electron transport and injection layer 305, and improve the transmission efficiency of electrons from the charge generation layer 4 to the electron transport and injection layer 305.

[0036] The ion blocking and electron transport layer 5 cooperates with the charge transport layer 43 to stably separate holes and electrons, improve electron injection, delay the entry of n-type doped ions or part of metal ions into the electron transport and injection layer 305 at high temperature, reduce the mobility of the electron transport and injection layer 305, delay the aging of the device, and prolong the service life of the device at high temperature.

[0037] Specifically, the electron generation layer 41 is an n-type electron generation layer, which is a complex of a material with electron transport performance and metal doping. The hole generation layer 42 is a p-type doped hole transport material.

[0038] Further, the material of the charge transport layer 43 is a material with charge transport capability, including at least one of a metal compound, an alkaline metal and an inorganic compound. Specifically, it can include one or more of silver, lithium, ytterbium, magnesium, gold, barium, calcium, aluminum, indium, lithium fluoride, indium tin oxide, indium zinc oxide.

[0039] Further, the thickness of the charge transport layer 43 ranges from 0.1 nm to 15 nm. This thickness range can ensure the transmission effect of holes and electrons.

[0040] In the present embodiment, the first light-emitting structure layer 31 and the second light-emitting structure layer 32 have basically the same structure, and the first light-emitting structure layer 31 is taken as an example for description. As shown in FIG. 1, the first light-emitting structure layer 31 comprises a first electron transport and injection layer 301, a first electron transport layer 302, a first light-emitting layer 303 and a first hole transport layer 304. Figure 3As shown, the light-emitting structure layer 3 comprises, in sequence along the light-emitting direction (from the first electrode 1 to the second electrode 2), a hole injection and transport layer 301, a compensation layer 302, a light-emitting layer 303, a hole blocking layer 304, and an electron transport and injection layer 305; the light-emitting layer 303 comprises a plurality of sub-light-emitting layers with different light-emitting colors, and the compensation layer 302 comprises a plurality of sub-compensation layers with different thicknesses, the thickness of each sub-compensation layer being matched with the light-emitting color of the corresponding sub-light-emitting layer to adjust the optical path of each sub-light-emitting layer. Further, a p-type hole injection layer 306 can be further arranged between the first electrode 1 and the hole injection and transport layer 301.

[0041] Specifically, the sub-light-emitting layers comprise a red light-emitting layer R, a green light-emitting layer G, and a blue light-emitting layer G, and the sub-compensation layers comprise a red compensation layer R', a green compensation layer G', and a blue compensation layer B'. The red compensation layer R' corresponds to the red light-emitting layer R, the green compensation layer G' corresponds to the green light-emitting layer G, and the blue compensation layer B' corresponds to the blue light-emitting layer G. Since the wavelength of red light is greater than that of green light, and the wavelength of green light is greater than that of blue light, the thickness of the red compensation layer R' is greater than that of the green compensation layer G', and the thickness of the green compensation layer G' is greater than that of the blue compensation layer B', so as to adjust the optical path of the light-emitting layer 303, make the optical paths of red light, green light, and blue light the same, form a microcavity effect, and improve the light-emitting effect of the light-emitting layer 303.

[0042] In one embodiment of the present embodiment, the thickness of each sub-light-emitting layer ranges from 15 nm to 50 nm, and the thickness of the compensation layer 302 ranges from 3 nm to 100 nm. In this way, a better light-emitting effect of the light-emitting structure layer 3 can be ensured.

[0043] In the present embodiment, the blue light-emitting layer G can be a fluorescent material, a TADF (thermally activated delayed fluorescence) material, a superfluorescent material, etc., the red light-emitting layer R and the green light-emitting layer G can adopt a Single Host-Dopant (single host-dopant) phosphorescent material or a Pre-mix Host-Dopant (pre-mix host-dopant) material. The electron transport and injection layer 305 can be an electron transport material, or be doped with an n-type compound (the n-type is not limited to Mg, Yb, Li, etc. metals, but can also be Cs2CO3, LiH, LiNH3, etc. metal compounds). The cathode can be Mg-Ag, Ag, Al, Al-Ca, etc. alloys. The anode can be ITO, Ag, IZO, etc. metals and compounds.

[0044] In one embodiment of the present embodiment, an electron blocking layer can be further arranged between the hole injection and transport layer 301 and the compensation layer 302. A light extraction layer 6 can be further arranged on the cathode, the light extraction layer 6 adopting a material with high refractive index to further improve the display brightness of the light-emitting device.

[0045] In the embodiment, the thickness of the anode is 80-150 nm, the thickness of the p-type hole injection layer is 80-150 nm, the thickness of the hole injection and transport layer 301 is 80-150 nm, the thickness of the compensation layer 302 is 3-100 nm, the thickness of the light emitting layer 303 is 15-50 nm, the thickness of the hole blocking layer 304 is 2-8 nm, the thickness of the electron transport and injection layer 305 is 20-45 nm, the thickness of the electron generation layer 41 is 4-25 nm, the thickness of the hole generation layer 42 is 3-15 nm, the thickness of the cathode is 10-90 nm, and the thickness of the light extraction layer 6 is 50-90 nm.

[0046] As shown in the prior art, Figure 4 the light emitting device structure of the stacked structure is as follows: the first electrode 1 (anode), the first light emitting structure layer 31 (including the electron transport and injection layer 305), the electron generation layer 41, the hole generation layer 42, the second light emitting structure layer 32, and the second electrode 2 (cathode) are sequentially arranged along the light emitting direction.

[0047] Embodiment one of the present application, as shown in the prior art, Figure 5 on the basis of the prior art, a charge transport layer 43 is arranged between the electron generation layer 41 and the hole generation layer 42. Compared with the prior art, the driving voltage of the light emitting device of embodiment one is reduced to 97% of the prior art, the light emitting efficiency is improved to 102% of the prior art, the external quantum efficiency (EQE) is improved to 101% of the prior art, the high temperature (85°C) life is extended to 130% of the prior art, and the high temperature life voltage change amount is reduced to 17% of the prior art.

[0048] Embodiment two of the present application, as shown in the prior art, Figure 6 on the basis of the prior art, an ion blocking and electron transport layer 5 is arranged between the electron transport and injection layer 305 of the first light emitting structure layer 31 and the electron generation layer 41. Compared with the prior art, the driving voltage of the light emitting device of embodiment two is reduced to 96% of the prior art, the light emitting efficiency is improved to 103% of the prior art, the external quantum efficiency (EQE) is improved to 102% of the prior art, the high temperature (85°C) life is extended to 125% of the prior art, and the high temperature life voltage change is reduced to 31% of the prior art.

[0049] Embodiment three of the present application, as shown in the prior art, Figure 2As shown, on the basis of embodiment one, an ion blocking and electron transport layer 5 is arranged between the electron transport and injection layer 305 and the electron generation layer 41 of the first light emitting structure layer 31. Compared with the prior art, the driving voltage of the light emitting device of embodiment three is reduced to 95% of the prior art, the luminous efficiency is increased to 103% of the prior art, the external quantum efficiency (EQE) is increased to 103% of the prior art, the high temperature (85℃) life is extended to 135% of the prior art, and the high temperature life voltage change is reduced to 6% of the prior art.

[0050] As shown in the above Figure 7 The high temperature life (the time consumption of the luminous brightness from 100% to 95% at 85℃) of the embodiment one, the embodiment two and the embodiment three of the present application compared with the prior art are all obviously improved.

[0051] As shown in the above Figure 8 The high temperature life voltage change (the change of the driving voltage during the luminous brightness from 100% to 95% at 85℃) of the embodiment one, the embodiment two and the embodiment three of the present application compared with the prior art are all obviously reduced and improved.

[0052] The embodiment of the present application provides a display panel, which comprises a substrate and the light emitting device provided by the above embodiment, and the light emitting device is located on the substrate.

[0053] In the display panel of the embodiment, the light emitting device comprises a first electrode 1, a second electrode 2, at least two light emitting structure layers 3 arranged in a stack, a charge generation layer 4 and an ion blocking and electron transport layer 5; wherein the second electrode 2 is arranged opposite to the first electrode 1; the light emitting structure layer 3 is located between the first electrode 1 and the second electrode 2; the charge generation layer 4 is located between the two light emitting structure layers 3; and the ion blocking and electron transport layer 5 is located between the charge generation layer 4 and the electron transport and injection layer 305 of the light emitting structure layer 3.

[0054] In the case of high temperature working, the ion blocking and electron transport layer 5 can block the ion diffusion in the charge generation layer 4 to the electron transport and injection layer 305, avoid affecting the injection and transport of electrons, prevent the mutual diffusion or interaction of holes and electrons, and also improve the transport efficiency of the electrons from the charge generation layer 4 to the electron transport and injection layer 305; while improving the luminous brightness of the light emitting structure layer 3, the driving voltage of the light emitting device during working is effectively stabilized and reduced, the luminous efficiency is improved and the power consumption is reduced, and the service life is prolonged.

[0055] The embodiment of the present application also provides a manufacturing method of a light emitting device and a display panel, and the specific process is as follows:

[0056] First, a TFT (thin-film transistor) driving circuit is fabricated on the substrate. The TFT can be made of LTPS (low-temperature polycrystalline silicon), LTPO (low-temperature polycrystalline oxide), or IGZO (indium gallium zinc oxide).

[0057] Secondly, an Ag film is fabricated on the TFT, and an anode (the anode is ITO, ITO / Ag / ITO, IZO, etc.) is fabricated on the Ag film.

[0058] Then, a p-type hole injection layer, a hole injection and transport layer 301, a blue compensation layer B', a blue light-emitting layer G, a green compensation layer G', a green light-emitting layer G, a red compensation layer R', a red light-emitting layer R, a hole blocking layer 304, an electron transport and injection layer 305, an electron generation layer 41, a charge transport layer 43, a hole generation layer 42, a hole injection and transport layer 301, a blue compensation layer B', a blue light-emitting layer G, a green compensation layer G', a green light-emitting layer G, a red compensation layer R', a red light-emitting layer R, a hole blocking layer 304, an electron transport and injection layer 305, and a cathode layer are sequentially formed on the anode by vapor deposition or other methods.

[0059] Finally, a light extraction layer 6 is formed on the cathode layer.

[0060] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A light-emitting device, characterized in that, include: First electrode; The second electrode is disposed opposite to the first electrode; At least two stacked light-emitting structural layers are provided, wherein the light-emitting structural layers are located between the first electrode and the second electrode; A charge generation layer is located between the two light-emitting structural layers. The charge generation layer further includes an electron generation layer, a hole generation layer, and a charge transport layer. The charge transport layer is located on the electron generation layer, and the hole generation layer is located on the charge transport layer. The electron generation layer is an n-type electron generation layer. An ion blocking and electron transport layer is located between the charge generation layer and the electron transport and injection layer of the light-emitting structure layer. The electron generation layer is located on the ion blocking and electron transport layer. Some ions in the ion blocking and electron transport layer can react with n-type doped ions or some metal ions to form free radical anions. The light-emitting structure layer includes a first light-emitting structure layer and a second light-emitting structure layer. Along the light emission direction, the first electrode, the first light-emitting structure layer, the ion blocking and electron transport layer, the charge generating layer, the second light-emitting structure layer, and the second electrode are stacked in sequence.

2. The light-emitting device according to claim 1, characterized in that, The material of the ion blocking and electron transport layer includes compounds that interact with metal ions and / or compounds that absorb metal ions.

3. The light-emitting device according to claim 1, characterized in that, The electron mobility of the ion barrier and electron transport layer is greater than 3 × 10⁻⁶. -6 cm 2 V -1 S -1 And less than 3×10 -3 cm 2 V -1 S -1 .

4. The light-emitting device according to claim 1, characterized in that, The thickness of the ion blocking and electron transport layer ranges from 1 nm to 10 nm.

5. The light-emitting device according to claim 1, characterized in that, The material of the charge transport layer is a material with charge transport capability, including at least one of metal compounds, alkali metals, and inorganic compounds.

6. The light-emitting device according to claim 1, characterized in that, The thickness of the charge transport layer ranges from 0.1 nm to 15 nm.

7. The light-emitting device according to claim 1, characterized in that, The light-emitting structure layer further includes a hole injection and transport layer, a compensation layer, a light-emitting layer, a hole blocking layer, and an electron transport and injection layer stacked sequentially along the light emission direction; the light-emitting layer includes multiple sub-light-emitting layers with different emission colors, the compensation layer includes multiple sub-compensation layers with different thicknesses, and the thickness of the sub-compensation layer is matched with the emission color of the sub-light-emitting layer to adjust the optical path of each sub-light-emitting layer.

8. The light-emitting device according to claim 7, characterized in that, The thickness of the sub-light-emitting layer ranges from 15 nm to 50 nm, and the thickness of the compensation layer ranges from 3 nm to 100 nm.

9. A display panel, characterized in that, It includes a substrate and a light-emitting device according to any one of claims 1 to 8, wherein the light-emitting device is located on the substrate.

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