Process chamber, semiconductor process equipment and process method

Abstract

The present invention discloses a process chamber, semiconductor process equipment and process method, the process chamber comprises: a chamber, an annular liner assembly is arranged around the inner wall of the chamber, a deposition blocking ring is arranged on the inner ring side of the liner assembly, a base for carrying a substrate to be processed and can be lifted and lowered is arranged at the bottom of the chamber; a plurality of first openings penetrating the side wall of the liner assembly are arranged on the liner assembly along the circumference of the liner assembly; a plurality of second openings penetrating the side wall of the deposition blocking ring are arranged on the deposition blocking ring along the circumference of the deposition blocking ring; a heating lamp assembly opposite to the plurality of first openings is arranged on the inner side wall of the chamber along the circumference of the chamber; when the base drives the deposition blocking ring to rise to the first process position, the second opening is staggered with the first opening; when the base drives the deposition blocking ring to rise to the second process position, the second opening is at least partially overlapped with the first opening, and the second process position is higher than the first process position. The present invention can eliminate the risk of slip and debris in the reflow process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and more specifically, to a process chamber, semiconductor process equipment and a process method. Background Art

[0002] In the back-end process of integrated circuit chip preparation, the most critical technology is to form metal interconnections by magnetron sputtering in physical vapor deposition (PVD). Metal wires are deposited by PVD in the grooves and through-holes formed by photolithography technology to connect transistors to each other to form the required circuits. A complete metal interconnection process usually consists of barrier layer / seed layer deposition, copper electroplating, and chemical mechanical polishing (CMP). However, as the chip feature size decreases, the openings of through-holes and grooves will decrease, while the aspect ratio will increase, which brings great difficulties to the deposition of barrier layer / seed layer.

[0003] Research has shown that the reflow process is a technology that can form a reliable copper interconnect layer. First, a copper seed layer is deposited at low temperature, and then the substrate is heated. Under the action of high temperature (usually above 300°C), the surface mobility and grain agglomeration of copper are enhanced. Under the action of diffusion and capillary force, the surface copper atoms migrate, and the deposited copper is sucked into the bottom of the deep hole, filling it from bottom to top. This completes a cycle of copper reflow. The smaller the deep hole size, the stronger the capillary force, and the better the filling effect. This cycle is repeated until the deep hole is completely filled.

[0004] The base used in the existing copper reflow equipment is a low-temperature electrostatic chuck (ESC). When executing the process, a DC voltage needs to be applied to the ESC to adsorb the substrate through electrostatic action and perform the deposition process. At the same time, gas (back-blowing gas) is passed between the ESC and the substrate to transfer the heat of the substrate to the ESC, thereby cooling the substrate.

[0005] When copper reflow is performed, the DC voltage applied to the ESC is removed, and the adsorption force between the ESC and the substrate is dissipated. This process is called desorption. Then the ESC is lowered, and the ejector pin is raised to raise the substrate to a position higher than the deposition process position. By lowering the ESC and raising the substrate, the distance between the substrate and the ESC is increased, and the irradiation space of the heating lamp to the substrate is obtained. When the substrate rises to a high position, a very high power is applied to the heating lamp to irradiate the energy to the back of the substrate to heat the substrate. When the substrate completes the reflow process at high temperature, the ESC rises again, and the ejector pin descends, causing the substrate to fall to the surface of the ESC. Then the ESC voltage is reapplied to adsorb the substrate, and it is cooled by back-blowing gas, followed by the second deposition process. When the deposition process is completed, the desorption process is carried out, and the ejector pin lifts the substrate and transfers the substrate out of the chamber.

[0006] In this process, the substrate has two adsorption-desorption-lifting processes. When the material on the back of the substrate is not silicon, such as poorly conductive insulating materials such as silicon dioxide or silicon nitride, the charge of the substrate will not be fully released, and the residual charge will generate attraction, resulting in incomplete desorption, which will in turn cause residual suction between the substrate and the ESC. When the substrate is lifted by the ejector pin, it will cause the substrate to deviate. In some cases, when the residual suction is too large, the ejector pin will crush the substrate. Summary of the invention

[0007] The purpose of the present invention is to provide a process chamber, semiconductor process equipment and process method to solve the problems of substrate deviation, deformation, fragmentation, etc. caused by multiple adsorption-desorption and heating of the substrate to be processed in the copper reflow process.

[0008] In a first aspect, the present invention provides a process chamber for a semiconductor process equipment, comprising:

[0009] A cavity, wherein an annular liner component is disposed in the cavity along the circumference of the inner wall of the cavity, a deposition blocking ring is disposed on the inner ring side of the liner component, and a base for carrying a substrate to be processed and capable of being raised and lowered is disposed at the bottom of the cavity;

[0010] The lining component is provided with a plurality of first openings penetrating the side wall of the lining component along the circumferential direction of the lining component; the deposition blocking ring is provided with a plurality of second openings penetrating the side wall of the deposition blocking ring along the circumferential direction of the deposition blocking ring; and the inner side wall of the cavity is provided with a heating lamp assembly opposite to the plurality of first openings along the circumferential direction of the cavity;

[0011] When the base drives the deposition blocking ring to rise to the first process position, the second opening and the first opening are staggered with each other; when the base drives the deposition blocking ring to rise to the second process position, the second opening and the first opening at least partially overlap, and the second process position is higher than the first process position.

[0012] Optionally, the lining assembly includes an upper lining and a lower lining; the upper lining is arranged on the inner top of the cavity, and the lower lining is arranged below the upper lining;

[0013] The lower liner includes a first cylindrical side wall and a second cylindrical side wall which are coaxially arranged, wherein the second cylindrical side wall is located below the first cylindrical side wall, the diameter of the second cylindrical side wall is smaller than the diameter of the first cylindrical side wall, and a plurality of the first openings are arranged on the second cylindrical side wall.

[0014] Optionally, a support member is provided on the top of the side wall of the cavity, a first annular folded edge extending laterally is provided on the top of the first cylindrical side wall, and the first cylindrical side wall is overlapped on the support member through the first annular folded edge;

[0015] The top of the side wall of the second cylinder is formed with an annular step;

[0016] A second annular folding edge extending laterally is provided on the top of the deposition preventing ring, and the deposition preventing ring is overlapped on the annular step through the second annular folding edge.

[0017] Optionally, the bottom of the second cylindrical side wall is provided with a third annular folded edge extending in a direction away from the inner wall of the cavity, and the end of the third annular folded edge has an annular convex edge extending upward;

[0018] A lap joint is provided at the bottom of the deposition blocking ring. The lap joint comprises a transversely arranged annular plate. The lower surface of the annular plate is provided with an annular groove which overlaps and cooperates with the annular convex edge.

[0019] Optionally, the heating lamp assembly comprises an annular reflector and an annular heating lamp tube, the annular reflector is arranged on the inner wall of the cavity along the circumference of the cavity, and the inner side wall of the annular reflector is an arc-shaped reflective surface facing the center of the cavity;

[0020] The annular heating lamp tube is arranged on the arc-shaped reflecting surface through a plurality of supporting members.

[0021] Optionally, the first cylindrical side wall and the second cylindrical side wall are integrally formed;

[0022] Alternatively, the first cylindrical side wall and the second cylindrical side wall are separate components, wherein the bottom of the first cylindrical side wall and the top of the second cylindrical side wall are provided with mutually matching transversely extending overlapping portions.

[0023] Optionally, the deposition blocking ring and the bridge piece are integrally formed;

[0024] Alternatively, the deposition preventing ring and the bridging piece are separate components, wherein the bottom of the deposition preventing ring is provided with a stepped bridging portion cooperating with the outer edge of the bridging piece.

[0025] Optionally, the first opening and the second opening are both long rectangular through holes, and the interval between two adjacent first openings and the interval between two adjacent second openings are both 10-30 mm.

[0026] In a second aspect, the present invention provides a semiconductor process equipment, comprising the process chamber described in the first aspect.

[0027] In a third aspect, the present invention provides a process method using the semiconductor process equipment described in the second aspect, the process method comprising:

[0028] Controlling a susceptor carrying a substrate to be processed to rise to a first process position;

[0029] Passing back-blowing gas between the susceptor and the substrate, and performing a first deposition process on the substrate;

[0030] After the first deposition process is completed, the back-blowing gas between the susceptor and the substrate is stopped;

[0031] Controlling the susceptor to rise to a second process position, and irradiating and heating the substrate by the heating lamp assembly to perform a reflow process;

[0032] After the reflow process is completed, the susceptor is controlled to descend to the first process position, a back-blowing gas is introduced between the susceptor and the substrate again, and a second deposition process is performed on the substrate;

[0033] After the second deposition process is completed, the back-blowing gas between the pedestal and the substrate is stopped.

[0034] The beneficial effects of the present invention are:

[0035] The process chamber of the present invention is provided with a first opening and a second opening on the side walls of the liner assembly and the deposition blocking ring, respectively, and a heating lamp assembly opposite to the first opening is provided on the inner wall of the chamber. When the base drives the deposition blocking ring to rise to the first process position, the second opening and the first opening are staggered with each other. At this time, the deposition process can ensure that the reactants in the deposition process will not be deposited on the inner wall of the chamber. When the base drives the deposition blocking ring to rise to the second process position, the second opening and the first opening at least partially overlap. At this time, the light of the heating lamp assembly can be irradiated to the substrate to be processed on the base through the first opening and the second opening to heat the substrate to complete the copper reflow process. Compared with the prior art, the present invention does not need to perform electrostatic desorption to allow the substrate to be processed to leave the base during the switching process between the first process position for deposition and the second process position for copper reflow. Therefore, the risk of slippage caused by the ejector pin lifting the substrate and the problem of position drift caused by the lifting of the substrate can be effectively avoided. The residual suction caused by multiple adsorption-desorption can also be prevented, thereby eliminating the risk of slippage and debris.

[0036] The device of the present invention has other characteristics and advantages, which will be obvious from the drawings incorporated herein and the following detailed description, or will be described in detail in the drawings incorporated herein and the following detailed description, which together are used to explain the specific principles of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and other objects, features and advantages of the present invention will become more apparent through a more detailed description of exemplary embodiments of the present invention in conjunction with the accompanying drawings, in which like reference numerals generally represent like components.

[0038] Figure 1 A longitudinal cross-sectional structure diagram of a process chamber according to Embodiment 1 of the present invention is shown.

[0039] Figure 2 A schematic diagram of a first opening on the second cylindrical side wall of a lower liner in a process chamber according to Embodiment 1 of the present invention and a second opening on a deposition blocking ring is shown.

[0040] Figure 3 A top view of a ring-shaped heating lamp tube in a process chamber according to Embodiment 1 of the present invention is shown.

[0041] Figure 4 A schematic diagram of a substrate support in a first process position in a process chamber according to Embodiment 1 of the present invention is shown.

[0042] Figure 5 A schematic diagram of a substrate support in a second process position in a process chamber according to Embodiment 1 of the present invention is shown.

[0043] Figure 6 A schematic structural diagram of another lower liner of a process chamber according to Embodiment 1 of the present invention is shown.

[0044] Figure 7 A schematic structural diagram of another deposition barrier ring in a process chamber according to Embodiment 1 of the present invention is shown.

[0045] Figure 8 A step diagram of a process method according to Example 3 of the present invention is shown.

[0046] Fig. 9 A flow chart of the steps of a copper reflow process method according to Embodiment 3 of the present invention is shown. DETAILED DESCRIPTION

[0047] In the existing copper reflow process, the substrate has a process of adsorption-desorption-lifting-heating-falling-adsorption-desorption-lifting. In this process, the substrate has two adsorption-desorption-lifting processes. When the material on the back of the substrate is not silicon, such as insulating materials such as silicon dioxide or silicon nitride, there will be a problem of incomplete desorption. Incomplete desorption will cause residual suction between the substrate and the ESC, which will cause the substrate to deviate when the substrate is lifted by the ejector pin. In some cases, when the residual suction is too large, the ejector pin will cause the substrate to be crushed.

[0048] In another case, there is a relatively large stress in the substrate. After heating, the substrate will bend and deform (for example, the height difference exceeds 1mm), which will also cause the substrate to shift. Even if it does not shift, after the substrate falls, it will not be able to be adsorbed again because of the small contact surface with the ESC.

[0049] Similarly, in the whole process, there are two adsorption processes, which will greatly increase the residual suction force of the ESC and cause substrate displacement / fragmentation. The large displacement of the substrate will cause the substrate to be smashed by the robot arm or crushed by the isolation valve when it is transferred out of the chamber.

[0050] The process chamber, semiconductor process equipment and process method of the present invention can solve the problems of substrate deviation, deformation, fragmentation and the like caused by repeated adsorption-desorption and heating of the substrate in the copper reflow process.

[0051] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art. Example 1

[0052] Figure 1 A longitudinal cross-sectional structure diagram of a process chamber according to Embodiment 1 of the present invention is shown.

[0053] like Figure 1 As shown, a process chamber comprises:

[0054] The cavity has an annular liner component disposed around the inner wall of the cavity, a deposition blocking ring 214 is disposed on the inner ring side of the liner component, and a base 202 for carrying a substrate to be processed and capable of being raised and lowered is disposed at the bottom of the cavity;

[0055] A plurality of first openings 213 penetrating the side wall of the liner assembly are provided on the liner assembly along the circumference of the liner assembly; a plurality of second openings 215 penetrating the side wall of the deposition blocking ring 214 are provided on the deposition blocking ring 214 along the circumference of the deposition blocking ring 214; a heating lamp assembly opposite to the plurality of first openings 213 is provided on the inner side wall of the cavity along the circumference of the cavity;

[0056] When the base 202 drives the deposition blocking ring 214 to rise to the first process position, the second opening 215 and the first opening 213 are staggered with each other; when the base 202 drives the deposition blocking ring 214 to rise to the second process position, the second opening 215 and the first opening 213 at least partially overlap, and the second process position is higher than the first process position.

[0057] Preferably, in this embodiment, when the base 202 drives the deposition blocking ring 214 to rise to the second process position, the second opening 215 and the first opening 213 are completely overlapped in height and the heating light assembly is located above the top of the base 202. The light from the heating light assembly can be irradiated through the first opening 213 and the second opening 215 to the upper surface of the substrate located on the base 202 to heat the substrate.

[0058] In this embodiment, the cavity includes a lower cavity 201 and an upper cavity 203;

[0059] The lower cavity 201 includes a bottom wall and an annular side wall; the base 202 includes an electrostatic chuck, and a lifting mechanism penetrating the bottom wall of the lower cavity 201 is provided below the electrostatic chuck.

[0060] The upper cavity 203 is cylindrical, and the upper cavity 203 is coaxially arranged with the lower cavity 201;

[0061] A ceramic ring 204 is disposed on the top of the upper cavity 203 , and a target 205 is placed on the ceramic ring 204 . The target 205 can seal the cavity formed by the lower cavity 201 and the upper cavity 203 .

[0062] In this embodiment, the lining assembly includes an upper lining 210 and a lower lining 212; the upper lining 210 is arranged at the inner top of the cavity, and the lower lining 212 is arranged below the upper lining 210; the upper lining 210 is arranged at the inner top of the upper cavity 203;

[0063] The lower liner 212 includes a first cylindrical side wall 216 and a second cylindrical side wall 217 which are coaxially arranged. The second cylindrical side wall 217 is located below the first cylindrical side wall 216 . The diameter of the second cylindrical side wall 217 is smaller than the diameter of the first cylindrical side wall 216 . A plurality of first openings 213 are arranged on the side wall of the second cylinder 217 .

[0064] In this embodiment, a support is provided on the top of the side wall of the cavity, and a first annular fold extending laterally is provided on the top of the first cylindrical side wall 216, and the first cylindrical side wall 216 is overlapped on the support through the first annular fold;

[0065] The top of the second cylindrical side wall 217 is formed with an annular step;

[0066] A second annular folded edge extending laterally is provided on the top of the deposition preventing ring 214 , and the deposition preventing ring 214 is overlapped on the annular step through the second annular folded edge.

[0067] Specifically, the support member includes a first annular step arranged on the inner side of the top of the side wall of the upper cavity 203 and an upper liner support ring 211 arranged on the first annular step, the top of the first cylindrical side wall 216 is provided with a first annular folded edge extending laterally outward, and the first cylindrical side wall 216 is overlapped on the first annular step through the first annular folded edge; the upper liner 210 is arranged on the upper liner support ring 211.

[0068] The inner edge bottom of the upper liner 210 is provided with an annular side wall extending downward, the outer diameter of the annular side wall is smaller than the inner diameter of the first cylindrical side wall 216, and the annular side wall extends to the bottom of the first annular folded edge, and the annular side wall can cover the gap between the upper liner 210 and the liner support ring 211 and the gap between the liner support ring 211 and the lower liner 212;

[0069] A second annular step is provided at the outer edge of the top of the upper liner 210 , and the surface of the second annular step is flush with the top of the upper cavity 203 . The ceramic ring 204 is disposed on the top of the upper cavity 203 and the second annular step.

[0070] Among them, an annular step is formed at the top of the second cylindrical side wall 217; the top of the deposition blocking ring 214 is provided with a second annular fold extending laterally outward, and the deposition blocking ring 214 is overlapped on the annular step at the top of the second cylindrical side wall 217 through the second annular fold.

[0071] A third annular folded edge is provided at the bottom of the second cylindrical side wall 217 and extends in a direction away from the inner wall of the cavity, and the end of the third annular folded edge has an annular convex edge extending upward; a lap joint 218 is provided at the bottom of the deposition blocking ring 214, and the lap joint 218 includes a transversely arranged annular plate, and the lower surface of the annular plate is provided with an annular groove that overlaps with the annular convex edge; preferably, the first cylindrical side wall 216 and the second cylindrical side wall 217 are integrally formed, and the deposition blocking ring 214 and the lap joint 218 are integrally formed.

[0072] In this embodiment, the top edge of the base 202 is further provided with a third annular step that overlaps with the inner edge of the annular plate.

[0073] like Figure 1 and Figure 3 As shown, in this embodiment, the heating lamp assembly includes an annular reflector 223 and an annular heating lamp tube 220. The annular reflector 223 is arranged on the inner wall of the cavity along the circumference of the cavity, and the inner side wall of the annular reflector 223 is an arc-shaped reflective surface facing the center of the cavity;

[0074] The annular heating lamp tube 220 is disposed on the arc-shaped reflecting surface through a plurality of supporting members 221 .

[0075] Specifically, the annular reflector 223 is a component surrounding the central axis of the chamber. It is made of aluminum or stainless steel and has a concave curvature facing the center of the chamber. When its inner surface is processed, it is mirror polished to obtain a high reflectivity to reflect the light of the annular heating lamp tube 220 and reflect the light it emits to the center of the process chamber.

[0076] The annular heating lamp tube 220 is an annular lamp tube that surrounds the central axis of the chamber. The power of the annular heating lamp tube 220 is preferably 5kW-40kW. The annular heating lamp tube 220 has a first power supply end 401 and a second power supply end 402. The power supply line 222 penetrates the side wall of the upper cavity 203 and is connected to the first power supply end 401 and the second power supply end 402 to provide electrical energy for the annular heating lamp tube 220.

[0077] like Figure 2 As shown, in this embodiment, the first opening 213 and the second opening 215 are both long rectangular through holes, and the interval between two adjacent first openings 213 and the interval between two adjacent second openings 215 are both 10-30 mm.

[0078] Specifically, the lower liner 212 and the deposition blocking ring 214 are provided with the same opening method. In one example, four long rectangular openings can be dug along the circumference of the side wall of the lower liner 212 or the deposition blocking ring 214. The height of the opening is at least 20 mm, preferably 40 mm. As many gaps as possible need to be dug in the direction surrounding the chamber so that the light of the heating lamp can pass through, and only a narrow width interval is retained between adjacent openings as a connecting bridge between the upper and lower parts. In order to ensure that the component has sufficient strength, there should be at least 3 connecting parts located in the adjacent opening interval area, and it can also be 4, 5, 6, etc. The width of the connecting part needs to be at least 10 mm, preferably 30 mm, to ensure sufficient strength. The first opening 213 and the second opening 215 can overlap or be staggered in the vertical direction. Since the interval connecting part of the adjacent openings is narrow enough, and the lamp tube is a surrounding type, the lamp tube parts on both sides of the connecting part can still irradiate the substrate. The area of ​​the substrate illuminated by the light is large enough, and when the substrate is heated, there will be a heat conduction process inside it, which can make the substrate as a whole rise to a high temperature. Figure 6 As shown, the first cylindrical side wall 216 and the second cylindrical side wall 217 may also be separate components, wherein the bottom of the first cylindrical side wall 216 is provided with a fourth annular fold extending laterally in a direction away from the inner wall of the cavity;

[0079] The top of the second cylindrical side wall 217 is provided with a fifth annular fold extending laterally in the direction toward the inner wall of the cavity. In one embodiment, the second cylindrical side wall 217 can be overlapped on the fourth annular fold through the fifth annular fold, and the fifth annular fold forms an annular step at the top of the second cylindrical side wall, and the deposition blocking ring 214 is overlapped on the fifth annular fold through the second annular fold at the top. In another embodiment, the second cylindrical side wall 217 can also be overlapped on the top of the annular reflection component 223 through the fifth annular fold, and the fourth annular fold of the first cylindrical side wall is overlapped on the fifth annular fold. At this time, the fourth annular fold or the fourth annular fold and the fifth annular fold together form an annular step at the top of the second cylindrical side wall, and the deposition blocking ring 214 is overlapped on the fourth annular fold through the second annular fold at the top.

[0080] like Figure 7 As shown, the deposition preventing ring 214 and the bridge piece 218 may also be separate components, wherein the bottom of the deposition preventing ring 214 is provided with a stepped bridge portion that matches with the outer edge of the bridge piece 218 .

[0081] It should be noted that the process chamber of this embodiment also includes system components such as the radio frequency system and back-blowing gas pipeline that are the same as those in the existing copper reflow process chamber.

[0082] The working principle of the process chamber of this embodiment is:

[0083] like Figure 4 As shown, the base 202 rises to the first process position (deposition process position), and the deposition blocking ring 214 is supported by the base 202. At this time, the first opening 213 on the lower liner 212 and the second opening 215 on the deposition blocking ring 214 are staggered in height, which can ensure that the thin film deposited on the target material 205 will not be deposited on the chamber wall during the deposition process. Figure 5 As shown, the base 202 continues to rise to the second process position (reflow process position), at which time the first opening 213 on the lower liner 212 and the second opening 215 on the deposition blocking ring 214 are substantially aligned in height. The light emitted by the annular heating lamp tube 220 can penetrate the first opening 213 and the second opening 215 to irradiate the substrate on the base 202 under the action of the annular reflective component 223, thereby irradiating and heating the substrate to achieve the reflow process. Example 2

[0084] This embodiment provides a semiconductor process equipment, which includes the process chamber of Embodiment 1.

[0085] Since the semiconductor device adopts the process chamber of Example 1, it can effectively avoid the problems of substrate deviation, deformation, fragmentation, etc. caused by repeated adsorption-desorption and heating of the substrate during the reflow process. Example 3

[0086] like Figure 8 As shown, a process method using the semiconductor process equipment of embodiment 2 is performed, the method comprising:

[0087] S1: Control the susceptor 202 carrying the substrate to be processed to rise to the first process position;

[0088] S2: introducing a back-blowing gas between the susceptor 202 and the substrate to perform a first deposition process on the substrate;

[0089] S3: After the first deposition process is completed, the back-blowing gas between the susceptor 202 and the substrate is stopped;

[0090] S4: controlling the base 202 to rise to the second process position, irradiating and heating the substrate through the heating lamp assembly, and performing a reflow process;

[0091] S5: After the reflow process is completed, the pedestal 202 is controlled to descend to the first process position, the back-blowing gas is introduced between the pedestal 202 and the substrate again, and the substrate is subjected to a second deposition process;

[0092] S6: After the second deposition process is completed, the back-blowing gas between the susceptor 202 and the substrate is stopped.

[0093] Take the copper reflow process as an example. Fig. 9 As shown, the method of this embodiment specifically includes:

[0094] S101: transferring the substrate to the chamber;

[0095] S102: Control the base 202 to rise to the first process position;

[0096] S103: controlling the electrostatic chuck on the base 202 to electrostatically adsorb the substrate, and introducing back-blowing gas between the electrostatic chuck and the substrate;

[0097] S104: Start the first copper film deposition process. At this time, due to the back-blowing gas heat transfer between the substrate and the electrostatic chuck, the substrate can be kept at a low temperature during the deposition process.

[0098] S105: After the first deposition process is completed, the back-blowing gas is turned off, and the electrostatic chuck is still controlled to retain the voltage of electrostatic adsorption, so that the substrate is still tightly adsorbed on the surface of the electrostatic chuck. Since the back-blowing gas is turned off, there is almost no heat conduction between the substrate and the electrostatic chuck, and the electrostatic chuck has almost no cooling effect on the substrate.

[0099] S106: Control the base 202 to rise to the second process position;

[0100] S107: irradiating and heating the substrate by a heating lamp assembly to perform a copper reflow process;

[0101] When the base 202 drives the deposition blocking ring 214 to rise to the second process position, the second opening 215 on the deposition blocking ring 214 at least partially overlaps with the first opening 213 on the lower liner 212 in height, and the light of the annular heating lamp 200 can be irradiated onto the substrate to heat the substrate through the first opening 213 and the second opening 215. Preferably, the light of the annular heating lamp can be irradiated onto the upper surface of the substrate to heat it and complete the copper reflow process.

[0102] S108: After the copper reflow process is completed, back-blowing gas is introduced again between the base 202 and the substrate to cool the substrate.

[0103] S109: controlling the susceptor 202 to descend to the first process position (the order of step S108 and step S109 can be interchanged).

[0104] S110: performing a second copper thin film deposition process;

[0105] S111: After the second deposition process is completed, the back blowing gas between the pedestal 202 and the substrate is stopped.

[0106] S112: Control the base 202 to stop electrostatically adsorbing the substrate to complete de-chuck.

[0107] S113: Finally, the substrate is transferred out of the chamber to complete the copper reflow process.

[0108] The process method of this embodiment adopts the copper reflow process equipment of Example 2. Since the light of the annular heating lamp 220 can be irradiated to the surface of the substrate through the first opening 213 and the second opening 215 (for example, irradiating downward from the base 202 and the top of the substrate), there is no need to let the substrate leave the base 202 during the process, and no desorption step is required. Therefore, the residual suction caused by desorption and the risk of slippage caused by the ejector pin lifting the substrate can be avoided. During the reflow process, there is no need to let the substrate leave the base, which can effectively prevent the problem of position drift caused by the lifting and lowering of the substrate, and can also prevent the residual suction caused by multiple adsorption-desorption, thereby eliminating the risk of slippage and debris.

[0109] The embodiments of the present invention have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A process chamber for semiconductor process equipment, It is characterized in that include: A cavity, wherein an annular liner component is disposed in the cavity along the circumference of the inner wall of the cavity, a deposition blocking ring is disposed on the inner ring side of the liner component, and a base for carrying a substrate to be processed and capable of being raised and lowered is disposed at the bottom of the cavity; The lining component is provided with a plurality of first openings penetrating the side wall of the lining component along the circumferential direction of the lining component; the deposition blocking ring is provided with a plurality of second openings penetrating the side wall of the deposition blocking ring along the circumferential direction of the deposition blocking ring; and the inner side wall of the cavity is provided with a heating lamp assembly opposite to the plurality of first openings along the circumferential direction of the cavity; When the base drives the deposition blocking ring to rise to the first process position, the second opening and the first opening are staggered with each other; when the base drives the deposition blocking ring to rise to the second process position, the second opening and the first opening at least partially overlap, and the second process position is higher than the first process position.

2. The process chamber according to claim 1, It is characterized in that The lining assembly comprises an upper lining and a lower lining; the upper lining is arranged on the inner top of the cavity, and the lower lining is arranged below the upper lining; The lower liner includes a first cylindrical side wall and a second cylindrical side wall which are coaxially arranged, wherein the second cylindrical side wall is located below the first cylindrical side wall, the diameter of the second cylindrical side wall is smaller than the diameter of the first cylindrical side wall, and a plurality of the first openings are arranged on the second cylindrical side wall.

3. The process chamber according to claim 2, It is characterized in that A support is provided on the top of the side wall of the cavity, a first annular fold is provided on the top of the first cylindrical side wall which extends transversely, and the first cylindrical side wall is overlapped on the support through the first annular fold; The top of the side wall of the second cylinder is formed with an annular step; A second annular folding edge extending laterally is provided on the top of the deposition preventing ring, and the deposition preventing ring is overlapped on the annular step through the second annular folding edge.

4. The process chamber according to claim 3, It is characterized in that A third annular folded edge is provided at the bottom of the second cylindrical side wall and extends in a direction away from the inner wall of the cavity, and a distal end of the third annular folded edge has an annular convex edge extending upward; A lap joint is provided at the bottom of the deposition blocking ring. The lap joint comprises a transversely arranged annular plate. The lower surface of the annular plate is provided with an annular groove which overlaps and cooperates with the annular convex edge.

5. The process chamber according to claim 1, It is characterized in that The heating lamp assembly comprises an annular reflector and an annular heating lamp tube, wherein the annular reflector is arranged on the inner wall of the cavity along the circumference of the cavity, and the inner side wall of the annular reflector is an arc-shaped reflective surface facing the center of the cavity; The annular heating lamp tube is arranged on the arc-shaped reflecting surface through a plurality of supporting members.

6. The process chamber according to claim 2, It is characterized in that The first cylindrical side wall and the second cylindrical side wall are integrally formed; Alternatively, the first cylindrical side wall and the second cylindrical side wall are separate components, wherein the bottom of the first cylindrical side wall and the top of the second cylindrical side wall are provided with mutually matching transversely extending overlapping portions.

7. The process chamber according to claim 4, It is characterized in that The deposition blocking ring and the bridge piece are integrally formed; Alternatively, the deposition preventing ring and the bridging piece are separate components, wherein the bottom of the deposition preventing ring is provided with a stepped bridging portion cooperating with the outer edge of the bridging piece.

8. The process chamber according to claim 1, It is characterized in that The first opening and the second opening are both long rectangular through holes, and the interval between two adjacent first openings and the interval between two adjacent second openings is 10-30 mm.

9. A semiconductor process equipment, It is characterized in that A process chamber comprising any one of claims 1-8.

10. A process method using the semiconductor process equipment according to claim 9, It is characterized in that The process comprises: Controlling a susceptor carrying a substrate to be processed to rise to a first process position; Passing back-blowing gas between the susceptor and the substrate, and performing a first deposition process on the substrate; After the first deposition process is completed, the back-blowing gas between the pedestal and the substrate is stopped; Controlling the susceptor to rise to a second process position, and irradiating and heating the substrate by the heating lamp assembly to perform a reflow process; After the reflow process is completed, the susceptor is controlled to descend to the first process position, a back-blowing gas is introduced between the susceptor and the substrate again, and a second deposition process is performed on the substrate; After the second deposition process is completed, the back-blowing gas between the pedestal and the substrate is stopped.

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