Photoelectric detection substrate and preparation method thereof, and photoelectric detection device

Abstract

The present disclosure provides a photodetecting substrate, a manufacturing method thereof, and a photodetecting device. The photodetecting substrate comprises a glass substrate and an electronic device and an optical device disposed on the glass substrate, wherein the optical device is a Schottky photodiode. The Schottky photodiode comprises a first electrode, an ohmic contact layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the ohmic contact layer away from the glass substrate, and a second electrode disposed on the side of the intrinsic layer away from the glass substrate. The present disclosure effectively improves the performance of the photodiode and reduces the production cost by adopting the Schottky photodiode without a P layer.

Description

Technical Field

[0001] This article relates to, but is not limited to, the field of optoelectronic technology, specifically to a photoelectric detection substrate and its preparation method, and a photoelectric detection device. Background Technology

[0002] Photoelectric sensors are increasingly playing an important role in national economy and people's livelihood, with applications in fingerprint recognition, medical testing, and other fields. For example, fingerprint recognition in display devices (such as laptops, tablets, and mobile phones) uses photoelectric sensors to image the user's fingerprint by utilizing the refraction and reflection of light.

[0003] Currently, mass-produced optical fingerprint modules are single-finger silicon-based CMOS detectors. Due to limitations in semiconductor device manufacturing costs and process complexity, silicon-based CMOS fingerprint modules are difficult to develop for large-area under-display applications. Glass-based photodetector substrates, on the other hand, offer advantages such as large-area fabrication, simple processing, and low cost, making them promising candidates for fingerprint recognition in display devices.

[0004] Currently, glass-based photodetector substrates comprise multiple pixels forming a sensing array. Each pixel includes optical and electronic components. The optical components may include photodiodes (PDs), and the electronic components may include thin-film transistors (TFTs). The photodiode converts optical signals into electrical signals, which are then addressed and output by the TFT. However, in practical applications, photodiodes suffer from relatively low performance. Summary of the Invention

[0005] The following is an overview of the topics described in detail in this article.

[0006] The technical problem to be solved by this disclosure is to provide a photoelectric detection substrate and its preparation method, as well as a photoelectric detection device, to solve the problem of low performance of photodiodes in existing structures.

[0007] To address the aforementioned technical problems, this disclosure provides a photoelectric detection substrate, including a glass substrate and an electronic device and an optical device disposed on the glass substrate, wherein the optical device is a Schottky photodiode.

[0008] In an exemplary embodiment, the Schottky photodiode includes: a first electrode, an ohmic contact layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the ohmic contact layer away from the glass substrate, and a second electrode disposed on the side of the intrinsic layer away from the glass substrate; or, the Schottky photodiode includes: a first electrode, an intrinsic layer disposed on the side of the first electrode away from the glass substrate, an ohmic contact layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the ohmic contact layer away from the glass substrate.

[0009] In an exemplary embodiment, the Schottky photodiode includes: a first electrode, an ohmic contact layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the ohmic contact layer away from the glass substrate, a barrier layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the barrier layer away from the glass substrate; or, the Schottky photodiode includes: a first electrode, a barrier layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the barrier layer away from the glass substrate, an ohmic contact layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the ohmic contact layer away from the glass substrate.

[0010] In an exemplary embodiment, the Schottky photodiode includes: a first electrode, a first barrier layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the first barrier layer away from the glass substrate, a second barrier layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the second barrier layer away from the glass substrate.

[0011] In an exemplary embodiment, the material of the first electrode includes molybdenum, aluminum, copper, lead, or gold; the material of the second electrode includes indium tin oxide or indium zinc oxide; the material of the ohmic contact layer includes N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy; and the material of the intrinsic layer includes amorphous silicon, microcrystalline silicon, or silicon-germanium alloy.

[0012] In an exemplary embodiment, the material of the barrier layer includes silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide.

[0013] In an exemplary embodiment, the thickness of the barrier layer is 1 nm to 5 nm.

[0014] In an exemplary embodiment, the electronic device includes an oxide thin-film transistor.

[0015] This disclosure also provides a photoelectric detection device, including the aforementioned photoelectric detection substrate.

[0016] This disclosure also provides a method for fabricating a photoelectric detection substrate, including:

[0017] An electronic device and an optical device are formed on a glass substrate; the optical device is a Schottky photodiode.

[0018] In an exemplary embodiment, a Schottky photodiode is formed on a glass substrate, including:

[0019] A first electrode is formed; an ohmic contact layer, an intrinsic layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, and the second electrode is disposed on the side of the intrinsic layer away from the glass substrate; or,

[0020] A first electrode is formed; an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the intrinsic layer is disposed on the side of the first electrode away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

[0021] In an exemplary embodiment, a Schottky photodiode is formed on a glass substrate, including:

[0022] A first electrode is formed; an ohmic contact layer, an intrinsic layer, a barrier layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, the barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the barrier layer away from the glass substrate; or,

[0023] A first electrode is formed; a barrier layer, an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the barrier layer away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

[0024] In an exemplary embodiment, a Schottky photodiode is formed on a glass substrate, including:

[0025] A first electrode is formed; a first barrier layer, an intrinsic layer, a second barrier layer, and a second electrode are formed sequentially; the first barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the first barrier layer away from the glass substrate, the second barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the second barrier layer away from the glass substrate.

[0026] In an exemplary embodiment, the material of the first electrode includes molybdenum, aluminum, copper, lead, or gold; the material of the second electrode includes indium tin oxide or indium zinc oxide; the material of the ohmic contact layer includes N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy; and the material of the intrinsic layer includes amorphous silicon, microcrystalline silicon, or silicon-germanium alloy.

[0027] In an exemplary embodiment, the material of the barrier layer includes silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, and it is deposited using plasma-enhanced chemical vapor deposition, atomic layer deposition, thermal oxidation, or chemical oxidation. The thickness of the barrier layer is 1 nm to 5 nm.

[0028] The photodetector substrate, its fabrication method, and the photodetector device provided in this exemplary embodiment effectively improve the performance of the photodiode and reduce production costs by employing a Schottky photodiode without a P-layer. Since the photodiode lacks a P-layer, it avoids light absorption by the P-layer, especially absorption of short-wavelength light, reducing light loss and effectively improving the photodiode's performance. Furthermore, the absence of a P-layer avoids chamber contamination caused by the P-layer fabrication process, preventing subsequent doping of amorphous silicon and ensuring photodiode performance. It also eliminates the need for frequent chamber cleaning processes, improving production efficiency and reducing production costs.

[0029] After reading and understanding the accompanying diagrams and detailed descriptions, other aspects can be understood. Attached Figure Description

[0030] The accompanying drawings are used to provide an understanding of the technical solutions of this application and constitute a part of the specification. They are used together with the embodiments of this application to explain the technical solutions of this application and do not constitute a limitation on the technical solutions of this application.

[0031] Figure 1 This is a schematic diagram of the structure of a photoelectric detection substrate, which is an exemplary embodiment of the present disclosure.

[0032] Figure 2 This is a schematic diagram showing the formation of the first metal layer pattern according to an exemplary embodiment of the present disclosure;

[0033] Figure 3 This is a schematic diagram showing the semiconductor layer pattern formed according to an exemplary embodiment of the present disclosure;

[0034] Figure 4 This is a schematic diagram showing the formation of the second metal layer pattern according to an exemplary embodiment of the present disclosure;

[0035] Figure 5 This is a schematic diagram showing the formation of the second insulating layer pattern according to an exemplary embodiment of the present disclosure;

[0036] Figure 6 This is a schematic diagram showing the formation of the third metal layer pattern according to an exemplary embodiment of the present disclosure;

[0037] Figure 7 A schematic diagram showing the formation of a photodiode pattern according to an exemplary embodiment of this disclosure;

[0038] Figure 8 A schematic diagram showing the formation of the third insulating layer and planarization layer pattern according to an exemplary embodiment of the present disclosure;

[0039] Figure 9 A schematic diagram showing the formation of the fourth insulating layer pattern according to an exemplary embodiment of this disclosure;

[0040] Figure 10 This is a schematic diagram of the structure of another photoelectric detection substrate as an exemplary embodiment of the present disclosure;

[0041] Figure 11 This is a schematic diagram of the structure of another photoelectric detection substrate according to an exemplary embodiment of the present disclosure;

[0042] Figure 12 This is a schematic diagram of the structure of another photoelectric detection substrate according to an exemplary embodiment of the present disclosure;

[0043] Figure 13 This is a schematic diagram of the structure of another photoelectric detection substrate according to an exemplary embodiment of the present disclosure;

[0044] Figure 14 This is a schematic diagram of carrier transport in a MIS structure.

[0045] Figure 15 A comparison diagram of oxygen content in MIS and Schottky structures;

[0046] Figure 16 This is a comparison diagram of leakage current for MIS and Schottky structures.

[0047] Explanation of reference numerals in the attached figures:

[0048] Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of this disclosure clearer, embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. Note that the implementation methods can be carried out in many different forms. Those skilled in the art will readily understand that the methods and content can be varied in various forms without departing from the spirit and scope of this disclosure. Therefore, this disclosure should not be construed as limited to the content described in the following embodiments. Without conflict, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0050] In the accompanying drawings, the size of the constituent elements, the thickness of the layers, or the area are sometimes exaggerated for clarity. Therefore, one aspect of this disclosure is not necessarily limited to these dimensions, and the shapes and sizes of the components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate ideal examples, and one aspect of this disclosure is not limited to the shapes or values ​​shown in the drawings.

[0051] The ordinal numbers “first,” “second,” and “third” used in this specification are used to avoid confusion among the constituent elements, not to limit their quantity.

[0052] In this specification, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification, and does not imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the orientation of each constituent element being described. Therefore, the use of terms not limited to those described in the specification may be appropriately replaced as needed.

[0053] In this specification, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they may refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection, an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art will understand the specific meaning of these terms in this disclosure based on the specific circumstances.

[0054] In this specification, a transistor is a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain electrode) and the source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, the channel region refers to the region through which current primarily flows.

[0055] In this specification, the first electrode can be the drain electrode and the second electrode can be the source electrode, or vice versa. In cases where transistors with opposite polarities are used or the current direction changes during circuit operation, the functions of the "source electrode" and "drain electrode" may sometimes be interchanged. Therefore, in this specification, the "source electrode" and "drain electrode" can be interchanged.

[0056] In this specification, "electrical connection" includes the situation where components are connected together by elements that have a certain electrical function. There are no particular limitations on what constitutes an "electrical function," as long as it allows for the transmission and reception of electrical signals between the connected components. Examples of "electrical functions" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements with various functions.

[0057] In this specification, "parallel" refers to the state where the angle formed by two straight lines is greater than or equal to -10° and less than 10°, and therefore also includes the state where the angle is greater than or equal to -5° and less than 5°. Similarly, "perpendicular" refers to the state where the angle formed by two straight lines is greater than or equal to 80° and less than 100°, and therefore also includes the state where the angle is greater than or equal to 85° and less than 95°.

[0058] In this specification, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may sometimes be replaced with "conductive film." Similarly, "insulating film" may sometimes be replaced with "insulating layer."

[0059] In this disclosure, “about” means a value that is not strictly limited and allows for process and measurement errors.

[0060] The inventors of this application have discovered that the existing structure suffers from low photodiode performance, a problem caused by the photodiode's structure. In existing glass-based photodetector substrates, photodiodes typically employ PIN photodiodes, comprising a P-type semiconductor (P layer), an N-type semiconductor (N layer), and an intrinsic semiconductor sandwiched between them. Because the P layer in a PIN photodiode absorbs some light, especially short-wavelength light, it causes significant absorption loss, thus reducing the photodiode's performance. Further research by the inventors revealed that the formation of the P layer in the fabrication of PIN photodiodes requires a diborane (B₂H₆) process. Boron (B) ions generated during this process remain in the cavity, causing doping of the subsequently formed amorphous silicon and further reducing the photodiode's performance. While cleaning the cavity can mitigate the B ion residue problem, frequent cavity cleaning affects production capacity, reduces production efficiency, and increases production costs.

[0061] To address the issue of low performance of photodiodes in existing structures, this disclosure provides a photodetector substrate. In an exemplary embodiment, the photodetector substrate may include a glass substrate and electronic and optical devices disposed on the glass substrate, wherein the optical device is a Schottky photodiode without a P-layer.

[0062] Figure 1 This is a schematic diagram of the structure of a photoelectric detection substrate, which is an exemplary embodiment of this disclosure. Figure 1As shown, the photodetector substrate includes a glass substrate 10 and optical and electronic devices disposed on the glass substrate 10. In an exemplary embodiment, the optical device may be a Schottky photodiode without a P-layer, and the electronic device may be a thin-film transistor. The Schottky photodiode may include a first electrode 31, an ohmic contact layer 32, an intrinsic layer 33, and a second electrode 34 disposed sequentially along a direction perpendicular to the glass substrate. The ohmic contact layer 32 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the ohmic contact layer 32 away from the glass substrate, and the second electrode 34 is disposed on the side of the intrinsic layer 33 away from the glass substrate.

[0063] In an exemplary embodiment, the first electrode 31 may be made of a high work function metal material, such as molybdenum, aluminum, copper, lead, or gold; the ohmic contact layer 32 may be made of an N-type doped silicon-based semiconductor, such as N-type doped amorphous silicon, doped microcrystalline silicon, or doped silicon-germanium alloy; the intrinsic layer 33 may be made of amorphous silicon, microcrystalline silicon, or silicon-germanium alloy; and the second electrode 34 may be made of a high work function metal oxide transparent conductive material. The thin-film transistor may include a gate electrode 21, an active layer 22, a source electrode 23, and a drain electrode 24. The source electrode 23 and drain electrode 24 are respectively connected to the active layer 22, which may be made of an oxide.

[0064] In an exemplary embodiment, the photodetector substrate further includes a first insulating layer 11, a second insulating layer 12, a third insulating layer 13, and a planarization layer 14. The first insulating layer 11 covers the gate electrode 21 of the thin-film transistor. The active layer 22, source electrode 23, and drain electrode 24 of the thin-film transistor are disposed on the first insulating layer 11. The second insulating layer 12 covers the thin-film transistor and has a first opening that exposes the drain electrode 24. The first electrode 31 of the photodiode is disposed on the second insulating layer 12 and is connected to the drain electrode 24 of the thin-film transistor through the first opening. An ohmic contact layer 32 is disposed on the first electrode 31. An intrinsic layer 33 is disposed on the ohmic contact layer 32. A second electrode 34 is disposed on the intrinsic layer 33. The third insulating layer 13 covers the first electrode 31, the ohmic contact layer 32, the intrinsic layer 33, and the second electrode 34 of the photodiode. The planarization layer 14 covers the third insulating layer 13 and has a second opening that exposes the second electrode 34.

[0065] In an exemplary embodiment, the photodetector substrate further includes an electrode lead 41, which is disposed on the planarization layer 14 and connected to the second electrode 34 through a second opening.

[0066] In an exemplary embodiment, the photodetector substrate further includes a fourth insulating layer 15, which covers the electrode lead 41.

[0067] In an exemplary embodiment, the ohmic contact layer 32, the intrinsic layer 33, and the second electrode 34 of the photodiode can be formed simultaneously in the same patterning process.

[0068] The following is an illustrative description of the fabrication process of a photodetector substrate. The "patterning process" described in this disclosure includes, for metallic, inorganic, or transparent conductive materials, processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping; for organic materials, it includes processes such as organic material coating, mask exposure, and development. Deposition can be performed using any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed using any one or more of spraying, spin coating, and inkjet printing; etching can be performed using any one or more of dry etching and wet etching. This disclosure does not limit the methods used. A "thin film" refers to a thin film made of a material on a substrate using deposition, coating, or other processes. If the "thin film" does not require a patterning process during the entire fabrication process, it can also be called a "layer." If the "thin film" requires a patterning process during the entire fabrication process, it is called a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern." The phrase "A and B are arranged in the same layer" in this disclosure means that A and B are formed simultaneously through the same patterning process, and the "thickness" of the film layer is the dimension of the film layer in the direction perpendicular to the display substrate. In the exemplary embodiments of this disclosure, "the orthographic projection of A includes the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary range of the orthographic projection of A, or the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0069] In an exemplary embodiment, the fabrication process of the photodetector substrate may include the following operations.

[0070] (1) Forming a first metal layer pattern. In an exemplary embodiment, forming a first metal layer pattern may include: depositing a first metal thin film on a glass substrate, and patterning the first metal thin film using a patterning process to form a first metal layer pattern, wherein the first metal layer pattern includes at least a gate electrode 21, such as... Figure 2 As shown.

[0071] In an exemplary embodiment, the first metal layer pattern may include scan signal lines, and the gate electrode may be an integral structure interconnected with the scan signal lines.

[0072] In an exemplary embodiment, the glass substrate may be made of materials such as glass or quartz.

[0073] (2) Forming a semiconductor layer pattern. In an exemplary embodiment, forming a semiconductor layer pattern may include: sequentially depositing a first insulating film and a semiconductor thin film on a glass substrate on which the aforementioned pattern is formed; patterning the semiconductor thin film using a patterning process to form a first insulating layer 11 covering the first metal layer pattern; and a semiconductor layer pattern disposed on the first insulating layer 11, wherein the semiconductor layer pattern includes at least an active layer 22, such as... Figure 3 As shown.

[0074] In an exemplary embodiment, the semiconductor thin film may be an oxide, and the formed active layer is an oxide active layer to form an oxide thin film transistor.

[0075] In exemplary embodiments, the semiconductor thin film may also be made of amorphous silicon or polycrystalline silicon, and this disclosure does not limit it.

[0076] (3) Forming a second metal layer pattern. In an exemplary embodiment, forming a second metal layer pattern may include: depositing a second metal thin film on the glass substrate on which the aforementioned pattern is formed, and patterning the second metal thin film using a patterning process to form a second metal layer pattern. The second metal layer pattern includes at least a source electrode 23 and a drain electrode 24, with the ends of the source electrode 23 and the drain electrode 24 close to each other respectively disposed on the active layer 22, and a conductive channel formed between the source electrode 23 and the drain electrode 24, such as... Figure 4 As shown.

[0077] In an exemplary embodiment, the second metal layer pattern may include data signal lines, and the source electrode may be an integral structure interconnected with the data signal lines.

[0078] In an exemplary embodiment, the drain electrode 24 may extend into the photodiode region to facilitate connection with the first electrode of a subsequently formed photodiode.

[0079] Thus, a thin-film transistor serving as a switching device in a photodetector substrate is formed on the glass substrate. The thin-film transistor with a bottom gate structure may include a gate electrode 21, an active layer 22, a source electrode 23, and a drain electrode 24.

[0080] (4) Forming a second insulating layer pattern. In an exemplary embodiment, forming a second insulating layer pattern may include: depositing a second insulating film on the glass substrate on which the aforementioned pattern is formed, patterning the second insulating film using a patterning process to form a second insulating layer 12 pattern covering the second metal layer pattern, wherein a first opening K1 is formed on the second insulating layer 12, and the second insulating layer 12 in the first opening K1 is etched away to expose a portion of the surface of the drain electrode 24, such as... Figure 5 As shown.

[0081] In an exemplary embodiment, the first opening K1 is configured to allow the first electrode of a subsequently formed photodiode to be connected to the drain electrode of a thin-film transistor through the opening.

[0082] (5) Forming a third metal layer pattern. In an exemplary embodiment, forming a third metal layer pattern may include: depositing a third metal thin film on the glass substrate on which the aforementioned pattern is formed, and patterning the third metal thin film using a patterning process to form a third metal layer pattern. The third metal layer pattern includes at least a first electrode 31, which is connected to the drain electrode 24 through a first opening K1, such as... Figure 6 As shown.

[0083] In an exemplary embodiment, the first electrode may be a high work function metal, such as molybdenum (Mo), aluminum (Al), copper (Au), lead (Pb), or gold (Au).

[0084] (6) Forming a photodiode pattern. In an exemplary embodiment, forming a photodiode pattern may include: sequentially forming a doped thin film, an intrinsic thin film, and a conductive thin film on a glass substrate on which the aforementioned pattern is formed; patterning the conductive thin film, the intrinsic thin film, and the doped thin film using a patterning process to form a stacked ohmic contact layer 32, an intrinsic layer 33, and a second electrode 34. The ohmic contact layer 32 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the ohmic contact layer 32 away from the glass substrate, and the second electrode 34 is disposed on the side of the intrinsic layer 33 away from the glass substrate. Figure 7 As shown.

[0085] In an exemplary embodiment, forming a doped thin film can be achieved by first depositing a silicon-based semiconductor such as amorphous silicon, microcrystalline silicon, or silicon-germanium alloy, and then forming the doped thin film through a doping process. In an exemplary embodiment, the doping process can be performed using N-type ion implantation, and the formed ohmic contact layer 32 can be an N-type doped silicon-based semiconductor such as N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy.

[0086] In an exemplary embodiment, the intrinsic thin film can be made of silicon-based semiconductors such as amorphous silicon, microcrystalline silicon, or silicon-germanium alloy, and the conductive thin film can be made of a high work function metal oxide transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0087] Thus, a Schottky photodiode, serving as an optical device in a photodetector substrate, is formed on a glass substrate. The photodiode includes a first electrode 31, an ohmic contact layer 32, an intrinsic layer 33, and a second electrode 34 arranged sequentially along a direction perpendicular to the glass substrate. The ohmic contact layer 32 is disposed on the side of the first electrode 31 away from the glass substrate and is connected to the first electrode 31. The intrinsic layer 33 is disposed on the side of the ohmic contact layer 32 away from the glass substrate and is connected to the ohmic contact layer 32. The second electrode 34 is disposed on the side of the intrinsic layer 33 away from the glass substrate and is connected to the intrinsic layer 33.

[0088] A Schottky barrier diode is a metal-semiconductor device in which a Schottky barrier is formed between an N-type semiconductor and a metal. In an exemplary embodiment of this disclosure, since the intrinsic layer of the amorphous silicon is weakly N-type and the second electrode is a metal oxide, a Schottky contact, i.e., a Schottky junction, is formed between the second electrode and the intrinsic layer, and the photodiode is a Schottky photodiode.

[0089] (7) Forming a third insulating layer and a planarization layer pattern. In an exemplary embodiment, forming the third insulating layer and planarization layer pattern may include: depositing a third insulating film on a glass substrate on which the aforementioned pattern is formed, then coating a planarization film, and patterning the planarization film and the third insulating film using a patterning process to form a third insulating layer 13 covering the photodiode and a planarization layer 14 covering the third insulating layer 13. A second opening K2 is provided on the third insulating layer 13 and the planarization layer 14. The planarization film and the third insulating film within the second opening K2 are removed to expose the surface of the second electrode 34, such as... Figure 8 As shown.

[0090] In an exemplary embodiment, the third insulating layer 13 is configured to protect the sidewalls of the photodiode, and the planarization layer 14 is configured to form a flush surface.

[0091] (8) Forming a fourth metal layer pattern. In an exemplary embodiment, forming a fourth metal layer pattern may include: depositing a fourth metal thin film on the glass substrate on which the aforementioned pattern is formed, patterning the fourth metal thin film using a patterning process, forming a fourth metal layer pattern on the planarization layer 14, wherein the fourth metal layer pattern includes at least an electrode lead 41, and the electrode lead 41 is connected to the second electrode 34 through the second opening K2, such as... Figure 9 As shown.

[0092] (9) Forming a fourth insulating layer pattern. In an exemplary embodiment, forming a fourth insulating layer pattern may include: depositing a fourth insulating film on the glass substrate on which the aforementioned pattern is formed to form a fourth insulating layer 15 covering the aforementioned structure, such as... Figure 1 As shown.

[0093] In an exemplary embodiment, the fourth insulating layer 15 is configured to protect the photodetector substrate and may be referred to as an insulating protective layer.

[0094] Thus, the fabrication of the photodetector substrate of the exemplary embodiment of this disclosure is completed. The photodetector substrate includes an oxide thin-film transistor and a Schottky photodiode. The oxide thin-film transistor acts as a switching device to control the readout of electrical signals in the photodiode, and the Schottky photodiode acts as an optical device to perform photoelectric conversion on incident light.

[0095] In an exemplary embodiment, the first, second, third, and fourth insulating layers can be any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), and can be single-layer, multi-layer, or composite layers. The planarization layer can be an organic material, such as resin. The first and second metal films can be metallic materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or alloys of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and can be single-layer structures or multi-layer composite structures, such as Ti / Al / Ti.

[0096] As can be seen from the structure and fabrication process of the photodetector substrate described above, the photodetector substrate provided in the exemplary embodiments of this disclosure uses a P-layer-free Schottky photodiode, which effectively improves the performance of the photodiode and reduces production costs. Since the photodiode lacks a P-layer, it avoids the absorption of light by the P-layer, especially the absorption of short-wavelength light, reducing light loss and effectively improving the performance of the photodiode. Because the photodiode lacks a P-layer, it avoids chamber contamination caused by the P-layer fabrication process, preventing subsequent doping of amorphous silicon and ensuring the performance of the photodiode. It also eliminates the need for frequent chamber cleaning processes, improving production efficiency and reducing production costs. Furthermore, since the photodiode lacks a P-layer, its fabrication does not require a P-doping process. Therefore, oxide thin-film transistors can be used, which not only have advantages such as low leakage current and high mobility, but also can directly utilize the fabrication process and equipment for oxide thin-film transistors without modification. This ensures good compatibility with existing fabrication processes, resulting in high production efficiency, low production costs, and high yield.

[0097] Figure 10 This is a schematic diagram of another photodetector substrate structure, illustrating an exemplary embodiment of the present disclosure. In this exemplary embodiment, the photodetector substrate includes a Schottky photodiode and a thin-film transistor disposed on a glass substrate 10. The thin-film transistor structure can be the same as in the aforementioned embodiments. Figure 10As shown, a Schottky photodiode may include a first electrode 31, an intrinsic layer 33, an ohmic contact layer 32, and a second electrode 34 arranged sequentially along a direction perpendicular to the glass substrate. The intrinsic layer 33 is disposed on the side of the first electrode 31 away from the glass substrate, the ohmic contact layer 32 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the ohmic contact layer 32 away from the glass substrate.

[0098] In an exemplary embodiment, the materials of the first electrode 31, the ohmic contact layer 32, the intrinsic layer 33, and the second electrode 34 can be the same as those in the aforementioned embodiments, and the intrinsic layer 33, the ohmic contact layer 32, and the second electrode 34 of the photodiode can be formed simultaneously in the same patterning process.

[0099] The fabrication process of the photodetector substrate in this exemplary embodiment is basically similar to that in the previous embodiment. The difference is that, in forming the photodiode pattern, an intrinsic thin film, a doped thin film, and a conductive thin film are deposited sequentially. The conductive thin film, the doped thin film, and the intrinsic thin film are patterned by a patterning process to form a stacked intrinsic layer 33, an ohmic contact layer 32, and a second electrode 34. The intrinsic layer 33 is disposed on the side of the first electrode 31 away from the glass substrate, the ohmic contact layer 32 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the ohmic contact layer 32 away from the glass substrate.

[0100] In an exemplary embodiment of this disclosure, since the intrinsic layer of amorphous silicon is weakly N-type and the first electrode is a high work function metal, such as molybdenum or gold, a Schottky contact is formed between the first electrode and the intrinsic layer, and the photodiode is a Schottky photodiode.

[0101] This exemplary embodiment of the photodetector substrate uses a Schottky photodiode without a P-layer, which effectively improves the performance of the photodiode and reduces production costs.

[0102] Figure 11 This is a schematic diagram of another photodetector substrate according to an exemplary embodiment of the present disclosure. In this exemplary embodiment, the photodetector substrate includes a Schottky photodiode and a thin-film transistor disposed on a glass substrate 10. The thin-film transistor structure can be the same as in the aforementioned embodiments. Figure 11 As shown, a Schottky photodiode may include a first electrode 31, an ohmic contact layer 32, an intrinsic layer 33, a barrier layer 35, and a second electrode 34 arranged sequentially along a direction perpendicular to the glass substrate. The ohmic contact layer 32 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the ohmic contact layer 32 away from the glass substrate, the barrier layer 35 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the barrier layer 35 away from the glass substrate.

[0103] In an exemplary embodiment, the materials of the first electrode 31, the ohmic contact layer 32, the intrinsic layer 33, and the second electrode 34 can be the same as those in the aforementioned embodiments. The barrier layer 35 can be an insulating layer in a semiconductor process, including any one or more of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), and aluminum oxide (Al2O3), and can be a single layer, multiple layers, or a composite layer.

[0104] In an exemplary embodiment, the thickness of the barrier layer 35 can be approximately 1 nm to 5 nm.

[0105] In an exemplary embodiment, the ohmic contact layer 32, intrinsic layer 33, barrier layer 35, and second electrode 34 of the photodiode can be formed simultaneously in the same patterning process.

[0106] The fabrication process of the photodetector substrate in this exemplary embodiment is basically similar to that in the previous embodiment. The difference is that, in forming the photodiode pattern, a doped thin film, an intrinsic thin film, a barrier thin film, and a conductive thin film are deposited sequentially. The conductive thin film, the barrier thin film, the intrinsic thin film, and the doped thin film are patterned by a patterning process to form a stacked ohmic contact layer 32, an intrinsic layer 33, a barrier layer 35, and a second electrode 34. The ohmic contact layer 32 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the ohmic contact layer 32 away from the glass substrate, the barrier layer 35 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the barrier layer 35 away from the glass substrate.

[0107] In an exemplary embodiment, the barrier layer may be deposited using methods such as plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), thermal oxidation, or chemical oxidation.

[0108] This exemplary embodiment of the photodetector substrate not only employs a P-layer-free Schottky photodiode, effectively improving photodiode performance and reducing production costs, but also forms a metal oxide-barrier-semiconductor (MIS) structure by setting a barrier layer in the Schottky photodiode. This barrier layer is positioned between the intrinsic layer of amorphous silicon and the second electrode of a transparent conductive metal oxide material. The MIS structure suppresses interface diffusion, reduces amorphous silicon interface and bulk defects, suppresses thermally assisted carrier tunneling, and lowers dark-state current, thus reducing noise. Furthermore, by depositing the barrier layer before the metal oxide, atomic diffusion during the metal oxide deposition process can be avoided, further suppressing interface diffusion and reducing amorphous silicon interface and bulk defects.

[0109] Figure 12This is a schematic diagram of another photodetector substrate according to an exemplary embodiment of the present disclosure. In this exemplary embodiment, the photodetector substrate includes a Schottky photodiode and a thin-film transistor disposed on a glass substrate 10. The thin-film transistor structure can be the same as in the aforementioned embodiments. Figure 12 As shown, a Schottky photodiode may include a first electrode 31, a barrier layer 35, an intrinsic layer 33, an ohmic contact layer 32, and a second electrode 34 arranged sequentially along a direction perpendicular to the glass substrate. The barrier layer 35 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the barrier layer 35 away from the glass substrate, the ohmic contact layer 32 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the ohmic contact layer 32 away from the glass substrate.

[0110] In an exemplary embodiment, the materials of the first electrode 31, the ohmic contact layer 32, the intrinsic layer 33, and the second electrode 34 can be the same as those in the aforementioned embodiments. The barrier layer 35 can be any one or more of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), and aluminum oxide (Al2O3), and can be a single layer, multiple layers, or a composite layer.

[0111] In an exemplary embodiment, the thickness of the barrier layer 35 can be approximately 1 nm to 5 nm.

[0112] In an exemplary embodiment, the blocking layer 35, intrinsic layer 33, ohmic contact layer 32, and second electrode 34 of the photodiode can be formed simultaneously in the same patterning process.

[0113] The fabrication process of the photodetector substrate in this exemplary embodiment is basically similar to that in the previous embodiment. The difference is that, in forming the photodiode pattern, a barrier film, an intrinsic film, a doped film, and a conductive film are deposited sequentially. The conductive film, the doped film, the intrinsic film, and the barrier film are patterned by a patterning process to form a stacked barrier layer 35, an intrinsic layer 33, an ohmic contact layer 32, and a second electrode 34. The barrier layer 35 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the barrier layer 35 away from the glass substrate, the ohmic contact layer 32 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the ohmic contact layer 32 away from the glass substrate.

[0114] This exemplary embodiment of the photodetector substrate not only employs a P-layer-free Schottky photodiode, effectively improving its performance and reducing production costs, but also utilizes a barrier layer within the Schottky photodiode. This barrier layer is positioned between the first electrode 31 made of metal and the intrinsic layer 33 made of amorphous silicon, forming a metal-insulator-semiconductor (MIS) structure. The MIS structure improves interface diffusion, reduces interface and bulk defects in the amorphous silicon, suppresses carrier tunneling, and lowers dark-state current, thus reducing noise. Furthermore, by depositing the barrier layer before the amorphous silicon, atomic diffusion of the metal can be avoided, further suppressing interface diffusion and reducing interface and bulk defects in the amorphous silicon.

[0115] Figure 13 This is a schematic diagram of another photodetector substrate according to an exemplary embodiment of the present disclosure. In this exemplary embodiment, the photodetector substrate includes a Schottky photodiode and a thin-film transistor disposed on a glass substrate 10. The thin-film transistor structure can be the same as in the aforementioned embodiments. Figure 13 As shown, a Schottky photodiode may include a first electrode 31, a first barrier layer 35-1, an intrinsic layer 33, a second barrier layer 35-2, and a second electrode 34 arranged sequentially along a direction perpendicular to the glass substrate. The first barrier layer 35-1 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the first barrier layer 35-1 away from the glass substrate, the second barrier layer 35-2 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the second barrier layer 35-2 away from the glass substrate. That is, the first barrier layer 35-1 is disposed between the first electrode 31 and the intrinsic layer 33, and the second barrier layer 35-2 is disposed between the intrinsic layer 33 and the second electrode 34.

[0116] In an exemplary embodiment, the materials of the first electrode 31, the intrinsic layer 33, and the second electrode 34 can be the same as those in the aforementioned embodiments. The barrier layer 35 can be any one or more of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), and aluminum oxide (Al2O3), and can be a single layer, multiple layers, or a composite layer.

[0117] In an exemplary embodiment, the thickness of the first barrier layer 35-1 and the second barrier layer 35-2 can be approximately 1 nm to 5 nm, respectively.

[0118] In an exemplary embodiment, the first barrier layer 35-1, the intrinsic layer 33, the second barrier layer 35-2, and the second electrode 34 of the photodiode can be formed simultaneously in the same patterning process.

[0119] The fabrication process of the photodetector substrate in this exemplary embodiment is basically similar to that in the previous embodiment. The difference is that, in forming the photodiode pattern, a first barrier film, an intrinsic film, a second barrier film, and a conductive film are deposited sequentially. The conductive film, the second barrier film, the intrinsic film, and the first barrier film are patterned by a patterning process to form a stacked first barrier layer 35-1, an intrinsic layer 33, a second barrier layer 35-2, and a second electrode 34. The first barrier layer 35-1 is disposed on the side of the first electrode 31 away from the glass substrate, the intrinsic layer 33 is disposed on the side of the first barrier layer 35-1 away from the glass substrate, the second barrier layer 35-2 is disposed on the side of the intrinsic layer 33 away from the glass substrate, and the second electrode 34 is disposed on the side of the second barrier layer 35-2 away from the glass substrate.

[0120] This exemplary embodiment of the photodetector substrate not only employs a P-layer-free Schottky photodiode, effectively improving photodiode performance and reducing production costs, but also incorporates barrier layers within the Schottky photodiode. A first barrier layer is positioned between the first electrode 31 of the metal material and the intrinsic layer 33 of the amorphous silicon material, forming a metal-insulator-semiconductor structure. A second barrier layer 35-2 is positioned between the intrinsic layer of the amorphous silicon material and the second electrode of the metal oxide transparent conductive material, forming a metal oxide-barrier layer-semiconductor structure. This MIS structure improves interface diffusion, reduces amorphous silicon interface and bulk defects, suppresses carrier tunneling, reduces dark-state current, and helps reduce noise. Furthermore, by depositing the first barrier layer before depositing the amorphous silicon, atomic diffusion of the metal can be avoided. Similarly, by depositing the second barrier layer before depositing the metal oxide, atomic diffusion during the metal oxide deposition process can be avoided, further suppressing interface diffusion and reducing amorphous silicon interface and bulk defects.

[0121] Figure 14 This is a schematic diagram of carrier transport in a MIS structure. E in the diagram... Fm For the Fermi level of the second electrode (ITO), E Fs For the Fermi level of the intrinsic layer (amorphous silicon), E C For the conduction band of the intrinsic layer, E V V is the valence band of the intrinsic layer. d Here, χ represents the built-in electric field bias, Φi represents the electron affinity potential, and Φi represents the potential barrier. For example... Figure 14 As shown, by setting a barrier layer between the intrinsic layer and the second electrode, the barrier height can be significantly increased. Electrons need to tunnel through the insulating layer into the amorphous silicon layer, while suppressing thermal excitation affected by the Schottky barrier and thermally assisted tunneling caused by defects at the amorphous silicon interface, thus achieving the effect of reducing dark state current.

[0122] Figure 15This is a comparison of the oxygen content of the MIS structure and the Schottky structure. Experimental results show that, due to the barrier layer placed between the intrinsic layer and the second electrode, the oxygen content in the intrinsic layer is significantly reduced, effectively decreasing interface and bulk defects in the intrinsic layer. Figure 15 As shown.

[0123] Figure 16 This is a comparison of leakage current between the MIS structure and the Schottky structure. Experimental results show that by placing a barrier layer between the intrinsic layer and the second electrode, the leakage current is significantly reduced. Furthermore, increasing the thickness of the barrier layer can further reduce the leakage current, but the reduction is not substantial. Figure 16 As shown.

[0124] This disclosure also provides a method for fabricating a photodetector substrate, used to prepare the photodetector substrate of the aforementioned exemplary embodiments. In an exemplary embodiment, the method for fabricating the photodetector substrate may include:

[0125] An electronic device and an optical device are formed on a glass substrate; the optical device is a Schottky photodiode.

[0126] In an exemplary embodiment, forming a Schottky photodiode on a glass substrate may include:

[0127] A first electrode is formed; an ohmic contact layer, an intrinsic layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, and the second electrode is disposed on the side of the intrinsic layer away from the glass substrate.

[0128] In an exemplary embodiment, forming a Schottky photodiode on a glass substrate may include:

[0129] A first electrode is formed; an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the intrinsic layer is disposed on the side of the first electrode away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

[0130] In an exemplary embodiment, forming a Schottky photodiode on a glass substrate may include:

[0131] A first electrode is formed; an ohmic contact layer, an intrinsic layer, a barrier layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, the barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the barrier layer away from the glass substrate.

[0132] In an exemplary embodiment, forming a Schottky photodiode on a glass substrate may include:

[0133] A first electrode is formed; a barrier layer, an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the barrier layer away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

[0134] In an exemplary embodiment, forming a Schottky photodiode on a glass substrate may include:

[0135] A first electrode is formed; a first barrier layer, an intrinsic layer, a second barrier layer, and a second electrode are formed sequentially; the first barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the first barrier layer away from the glass substrate, the second barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the second barrier layer away from the glass substrate.

[0136] In an exemplary embodiment, the material of the first electrode includes molybdenum, aluminum, copper, lead, or gold; the material of the second electrode includes indium tin oxide or indium zinc oxide; the material of the ohmic contact layer includes N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy; and the material of the intrinsic layer includes amorphous silicon, microcrystalline silicon, or silicon-germanium alloy.

[0137] In an exemplary embodiment, the material of the barrier layer includes silicon oxide, silicon nitride, or silicon oxynitride, and the thickness of the barrier layer is 1 nm to 5 nm.

[0138] In an exemplary embodiment, the electronic device includes an oxide thin-film transistor.

[0139] The specific details of the method for preparing the photoelectric detection substrate disclosed herein have been described in detail in the aforementioned photoelectric detection substrate preparation process, and will not be repeated here.

[0140] The method for fabricating a photodetector substrate disclosed herein effectively improves the performance of the photodiode and reduces production costs by employing a P-layer-free Schottky photodiode. Since the photodiode lacks a P-layer, it avoids light absorption, especially short-wavelength light absorption, reducing light loss and effectively improving photodiode performance. The absence of a P-layer also avoids chamber contamination caused by the P-layer fabrication process, preventing subsequent doping of amorphous silicon and ensuring photodiode performance. Furthermore, it eliminates the need for frequent chamber cleaning processes, improving production efficiency and reducing costs. Moreover, because the photodiode lacks a P-layer, P-doping is not required, allowing the use of oxide thin-film transistors (TFTs). TFTs offer advantages such as low leakage current and high mobility, and can directly utilize existing equipment and processes for fabricating oxide TFTs without modification. This ensures good compatibility with existing fabrication processes, resulting in high production efficiency, low production costs, and high yield.

[0141] This disclosure also provides a photoelectric detection device, including the photoelectric detection substrate of the aforementioned exemplary embodiments.

[0142] While the embodiments disclosed herein are as described above, the content is merely for the purpose of facilitating understanding of this disclosure and is not intended to limit the invention. Any person skilled in the art may make any modifications and changes to the form and details of the implementation without departing from the spirit and scope of this disclosure; however, the patent protection scope of this invention shall still be determined by the scope defined in the appended claims.

Claims

1. A photoelectric detection substrate, characterized in that, Includes a glass substrate and electronic and optical devices disposed on the glass substrate. The optical device is a Schottky photodiode, which includes a first electrode, an ohmic contact layer, an intrinsic layer, and a second electrode. The intrinsic layer is weakly N-type, and the material of the ohmic contact layer includes N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy. The electronic device includes a thin-film transistor, which includes a gate electrode, an active layer, a source electrode, and a drain electrode, wherein the source electrode and the drain electrode are respectively connected to the active layer; The photodetector substrate further includes a first insulating layer, a second insulating layer, a third insulating layer, a planarization layer, electrode leads, and a fourth insulating layer. The first insulating layer covers the gate electrode of the thin-film transistor. The active layer, source electrode, and drain electrode of the thin-film transistor are disposed on the first insulating layer. The second insulating layer covers the thin-film transistor and has a first opening exposing the drain electrode. The first electrode of the Schottky photodiode is disposed on the second insulating layer and connected to the drain electrode of the thin-film transistor through the first opening. The third insulating layer covers the first electrode, the ohmic contact layer, the intrinsic layer, and the second electrode of the Schottky photodiode. The planarization layer covers the third insulating layer and has a second opening on both the third insulating layer and the planarization layer, exposing the second electrode. The electrode leads are disposed on the planarization layer and connected to the second electrode through the second opening. The fourth insulating layer covers the electrode leads. The Schottky photodiode is a Schottky photodiode without a P-layer.

2. The photoelectric detection substrate according to claim 1, characterized in that, The Schottky photodiode includes: a first electrode, an ohmic contact layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the ohmic contact layer away from the glass substrate, and a second electrode disposed on the side of the intrinsic layer away from the glass substrate; or, the Schottky photodiode includes: a first electrode, an intrinsic layer disposed on the side of the first electrode away from the glass substrate, an ohmic contact layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the ohmic contact layer away from the glass substrate.

3. The photoelectric detection substrate according to claim 1, characterized in that, The Schottky photodiode includes: a first electrode, an ohmic contact layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the ohmic contact layer away from the glass substrate, a barrier layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the barrier layer away from the glass substrate; or, the Schottky photodiode includes: a first electrode, a barrier layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the barrier layer away from the glass substrate, an ohmic contact layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the ohmic contact layer away from the glass substrate.

4. The photoelectric detection substrate according to claim 1, characterized in that, The Schottky photodiode includes: a first electrode, a first barrier layer disposed on the side of the first electrode away from the glass substrate, an intrinsic layer disposed on the side of the first barrier layer away from the glass substrate, a second barrier layer disposed on the side of the intrinsic layer away from the glass substrate, and a second electrode disposed on the side of the second barrier layer away from the glass substrate.

5. The photoelectric detection substrate according to any one of claims 2 to 4, characterized in that, The material of the first electrode includes molybdenum, aluminum, copper, lead or gold, the material of the second electrode includes indium tin oxide or indium zinc oxide, and the material of the intrinsic layer includes amorphous silicon, microcrystalline silicon or silicon-germanium alloy.

6. The photoelectric detection substrate according to any one of claims 3 to 4, characterized in that, The barrier layer is made of silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide.

7. The photoelectric detection substrate according to any one of claims 3 to 4, characterized in that, The thickness of the barrier layer is 1 nm to 5 nm.

8. The photoelectric detection substrate according to any one of claims 1 to 4, characterized in that, The thin-film transistor includes an oxide thin-film transistor.

9. A photoelectric detection device, characterized in that, Includes the photodetector substrate as described in any one of claims 1 to 8.

10. A method for preparing a photoelectric detection substrate, characterized in that, include: Electronic and optical devices are formed on a glass substrate; The optical device is a Schottky photodiode, which includes a first electrode, an ohmic contact layer, an intrinsic layer, and a second electrode. The intrinsic layer is weakly N-type, and the material of the ohmic contact layer includes N-type doped amorphous silicon, N-type doped microcrystalline silicon, or N-type doped silicon-germanium alloy. The electronic device includes a thin-film transistor, which includes a gate electrode, an active layer, a source electrode, and a drain electrode, wherein the source electrode and the drain electrode are respectively connected to the active layer; The photodetector substrate further includes a first insulating layer, a second insulating layer, a third insulating layer, a planarization layer, electrode leads, and a fourth insulating layer. The first insulating layer covers the gate electrode of the thin-film transistor. The active layer, source electrode, and drain electrode of the thin-film transistor are disposed on the first insulating layer. The second insulating layer covers the thin-film transistor and has a first opening exposing the drain electrode. The first electrode of the Schottky photodiode is disposed on the second insulating layer and connected to the drain electrode of the thin-film transistor through the first opening. The third insulating layer covers the first electrode, the ohmic contact layer, the intrinsic layer, and the second electrode of the Schottky photodiode. The planarization layer covers the third insulating layer and has a second opening on both the third insulating layer and the planarization layer, exposing the second electrode. The electrode leads are disposed on the planarization layer and connected to the second electrode through the second opening. The fourth insulating layer covers the electrode leads. The Schottky photodiode is a Schottky photodiode without a P-layer.

11. The preparation method according to claim 10, characterized in that, Forming a Schottky photodiode on a glass substrate includes: A first electrode is formed; an ohmic contact layer, an intrinsic layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, and the second electrode is disposed on the side of the intrinsic layer away from the glass substrate; or, A first electrode is formed; an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the intrinsic layer is disposed on the side of the first electrode away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

12. The preparation method according to claim 10, characterized in that, Forming a Schottky photodiode on a glass substrate includes: A first electrode is formed; an ohmic contact layer, an intrinsic layer, a barrier layer, and a second electrode are formed sequentially; the ohmic contact layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the ohmic contact layer away from the glass substrate, the barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the barrier layer away from the glass substrate; or, A first electrode is formed; a barrier layer, an intrinsic layer, an ohmic contact layer, and a second electrode are formed sequentially; the barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the barrier layer away from the glass substrate, the ohmic contact layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the ohmic contact layer away from the glass substrate.

13. The preparation method according to claim 10, characterized in that, Forming a Schottky photodiode on a glass substrate includes: A first electrode is formed; a first barrier layer, an intrinsic layer, a second barrier layer, and a second electrode are formed sequentially; the first barrier layer is disposed on the side of the first electrode away from the glass substrate, the intrinsic layer is disposed on the side of the first barrier layer away from the glass substrate, the second barrier layer is disposed on the side of the intrinsic layer away from the glass substrate, and the second electrode is disposed on the side of the second barrier layer away from the glass substrate.

14. The preparation method according to any one of claims 11 to 13, characterized in that, The material of the first electrode includes molybdenum, aluminum, copper, lead or gold, the material of the second electrode includes indium tin oxide or indium zinc oxide, and the material of the intrinsic layer includes amorphous silicon, microcrystalline silicon or silicon-germanium alloy.

15. The preparation method according to any one of claims 12 to 13, characterized in that, The barrier layer is made of silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, and is deposited using plasma-enhanced chemical vapor deposition, atomic layer deposition, thermal oxidation, or chemical oxidation. The thickness of the barrier layer is 1 nm to 5 nm.

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