Semiconductor ultraviolet single photon detector and control method

Abstract

This invention provides a semiconductor ultraviolet single-photon detector and its control method, relating to the field of single-photon detection technology. The semiconductor ultraviolet single-photon detector includes a silicon carbide single-photon avalanche photodiode, a readout circuit, a signal processing module, a temperature control module, a bias module, and an enable module. The readout circuit passively quenches the silicon carbide single-photon avalanche photodiode to generate a negative pulse avalanche signal; the signal processing module filters, amplifies, and distinguishes the negative pulse avalanche signal, converting it into a digital signal output; the temperature control module provides a stable temperature for the readout circuit; the bias module provides a DC bias voltage for the readout circuit based on internal and external temperature differences; and the enable module shields against strong external light signals and sets a dead time. The semiconductor ultraviolet single-photon detector of this invention has advantages such as small size, easy integration, stable performance, mild operating conditions, and easy array expansion.

Description

Technical Field

[0001] This invention relates to the field of single-photon detection technology, and in particular to a semiconductor ultraviolet single-photon detector and its control method. Background Technology

[0002] Ultraviolet (UV) single-photon detectors are the primary tools for detecting weak UV light and have wide applications in numerous fields such as lidar, biofluorescence detection, and fire early warning. Currently, most commercially available UV single-photon detectors are based on photomultiplier tubes (PMTs), which inherently have disadvantages such as requiring extremely high operating voltages, short lifespans, and high inter-pixel crosstalk. In contrast, silicon carbide single-photon avalanche photodiodes (4H-SiC SPADs) operating in the UV band offer advantages such as small size, easy integration, stable performance, mild operating conditions, and ease of array expansion, making them the main future development direction for UV single-photon detectors. However, current avalanche photodiode-based single-photon detectors suffer from high noise levels and insufficient performance stability, and cannot yet meet the needs of applications requiring high detection performance. Summary of the Invention

[0003] In view of the above problems, the present invention provides a semiconductor ultraviolet single-photon detector and control method, which can effectively reduce the noise level of the detector and improve its performance stability.

[0004] A first aspect of the present invention provides a semiconductor ultraviolet single-photon detector, comprising:

[0005] Silicon carbide single-photon avalanche photodiode;

[0006] The readout circuit is used to passively quench the silicon carbide single-photon avalanche photodiode to generate a negative pulse avalanche signal.

[0007] The signal processing module is used to filter, amplify, and distinguish negative pulse avalanche signals, and convert them into digital signal outputs.

[0008] The temperature control module and the bias module are used to provide a stable temperature and a DC bias voltage based on the internal and external temperature difference correction for the readout circuit, respectively.

[0009] The enable module is used to shield external strong light signals and set the dead time.

[0010] According to an embodiment of the present invention, the readout circuit includes:

[0011] The quenching resistor is used to passively quench the silicon carbide single-photon avalanche photodiode. One end of the quenching resistor is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the bias module.

[0012] The coupling capacitor is used to output the negative pulse avalanche signal. One end of the coupling capacitor is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the signal processing module.

[0013] According to an embodiment of the present invention, the enable module is further used to control the rapid entry or exit of the silicon carbide single-photon avalanche photodiode into Geiger mode. The enable module includes a shaping module, an enable generation module, a comparator, and an amplification module, wherein:

[0014] The shaping module receives a negative pulse avalanche signal to extend the pulse width to a preset dead time length;

[0015] The enable generation module is used to input enable signals from external sources;

[0016] The comparator is used to perform an OR operation between the pulse width with a preset dead time length and the enable signal; the comparator is connected to the amplifier module.

[0017] The amplification module amplifies the output signal of the comparator, and the output of the amplification module is connected to the anode of the silicon carbide single-photon avalanche photodiode.

[0018] According to an embodiment of the present invention, the signal processing module includes:

[0019] The first low-pass filter module, the low-noise amplification module, the second low-pass filter module, and the discrimination and shaping module are connected in sequence. The input terminal of the first low-pass filter module is connected to the negative pulse avalanche signal, and the discrimination and shaping module is used to shape the detection signal into a standard digital signal and output it.

[0020] A second aspect of the present invention provides a control method for a semiconductor ultraviolet single-photon detector as described above, for bias control of the semiconductor ultraviolet single-photon detector, comprising:

[0021] S11, obtain the current ambient temperature and the element temperature of the thermistor near the silicon carbide single-photon avalanche photodiode;

[0022] S12, calculate the temperature difference between the ambient temperature and the component temperature, and correct the temperature difference using a preset bias correction coefficient to obtain the bias correction value;

[0023] S13, sum the bias correction value with the preset bias value to obtain the target output bias amount.

[0024] According to an embodiment of the present invention, the preset bias correction coefficient is determined by cyclic high and low temperature experiments.

[0025] A third aspect of the present invention provides a control method for a semiconductor ultraviolet single-photon detector as described above, for temperature control of the semiconductor ultraviolet single-photon detector, comprising:

[0026] S21, preset target temperature value;

[0027] S22, when the ambient temperature is at the preset ambient temperature, the target cooling power corresponding to the target temperature value is obtained by looking up the table, and the target cooling power is output;

[0028] S23, wait for a preset time, then measure the current temperature of the silicon carbide single-photon avalanche photodiode and calculate the difference between the current temperature and the target temperature value;

[0029] S24, determine if the absolute value of the difference is greater than the preset error threshold. If so, proceed to S25; otherwise, repeat S23 until the absolute value of the difference is greater than the preset error threshold.

[0030] S25, determine whether the difference is greater than 0. If it is, increase the current cooling power according to the preset power increment step size and the preset temperature difference correction coefficient, and then return to S22 above; otherwise, decrease the current cooling power according to the preset power decrement step size and the preset temperature difference correction coefficient, and then return to S22 above.

[0031] According to an embodiment of the present invention, the current cooling power is increased according to the following formula:

[0032] Pi +1 =P i +Ps+k×δ

[0033] Among them, P i+1 Pi represents the increased cooling power; k represents the preset temperature difference correction coefficient; Ps represents the preset power increment step size; δ represents the difference between the current temperature and the target temperature value.

[0034] According to an embodiment of the present invention, the current cooling power is reduced according to the following formula:

[0035] Pi +1 =P i -P m +k×δ2

[0036] Among them, Pi +1 Pi represents the reduced cooling power; k represents the current cooling power; P represents the preset temperature difference correction coefficient. m This indicates the preset power decrease step size; δ represents the difference between the current temperature and the target temperature value.

[0037] Compared with the prior art, the semiconductor ultraviolet single-photon detector provided by the present invention has at least the following beneficial effects:

[0038] (1) Cooling the 4H-SiC SPAD to a lower temperature can effectively reduce the dark count rate of the detector;

[0039] (2) Providing a DC bias voltage based on internal and external temperature difference correction is beneficial to enhancing the temperature stability of detection efficiency;

[0040] (3) Using a large resistance passive quenching method can shorten the avalanche time, thereby reducing the afterpulse probability and enabling the detector to operate in free-running mode;

[0041] (4) The enable module can not only shield external strong light signals, but also be used to set the dead time, which greatly reduces the probability of afterpulse.

[0042] (5) The semiconductor ultraviolet single-photon detector provided by the present invention has advantages such as small size, easy integration, stable performance, mild working conditions and easy array expansion, and can be widely used in many fields such as lidar, biological fluorescence detection and fire early warning. Attached Figure Description

[0043] The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0044] Figure 1 The schematic diagram illustrates the circuit principle of a semiconductor ultraviolet single-photon detector according to an embodiment of the present invention;

[0045] Figure 2 The schematic diagram illustrates the circuit schematic of an enable module according to an embodiment of the present invention;

[0046] Figure 3 The schematic diagram illustrates a circuit diagram of a signal processing module according to an embodiment of the present invention;

[0047] Figure 4 A schematic diagram illustrating the structure of a semiconductor ultraviolet single-photon detector according to an embodiment of the present invention is shown.

[0048] Figure 5 A flowchart illustrating a control method according to another embodiment of the present invention is shown schematically;

[0049] Figure 6 A schematic diagram illustrating a specific logic flow of a control method according to another embodiment of the present invention is shown.

[0050] Figure 7 A flowchart illustrating a control method according to yet another embodiment of the present invention is shown schematically;

[0051] Figure 8 A schematic diagram illustrating a specific logic flow of a control method according to yet another embodiment of the present invention is shown.

[0052] Figures 9(a) to 9(b)The following diagram illustrates the performance test results of a low-noise single-photon detector according to an embodiment of the present invention, wherein: Figure 9(a) is a graph showing the relationship between dark count rate and detection efficiency at different temperatures; Figure 9(b) is a graph showing the relationship between total afterpulse probability and dead time at different temperatures. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0054] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0055] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0056] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0057] Figure 1 The schematic diagram illustrates the circuit principle of a semiconductor ultraviolet single-photon detector according to an embodiment of the present invention.

[0058] like Figure 1 As shown, the semiconductor ultraviolet single-photon detector provided in this embodiment of the invention includes a silicon carbide single-photon avalanche photodiode (4H-SiC SPAD), a readout circuit 11, a signal processing module 15, a temperature control module 14, a bias module 12, and an enable module 13.

[0059] The readout circuit 11 is used to passively quench the silicon carbide single-photon avalanche photodiode to form a negative pulse avalanche signal; the signal processing module 15 is used to filter, amplify, and distinguish the negative pulse avalanche signal and convert it into a digital signal output; the temperature control module 14 is used to provide a stable temperature for the readout circuit 11; the bias module 12 is used to provide the readout circuit 11 with a DC bias voltage based on the internal and external temperature difference correction; and the enable module 13 is used to shield external strong light signals and set the dead time.

[0060] Please continue reading. Figure 1 In this embodiment of the invention, the readout circuit 11 includes a quenching resistor R and a coupling capacitor C. The quenching resistor R is used to passively quench the silicon carbide single-photon avalanche photodiode. One end of the quenching resistor R is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the bias module. The coupling capacitor C is used to output a negative pulse avalanche signal. One end of the coupling capacitor C is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the signal processing module 15.

[0061] Figure 2 The schematic diagram illustrates the circuit schematic of an enable module according to an embodiment of the present invention.

[0062] like Figure 2 As shown in the embodiment of the present invention, the enable module 13 is also used to control the silicon carbide single-photon avalanche photodiode to quickly enter or exit Geiger mode. The enable module 13 includes a shaping module 131, an enable generation module 132, a comparator 133, and an amplification module 134, wherein: the shaping module 131 receives a negative pulse avalanche signal and is used to extend the pulse width to a preset dead time length; the enable generation module 132 is used to input an enable signal from the outside; the comparator 133 is used to perform an OR operation between the pulse width of the preset dead time length and the enable signal, and the comparator 133 is connected to the amplification module 134; the amplification module 134 amplifies the output signal of the comparator 133, and the output terminal of the amplification module 134 is connected to the anode of the silicon carbide single-photon avalanche photodiode.

[0063] Figure 3 A schematic diagram of a signal processing module according to an embodiment of the present invention is shown.

[0064] like Figure 3 As shown in the embodiment of the present invention, the signal processing module 15 includes a first low-pass filter module 151, a low-noise amplification module 152, a second low-pass filter module 153, and a discrimination and shaping module 154 connected in sequence. The input terminal of the first low-pass filter module 151 is connected to a negative pulse avalanche signal, and the discrimination and shaping module 154 is used to shape the detection signal into a standard digital signal and output it.

[0065] Figure 4A schematic diagram of a semiconductor ultraviolet single-photon detector according to an embodiment of the present invention is shown.

[0066] like Figure 4 As shown, the overall dimensions of the structure are approximately 100mm × 150mm × 70mm. Structure 66 is a cooling chamber with dimensions of 80mm × 65mm × 52mm. A single-photon signal is incident from the observation window 61 onto the photosensitive surface of the 4H-SiC SPAD 62. The 4H-SiC SPAD 62 is mounted on the cold end of the thermoelectric cooler 63, and the hot end of the thermoelectric cooler 63 is mounted on a housing with heat sinks 64. The two stages of the 4H-SiC SPAD 62 are connected to the readout circuit board 65. Structure 67 is a control chamber with dimensions of 90mm × 70mm × 65mm, used to mount the control circuit 68 and output the detection signal. An MCX connector 69 is also provided between the cooling chamber 66 and the control chamber 67, and the cooling chamber and the control chamber are electrically connected via the MCX connector.

[0067] In this embodiment of the invention, to prevent the thermal convection effect from affecting the cooling performance, the cooling chamber is vacuum-sealed; that is, the cooling chamber needs to be evacuated during use. Furthermore, the cooling chamber is also equipped with a cover plate, and the observation window, cover plate, and MCX connector all have a preset vacuum isolation degree. Thus, the cooling chamber adopts a high vacuum isolation design, maintaining a vacuum during use, which can significantly reduce the impact of thermal convection on the operating temperature of the 4H-SiC SPAD.

[0068] Figure 5 A flowchart illustrating a bias control method according to another embodiment of the present invention is shown.

[0069] like Figure 5 As shown, another embodiment of the present invention provides a control method for a semiconductor ultraviolet single-photon detector as described above, for bias control of the semiconductor ultraviolet single-photon detector. The control method may specifically include the following steps S11 to S13.

[0070] In step S11, the current ambient temperature and the element temperature of the thermistor near the silicon carbide single-photon avalanche photodiode are obtained.

[0071] In step S12, the temperature difference between the ambient temperature and the component temperature is calculated, and the temperature difference is corrected using a preset bias correction coefficient to obtain the bias correction value.

[0072] In step S13, the bias correction value is summed with the preset bias value to obtain the target output bias amount.

[0073] Figure 6 A schematic diagram illustrating a specific logic flowchart of a control method according to another embodiment of the present invention is shown.

[0074] like Figure 6 As shown, specifically, the bias control method can be performed according to the following operation procedure: simultaneously measure the ambient temperature Ta and the temperature Ts of the thermistor near the 4H-SiC SPAD, and calculate the temperature difference δ; multiply the temperature difference δ by the bias temperature correction coefficient γ to obtain the bias correction value Vc; add the correction value Vc to the set bias Vs to obtain the actual output bias value Vo.

[0075] In another embodiment of the present invention, the preset bias correction coefficient γ is determined by cyclic high and low temperature experiments.

[0076] Figure 7 A flowchart illustrating a control method according to yet another embodiment of the present invention is shown.

[0077] like Figure 7 As shown, another embodiment of the present invention provides a control method for a semiconductor ultraviolet single-photon detector as described above, for temperature control of the semiconductor ultraviolet single-photon detector. The control method may specifically include the following steps S21 to S25.

[0078] In step S21, the target temperature value is preset.

[0079] In step S22, under the preset ambient temperature, the target cooling power corresponding to the target temperature value is obtained by looking up a table, and the target cooling power is output.

[0080] In step S23, wait for a preset time, then measure the current temperature of the silicon carbide single-photon avalanche photodiode and calculate the difference between the current temperature and the target temperature value.

[0081] In step S24, it is determined that the absolute value of the difference is greater than the preset error threshold. If so, proceed to S25; otherwise, repeat step S23 until the absolute value of the difference is greater than the preset error threshold.

[0082] In step S25, it is determined whether the difference is greater than 0. If it is, the current cooling power is increased according to the preset power increment step size and the preset temperature difference correction coefficient, and then the process returns to S22 above. Otherwise, the current cooling power is decreased according to the preset power decrement step size and the preset temperature difference correction coefficient, and then the process returns to S22 above.

[0083] Figure 8 A schematic diagram illustrating a specific logic flowchart of a control method according to yet another embodiment of the present invention is shown.

[0084] Specifically, such as Figure 8As shown, the above control method can be implemented according to the following operation procedure: The user sets the target temperature value T0; the cooling power P0 corresponding to the target temperature when the ambient temperature is 20℃ is obtained by looking up the table; the cooling power is output and the waiting time τ is waited; the 4H-SiC SPAD temperature Ti is measured and the difference δ between it and the target temperature T0 is calculated; if δ is greater than 0 and its absolute value is greater than the preset error range, the cooling power needs to be increased, and the new output power value is Pi. +1 =P i +Ps+k*δ, where Ps is the power increment step value and k is the temperature difference correction coefficient; if δ is less than 0 and its absolute value is greater than the preset error range, the cooling power needs to be reduced, and the new output power value is Pi. +1 =P i -Ps+k*δ, where Ps is the power decrease step value and k is the temperature difference correction coefficient; repeat the above steps until the difference δ enters the preset error range.

[0085] In another embodiment of the present invention, the current cooling power is increased according to the following formula:

[0086] Pi +1 =P i +P s +k×δ

[0087] Among them, Pi +1 Pi represents the increased cooling power; k represents the current cooling power; Ps represents the preset temperature difference correction coefficient; δ represents the preset power increment step size; and δ represents the difference between the current temperature and the target temperature value.

[0088] In another embodiment of the present invention, the current cooling power is reduced according to the following formula:

[0089] Pi +1 =P i -P m +k×δ

[0090] Among them, Pi + 1 represents the reduced cooling power; Pi represents the current cooling power; k represents the preset temperature difference correction coefficient; P m This indicates the preset power decrease step size; δ represents the difference between the current temperature and the target temperature value.

[0091] It should be noted that the preset power increment step size and the preset power decrement step size can be set according to actual needs. They can be the same or different, and the specific values ​​are not limited in this invention.

[0092] Figures 9(a) to 9(b)The following diagram illustrates the performance test results of a low-noise single-photon detector according to an embodiment of the present invention, wherein: Figure 9(a) is a graph showing the relationship between dark count rate and detection efficiency at different temperatures; Figure 9(b) is a graph showing the relationship between total afterpulse probability and dead time at different temperatures.

[0093] As shown in Figure 9(a), it can be seen that the dark count rate decreases significantly when the operating temperature of the 4H-SiC ultraviolet avalanche photodiode decreases. As shown in Figure 9(b), it can be seen that even at a lower operating temperature, by appropriately extending the dead time, the total afterpulse probability can be reduced to below 1%, which is two orders of magnitude lower than the nearly 100% afterpulse probability without dead time.

[0094] In summary, this invention provides a semiconductor ultraviolet single-photon detector, comprising a silicon carbide single-photon avalanche photodiode, a readout circuit, a signal processing module, a temperature control module, a bias module, and an enable module. The readout circuit passively quenches the silicon carbide single-photon avalanche photodiode to generate a negative pulse avalanche signal; the signal processing module filters, amplifies, and distinguishes the negative pulse avalanche signal, converting it into a digital signal output; the temperature control module provides a stable temperature for the readout circuit; the bias module provides a DC bias voltage for the readout circuit based on internal and external temperature differences; and the enable module shields against strong external light signals and sets a dead time. This semiconductor ultraviolet single-photon detector has advantages such as small size, easy integration, stable performance, mild operating conditions, and easy array expansion.

[0095] In the description of this invention, it should be understood that the terms "upper," "lower," "front," "rear," "left," and "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding the invention. Furthermore, the shape, size, and positional relationship of the components in the drawings do not reflect their actual size, scale, or actual positional relationship.

[0096] Similarly, to simplify the invention and aid in understanding one or more of the various disclosed aspects, in the above description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together into a single embodiment, figure, or description thereof. The use of terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicates that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0097] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified. Furthermore, the word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. Unless otherwise stated, the expressions "about," "approximately," "substantially," and "around" indicate less than 10%, preferably less than 5%.

[0098] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor ultraviolet single-photon detector, characterized in that, include: A silicon carbide single-photon avalanche photodiode is placed in a vacuum-sealed cooling chamber. The silicon carbide single-photon avalanche photodiode is mounted on the cold end of a thermoelectric cooler, and the hot end of the thermoelectric cooler is mounted on a housing with heat sinks. The readout circuit is used to passively quench the silicon carbide single-photon avalanche photodiode to generate a negative pulse avalanche signal. The signal processing module includes a first low-pass filter module, a low-noise amplification module, a second low-pass filter module, and a discrimination and shaping module connected in sequence. The signal processing module is used to filter, amplify, and discriminate the negative pulse avalanche signal and convert it into a digital signal output. The input terminal of the first low-pass filter module is connected to the negative pulse avalanche signal, and the discrimination and shaping module is used to shape the detection signal into a standard digital signal and output it. A temperature control module and a bias module are used to provide a stable temperature and a DC bias voltage based on internal and external temperature difference correction for the readout circuit, respectively. The bias module is configured to acquire the current ambient temperature and the element temperature of the thermistor near the silicon carbide single-photon avalanche photodiode; calculate the temperature difference between the ambient temperature and the element temperature; correct the temperature difference using a preset bias correction coefficient to obtain a bias correction value; and sum the bias correction value with the preset bias value to obtain the target output bias amount. The enable module, used to shield external strong light signals and set a dead time, includes a shaping module, an enable generation module, a comparator, and an amplification module, wherein: The shaping module is connected to the negative pulse avalanche signal and is used to expand the pulse width to a preset dead time length; The enable generation module is used to input an enable signal from an external source; The comparator is used to perform an OR operation between the pulse width of the preset dead time length and the enable signal, and the comparator is connected to the amplification module; The amplification module amplifies the output signal of the comparator, and the output terminal of the amplification module is connected to the anode of the silicon carbide single-photon avalanche photodiode.

2. The semiconductor ultraviolet single-photon detector according to claim 1, characterized in that, The readout circuit includes: A quenching resistor is used to passively quench the silicon carbide single-photon avalanche photodiode. One end of the quenching resistor is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the bias module. A coupling capacitor is used to output a negative pulse avalanche signal. One end of the coupling capacitor is connected to the cathode of the silicon carbide single-photon avalanche photodiode, and the other end is connected to the signal processing module.

3. The semiconductor ultraviolet single-photon detector according to claim 1, characterized in that, The enabling module is also used to control the silicon carbide single-photon avalanche photodiode to quickly enter or exit Geiger mode.

4. A control method for a semiconductor ultraviolet single-photon detector as described in any one of claims 1-3, used for bias control of the semiconductor ultraviolet single-photon detector, characterized in that, include: S11, obtain the current ambient temperature and the element temperature of the thermistor near the silicon carbide single-photon avalanche photodiode; S12, calculate the temperature difference between the ambient temperature and the component temperature, and correct the temperature difference using a preset bias correction coefficient to obtain the bias correction value; S13, sum the bias correction value with the preset bias value to obtain the target output bias amount.

5. The control method according to claim 4, characterized in that, The preset bias correction coefficient is determined through cyclic high and low temperature experiments.

6. A control method for a semiconductor ultraviolet single-photon detector as described in any one of claims 1-3, used for temperature control of the semiconductor ultraviolet single-photon detector, characterized in that, include: S21, preset target temperature value; S22, when the ambient temperature is at a preset ambient temperature, the target cooling power corresponding to the target temperature value is obtained by looking up a table, and the target cooling power is output; S23, wait for a preset time, then measure the current temperature of the silicon carbide single-photon avalanche photodiode and calculate the difference between the current temperature and the target temperature value; S24, determine if the absolute value of the difference is greater than a preset error threshold. If so, proceed to S25; otherwise, repeat S23 until the absolute value of the difference is greater than the preset error threshold. S25, determine whether the difference is greater than 0. If it is, increase the current cooling power according to the preset power increment step size and the preset temperature difference correction coefficient, and then return to S22 above; otherwise, decrease the current cooling power according to the preset power decrement step size and the preset temperature difference correction coefficient, and then return to S22 above.

7. The control method according to claim 6, characterized in that, Increase the current cooling capacity using the following formula: P i+1 = P i + P s + k x δ P i+1 represents the increased refrigeration power; P i represents the current refrigeration power; k represents a preset temperature difference correction coefficient; P s represents a preset power increment step; and δ represents a difference between the current temperature and the target temperature value.

8. The control method according to claim 7, characterized in that, Reduce the current cooling power using the following formula: P i+1 =P i -P m +k×δ Among them, P i+1 P represents the reduced cooling power; i This indicates the current cooling capacity; k represents the preset temperature difference correction coefficient; P m This indicates the preset power decrease step size; δ represents the difference between the current temperature and the target temperature value.

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