Display device and electronic device

Abstract

The invention disclosed herein is entitled "Display device and electronic device." A display device capable of changing the aspect ratio is provided. The display device includes a plurality of display units and a plurality of drive circuit units. Each of the plurality of display units includes a light-emitting portion and a connection area. Each of the plurality of drive circuit units includes a drive circuit portion and a connection area. The connection areas of adjacent units overlap with each other, and an axis passes through the connection area. Adjacent units are electrically connected to each other by an axis. By adopting this structure, the angle between adjacent units electrically connected by an axis can be changed, thereby changing the aspect ratio of the display device.

Description

Technical Field

[0001] The present invention relates to a display device and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of the invention disclosed in this specification and the like relates to an object, method, or manufacturing method. In addition, one embodiment of the present invention relates to a process, machine, product, or composition of matter. More specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, power storage devices, imaging devices, storage devices, processors, electronic devices, systems, their driving methods, their manufacturing methods, and their inspection methods. Background Art

[0003] In recent years, research and development of light-emitting elements utilizing electroluminescence (EL) have been actively pursued for use as display elements in the display area of ​​display devices. The basic structure of such a light-emitting element consists of a layer containing a light-emitting substance disposed between a pair of electrodes. A voltage is applied to the light-emitting element, causing the light-emitting substance to emit light.

[0004] This light-emitting element is a self-luminous element, so a display device using this light-emitting element has advantages such as high visibility, no need for backlight, and low power consumption. In addition, a display device using this light-emitting element has the advantages of being thin and lightweight and having a high response speed.

[0005] A display device including such a light-emitting element can be flexible, and thus the use of a flexible substrate for a display device has been under investigation.

[0006] As a method for manufacturing a display device using a flexible substrate, a technology has been developed in which an oxide layer and a metal layer are formed between the substrate and a semiconductor element, the substrate is separated by utilizing the low adhesion at the interface between the oxide layer and the metal layer, and then the semiconductor element is transferred to another substrate (e.g., a flexible substrate) (Patent Document 1).

[0007] Sometimes, another flexible substrate is provided on a light-emitting element formed on a flexible substrate to protect the surface of the light-emitting element or to prevent moisture or impurities from entering from the outside.

[0008] A display device including a flexible substrate can be flexible. Therefore, the substrate is preferably formed of a material with low stretchability, high ductility when stretched, and high recoverability after stretching. Patent Document 2 discloses a structure for an electronic device including a resin composition having high tensile stress relaxation properties and excellent recoverability after stretching.

[0009] [References]

[0010] [Patent Document]

[0011] [Patent Document 1] Japanese Patent Application Publication No. 2003-174153

[0012] [Patent Document 2] Japanese Patent Application Publication No. 2016-102669 Summary of the Invention

[0013] In the case of a display device including a light-emitting element on a flexible substrate, the display device may be stretched depending on the material of the substrate. When the display device is stretched, the display device may have a size different from the normal size.

[0014] However, the flexible substrate has a limited degree of stretchability, so excessive stretching may damage the substrate. Even if the substrate is not damaged, the light-emitting elements, circuit elements, and wiring arranged on the substrate may be damaged.

[0015] When a display device including a flexible substrate is stretched, the intensity of light emitted per unit area of ​​the display device decreases. This is because the number of pixels per unit area (sometimes also referred to as resolution) of the stretched display device decreases. Consequently, when using a stretched display device, the quality of the image displayed on the display device may be reduced.

[0016] An object of one embodiment of the present invention is to provide a novel display device capable of changing shape. Another object of one embodiment of the present invention is to provide a novel display device having high display quality even when its shape is changed. Another object of one embodiment of the present invention is to provide an electronic device including the above-mentioned display device.

[0017] Note that the inclusion of these objectives does not preclude the existence of other objectives. In one embodiment of the present invention, it is not necessary to achieve all of the above objectives. Objectives other than the above objectives can be extracted from the description of the specification, drawings, claims, etc.

[0018] (1) One embodiment of the present invention is a display device capable of changing its aspect ratio. The display device includes a display region having a first unit and a second unit. The first unit and the second unit each include a light-emitting portion and a connection region. The connection region of the first unit is electrically connected to the connection region of the second unit. The display region has a function of changing the angle between the first unit and the second unit.

[0019] (2) Another embodiment of the present invention is the display device according to (1), including a drive region. The drive region includes a third unit. The third unit includes a drive circuit portion. The drive circuit portion has a function of driving the light-emitting portion of the first unit and the light-emitting portion of the second unit. The third unit of the drive region is parallel to one of the first unit and the second unit.

[0020] (3) Another embodiment of the present invention is the display device according to (1) or (2), wherein the length of the first unit in the first direction is longer than the length of the first unit in the second direction.

[0021] (4) Another embodiment of the present invention is a display device capable of changing its aspect ratio. The display device includes a display area and a drive area. The display area includes a plurality of first units. The drive area includes a plurality of second units. The plurality of first units each include a connection area, and the plurality of second units each include a connection area. Some of the connection areas in the plurality of first units are electrically connected to some of the connection areas in the plurality of second units. The plurality of first units in the display area are parallel to each other. The plurality of second units in the drive area are parallel to each other. The angle between a first unit and a second unit connected to the first unit can be changed.

[0022] (5) Another embodiment of the present invention is the display device according to (4), wherein each of the plurality of first units includes a light-emitting portion. At least one of the plurality of first units includes a driver circuit portion. Each of the plurality of second units includes a driver circuit portion. At least one of the plurality of second units includes a light-emitting portion.

[0023] (6) Another embodiment of the present invention is a display device capable of changing its aspect ratio. The display device includes a display area. The display area includes a first unit and a second unit. The first unit and the second unit each include a light-emitting portion. The second unit overlaps with the first area of ​​the first unit. The display area has a function of changing the area of ​​the first area.

[0024] (7) Another embodiment of the present invention is the display device according to (6), including a drive region. The drive region includes a third unit and a fourth unit. The third unit has a function of driving the light-emitting portion of the first unit. The fourth unit has a function of driving the light-emitting portion of the second unit. The fourth unit overlaps with the first region of the third unit. The drive region has a function of changing the area of ​​the first region of the third unit.

[0025] (8) Another embodiment of the present invention is the display device according to (7), including a first insulator and a second insulator. The first unit and the third unit are each covered by the first insulator. The second unit and the fourth unit are each covered by the second insulator. The second insulator is located on the first insulator. The first insulator and the second insulator are stretchable.

[0026] (9) One embodiment of the present invention is the display device according to (6), including a third unit and a first insulator. The third unit has a function of driving the light-emitting portions of the first unit and the second unit. The first unit, the second unit, and the third unit are each covered by the first insulator. The first insulator is stretchable.

[0027] (10) Another embodiment of the present invention is the display device according to any one of (1) to (3) and (5) to (9), wherein each of the light-emitting sections includes a light-emitting element.

[0028] (11) Another embodiment of the present invention is an electronic device including the display device according to any one of (1) to (10).

[0029] According to one embodiment of the present invention, a novel display device capable of changing shape can be provided. According to another embodiment of the present invention, a novel display device having high display quality even when its shape changes can be provided. According to another embodiment of the present invention, an electronic device including the above-mentioned display device can be provided.

[0030] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily achieve all of the above effects. Effects other than these effects can be clearly seen and extracted from the description of the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In the attached figure:

[0032] Figure 1A 、 Figure 1B 、 Figure 1C 、 Figure 1D1 and Figure 1D2 An example of a display device is shown;

[0033] Figures 2A to 2C Show Figure 1D1 and Figure 1D2 An example of a configuration of a display device;

[0034] Figures 3A to 3C is a top view and a cross-sectional view of a portion of a display device;

[0035] Figure 4A and Figure 4B is a cross-sectional view showing an example of a shaft;

[0036] Figure 5A and Figure 5B Each is a perspective view showing an example of a conductor included in a shaft;

[0037] Figure 6 is a cross-sectional view showing an example of a shaft;

[0038] Figure 7A and Figure 7B are perspective views and cross-sectional views showing examples of shafts;

[0039] Figure 8A 、 Figure 8B 、 Figure 8C1 、 Figure 8C2 、 Figure 8D1 、 Figure 8D2 and Figure 8E An example of a display device is shown;

[0040] Figures 9A to 9C An example of a display device and an example of the configuration of the display device are shown;

[0041] Figure 10A1 、 Figure 10A2 、 Figure 10B1 and Figure 10B2 An example of an electronic device is shown;

[0042] Figure 11A and Figure 11B An example of an electronic device is shown;

[0043] Figure 12A 、 Figure 12B1 and Figure 12B2 is a schematic diagram showing an example of a display area;

[0044] Figure 13A1 and Figure 13A2 Each is a schematic diagram showing an example of a display area;

[0045] Figure 14A 、 Figure 14B1 and Figure 14B2 is a schematic diagram showing an example of a display area;

[0046] Figure 15A 、 Figure 15B1 and Figure 15B2 are schematic diagrams and cross-sectional views showing examples of a display area;

[0047] Figure 16A 、 Figure 16B1 and Figure 16B2 are schematic diagrams and cross-sectional views showing examples of a display area;

[0048] Figure 17A and Figure 17B is a schematic diagram showing an example of a display device;

[0049] Figure 18A 、 Figure 18B1 and Figure 18B2 are schematic diagrams and cross-sectional views showing an example of a display device;

[0050] 19A to 19Cis a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0051] Figure 20A and Figure 20B is a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0052] Figure 21A and Figure 21B is a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0053] Figure 22 is a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0054] Figure 23 is a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0055] Figure 24A and Figure 24B is a cross-sectional view illustrating an example of a method for manufacturing a display device;

[0056] 25A to 25D An example of an electronic device is shown;

[0057] Figure 26A and Figure 26B An example of an electronic device is shown;

[0058] 27A to 27D shows the structure of the light emitting element;

[0059] Figures 28A to 28C A light emitting device is shown;

[0060] Figure 29 is a cross-sectional view showing an example of a sample;

[0061] 30A to 30D Each is a photograph of a sample. DETAILED DESCRIPTION

[0062] (Supplementary Notes Regarding the Descriptions in This Manual, etc.)

[0063] First, the supplementary notes regarding the configurations described in the following embodiments and examples will be described.

[0064] <Supplementary Notes on One Embodiment of the Present Invention Shown in the Embodiments and Examples>

[0065] The structure described in the embodiment mode can be appropriately combined with any structure described in other embodiment modes and examples to constitute one embodiment mode of the present invention. In addition, when multiple structure examples are described in one embodiment mode, the structure examples can be appropriately combined.

[0066] Note that the content (or a portion thereof) in an embodiment may be applied to, combined with, or replaced with other content in the embodiment and / or content (or a portion thereof) in another or other embodiments.

[0067] Note that in each embodiment and example, the contents described in the embodiment and example are the contents described with reference to various drawings or the contents of the articles in the specification.

[0068] Note that more figures may be formed by combining a figure (or part thereof) shown in one embodiment or an example with other parts of the figure, other figures (or parts thereof) described in the embodiment or example, and / or figures (or parts thereof) shown in another embodiment, other embodiments or examples.

[0069] <Note on Ordinal Numbers>

[0070] In this specification, etc., ordinal numbers such as first, second, and third are added to avoid confusion between components. Therefore, they are not added to limit the number or order of components. For example, a component called "first" in one embodiment of this specification, etc. may be called "second" in another embodiment or claim. Furthermore, in this specification, etc., for example, a component called "first" in one embodiment may be omitted in other embodiments or claims.

[0071] <Supplementary Notes on Description of Drawings>

[0072] Although the embodiments and examples are described with reference to the accompanying drawings, the embodiments and examples can be implemented in a variety of different forms. A person skilled in the art can easily understand the fact that the methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments and examples. Note that in the structure of the invention in the embodiments and examples, the same figure marks are used in different drawings to represent the same parts or parts with the same functions, and repeated descriptions are omitted.

[0073] For convenience, terms such as "upper" and "lower" are used in this specification and other descriptions to describe the positional relationships of components with reference to the accompanying drawings. The positional relationships of the components may vary depending on the orientation in which they are described. Therefore, the terms used to describe the configuration are not limited to those described in this specification and may be appropriately changed depending on the circumstances.

[0074] The terms "above" and "below" do not limit the positional relationship of components to situations where they are directly above or below each other and in direct contact. For example, the phrase "electrode B on insulating layer A" does not necessarily mean that electrode B is formed on insulating layer A in direct contact with the insulating layer. It may also mean that another component is provided between insulating layer A and electrode B.

[0075] In the drawings, sizes, layer thicknesses, and areas are arbitrarily represented for ease of explanation. Therefore, sizes, layer thicknesses, and areas are not limited to the dimensions shown. Note that the drawings are schematic for clarity, and embodiments of the present invention are not limited to the shapes or numerical values ​​shown in the drawings. For example, nonuniformity in signals, voltages, or currents caused by noise or timing variations may be present.

[0076] In drawings such as perspective views, some components may not be shown for clarity.

[0077] In the drawings, the same reference numerals may be used to indicate the same components, components having the same function, components made of the same material, components formed simultaneously, etc., and their descriptions may not be repeated.

[0078] <Supplementary Notes on Records That May Be Renamed>

[0079] In this specification, etc., when describing the connection relationship of a transistor, the terms "one of the source and the drain" (or the first electrode or the first terminal) or "the other of the source and the drain" (or the second electrode or the second terminal) are used. This is because the source and the drain of the transistor are interchangeable depending on the structure or operating conditions of the transistor. The source and the drain of the transistor can be appropriately renamed as the source (or drain) terminal, the source (or drain) electrode, etc. depending on the situation. In this specification, etc., the two terminals other than the gate are sometimes referred to as the first terminal and the second terminal or the third terminal and the fourth terminal. In this specification, etc., when a transistor has more than two gates (this structure is sometimes referred to as a multi-gate structure), the gates are sometimes referred to as the first gate and the second gate. In addition, "bottom gate" refers to a terminal formed before the channel formation region is formed when forming the transistor, and "top gate" refers to a terminal formed after the channel formation region is formed when forming the transistor.

[0080] In this specification, terms such as "electrode" and "wiring" do not functionally limit the components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, terms such as "electrode" and "wiring" may also include the case where multiple "electrodes" and "wiring" are formed as a whole.

[0081] In this specification and other documents, the terms "voltage" and "potential" may be used interchangeably. "Voltage" refers to the potential difference from a reference potential. For example, when the reference potential is ground potential, "voltage" can be referred to as "potential." Ground potential does not necessarily mean 0V. Potential is relative, and the potential supplied to wiring, etc., may vary depending on the reference potential.

[0082] In this specification, etc., terms such as "film" and "layer" may be interchanged depending on the situation or state. For example, "conductive layer" may be replaced with "conductive film" in some cases. Also, "insulating film" may be replaced with "insulating layer" in some cases. Alternatively, depending on the situation or state, terms that do not include "film" or "layer" may be replaced. For example, "conductive layer" or "conductive film" may be replaced with "conductive body". Also, for example, "insulating layer" or "insulating film" may be replaced with "insulator".

[0083] In this specification, etc., the terms "wiring," "signal line," and "power supply line" may be interchanged depending on the situation or status. For example, "wiring" may be replaced with "signal line" or "power line." "Signal line" or "power line" may be replaced with "wiring." "Power line" may be replaced with "signal line." "Signal line" may be replaced with "power line." Depending on the situation or status, the "potential" applied to the wiring may be replaced with "signal." Conversely, "signal" and the like may be replaced with "potential."

[0084] <Supplementary Notes on Definitions of Terms>

[0085] Definitions of terms used in the following embodiments and examples are explained below.

[0086] Impurities in Semiconductors

[0087] Impurities of a semiconductor are, for example, elements other than the main components of the semiconductor layer. For example, an element with a concentration of less than 0.1 atomic% is an impurity. When impurities are contained, a density of states (DOS: Density of States) may be formed in the semiconductor, the carrier mobility may be reduced, or the crystallinity may be reduced. When the semiconductor is an oxide semiconductor, impurities that change the characteristics of the semiconductor include, for example, Group I elements, Group II elements, Group XIII elements, Group XIV elements, and transition metals other than the main components of the semiconductor, specifically, hydrogen (also included in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. When the semiconductor is an oxide semiconductor, for example, the mixing of impurities such as hydrogen sometimes leads to the generation of oxygen vacancies. In addition, when the semiconductor is a silicon layer, examples of impurities that change the characteristics of the semiconductor include oxygen, Group I elements other than hydrogen, Group II elements, Group XIII elements, Group XV elements, etc.

[0088] "transistor"

[0089] In this specification, a transistor refers to a device with at least three terminals: a gate, a drain, and a source. A transistor has a channel formation region between a drain (drain terminal, drain region, or drain electrode) and a source (source terminal, source region, or source electrode). When a voltage is applied between the gate and drain, current flows between the source and drain.

[0090] In addition, when using transistors with opposite polarities or when the direction of current changes during circuit operation, the functions of the source and drain may be reversed. Therefore, in this specification, "source" and "drain" may be reversed.

[0091] "switch"

[0092] In this specification, etc., a switch refers to an element that has the function of controlling whether or not current flows by becoming conductive (on) or non-conductive (off). Alternatively, a switch has the function of selecting and switching a current path.

[0093] Examples of switches include electrical switches and mechanical switches. In other words, any element used as a switch is not limited to a specific element as long as it can control current.

[0094] Examples of electrical switches include transistors (e.g., bipolar transistors or MOS transistors), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, metal-insulator-metal (MIM) diodes, metal-insulator-semiconductor (MIS) diodes, or diode-connected transistors), or logic circuits combining these elements.

[0095] When a transistor is used as a switch, the transistor's "on state" refers to a state in which the source and drain electrodes of the transistor are electrically short-circuited. On the other hand, the transistor's "off state" refers to a state in which the source and drain electrodes of the transistor are electrically disconnected. When a transistor is used solely as a switch, there are no particular restrictions on the transistor's polarity (conductivity type).

[0096] An example of a mechanical switch is a switch using micro-electromechanical system (MEMS) technology, such as a digital micromirror device (DMD). This switch has a mechanically movable electrode and operates by controlling conduction and non-conduction by moving the electrode.

[0097] "connect"

[0098] Note that in this specification, "X and Y are connected" encompasses the following: X and Y are electrically connected; X and Y are functionally connected; and X and Y are directly connected. Therefore, this connection is not limited to a specific connection relationship and includes connections other than those shown in the drawings or text.

[0099] Here, X, Y, etc. each represent an object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.).

[0100] When X and Y are electrically connected, one or more elements capable of electrically connecting X and Y (e.g., switches, transistors, capacitors, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) may be connected between X and Y. Furthermore, the switches are controlled to be on and off. In other words, whether the switch is in a conducting state or a non-conducting state (open or closed) determines whether current flows.

[0101] For example, when X and Y are functionally connected, one or more circuits capable of functionally connecting X and Y may be connected between X and Y (for example, logic circuits such as inverters, NAND circuits, and NOR circuits; signal conversion circuits such as DA converters, AD converters, and gamma correction circuits; potential level conversion circuits such as power supply circuits (for example, step-up or step-down circuits); level conversion circuits for changing the potential level of a signal; voltage sources; current sources; switching circuits; amplifier circuits such as circuits capable of increasing signal amplitude or current, operational amplifiers, differential amplifiers, source follower circuits, and buffer circuits; signal generating circuits; storage circuits; and / or control circuits). For example, even if another circuit is interposed between X and Y, when a signal output from X is transmitted to Y, X and Y can be said to be functionally connected.

[0102] Furthermore, when it is explicitly stated that X and Y are electrically connected, this includes the following: X and Y are electrically connected (in other words, X and Y are connected with another element or other circuit interposed therebetween); X and Y are functionally connected (in other words, X and Y are functionally connected with another circuit interposed therebetween); and X and Y are directly connected (in other words, X and Y are connected without any other element or other circuit interposed therebetween). In other words, explicitly stating that "X and Y are electrically connected" is the same as simply stating that "X and Y are connected."

[0103] For example, the following expressions can be used in the following cases: the source (or first terminal, etc.) of the transistor is electrically connected to X through Z1 (or not through Z1), and the drain (or second terminal, etc.) of the transistor is electrically connected to Y through Z2 (or not through Z2); or the source (or first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y.

[0104] For example, the expression includes “X, Y, the source (or first terminal, etc.) of the transistor, and the drain (or second terminal, etc.) of the transistor are electrically connected to each other and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y,” “The source (or first terminal, etc.) of the transistor is electrically connected to X, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y,” and “X is electrically connected to Y via the source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are arranged to be connected to each other in this order.” When the same expression method as this example is used to specify the connection order in the circuit configuration, the source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor can be distinguished to determine the technical scope. Note that these expression methods are only examples and are not limited to the above expression methods. Here, X, Y, Z1, and Z2 are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films or layers, etc.).

[0105] Even when independent components are electrically connected to each other on a circuit diagram, a single component may have the functions of multiple components. For example, when a portion of a wiring is used as an electrode, a single conductive film may serve as both the wiring and the electrode. Therefore, the term "electrically connected" in this specification includes such cases where a single conductive film has the functions of multiple components.

[0106] Parallel and Perpendicular

[0107] In this specification, "parallel" means that the angle formed by two straight lines is greater than -10° and less than 10°. This also includes situations where the angle is greater than -5° and less than 5°. "Approximately parallel" means that the angle formed by two straight lines is greater than -30° and less than 30°. "Perpendicular" means that the angle formed by two straight lines is greater than 80° and less than 100°. This also includes situations where the angle is greater than 85° and less than 95°. "Approximately perpendicular" means that the angle formed by two straight lines is greater than 60° and less than 120°.

[0108] (Implementation 1)

[0109] In this embodiment, a display device disclosed as one embodiment of the present invention is described.

[0110] <Structure example>

[0111] Figure 1A 、 Figure 1B and Figure 1C A display unit, a driving circuit unit, and a supporting unit included in a display device according to an embodiment of the present invention are shown separately. Figure 1A The display unit 80 shown includes a light emitting portion 81 , a connection region 82 , and a support body 83 . Figure 1B The driving circuit unit 90 shown includes a driving circuit portion 91 , a connection region 92 , and a support body 93 . Figure 1C The support unit 70 shown comprises a connection region 72 and a support body 73 .

[0112] The light-emitting portion 81 of the display unit 80 includes a light-emitting element and a pixel circuit. Examples of light-emitting elements include transmissive liquid crystal elements, organic EL elements, inorganic EL elements, and nitride semiconductor light-emitting diodes. Reflective liquid crystal elements or electrophoretic elements can be used instead of light-emitting elements. The pixel circuit is the circuit used to cause the light-emitting element to emit light. Terminals electrically connected to this circuit are included in the connection region 82.

[0113] In addition, the light-emitting portion 81 may also be a pixel including a plurality of light-emitting elements. For example, the plurality of light-emitting elements may also emit three colors of light, namely red (R), green (G), and blue (B), or four colors of light, namely red (R), green (G), blue (B), and white (W). In addition, the plurality of light-emitting elements may also emit a combination of several colors of light, such as red (R), green (G), blue (B), white (W), cyan (C), yellow (Y), and magenta (M), as needed. The light-emitting portion 81 of the display unit 80 does not need to be a pixel including a plurality of light-emitting elements, but may be, for example, a sub-pixel including a light-emitting element that emits light of any of the above colors.

[0114] The driver circuit portion 91 of the driver circuit unit 90 has the function of driving the pixel circuits included in the display unit 80 to cause the light-emitting elements to emit light. A source driver circuit or a gate driver circuit can be used for the driver circuit portion 91. The terminals electrically connected to the driver circuit portion 91 are included in the connection region 92.

[0115] The connection regions 72, 82, and 92 are provided so as to be electrically connected to other cells. Note that a method of connecting the cells to each other will be described later.

[0116] Figure 1D1A display device according to one embodiment of the present invention is shown. The display device 100 is functionally divided into a display area 101, a drive area 102A, and a drive area 102B.

[0117] The display region 101 includes a plurality of display units 80. The driving region 102A includes a plurality of driving circuit units 90. The driving region 102B includes a plurality of driving circuit units 90 different from the driving circuit units 90 in the driving region 102A. The display device 100 also includes a support unit 70. Figure 1D1 and Figure 1D2 In the embodiment, the support unit 70 is not included in the display area 101, the driving area 102A, and the driving area 102B.

[0118] The units are connected by shafts 60 that pass through the connection regions of the units. Therefore, the units include openings for the shafts in the connection regions. For example, in region 105a, one shaft 60 passes through the connection regions 82 of four display units 80, thereby connecting the four display units 80 to each other. As another example, in region 105b, one shaft 60 passes through the connection regions 82 of two display units 80 and the connection regions 92 of two drive circuit units 90, thereby connecting the two display units 80 and the two drive circuit units 90 to each other. Note that shafts 60 are structures used to electrically connect the units to each other, and the details of shafts 60 will be described later.

[0119] As described above, a source driver circuit or a gate driver circuit can be applied to the driver circuit portion 91 included in the driver circuit unit 90. Therefore, the plurality of driver circuit units 90 included in the driver region 102A can be electrically connected to each other using the shaft 60 to form one of the source driver circuit and the gate driver circuit. In addition, the plurality of driver circuit units 90 included in the driver region 102B can be electrically connected to each other via the shaft 60 to form the other of the source driver circuit and the gate driver circuit.

[0120] The supporting unit 70 has a function of maintaining the structure of the display device 100. Figure 1D1 In the embodiment, one of the connection regions 72 of the support unit 70 is connected to the connection region 92 of the drive circuit unit 90 in the drive region 102A by the shaft 60, and the other connection region 72 of the support unit 70 is connected to the connection region 92 of the drive circuit unit 90 in the drive region 102B by the shaft 60. Alternatively, the support unit 70 may be provided with wiring, circuits, or components. In this case, the connection region 72 of the support unit 70 is electrically connected to the connection region 92 of the drive circuit unit 90 by the shaft 60. If the display device 100 does not require the support unit 70, the support unit 70 may be omitted from the components of the display device 100.

[0121] In addition, the display unit, the driving circuit unit and the supporting unit can all be rotated around the axis 60 in the connection area. Figure 1D1 The angle θ between the dotted line X1-X2 and the dotted line X1-X3 in the display device 100 is 45°, but Figure 1D2 As shown, the unit can also be rotated so that the angle θ is 30° to change the shape of the display device 100. In this case, Figure 1D1 The display device 100 is stretched about 1.2 times in the x direction and about 0.71 times in the y direction, and has Figure 1D2 In other words, by changing the angle θ, the aspect ratio of the display device 100 can be changed. When the display device 100 is stretched as far as possible, the display device 100 is configured so that the unit can move within an angle θ range of approximately 10° to 80°. Depending on the shape of the display unit 80, the range of angle θ may be narrower or wider than the aforementioned range of 10° to 80°.

[0122] Note that due to the structure of the display device 100 , a portion of the plurality of drive circuit units 90 included in the drive region 102A and the drive region 102B is parallel to a portion of the display unit 80 included in the display region 101 .

[0123] As described above, the plurality of display units 80, the plurality of driving circuit units 90, the support unit 70 are formed. Figure 1D1 The display device 100 may be a stretchable display device.

[0124] <Construction method>

[0125] Next, the method for forming Figure 1D1 A method of connecting the units of the display device 100.

[0126] Figures 2A to 2C In this example, only the display unit 80 is described, but depending on the situation or circumstances, or as needed, the drive circuit unit or the support unit can also be substituted for the display unit.

[0127] [Step 1]

[0128] Figure 2AA display unit group 85 is shown in which four display units 80 (display unit 80a, display unit 80b, display unit 80c, and display unit 80d) are combined. Display unit 80a includes a region in which one of the two connection regions 82 of display unit 80a overlaps with one of the two connection regions 82 of display unit 80b, and a region in which the other of the two connection regions 82 of display unit 80a overlaps with one of the two connection regions 82 of display unit 80c. Display unit 80d includes a region in which one of the two connection regions 82 of display unit 80d overlaps with the other of the two connection regions 82 of display unit 80b, and a region in which the other of the two connection regions 82 of display unit 80d overlaps with the other of the two connection regions 82 of display unit 80c. In addition, Figures 2A to 2C In the display unit group 85, the display unit 80a and the display unit 80d are arranged on the lower side, and the display unit 80b and the display unit 80c are arranged on the upper side.

[0129] [Step 2]

[0130] Next, the four display unit groups 85 are arranged so that the connection areas 82 of the four display unit groups 85 overlap. Figure 2A The connection area 82 of the display unit group 85 (see Figure 2B Then, the axis 60 is provided in the overlapping connection area 82 to connect the four display units to each other. Figure 2B The other display unit groups 85 are represented by different hatching lines. Figure 2A Display unit group 85 in.

[0131] [Step 3]

[0132] Then, another four display unit groups 85 are arranged Figure 2B The display unit groups 85 are arranged under the connection areas 82a, 82b, 82c, 82d, 82e, 82f, 82g and 82h and are electrically connected to the connection areas by the axis 60. Specifically, one of the four display unit groups 85 is arranged under the connection areas 82a and 82b and is electrically connected to them by the axis 60a and the axis 60b, one of the remaining three display unit groups 85 is arranged under the connection areas 82c and 82d and is electrically connected to them by the axis 60c and the axis 60d, one of the remaining two display unit groups 85 is arranged under the connection areas 82e and 82f and is electrically connected to them by the axis 60e and the axis 60f, and the remaining display unit groups 85 are arranged under the connection areas 82g and 82h and are electrically connected to them by the axis 60g and the axis 60h (refer to Figure 2C ). Note that in order to avoid complicated description, Figure 2CIn the figure, the display unit group 85 is represented by a different hatching line than the other display unit groups 85. Figure 2A The display unit group 85 and the display unit group 85 electrically connected to the connection area in step 3. That is, in Figure 2C In FIG. 8 , the hatching of the upper display unit group 85 is not changed, but the hatching of the lower display unit group 85 is changed.

[0133] As described above, by connecting adjacent display unit groups 85 so that one of them is located on the upper side and the other one is located on the lower side, a display device can be constructed.

[0134] In addition, when the display unit group 85 is not provided adjacent to the display unit group 85 (for example, Figure 2C (When the display unit group 85 is not newly arranged in the region 106 in the region 106, the display units are electrically connected to each other by the axis 61 passing through the connection region 82 in the region 106. As another example, when the display unit group 85 is not arranged adjacent to the display unit group 85 in a region other than the region 106, the display units are electrically connected to each other by the axis 61 passing through the connection region in the region.

[0135] Next, a cross section of a display device formed by the above-described method will be described.

[0136] Figure 3A Show Figure 2C area 101a in the . Figure 3B It is along Figure 3A The cross-sectional view along the dot-dash line A1-A2 in FIG. Figure 3C It is along Figure 3A A cross-sectional view taken along the double-dashed line B1-B2. Figure 3B and Figure 3C Also shown are shafts 60 e to 60 h , a shaft 60 i , and a shaft 61 having a function of connecting the display units 80 to each other.

[0137] In the region 101a, the display unit groups 85A, 85B, and 85C are electrically connected to each other so that the display unit group 85B is located on the upper side and the display unit group 85A and the display unit group 85C are located on the lower side. Figure 3B and Figure 3C As shown, the display unit group 85B is located above the display unit group 85A and the display unit group 85C.

[0138] Next, the shafts 60e to 60i (collectively referred to as the shaft 60) and a method of electrically connecting the shaft 60 to the display unit 80 will be described. Here, for example, the shaft 60e to the shaft 60i will be described in detail. Figure 3B In the following detailed description, for example, axis 60e, axis 60f, axis 60g, or axis 60i can be substituted for axis 60h. For axis 61, refer to the description of axis 60h below.

[0139] Figure 4A The details of the area 101b are shown. Figure 4B It is along Figure 4A A cross-sectional view of the axis 60h along the dotted line C1-C2.

[0140] The display unit group 85B includes the display unit 80[1] and the display unit 80[2]. The display unit group 85C includes the display unit 80[3] and the display unit 80[4]. Figure 4A In the embodiment, display unit 80[1] includes wiring 86b, and display unit 80[4] includes wiring 86c. Each wiring 86b is electrically connected to conductors 41 to 44. Each wiring 86c is electrically connected to conductors 41 to 44.

[0141] The shaft 60 h includes the electrical conductors 41 to 44 and the electrical conductors 45 to 48 .

[0142] exist Figure 4B In the cross-sectional view of FIG, the conductor 41 is located at the center of the axis 60h. The conductors 42 to 48 are concentrically located around the conductor 41 (at the center of the axis 60h).

[0143] The conductor 41 has Figure 5A The structure is shown in a perspective view. Conductor 41 includes disk 41a, pillar 41b, and disk 41c. Pillar 41b is located at the center of disks 41a and 41c. One of wirings 86b is electrically connected to conductor 41 by contacting the side of disk 41a. One of wirings 86c is electrically connected to conductor 41 by contacting the side of disk 41c.

[0144] The conductor 44 has Figure 5B The structure is shown in a perspective view. Conductor 44 includes a disk 44a having a circular hole, a cylinder 44b, and a disk 44c having a circular hole. The circular hole of disk 44a, the circular hole of disk 44c, and the hollow of cylinder 44b are of the same size. Disk 44c is placed on the lower base of cylinder 44b in a manner such that the circular hole of cylinder 44b is aligned with the hollow of disk 44c. Disk 44a is placed on the upper base of cylinder 44b in a manner such that the circular hole of disk 44a is aligned with the hollow of cylinder 44b. One of the wirings 86b is electrically connected to conductor 44 by contacting the side of disk 44a. One of the wirings 86c is electrically connected to conductor 44 by contacting the side of disk 44c.

[0145] For the structures of the conductors 42 , 43 , 45 to 48 , refer to the description of the conductor 44 .

[0146] exist Figure 4AIn the embodiment, conductor 42 has the function of electrically connecting one of wirings 86b to one of wirings 86c. Conductor 43 has the function of electrically connecting another of wirings 86b to another of wirings 86c. Although not shown, conductors 45 to 48 have the function of electrically connecting the wiring included in display unit 80[2] to the wiring included in display unit 80[3].

[0147] When the shaft 60 includes a conductor having Figure 4A and Figure 4B as well as Figure 5A and Figure 5B In the illustrated configuration, the units can be electrically connected to each other via shaft 60 .

[0148] Figure 4A and Figure 4B An example of the structure of the shaft 60h is shown, but one embodiment of the present invention is not limited to this example. Figure 4A and Figure 4B In addition to the structure, the shaft 60h may also have Figure 6 In the structure. Figure 6 In the structure shown, a plurality of wirings 86b are in contact with each of the conductors 41 to 44, and a plurality of wirings 86c are in contact with each of the conductors 41 to 44. Similarly, the wiring included in the display unit 80[2] is in contact with each of the conductors 45 to 48, and the wiring included in the display unit 80[3] is in contact with each of the conductors 45 to 48 ( Figure 6 (The contact between the wiring and the conductors 45 to 48 is not shown.) Note that the conductors are located above the wiring on the upper side of the shaft 60h, and above the conductors on the lower side of the shaft 60h. This structure can reduce the contact resistance between the wiring included in the display unit and the conductors included in the shaft 60h.

[0149] Furthermore, for example, the shaft 60 h may include a code formed of a conductive body having stretchability and ductility covered with an insulator such as rubber, instead of the conductive bodies 41 to 48 . Figure 7A and Figure 7B A shaft having this structure is shown as shaft 60A. Figure 7A 1 is a perspective view of a shaft 60A including the code in place of the electrical conductors 41 to 48 . Figure 7B It is along Figure 7A A cross-sectional view of the axis 60A along the plane Y1-Y2.

[0150] exist Figure 7AIn the embodiment, shaft 60A includes openings 69b[1], 69b[2], 69c[1], and 69c[2] for connecting the code to wiring included in the display unit (e.g., wiring 86b and wiring 86c). Note that the movable range of the display unit depends on the length of the opening in the circumferential direction. The longer the length of the opening in the circumferential direction, the wider the movable range of the display unit.

[0151] Figure 7B Shown including Figure 7A Example of the structure of the area 101b of the axis 60A in FIG. The axis 60A includes codes 51 to 54. Codes 51 to 54 are used instead of Figure 4A and Figure 4B as well as Figure 6 Conductors 41 to 44 in the circuit board. Specifically, codes 51 to 54 have the function of electrically connecting multiple wirings 86b and multiple wirings 86c via openings 69b[1] and 69c[2]. Codes 51 to 54 are stretchable and ductile, and have high bending resistance, so they can withstand the movement of the interconnected units.

[0152] The above connection method can achieve Figure 1D1 The display device 100 in FIG.

[0153] <Deformation Example>

[0154] One embodiment of the present invention is not limited to Figure 1D1 The display device 100 in FIG. Components of the display device 100 may be appropriately changed depending on circumstances or conditions, or as needed.

[0155] For example, a light emitting portion larger than the light emitting portion 81 of the display unit 80 may be used. Figure 8A The display unit 80A replaces Figure 1A Display unit 80 in FIG. Display unit 80A includes a light-emitting portion 81A, a connection region 82, and a support 83A. Light-emitting portion 81A of display unit 80A has a larger light-emitting area than light-emitting portion 81 of display unit 80. As the light-emitting area of ​​light-emitting portion 81A increases, the area of ​​support 83A in display unit 80A increases.

[0156] Figure 8B The display unit 80A is shown as including a Figure 1D1 The display device 100A includes the display unit 80 of the display device 100. The use of the display unit 80A allows the display device 100A to have a large light-emitting area. Therefore, the display device 100A can have a smaller non-display area (the area outside the light-emitting portion 81) than the display device 100, thereby increasing the light-emitting brightness of the display device 100A.

[0157] Here, a case where the size of the support body 83A of the display unit 80A is increased as much as possible will be described. Figure 8C1 、 Figure 8D1 、 Figure 8E The display unit group 86 is composed of four display units 80, the display unit group 86A is composed of four display units 80A, and the display unit group 86B is composed of four display units 80B. In the display unit group 86B, the support bodies of the display units 80B are so large that the opposing display units 80B touch each other.

[0158] In this specification and other documents, as an indicator of the size of a display unit, the distance between the center of an axis in one connection region and the center of an axis in another connection region in the display unit is defined as the length in the first direction. Furthermore, the width of the display unit in a direction perpendicular to the first direction of the display unit is defined as the length in the second direction.

[0159] Will Figure 8C1 The display unit 80, Figure 8D1 The display unit 80A and Figure 8E The distance between the two connection areas of each of the display units 80B in FIG. 8 (hereinafter referred to as the first direction) is referred to as L. Figure 8C1 The display unit 80, Figure 8D1 The display unit 80A and Figure 8E The lengths of the display units 80B in the second direction are referred to as W1, W2, and W3, respectively. Note that W2 is longer than W1, and W3 is longer than W1. By making the size of the support for the display units 80B as large as possible, W3 becomes the maximum value in the display unit group 86B composed of the display units 80B.

[0160] exist Figure 8E In the display unit group 86B, the opposing display units 80B are in contact with each other, so the length L of the display unit 80B in the first direction is equal to the length W3 of the display unit 80B in the second direction.

[0161] exist Figure 8C1 In the display unit 80 of FIG. 8 , the center of the axis in one connection area is referred to as Z1, and the center of the axis in the other connection area is referred to as Z3. Figure 8C1 In the display unit group 86, the center of the axis in the connecting area of ​​the diagonal Z1 is called Z2. Figure 8D1 In the display unit 80A of FIG. 8 , the center of the axis in one connection area is referred to as Z1, and the center of the axis in the other connection area is referred to as Z3. Figure 8D1 In the display unit group 86A, the center of the axis in the connecting area of ​​the diagonal Z1 is called Z2. Figure 8EIn the display unit 80B, the center of the axis in one connection area is called Z1, and the center of the axis in the other connection area is called Z3. Figure 8E In the display unit group 86B, the center of the axis in the connecting area of ​​the diagonal Z1 is called Z2. Figure 8C1 、 Figure 8D1 and Figure 8E In each of , the angle between the dotted line Z1 - Z2 and the dotted line Z1 - Z3 is referred to as θ.

[0162] Change in such a way that θ has a minimum value Figure 8C1 The shape of the display unit group 86 in FIG, so the display unit group 86 has Figure 8C2 In this case, the angle between the dotted line Z1-Z3 and the dotted line Z1-Z2 is called φ1. Change the value of θ in such a way that θ has a minimum value. Figure 8D1 The shape of the display unit group 86A in FIG, so the display unit group 86A has Figure 8D2 The shape in . At this time, the angle between the dotted line Z1-Z3 and the dotted line Z1-Z2 is called φ2. Note that the angle φ1 is smaller than the angle φ2.

[0163] Note that in Figure 8C2 and Figure 8D2 In order to clearly indicate the angle φ1 and the angle φ2, the dotted line Z1-Z3 and the dotted line Z1-Z2 are extended.

[0164] When the length W1 of the display cells 80 in the display cell group 86 in the second direction is increased, the shape of the display cell group 86 approaches that of the display cell group 86A. In other words, by increasing the length of the display cells in the second direction, the minimum value of the range of angle θ also increases. For the same reason, by increasing the length of the display cells in the second direction, the maximum value of the range of angle θ decreases. In other words, by increasing the length of the display cells in the second direction, the range of angle θ of the display cell group including the display cells can be narrowed.

[0165] Since the opposing display units 80B are in contact with each other, Figure 8E The display unit group 86B in φ cannot change its shape by reducing the angle θ.

[0166] Therefore, when forming the display device 100A using a display unit whose light emitting portion and support body are larger than the light emitting portion 81 and support body 83 of the display unit 80, the length of the display unit in the second direction needs to be shorter than the length of the display unit in the first direction.

[0167] For example, using Figure 9A and Figure 9B Multiple units in Figures 1A to 1C The unit in .

[0168] Figure 9A Region 100a in FIG. 1 includes a support unit 70 and multiple units 30. Note that not all units 30 have the same length, but rather some units 30 have different lengths, and that support unit 70 and each of the multiple units 30 are parallel to each other. Each unit 30 includes a light-emitting portion 81 and a connection region 32. Some units 30 include one or two driver circuit units 91, while others do not.

[0169] Figure 9B Region 100b in FIG. 1 includes multiple cells 31. Note that not all cells 31 have the same length; rather, some cells 31 have different lengths, and multiple cells 31 are parallel to each other. Each cell 31 includes a driver circuit portion 91 and a connection region 32. Some cells 31 include a light-emitting portion 81, while others do not.

[0170] By Figure 9B The connection area 32 of the unit 31 in Figure 9A The support unit 70 and the connection area 32 of the plurality of units 30 are arranged in an overlapping manner and connected by the shaft 62 to the connection area 32, so that Figure 9C The display device 100B in FIG. Figure 1D1 Like the display device 100 in FIG. 1 , this structure can change the shape of the display device 100B to Figure 1D2 The shape of the display device 100 in FIG. 1 is shown in FIG. 1 (this change is not shown). Figure 3B and Figure 3C Shown Figure 1D1 The display device 100 in FIG. 1 includes four units overlapped with each other, but the display device 100B includes two units overlapped with each other and can therefore be housed in a thin housing or the like.

[0171] In the above description, the support unit 70 is described as a component of the display device 100B, but the display device 100B does not need to include the support unit 70 .

[0172] Note that this embodiment mode can be appropriately combined with other embodiment modes and / or examples in this specification.

[0173] (Implementation Method 2)

[0174] In this embodiment, examples of electronic devices each including the display device 100 in Embodiment 1 are described.

[0175] <Application Example 1>

[0176] Figure 10A1 and Figure 10A2Each of the figures shows a signboard 6002 installed on the roof of a building 6001. The signboard 6002 is supported by an iron frame 6003 installed on the roof of the building 6001.

[0177] Here, a case where the signboard 6002 includes the display device 100 in Embodiment 1 is described. Figure 10A1 The sign 6002 in the image can change its shape to Figure 10A2 Thus, the aspect ratio of the billboard can be freely changed according to the content displayed on the billboard.

[0178] <Application Example 2>

[0179] Figure 10B1 and Figure 10B2 Each shows an example of a small digital signage that can be easily transported. Figure 10B1 The digital signage 6100 includes a display unit 6101, a structure 6102, and wheels 6103. The structure 6102 has a structure for supporting the display unit 6101 and a structure provided with wheels 6103. The digital signage 6100 can be transported by rotating the wheels 6103.

[0180] Here, a case where the display portion 6101 includes the display device 100 in Embodiment 1 is described. Figure 10B1 The display portion 6101 in the embodiment can change its shape to Figure 10B2 Thus, the aspect ratio of the display unit can be freely changed according to the content displayed on the display unit.

[0181] <Application Example 3>

[0182] Figure 11A and Figure 11B Each shows an example of a digital signage that can be mounted on a wall. Figure 11A A digital sign 6200A is shown mounted on a wall 6201 .

[0183] Here, a case where the digital signage 6200A includes the display device 100 in Embodiment 1 is described. Figure 11A The digital signage 6200A in the Figure 11B The shape of the digital signage 6200B in FIG. Thus, the aspect ratio of the digital signage can be freely changed according to the content displayed on the digital signage.

[0184] Note that this embodiment mode can be appropriately combined with other embodiment modes and / or examples in this specification.

[0185] (Implementation 3)

[0186] In this embodiment, a display device according to one embodiment of the present invention, which is different from the display device 100 in Embodiment 1, is described.

[0187] <Structure example>

[0188] Figure 12A An example of the structure of a display unit included in a display device according to one embodiment of the present invention is shown. A display unit 250 includes a circuit 251 , and the circuit 251 includes a light emitting unit 252 .

[0189] The circuit 251 is a circuit for making the light emitting portion 252 emit light. Figure 12A A selection signal or a data signal (not shown) input to the circuit 251 can cause the light emitting portion 252 to emit light.

[0190] As the light emitting portion 252 , a transmissive liquid crystal element, an organic EL element, an inorganic EL element, or a nitride semiconductor light emitting diode can be used. Instead of the light emitting portion 252 , a reflective liquid crystal element, an electrophoretic element, or the like can be used.

[0191] The light-emitting portion 252 may also include multiple light-emitting elements. For example, the multiple light-emitting elements may emit three colors of light: red (R), green (G), and blue (B), or four colors of light: red (R), green (G), blue (B), and white (W). In addition, the multiple light-emitting elements may emit a combination of several colors of light, such as red (R), green (G), blue (B), white (W), cyan (C), yellow (Y), and magenta (M), as needed. The light-emitting portion 252 of the display unit 250 does not need to include multiple light-emitting elements and may include a single light-emitting element. For example, the light-emitting portion may emit any of the above colors.

[0192] Figure 12A 、 Figure 12B1 and Figure 12B2 The display unit 250 in the embodiment may be replaced by a pixel. When a pixel is used instead of the display unit 250 in this embodiment, the display unit 250, the circuit 251 and the light emitting unit 252 may also be replaced by a pixel, a pixel circuit and a light emitting element, respectively.

[0193] Note that although Figure 12A 、 Figure 12B1 and Figure 12B2 The display unit 250 has a square shape, but one embodiment of the present invention is not limited thereto. For example, the display unit 250 may have a circular, elliptical, curved, or polygonal shape. Furthermore, the light emitting portion 252 does not need to have a square shape, but may also have a circular, elliptical, curved, or polygonal shape.

[0194] Figure 12B1FIG. 260 is a diagram showing an example of a structure of a display region in a display device according to an embodiment of the present invention. The display region 260A has a two-layer stacked structure, each including a plurality of display units 250. Figure 12B1 In the embodiment, the plurality of display units 250 in the upper layer of the two layers are referred to as display units 250a, and the plurality of display units 250 in the lower layer of the two layers are referred to as display units 250b. Figure 12B1 Wiring connected to the display unit 250a and the display unit 250b is not shown.

[0195] In addition, the display area 260A includes an insulator 240 that is stretchable and translucent. In this specification, etc., a stretchable material refers to a material that can be stretched and has high recovery. In addition, a translucent material refers to a material with high transmittance. The insulator 240 has a two-layer structure of an upper layer and a lower layer. The upper layer of the insulator 240 covers the entire display unit 250a, while the lower layer of the insulator 240 covers the entire display unit 250b. In the insulator 240, the upper layer and the lower layer can be formed using the same material or different materials. In addition, in the insulator 240, the upper layer and / or the lower layer can also be formed using a combination of multiple materials. Alternatively, the insulator 240 can also be formed using a single stretchable and translucent material.

[0196] By stretching the insulator 240 which is elastic and light-transmissive, the area of ​​the display region 260A can be increased. For example, by stretching the insulator 240 in the direction of the arrow, the area of ​​the display region 260A can be increased. Figure 12B1 The shape of the display area 260A in the image is changed to Figure 12B2 The shape of the display area 260B in FIG.

[0197] The insulator 240 can be formed using, for example, vinyl chloride, urethane resin, silicone, or rubber.

[0198] Stretch in the direction of the arrow Figure 12B1 The display area 260A in the display area 260B is expanded, thereby increasing the intervals between adjacent display cells 250a in the upper layer of the display area 260A. Note that when the display area 260A including only the display cells 250a used as pixels is expanded to form the display area 260B, the intervals between adjacent display cells 250a increase, and thus the resolution of the display area 260B decreases.

[0199] Therefore, if Figure 12B1As shown, in addition to the display unit 250a in the upper layer of the display area 260A, a plurality of display units 250b are also provided in the lower layer of the display area 260A. By adopting this structure, when the display area 260A is extended to form the display area 260B, the light-emitting portion 252 of the display unit 250b appears on the display surface side of the display area 260B. In other words, by extending the display area 260A to form the display area 260B, the light-emitting area of ​​the display unit 250b in the lower layer is increased, thereby preventing a reduction in the display quality of the display area 260B. Furthermore, the upper and lower layers of the insulator 240 are preferably formed of materials with different elasticity. By optimizing the elasticity of the materials included in the upper and lower layers, when the display area 260A is extended to form the display area 260B, the light-emitting portion 252 of the display unit 250b can overlap the space between adjacent display units 250a.

[0200] like Figure 12B1 As shown, each of the display units 250b in the lower layer of the display area 260A is preferably arranged to partially overlap with the four display units 250a in the upper layer of the display area 260A. When the display area 260A having this structure is extended to the display area 260B, each of the display units 250b can be arranged with the maximum interval between adjacent display units 250a in the upper layer.

[0201] In addition, the position of the display unit 250b in the lower layer of the display area 260A is not limited to Figure 12B1 For example, when the display area is extended in a predetermined direction, the Figure 13A1 The display area 261A has a structure in which each display unit 250b is provided in the lower layer of the display area 261A so as to overlap a portion of two display units 250a in the upper layer. By extending the insulator 240 in the direction of the arrow in this structure, Figure 13A1 The display area 261A in the Figure 13A2 Display area 261B in.

[0202] In addition, for example, as each of the pixels provided in the lower layer of the display area, it is also possible to use Figure 14A The display unit 255 in FIG. The display unit 255 is smaller than the display unit 250 (display units 250a, 250b) and includes a circuit 256 including a light emitting portion 257. Figure 14B1The display area including the display unit 255 in the lower layer is shown. The display area 262A has a structure in which a plurality of display units 255 in the lower layer overlap with a portion of the display unit 250a in the upper layer. Specifically, the display area 262A has a structure in which some display units 255 in the lower layer overlap with two adjacent display units 250a in the upper layer, and the other display units 255 in the lower layer overlap with four adjacent display units 250a in two rows and two columns in the upper layer. By extending the insulator 240 in the direction of the arrow in this structure, Figure 14B1 The display area 262A in the Figure 14B2 Furthermore, due to the use of display unit 255, display area 262A can include more pixels in the lower layer than the lower layer of display area 260A. Therefore, the light-emitting area of ​​display area 262B obtained by stretching display area 262A can be larger than the light-emitting area of ​​display area 260B obtained by stretching display area 260A. As a result, a reduction in resolution due to stretching is less likely to occur in display area 262A than in display area 260A.

[0203] Next, an example of electrical connection between the plurality of display units 250 included in the display region 260A ( 260B) and lead wires will be described.

[0204] Figure 15A An example of electrical connection between the display unit 250 (250a, 250b) and the wiring in the display area 260A (260B) is shown. In order to clearly show the electrical connection between the display unit 250 (250a, 250b) and the wiring, Figure 15A Schematic diagram showing the wiring in the display area 260B.

[0205] The display area 260A (260B) includes a plurality of signal lines and a plurality of gate lines. Figure 15A 1 , the signal line SLa[1], the signal line SLa[2], the signal line SLb[1], the signal line SLb[2], the gate line GLa[1], the gate line GLa[2], the gate line GLb[1], and the gate line GLb[2] are shown, and the reference numerals of other wirings are omitted. In this specification, the signal line SLa[1] and the signal line SLa[2] are collectively referred to as the signal line SLa, the signal line SLb[1] and the signal line SLb[2] are collectively referred to as the signal line SLb, the gate line GLa[1] and the gate line GLa[2] are collectively referred to as the gate line GLa, and the gate line GLb[1] and the gate line GLb[2] are collectively referred to as the gate line GLb. Figure 15AEach of the signal line SLa, signal line SLb, gate line GLa, and gate line GLb in the circuit may also include multiple wirings. For example, the signal line SLa[1] and the gate line GLa[1] are not composed of a single wiring, but are composed of multiple wirings. Sometimes, the wiring called a signal line can be appropriately replaced with the wiring called a gate line.

[0206] The signal lines SLa and gate lines GLa are electrically connected to the display cells 250a included in the upper layer of the display region 260A (260B), and the signal lines SLb and gate lines GLb are electrically connected to the display cells 250b included in the lower layer of the display region 260A (260B).

[0207] Figure 15B1 Show Figure 15A 260A in the cross-sectional view of the display area, and Figure 15B2 Show Figure 15A A cross-sectional view of the display area 260B in FIG. Figure 15B1 Shown along Figure 15A Cross-sectional view of the display area 260A along the dotted line P1-P2 and the dotted line P3-P4. Figure 15B2 Shown along the way Figure 15A 2. A cross-sectional view of the display area 260B taken along the dotted-dash line P1-P2 and the dotted-dash line P3-P4 is obtained by extending the display area 260A from the display area 260B. Note that the cross-sectional view taken along the dotted-dash line P1-P2 shows only the upper layer of the display area 260A (260B), while the cross-sectional view taken along the dotted-dash line P3-P4 shows only the lower layer of the display area 260A (260B).

[0208] That is, the signal line SLa is electrically connected to the display unit 250a and is therefore included in the upper layer, and the signal line SLb is electrically connected to the display unit 250b and is therefore included in the lower layer. Furthermore, the signal line SLa and the signal line SLb are formed using a conductive material having elasticity, so that Figure 15B1 The display area 260A in the Figure 15B2 Display area 260B in the Figure 15B1 The display area 260A in the Figure 15B2 When the display area 260B is in the middle, the interval between the adjacent display units 250a increases, so the light-emitting area of ​​the light-emitting element of the display unit 250b that overlaps with a part of the interval between the adjacent display units 250a increases.

[0209] Similarly, the gate lines GLa and GLb are formed using a conductive material having elasticity, thereby extending the display area 260A into the display area 260B.

[0210] The method of guiding the wiring in the display area 260A (260B) is not limited to using Figure 15A 、 Figure 15B1 and Figure 15B2 For example, one of the plurality of signal lines SLa in the upper layer and one of the plurality of signal lines SLb in the lower layer may be combined into one wiring. Figure 16A An example of the display area at this time is shown. Figure 16A In the display area 260A (260B), the signal line SLa[1] and the signal line SLb[1] are combined into one signal line SL[1], and the signal line SLa[2] and the signal line SLb[2] are combined into one signal line SL[2]. Note that Figure 16A Among the signal lines shown without reference numerals, one of the signal lines S1a in the upper layer and one of the signal lines SLb in the lower layer are combined into one wiring. Figure 16A 、 Figure 16B1 and Figure 16B2 The signal lines in the display region 260A (260B) are collectively referred to as signal lines SL. Note that the combined wiring in this paragraph refers to wiring formed using one wiring or wiring formed using a plurality of wirings.

[0211] Figure 16B1 yes Figure 16A 260A in the cross-sectional view of the display area, and Figure 16B2 yes Figure 16A A cross-sectional view of the display area 260B in FIG. Figure 16B1 It is along Figure 16A A cross-sectional view of the display area 260A taken along the dashed line Q1-Q2. Figure 16B2 It is along Figure 16A A cross-sectional view taken along a dashed line Q1-Q2 in a display area 260B obtained by extending the display area 260A.

[0212] exist Figure 16A In, such as Figure 16B1 and Figure 16B2 As shown, the signal line SL electrically connects the display unit 250a in the upper layer to the display unit 250b in the lower layer.

[0213] The signal line SL is formed of a conductive material having elasticity, so that Figure 16B1 The display area 260A in the Figure 16B2 Display area 260B in the display area. Figure 16B1 The display area 260A in the Figure 16B2 When the display area 260B is displayed in the middle, the interval between the adjacent display units 250a increases, thereby increasing the light-emitting area of ​​the light-emitting element of the display unit 250b that overlaps with a part of the interval between the adjacent display units 250a.

[0214] Similarly, the gate lines GLa and GLb are formed of a stretchable conductive material, thereby expanding the display area 260A to the display area 260B. Like the signal lines SL, the gate lines GLa and GLb may be combined into a single wiring (not shown).

[0215] Next, an example of a driving circuit for driving the display area 260A ( 260B) will be described.

[0216] Figure 17A The display device 300 includes a display area 260. In addition to the display area 260, the display device 300 also includes a driving area 270 and a driving area 280. Here, the driving area 270 is used as a source driver for driving the display area 260, and the driving area 280 is used as a gate driver for driving the display area 260.

[0217] As another example, the display device 300 may also have a structure in which the driving region 270 is used as a gate driver for driving the display region 260 , and the driving region 280 is used as a source driver for driving the display region 260 .

[0218] The drive region 270 includes a plurality of drive circuit units 271. Some of the drive circuit units 271 are electrically connected to the display unit 250a via signal lines SLa, while others are electrically connected to the display unit 250b via signal lines SLb. The drive circuit units 271 supply signals for an image displayed in the display region 260 to the display region 260 via the signal lines SLa and SLb.

[0219] The plurality of driving circuit units 271 are arranged in parallel, and adjacent driving circuit units 271 are electrically connected to each other by wiring 272. In addition, the number of wirings 272 may be one or more.

[0220] The driving region 280 includes a plurality of driving circuit units 281. Some of the driving circuit units 281 are electrically connected to the display unit 250a via gate lines GLa, while others are electrically connected to the display unit 250b via gate lines GLb. The driving circuit units 281 supply selection signals to the pixels included in the display region 260 via gate lines GLa and GLb.

[0221] The plurality of driving circuit units 281 are arranged in parallel, and adjacent driving circuit units 281 are electrically connected to each other by wiring 282. The number of wirings 282 may be one or two or more.

[0222] Like the signal lines SLa, SLb, gate lines GLa, and GLb, the wirings 272 and 282 are formed using a conductive material having elasticity. Therefore, the wirings 272 and 282 having elasticity can increase the intervals between adjacent drive circuit units 271 and the intervals between adjacent drive circuit units 281. Therefore, when stretched, Figure 17A The display device 300 may have Figure 17B The shape in.

[0223] Although Figure 17A In the embodiment, the driving region 270 includes a plurality of driving circuit units 271, but an embodiment of the present invention is not limited thereto. For example, the driving region 270 may also include one driving circuit unit 271 (not shown). Similarly, in Figure 17A The middle driving region 280 includes a plurality of driving circuit units 281 , but the driving region 280 may also include one driving circuit unit 281 (not shown).

[0224] When the circuit area of ​​driving circuit unit 271 and / or driving circuit unit 281 is increased, driving region 270 and / or driving region 280 may also have a two-layer structure like display region 260. Specifically, in a driving region having a two-layer structure, adjacent driving circuit units partially overlap.

[0225] Figure 18A The drive region 270A and the drive region 280A in the display device 300A each have a two-layer structure. The drive region 270A includes multiple drive circuit units 271A, while the drive region 280A includes multiple drive circuit units 281A. The drive circuit units 271A in the upper layer of the drive region 270A are electrically connected to the display unit 250a via signal lines SLa, while the drive circuit units 271A in the lower layer of the drive region 270A are electrically connected to the display unit 250b via signal lines SLb. Similarly, the drive circuit units 281A in the upper layer of the drive region 280A are electrically connected to the display unit 250a via gate lines GLa, while the drive circuit units 281A in the lower layer of the drive region 280A are electrically connected to the display unit 250b via gate lines GLb.

[0226] Figure 18B1 It is along Figure 18A 2. As described above, in the driving region 270A, adjacent driving circuit units 271A partially overlap each other. Furthermore, adjacent driving circuit units 271A are electrically connected by a wiring 272 having elasticity.

[0227] Note that when the display device 300A is extended, the cross-sectional view along the dashed line R1-R2 is Figure 18B1Change to Figure 18B2 By using Figure 18B1 The driving region 270A having a two-layer structure and the stretchable wiring 272 shown can extend the display device 300A even if the circuit area of ​​the driving circuit unit 271 is large.

[0228] For the description of the extension of the driving region 280A, refer to the description of the extension of the driving region 270A.

[0229] The configuration examples described in this embodiment can be combined with each other as appropriate.

[0230] <Manufacturing Method Example>

[0231] Next, refer to 19A to 19C 、 Figure 20A and Figure 20B 、 Figure 21A and Figure 21B 、 Figure 22 as well as Figure 23 An example of a method for manufacturing the display region 260A will be described.

[0232] First, an insulator 321 is formed on a substrate 311 (see Figure 19A ).

[0233] The substrate 311 can be formed using any of various materials such as glass, quartz, resin, metal, alloy, semiconductor, etc. When the substrate 311 is formed using a flexible material, for example, any of the above materials that is thin enough to be flexible can be used.

[0234] The insulator 321 can be used as a barrier layer to prevent impurities contained in the substrate 311 from diffusing into transistors and display elements formed later. For example, the insulator 321 preferably prevents moisture contained in the substrate 311 during a heating step in the manufacturing process of the display region 260A from diffusing into the transistors and display elements. Therefore, the insulator 321 preferably has high barrier properties.

[0235] As the insulator 321, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used. Furthermore, a stacked layer including two or more of the above insulating films can be used. It is particularly preferred that a silicon nitride film be formed on the substrate 311, and a silicon oxide film be formed on the silicon nitride film.

[0236] The inorganic insulating film is preferably formed at a high temperature because the higher the deposition temperature, the higher the density and barrier properties. The deposition temperature of the insulator 321 is preferably equal to or lower than the upper limit temperature of the substrate 311.

[0237] After the insulator 321 is formed on the substrate 311, circuits and wiring are formed on the insulator 321 (see Figure 19B ).exist Figure 19B In the embodiment, a transistor 401 is formed on a substrate 311.

[0238] There are no particular limitations on the structure of the transistors in display region 260A. For example, planar transistors, staggered transistors, or inversely staggered transistors may be used. Furthermore, top-gate transistors or bottom-gate transistors may be used. Furthermore, gate electrodes may be provided above and below the channel.

[0239] Here, a case where a bottom-gate transistor including the metal oxide 350 is formed as the transistor 401 is described. The metal oxide 350 can be used as a semiconductor layer of the transistor 401. Note that the metal oxide described here can be used as an oxide semiconductor.

[0240] In this embodiment, an oxide semiconductor is used as a semiconductor of the transistor. An oxide semiconductor is a semiconductor material having a wider band gap and lower carrier density than silicon. Therefore, the off-state current of the transistor including the oxide semiconductor in the channel formation region can be reduced.

[0241] The transistor 401 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0242] Here, an example of a specific method of forming the transistor 401 is described.

[0243] First, the conductor 341 is formed over the insulator 321. The conductor 341 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and removing the resist mask.

[0244] The substrate temperature during deposition of the conductive film is preferably room temperature or higher and 350° C. or lower, and more preferably room temperature or higher and 300° C. or lower.

[0245] The conductors included in the display area 260A can each have a single-layer structure or a stacked-layer structure containing a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum or tungsten, or an alloy with these metals as the main component. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium or ITO containing silicon can be used. In addition, for example, a semiconductor such as an oxide semiconductor or polycrystalline silicon whose resistance is reduced by adding impurity elements or a silicide such as nickel silicide can also be used. Similarly, a film containing graphene can also be used. The film containing graphene can be formed by reducing a film containing graphene oxide, for example. A semiconductor such as an oxide semiconductor containing impurity elements can be used. Alternatively, a conductive paste such as silver, carbon or copper or a conductive polymer such as polythiophene can be used to form the conductor. Conductive paste is cheap, so it is preferred. Conductive polymers are preferred because they are easy to apply.

[0246] Next, the insulator 322 is formed over the conductor 341 and the insulator 321. As for a material that can be used for the insulator 322, the inorganic insulating film that can be used for the insulator 321 can be referred to.

[0247] Next, the insulator 322 is formed at a temperature not higher than the upper limit temperature of the substrate 311. The insulator 322 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0248] Next, a metal oxide 350 is formed on the insulator 322 so as to overlap with a portion of the conductor 341. The metal oxide 350 can be formed by forming a metal oxide film, forming a resist mask, etching the metal oxide film, and removing the resist mask.

[0249] The substrate temperature during formation of the metal oxide film is preferably 350° C. or lower, more preferably room temperature to 200° C. or lower, and even more preferably room temperature to 130° C. or lower.

[0250] The metal oxide film can be formed using one or both of an inert gas and an oxygen gas. Furthermore, there are no particular restrictions on the oxygen flow rate (oxygen partial pressure) during the metal oxide film formation step. To achieve a transistor with high field-effect mobility, the oxygen flow rate (oxygen partial pressure) during the metal oxide film formation step is preferably 0% to 30%, more preferably 5% to 30%, and even more preferably 7% to 15%.

[0251] The metal oxide film preferably contains at least indium or zinc, and particularly preferably contains indium and zinc.

[0252] The energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. By using such a metal oxide with a wide energy gap, the off-state current of the transistor can be reduced.

[0253] The metal oxide film can be formed by sputtering, or by PLD, PECVD, thermal CVD, ALD, vacuum evaporation, or the like.

[0254] Next, a conductor 342a and a conductor 342b are formed over the insulator 322 and the metal oxide 350. Note that a portion of the conductor 342a and / or a portion of the conductor 342b may be included in a region overlapping with the metal oxide 350. The conductors 342a and 342b can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and removing the resist mask.

[0255] Note that in the process for forming the conductors 342 a and 342 b , part of the metal oxide 350 may be etched and thinned in a region not covered by the resist mask.

[0256] The substrate temperature during formation of the conductive film is preferably room temperature or higher and 350° C. or lower, and more preferably room temperature or higher and 300° C. or lower.

[0257] The transistor 401 can be manufactured in the above manner. In the transistor 401, part of the conductor 341 is used as a gate, part of the insulator 322 is used as a gate insulating layer, the conductor 342a is used as one of the source and the drain, and the conductor 342b is used as the other of the source and the drain.

[0258] Conductor 343 is formed on insulator 322. Conductor 343 can be formed simultaneously with conductors 342a and 342b. If conductor 343 is formed using a different material from conductors 342a and 342b, conductor 343 is formed separately from conductors 342a and 342b. Conductor 343 serves as wiring that electrically connects display units, components, circuits, and the like. Part of conductor 343 also serves as a terminal for transmitting and receiving electrical signals to and from the outside.

[0259] Next, an insulator 323 is formed to cover the transistor 401. The insulator 323 can be formed in the same manner as the insulator 321.

[0260] An oxide insulating film such as a silicon oxide film or a silicon oxynitride film formed in an atmosphere containing oxygen is preferably used for the insulator 323. An insulating film with low oxygen diffusivity and oxygen permeability, such as a silicon nitride film, is preferably stacked on the silicon oxide film or the silicon oxynitride film. The oxide insulating film formed in an atmosphere containing oxygen can easily release a large amount of oxygen by heating. When the stack including the oxide insulating film that releases oxygen and the insulating film with low oxygen diffusivity and oxygen permeability is heat-treated, oxygen can be supplied to the metal oxide 350. As a result, oxygen vacancies in the metal oxide 350 can be filled and defects at the interface between the metal oxide 350 and the insulator 323 can be repaired, thereby reducing the defect energy level. As a result, a display device with extremely high reliability can be manufactured.

[0261] Next, an insulator 324 is formed over the insulator 323. In a later step, a display element is formed over the insulator 324, so the insulator 324 is preferably used as a planarization layer. For the insulator 324, see the description of the organic insulating film or inorganic insulating film that can be used for the insulator 321.

[0262] The insulator 324 is formed at a temperature lower than or equal to the upper limit temperature of the substrate 311. The insulator 324 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0263] Next, an opening 361 reaching the conductor 342b and an opening 362 reaching the conductor 343 are formed in the insulator 323 and the insulator 324 (see FIG. 1 ). Figure 19C ).

[0264] Then, a conductor 344a is formed on the insulator 324 and on the conductor 342b passing through the opening 361. A portion of the conductor 344a serves as a pixel electrode of the light-emitting element 370 described below. The conductor 344a can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and removing the resist mask.

[0265] At the same time as the conductor 344a is formed, the conductor 344b is formed over the conductor 343 through the opening 362. Note that the conductor 344b does not need to be formed.

[0266] The substrate temperature during formation of the conductive film is preferably room temperature or higher and 350° C. or lower, and more preferably room temperature or higher and 300° C. or lower.

[0267] An insulator 325 is formed to cover the end of the conductor 344a. For the insulator 325, refer to the description of the inorganic insulating film that can be used for the insulator 321. Alternatively, the insulator 325 can be formed using an organic insulating film.

[0268] The insulator 325 is formed at a temperature lower than or equal to the upper limit temperature of the substrate 311. The insulator 325 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0269] Then, in Figure 19C A light emitting element 370 is formed on a substrate for forming Figure 20A ).

[0270] To form the light-emitting element 370 , first, the EL layer 371 is formed over the conductor 344 a and the insulator 325 .

[0271] The EL layer 371 can be formed by evaporation, coating, printing, inkjet printing, or the like. When forming the EL layer 371 for each pixel, evaporation using a shadow mask such as a metal mask or inkjet printing can be used. When the EL layer 371 is shared by some pixels, evaporation without using a metal mask can be used.

[0272] The EL layer 371 can be made of a low-molecular compound, a high-molecular compound, or an inorganic compound.

[0273] Note that for details of the EL layer 371 , refer to the description of the EL layer 1103 in Embodiment 5.

[0274] Next, a conductor 345 is formed over the insulator 325 and the EL layer 371. A portion of the conductor 345 serves as a common electrode of the light-emitting element 370.

[0275] The conductor 345 can be formed by vapor deposition, sputtering, or the like.

[0276] The conductor 345 is formed at a temperature lower than or equal to the upper limit temperature of the substrate 311 and lower than or equal to the upper limit temperature of the EL layer 371. The conductor 345 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0277] A light-transmitting conductor is used as the conductor 345. Examples of the light-transmitting conductor include metal oxides such as indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, indium oxide-tin oxide containing titanium, indium-titanium oxide, and indium oxide containing tungsten oxide and zinc oxide. Indium tin oxide is particularly preferred as the conductor 345.

[0278] The above steps form the light-emitting element 370. The light-emitting element 370 includes a conductor 344a, a portion of which functions as a pixel electrode, and an EL layer 371, a portion of which functions as a common electrode. Note that a top-emission light-emitting element is used as the light-emitting element 370.

[0279] Next, an insulator 326 is formed to cover the conductor 345. The insulator 326 serves as a protective layer to prevent impurities such as water from diffusing into the light-emitting element 370. The light-emitting element 370 is sealed by the insulator 326. After the conductor 345 is formed, the insulator 326 is preferably formed so as not to be exposed to the atmosphere.

[0280] The insulator 326 is formed at a temperature lower than or equal to the upper limit temperature of the substrate 311 and lower than or equal to the upper limit temperature of the light-emitting element 370. The insulator 326 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0281] For example, the insulator 326 preferably includes an inorganic insulating film having a high barrier property that can be used as the insulator 321. Alternatively, a stacked layer including an inorganic insulating film and an organic insulating film can be used.

[0282] The insulator 326 can be formed by ALD or sputtering. ALD and sputtering are preferred because they can form a film at a low temperature. ALD is preferred because it can improve the coverage of the insulator 326.

[0283] The structure in which components up to the insulator 326 are formed over the substrate 311 corresponds to the display unit 250 .

[0284] Below, in order to illustrate an example of a method for manufacturing a display area 260A having a two-layer structure, the display unit 250 in the lower layer is referred to as a display unit 250b, and the display unit 250 in the upper layer is referred to as a display unit 250a[1] and a display unit 250a[2].

[0285] The display unit 250b is provided on the supporting substrate 301 (see Figure 20B ). It is preferable to use an adhesive resin layer to bond the substrate 311 to the supporting substrate 301. Note that, Figure 20B The resin layer is not shown. The supporting substrate 301 is included in the insulator 240 .

[0286] The support substrate 301 is formed using a stretchable material, such as a thermosetting elastomer or a thermoplastic elastomer.

[0287] Next, a conductor 380 is formed on the conductor 344b and the supporting substrate 301 (see Figure 21A ). The conductor 380 corresponds to the signal line or gate line described in the structural example.

[0288] The conductor 380 is preferably stretchable. For example, a conductive paste made of silver, carbon, or copper, or a conductive polymer such as polythiophene can be used as the conductor 380.

[0289] Then, a protective layer 390 is formed on the display unit 250b on the supporting substrate 301 and the substrate 311 (see Figure 21B ). In addition, the protection layer 390 is included in the insulator 240.

[0290] A light-transmitting and stretchable insulator is used as protective layer 390. For example, vinyl chloride or polyurethane resin can be used for protective layer 390. In addition to being a light-transmitting and stretchable insulator, protective layer 390 preferably has adhesion properties sufficient to bond the supporting substrate 301 and the display unit 250b together.

[0291] Next, a substrate 302 is provided on the protective layer 390 (see Figure 22 The substrate 302 is formed using a light-transmitting and stretchable material. The stretchability of the substrate 302 is preferably different from that of the supporting substrate 301. The substrate 302 is included in the insulator 240.

[0292] Next, display unit 250a[1] and display unit 250a[2] (see FIG. 1 ) are formed on substrate 302 in the same manner as display unit 250b. Figure 23 ). Like the display unit 250b, the display unit 250a[1] and the display unit 250a[2] each include a transistor, a light-emitting element, and wiring.

[0293] Display unit 250a[1] and display unit 250a[2] are preferably formed on substrate 302 so that a portion of light emitting element 370 of display unit 250b overlaps a portion of the space between display unit 250a[1] and display unit 250a[2].

[0294] After forming the display unit 250a[1] and the display unit 250a[2], the conductor 381 is formed as a wiring in the same manner as the conductor 380 electrically connected to the display unit 250b. For the material that can be used for the conductor 381, refer to the description of the material that can be used for the conductor 380.

[0295] After forming the conductor 381, a protective layer 391 is formed on the display unit 250a[1] and the display unit 250a[2], the conductor 381, and the substrate 302, similarly to the protective layer 390 formed on the display unit 250b. The material that can be used for the protective layer 391 preferably has a different degree of elasticity from that of the material that can be used for the protective layer 390. The protective layer 391 is included in the insulator 240.

[0296] After forming protective layer 391, substrate 303 is disposed on protective layer 391, similar to substrate 302 disposed on protective layer 390. Substrate 303 can be formed using a light-transmitting and stretchable material. Furthermore, substrate 303, supporting substrate 301, and substrate 302 preferably have different degrees of stretchability. Furthermore, substrate 303 is included in insulator 240. In this example of the method for manufacturing display region 260A, substrate 303 is not required.

[0297] Through the above steps, the display region 260A can be manufactured.

[0298] The display region 261A and the display region 262A can be manufactured in the same manner as the display region 260A by referring to the above-described manufacturing method example.

[0299] Although the display unit 250 is formed on the supporting substrate 301 in this manufacturing method example, the manufacturing method of the display device according to one embodiment of the present invention is not limited thereto.

[0300] For example, before forming the transistor 401, the light-emitting element 370, and the like, the substrate 311 is provided on the supporting substrate 301. In this case, the deposition temperature of the insulator, conductor, metal oxide, and the like included in the display unit 250, and the temperature of the heat treatment performed on the transistor 401 and the like are preferably lower than the upper limit temperature of the supporting substrate 301 and the substrate 311. As another example, an insulator formed by sputtering, pulsed laser deposition (PLD), plasma-enhanced chemical vapor deposition (PECVD), thermal CVD, atomic layer deposition (ALD), vacuum evaporation, or the like may be used instead of the substrate 311 provided on the supporting substrate 301. In this case, the insulator may be formed using a material different from that of the insulator 321 and stacked with the insulator 321, or the insulator may be formed using the same material as the insulator 321 and formed continuously.

[0301] For example, one embodiment of the present invention may employ a manufacturing method in which the display unit 250 is formed on a polyimide film or the like formed on the substrate 311 in advance by applying polyimide or the like as an organic film, and the display unit 250 is peeled off from the polyimide film and transferred to the supporting substrate 301. After the display unit 250 is transferred to the supporting substrate 301, the conductor 380 and the protective layer 390 may be formed. In addition to organic films such as polyimide films, inorganic films such as tungsten films may also be used. Figure 24A The process of placing the display unit 250 peeled from the organic or inorganic film on the supporting substrate 301 is shown. Residues of the organic or inorganic film may adhere to the insulator 321 on the bottom surface of the display unit 250 peeled from the organic or inorganic film.

[0302] After the display unit 250 is peeled off by the above method, the display unit 250 may be transferred to the flexible substrate 315 and the substrate 315 may be bonded to the support substrate 301 (see FIG. Figure 24B In this case, the circuit 251 is located on the substrate 315, so the substrate 315 is preferably formed of a material with low elasticity. This prevents the circuit 251 from being damaged (eg, cracked) due to the expansion of the substrate 315.

[0303] By employing this method, the display unit 250 is formed on a substrate provided with a polyimide film or the like. Therefore, the support substrate 301 and the substrate 315 to which the display unit 250 is transferred do not need to be subjected to the heat treatment required to form the display unit 250. In other words, the temperature for heat treatment of the insulator, conductor, and metal oxide included in the display unit 250 is not limited to the upper temperature limit of the support substrate 301 and the substrate 315 to which the display unit 250 is transferred. Because the support substrate 301 is not affected by the heat treatment required to form the display unit 250, the support substrate 301 can be formed using a material with low heat resistance.

[0304] The manufacturing method example described in this embodiment mode can realize a display device in which display quality is not degraded even when the display region is enlarged due to stretching.

[0305] Note that this embodiment mode can be appropriately combined with other embodiment modes and / or examples in this specification.

[0306] (Implementation 4)

[0307] In this embodiment, an example of an electronic device including the display device 300 in Embodiment 3 is described.

[0308] <Example 1>

[0309] Figure 25A FIG. 7 shows an electronic device including a display device 300. The electronic device 7000 can be used as an information terminal or electronic paper, for example. The electronic device 7000 includes the display device 300. Figure 25A As shown, electronic device 7000 can be stretched by stretching it with finger 7001. Due to its stretchability, electronic device 7000 can be attached to a structure having a curved surface. When electronic device 7000, which includes display device 300 as a light-emitting device, is attached to a structure having a curved surface, electronic device 7000 can be used as a lighting device.

[0310] <Example 2>

[0311] Figure 25BA smartwatch is a type of wearable device. The smartwatch includes a housing 5901, a display portion 5902, operating buttons 5903, a crown 5904, and a strap 5905. The display device 300 can be used in the display portion 5902 of the smartwatch. For example, if the display portion 5902 has a convex surface, a convex display portion 5902 can be obtained by attaching the extended display device 300 to the convex surface.

[0312] <Example 3>

[0313] Figure 25C Shown is a garment with display device 300 attached. Garment 5801 includes a display portion 5802 and the like. Display device 300 can be used for display portion 5802. Because display device 300 can be stretched, it can be attached to stretchable garment 5801. Display portion 5802 can also be used as a lighting device.

[0314] Figure 25C Although the example in which the display unit 5802 is attached to the chest of the clothing 5801 is shown, one embodiment of the present invention is not limited thereto. For example, the display unit 5802 may be attached to the sleeves, the stomach, the back, etc. Figure 25C The clothing 5801 in the figure is a shirt, but the clothing 5801 can also be clothes such as a jacket, underwear and pants, as well as decorations such as shoes, hats and wristbands.

[0315] <Example 4>

[0316] Figure 25D The invention shows a front windshield and its surroundings in a car interior. Figure 25D The display device 300 shown can be used for a display panel 5701 , a display panel 5702 , a display panel 5703 installed on a dashboard, a display panel 5704 installed on a pillar, and the like.

[0317] Display panels 5701 to 5703 can display navigation information, a speedometer, a tachometer, distance traveled, a fuel gauge, a gear indicator, air conditioning settings, and other information. Users can adjust the display content and layout of the display panels as needed, improving design. Display panels 5701 to 5703 can also function as lighting devices.

[0318] By displaying images captured by a camera unit installed on the vehicle body, display panel 5704 can supplement the field of view blocked by pillars (blind spots). In other words, by displaying images captured by a camera unit installed on the outside of the vehicle, blind spots can be supplemented, thereby improving safety. In addition, by displaying images that supplement the parts that the driver cannot see, the driver can confirm safety more naturally and comfortably. Display panel 5704 can also be used as a lighting device.

[0319] <Example 5>

[0320] Figure 26A and Figure 26B Each shows an example of a digital signage that can be mounted on a wall. Figure 26A A digital sign 6300A is shown mounted on a wall 6301 .

[0321] Here, a case where the digital signage 6300A includes the display device 300 in the third embodiment will be described. Figure 26A The digital signage 6300A including the display device 300 changes its shape into Figure 26B The shape of the digital signage 6300B in the embodiment 2 Figure 11A and Figure 11B The digital signage 6200A can be stretched vertically or horizontally, and Figure 26A and Figure 26B The aspect ratio of the digital signage 6300A (6300B) can be freely changed according to the content displayed on the digital signage.

[0322] Note that this embodiment mode can be appropriately combined with other embodiment modes and / or examples in this specification.

[0323] (Implementation 5)

[0324] In this embodiment, referring to 27A to 27D A light-emitting element that can be used for the display unit in Embodiment 1 will be described.

[0325] <Basic Structure of Light-Emitting Element>

[0326] The basic structure of a light emitting element will be described. Figure 27A A light-emitting element including an EL layer having a light-emitting layer between a pair of electrodes is shown. Specifically, the EL layer 1103 is provided between the first electrode 1101 and the second electrode 1102.

[0327] Figure 27B A light-emitting element having a stacked structure (tandem structure) in which a plurality of EL layers ( Figure 27B The two EL layers 1103a and 1103b in FIG. 1 are provided between a pair of electrodes, and the charge generation layer 104 is provided between the EL layers. By using such a tandem light-emitting element, a light-emitting device that can be driven at a low voltage with low power consumption can be obtained.

[0328] The charge generation layer 1104 has the function of injecting electrons into one EL layer (1103a or 1103b) and injecting holes into the other EL layer (1103b or 1103a) when a voltage is applied to the first electrode 1101 and the second electrode 1102. Figure 27B When a voltage is applied so that the potential of the first electrode 1101 is higher than that of the second electrode 1102, electrons are injected from the charge generation layer 1104 into the EL layer 1103a, and holes are injected into the EL layer 103b.

[0329] From the viewpoint of light extraction efficiency, the charge generation layer 1104 preferably has visible light transmittance (specifically, the charge generation layer 1104 has a visible light transmittance of 40% or more). The charge generation layer 1104 functions even if its electrical conductivity is lower than that of the first electrode 1101 or the second electrode 1102 .

[0330] Figure 27C The stacked structure of the EL layer 1103 that can be used in a display device according to one embodiment of the present invention is shown. In this case, the first electrode 1101 serves as an anode. The EL layer 1103 has a structure in which a hole injection layer 1111, a hole transport layer 1112, a light-emitting layer 1113, an electron transport layer 1114, and an electron injection layer 1115 are stacked in this order on the first electrode 1101. Figure 27B In the tandem structure shown, a plurality of EL layers are provided, and the layers in each EL layer are also stacked as described above from the anode side. When the first electrode 1101 is a cathode and the second electrode 1102 is an anode, the stacking order is reversed.

[0331] The light-emitting layer 1113 included in the EL layer (1103, 1103a, and 1103b) includes a light-emitting substance and a plurality of substances that are appropriately combined, thereby being able to obtain a structure of fluorescence and phosphorescence of a desired emission color. The light-emitting layer 1113 may also have a stacked structure having different emission colors. In this case, the light-emitting substances or other substances used in the stacked light-emitting layers may be different from each other. In addition, Figure 27B The multiple EL layers (1103a and 1103b) in the embodiment may also emit different luminescent colors. In this case, the luminescent materials and other materials of each luminescent layer are different from each other.

[0332] In the light-emitting element of one embodiment of the present invention, for example, Figure 27C An optical microcavity resonator (microcavity) structure can be used, in which the first electrode 1101 is a reflective electrode and the second electrode 1102 is a semi-transmissive-semi-reflective electrode, so that the light obtained from the light-emitting layer 1113 in the EL layer 1103 can resonate between the above-mentioned electrodes, and the light obtained from the second electrode 1102 can be enhanced.

[0333] Furthermore, when the first electrode 1101 of the light-emitting element is a reflective electrode having a stacked structure of a reflective conductive material and a light-transmitting conductive material (a transparent conductive film), optical adjustment can be achieved by controlling the thickness of the transparent conductive film. Specifically, when the wavelength of light emitted from the light-emitting layer 1113 is λ, the distance between the first electrode 1101 and the second electrode 1102 is approximately mλ / 2 (where m is a natural number).

[0334] In order to amplify the desired light (wavelength: λ) emitted from the light-emitting layer 1113, the optical distance from the first electrode 1101 to the region (light-emitting region) where the desired light from the light-emitting layer 1113 is emitted, and the optical distance from the second electrode 1102 to the region (light-emitting region) where the desired light from the light-emitting layer 1113 is emitted, are preferably adjusted to approximately (2m'+1)λ / 4 (m' is a natural number). Here, the light-emitting region refers to a region in the light-emitting layer 1113 where holes and electrons recombine.

[0335] By performing optical adjustment, the spectrum of specific monochromatic light obtained from the light-emitting layer 1113 can be narrowed, and light emission with high color purity can be obtained.

[0336] In this case, strictly speaking, the optical distance between the first electrode 1101 and the second electrode 1102 is the total thickness from the reflective region in the first electrode 1101 to the reflective region in the second electrode 1102. However, because it is difficult to accurately determine the positions of the reflective regions in the first electrode 1101 and the second electrode 1102, the above-described effects can be fully achieved even if the reflective regions are set at any positions in the first electrode 1101 and the second electrode 1102. Furthermore, strictly speaking, the optical distance between the first electrode 1101 and the light-emitting layer 1113 that emits the desired light is the optical distance between the reflective region in the first electrode 1101 and the light-emitting region in the light-emitting layer 1113 that emits the desired light. However, because it is difficult to accurately determine the reflective region in the first electrode 1101 and the light-emitting region in the light-emitting layer that emits the desired light, the above-described effects can be fully achieved even if the reflective region and the light-emitting region are set at any positions in the first electrode 1101 and the light-emitting layer that emits the desired light.

[0337] Figure 27C The light-emitting element in the device has a microcavity structure, so even if the same EL layer is used, light of different wavelengths (monochromatic light) can be extracted. As a result, there is no need to apply separate coatings (for example, R, G, B) to obtain different luminous colors. This makes it easy to achieve high resolution. In addition, it can be combined with a coloring layer (color filter). Furthermore, the luminous intensity in the front direction with a specific wavelength can be increased, thereby reducing power consumption.

[0338] In the light-emitting element of one embodiment of the present invention, at least one of the first electrode 1101 and the second electrode 1102 is a light-transmitting electrode (for example, a transparent electrode or a semi-transmitting-semi-reflecting electrode). In the case where the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In the case where the light-transmitting electrode is a semi-transmitting-semi-reflecting electrode, the visible light reflectance of the semi-transmitting-semi-reflecting electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0339] In the light-emitting element of one embodiment of the present invention, when one of the first electrode 1101 and the second electrode 1102 is a reflective electrode, the reflective electrode has a visible light reflectivity of 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of the electrode is preferably 1×10 -2 Ωcm or less.

[0340] <Specific Structure and Manufacturing Method of Light-Emitting Element>

[0341] The specific structure and manufacturing method of the light emitting element of one embodiment of the present invention will be described. Figure 27D Description Figure 27B The light-emitting element with a series structure and a microcavity structure is shown. Figure 27D In the light-emitting element shown, a reflective electrode is formed as the first electrode 1101, and a semi-transmissive / semi-reflective electrode is formed as the second electrode 1102. This allows for a single-layer structure or a stacked-layer structure using one or more desired electrode materials. Furthermore, the second electrode 1102 is formed using the material selected as described above after the EL layer 1103b is formed. These electrodes can be formed by sputtering or vacuum evaporation.

[0342] First Electrode and Second Electrode

[0343] As materials for the first electrode 1101 and the second electrode 1102, any of the following materials can be appropriately combined if they can satisfy the functions of the above-mentioned electrodes. For example, metals, alloys, conductive compounds, and mixtures thereof can be appropriately used. Specifically, In-Sn oxide (also known as ITO), In-Si-Sn oxide (also known as ITSO), In-Zn oxide, or In-W-Zn oxide can be cited. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), or alloys containing any of the above metals appropriately combined can also be used. In addition, elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), alloys containing any of the above elements in appropriate combination, and graphene, etc. can also be used.

[0344] exist Figure 27D In the light-emitting element shown, when the first electrode 1101 serves as an anode, a hole-injection layer 1111a and a hole-transport layer 1112a of the EL layer 1103a are sequentially deposited on the first electrode 1101 by vacuum deposition. After the EL layer 1103a and the charge generation layer 1104 are formed, a hole-injection layer 1111b and a hole-transport layer 1112b of the EL layer 1103b are sequentially deposited on the charge generation layer 1104 in the same manner as described above.

[0345] Hole injection layer and hole transport layer

[0346] The hole injection layer (1111a, 1111b) injects holes from the first electrode 1101 of the anode into the EL layer (1103a, 1103b), and contains a material with a high hole injection property.

[0347] Examples of materials with high hole-injection properties include transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Furthermore, any of the following materials can be used: phthalocyanine compounds such as phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (abbreviated as CuPc); aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviated as DNTPD); and polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS).

[0348] Alternatively, a composite material comprising a hole-transporting material and an acceptor material (electron acceptor material) may be used as a material with high hole-injection properties. In this case, the acceptor material extracts electrons from the hole-transporting material, generating holes in the hole-injection layer (1111a, 1111b), which are then injected into the light-emitting layer (1113a, 1113b) via the hole-transporting layer (1112a, 1112b). Furthermore, each of the hole-injection layers (1111a, 1111b) may be formed as a single-layer structure comprising a composite material comprising a hole-transporting material and an acceptor material (electron acceptor material), or as a stacked-layer structure comprising a layer comprising a hole-transporting material and a layer comprising an acceptor material (electron acceptor material).

[0349] The hole-transporting layers (1112a, 1112b) transport holes, which are injected from the first electrode 1101 through the hole-injection layers (1111a, 1111b) into the light-emitting layers (1113a, 1113b). Furthermore, each of the hole-transporting layers (1112a, 1112b) contains a hole-transporting material. The hole-transporting material in the hole-transporting layers (1112a, 1112b) preferably has a HOMO level that is the same as or close to the HOMO level of the hole-injection layers (1111a, 1111b).

[0350] Examples of acceptor materials for the hole injection layer (1111a, 1111b) include oxides of metals belonging to Groups 4 to 8 of the periodic table. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide can be mentioned. Among them, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, organic acceptors such as quinone dimethane derivatives, tetrachlorobenzoquinone derivatives, and hexaazatriphenylene derivatives can be used. Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as: HAT-CN), etc. can be used.

[0351] The hole transport material used for the hole injection layer (1111a, 1111b) and the hole transport layer (1112a, 1112b) preferably has 10 -6 cm 2 In addition, other substances can be used as long as they have higher hole-transporting properties than electron-transporting properties.

[0352] Preferred hole transport materials are π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives and indole derivatives) or aromatic amine compounds, examples of which include: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)- Triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 3-[4-(9-phenanthrenyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviated as PCBiF), N-(1,1'-biphenyl-4-yl)-N-[4-( 9-phenyl-9II-carbazol-3-yl)phenyl]-9,9-dimethyl-9II-fluoren-2-amine (abbreviated as: PCBBiF), 4,4'-diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9 Compounds having an aromatic amine skeleton, such as N-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviated as: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviated as: PCBASF), 4,4',4"-tris(carbazol-9-yl)triphenylamine (abbreviated as: TCTA), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviated as: TDATA), and 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviated as: MTDATA);1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzTP), PCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviated as PCzPCN1), 1,3,5-tris[4-(N-carbazol-3-yl)phenyl]benzene (abbreviated as TCPB), 9-[4-(10-phenyl-9- compounds having a carbazole skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), Compounds having a thiophene skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II).

[0353] Furthermore, high molecular weight compounds such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can also be used.

[0354] Note that when used for the hole injection layer (1111a, 1111b) and the hole transport layer (1112a, 1112b), the hole transport material is not limited to the above examples and may be one or a combination of various known materials.

[0355] Then, in Figure 27DIn the light-emitting element shown, the light-emitting layer 1113a is formed on the hole-transport layer 1112a in the EL layer 1103a by vacuum evaporation. Furthermore, after the EL layer 1103a and the charge-generating layer 1104 are formed, the light-emitting layer 1113b is formed on the hole-transport layer 1112b in the EL layer 1103b by vacuum evaporation.

[0356] Luminous Layer

[0357] Each of the light-emitting layers (1113a, 1113b) contains a light-emitting substance. As the light-emitting substance, substances that emit light in blue, purple, blue-purple, green, yellow-green, yellow, orange, red, and the like are appropriately used. When multiple light-emitting layers (1113a, 1113b) are formed using different light-emitting substances, different light-emitting colors can be exhibited (for example, complementary colors can be combined to produce white light). Furthermore, a stacked structure can be employed in which a single light-emitting layer contains two or more light-emitting substances.

[0358] The light-emitting layers (1113a, 1113b) may each contain one or more organic compounds (host material, auxiliary material) in addition to the light-emitting substance (guest material). As one or more organic compounds, one or both of the hole-transporting material and the electron-transporting material described in this embodiment can be used.

[0359] There are no particular limitations on the luminescent materials that can be used in the luminescent layers (1113a, 1113b), and luminescent materials that convert singlet excitation energy into light in the visible light region or triplet excitation energy into light in the visible light region can be used. Examples of such luminescent materials are given below.

[0360] As a luminescent substance that converts singlet excitation energy into luminescence, a substance that emits fluorescence (fluorescent material) can be cited. Examples of substances that emit fluorescence include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred because they have a high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviated as: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviated as: 1,6FrAPrn), Phenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03).

[0361] In addition, 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviated as PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviated as PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviated as YGA2 S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviated as: PCAPA), 4-(10-phenyl- 9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBAPBA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviated as: TBP), N,N"-(2-tert-butylanthracene-9,10-diyldi-4 ... , 1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9II-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), etc.

[0362] Examples of light-emitting substances that convert triplet excitation energy into light emission include substances that emit phosphorescence (phosphorescent materials) and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0363] Examples of phosphorescent materials include organic metal complexes, metal complexes (platinum complexes), and rare earth metal complexes. Since each of these materials exhibits different emission colors (emission peaks), any one of them can be appropriately selected as needed.

[0364] Examples of phosphorescent materials that emit blue light or green light and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following.

[0365] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazol-3-yl)iridium(III) (abbreviated as [Ir(Mptz)3]) , tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPr5btz)3]), etc. having a 4H-triazole skeleton; tris[3-methyl-1-(2 -methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]); fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]); and bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviated as: FIr6), bis [2- (4', 6'-difluorophenyl) pyridinium-N, C 2’ ] iridium (III) picolinate (abbreviated as: FIrpic), bis{2-[3', 5'-bis(trifluoromethyl)phenyl]pyridinium-N, C 2’ Iridium(III) picolinate (abbreviated as [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]Organometallic complexes such as iridium (III) acetylacetonate (abbreviated as FIr(acac)) with phenylpyridine derivatives having electron-withdrawing groups as ligands.

[0366] Examples of phosphorescent materials that emit green light or yellow light and have an emission spectrum with a peak wavelength of 495 nm to 590 nm include the following.

[0367] For example, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)] cac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviated as [Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinyl)iridium(III) (abbreviated as [Ir(dppm)2(acac)]), etc.; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]), etc.; tris(2-phenylpyridinium-N,C 2’ )iridium (III) (abbreviated as [Ir(ppy)3]), bis(2-phenylpyridinium-N, C 2’ )iridium(III) acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinolinolato)iridium(III) acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinolinolato)iridium(III) (abbreviated as [Ir(bzq)3]), tris(2-phenylquinolinolato-N,C 2′ )iridium (III) (abbreviated as [Ir(pq)3]), bis(2-phenylquinoline-N, C 2’ ) iridium (III) acetylacetonate (abbreviated as [Ir(pq)2(acac)]) and other organometallic iridium complexes with a pyridine skeleton; bis(2,4-diphenyl-1,3-oxazole-N,C 2’ ) iridium (III) acetylacetonate (abbreviated as [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridine-N,C 2’Iridium(III) acetylacetonate (abbreviated as [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazole-N,C 2’ ) iridium (III) acetylacetonate (abbreviated as: [Ir(bt)2(acac)]) and other organic metal complexes; tris(acetylacetonate)(monophenanthroline)terbium (III) (abbreviated as: [Tb(acac)3(Phen)] and other rare earth metal complexes.

[0368] Examples of phosphorescent materials that emit yellow light or red light and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following.

[0369] For example, (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), etc. can be mentioned. Organic metal complexes with pyrimidine skeletons; (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethane)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviated as [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviated as [Ir(dmdppr-dmCP)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato]-N, C 2’ ]iridium (III) (abbreviated as [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato)-N,C 2’]iridium (III) (abbreviated as [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium (III) (abbreviated as [Ir(Fdpq)2(acac)]), etc.; tris(1-phenylisoquinoline-N,C 2’ )iridium (III) (abbreviated as [Ir(piq)3]), bis(1-phenylisoquinoline-N, C 2’ ) iridium (III) acetylacetonate (abbreviated as: [Ir(piq)2(acac)]) and other organic metal complexes having a pyridine skeleton; 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (abbreviated as: [PtOEP]) and other platinum complexes; and tris(1,3-diphenyl-1,3-propanedione (propanedionato))(monophenanthroline)europium (III) (abbreviated as: [Eu(DBM)3(Phen)]), tris[1-(2-thiophenoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium (III) (abbreviated as: [Eu(TTA)3(Phen)] and other rare earth metal complexes.

[0370] As the organic compound (host material, auxiliary material) used for the light-emitting layer (1113a, 1113b), one or more substances having a larger energy gap than the light-emitting substance (guest material) are selected and used.

[0371] When the luminescent substance is a fluorescent material, it is preferred to use an organic compound with a large energy level of a singlet excited state and a small energy level of a triplet excited state. For example, it is preferred to use an anthracene derivative or a tetracene derivative. Specific examples include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as: CzPA), 7-[4-(10-phenyl-9-anthracenyl)phenyl]-7H-dibenzo[c ,g]carbazole (abbreviated as: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthracenyl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviated as: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviated as FLPPA), 5,12-diphenyltetracene, and 5,12-bis(biphenyl-2-yl)tetracene.

[0372] When the luminescent material is a phosphorescent material, it is preferred to select an organic compound whose triplet excitation energy is greater than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the luminescent material. In this case, heteroaromatic compounds such as zinc or aluminum metal complexes, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, and phenanthroline derivatives, or aromatic amines, carbazole derivatives, etc. can be used.

[0373] Specific examples include metal complexes such as tris(8-hydroxyquinolinolato)aluminum(III) (abbreviated as Alq), tris(4-methyl-8-hydroxyquinolinolato)aluminum(III) (abbreviated as Almq3), bis(10-hydroxybenzo[h]quinolinolato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-hydroxyquinolinolato)(4-phenylphenol)aluminum(III) (abbreviated as BAlq), bis(8-hydroxyquinolinolato)zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO), and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ); 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 1,3 -bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviated as OXD-7), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), 2,2',2"-(1,3,5-phenyltriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviated as TPBI), bathophenanthroline (abbreviated as BPhen), bathocuproin (abbreviated as BCP), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBphen), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviated as CO11) and other heterocyclic compounds; aromatic amine compounds such as NPB, TPD and BSPB.

[0374] In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, (chrysene) derivatives, dibenzo[g,p] Condensed polycyclic aromatic compounds such as derivatives. Specifically, 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviated as PCAPBA), 2PCAPA, 6,12-dimethoxy-5,11-diphenyl DBC1, 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as: CzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviated as: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviated as: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviated as: t-BuDNA), 9,9'-bianthracene (abbreviated as: BANT), 9,9'-(stilbene-3,3'-diyl)phenanthrene (abbreviated as: DPNS), 9,9'-(stilbene-4,4'-diyl)phenanthrene (abbreviated as: DPNS2) and 1,3,5-tri(1-pyrenyl)benzene (abbreviated as: TPB3), etc.

[0375] When multiple organic compounds are used for the light-emitting layer (1113a, 1113b), it is preferred to use a compound that forms an exciplex and a light-emitting substance in combination. In this case, various organic compounds can be used in combination as appropriate, but in order to efficiently form an exciplex, it is particularly preferred to combine a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material). As the hole transport material and the electron transport material, specifically, any material described in this embodiment can be used.

[0376] TADF materials are materials that can use tiny amounts of thermal energy to up-convert a triplet excited state to a singlet excited state (reverse intersystem crossing) and efficiently produce luminescence (fluorescence) from the singlet excited state. TADF can be efficiently obtained under the following conditions: the energy difference between the triplet excited energy level and the singlet excited energy level is greater than 0 eV and less than 0.2 eV, preferably greater than 0 eV and less than 0.1 eV. The delayed fluorescence exhibited by TADF materials refers to luminescence whose spectrum is the same as that of general fluorescence but whose lifetime is very long. This lifetime is 10 -6 More than 10 seconds, preferably 10 -3 seconds or more.

[0377] Examples of TADF materials include fullerenes or their derivatives, acridine derivatives such as prussin, and eosin. Other examples include metalloporphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (abbreviated as SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviated as SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviated as SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviated as SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviated as SnF2(OEP)), protoporphyrin-tin fluoride complex (abbreviated as SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (abbreviated as PtCl2OEP).

[0378] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviated as PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5 The present invention also provides heterocyclic compounds having π-electron-rich aromatic heterocycles and π-electron-deficient aromatic heterocycles, such as 1,1-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridinium)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviated as ACRSA). In addition, in a substance in which a π-electron-rich aromatic heterocycle and a π-electron-deficient aromatic heterocycle are directly bonded, the donor property of the π-electron-rich aromatic heterocycle and the acceptor property of the π-electron-deficient aromatic heterocycle are both improved, and the energy difference between the singlet excited state and the triplet excited state is reduced, so it is particularly preferred.

[0379] In addition, in the case of using a TADF material, the TADF material may be combined with other organic compounds.

[0380] Then, in Figure 27DIn the light-emitting element shown, an electron-transport layer 1114a is formed over the light-emitting layer 1113a in the EL layer 1103a by vacuum evaporation. Furthermore, after the EL layer 1103a and the charge-generating layer 1104 are formed, an electron-transport layer 1114b is formed over the light-emitting layer 1113b in the EL layer 1103b by vacuum evaporation.

[0381] Electron Transport Layer

[0382] The electron transport layers (1114a, 1114b) transport electrons injected from the second electrode 1102 through the electron injection layers (1115a, 1115b) to the light-emitting layers (1113a, 1113b). In addition, the electron transport layers (1114a, 1114b) each contain an electron transport material. The electron transport material included in the electron transport layers (1114a, 1114b) preferably has a 1×10 - 6 cm 2 In addition, substances other than the above may be used as long as they have higher electron-transporting properties than hole-transporting properties.

[0383] Examples of electron-transporting materials include metal complexes containing quinoline, benzoquinoline, oxazole, or thiazole ligands; oxadiazole derivatives; triazole derivatives; phenanthroline derivatives; pyridine derivatives; and bipyridine derivatives. Furthermore, π-electron-deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can also be used.

[0384] Specifically, metal complexes such as Alq3, tris(4-methyl-8-hydroxyquinoline)aluminum (abbreviated as Almq3), bis(10-hydroxybenzo[h]-quinoline)beryllium (abbreviated as BeBq2), BAlq, bis[2-(2-hydroxyphenyl)-benzoxazole]zinc(II) (abbreviated as Zn(BOX)2), bis[2-(2-hydroxyphenyl)-benzothiazole]zinc (abbreviated as Zn(BTZ)2), 2-(4-biphenyl)-5- (4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as: PBD), OXD-7, 3-(4'-biphenyl)-4-phenyl-5-(4"-tert-butylphenyl)-1,2,4-triazole (abbreviated as: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (abbreviated as: p-EtTAZ), bathophenanthroline (abbreviated as: BPhen), bathocuproin (abbreviated as: B CP), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviated as BzOs), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTBPDBq-II), 2-[4-(3,6- Quinoxaline derivatives and dibenzoquinoxaline derivatives such as 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 7mDBTPDBq-II) and 6-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 6mDBTPDBq-II).

[0385] In addition, high molecular weight compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used.

[0386] Furthermore, the electron transport layer (1114a, 1114b) is not limited to a single layer, and may be two or more layers each containing any of the above-mentioned substances.

[0387] Then, in Figure 27DIn the light-emitting element shown, an electron-injection layer 1115a is formed on the electron-transport layer 1114a in the EL layer 1103a by vacuum deposition. Next, the EL layer 1103a and the charge-generating layer 1104 are formed, and components up to the electron-transport layer 1114b of the EL layer 1103b are formed. Then, the electron-injection layer 1115b is formed on these components by vacuum deposition.

[0388] Electron injection layer

[0389] The electron injection layers (1115a, 1115b) each contain a substance with high electron injection properties. The electron injection layers (1115a, 1115b) can be made of lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2) and lithium oxide (LiO x ) or other alkali metals, alkaline earth metals, or compounds of these metals. Rare earth metal compounds such as erbium fluoride (ErF3) can be used. In addition, electron salts can also be used for the electron injection layer (1115a, 1115b). Examples of electron salts include substances that add electrons to a mixed oxide of calcium and aluminum at a high concentration. In addition, any substance that forms the electron transport layer (1114a, 1114b) as described above can also be used.

[0390] In addition, a composite material formed by mixing an organic compound with an electron donor (donor) can also be used for the electron injection layer (1115a, 1115b). This composite material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent performance in transporting the generated electrons. Specifically, for example, an electron transport material (metal complex, heteroaromatic compound, etc.) used for the electron transport layer (1114a, 1114b) as described above can be used. As an electron donor, any substance that exhibits electron-donating properties for organic compounds can be used. Preferred examples are alkali metals, alkaline earth metals, and rare earth metals. Specifically, lithium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be mentioned. In addition, alkali metal oxides or alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be mentioned. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as: TTF) can also be used.

[0391] For example, in order to amplify light emitted from the light-emitting layer 1113 b, the optical distance between the second electrode 1102 and the light-emitting layer 1113 b is preferably less than one-quarter of the wavelength λ of light emitted from the light-emitting layer 1113 b. In this case, the optical distance can be adjusted by varying the thickness of the electron-transport layer 1114 b or the electron-injection layer 1115 b.

[0392] Charge Generation Layer

[0393] The charge generation layer 1104 has the following function: when a voltage is applied to the first electrode 1101 (anode) and the second electrode 1102 (cathode), electrons are injected into the EL layer 1103a and holes are injected into the EL layer 1103b. The charge generation layer 1104 may have a structure in which an electron acceptor (acceptor) is added to a hole-transporting material, or a structure in which an electron donor (donor) is added to an electron-transporting material. Alternatively, these two structures may be stacked. In addition, by using the above-mentioned materials to form the charge generation layer 1104, an increase in the driving voltage when the EL layers are stacked can be suppressed.

[0394] When the charge generation layer 1104 has a structure in which an electron acceptor is added to a hole transport material, any material described in this embodiment mode can be used as the hole transport material. As the electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, etc. can be used. In addition, oxides of metals belonging to Groups 4 to 8 of the periodic table can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be used.

[0395] In the case where the charge generation layer 1104 has a structure in which an electron donor is added to the electron transport material, any material shown in this embodiment mode can be used as the electron transport material. As an electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 and Group 13 in the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. are preferably used. In addition, organic compounds such as tetrathianaphthacene can also be used as electron donors.

[0396] Substrate

[0397] The light-emitting element in this embodiment mode can be formed on various substrates. Examples of such substrates include semiconductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates containing stainless steel foil, tungsten substrates, substrates containing tungsten foil, flexible substrates, laminated films, and paper or base film containing fibrous materials.

[0398] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES); synthetic resins such as polypropylene; polypropylene; polyester; polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide; aramid; epoxy; inorganic vapor-deposited films; and paper.

[0399] A vacuum process such as an evaporation method or a solution process such as a spin coating method or an inkjet method can be used to manufacture the light-emitting element shown in this embodiment. When the evaporation method is used, a physical vapor deposition method (PVD method) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, vacuum evaporation, or a chemical vapor deposition method (CVD method) can be used. In particular, the functional layers (hole injection layer (1111a, 1111b), hole transport layer (1112a, 1112b), light-emitting layer (1113a, 1113b), electron transport layer (1114a, 1114b), electron injection layer (1115a, 1115b)) and charge generation layer 1104 included in the EL layer of the light-emitting element can be formed by using a vapor deposition method (for example, a vacuum vapor deposition method), a coating method (for example, a dip coating method, a dye coating method, a rod coating method, a spin coating method, a spray coating method), a printing method (for example, an inkjet method, a screen printing (stencil printing) method, an offset printing (lithography) method, a flexographic printing (letterpress printing) method, a gravure printing method, a microcontact printing method, etc.).

[0400] In addition, the materials of the functional layers (hole injection layer (1111a, 1111b), hole transport layer (1112a, 1112b), light-emitting layer (1113a, 1113b), electron transport layer (1114a, 1114b), electron injection layer (1115a, 1115b)) and the charge generation layer 1104 included in the EL layer (1103a, 1103b) in the light-emitting element shown in this embodiment are not limited to the above-mentioned materials. As long as the materials can satisfy the functions of each layer, they can be used in combination. For example, a polymer compound (for example, an oligomer, a dendrimer, a polymer), a medium molecular compound (a compound between a low molecule and a high molecule: a molecular weight of 400 to 4000), an inorganic compound (for example, a quantum dot material), etc. can be used. The quantum dot material can be a colloidal quantum dot material, an alloy quantum dot material, a core-shell quantum dot material, a core-type quantum dot material, etc.

[0401] The structure described in this embodiment mode can be appropriately combined with any structure described in other embodiment modes or examples in this specification.

[0402] (Implementation 6)

[0403] In this embodiment, a light-emitting device which is one embodiment of the present invention is described. Figure 28A The light-emitting device shown is an active matrix light-emitting device in which a transistor (FET) 1202 and light-emitting elements (1203R, 1203G, 1203B, and 1203W) are electrically connected on a first substrate 1201. The light-emitting elements (1203R, 1203G, 1203B, and 1203W) include a common EL layer 1204 and each employs a microcavity structure in which the optical distance between electrodes is adjusted according to the color emitted by each light-emitting element. This light-emitting device is a top-emitting light-emitting device in which light is emitted from the EL layer 1204 through color filters (1206R, 1206G, and 1206B) formed on a second substrate 1205.

[0404] Figure 28A The light-emitting device shown is manufactured using the first electrode 1207 as a reflective electrode and the second electrode 1208 as a semi-transmissive-semi-reflective electrode. Regarding the electrode materials used for the first electrode 1207 and the second electrode 1208, any of the other embodiments can be appropriately referred to.

[0405] exist Figure 28A For example, when the light-emitting element 1203R is used as a red light-emitting element, the light-emitting element 1203G is used as a green light-emitting element, the light-emitting element 1203B is used as a blue light-emitting element, and the light-emitting element 1203W is used as a white light-emitting element, Figure 28B As shown, the interval between the first electrode 1207 and the second electrode 1208 in the light-emitting element 1203R is adjusted to an optical distance 1211R, the interval between the first electrode 1207 and the second electrode 1208 in the light-emitting element 1203G is adjusted to an optical distance 1211G, and the interval between the first electrode 1207 and the second electrode 1208 in the light-emitting element 1203B is adjusted to an optical distance 1211B. Figure 28B As shown, optical adjustment can be performed by stacking a conductive layer 1207R on the first electrode 1207 of the light-emitting element 1203R and stacking a conductive layer 1207G on the first electrode 1207 of the light-emitting element 1203G.

[0406] Color filters (1206R, 1206G, 1206B) are formed on the second substrate 1205. The color filters transmit wavelengths in a specific region of visible light and block wavelengths in a specific region. Figure 28AAs shown, by providing a color filter 1206R that transmits only the red wavelength region at a position overlapping with the light-emitting element 1203R, red light can be obtained from the light-emitting element 1203R. In addition, by providing a color filter 1206G that transmits only the green wavelength region at a position overlapping with the light-emitting element 1203G, green light can be obtained from the light-emitting element 1203G. In addition, by providing a color filter 1206B that transmits only the blue wavelength region at a position overlapping with the light-emitting element 1203B, blue light can be obtained from the light-emitting element 1203B. Note that the light-emitting element 1203W can emit white light without providing a filter. In addition, a black layer (black matrix) 1209 can also be provided at the end of each color filter. The color filters (1206R, 1206G, 1206B) and the black layer 1209 can also be covered by a protective layer formed using a transparent material.

[0407] Although Figure 28A The light emitting device in the embodiment has a structure for extracting light from the second substrate 1205 side (top emission structure), but may also be as shown in FIG. Figure 28C As shown in FIG. 1 , a structure (bottom emission structure) is adopted in which light is extracted from the first substrate 1201 side on which the FET 1202 is formed. In the case of a bottom emission type light emitting device, the first electrode 1207 is used as a semi-transmissive and semi-reflective electrode, and the second electrode 1208 is used as a reflective electrode. As the first substrate 1201, a substrate having at least light transparency is used. Figure 28C As shown, the color filters (1206R', 1206G', 1206B') are arranged closer to the first substrate 1201 than the light emitting elements (1203R, 1203G, 1203B).

[0408] exist Figure 28A In the embodiment of the present invention, the light-emitting element is a red light-emitting element, a green light-emitting element, a blue light-emitting element, and a white light-emitting element, but the light-emitting element of the display device of one embodiment of the present invention is not limited to the above description, and a yellow light-emitting element or an orange light-emitting element can also be used. With regard to the materials used to manufacture the EL layer (light-emitting layer, hole injection layer, hole transport layer, electron transport layer, electron injection layer, charge generation layer, etc.) of each light-emitting element, reference can be made to the description in any other embodiment as appropriate. In this case, it is necessary to appropriately select a color filter according to the light-emitting color of the light-emitting element.

[0409] By adopting the above structure, a light-emitting device including a light-emitting element that emits light in a plurality of colors can be manufactured.

[0410] This embodiment mode can be implemented in combination with any of the other embodiment modes and examples in this specification as appropriate.

[0411] [Example 1]

[0412] In this embodiment, a sample including a glass substrate on a supporting substrate having elasticity is described.

[0413] Figure 29 The sample in which the substrate 503 is provided on the support substrate 501 with an interval MMT is schematically shown. Note that each of the support substrate 501 and the substrate 503 corresponds to the reference substrate 501. Figure 20B The supporting substrate 301 and the display unit 250b in the manufacturing method example described in Embodiment 3.

[0414] The adhesive 502 is located in the region where the substrate 503 overlaps the support substrate 501. The adhesive 502 is used to bond the substrate 503 to the support substrate 501.

[0415] Figure 30A This is a photograph of a sample in which a silicone rubber sheet (KS05000 manufactured by Kyowa Industry Co., Ltd.) was used as a supporting substrate 501, Super X No. 8008 (manufactured by CEMEDINE Co., Ltd.) was used as an adhesive 502, and a glass substrate (AN100, manufactured by Asahi Glass Co., Ltd.) was used as a substrate 503. Each of the substrates 503 was MMT-processed into a 10 mm × 10 mm square on the supporting substrate 501 at intervals of 10 mm and arranged in a matrix of four rows and three columns.

[0416] Figure 30B It stretches in the s direction Figure 30A The image of the sample in . Figure 30C It stretches in the t direction Figure 30A The image of the sample in . Figure 30D It stretches in the u direction Figure 30A Note that FIG. 30B to FIG. 30D Each represents a sample that was stretched by the hand of the experimenter by 10 mm or more and 20 mm or less.

[0417] like FIG. 30B to FIG. 30D As shown, the substrate 503 is stretched in a manner that does not separate from the supporting substrate 501. Figure 30A The samples in .

[0418] In addition, the structure described in this embodiment can be appropriately combined with any structure described in other embodiment modes.

[0419] Explanation of symbols

[0420] SLa[1]: signal line, SLa[2]: signal line, SLb[1]: signal line, SLb[2]: signal line, SL[1]: signal line, SL[2]: signal line, GLa[1]: gate line, GLa[2]: gate line, GLb[1]: gate line, GLb[2]: gate line, 30: unit, 31: unit, 32: connection area, 41: conductor, 41a: disk, 41b: pillar, 41c: disk, 42: conductor, 43: conductor, 44: conductor, 44a: disk, 44b: cylinder, 44c: disk, 45: conductor, 46: conductor, 47: conductor, 48: conductor, 51: code, 52: code, 53: code, 54: code , 60: axis, 60A: axis, 60a: axis, 60b: axis, 60c: axis, 60d: axis, 60e: axis, 60f: axis, 60g: axis, 60h: axis, 60i: axis, 61: axis, 62: axis, 69b[1]: opening, 69b[2]: opening, 69c[1]: opening, 69c[2]: opening, 70: supporting unit, 72: connecting area, 73: supporting body, 80: display unit, 80A: display unit, 80B: display unit, 80a: display unit, 80b: display unit, 80c: display unit, 80d: display unit, 81: display part, 81A: display part, 82: connecting area, 82a: connecting area, 82b: connecting area, 82c: connecting area domain, 82d: connection region, 82e: connection region, 82f: connection region, 82g: connection region, 82h: connection region, 83: support body, 83A: support body, 85: display unit group, 85A: display unit group, 85B: display unit group, 85C: display unit group, 86: display unit group, 86A: display unit group, 86B: display unit group, 80[1]: display unit, 80[2]: display unit, 80[3]: display unit, 80[4]: display unit, 86b: wiring, 86c: wiring, 90: driving circuit unit, 91: driving circuit part, 92: connection region, 93: support body, 100: display device, 100a: region, 100b: region, 10 0A: Display device, 100B: Display device, 101: Display area, 101a: Area, 101b: Area, 102A: Drive area, 102B: Drive area, 105a: Area, 105b: Area, 106: Area, 240: Insulator, 250: Display unit, 250a: Display unit, 250a[1]: Display unit, 250a[2]: Display unit, 250b: Display unit, 251: Circuit, 252: Light-emitting portion, 255: Display unit, 256: Circuit, 260: Display area, 260A: Display area, 260B: Display area, 261A: Display area, 261B: Display area, 262A: Display area, 262B: Display area,270: Driving region, 270A: Driving region, 271: Driving circuit unit, 272: Wiring, 280: Driving region, 280A: Driving region, 281: Driving circuit unit, 282: Wiring, 301: Support substrate, 302: Substrate, 303: Substrate, 311: Substrate, 315: Substrate, 321: Insulator, 322: Insulator, 323: Insulator, 324: Insulator, 325: Insulator, 326: Insulator, 341: Conductor, 342a: Conductor, 342b: Conductor, 343: Conductor, 344a: Conductor, 344b: Conductor, 345: Conductor, 350: Metal oxide, 361: Opening, 362: Opening, 370: Optical element, 380: Conductor, 381: Conductor, 390: Protective layer, 391: Protective layer, 401: Transistor, 501: Support substrate, 502: Binder, 503: Substrate, 1101: Electrode, 1102: Electrode, 1103: EL layer, 1103a: EL layer, 1103b: EL layer, 1104: Charge generation layer, 1111: Hole injection layer, 1111a: Hole injection layer, 1111b: Hole injection layer, 1112: Hole transport layer, 1112a: Hole transport layer, 1112b: Hole transport layer, 1113: Light-emitting layer, 1113a: Light-emitting layer, 1113b: Light-emitting layer, 1114: Electron transport layer, 1114a: Electron transport layer, 11 14b: Electron transport layer, 1115: Electron injection layer, 1115a: Electron injection layer, 1115b: Electron injection layer, 1201: Substrate, 1202: FET, 1203R: Light-emitting element, 1203G: Light-emitting element, 1203B: Light-emitting element, 1203W: Light-emitting element, 1204: EL layer, 1205: Substrate, 1206R: Color filter, 1206R': Color filter, 1206G: Color filter, 1206G': Color filter, 1206B: Color filter, 1206B': Color filter, 1207: Electrode, 1208: Electrode, 1209: Black layer, 1210R: Conductive layer, 1210G: Conductive layer, 1211R: Optical distance, 1211G: Optical distance, 1211B: Optical distance, 5701: Display panel, 5702: Display panel, 5703: Display panel, 5704: Display panel, 5801: Clothing, 5802: Display unit, 5901: Frame, 5902: Display unit, 5903: Operation button, 5904: Crown, 5905: Strap, 6001: Building, 6002: Signboard, 6002A: Signboard, 6003: Steel frame, 6100: Digital signage, 6101: Display unit, 6102: Structure, 6103: Wheel, 6200A: Digital signage, 6200B: Digital signage, 6201: Wall, 6300A: Digital signage, 6300B: Digital signage, 6301: Wall,7000: Electronic equipment, 7001: Fingers. ,

[0421] This application is based on Japanese Patent Application No. 2016-248914 filed with the Japan Patent Office on December 22, 2016, and Japanese Patent Application No. 2017-159979 filed with the Japan Patent Office on August 23, 2017, the entire contents of which are incorporated herein by reference.

Claims

1. A display device, comprising: a plurality of first units arranged parallel to each other; as well as a plurality of second units arranged parallel to each other; Each of the first units includes at least one light-emitting portion and a plurality of connection areas. wherein, in each of the first units, the connection regions and the light emitting portions are alternately arranged to form a straight line, Each of the second units includes at least one light-emitting portion and a plurality of connection areas, wherein, in each of the second units, the connection regions and the light emitting portions are alternately arranged to form a straight line, wherein the connection region of the second unit overlaps and is electrically connected to the connection region of the first unit, such that the first unit and the second unit intersect each other; wherein the first unit and the second unit are configured to form a display area, and Wherein, the aspect ratio of the display device is variable.

2. The display device according to claim 1, in, Some of the first units include at least one driving circuit section, and Each of the second units includes at least one driving circuit portion. 3 . The display device according to claim 2 , further comprising a third unit including two connection regions and a driving circuit portion.

4. The display device according to claim 1, in, The lengths of the first units are different from each other, and The lengths of the second units are different from each other.

5. The display device according to claim 1, wherein The light emitting portion includes a light emitting element.

6. A display device comprising: multiple display units; and Multiple axes, wherein the plurality of display units are configured to form a display area, Wherein, each of the plurality of display units comprises: a light-emitting portion; and connection area, including openings, wherein the connection region of the first display unit of the display unit is electrically connected to the connection region of the second display unit of the display unit through the first axis of the axis, wherein the first axis of the shaft passes through the opening in the connection area of ​​the first display unit of the display unit and the second display unit of the display unit, wherein the connection areas of the first display unit of the display unit and the second display unit of the display unit are configured to overlap each other, wherein each of the shafts comprises an electrical conductor, wherein the electrical conductor in the first axis of the axis is electrically connected to a wiring in the first display unit of the display unit and a wiring in the second display unit of the display unit, wherein an angle between the first display unit of the display unit and the second display unit of the display unit is configured to be changed, and The aspect ratio of the display device can be changed according to the change of the angle.

7. The display device according to claim 6, in, The shaft includes a plurality of openings, wherein the conductor and the wiring are connected through the opening of the shaft, and The range of the change in the angle depends on the length of the opening of the shaft.

8. The display device according to claim 6, in, The conductor has stretchability and ductility, and Wherein, the conductor is covered by an insulator.

9. The display device according to claim 6, further comprising a plurality of driving units, in, Each of the plurality of driving units includes a driving circuit portion and a connection area, wherein the driving circuit unit is configured to drive the display area, wherein the connection region of the first driving unit of the driving unit is electrically connected to the connection region of the third display unit of the display unit, and The electrical connection between the first driving unit of the driving unit and the third display unit of the display unit is made through a second axis of the plurality of axes.

10. The display device according to claim 9, wherein An angle between the first driving unit of the driving unit and the third display unit of the display unit is configured to be changed.

11. The display device according to claim 6, wherein The light emitting portion includes a light emitting element.

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