Charged particle beam drawing device and charged particle beam drawing method

Abstract

A charged particle beam drawing device and a charged particle beam drawing method that achieve high productivity and high drawing accuracy. The device uses a deflector to deflect a charged particle beam, and sequentially draws a pattern at a plurality of deflection positions in a sample, and comprises: a storage unit that stores correlation information indicating the relationship between the elapsed time from the start of deflection of the deflector and the positional offset of the emission position of the charged particle beam; an emission position correction unit that uses the adjustment time and emission time of the deflector and the correlation information to obtain a first positional offset corresponding to the nth (n is an integer greater than 2) deflection position in the drawing order of the pattern and a second positional offset corresponding to the n-1th deflection position, adds the first positional offset to the second positional offset to obtain a positional correction amount, and corrects the emission position; and a drawing unit that uses the emission data whose emission position has been corrected to irradiate the nth deflection position with a charged particle beam to draw the pattern.

Description

[0001] Related Applications

[0002] This application claims the priority of Japanese Patent Application No. 2021-043761 (filing date: March 17, 2021) as a basic application, and the present application incorporates all the contents of the basic application by reference. Technical Field

[0003] The present invention relates to a charged particle beam drawing device and a charged particle beam drawing method. Background Art

[0004] With the high integration of LSI, the circuit line width required by semiconductor devices has been miniaturized year by year. In order to form the desired circuit pattern for semiconductor devices, a method is adopted to reduce and transfer the high-precision original pattern formed on quartz to the wafer using a reduced projection exposure device. In order to produce a high-precision original pattern, the so-called electron beam lithography technology is used to form a pattern by exposing the resist with an electron beam drawing device.

[0005] The electron beam drawing device deflects the electron beam by applying a specified voltage to the deflector arranged along the optical path of the electron beam, thereby drawing a pattern on the substrate on the workbench. When the deflector is driven by the output voltage from the DAC (digital analog converter) amplifier, an adjustment time (stabilization time) of the output voltage corresponding to its load is required. Here, if the adjustment time is insufficient, an error will occur in the deflection movement of the electron beam, resulting in a decrease in the drawing accuracy. On the other hand, if the adjustment time is too long, the productivity will decrease. Therefore, it is required to set the adjustment time as short as possible within the range where the drawing accuracy is not reduced. Summary of the invention

[0006] One embodiment of the present invention provides a charged particle beam drawing apparatus and a charged particle beam drawing method that achieve high productivity and high drawing accuracy.

[0007] A charged particle beam drawing device according to one embodiment of the present invention uses a deflector to deflect a charged particle beam, and sequentially draws patterns at multiple deflection positions in a sample, the charged particle beam drawing device comprising: an emission data generating unit, which converts the drawing data into emission data including each emission position and emission time of the charged particle beam; a storage unit, which stores correlation information, the correlation information indicating the relationship between the elapsed time from the start of deflection of the deflector and the position offset of the emission position of the charged particle beam; and an emission position correction unit, which uses the adjustment time of the deflector, the emission time and the correlation information to obtain a A first position offset corresponding to the nth deflection position in the drawing order of the pattern is obtained, and a second position offset corresponding to the n-1th deflection position is obtained using the elapsed time from the start of the deflection and the association information, the first position offset is added to the second position offset to obtain a position correction amount, and based on the position correction amount, an emission position defined by the emission data at the nth deflection position is corrected, wherein n is an integer greater than 2; and a drawing unit, using the emission data whose emission position has been corrected, irradiates the nth deflection position with a charged particle beam to draw the pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 This is a schematic diagram of the structure of a drawing device according to an embodiment of the present invention.

[0009] Figure 2 This is a conceptual diagram for explaining the deflection area.

[0010] Figure 3 is a graph showing an example of temporal changes in adjustment errors.

[0011] Figure 4 a is a graph showing the time variation of the adjustment error in the first deflection region (TF), Figure 4 b is a graph showing the temporal variation of the regulation error in the second deflection region (TF).

[0012] Figure 5 This is a flow chart for explaining the drawing method of this embodiment.

[0013] Description of Reference Numerals

[0014] 50 Transmission data generation unit

[0015] 52. Emission position correction unit

[0016] 54 Drawing control unit

[0017] 100 Drawing Device

[0018] 110 Control Computer

[0019] 150 Drawing

[0020] 160 Control Department

[0021] 208 Main deflector

[0022] 209 Auxiliary deflector

[0023] 216 Auxiliary deflector DETAILED DESCRIPTION

[0024] In the following embodiments, as an example of a charged particle beam, a configuration using an electron beam is described. However, the charged particle beam is not limited to an electron beam, and may be a beam using charged particles such as an ion beam. In addition, as an example of a charged particle beam device, a drawing device for a variable forming mold is described.

[0025] Figure 1 This is a conceptual diagram showing the configuration of a drawing device in the embodiment. Figure 1 In the drawing device 100, a drawing unit 150 and a control unit 160 are provided. The drawing unit 150 includes an electron lens barrel 102 and a drawing chamber 103. An electron gun 201, an illumination lens 202, a blanking deflector (blanker) 212, a blanking aperture 214, a first shaping aperture 203, a projection lens 204, a shaping deflector 205, a second shaping aperture 206, an objective lens 207, a main deflector 208, a sub-deflector 209, and a sub-sub-deflector 216 are arranged in the electron lens barrel 102.

[0026] An XY stage 105 that is movable in at least the XY direction is disposed in the drawing chamber 103. A sample 101 (substrate) to be drawn and coated with a resist is disposed on the XY stage 105. The sample 101 includes a mask for exposure used to manufacture semiconductor devices, a silicon wafer, and the like. The mask includes a mask blank.

[0027] The control unit 160 includes a control computer 110, a memory 112, a deflection control circuit 120, DAC (digital-to-analog converter) amplifiers 130, 132, 134, 136, 138 (deflection amplifiers), and storage devices 140, 142 such as magnetic disk devices. The control computer 110, the memory 112, the deflection control circuit 120, and the storage devices 140, 142 are connected to each other via a bus (not shown).

[0028] The deflection control circuit 120 is connected to DAC amplifiers 130, 132, 134, 136, and 138. The DAC amplifier 130 is connected to the blanking deflector 212. The DAC amplifier 132 is connected to the sub-deflector 209. The DAC amplifier 134 is connected to the main deflector 208. The DAC amplifier 136 is connected to the sub-deflector 216. The DAC amplifier 138 is connected to the shaping deflector 205.

[0029] The control computer 110 includes a transmission data generation unit 50, a transmission position correction unit 52, and a drawing control unit 54. The functions of the transmission data generation unit 50, the transmission position correction unit 52, and the drawing control unit 54 may be constituted by software or hardware. The calculation results of the control computer 110 are stored in the memory 112 each time.

[0030] Figure 2 This is a conceptual diagram used to illustrate the deflection area. Figure 2 In the drawing area 10 of the sample 101, for example, a plurality of stripe areas 20 are virtually divided into rectangular shapes in the y direction by the deflectable amplitude of the main deflector 208. Furthermore, the area where the stripe area 20 is divided along the x direction by the deflectable amplitude of the main deflector 208 becomes the deflection area of ​​the main deflector 208 (main deflection area).

[0031] The main deflection area is virtually divided into a plurality of subfields (SF) 30 in a grid shape according to the deflectable size of the auxiliary deflector 209. Each SF 30 is virtually divided into a plurality of lower subfields (hereinafter referred to as "TF" which means the tertiary deflection field) 40 in a grid shape according to the deflectable size of the auxiliary deflector 216.

[0032] An emission pattern is drawn at each emission position 42 of each TF 40. In this way, by using a three-stage deflector for deflecting the electron beam 200, each deflection region is respectively a main deflection region, SF 30, and TF 40 in descending order of different deflection region sizes.

[0033] The deflection control circuit 120 outputs a digital signal for blanking control to the DAC amplifier 130. The DAC amplifier 130 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the blanking deflector 212. The electron beam 200 is deflected by the deflection voltage, and blanking control of each emission is performed.

[0034] The deflection control circuit 120 outputs a digital signal for shaping deflection to the DAC amplifier 138. The DAC amplifier 138 converts the digital signal into an analog signal, amplifies the signal, and applies the signal as a deflection voltage to the deflector 205. The electron beam 200 is deflected toward a specific position of the second shaping aperture 206 by the deflection voltage, thereby forming an electron beam of a desired size and shape.

[0035] The digital signal for main deflection control is output from the deflection control circuit 120 to the DAC amplifier 134. The DAC amplifier 134 converts the digital signal into an analog signal, and applies the amplified signal to the main deflector 208 as a deflection voltage. The electron beam 200 is deflected by the deflection voltage, and each emitted beam is deflected toward a reference position A (e.g., the center position or the lower left corner position of the SF) of a predetermined subfield (SF) virtually divided in a grid shape. In addition, when drawing is performed while the XY stage 105 is continuously moved, the deflection voltage also includes a tracking deflection voltage that follows the movement of the stage.

[0036] The deflection control circuit 120 outputs a digital signal for sub-deflection control to the DAC amplifier 132. The DAC amplifier 132 converts the digital signal into an analog signal, amplifies the signal, and applies the signal as a deflection voltage to the sub-deflector 209. The electron beam 200 is deflected by the deflection voltage, and each emitted beam is deflected toward a reference position B of the TF 40 (e.g., the center position or the lower left corner position of the TF) that is the minimum deflection area.

[0037] The deflection control circuit 120 outputs a digital signal for sub-deflection control to the DAC amplifier 136. The DAC amplifier 136 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the sub-deflector 216. The electron beam 200 is deflected by the deflection voltage, and each emitted beam is deflected toward each emission position 42 in the TF 40.

[0038] In the drawing device 100, a multi-stage deflector is used to perform drawing processing for each stripe area 20. Here, as an example, a three-stage deflector such as a main deflector 208, a sub-deflector 209, and a sub-sub-deflector 216 is used. The XY table 105 draws the first stripe area 20 in the x direction while continuously moving in the -x direction. Then, after the drawing of the first stripe area 20 is completed, the second stripe area 20 is drawn in the same way or in the opposite direction. Thereafter, the drawing of the third and subsequent stripe areas 20 is performed in the same way.

[0039] The main deflector 208 deflects the electron beam 200 to the reference position A of the SF30 in sequence in a manner following the movement of the XY stage 105. In addition, the sub-deflector 209 deflects the electron beam 200 from the reference position A of each SF30 to the reference position B of the TF40 in sequence. Then, the sub-sub-deflector 216 deflects the electron beam 200 from the reference position B of each TF40 to the emission position 42 of the beam irradiated into the TF40.

[0040] Thus, the main deflector 208, the auxiliary deflector 209 and the auxiliary auxiliary deflector 216 can control different deflection amounts and have deflection areas of different sizes. TF40 is controlled by the smallest deflection amount among the multi-stage deflectors and becomes the smallest deflection area among the deflection areas controlled by these deflectors.

[0041] As described above, each deflector is supplied with an output voltage from a DAC amplifier. When the deflector is driven by the output voltage from the DAC amplifier, an adjustment time (stabilization time) is set, and after the set adjustment time has elapsed, the beam is irradiated to the deflection position. The longer the adjustment time is, the smaller the error in the deflection amount is, but the productivity is deteriorated.

[0042] Figure 3 2 shows an example of the relationship between the time elapsed since the deflection voltage was applied to the auxiliary deflector 209 (the time elapsed since the deflection started) and the error (adjustment error) in the deflection amount of the auxiliary deflector 209. In the range where the adjustment error is small, it can be assumed that the adjustment error changes linearly. In this example, it is assumed that the change in the adjustment error after 30 ns is linear.

[0043] When the time when the adjustment error becomes 0 is represented by A and the adjustment error after 30 ns is represented by B, the adjustment error S of the sub-deflector 209 at the time t after 30 ns is 0 (t) can be represented by the following formula (1), for example.

[0044]

[0045] Figure 4 a shows the change of the adjustment error with time when the deflection is started at time T1 and the beam is deflected to the reference position of a certain TF40 (the first TF40). 1 , Set the total launch time in this TF40 to Shot 1 In the case of the adjustment error in TF40, it can be regarded as a time difference of STL from the deflection start time T1. 1 +Shot 1 / 2 adjustment error E1. STL 1 +Shot 1 / 2 is the middle (exactly the middle) of the launch time. The adjustment error X in the first TF40 1 For example, it can be expressed by formula (3) using the following formula (2).

[0046]

[0047] A i =ΔX i ×GAIN A +OFFSET A

[0048] B i =ΔX i ×GAIN B +OFFSET B

[0049]

[0050] The above formula ΔX i A is the deflection amount of the auxiliary deflector 209. i , B i Depends on the deflection amount ΔX of the auxiliary deflector 209 i , so use the parameter GAIN A 、OFFSET A 、GAIN B 、OFFSET B It is expressed by a linear equation. Parameter GAIN A 、OFFSET A 、GAIN B 、OFFSET B For example, the determination can be made by drawing a plurality of evaluation patterns on the evaluation substrate while changing the adjustment time and emission time conditions so that the sum of squares of differences (3σ of the differences) between the drawing results under all conditions and the calculated values ​​becomes minimum.

[0051] Figure 4 b shows the change over time of the adjustment error when the beam is deflected to the reference position of the next TF40 (the second TF40) at time T2. 2 , Set the total launch time in this TF40 to Shot 2 In the case of the adjustment error in TF40, the adjustment error in TF40 becomes the time T2 as the reference through STL 2 +Shot 2 / 2 and the adjustment error E2 at time T1 and the STL 1 +Shot 1 +STL 2 +Shot 2The total of the adjustment error R1 when / 2.

[0052] Based on time T1, STL 1 +Shot 1 +STL 2 +Shot 2 The adjustment error R1 at / 2 is the residual of the adjustment error in the first TF 40. The adjustment error X2 in the second TF 40 is expressed by the following equation (4).

[0053]

[0054] In this way, not only the adjustment errors in the TF40 of the transmission beam but also the residuals of the adjustment errors in the TF40 of the past transmission beams are added, so that the deviation of the beam deflection position can be accurately estimated.

[0055] For example, when transmitting a beam to the nth TF40, taking into account the influence of the residual of the adjustment error in the past six TF40s, that is, the n-1th to n-6th TF40s, the adjustment error X n It is represented by the following formula (5).

[0056]

[0057] The data of the calculation formula (2) for calculating the positional deviation caused by such an adjustment error is pre-stored in the storage unit 142. The correlation information for obtaining the positional deviation is not limited to the calculation formula, and any information may be used as long as it indicates the relationship between the elapsed time and the positional deviation for obtaining the positional deviation.

[0058] Figure 5 It is a flow chart that the drawing method of the present embodiment is described. In the emission data generation process (step S101), the emission data generation unit 50 performs multi-stage data conversion processing for the drawing data stored in the storage device 140, and each graphic pattern that will become the drawing object is divided into an emission graphic of a size that can be irradiated in one emission, and generates emission data in a format that becomes the intrinsic format of the drawing device. As the emission data, according to each emission, for example, a graphic code, a graphic size, and a drawing position, etc., representing the graphic type of each emission graphic are defined.

[0059] In the transmission time and adjustment time calculation process (step S102), the drawing control unit 54 calculates the transmission time Shot of each TF40 based on the transmission data of each transmission. In addition, the drawing control unit 54 obtains the deflection amount to the reference position based on the sub-deflector 209 for each TF40, and calculates the adjustment time STL of the DAC amplifier 132 based on the deflection amount. The larger the deflection amount of the sub-deflector 209, the larger the output voltage of the DAC amplifier 132, and the longer the adjustment time STL. For example, a relationship between the deflection amount of the sub-deflector 209 and the preferred adjustment time is prepared in advance, and the adjustment time is calculated using this relationship.

[0060] In the position shift amount calculation process (step S103), the transmission position correction unit 52 calculates the transmission position shift amount caused by the adjustment error for each of the plurality of TF40 in the SF30. The transmission position correction unit 52 substitutes the deflection amount, adjustment time, and transmission time of the sub-deflector 209 corresponding to the n-th TF40 and the deflection amount of the sub-deflector 209 corresponding to each of the n-1th to n-kth TF40 (k is an integer greater than or equal to 1) and the elapsed time from the application of voltage to the sub-deflector 209 and the start of deflection into the calculation formula retrieved from the storage unit 142, and adds them together to calculate the transmission position shift amount in the n-th TF40.

[0061] For example, taking into account the influence of the residual of the adjustment error in the past 6 TF40s, the value obtained by substituting the deflection amount, adjustment time and transmission time of the sub-deflector 209 corresponding to the n-th TF40 into the calculation formula and the value obtained by substituting the deflection amount of the sub-deflector 209 corresponding to each TF40 from the n-1th to the n-6th TF40 and the elapsed time from the application of voltage to the sub-deflector 209 and the start of deflection into the calculation formula are added to calculate the transmission position deviation in the n-th TF40.

[0062] In the position correction step (step S104 ), the shot position correction unit 52 obtains a position obtained by subtracting the shot position offset amount in the TF 40 to which the shot belongs calculated in step S103 from the designed drawing position coordinates of each shot, as a corrected drawing position.

[0063] In the drawing process (step S105), drawing processing is performed using the transmission data after the transmission position is corrected by the transmission position correction unit 52. The drawing control unit 54 outputs the corrected drawing position to the deflection control circuit 120 for each transmission. The deflection control circuit 120 calculates the deflection data for drawing to the corrected position.

[0064] The deflection control circuit 120 outputs deflection data of the irradiation time corresponding to the necessary irradiation amount to the DAC amplifier 130 for the blanking deflector 212. The deflection control circuit 120 outputs the deflection data to the DAC amplifier 134 for the main deflector 208 so that the beam follows the movement of the XY stage 105. The deflection control circuit 120 outputs the deflection data to the DAC amplifier 132 for the sub-deflector 209, and the sub-deflector 209 deflects the beam to a relative position in the SF30. The deflection control circuit 120 outputs the deflection data to the DAC amplifier 136 for the sub-deflector 216, and the sub-deflector 216 deflects the beam to a relative position in the TF40. In addition, the deflection control circuit 120 outputs the deflection data to the DAC amplifier 138 for the shaping deflector 205 so that the beam has a desired shape.

[0065] When the electron beam 200 emitted from the electron gun 201 (emission unit) passes through the blanking deflector 212, it is deflected by the blanking deflector 212 in such a manner that, for example, when the beam is on (ON), it passes through the blanking aperture 214, and when the beam is off (OFF), the entire beam is blocked by the blanking aperture 214. From the state of the beam off (OFF) to the state of the beam on (ON), and then to the state of the beam off (OFF), the electron beam 200 that has passed through the blanking aperture 214 is emitted as a primary electron beam.

[0066] Each emitted electron beam 200 generated by passing through the blanking deflector 212 and the blanking aperture 214 illuminates the entire first shaping aperture 203 having a rectangular hole by the illumination lens 202. Here, the electron beam 200 is first shaped into a rectangular shape.

[0067] The electron beam 200 having passed through the first aperture image of the first shaping aperture 203 is projected onto the second shaping aperture 206 by the projection lens 204. The first aperture image on the second shaping aperture 206 is deflected and controlled by the shaping deflector 205, so that the beam shape and size can be changed (variable shaping can be performed). This variable shaping can be performed at each emission, and the beam shape and size can be different at each emission.

[0068] The electron beam 200 that has passed through the second aperture image of the second forming aperture 206 is focused by the objective lens 207, and is deflected by the main deflector 208, the sub-deflector 209, and the sub-sub-deflector 216, and irradiates a desired position of the sample 101 disposed on the continuously moving XY stage 105. As described above, the multiple shots of the electron beam 200 are sequentially deflected onto the sample 101 serving as a substrate by each deflector.

[0069] As described above, according to this embodiment, the offset of the emission position is calculated by considering not only the adjustment error of the TF40 being emitted but also the residual of the adjustment error of the TF40 after emission, and the drawing position is corrected by subtracting the offset from the designed drawing position coordinates. Thus, it is possible to shorten the adjustable adjustment time and improve productivity while achieving high drawing accuracy.

[0070] In the above embodiment, an example is described in which the residuals of the adjustment errors of the n-1th to n-kth TF40 are considered when calculating the transmission position deviation caused by the adjustment error in the nth TF40 within one SF30, but the value of "k" may be fixed or variable. For example, the residuals of the adjustment errors of all TF40s that have been transmitted within the same SF30 may be considered.

[0071] For example, when 225 (=15×15) TF40s are included in one SF30, when calculating the transmission position offset amount caused by the adjustment error in the fifth TF40, the residuals of the adjustment errors of the first to fourth TF40 are considered. When calculating the transmission position offset amount caused by the adjustment error in the 20th TF40, the residuals of the adjustment errors of the first to 19th TF40 are considered. When calculating the transmission position offset amount caused by the adjustment error in the 225th TF40, the residuals of the adjustment errors of the first to 224th TF40 are considered. Although the amount of calculation for calculating the transmission position offset amount gradually increases as the rendering process in one SF30 proceeds, the transmission position offset amount can be obtained with higher accuracy.

[0072] When calculating the transmission position shift amount caused by the adjustment error in the n-th SF 30 in one main deflection region by the same method as in the above-described embodiment, the residuals of the adjustment errors in the n-1th to n-kth SFs 30 may be considered.

[0073] In addition, the present invention is not limited to the above-mentioned embodiments themselves. In the implementation stage, the constituent elements can be deformed and concretized within the scope of the main purpose. In addition, various inventions can be formed by appropriate combinations of multiple constituent elements disclosed in the above-mentioned embodiments. For example, several constituent elements can be deleted from the full constituent elements shown in the embodiments. Moreover, the constituent elements in different embodiments can also be appropriately combined.

Claims

1. A charged particle beam drawing device, which uses a deflector to deflect a charged particle beam to sequentially draw patterns at multiple deflection positions in a sample, wherein: The charged particle beam drawing device comprises: an emission data generating unit that converts the depiction data into emission data, wherein the emission data includes each emission position and emission time of the charged particle beam; a storage unit storing correlation information indicating a relationship between an elapsed time from the start of deflection of the deflector and a positional deviation amount of an emission position of the charged particle beam; an emission position correction unit, which obtains a first position offset corresponding to an n-th deflection position in the drawing order of a pattern using an adjustment time of the deflector, the emission time, and the association information, obtains a second position offset corresponding to an n-1-th deflection position using an elapsed time from the start of the deflection and the association information, adds the first position offset to the second position offset to obtain a position correction amount, and corrects an emission position defined by the emission data at the n-th deflection position based on the position correction amount, wherein n is an integer greater than or equal to 2; and The drawing unit draws a pattern by irradiating the n-th deflection position with a charged particle beam using emission data whose emission position has been corrected.

2. The charged particle beam drawing device according to claim 1, wherein: The n is an integer greater than 3, The emission position correction unit uses the elapsed time from the start of the deflection and the correlation information to obtain a third position offset corresponding to the deflection position traced back to the n-kth deflection position in the drawing order of the pattern, and adds the first position offset, the second position offset and the third position offset to obtain the position correction amount, wherein k is an integer greater than 2 and less than n.

3. The charged particle beam drawing device according to claim 1, wherein: The deflector includes a multi-stage deflector with different deflection amounts.

4. The charged particle beam drawing device according to claim 3, wherein: The deflector has: A first deflector deflects the charged particle beam toward reference positions of a plurality of first small regions, wherein the plurality of first small regions are formed by virtually dividing the drawing region of the sample in a grid shape; A second deflector deflects the charged particle beam from a reference position of each first small area to a reference position of a plurality of second small areas, wherein the plurality of second small areas are formed by virtually dividing each first small area in a grid shape; as well as A third deflector deflects the charged particle beam from a reference position of each second small area to an emission position of the beam irradiated into the second small area, The storage unit stores correlation information indicating a relationship between an elapsed time from the start of deflection of the deflector and a positional offset amount of an emission position of the charged particle beam by setting an elapsed time from the start of deflection of the second deflector as the elapsed time from the start of deflection of the second deflector, The emission position correction unit uses the adjustment time of the second deflector, the emission time and the correlation information to obtain the first position offset corresponding to the nth deflection position, i.e., the reference position of the second small area, and uses the elapsed time from the start of the deflection and the correlation information to obtain the second position offset corresponding to the n-1th deflection position, i.e., the reference position of the second small area, and adds the first position offset to the second position offset to obtain a position correction amount, and based on the position correction amount, corrects the emission position defined by the emission data in the reference position of the nth second small area, wherein n is an integer greater than 2.

5. The charged particle beam drawing device according to claim 4, wherein: The n is an integer greater than 3, The emission position correction unit uses the elapsed time from the start of the deflection and the correlation information to obtain a third position offset corresponding to the nkth deflection position, i.e., the reference position of the second small area, and adds the first position offset, the second position offset and the third position offset to obtain the position correction amount, wherein k is an integer greater than 2 and less than n.

6. A charged particle beam drawing method, wherein a charged particle beam is deflected by a deflector to sequentially draw patterns at a plurality of deflection positions in a sample, wherein: The charged particle beam drawing method comprises the following steps: converting the depiction data into emission data, wherein the emission data includes each emission position and emission time of the charged particle beam; Obtaining a first position offset corresponding to an n-th deflection position in the drawing order of a pattern using an adjustment time of the deflector and the emission time and previously determined correlation information, wherein the correlation information indicates a relationship between an elapsed time from the start of deflection of the deflector and the position offset of the emission position of the charged particle beam, wherein n is an integer greater than or equal to 2; acquiring a second position shift amount corresponding to an n-1th deflection position in the drawing order of the pattern using an elapsed time from the start of the deflection and the correlation information; adding the first position offset and the second position offset to obtain a position correction amount, and correcting the transmission position defined by the transmission data at the n-th deflection position based on the position correction amount; and The charged particle beam is irradiated toward the n-th deflection position using the emission data whose emission position has been corrected, thereby drawing a pattern.

7. The charged particle beam drawing method according to claim 6, wherein: The n is an integer greater than 3, The third position offset corresponding to the deflection position traced back to the n-kth deflection position in the drawing order of the pattern is obtained using the elapsed time from the start of the deflection and the correlation information, and the first position offset, the second position offset and the third position offset are added to obtain the position correction amount, wherein k is an integer greater than 2 and less than n.

8. The charged particle beam drawing method according to claim 6, wherein: The charged particle beam is deflected toward reference positions of a plurality of first small regions by a first deflector, wherein the plurality of first small regions are formed by virtually dividing the sample drawing region in a grid shape. The charged particle beam is deflected from a reference position of each first small area to a reference position of a plurality of second small areas by using a second deflector, wherein the plurality of second small areas are formed by virtually dividing each first small area in a grid shape, Deflecting the charged particle beam from a reference position of each second small area to an emission position of the beam irradiated into the second small area by a third deflector, storing correlation information indicating a relationship between an elapsed time from the start of deflection of the deflector and an amount of positional deviation of an emission position of the charged particle beam by setting an elapsed time from the start of deflection of the second deflector as the elapsed time from the start of deflection of the second deflector, using the adjustment time of the second deflector, the emission time and the correlation information to obtain the first position offset corresponding to the nth deflection position, i.e., the reference position of the second small area, using the elapsed time from the start of the deflection and the correlation information to obtain the second position shift amount corresponding to the n-1th deflection position, that is, the reference position of the second small area, The first position offset amount and the second position offset amount are added to obtain a position correction amount. Based on the position correction amount, the emission position defined by the emission data at the reference position of the nth second small area is corrected, wherein n is an integer greater than or equal to 2.

9. The charged particle beam drawing method according to claim 8, wherein: The n is an integer greater than 3, Using the elapsed time from the start of the deflection and the correlation information, a third position offset corresponding to the deflection position of the pattern that is n-kth in the drawing order, that is, the reference position of the second small area, is obtained, wherein k is an integer greater than 2 and less than n, The position correction amount is obtained by adding the first position shift amount, the second position shift amount, and the third position shift amount.

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