Gas processing equipment

Abstract

The present invention relates to a gas treatment device. A gas treatment device is provided that can suppress defects in a substrate caused by particles during gas treatment using a fluorine-containing gas and an alkaline gas. The gas treatment device for performing gas treatment on a substrate comprises: a chamber that accommodates the substrate; a gas supply mechanism that independently supplies a fluorine-containing gas and an alkaline gas; and a gas introduction member that merges the fluorine-containing gas and the alkaline gas supplied from the gas supply mechanism and introduces the mixed gas formed by the fluorine-containing gas and the alkaline gas into the chamber. The portion of the gas introduction member that includes the confluence of the fluorine-containing gas and the alkaline gas is made of an aluminum material, and a resin coating is formed on at least the portion that includes the confluence.

Description

Technical Field

[0001] The present invention relates to a gas processing device. Background Art

[0002] Recently, a method known as chemical oxide removal (COR) has become common in semiconductor device manufacturing processes, where chemical etching is performed without generating plasma within a chamber. COR involves supplying hydrogen fluoride (HF) gas, a fluorine-containing gas, and ammonia (NH3) gas, an alkaline gas, to a substrate via a showerhead (e.g., Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2013 / 183437 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a gas processing apparatus capable of suppressing defects in a substrate caused by particles during gas processing using a fluorine-containing gas and an alkaline gas.

[0008] Solutions for solving problems

[0009] A gas treatment device according to a technical solution of the present disclosure is a gas treatment device for performing gas treatment on a substrate, wherein the gas treatment device comprises: a chamber for accommodating the substrate; a gas supply mechanism for independently supplying a fluorine-containing gas and an alkaline gas; and a gas introduction member for merging the fluorine-containing gas supplied from the gas supply mechanism with the alkaline gas, and introducing a mixed gas formed by mixing the fluorine-containing gas and the alkaline gas into the chamber, wherein a portion of the gas introduction member including a confluence portion of the fluorine-containing gas and the alkaline gas is made of an aluminum material, and a resin coating is formed on at least the portion including the confluence portion.

[0010] Effects of the Invention

[0011] According to the present disclosure, a gas processing apparatus is provided that can suppress the generation of defects in a substrate due to particles during gas processing using a fluorine-containing gas and an alkaline gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a cross-sectional view showing the gas treatment device according to the first embodiment.

[0013] Figure 2 It is a cross-sectional view for explaining the structure of the gas ejection plug.

[0014] Figure 3 This is a cross-sectional view showing a state in which a resin coating is also formed on the inner surface of a recessed portion serving as a gas diffusion space formed in a lower plate of a shower head in the gas treatment device according to the first embodiment.

[0015] Figure 4 This is a cross-sectional view showing a state in which a resin coating is also formed on the inner surface of the chamber and the surface of the mounting table in the gas treatment device according to the first embodiment.

[0016] Figure 5 It is a cross-sectional view showing a gas treatment device according to a second embodiment.

[0017] Figure 6 This is a partial cross-sectional view showing a part of a shower head as a main portion of an example of a gas treatment device for implementing the second embodiment.

[0018] Figure 7 yes Figure 6 Cross-sectional view along line AA.

[0019] Figure 8 yes Figure 6 Cross-sectional view of line BB. DETAILED DESCRIPTION

[0020] Hereinafter, embodiments will be described with reference to the drawings.

[0021] <First embodiment>

[0022] [Overall structure of the gas treatment device]

[0023] Figure 1 It is a cross-sectional view showing the gas treatment device according to the first embodiment. Figure 1 The gas treatment device shown is configured as an etching device for etching a silicon oxide material present on, for example, the surface of a substrate. While SiO2 is a representative example of a silicon oxide material, any material containing silicon and oxygen, such as SiOCN, may be used. Typically, the silicon oxide material is a film.

[0024] like Figure 1 As shown, the gas treatment device 1 includes a sealed chamber 10. A mounting table 12 for mounting a substrate W in a substantially horizontal state is provided inside the chamber 10. As the substrate W, a semiconductor wafer such as a Si wafer is exemplified, but the present invention is not limited thereto.

[0025] The gas processing apparatus 1 also includes a gas supply mechanism 13 for supplying a processing gas to the chamber 10 , and an exhaust mechanism 14 for exhausting the interior of the chamber 10 .

[0026] The chamber 10 is composed of a chamber body 21 and a lid 22. The chamber body 21 has a bottom 21b and a substantially cylindrical sidewall 21a. The upper portion of the chamber body 21 is open, and this opening is sealed by the lid 22 having a recessed portion therein. The sidewall 21a and the lid 22 are sealed by a sealing member (not shown), thereby ensuring airtightness within the chamber 10.

[0027] A shower head 26 serving as a gas introduction member is embedded in the lid 22 so as to face the mounting table 12. The shower head 26 sprays gas into the chamber 10 in a shower-like manner. Details of the shower head 26 will be described later.

[0028] A carry-in / out port 41 for carrying substrates W in and out is provided on the side wall 21 a of the chamber body 21 . The carry-in / out port 41 can be opened and closed by a gate valve 42 , and substrates W can be transported between adjacent modules.

[0029] The mounting table 12 is formed into a generally circular shape when viewed from above and is fixed to the bottom 21b of the chamber 10. A thermostat 45 is provided within the mounting table 12 for regulating the temperature of the mounting table 12. The thermostat 45 can be composed of, for example, a temperature-regulating medium (e.g., water) circulating through a temperature-regulating medium and a resistance heater. The thermostat 45 regulates the temperature of the mounting table 12 to a desired level, thereby controlling the temperature of the substrate W placed on the mounting table 12.

[0030] The gas supply mechanism 13 includes an HF gas supply source 51 , an Ar gas supply source 52 , an NH 3 gas supply source 53 , and an N 2 gas supply source 54 .

[0031] HF gas, which is a fluorine-containing gas, is supplied from the HF gas supply source 51. HF gas is exemplified as the fluorine-containing gas herein, but F2 gas, ClF3 gas, or NF3 gas may also be used as the fluorine-containing gas in addition to HF gas.

[0032] The NH3 gas supply source supplies NH3 gas as an alkaline gas. Here, NH3 gas is exemplified as the alkaline gas, but amine gas can also be used as the alkaline gas in addition to NH3 gas. Examples of amines include methylamine, dimethylamine, and trimethylamine.

[0033] The Ar gas supply source 52 and the N2 gas supply source 54 supply N2 gas and Ar gas as inert gases that also function as dilution gas, purge gas, and carrier gas. However, both the Ar gas supply source 52 and the N2 gas supply source 54 may supply Ar gas or N2 gas. Furthermore, the inert gas is not limited to Ar gas and N2 gas; other rare gases such as He gas may also be used.

[0034] One end of a first gas supply pipe 61 to a fourth gas supply pipe 64 are connected to these gas supply sources 51 to 54, respectively. The other end of the first gas supply pipe 61 connected to the HF gas supply source 51 and the other end of the third gas supply pipe 63 connected to the NH₃ gas supply source 53 are connected to the shower head 26. The other end of the second gas supply pipe 62 connected to the Ar gas supply source 52 is connected to the first gas supply pipe 61. The other end of the fourth gas supply pipe 64 connected to the N₂ gas supply source 54 is connected to the third gas supply pipe 63.

[0035] HF gas as a fluorine-containing gas and NH 3 gas as an alkaline gas are introduced into the shower head 26 together with Ar gas and N 2 gas as inert gases, respectively.

[0036] Flow control units 65 for opening and closing the flow paths and controlling the flow rates are provided in the first to fourth gas supply lines 61 to 64. The flow control units 65 are composed of, for example, an on-off valve and a flow controller such as a mass flow controller (MFC) or a flow control system (FCS).

[0037] The exhaust mechanism 14 has an exhaust pipe 72 connected to an exhaust port 71 formed at the bottom 21b of the chamber 10, and also has an automatic pressure control valve (APC) 73 set in the exhaust pipe 72 for controlling the pressure in the chamber 10 and a vacuum pump 74 for exhausting the chamber 10.

[0038] Two capacitance pressure gauges 76a and 76b for high and low pressure are provided on the sidewalls of the chamber 10 to control the pressure in the chamber 10. A temperature sensor (not shown) for detecting the temperature of the substrate W mounted on the mounting table 12 is provided near the substrate W.

[0039] The chamber 10 and the mounting table 12 constituting the gas treatment device 1 can be formed of an aluminum-based material. The aluminum-based material may be aluminum alone, an aluminum alloy, or a material having an anodic oxide film (Al2O3) formed on the surface of aluminum.

[0040] The gas treatment device 1 also includes a control unit 80. The control unit 80 is comprised of a computer and includes a main control unit with a CPU, an input device, an output device, a display device, and a storage device (storage medium). The main control unit controls the operation of each component of the gas treatment device 1. The main control unit controls each component based on a control program stored on a storage medium (such as a hard disk, optical disk, or semiconductor memory) built into the storage device. The storage medium stores a processing recipe as the control program, and processes in the gas treatment device 1 are executed based on the processing recipe.

[0041] also, Figure 1The gas treatment device may also include a plasma source. The plasma source excites the gas to improve reactivity. Depending on the gas used, it is sometimes preferable to use plasma.

[0042] [Nozzle]

[0043] Next, the shower head 26 will be described. The shower head 26 comprises an upper plate 30 forming the upper wall of the lid 22, an intermediate plate 31 below the upper plate 30, and a lower plate 32 below the intermediate plate 31. These constitute the main body of the shower head 26. The upper plate 30, intermediate plate 31, and lower plate 32 are made of the same aluminum-based material as the chamber 10 and the mounting table 12. The shower head 26 is sealed with a sealing ring (not shown) to form a hermetically sealed structure. A gas flow path 31a is formed in the center of the intermediate plate 31.

[0044] A first gas inlet hole 33 and a second gas inlet hole 34 are vertically formed through the upper portion of the intermediate plate 31 and the upper plate 30. These first and second gas inlet holes 33 and 34 are connected to the gas flow path 31a. The first gas inlet hole 33 is connected to a first gas supply pipe 61 connected to the HF gas supply source 51, while the second gas inlet hole 34 is connected to a third gas supply pipe 63 connected to the NH3 gas supply source 53. Consequently, HF gas (a fluorine-containing gas) and NH3 gas (an alkaline gas) merge and mix within the gas flow path 31a. A resin coating 39 is formed on the inner surface of the gas flow path 31a of the intermediate plate 31.

[0045] A concave portion 32a serving as a gas diffusion space is formed on the upper surface of the lower plate 32. Furthermore, a plurality of gas ejection holes 37 are formed on the lower surface of the lower plate 32. The plurality of gas ejection holes 37 extend vertically from the concave portion 32a, penetrate through the concave portion 32a, and face the interior of the chamber 10. The intermediate plate 31 is provided with a plurality of ( Figure 1 Only one connection hole 35 is shown in the figure, and a resin gas ejection plug 36 is attached to a portion of the lower surface of the intermediate plate 31 corresponding to the connection hole 35.

[0046] like Figure 2As shown, the gas ejection plug 36 includes a flange portion 36a mounted on the intermediate plate 31 and a gas ejection portion 36b protruding downward from the lower center of the flange portion 36a. A vertical hole 36c is formed in the center of the flange portion 36a, which communicates with the connection hole 35. The vertical hole 36c is connected to the middle of the gas ejection portion 36b, and multiple gas ejection holes 36d are opened on the side of the gas ejection portion 36b and extend from the vertical hole 36c. A mixed gas of fluorine-containing gas (HF gas) and alkaline gas (NH3 gas) is then ejected from the gas ejection holes 36d into the recess 32a, which serves as the gas diffusion space. The mixed gas diffused in the recess 32a is ejected into the chamber 10 through the gas ejection holes 37.

[0047] [Resin coating]

[0048] Next, the resin coating layer 39 will be described.

[0049] As described above, a resin coating 39 is formed on the inner surface of the gas flow path 31a of the intermediate plate 31 of the shower head 26. The resin coating 39 prevents the fluorine-containing gas HF gas and the alkaline gas NH3 gas from coming into contact with the aluminum material constituting the shower head 26 when these gases merge in the gas flow path 31a. This effectively prevents the generation of particles due to the reaction between the mixed gas of the fluorine-containing gas HF gas and the alkaline gas NH3 gas and the aluminum material.

[0050] As the resin coating 39, for example, a PFA coating using PFA, a fluororesin, can be preferably used. There are various types of PFA coatings, including those containing mica. However, mica contains a high concentration of impurities such as Al and S, which are likely to cause the generation of particles. Therefore, a PFA coating that does not contain mica is preferred.

[0051] The resin coating 39 can be formed by powder coating, dip coating, or spray coating, and can have a thickness of about 40 μm to 1.0 mm. Other fluororesins besides PFA, such as PTFE, PCTFE, FEP, ETFE, and PCTFE, can also be used as the resin coating 39 .

[0052] The reaction between HF gas (fluorine-containing gas), NH3 gas (alkaline gas), and Al mostly occurs at the confluence of these gases. Therefore, by forming a resin coating 39 at least on the portion containing the confluence of these gases, the above-mentioned reaction can be suppressed. Furthermore, after the fluorine-containing gas and the alkaline gas merge, the above-mentioned reaction also occurs in the flow path of the mixed gas formed by the mixture of these gases. Therefore, in this embodiment, a resin coating 39 is formed on the inner surface portion of the gas flow path 31a, including the confluence of HF gas (fluorine-containing gas) and NH3 gas (alkaline gas), which comes into contact with the mixed gas of these gases.

[0053] In addition to the inner surface of the gas flow path 31a of the intermediate plate 31, any aluminum material portion that comes into contact with the mixed gas of HF gas (fluorine-containing gas) and NH3 gas (alkaline gas) can also be coated with a resin to prevent the reaction. Figure 3 As shown, a resin coating may be formed on the inner surface of the recess 32a. However, the inner surface of the recess 32a has a complex shape including a portion corresponding to the gas ejection hole 37, so it is sometimes difficult to form a resin coating.

[0054] In addition, not only the resin coating 39 can be formed on the nozzle 26, but also Figure 4 As shown, the resin coating 39 may be formed on the inner surface of the chamber 10, which is another aluminum material portion that comes into contact with the mixed gas of the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas). Furthermore, since the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas) also come into contact with the mounting table 12, the resin coating may also be formed on the mounting table 12 when the mounting table 12 is made of an aluminum-based material.

[0055] [Operation of the gas treatment device]

[0056] Next, the operation of the gas treatment device 1 configured as described above will be described.

[0057] First, a substrate W is placed in the chamber 10. Specifically, the substrate W is carried into the chamber 10 and placed on the stage 12 whose temperature is controlled by the temperature controller 45. For example, the substrate W has a silicon oxide film on its surface as an etching target film.

[0058] Next, as described below, HF gas as a fluorine-containing gas and NH 3 gas as an alkaline gas are supplied into the chamber 10 , and the substrate W is subjected to gas processing.

[0059] First, an inert gas (Ar gas, N2 gas) is supplied from the gas supply mechanism 13 via the showerhead 26 into the chamber 10 to stabilize the temperature of the substrate W and the pressure within the chamber 10. Next, while the inert gas is being supplied from the gas supply mechanism 13, gas treatment is performed using a fluorine-containing gas and an alkaline gas. For example, HF gas is used as the fluorine-containing gas, and NH3 gas is used as the alkaline gas to etch a silicon oxide material, such as a SiO2 film, on the surface of the substrate W. In this case, the fluorine-containing gas is supplied to the gas flow path 31a of the showerhead 26 via the first gas supply pipe 61 and the first gas inlet hole 33, and the alkaline gas is supplied to the gas flow path 31a via the third gas supply pipe 63 and the second gas inlet hole 34. Thus, the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas) merge in the gas flow path 31a of the showerhead 26 before being supplied to the chamber 10, and are mixed (pre-mixed). The mixed gas thus mixed reaches the recessed portion 32 a through the connecting hole 35 and the gas ejection plug 36 , and is ejected from the gas ejection hole 37 into the chamber 10 .

[0060] During this gas treatment, cyclic etching can be performed by repeating a period of supplying a fluorine-containing gas (HF gas) and an alkaline gas (NH 3 gas) into the chamber 10 and a purge period of purging the chamber 10 multiple times.

[0061] The chamber 10 can be purged by exhausting the chamber 10 while stopping the supply of gas, or by stopping the supply of fluorine-containing gas (HF gas) and alkaline gas (NH 3 gas) and supplying inert gas, or by both.

[0062] When HF gas is used as the fluorine-containing gas and NH 3 gas is used as the alkaline gas, ammonium silicofluoride is formed as a reaction product on the surface of the substrate W while these gases are supplied, and the ammonium silicofluoride is removed during the purge period.

[0063] After the etching is completed, an inert gas is supplied into the chamber 10 to purge the chamber 10 , and then the gate valve 42 is opened to allow the substrate W to be carried out from the carry-in / out port 41 .

[0064] When using a conventional gas treatment device to perform such a gas treatment of HF gas and NH3 gas, it is clear that at the confluence of HF gas and NH3 gas in the shower head 26, the presence of water (H2O) causes the HF gas and NH3 gas to react with the Al in the shower head. Furthermore, it has been found that AlF x or AlO x F ySuch AlF-based fine particles are considered to be generated when other fluorine-containing gases and alkaline gases are used.

[0065] As reaction models at this time, the following equations (1) to (3) are exemplified.

[0066] HF+NH3→NH4F···(1)

[0067] 2(NH4)F+H2O→NH3+HF2 － +NH4 + +H2O···(2)

[0068] Al2O3+2HF2 － →2AlF x +H2O(g)+O2···(3)

[0069] Therefore, by inhibiting these reactions, AlF x 、AlO x F y Generation of such AlF-based particles.

[0070] Therefore, in this embodiment, a resin coating 39 is formed on the portion of the shower head 26 made of aluminum material, including at least the confluence portion where the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas) merge. This prevents the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas) from directly contacting the aluminum material portion. Therefore, the above-mentioned reactions (1) to (3) can be suppressed, and the AlF x 、AlO x F y Generation of such AlF-based particles.

[0071] After the fluorine-containing gas and the alkaline gas merge, these reactions also occur in the flow path of the mixed gas formed by these gases. Therefore, in this embodiment, a resin coating 39 is formed on the inner surface portion of the gas flow path 31a, including the confluence point of HF gas (fluorine-containing gas) and NH3 gas (alkaline gas), which is most exposed to the mixed gas. This can more effectively suppress the generation of particles and extend the life of the intermediate plate.

[0072] In addition, the mixed gas of the fluorine-containing gas (HF gas) and the alkaline gas (NH3 gas) also contacts the inner surface portion of the recess 32a. Figure 3As shown, resin coating 39 is also formed on the inner surface of recess 32a, thereby further improving the effect of suppressing the generation of particles. However, in terms of the necessity of resin coating 39, gas flow path 31a is higher than recess 32a. That is, the higher the NH3 gas concentration and the higher the pressure, the easier it is for the above reactions (1) to (3) to occur. Therefore, in terms of the necessity of resin coating 39, gas flow path 31a, where NH3 contacts the wall surface at a high concentration and the gas flow area is narrow, resulting in a high pressure, is higher than recess 32a. In addition, regarding the gas ratio, in the case of an NH3 gas ratio of NH3:HF=1 or higher:6.5, the above reaction is more likely to occur at the confluence point, and resin coating 39 is more effective.

[0073] In addition, although not to the extent of the shower head 26, the mixed gas of HF gas and alkaline gas as fluorine-containing gas also contacts the inner surface of the chamber 10. In addition, such mixed gas also contacts the mounting table 12. Figure 4 As shown, the resin coating 39 is also formed on the inner surface of the chamber 10 and the mounting table 12, thereby further improving the effect of suppressing the generation of particles.

[0074] As the resin coating 39, a PFA coating can be preferably used, which uses PFA as a fluororesin, and more preferably a coating that does not contain mica that may cause particles. In addition, by similarly using PFA to constitute the gas ejection plug 36, the effect of suppressing the generation of particles can be improved.

[0075] <Second embodiment>

[0076] Figure 5 is a cross-sectional view showing a gas treatment device according to a second embodiment. Figure 6 1 is a partial cross-sectional view showing a part of a showerhead as a main part of a gas treatment device according to a second embodiment. Figure 7 yes Figure 6 The cross-sectional view of line AA, Figure 8 yes Figure 6 Cross-sectional view of line BB.

[0077] Figure 5 The basic structure of the gas treatment device 1' of the present embodiment shown is the same as that of the gas treatment device 1' except that the resin coating is not formed. Figure 1 The same is true for the gas treatment device 1 of the first embodiment. Figure 5 In the Figure 1 The same components are denoted by the same reference numerals and their description is omitted.

[0078] This embodiment is characterized by the confluence of HF gas as a fluorine-containing gas and NH3 gas as an alkaline gas in the gas flow path 31a of the intermediate plate 31. Figures 6 to 8As shown, the gas flow path 31 a of the intermediate plate 31 of the shower head 26 extends circumferentially from the connection portion with the first gas introduction hole 33 , and the fluorine-containing gas (HF gas) first flows from the first gas introduction hole 33 .

[0079] The gas flow path 31a has a confluence portion 31aE formed midway. The confluence portion 31aE includes a gas ejection member 38 that ejects alkaline gas (NH3 gas) along the flow of the fluorine-containing gas within the gas flow path 31a. The diameter of the gas flow path 31a at the confluence portion 31aE is relatively large. A secondary gas flow path 34a extending from the second gas inlet hole 34 is connected to the gas ejection member 38. The secondary gas flow path 34a extends downward from the second gas inlet hole 34 to a position below the gas flow path 31a. From this position, the secondary gas flow path 34a further extends horizontally toward the confluence portion 31aE. It then extends upward at a position corresponding to the gas ejection member 38 and is connected to the bottom surface of the gas ejection member 38.

[0080] The gas flow path 31a extends further circumferentially from the confluence 31aE, allowing a mixed fluorine-containing gas (HF gas) and alkaline gas (NH3 gas) to flow through. The gas flow path 31a branches into multiple, specific configurations at a specific location after the confluence 31aE. Multiple connection holes 35 are provided at the ends of the branched portions of the gas flow path 31a, connecting to the recessed portion 32a, which serves as the gas diffusion space. Consequently, the mixed gas of the fluorine-containing gas (HF gas) and alkaline gas (NH3 gas) flows from the gas flow path 31a through the multiple connection holes 35 and the gas ejection plug 36 to the recessed portion 32a, which serves as the gas diffusion space, and is ejected from the multiple gas ejection holes 37.

[0081] Specifically, the confluence portion 31aE has a dual structure with a gas ejection member 38 within the gas flow path 31a. The gas ejection member 38 ejects the alkaline gas (NH3 gas) in the same direction as the fluorine-containing gas (HF gas) flowing through the gas flow path 31a. Therefore, the alkaline gas (NH3 gas) flows along the center of the fluorine-containing gas (HF gas) within the gas flow path 31a, thereby preventing the alkaline gas (NH3 gas) from contacting the wall at a high concentration.

[0082] As described above, when the showerhead 26 is made of an aluminum-based material, if the alkaline gas (NH3 gas) is simply introduced into the gas flow path 31a through the second gas introduction hole 34, the alkaline gas at a high concentration contacts the wall portion made of the aluminum-based material at the confluence of these gases. Therefore, at the confluence, for example, reactions such as those described in formulas (1) to (3) are likely to occur between HF gas (a fluorine-containing gas), NH3 gas (an alkaline gas), Al, and water, resulting in the generation of particles.

[0083] In contrast, in this embodiment, the alkaline gas (NH3 gas) is merged with the fluorine-containing gas (HF gas) at the merging portion 31aE from the gas ejection member 38 along the flow, thereby preventing the alkaline gas (NH3 gas) from coming into contact with the wall portion made of the aluminum material at a high concentration. Therefore, the reactions (1) to (3) described above are less likely to occur, and the generation of particles can be suppressed.

[0084] At this time, from the viewpoint of improving the effect of suppressing the generation of particles, it is preferable that the distance d between the ejection flow of the alkaline gas (NH3 gas) from the gas ejection portion 38 and the wall portion of the gas flow path 31a (see Figure 8 ) is 2.5 mm or more. In addition, regarding the gas ratio, when the NH3 gas ratio is NH3:HF=1 or more:6.5, the above reaction is likely to occur at the confluence portion, and the confluence portion structure of this embodiment is more effective.

[0085] Other Applications

[0086] The above embodiments have been described, but it should be understood that the embodiments disclosed this time are illustrative in all respects and are not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and their gist.

[0087] For example, in the first embodiment, the confluence of the fluorine-containing gas and the alkaline gas can be configured as a double-tube structure, with the alkaline gas ejected along the flow of the fluorine-containing gas. Alternatively, in the second embodiment, at least the inner surface of the gas flow path 31a can be coated with resin. This achieves both the effect of the resin coating and the effect of suppressing high-concentration alkaline gas from contacting the walls of the gas flow path, effectively suppressing the generation of particles. Furthermore, in this case, even if the coating is lost, exposing the aluminum material, the reaction at the confluence can be suppressed, effectively suppressing the generation of particles.

[0088] The gas processing device of the above-described embodiment is merely an example and can be applied to gas processing devices of various structures.

[0089] Furthermore, in the above embodiment, the gas treatment is described as etching of a silicon oxide material present on the surface of the substrate, but the present invention is not limited to this and other treatments such as cleaning may also be used. Furthermore, the substrate is described as a semiconductor wafer, but the present invention is not limited to semiconductor wafers and may also be another substrate such as an FPD (Flat Panel Display) substrate, typified by an LCD (Liquid Crystal Display) substrate, or a ceramic substrate.

Claims

1. A gas processing device for performing gas processing on a substrate, wherein: The gas processing device has: a chamber receiving a substrate; a gas supply mechanism for independently supplying a fluorine-containing gas and an alkaline gas; and a gas introduction member for combining the fluorine-containing gas supplied from the gas supply mechanism with the alkaline gas and introducing a mixed gas formed by mixing the fluorine-containing gas and the alkaline gas into the chamber; The portion of the gas introduction member including the confluence of the fluorine-containing gas and the alkaline gas is made of an aluminum material. A resin coating is formed at least on a portion including the confluence portion. The resin coating is formed at the confluence portion and the portion where the mixed gas of the fluorine-containing gas and the alkaline gas flows. In which, the gas introduction component comprises: a main body, which is made of aluminum material; a first gas introduction part and a second gas introduction part, which respectively introduce the fluorine-containing gas and the alkaline gas; and a gas flow path, which is arranged inside the main body, has the confluence part, and is used for the mixed gas to circulate, and the resin coating is formed on the inner surface of the gas flow path of the main body.

2. The gas processing device according to claim 1, wherein: The gas introduction component is a nozzle that sprays gas into the chamber in a spray shape, and the main body comprises: a first plate, which has the gas flow path; and a second plate, which has a gas diffusion space for the mixed gas to flow into the gas flow path and a plurality of gas ejection holes for ejecting the mixed gas from the gas diffusion space into the chamber.

3. The gas processing device according to claim 2, wherein: The resin coating is also formed on the inner surface of the gas diffusion space.

4. The gas processing device according to claim 2 or 3, wherein: The gas treatment device further includes a resin gas ejection plug provided at a portion where the mixed gas flows from the gas flow path into the gas diffusion space, and configured to eject the mixed gas into the gas diffusion space.

5. The gas processing device according to claim 4, wherein: The gas ejection plug is made of PFA.

6. The gas processing device according to any one of claims 1 to 3, wherein: The gas introduction component also has a confluence portion, which is provided in the gas flow path and is used to make the alkaline gas introduced from the second gas introduction portion merge with and mix with the fluorine-containing gas introduced into the gas flow path from the first gas introduction portion. The confluence portion has a gas ejection component, which ejects the alkaline gas into the gas flow path along the flow of the fluorine-containing gas.

7. The gas processing device according to any one of claims 1 to 3, wherein: The chamber is made of aluminum-based material, and the resin coating is also formed on the inner surface of the chamber.

8. The gas processing device according to any one of claims 1 to 3, wherein: The resin coating is composed of PFA.

9. A gas processing device for performing gas processing on a substrate, wherein: The gas processing device has: a chamber receiving a substrate; a gas supply mechanism for independently supplying a fluorine-containing gas and an alkaline gas; and a gas introducing member for combining the fluorine-containing gas supplied from the gas supply mechanism with the alkaline gas and introducing the mixed gas formed by mixing the fluorine-containing gas and the alkaline gas into the chamber; The gas introduction member comprises: A main body, which is composed of aluminum-type materials; a first gas introduction portion and a second gas introduction portion for introducing the fluorine-containing gas and the alkaline gas, respectively; a gas flow path provided inside the main body; and a merging portion for merging and mixing the alkaline gas introduced from the second gas inlet portion with the gas flow path into which the fluorine-containing gas was introduced from the first gas inlet portion; The merging portion includes a gas ejection member in the gas flow path, the gas ejection member ejecting the alkaline gas into the gas flow path along the flow of the fluorine-containing gas. The resin coating is formed at least on the inner surface of the gas flow path that contacts the mixed gas of the alkaline gas and the fluorine-containing gas, including the merging portion where the alkaline gas and the fluorine-containing gas merge.

10. The gas processing device according to claim 9, wherein: The gas introduction component is a nozzle that sprays gas into the chamber in a spray shape, and the main body comprises: a first plate, which has the gas flow path; and a second plate, which has a gas diffusion space for the mixed gas to flow into the gas flow path and a plurality of gas ejection holes for ejecting the mixed gas from the gas diffusion space into the chamber.

11. The gas processing device according to claim 10, wherein: The gas treatment device further includes a resin gas ejection plug provided at a portion where the mixed gas flows from the gas flow path into the gas diffusion space, and configured to eject the mixed gas into the gas diffusion space.

12. The gas processing device according to claim 11, wherein: The gas ejection plug is made of PFA.

13. The gas processing device according to any one of claims 9 to 12, wherein: The second gas inlet portion has an auxiliary gas flow path that extends downward to a position below the gas flow path, extends horizontally from this position toward the confluence portion, and goes upward at a position corresponding to the gas ejection component and is connected to the bottom surface of the gas ejection component.

14. The gas processing device according to any one of claims 9 to 12, wherein: In the gas flow path, a distance between the jet flow of the alkaline gas from the gas jetting member and a wall portion of the gas flow path is 2.5 mm or more.

15. The gas processing device according to any one of claims 9 to 12, wherein: A resin coating is formed on the inner surface of the gas flow path.

16. The gas processing device according to claim 15, wherein: The resin coating is composed of PFA.

17. The gas processing device according to any one of claims 1 to 3 and 9 to 12, wherein: The fluorine-containing gas is at least one selected from HF gas, F2 gas, ClF3 gas, and NF3 gas, and the alkaline gas is at least one selected from NH3 gas and amine gas.

18. The gas processing device according to claim 17, wherein: The fluorine-containing gas is HF gas, the alkaline gas is NH 3 gas, and the gas treatment is a treatment for etching a silicon oxide-based material present on the substrate.

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