A solar cell, a preparation method thereof, and a solar cell module

Abstract

The present invention discloses a solar cell, a preparation method thereof, and a solar cell module. The solar cell includes a glass substrate, an amorphous silicon cell, and a perovskite cell which are sequentially stacked from bottom to top. Among them, the amorphous silicon cell includes a first transparent electrode layer, a PIN layer, and a first metal layer which are sequentially stacked from bottom to top. The perovskite cell includes a second transparent electrode layer, a perovskite layer, a third transparent electrode layer, and a second metal layer which are sequentially stacked from bottom to top. The solar cell provided by the present invention can absorb light from both sides, can not only absorb weak indoor light, but also absorb strong outdoor light, has a small resistance value and high efficiency, and is applicable to various occasions.

Description

Technical Field

[0001] The present invention relates to the technical field of batteries, particularly to the technical field of solar cells, and specifically to a solar cell, a preparation method thereof, and a solar cell module. Background Art

[0002] Currently, the solar cells used on the market are generally single-type solar cells. Most single-type solar cells can only absorb light on one side. When they are prepared to absorb light on both sides, transparent oxides are often used as electrodes. At this time, the resistance of the device is very large, resulting in a low conversion efficiency.

[0003] Generally, when single-sided battery devices are used in BIPV, outdoor light is mostly used, and indoor light is difficult to be utilized. On small-sized electronic products, especially when combined with a display screen, the brightness of the display screen is difficult to be utilized. For weak light sources such as display screens and indoor light, amorphous silicon batteries have good absorption and can provide a high open-circuit voltage for the device. However, outdoor strong light will affect amorphous silicon batteries. Prolonged exposure to strong light will cause the performance of amorphous silicon batteries to decline; while batteries prepared with materials such as perovskite, organic solar cells, and cadmium telluride belong to batteries with good strong light absorption and can well absorb outdoor strong light. However, these batteries often use oxides as electrodes, and their resistance is large, and the conversion efficiency of the batteries is low. How to provide a solar cell with double-sided light absorption, small resistance, and high stability is a technical problem to be solved urgently at present. Summary of the Invention

[0004] The main object of the present invention is to provide a solar cell, a preparation method thereof, and a solar cell module, aiming to solve the problems that existing solar cells can only absorb light on one side, have a large resistance, and poor stability.

[0005] To achieve the above object, the present invention provides a solar cell, including a glass substrate, an amorphous silicon battery, and a perovskite battery stacked in sequence from bottom to top;

[0006] Wherein, the amorphous silicon battery includes a first transparent electrode layer, a PIN layer, and a first metal layer stacked in sequence from bottom to top;

[0007] The perovskite battery includes a second transparent electrode layer, a perovskite layer, a third transparent electrode layer, and a second metal layer stacked in sequence from bottom to top.

[0008] Optionally, the solar cell further includes a first insulating layer. The first insulating layer is disposed on the glass substrate and connected to the first end of the amorphous silicon battery. The upper surface of the first insulating layer extends downward obliquely in the direction away from the amorphous silicon battery to the glass substrate, and the height of the first insulating layer is not lower than the height of the amorphous silicon battery;

[0009] The perovskite cell has a second end corresponding to the first end, and the second end extends downward along the upper surface of the first insulating layer to the glass substrate.

[0010] Optionally, the solar cell further includes a second insulating layer provided corresponding to the amorphous silicon cell. The second insulating layer is located between the second transparent electrode layer and the second metal layer, is provided in the same layer as the perovskite layer, and one end of the second insulating layer close to the first insulating layer extends beyond the second metal layer.

[0011] Optionally, the included angle between the upper surface of the first insulating layer and the upper surface of the glass substrate is α, where α < 80°.

[0012] Optionally, the material of the first insulating layer includes transparent resin; and / or,

[0013] The solar cell further includes a second insulating layer provided corresponding to the amorphous silicon cell, and the material of the second insulating layer includes transparent resin.

[0014] Optionally, the perovskite layer includes a first transport layer, a perovskite active layer, and a second transport layer that are sequentially stacked from bottom to top.

[0015] Optionally, in the up-down direction, the projections of the first metal layer, the PIN layer, and the second metal layer on the glass substrate overlap.

[0016] Optionally, the material of the first transparent electrode layer includes any one of FTO, ITO, and AZO; and / or,

[0017] The material of the second transparent electrode layer includes any one of FTO, ITO, AZO, TWO, conductive resin, conductive metal, and conductive carbon paste; and / or,

[0018] The material of the third transparent electrode layer includes any one of FTO, ITO, and AZO.

[0019] Optionally, the material of the first metal layer includes a first metal-containing compound, and the first metal-containing compound includes at least one metal element of Ag, Al, Mo, Cu, Au, and Cr; and / or,

[0020] The material of the second metal layer includes a second metal-containing compound, and the second metal-containing compound includes at least one metal element of Ag, Al, Mo, Cu, and Au.

[0021] The present invention also provides a method for manufacturing a solar cell, including the following steps:

[0022] A first transparent electrode layer is provided on a glass substrate;

[0023] A PIN layer is provided on the first transparent electrode layer;

[0024] A first metal layer is provided on the PIN layer;

[0025] Part of the first metal layer and the PIN layer are etched away to expose part of the first transparent electrode layer;

[0026] A first insulating layer is provided on the first metal layer;

[0027] A second transparent electrode layer is provided on the first insulating layer;

[0028] A perovskite layer is provided on the second transparent electrode layer;

[0029] A third transparent electrode layer is provided on the perovskite layer;

[0030] A second metal layer is provided on the third transparent electrode layer.

[0031] Optionally, the step of providing a PIN layer on the first transparent electrode layer includes: depositing a third transport layer, an intrinsic layer, and a fourth transport layer on the first transparent electrode layer by PECVD technology to obtain the PIN layer.

[0032] Optionally, the step of providing a first insulating layer on the first transparent electrode layer includes: providing a first insulating layer on the first transparent electrode layer by slit coating technology, and then preparing a pattern by yellow 7 photolithography process technology; or,

[0033] Providing a first insulating layer on the first transparent electrode layer by screen printing technology.

[0034] Optionally, the step of providing a perovskite layer on the second transparent electrode layer includes: sequentially providing a first transport layer, a perovskite active layer, and a second transport layer on the second transparent electrode layer from bottom to top.

[0035] In addition, the present invention also provides a solar cell module, including:

[0036] A base,

[0037] A plurality of solar cells are arranged on the base at intervals along a first direction. Each of the solar cells includes a glass substrate, an amorphous silicon cell, and a perovskite cell stacked in sequence from bottom to top; wherein, the amorphous silicon cell includes a first transparent electrode layer, a PIN layer, and a first metal layer stacked in sequence from bottom to top; the perovskite cell includes a second transparent electrode layer, a perovskite layer, a third transparent electrode layer, and a second metal layer stacked in sequence from bottom to top; and,

[0038] Four metal wires, one of which is connected to the first transparent electrode on the solar cell, one is connected to the third transparent electrode on the solar cell, one is connected to the first metal layer on the solar cell, and the other is connected to the second transparent electrode layer on the solar cell.

[0039] In the technical solution of the present invention, the solar cell can absorb both indoor light (weak light) and outdoor light (strong light), and is applicable to a variety of different occasions; among them, the amorphous silicon cell is used to absorb indoor light, so that the solar cell can also absorb light energy to work in a weak light environment, improving the efficiency of the solar cell; a perovskite cell is stacked on the amorphous silicon cell, and the perovskite cell is used to absorb outdoor light, so that the solar cell can also absorb light energy to work in a strong light environment. In addition, the perovskite cell stacked on the upper end of the amorphous silicon cell can also block a part of the strong light, weaken the strong light, and avoid the strong light directly irradiating the amorphous silicon cell, affecting the amorphous silicon cell and causing the decline of the amorphous silicon cell; in addition, one purpose of setting the first metal layer is to serve as the electrode of the amorphous silicon cell, and the other purpose is to reduce the resistance of the second transparent electrode layer, increase the carrier collection ability of the second transparent electrode layer, reduce energy loss, and improve the efficiency of the perovskite cell. Brief Description of the Drawings

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on the structures shown in these drawings.

[0041] Figure 1 It is a schematic structural diagram of an embodiment of the solar cell provided by the present invention;

[0042] Figure 2 It is a schematic structural diagram of another embodiment of the solar cell provided by the present invention;

[0043] Figure 3 It is a schematic structural diagram of still another embodiment of the solar cell provided by the present invention;

[0044] Figure 4 It is a schematic flow diagram of the preparation method of the solar cell provided by the present invention;

[0045] Figure 5Schematic structural diagram of an embodiment of the solar cell module provided by the present invention.

[0046] Explanation of the reference numerals in the drawings:

[0047]

[0048]

[0049] The realization of the object of the present invention, functional features and advantages will be further described with reference to the embodiments and the accompanying drawings. Detailed implementation manners

[0050] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0051] It should be noted that if there are directional indications (such as up, down, left, right, front, back...) involved in the embodiments of the present invention, the directional indications are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the drawings). If the specific posture changes, the directional indications will also change accordingly.

[0052] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or a solution where A and B are satisfied simultaneously. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that those of ordinary skill in the art can implement them. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the protection scope required by the present invention.

[0053] Generally, when single-sided cell devices are used in BIPV, outdoor light is mostly used, while indoor light is difficult to be used. In small-sized electronic products, especially when attached to display screens, the brightness of the display screen is difficult to be used. Amorphous silicon cells absorb weak light sources such as display screens and indoor light very well, and can provide a very high open-circuit voltage for the device. However, strong outdoor light will have an impact on amorphous silicon cells. Long-term exposure to strong light will cause the performance of amorphous silicon cells to deteriorate. Cells made of materials such as perovskite and cadmium telluride have good strong light absorption and can absorb strong outdoor light very well. However, these cells often use oxides as electrodes, which have a large resistance and a low conversion efficiency. How to provide a solar cell with double-sided light absorption, low resistance and high stability is a technical problem that needs to be solved urgently.

[0054] In view of this, the present invention provides a solar cell. Figures 1 to 3 This is an embodiment of a solar cell provided by the present invention. The solar cell provided by the present invention can absorb light on both sides, and can absorb not only indoor light (weak light) but also outdoor light (strong light). It has a small resistance value, high efficiency and good stability, and is suitable for a variety of occasions. The solar cell is mainly described below in conjunction with specific drawings.

[0055] See also Figure 1 The solar cell 1000 includes a glass substrate 300, an amorphous silicon cell 200 and a perovskite cell 100 which are sequentially stacked from bottom to top; wherein the amorphous silicon cell 200 includes a first transparent electrode layer 10, a PIN layer 20 and a first metal layer 30 which are sequentially stacked from bottom to top; the perovskite cell 100 includes a second transparent electrode layer 1, a perovskite layer 2, a third transparent electrode layer 3 and a second metal layer 4 which are sequentially stacked from bottom to top.

[0056] In the technical solution of the present invention, the solar cell 1000 can absorb both indoor light (weak light) and outdoor light (strong light), and is applicable to a variety of different occasions. Among them, the amorphous silicon cell 200 is used to absorb indoor light, so that the solar cell 1000 can also absorb light energy to work in a weak light environment, improving the efficiency of the solar cell 1000. A perovskite cell 100 is stacked on the amorphous silicon cell 200. The perovskite cell 100 is used to absorb outdoor light, so that the solar cell 1000 can also absorb light energy to work in a strong light environment. In addition, the perovskite cell 100 stacked on the upper end of the amorphous silicon cell 200 can also block a part of the strong light, weaken the strong light, and avoid the strong light directly irradiating the amorphous silicon cell 200, which may affect the amorphous silicon cell 200 and cause the decline of the amorphous silicon cell 200. In addition, one purpose of setting the first metal layer 30 is to serve as the electrode of the amorphous silicon cell 200, and another purpose is to reduce the resistance of the second transparent electrode layer 1, increase the carrier collection ability of the second transparent electrode layer 1, reduce the energy loss, and improve the efficiency of the perovskite cell 100.

[0057] It should be noted that the indoor light (i.e., weak light) mentioned in the present invention includes but is not limited to the light of the display screen, the refracted light of the moon, the indoor lighting, etc.; the outdoor light (i.e., strong light) includes but is not limited to sunlight, etc.

[0058] Please refer to Figure 2, in one embodiment, in order to improve the efficiency of the solar cell 1000, the width of the perovskite cell 100 is increased to increase the effective area of the solar cell 1000, thereby achieving the purpose of increasing the efficiency of the solar cell 1000. Specifically, the solar cell 1000 further includes a first insulating layer 5, which is disposed on the glass substrate 300 and connected to the first end of the amorphous silicon cell 200. The upper surface of the first insulating layer 5 extends downward in a direction away from the amorphous silicon cell 200 to the glass substrate 300, and the height of the first insulating layer 5 is not lower than the height of the amorphous silicon cell 200; the perovskite cell 100 has a second end corresponding to the first end, and the second end extends downward along the upper surface of the first insulating layer 5 to the glass substrate 300. The purpose of setting the first insulating layer 5 is to isolate the amorphous silicon cell 200 and the perovskite cell 100, avoiding the risk of short circuit caused by the direct contact of the positive and negative electrodes of the perovskite cell 100 and the amorphous cell. At the same time, the first insulating layer 5 can also isolate the PIN layer 20 and the perovskite layer 2, preventing the metal ions of the PIN layer 20 from shifting into the perovskite layer 2, affecting the stability of the perovskite layer 2 and resulting in a decrease in the performance of the perovskite cell 100; it should be noted that when preparing the second transparent electrode layer 1, the perovskite layer 2 and the third transparent electrode layer 3, screen printing technology or slot coating technology is often used. After the second transparent electrode layer 1, the perovskite layer 2 and the third transparent electrode layer 3 are set by the above technologies, drying and film formation are required. During the drying and film formation process, the second transparent electrode layer 1, the perovskite layer 2 and the third transparent electrode layer 3 may break, resulting in the failure of preparation. Therefore, in order to avoid the occurrence of film formation breakage, the first insulating layer 5 is inclined; in addition, setting the first insulating layer 5 to be inclined can also increase the effective area of the perovskite layer 2, thereby improving the efficiency of the solar cell 1000.

[0059] Please refer to Figure 3, in another embodiment, the solar cell 1000 further includes a second insulating layer 6 corresponding to the amorphous silicon cell 200. The second insulating layer 6 is located between the second transparent electrode layer 1 and the second metal layer 4, and is arranged on the same layer as the perovskite layer 2. And one end of the second insulating layer 6 close to the first insulating layer 5 extends beyond the second metal layer 4. In this embodiment, in order to prevent metal ions of the PIN layer 20 from migrating into the perovskite layer 2, the perovskite layer 2 is not provided at the position corresponding to the PIN layer 20 in the perovskite cell 100 (that is, the perovskite layer 2 is located on the slope of the first insulating layer 5 and on the glass substrate 300), but a second insulating layer 6 is provided. The second insulating layer 6 is used to isolate the PIN layer 20 and the perovskite layer 2, preventing metal ions of the PIN layer 20 from migrating into the perovskite layer 2 and reacting with the perovskite layer 2, resulting in a decrease in the stability of the perovskite cell 100.

[0060] Please refer to Figure 3 , the perovskite layer 2 includes a first transport layer 21, a perovskite active layer 22, and a second transport layer 23 that are sequentially stacked from bottom to top. In the present invention, the semi-transparent perovskite cell 100 further includes a first electron transport layer and a first hole transport layer. Among them, the specific positions of the first hole transport layer and the first electron transport layer are not limited and can be set according to specific circumstances. Specifically, in one embodiment, the first transport layer 21 is set as the first electron transport layer, and the second transport layer 23 is set as the first hole transport layer. In another embodiment, the first transport layer 21 is set as the first hole transport layer, and the second transport layer 23 is set as the first electron transport layer; the specific formation methods of the first electron transport layer and the first hole transport layer can refer to the conventional setting methods in the art and will not be elaborated here one by one.

[0061] Please refer to Figure 3 , the included angle between the upper surface of the first insulating layer 5 and the upper surface of the glass substrate 300 is α, where α < 80°. Specifically, in actual production, when setting the first transport layer 21, the perovskite active layer 22, and the second transport layer 23, a coating technique needs to be used. In order to prevent the first transport layer 21, the perovskite active layer 22, and the second transport layer 23 from breaking during the coating process or when forming a metal oxide film, the inclination angle of the first insulating layer 5 needs to be set to not more than 80°, so as to avoid an open circuit phenomenon and improve the stability of the perovskite cell 100.

[0062] It should be noted that the materials of the first insulating layer 5 and the second insulating layer 6 are not limited and can be rubber materials or resin materials. Specifically, in this embodiment, considering the transmittance, the materials of the first insulating layer 5 and the second insulating layer 6 are both selected as transparent resins. In this way, both the insulating properties of the first insulating layer 5 and the second insulating layer 6 can be ensured, and the transmittance of the solar cell 1000 can also be ensured.

[0063] In order to further increase the transmittance of the solar cell 1000, in this embodiment, in the up and down direction, the projections of the first metal layer 30, the PIN layer 20, and the second metal layer 4 on the glass substrate 300 are aligned. In this way, the first metal layer 30, the PIN layer 20, and the second metal layer 4 can block the least amount of light, ensuring the transmittance of the solar cell 1000.

[0064] Furthermore, in this embodiment, the width of the first metal layer 30 is not greater than 60 um; the width of the second metal layer 4 is not greater than 60 um; the width of the PIN layer 20 is not greater than 60 um. Such a setting can not only ensure the performance of the amorphous silicon cell 200 and the perovskite cell 100, but also will not affect the transmittance of the solar cell 1000 due to the excessive widths of the first metal layer 30, the second metal layer 4, and the third metal layer.

[0065] The material of the first transparent electrode layer 10 is not limited. Specifically, the material of the first transparent electrode layer 102 can be FTO, ITO, or AZO.

[0066] The material of the second transparent electrode layer 1 is not limited. Specifically, the material of the second transparent electrode layer 1 can be FTO, ITO, or AZO.

[0067] The material of the third transparent electrode layer 3 is not limited. Specifically, the material of the third transparent electrode layer 3 can be FTO, ITO, AZO, IWO, conductive resin, conductive metal, or conductive carbon paste.

[0068] It should be noted that the materials of the first transparent electrode layer 10, the second transparent electrode layer 1, and the third transparent electrode layer 3 can be the same or different, and the specific setting is selected according to the actual situation. In an embodiment, the material of the first transparent electrode layer 10 is selected as FTO, the material of the second transparent electrode layer 1 is selected as ITO, and the material of the third transparent electrode layer 3 is selected as conductive carbon paste. The reason for selecting conductive carbon paste for the second transparent electrode layer 1 is to improve the stability of the perovskite battery 100. If the material of the second transparent electrode layer 1 is selected as a metal oxide, metal ions in the metal compound may migrate into the perovskite active layer 22, resulting in a decrease in the stability of the perovskite battery 100. In another embodiment, the material of the first transparent electrode layer 10 is selected as FTO, the material of the second transparent electrode layer 1 is selected as FTO, and the material of the third transparent electrode layer 3 is also selected as FTO. In this way, the electron transfer efficiency of the PIN layer 20 and the perovskite layer 2 can be improved, thereby improving the working efficiency of the solar cell 1000.

[0069] Furthermore, the material of the first metal layer 30 includes a first metal-containing compound, and the first metal-containing compound is not specifically limited. Specifically, the first metal oxide can be a metal compound containing Ag element, a metal compound containing Al element, a metal compound containing Mo element, a metal compound containing Cu element, a metal compound containing Au element, or a metal compound containing Cr element. Similarly, the material of the second metal layer 4 includes a second metal-containing compound, and the second metal-containing compound is not limited. Specifically, the second metal-containing compound can be a metal compound containing Ag element, a metal compound containing Al element, a metal compound containing Mo element, a metal compound containing Cu element, or a metal compound containing Au element.

[0070] Furthermore, the material of the first transport layer 21 is not limited. Specifically, the material of the first transport layer 21 can be TiO2, SnO2, ZnO, MoO3, ZnO, C60, PCBM, or graphene.

[0071] Furthermore, in this embodiment, the material of the second transport layer 23 is not limited. Specifically, the material of the second transport layer 23 can be PEDOT:PSS, CuSCN, CuI, CuxO, NiO X or V2O5.

[0072] The present invention also provides a solar cell module 10000. Please refer to Figure 5 The solar cell module 10000 includes a base 2000, a plurality of solar cells 1000, and four metal wires 3000. The plurality of solar cells 1000 are arranged on the base 2000 at intervals in a first direction. The specific structure of the solar cell 1000 refers to the above embodiments. One of the metal wires 3000 is connected to the first transparent electrode layer 10 on the solar cell 1000, one of the metal wires 3000 is connected to the third transparent electrode layer 3 on the solar cell 1000, one of the metal wires 3000 is connected to the first metal layer 30 on the solar cell 1000, and the other metal wire 3000 is connected to the second transparent electrode layer 1 on the solar cell 1000. Since the solar cell 1000 adopts all the technical solutions of the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be elaborated here one by one.

[0073] In this embodiment, the four metal wires 3000 are respectively a first metal wire, a second metal wire, a third metal wire, and a fourth metal wire. The first metal wire is connected to the first transparent electrode layer 10, the second metal wire is connected to the third transparent electrode layer 3, and the first metal wire and the second metal wire form the positive electrode of the solar cell module 10000. The third metal wire is connected to the first metal layer 3, the fourth metal wire is connected to the second transparent electrode layer 1, and the third metal wire and the fourth metal wire form the negative electrode of the solar cell module 10000. In addition, it should be noted that in another embodiment, the third metal wire and the fourth metal wire can be combined into a metal wire. One end of the metal wire is connected to the first metal layer 3, and the other end is connected to the second transparent electrode layer 1. The metal wire forms the negative electrode of the solar cell module 10000.

[0074] It should be noted that in this embodiment, the materials and forms of the first metal wire, the second metal wire, the third metal wire, and the fourth metal wire are not limited. In one embodiment, the first metal wire, the second metal wire, the third metal wire, and the fourth metal wire are all selected as copper wires. In another embodiment, the first transparent electrode layer 10 extends out of the amorphous silicon cell 200 to form the first metal wire, the third transparent electrode layer 3 extends out of the perovskite cell 100 to form the second metal wire, the first metal layer 30 extends out of the amorphous silicon cell 200 to form the third metal wire, and the second transparent electrode layer 1 extends out of the perovskite cell 100 to form the fourth metal wire.

[0075] In addition, the present invention also provides a method for manufacturing a solar cell. Please refer to Figure 4 , and the method for manufacturing the solar cell includes the following steps:

[0076] Step S10: Provide a first transparent electrode layer 10 on a glass substrate 300.

[0077] When performing step S10, the operation can be specifically carried out through the following steps: depositing the first transparent electrode layer 10 on the glass substrate 300 by using magnetron sputtering technology.

[0078] Step S20: Provide a PIN layer 20 on the first transparent electrode layer 10.

[0079] In this embodiment, PECVD technology can be used to sequentially deposit a third transport layer, an intrinsic layer, and a fourth transport layer on the first transparent electrode layer 10 to obtain the PIN layer 20. At this time, the first transparent electrode layer 10 serves as the positive electrode; in another embodiment, PECVD technology is used to sequentially deposit a fourth transport layer, an intrinsic layer, and a third transport layer on the first transparent electrode layer 10 to obtain an NIP layer. At this time, the first transparent electrode layer 10 serves as the negative electrode.

[0080] It should be noted that the PIN layer 20 further includes a second electron transport layer and a second hole transport layer. In one embodiment, the third transport layer is set as the second electron transport layer, and the fourth transport layer is set as the second hole transport layer. In another embodiment, the third transport layer is set as the second hole transport layer, and the fourth transport layer is set as the second electron transport layer.

[0081] Step S30: Provide a first metal layer 30 on the PIN layer 20.

[0082] Step S40: Etch away part of the PIN layer 20 and the first metal layer 30 to expose part of the first transparent electrode layer 10.

[0083] Deposit the first metal layer 30 on the PIN layer 20 by using magnetron sputtering technology or screen printing technology, and then sequentially etch away the PIN layer 20 and the first metal layer 30 by using laser technology to expose part of the first transparent electrode layer 10. Then, etch a TCO layer on the first transparent electrode layer 10 by using laser technology.

[0084] Step S50: Provide a first insulating layer 5 on the first transparent electrode layer 10.

[0085] Specifically, in one embodiment, the first insulating layer 5 is provided on the first transparent electrode layer 10 by using slit coating technology, and then a pattern is prepared by using yellow light process technology.

[0086] In another embodiment, a first insulating layer 5 is provided on the first transparent electrode layer 10 by using screen printing technology. First, a solvent of the first insulating layer 5 is provided on the first transparent electrode by using screen printing technology, and then the solvent is heated and evaporated to obtain the first insulating layer 5. Then, the first insulating layer 5 is cured to form the first insulating layer 5 having a certain slope angle.

[0087] Step S60: Provide a second transparent electrode layer 1 on the first metal layer 30.

[0088] The second transparent electrode layer 1 is deposited on the first metal layer 30 by using magnetron sputtering technology.

[0089] Step S70: Provide a perovskite layer 2 on the second transparent electrode layer 1.

[0090] When performing step S70, the operation can be specifically carried out through the following steps: a first transport layer 21 is provided on the second transparent electrode layer 1 by using a solution method or magnetron sputtering method, a perovskite active layer 22 is provided on the first transport layer 21, and a second transport layer 23 is provided on the perovskite active layer 22 by using a solution method or magnetron sputtering method.

[0091] The setting method of the perovskite active layer 22 is not limited. Specifically, it can be vacuum evaporation method, magnetron sputtering method, solution coating method, screen printing method, spraying method, or inkjet printing method. As a preferred embodiment of this embodiment, the setting method of the perovskite active layer 22 is selected as inkjet printing. This method can improve the uniformity of the distribution of the perovskite active layer 22, save materials, and reduce costs.

[0092] Step S80: Provide a third transparent electrode layer 3 on the perovskite layer 2;

[0093] The third transparent electrode layer 3 is deposited on the perovskite layer 2 by using magnetron sputtering technology.

[0094] Step S90: Provide a second metal layer 4 on the third transparent electrode layer 3.

[0095] The second metal layer 4 is deposited on the third transparent electrode layer 3 by using vacuum coating technology or screen printing technology. The purpose of providing the second metal layer 4 is to reduce the resistance of the perovskite battery 100.

[0096] The above are only the preferred embodiments of the present invention, and do not thereby limit the patent scope of the present invention. Any equivalent structural transformation made under the concept of the present invention by using the content of the specification and drawings of the present invention, or any direct / indirect application in other related technical fields, is included in the patent protection scope of the present invention.

Claims

1. A solar cell, characterized in that, It includes a glass substrate, an amorphous silicon cell, and a perovskite cell that are stacked in sequence from bottom to top; Among them, the amorphous silicon cell includes a first transparent electrode layer, a PIN layer, and a first metal layer that are stacked in sequence from bottom to top; The perovskite cell includes a second transparent electrode layer, a perovskite layer, a third transparent electrode layer, and a second metal layer that are stacked in sequence from bottom to top; The solar cell further includes a first insulating layer, which is disposed on the glass substrate and connected to the first end of the amorphous silicon cell. The upper surface of the first insulating layer extends downward in a slanting manner in the direction away from the amorphous silicon cell to the glass substrate, and the height of the first insulating layer is not lower than the height of the amorphous silicon cell; the perovskite cell has a second end corresponding to the first end, and the second end extends downward along the upper surface of the first insulating layer to the glass substrate; the solar cell further includes a second insulating layer corresponding to the amorphous silicon cell, and the second insulating layer is located between the second transparent electrode layer and the second metal layer and is disposed in the same layer as the perovskite layer.

2. The solar cell according to claim 1, characterized in that, One end of the second insulating layer close to the first insulating layer extends beyond the second metal layer.

3. The solar cell according to claim 1, characterized in that, The included angle between the upper surface of the first insulating layer and the upper surface of the glass substrate is α, where α < 80°.

4. The solar cell according to claim 1, characterized in that, The material of the first insulating layer includes transparent resin; and / or, The material of the second insulating layer includes transparent resin.

5. The solar cell according to claim 1, characterized in that, The perovskite layer includes a first transport layer, a perovskite active layer, and a second transport layer that are stacked in sequence from bottom to top.

6. The solar cell according to claim 1, characterized in that, In the up-down direction, the projections of the first metal layer, the PIN layer, and the second metal layer on the glass substrate overlap.

7. The solar cell according to claim 1, characterized in that, The material of the first transparent electrode layer includes any one of FTO, ITO, and AZO; and / or, The material of the second transparent electrode layer includes any one of FTO, ITO, AZO, TWO, conductive resin, conductive metal, and conductive carbon paste; and / or, The material of the third transparent electrode layer includes any one of FTO, ITO, and AZO.

8. The solar cell according to claim 1, characterized in that, The material of the first metal layer includes a first metal-containing compound, and the first metal-containing compound includes at least one metal element among Ag, Al, Mo, Cu, Au, and Cr; and / or, The material of the second metal layer includes a second metal-containing compound, and the second metal-containing compound includes at least one metal element among Ag, Al, Mo, Cu, and Au.

9. A method for preparing the solar cell according to any one of claims 1 to 8, characterized in that, It includes the following steps: Set a first transparent electrode layer on the glass substrate; Set a PIN layer on the first transparent electrode layer; Set a first metal layer on the PIN layer; Etch away part of the first metal layer and the PIN layer to expose part of the first transparent electrode layer; Set a first insulating layer on the first transparent electrode layer; Set a second transparent electrode layer on the first metal layer; Set a perovskite layer on the second transparent electrode layer; Set a third transparent electrode layer on the perovskite layer; Set a second metal layer on the third transparent electrode layer.

10. The method for preparing the solar cell according to claim 9, characterized in that, The step of disposing a PIN layer on the first transparent electrode layer includes: depositing a third transport layer, an intrinsic layer, and a fourth transport layer on the first transparent electrode layer by using PECVD technology to obtain the PIN layer.

11. The method for preparing the solar cell according to claim 9, characterized in that, The step of disposing a first insulating layer on the first transparent electrode layer includes: disposing a first insulating layer on the first transparent electrode layer by using a slot coating technique, and then preparing a pattern by using a yellow light development process technology; or, Disposing a first insulating layer on the first transparent electrode layer by using a screen printing technique.

12. The method for preparing a solar cell according to claim 9, wherein, The step of disposing a perovskite layer on the second transparent electrode layer includes: sequentially disposing a first transport layer, a perovskite active layer, and a second transport layer on the second transparent electrode layer from bottom to top.

13. A solar cell module, characterized in that, Including: A base A plurality of solar cells, which are spaced along a first direction on the base, and each of the solar cells is a solar cell as described in any one of claims 1 to 8 or a solar cell prepared by the preparation method of the solar cell as described in any one of claims 9 to 12; And, Four metal wires, wherein one of the metal wires is connected to the first transparent electrode on the solar cell, one of the metal wires is connected to the third transparent electrode on the solar cell, one of the metal wires is connected to the first metal layer on the solar cell, and the other metal wire is connected to the second transparent electrode layer on the solar cell.

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