Packaging structure and manufacturing method thereof, and display device

Abstract

Disclosed are a packaging structure, a method for manufacturing the same, and a display device. The packaging structure includes: a first substrate; a packaging body disposed on the first substrate; and a first packaging layer disposed on a side of the packaging body away from the first substrate. The first packaging layer includes at least two inorganic layers stacked in sequence, wherein the at least two inorganic layers include a first inorganic layer closest to the packaging body, and the first inorganic layer contains carbon atoms and nitrogen atoms.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a packaging structure and a preparation method thereof, and a display device. Background Art

[0002] Quantum dot layers, color conversion structures, and photoelectric conversion structures require encapsulation during use. In recent years, quantum dot materials have been applied to various fields due to their excellent performance. In particular, in the display field, display products combining quantum dot films with organic light-emitting diodes (OLEDs) have become a research hotspot. However, quantum dot materials are sensitive to water and oxygen and cannot be used alone, requiring encapsulation. Summary of the Invention

[0003] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a packaging structure and a preparation method thereof, and a display device.

[0004] The present disclosure provides a packaging structure, comprising:

[0005] first base;

[0006] a package body disposed on the first substrate;

[0007] A first encapsulation layer is arranged on a side of the encapsulation body away from the first substrate, and the first encapsulation layer includes at least two inorganic layers stacked in sequence, wherein the at least two inorganic layers include a first inorganic layer closest to the encapsulation body, and the first inorganic layer contains carbon atoms and nitrogen atoms.

[0008] In some embodiments, the material of the first inorganic layer includes SiC x N y , where 0<x≤2, 0<y≤2.

[0009] In some embodiments, the at least two inorganic layers further include a second inorganic layer, wherein the material of the second inorganic layer includes SiN n , where 0<n≤1.

[0010] In some embodiments, 0.6<n<1.

[0011] In some embodiments, the at least two inorganic layers further include a third inorganic layer, and the third inorganic layer is located on a side of the second inorganic layer away from the package body, or the third inorganic layer is located between the second inorganic layer and the first inorganic layer;

[0012] The material of the third inorganic layer includes SiO m N g, where 1<m≤2, 0≤g<0.7.

[0013] In some embodiments, the refractive indices of the at least two inorganic layers increase sequentially in a direction away from the package body.

[0014] In some embodiments, the number of the inorganic layers is three, and along the direction away from the package body, the refractive index ranges of the three inorganic layers are: 1.3 to 1.6; 1.4 to 1.8; 1.6 to 2.0 respectively.

[0015] In some embodiments, the thickness of the first encapsulation layer is between 0.3 μm and 2 μm.

[0016] In some embodiments, the package body includes: a color conversion layer.

[0017] In some embodiments, the color conversion layer includes quantum dots.

[0018] In some embodiments, the package body includes a light emitting structure, and the light emitting structure includes a light emitting layer.

[0019] In some embodiments, the light-emitting layer includes quantum dots or organic light-emitting materials.

[0020] In some embodiments, the light-emitting structure further includes: a first cathode, an electron transport layer, a hole transport layer, and a first anode stacked in sequence, wherein the light-emitting layer is located between the electron transport layer and the hole transport layer.

[0021] An embodiment of the present disclosure further provides a display device, comprising: the above-mentioned packaging structure.

[0022] The embodiment of the present disclosure further provides a display device, comprising: the above-mentioned packaging structure, wherein the display device further comprises: a plurality of light-emitting devices, wherein the light-emitting devices are configured to emit light of a preset color;

[0023] The color conversion layer includes multiple light emitting parts, each of which corresponds to a light emitting device. The light emitting part is arranged on the light emitting side of the corresponding light emitting device. The light emitting part is configured to receive the light emitted by the corresponding light emitting device and emit light that is the same as or different from the preset color.

[0024] In some embodiments, the light emitting device is disposed between the color conversion layer and the first substrate.

[0025] In some embodiments, the display device further includes: a second substrate, the second substrate is arranged opposite to the first substrate, the light-emitting device is arranged on the second substrate, the color conversion layer is arranged on the side of the first substrate facing the second substrate, and the first encapsulation layer is located between the color conversion layer and the light-emitting device.

[0026] In some embodiments, the preset color is blue, and the multiple light-emitting portions of the color conversion layer constitute multiple repeating units, each of the repeating units including: a red light-emitting portion for emitting red light, a green light-emitting portion for emitting green light, and a blue light-emitting portion for transmitting blue light.

[0027] In some embodiments, the display device further comprises:

[0028] a second encapsulation layer, wherein the second encapsulation layer covers the plurality of light-emitting devices;

[0029] The accommodating structure layer is arranged on a side of the second encapsulation layer away from the light-emitting device. The accommodating structure layer has a plurality of accommodating grooves, each of the accommodating grooves corresponds to the light-emitting device one by one, and the light-emitting portion is arranged in the accommodating grooves.

[0030] In some embodiments, the display device further comprises:

[0031] a color filter layer located on a side of the color conversion layer away from the light-emitting device, the color filter layer comprising a plurality of color filter portions, each of the color filter portions corresponding to one of the light-emitting portions, the color of the color filter portion being the same as the color of the light emitted by the corresponding light-emitting portion;

[0032] A black matrix is ​​located on a side of the color conversion layer away from the light-emitting device; wherein the orthographic projection of at least a portion of each of the light-emitting portions on the first substrate does not overlap with the orthographic projection of the black matrix on the first substrate.

[0033] The present disclosure also provides a method for preparing a packaging structure, including:

[0034] forming a package body on the first substrate;

[0035] A first encapsulation layer is formed on the encapsulation body away from the first substrate; wherein the step of forming the first encapsulation layer includes: forming at least two inorganic layers in sequence, wherein the at least two inorganic layers include a first inorganic layer closest to the encapsulation body, and the first inorganic layer contains carbon atoms and nitrogen atoms.

[0036] In some embodiments, each of the inorganic layers is formed by a vapor deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0038] Figure 1A A schematic diagram of a packaging structure provided in an embodiment of the present disclosure.

[0039] Figure 1B Schematic diagram of the structure of the packaging body in other embodiments of the present disclosure.

[0040] Figure 2 A schematic diagram of a display device provided in some embodiments of the present disclosure.

[0041] Figure 3 This is a schematic diagram of a driving structure layer provided in some embodiments of the present disclosure.

[0042] Figure 4 Schematic diagram of the outgoing light of the packaging structure provided in an embodiment of the present disclosure.

[0043] Figure 5 Schematic diagram of a display device provided in some other embodiments of the present disclosure.

[0044] Figure 6 This is a flow chart of a method for preparing a packaging structure provided in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0045] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0046] The terms used herein to describe the embodiments of the present disclosure are not intended to limit and / or define the scope of the present disclosure. For example, unless otherwise defined, the technical or scientific terms used in the present disclosure should have the ordinary meaning understood by a person of ordinary skill in the field to which the present disclosure belongs. It should be understood that the "first", "second" and similar terms used in the present disclosure do not indicate any order, quantity or importance, but are merely used to distinguish different components. Unless the context clearly indicates otherwise, the singular forms "one", "an" or "the" and similar terms do not indicate a quantitative limitation, but rather indicate the presence of at least one. "Include" or "comprising" and similar terms mean that the elements or objects appearing before "include" or "comprising" include the elements or objects listed after "include" or "comprising" and their equivalents, and do not exclude other elements or objects. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0047] Quantum dot layers, color conversion structures, and photoelectric conversion structures require encapsulation to protect them from external water and oxygen corrosion during use. Taking quantum dot layers as an example, since quantum dot materials are sensitive to water molecules and oxygen, encapsulation is required during use. In one example, the encapsulation method employed involves mixing the quantum dot material with silicone, encapsulating the quantum dot material within the silicone, and leveraging the silicone's water and oxygen barrier properties to achieve the desired encapsulation effect. However, this encapsulation method cannot completely eliminate corrosion from small molecules such as water and oxygen. In another example, an organic film layer is used to encapsulate the quantum dot layer, or alternatively, two inorganic film layers with an organic film layer between them serve as the encapsulation layer. However, due to the limitations of the organic film manufacturing process, this encapsulation method results in a relatively thick organic film layer, which in turn increases the overall thickness of the encapsulation layer, hindering the application of quantum dot layers in display devices.

[0048] Figure 1A A schematic diagram of a packaging structure provided in an embodiment of the present disclosure is shown in FIG. Figure 1AAs shown, the package structure 1 includes: a first substrate 10, a package body 12 disposed on the first substrate 10, and a first package layer 11. The package body 12 may include a color conversion layer, an electroluminescent structure, or a photoelectric conversion structure. The first package layer 11 is disposed on a side of the package body 12 away from the first substrate 10. The first package layer 11 includes multiple inorganic layers 11a stacked in sequence. The multiple inorganic layers 11a include a first inorganic layer 111 closest to the package body 12. The first inorganic layer 111 contains carbon atoms and nitrogen atoms. The surface of the package body 12 facing the first inorganic layer 111 can be in direct contact with the first inorganic layer 111.

[0049] In the embodiment of the present disclosure, the first encapsulation layer 11 includes multiple inorganic layers 11a, and the inorganic layers 11a can be formed using a vapor deposition process, thereby obtaining a first encapsulation layer 11 with a relatively small thickness, which is conducive to achieving a thinner package structure 1. In addition, the first inorganic layer 111 closest to the package body 12 contains carbon atoms and nitrogen atoms, forming an organic film-like layer with relatively low stress. This is conducive to achieving stress matching between the first inorganic layer 111 and the package body 12, thereby balancing the stress release of the package body 12 over time, preventing cracking of the first inorganic layer 111, and further preventing the other inorganic layers 11a from bursting. Therefore, the package structure 1 in the embodiment of the present disclosure is conducive to achieving a thinner package structure while ensuring product quality.

[0050] In some embodiments, the package body 12 includes: a color conversion layer, which is used to emit light that is the same as or different from the source light under the irradiation of the source light. For example, the color conversion layer includes perovskite; for another example, the color conversion layer includes quantum dots. For another example, the color conversion layer includes a fluorescent material and a phosphorescent material, for example, a red phosphorescent material and a green fluorescent material, the red phosphorescent material can be at least one of (Ca, Sr, Ba) S, (Ca, Sr, Ba) 2 Si 5 N 8, CASN (CaAlSiN 3), CaMoO 4 and Eu 2 Si 5 N 8; the green fluorescent material can be yttrium aluminum garnet (YAG), (Ca, Sr, Ba) 2 SiO 4, SrGa 2 S 4, BAM, α-SiAlON, β-SiAlON, Ca 3 Sc 2 Si 3 O 12 、Tb3Al5O 12 , BaSiO4, CaAlSiON and (Sr1-xBa x )At least one material among Si2O2N2, where x can be a number between 0 and 1.

[0051] Figure 1B is a schematic structural diagram of the package body in other embodiments of the present disclosure, such as Figure 1BAs shown, in other embodiments, the package body 12 includes: a light-emitting structure, the light-emitting structure includes a light-emitting layer 12a, and the light-emitting layer 12a includes a quantum dot material, an organic light-emitting material, or a perovskite material. The organic light-emitting material includes one or more of 8-hydroxyquinoline aluminum, mCBP, DPEPO, m-ADN, and Ir(ppy)3. In addition, the light-emitting structure also includes: a first cathode 12b1, an electron transport layer 12c, a hole transport layer 12d, and a first anode 12e, wherein the first cathode 12b1 is arranged opposite to the first anode 12e, the light-emitting layer 12a is arranged between the first anode 12e and the first cathode 12b1, the electron transport layer 12c is arranged between the light-emitting layer 12a and the first cathode 12b1, and the hole transport layer 12d is located between the light-emitting layer 12a and the first anode 12e. Of course, the light-emitting structure may further include other film layers, for example, an electron injection layer located between the electron transport layer 12c and the first cathode 12b1, and / or a hole injection layer located between the hole transport layer 12d and the first anode 12e. In addition, it should be noted that the first cathode 12b1 and the electron transport layer 12c may be disposed between the light-emitting layer 12a and the first substrate 10, and the first anode 12e and the hole transport layer 12d may be disposed on the side of the light-emitting layer 12a away from the first substrate 10, or the first cathode 12b1 and the electron transport layer 12c may be disposed on the side of the light-emitting layer 12a away from the first substrate 10, and the first anode 12e and the hole transport layer 12d may be disposed between the light-emitting layer 12a and the first substrate 10.

[0052] According to the above embodiment, the package body 12 may include a color conversion layer or a light-emitting layer, each of which may include quantum dots. The quantum dot material may be one or more of ZnCdSe2, CdSe, CdTe, InP, and InAs. The quantum dots are not limited to the above materials and may be selected from II-VI compounds, III-V compounds, IV-VI compounds, Group IV elements, Group IV compounds, and / or combinations thereof.

[0053] It should be noted that the package body 12 in the embodiment of the present disclosure is not limited to the above-mentioned light-emitting structure and color conversion layer. For example, the package body 12 may include a photoelectric conversion structure. The photoelectric conversion structure may be a dye-sensitized cell, a quantum dot-sensitized solar cell, a perovskite solar cell, or a photodetector device.

[0054] In some embodiments, the overall thickness of the first encapsulation layer 11 of the stacked multi-layer inorganic layers can be controlled between 0.3 μm and 2 μm. Compared with the case where the first encapsulation layer 11 includes an organic film layer, the overall thickness of the encapsulation structure 1 is smaller, which is conducive to application in display devices.

[0055] In some embodiments, the inorganic layer 11 a of the first encapsulation layer 11 includes: a first inorganic layer 111 and a second inorganic layer 112 , wherein the second inorganic layer 112 is located on a side of the first inorganic layer 111 away from the quantum dot layer.

[0056] The material of the first inorganic layer 111 includes: SiC x N y , where 0<x≤2, 0<y≤2. SiC x N y It shows that in SiC x N y The molar ratio of silicon (Si) to carbon (C) is 1:x, and the molar ratio of silicon (Si) to nitrogen (N) is 1:y. Optionally, 0.3 < x ≤ 1.8, 0.1 < y ≤ 1.8; alternatively, 0.4 < x ≤ 1.7, 0.2 < y ≤ 1.5; alternatively, 0.5 < x ≤ 1.7, 0.2 < y ≤ 1.3. Preferably, 0.6 < x < 1.7, 0.3 < y < 1, so that the first inorganic layer 111 can better balance the stress release of the quantum dot layer. The thickness of the first inorganic layer 111 is less than or equal to 1 μm, and the stress of the first inorganic layer 111 can specifically be between -10 and 10 MPa.

[0057] The material of the second inorganic layer 112 includes a compound containing silicon and nitrogen atoms, which can be represented by SiN n , its function is to block water molecules and oxygen. Among them, 0<n≤1. SiN n It shows that in SiN n The molar ratio of silicon (Si) element to nitrogen (N) element is 1:n; preferably, SiN n The material may not contain other elements, or other elements may exist as impurities but may be ignored. Optionally, 0.2 < n ≤ 1; Optionally, 0.3 < n < 1; Preferably, 0.6 < n < 1. In this case, the second inorganic layer 112 has a dense film quality and a large Young's modulus, and the second inorganic layer 112 has few internal defects, thereby ensuring that the water vapor transmission coefficient (WVTR) of the second inorganic layer 112 is less than 10 -4 , and the structure is stable, thereby improving the reliability of the package structure 1. Optionally, the thickness of the second inorganic layer 112 is between 0.5 μm and 0.9 μm.

[0058] In some embodiments, the inorganic layer 11a of the first encapsulation layer 11 further includes a third inorganic layer 113 , which is located on a side of the second inorganic layer 112 away from the encapsulation body 12 , or between the second inorganic layer 112 and the first inorganic layer 111 .

[0059] When the inorganic layer 11a of the first encapsulation layer 11 includes the third inorganic layer 113, the stress on one of the second inorganic layer 112 and the third inorganic layer 113 may be tensile stress, and the stress on the other may be compressive stress. In this case, the stresses of the second inorganic layer 112 and the third inorganic layer 113 can be offset, so that the second inorganic layer 112 and the third inorganic layer 113 are more matched, preventing separation (peeling) between the film layers.

[0060] In some embodiments, the second inorganic layer 112 is an inorganic film layer containing oxygen atoms. Specifically, the material of the second inorganic layer 112 may include SiO m N g , where 1<m≤2, 0≤g<0.7; SiO m N g It shows that in SiO m N g The molar ratio of silicon (Si), oxygen (O), and nitrogen (N) is 1:m:g. When g=0, the inorganic layer is silicon oxide. Optionally, the thickness of the second inorganic layer 112 is between 0.1 μm and 0.3 μm.

[0061] In the above embodiment, the stress on the second inorganic layer 112 may be tensile stress, in which case the stress on the third inorganic layer 113 is compressive stress; alternatively, the stress on the second inorganic layer 112 may be compressive stress, in which case the stress on the third inorganic layer 113 is tensile stress. In the present disclosure, it is sufficient to ensure that the stresses of the second inorganic layer 112 and the third inorganic layer 113 are balanced. The stress of the film may be related to factors such as preparation conditions, thickness, and composition.

[0062] Preferably, to improve the water and oxygen isolation effect of the first encapsulation layer 11 , the second inorganic layer 112 contacts the edge of the first inorganic layer 111 , and the orthographic projection of the second inorganic layer 112 on the first substrate 10 covers the orthographic projection of the encapsulation body 12 on the first substrate 10 .

[0063] Preferably, when the third inorganic layer 113 is located between the second inorganic layer 112 and the first inorganic layer 111, the orthographic projection of the second inorganic layer 112 on the first substrate 10 covers the orthographic projection of the third inorganic layer 113 on the first substrate 10; further preferably, the orthographic projection of the third inorganic layer 113 on the first substrate 10 covers the orthographic projection of the package body 12 on the first substrate 10. Specifically, as Figure 1A As shown, the second inorganic layer 112 may include SiN nThe packaging structure 1 includes a central area MA and an edge area WA surrounding the central area MA. The packaging body 12 is located in the central area MA. The first inorganic layer 111 in the edge area WA contacts the second inorganic layer 112. The second inorganic layer 112 has an orthographic projection on the first substrate 10 covering the orthographic projection of the third inorganic layer 113 on the first substrate 10. The third inorganic layer 113 has an orthographic projection on the first substrate 10 covering the orthographic projection of the packaging body 12 on the first substrate 10.

[0064] The embodiments of the present disclosure also provide a display device, which can be any product or component with a display function, such as an OLED display panel, a QLED display panel, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or the like. Figure 2 is a schematic diagram of a display device provided in some embodiments of the present disclosure, such as Figure 2 As shown, the display device includes: the quantum dot structure in the above embodiment. In addition, it also includes: a driving structure layer 22 and a plurality of light-emitting devices 23 arranged on the first substrate 10. Among them, the first substrate 10 can be a glass substrate, or a flexible substrate made of a flexible material such as polyimide (PI), which is conducive to realizing flexible display. The driving structure layer 22 includes a plurality of pixel driving circuits, and the pixel driving circuits correspond one to one with the light-emitting devices 23. The pixel driving circuit is used to provide a driving current to the light-emitting device 23 to drive the light-emitting device 23 to emit light. For example, the pixel driving circuit includes a plurality of thin film transistors (such as Figure 3 ) and at least one capacitor.

[0065] Figure 3 Schematic diagram of the driving structure layer provided in some embodiments of the present disclosure, such as Figure 3 As shown, the thin film transistor 24 includes a gate 241, an active layer 242, a source 243 and a drain 244. Taking the thin film transistor 24 as an example of a top-gate thin film transistor, the active layer 242 is located between the gate 241 and the first substrate 10. The material of the active layer 242 may include, for example, an inorganic semiconductor material (for example, polycrystalline silicon, amorphous silicon, etc.), an organic semiconductor material, or an oxide semiconductor material. The active layer 242 includes a channel portion and a source connection portion and a drain connection portion located on both sides of the channel portion. The source connection portion is connected to the source 243 of the thin film transistor 24, and the drain connection portion is connected to the drain 244 of the thin film transistor 24. Both the source connection portion and the drain connection portion may be doped with impurities (for example, N-type impurities or P-type impurities) with a higher impurity concentration than that of the channel portion. The channel portion faces the gate 241 of the thin film transistor 24 . When the voltage signal applied to the gate 241 reaches a certain value, a carrier path is formed in the channel portion, thereby conducting the source 243 and the drain 244 of the thin film transistor 24 .

[0066] The buffer layer BFL is disposed between the thin film transistor 24 and the first substrate 10 to prevent or reduce diffusion of metal atoms and / or impurities from the first substrate 10 into the active layer 242 of the transistor. The buffer layer BFL may include an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride, and may be formed as a multilayer or single layer.

[0067] The first gate insulating layer GI1 is disposed on a side of the active layer 242 away from the buffer layer BFL. The material of the first gate insulating layer GI1 may include a silicon compound or a metal oxide. For example, the material of the first gate insulating layer GI1 includes silicon oxynitride, silicon oxide, silicon nitride, silicon oxycarbide, silicon carbide nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. Furthermore, the first gate insulating layer GI1 may be a single layer or multiple layers.

[0068] The gate electrode layer is disposed on a side of the first gate insulating layer GI1 away from the buffer layer BFL. The gate electrode layer includes the gate electrodes 241 of each thin-film transistor and the first electrode plate of the capacitor. The material of the gate electrode layer may include, for example, metals, metal alloys, metal nitrides, conductive metal oxides, and transparent conductive materials. For example, the gate electrode layer may include gold, gold alloys, silver, silver alloys, aluminum, aluminum alloys, aluminum nitride, tungsten, tungsten nitride, copper, copper alloys, nickel, chromium, chromium nitride, molybdenum, molybdenum alloys, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, tin oxide, indium oxide, gallium oxide, indium tin oxide, or indium zinc oxide. The gate electrode layer may have a single layer or multiple layers.

[0069] The second gate insulating layer GI2 is disposed on a side of the gate electrode layer away from the buffer layer BFL. The material of the second gate insulating layer GI2 may include, for example, a silicon compound or a metal oxide. For example, the material of the second gate insulating layer GI2 may include silicon oxynitride, silicon oxide, silicon nitride, silicon oxycarbide, silicon carbide nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. The second gate insulating layer GI2 may be formed as a single layer or multiple layers.

[0070] A conductive layer (not shown) is disposed on a side of the second gate insulating layer GI2 away from the buffer layer BFL. The conductive layer may include a second electrode plate of the capacitor. The material of the conductive layer may be the same as that of the first electrode plate. For details, see the conductive materials listed above.

[0071] The interlayer insulating layer ILD is disposed on a side of the conductive layer away from the buffer layer BFL. The material of the interlayer insulating layer ILD may include, for example, silicon compounds, metal oxides, etc. Specifically, the silicon compounds and metal oxides listed above may be selected and will not be described in detail here.

[0072] The source-drain conductive layer is disposed on a side of the interlayer insulating layer ILD away from the buffer layer BFL. The first source-drain conductive layer may include a source 243 and a drain 244 of each transistor. The source 243 is electrically connected to the source connector, and the drain 244 is electrically connected to the drain connector. The source-drain conductive layer may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. For example, the source-drain conductive layer may be a single layer or multiple layers of metal, such as Mo / Al / Mo or Ti / Al / Ti.

[0073] The passivation layer PVX is disposed on the side of the source / drain conductive layer away from the buffer layer BFL. The material of the passivation layer PVX may include, for example, silicon oxynitride, silicon oxide, or silicon nitride. The planarization layer PLN is disposed on the side of the passivation layer PVX away from the buffer layer BFL. The planarization layer PLN may be made of an organic insulating material, such as a resin material such as polyimide, epoxy resin, acrylic, polyester, photoresist, polyacrylate, polyamide, or siloxane.

[0074] The pixel defining layer (PDL) is located on the side of the planarization layer PLN away from the buffer layer (BFL). The pixel defining layer (PDL) has multiple pixel openings. The light-emitting devices 23 correspond one-to-one to the pixel openings. The light-emitting devices 23 include: a first electrode 231, a second electrode 232, and a light-emitting functional layer 233 located between the first electrode 231 and the second electrode 232. For example, the first electrode 231 is an anode, and the second electrode 232 is a cathode. Optionally, the first electrode 231 is a reflective electrode made of a metal material, and the second electrode 232 is a transparent electrode made of a transparent conductive material (e.g., indium tin oxide). The light-emitting functional layer 233 may include: a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer stacked in sequence. The first electrode 231 is located between the pixel defining layer (PDL) and the planarization layer PLN, and a portion of the first electrode 231 is exposed by the pixel opening. The second electrodes 232 of multiple light-emitting devices 23 may be formed into an integrated structure.

[0075] Optionally, the light emitting device 23 is an OLED device, in which case the light emitting layer uses an organic light emitting material; or the light emitting device 23 is a QLED (Quantum Dot Light Emitting Diode) device, in which case the light emitting layer uses a quantum dot light emitting material. Each light emitting device is configured to emit light of a preset color.

[0076] like Figure 2As shown, the display device further includes: a second encapsulation layer 25 and a containing structure layer 29. The second encapsulation layer 25 covers the pixel defining layer PDL and the plurality of light-emitting devices 23, and is used to encapsulate the light-emitting devices 23 to prevent water vapor and / or oxygen in the external environment from corroding the light-emitting devices 23. In some embodiments, the second encapsulation layer 25 includes a first inorganic encapsulation layer 251, a second inorganic encapsulation layer 252 and an organic encapsulation layer 253. The second inorganic encapsulation layer 252 is located on a side of the first inorganic encapsulation layer 251 away from the light-emitting devices 23, and the organic encapsulation layer 253 is located between the first inorganic encapsulation layer 251 and the second inorganic encapsulation layer 252. Both the first inorganic encapsulation layer 251 and the second inorganic encapsulation layer 252 can be made of highly dense inorganic materials such as silicon oxynitride, silicon oxide, and silicon nitride. The organic encapsulation layer 253 can be made of a polymer material containing a desiccant, or a polymer material that can block water vapor. For example, a polymer resin is used to relieve stress of the first inorganic encapsulation layer 251 and the second inorganic encapsulation layer 252 , and a water-absorbing material such as a desiccant may be included to absorb water molecules and / or oxygen molecules that penetrate into the interior.

[0077] The package body of the package structure is disposed on a side of the second package layer 25 away from the light-emitting device 23. In some embodiments, the package body includes multiple color conversion layers, each of which includes multiple light-emitting portions 121. Each light-emitting portion 121 corresponds to a light-emitting device 23. The light-emitting portion 121 is disposed on the light-emitting side of the corresponding light-emitting device 23, and the light-emitting device 23 is disposed between the light-emitting portion 121 and the first substrate 10. The light-emitting portion 121 is configured to receive light emitted by the corresponding light-emitting device 23 and emit light of the same or different color as a preset color.

[0078] In some embodiments, the light emitted by the light-emitting device 23 is blue. Optionally, the multiple light-emitting portions 121 of the color conversion layer form a plurality of repeating units, each of which includes a red light-emitting portion 12r for emitting red light, a green light-emitting portion 12g for emitting green light, and a blue light-emitting portion 12b for emitting blue light. Optionally, the blue light-emitting portion 12b may include scattering particles, and both the red light-emitting portion 12r and the green light-emitting portion 12g may include quantum dots. Of course, the red light-emitting portion 12r and the green light-emitting portion 12g may also include scattering particles.

[0079] The receiving structure layer 29 is disposed on a side of the second encapsulation layer 25 away from the first substrate 10. The receiving structure layer 29 has a plurality of receiving grooves, each corresponding to a light-emitting device 23. The light-emitting portion 121 is disposed in the receiving grooves. The material of the receiving structure layer 29 may include: acrylic polymer photoinitiator, organic pigment, resin-based organic material, and mixtures thereof.

[0080] Because ambient light also contains blue light, when the blue light in the ambient light enters the quantum dot layer, it excites the quantum dot layer to emit red or green light, thereby affecting the display effect of the display device. To prevent ambient light from interfering with the display of the display device, in some embodiments, the display device further includes a color filter layer and a black matrix BM. The color filter layer is located on the side of the color conversion layer away from the first substrate 10. The color filter layer includes multiple color filter portions 26r, 26g, and 26b. Each color filter portion 26r / 26g / 26b corresponds to a light output portion 121. The color filter portions 26r / 26g / 26b and the corresponding light output portion 121 emit the same color of light. For example, the color filter portion 26r corresponds to the red light emitting portion 12r, and the color filter portion 26r is red; the color filter portion 26g corresponds to the green light emitting portion 12g, and the color filter portion 26g is green; the color filter portion 26b corresponds to the blue light emitting portion 12b, and the color filter portion 26b is blue.

[0081] The black matrix BM is located on the side of the color conversion layer away from the first substrate 10. The black matrix BM is formed into a grid structure to define multiple sub-pixel areas, which are the areas where the light-emitting devices 23 are located. The orthographic projection of at least a portion of each light-emitting portion 121 on the first substrate 10 does not overlap with the orthographic projection of the black matrix BM on the first substrate 10.

[0082] In some embodiments, the refractive index of the multiple inorganic layers 11 a of the first encapsulation layer 11 increases sequentially in a direction away from the color conversion layer, thereby reducing light loss. Figure 4 This is a schematic diagram of the output light of the packaging structure provided in the embodiment of the present disclosure, wherein the refractive index of the first inorganic layer 111 is smaller than the refractive index of the third inorganic layer 113, and the refractive index of the third inorganic layer 113 is smaller than the refractive index of the second inorganic layer 112. At this time, when the light emitted from the light output portion 121 passes through the first inorganic layer 111, the third inorganic layer 113 and the second inorganic layer 112 in sequence, the angle between the output direction of the light and the thickness direction of the display device gradually decreases, thereby reducing or preventing the light from entering the black matrix BM.

[0083] In some embodiments, for light with a wavelength between 440 nm and 450 nm, the refractive index of the first inorganic layer 111 is between 1.3 and 1.6, the refractive index of the second inorganic layer 112 is between 1.4 and 1.8, and the refractive index of the third inorganic layer 113 is between 1.6 and 2.0, thereby minimizing light loss.

[0084] like Figure 2 As shown, a protective layer 27 is provided on the side of the color filter layer away from the first substrate 10 to protect the color filter layer and the structures below it. An optical adhesive layer 28 and a cover plate 30 are provided on the side of the protective layer 27 away from the first substrate 10, with the optical adhesive layer 28 located between the protective layer 27 and the cover plate 30.

[0085] Figure 5 is a schematic diagram of a display device provided in some other embodiments of the present disclosure, and Figure 4 The display device shown is identical to the Figure 5 In the display device shown, the display device includes a packaging structure, a driving structure layer 22, a light-emitting device 23, a color filter layer and a black matrix BM, wherein the packaging body of the packaging structure includes a color conversion layer, and the color conversion layer includes a plurality of light-emitting portions 121, each light-emitting portion 121 is arranged on the light-emitting side of the corresponding light-emitting device 23, and the light-emitting portion 121 is arranged in the receiving groove of the receiving structure layer 29. The specific structure of the light-emitting device 23, the material of the light-emitting portion 121, the material of the receiving structure layer 29, the specific structure of the driving structure layer 22 and the color filter layer are described above. Figure 4 The description of the structure will not be repeated here.

[0086] and Figure 4 The difference is that in Figure 5 In the display device shown, the driving structure layer 22 and the light-emitting device 23 are disposed on a second substrate 40, with the driving structure layer 22 located between the light-emitting device 23 and the second substrate 40. The second substrate 40 is disposed opposite the first substrate 10, and the second encapsulation layer 25 is disposed on a side of the light-emitting device 23 away from the second substrate 40. The color conversion layer is disposed on the side of the first substrate 10 facing the second substrate 40, and the first encapsulation layer 11 is disposed between the color conversion layer and the light-emitting device 23.

[0087] In addition, the color filter layer and the black matrix BM are both disposed between the first encapsulation layer 11 and the first substrate 10. The first encapsulation layer 11 encapsulates the color conversion layer while also encapsulating the color filter layer and the black matrix BM. A sealant 50 is also disposed between the first substrate 10 and the second substrate 40. The sealant 50 surrounds the display area of ​​the display device. A filler material 60 is also disposed within the area surrounded by the sealant 50. At least a portion of the filler material 60 is located between the second encapsulation layer 25 and the first encapsulation layer 11. Furthermore, because the filler material 60 and the sealant 50 can act to block water molecules and oxygen, an organic encapsulation layer need not be disposed between the first inorganic encapsulation layer 251 and the second inorganic encapsulation layer 252 of the second encapsulation layer 25.

[0088] Figure 5 When manufacturing the display device shown in the figure, a color filter layer, a black matrix BM, a receiving structure layer 29, a color conversion layer, and a first encapsulation layer 11 can be formed on the first substrate 10, and a driving structure layer 22, a light-emitting device 23, and a second encapsulation layer 25 can be formed on the second substrate 40. A sealant 50 and a filling material 60 can be formed on at least one of the first substrate 10 and the second substrate 40. After that, the first substrate 10 and the second substrate 40 are assembled to form a box. Figure 5 The display device shown.

[0089] Figure 6 This is a flow chart of a method for preparing a packaging structure provided in some embodiments of the present disclosure. Figure 6 As shown, the preparation method comprises:

[0090] S1. Forming a package body on a first substrate.

[0091] S2. Forming a first encapsulation layer on a side of the encapsulation body away from the first substrate. Step S2 specifically includes sequentially forming multiple inorganic layers, wherein the multiple inorganic layers are stacked. The multiple inorganic layers include a first inorganic layer closest to the encapsulation body, wherein the first inorganic layer contains carbon atoms and nitrogen atoms.

[0092] The encapsulation structure may be a color conversion layer, which may include organic light-emitting materials or quantum dots. The color conversion layer may be formed directly on a flexible or rigid substrate; or the light-emitting device, the second encapsulation layer and other structures may be formed on the first substrate first, and then the color conversion layer may be formed on the second encapsulation layer to prepare a color conversion layer. Figure 4 The structure shown in FIG. 1 may also be formed on the first substrate firstly by forming a color filter layer and a black matrix structure, and then forming a color conversion layer on the color filter layer, thereby preparing Figure 5 The structure shown.

[0093] In some embodiments, each inorganic layer is formed using a vapor deposition (CVD) process, which helps reduce the thickness of the inorganic layer. In addition, the inorganic layer formed using the vapor deposition process has good coating properties, which helps improve the reliability of the quantum dot structure. In the actual preparation process, multiple inorganic layers can be continuously deposited in a CVD device, which helps save time for completing the entire process and reduce process complexity. Of course, in the actual preparation process, after each layer of inorganic layer is deposited, the substrate or display panel can be removed from the deposition device and then placed in the deposition device for deposition of the next layer of inorganic layer. Producing multiple inorganic layers using the same process can improve production efficiency. Specifically, for example, the first encapsulation layer includes: a first inorganic layer, a third inorganic layer, and a second inorganic layer, which are arranged in sequence in a direction away from the quantum dot layer. For example, the deposition time of each inorganic layer is less than or equal to 10 minutes, and the total deposition time of the three inorganic layers does not exceed 30 minutes to improve production efficiency.

[0094] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A display device, comprising: a plurality of light emitting devices, each configured to emit light of a predetermined color; a second encapsulation layer, the second encapsulation layer covering the plurality of light-emitting devices, the second encapsulation layer comprising a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially arranged in a direction away from the light-emitting devices; A packaging structure, comprising: first base; A color conversion layer is provided on the first substrate; the color conversion layer includes a plurality of light emitting portions, each corresponding to a light emitting device, the light emitting portion being provided on a light emitting side of the corresponding light emitting device, the light emitting portion being configured to receive light emitted by the corresponding light emitting device and emit light of the same or different color as the preset color; a first encapsulation layer, disposed on a side of the color conversion layer away from the first substrate, for encapsulating the color conversion layer; the first encapsulation layer comprises at least two inorganic layers stacked in sequence, wherein the at least two inorganic layers include a first inorganic layer closest to the color conversion layer, and the first inorganic layer contains carbon atoms and nitrogen atoms; The at least two inorganic layers further include a second inorganic layer and a third inorganic layer, wherein the material of the second inorganic layer includes SiN n , wherein 0<n≤1; the third inorganic layer is located between the second inorganic layer and the first inorganic layer; the material in the third inorganic layer includes SiO m N g , wherein 1<m≤2, 0≤g<0.7; the stress on one of the second inorganic layer and the third inorganic layer is tensile stress, and the stress on the other is compressive stress; The encapsulation structure includes a central area and an edge area surrounding the central area, the color conversion layer is located in the central area, the first inorganic layer and the second inorganic layer in the edge area are in contact, the orthographic projection of the second inorganic layer on the first substrate covers the orthographic projection of the third inorganic layer on the first substrate, and the orthographic projection of the third inorganic layer on the first substrate covers the orthographic projection of the color conversion layer on the first substrate.

2. The display device according to claim 1, wherein The material of the first inorganic layer includes SiC x N y , where 0<x≤2, 0<y≤2.

3. The display device according to claim 2, wherein: 0.6＜n＜1。 4. The display device according to any one of claims 1 to 3, wherein: The refractive indices of the at least two inorganic layers increase sequentially in a direction away from the color conversion layer.

5. The display device according to any one of claims 1 to 3, wherein: There are three inorganic layers. Along the direction away from the color conversion layer, the refractive index ranges of the three inorganic layers are: 1.3-1.6; 1.4-1.8; 1.6-2.0 respectively.

6. The display device according to any one of claims 1 to 3, wherein: The thickness of the first encapsulation layer is between 0.3 μm and 2 μm.

7. The display device according to any one of claims 1 to 3, wherein: The color conversion layer includes quantum dots.

8. The display device according to any one of claims 1 to 3, wherein: The light emitting device is disposed between the color conversion layer and the first substrate.

9. The display device according to any one of claims 1 to 3, wherein: The display device further includes: a second substrate, the second substrate is arranged opposite to the first substrate, the light-emitting device is arranged on the second substrate, the color conversion layer is arranged on the side of the first substrate facing the second substrate, and the first encapsulation layer is located between the color conversion layer and the light-emitting device.

10. The display device according to any one of claims 1 to 3, wherein: The preset color is blue, and the multiple light-emitting parts of the color conversion layer form multiple repeating units, each of the repeating units including: a red light-emitting part for emitting red light, a green light-emitting part for emitting green light, and a blue light-emitting part for transmitting blue light.

11. The display device according to any one of claims 1 to 3, wherein: The display device further includes: a second encapsulation layer, wherein the second encapsulation layer covers the plurality of light-emitting devices; The accommodating structure layer is arranged on a side of the second encapsulation layer away from the light-emitting device. The accommodating structure layer has a plurality of accommodating grooves, each of the accommodating grooves corresponds to the light-emitting device one by one, and the light-emitting portion is arranged in the accommodating grooves.

12. The display device according to any one of claims 1 to 3, wherein: The display device further includes: a color filter layer located on a side of the color conversion layer away from the light-emitting device, the color filter layer comprising a plurality of color filter portions, each of the color filter portions corresponding to one of the light-emitting portions, the color of the color filter portion being the same as the color of the light emitted by the corresponding light-emitting portion; A black matrix is ​​located on a side of the color conversion layer away from the light-emitting device; wherein the orthographic projection of at least a portion of each of the light-emitting portions on the first substrate does not overlap with the orthographic projection of the black matrix on the first substrate.

13. A method for preparing a display device, comprising: forming a plurality of light-emitting devices and packaging structures respectively, wherein the light-emitting devices are configured to emit light of a preset color; The steps of forming the packaging structure include: A color conversion layer is formed on the first substrate; the color conversion layer includes a plurality of light emitting portions, each corresponding to a light emitting device, and arranged on a light emitting side of the corresponding light emitting device, and configured to receive light emitted by the corresponding light emitting device and emit light of the same or different color as the preset color; forming a first encapsulation layer on the color conversion layer away from the first substrate; wherein the step of forming the first encapsulation layer comprises: sequentially forming at least two inorganic layers, wherein the at least two inorganic layers include a first inorganic layer closest to the color conversion layer, and the first inorganic layer contains carbon atoms and nitrogen atoms; The at least two inorganic layers further include a second inorganic layer and a third inorganic layer, wherein the material of the second inorganic layer includes SiN n , wherein 0<n≤1; the third inorganic layer is located between the second inorganic layer and the first inorganic layer; the material in the third inorganic layer includes SiO m N g , wherein 1<m≤2, 0≤g<0.7; the stress on one of the second inorganic layer and the third inorganic layer is tensile stress, and the stress on the other is compressive stress; The encapsulation structure includes a central area and an edge area surrounding the central area, the color conversion layer is located in the central area, the first inorganic layer and the second inorganic layer in the edge area are in contact, the orthographic projection of the second inorganic layer on the first substrate covers the orthographic projection of the third inorganic layer on the first substrate, and the orthographic projection of the third inorganic layer on the first substrate covers the orthographic projection of the color conversion layer on the first substrate.

14. The preparation method according to claim 13, wherein Each of the inorganic layers is formed by a vapor deposition process.

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