Flash voltage self-adapting regulation method, system and storage device

Abstract

The embodiment of the application discloses a flash memory voltage self-adaptive adjusting method, system and storage device, the method comprises the following steps: when the identification number of the NAND particle is read, the working voltage supported by the NAND particle is determined based on the identification number of the NAND particle; the current power supply voltage of the NAND particle is compared with the working voltage supported by the NAND particle to determine whether to adjust the voltage; if the voltage is adjusted, a voltage adjustment signal is sent to control the power supply switching module to adjust the power supply voltage of the NAND particle. The embodiment of the application realizes the adaptive adjustment of the power supply voltage of the NAND particle, avoids the risk of damage of the NAND particle due to the too high power supply voltage, and the process does not need to be adjusted by manpower, saves the human resources, and improves the use efficiency of the NAND particle.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of flash memory technology, and in particular to a flash memory voltage self-adaptive adjusting method, system and storage device. BACKGROUND

[0002] NAND flash memory (NAND particle) technology is the mainstream storage technology in the era of Internet + big data, and has the characteristics of fast read-write speed and high storage density. When using NAND flash memory, a fixed VCC voltage output is usually set, for example, if the VCC voltage of the NAND particle used is 3.3V, the output of 3.3V power supply is preset, so that the NAND particle can provide 3.3V voltage as soon as it is powered on. That is, the power supply voltage is a fixed value, and it is 3.3V every time it is powered on again, so the fixed voltage power supply scheme can only be applied to NAND particles with a VCC voltage of 3.3V.

[0003] With the progress of NAND particle technology, there are now NAND particles that support lower voltages (such as 2.5V VCC). If the fixed voltage power supply scheme is not adjusted, it cannot support 2.5V VCC voltage for NAND particles, but if the fixed voltage power supply scheme supports 2.5V VCC voltage, it needs to replace the NAND particles suitable for the power supply voltage, which easily causes the investment of manpower and material resources. Therefore, how to adaptively adjust the power supply voltage of the NAND particle is a problem that needs to be solved. SUMMARY

[0004] Therefore, in order to solve the problems of the prior art, the present application provides a flash memory voltage self-adaptive adjusting method, system and storage device.

[0005] In a first aspect, the present application provides a flash memory voltage self-adaptive adjusting method, comprising:

[0006] When the identification number of the NAND particle is read, the working voltage supported by the NAND particle is determined based on the identification number of the NAND particle;

[0007] The current power supply voltage of the NAND particle is compared with the working voltage supported by the NAND particle to determine whether to adjust the voltage;

[0008] If the voltage is adjusted, a voltage adjustment signal is sent to control the power supply switching module to adjust the power supply voltage of the NAND particle.

[0009] In an optional embodiment, it further comprises:

[0010] If the identification number of the NAND particle is not read, the voltage adjustment signal is sent to control the power switching module to adjust the power supply voltage of the NAND particle.

[0011] In an optional embodiment, the process of determining whether to perform voltage adjustment comprises:

[0012] If the current power supply voltage of the NAND particle does not match the working voltage supported by the NAND particle, it is determined to perform voltage adjustment.

[0013] If the current power supply voltage of the NAND particle matches the working voltage supported by the NAND particle, it is determined not to perform voltage adjustment.

[0014] In an optional embodiment, it further comprises:

[0015] After adjusting the power supply voltage of the NAND particle, the NAND particle is restarted to access the adjusted power supply voltage to the NAND particle and to solidify the adjusted power supply voltage.

[0016] In a second aspect, the present application provides a flash memory voltage self-adaptive adjustment system, comprising:

[0017] The storage master is configured to, when the identification number of the NAND particle is read, determine the working voltage supported by the NAND particle based on the identification number of the NAND particle, compare the current power supply voltage of the NAND particle with the working voltage supported by the NAND particle to determine whether to adjust the power supply voltage, and send a voltage adjustment signal if the power supply voltage needs to be adjusted.

[0018] The power switching module is configured to receive the voltage adjustment signal to adjust the current power supply voltage of the NAND particle.

[0019] In an optional embodiment, the storage master is further configured to, if the identification number of the NAND particle is not read, send the voltage adjustment signal to control the power switching module to adjust the current power supply voltage of the NAND particle.

[0020] In an optional embodiment, the power switching module comprises a power conversion unit, a switching device, an inductor, a first resistor, a second resistor and a third resistor.

[0021] One end of the power conversion unit is connected to one end of the inductor, the first resistor, the second resistor and the third resistor respectively, and the other end of the power conversion unit is connected to the power supply voltage.

[0022] Another end of the inductor is connected to one end of the first resistor, another end of the first resistor is connected to one end of the second resistor, one end of the second resistor is also connected to one end of the third resistor, another end of the second resistor is grounded;

[0023] Another end of the third resistor is used to be grounded through the switching device;

[0024] The switching device is used to be connected to the storage master, and the storage master is used to send the voltage adjustment signal to control the switching device to be turned on, so as to adjust the feedback voltage signal received by the power conversion unit;

[0025] The power conversion unit is used to output the working voltage supported by the NAND grain according to the state of the feedback voltage signal.

[0026] In an optional embodiment, the power switching module includes two power voltage branches for providing VCC voltage, and is used to switch from one power voltage branch to another power voltage branch for power voltage output when the voltage adjustment signal is received.

[0027] In a third aspect, the present application provides a storage device, which includes a memory and at least one processor, the memory stores a computer program, and the processor is used to execute the computer program to implement the flash memory voltage adaptive adjustment method according to any one of the preceding aspects.

[0028] In a fourth aspect, the present application provides a computer storage medium, which stores a computer program, and the computer program is executed to implement the flash memory voltage adaptive adjustment method according to any one of the preceding aspects.

[0029] The embodiments of the present application have the following beneficial effects:

[0030] The present embodiment determines the working voltage supported by the NAND grain by reading the identification number of the NAND grain, and compares the current power voltage of the NAND grain with the supported working voltage to determine whether to adjust the voltage, and sends a voltage adjustment signal when adjusting the voltage, so that the power switching module adjusts the power voltage of the NAND grain through the voltage adjustment signal, thereby realizing the adaptive adjustment of the power voltage of the NAND grain, avoiding the risk of damage of the NAND grain due to the too high power voltage, and saving the human resources without manual adjustment, and improving the use efficiency of the NAND grain. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the present application, the following will briefly introduce the drawings needed in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope of protection of the present application. In the various drawings, similar components are denoted by similar reference numerals.

[0032] Figure 1 An embodiment of the flash memory voltage adaptive adjustment method in the embodiment of the present application is shown in a schematic diagram;

[0033] Figure 2 An embodiment of the flash memory voltage adaptive adjustment method in the embodiment of the present application is shown in a schematic diagram;

[0034] Figure 3 Another embodiment of the flash memory voltage adaptive adjustment method in the embodiment of the present application is shown in a schematic diagram;

[0035] Figure 4 The structure of the flash memory voltage adaptive adjustment system in the embodiment of the present application is shown in a schematic diagram;

[0036] Figure 5 The hardware connection of the power switching module in the embodiment of the present application is shown in a schematic diagram. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described in detail below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments.

[0038] The components of the embodiments of the present application generally described and shown in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0039] In the following, the terms "include", "have", and their conjugates, used in various embodiments of the present application, are only intended to indicate that specific features, numbers, steps, operations, elements, components, or combinations thereof are present, and should not be understood as excluding the presence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations thereof.

[0040] In addition, the terms "first", "second", "third", etc. are only used for differentiation in description, and should not be understood as indicating or implying relative importance.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present application belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined in various embodiments of the present application.

[0042] NAND particles, used to constitute a NAND Flash memory, are a kind of flash memory.

[0043] GPIO (General-purpose input / output), a general-purpose input / output, whose pin can be freely used by the user through programming.

[0044] The existing fixed voltage scheme can only be used for NAND particles with a power supply voltage (VCC voltage) of 3.3V. With the progress of NAND particle technology, there now exist NAND particles that support lower power supply voltages (such as a 2.5V VCC voltage), and therefore, if the power supply voltage to the NAND particles is not adjusted, the NAND particles cannot support a 2.5V voltage. If the original scheme is to support a 2.5V VCC voltage, then the materials need to be replaced, resulting in the investment of manpower and material resources. In view of this, the embodiments of the present application provide a flash memory voltage adaptive adjustment method to solve the above technical problems.

[0045] Embodiment 1

[0046] The present embodiment provides a flash memory voltage adaptive adjustment method, please refer to Figure 1 , the following detailed description of an embodiment of the flash memory voltage adaptive adjustment method.

[0047] S10, when the identification number of the NAND particle is read, based on the identification number of the NAND particle, the working voltage supported by the NAND particle is determined.

[0048] See also Figure 2 , Figure 2As shown in FIG. 1, it is a schematic diagram of a voltage self-adaptive adjusting method for a flash memory. When a disk containing NAND particles (NAND flash memory) is accessed by a host, a power switching module supplies power to the NAND particles according to a preset power supply voltage. For example, when supplying power to the NAND flash particles, two power supply voltages are needed, one is VCC voltage (core voltage), usually 3.3V, and the other is VCCQ voltage (IO voltage), usually 1.8V. The power conversion unit in the power switching module can make the NAND particles work normally through the two power supply voltages.

[0049] When the disk is powered on, the power switching module will output a fixed VCC voltage to the NAND particles by default to supply power, and then the storage host reads the identification number (i.e. flash ID) of the NAND particles. During this process, if the storage host cannot read the identification number of the NAND particles, the storage host directly sends a voltage adjustment signal to the power switching module to control the power switching module to adjust the power supply voltage of the NAND particles. It should be noted that the adjustment of the power supply voltage of the NAND particles in the embodiment refers to the adjustment of the VCC voltage (core voltage) of the NAND particles.

[0050] When the storage host normally reads the identification number of the NAND particles, the identification number is compared with each identification number in the preset NAND particle identification number database (hereinafter referred to as database) according to the identification number, and the basic information of the NAND particles corresponding to the identification number is extracted, including but not limited to the type, manufacturer, characteristic information of the NAND particles, etc., so that the working voltage supported by the NAND particles can be obtained correspondingly.

[0051] S20, comparing the current power supply voltage of the NAND particles with the working voltage supported by the NAND particles to determine whether to adjust the voltage.

[0052] As a feasible implementation manner, as shown in FIG. 2, step S20 can specifically include the following steps: Figure 3

[0053] S21, judging whether the current power supply voltage of the NAND particles matches the working voltage supported by the NAND particles.

[0054] S22, if the current power supply voltage of the NAND particles does not match the working voltage supported by the NAND particles, it is determined to adjust the voltage.

[0055] S23, if the current power supply voltage of the NAND particles matches the working voltage supported by the NAND particles, it is determined not to adjust the voltage.

[0056] ​Specifically, the current supply voltage of the NAND particle is compared with the working voltage supported by the NAND particle to determine whether to adjust the supply voltage of the NAND particle. If the current supply voltage of the NAND particle is lower or higher than the working voltage supported by the NAND particle, it is determined that the supply voltage provided by the power switching module for the NAND particle is not suitable for the NAND particle, and it is determined to adjust the supply voltage of the NAND particle. If the current supply voltage of the NAND particle is equal to the working voltage supported by the NAND particle, it is determined that the supply voltage provided by the power switching module for the NAND particle is the supported voltage of the NAND particle, and it is determined not to adjust the supply voltage of the NAND particle.

[0057] S30, if the voltage adjustment is performed, a voltage adjustment signal is sent to control the power switching module to adjust the supply voltage of the NAND particle.

[0058] When it is determined to perform voltage adjustment, the storage master sends a voltage adjustment signal to the power switching module, so that the power switching module can adaptively adjust the supply voltage of the NAND by the voltage adjustment signal, thereby realizing automatic adjustment of the supply voltage of the NAND particle.

[0059] Optionally, after adjusting the supply voltage of the NAND particle, the NAND particle is restarted, the storage master controls the power switching module to output the adjusted supply voltage to the NAND particle, and solidifies the adjusted supply voltage, so that the NAND particle accesses the supply voltage after each restart during use.

[0060] The embodiment determines the rated voltage of the NAND particle by reading the identification number of the NAND particle, and compares the working voltage of the NAND particle with the rated voltage. When the two are inconsistent, a voltage adjustment signal is sent according to the rated voltage applicable to the NAND particle, so that the power conversion unit adjusts the supply voltage of the NAND particle by the voltage adjustment signal, thereby realizing adaptive adjustment of the supply voltage of the NAND particle, avoiding the risk of damage of the NAND particle due to too high working voltage, and the process is a dynamic adjustment process, without the need for manual adjustment, saving human resources and improving the use efficiency of the NAND particle.

[0061] Embodiment 2

[0062] Please refer to Figure 4 The embodiment provides a flash memory voltage adaptive adjustment system, which is described in detail below.

[0063] The storage controller 41 is configured to determine the working voltage supported by the NAND flash 42 based on the identification number of the NAND flash 42 when the identification number of the NAND flash 42 is read, and compare the current supply voltage of the NAND flash 42 with the working voltage supported by the NAND flash 42 to determine whether the supply voltage needs to be adjusted, and send a voltage adjustment signal if the supply voltage needs to be adjusted.

[0064] The power switching module 43 is configured to receive the voltage adjustment signal to adjust the current supply voltage of the NAND flash 42.

[0065] As shown in Figure 2 and Figure 4 , the storage controller 41 communicates with a host (HOST) and is communicatively connected to the NAND flash 42 and the power switching module 43. The power switching module 43 supplies power to the disk (including the storage controller 41, the NAND flash, and other peripheral devices, etc., wherein the storage controller 41 can be an SSD controller chip, etc.) through a preset power supply. For example, the power switching module 43 provides a fixed VCC voltage to the disk for power supply, and the VCC voltage is usually 3.3V.

[0066] Further, the power switching module 43 supplies power to the NAND flash 42 through the disk. For example, the VCC voltage of the accessed NAND flash 42 is 3.3V, and the power supply on the disk is usually preset to output 3.3V. Thus, the disk can provide a voltage of 3.3V to the NAND flash 42 when powered on. The supply voltage is a fixed value, i.e., 3.3V every time the NAND flash 42 is restarted and powered on, and the storage controller 41 can control the output enable of the power switching module 43.

[0067] When the host accesses the NAND flash 42, the internal production tool of the host can perform production operation on the entire disk. When the host performs production operation on the NAND flash 42, the storage controller 41 reads the identification number of the NAND flash 42, compares the identification number of the NAND flash 42 with the identification number in the preset database in the production tool, extracts the basic information of the NAND flash 42 corresponding to the identification number, including but not limited to the type of the NAND flash 42, the manufacturer, the characteristic information of the NAND flash 42, etc., to determine the working voltage supported by the NAND flash 42.

[0068] The current supply voltage of the NAND particle 42 is compared with the working voltage supported by the NAND particle 42 to determine whether to adjust the supply voltage of the NAND particle 42. If the current supply voltage of the NAND particle 42 is lower or higher than the working voltage supported by the NAND particle 42, it is determined that the supply voltage provided by the power switching module 43 for the NAND particle 42 is not suitable for the NAND particle 42, and it is determined to adjust the supply voltage of the NAND particle 42. If the current supply voltage of the NAND particle 42 is equal to the working voltage supported by the NAND particle 42, it is determined that the supply voltage provided by the power switching module 43 for the NAND particle 42 is the working voltage supported by the NAND particle 42, and it is determined not to adjust the supply voltage of the NAND particle 42. When it is determined to adjust the voltage, the storage host 41 sends a voltage adjustment signal to the power switching module 43, and the power switching module 43 adjusts the output power after receiving the voltage adjustment signal, thereby realizing the adaptive adjustment of the supply voltage of the NAND particle 42.

[0069] In the embodiment, the storage host 41 is further configured to send the voltage adjustment signal to the power switching module 43 directly if the identification number of the NAND particle 42 cannot be read. That is, when the host performs the mass production operation on the NAND particle 42, if the storage host 41 cannot read the identification number of the NAND particle 42, the storage host 41 sends the voltage adjustment signal to the power switching module 43 directly, and the power switching module 43 adjusts the output supply voltage after receiving the voltage adjustment signal.

[0070] Optionally, the host is further configured to restart the connection with the NAND particle 42 after the power switching module 43 adjusts the supply voltage of the NAND particle 42, and the power switching module 43 is further configured to input the adjusted supply voltage to the NAND particle 42 when the host restarts the connection with the NAND particle 42, and set the adjusted supply voltage as the default output voltage of the power switching module 43, so that the power switching module 43 outputs the supply voltage by default every time the disk is powered on.

[0071] For example, the power switching module 43 is a voltage regulator, and the supply voltage of the NAND particle 42 is a working voltage of the voltage regulator. Figure 5As shown, it is a hardware connection diagram of the power switching module 43; the power switching module 43 includes a power conversion unit 431, a switching device 432, an inductor L1, a first resistor R1, a second resistor R2 and a third resistor R3; one end of the power conversion unit 431 is connected to one end of the inductor L1, the first resistor R1, the second resistor R2 and the third resistor R3 respectively, and the other end of the power conversion unit 431 is connected to a power supply voltage; the other end of the inductor L1 is connected to one end of the first resistor R1, the other end of the first resistor R1 is connected to one end of the second resistor R2, one end of the second resistor R2 is also connected to one end of the third resistor R3, and the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is used to be grounded through the switching device 432; the switching device 432 is used to connect the storage master control 41, and the storage master control 41 is used to send a voltage adjustment signal to control the switching device 432 to be turned on, so as to adjust the feedback voltage signal received by the power conversion unit 431; the power conversion unit 431 is used to output the working voltage supported by the NAND particles 42 according to the state of the feedback voltage signal.

[0072] Specifically, the storage master control 41 can control the opening and closing of the switching device 432. When the switching device 432 is closed, the resistor R3 will not be connected to the circuit, so that the voltage division generated by the resistor R1 and the resistor R2 will not change, at this time, the state of the feedback voltage signal (VFB) received by the power conversion unit 431 will not change; when the switching device 432 is opened, the resistor R3 is connected to the circuit, the resistor R1 and the resistor R2 and the resistor R3 are combined, so that the voltage division changes, at this time, the state of the feedback voltage signal (VFB) received by the power conversion unit 431 changes, and then the power conversion unit 431 outputs the working voltage supported by the NAND particles 42 according to the state of the feedback voltage signal, so as to realize the adjustment of the output voltage (VOUT) of the power conversion unit 431, wherein the output voltage is the power supply voltage provided by the power conversion unit 431.

[0073] For example, the NAND particles 42 access the host, the power conversion unit 431 defaults to output a 2.5V voltage to power the disk, and at this voltage, the ID number of the NAND particles 42 can be read. When the disk is powered on, the production tool of the host is opened and ready to start production, the production tool identifies the disk to be produced and starts production. The storage controller 41 reads the identification number of the NAND particles and compares it with the identification number in the database of the production tool to determine that the voltage supported by the NAND particles 42 corresponding to the identification number is 3.3V, that is, the NAND particles 42 need to operate normally at a power supply voltage of 3.3V; at this time, the switch device 432 of the power conversion unit 431 is controlled to be turned on through the GPIO port, at this time, the equivalent resistance of the parallel resistance changes, VFB changes, and VOUT output becomes 3.3V. Then, the storage controller 41 keeps the switch device 432 of the power conversion unit 431 turned on, and at the same time, restarts the power supply of the NAND particles 42 to continue the production operation, and solidifies the default output voltage of the power conversion unit 431, so that after the production is completed, the power conversion unit 431 always defaults to output a 3.3V power supply voltage every time the disk is powered on.

[0074] It is worth noting that, Figure 5 The hardware connection diagram of the storage controller 41 realizes the adjustment of the output voltage of the power conversion unit 431 through the parallel connection of the resistance R2 and the resistance R3. Actually, the adjustment of the output voltage can also be realized through the parallel connection of the resistance R1 and the resistance R3, and the effects realized by the two are consistent, which will not be described here.

[0075] Optionally, the adaptive adjustment of the power supply voltage of the NAND particles 42 can also be realized by adding a single-chip microcomputer on the disk, wherein the storage controller 41 communicates with the single-chip microcomputer, the single-chip microcomputer controls the power conversion unit 431, the disk is started, the single-chip microcomputer controls the power supply voltage to be 2.5V, and then judges whether the voltage needs to be switched according to the instruction of the storage controller 41.

[0076] Optionally, the power switching module 43 can include two power supply voltage branches providing core voltages, for switching from the current power supply voltage branch to another power supply voltage branch for power supply voltage output when receiving a voltage adjustment signal. That is, the power switching module 43 is realized based on one power supply in the above embodiment, but this embodiment can also be realized by replacing it with two power supplies, that is, one fixedly outputs a 3.3V VCC voltage, and the other outputs a 2.5V VCC voltage, and the storage controller 41 selects one of the VCC voltages to supply the NAND particles 42 according to the actual voltage demand of the NAND particles 42.

[0077] Optionally, the preset identification number database can not be placed in the mass production tool, and a storage device (such as an EEPROM) can be arranged on the disk, the preset identification number database is placed in the storage device, and the identification number of the read NAND grain 42 is compared with the identification number of the database in the storage device to determine.

[0078] In the embodiment, after the NAND grain 42 is powered on, the identification number of the NAND grain 42 is read by the storage master control 41, the current power supply voltage of the NAND grain 42 is compared with the supported working voltage to determine whether to perform voltage adjustment, and when the voltage adjustment is performed, a voltage adjustment signal is sent, and the power supply unit 431 automatically switches the power supply voltage required by the NAND grain 42 according to the adjustment signal, so that the adaptive adjustment of the power supply voltage of the NAND grain 42 is realized, and the risk of damage of the NAND grain 42 due to the excessively high power supply voltage is avoided; and the embodiment can automatically adjust the output power supply voltage, and does not need to repeatedly adjust different types of NAND grains 42 by manpower to adapt to the fixed output power supply voltage, so that the manpower resources are saved, and the embodiment can better meet the needs of multiple types of NAND grains 42, and the efficiency of the disk use is improved.

[0079] The embodiment of the application further provides a storage device such as an SSD, etc., which comprises a memory and at least one processor, the memory stores a computer program, and the processor is used to execute the computer program to implement the flash memory voltage adaptive adjustment method of the above-mentioned embodiment.

[0080] The memory can comprise a program storage area and a data storage area, wherein the program storage area can store an operating system and application programs required by at least one function; and the data storage area can store data (such as the power supply voltage of the NAND grain) created according to the use of the computer device, etc. In addition, the memory can comprise a high-speed random access memory, and can further comprise a non-volatile memory, for example, at least one magnetic disk storage device, a flash memory device, or other volatile solid-state storage device.

[0081] The embodiment of the application further provides a computer readable storage medium, which stores computer executable instructions, and when the computer executable instructions are called and run by a processor, the computer executable instructions cause the processor to run the steps of the flash memory voltage adaptive adjustment method of the above-mentioned embodiment.

[0082] In several embodiments provided in the present application, it should be understood that the disclosed apparatus and method can also be implemented by other manners. The apparatus embodiments described above are merely illustrative, for example, the flowcharts and structural diagrams in the drawings show the possible implementation architecture, function and operation of the apparatus, method and computer program product according to the embodiments of the present application. In this regard, each block in the flowchart or block diagram can represent a module, a program segment or a part of code, which contains one or more executable instructions for implementing the specified logic function. It should also be noted that in alternative implementation manners, the functions noted in the blocks can also occur in different order from that noted in the drawings. For example, two consecutive blocks can actually be executed substantially in parallel, and they can also be executed in reverse order, depending on the functions involved. It should also be noted that each block in the structural diagram and / or flowchart, and the combination of blocks in the structural diagram and / or flowchart, can be implemented by a dedicated hardware-based system for executing the specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0083] In addition, each functional module or unit in the embodiments of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0084] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the present application essentially or the part of the prior art that contributes to the technical solutions or the part of the technical solutions can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which can be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.

[0085] The above description is merely a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed in the present application, which should be covered within the protection scope of the present application.

Claims

1. A method for voltage self-adapting adjustment of a flash memory, characterized in that, The method comprises the following steps: When the identification number of the NAND particle is read, the working voltage supported by the NAND particle is determined based on the identification number of the NAND particle; The current supply voltage of the NAND particle is compared with the working voltage supported by the NAND particle to determine whether to adjust the voltage; If the voltage is to be adjusted, a voltage adjustment signal is sent to control the power switching module to adjust the supply voltage of the NAND particle; After adjusting the supply voltage of the NAND particle, the NAND particle is restarted to access the adjusted supply voltage to the NAND particle and to solidify the adjusted supply voltage.

2. The flash voltage self-adapting adjustment method of claim 1, wherein, The method further comprises the following steps: If the identification number of the NAND particle cannot be read, the voltage adjustment signal is sent to control the power switching module to adjust the supply voltage of the NAND particle.

3. The flash voltage self-adapting adjustment method of claim 1, wherein, The process of determining whether to adjust the voltage comprises the following steps: If the current supply voltage of the NAND particle does not match the working voltage supported by the NAND particle, it is determined to adjust the voltage; If the current supply voltage of the NAND particle matches the working voltage supported by the NAND particle, it is determined not to adjust the voltage.

4. A flash memory voltage self-adapting regulation system, characterized in that, The method comprises the following steps: A storage host is used to determine the working voltage supported by the NAND particle based on the identification number of the NAND particle when the identification number of the NAND particle is read; the current supply voltage of the NAND particle is compared with the working voltage supported by the NAND particle to determine whether to adjust the supply voltage; If the supply voltage needs to be adjusted, a voltage adjustment signal is sent; A power switching module is used to receive the voltage adjustment signal to adjust the current supply voltage of the NAND particle; The storage host is further used to restart the NAND particle after adjusting the supply voltage of the NAND particle to access the adjusted supply voltage to the NAND particle and to solidify the adjusted supply voltage.

5. The flash voltage self-adapting regulation system of claim 4, wherein, The storage host is further used to send the voltage adjustment signal to control the power switching module to adjust the current supply voltage of the NAND particle if the identification number of the NAND particle cannot be read.

6. The flash voltage self-adapting regulation system of claim 4 or 5, wherein, The power switching module comprises a power conversion unit, a switching device, an inductor, a first resistor, a second resistor and a third resistor; One end of the power conversion unit is connected to one end of the inductor, the first resistor, the second resistor and the third resistor respectively, and the other end of the power conversion unit is connected to the supply voltage; The other end of the inductor is connected to one end of the first resistor, the other end of the first resistor is connected to one end of the second resistor, one end of the second resistor is also connected to one end of the third resistor, and the other end of the second resistor is grounded; The other end of the third resistor is used to be grounded through the switching device; The switching device is used to be connected to the storage host, and the storage host is used to send the voltage adjustment signal to control the switching device to be turned on to adjust the feedback voltage signal received by the power conversion unit; The power conversion unit is configured to output a working voltage supported by the NAND grain according to a state of the feedback voltage signal.

7. The flash voltage self-adapting regulation system of claim 4 or 5, wherein, The power supply switching module comprises two power supply voltage branches for providing a VCC voltage, and is configured to switch from a current power supply voltage branch to another power supply voltage branch for outputting a power supply voltage when the voltage adjustment signal is received.

8. A storage device, comprising: The storage device comprises a memory and at least one processor, the memory stores a computer program, and the processor is configured to execute the computer program to implement the flash memory voltage adaptive adjustment method in any one of claims 1-3.

9. A computer storage medium, characterized in that The storage device stores a computer program, and the computer program is executed to implement the flash memory voltage adaptive adjustment method in any one of claims 1-3.

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