Adjusting device

By setting a plurality of protruding structures in the peripheral area of ​​the adjustment device, the contact area of ​​the frame adhesive layer is increased, and the problem of insufficient adhesion of the frame adhesive layer is solved, and the reliability of the device and the waterproof gas penetration effect are improved.

CN115133272BActive Publication Date: 2025-07-04INNOLUX CORP
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Patent Information

Application Number
CN202110314313.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-03-24
Publication Date
2025-07-04
Estimated Expiration
2041-03-24

AI Technical Summary

Technical Problem

The existing antenna devices have not fully met the needs of consumers in all aspects, especially the lack of adhesion of the frame adhesive layer.

Method used

A plurality of first protruding structures are introduced in the adjustment device, arranged on the insulating layer in the peripheral region, and a frame adhesive layer is provided therebetween to increase the contact area with the frame adhesive layer to improve adhesion.

Benefits of technology

By increasing the design of the protruding structure, the adhesion of the frame adhesive layer is improved, the reliability of the adjustment device and the waterproof gas penetration effect are enhanced, and the yield of the device is improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present disclosure provides an adjustment device having an active region and a peripheral region adjacent to the active region. The adjustment device includes a first substrate, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, and a dam layer. The first insulating layer is disposed on the first conductive layer and includes a first opening disposed in the peripheral region. The second conductive layer is disposed on the first insulating layer and is electrically connected to the first conductive layer via the first opening. The second insulating layer includes a plurality of first protruding structures disposed in the peripheral region and on the first insulating layer. The dam layer is disposed in the peripheral region and on the second insulating layer. The first opening is disposed between two of the plurality of first protruding structures.
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Description

Technical Field

[0001] The present disclosure relates to an adjustment device, and more particularly to an electromagnetic wave adjustment device capable of improving the adhesion of a frame adhesive layer. Background Art

[0002] Display panels have been widely used in electronic products such as mobile phones, televisions, monitors, tablet computers, in-vehicle displays, wearable devices, and desktop computers. With the booming development of electronic products, the requirements for the quality or functions of electronic products are getting higher and higher, and such electronic products can usually be used as electronic modulation devices at the same time. For example, they can be used as antenna devices that can modulate electromagnetic waves. However, the existing antenna devices still do not fully meet the needs of consumers in all aspects. Summary of the Invention

[0003] The present disclosure provides an adjustment device that can improve the adhesion of a frame adhesive layer.

[0004] The present disclosure provides an adjustment device having an active area and a peripheral area adjacent to the active area. The adjustment device includes a first substrate, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, and a frame adhesive layer. The first insulating layer is disposed on the first conductive layer and includes a first opening disposed in the peripheral area. The second conductive layer is disposed on the first insulating layer and is electrically connected to the first conductive layer via the first opening. The second insulating layer includes a plurality of first protruding structures disposed in the peripheral area and on the first insulating layer. The frame adhesive layer is disposed in the peripheral area and on the second insulating layer. The first opening is disposed between two of the plurality of first protruding structures. Brief Description of the Drawings

[0005] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure.

[0006] Figure 1A A top view schematic diagram of an adjustment device according to an embodiment of the present disclosure;

[0007] Figure 1B is Figure 1A an enlarged schematic diagram of the area R in;

[0008] Figure 1C is Figure 1B a cross-sectional schematic diagram of the adjustment device along the section line I-I';

[0009] Figure 1D is Figure 1A a cross-sectional schematic diagram of the adjustment device along the section line II-II';

[0010] Figure 2Top view schematic diagram of the adjustment device according to another embodiment of the present disclosure;

[0011] Figure 3 Top view schematic diagram of the adjustment device according to another embodiment of the present disclosure;

[0012] Figure 4A Top view schematic diagram of the adjustment device according to another embodiment of the present disclosure;

[0013] Figure 4B is Figure 4A Cross-sectional schematic diagram of the adjustment device along the section line III-III';

[0014] Figure 5A Top view schematic diagram of the adjustment device according to another embodiment of the present disclosure;

[0015] Figure 5B is Figure 5A Cross-sectional schematic diagram of the adjustment device along the section line IV-IV';

[0016] Figure 6A Top view schematic diagram of the adjustment device according to another embodiment of the present disclosure;

[0017] Figure 6B is Figure 6A Cross-sectional schematic diagram of the adjustment device along the section line V-V'.

[0018] Explanation of reference numerals in the drawings

[0019] 100, 100a, 100b, 100c, 100d, 100e: Adjustment device;

[0020] 101: Active area;

[0021] 102: Peripheral area;

[0022] 103: Antenna unit;

[0023] 110: First substrate;

[0024] 110a, 120a, 160a: Boundary;

[0025] 120: First conductive layer;

[0026] 121, 122: Insulating layer;

[0027] 122a, 122b: Opening;

[0028] 123: Liquid crystal;

[0029] 130: First insulating layer;

[0030] 131, 131A: First opening;

[0031] 131B: Another first opening;

[0032] 132, 132A: Second opening;

[0033] 132B: Another second opening;

[0034] 133: Opening;

[0035] 134: Surface;

[0036] 140: Second conductive layer;

[0037] 141, 141A: First conductive part;

[0038] 141B: Another first conductive part;

[0039] 142, 142A: Second conductive part;

[0040] 142B: Another second conductive part;

[0041] 150, 150-1, 150-2, 150-3: First protruding structure;

[0042] 150A: Second insulating layer;

[0043] 151, 151a, 151b: Spacing;

[0044] 152: Side surface;

[0045] 153: Top surface;

[0046] 154, 154-1, 154-2, 155: Second protruding structure;

[0047] 155: Third protruding structure;

[0048] 155a, 155a1, 155a2: Third opening;

[0049] 155b: Top surface;

[0050] 156: Fourth opening;

[0051] 160: Frame adhesive layer;

[0052] 161, 161c: Conductive particles;

[0053] 170: Second substrate;

[0054] 180, 181, 183, 185: Conductive layer;

[0055] 182, 184, 186: Insulating layer

[0056] 182a, 184a, 184b: openings;

[0057] D1, D4: depths;

[0058] Da: diameter;

[0059] Dg: distance;

[0060] G1, G2: gaps;

[0061] H: height;

[0062] R, R1: regions;

[0063] S1, S2: sides;

[0064] X: first direction;

[0065] Y: third direction;

[0066] Z: second direction. Detailed implementation

[0067] This disclosure can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that for the convenience of the reader's understanding and for the simplicity of the drawings, only a part of the adjustment device is shown in the multiple drawings of this disclosure, and the specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of this disclosure. For example, the material of the film layer, the thickness of the film layer, the profile of the film layer, the structure of the transistor, the circuit layout, etc. are only exemplary, and the size or range is also only exemplary, and this disclosure is not limited thereto.

[0068] In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be construed as meaning "including but not limited to...".

[0069] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it can be directly on this other element or film layer or directly connected to this other element or layer, or there are intervening elements or film layers between them (non-direct case). Conversely, when an element is referred to as being "directly" "on" another element or film layer or "directly connected to" another element or film layer, there are no intervening elements or film layers between them.

[0070] Although terms such as "first", "second", "third",... may be used to describe various components, the components are not limited to these terms. These terms are only used to distinguish a single component in the specification from other components. The same terms may not be used in the claims, and the first, second, third,... may be replaced according to the order in which the components are claimed. Therefore, in the following specification, the first component may be the second component in the claims.

[0071] The expressions "ranging from a first value to a second value" and "ranging between a first value and a second value" indicate that the range includes the first value, the second value, and other values therebetween.

[0072] In some embodiments of the present disclosure, terms related to joining and connecting, such as "connect" and "interconnect", unless otherwise specifically defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, with other structures disposed therebetween. And these terms related to joining and connecting may also include the cases where both structures are movable, or both structures are fixed. In addition, the term "coupled" includes any means of direct and indirect electrical connection.

[0073] In the present disclosure, the length and width can be measured by using an optical microscope, and the thickness can be measured from a cross-sectional image in an electron microscope, but it is not limited thereto. In addition, there may be a certain error between any two values or directions used for comparison.

[0074] The adjustment device of the present disclosure may include an electromagnetic wave adjustment device, but it is not limited thereto. The adjustment device of the present disclosure may include an antenna device, but it is not limited thereto. The antenna device may be, for example, a liquid crystal antenna or an antenna splicing device, but it is not limited thereto. It should be noted that the adjustment device can be any of the foregoing permutations and combinations, but it is not limited thereto. In addition, the outer shape of the adjustment device can be rectangular, circular, polygonal, a shape with a curved edge, or other suitable shapes. The adjustment device may have peripheral systems such as a drive system, a control system, a light source system, and a rack system to support a display device, an antenna device, or a splicing device.

[0075] It should be noted that, without departing from the spirit of the present disclosure, the features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the inventive spirit or conflict with each other, they can be arbitrarily mixed and used.

[0076] Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0077] Figure 1AThe top view schematic diagram of the adjustment device according to an embodiment of the present disclosure. Figure 1B is Figure 1A the enlarged schematic diagram of the region R in Figure 1C is Figure 1B the cross-sectional schematic diagram of the adjustment device along the section line Ⅰ-Ⅰ’. Figure 1D is Figure 1A the cross-sectional schematic diagram of the adjustment device along the section line Ⅱ-Ⅱ’. For the sake of clarity and convenience of illustration in the drawings, Figure 1A and Figure 1C several elements in the adjustment device are omitted from showing. For example, Figure 1B the underfill layer 160 is omitted from showing, but not limited thereto. According to some embodiments, the adjustment device may be an electromagnetic wave adjustment device.

[0078] Please first refer to Figure 1A , the adjustment device 100 of this embodiment has an active region 101, a peripheral region 102, and an antenna unit 103. The peripheral region 102 is adjacent to the active region 101. The peripheral region 102 can surround the active region 101 on all sides. The antenna unit 103 is disposed in the active region 101.

[0079] Please also refer to Figures 1A to 1D , the adjustment device 100 of this embodiment includes a first substrate 110, a first conductive layer 120, a first insulating layer 130, a second conductive layer 140, a second insulating layer 150A, an underfill layer 160, and a second substrate 170. Among them, the first substrate 110 and the second substrate 170 are oppositely disposed on the upper and lower sides of the adjustment device 100. The first substrate 110 and the second substrate 170 may include a flexible substrate, a rigid substrate, or a combination thereof. For example, the materials of the first substrate 110 and the second substrate 170 may include polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), glass, other suitable substrate materials, or the combination of the foregoing, but not limited thereto.

[0080] Please refer to Figure 1B and Figure 1C, a first conductive layer 120 is disposed on a first substrate 110. A first insulating layer 130 is disposed on the first conductive layer 120 and includes a plurality of openings, such as a first opening 131, disposed in the peripheral region 102. A second conductive layer 140 is disposed on the first conductive layer 120. The second conductive layer 140 includes a first conductive portion 141, and the first conductive portion 141 is electrically connected to the first conductive layer 120 via the first opening 131. A second insulating layer 150A includes a plurality of first protruding structures 150, which are disposed in the peripheral region 102 and on the first insulating layer 130. In this embodiment, the plurality of first protruding structures 150 may continuously extend and surround the active region 101, but not limited thereto.

[0081] In some embodiments, the plurality of first protruding structures 150 may discontinuously extend and surround the active region 101, as Figure 3 shown. An encapsulant layer 160 is disposed in the peripheral region 102 and on the second insulating layer 150A. The first opening 131 is disposed between two of the plurality of first protruding structures 150.

[0082] Specifically, the first conductive layer 120 is disposed in the active region 101 and the peripheral region 102 on the first substrate 110, and the first conductive layer 120 is not disposed in the antenna unit 103. Among them, the first conductive layer 120 located in the peripheral region 102 may overlap the encapsulant layer 160 in the third direction (Y). In this embodiment, the boundary 160a of the encapsulant layer 160 is, for example, closer to the boundary 110a of the first substrate 110 than the boundary 120a of the first conductive layer 120, but not limited thereto. In some embodiments, although not shown in the figure, the boundary 120a of the first conductive layer may also be closer to the boundary 110a of the first substrate than the boundary 160a of the encapsulant layer, but not limited thereto. In addition, the first conductive layer 120 located in the peripheral region 102 may transmit signals from the second substrate 170 to the active region 101. The first conductive layer 120 in the active region 101 may be used to shield invisible light, such as electromagnetic waves, but not limited thereto. In this embodiment, the material of the first conductive layer 120 may be, for example, molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), silver (Ag), other suitable metals, or alloys or combinations of the above materials, but not limited thereto.

[0083] As Figure 1C shown, the first insulating layer 130 is disposed on the first conductive layer 120 and is disposed in the active region 101 and the peripheral region 102. As Figure 1A and Figure 1DAs shown, the first insulating layer 130 includes a plurality of openings 133 disposed in the active region 101 and corresponding to the antenna element 103.

[0084] The first insulating layer 130 includes a plurality of openings disposed in the peripheral region 102. For example, it may include a first opening 131 and a second opening 132. For example, the first protruding structure 150 may extend along the second direction Z. Along the first direction (X), at least one first opening 131 may be disposed between two first protruding structures 150-1 and 150-2, and at least one second opening 132 may be disposed between two first protruding structures 150-2 and 150-3. Along the first direction (X), the first protruding structure 150-2 may be disposed between the first opening 131 and the second opening 132. The first opening 131 and the second opening 132 may respectively expose portions of the first conductive layer 120. The second conductive layer 140 may include a first conductive portion 141 and a second conductive portion 142. The first conductive portion 141 may be electrically connected to the first conductive layer 120 via the first opening 131, and the second conductive portion 142 may be electrically connected to the first conductive layer 120 via the second opening 132. The first conductive portion 141 and the second conductive portion 142 may be separated from each other, but not limited thereto. In this embodiment, the first direction (X), the second direction (Z), and the third direction (Y) are different directions. Among them, the third direction (Y) is, for example, the normal direction of the first substrate 110, the first direction (X) is, for example, the extending direction of the section line I-I' and perpendicular to the third direction (Y), and the second direction (Z) is respectively perpendicular to the first direction (X) and the third direction (Y), but not limited thereto.

[0085] In some embodiments, the first opening 131 and the second opening 132 may be recessed from the surface 134 of the first insulating layer 130 toward the first substrate 110. The surface 134 of the first insulating layer 130 is the surface of the first insulating layer 130 away from the first substrate 110. The first opening 131 and the second opening 132 may have a depth D1. Wherein, the depth D1 is, for example, the maximum depth measured along the normal direction of the first substrate 110 for the first opening 131 and the second opening 132. In this embodiment, the first insulating layer 130 may be a single-layer structure or a multi-layer structure, and the material of the first insulating layer 130 may be, for example, an organic insulating material, an inorganic insulating material (such as silicon nitride), or a combination of the foregoing, but not limited thereto. The depth D1 may be between 0.05 micrometers (μm) and 2 micrometers, for example, between 0.05 micrometers and 1 micrometer, for example, between 0.08 micrometers and 0.5 micrometers.

[0086] As Figure 1CAs shown, in some embodiments, the second conductive layer 140 may be disposed within the peripheral region 102 and may not be disposed within the active region 101. In some embodiments, although not shown in the figure, the second conductive layer 140 may also be disposed within both the peripheral region 102 and the active region 101 simultaneously. In the present embodiment, the material of the second conductive layer 140 may be, for example, a transparent conductive material or a metal material. For example, the material of the second conductive layer 140 may be, for example, indium tin oxide, indium zinc oxide, indium oxide, zinc oxide, tin oxide, a metal material (such as aluminum, molybdenum, copper, silver, etc.), other suitable materials, or a combination of the foregoing, but not limited thereto.

[0087] The second insulating layer 150A may include a plurality of first protruding structures 150, and the plurality of first protruding structures 150 are disposed on the surface 134 of the first insulating layer 130 and within the peripheral region 102. In some embodiments, the plurality of first protruding structures 150 may not be disposed within the active region 101. In some embodiments, although not shown in the figure, the plurality of first protruding structures 150 may be disposed within both the active region 101 and the peripheral region 102 simultaneously. Each of the plurality of first protruding structures 150 is separated from each other, but not limited thereto. The plurality of first protruding structures 150 may be separated from each other by having a plurality of intervals 151, but not limited thereto. Among them, the plurality of intervals 151 are disposed between two adjacent first protruding structures 150 among the plurality of first protruding structures 150, and the plurality of intervals 151 are respectively disposed corresponding to the plurality of first openings 131 of the first insulating layer 130. Specifically, as Figure 1B and Figure 1C shown, the interval 151a is disposed corresponding to the first opening 131 of the first insulating layer 130, and the interval 151b is disposed corresponding to the second opening 132 of the first insulating layer 130.

[0088] As Figure 1C shown, in the present embodiment, the side surfaces 152 and the top surface 153 away from the first substrate 110 of the plurality of first protruding structures 150 may be covered by the damascene layer 160. According to some embodiments, the side surfaces 152 and the top surface 153 of the plurality of first protruding structures 150 may be in contact with the damascene layer 160. In addition, according to some embodiments, since the plurality of first protruding structures 150 may be three-dimensional structures protruding from the surface 134 of the first insulating layer 130 toward the second substrate 170, the contact area between the plurality of first protruding structures 150 and the damascene layer 160 can be increased, thereby improving the adhesion of the damascene layer 160. In addition, according to some embodiments, since the plurality of first protruding structures 150 are protruding three-dimensional structures and are disposed in the peripheral region 102, the plurality of first protruding structures 150 can also have the effect of blocking the infiltration of moisture, thereby improving the yield of the adjustment device 100.

[0089] In this embodiment, the material of the plurality of first protruding structures 150 may be, for example, an organic insulating material, an inorganic insulating material, or a combination of the foregoing, but is not limited thereto. The inorganic insulating material may be, for example, silicon nitride, silicon oxide, or a combination thereof. In this embodiment, the height H of at least one of the plurality of first protruding structures 150 may be, for example, between 0.1 micrometers (μm) and 3 micrometers, but is not limited thereto. According to some embodiments, the height H of all the plurality of first protruding structures 150 may be, for example, between 0.1 micrometers (μm) and 3 micrometers. When the height of the plurality of first protruding structures is less than 0.1 micrometer, the contact area between the plurality of first protruding structures and the frame adhesive layer is insufficient, so that the adhesion of the frame adhesive layer cannot be effectively improved. Wherein, the height H is, for example, the maximum height measured along the normal direction of the first substrate 110 of the plurality of first protruding structures 150. In addition, in this embodiment, the distance Dg of the gap G1 between the first substrate 110 and the second substrate 170 may be, for example, 2 micrometers to 10 micrometers, but is not limited thereto. In some embodiments, the distance Dg of the gap G1 may also be 3 micrometers. Therefore, when the distance Dg of the gap G1 between the first substrate 110 and the second substrate 170 is about 3 micrometers and the height of the plurality of first protruding structures is greater than 3 micrometers, it may cause the plurality of first protruding structures to abut against the second substrate, resulting in poor fluidity of the frame adhesive layer during fabrication. Wherein, the distance Dg is, for example, the distance measured along the normal direction of the first substrate 110 between the first substrate 110 and the second substrate 170.

[0090] The frame adhesive layer 160 may be disposed in the peripheral region 102 and on the second insulating layer 150A. The frame adhesive layer 160 may be disposed in the gap G1 between the first substrate 110 and the second substrate 170, so that the first substrate 110 can adhere to and be assembled with the second substrate 170 through the frame adhesive layer 160. In this embodiment, the frame adhesive layer 160 may surround the plurality of first protruding structures 150. In addition, the frame adhesive layer 160 may include conductive particles 161. As Figure 1C shown, the conductive particles 161 may be in contact with the second conductive layer 140 on the first substrate 110 and the conductive layer 185 on the second substrate 170. Thus, the second conductive layer 140 can transmit the signal from the second substrate 170 to the first conductive layer 120 and the active region 101. In this embodiment, the diameter Da of the conductive particles 161 may be, for example, 2 micrometers to 10 micrometers, but is not limited thereto. In some embodiments, the diameter Da of the conductive particles 161 may also be 3 micrometers. Wherein, the diameter Da is, for example, the maximum diameter measured along the normal direction of the first substrate 110 of the conductive particles 161.

[0091] As Figure 1C and Figure 1DAs shown, in this embodiment, the adjustment device 100 may further include an insulating layer 121, an insulating layer 122, a liquid crystal 123, a conductive layer 180, a conductive layer 181, an insulating layer 182, a conductive layer 183, an insulating layer 184, and a conductive layer 185. Specifically, the insulating layer 121 is disposed between the first conductive layer 120 and the first substrate 110, and is disposed within the active region 101 and the peripheral region 102. The insulating layer 122 is disposed on the first insulating layer 130 and within the opening 133 of the first insulating layer 130, and the insulating layer 122 is disposed within the active region 101. The insulating layer 122 has an opening 122a and an opening 122b, wherein the opening 122a exposes a part of the first insulating layer 130, and the opening 122b exposes a part of the insulating layer 121. The opening 122b may correspond to the antenna unit 103. The liquid crystal 123 is disposed within the active region 101, and is disposed within the gap G1 between the first substrate 110 and the second substrate 170, within the opening 122a, and within the opening 122b.

[0092] Next, a conductive layer 180 is disposed on the second substrate 170 and within the active region 101 and the peripheral region 102. An insulating layer 182 is disposed on the second substrate 170 and within the active region 101 and the peripheral region 102 to cover the conductive layer 180. The insulating layer 182 has an opening 182a to expose a portion of the conductive layer 180. A conductive layer 183 is disposed on the insulating layer 182 and within the active region 101 and the peripheral region 102. An insulating layer 184 is disposed within the active region 101 and the peripheral region 102. The insulating layer 184 within the peripheral region 102 is disposed on the insulating layer 182 to cover the conductive layer 183. The insulating layer 184 within the peripheral region 102 has an opening 184a and an opening 184b, wherein the opening 184a communicates with the opening 182a to expose a portion of the conductive layer 180, and the opening 184b exposes a portion of the conductive layer 183. A conductive layer 181 is disposed on the insulating layer 184 and within the active region 101. The insulating layer 186 within the active region 101 is disposed on the second substrate 170 to cover the conductive layer 181. A conductive layer 185 is disposed on the insulating layer 184, within the opening 184a, within the opening 182a, and within the opening 184b. The conductive layer 185 may be disposed within the peripheral region 102 and the active region 101. According to some embodiments, the conductive layer 185 may be disposed within the peripheral region 102 and may not be disposed within the active region 101. The conductive layer 185 may be electrically connected to the conductive layer 180 via the opening 184a, and the conductive layer 185 may also be electrically connected to the conductive layer 183 via the opening 184b. The conductive layer 185 may also contact the conductive particles 161 in the frame adhesive layer 160. Therefore, signals from the conductive layer 180 in the second substrate 170 can be transmitted to the first conductive layer 120 in the first substrate 110 through the conductive layer 185, the conductive particles 161, and the second conductive layer 140, and signals from the conductive layer 183 in the second substrate 170 can also be transmitted to the first conductive layer 120 in the first substrate 110 through the conductive layer 185, the conductive particles 161, and the second conductive layer 140.

[0093] Although the first protruding structure 150 in this embodiment is located in the peripheral region 102 and disposed on the first substrate 110, the present disclosure does not limit the position where the first protruding structure is disposed. That is to say, in some embodiments, the first protruding structure may also be disposed on the second substrate. In some embodiments, the first protruding structure may also be disposed on both the first substrate and the second substrate simultaneously.

[0094] Such as Figure 1A and Figure 1BAs shown, the first substrate 110 includes side edges S1 and S2, and side edge S1 is connected to side edge S2. Side edge S1 extends along the first direction (X), and side edge S2 extends along the second direction (Z). Taking the region R as an example for illustration, the region R is adjacent to the side edge S2 of the first substrate 110, and the extending direction of the first protruding structure 150 within the region R may be the second direction (Z), that is, it may be the same as the extending direction of side edge S2. The region R1 is adjacent to the side edge S1 of the first substrate 110, and the extending direction of the first protruding structure 150 within the region R1 may be the first direction (X), that is, it may be the same as the extending direction of side edge S1.

[0095] The above embodiments are described by taking Figure 1A the region R therein as an example. Therefore, the first protruding structure 150 extends along the second direction (Z). Along the first direction (X), at least one first opening 131 may be disposed between two first protruding structures 150-1 and 150-2. Although not shown in the figure, for the region R1, the first protruding structure 150 may extend along the first direction (X). Along the second direction (Z), at least one first opening 131 may be disposed between two first protruding structures 150.

[0096] Other embodiments will be listed below for illustration. It must be noted here that the following embodiments follow the component numbers and partial contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0097] Figure 2 is a top view schematic diagram of an adjustment device according to another embodiment of the present disclosure. Please refer to Figure 1B and Figure 2 simultaneously. The adjustment device 100a of this embodiment is substantially similar to Figure 1BThe adjustment device 100, so the same and similar components in the two embodiments will not be repeated here. The difference between the adjustment device 100a of this embodiment and the adjustment device 100 mainly lies in the design of the second conductive layer 140 and the first opening 131. In the adjustment device 100a of this embodiment, the first insulating layer 130 includes a first opening 131A and another first opening 131B provided in the peripheral area 102, and the other first opening 131B is correspondingly arranged along the second direction (Z) with the first opening 131A. The first protruding structure 150 can extend along the second direction (Z). The first opening 131A is arranged along the first direction (X) between two first protruding structures 150-1 and 150-2. The second conductive layer 140 includes a first conductive portion 141A and another first conductive portion 141B. The first conductive portion 141A is electrically connected to the first conductive layer 120 through the first opening 131A, and the other first conductive portion 141B is electrically connected to the first conductive layer 120 through the other first opening 131B. The first conductive portion 141A and the other first conductive portion 141B are connected to each other. Specifically, the first conductive portion 141A and the other first conductive portion 141B are connected to each other along the second direction (Z). In addition, the first insulating layer 130 may further include a second opening 132A and another second opening 132B provided in the peripheral area 102, and the other second opening 132B is correspondingly arranged along the second direction (Z) with the second opening 132A. The second conductive layer 140 may further include a second conductive portion 142A and another second conductive portion 142B. The second conductive portion 142A is electrically connected to the first conductive layer 120 through the second opening 132A, and the other second conductive portion 142B is electrically connected to the first conductive layer 120 through the other second opening 132B. The second conductive portion 142A and the other second conductive portion 142B are connected to each other. Specifically, the second conductive portion 142A and the other second conductive portion 142B are connected to each other along the second direction (Z).

[0098] Figure 3 The top view schematic diagram of the electromagnetic wave adjustment device according to another embodiment of the present disclosure. Please refer to Figure 1B and Figure 3 similarly, the electromagnetic wave adjustment device 100b of this embodiment is substantially similar to Figure 1BThe electromagnetic wave adjustment device 100, so the same and similar components in the two embodiments will not be repeated here. The difference between the electromagnetic wave adjustment device 100b of this embodiment and the electromagnetic wave adjustment device 100 is mainly that in the electromagnetic wave adjustment device 100b of this embodiment, the second insulating layer 150A further includes a plurality of second protruding structures 154, which are arranged in the peripheral area 102 and are separated from the plurality of first protruding structures 150. The first opening 131 is arranged between two first protruding structures 150 along the first direction (X), and is arranged between two second protruding structures 154 among the plurality of second protruding structures 154 along the second direction (Z). Specifically, the first opening 131 is arranged between the first protruding structures 150-1 and 150-2 along the first direction (X), and is arranged between two second protruding structures 154-1 and 154-2 along the second direction (Z).

[0099] In this embodiment, the first protruding structure 150-1 (or the first protruding structure 150-2, or the first protruding structure 150-3) is arranged and extends in a discontinuous manner, so that there is still a gap G2 between two adjacent first protruding structures 150-1 (or the first protruding structure 150-2, or the first protruding structure 150-3). Thereby, the frame adhesive layer 160 can flow more easily during production due to the setting of the gap G2. Specifically, the first protruding structure 150 extending in the second direction (Z) has a gap G2 set. Taking the first protruding structure 150-1 as an example, there is a gap G2 between two adjacent first protruding structures 150-1 extending in the second direction (Z).

[0100] In this embodiment, the materials of the plurality of second protruding structures 154 are the same as or similar to those of the plurality of first protruding structures 150b, so they will not be elaborated here. In addition, since the plurality of second protruding structures 154 can also be three-dimensional structures protruding from the surface of the first insulating layer 130 towards the second substrate (not shown), the contact area between the plurality of second protruding structures 154 and the frame adhesive layer (not shown) can be increased, and thus the adhesion of the frame adhesive layer can be further improved.

[0101] Figure 4A A top view schematic diagram of the adjustment device according to another embodiment of the present disclosure. Figure 4B is Figure 4A A cross-sectional schematic diagram of the adjustment device along the section line III-III'. Please refer to Figures 1B - 1C and Figures 4A - 4B simultaneously. The adjustment device 100c of this embodiment is substantially similar to Figures 1B - 1CAdjusting device 100. Therefore, the same and similar components in the two embodiments will not be repeated here. The main difference between the adjusting device 100c of this embodiment and the adjusting device 100 is that the adjusting device 100c of this embodiment further includes a plurality of third protruding structures 155 and a plurality of third openings 155a. In the first direction (X), the third protruding structures 155 can be disposed between the two first protruding structures 150.

[0102] As Figure 4A and Figure 4B shown, the second insulating layer 150A further includes a plurality of third protruding structures 155 disposed in the peripheral region 102. Among them, the plurality of third protruding structures 155 can continuously extend and surround the active region 101, but not limited thereto. Part of the first conductive portion 141 can be disposed on at least one of the plurality of third protruding structures 155. At least one of the plurality of third protruding structures 155 includes a third opening 155a. As Figure 4B shown, the third opening 155a can be connected to the first opening 131 of the first insulating layer 130. Another part of the first conductive portion 141 can be disposed on the sidewall of the third opening 155a. Although not shown in the figure, the plurality of third protruding structures 155 can also be disposed and extended in a discontinuous manner. For example, a gap (such as the gap G2 shown in Figure 3 ) can be provided in the third protruding structure 155 extending in the second direction (Z). Thereby, the frame adhesive layer 160 can flow more easily during production due to the setting of the gap.

[0103] A plurality of fourth openings 156 can be disposed between the adjacent plurality of first protruding structures 150 and the plurality of third protruding structures 155. The plurality of fourth openings 156 expose a part of the first insulating layer 130 and have a depth D4. Among them, the depth D4 is, for example, the maximum depth measured along the normal direction of the first substrate 110 for the fourth opening 156. In some embodiments, the value of the depth D4 of the fourth opening 156 is, for example, equal to the value of the height H of the plurality of first protruding structures 150, but not limited thereto.

[0104] In this embodiment, the plurality of third protruding structures 155 include a plurality of third openings 155a. In this embodiment, a plurality of first conductive portions 141 (or a plurality of second conductive portions 142) of the second conductive layer 140 can be disposed on the top surface 155b of the plurality of third protruding structures 155 away from the first substrate 110, in the plurality of third openings 155a, and in the plurality of first openings 131. As Figure 4BAs shown, the third opening 155a of the third protruding structure 155 can be connected to the first opening 131 of the first insulating layer 130. In this way, the first conductive portion 141 can be electrically connected to the first conductive layer 120 via the third opening 155a and the first opening 131. In this embodiment, since the second conductive layer 140 can be disposed on the top surfaces 155b of the plurality of third protruding structures 155, the distance between the conductive layer 185 on the second substrate 170 and the second conductive layer 140 on the first substrate 110 can be reduced, and thus conductive particles 161c with a smaller diameter Da can be used. In this way, the cost of the conductive particles 161c can be reduced, or the design of the size of the gap G1 can be made more flexible.

[0105] In this embodiment, since the plurality of third protruding structures 155 can also be three-dimensional structures protruding from the surface 134 of the first insulating layer 130 toward the second substrate 170, the contact area between the plurality of third protruding structures 155 and the encapsulant layer 160 can be increased, and thus the adhesion of the encapsulant layer 160 can be further improved.

[0106] According to some embodiments, the second insulating layer 150A may include a plurality of protruding structures. For example, the second insulating layer 150A may include a plurality of first protruding structures 150. For example, the second insulating layer 150A may include a plurality of first protruding structures 150 and a plurality of second protruding structures 154. For example, the second insulating layer 150A may include a plurality of first protruding structures 150 and a plurality of third protruding structures 155. For example, the second insulating layer 150A may include a plurality of first protruding structures 150, a plurality of second protruding structures 154, and a plurality of third protruding structures 155. Refer to Figure 3 , the extending direction of the first protruding structure 150 is the second direction (Z), and at least one first opening 131 is disposed between two first protruding structures 150-1 and 150-2 along the first direction (X). The first opening 131 is also disposed between two second protruding structures 154-1 and 154-2 along the second direction (Z). Above the first protruding structure 150 and the second protruding structure 154, the second conductive layer 140 is not disposed. According to some embodiments, the protruding structure with the second conductive layer 140 disposed above it can be defined as the third protruding structure 155. For example, refer to Figure 4B , a part of the second conductive layer 140 is disposed on the third protruding structure 155. Specifically, the first conductive portion 141 of the second conductive layer 140 is disposed on the third protruding structure 155. Moreover, the third protruding structure 155 may have a third opening 155a, and the third opening 155a can be connected to the first opening 131 of the first insulating layer 130.

[0107] Figure 5A The top view schematic diagram of the adjusting device according to another embodiment of the present disclosure. Figure 5B isFigure 5A Schematic cross-sectional view of the adjusting device along section line Ⅳ-Ⅳ'. Please also refer to Figures 4A - 4B and Figures 5A - 5B , the adjusting device 100d of this embodiment is substantially similar to Figures 4A - 4B the adjusting device 100c, so the same and similar components in the two embodiments will not be repeated here. The difference between the adjusting device 100d of this embodiment and the adjusting device 100c mainly lies in the design of the third opening 155a in the third protruding structure 155. In this embodiment, along the first direction (X), the third protruding structure 155 is disposed between the two first protruding structures 150. The third protruding structure 155 includes at least two third openings 155a1 and 155a2 along the first direction (X). The first insulating layer 130 includes a first opening 131A and another first opening 131B disposed in the peripheral area 102, and the second conductive layer 140 includes a first conductive portion 141A and another first conductive portion 141B. The first conductive portion 141A and the other first conductive portion 141B are electrically connected to the first conductive layer 120 via the two third openings 155a1 and 155a2 respectively. Along the first direction (X), the first conductive portion 141 and the other conductive portion 142 are not connected.

[0108] Figure 6A Top view schematic of the adjusting device according to another embodiment of the present disclosure. Figure 6B is Figure 6A Schematic cross-sectional view of the adjusting device along section line Ⅴ-Ⅴ'. Please also refer to Figures 5A - 5B and Figures 6A - 6B , the adjusting device 100e of this embodiment is substantially similar to Figures 5A - 5B the adjusting device 100d, so the same and similar components in the two embodiments will not be repeated here. The difference between the adjusting device 100e of this embodiment and the adjusting device 100d mainly lies in the design of the third opening 155a in the third protruding structure 155. Along the first direction (X), the third protruding structure 155 includes third openings 155a1 and 155a2. The first insulating layer 130 includes a first opening 131A and another first opening 131B disposed in the peripheral area 102, and the second conductive layer 140 includes a first conductive portion 141A and another first conductive portion 141B. Along the first direction (X), the first conductive portion 141A and the other first conductive portion 141B are connected to each other. Moreover, the connected first conductive portion 141A and the other first conductive portion 141B are filled into the third openings 155a1 and 155a2 of the third protruding structure 155. Thus, the connected first conductive portion 141A and the other first conductive portion 141B are electrically connected to the first conductive layer 120 via the third openings 155a1 and 155a2, the first opening 131A and the other first opening 131B.

[0109] In summary, in the adjustment device of the present disclosure embodiment, by disposing a plurality of first protruding structures in the peripheral area, the contact area between the plurality of first protruding structures and the frame adhesive layer can be increased, and the adhesion of the frame adhesive layer can be improved. In addition, since the plurality of first protruding structures are protruding three-dimensional structures and are disposed in the peripheral area, the plurality of first protruding structures can also have the effect of blocking moisture from infiltrating, thereby improving the yield of the adjustment device.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, and are not intended to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An adjustment device, characterized in that, It has an active region and a peripheral region, the peripheral region being adjacent to the active region, and the adjusting device includes: A first substrate; A first conductive layer disposed on the first substrate; A first insulating layer disposed on the first conductive layer and including a first opening disposed in the peripheral region; A second conductive layer disposed on the first conductive layer, the second conductive layer including a first conductive portion, the first conductive portion being electrically connected to the first conductive layer through the first opening; A second insulating layer including a plurality of first protruding structures, disposed in the peripheral region and on the first insulating layer; and An encapsulant layer disposed in the peripheral region and on the second insulating layer, wherein the first opening is disposed between two of the plurality of first protruding structures; wherein the second insulating layer further includes a plurality of second protruding structures, disposed in the peripheral region and separated from the plurality of first protruding structures; wherein the first opening is disposed between two of the plurality of first protruding structures along a first direction and between two of the plurality of second protruding structures along a second direction.

2. The adjustment device according to claim 1, characterized in that, The height of at least one of the plurality of first protruding structures is from 0.1 micrometer to 3 micrometers.

3. The adjustment device according to claim 1, characterized in that The first insulating layer further includes a second opening disposed in the peripheral region, the second conductive layer further includes a second conductive portion, the second conductive portion being electrically connected to the first conductive layer through the second opening, and the first conductive portion and the second conductive portion are separated from each other.

4. The adjustment device according to claim 1, characterized in that, The first insulating layer further includes another first opening disposed in the peripheral region, the second conductive layer includes another first conductive portion, the another first conductive portion is electrically connected to the first conductive layer through the another first opening, and the first conductive portion and the another first conductive portion are connected to each other.

5. The adjustment device according to claim 4, characterized in that The first opening is disposed between two of the plurality of first protruding structures along a first direction, the two first protruding structures extend along a second direction, and the first conductive portion and the another first conductive portion are connected to each other along the second direction.

6. The adjustment device according to claim 4, characterized in that The first opening is disposed between two of the plurality of first protruding structures along a first direction, the two first protruding structures extend along a second direction, and the first conductive portion and the another first conductive portion are connected to each other along the first direction.

7. The adjustment device according to claim 1, characterized in that, The second insulating layer further includes a plurality of third protruding structures, disposed in the peripheral region, and a part of the first conductive portion is disposed on at least one of the plurality of third protruding structures.

8. The adjustment device according to claim 7, wherein At least one of the plurality of third protruding structures includes a third opening, and the third opening connects the first opening of the first insulating layer.

9. The adjustment device according to claim 8, characterized in that, Another part of the first conductive portion is disposed on the sidewall of the third opening.

Citation Information

Patent Citations

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    CN104603685A