Wafer carrier, semiconductor process equipment and control method thereof

Abstract

The present application discloses a wafer carrier, a semiconductor process equipment and a control method thereof. The disclosed wafer carrier comprises a base, a plurality of groups of carrier rods and a plurality of driving mechanisms, each group of carrier rods comprises a plurality of carrier rods distributed at intervals, the surface of the base comprises a plurality of sub-regions, the plurality of sub-regions correspond to the plurality of groups of carrier rods one by one, the sub-regions are provided with a plurality of through holes, a plurality of carrier rods in a group of carrier rods corresponding to the sub-regions are arranged in a plurality of through holes one by one, and are slidably matched with the through holes, each driving mechanism corresponds to a group of carrier rods, the driving mechanism is connected to a corresponding group of carrier rods, and the driving mechanism is used to drive a corresponding group of carrier rods to move along the through holes to adjust the height of the corresponding carrier rods extending out of the through holes. The above scheme can solve the problem that the uniformity of the plasma etching process is adversely affected by the occurrence of a local area with uneven temperature in the wafer carrier.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor process equipment design, and specifically relates to a wafer carrier, semiconductor process equipment and a control method thereof. Background Art

[0002] The plasma etching process is a common process in wafer processing. During the process, the wafer to be processed needs to be heated to a certain temperature to meet the process conditions. The plasma etching process is sensitive to temperature. Uneven wafer temperature will cause uneven wafer etching. Therefore, during the process, the temperature of the wafer surface needs to be precisely controlled (temperature uniformity is less than <1°C). In the related art, bumps are set on the surface of the wafer carrier, and the bumps are used to support part of the wafer to be processed, and the temperature of the wafer to be processed is adjusted by passing a temperature-adjusting gas between the back of the wafer to be processed and the bumps, so that the temperature of the surface of the wafer to be processed is more uniform. However, after the temperature-adjusting gas is passed, there will still be local areas with uneven temperatures on the wafer carrier, which makes the temperature of the surface of the wafer to be processed uneven, resulting in an adverse effect on the uniformity of the plasma etching process. Summary of the invention

[0003] The purpose of the embodiments of the present application is to disclose a wafer carrier, semiconductor process equipment and a control method thereof, which can solve the problem in the background technology that the wafer carrier has a local area of ​​uneven temperature and has an adverse effect on the uniformity of the plasma etching process.

[0004] In order to solve the above technical problems, this application is implemented as follows:

[0005] In the first aspect, an embodiment of the present application discloses a wafer carrying device, which includes a base, multiple groups of carrying rods and multiple driving mechanisms, each group of the carrying rods includes multiple carrying rods distributed at intervals, the surface of the base includes multiple sub-areas, the multiple sub-areas correspond one-to-one to the multiple groups of carrying rods, the sub-areas are provided with multiple through holes, the multiple carrying rods in a group of the carrying rods corresponding to the sub-areas are arranged one-to-one in the multiple through holes and slidably cooperate with the through holes, each of the driving mechanisms corresponds to a group of the carrying rods, the driving mechanism is connected to the corresponding group of the carrying rods, and the driving mechanism is used to drive the corresponding group of the carrying rods to move along the through holes to adjust the height of the corresponding carrying rod extending out of the through holes.

[0006] In a second aspect, an embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the wafer carrier device described above.

[0007] In a third aspect, an embodiment of the present application discloses a control method for semiconductor process equipment, wherein the disclosed semiconductor process equipment is the semiconductor process equipment described above, and the control method for the disclosed semiconductor process equipment includes debugging the wafer carrier before the process;

[0008] In the process, the carrying rod in at least one of the sub-areas is adjusted according to the corresponding matching relationship between the etching rate and the height of the carrying rod, so that the etching rate difference of the wafer area corresponding to the multiple sub-areas is within the preset rate difference.

[0009] The technical solution adopted in this application can achieve the following beneficial effects:

[0010] The wafer carrier device disclosed in the embodiment of the present application improves the structure of the wafer carrier device in the related art by dividing the surface of the base into multiple sub-areas, and setting multiple driving mechanisms, multiple sub-areas and multiple groups of carrier rods in one-to-one correspondence, so that the height of the carrier rods of different sub-areas extending out of the through-hole can be adjusted by different driving mechanisms, so that the fluidity of the corresponding temperature-adjusting gas in different sub-areas can be adjusted to adjust the temperature of the sub-areas. Therefore, the present application can solve the problem that the uniformity of the plasma etching process is adversely affected by the occurrence of local areas with uneven temperatures in the wafer carrier device. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0012] Figure 2 It is a partial structural schematic diagram of a wafer carrying device disclosed in an embodiment of the present application;

[0013] Figure 3 It is a structural schematic diagram of a base of a wafer carrying device disclosed in an embodiment of the present application;

[0014] Figures 4 to 6 It is a flow chart of a control method of semiconductor process equipment disclosed in an embodiment of the present application.

[0015] Description of reference numerals:

[0016] 100 - base, 110 - annular region, 111 - sub-region, 112 - through hole, 113 - temperature adjustment groove, 120 - circular central region;

[0017] 200-bearing rod, 210-bearing portion, 220-tip portion;

[0018] 300-driving mechanism, 310-lifting driving member, 320-lifting plate;

[0019] 400-Distance detection equipment;

[0020] 500-Wafer to be processed. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0022] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0023] The wafer carrier device disclosed in the embodiment of the present application is described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0024] like Figures 1 to 3 As shown, an embodiment of the present application discloses a wafer carrying device, and the disclosed wafer carrying device includes a base 100 , a plurality of groups of carrying rods 200 and a plurality of driving mechanisms 300 .

[0025] The base 100 is the basic component of the wafer carrying device, and the upper surface of the base 100 can be placed on the wafer 500 to be processed. The wafer carrying device can also include a pin mechanism, which can be lifted and lowered, and can support the wafer 500 to be processed and the processed wafer during the lifting and lowering process. Specifically, when the wafer has not been processed, the wafer is a wafer 500 to be processed. At this time, the pin mechanism can be raised to the position where the wafer 500 to be processed is loaded, so that the manipulator can place the wafer 500 to be processed on the pin mechanism, so that the pin mechanism can place the wafer 500 to be processed on the base 100 by lowering its own height. After the wafer is processed, the wafer 500 to be processed becomes a processed wafer. At this time, in order to facilitate the manipulator to grasp the processed wafer, the pin mechanism can be driven to rise to a position where it is convenient for the manipulator to grasp. That is to say, in the wafer carrying device disclosed in the embodiment of the present application, the base 100 and the pin mechanism can be used to realize the loading and unloading of the wafer.

[0026] In order to adjust the temperature of the wafer 500 to be processed, a certain temperature regulating space (such as the temperature regulating groove 113 described later) is provided between the upper surface of the wafer supporting device and the lower surface of the wafer 500 to be processed, through which a temperature regulating gas can be introduced. Part of the supporting rod 200 is movably arranged in the temperature regulating space, so that the supporting rod 200 can play a supporting role for the wafer 500 to be processed after extending to a certain height from the through hole 112. The temperature regulating gas that can be introduced into the temperature regulating space can be helium. Of course, the temperature regulating gas can also be other types of heat-conducting gases. The present application does not impose specific restrictions on the type of temperature regulating gas.

[0027] Each group of supporting rods 200 includes multiple supporting rods 200 distributed at intervals, so that the multiple supporting rods 200 of the multiple groups of supporting rods 200 can play a supporting role on the wafer 500 to be processed during the process, so as to improve the stability of the wafer 500 to be processed during the process. The surface of the base 100 includes multiple sub-areas 111, and the multiple sub-areas 111 correspond to the multiple groups of supporting rods 200 one by one. The sub-areas 111 are provided with multiple through holes 112. The multiple supporting rods 200 in a group of supporting rods 200 corresponding to the sub-areas 111 are arranged in the multiple through holes 112 one by one, and slidably cooperate with the through holes 112. Each driving mechanism 300 corresponds to a group of supporting rods 200, and the driving mechanism 300 is connected to the corresponding group of supporting rods 200. The driving mechanism 300 is used to drive the corresponding group of supporting rods 200 to move along the through holes 112 to adjust the height of the corresponding supporting rods 200 extending out of the through holes 112.

[0028] In the present application, the driving mechanism 300 can adjust the distance between the supporting rod 200 and the back side of the wafer 500 to be processed by adjusting the height of the supporting rod 200 extending out of the through hole 112. The maximum height of the supporting rod 200 extending out of the through hole 112 is the height when the supporting rod 200 contacts the back side of the wafer 500 to be processed, so that the supporting rod 200 can play a supporting role on the wafer 500 to be processed during the process.

[0029] Parts of multiple bearing rods 200 in the multiple groups of bearing rods 200 can be movably arranged in the temperature adjustment space, and there is temperature-adjusting gas between the multiple bearing rods 200. When a sub-region 111 with uneven temperature appears in the wafer bearing device, the height of the bearing rods 200 in the sub-region 111 extending out of the through hole 112 can be adjusted. For example, when the temperature of a certain sub-region 111 is high, the driving mechanism 300 can be used to reduce the height of the bearing rods 200 in the sub-region 111 extending out of the through hole 112, thereby increasing the distance between the bearing rods 200 and the back side of the wafer 500 to be processed, which is conducive to improving the fluidity of the temperature-adjusting gas in the sub-region 111, so as to reduce the temperature of the sub-region 111. On the contrary, the driving mechanism 300 is used to increase the height of the supporting rod 200 in the sub-area 111 extending outside the through hole 112, thereby reducing the distance between the supporting rod 200 and the back side of the wafer 500 to be processed, which is beneficial to reduce the fluidity of the temperature-regulating gas in the sub-area 111, so as to gradually increase the temperature of the sub-area 111.

[0030] In other words, the present application can adjust the distance between the carrying rod 200 and the back of the wafer 500 to be processed by adjusting the height of the carrying rod 200 extending out of the through hole 112 in different sub-areas 111, thereby adjusting the fluidity of the temperature-adjusting gas in the sub-area 111, thereby adjusting the temperature of the sub-area 111, and further adjusting the temperature of the surface of the wafer 500 to be processed in the sub-area 111. In addition, through the one-to-one correspondence between multiple driving mechanisms 300, multiple sub-areas 111 and multiple groups of carrying rods 200, the wafer carrying device can adjust the height of the carrying rods 200 in multiple sub-areas 111 respectively through multiple driving mechanisms 300, thereby enabling the wafer carrying device in the present application to adjust the temperature of different sub-areas 111.

[0031] The wafer carrier device disclosed in the embodiment of the present application improves the structure of the wafer carrier device in the related art, divides the surface of the base 100 into multiple sub-areas 111, and sets multiple driving mechanisms 300, multiple sub-areas 111 and multiple groups of carrier rods 200 to cooperate one by one, so that the height of the carrier rods 200 extending out of the through holes 112 of different sub-areas 111 can be adjusted through different driving mechanisms 300, so that the fluidity of the corresponding temperature-adjusting gas in different sub-areas 111 can be adjusted to adjust the temperature of the sub-areas 111. Therefore, the present application can solve the problem that the uniformity of the plasma etching process is adversely affected by the occurrence of uneven temperature in the local area of ​​the wafer carrier device.

[0032] In the wafer carrier device disclosed in the embodiment of the present application, the surface of the base 100 may include a circular central area 120 and an annular area 110, the annular area 110 surrounds the circular central area 120, the annular area 110 includes a plurality of sub-areas 111 distributed along the circumferential direction of the annular area 110, and the circular central area 120 includes a plurality of sub-areas 111 distributed along the circumferential direction of the circular central area 120. In this case, the plurality of sub-areas 111 are divided into the circular central area 120 and the plurality of annular areas 110, so that the adjustment of the temperature of different sub-areas 111 can be divided into the adjustment of different annular areas 110 or circular central area 120, so that the range of temperature adjustment of different sub-areas 111 is clearer.

[0033] In the wafer carrier device disclosed in the embodiment of the present application, there can be multiple annular areas 110, which are nested in sequence. All the annular areas 110 are arranged concentrically with the circular center area 120. The wafer carrier device includes multiple heaters, and a heater is provided inside the circular center area 120 and each annular area 110.

[0034] In the above case, the multiple annular areas 110 can be understood as annular areas of different diameters arranged in sequence with the center of the circular central area 120 as the center, that is, the circular central area 120 and the multiple annular areas 110 are arranged in sequence in the radial direction of the wafer carrier, and the circular central area 120 is arranged corresponding to a heater and each heater is only arranged corresponding to one annular area 110, which is conducive to the radial temperature regulation of the wafer carrier, thereby alleviating the problem of temperature imbalance in the radial direction of the wafer carrier. At the same time, the entire wafer carrier is divided into a plurality of concentrically arranged annular areas 110 and a circular central area 120, and the circular central area 120 and each annular area 110 are divided into a plurality of sub-areas 111 in the circumferential direction, which is conducive to more precise temperature regulation of the wafer carrier, thereby solving the problem of temperature imbalance in the circumferential direction in the same radial area, thereby achieving a stronger local temperature regulation function.

[0035] In a further technical solution, in two adjacent annular regions 110, the number of sub-regions 111 included in the annular region 110 with a larger diameter may be greater than the number of sub-regions 111 included in the annular region 110 with a smaller diameter, and the number of sub-regions 111 included in the annular region 110 adjacent to the circular center region 120 may be greater than or equal to the number of sub-regions 111 included in the circular center region 120. In this case, compared with the annular region 110 with a smaller diameter, the annular region 110 with a larger diameter has a longer circumference, and when the width of the annular region 110 is the same, the area of ​​the annular region 110 with a larger diameter is also larger, and dividing more sub-regions 111 in the annular region 110 with a larger area or a longer circumference can further finely realize the control and regulation of the local temperature of the wafer carrier. Similarly, the annular area 110 adjacent to the circular center area 120 has a longer circumference than the circular center area 120, so that an equal or even greater number of sub-areas 111 are divided in the annular area 110 with a longer circumference, which can also further refine the control and regulation of the local temperature of the wafer carrier.

[0036] Of course, in two adjacent annular areas 110, the number of sub-areas 111 contained in the annular area 110 with a larger diameter may be less than or equal to the number of sub-areas 111 contained in the annular area 110 with a smaller diameter. Similarly, the number of sub-areas 111 contained in the annular area 110 adjacent to the circular center area 120 may be less than the number of sub-areas 111 contained in the circular center area 120. The specific relationship between the numbers of sub-areas 111 contained in the two adjacent annular areas 110 and the specific relationship between the numbers of sub-areas 111 contained in the circular center area 120 and the annular area 110 adjacent to the circular center area 120 can be designed according to actual use needs. The present application does not limit the specific relationship between the two adjacent annular areas 110 and the numbers of sub-areas 111 contained in the circular center area 120 and the annular area 110 adjacent to the circular center area 120.

[0037] In order to improve the convenience of configuring the drive mechanism 300 in the wafer carrier, in an optional technical solution, in the same annular area 110, the arc angles corresponding to the multiple sub-areas 111 can be equal, and the arc angles corresponding to the multiple sub-areas 111 in the circular center area 120 can be equal. In this case, the circular center area 120 and the same annular area 110 are divided into multiple sub-areas 111, so that the shapes and sizes of the multiple sub-areas 111 in the same annular area 110 are equal, so that the multiple sub-areas 111 in the same annular area 110 can be configured with the same specification of the drive mechanism 300, that is, it is convenient to configure the drive mechanism 300 for the multiple sub-areas 111 in the same annular area 110. At the same time, the shapes and sizes of the multiple sub-areas 111 in the circular center area 120 are equal, so that the multiple sub-areas 111 in the circular center area 120 can be configured with the same specification of the drive mechanism 300, which is conducive to improving the convenience of configuring the drive mechanism 300 for the multiple sub-areas 111 in the circular center area 120.

[0038] Of course, the wafer carrier device disclosed in the embodiment of the present application can also be divided into multiple sub-areas 111 in other ways, not limited to the division method described above.

[0039] In the wafer carrying device disclosed in the embodiment of the present application, the carrying rod 200 may include a carrying portion 210 and a tip portion 220 connected to the carrying portion 210, the first end of the carrying portion 210 is connected to the driving mechanism 300, the second end of the carrying portion 210 is connected to the tip portion 220, the tip portion 220 is coaxially arranged with the carrying portion 210, and the diameter of the tip portion 220 is smaller than the diameter of the carrying portion 210, and at least a portion of the tip portion 220 can extend out of the through hole 112 through the through hole 112.

[0040] In the above case, the bearing portion 210 of the bearing rod 200 is connected to the driving mechanism 300, and the tip portion 220 of the bearing rod 200 is adjacent to the upper surface of the wafer bearing device. During the process, the wafer 500 to be processed is carried on the upper surface of the wafer bearing device, so that the tip portion 220 is closer to the wafer 500 to be processed. When the temperature of the wafer 500 to be processed is relatively stable, the driving mechanism 300 can drive the tip portion 220 to the maximum height extending out of the through hole 112, that is, the end of the tip portion 220 close to the wafer 500 to be processed can contact the back of the wafer 500 to be processed, and is used to carry the wafer 500 to be processed. At this time, since the diameter of the tip portion 220 is smaller than the diameter of the bearing portion 210, the tip portion 220 that plays a bearing role can reduce the adverse effects on the wafer 500 to be processed.

[0041] Optionally, the bearing portion 210 and the tip portion 220 may be an integrated structure, thereby reducing assembly and facilitating assembly in the corresponding through hole 112 .

[0042] In order to simplify the overall structure of the wafer carrier, in the wafer carrier disclosed in the embodiment of the present application, the driving mechanism 300 may include a lifting driving member 310 and a lifting plate 320, a group of bearing rods 200 corresponding to the driving mechanism 300 is connected to the lifting plate 320, the lifting plate 320 is connected to the lifting driving member 310, the lifting driving member 310 can drive the lifting plate 320 to rise and fall, and the lifting plate 320 can drive the bearing rods 200 to move along the corresponding through hole 112. In this case, one lifting plate 320 realizes the bearing connection function for the corresponding group of bearing rods 200. Since a group of bearing rods 200 includes a plurality of bearing rods 200 arranged at intervals, it is possible to realize the bearing connection of a plurality of bearing rods 200 in a group of bearing rods 200 through one lifting plate 320, so that the lifting and lowering drive of the plurality of bearing rods 200 can be realized through one lifting plate 320, which is conducive to simplifying the structure of the wafer carrier. The lifting driving member 310 in the present application can be a linear motor, a hydraulic telescopic rod, etc., and the present application does not limit the specific type of the lifting driving member 310.

[0043] In a further technical solution, one of the base 100 and the lifting plate 320 may be provided with a guide hole, and the other may be provided with a guide member, and the guide hole and the guide member are guided and matched in the lifting direction of the lifting plate 320, and are positioned and matched in a plane perpendicular to the lifting direction. In this case, the base 100 and the lifting plate 320 can be guided based on the base 100, which can help improve the stability of the lifting and lowering movement of the lifting plate 320, and at the same time, can also alleviate the lateral displacement of the bearing rod 200.

[0044] In the wafer carrier device disclosed in the embodiment of the present application, the base 100 may be provided with a temperature regulating groove 113, and a plurality of through holes 112 are provided at the bottom of the temperature regulating groove 113. The carrier rod 200 may pass through the through hole 112 and be arranged in the temperature regulating groove 113 under the drive of the driving mechanism 300, and the temperature regulating groove 113 is used to accommodate the temperature regulating gas transported through the through hole 112. In this case, the through hole 112 can not only realize the mobile cooperation with the carrier rod 200, but also transport the temperature regulating gas into the temperature regulating groove 113, so that the through hole 112 has multiple functions. In the above scheme, the opening of the through hole 112 can make it unnecessary to specially set up a pipeline for transporting the temperature regulating gas into the temperature regulating groove 113 in the wafer carrier device, thereby simplifying the structure of the wafer carrier device.

[0045] An embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes any one of the wafer carrying devices described above.

[0046] In the semiconductor process equipment disclosed in the embodiment of the present application, the semiconductor process equipment may further include a distance detection device 400 and a controller, the controller being connected to the distance detection device 400 and the driving mechanism 300 respectively, and the controller being used to control the driving mechanism 300 to shut down when the actual distance detected by the distance detection device 400 reaches a preset distance.

[0047] In the above case, the distance detection device 400 can detect the distance that the driving mechanism 300 drives the supporting rod 200 to extend outside the through hole 112. The preset distance is the distance that the supporting rod 200 needs to extend outside the through hole 112 in the sub-area 111 to achieve specific temperature regulation. The value of the preset distance can be set according to the temperature that needs to be adjusted in different sub-areas 111. The setting of the controller can realize feedback on the driving result of the driving mechanism 300 in the wafer carrier, which is conducive to realizing the automatic control of temperature regulation in different sub-areas 111 in the wafer carrier. The distance detection device 400 can specifically be a laser distance sensor, an infrared distance sensor, etc., and the present application does not limit the specific type of the distance detection device 400.

[0048] In the semiconductor process equipment disclosed in the embodiment of the present application, the semiconductor process equipment may include a process chamber and a temperature measuring camera, the temperature measuring camera is connected to the controller, the controller is connected to the driving mechanism 300, the temperature measuring camera and the wafer supporting device are arranged in the process chamber, and the temperature measuring camera can be arranged above the base 100. During the process, the temperature measuring camera can provide the controller with real-time feedback on the temperature of the wafer 500 to be processed on the base 100, so that the controller can control the driving mechanism 300 corresponding to the sub-area 111 where the temperature needs to be adjusted to drive the corresponding supporting rod 200 to adjust the height extending out of the through hole 112, thereby adjusting the temperature of the sub-area 111, and then adjusting the temperature of the wafer 500 to be processed, thereby improving the temperature uniformity of the wafer 500 to be processed.

[0049] like Figures 4 to 6 As shown, the embodiment of the present application discloses a control method for semiconductor process equipment, the semiconductor process equipment is the semiconductor process equipment described above, and the disclosed control method for semiconductor process equipment may include:

[0050] S101: Debug the wafer carrier before the process.

[0051] In S101, before the plasma etching process, the temperature in the wafer carrier is adjusted to a suitable temperature using a heater and a temperature-adjusting gas, that is, the temperature difference in the wafer carrier is small, so as to achieve preliminary temperature adjustment of the wafer carrier.

[0052] S102: In the process, according to the corresponding matching relationship between the etching rate and the height of the carrying rod 200, the carrying rod 200 in at least one sub-region 111 is adjusted so that the etching rate difference of the wafer regions corresponding to the multiple sub-regions 111 is within a preset rate difference.

[0053] The uneven temperature in different sub-areas 111 of the wafer carrier will lead to uneven temperature of the wafers 500 to be processed set in different sub-areas 111, and the temperature of the wafers 500 to be processed will affect the etching rate of the etching process. In S102, when the difference between the etching rate of the wafers 500 to be processed in the sub-area 111 and the preset rate is too large, the driving mechanism 300 corresponding to the sub-area 111 will adjust the height of the supporting rod 200 in the sub-area 111 extending out of the through hole 112, so that the difference between the etching rate of the wafers 500 to be processed in multiple sub-areas 111 and the preset rate is within the preset rate difference. The preset rate is the average etching rate that the multiple sub-areas 111 in the wafer carrier need to reach, and the etching rate refers to the speed at which the surface material of the wafer 500 to be processed is removed during the etching process.

[0054] It should be noted that, since the different heights of the supporting rod 200 extending out of the through hole 112 can adjust the temperature in the sub-area 111 to different degrees, the wafers 500 to be processed arranged in different sub-areas 111 have different temperatures, and the plasma etching process is more sensitive to temperature, and different temperatures lead to different etching rates in the plasma etching process. In other words, in the present application, the etching rates of the wafers 500 to be processed corresponding to the different sub-areas 111 can be adjusted by adjusting the temperatures of the different sub-areas 111.

[0055] In a further control method, the surface of the base 100 may include an annular area 110 and a circular central area 120, the annular area 110 includes a plurality of sub-areas 111 distributed along the circumferential direction of the annular area 110, the circular central area 120 includes a plurality of sub-areas 111, the annular area 110 is multiple and nested in sequence, all the annular areas 110 and the circular central area 120 are concentrically arranged, the wafer carrier includes a plurality of heaters, a heater is provided inside the circular central area 120 and each annular area 110, and each heater corresponds to only one annular area 110, and debugging the wafer carrier before the process may include: determining debugging parameters; that is, S101 may include:

[0056] S201: Determine debugging parameters.

[0057] The wafer carrier is debugged according to the debugging parameters, wherein: determining the debugging parameters may include, that is, S201 includes:

[0058] S301: placing a first test wafer on the base 100;

[0059] S302: Control the heaters corresponding to all the annular regions 110 and the circular central region 120 so that the temperature difference between the regions on the first test wafer that are opposite to the annular regions 110 and the circular central region 120 is less than or equal to the heating parameters of the heaters when the temperature difference is less than or equal to the first preset temperature difference;

[0060] The wafer to be processed 500 may include a first test wafer and a second test wafer.

[0061] S303 : Recording heating parameters of each heater when the temperature difference between the areas on the first test wafer opposite to each annular area 110 and the circular central area 120 is less than or equal to a first preset temperature difference.

[0062] S304: When the temperature difference between the areas on the first test wafer that are opposite to each annular area 110 and the circular center area 120 is less than or equal to a first preset temperature difference, at least one of the multiple driving mechanisms 300 corresponding to each annular area 110 and the circular center area 120 is adjusted so that the temperature difference between the multiple sub-areas 111 within each annular area 110 and the circular center area 120 is less than or equal to a second preset temperature difference.

[0063] That is to say, in S304, when the temperature difference between the first test wafer and the corresponding annular area 110 or circular center area 120 is less than or equal to the first preset temperature difference, the extension height of the corresponding supporting rod 200 can be further finely adjusted by the driving mechanism 300, so that the temperature difference between the multiple sub-areas 111 is smaller, that is, the temperature difference between the multiple sub-areas 111 in the same annular area 110 or circular center area 120 is less than or equal to the second preset temperature difference, and the absolute value of the second preset temperature difference can be smaller than the absolute value of the first preset temperature difference.

[0064] S305: Recording the height parameters of each group of bearing rods 200 extending out of the through holes 112 when the temperature difference between each annular area 110 and the multiple sub-areas 111 in the circular central area 120 is less than or equal to the second preset temperature difference.

[0065] S306: Using the heating parameter and the height parameter as debugging parameters.

[0066] In this case, before the subsequent etching process, the heating parameters and height parameters of the wafer carrier can be directly adjusted, which is conducive to the etching rate difference of the wafer carrier during the etching process being within the preset rate difference, thereby improving the uniformity of the etching rate of the wafer 500 to be processed.

[0067] In the control method of the semiconductor process equipment disclosed in the present application, optionally, the control method may further include:

[0068] S102: Establishing a corresponding matching relationship between the etching rate and the height of the supporting rod 200, wherein:

[0069] S102 may include:

[0070] S401: After being debugged at the wafer carrier, a second test wafer is placed on the base 100;

[0071] S402: adjusting at least one of the plurality of driving mechanisms 300 corresponding to each annular region 110 and the circular central region 120, and recording the etching rate of each sub-region 111 and the height parameters of a corresponding group of supporting rods 200;

[0072] S403: Establishing a relationship between the etching rate and the height parameter to form a corresponding matching relationship.

[0073] In the above case, the height of the supporting rod 200 extending out of the through hole 112 corresponds to the temperature of the sub-area 111, and the temperature of the sub-area 111 corresponds to the etching rate of the second test wafer arranged in the sub-area 111, so that there is an indirect corresponding matching relationship between the height of the supporting rod 200 extending out of the through hole 112 and the etching rate of the second test wafer. After testing this matching relationship through the second test wafer, the corresponding height parameters of the supporting rod 200 and the corresponding etching rate can be recorded, and a database can be formed, which is conducive to the subsequent direct adjustment of the height of the supporting rod 200 for the required etching rate through the parameters in the database, and then it is conducive to improving the efficiency of the subsequent debugging of the wafer supporting device, and at the same time, it is conducive to ensuring the effectiveness of the etching rate of the wafer 500 to be processed in the wafer supporting device after debugging.

[0074] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0075] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A wafer carrying device, characterized in that: The invention comprises a base (100), a plurality of groups of bearing rods (200) and a plurality of driving mechanisms (300), each group of the bearing rods (200) comprising a plurality of the bearing rods (200) distributed at intervals, a surface of the base (100) comprising a plurality of sub-regions (111), the plurality of sub-regions (111) corresponding one-to-one to the plurality of groups of bearing rods (200), the sub-regions (111) being provided with a plurality of through holes (112), the plurality of bearing rods (200) in a group of the bearing rods (200) corresponding to the sub-regions (111) being arranged one-to-one in the plurality of through holes (112) The driving mechanism (300) is arranged in the through hole (112) and is slidably matched with the through hole (112), each of the driving mechanisms (300) corresponds to a group of the bearing rods (200), and the driving mechanism (300) is connected to the corresponding group of the bearing rods (200), and the driving mechanism (300) is used to drive the corresponding group of the bearing rods (200) to move along the through hole (112), so as to change the fluidity of the temperature-adjusting gas in the corresponding sub-area (111) by adjusting the height of the corresponding bearing rods (200) extending out of the through hole (112), thereby changing the temperature of the corresponding sub-area (111).

2. The wafer carrier device according to claim 1, characterized in that: The surface of the base (100) includes a circular central area (120) and an annular area (110), wherein the annular area (110) surrounds the circular central area (120), the annular area (110) includes a plurality of sub-areas (111) distributed along the circumferential direction of the annular area (110), and the circular central area (120) includes a plurality of sub-areas (111) distributed along the circumferential direction of the circular central area (120).

3. The wafer carrier device according to claim 2, characterized in that: There are multiple annular areas (110) which are nested in sequence. All of the annular areas (110) are arranged concentrically with the circular central area (120). The wafer carrying device includes multiple heaters. One of the heaters is provided inside the circular central area (120) and each of the annular areas (110).

4. The wafer carrier device according to claim 3, characterized in that: In two adjacent annular regions (110), the number of sub-regions (111) contained in the annular region (110) with a larger diameter is greater than the number of sub-regions (111) contained in the annular region (110) with a smaller diameter; the number of sub-regions (111) contained in the annular region (110) adjacent to the circular central region (120) is greater than or equal to the number of sub-regions (111) contained in the circular central region (120).

5. The wafer carrier device according to claim 3 or 4, characterized in that: In the same annular area (110), the arc angles corresponding to the plurality of sub-areas (111) are all equal, and the arc angles corresponding to the plurality of sub-areas (111) in the circular central area (120) are all equal.

6. The wafer carrying device according to claim 1, characterized in that: The bearing rod (200) comprises a bearing portion (210) and a tip portion (220) connected to the bearing portion (210); the first end of the bearing portion (210) is connected to the driving mechanism (300); the second end of the bearing portion (210) is connected to the tip portion (220); the tip portion (220) is coaxially arranged with the bearing portion (210); the diameter of the tip portion (220) is smaller than the diameter of the bearing portion (210); and at least a portion of the tip portion (220) can extend out of the through hole (112) through the through hole (112).

7. The wafer carrier device according to claim 1, characterized in that: The driving mechanism (300) comprises a lifting driving member (310) and a lifting plate (320); a group of the bearing rods (200) corresponding to the driving mechanism (300) are connected to the lifting plate (320); the lifting plate (320) is connected to the lifting driving member (310); the lifting driving member (310) can drive the lifting plate (320) to rise and fall; and the lifting plate (320) can drive the bearing rods (200) to move along the corresponding through holes (112).

8. The wafer carrying device according to claim 7, characterized in that: One of the base (100) and the lifting plate (320) is provided with a guide hole, and the other is provided with a guide member, the guide hole and the guide member are guided and matched in the lifting direction of the lifting plate (320), and are positioned and matched in a plane perpendicular to the lifting direction.

9. The wafer carrying device according to claim 1, characterized in that: The base (100) is provided with a temperature regulating groove (113), and a plurality of through holes (112) are provided at the bottom of the temperature regulating groove (113). The supporting rod (200) can be driven by the driving mechanism (300) to pass through the through holes (112) and be arranged in the temperature regulating groove (113). The temperature regulating groove (113) is used to accommodate the temperature regulating gas transported through the through holes (112).

10. A semiconductor process equipment, characterized in that: A wafer carrier comprising the wafer carrier as described in any one of claims 1 to 9.

11. The semiconductor process equipment according to claim 10, characterized in that: The semiconductor process equipment further comprises a distance detection device (400) and a controller, wherein the controller is connected to the distance detection device (400) and the driving mechanism (300) respectively, and the controller is used to control the driving mechanism (300) to be turned off when the actual distance detected by the distance detection device (400) reaches a preset distance.

12. A control method for semiconductor process equipment, characterized in that: The semiconductor process equipment is the semiconductor process equipment according to claim 10 or 11, and the control method comprises: Debugging the wafer carrier before the process; In the process, the carrier rod (200) in at least one of the sub-regions (111) is adjusted according to the corresponding matching relationship between the etching rate and the height of the carrier rod (200), so that the etching rate difference of the wafer regions corresponding to the multiple sub-regions (111) is within a preset rate difference.

13. The control method according to claim 12, characterized in that: The surface of the base (100) comprises an annular region (110) and a circular central region (120); the annular region (110) comprises a plurality of sub-regions (111) distributed along the circumferential direction of the annular region (110); the circular central region (120) comprises a plurality of sub-regions (111); the annular region (110) is multiple and nested in sequence; all the annular regions (110) and the circular central region (120) are concentrically arranged; the wafer carrying device comprises a plurality of heaters; the circular central region (120) and each of the annular regions (110) are each provided with a heater; and the step of debugging the wafer carrying device before the process comprises: Determine debugging parameters; The wafer carrying device is debugged according to the debugging parameters, wherein: the determining of the debugging parameters includes: placing a first test wafer on the base (100); Controlling the heaters corresponding to all the annular regions (110) and the circular central region (120) so that the temperature difference between the regions on the first test wafer that are opposite to each of the annular regions (110) and the circular central region (120) is less than or equal to a first preset temperature difference; Recording heating parameters of each of the heaters when the temperature difference between the areas on the first test wafer that are opposite to each of the annular areas (110) and the circular central area (120) is less than or equal to the first preset temperature difference; When the temperature difference between the areas on the first test wafer that are opposite to each of the annular areas (110) and the circular central area (120) is less than or equal to a first preset temperature difference, at least one of the plurality of driving mechanisms (300) corresponding to each of the annular areas (110) and the circular central area (120) is adjusted so that the temperature difference between the plurality of sub-areas (111) within each of the annular areas (110) and the circular central area (120) is less than or equal to a second preset temperature difference; Recording the height parameters of each group of the bearing rods (200) extending out of the through hole (112) when the temperature difference between each of the annular areas (110) and the plurality of sub-areas (111) in the circular central area (120) is less than or equal to the second preset temperature difference; The heating parameter and the height parameter are used as the debugging parameters.

14. The control method according to claim 12, characterized in that: The control method further comprises: establishing a corresponding matching relationship between the etching rate and the height of the carrying rod (200), wherein: The step of establishing a corresponding matching relationship between the etching rate and the height of the supporting rod (200) comprises: After being debugged at the wafer carrier, placing a second test wafer on the base (100); Adjusting at least one of the plurality of driving mechanisms (300) corresponding to each annular region (110) and the driving mechanism (300) corresponding to the circular central region (120), and recording the etching rate of each sub-region (111) and the height parameters of a corresponding group of the supporting rods (200); A relationship between the etching rate and the height parameter is established to form the corresponding matching relationship.

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