Reliability verification device and method for temperature sensor chip

Abstract

The present invention provides a reliability verification device and method for a temperature sensor chip, comprising a temperature conversion module, a voltage shock module, a high and low voltage control system, and a high and low temperature control system; the high and low temperature control system controls the ambient temperature of the temperature sensor chip; the temperature conversion module performs analog-to-digital conversion when reading the temperature of the temperature sensor chip; the high and low voltage control system controls the ambient voltage of the temperature sensor chip; and the voltage shock module performs voltage shock on the temperature sensor chip. Compared with the Weibull distribution, the model of the present invention can more accurately and scientifically evaluate the reliability of high-precision temperature sensor chips. The verification scheme is designed as a modified version of the high and low temperature static discharge working life test (HLTESDOL). Compared with the traditional HTOL test, it requires fewer samples, greatly shortens the experimental time, and has high accuracy.

Description

Technical Field

[0001] The present invention relates to the technical field of chip design, and more particularly to a reliability verification device and method for a temperature sensor chip, and more particularly to a reliability design and verification device for a high-precision temperature sensor chip. Background Art

[0002] Chip reliability can be considered the lifeblood of a chip product, and high quality and durability are often the key to a superior product's competitiveness. Product verification often involves three key issues: what to verify, how to verify, and where to verify. Addressing these three issues ensures quality and reliability, allowing manufacturers to bring products to market in large quantities and customers to use them with confidence. Reliability measures a product's durability, answering the question of how long a product's lifecycle will last—simply put, how long it will last. Quality addresses current issues, while reliability addresses future problems. Most semiconductor devices can last for many years under normal use. However, we cannot wait until years have passed before studying the devices; we must increase the stress they are subjected to. Stress can enhance or accelerate potential failure mechanisms, helping to identify the root cause and implement preventative measures. Therefore, reliability design and verification are crucial components of chip R&D.

[0003] High-precision temperature sensor chips are a relatively new product in the market. Currently, the industry lacks a clear reliability verification scheme for these products. Their small size, ultra-low power consumption, and high environmental sensitivity also pose challenges in evaluating them. According to JEDEC standards, the current mainstream approach is to use HTOL (High Temperature Operating Life) testing to estimate chip lifespan and, therefore, assess chip reliability. However, traditional HTOL testing requires three batches of 77 samples per batch, placing high demands on quantity. The test can take 1000 hours, a significant time span and significant resource consumption. Pcs stands for "pieces," which is the plural form of "number," "unit," or "unit."

[0004] Chinese invention patent publication CN105004981A discloses a method for accelerating the estimation of LED chip lifespan. The method includes selecting two samples, measuring the initial reverse current at two different reverse voltages before aging, performing an aging test by accelerating the luminous flux decay at high temperature, measuring the reverse current at two different reverse voltages after aging, and estimating the lifespan using a formula. By applying two different reverse voltages to measure the reverse current of the sample before and after light decay, the LED chip lifespan can be estimated using a calculation formula.

[0005] With respect to the above-mentioned related technologies, the inventors believe that the above-mentioned traditional HTOL experiment requires a high number of sample particles, takes a long time to conduct the experiment, has a low accuracy rate, and has poor reliability. Summary of the Invention

[0006] In view of the defects in the prior art, the object of the present invention is to provide a reliability verification device and method for a temperature sensor chip.

[0007] According to the present invention, a reliability verification device for a temperature sensor chip includes a temperature conversion module, a voltage impact module, a high and low voltage control system, and a high and low temperature control system;

[0008] The high and low temperature control system controls the ambient temperature of the temperature sensor chip;

[0009] The temperature conversion module performs analog-to-digital conversion when reading the temperature from the temperature sensor chip;

[0010] The high and low voltage control system controls the ambient voltage of the temperature sensor chip;

[0011] The voltage shock module performs voltage shock on the temperature sensor chip.

[0012] Preferably, the temperature conversion module is connected to the aging circuit board;

[0013] The temperature sensor chip is mounted on a printed circuit board using surface mount technology.

[0014] Aging circuit boards connect printed circuit boards;

[0015] The voltage shock module includes an electrostatic discharge voltage shock module, and the electrostatic discharge voltage shock module is connected to the printed circuit board.

[0016] According to the present invention, a reliability verification method for a temperature sensor chip is provided, using a reliability verification device for a temperature sensor chip, and includes the following steps:

[0017] Improved experimental steps: verify the temperature sensor chip through high and low temperature static discharge working life test, and obtain the number of tested samples that pass the verification;

[0018] Failure rate calculation steps: Use the number of verified test samples combined with the accelerated reliability model to calculate the failure rate of the temperature sensor chip;

[0019] Evaluation steps: Verify the reliability of the temperature sensor chip through failure rate.

[0020] Preferably, the improved experimental steps include the following steps:

[0021] Parameter testing steps before the experiment: prepare a specified batch of samples to be tested and test the key parameters of the temperature sensor chip before the experiment;

[0022] Experimental steps: the environment of the sample to be tested is subjected to a high-temperature and low-pressure experiment for a first predetermined time and a low-temperature and high-pressure experiment for a second predetermined time alternately;

[0023] By sending continuous pulses to the temperature sensor chip to perform analog-to-digital conversion when reading the temperature, a voltage shock is applied to the temperature sensor chip after the analog-to-digital conversion;

[0024] Post-experiment parameter testing steps: Test the key parameters of the temperature sensor chip after the experiment;

[0025] Sample quantity acquisition step: Compare the test results of key parameters before and after the experiment to obtain the number of samples to be tested that have passed the verification ss.

[0026] Preferably, the improved experimental steps further include a patch step: before verification, the temperature sensor chip is patched on a printed circuit board using surface mounting technology to obtain a sample to be tested.

[0027] Preferably, the improving experimental step further comprises repeating the experimental step: repeating the cycle of the experimental step.

[0028] Preferably, in the sample quantity acquisition step, if the test of the sample fails or the front-to-back drift exceeds a predetermined percentage, the verification is determined to have failed, otherwise the verification is passed.

[0029] Preferably, in the improved experimental step, the key parameters include the temperature accuracy T of the temperature sensor chip AC , conversion current I CON , conversion time T CON , Standby current I STB , register values and leakage current LKG.

[0030] Preferably, the verification method further comprises the step of establishing an accelerated reliability model:

[0031] The Arrhenius formula accelerated reaction model is as follows:

[0032]

[0033] Among them, AF T represents the Arrhenius temperature acceleration factor; E a represents activation energy; k represents the Boltzmann constant; T u Indicates the temperature under daily use conditions; T a Indicates the temperature under accelerated conditions;

[0034] Build an accelerated reliability model:

[0035]

[0036] Among them, x 2 represents chi-square test; α represents chi-square equation confidence interval; dF represents degrees of freedom; A(T a ) represents the acceleration factor related to temperature; B(V cc ) represents the acceleration factor related to voltage; C(f T ) represents the acceleration factor related to the analog-to-digital conversion frequency when reading temperature; D(f V ) represents the acceleration factor related to the voltage shock frequency; ss represents the number of samples; FIT is equivalent to the unit of measurement of failure rate, and its plural form is FTIs.

[0037] Preferably, in the experimental steps, high temperature includes 100°C, 125°C or 150°C, low voltage includes 1.5V, 2.0V or 2.5V, low temperature includes -75°C, -50°C or -25°C, and high voltage includes 5.0V, 5.5V or 6.0V.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] 1. Compared with the Weibull distribution, the model of the present invention can more accurately and scientifically evaluate the reliability of high-precision temperature sensor chips.

[0040] 2. The verification scheme of the present invention is designed as an improved version of the high and low temperature static discharge working life test (HLTESDOL). Compared with the traditional HTOL test, it requires fewer samples, greatly shortens the test time, and has higher accuracy.

[0041] 3. The analog-to-digital conversion and high-voltage impact device during high-frequency temperature reading of the present invention can also greatly improve the experimental acceleration efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Other features, objects and advantages of the present invention will become more apparent upon reading the detailed description of non-limiting embodiments with reference to the following drawings:

[0043] Figure 1 This is a flow chart of the reliability verification method of the present invention;

[0044] Figure 2 This is a module diagram of the reliability verification device of the present invention;

[0045] Figure 3 This is the temperature drift diagram caused by the traditional HTOL 1000h experiment;

[0046] Figure 4 This is a temperature drift diagram caused by the HLTESDOL 96h experiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention will be described in detail below with reference to specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those skilled in the art, several changes and improvements can be made without departing from the scope of the present invention. These all fall within the scope of protection of the present invention.

[0048] Embodiment 1 of the present invention discloses a reliability verification method for a temperature sensor chip. The bathtub curve is usually used as a visual model to illustrate the three critical periods of product failure rate, but it is usually not possible to obtain sufficient short-term and long-term failure information to accurately model a large number of products using a calibrated bathtub curve, so reliability modeling is generally used for estimation. There are three main stages in the life of a semiconductor product. Early failure rate: This stage is characterized by a high initial failure rate, which will decrease rapidly in the later stages. Normal life: The failure rate in this stage remains stable throughout the useful life of the device. This failure rate is expressed in units of "FIT". Degradation stage: This stage indicates the point in time when inherent degradation mechanisms begin to dominate and the failure rate begins to increase exponentially. The product life is usually defined as the time period from initial production to the occurrence of degradation.

[0049] For a given sample size n, there will be m failures after t hours of operation. If n runs for t hours before the number of failures m is recorded, the failure rate λ is:

[0050]

[0051] The failure rate λ here is a basic definition, which refers to the probability that a certain number of samples will fail after a certain period of time under real conditions. In practical applications, especially when the sample size is large, it is difficult to calculate.

[0052] Time-based failure FIT (number of devices failing per billion operating hours):

[0053]

[0054]

[0055] Among them, t1 represents the first failure time; t2 represents the second failure time; t3 represents the third failure time; t m The mean time to failure (MTTF) is a basic definition that can be used to roughly estimate chip lifespan using the Weibull distribution.

[0056] The second embodiment of the present invention discloses a reliability verification method for a temperature sensor chip. Unlike the first embodiment, the Weibull distribution is derived from the weakest link model or the cascade model, making it suitable for the distribution of cumulative wear failures in electronic products. Because its distribution parameters can be easily inferred from the failure probability density, it is widely used in data processing for various life testing applications. Compared to the lognormal distribution, the Weibull distribution has greater applicability.

[0057] The failure probability density function f(t) of the Weibull distribution is:

[0058]

[0059] Where β is the shape parameter of the distribution; η is the size parameter of the distribution; and e is a natural constant.

[0060] The corresponding cumulative failure distribution function F(t) is:

[0061]

[0062] Under this failure distribution model, the failure rate λ and MTTF of the components can be expressed as:

[0063]

[0064]

[0065] Where d represents the differential; R(t) is one of the representations of the Weibull distribution, R(t) = 1-F(t); the commonly used unit of failure rate λ is FIT(10 -9 The failure rate λ here is the failure rate estimated by combining the Weibull distribution.

[0066] The third embodiment of the present invention discloses a reliability design and verification device for a high-precision temperature sensor chip. Figure 1 and Figure 2 As shown, it includes a temperature conversion module, a voltage shock module (ESD high-voltage shock module), a high and low voltage control system, and a high and low temperature control system. "High precision" means that the temperature accuracy is within ±0.1°C.

[0067] The high-precision temperature sensor chip is mounted on the printed circuit board using surface mount technology.

[0068] The high and low temperature control system controls the temperature of the sample during the accelerated experiment. That is, the high and low temperature control system controls the ambient temperature of the temperature sensor chip.

[0069] The temperature conversion module is connected to the Burn-in Board and performs analog-to-digital conversion when the temperature sensor chip reads the temperature.

[0070] The temperature conversion module is connected to the Burn-in Board, the Burn-in Board is connected to the printed circuit board, the voltage shock module includes an electrostatic discharge voltage shock module, and the electrostatic discharge voltage shock module is connected to the printed circuit board.

[0071] The Burn-in Board's I / O pins (IO pins) are connected to the first I / O pin on the printed circuit board. The temperature conversion module connects all pins to power them up (including the VCC and GND pins), effectively ensuring normal chip operation. The second I / O pin on the printed circuit board is connected to the ESD high-voltage surge module. This high-voltage surge module discharges the ESD voltage applied to the I / O pins to the power supply VCC and GND pins.

[0072] High and low voltage control system: controls the voltage of sample accelerated experiment. High and low voltage control system controls the ambient voltage of the temperature sensor chip.

[0073] ESD high-voltage shock module: performs a high-voltage shock similar to an ESD experiment on the sample. The voltage shock module (electrostatic discharge voltage shock module) performs a voltage shock on the temperature sensor chip.

[0074] The third embodiment of the present invention further discloses a reliability verification method for a temperature sensor chip, which uses a reliability verification device for a temperature sensor chip and includes the following steps:

[0075] Steps to build an accelerated reliability model: Because different IC failure mechanisms exist, there are correspondingly different MTTF and failure rate data. The mechanism most likely to cause failure is the one with the shortest MTTF.

[0076] The Arrhenius equation accelerated reaction model is as follows:

[0077]

[0078] Among them, AF T represents the Arrhenius temperature acceleration factor; Ea represents activation energy; k represents the Boltzmann constant; T u Indicates the temperature under daily use conditions; T a Indicates the temperature under accelerated conditions.

[0079] Aiming at the reliability of high-precision temperature sensor chips, an accelerated reliability model (SARM model, Sensylink Accelerated Reliabity Model) is established:

[0080]

[0081] Among them, x 2 represents chi-square test; α represents chi-square equation confidence interval; dF represents degrees of freedom; A(T a ) represents the acceleration factor related to temperature; B(V cc ) represents the acceleration factor related to voltage; C(f T ) represents the acceleration factor related to the analog-to-digital conversion frequency when reading temperature; D(f V ) represents the acceleration factor related to the voltage surge frequency (high-voltage surge frequency); ss represents the number of samples; FIT is equivalent to the unit of measurement for failure rate; FIT is a unit of measurement, and the plural form FTIs is customarily used. The failure rate λ here is the value obtained through simulation using the SARM model and can be used to calculate the chip's operating life.

[0082] Based on the principle and usage scenarios of high-precision temperature sensor chips, the acceleration factor A is related to the temperature of the acceleration test, the acceleration factor B is related to the voltage of the acceleration test, the acceleration factor C is related to the temperature conversion frequency of the acceleration test, and the acceleration factor D is related to the high-voltage shock frequency of the acceleration test. The failure rate λ can be used to calculate the chip's operating life. Compared with the Weibull distribution, it is more accurate and more suitable for high-precision temperature sensor chips.

[0083] Improved experimental steps: The temperature sensor chip is verified through high and low temperature static discharge working life experiments, and the number of tested samples that pass the verification is obtained.

[0084] Specifically, this model was used to design a modified reliability verification scheme for high- and low-temperature static discharge life tests. This involved alternating high-temperature (100°C / 125°C / 150°C) low-voltage (1.5V / 2.0V / 2.5V) tests with low-temperature (-75°C / -50°C / -25°C) high-voltage (5.0V / 5.5V / 6.0V) tests. During these tests, the chip was briefly allowed to perform analog-to-digital conversions to read the temperature. After the conversion, the chip was subjected to a high-voltage shock similar to an ESD test to further accelerate chip aging. ESD stands for Electro-Static Discharge (ESD).

[0085] As shown in Table 1, the temperature drift of the temperature sensor chip can often represent the aging degree of the chip. Through data verification of the model, the temperature drift caused by a single cycle of high temperature and low pressure for 48 hours and low temperature and high pressure for 48 hours, that is, the temperature drift caused by the HLTESDOL 96-hour experiment is equivalent to the temperature drift caused by the traditional HTOL 1000-hour experiment (such as Figure 3 and Figure 4 This greatly improves the acceleration efficiency of life experiments.

[0086] Table 1 Temperature drift of HLTESDOL 96h experiment and HTOL 1000h experiment

[0087] 0h HTOL-1000h 0h HLTESDOL-96h 0.03125 0.082187 -0.01563 0.067812 0.015625 0.050937 0 0.067812 0.023438 0.066562 -0.05469 0.013125 0 0.05875 -0.03125 0.044375 0 0.066562 -0.00781 0.052187 0.007813 0.05875 0.007813 0.052187 -0.01563 0.0275 -0.01563 0.044375 -0.03125 0.050937 -0.02344 0.02875 0 0.082187 0 0.052187 -0.01563 0.066562 -0.0625 0.013125

[0088] The improved experimental steps include the following:

[0089] Mounting step: Before verification, the temperature sensor chip is mounted on the printed circuit board using surface mounting technology to obtain the sample to be tested.

[0090] Specifically, before verification, the chip must be mounted on a PCB using SMT. This simulates the chip's actual application scenario and improves stability. After mounting, it is connected to the BurninBoard, and after powering on, the working circuit can be connected. It should be noted that SMT requires materials with a high glass transition temperature. SMT stands for Surface Mounted Technology in English, and its Chinese translation is Surface Mount Technology. PCB stands for Printed Circuit Board in English, and its Chinese translation is Printed Circuit Board.

[0091] Parameter test steps before the experiment: prepare a specified batch of samples to be tested and test the key parameters of the temperature sensor chip before the experiment. The key parameters include the temperature accuracy T of the temperature sensor chip AC , conversion current I CON , conversion time T CON , Standby current I STB, OTP register value and leakage current LKG.

[0092] Specifically, three batches of samples (10 pcs each) were prepared to test the temperature accuracy T of the chip before the experiment. AC , conversion current I CON , conversion time T CON , Standby current I STB , OTP register values, leakage current LKG, and other key parameters (functional testing and ATE testing are combined). ATE stands for Automatic Test Equipment. OTP stands for One Time Programmable.

[0093] Experimental steps: The sample is subjected to alternating high-temperature, low-pressure experiments for a first predetermined time, and low-temperature, high-pressure experiments for a second predetermined time. High temperatures include 100°C, 125°C, or 150°C; low voltages include 1.5V, 2.0V, or 2.5V; low temperatures include -75°C, -50°C, or -25°C; and high voltages include 5.0V, 5.5V, or 6.0V. The temperature sensor chip is then subjected to analog-to-digital conversion by sending continuous pulses to read the temperature. After the conversion, a voltage shock is applied to the temperature sensor chip.

[0094] Specifically, the system undergoes alternating 24-hour high-temperature (100°C / 125°C / 150°C) low-voltage (1.5V / 2.0V / 2.5V) tests, followed by 24-hour low-temperature (-75°C / -50°C / -25°C) high-voltage (5.0V / 5.5V / 6.0V) tests. During these tests, a special burn-in board (burn-in circuit board) sends continuous pulses to the chip, performing analog-to-digital conversion (at intervals of 10ms / 15ms / 20ms / 25ms) while frequently reading the temperature. After this conversion, the chip is subjected to a high-voltage shock similar to an ESD test. The voltage of the high-voltage shock is the maximum voltage the temperature sensor chip can withstand. Before verification, the temperature sensor chip undergoes a voltage test to determine its maximum voltage. Different temperature sensor chips have different maximum voltages. The high-temperature, low-voltage test is performed first. The temperature and voltage values are not fixed and should be selected based on the values in parentheses and the needs of different products. The special Burn-in Board allows the chip to be tested. In addition to simulating chip load, it can also perform analog-to-digital conversion and high-voltage shock when cooperating with the device to read temperature.

[0095] Repeat the experimental steps: Repeat the experimental steps in a cycle. Specifically, repeat the high and low temperature experiment for one cycle; two cycles of 96 hours are equivalent to 1000 hours of traditional HTOL experiment.

[0096] Post-experiment parameter test steps: Test the key parameters of the temperature sensor chip after the experiment. Specifically, test the temperature accuracy T of the chip after the experiment. AC , conversion current I CON , conversion time T CON , Standby current I STB , OTP register value, leakage current LKG and other key parameters.

[0097] Sample quantity acquisition step: Compare the test results of key parameters before and after the experiment. If the test sample fails or the drift before and after exceeds a predetermined percentage, the verification is considered failed. Otherwise, the verification is passed. The number of samples that have passed the verification, ss, is obtained.

[0098] Specifically, the test results for each parameter before and after the experiment are compared. If a test failure occurs or the drift exceeds a certain percentage (set to 10%, 20%, or 30% depending on the requirements), the verification is considered a failure. Otherwise, the verification passes. Failure indicates failure, while Pass indicates pass. Failure indicates sample verification failure, and only after a Pass is the failure rate λ considered for calculation.

[0099] Failure rate calculation steps: Use the number of verified test samples combined with the SARM reliability model to calculate the failure rate of the temperature sensor chip.

[0100] Specifically, the above results are combined with the SARM reliability model (Sensylink Accelerated Reliabity Model):

[0101]

[0102] Calculate the chip failure rate λ and estimate the chip's service life MTTF:

[0103]

[0104] Here, f(λ) represents a positive correlation with λ, and MTTF is negatively correlated with λ. This allows the reliability of high-precision temperature sensor chips to be evaluated.

[0105] Evaluation steps: Verify the reliability of the temperature sensor chip using the failure rate. Specifically, based on the failure rate λ and the service life (MTTF), the chip's normal operating time can be estimated, thereby evaluating reliability. After calculating the chip's service life, users can be provided with a normal operating time (i.e., guaranteed to fail within a certain period of normal use). Different standards are generally used depending on the application scenario. The failure rate and MPPT are negatively correlated. The lower the failure rate, the longer the estimated service life and the better the verified reliability of the temperature sensor chip.

[0106] The present invention provides a reliability design and verification device for a high-precision temperature sensor chip. The design includes: obtaining the SARM model (Sensylink Accelerated Reliabity Model) through reliability modeling. Compared with the Weibull distribution, this model can more accurately and scientifically evaluate the reliability of high-precision temperature sensor chips. The verification scheme is designed as a modified version of the high-low temperature static discharge operating life test (HLTESDOL). Compared with the traditional HTOL test, the number of samples required is reduced, the test time is greatly shortened, and the accuracy is high. The analog-to-digital conversion and high-voltage impact device for high-frequency temperature readings can also greatly improve the experimental acceleration efficiency.

[0107] The present invention establishes a SARM model for high-precision temperature sensor chips to evaluate their reliability; designs an improved version of the high-low temperature static discharge operating life test (HLTESDOL) to verify the chip reliability; and utilizes analog-to-digital conversion when reading temperature at high frequency and a high-voltage impact device to accelerate the experiment.

[0108] The SARM model acceleration factor is related to the temperature and voltage of the accelerated test, the analog-to-digital conversion frequency when reading the temperature, and the high-voltage shock frequency. By incorporating these acceleration factors into the SARM model, the failure rate λ is calculated, which in turn translates to the chip's operating life.

[0109] The improved high and low temperature static discharge life cycle reliability verification scheme is conducted through alternating cycles of high temperature (100°C / 125°C / 150°C) low voltage (1.5V / 2.0V / 2.5V) tests and low temperature (-75°C / -50°C / -25°C) high voltage (5.0V / 5.5V / 6.0V) tests. During the improved high and low temperature static discharge life cycle reliability verification scheme, the chip is subjected to high-frequency analog-to-digital conversion when reading temperature. During the improved high and low temperature static discharge life cycle reliability verification scheme, the chip is subjected to a high-voltage shock similar to an ESD test after each analog-to-digital conversion during the temperature reading.

[0110] Improved high and low temperature static discharge working life test reliability verification program, before the test the temperature accuracy of the chip T AC , conversion current I CON , conversion time T CON , Standby current I STB , OTP register value, leakage current LKG and other key parameters are tested and compared (functional test and ATE test are combined). Once a test failure occurs or the drift before and after exceeds a certain percentage, the verification is judged to be Fail, otherwise the verification is Pass.

[0111] The verification device uses a special burn-in board to send continuous pulses to the chip to perform analog-to-digital conversions (intervals of 10ms / 15ms / 20ms / 25ms) during high-frequency temperature readings, accelerating the experiment. The verification device also accelerates the experiment by applying a high-voltage pulse to the chip after each analog-to-digital conversion (intervals of 10ms / 15ms / 20ms / 25ms).

[0112] Those skilled in the art will appreciate that, in addition to implementing the system and its various devices, modules, and units provided by the present invention in purely computer-readable program code, it is entirely possible to implement the same functions of the system and its various devices, modules, and units provided by the present invention in the form of logic gates, switches, application-specific integrated circuits, programmable logic controllers, and embedded microcontrollers by logically programming the method steps. Therefore, the system and its various devices, modules, and units provided by the present invention can be considered a hardware component, and the devices, modules, and units included therein for implementing various functions can also be considered as structures within the hardware component; the devices, modules, and units for implementing various functions can also be considered as both software modules implementing the method and structures within the hardware component.

[0113] The above describes specific embodiments of the present invention. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art may make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. The embodiments of this application and the features in the embodiments may be combined with each other in any manner unless there is a conflict.

Claims

1. A reliability verification method for a temperature sensor chip, characterized in that: A reliability verification device using a temperature sensor chip includes the following steps: Improved experimental steps: verify the temperature sensor chip through high and low temperature static discharge working life test, and obtain the number of tested samples that pass the verification; Failure rate calculation steps: Use the number of verified test samples combined with the accelerated reliability model to calculate the failure rate of the temperature sensor chip; Evaluation steps: Verify the reliability of the temperature sensor chip through failure rate; The verification method also includes the steps of establishing an accelerated reliability model: The Arrhenius formula accelerated reaction model is as follows: Among them, AF T represents the Arrhenius temperature acceleration factor; E a represents activation energy; k represents the Boltzmann constant; T u Indicates the temperature under daily use conditions; T a Indicates the temperature under accelerated conditions; Build an accelerated reliability model: Among them, x 2 represents chi-square test; α represents chi-square equation confidence interval; dF represents degrees of freedom; A(T a ) represents the acceleration factor related to temperature; B(V cc ) represents the acceleration factor related to voltage; C(f T ) represents the acceleration factor related to the analog-to-digital conversion frequency when reading temperature; D(f V ) represents the acceleration factor related to the voltage surge frequency; ss represents the number of samples; FIT is equivalent to the unit of measurement of failure rate, and its plural form is FTIs; The reliability verification device of the temperature sensor chip includes a temperature conversion module, a voltage impact module, a high and low voltage control system, and a high and low temperature control system; The high and low temperature control system controls the ambient temperature of the temperature sensor chip; The temperature conversion module performs analog-to-digital conversion when reading the temperature from the temperature sensor chip; The high and low voltage control system controls the ambient voltage of the temperature sensor chip; The voltage shock module performs voltage shock on the temperature sensor chip.

2. The reliability verification method of the temperature sensor chip according to claim 1, characterized in that: The improved experimental steps include the following steps: Parameter testing steps before the experiment: prepare a specified batch of samples to be tested and test the key parameters of the temperature sensor chip before the experiment; Experimental steps: the environment of the sample to be tested is subjected to a high-temperature and low-pressure experiment for a first predetermined time and a low-temperature and high-pressure experiment for a second predetermined time alternately; By sending continuous pulses to the temperature sensor chip to perform analog-to-digital conversion when reading the temperature, a voltage shock is applied to the temperature sensor chip after the analog-to-digital conversion; Post-experiment parameter testing steps: Test the key parameters of the temperature sensor chip after the experiment; Sample quantity acquisition step: Compare the test results of key parameters before and after the experiment to obtain the number of samples to be tested that have passed the verification ss.

3. The reliability verification method of the temperature sensor chip according to claim 1, characterized in that: The improved experimental steps also include a patch step: before verification, the temperature sensor chip is patched on a printed circuit board using surface mounting technology to obtain a sample to be tested.

4. The reliability verification method of the temperature sensor chip according to claim 2, characterized in that: The improved experimental step also includes repeating the experimental step: repeating the cycle of the experimental step.

5. The reliability verification method of the temperature sensor chip according to claim 2, characterized in that: In the sample quantity acquisition step, if the test of the sample fails or the front-to-back drift exceeds a predetermined percentage, the verification is determined to have failed; otherwise, the verification is passed.

6. The reliability verification method of a temperature sensor chip according to claim 2, wherein: In the improved experimental steps, the key parameters include the temperature accuracy T of the temperature sensor chip AC , conversion current I CON , conversion time T CON , Standby current I STB , register values and leakage current LKG.

7. The reliability verification method of a temperature sensor chip according to claim 2, characterized in that: In the experimental steps, high temperature includes 100°C, 125°C or 150°C, low voltage includes 1.5V, 2.0V or 2.5V, low temperature includes -75°C, -50°C or -25°C, and high voltage includes 5.0V, 5.5V or 6.0V.

8. The reliability verification method of a temperature sensor chip according to claim 1, wherein: The temperature conversion module is connected to the aging circuit board; The temperature sensor chip is mounted on a printed circuit board using surface mount technology. Aging circuit boards connect printed circuit boards; The voltage shock module includes an electrostatic discharge voltage shock module, and the electrostatic discharge voltage shock module is connected to the printed circuit board.

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