Wafer inspection system

Abstract

The present invention relates to a wafer detection system, which includes a carrying device and a point detection device. The carrying device includes an electrically conductive carrying part and a contact part, and is used for the back side of the wafer to be placed on the carrying part. The point detection device includes a probe and a plurality of elastic contact members. When the point contact end of the probe touches the front side of the wafer, the contact end of the elastic contact member abuts against the contact surface of the contact part of the carrying device; the contact end of the elastic contact member is higher than the point contact end of the probe, and the contact surface of the carrying device is higher than the front side of the wafer; or, the contact surface radius is greater than or equal to twice the wafer radius, and the horizontal distance between the point contact end of the probe and the contact end of the elastic contact member is greater than or equal to twice the wafer radius; in this way, the test requirements of short pulse test signals can be met, and the structural design and transmission stability of the elastic contact member can avoid being affected by the detection temperature.

Description

Technical Field

[0001] The present invention relates to a wafer detection system, in particular to a wafer detection system in which an elastic contact piece for conducting with a negative electrode of a wafer is provided on the periphery of a probe of a spot detection device. Background Art

[0002] See also Figure 1 Conventional vertical dies have positive and negative contacts on their front and back surfaces, respectively. For example, back surface 12 of wafer 11 can serve as a common planar negative contact for all dies on wafer 11. Vertical dies are typically light-emitting dies, such as VCSELs, micro LEDs, and mini LEDs, where the light-emitting portion is located on front surface 13 of wafer 11. For the aforementioned vertical die spot testing, a probe 15 of a spot testing device 14 (such as a probe card or edge finder) is typically used to touch the positive electrode of the die (i.e., the front side of the wafer). A driver IC 16 is electrically connected to the spot testing device 14 via a cable 17. The wafer 11 is supported by a conductive carrier 19, and the driver IC 16 is also electrically connected to the carrier 19 via a cable 18 to form a test loop. This allows the test signal output by the driver IC 16 to be transmitted to the positive electrode of the die via the cable 17 and the spot testing device 14, and then returned to the driver IC 16 from the negative electrode of the die (i.e., the back side of the wafer) via the carrier 19 and the cable 18. In this way, the light-emitting portion of the front side of the die emits light, which is then received by a light-receiving device (not shown in the figure, such as an integrating sphere) located above the spot testing device 14 to measure the optical properties of the die.

[0003] However, the test signal transmission method adopted by the aforementioned detection system, that is, the test signal is output from the driver chip 16 and then returned to the driver chip 16 via cables 17 and 18. In addition to the material of cables 17 and 18 affecting the test signal they transmit, the long transmission path is also susceptible to inductance effects, causing the waveform of the short-pulse, high-current test signal to be severely deformed and distorted, thereby causing inaccurate or even invalid detection. Therefore, the aforementioned detection system cannot meet the testing requirements of short-pulse test signals.

[0004] To address the above-mentioned problem, Taiwan Patent No. M603962 discloses another detection system, which eliminates the cable (such as the cable between the wafer carrier unit (wafer carrier) and the driver chip. Figure 1Cable 18 in the wafer carrier is provided with a plurality of upwardly protruding conductive units on the wafer carrier, so that the positive contact of the driver chip is electrically connected to the probe, and the negative contact of the driver chip is electrically connected to the conductive portion on the bottom surface of the testing device. When the probe touches the positive electrode of the wafer, the conductive portion of the testing device also contacts and conducts with the conductive unit on the wafer carrier, thereby forming a test loop with a shorter path and meeting the test requirements of short pulse test signals. Summary of the Invention

[0005] However, in the case of detecting the die under specific temperature conditions, the temperature of the aforementioned carrier unit that carries the wafer will be adjusted by a temperature control device, that is, the carrier unit may be heated up or cooled down. Therefore, the conduction unit provided on the carrier unit will be easily affected by the temperature of the carrier unit, such as thermal expansion and contraction. In order to cope with this situation, the design of the conduction unit will be more complicated (for example, a heat insulating member will be provided) and the cost will be higher. Alternatively, the influence of the thermal expansion and contraction of the aforementioned temperature will make the movement of the conduction unit unstable, resulting in difficulty in controlling the contact stability, thereby affecting the stability of the transmitted test signal. In addition, the aforementioned point measurement process usually uses the carrier unit to move the wafer upward so that the die is touched by the probe, and the conduction unit is usually an elastic contact piece (pogo pin) provided with a spring and a contact head. In order for the spring to support the weight of the contact head and to elastically push against the contact head so that the contact head and the conductive part of the point measurement device have good contact to provide a stable test signal, the spring coefficient (K value) of the conduction unit will be set higher, which will make the load of the up and down movement of the carrier unit larger, especially when the number of conduction units is large. Furthermore, as in the aforementioned patent, Figure 10 As shown (the following related element symbols correspond to the labels in the drawings of this patent), when the outermost die of the wafer is touched by the probe, the conductive unit 210 abuts the innermost side of the conductive portion 320 of the testing device. When the wafer is placed slightly off-position (for example, when the wafer is placed slightly to the left), in order to touch the outermost (leftmost) die of the wafer, the detection portion 310 may move to the edge of the conductive portion 320 located between the conductive portion 320 and the probe (detection portion 310), resulting in partial contact of a single conductive unit 210, or even non-contact of some conductive units 210, resulting in insufficient contact area, affecting the stability of the transmitted test signal.

[0006] In view of the above problems, the main object of the present invention is to provide a wafer inspection system that can meet the testing requirements of short pulse test signals, and the design of components transmitting the test signals and the transmission stability can avoid being affected by the inspection temperature.

[0007] To achieve the above-mentioned purpose, the present invention provides a wafer detection system, which can define a vertical axis and a horizontal axis perpendicular to the vertical axis, and is characterized in that the wafer detection system includes: a carrying device, including a carrying part, and a contact part located outside the carrying part, the carrying part and the contact part are conductive and electrically connected to each other, so that a wafer with one back side placed on the carrying part is electrically connected to the contact part; a point detection device, which can be relatively moved with the carrying device along the vertical axis and the horizontal axis and is arranged above the carrying part and the contact part, and the point detection device can be electrically connected to a driver chip and transmit the test signal of the driver chip, the point detection device includes a point detection area, and a contact area located outside the point detection area, the point detection area includes a point detection area that can A conductive probe protruding downward toward the carrier device is used to touch a front side of the wafer, the contact area includes a conductive module, and the conductive module includes a plurality of elastic contact members protruding toward the carrier device. When the probe touches the front side of the wafer, the conductive module and the contact portion of the carrier device abut against each other to form a test circuit; wherein, the probe of the testing device has a contact end for touching the wafer, each of the elastic contact members has a contact end for abutting the contact portion of the carrier device, and the contact portion of the carrier device has a contact surface for abutting the contact end of the elastic contact member, the contact end of each elastic contact member is higher than the contact end of the probe at a height position on the vertical axis, and the contact surface of the carrier device is higher than the front side of the wafer at a height position on the vertical axis.

[0008] The height difference between the contact end of each elastic contact member and the contact end of the probe on the vertical axis is less than or equal to the height difference between the contact surface of the carrier device and the front surface of the wafer on the vertical axis.

[0009] To achieve the above-mentioned purpose, the present invention also provides another technical solution: a wafer detection system, which can define a vertical axis and a horizontal axis perpendicular to the vertical axis, and is characterized in that the wafer detection system includes: a carrying device, including a carrying part, and a contact part located outside the carrying part, the carrying part and the contact part are conductive and electrically connected to each other, and are used for a wafer to be placed on the carrying part with its back side and electrically connected to the contact part; a point detection device, which can be relatively moved with the carrying device along the vertical axis and the horizontal axis and is arranged above the carrying part and the contact part, and the point detection device can be electrically connected to a driver chip and transmit the test signal of the driver chip, the point detection device includes a point detection area, and a contact area located outside the point detection area, the point detection area includes a conductive and protruding downward toward the carrying device. A probe is used to touch a front side of the wafer, the contact area includes a conductive module, the conductive module includes a plurality of elastic contact members protruding toward the carrier device, when the probe touches the front side of the wafer, the conductive module and the contact portion of the carrier device abut against each other to form a test circuit; wherein the outer periphery of the wafer can define a first radius, each of the elastic contact members has a contact end for abutting the contact portion of the carrier device, the contact portion of the carrier device has a contact surface for abutting the contact end of the elastic contact member, the outer periphery of the contact surface can define a second radius, the second radius is greater than or equal to twice the first radius, the probe has a contact end for touching the wafer, and the horizontal distance between the contact end of the probe and the contact end of the elastic contact member most adjacent to it on the horizontal axis is greater than or equal to twice the first radius.

[0010] In the technical solution of the present invention, the horizontal distance between the point contact end of the probe and the contact end of the most adjacent elastic contact member on the horizontal axis is less than or equal to the second radius.

[0011] The contact end of each elastic contact piece is lower than the contact end of the probe at a height position of the vertical axis.

[0012] The height difference between the contact end of each elastic contact piece and the contact end of the probe on the vertical axis is greater than or equal to the height difference between the contact surface of the carrier device and the front surface of the wafer on the vertical axis.

[0013] The point measuring device includes a substrate, a lower surface of which faces the carrying device, the probe and each elastic contact member are arranged on the lower surface of the substrate, and when the probe touches the front surface of the wafer, at least one elastic contact member abuts against the contact portion of the carrying device.

[0014] The point measuring device includes a substrate and a mounting member arranged on the outer periphery of the substrate, a lower surface of the substrate and a lower surface of the mounting member face the carrying device, the probe is arranged on the lower surface of the substrate, and each of the elastic contact members is arranged on the lower surface of the mounting member. When the probe touches the front side of the wafer, at least one of the elastic contact members abuts against the contact portion of the carrying device.

[0015] The point measuring device includes a substrate and a mounting member that is separately arranged on the periphery of the substrate from the substrate. A lower surface of the substrate and a lower surface of the mounting member face the carrying device. The probe is arranged on the lower surface of the substrate. Each of the elastic contact members is arranged on the lower surface of the mounting member. When the probe touches the front side of the wafer, at least one of the elastic contact members abuts against the contact portion of the carrying device.

[0016] The carrying device includes a carrying platform having the contact portion and the carrying portion, so that the wafer is directly placed on the carrying platform.

[0017] The supporting platform includes a main body and a heightening plate fixed to the main body. The supporting portion is formed by the main body. The heightening plate is in a hollow ring shape and forms the contact portion.

[0018] The carrying device includes a carrying platform with the contact portion and a carrying tray with the carrying portion, and the wafer is arranged on the carrying tray and placed on the carrying platform together with the carrying tray.

[0019] The supporting platform includes a body and a heightening plate fixed to the body. The supporting disc is placed on the body. The heightening plate is in a hollow ring shape and forms the contact portion.

[0020] The carrying device includes a carrying platform and a carrying tray having the contact portion and the carrying portion, and the wafer is arranged on the carrying tray and placed on the carrying platform together with the carrying tray.

[0021] Each of the elastic contact members is arranged on two opposite sides of the probe with the probe as the center.

[0022] The elastic contact members are symmetrically arranged on two opposite sides of the probe.

[0023] The point measuring device further includes a substrate. The driving chip is arranged on the substrate and is electrically connected to the probes and each of the elastic contact members through an internal circuit of the substrate.

[0024] The test signal output by the driver chip is transmitted to the front side of the wafer by the probe through the test circuit, and then returns to the driver chip from the back side of the wafer through the carrying portion of the carrying device, the contact portion and the conductive module of the point test device in sequence.

[0025] With the wafer inspection system of the present invention, when a probe touches a die on a wafer, a test signal output by the driver chip is transmitted via the probe to the die's positive electrode. From the die's negative electrode, the signal is then transmitted sequentially through the carrier device's support portion, contact portion, and conductive module of the probe device, returning to the driver chip. In other words, the signal is transmitted via the carrier device's contact portion and the probe device's elastic contact, eliminating the need for a signal transmission cable between the carrier device and the driver chip. This shortens the transmission path, meeting the testing requirements for short pulse test signals. Furthermore, the elastic contact is located in the probe device rather than the carrier device, thus avoiding the effects of the test temperature. This results in a simpler structural design, lower costs, and excellent transmission stability. Furthermore, the location of the elastic contact in the probe device rather than the carrier device eliminates the need for the elastic contact's spring to support the weight of the contact head, allowing for a lower spring constant (K value). This allows for the installation of more elastic contacts while avoiding excessive load on the carrier device's vertical movement, thereby improving the stability of the transmitted test signal.

[0026] The technical features of the present invention described above can meet the testing requirements of short pulse test signals, and the design and transmission stability of the components transmitting the test signals can be prevented from being affected by the detection temperature. However, because the elastic contact is located in the testing device, when the probe of the testing device touches the die of the wafer, if further consideration is not given, the elastic contact can easily collide with the die of the wafer, resulting in a limited degree of freedom in the configuration of the elastic contact. More specifically, the elastic contact is located in the testing device and is located at the periphery of the probe. Therefore, when the probe of the testing device touches the outermost (e.g., leftmost) die of the wafer, the elastic contact located on the testing device may collide with the other outermost (e.g., rightmost) die of the wafer. Therefore, to further address the above-mentioned issues, the inventors of this case have worked hard to develop a structure that can prevent the elastic contact from colliding with the object under test when located in the testing device, based on the above-mentioned technical structure of the present invention, and have also proposed the following invention.

[0027] The probe of the spotting device has a contact end for contacting the wafer, and each elastic contact member has a contact end for abutting the contact portion of the carrier device. The contact portion of the carrier device has a contact surface for abutting the contact end of the elastic contact member. The contact end of each elastic contact member is located at a height higher than the contact end of the probe along the vertical axis, and the contact surface of the carrier device is located at a height higher than the front surface of the wafer along the vertical axis.

[0028] Therefore, the point measuring device in the present invention has a height difference design, that is, the contact end of the elastic contact member is higher than the point contact end of the probe, and the supporting device also has a height difference design, that is, the contact portion is higher than the supporting portion, so that the contact surface is higher than the front of the wafer. In this way, when the probe touches the front of the wafer, the contact surface is higher than the front of the wafer and can be abutted by the elastic contact member whose position corresponds to the contact surface, and the remaining elastic contact members that do not abut the contact surface will be higher than the front of the wafer because their contact ends are higher than the point contact end of the probe, thereby avoiding collision with the wafer. Preferably, the height difference between the contact end of each elastic contact member and the point contact end of the probe on the vertical axis is less than or equal to the height difference between the contact surface of the supporting device and the front of the wafer on the vertical axis, so as to ensure that the elastic contact member can actually abut against the contact surface when the probe touches the wafer.

[0029] For example, the carrier device may include a carrier platform having the contact portion and the carrying portion, for the wafer to be placed directly on the carrier platform. Alternatively, the carrier device may include a carrier platform and a carrier plate, for the wafer to be placed on the carrier plate and placed on the carrier platform together with the carrier plate, and the carrier platform and the carrier plate may respectively have the contact portion and the carrying portion. That is, in the above two forms, the carrier platform has the above-mentioned height difference design. Alternatively, the carrier plate may have both the contact portion and the carrying portion, and then the conventional platform-shaped carrier platform may be directly used.

[0030] Alternatively, the present invention may also adopt a horizontal distance design to avoid the aforementioned problem of collision between the elastic contact member and the wafer. Specifically, the outer periphery of the wafer can define a first radius, and the outer periphery of the contact surface can define a second radius, the second radius being greater than or equal to twice the first radius, and the horizontal distance between the contact end of the probe and the contact end of its most adjacent elastic contact member on the horizontal axis is greater than or equal to twice the first radius. Thus, when the probe touches any position on the front of the wafer, the contact end of the elastic contact member will be outside the range of the wafer, thus preventing the elastic contact member from colliding with the wafer. Preferably, the horizontal distance between the contact end of the probe and the contact end of its most adjacent elastic contact member on the horizontal axis is less than or equal to the second radius, to ensure that at least one of the elastic contact members will abut against the contact surface when the probe touches the wafer. In addition, the contact end of each of the elastic contact members can be lower than the point contact end of the probe at the height position of the vertical axis. In this form, the supporting device does not need to have a height difference design, that is, the contact surface of the contact part and the surface of the supporting part for supporting the wafer can be on the same plane, and the front side of the wafer will only be slightly higher than the contact surface of the contact part. The height difference is the thickness of the wafer. Therefore, the height difference between the contact end of the elastic contact member and the point contact end of the probe only needs to be greater than or equal to the thickness of the wafer. Such a design is relatively simple.

[0031] Regardless of whether the point-to-point measuring device has the aforementioned height difference or horizontal distance, its elastic contact members can be provided on the same substrate as the probes (e.g., the circuit substrate of the aforementioned probe card). This design is relatively simple and has a higher degree of component integration. Alternatively, the elastic contact members can be provided on another mounting member, which can be a circuit board and is provided on the outer periphery of the substrate by snap-fitting or other means, or the mounting member can be a metal plate (cathode plate) serving as a cathode and is provided on the periphery of the substrate in a manner fixed relative to and separated from the substrate. This method allows the use of existing point-to-point measuring devices by simply installing mounting members provided with the elastic contact members. In other words, such designs have greater assembly flexibility and higher adaptability.

[0032] Preferably, each of the contact members can be arranged on two opposite sides of the probe with the probe as the center. More preferably, each of the elastic contact members can be arranged symmetrically on two opposite sides of the probe.

[0033] Preferably, the point measuring device includes a substrate. The driving chip can be disposed on the substrate and electrically connected to the probes and each of the elastic contact elements through an internal circuit of the substrate.

[0034] Preferably, the test signal output by the driver chip is transmitted to the front side of the wafer by the probe through the test loop, and then returns to the driver chip from the back side of the wafer through the carrying portion of the carrying device, the contact portion and the conductive module of the point test device in sequence.

[0035] The detailed structure, features, assembly, and usage of the wafer inspection system provided by the present invention will be described in the detailed description of the embodiments that follow. However, those skilled in the art will appreciate that these detailed descriptions and the specific embodiments listed for implementing the present invention are intended only to illustrate the present invention and are not intended to limit the scope of patent protection for the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is a schematic diagram of a conventional wafer inspection system and a wafer;

[0037] Figure 2 is a schematic diagram of a wafer inspection system and a wafer provided by a first preferred embodiment of the present invention;

[0038] Figure 3 and Figure 4 Similar to Figure 2 , showing the status of wafer detection system spot test wafer;

[0039] Figure 5 and Figure 6 Similar to Figure 2 , showing other forms of a carrier device of a wafer inspection system;

[0040] Figure 7 is a schematic diagram of a wafer inspection system and a wafer provided by a second preferred embodiment of the present invention;

[0041] Figure 8 and Figure 9 Similar to Figure 7 , showing the status of wafer detection system spot test wafer;

[0042] Figure 10 and Figure 11 It is a schematic diagram of another form of the one-point detection device of the wafer inspection system of the present invention. DETAILED DESCRIPTION

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present invention.

[0044] The applicant first explains that in the embodiments and drawings to be introduced below, the same reference numbers represent the same or similar elements or structural features. It should be noted that the elements and structures in the drawings are for illustrative purposes only and are not drawn according to actual proportions and quantities. Moreover, if practically possible, the features of different embodiments can be applied interchangeably. Secondly, when it is mentioned that one element is disposed on another element, it means that the aforementioned element is directly disposed on the other element, or the aforementioned element is indirectly disposed on the other element, that is, one or more other elements are disposed between the two elements. When it is mentioned that an element is "directly" disposed on another element, it means that no other elements are disposed between the two elements.

[0045] like Figure 2 As shown, a wafer inspection system 20 provided in a first preferred embodiment of the present invention mainly includes a carrier device 30 and a point detection device 40 .

[0046] The carrier 30 and the spotting device 40 are capable of relative movement along a vertical axis (Z-axis) and two horizontal axes (X-axis and Y-axis). For example, in this embodiment, the spotting device 40 is stationary, while the carrier 30 is mounted on a movable device 52 and is driven by the movable device 52 to move along the X, Y, and Z axes. The carrier 30 is used to support a wafer 60, which contains a plurality of relatively small vertical dies. To simplify the diagram, the dies of the wafer 60 are not shown in the present invention. The positive contact of each die is located on the front surface 62 of the wafer 60. In this embodiment, the front surface 62 of the wafer 60 is the upper surface of the wafer 60 facing the spotting device 40. The back surface 63 of the wafer 60 is the common planar negative contact for each die. The spotting device 40 is used to spot each die. In this embodiment, the vertical axis (Z-axis) is the axis of motion that causes the probe 42 of the spotting device 40 to contact the wafer 60 during testing, as described in detail below.

[0047] The carrier device 30 of this embodiment comprises only a carrier platform 31 (chuck) mounted on a movable device 52. The wafer 60 is placed directly onto the carrier platform 31 by a pick-and-place device (not shown). Specifically, the carrier platform 31 of this embodiment comprises a platform-shaped body 312 and a raised plate 314 fixed to the body 312. The raised plate 314 is annular and disposed along the periphery of the body 312, forming a contact portion 32 of the carrier device 30. The portion of the body 312 not covered by the raised plate 314 forms a carrier portion 33 of the carrier device 30, i.e., the contact portion 32 is located outside the carrier portion 33. Both the body 312 and the raised plate 314 of the carrier platform 31 are made of a conductive material (e.g., metal). Therefore, the carrier portion 33 and the contact portion 32 of the carrier device 30 are both conductive and electrically connected to each other. The back surface 63 of the wafer 60 is disposed on the carrier portion 33 and is electrically connected to the contact portion 32. It is worth mentioning that a conventional platform-shaped support platform can be used as the main body 312, and then a heightening plate 314 is installed to form the support platform 31 of this embodiment. Alternatively, the main body 312 and the heightening plate 314 of the support platform 31 can also be integrally formed.

[0048] The point measuring device 40 of this embodiment mainly includes a substrate 41, a plurality of conductive probes 42, and a plurality of conductive elastic contacts 43. The point measuring device 40 can be a probe card. The substrate 41 is the circuit substrate of the probe card, and a fixing block 44 made of black glue is fixed on its lower surface 412. The probes 42 are arranged in two rows (the same row is arranged along the Y axis) and are fixed to the lower surface 412 of the substrate 41 by the fixing block 44. One end of the probe 42 is a contact end 422 (described in detail below), and the other end is electrically connected to the substrate 41. The elastic contacts 43 are arranged on opposite sides of the probe 42 with the probe 42 as the center. Specifically, the elastic contacts 43 are arranged in three rows on both sides of the probe 42 (the same row is arranged along the Y axis) and are directly welded and fixed to the lower surface 412 of the substrate 41. Preferably, the elastic contacts 43 are symmetrically arranged on opposite sides of the probe 42. As a result, the spotting device 40 forms a spotting area 45 including the probes 42 and a contact area 46 located outside the spotting area 45 and including the elastic contact members 43 .

[0049] The resilient contact member 43 of the present invention can be a conventional vertical spring probe (pogo pin), with a spring disposed within a metal housing. The vertical spring probe further comprises a top rod slidably mounted within the metal housing. One end of the top rod is located within the metal housing and abuts the spring, while the other end of the top rod protrudes from the metal housing and forms a contact head. When the contact head abuts the contact portion 32, the spring is compressed and elastically compressed. The probe 42 of the present invention is not limited to the cantilever probe employed in this embodiment; for example, it can also be a conventional vertical spring probe (similar to the resilient contact member 43). The number and arrangement of the probes 42 are not limited to those provided in this embodiment; as long as there is at least one probe 42, the number and arrangement of the resilient contact members 43 are also not limited to those provided in this embodiment; as long as there are multiple resilient contact members 43 disposed at predetermined locations around the periphery of the probe 42, the number of resilient contact members 43 can be arranged in one, two, three, four, or other rows on either side of the probe 42. The number of rows is not limited and can be adjusted to meet the needs of different configurations.

[0050] The spot testing device 40 is positioned with the lower surface 412 of the substrate 41 facing the carrier 30 and is fixed by a fixing device (not shown) to be disposed above the carrier portion 33 and the contact portion 32 of the carrier 30. Therefore, the elastic contact member 43 is disposed to protrude downward from the lower surface 412 of the substrate 41. Specifically, the probe 42 and the elastic contact member 43 generally protrude from the lower surface 412 of the substrate 41 toward the carrier 30 from top to bottom. The lowermost end of the probe 42 is a contact end 422 for contacting the wafer 60, and the lowermost end of the elastic contact member 43 is a contact end 432 for abutting the contact portion 32 of the carrier 30. The spot testing device 40 is used to transmit test signals between a driver chip 54 and the wafer 60. The driver chip 54 can be directly fixed to the substrate 41 of the spot testing device 40 and electrically connected to the probe 42 and the elastic contact member 43 respectively through the internal circuit of the substrate 41 or external wires. More specifically, the probes 42 are individually electrically connected to the positive contact of the driver chip 54, while the resilient contacts 43 can be connected in series or in parallel and then collectively electrically connected to the negative contact of the driver chip 54. In other words, the resilient contacts 43 of the probe device 40 collectively form a conductive module 47. As long as at least one of the resilient contacts 43 is electrically connected to the negative electrode (back surface 63) of the wafer 60 through the carrier device 30, the negative electrode of the wafer 60 can be electrically connected to the negative contact of the driver chip 54.

[0051] In addition to the aforementioned structure, the structural feature of this embodiment is that the contact end 432 of the elastic contact member 43 is higher than the contact end 422 of the probe 42 at a height position on the vertical axis (Z axis), and the height difference is H1. In addition, the contact portion 32 of the carrier device 30 has a contact surface 322 for the contact end 432 of the elastic contact member 43 to abut. The contact surface 322 is higher than the front surface 62 of the wafer 60 at a height position on the vertical axis (Z axis), and the height difference is H2. It is better to design the height difference H1 to be less than or equal to the height difference H2 to ensure that the elastic contact member 43 can actually abut against the contact surface 322 when the probe 42 touches the wafer 60, as described below.

[0052] When the probe 42 touches the die in the central area of ​​the wafer 60, as shown in FIG. Figure 3 As shown, the two rows of elastic contact members 43 closest to the probes 42 abut against the contact surface 322 of the contact portion 32 of the carrier device 30. At this time, the test signal output by the positive contact of the driver chip 54 can be transmitted to the positive contact of the chip it touches through the probe 42, and then transmitted back from the negative contact on the back side 63 of the wafer through the carrier portion 33, the contact portion 32 and the elastic contact members 43 of the carrier device 30 to the negative contact of the driver chip 54, that is, forming a circuit as shown in FIG. Figure 3 Specifically, in this embodiment, the test loop 22 does not pass through the moving device 52. For example, in the case where the probe 42 touches the outermost die of the wafer 60, Figure 4 When the middle probe 42 touches the rightmost die of the wafer 60, the leftmost elastic contact member 43 abuts against the contact surface 322 of the contact portion 32 of the carrier device 30, and a similar Figure 4 The test loop 22 is shown. Specifically, in this embodiment, the test loop 22 does not pass through the moving device 52. Although a portion of the elastic contact member 43 on the left side of the probe 42 is located within the range of the wafer 60, the contact end 432 of the elastic contact member 43 is higher than the contact end 422 of the probe 42. Therefore, at this time, it is necessarily higher than the front surface 62 of the wafer 60 to avoid colliding with the wafer 60. Similarly, when the probe 42 touches the leftmost die on the wafer 60, the rightmost elastic contact member 43 can also abut against the contact surface 322 to form the test loop 22, and the elastic contact member 43 on the right side of the probe 42 located within the range of the wafer 60 can avoid colliding with the wafer 60.

[0053] Therefore, the present invention does not require a signal transmission cable between the carrier device 30 and the driver chip 54. Even in the form where the driver chip 54 is directly fixed to the substrate 41 of the point measuring device 40 as in the present embodiment, a signal transmission cable is not required between the point measuring device 40 and the driver chip 54. Therefore, the path of the test loop 22 formed by the present invention is short, thereby further meeting the testing requirements of short pulse test signals. Moreover, under the testing requirements that the carrier device 30 needs to be heated or cooled by a temperature control device (not shown in the figure), the elastic contact member 43 can avoid being directly affected by the temperature of the carrier device 30. Therefore, the elastic contact member 43 does not need to be provided with a heat insulation member or other temperature-adaptive structure, making its structural design simpler and lower in cost, and can produce good transmission stability. Furthermore, the resilient contact member 43 is located on the point-testing device 40 rather than the supporting device 30. This eliminates the need for the spring of the resilient contact member 43 to support the weight of the contact head, thereby allowing the spring resistance to be set lower. This allows the present invention to include more resilient contact members 43 while avoiding excessive load on the upward and downward movement of the supporting device 30, thereby improving the stability of the transmitted test signal.

[0054] Further reading Figure 3 The contact end 422 of the probe 42 and the contact end 432 of the most adjacent elastic contact member 43 can define a horizontal distance d1 on the horizontal axis (eg, X axis). The center point of the wafer 60 to a contact point on the contact surface 322 (eg, Figure 3 The point where the middle contact end 432 contacts can define a horizontal distance D1 on the horizontal axis (eg, X axis). The horizontal distance d1 is less than or equal to the horizontal distance D1, and preferably, d1 is set equal to D1. Figure 4The contact end 422 of the probe 42 and the contact end 432 of the elastic contact member 43 that is farthest away from it can define a horizontal distance d2 on the horizontal axis (e.g., the X axis). The contact point (e.g., Figure 4 The point where the contact end 432 contacts the wafer 60 can define a horizontal distance D2 on the horizontal axis (e.g., the X-axis). Preferably, d2 is set equal to D2. This ensures that when the probe 42 performs point measurement on the die at any point measurement position on the wafer 60, the contact end 432 of at least one elastic contact member 43 can abut against the contact surface 322. In this embodiment, the elastic contact member 43 closest to the point measurement end 422 of the probe 42 is the one with the smallest distance between the point measurement end 422 of the probe 42 and the contact end 432 of the elastic contact member 43 on the horizontal axis (e.g., the X-axis). Furthermore, with the point measurement end 422 of the probe 42 as the center of a circle, the distance between the point measurement end 422 of the probe 42 and the contact end 432 of the elastic contact member 43 is a radius around the center of the circle.

[0055] like Figure 5 and Figure 6 As shown, the carrying device 30 of the present invention not only includes a carrying platform 31, but also may include a carrier 34. The carrier 34 is used to carry the wafer 60 to be tested. When the wafer 60 is to be tested, the pick-and-place device drives the carrier 34 so that the wafer 60 is placed on the carrying platform 31 together with the carrier 34. Figure 5 The supporting platform 31 shown is as Figure 2 As shown, it has the contact portion 32 as described above, except that Figure 5 The contact portion 32 extends higher so that H2 ≥ H1, that is, the thickness of the carrier plate 34 is set to be thinner, that is, the height in the vertical axis direction is set to be lower than the contact surface 322. The carrier plate 34 has the aforementioned carrier portion 33, and the carrier plate 34 is made of a conductive material so that the carrier portion 33 and the contact portion 32 are electrically conductive. In this embodiment, a hollow annular member (that is, the aforementioned raising plate 314) forms the contact portion 32, and is not integrally formed and is arranged on the main body 312 of the carrier platform 31. The carrier plate 34 can also be made as follows Figure 6 The larger configuration shown has both a lower support portion 33 and a higher contact portion 32 to create a height difference H2. The support platform 31 can be a conventional platform-shaped support platform. The support portion 33 of the support tray 34 is designed to be relatively thin, meaning its height in the vertical direction is lower than the contact surface 322 of the contact portion 32 of the support tray 34. In this embodiment, the support portion 33 and contact portion 32 of the support tray 34 are integrally formed.

[0056] Specifically, in the height difference design of the present invention, when the contact end 422 of the probe 42 touches the surface of the wafer 60, the elastic contact member 43 has already abutted the contact surface 322 and has been compressed a small distance. At this time, the amount of compression of the elastic contact member 43 in the vertical axis (the vertical direction) plus the height difference H1 equals the set value of the height difference H2. At this time, to ensure that the probe 42 and the wafer 60 are in reliable electrical contact, the probe device 40 and the carrier device 30 are further moved closer relative to each other, causing the probe 42 to press further downward on the die. As a result, the probe 42 will slightly elastically deform. At this time, the amount of compression of the elastic contact member 43 in the vertical axis is the aforementioned compression amount plus the amount of elastic deformation of the probe 42 in the vertical axis. This ensures that when the probe 42 touches the wafer 60, the elastic contact member 43 will firmly abut the contact surface 322, effectively forming a stable test circuit 22.

[0057] See also Figure 7 The main difference between the wafer inspection system 20 provided in the second preferred embodiment of the present invention and the aforementioned first preferred embodiment is that the first preferred embodiment prevents the elastic contact member 43 from colliding with the wafer 60 by designing the height difference between the carrier device 30 and the point measuring device 40, while the main structural features of the second preferred embodiment to achieve this effect are the horizontal distance between the point contact end 422 of the probe 42 and the contact end 432 of the elastic contact member 43 on the horizontal axis, and the corresponding size design of the carrier device 30, as detailed below.

[0058] The outer periphery of the wafer 60 can define a first radius r1. The horizontal distance d1 between the contact end 422 of the probe 42 and the contact end 432 of the most adjacent elastic contact member 43 on the horizontal axis (e.g., the X-axis) is greater than or equal to twice the first radius r1, that is, d1 ≥ 2r1. This design ensures that the contact end 432 of the elastic contact member 43 is outside the range of the wafer 60 when the probe 42 touches any position on the wafer 60. Figure 8 and Figure 9 As shown, to avoid the elastic contact member 43 colliding with the wafer 60. Specifically, as Figure 9 As shown, when the probe 42 touches the outermost edge of the wafer 60 (eg Figure 9 When the die is at the rightmost side of the wafer, the elastic contact member 43 (eg the elastic contact member 43 closest to the contact end 422 of the probe 42 in the opposite moving direction) is moved. Figure 9 The elastic contact member 43 on the left side of the wafer 60 can still be maintained outside the outermost edge (eg Figure 9At the same time, to ensure that the contact end 432 of the elastic contact member 43 can abut the contact surface 322 of the carrier device 30, the outer periphery of the contact surface 322 defines a second radius r2 that is greater than or equal to twice the first radius r1, i.e., r2 ≥ 2r1. To further ensure that the contact end 432 of the elastic contact member 43 can abut the contact surface 322 of the carrier device 30, the second radius r2 is preferably greater than the aforementioned horizontal distance d1, but the two can also be equal, i.e., r2 ≥ d1.

[0059] In this embodiment, the contact end 432 of the elastic contact member 43 is slightly lower than the contact end 422 of the probe 42 in the vertical axis (Z axis). Therefore, the carrier device 30 does not need to be designed with a height difference. It can directly adopt a platform-shaped carrier platform 31, whose central block is the carrier portion 33 and the peripheral block is the contact portion 32. The contact surface 322 of the contact portion 32 and the surface of the carrier portion 33 used to support the wafer 60 are on the same plane. Such a structural design is relatively simple. The front surface 62 of the wafer 60 is only slightly higher than the contact surface 322. The height difference is the thickness t of the wafer 60. As long as the height difference H1 between the contact end 432 of the elastic contact member 43 and the contact end 422 of the probe 42 is greater than or equal to the thickness t of the wafer 60, the contact end 432 of the elastic contact member 43 can abut against the contact portion 32 of the carrier device 30 when the probe 42 contacts the wafer 60, thereby forming the test circuit as described above. Specifically, when the contact end 422 of the probe 42 touches the surface of the wafer 60, the elastic contact member 43 has abutted against the contact surface 322 and has been compressed a short distance. At this time, the amount of compression of the elastic contact member 43 on the vertical axis (up and down direction) plus the thickness t of the wafer 60 will be equal to the set value of the height difference H1. At this time, in order to ensure that the probe 42 and the wafer 60 are in electrical contact, the probe device 40 and the carrier device 30 will be further relatively close to each other so that the probe 42 is pressed further down on the grain, so the probe 42 will be slightly elastically deformed. At this time, the amount of compression of the elastic contact member 43 on the vertical axis is the aforementioned compression amount plus the amount of elastic deformation of the probe 42 on the vertical axis. This ensures that when the probe 42 touches the wafer 60, the elastic contact member 43 will actually abut against the contact surface 322 and effectively form a stable test circuit 22. The carrier device 30 of this embodiment may also include the following Figure 5 The area shown is smaller (compared to Figure 6 Specifically, the area of ​​the carrier plate 34 is slightly larger than the wafer 60. The outer diameter of the carrier plate 34 is larger than the outer diameter of the wafer 60, and the outer diameter of the carrier plate 34 is smaller than the outer diameter of the carrier platform 31, so that the carrier device 30 has a contact portion 32 located on the outer periphery of the carrier plate 34. Alternatively, it may include a contact portion 32 similar to the contact portion 32 of the carrier plate 34. Figure 6 The area shown is larger (compared to Figure 5The carrier plate 34 is a carrier plate (a carrier plate). Specifically, the area of ​​the carrier plate 34 is larger than that of the wafer 60. The outer diameter of the carrier plate 34 is larger than that of the wafer 60 and equal to the outer diameter of the carrier platform. Therefore, the central area of ​​the carrier plate 34 serves as the carrier portion 33 of the carrier device 30, and the outer area of ​​the carrier plate 34 serves as the contact portion 32 of the carrier device 30. However, the carrier plate 34 of this embodiment is preferably flat. In other words, the carrier plate 34 has both the carrier portion 33 and the contact portion 32, and the carrier portion 33 and the contact portion 32 are of equal height.

[0060] Regardless of whether the present invention adopts the design of the height difference H1, H2 as in the first preferred embodiment or the design of the horizontal distance d1 as in the second preferred embodiment, the point measuring device 40 can also adopt the form in which the elastic contact member 43 and the probe 42 are separately arranged as follows (e.g. Figure 10 and Figure 11 As shown), just as Figures 2 to 9 The design in which the elastic contact member 43 and the probe 42 are provided on the same substrate 41 has the advantage of a relatively simple structure.

[0061] Compared to Figures 2 to 9 The point measuring device 40 shown, Figure 10 The substrate 41 of the point measuring device 40 shown in the figure is relatively small in area, and its outer periphery is connected to one or more mounting members 48 (such as circuit boards) by snap-fitting or other means. The probe 42 is provided on the lower surface 412 of the substrate 41, and the elastic contact member 43 is provided on the lower surface 482 of the mounting member 48, so as to form a similar Figures 2 to 9 The point detection device 40 shown can achieve the same effect. Figure 11 The point measuring device 40 shown is similar to Figure 10 shown, but Figure 11 The mounting member 49 can be provided on a fixing device (not shown) and fixed relative to the substrate 41 and separated from each other and located on the periphery of the substrate 41. The mounting member 49 can be a metal plate (cathode plate) as a cathode and electrically connected to the negative electrode contact of the driver chip 54 through a wire 50, so as to form a similar Figures 2 to 9 The point detection device 40 shown can achieve the same effect. Figure 10 and Figure 11 The advantage of the point measuring device 40 shown is that the existing point measuring device can be used by simply installing a mounting member 48 or 49 with an elastic contact member 43, and the desired height difference design can be achieved by utilizing the thickness difference between the mounting member 48 and the substrate 41 or the height difference between the mounting member 49 and the substrate 41.

[0062] The wafer inspection system 20 of the present invention can define a vertical axis (Z axis) and a horizontal axis (X axis) perpendicular to the vertical axis. The wafer inspection system 20 includes a carrier device 30 and a point measuring device 40. The carrier device 30 includes a carrier portion 33 and a contact portion 32 located on the periphery of the carrier portion 33. The carrier portion 33 and the contact portion 32 are conductive and electrically connected to each other, and are used for the wafer 60 to be placed on the carrier portion 33 with its back side 63 and electrically connected to the contact portion 32. The point measuring device 40 can be arranged above the carrier portion 33 and the contact portion 32 so as to be movable relative to the carrier device 30 along the vertical axis (Z axis) and the horizontal axis (X axis). The point measuring device 40 can be electrically connected to the driver chip 54 and transmit the test signal of the driver chip 54. The probe device 40 includes a probe area 45 and a contact area 46 located outside the probe area 45. The probe area 45 includes a conductive probe 42 that protrudes toward the carrier 30 and is used to contact the front surface 62 of the wafer 60. The contact area 46 includes a conductive module 47. The conductive module 47 includes a plurality of resilient contact members 43 that protrude toward the carrier 30. When the probe 42 contacts the front surface 62 of the wafer 60, the conductive module 47 abuts against the contact portion 32 of the carrier 30 to form a test loop 22.

[0063] The probe 42 of the spotting device 40 has a contact end 422 for contacting the wafer 60, and each elastic contact member 43 has a contact end 432 for abutting the contact portion 32 of the carrier 30. The contact portion 32 of the carrier 30 has a contact surface 322 for abutting the contact end 432 of the elastic contact member 43. The contact end 432 of each elastic contact member 43 is positioned higher than the contact end 422 of the probe 42 along the vertical axis (Z axis). The contact surface 322 of the carrier 30 is positioned higher than the front surface 62 of the wafer 60 along the vertical axis (Z axis).

[0064] As previously mentioned, to shorten the test signal transmission path and meet the testing requirements of short-pulse test signals, the wafer inspection system 20 of the present invention allows the test signal output by the driver chip 54 to be transmitted via the probe 42 to the positive electrode of the die when the probe 42 contacts the die on the wafer 60. The test signal is then transmitted from the negative electrode of the die through the carrier portion 33 of the carrier 30, the contact portion 32, and the conductive module 47 of the probe device 40, returning to the driver chip 54. In other words, the signal is transmitted through the contact portion 32 of the carrier 30 and the elastic contact member 43 of the probe device 40, eliminating the need for a signal transmission cable between the carrier 30 and the driver chip 54, and the transmitted signal does not need to pass through the movable device 52 below the carrier 30. This results in a shorter transmission path, meeting the testing requirements of short pulse test signals. Furthermore, the resilient contact 43 is located on the point-to-point test device 40 rather than the carrier 30, thereby avoiding the influence of the test temperature when the carrier 30 raises and lowers the temperature of the wafer 60. Consequently, the structural design is simpler, the cost is lower, and good transmission stability is achieved. Furthermore, the resilient contact 43 is located on the point-to-point test device 40 rather than the carrier 30, eliminating the need for the spring of the resilient contact 43 to support the weight of its contact head. Therefore, the spring constant (K value) can be set lower. Thus, even when more resilient contacts 43 are provided to improve the stability of the transmitted test signal, the load caused by the upward and downward movement of the carrier 30 can be avoided, thereby reducing the cost of the wafer inspection system.

[0065] However, while this method can meet the testing requirements for short pulse test signals, and the design and transmission stability of the components transmitting the test signals can be protected from the effects of the test temperature, since the elastic contact member 43 is located within the probing device 40, when the probe 42 of the probing device 40 contacts the die on the wafer 60, simply placing the elastic contact member 43 there without further consideration can easily result in collisions between the elastic contact member 43 and the die on the wafer 60. Specifically, the elastic contact member 43 is located within the probing device 40 and is positioned outside the probe 42. Therefore, when the probe 42 of the probing device 40 contacts the outermost (e.g., leftmost) die on the wafer 60, the elastic contact member 43 located on the probing device 40 may collide with the other outermost (e.g., rightmost) die on the wafer 60.

[0066] In contrast, the point measuring device 40 in the present invention has a height difference design, that is, the contact end 432 of the elastic contact member 43 is higher than the point contact end 422 of the probe 42, and the supporting device 30 also has a height difference design, that is, the contact portion 32 is higher than the supporting portion 33, so that the contact surface 322 is higher than the front surface 62 of the wafer 60. In this way, when the probe 42 touches the front surface 62 of the wafer 60, the contact surface 322 is higher than the front surface 62 of the wafer 60 and can be abutted by the elastic contact member 43 corresponding to the contact surface 322. The remaining elastic contact members 43 that do not abut the contact surface 322 will be higher than the front surface 62 of the wafer 60 because their contact ends 432 are higher than the point contact end 422 of the probe 42, thereby avoiding collision with the wafer 60.

[0067] In this way, a wafer inspection system can be provided that can meet the testing requirements of short pulse test signals while preventing the design of components transmitting the test signals and the transmission stability from being affected by the testing temperature, while also ensuring the configuration freedom of the elastic contact parts to avoid collision with the wafer.

[0068] Preferably, in the wafer inspection system 20 of the present invention, the height difference H1 between the contact end 432 of each elastic contact member 43 and the point contact end 422 of the probe 42 on the vertical axis (Z axis) is less than or equal to the height difference H2 between the contact surface 322 of the carrier device 30 and the front surface 62 of the wafer 60 on the vertical axis (Z axis).

[0069] In this case, it is possible to ensure that the elastic contact member 43 can reliably abut against the contact surface 322 of the carrier device 30 when the probe 42 contacts the wafer 60 , thereby further ensuring the transmission stability of the test signal.

[0070] The wafer inspection system 20 of the present invention can define a vertical axis (Z axis) and a horizontal axis (X axis) perpendicular to the vertical axis (Z axis). The wafer inspection system 20 includes a carrier device 30 and a point measuring device 40. The carrier device 30 includes a carrier portion 33 and a contact portion 32 located outside the carrier portion 33. The carrier portion 33 and the contact portion 32 are conductive and electrically connected to each other, and are used for the wafer 60 to be placed on the carrier portion 33 with its back side 63 and electrically connected to the contact portion 32. The point measuring device 40 can be relatively movable with the carrier device 30 along the vertical axis (Z axis) and the horizontal axis (X axis) and is arranged above the carrier portion 33 and the contact portion 32. The point measuring device 40 can be electrically connected to the driver chip 54 and transmit the test signal of the driver chip 54. The point measuring device 40 includes a point measuring area 45 and a contact area 46 located outside the point measuring area 45. The testing area 45 includes a conductive probe 42 that protrudes toward the carrier 30 and is used to contact the front surface 62 of the wafer 60. The contact area 46 includes a conductive module 47. The conductive module 47 includes a plurality of resilient contact members 43 that protrude toward the carrier 30. When the probe 42 contacts the front surface 62 of the wafer 60, the conductive module 47 and the contact portion 32 of the carrier 30 abut against each other to form a test loop 22.

[0071] The outer periphery of the wafer 60 can define a first radius r1, and each elastic contact member 43 has a contact end 432 for abutting the contact portion 32 of the carrier device 30. The contact portion 32 of the carrier device 30 has a contact surface 322 for abutting the contact end 432 of the elastic contact member 43. The outer periphery of the contact surface 322 can define a second radius r2, and the second radius r2 is greater than or equal to twice the first radius r1. The probe 42 has a contact end 422 for contacting the wafer 60. The horizontal distance d1 between the contact end 422 of the probe 42 and the contact end 432 of the elastic contact member 43 closest to it on the horizontal axis (X axis) is greater than or equal to twice the first radius r1.

[0072] As previously mentioned, to shorten the test signal transmission path and meet the testing requirements of short-pulse test signals, the wafer inspection system 20 of the present invention allows the test signal output by the driver chip 54 to be transmitted via the probe 42 to the positive electrode of the die when the probe 42 contacts the die on the wafer 60. The test signal is then transmitted from the negative electrode of the die through the carrier portion 33 of the carrier 30, the contact portion 32, and the conductive module 47 of the probe device 40, returning to the driver chip 54. In other words, the signal is transmitted through the contact portion 32 of the carrier 30 and the elastic contact member 43 of the probe device 40, eliminating the need for a signal transmission cable between the carrier 30 and the driver chip 54, and the transmitted signal does not need to pass through the movable device 52 below the carrier 30. This results in a shorter transmission path, meeting the testing requirements of short pulse test signals. Furthermore, the resilient contact 43 is located on the point-to-point test device 40 rather than the carrier 30, thereby avoiding the influence of the test temperature when the carrier 30 raises and lowers the temperature of the wafer 60. Consequently, the structural design is simpler, the cost is lower, and good transmission stability is achieved. Furthermore, the resilient contact 43 is located on the point-to-point test device 40 rather than the carrier 30, eliminating the need for the spring of the resilient contact 43 to support the weight of its contact head. Therefore, the spring constant (K value) can be set lower. Thus, even when more resilient contacts 43 are provided to improve the stability of the transmitted test signal, the load caused by the upward and downward movement of the carrier 30 can be avoided, thereby reducing the cost of the wafer inspection system.

[0073] However, while this method can meet the testing requirements of short pulse test signals, and the design and transmission stability of the components transmitting the test signals can be prevented from being affected by the test temperature, since the elastic contact member 43 is located on the probing device 40, when the probe 42 of the probing device 40 contacts the die on the wafer 60, simply placing the elastic contact member 43 there without further consideration can easily cause the elastic contact member 43 to collide with the die on the wafer 60. Specifically, the elastic contact member 43 is located on the probing device 40 and is positioned outside the probe 42. Therefore, when the probe 42 of the probing device 40 contacts the outermost (e.g., leftmost) die on the wafer 60, the elastic contact member 43 on the probing device 40 may collide with the other outermost (e.g., rightmost) die on the wafer 60.

[0074] In contrast, the spotting device 40 of the present invention has a horizontal distance design to prevent the elastic contact member 43 from colliding with the wafer 60. In this case, when the probe 42 touches any position on the front surface 62 of the wafer 60, the contact end 432 of the elastic contact member 43 will be outside the range of the wafer 60, thus preventing the contact end 432 of the elastic contact member 43 from colliding with the wafer 60.

[0075] In this way, a wafer inspection system can be provided that can meet the testing requirements of short pulse test signals while preventing the design of components transmitting the test signals and the transmission stability from being affected by the testing temperature, while also ensuring the configuration freedom of the elastic contact parts to avoid collision with the wafer.

[0076] Preferably, in the wafer inspection system 20 of the present invention, a horizontal distance d1 between the contact end 422 of the probe 42 and the contact end 432 of the most adjacent elastic contact member 43 on the horizontal axis (X axis) is less than or equal to the second radius r2.

[0077] In this case, it is possible to ensure that at least one elastic contact member 43 abuts against the contact surface 322 when the probe 42 contacts the wafer 60 , thereby ensuring the transmission stability of the test signal.

[0078] Preferably, in the wafer inspection system 20 of the present invention, the contact end 432 of each elastic contact member 43 is located at a lower height than the contact end 422 of the probe 42 along the vertical axis (Z axis).

[0079] In this case, the contact end 432 of each elastic contact member 43 can be lower than the contact end 422 of 42 in the vertical axis (Z axis). In this form, the carrying device 30 does not need to have a height difference design, that is, the contact surface 322 of the contact portion 32 and the surface of the carrying portion 33 used to carry the wafer 60 can be on the same plane, and the front surface 62 of the wafer 60 will only be slightly higher than the contact surface 322 of the contact portion 32. The height difference is the thickness t of the wafer 60. Therefore, the height difference H1 between the contact end 432 of the elastic contact member 43 and the contact end 422 of the probe 42 only needs to be greater than or equal to the thickness t of the wafer 60. Such a design is relatively simple. At the same time, the contact force of the contact end 432 of the elastic contact member 43 against the contact surface 322 when the probe 42 touches the wafer 60 can be further enhanced. Even if the contact surface 322 is not higher than the front surface 62 of the wafer 60, the problem of collision between the elastic contact member 43 and the wafer 60 can be avoided by designing with a horizontal distance, and the transmission stability of the transmission test signal can be further ensured.

[0080] Preferably, in the wafer inspection system 20 of the present invention, the height difference H1 between the contact end 432 of each elastic contact member 43 and the contact end 422 of the probe 42 on the vertical axis (Z axis) is greater than or equal to the height difference between the contact surface 322 of the carrier 30 and the front surface 62 of the wafer 60 on the vertical axis (Z axis) (i.e. Figure 7 (H1≥t).

[0081] In this case, it is possible to ensure that the elastic contact member 43 can reliably abut against the contact surface 322 of the carrier device 30 when the probe 42 contacts the wafer 60 , thereby further ensuring the transmission stability of the test signal.

[0082] Preferably, in the wafer inspection system 20 of the present invention, the point measuring device 40 further includes a substrate 41, the lower surface 412 of the substrate 41 faces the carrier device 30, and the probe 42 and the elastic contact member 43 are arranged on the lower surface of the substrate 41. When the probe 42 touches the front side 62 of the wafer 60, at least one elastic contact member 43 abuts against the contact portion 32 of the carrier device 30.

[0083] In this case, the probe 42 and the elastic contact member 43 are disposed on the same substrate 41 , which can reduce the number of components and further shorten the transmission path of the test signal to meet the test requirements of short pulse test signals.

[0084] Preferably, in the wafer inspection system 20 of the present invention, the spotting device 40 further includes a substrate 41 and a mounting member 48 disposed on the outer periphery of the substrate 41. The lower surface 412 of the substrate 41 and the lower surface 482 of the mounting member 48 face the carrier 30. The probe 42 is disposed on the lower surface 412 of the substrate 41, and the elastic contact member 43 is disposed on the lower surface 482 of the mounting member 48. When the probe 42 contacts the front surface 62 of the wafer 60, at least one elastic contact member 43 abuts against the contact portion 32 of the carrier 30.

[0085] In this case, the elastic contact member 43 is separately provided on a separate mounting member 48 different from the substrate 41. Therefore, when the substrate 41 and / or the probe 42 need to be repaired or replaced, or when the elastic contact member 43 needs to be repaired or replaced, each can be performed independently, while ensuring a shorter transmission path for the test signal. Therefore, the test requirements of short pulse test signals can be met, and the design of the components transmitting the test signal and the transmission stability can be prevented from being affected by the detection temperature, thereby reducing the cost of repair or replacement.

[0086] Preferably, in the wafer inspection system 20 of the present invention, the spotting device 40 further includes a substrate 41 and a mounting member 49 disposed separately from the substrate 41 and peripherally disposed on the substrate 41. The lower surface 412 of the substrate 41 and the lower surface of the mounting member 49 face the carrier 30, and the probes 42 are disposed on the lower surface 412 of the substrate 41. Resilient contact members 43 are disposed on the lower surface of the mounting member 49. When the probes 42 contact the front surface 62 of the wafer 60, at least one resilient contact member 43 abuts against the contact portion 32 of the carrier 30.

[0087] In this case, the elastic contact member 43 is separately provided on a separate mounting member 49 different from the substrate 41. Therefore, when the substrate 41 and / or the probe 42 need to be repaired or replaced, or when the elastic contact member 43 needs to be repaired or replaced, it can be further and more easily performed independently. Therefore, the test requirements of the short pulse test signal can be met, and the design of the component transmitting the test signal and the transmission stability can be avoided from being affected by the detection temperature, thereby reducing the cost of repair or replacement.

[0088] Preferably, in the wafer inspection system 20 of the present invention, the carrier device 30 further includes a carrier platform 31 having a contact portion 32 and a carrier portion 33 , for allowing the wafer 60 to be directly placed on the carrier platform 31 .

[0089] In this case, wafer 60 is placed directly onto carrier 31 having contact portion 32 and carrier portion 33. Therefore, the transmission path of the test signal sequentially passes through back surface 63 of wafer 60, carrier portion 33 of carrier 31, and contact portion 32 of carrier 31, and then returns to driver chip 54. This effectively ensures a shorter transmission path and meets the testing requirements of short pulse test signals.

[0090] Preferably, in the wafer inspection system 20 of the present invention, the carrier 31 includes a body 312 and a raised plate 314 fixed to the body 312 . The carrier portion 33 is formed by the body 312 , and the raised plate 314 is hollow and annular and forms the contact portion 32 .

[0091] In this case, a conventional platform-shaped supporting platform can be used as the main body 312 , and a raising plate 314 can be added to form the supporting platform 31 of this embodiment.

[0092] Preferably, in the wafer inspection system 20 of the present invention, the carrying device 30 further includes a carrying platform 31 having a contact portion 32 and a carrying plate 34 having a carrying portion 33, for the wafer 60 to be placed on the carrying plate 34 and placed on the carrying platform 31 together with the carrying plate 34.

[0093] In this case, the wafer 60 is placed on the carrier plate 34, which enables the wafer 60 to be moved along with the carrier plate 34 independently of the carrier platform 31 having the contact portion 32. Therefore, the time for moving the wafer during the inspection process can be further shortened, and the test requirements of the short pulse test signal can be met, thereby reducing the overall inspection time.

[0094] Preferably, in the wafer inspection system 20 of the present invention, the carrier 31 includes a body 312 and a raised plate 314 fixed to the body 312 . The carrier 34 is placed on the body 312 . The raised plate 314 is hollow and annular and forms the contact portion 32 .

[0095] In this case, a conventional platform-shaped supporting platform can be used as the main body 312 , and a raising plate 314 can be added to form the supporting platform 31 of this embodiment.

[0096] Preferably, in the wafer inspection system 20 of the present invention, the carrying device 30 further includes a carrying platform 31 and a carrying plate 34 having a contact portion 32 and a carrying portion 33, for the wafer 60 to be placed on the carrying plate 34 and placed on the carrying platform 31 together with the carrying plate 34.

[0097] In this case, the wafer 60 is placed directly onto the carrier 34 having the contact portion 32 and the supporting portion 33. Therefore, the transmission path of the test signal sequentially passes through the back surface 63 of the wafer 60, the supporting portion 33 of the carrier 34, and the contact portion 32 of the carrier 34, and then returns to the driver chip 54. This effectively ensures that the transmission path is shorter, meeting the testing requirements of short pulse test signals.

[0098] Preferably, in the wafer inspection system 20 of the present invention, the elastic contact members 43 are arranged on two opposite sides of the probe 42 with the probe 42 as the center.

[0099] In this case, the elastic contact member 43 can be arranged adjacent to the probe 42, thereby further miniaturizing the testing device 40 and ensuring that the elastic contact member 43 can reliably abut against the contact surface 322 of the carrier 30 when the probe 42 touches the wafer 60, thereby further ensuring the transmission stability of the test signal.

[0100] Preferably, in the wafer inspection system 20 of the present invention, the elastic contact members 43 are symmetrically arranged on two opposite sides of the probe 42 .

[0101] In this case, the elastic contact member 43 can be symmetrically arranged adjacent to the probe 42, thereby optimizing the configuration of the elastic contact member 43 and further miniaturizing it. At the same time, it ensures that the elastic contact member 43 can reliably abut against the contact surface 322 of the carrier device 30 when the probe 42 touches the wafer 60, thereby further ensuring the transmission stability of the test signal.

[0102] Preferably, in the wafer inspection system 20 of the present invention, the spot detection device 40 further includes a substrate 41 . The driving chip 54 is disposed on the substrate 41 and electrically connected to the probes 42 and the elastic contact members 43 through the internal circuit of the substrate 41 .

[0103] In this case, the driver chip 54 is directly mounted on the substrate 41 and electrically connected to the probes 42 and the elastic contacts 43 through the internal circuitry of the substrate 41. This effectively shortens the transmission path and satisfies the test requirements of short pulse test signals.

[0104] Preferably, in the wafer inspection system 20 of the present invention, the test signal output by the driver chip 54 is transmitted by the probe 42 to the front side 62 of the wafer 60 via the test circuit 22, and then returns to the driver chip 54 from the back side 63 of the wafer 60 through the carrying portion 33 of the carrying device 30, the contact portion 32 and the conductive module 47 of the point measuring device 40 in sequence.

[0105] In this case, the positive contact of the driver chip 54 is electrically connected to the probe 42, and the negative contact of the driver chip 54 is electrically connected to the conductive module 47 on the bottom surface of the testing device 40. When the probe 42 touches the positive electrode of the die, the conductive module 47 of the testing device 40 also contacts the contact portion 32 on the carrier device 30 and becomes conductive. Compared with the previous technology, no cable is required, so a shorter test loop can be formed to meet the test requirements of short pulse test signals.

[0106] Finally, it must be stated again that the constituent elements disclosed in the aforementioned embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of patent protection of this case. Replacements or changes to other equivalent elements should also be covered by the scope of patent protection of this case.

[0107] For example, the spot detection area 45 includes a probe 42 that is conductive and protrudes toward the carrier device 30. However, the present invention is not limited thereto, and the number of the probes 42 can be multiple.

[0108] Furthermore, in the embodiment, the measuring device 40 is fixed, while the supporting device 30 is mounted on a moving device 52 and can be driven by the moving device 52 to move along the X, Y, and Z axes. However, the present invention is not limited to this embodiment. Alternatively, the supporting device 30 can be fixed, while the measuring device 40 is mounted on a moving device (not shown) and can be driven by the moving device to move along the X, Y, and Z axes.

[0109] Furthermore, in the embodiment, the positive contact of each die is located on the front side 62 of the wafer 60, while the back side 63 of the wafer 60 serves as a planar negative contact shared by all the die. However, this is not limiting; the negative contact of each die may also be located on the front side 62 of the wafer 60, while the back side 63 of the wafer 60 serves as a planar positive contact shared by all the die.

[0110] Furthermore, in the embodiment, the elevated plate 314 is provided as a separate component on the main body 312 of the carrier 31, forming the contact portion 32. However, this is not limiting; the elevated plate 314 (contact portion 32) may also be provided integrally with the main body 312 of the carrier 31. Furthermore, in the embodiment where the carrier plate 34 includes the carrier portion 33 and the contact portion 32, the carrier portion 33 and the contact portion 32 of the carrier plate 34 are integrally provided. However, this is not limiting; the carrier portion 33 and the contact portion 32 of the carrier plate 34 may also be separate components that are then integrated.

Claims

1. A wafer inspection system, which can define a vertical axis and a horizontal axis perpendicular to the vertical axis, characterized in that The wafer inspection system includes: A carrier device includes a carrier portion and a contact portion located outside the carrier portion, wherein the carrier portion and the contact portion are electrically conductive and mutually connected, so that a wafer with a back surface placed on the carrier portion can be electrically connected to the contact portion; A point-testing device, which is movable relative to the carrier along the vertical axis and the horizontal axis and is disposed above the carrier portion and the contact portion. The point-testing device is electrically connected to a driver chip and transmits a test signal from the driver chip. The point-testing device includes a point-testing area and a contact area located outside the point-testing area. The point-testing area includes a conductive probe protruding downwardly toward the carrier device for contacting a front surface of the wafer. The contact area includes a conductive module, which includes a plurality of elastic contact members protruding toward the carrier device. When the probe contacts the front surface of the wafer, the conductive module and the contact portion of the carrier device abut against each other to form a test circuit. In which, the probe of the point measuring device has a contact end for touching the wafer, each of the elastic contact members has a contact end for abutting the contact portion of the carrier device, and the contact portion of the carrier device has a contact surface for abutting the contact end of the elastic contact member. The contact end of each elastic contact member is higher than the contact end of the probe at a height position on the vertical axis, and the contact surface of the carrier device is higher than the front side of the wafer at a height position on the vertical axis.

2. The wafer inspection system according to claim 1, wherein: The height difference between the contact end of each elastic contact piece and the contact end of the probe on the vertical axis is less than or equal to the height difference between the contact surface of the carrier device and the front surface of the wafer on the vertical axis.

3. A wafer inspection system, which can define a vertical axis and a horizontal axis perpendicular to the vertical axis, characterized in that The wafer inspection system includes: A carrier device comprising a carrier portion and a contact portion located outside the carrier portion, wherein the carrier portion and the contact portion are electrically conductive and electrically connected to each other, and are used for a wafer to be placed with a back surface thereof on the carrier portion and electrically connected to the contact portion; A point-testing device, which is movable relative to the carrier along the vertical axis and the horizontal axis and is disposed above the carrier portion and the contact portion. The point-testing device is electrically connected to a driver chip and transmits a test signal from the driver chip. The point-testing device includes a point-testing area and a contact area located outside the point-testing area. The point-testing area includes a conductive probe protruding downwardly toward the carrier device for contacting a front surface of the wafer. The contact area includes a conductive module, which includes a plurality of elastic contact members protruding toward the carrier device. When the probe contacts the front surface of the wafer, the conductive module and the contact portion of the carrier device abut against each other to form a test circuit. In which, the outer periphery of the wafer can define a first radius, each of the elastic contact members has a contact end for abutting the contact portion of the carrier device, the contact portion of the carrier device has a contact surface for abutting the contact end of the elastic contact member, the outer periphery of the contact surface can define a second radius, the second radius is greater than or equal to twice the first radius, the probe has a point contact end for touching the wafer, and the horizontal distance between the point contact end of the probe and the contact end of the elastic contact member most adjacent to it on the horizontal axis is greater than or equal to twice the first radius.

4. The wafer inspection system according to claim 3, wherein: The horizontal distance between the point contact end of the probe and the contact end of the elastic contact piece most adjacent to it on the horizontal axis is less than or equal to the second radius.

5. The wafer inspection system according to claim 3, wherein: The contact end of each elastic contact piece is lower than the contact end of the probe at a height position of the vertical axis.

6. The wafer inspection system according to claim 5, wherein: The height difference between the contact end of each elastic contact piece and the contact end of the probe on the vertical axis is greater than or equal to the height difference between the contact surface of the carrier device and the front surface of the wafer on the vertical axis.

7. The wafer inspection system according to any one of claims 1 to 6, wherein: The point measuring device includes a substrate, a lower surface of which faces the carrying device, the probe and each elastic contact member are arranged on the lower surface of the substrate, and when the probe touches the front surface of the wafer, at least one elastic contact member abuts against the contact portion of the carrying device.

8. The wafer inspection system according to any one of claims 1 to 6, wherein: The point measuring device includes a substrate and a mounting member arranged on the outer periphery of the substrate, a lower surface of the substrate and a lower surface of the mounting member face the carrying device, the probe is arranged on the lower surface of the substrate, and each of the elastic contact members is arranged on the lower surface of the mounting member. When the probe touches the front side of the wafer, at least one of the elastic contact members abuts against the contact portion of the carrying device.

9. The wafer inspection system according to any one of claims 1 to 6, wherein: The point measuring device includes a substrate and a mounting member that is separately arranged on the periphery of the substrate from the substrate. A lower surface of the substrate and a lower surface of the mounting member face the carrying device. The probe is arranged on the lower surface of the substrate. Each of the elastic contact members is arranged on the lower surface of the mounting member. When the probe touches the front side of the wafer, at least one of the elastic contact members abuts against the contact portion of the carrying device.

10. The wafer inspection system according to any one of claims 1 to 6, wherein: The carrying device includes a carrying platform having the contact portion and the carrying portion, so that the wafer is directly placed on the carrying platform.

11. The wafer inspection system according to claim 10, wherein: The supporting platform includes a main body and a heightening plate fixed to the main body. The supporting portion is formed by the main body. The heightening plate is in a hollow ring shape and forms the contact portion.

12. The wafer inspection system according to any one of claims 1 to 6, wherein: The carrying device includes a carrying platform with the contact portion and a carrying tray with the carrying portion, and the wafer is arranged on the carrying tray and placed on the carrying platform together with the carrying tray.

13. The wafer inspection system according to claim 12, wherein: The supporting platform includes a body and a heightening plate fixed to the body. The supporting disc is placed on the body. The heightening plate is in a hollow ring shape and forms the contact portion.

14. The wafer inspection system according to any one of claims 1 to 6, wherein: The carrying device includes a carrying platform and a carrying tray having the contact portion and the carrying portion, and the wafer is arranged on the carrying tray and placed on the carrying platform together with the carrying tray.

15. The wafer inspection system according to any one of claims 1 to 6, wherein: Each of the elastic contact members is arranged on two opposite sides of the probe with the probe as the center.

16. The wafer inspection system according to claim 15, wherein: The elastic contact members are symmetrically arranged on two opposite sides of the probe.

17. The wafer inspection system according to any one of claims 1 to 6, wherein: The point measuring device further includes a substrate. The driving chip is arranged on the substrate and is electrically connected to the probes and each of the elastic contact members through an internal circuit of the substrate.

18. The wafer inspection system according to any one of claims 1 to 6, wherein: The test signal output by the driver chip is transmitted to the front side of the wafer by the probe through the test circuit, and then returns to the driver chip from the back side of the wafer through the carrying portion of the carrying device, the contact portion, the point detection device, and the conductive module in sequence.

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