Reticle, mask, and lithographic apparatus

Abstract

The present application relates to a mask base, a mask and a photolithography device. The mask base comprises a substrate and a first light shielding layer and a second light shielding layer arranged on two sides of the substrate respectively; wherein the first light shielding layer is used for forming a first positioning mark; the second light shielding layer is used for forming a first mask pattern; the first positioning mark and the first mask pattern are applied to a first photolithography. The mask base, the mask and the photolithography device provided by the present application can improve the space utilization of the mask, and further improve the space utilization of the wafer, so as to reduce the production cost of the semiconductor device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a mask substrate, a mask and a photolithography device. BACKGROUND

[0002] With the development of innovative technologies such as artificial intelligence (AI), 5th generation mobile communication technology (5G), big data, artificial intelligence and internet of things (AIoT), and autonomous driving, the reduction of device feature sizes in microprocessors (CPUs) and dynamic random access memories (DRAMs) presents an accelerating and deviating trend from Moore's Law, which in turn exacerbates the difficulty of semiconductor device preparation.

[0003] Currently, the most complex and difficult step in the semiconductor manufacturing process is photolithography, which can account for, for example, 1 / 3 of the entire production process, and photolithography equipment has therefore become one of the most important semiconductor manufacturing equipment.

[0004] However, as the integration of semiconductor devices becomes higher and higher and the device feature size becomes smaller and smaller, the number of mask plates required for semiconductor device preparation also increases, for example, more than eighty mask plates are required to complete the preparation of a chip at a 10nm process node. Moreover, as the process node size decreases, the cost of mask plates also increases. Thus, the production cost of semiconductor devices remains high. SUMMARY

[0005] Therefore, the present application provides a mask substrate, a mask and a photolithography device, which are advantageous in improving the space utilization of the mask plate, and thus improving the space utilization of the wafer, so as to reduce the production cost of the semiconductor device.

[0006] In one aspect, the present application provides a mask substrate, comprising: a substrate and first and second light shielding layers respectively arranged on two sides of the substrate; wherein the first light shielding layer is used to form a first positioning mark; the second light shielding layer is used to form a first mask pattern; the first positioning mark and the first mask pattern are applied to first photolithography.

[0007] In the embodiments of the present disclosure, the first light shielding layer and the second light shielding layer are respectively formed on two sides of the substrate, and the first positioning mark and the first mask pattern can be formed on the two sides of the substrate, that is, the first positioning mark can be formed by using the first light shielding layer, and the first mask pattern can be formed by using the second light shielding layer. Therefore, after the mask substrate is used to manufacture the mask plate, the space utilization of the mask plate can be effectively improved, and the space utilization of the wafer is also improved, so as to reduce the production cost of the semiconductor device.

[0008] In some embodiments, the first light shielding layer can be a double-color light shielding layer.

[0009] In some embodiments, the first light shielding layer is used for transmitting a first exposure light beam and reflecting a first positioning light beam, the first exposure light beam is used for exposure of the first mask pattern in the first photolithography, and the first positioning light beam is used for positioning of the first mask pattern in the first photolithography.

[0010] In the embodiments of the present disclosure, the first light shielding layer can be a double-color light shielding layer, so as to ensure that the first positioning mark and the first mask pattern are independent and do not affect each other in design and use by using the reflection of the first positioning light beam and the transmission of the first exposure light beam.

[0011] In some embodiments, the first light shielding layer is also used for forming a second mask pattern, the second light shielding layer is also used for forming a second positioning mark, and the second positioning mark and the second mask pattern are applied to a second photolithography. The first light shielding layer is used for transmitting a first exposure light beam, shielding a second exposure light beam, and reflecting a first positioning light beam. The second light shielding layer is used for transmitting the second exposure light beam, shielding the first exposure light beam, and reflecting a second positioning light beam. The wavelength of the first exposure light beam is different from the wavelength of the second exposure light beam, the first exposure light beam is used for exposure of the first mask pattern in the first photolithography, and the second exposure light beam is used for exposure of the second mask pattern in the second photolithography. The first positioning light beam is used for positioning of the first mask pattern in the first photolithography, and the second positioning light beam is used for positioning of the second mask pattern in the second photolithography.

[0012] In the embodiments of the present disclosure, the first light shielding layer and the second light shielding layer can be multi-color light shielding layers, that is, the first light shielding layer can be used to form the second mask pattern on the basis of the first positioning mark, and the second light shielding layer can be used to form the second positioning mark on the basis of the first mask pattern, by using the selectivity of the multi-color light shielding layer to different wavelengths of light beams. In this way, after the mask substrate is used to prepare a mask plate, the mask plate can have two mask patterns, which can be used to implement two different photolithographies based on the wavelength selectivity of the first light shielding layer and the second light shielding layer to light beams, for example, to implement a first photolithography based on the first positioning mark and the first mask pattern, and a second photolithography based on the second positioning mark and the second mask pattern, and to implement the first photolithography by using a first positioning light beam and a first exposure light beam respectively, and to implement the second photolithography by using a second positioning light beam and a second exposure light beam respectively. In this way, the mask patterns on the two sides of the mask plate can be flexibly designed according to requirements, so as to effectively reduce the total number of mask plates required in the preparation process of semiconductor devices, and thus to further reduce the production cost of semiconductor devices.

[0013] In some embodiments, the mask base plate further comprises: a first photoresist layer arranged on the side of the first light shielding layer away from the substrate, and a second photoresist layer arranged on the side of the second light shielding layer away from the substrate.

[0014] In another aspect, the embodiments of the present disclosure provide a mask plate, comprising: a substrate and a first positioning mark and a first mask layer arranged on the two sides of the substrate respectively, wherein the first mask layer has a first mask pattern; and the first positioning mark and the first mask pattern are used for a first photolithography.

[0015] In the embodiments of the present disclosure, the first positioning mark and the first mask layer are formed on the two sides of the substrate, and the first photolithography can be implemented by using the first positioning mark and the first mask pattern in the first mask layer. In this way, the space utilization of the mask plate can be effectively improved, and thus the space utilization of the wafer can be improved, so as to reduce the production cost of semiconductor devices.

[0016] In some embodiments, the first positioning mark can be a two-color light shielding layer.

[0017] In some embodiments, the first positioning mark is used for transmitting a first exposure light beam and reflecting a first positioning light beam, wherein the first exposure light beam is used for exposure of the first mask pattern in the first photolithography, and the first positioning light beam is used for positioning of the first mask pattern in the first photolithography.

[0018] In the embodiments of the present disclosure, the first positioning mark can be a two-color light shielding layer, so as to use the reflection of the first positioning light beam and the transmission of the first exposure light beam by the first positioning mark to ensure that the first positioning mark and the first mask pattern in the first mask layer are independent and do not affect each other.

[0019] Optionally, the first positioning mark is misaligned or overlapped with a projection of the first mask pattern on the substrate.

[0020] In some embodiments, the mask plate further comprises: a second mask layer disposed in the same layer as the first positioning mark, and a second positioning mark disposed in the same layer as the first mask layer; the second mask layer has a second mask pattern, and the second positioning mark and the second mask pattern are applied to a second photolithography. Wherein, the first positioning mark is used for reflecting a first positioning beam and transmitting a first exposure beam; the first mask layer is used for partially shielding the first exposure beam and transmitting the second exposure beam; the second positioning mark is used for reflecting a second positioning beam and transmitting a second exposure beam; and the second mask layer is used for partially shielding the second exposure beam and transmitting the second exposure beam. The wavelength of the first exposure beam and the wavelength of the second exposure beam are different, the first exposure beam is used for exposure of the first mask pattern in the first photolithography, and the second exposure beam is used for exposure of the second mask pattern in the second photolithography. The first positioning beam is used for positioning of the first mask pattern in the first photolithography, and the second positioning beam is used for positioning of the second mask pattern in the second photolithography.

[0021] Optionally, the first positioning mark and the second mask layer have a first interval in a direction parallel to the substrate.

[0022] Optionally, the second positioning mark and the first mask layer have a second interval in a direction parallel to the substrate.

[0023] In the embodiments of the present disclosure, the mask plate can have two mask patterns, to respectively implement two different photolithographies based on the selectivity of the first positioning mark, the first mask layer, the second mask layer and the second positioning mark to multiple different wavelength beams, for example: respectively implementing a first photolithography based on the first positioning mark and the first mask pattern, and a second photolithography based on the second positioning mark and the second mask pattern; and respectively using a first positioning beam and a first exposure beam for the first photolithography, and respectively using a second positioning beam and a second exposure beam for the second photolithography. In this way, the mask patterns in the mask layers on both sides of the mask plate can be flexibly designed according to the needs, so as to effectively reduce the total number of mask plates required in the preparation process of the semiconductor device, and thus further reduce the production cost of the semiconductor device.

[0024] In another aspect, the embodiments of the present disclosure provide a photolithography device, comprising: an exposure machine, and a mask plate as described in some embodiments above; the exposure machine is used for irradiating an exposure beam to the mask plate. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the embodiments will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and for those skilled in the art, other drawings can be obtained based on these drawings without creative labor.

[0026] Figure 1 A structural schematic diagram of a mask substrate provided in an embodiment;

[0027] Figure 2 A structural schematic diagram of another mask substrate provided in an embodiment;

[0028] Figure 3 A structural schematic diagram of a mask provided in an embodiment;

[0029] Figure 4 A structural schematic diagram of another mask provided in an embodiment;

[0030] Figure 5 and Figure 6 are respectively structural schematic diagrams of a photolithography equipment provided in an embodiment.

[0031] Explanation of reference signs:

[0032] 11 - substrate, 12 - first light shielding layer, 13 - second light shielding layer, 14 - first photoresist layer,

[0033] 15 - second photoresist layer; K1 - first mask pattern, K2 - second mask pattern;

[0034] 21 - first positioning mark, 22 - first mask layer, 23 - second positioning mark, 24 - second mask layer,

[0035] 2 - mask, S1 - first side, S2 - second side;

[0036] 3 - exposure machine, 31A - first positioning light source, 31B - first exposure light source,

[0037] 32A - second positioning light source, 32B - second exposure light source; 4 - sample to be etched. DETAILED DESCRIPTION

[0038] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms, and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure.

[0040] In describing a position relationship, unless otherwise specified, when an element such as a layer, film or substrate is referred to as being "on" another film layer, it can be directly on the other film layer or intervening film layers can also be present. It will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers can also be present.

[0041] In the case using "include", "have", and "contain" described herein, unless the explicit limiting term such as "only", "consisting of", etc. is used, another component can be added. Unless otherwise mentioned, the singular form of the term can include the plural form, and it cannot be understood as the number of one.

[0042] It should be understood that although the terms "first", "second", etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element without departing from the scope of the present disclosure.

[0043] It should also be understood that, in interpreting the elements, although not explicitly described, the elements are interpreted to include an acceptable range of error around the specific value determined by the skilled person. For example, "about", "approximately" or "substantially" can mean within one or more standard deviations, without being limited here.

[0044] Furthermore, the embodiments of the present application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic and many of the regions are not drawn to scale. Also, the dimensions of the regions in the figures are chosen primarily for convenience and clarity of presentation and are not necessarily to scale.

[0045] At present, with the increasing integration of semiconductor devices and the decreasing feature size of the devices, the number of mask plates required for the preparation of semiconductor devices is also increasing, for example, more than eighty mask plates are required for the preparation of a chip at a 10nm process node. Moreover, as the process node size decreases, the cost of mask plates is also increasing. Thus, the production cost of semiconductor devices is high.

[0046] Therefore, the mask base plate, mask plate and photolithography equipment provided by the embodiments of the present disclosure can form patterns on both sides of the substrate to prepare mask plates, thereby improving the space utilization of the mask plates and the space utilization of the wafer to be etched. Moreover, the mask base plate, mask plate and photolithography equipment provided by the embodiments of the present disclosure are also beneficial to reducing the total number of mask plates required in the preparation process of semiconductor devices. Thus, the production cost of semiconductor devices can be effectively reduced.

[0047] Please refer to Figure 1 Some embodiments of the present disclosure provide a mask base plate, comprising: a substrate 11, and a first light shielding layer 12 and a second light shielding layer 13 respectively arranged on both sides of the substrate 11; the first light shielding layer 12 is used to form a first positioning mark; the second light shielding layer 13 is used to form a first mask pattern; wherein the first mask pattern and the first positioning mark are used for first photolithography.

[0048] Optionally, the substrate 11 comprises a light-transmitting substrate, for example, a quartz glass substrate, a soda glass substrate or a resin substrate.

[0049] Optionally, the first light shielding layer 12 is a dual-color light shielding layer.

[0050] Here, the dual-color light shielding layer refers to a film layer having a light filtering function and being capable of transmitting light of a certain specific range of wavelengths and shielding or reflecting light of another specific range of wavelengths.

[0051] In some embodiments, the first light shielding layer 12 is used to transmit a first exposure light beam and reflect a first positioning light beam. Wherein the first exposure light beam is used for the exposure of the first mask pattern in the first photolithography; the first positioning light beam is used for the positioning of the first mask pattern in the first photolithography.

[0052] Therefore, the second light shielding layer 13 can be formed by selecting a material capable of shielding the first exposure light beam.

[0053] Optionally, the first exposure light beam is an ultraviolet light beam or a deep ultraviolet light beam.

[0054] Optionally, the first positioning light beam is a visible light beam or an infrared light beam.

[0055] In the embodiments of the present disclosure, the first light shielding layer 12 can be a double-color light shielding layer, so as to ensure that the first positioning mark is independent of and does not affect the design and use of the first mask pattern by reflecting the first positioning light beam and transmitting the first exposure light beam.

[0056] From the above, in the embodiments of the present disclosure, the first light shielding layer 12 and the second light shielding layer 13 are respectively formed on the two sides of the substrate 11, and the patterns can be correspondingly formed on the two sides of the substrate 11, that is, the first positioning mark can be formed by using the first light shielding layer 12, and the first mask pattern can be formed by using the second light shielding layer 13. In this way, after the mask substrate is used to prepare a mask plate, the space utilization of the mask plate can be effectively improved, and the space utilization of the wafer is further improved, so as to reduce the production cost of the semiconductor device.

[0057] It is worth mentioning that in some embodiments, the first light shielding layer 12 can also be used to form a second mask pattern, and the second light shielding layer 13 can also be used to form a second positioning mark. The second positioning mark and the second mask pattern are applied to a second photolithography. In this way, the first light shielding layer 12 can be used to transmit the first exposure light beam, block the second exposure light beam, and reflect the first positioning light beam. The second light shielding layer 13 can be used to transmit the second exposure light beam, block the first exposure light beam, and reflect the second positioning light beam.

[0058] Here, the wavelength of the first exposure light beam and the wavelength of the second exposure light beam are different. The first exposure light beam is used for exposure of the first mask pattern in the first photolithography, and the second exposure light beam is used for exposure of the second mask pattern in the second photolithography. Alternatively, the first exposure light beam and the second exposure light beam can be specific exposure light beams of different wavelengths in ultraviolet light beams or deep ultraviolet light beams.

[0059] Here, the first positioning light beam is used for positioning of the first mask pattern in the first photolithography, and the second positioning light beam is used for positioning of the second mask pattern in the second photolithography. Alternatively, the first positioning light beam and the second positioning light beam can be light beams of the same wavelength, for example, can be provided by the same positioning light source. Alternatively, the first positioning light beam and the second positioning light beam can be specific positioning light beams of different wavelengths in visible light beams or infrared light beams.

[0060] Correspondingly, the first light shielding layer 12 and the second light shielding layer 13 can both be multi-color light shielding layers (for example, three-color light shielding layers or double-color light shielding layers), that is, can select a plurality of light beams of different wavelengths.

[0061] In the embodiments of the present disclosure, the first light shielding layer 12 and the second light shielding layer 13 can adopt a multi-color light shielding layer, that is, the first light shielding layer 12 can be used to form a second mask pattern on the basis of the first positioning mark by using the selectivity of the multi-color light shielding layer to different wavelengths of light beams, and the second light shielding layer 13 can be used to form a second positioning mark on the basis of the first mask pattern. In this way, after the mask substrate is used to prepare a mask plate, the mask plate can have two mask patterns, which can be used to respectively implement two different photolithographies based on the wavelength selectivity of the first light shielding layer and the second light shielding layer to light beams, for example, respectively implementing a first photolithography based on the first positioning mark and the first mask pattern, and a second photolithography based on the second positioning mark and the second mask pattern, and respectively using a first positioning light beam and a first exposure light beam for the first photolithography, and respectively using a second positioning light beam and a second exposure light beam for the second photolithography. In this way, the mask patterns on both sides of the mask plate can be flexibly designed according to requirements, so as to effectively reduce the total number of mask plates required in the preparation process of semiconductor devices, thereby being beneficial to further reducing the production cost of semiconductor devices.

[0062] In some embodiments, referring to Figure 2 , the mask base plate further comprises: a first photoresist layer 14 arranged on the side of the first light shielding layer 12 away from the substrate 11, and a second photoresist layer 15 arranged on the side of the second light shielding layer 13 away from the substrate 11.

[0063] Here, the first photoresist layer 14 and the second photoresist layer 15 can be selected and arranged according to actual requirements, for example, a positive photoresist layer or a negative photoresist layer can be selected.

[0064] In the embodiments of the present disclosure, the first photoresist layer 14 is arranged on the side of the first light shielding layer 12 away from the mask substrate 11, and can be used to form a first pattern to transfer the first pattern to the first light shielding layer 12, so as to obtain the first positioning mark. In the example in which the first light shielding layer 12 is also used to form the second mask pattern, the first positioning mark and the second mask pattern can also be obtained synchronously or in steps based on the first pattern in the first photoresist layer 14.

[0065] In the embodiments of the present disclosure, the second photoresist layer 15 is arranged on the side of the second light shielding layer 13 away from the mask substrate 11, and can be used to form a second pattern to transfer the second pattern to the second light shielding layer 13, so as to obtain the first mask pattern. In the example in which the second light shielding layer 13 is also used to form the second positioning mark, the first mask pattern and the second positioning mark can also be obtained synchronously or in steps based on the second pattern in the second photoresist layer 15.

[0066] It should be noted that, after the first positioning mark is formed in the first light shielding layer 12 by using the first photoresist layer 14, or the first positioning mark and the first mask pattern are formed, the first photoresist layer 14 can be removed by peeling. After the first mask pattern is formed in the second light shielding layer 13 by using the second photoresist layer 15, or the first mask pattern and the second positioning mark are formed, the second photoresist layer 15 can be removed by peeling. Thus, the mask plate is prepared.

[0067] In addition, in another aspect, referring to Figure 3 and Figure 4 some embodiments of the present disclosure provide a mask plate, comprising: a substrate 11 and a first positioning mark 21 and a first mask layer 22 disposed on both sides of the substrate 11 respectively, the first mask layer 22 has a first mask pattern K1; wherein the first positioning mark 21 and the first mask pattern K1 are applied to the first lithography.

[0068] Here, the first positioning mark 21 can be formed by patterning the first light shielding layer 12 in the mask base plate. The first mask layer 22 can be formed by patterning the second light shielding layer 13 in the mask base plate.

[0069] In the embodiments of the present disclosure, the first positioning mark 21 and the first mask layer 22 are formed on both sides of the substrate 11, and the first lithography can be realized by using the first positioning mark 21 and the first mask pattern K1 in the first mask layer 22. In this way, the space utilization of the mask plate can be effectively improved, and the space utilization of the wafer can be improved, so as to reduce the production cost of the semiconductor device.

[0070] In some embodiments, the first positioning mark 21 can be a double-color light shielding layer.

[0071] In some embodiments, the first positioning mark 21 is used to transmit a first exposure light beam and reflect a first positioning light beam; wherein the first exposure light beam is used for exposure of the first mask pattern K1 in the first lithography; and the first positioning light beam is used for positioning of the first mask pattern K1 in the first lithography.

[0072] The positioning of the first mask pattern K1 by the first positioning light beam specifically refers to: after the first positioning mark 21 is irradiated by the first positioning light beam, the positioning between the mask plate and the sample to be etched and the exposure machine can be realized by identifying the reflection signal of the first positioning mark 21 to the first positioning light beam, so as to realize the positioning of the first mask pattern K1.

[0073] The exposure of the first mask pattern K1 by the first exposure light beam specifically refers to: after the first mask pattern K1 is positioned, the first mask layer 22 can be transferred to the sample to be etched by irradiating the mask plate by the first exposure light beam, so as to realize the exposure (development) of the first mask pattern K1.

[0074] Based on this, the first mask layer 22 is formed by using a material that can block the first exposure light beam.

[0075] Optionally, the first exposure light beam is an ultraviolet light beam or a deep ultraviolet light beam.

[0076] Optionally, the first positioning light beam is a visible light beam or an infrared light beam.

[0077] In the embodiments of the present disclosure, the first positioning mark 21 can adopt a double-color light-shielding layer, and the first positioning mark 21 can be used to reflect the first positioning light beam and transmit the first exposure light beam, so as to ensure that the first positioning mark 21 and the first mask pattern K1 in the first mask layer 22 are independent and do not affect each other.

[0078] For example, the first positioning mark 21 and the first mask pattern K1 are misaligned or overlapped in the orthographic projection of the substrate 11.

[0079] Please refer to Figure 4 In other embodiments, the mask plate further comprises: a second mask layer 24 arranged in the same layer as the first positioning mark 21, and a second positioning mark 23 arranged in the same layer as the first mask layer 22; the second mask layer 24 has a second mask pattern K2, and the second positioning mark 23 and the second mask pattern K2 are applied to the second photolithography.

[0080] Here, the first positioning mark 21 is used to reflect the first positioning light beam and transmit the first exposure light beam; the first mask layer 22 is used to partially block the first exposure light beam and transmit the second exposure light beam; the second positioning mark 23 is used to reflect the second positioning light beam and transmit the second exposure light beam; and the second mask layer 24 is used to partially block the second exposure light beam and transmit the second exposure light beam.

[0081] Here, the wavelength of the first exposure light beam and the wavelength of the second exposure light beam are different, the first exposure light beam is used for exposure of the first mask pattern K1 in the first photolithography, and the second exposure light beam is used for exposure of the second mask pattern K2 in the second photolithography. Optionally, the first exposure light beam and the second exposure light beam are specific exposure light beams of different wavelengths in an ultraviolet light beam or a deep ultraviolet light beam.

[0082] Here, the first positioning light beam is used for positioning of the first mask pattern K1 in the first photolithography, and the second positioning light beam is used for positioning of the second mask pattern K2 in the second photolithography. Optionally, the first positioning light beam and the second positioning light beam can be light beams of the same wavelength, for example, can be provided by the same positioning light source. Alternatively, the first positioning light beam and the second positioning light beam can be specific positioning light beams of different wavelengths in a visible light beam or an infrared light beam.

[0083] Accordingly, the first positioning mark 21 and the second mask layer 24 can be formed of the same material, such as the same multi-color light-shielding layer. The second positioning mark 23 and the first mask layer 22 can also be formed of the same material, such as the same multi-color light-shielding layer. The multi-color light-shielding layer is, for example, a three-color light-shielding layer or a two-color light-shielding layer, which means that multiple different wavelengths of light beams can be selected.

[0084] Here, the first positioning mark 21 and the second mask layer 24 can be formed by graphically representing the first light-shielding layer 12 in the aforementioned mask substrate. The first mask layer 22 and the second positioning mark 23 can be formed by graphically representing the second light-shielding layer 13 in the aforementioned mask substrate.

[0085] The positioning of the first positioning beam on the first mask pattern K1 and the exposure of the first exposure beam on the first mask pattern K1 can be found in the aforementioned relevant records, which will not be described in detail here.

[0086] The positioning of the second mask pattern K2 by the second positioning beam refers to the following: after the second positioning beam illuminates the second positioning mark 23, the positioning between the mask, the sample to be etched, and the exposure machine can be achieved by identifying the reflection signal of the second positioning mark 23 to the second positioning beam, thereby achieving the positioning of the second mask pattern K2.

[0087] The exposure of the second mask pattern K2 by the second exposure beam refers to the following: after positioning the second mask pattern K2, the second exposure beam is used to irradiate the mask, which can transfer the second mask pattern K2 in the second mask layer 24 to the sample to be etched, thereby realizing the exposure (development) of the second mask pattern K2.

[0088] It should be noted that for some possible implementation methods, please refer to [the relevant documentation / reference]. Figure 4 The first positioning mark 21 and the second mask layer 24 have a first interval D1 in a direction parallel to the substrate 11; the second positioning mark 23 and the first mask layer 22 have a second interval D2 in a direction parallel to the substrate 11.

[0089] This means that although the first positioning mark 21 and the second mask layer 24 can be formed based on the same multi-color light-shielding layer, the first positioning mark 21 and the second mask layer 24 should have independent boundary isolation from each other in order to accurately identify the position of the first positioning mark 21. For example, the first positioning mark 21 is located outside the second mask layer 24, and there is a first gap D1 between the outer boundary of the first positioning mark 21 and the outer boundary of the second mask layer 24.

[0090] Similarly, the second positioning mark 23 and the first mask layer 22 can be formed based on the same multi-color light shielding layer, but the second positioning mark 23 and the first mask layer 22 should be independently separated from each other to facilitate accurate identification of the position of the second positioning mark 23. For example, the second positioning mark 23 is located outside the first mask layer 22, and there is a second interval D2 between the outer boundary of the second positioning mark 23 and the outer boundary of the first mask layer 22.

[0091] The first interval D1 and the second interval D2 can be selected and set according to actual needs, as long as the boundary recognition of the corresponding positioning mark is not affected.

[0092] In addition, in some possible embodiments, the second positioning mark 23 and the second mask pattern K2 are misaligned or overlapped in the orthographic projection of the substrate 11.

[0093] In some possible embodiments, the orthographic projection of the first positioning mark 21 on the substrate 11 and the orthographic projection of the second positioning mark 23 on the substrate 11 are misaligned or overlapped.

[0094] In some possible embodiments, the orthographic projection of the first mask pattern K1 on the substrate 11 and the orthographic projection of the second mask pattern K2 on the substrate 11 are misaligned or overlapped.

[0095] Therefore, the positional relationship between the second positioning mark 23 and the second mask pattern K2, the first positioning mark 21 and the second positioning mark 23, and the first mask pattern K1 and the second mask pattern K2 are relatively independent and do not affect each other, and can be arbitrarily selected according to actual needs.

[0096] In the embodiments of the present disclosure, the mask plate can have two mask patterns to respectively implement two different photolithographies based on the selectivity of the first positioning mark, the first mask layer, the second mask layer, and the second positioning mark to a plurality of different wavelength light beams, for example: respectively implementing a first photolithography based on the first positioning mark 21 and the first mask pattern K1, and a second photolithography based on the second positioning mark 23 and the second mask pattern K2; and respectively using the first positioning light beam and the first exposure light beam for the first photolithography, and respectively using the second positioning light beam and the second exposure light beam for the second photolithography. In this way, the mask patterns in the mask layers on both sides of the mask plate can be flexibly designed according to needs, so as to effectively reduce the total number of mask plates required in the preparation process of the semiconductor device, thereby further reducing the production cost of the semiconductor device.

[0097] In addition, it can be understood that the first mask pattern K1 and the second mask pattern K2 are usually open patterns.

[0098] Optionally, the first mask pattern K1 and the second mask pattern K2 are different in pattern, which can be set according to actual requirements, and the embodiments of the present disclosure do not make any limitation in this regard.

[0099] Optionally, the wavelength of the second exposure light beam is smaller than the wavelength of the first exposure light beam, so that the second lithography is more likely to have a higher lithography resolution. The process size of the second mask pattern K2 can be smaller than the process size of the first mask pattern K1.

[0100] It should be noted that, in the use of the mask plate, if the first lithography is needed, a first positioning light beam can be irradiated to the mask plate from the side where the first positioning mark 21 is located, so that after positioning by the first positioning mark 21, the first exposure light beam is irradiated to the mask plate for exposure of the first mask pattern; if the second lithography is needed, the mask plate can be flipped, and a second positioning light beam can be irradiated to the mask plate from the side where the second positioning mark 23 is located, so that after positioning by the second positioning mark 23, the second exposure light beam is irradiated to the mask plate for exposure of the second mask pattern. In this way, the corresponding lithography of the two mask patterns can be realized by flipping the mask plate, which is simple to operate and is also conducive to improving the production efficiency.

[0101] Please refer to Figure 5 and Figure 6 Some embodiments of the present disclosure also provide a lithography device, which comprises an exposure machine 3 and a mask plate 2 as described in some embodiments above. The exposure machine 3 is used to irradiate an exposure light beam to the mask plate 2.

[0102] It can be understood that the positioning light beam (including the first positioning light beam and / or the second positioning light beam) can be provided by an independent positioning light source or by a positioning light source integrated in the exposure machine 3. Optionally, the positioning light source can be movable to track the corresponding positioning mark and realize the aligned positioning of the positioning mark.

[0103] For example, please refer to Figure 5 The exposure machine 3 comprises a first positioning light source 31A and a first exposure light source 31B, wherein the first positioning light source 31A is used to emit the first positioning light beam L11, and the first exposure light source 31B is used to emit the first exposure light beam L12. The first positioning light source 31A is movable.

[0104] Optionally, the first side S1 and the second side S2 of the mask plate 2 are oppositely arranged, the first positioning mark is located on the first side S1 of the mask plate 2, and the first mask layer is located on the second side S2 of the mask plate 2, and the first mask layer has the first mask pattern. As Figure 5As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched. Figure 5 As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched.

[0105] In some examples, the mask plate 2 further comprises a second positioning mark and a second mask layer as described in some previous examples, wherein the second positioning mark is located on the second side S2 of the mask plate 2, and the second mask layer is located on the first side S1 of the mask plate 2, and the second mask layer has a second mask pattern.

[0106] As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched. Figure 6 As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched.

[0107] As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched. Figure 6 Figure 6 As shown in FIG. 1(a), the first positioning light source 31A is configured to irradiate the first positioning light beam L11 from the first side S1 of the mask plate 2 to perform the positioning alignment of the first mask pattern in the first lithography based on the first positioning mark; and after the positioning alignment of the first mask pattern is achieved, the first positioning light source 31A can be moved away from the exposure area of the exposure machine 3. Then, as shown in FIG. 1(b), the first exposure light source 31B is configured to irradiate the first exposure light beam L12 from the first side S1 of the mask plate 2 to perform the exposure of the first mask pattern in the first lithography based on the first mask layer, i.e. to transfer the first mask pattern into the sample 4 to be etched.

[0108] Optionally, the first positioning light source 31A and the second positioning light source 32A can be different light sources, or can be the same light source.

[0109] Optionally, the first exposure light source 31B and the second exposure light source 32B can be different light sources, or can be the same light source, for example, a light source capable of emitting at least two different wavelength light signals at different times.

[0110] As described above, the mask plate 2 in some previous examples has the advantages, and the lithography equipment also has the advantages, which will not be described here in detail.

[0111] ​Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, as long as the combination of the technical features does not exist in contradiction, it shall be considered within the scope of the present disclosure.

[0112] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it shall not be understood as a limitation on the patent scope of the present application. It shall be pointed out that, for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, and these shall be within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A mask substrate, characterized in that, include: A substrate and a first light-shielding layer and a second light-shielding layer respectively disposed on both sides of the substrate; wherein... The first light-shielding layer is used to form the first positioning mark; The second light-shielding layer is used to form the first mask pattern; The first positioning mark and the first mask pattern are applied to the first photolithography; the first positioning mark and the first mask pattern are misaligned or overlapped in their orthographic projections on the substrate; The first light-shielding layer is also used to form a second mask pattern; the second light-shielding layer is also used to form a second positioning mark; the second positioning mark and the second mask pattern are applied to the second photolithography; the second positioning mark and the second mask pattern are misaligned or overlapped in the orthographic projection on the substrate; The first light-shielding layer is used to transmit the first exposure beam, block the second exposure beam, and reflect the first positioning beam. The second light-shielding layer is used to transmit the second exposure beam, block the first exposure beam, and reflect the second positioning beam; The wavelengths of the first exposure beam and the second exposure beam are different. The first exposure beam is used to expose the first mask pattern in the first photolithography, and the second exposure beam is used to expose the second mask pattern in the second photolithography. The first positioning beam is used for positioning the first mask pattern in the first photolithography, and the second positioning beam is used for positioning the second mask pattern in the second photolithography.

2. The mask substrate according to claim 1, characterized in that, Also includes: A first photoresist layer is disposed on the side of the first light-shielding layer opposite to the substrate, and a second photoresist layer is disposed on the side of the second light-shielding layer opposite to the substrate.

3. A photomask, characterized in that, include: The substrate includes a first positioning mark and a first mask layer respectively disposed on both sides of the substrate, the first mask layer having a first mask pattern; wherein, the first positioning mark and the first mask pattern are applied to the first photolithography; the first positioning mark and the first mask pattern are misaligned or overlapped in their orthographic projections on the substrate; The mask further includes: a second mask layer disposed on the same layer as the first positioning mark, and a second positioning mark disposed on the same layer as the first mask layer; the second mask layer has a second mask pattern, and the second positioning mark and the second mask pattern are applied to the second photolithography; the second positioning mark and the second mask pattern are misaligned or overlapped in their orthographic projections onto the substrate; wherein... The first positioning mark is used to reflect the first positioning beam and transmit the first exposure beam; the first mask pattern is used to block the first exposure beam and transmit the second exposure beam; the second positioning mark is used to reflect the second positioning beam and transmit the second exposure beam; the second mask pattern is used to block the second exposure beam and transmit the first exposure beam. The wavelengths of the first exposure beam and the second exposure beam are different. The first exposure beam is used to expose the first mask pattern in the first photolithography, and the second exposure beam is used to expose the second mask pattern in the second photolithography. The first positioning beam is used to position the first mask pattern in the first photolithography, and the second positioning beam is used to position the second mask pattern in the second photolithography.

4. The mask according to claim 3, characterized in that, The first positioning mark and the second mask layer are spaced apart in a direction parallel to the substrate; the second positioning mark and the first mask layer are spaced apart in a direction parallel to the substrate.

5. A photolithography apparatus, characterized in that, include: An exposure machine, and a mask as described in claim 3 or 4; the exposure machine is used to illuminate the mask with an exposure beam.

6. The photolithography apparatus according to claim 5, characterized in that, The exposure machine includes a first positioning light source and a first exposure light source, wherein the first positioning light source is used to emit a first positioning beam and the first positioning light source is movable; the first exposure light source is used to emit a first exposure beam. The exposure machine further includes a second positioning light source and a second exposure light source, wherein the second positioning light source is used to emit a second positioning beam and is movable; the second exposure light source is used to emit a second exposure beam.

7. The photolithography apparatus according to claim 6, characterized in that, The first positioning light source and the second positioning light source are different light sources or the same light source; The first exposure light source and the second exposure light source are different light sources, or they are the same light source capable of emitting at least two different wavelength light signals in a time-division manner.

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