Method for calculating pk a energy spectrum based on multi-particle source simulation
By using a multi-particle source simulation method, a semiconductor detector model was constructed. A combination of protons, electrons, and gamma particles was used to simulate the real space environment, which solved the problem of inaccurate simulation results from a single particle source. This resulted in more efficient simulation of the space radiation environment and reduced the cost of ground-based experiments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-06-30
- Publication Date
- 2026-03-17
AI Technical Summary
Existing single-particle-source simulation methods cannot accurately reproduce the radiation environment in space, resulting in significant errors in the simulation results of electronic component performance, which cannot meet the design requirements of long-life and high-reliability spacecraft.
A multi-particle source simulation method was adopted, including particle sources in the form of combinations of protons, electrons and gamma particles. A semiconductor detector model was constructed using the Monte Carlo method to simulate the real space environment and calculate the trend of changes in the energy spectrum of primary collision atoms.
It improves the representativeness and accuracy of simulation results, reduces the cost of ground simulation tests of space radiation environment effects, and has important engineering and scientific significance, enabling better research on semiconductor displacement damage.
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Figure CN115186565B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of satellite space environment analysis technology, and in particular to a method for calculating PKA energy spectrum based on multi-particle source simulation. Background Technology
[0002] With the development of science and technology, my country's aerospace industry has made great strides, and various types of spacecraft are now closely related to our lives and safety. During their on-orbit service, electronic components used in spacecraft are inevitably subjected to various influences from the space environment, including particle radiation and temperature. For electronic components, particle radiation is the most fatal environmental factor; early spacecraft have repeatedly failed due to radiation damage. Space particle radiation can cause performance degradation in electronic components, leading to a shortened satellite lifespan and resulting in significant losses. Different types of charged particles simultaneously act on key materials and electronic components used in spacecraft, leading to comprehensive space environmental effects, especially ionization / displacement effects.
[0003] To meet the design requirements of long-life, high-reliability spacecraft, the performance degradation of radiation-sensitive materials in electronic components during orbit has always been a major concern for designers. Currently, the primary method for obtaining data on the on-orbit performance degradation of electronic components is through ground-based simulation experiments of the space radiation environment effects. Different types of materials exhibit varying sensitivities to ionization and displacement damage; insulators are primarily sensitive to ionization damage, while semiconductors are primarily sensitive to displacement damage. Furthermore, some space particles primarily cause ionization damage, some primarily cause displacement damage, and some can cause both. When displacement damage occurs, it affects the minority carrier lifetime and mobility within the material, leading to significant performance degradation in electronic components. Existing simulation methods often employ a single particle source incident on the material to analyze the interaction between particles and the electronic components during on-orbit missions, failing to recreate the radiation environment in space. Summary of the Invention
[0004] To address the problems in the prior art, this invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation.
[0005] To achieve the above objectives, the present invention is specifically implemented through the following techniques:
[0006] This invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation, comprising the following steps:
[0007] S1. Construct a semiconductor detector model based on the Monte Carlo method;
[0008] S2. Set up a particle source, wherein the particle source includes multiple forms, and at least one form of the particle source includes two or more types of high-energy particles;
[0009] S3. Based on the silicon wafer thickness of the semiconductor detector model, perform a real space environment simulation and calculate the trend of primary collision atom (PKA) energy spectrum changes caused by different forms of particle source irradiation under the same incident structure and the same model.
[0010] Furthermore, in step S2, the high-energy particles include protons, electrons, neutrons, or gamma particles.
[0011] Furthermore, in step S2, the particle source includes the following three forms: a) to c):
[0012] a) Proton;
[0013] b) Combined particles formed by protons and electrons;
[0014] c) Combined particles consisting of protons, electrons, and gamma particles.
[0015] Furthermore, in step S2, the different types of high-energy particles have the same energy.
[0016] Furthermore, in step S2, when the particle source is the proton, the energy of the proton is 20 MeV;
[0017] When the particle source is a combination of protons and electrons, the energies of both protons and electrons are 20 MeV;
[0018] When the particle source is a combination of protons, electrons, and γ particles, the energies of the protons, electrons, and γ particles are all 20 MeV.
[0019] Furthermore, in step S3, when simulating the real space environment, the particle source is incident from the center of the silicon wafer.
[0020] Furthermore, in step S3, the simulation of the real space environment is performed while keeping the energy of the high-energy particles fixed and changing the form of the particle source.
[0021] Furthermore, the specific operation of step S3 is as follows:
[0022] The first step is to use the protons as the particle source to simulate the real space environment and obtain the primary collision atomic energy spectrum when the protons are irradiated.
[0023] The second step involves using the combined particles formed by the protons and electrons as the particle source to irradiate the same incident structure and the same model, simulating the real space environment, and obtaining the primary collision atomic energy spectrum when the combined particles formed by the protons and electrons are irradiated.
[0024] The third step involves using the combined particles formed by the protons, electrons, and γ particles as the particle source to irradiate the same incident structure and the same model, simulating the real space environment, and obtaining the primary collision atomic energy spectrum when the combined particles formed by the protons, electrons, and γ particles are irradiated.
[0025] The fourth step involves qualitatively analyzing the changes in the number of PKA energy spectra caused by different types of high-energy particles at a fixed energy level, based on the statistical information on the number of PKA energy spectra of the three types of particle sources, and obtaining the trend of PKA energy spectrum changes under the three types of particle sources.
[0026] Furthermore, the above-described methods can be applied to materials, devices, electronic systems, and structures.
[0027] This invention utilizes particle sources comprising various combinations of high-energy particles as incident sources and compares the PKA energy spectrum variation trends under different particle sources. This facilitates the selection of particle sources and their PKA energy spectrum information that better suit the device's mission environment, enabling better simulation of the impact of comprehensive space radiation environment factors. Consequently, it improves the representativeness of simulation results for the effects of comprehensive space radiation environment, possessing significant engineering value and scientific significance for research on semiconductor displacement damage based on ionizing radiation processes. Furthermore, the method of this invention is simple, easy to operate, and highly feasible, significantly reducing the cost of ground-based simulation experiments of space radiation environment effects. This is of great importance for ground-based simulation experiments and research on the space environment effects of materials and devices, as well as subsequent defect evolution of materials. Attached Figure Description
[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0029] Figure 1 This is the PKA energy spectrum of Embodiment 1 of the present invention when irradiated with protons as the particle source;
[0030] Figure 2 This is the PKA energy spectrum of Embodiment 1 of the present invention when a combination of protons and electrons is used as a particle source for irradiation;
[0031] Figure 3 The PKA energy spectrum of Embodiment 1 of the present invention is obtained when a combination of protons, electrons and gamma particles is used as a particle source for irradiation. Detailed Implementation
[0032] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. Furthermore, the terms "comprising," "containing," and "having" are not restrictive and can include other steps and components that do not affect the results. Unless otherwise specified, all materials, equipment, and reagents are commercially available.
[0033] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0034] The space environment contains various particle types, such as protons, electrons, and gamma rays (also called gamma particles). Using single-particle irradiation to analyze the interaction between particles and electronic components during on-orbit missions cannot accurately reproduce the radiation environment in space, often resulting in significant errors in simulation calculations. This invention combines multiple particle sources for irradiation, comparing the impact of different sources on simulation results. It reveals that multiple particle sources are necessary, and selecting a combination of multiple particles can more realistically simulate the space environment as a foundation for subsequent research. This has significant engineering and scientific value for realizing the fundamental theory and evaluation methods of the interaction between the space environment and materials or electronic components, revealing the basic laws of performance degradation of materials or electronic components in space, and the physical essence of various comprehensive effects of the space environment.
[0035] The methods of this invention can be applied to materials, devices, electronic systems, and structures.
[0036] This invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation, comprising the following steps:
[0037] S1. Construct a semiconductor detector model based on the Monte Carlo method;
[0038] S2. Set up a particle source, wherein the particle source includes multiple forms, and at least one form of the particle source includes two or more types of high-energy particles;
[0039] Specifically, the high-energy particles include protons, electrons, neutrons, or gamma particles.
[0040] To reproduce the real environment in space as accurately as possible, the particle source includes the following three forms: a) to c)
[0041] a) Proton;
[0042] b) Combined particles formed by protons and electrons;
[0043] c) Combined particles consisting of protons, electrons, and gamma particles.
[0044] When two or more types of high-energy particle combinations are used as particle sources, the energy of the different types of high-energy particles is the same. For example, when the particle source is a proton, the energy of the proton is 20 MeV; when the particle source is a combination of protons and electrons, the energy of both protons and electrons is 20 MeV; when the particle source is a combination of protons, electrons, and gamma particles, the energy of all protons, electrons, and gamma particles is also 20 MeV.
[0045] S3. Simulate the real space environment based on the silicon wafer thickness of the semiconductor detector, and calculate the trend of primary collision atomic energy spectrum changes caused by different forms of particle source irradiation under the same incident structure and the same model.
[0046] The primary knock-on atom (PKA) energy spectrum mentioned above refers to the energy distribution of primary knock-on atoms, which refers to the distribution of atoms with different energies.
[0047] Preferably, in step S3, when simulating a real space environment, the particle source is incident from the center of the silicon wafer.
[0048] Preferably, in step S3, under the condition of fixing the energy of high-energy particles and changing the form of particle source, a real space environment simulation is performed to calculate the trend of PKA energy spectrum change caused by irradiation by different forms of particle source under the same incident structure and the same model.
[0049] Taking the aforementioned multiple particle sources including forms a)-c) as an example, the specific operation of step S3 is as follows:
[0050] The first step is to use protons as the particle source to simulate the real space environment and obtain the PKA energy spectrum during proton irradiation.
[0051] The second step involves using a combination of protons and electrons as a particle source to irradiate the same incident structure and model, simulating the real space environment, and obtaining the PKA energy spectrum when irradiated by the combination of protons and electrons.
[0052] The third step involves using a combination of protons, electrons, and gamma particles as a particle source to irradiate the same incident structure and model, simulating the real space environment, and obtaining the PKA energy spectrum when irradiated by the combination of protons, electrons, and gamma particles.
[0053] The fourth step involves qualitatively analyzing the changes in the number of PKAs caused by different types of high-energy particles at a fixed energy level, based on the statistical data of the PKA energy spectra from the three types of particle sources. This yields the trends in PKA energy spectrum changes for the three types of particle sources. By extracting the PKA energy spectra from more suitable particle sources, the data can be used as input for subsequent defect evolution processing.
[0054] It is understood that although the first, second, and third steps are specified in order in the embodiments of the present invention, this order specification is only for descriptive purposes, and the three steps do not have a substantial sequential relationship. For example, the first step can be performed first, followed by the third step, and then the second step; or the second step can be performed first, followed by the first step, and then the third step; or the first, second, and third steps can be performed simultaneously.
[0055] Preferably, when simulating a real space environment, the types of high-energy particles in the particle source gradually increase. Specifically, the first, second, and third steps mentioned above are performed sequentially to better extract the PKA energy distribution changes caused by different types of particle sources.
[0056] Key materials and devices used in spacecraft are primarily affected by the combined space radiation environment, including protons, electrons, and heavy ions of varying energies. This invention utilizes particle sources with combinations of high-energy particles and compares the PKA energy spectrum trends under different particle sources. This helps select particle sources and their PKA energy spectrum information that better suit the device's mission environment, enabling better simulation of the effects of combined space radiation environment factors. This improves the representativeness of simulation results for the combined space radiation environment effects, and has significant engineering and scientific value for research on semiconductor displacement damage based on ionizing radiation processes. Furthermore, the method of this invention is simple, easy to operate, and highly feasible, significantly reducing the cost of ground-based simulation experiments of space radiation environment effects. This is of great significance for ground-based simulation experiments and research on the space environment effects of materials and devices, as well as for subsequent defect evolution of materials.
[0057] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Experimental methods in the following embodiments, unless otherwise specified, are generally performed according to the conditions recommended by the manufacturer.
[0058] Example 1
[0059] A method for calculating the PKA energy spectrum based on multi-particle source simulation includes the following steps:
[0060] S1. Construct a semiconductor detector model based on the Monte Carlo method;
[0061] S2. Set up a particle source, wherein the particle source includes the following three forms a) to c):
[0062] a) A proton with an energy of 20 MeV;
[0063] b) A combined particle consisting of a proton with energy of 20 MeV and an electron with energy of 20 MeV;
[0064] c) A combined particle consisting of a proton with energy of 20 MeV, an electron with energy of 20 MeV, and a gamma particle with energy of 20 MeV;
[0065] S3. Under the condition of fixed high-energy particle energy and changing particle source form (gradually increasing the types of high-energy particles), a real space environment simulation is performed based on the silicon wafer thickness of the semiconductor detector. The particle source is incident from the center of the silicon wafer. Calculate the PKA energy spectrum change trend caused by irradiation from different forms of particle sources under the same incident structure and the same model; the details are as follows:
[0066] The first step involves using protons as the particle source to simulate a real space environment and obtain the PKA energy spectrum during proton irradiation (see [link]). Figure 1 );
[0067] The second step involves using a combination of protons and electrons as a particle source to irradiate the same incident structure and model, performing a real space environment simulation to obtain the PKA energy spectrum during proton and electron combination particle irradiation (see [link]). Figure 2 );
[0068] The third step involves using a combination of protons, electrons, and gamma particles as a particle source to irradiate the same incident structure and model, performing a real space environment simulation to obtain the PKA energy spectrum of the combined proton, electron, and gamma particle irradiation (see [link to PKA simulation]). Figure 3 );
[0069] The fourth step involves qualitatively analyzing the changes in the number of PKA energy spectra caused by different types of high-energy particles at a fixed energy level, based on the statistical information of the PKA energy spectrum of the three types of particle sources. This analysis yields the trend of PKA energy spectrum changes under the three types of particle sources, which is used to evaluate the input of more suitable particle sources for subsequent defect evolution processing.
[0070] Depend on Figure 1 It can be seen that when the proton irradiation energy is 20 MeV, the generated PKA energy is mainly within 1 MeV, and as can be seen from the figure, its energy can be extended to 3 MeV. Figure 2It can be seen that when a combination of protons and electrons with energies of 20 MeV is used as a particle source to irradiate a silicon wafer, its PKA energy spectrum distribution is significantly different from that of a PKA energy spectrum distribution using only protons as a particle source. However, it can still be observed that the PKA energy is mainly within 1 MeV. Figure 3 It can be seen that when a silicon wafer is irradiated with a combination of protons (energy 20 MeV), electrons (energy 20 MeV), and gamma particles (energy 20 MeV), the overall number of PKA particles decreases, but the trend is similar to... Figure 2 Similarly, this is mainly because the involvement of gamma particles does not lead to significant primary collisional atomic phenomena. These results demonstrate that using combined multi-particle sources can more realistically simulate the space environment, making the results of ground-based simulations of radiation environment effects more realistic and reliable.
Claims
1. A method for simulating PKA energy spectrum based on multi-particle source, characterized in that, The method comprises the following steps: S1, constructing a semiconductor detector model based on a Monte Carlo method; S2, setting a particle source, the particle source comprises multiple forms, at least one form of the particle source comprises two or more types of high-energy particles; S3, performing real space environment simulation according to the thickness of the silicon wafer of the semiconductor detector model, calculating the change trend of the primary collision atom energy spectrum caused by irradiation of the particle source in different forms under the same incident structure and the same model, including performing real space environment simulation according to the thickness of the silicon wafer of the semiconductor detector model in the case of fixing the energy of high-energy particles and changing the form of the particle source, the particle source is incident from the center of the silicon wafer, calculating the change trend of the primary collision atom energy spectrum caused by irradiation of the particle source in different forms under the same incident structure and the same model; wherein, the case of changing the form of the particle source is gradually increasing the types of high-energy particles.
2. The method of claim 1, wherein, In step S2, the high-energy particles include protons, electrons, neutrons or gamma particles.
3. The method of claim 1, wherein, In step S2, the particle source includes the following a) to c) three forms: a) protons; b) combined particles formed by protons and electrons; c) combined particles formed by protons, electrons and gamma particles.
4. The method of claim 3, wherein, In step S2, the energy of different types of high-energy particles is the same.
5. The method of claim 4, wherein, In step S2, when the particle source is the proton, the energy of the proton is 20 MeV; When the particle source is the combined particles formed by the protons and the electrons, the energy of the protons and the electrons is 20 MeV; When the particle source is the combined particles formed by the protons, the electrons and the gamma particles, the energy of the protons, the electrons and the gamma particles is 20 MeV.
6. The method of claim 3, wherein, In step S3, the real space environment simulation is performed in the case of fixing the energy of high-energy particles and changing the form of the particle source.
7. The method of claim 6, wherein, The specific operation of step S3 is: First, use the protons as the particle source to perform the real space environment simulation, and obtain the primary collision atom energy spectrum when the protons are irradiated; Second, use the combined particles formed by the protons and the electrons as the particle source to irradiate the same incident structure and the same model, perform the real space environment simulation, and obtain the primary collision atom energy spectrum when the combined particles formed by the protons and the electrons are irradiated; Third, use the combined particles formed by the protons, the electrons and the gamma particles as the particle source to irradiate the same incident structure and the same model, perform the real space environment simulation, and obtain the primary collision atom energy spectrum when the combined particles formed by the protons, the electrons and the gamma particles are irradiated; Fourth, qualitatively analyze the change of the number of primary collision atoms caused by different types of high-energy particles under fixed energy according to the number information of the primary collision atom energy spectrum in the first step to the third step, and obtain the change trend of the primary collision atom energy spectrum under the three forms of the particle source.
8. The method according to any one of claims 1 to 7, characterized in that, When performing the real space environment simulation, the particle source is incident from the center of the silicon wafer.
9. The method according to any one of claims 1 to 7, characterized in that, The method can be applied to materials, devices, electronic systems, and structures.