Electrode, method of manufacturing the same, and electronic device

Abstract

This application provides an electrode comprising a first electrode material layer and a second electrode material layer disposed on the surface of the first electrode material layer. The first electrode material layer is made of titanium carbide doped with a metal, and the second electrode material layer is made of titanium carbonitride doped with the metal, wherein the doping metal includes at least one of aluminum and copper. The electrode provided by this application exhibits excellent corrosion resistance and low contact resistance. This application also provides a method for fabricating the electrode and an electronic device thereof.

Description

Technical Field

[0001] This application belongs to the field of electronic product technology, specifically relating to electrodes and their preparation methods, and electronic devices. Background Technology

[0002] With the continuous development of technology, electronic devices such as smartwatches and smart bracelets are emerging in large numbers, and more and more of these devices have the function of detecting various physiological parameters such as heart rate, blood oxygen, sleep, and stress. Currently, these electronic devices are often used in direct contact with the user's skin for detection, which can lead to corrosion from sweat on the skin's surface over time, seriously affecting the lifespan of the electronic devices. Summary of the Invention

[0003] In view of this, this application provides an electrode, a method for preparing the same, and an electronic device thereof.

[0004] In a first aspect, this application provides an electrode, including a first electrode material layer and a second electrode material layer disposed on the surface of the first electrode material layer. The first electrode material layer is made of titanium carbide with a doped metal, and the second electrode material layer is made of titanium carbonitride with the doped metal, wherein the doped metal includes at least one of aluminum and copper.

[0005] Secondly, this application provides a method for preparing an electrode, comprising: forming a first electrode material layer and a second electrode material layer by deposition, wherein the second electrode material layer is disposed on the surface of the first electrode material layer to obtain an electrode, wherein the material of the first electrode material layer includes titanium carbide having a doped metal, and the material of the second electrode material layer includes titanium carbonitride having the doped metal, wherein the doped metal includes at least one of aluminum and copper.

[0006] Thirdly, this application provides an electronic device, including an electronic device body, the electronic device body including electrodes, the electrodes including a first electrode material layer and a second electrode material layer disposed on the surface of the first electrode material layer, the first electrode material layer being made of titanium carbide having a doped metal, the second electrode material layer being made of titanium carbonitride having the doped metal, the doped metal including at least one of aluminum and copper.

[0007] The electrode provided in this application uses titanium nitride and titanium carbonitride, which exhibit low electrochemical noise. The use of aluminum and / or copper-doped titanium carbide and titanium carbonitride increases carrier concentration, helping to reduce the contact impedance at the electrode-skin interface. Furthermore, the doped metals form intermetallic compounds with the titanium carbide and titanium carbonitride, reducing the electrode's resistivity. An amorphous carbon phase forms at the grain boundaries of the second electrode material layer, refining the grains and improving the electrode surface's corrosion resistance. The electrode provided in this application exhibits excellent corrosion resistance and low contact impedance. The preparation method of this electrode is simple, convenient, and yields a high production rate. Electronic devices equipped with this electrode demonstrate high detection accuracy and reliability, which is beneficial for the use of electronic equipment. Attached Figure Description

[0008] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the embodiments of this application will be described below.

[0009] Figure 1 This is a schematic diagram of the structure of an electronic device provided in one embodiment of this application.

[0010] Figure 2 A schematic diagram of the structure of an electronic device provided in another embodiment of this application.

[0011] Figure 3 This is a schematic diagram of the structure of the main body of an electronic device provided in one embodiment of this application.

[0012] Figure 4 for Figure 3 A schematic diagram of the cross section of AA.

[0013] Figure 5 This is a cross-sectional schematic diagram of an electrode provided in one embodiment of this application.

[0014] Figure 6 A cross-sectional schematic diagram of an electrode provided for another embodiment of this application.

[0015] Figure 7 The equivalent circuit diagram for fitting electrochemical impedance spectroscopy to the electrode is shown.

[0016] Figure 8 This is a flowchart illustrating a method for preparing an electrode according to an embodiment of this application.

[0017] Figure 9 A flowchart illustrating the method for preparing the main body of an electronic device according to an embodiment of this application.

[0018] Figure 10 The image shows the X-ray diffraction pattern of the electrode prepared in Example 1.

[0019] Figure 11 The N1s energy spectrum of the electrode prepared in Example 1 is shown.

[0020] Figure 12 This is an electron microscope image of the electrode surface prepared in Example 1.

[0021] Figure 13 This is an electron microscope image of the cross-section of the electrode obtained in Example 1.

[0022] Figure 14 This is an electron microscope image of the electrode surface obtained in Example 2.

[0023] Figure 15 This is an electron microscope image of the cross-section of the electrode obtained in Example 2.

[0024] Label Explanation:

[0025] Electrode-10, first electrode material layer-11, second electrode material layer-12, substrate-13, housing-20, protrusion-21, display screen-30, electronic device body-100, wearable part-200, first wearable structure-201, second wearable structure-202, electronic device-300. Detailed Implementation

[0026] The following are preferred embodiments of this application. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principles of this application, and these improvements and modifications are also considered to be within the scope of protection of this application.

[0027] The following disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0028] The electronic device 300 in this application embodiment can be a device for detecting physiological parameters of a target object; physiological parameters may include, but are not limited to, heart rate, blood oxygen, sleep, pressure, respiration, and exercise. Specifically, the electronic device 300 can acquire signals through electrodes 10, and then obtain the required physiological parameters through the participation of other electronic components. Of course, the electronic device 300 may also have various functions such as making and receiving calls, sending and receiving text messages, taking photos, recording videos, playing music, making payments, identity verification, monitoring, emergency calls, reminders, positioning, navigation, calibration, and intelligent anti-loss, which are not listed here. Specifically, the electronic device 300 may include, but is not limited to, mobile phones, tablets, laptops, MP3 players, MP4 players, GPS navigators, digital cameras, watches (such as smartwatches), bracelets (such as smart bracelets), anklets (such as smart ankle bracelets), rings (such as smart rings), and glasses (such as smart glasses).

[0029] In one embodiment of this application, the electronic device 300 can be a wearable device, such as a watch, bracelet, anklet, ring, or glasses, thereby making it more convenient to use. Please refer to [link to relevant documentation]. Figure 1 This is a schematic diagram of the structure of an electronic device 300 provided in one embodiment of this application; please refer to [link / reference]. Figure 2 This is a schematic diagram of the structure of an electronic device 300 provided in another embodiment of this application, wherein the electronic device 300 includes an electronic device body 100, and the functions of the electronic device 300 are realized through the electronic device body 100. Figure 1 and Figure 2 The electronic devices 300 shown are smartwatches and smart bracelets. Structural diagrams of other types of electronic devices 300 are not shown one by one.

[0030] In this embodiment, the electronic device body 100 includes electrodes 10 for signal acquisition to detect physiological parameters of the target object. It is understood that the number of electrodes 10 on the electronic device body 100 can be one or more, the specific number being set according to detection needs, and the shape of the electronic device body 100 being selected as needed. Please refer to [link to relevant documentation]. Figure 3 This is a schematic diagram of the structure of an electronic device body 100 provided in one embodiment of this application. The electronic device body 100 may include a housing 20, and electrodes 10 may be disposed on the surface of the housing 20. Specifically, in order to achieve contact between the electrodes 10 and the target object, the electrodes 10 need to be disposed on the outer surface of the housing 20. In one embodiment, the material of the housing 20 includes at least one of glass, plastic, metal, and ceramic. The housing 20 made of the above-mentioned materials can not only provide good support for the electrodes 10, but also ensure the structural strength and performance of the electronic device body 100. Specifically, the material of the housing 20 may be, but is not limited to, glass, stainless steel, titanium alloy, etc. In one embodiment, please refer to... Figure 3The housing 20 may have a protrusion 21, and the electrode 10 is disposed on the surface of the protrusion 21, which is more conducive to the contact between the electrode 10 and the target object for signal acquisition. Specifically, the cross-section of the protrusion 21 may be, but is not limited to, a circle, an ellipse, a rectangle, a rounded rectangle, or an irregular shape.

[0031] Please see Figure 4 ,for Figure 3 The cross-sectional diagram of AA shows that the main body 100 of the electronic device may include a display screen 30, which is connected to the housing 20. The display screen 30 may display, but is not limited to, the obtained physiological parameter values. The connection between the display screen 30 and the housing 20 forms a receiving space for accommodating electronic components. Specifically, the display screen 30 may be a touch screen, and its shape may be, but is not limited to, circular, elliptical, near-circular, or rounded rectangle. Alternatively, the electronic device 300 may not have a display screen 30; for example, the housing 20 may have a receiving space for accommodating electronic components.

[0032] In one embodiment of this application, the electronic device body 100 may further include a circuit board and a control motherboard, which are disposed within the accommodating space of the electronic device body 100. It is understood that this accommodating space may be formed by the housing 20, or it may be formed jointly by the housing 20 and the display screen 30. Further, the electrodes 10 are connected to the control motherboard via the circuit board. Specifically, the electronic device 300 can perform ECG (Electrocardiogram) detection on a target object. When the target object wears the electronic device 300, the electrodes 10 of the electronic device 300 can contact the target object's skin, such as the wrist, arm, ankle, or neck, and achieve ECG detection through cooperation with other electronic components in the electronic device body 100, obtaining parameters such as the target object's heart rate. For example, the electrical signals related to the physiological parameters collected by the electrodes 10 are transmitted to the control motherboard via the circuit board, and the control motherboard generates an ECG based on these electrical signals. Further, the ECG or physiological parameters such as heart rate can be displayed on the display screen 30. The above only exemplifies one process for obtaining physiological parameters; of course, other processes can also be used to obtain the required physiological parameters, and this is not limited to this.

[0033] In one embodiment of this application, the electronic device body 100 may further include at least one sensor. The sensor can be configured to sense one or more types of parameters, including but not limited to pressure, light, heat, movement, relative motion, etc. For example, the sensor may include a pressure transducer, a light or optical sensor, a thermal sensor, a position sensor, an accelerometer, a gyroscope, a magnetometer, etc. By setting up the sensor, it can be used in conjunction with the signal information collected by the electrode 10 to enrich the physiological parameters of the target object; for example, the motion trajectory of the target object and the heart rate changes during movement can be obtained after processing by the signals collected by the position sensor and the electrode 10.

[0034] Please see Figure 1 The electronic device 300 may also have a wearable part 200, which is connected to the main body 100 of the electronic device. By providing the wearable part 200, the electronic device 300 is worn on a target object, such as the target object's hand, head, feet, neck, etc., thereby obtaining a wearable device. Specifically, the wearable part 200 can be a mechanical structural component or can be adhesive, thereby allowing the electronic device 300 to be worn on the target object; for example, the wearable part 200 can be, but is not limited to, a watch strap or wristband. In one embodiment, the material of the wearable part 200 may include at least one of metal, flexible plastic, and fiber materials. Please refer to [link to relevant documentation]. Figure 2 The wearable part 200 may include a first wearable structure 201 and a second wearable structure 202, which are respectively connected to the main body 100 of the electronic device. Specifically, the ends of the first wearable structure 201 and the second wearable structure 202 may be provided with fastening members to connect the first wearable structure 201 and the second wearable structure 202; for example, the fastening members are engaged when the electronic device 300 is worn, and the electronic device 300 can be removed by opening the fastening members. This application does not limit the material, structure, setting method, or shape of the wearable part 200, as long as it can securely fix the electronic device 300 to the target object.

[0035] In traditional methods, the most commonly used electrocardiogram (ECG) electrodes for monitoring are Ag / AgCl electrodes with conductive gel. These are wet electrodes, offering a high signal-to-noise ratio. However, the conductive gel is irritating to the skin and dries out gradually, affecting ECG monitoring. The electronic device 300 provided in this application can detect the physiological parameters of a target object. The electrode 10 in the electronic device 300 is a biological dry electrode, eliminating the need for conductive gel and enabling signal acquisition. Its overall structure is also more compact and convenient to use. Because dry electrodes do not require conductive gel, they rely on trace amounts of sweat or ambient moisture as electrolytes when in contact with the skin. However, gaps exist between the electrode and the skin, resulting in high contact impedance and a low signal-to-noise ratio. Furthermore, the direct contact between the dry electrode and the skin allows sweat on the skin surface to corrode the dry electrode and generate electrochemical noise that interferes with signal acquisition. For example, aluminum or stainless steel dry electrodes can corrode after prolonged contact with sweat, generating electrochemical noise.

[0036] Therefore, this application provides an electrode, please refer to [link / reference]. Figure 5 This is a cross-sectional schematic diagram of an electrode provided in one embodiment of this application. The electrode 10 includes a first electrode material layer 11 and a second electrode material layer 12 disposed on the surface of the first electrode material layer 11. The first electrode material layer 11 is made of titanium carbide with a doped metal, and the second electrode material layer 12 is made of titanium carbonitride with a doped metal, wherein the doped metal includes at least one of aluminum and copper. When the electrode contains a titanium film, the corrosion noise problem can be solved to a certain extent; however, the high degree of interface oxidation easily leads to signal drift. When the electrode contains a titanium oxide film layer, low-frequency signals are easily lost, affecting the detection accuracy. When the electrode contains a titanium nitride film layer, lower noise can be obtained, but the columnar pores on the surface of the titanium nitride film layer can cause sweat, electrolyte, etc. to seep into the electrode, and oxidation problems can also occur, affecting the performance of the electrode. The electrode 10 provided in this application uses titanium nitride and titanium carbonitride, which have lower electrochemical noise. At the same time, it uses aluminum and / or copper-doped titanium carbide and titanium carbonitride, and the doped metal ions replace titanium ions (Ti). 4+ The generation of oxygen vacancies provides electrons, thereby increasing the carrier concentration and helping to reduce the contact impedance at the interface between electrode 10 and skin. Furthermore, the doping metal forms intermetallic compounds with titanium carbide and titanium carbonitride, reducing the resistivity of electrode 10. An amorphous carbon phase (α-C) is formed at the grain boundaries of the second electrode material layer 12. This amorphous carbon forms a composite structure with nanocrystalline titanium nitride. The amorphous carbon refines the grains, thereby improving the corrosion resistance of the electrode 10 surface, avoiding corrosion noise, and improving detection accuracy, which is beneficial to the use of electrode 10. The electrode 10 provided in this application can be used in the aforementioned electronic device 300, improving the detection performance of the electronic device 300 and facilitating its use.

[0037] Please see Figure 6 This is a cross-sectional schematic diagram of an electrode provided in another embodiment of this application. The electrode 10 may further include a substrate 13, with a first electrode material layer 11 disposed between the substrate 13 and the second electrode material layer 12. The substrate 13 can support the first electrode material layer 11 and the second electrode material layer 12. In this embodiment, the material of the substrate 13 may include at least one of glass, plastic, metal, and ceramic. Specifically, the material of the substrate 13 may be, but is not limited to, glass, stainless steel, titanium alloy, etc. In one embodiment of this application, the material of the substrate 13 includes metal. Metals are easily oxidized and corroded. By providing the first electrode material layer 11 and the second electrode material layer 12, the substrate 13 can be protected, and the performance of the electrode 10 can be improved. Specifically, for example, a stainless steel substrate 13 is easily corroded when in contact with sweat for a long time, resulting in corrosion noise and affecting its use. By providing the first electrode material layer 11 and the second electrode material layer 12 on its surface, corrosion can be avoided, thereby avoiding the impact of corrosion noise, improving the service life of the electrode 10 and the accuracy of detection. At this point, the first electrode material layer 11 also serves as a transition and buffer, avoiding the problems of excessive internal stress and easy detachment caused by directly setting the second material layer on the substrate 13, thus improving the overall structural stability of the electrode 10. Of course, the electrode 10 may not require a substrate 13; the first electrode material layer 11 and the second electrode material layer 12 can be directly disposed on the surface of the housing 20, with the housing 20 serving a load-bearing function, eliminating the need for a substrate 13. In one embodiment, the first electrode material layer 11 is disposed between the housing 20 and the second electrode material layer 12.

[0038] In this application, the first electrode material layer 11 is made of titanium carbide doped with a metal, including at least one of aluminum and copper; that is, the first electrode material layer 11 is made of titanium carbide doped with aluminum and / or copper. The provision of the first electrode material layer 11 is beneficial to improving the corrosion resistance of the electrode 10 and reducing the contact resistance of the electrode 10. In one embodiment of this application, the first electrode material layer 11 is made of aluminum-doped titanium carbide (Al-TiC). In another embodiment of this application, the first electrode material layer 11 is made of copper-doped titanium carbide (Cu-TiC). In yet another embodiment of this application, the first electrode material layer 11 is made of titanium carbide doped with both aluminum and copper.

[0039] In this application, the second electrode material layer 12 is made of titanium carbonitride doped with a metal, including at least one of aluminum and copper; that is, the second electrode material layer 12 is made of titanium carbonitride doped with aluminum and / or copper. The provision of the second electrode material layer 12 ensures the excellent corrosion resistance of the electrode 10 and also helps to reduce the contact resistance of the electrode 10. In one embodiment of this application, the second electrode material layer 12 is made of aluminum-doped titanium carbonitride (Al-TiCN). In another embodiment of this application, the second electrode material layer 12 is made of copper-doped titanium carbonitride (Cu-TiCN). In yet another embodiment of this application, the second electrode material layer 12 is made of titanium carbonitride doped with both aluminum and copper. In the embodiments of this application, the surface of the second electrode material layer 12 away from the first electrode material layer 11 is the outer surface of the electrode 10; that is, the corrosion resistance of the electrode 10 is mainly improved by the surface properties of the second electrode material layer 12.

[0040] In this embodiment, the first electrode material layer 11 and the second electrode material layer 12 are made of the same doped metal, resulting in identical materials and similar microstructures. This facilitates the transition between the two layers, reduces stress, and improves adhesion to the substrate 13, ensuring the overall stability of the electrode 10 structure. In one embodiment, the first electrode material layer 11 is made of aluminum-doped titanium carbide, and the second electrode material layer 12 is made of aluminum-doped titanium carbonitride. In another embodiment, the first electrode material layer 11 is made of copper-doped titanium carbide, and the second electrode material layer 12 is made of copper-doped titanium carbonitride. In yet another embodiment, the first electrode material layer 11 is made of titanium carbide doped with both aluminum and copper, and the second electrode material layer 12 is made of titanium carbonitride doped with both aluminum and copper.

[0041] In this embodiment, the content of doped metal in the second electrode material layer 12 is greater than that in the first electrode material layer 11, which is more conducive to improving the surface hardness of the electrode 10, increasing its service life, and also improving the bonding between the first electrode material layer 11 and the second electrode material layer 12. In this embodiment, the content of doped metal in the second electrode material layer 12 is 2.7 at.% to 4.4 at.%; thus, while improving the surface hardness of the electrode 10, it ensures that the electrode 10 has a certain degree of flexibility so that it can better contact the skin during use, thereby improving the accuracy and reliability of detection. Specifically, the content of doped metal in the second electrode material layer 12 can be, but is not limited to, 2.8 at.%, 3.2 at.%, 3.5 at.%, 3.7 at.%, 4 at.%, or 4.2 at.%. In one embodiment, the content of doped metal in the second electrode material layer 12 is 2.7 at.% to 3.5 at.%. Further, the doped metal includes aluminum. In another embodiment, the content of the doped metal in the second electrode material layer 12 is 3.1 at.% to 3.8 at.%. In yet another embodiment, the content of the doped metal in the second electrode material layer 12 is 3.5 at.% to 4.3 at.%.

[0042] In this embodiment, the ratio of titanium to doped metal in the first electrode material layer 11 is 13-16, and the ratio of titanium to doped metal in the second electrode material layer 12 is 3-5. This is beneficial for reducing the resistivity of the electrode 10. Specifically, the ratio of titanium to doped metal in the first electrode material layer 11 can be, but is not limited to, 13, 14, 15, or 16, and the ratio of titanium to doped metal in the second electrode material layer 12 can be, but is not limited to, 3, 3.5, 4, 4.5, or 5.

[0043] In this embodiment, the titanium content on the surface of the second electrode material layer 12 is 9.7 at.%-13.9 at.%, the carbon content is 17.9 at.%-25 at.%, the nitrogen content is 61.9 at.%-65.3 at.%, and the dopant metal content is 2.7 at.%-4.4 at.%. The elemental contents of the second electrode material layer 12 are obtained by X-ray photoelectron spectroscopy. In one embodiment, the titanium content on the surface of the second electrode material layer 12 is 10.1 at.%-12.8 at.%, the carbon content is 19.6 at.%-22.7 at.%, the nitrogen content is 62.8 at.%-64.1 at.%, and the dopant metal content is 2.7 at.%-3.5 at.%.

[0044] In this embodiment, the surface roughness of the second electrode material layer 12 away from the first electrode material layer 11 is 55nm-75nm. This allows for a certain amount of friction between the electrode 10 and the skin, mitigating the influence of motion artifacts to some extent and further improving detection accuracy and reliability. Specifically, the surface roughness of the second electrode material layer 12 away from the first electrode material layer 11 can be, but is not limited to, 55nm, 58nm, 60nm, 63nm, 65nm, 70nm, or 74nm. Further, the surface roughness of the second electrode material layer 12 away from the first electrode material layer 11 can be 55nm-60nm, 59nm-66nm, 60nm-75nm, or 68nm-73nm. In one embodiment of this application, the surface of the second electrode material layer 12 away from the first electrode material layer 11 has multiple protrusions, thereby ensuring the surface roughness of the second electrode material layer 12. In one embodiment, the lateral dimension of the protrusion may be, but is not limited to, 200nm-600nm, such as 200nm, 300nm, 400nm, 500nm or 600nm.

[0045] In this embodiment, the thickness of the first electrode material layer 11 is 0.15 μm-0.25 μm. This thickness of the first electrode material layer 11 further ensures its high adhesion within the electrode 10 and its bonding with the second electrode material layer 12, without excessively increasing the thickness of the electrode 10. Specifically, the thickness of the first electrode material layer 11 can be, but is not limited to, 0.15 μm, 0.16 μm, 0.19 μm, 0.2 μm, 0.22 μm, 0.24 μm, or 0.25 μm. In one embodiment, the thickness of the first electrode material layer 11 is 0.15 μm-0.2 μm. In another embodiment, the thickness of the first electrode material layer 11 is 0.2 μm-0.25 μm.

[0046] In this embodiment, the thickness of the second electrode material layer 12 is 0.45 μm-0.75 μm. This thickness of the second electrode material layer 12 ensures both the electrochemical performance and corrosion resistance of the electrode 10, without excessively increasing the thickness and weight of the electrode 10. Specifically, the thickness of the second electrode material layer 12 can be, but is not limited to, 0.45 μm, 0.5 μm, 0.53 μm, 0.58 μm, 0.6 μm, 0.65 μm, 0.7 μm, or 0.75 μm. In one embodiment, the thickness of the second electrode material layer 12 is 0.45 μm-0.55 μm. In another embodiment, the thickness of the second electrode material layer 12 is 0.6 μm-0.75 μm.

[0047] In this embodiment, the thickness of the second electrode material layer 12 is greater than the thickness of the first electrode material layer 11, which improves the corrosion resistance of the electrode 10. In one embodiment, the thickness ratio of the second electrode material layer 12 to the first electrode material layer 11 is 3-5, which is beneficial for improving the corrosion resistance of the electrode 10 and further reducing contact resistance. Specifically, the thickness ratio of the second electrode material layer 12 to the first electrode material layer 11 can be, but is not limited to, 3, 3.5, 4, 4.5, or 5.

[0048] In this embodiment, the thickness of electrode 10 is 0.6 μm-1 μm. This thin electrode 10 allows for a degree of flexibility, facilitating its adhesion to the skin surface for use. Specifically, the thickness of electrode 10 can be, but is not limited to, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1 μm. In one embodiment, the thickness of electrode 10 can be 0.6 μm-0.8 μm. In another embodiment, the thickness of electrode 10 can be 0.8 μm-1 μm.

[0049] In this embodiment of the application, the hole resistance R of electrode 10 po 22.8 Ω·cm 2 -48.2Ω·cm 2 Charge transfer resistance R ct It is 6.3×10 5 Ω·cm 2 -9.8×10 5 Ω·cm 2 The polarization potential ranges from -246.8 mV to -174.2 mV, and the corrosion current density is 1.84 × 10⁻⁶ mV. -8 A / cm 2 -7.2×10 -8 A / cm 2 The impedance at 10Hz is 811Ω-2030Ω. Specifically, the hole resistance R of electrode 10... po It can be, but is not limited to, 22.8 Ω·cm 2 31.5Ω·cm 2 34.6Ω·cm 2 38.3Ω·cm 2 45.6Ω·cm 2 or 48.2Ω·cm 2 Etc., charge transfer resistance R ct It can be, but is not limited to, 6.8×10 5 Ω·cm 2 7.2×10 5 Ω·cm 2 7.6×10 5 Ω·cm 2 8.3×105 Ω·cm 2 Or 9.5×10 5 Ω·cm 2 The polarization potential can be, but is not limited to, -232mV, -210mV, -196.7mV, -182.4mV, or -174.2mV, and the corrosion current density can be, but is not limited to, 2.1×10⁻⁶. -8 A / cm 2 2.8×10 -8 A / cm 2 4.5×10 -8 A / cm 2 5.9×10 -8 A / cm 2 Or 6.8×10 -8 A / cm 2 The impedance at 10Hz can be, but is not limited to, 811Ω, 965Ω, 1050Ω, 1487Ω, 1739Ω, 1952Ω, or 2030Ω. Under the same conditions, the charge transfer resistance R of the titanium carbonitride layer... ct 1.7×10 6 Ω·cm 2 -2.9×10 6 Ω·cm 2 The electrode 10 provided in this application has superior corrosion resistance and low interfacial impedance. In one embodiment, the performance of the electrode 10 refers to the performance of the film formed by the first electrode material layer 11 and the second electrode material layer 12. In this embodiment, conductive adhesive is used to connect the wires to the substrate 13 of the electrode 10, and insulating adhesive is applied to the surface of the electrode 10, leaving a 1cm × 1cm electrode area. Electrochemical impedance spectroscopy is performed in an electrolytic cell (electrolyte is physiological saline) using a three-electrode method on an electrochemical workstation, with a test frequency range of 0.01Hz-10 Hz. 5 Hz; after testing according to Figure 7 The equivalent circuit shown was fitted with electrochemical impedance using ZVIEW software to obtain the above detection data, where R s R is the resistance of the electrolyte solution. po R is the pore resistance of a thin film, reflecting the ability of the thin film to impede the penetration of electrolyte. ct CPE is the charge transfer resistance caused by the double electron layer between the electrolyte and the thin film. po and CPE dl These are film capacitors and double-layer capacitors, respectively.

[0050] The electrode 10 provided in this application has a first electrode material layer 11 made of titanium carbide with doped metal, and a second electrode material layer 12 made of titanium carbonitride with doped metal, wherein the doped metal includes at least one of aluminum and copper. Titanium nitride and titanium carbonitride can make the electrode 10 have lower electrochemical noise. At the same time, the doping of aluminum and / or copper into the first electrode material layer 11 and the second electrode material layer 12 can replace titanium ions in titanium nitride and titanium carbonitride, thereby generating oxygen vacancies, providing electrons, increasing the carrier concentration, which is beneficial to reducing the contact impedance of the electrode 10. Furthermore, the intermetallic compounds formed by aluminum and / or copper with titanium nitride and titanium carbonitride can reduce the resistivity of the electrode 10. In addition, an amorphous carbon phase (α-C) is formed in the grain boundaries of the second electrode material layer 12. The amorphous carbon and nanocrystalline titanium nitride form a composite structure. The amorphous carbon can refine the grains, thereby improving the corrosion resistance of the electrode 10 surface, avoiding the generation of corrosion noise, and improving the product competitiveness of the electrode 10.

[0051] This application also provides a method for preparing an electrode 10, comprising: forming a first electrode material layer 11 and a second electrode material layer 12 by deposition, wherein the second electrode material layer 12 is disposed on the surface of the first electrode material layer 11 to obtain the electrode 10, wherein the first electrode material layer 11 is made of titanium carbide with a doped metal, and the second electrode material layer 12 is made of titanium carbonitride with a doped metal, wherein the doped metal includes at least one of aluminum and copper. This preparation method is simple and convenient to operate, enabling the industrial production of the electrode 10. Furthermore, this preparation method can produce the electrode 10 in any of the above embodiments, and the electrode 10 exhibits excellent electrochemical performance and high detection accuracy, which is beneficial for its use.

[0052] In this application, electrode 10 is prepared using a deposition method. In this embodiment, deposition includes at least one of physical vapor deposition (PVD) and chemical vapor deposition (CVD). Physical vapor deposition is a method of thin film deposition using physical mechanisms, while chemical vapor deposition utilizes gaseous or vaporous substances to react at the gas phase or gas-solid interface to generate solid deposits. In one embodiment, physical vapor deposition may include vacuum evaporation, sputtering, ion plating, etc. Specifically, sputtering may include DC sputtering, AC sputtering, reactive sputtering, and magnetron sputtering, etc., which can be further divided into balanced magnetron sputtering and unbalanced magnetron sputtering depending on the magnetic field configuration of the magnetron cathode. In another embodiment, chemical vapor deposition may include plasma chemical vapor deposition, thermochemical vapor deposition, photochemical vapor deposition, etc. Electrodes 10 prepared by the above deposition methods exhibit strong internal bonding and high reliability.

[0053] Please see Figure 8 Here is a flowchart of a method for preparing an electrode according to an embodiment of this application, including:

[0054] S101: Deposit a first electrode material layer on the substrate surface. The first electrode material layer is made of titanium carbide with a doped metal, which includes at least one of aluminum and copper.

[0055] S102: Deposit a second electrode material layer on the surface of the first electrode material layer away from the substrate. The material of the second electrode material layer includes titanium carbonitride with doped metal, to obtain an electrode.

[0056] In this application, a substrate 13 is used as a carrier layer, and a first electrode material layer 11 and a second electrode material layer 12 are deposited on its surface to obtain the electrode 10. Specifically, the deposition method mentioned above can be used to prepare the first electrode material layer 11 and the second electrode material layer 12. In this embodiment, the substrate 13 is further cleaned before deposition. Furthermore, a polishing process is performed before cleaning the substrate 13 to improve the surface smoothness of the substrate 13, which is beneficial to the preparation and bonding of the first electrode material layer 11. Specifically, the substrate 13 can be polished with a super mirror finish, and after polishing, it can be ultrasonically cleaned, such as for 15-20 minutes, in water or in an ethanol solution.

[0057] In this embodiment, the substrate 13 is further subjected to argon ion cleaning before deposition. Specifically, the surface of the substrate 13 is cleaned and decontaminated by bombarding it with argon ions. In one embodiment of this application, the vacuum degree is 2.5 × 10⁻⁶. - 3 Pa -2.7×10 -3 The substrate 13 is bombarded for 5-20 minutes under the following conditions: a bias voltage of -450V to -550V, an argon ion flow rate of 15 sccm to 25 sccm, and a pressure of Pa. Argon ion bombardment not only further cleans the substrate 13 but also roughens its surface, increasing the bonding area between the substrate and the substrate 13. This improves the bonding and wetting properties between the substrate 13 and the first electrode material layer 11, thereby promoting the overall stability of the electrode 10 structure. Specifically, the argon ion flow rate can be, but is not limited to, 15 sccm, 16 sccm, 19 sccm, 20 sccm, 23 sccm, or 25 sccm, and the bombardment time can be, but is not limited to, 5 minutes, 8 minutes, 10 minutes, 12 minutes, 15 minutes, 17 minutes, or 20 minutes. In one embodiment, the vacuum degree is 2.5 × 10⁻⁶. -3 Pa -2.65×10 -3The substrate 13 was bombarded for 5-10 minutes under the following conditions: Pa, negative bias voltage of substrate 13 of -480V to -520V, and argon ion flow rate of 17sccm-22sccm. In another embodiment, the substrate 13 was bombarded under the following conditions: vacuum degree of 2.6×10⁻⁶. -3 Pa -2.7×10 -3 The substrate 13 was bombarded for 10-20 minutes under the following conditions: Pa, negative bias voltage of substrate 13 of -500V to -550V, and argon ion flow rate of 20sccm-25sccm.

[0058] In this application, the substrate 13 can rotate during the deposition process, thereby improving the uniformity of the film deposited on the surface of the substrate 13. In the embodiments of this application, the rotational speed of the substrate 13 can be 3 rpm / min to 10 rpm / min. Specifically, the rotational speed of the substrate 13 can be, but is not limited to, 3 rpm / min, 4 rpm / min, 5 rpm / min, 6 rpm / min, 7 rpm / min, 8 rpm / min, or 9 rpm / min, etc.

[0059] In this embodiment, the purity of the target material used for deposition is greater than or equal to 99%. Further, the purity of the target material used for deposition is greater than or equal to 99.9%. Even further, the purity of the target material used for deposition is greater than or equal to 99.99%. Using a target material with the above-mentioned purity can effectively avoid the influence of impurities on the performance of the electrode 10. The doped metal target can be, but is not limited to, an aluminum target and / or a copper target. Specifically, the purity of the titanium target can be, but is not limited to, 99%, 99.5%, or 99.9%, etc.; the purity of the aluminum target can be, but is not limited to, 99%, 99.5%, or 99.9%, etc.; the purity of the copper target can be, but is not limited to, 99%, 99.5%, or 99.9%, etc.; and the purity of the graphite target can be, but is not limited to, 99%, 99.9%, or 99.99%, etc.

[0060] In this embodiment, the deposition pressure can be 0.1 Pa to 0.5 Pa. Specifically, the deposition pressure can be, but is not limited to, 0.1 Pa, 0.12 Pa, 0.2 Pa, 0.3 Pa, 0.4 Pa, or 0.5 Pa. Further, the deposition pressure can be 0.1 Pa to 0.2 Pa, 0.2 Pa to 0.3 Pa, 0.3 Pa to 0.4 Pa, or 0.4 Pa to 0.5 Pa. In this embodiment, the inert gas flow rate during deposition is 15 sccm to 30 sccm. Introducing inert gas during deposition prevents oxidation, and the inert gas also collidees with particles generated during deposition, affecting film deposition. Using the aforementioned inert gas flow rate ensures a suitable deposition rate and the desired film morphology. Specifically, the flow rate of the inert gas during deposition can be, but is not limited to, 15 sccm, 17 sccm, 20 sccm, 23 sccm, 25 sccm, 28 sccm, or 30 sccm, and the inert gas can be, but is not limited to, argon. In one embodiment, the flow rate of the inert gas during deposition is 15 sccm-20 sccm. In another embodiment, the flow rate of the inert gas during deposition is 20 sccm-25 sccm. In yet another embodiment, the flow rate of the inert gas during deposition is 25 sccm-30 sccm. In this embodiment, a negative bias voltage is applied to the substrate 13 during deposition. Further, the negative bias voltage is -80V to -60V. Specifically, the negative bias voltage can be, but is not limited to, -80V, -75V, -70V, -68V, or -60V.

[0061] In step S101, the first electrode material layer 11 serves as a transition and buffer, alleviating the interfacial performance between the substrate 13 and the second material layer, improving the adhesion performance of the second material layer in the electrode 10, and also helping to reduce the contact resistance of the electrode 10. In this embodiment, the first electrode material layer 11 is deposited using magnetron sputtering. Further, unbalanced magnetron sputtering is used to deposit the first electrode material layer 11. In one embodiment of this application, magnetron sputtering is used to deposit the first electrode material layer 11 using a titanium target, a graphite target, and a doped metal target. Further, the target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-0.6A, and the target power of the doped metal target is 40W-70W. That is, the titanium target and graphite target can be mounted on a DC target position, and the doped metal target can be mounted on a radio frequency target position. Specifically, the target current of the titanium target can be, but is not limited to, 3A, 4A, 5A, or 6A, etc.; the target current of the graphite target can be, but is not limited to, 0.1A, 0.2A, 0.3A, 0.4A, 0.5A, or 0.6A, etc.; and the target power of the doped metal target can be, but is not limited to, 40W, 45W, 50W, 55W, 60W, 65W, or 70W, etc. In this embodiment, the deposition time of the first electrode material layer 11 can be 15min-30min; this ensures bonding with the second electrode material layer 12 while not excessively increasing the thickness of the electrode 10, ensuring that the electrode 10 has a certain degree of flexibility. Specifically, the deposition time of the first electrode material layer 11 can be, but is not limited to, 15min, 17min, 20min, 22min, 25min, 28min, or 30min, etc. Further, the deposition time of the first electrode material layer 11 can be 15min-20min, 20min-25min, or 25min-30min, etc. In one embodiment of this application, magnetron sputtering is used with titanium, graphite, and doped metal targets as targets, and inert gas as the working gas to deposit and form a first electrode material layer 11. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-0.6A, the target power of the doped metal target is 40W-70W, the flow rate of the inert gas is 20sccm-30sccm, and the deposition time is 15min-30min. Furthermore, unbalanced magnetron sputtering is used to deposit the first electrode material layer 11. In one embodiment, magnetron sputtering is used with titanium, graphite and aluminum targets as targets and inert gas as working gas to deposit and form a first electrode material layer 11. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-0.6A, the target power of the aluminum target is 40W-70W, the flow rate of the inert gas is 20sccm-30sccm, the deposition time is 15min-30min, and the material of the first electrode material layer 11 is aluminum-doped titanium carbide.In another embodiment, magnetron sputtering is used with titanium, graphite and copper targets as targets and inert gas as working gas to deposit and form a first electrode material layer 11. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-0.6A, the target power of the copper target is 40W-70W, the flow rate of the inert gas is 20sccm-30sccm, the deposition time is 15min-30min, and the material of the first electrode material layer 11 is copper-doped titanium carbide.

[0062] In S102, depositing a second electrode material layer 12 on the surface of the first electrode material layer 11 helps improve the adhesion of the second electrode material layer 12 in the electrode 10. In this embodiment, magnetron sputtering is used to deposit the second electrode material layer 12. Further, unbalanced magnetron sputtering is used to deposit the second electrode material layer 12. In one embodiment of this application, magnetron sputtering is used, with a titanium target, a graphite target, and a doped metal target as the target materials, and nitrogen gas is introduced to deposit the second electrode material layer 12. Further, the target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-5A, the target power of the doped metal target is 40W-1600W, and the nitrogen gas flow rate is 8sccm-20sccm. That is, the titanium target and graphite target can be mounted on a DC target position, and the doped metal target can be mounted on a radio frequency target position. Specifically, the target current of the titanium target can be, but is not limited to, 3A, 4A, 5A, or 6A, etc.; the target current of the graphite target can be, but is not limited to, 0.1A, 0.5A, 1A, 2A, 3A, 4A, or 5A, etc.; the target power of the doped metal target can be, but is not limited to, 40W, 100W, 500W, 800W, 1000W, 1200W, 1500W, or 1600W, etc.; and the nitrogen flow rate can be, but is not limited to, 8sccm, 10sccm, 13sccm, 15sccm, 17sccm, or 20sccm, etc. In the embodiments of this application, the deposition time of the second electrode material layer 12 can be 60min-90min; this ensures the bonding with the first electrode material layer 11, while not excessively increasing the thickness of the electrode 10, ensuring that the electrode 10 has a certain degree of flexibility. Specifically, the deposition time of the first electrode material layer 11 can be, but is not limited to, 60 min, 65 min, 70 min, 75 min, 80 min, 85 min, or 90 min. Further, the deposition time of the first electrode material layer 11 can be 60 min-70 min, 70 min-80 min, or 80 min-90 min. In one embodiment, the target current of the graphite target and the nitrogen flow rate are gradually increased during the deposition process, which can further alleviate the internal stress of the second electrode material layer 12 and improve adhesion. Specifically, the target current of the graphite target can be gradually increased from 0.1 A to 5 A; the nitrogen flow rate can be gradually increased from 8 sccm to 20 sccm. In another embodiment, the target power of the doped metal target is gradually increased during the deposition process to increase the doped metal content, which is beneficial for more doped metal ions to replace titanium ions, further reducing contact resistance. Furthermore, the target power of the doped metal target can be gradually increased from 40W-70W to 800W-1600W (such as 800W-1000W, 1000W-1300W, 1300W-1500W or 1500W-1800W, etc.).

[0063] In one embodiment of this application, magnetron sputtering is used, employing titanium, graphite, and doped metal targets as targets, and a mixture of inert gas and nitrogen as the working gas, to deposit and form a second electrode material layer 12. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-5A, the target power of the doped metal target is 40W-1600W, the flow rate of the inert gas is 20sccm-30sccm, the flow rate of the nitrogen gas is 8sccm-20sccm, and the deposition time is 60min-90min. Furthermore, unbalanced magnetron sputtering is used to deposit the second electrode material layer 12. In one embodiment, magnetron sputtering is used with titanium, graphite, and aluminum targets as targets and a mixture of inert gas and nitrogen as the working gas to deposit a second electrode material layer 12. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-5A, the target power of the aluminum target is 40W-1600W, the flow rate of the inert gas is 20sccm-30sccm, the flow rate of the nitrogen gas is 8sccm-20sccm, the deposition time is 60min-90min, and the material of the second electrode material layer 12 is aluminum-doped titanium carbonitride. In another embodiment, magnetron sputtering is used with titanium, graphite, and copper targets as targets and a mixture of inert gas and nitrogen as working gas to deposit a second electrode material layer 12. The target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-5A, the target power of the copper target is 40W-1600W, the flow rate of the inert gas is 20sccm-30sccm, the flow rate of the nitrogen gas is 8sccm-20sccm, the deposition time is 60min-90min, and the material of the second electrode material layer 12 is copper-doped titanium carbonitride.

[0064] It is understood that this application describes the preparation method of electrode 10 using magnetron sputtering deposition as an example. Of course, other physical vapor deposition or chemical vapor deposition methods can also be used to prepare the first electrode material layer 11 and the second electrode material layer 12 protected by this application, and these are also within the scope of protection of this application.

[0065] Please see Figure 9 The flowchart illustrates a method for fabricating the main body of an electronic device according to an embodiment of this application, including:

[0066] S201: Deposit a first electrode material layer on the surface of the housing, the first electrode material layer being made of titanium carbide with a doped metal, the doped metal being at least one of aluminum and copper.

[0067] S202: Deposit a second electrode material layer on the surface of the first electrode material layer away from the substrate. The material of the second electrode material layer includes titanium carbonitride with doped metal, thereby obtaining the electronic device body.

[0068] In this application, the electronic device body 10 can be fabricated simultaneously using the above-described preparation method to prepare the electrode 10. By using the housing 20 as a support layer, the use of the substrate 13 is avoided, reducing preparation costs. Simultaneously, the electronic device body 100 can be directly fabricated, improving preparation efficiency. Furthermore, the electrode 10 is directly formed on the housing 20, which helps improve the bonding force between the electrode 10 and the housing 20, ensuring the reliability of the electronic device body 100. The deposition processes of the first electrode material layer 11 and the second electrode material layer 12 in S201 and S202 can be referred to the descriptions in S101 and S102 above, and the treatment of the housing 20 can be referred to the treatment of the substrate 13 in S101 above, which will not be repeated here. In this embodiment, a protective layer is further provided on the surface of the housing 20 before depositing the first electrode material layer 11. By providing a protective layer on the surface of the housing 20, areas where electrode 10 does not need to be deposited are protected. Specifically, a pre-deposition area is formed by providing a protective layer on the surface of the housing 20.

[0069] The effects of the electrodes provided in this application will be further illustrated below through specific embodiments.

[0070] Example 1

[0071] Electrodes were fabricated using an unbalanced magnetron sputtering coating system. The 316L stainless steel substrate was polished to a super mirror finish and then ultrasonically cleaned in an ethanol solution for 15 minutes before being placed in the coating system. Graphite and titanium targets were mounted on the DC target position, and aluminum targets were mounted on the RF target position. The purity of the titanium and aluminum targets was 99.9%, and the purity of the graphite target was 99.99%.

[0072] After clamping the target and the 316L stainless steel substrate, close the sealing cap and evacuate the deposition chamber to a vacuum level of 2.6 × 10⁻⁶. -3 At a substrate bias voltage of -500V, argon ions (flow rate of 15 sccm) were used to bombard the surface of a 316L stainless steel substrate for 20 minutes. The working gas pressure in the deposition chamber was 0.12 Pa, the argon flow rate was 20 sccm, the rotation speed of the 316L stainless steel substrate was 5 rpm / min, the substrate bias voltage was -60V, the target current of the titanium target was 5A, the target current of the graphite target was 0.3A, the target power of the aluminum target was 50W, and the deposition time was 20 minutes, forming an aluminum-doped titanium carbide (Al-TiC) layer on the surface of the 316L stainless steel substrate.

[0073] Nitrogen gas was introduced, with the flow rate gradually increasing from 8 sccm to 12 sccm. The target current of the graphite target was gradually increased from 0.1 A to 5 A, and the target power of the aluminum target was gradually increased from 50 W to 1000 W. Other parameters remained unchanged. After deposition for 90 min, an aluminum-doped titanium carbonitride layer (Al-TiCN) was formed on the aluminum-doped titanium carbide layer, and the electrode was obtained. The surface roughness of the aluminum-doped titanium carbonitride layer was 62.8 nm.

[0074] Please see Figure 10 The image shows the X-ray diffraction pattern of the electrode prepared in Example 1. It can be seen that aluminum doping forms Ti3AlC / Ti3AlN phase, Ti2AlN phase, and a small amount of Ti2N phase in the electrode. Please refer to [link to relevant documentation]. Figure 11 The image shows the N1s energy spectrum of the electrode prepared in Example 1, obtained by X-ray photoelectron spectroscopy analysis. It can be seen that N-Al bonds appear at 395.9 eV, N-Ti bonds at 396.9 eV, and NO bonds at 398.7 eV. Please refer to [link to relevant documentation]. Figure 12 and Figure 13 The images shown are electron microscope (EM) images of the electrode surface and cross-section obtained in Example 1. Elemental analysis of the longitudinal section of the electrode was performed using energy dispersive spectroscopy (EDS). The aluminum-doped titanium carbide layer contained 17.1 at.% carbon, 56 at.% nitrogen, 1.8 at.% aluminum, and 25.1 at.% titanium. The aluminum-doped titanium carbonitride layer contained 19.2 at.% carbon, 65.2 at.% nitrogen, 2.7 at.% aluminum, and 12.9 at.% titanium. The EDS method resulted in some aluminum-doped titanium carbonitride layer being mixed in during the detection of the aluminum-doped titanium carbide layer; therefore, nitrogen was detected in the aluminum-doped titanium carbide layer.

[0075] Example 2

[0076] Electrodes were fabricated using an unbalanced magnetron sputtering coating system. The titanium alloy substrate was polished to a super mirror finish and then ultrasonically cleaned in an ethanol solution for 20 minutes before being placed in the coating system. Graphite and titanium targets were mounted on the DC target position, and aluminum targets were mounted on the RF target position. The purity of the titanium and aluminum targets was 99.9%, and the purity of the graphite target was 99.99%.

[0077] After clamping the target and titanium alloy substrate, close the sealing cap and evacuate the deposition chamber to a vacuum level of 2.5 × 10⁻⁶. -3 The deposition chamber was set to 0.2 Pa, with a substrate bias voltage of -500 V. Argon ions (flow rate of 15 sccm) were used to bombard the titanium alloy substrate surface for 20 min. The working gas pressure in the deposition chamber was 0.2 Pa, the argon flow rate was 15 sccm, the titanium alloy substrate rotation speed was 7 rpm / min, the titanium alloy substrate bias voltage was -70 V, the target current of the titanium target was 5 A, the target current of the graphite target was 0.2 A, the target power of the aluminum target was 50 W, and the deposition time was 20 min. This resulted in the formation of an aluminum-doped titanium carbide layer on the titanium alloy substrate surface.

[0078] Nitrogen gas was introduced, and the flow rate was gradually increased to 10 sccm and kept constant. The target current of the graphite target was gradually increased from 0.2A to 4.5A, and the target power of the aluminum target was gradually increased from 50W to 1200W. Other parameters remained constant. After deposition for 80 minutes, an aluminum-doped titanium carbonitride layer was formed on the aluminum-doped titanium carbide layer, and the electrode was obtained. The surface roughness of the aluminum-doped titanium carbonitride layer was 56.9 nm.

[0079] Please see Figure 14 and Figure 15 The images shown are electron microscope (EM) images of the electrode surface and cross-section obtained in Example 2. Elemental analysis of the longitudinal section of the electrode was performed using energy dispersive spectroscopy (EDS). The aluminum-doped titanium carbide layer contained 14 at.% carbon, 57.1 at.% nitrogen, 1.7 at.% aluminum, and 27.2 at.% titanium. The aluminum-doped titanium carbonitride layer contained 17.9 at.% carbon, 65.1 at.% nitrogen, 3.1 at.% aluminum, and 13.9 at.% titanium.

[0080] Example 3

[0081] The difference from Example 1 is that the aluminum target is replaced with a copper target.

[0082] Comparative Example 1

[0083] The difference from Example 1 is that aluminum doping is not performed.

[0084] Comparative Example 2

[0085] The difference from Example 1 is that aluminum doping is not performed and no titanium carbide layer is provided. The electrode consists of a 316L stainless steel substrate and a titanium carbonitride layer.

[0086] The electrodes prepared in the examples and comparative examples were subjected to the following experiments. Conductive adhesive was used to connect wires to the electrode substrate, and insulating adhesive was applied to the electrode surface, leaving a 1cm × 1cm electrode area. Electrochemical impedance spectroscopy was performed using a three-electrode method in an electrolytic cell (electrolyte: physiological saline) with a test frequency range of 0.01Hz-10 Hz. 5 Hz; after testing according to Figure 7 The equivalent circuit shown was fitted with electrochemical impedance using ZVIEW software to obtain the pore resistance R. po Charge transfer resistance R ct The analysis of the above-mentioned detection parameters in the examples and comparative examples shows that the corrosion resistance and impedance of the electrode prepared in the examples are lower than those of the electrode prepared in the comparative examples, indicating that the electrode provided in this application has excellent corrosion resistance and low interfacial impedance, which is beneficial to its use.

[0087] The above provides a detailed description of the embodiments provided in this application. This document elucidates and explains the principles and implementation methods of this application. The above description is only intended to help understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An electrode, characterized in that, The electrode includes a first electrode material layer and a second electrode material layer disposed on the surface of the first electrode material layer. The first electrode material layer is made of titanium carbide with a doped metal, and the second electrode material layer is made of titanium carbonitride with the doped metal. The doped metal includes at least one of aluminum and copper.

2. The electrode as described in claim 1, characterized in that, The doped metals in the first electrode material layer and the second electrode material layer are the same.

3. The electrode as described in claim 1, characterized in that, The content of the doped metal in the second electrode material layer is greater than the content of the doped metal in the first electrode material layer; The content of the doped metal in the second electrode material layer is 2.7 at.% to 4.4 at.%.

4. The electrode as described in claim 1, characterized in that, The surface roughness of the second electrode material layer away from the first electrode material layer is 55nm-75nm.

5. The electrode as claimed in claim 1, characterized in that, The thickness ratio of the second electrode material layer to the first electrode material layer is 3-5.

6. The electrode as claimed in claim 1, characterized in that, The thickness of the first electrode material layer is 0.15μm-0.25μm; The thickness of the second electrode material layer is 0.45 μm-0.75 μm; The thickness of the electrode is 0.6μm-1μm.

7. The electrode as claimed in claim 1, characterized in that, The pore resistance R of the electrode po 22.8Ω•cm 2 -48.2Ω•cm 2 Charge transfer resistance R ct It is 6.3×10 5 Ω•cm 2 -9.8×10 5 Ω•cm 2 The polarization potential ranges from -246.8 mV to -174.2 mV, and the corrosion current density is 1.84 × 10⁻⁶ mV. -8 A / cm 2 -7.2×10 -8 A / cm 2 The impedance at 10Hz is 811Ω-2030Ω.

8. A method for preparing an electrode as described in any one of claims 1-7, characterized in that, include: An electrode is formed by deposition of a first electrode material layer and a second electrode material layer, wherein the second electrode material layer is disposed on the surface of the first electrode material layer. The first electrode material layer is made of titanium carbide with a doped metal, and the second electrode material layer is made of titanium carbonitride with the doped metal, wherein the doped metal includes at least one of aluminum and copper.

9. The preparation method according to claim 8, characterized in that, include: The method of forming the first electrode material layer by deposition includes: using magnetron sputtering with a titanium target, a graphite target, and a doped metal target as targets, and an inert gas as the working gas to deposit and form the first electrode material layer; the target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-0.6A, the target power of the doped metal target is 40W-70W, the flow rate of the inert gas is 20sccm-30sccm, and the deposition time is 15min-30min; The method of forming the second electrode material layer by deposition includes: using magnetron sputtering with a titanium target, a graphite target, and a doped metal target as targets, and a mixture of inert gas and nitrogen as the working gas to deposit and form the second electrode material layer; the target current of the titanium target is 3A-6A, the target current of the graphite target is 0.1A-5A, the target power of the doped metal target is 40W-1600W, the flow rate of the inert gas is 20sccm-30sccm, the flow rate of the nitrogen gas is 8sccm-20sccm, and the deposition time is 60min-90min.

10. An electronic device, characterized in that, The device includes an electronic device body, the electronic device body includes electrodes, the electrodes include a first electrode material layer and a second electrode material layer disposed on the surface of the first electrode material layer, the first electrode material layer is made of titanium carbide with a doped metal, the second electrode material layer is made of titanium carbonitride with the doped metal, and the doped metal includes at least one of aluminum and copper.

Images