Gas flow field uniformity detection system and method

Abstract

The present application relates to the technical field of chemical vapor deposition, and specifically provides a gas flow field uniformity detection system and method, which include: a drive component; a detection disk, which includes a carrier platform, an air pressure sensor and at least one gas concentration sensor, the air pressure sensor and the gas concentration sensor are both arranged on the carrier platform, the air pressure sensor is used to collect and generate air pressure information, and the gas concentration sensor is used to collect and generate concentration information of the corresponding raw material gas; a controller, which is electrically connected to the air pressure sensor, the gas concentration sensor and the drive component, and is used to control the drive component to intermittently drive the carrier platform to rotate a preset first angle, and is also used to detect whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor at different positions, and is also used to detect whether the corresponding raw material gas is uniform based on the concentration information collected and generated by the gas concentration sensor at different positions; the system can effectively improve the uniformity of the film thickness of epitaxial growth.

Description

Technical Field

[0001] The present application relates to the field of chemical vapor deposition technology, and in particular to a gas flow field uniformity detection system and method. Background Art

[0002] In chemical vapor deposition (CVD), film thickness uniformity is a key indicator for measuring the quality of epitaxial products. Since gas flow field uniformity is a crucial factor in determining film thickness uniformity, accurately measuring the gas flow field distribution is crucial for controlling film thickness uniformity. Existing gas flow field uniformity detection devices can only detect the concentration uniformity of the mixed gas. Since they cannot detect the concentration uniformity of individual feedstock gases, it is possible for the concentration of the mixed gas to be the same at different points in space, but the concentrations of the individual feedstock gases to differ. In this case, the CVD rates at these points vary, leading to uneven thickness of the epitaxially grown film.

[0003] There is currently no effective technical solution to the above problems. Summary of the Invention

[0004] The purpose of this application is to provide a gas flow field uniformity detection system and method, which can effectively improve the thickness uniformity of epitaxial growth films.

[0005] In a first aspect, the present application provides a gas flow field uniformity detection system for detecting the uniformity of a gas flow field of an epitaxial device, comprising:

[0006] Drive components;

[0007] A detection plate comprising a carrier, an air pressure sensor, and at least one gas concentration sensor, wherein the air pressure sensor and the gas concentration sensor are both disposed on the carrier, the air pressure sensor being used to collect and generate air pressure information, and the gas concentration sensor being used to collect and generate concentration information of the corresponding raw gas;

[0008] The controller is electrically connected to the above-mentioned air pressure sensor, the above-mentioned gas concentration sensor and the above-mentioned driving component, and is used to control the above-mentioned driving component to intermittently drive the above-mentioned supporting platform to rotate a preset first angle. It is also used to detect whether the mixed gas is uniform based on the above-mentioned air pressure information collected and generated by the above-mentioned air pressure sensor at different positions, and is also used to detect whether the corresponding above-mentioned raw material gas is uniform based on the above-mentioned concentration information collected and generated by the above-mentioned gas concentration sensor at different positions.

[0009] The present application provides a gas flow field uniformity detection system that can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0010] Optionally, the process of detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor at different positions includes:

[0011] Acquire first molecular number density information at different locations based on the preset first temperature information and the air pressure information collected and generated by the air pressure sensor at different locations;

[0012] Whether the mixed gas is uniform is detected according to the first molecular number density information.

[0013] Optionally, the gas flow field uniformity detection system further includes a temperature sensor, which is disposed on the supporting platform and configured to collect and generate second temperature information. The process of detecting whether the mixed gas is uniform based on the pressure information collected and generated at different positions by the pressure sensor includes:

[0014] acquiring first molecular number density information at different locations based on the air pressure information collected and generated by the air pressure sensor at different locations and the second temperature information collected and generated by the temperature sensor at different locations;

[0015] Whether the mixed gas is uniform is detected according to the first molecular number density information.

[0016] The present application provides a gas flow field uniformity detection system, which first obtains first molecular number density information at different positions based on the air pressure information and second temperature information collected and generated at different positions, and then detects whether the mixed gas is uniform based on the first molecular number density information. Since the second temperature information can accurately reflect the temperature at different positions, the first molecular number density information obtained based on the air pressure information and the second temperature information is more accurate, thereby effectively improving the accuracy of detecting whether the mixed gas is uniform.

[0017] Optionally, there are multiple types of gas concentration sensors, and the process of detecting whether the corresponding raw gas is uniform based on the concentration information collected and generated by the gas concentration sensors at different positions includes:

[0018] Acquire first concentration ratio information of the plurality of raw gasses according to concentration information collected and generated by the plurality of gas concentration sensors at different positions;

[0019] Whether the raw material gas is uniform is detected based on the first concentration ratio information.

[0020] Optionally, the above-mentioned epitaxial equipment includes multiple raw gas supply components, and the multiple raw gas supply components are respectively used to provide the corresponding raw gases. The above-mentioned controller is also used to adjust the concentration of the above-mentioned raw gas provided by the above-mentioned raw gas supply components according to the above-mentioned first concentration ratio information, the preset second concentration ratio information and the preset first critical value, so that the absolute value of the difference between the above-mentioned first concentration ratio information and the above-mentioned second concentration ratio information is less than or equal to the above-mentioned first critical value.

[0021] The present application provides a gas flow field uniformity detection system that can adjust the concentration of the raw gas provided by the raw gas supply component according to the first concentration ratio information, the preset second concentration ratio information and the preset first critical value, so that the first concentration information is stabilized near the second concentration ratio information, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0022] Optionally, the supporting platform is disc-shaped, and the air pressure sensor and the gas concentration sensor are arranged on the top or bottom of the supporting platform.

[0023] The supporting platform of a gas flow field uniformity detection system provided in the present application is disc-shaped. Since the shape of the supporting platform is the same as that of the substrate, during the process of detecting the uniformity of the gas flow field, the supporting platform has little interference with the gas flow field, thereby further improving the accuracy of detecting whether the gas flow field is uniform.

[0024] Optionally, the number of each of the above-mentioned gas concentration sensors is 2-6, and each of the above-mentioned gas concentration sensors is arranged on the above-mentioned supporting platform at radial equidistant intervals.

[0025] In a second aspect, the present application further provides a gas flow field uniformity detection method for detecting the uniformity of the gas flow field of an epitaxial device, which is applied to a gas flow field uniformity detection system. The gas flow field uniformity detection system includes a drive assembly and a detection disk. The detection disk includes a carrier, an air pressure sensor, and at least one gas concentration sensor. The air pressure sensor and the gas concentration sensor are both arranged on the carrier. The air pressure sensor is used to collect and generate air pressure information. The gas concentration sensor is used to collect and generate concentration information of the corresponding raw material gas. The gas flow field uniformity detection method includes the following steps:

[0026] Controlling the driving assembly to intermittently drive the supporting platform to rotate by a preset first angle;

[0027] Whether the mixed gas is uniform is detected based on the above-mentioned air pressure information collected and generated at different positions by the above-mentioned air pressure sensor, and whether the corresponding above-mentioned raw gas is uniform is detected based on the above-mentioned concentration information collected and generated at different positions by the above-mentioned gas concentration sensor.

[0028] The present application provides a method for detecting gas flow field uniformity, which can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0029] In a third aspect, the present application further provides a gas flow field uniformity detection method for detecting the uniformity of the gas flow field of an epitaxial device, which is applied to a gas flow field uniformity detection system. The gas flow field uniformity detection system includes a drive assembly and a detection disk. The detection disk includes a carrier, an air pressure sensor, and at least one gas concentration sensor. The air pressure sensor and the gas concentration sensor are both arranged on the carrier. The air pressure sensor is used to collect and generate air pressure information. The gas concentration sensor is used to collect and generate concentration information of the corresponding raw material gas. The gas flow field uniformity detection method includes the following steps:

[0030] Controlling the driving assembly to intermittently drive the supporting platform to rotate by a preset first angle;

[0031] detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor at different positions;

[0032] After the mixed gas is uniform, the concentration information collected and generated by the gas concentration sensor at different positions is used to detect whether the corresponding raw gas is uniform.

[0033] The present application provides a method for detecting uniformity of gas flow field, which can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw gas is different, thereby effectively improving the uniformity of the film thickness of epitaxial growth. Moreover, since the uniformity of the corresponding raw gas can only be detected based on the concentration information after the mixed gas is uniform, the concentration information collected and generated at different positions at this time can more accurately reflect whether the raw gas at different positions is uniform. Therefore, the present application provides a method for detecting uniformity of gas flow field, which can further improve the accuracy of detecting whether the raw gas is uniform.

[0034] Optionally, the gas concentration sensor may be of multiple types, and after the mixed gas is uniform, the step of detecting whether the corresponding raw gas is uniform based on the concentration information collected and generated by the gas concentration sensor at different positions includes the following steps:

[0035] After the mixed gas is uniform, first concentration ratio information of the plurality of raw gas is obtained according to concentration information collected and generated by the plurality of gas concentration sensors at different positions;

[0036] Whether the raw material gas is uniform is detected based on the first concentration ratio information.

[0037] From the above, it can be seen that the gas flow field uniformity detection system and method provided in the present application can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0038] Other features and advantages of the present application will be described in the following description and, in part, will become apparent from the description or be understood by practicing the embodiments of the present application. The objectives and other advantages of the present application can be achieved and obtained through the structures particularly pointed out in the written description, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram of the control structure of a gas flow field uniformity detection system provided in an embodiment of the present application.

[0040] Figure 2 This is a schematic structural diagram of a detection disk provided in Examples 1 and 2 of the present application.

[0041] Figure 3 A schematic structural diagram of a detection disk provided in another embodiment of the present application.

[0042] Figure 4 A flow chart of a method for detecting gas flow field uniformity provided in an embodiment of the present application.

[0043] Figure 5 A flow chart of a method for detecting gas flow field uniformity provided in another embodiment of the present application.

[0044] Figure 6 This is a flow chart of a gas flow field uniformity detection method provided in Example 1 of the present application.

[0045] Figure 7 This is a flow chart of a gas flow field uniformity detection method provided in Example 2 of the present application.

[0046] Figure markings: 1. Drive component; 2. Detection disk; 21. Carrying platform; 22. Air pressure sensor; 23. Gas concentration sensor; 231. Silane concentration sensor; 232. Propane concentration sensor; 233. Nitrogen concentration sensor; 24. Temperature sensor; 25. Flow rate sensor; 3. Controller; 4. Raw gas supply component. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0048] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0049] In chemical vapor deposition (CVD), film thickness uniformity is an important indicator for detecting the quality of epitaxial products. Since gas flow field uniformity is an important factor in determining film thickness uniformity, accurately measuring the gas flow field distribution is of great significance for controlling film thickness uniformity. Existing gas flow field uniformity detection devices are used to detect whether the gas flow field in the epitaxial device is uniform before epitaxial growth begins. The devices include multiple pressure sensors and a controller. The multiple pressure sensors are used to collect and generate pressure information at different locations. For example, if the pressure dispersion at different locations is small, the gas mixture is considered uniform; if the pressure dispersion at different locations is large, the gas mixture is considered non-uniform. CVD generally requires the use of multiple raw material gases and their thorough mixing. Existing gas flow field uniformity detection devices can only detect the concentration uniformity of the mixed gas by collecting pressure information, but cannot detect the concentration uniformity of each raw material gas. Therefore, the concentration of the mixed gas at different spatial points may be the same, but the concentration of each raw material gas may be different. In this case, the chemical vapor deposition rate at different spatial points is different, resulting in non-uniform film thickness during epitaxial growth. As the number of air pressure sensors increases, the gas flow field uniformity detection device can obtain mixed gas concentration information at more locations. In order to improve the accuracy of detecting whether the gas flow field is uniform, the existing gas flow field uniformity detection device includes a large number of air pressure sensors. However, a large number of air pressure sensors will not only increase the production cost of the gas flow field uniformity detection device, but also change the gas flow field of the epitaxial equipment, thereby resulting in a large deviation between the detection results of the gas flow field uniformity detection device and the actual situation.

[0050] First, as Figure 1-Figure 3 As shown, the present application provides a gas flow field uniformity detection system for detecting the uniformity of the gas flow field of an epitaxial device, which includes:

[0051] Drive component 1;

[0052] The test plate 2 includes a carrier 21, an air pressure sensor 22, and at least one gas concentration sensor 23. The air pressure sensor 22 and the gas concentration sensor 23 are both arranged on the carrier 21. The air pressure sensor 22 is used to collect and generate air pressure information, and the gas concentration sensor 23 is used to collect and generate corresponding raw gas concentration information;

[0053] The controller 3 is electrically connected to the air pressure sensor 22, the gas concentration sensor 23 and the drive component 1, and is used to control the drive component 1 to intermittently drive the carrier 21 to rotate a preset first angle. It is also used to detect whether the mixed gas is uniform based on the air pressure information collected and generated at different positions by the air pressure sensor 22, and is also used to detect whether the corresponding raw material gas is uniform based on the concentration information collected and generated at different positions by the gas concentration sensor 23.

[0054] The gas flow field uniformity detection system of this embodiment is used to detect whether the gas flow field of the epitaxial device is uniform before the epitaxial device performs epitaxial growth by detecting whether the mixed gas and raw material gas of the epitaxial device are uniform. The detection disk 2 includes a carrier 21, an air pressure sensor 22, and at least one gas concentration sensor 23. The air pressure sensor 22 and the gas concentration sensor 23 are both arranged on the carrier 21. The air pressure sensor 22 is used to collect and generate air pressure information. The type of gas concentration sensor 23 preferably includes gas concentration sensors 23 corresponding to all raw material gases involved in the chemical vapor deposition reaction. The gas concentration sensor 23 is used to collect and generate concentration information of the corresponding raw material gas. The drive component 1 is a driving rotation mechanism, such as a motor, a manipulator, a gear set, a synchronous belt, etc. To simplify the structure of the gas flow field uniformity detection system, the drive component 1 is preferably a manipulator of the epitaxial device. Since the drive component 1 can drive the carrier 21 to rotate, the air pressure sensor 22 and the gas concentration sensor 23 are arranged at positions outside the rotation center. Therefore, the carrier 21 can drive the air pressure sensor 22 and the gas concentration sensor 23 to rotate. The controller 3 is electrically connected to the air pressure sensor 22, the gas concentration sensor 23 and the drive component 1. The controller 3 can obtain air pressure information and concentration information. The controller 3 can also control the drive component 1 to intermittently drive the carrier 21 to rotate a preset first angle. The first angle can be any value. For example, the controller 3 controls the drive component 1 to drive the carrier 21 to rotate 30° every 15 seconds. For example, the controller 3 controls the drive component 1 to drive the carrier 21 to rotate 20° every 10 seconds. It should be understood that those skilled in the art can select the type of gas concentration sensor 23 based on actual needs. For example, if the epitaxially grown thin film is a silicon carbide thin film, and the raw materials required for epitaxial growth are silane (SiH4) and propane (C3H8), the gas concentration sensor 23 may be a silane concentration sensor 231 and a propane concentration sensor 232. Another example is that if the epitaxially grown thin film is a single-crystalline silicon thin film, and the raw materials required for epitaxial growth are silane, the gas concentration sensor 23 may be a silane gas concentration sensor 231. Another example is that if the epitaxially grown thin film is an n-type doped silicon carbide thin film, and the raw materials required for epitaxial growth are silane, propane, and nitrogen, the gas concentration sensors 23 may be a silane concentration sensor 231, a propane concentration sensor 232, and a nitrogen concentration sensor 233. It should also be understood that the more locations at which the pressure sensor 22 collects and generates pressure information, the more accurately the controller 3 can detect whether the mixed gas is uniform based on the pressure information. Similarly, the more locations at which the gas concentration sensor 23 collects and generates concentration information, the more accurately the controller 3 can detect whether the corresponding raw materials are uniform based on the concentration information.

[0055] The controller 3 of this embodiment controls the driving component 1 to intermittently drive the carrier 21 to rotate a preset first angle. The carrier 21 can drive the air pressure sensor 22 and the gas concentration sensor 23 to intermittently rotate the first angle. Therefore, the air pressure sensor 22 can collect and generate air pressure information at different positions, and the gas concentration sensor 23 can collect and generate concentration information of the raw material gas at different positions. That is, the mixed gas uniformity detection system of the embodiment of the present application only needs to set a small number of air pressure sensors 22 and gas concentration sensors 23 on the carrier 21 to obtain air pressure information and concentration information at different positions, thereby effectively reducing production costs and reducing detection result errors caused by detection deviations of different sensors, and avoiding the situation where the gas flow field of the epitaxial equipment changes due to an excessive number of sensors. The controller 3 can detect whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor 22 at different positions. For example, if the degree of dispersion of the air pressure at different positions is small, the mixed gas is considered uniform; if the degree of dispersion of the air pressure at different positions is large, the mixed gas is considered non-uniform. The controller 3 can detect whether the corresponding raw material gas is uniform based on the concentration information collected and generated by the gas concentration sensor 23 at different positions. For example, if the degree of dispersion of the concentration at different positions of the same raw material gas is small, the raw material gas is considered uniform; if the degree of dispersion of the concentration at different positions of the same raw material gas is large, the raw material gas is considered non-uniform. Since the gas flow field uniformity detection system provided by the present application can detect whether the mixed gas is uniform based on the air pressure information and detect whether the corresponding raw material gas is uniform based on the concentration information, it can detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the film thickness of the epitaxial growth.

[0056] In some embodiments, the controller 3 uses the gas pressure information and concentration information at different locations to calibrate a preset gas flow field uniformity detection model. The controller 3 simulates the epitaxial growth process using simulation software such as COMSOL or Ansys, and uses the calibrated gas flow field uniformity detection model to analyze whether the gas flow field is uniform. The uniformity of the gas flow field includes the uniformity of the mixed gas and the uniformity of each raw material gas. If the mixed gas and / or the raw material gas are uneven, the controller 3 adjusts the operating parameters of the epitaxial growth, such as the gas flow rate, carrier gas concentration, and gas pressure, until the mixed gas and the raw material gas are uniform. This ensures that the gas flow field of the epitaxial equipment is uniform during epitaxial growth, thereby improving the uniformity of the film thickness of the epitaxial growth.

[0057] In some embodiments, the process of detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor 22 at different positions includes:

[0058] Acquire first molecular number density information at different locations based on preset first temperature information and air pressure information collected and generated by the air pressure sensor 22 at different locations;

[0059] Whether the mixed gas is uniform is detected according to the first molecular number density information.

[0060] Among them, since the epitaxial device is in a sealed state during epitaxial growth, the gas pressure information and concentration information collected and generated by the gas flow field uniformity detection system at any temperature can reflect whether the mixed gas and the raw material gas are uniform when the epitaxial device is performing epitaxial growth. Therefore, the preset first temperature information can be any value. In order to save energy required for heating, the first temperature information is preferably room temperature. The calculation formula for obtaining the first molecular number density information at different locations based on the preset first temperature information and the gas pressure information collected and generated by the gas pressure sensor 22 at different locations is shown in Formula (1):

[0061] (1)

[0062] in, is the first molecular number density information, p is the air pressure information, and k is the Boltzmann constant ( ), T is the preset first temperature information, and the unit of the first temperature information is K.

[0063] The process of detecting whether the mixed gas is uniform according to the first molecular number density information may be any of the following:

[0064] 1. If all differences between the first molecular number density information at different locations are less than or equal to a first preset difference, the gas mixture is considered uniform; if any difference between the first molecular number density information at different locations is greater than the first preset difference, the gas mixture is considered non-uniform;

[0065] 2. Calculating an average first molecular number density based on the first molecular number density information at different locations, and calculating a standard deviation of the first molecular number density based on the first molecular number density information and the average first molecular number density. If the standard deviation of the first molecular number density is less than or equal to a first preset standard deviation, the mixed gas is considered uniform; if the standard deviation of the first molecular number density is greater than the first preset standard deviation, the mixed gas is considered non-uniform.

[0066] 3. Calculate the first non-uniformity based on the first molecular number density average value and the first molecular number density standard deviation. The calculation formula is shown in formula (2). If the first non-uniformity is less than or equal to the first preset non-uniformity, the mixed gas is considered uniform; if the first non-uniformity is greater than the first preset non-uniformity, the mixed gas is considered non-uniform.

[0067] (2)

[0068] Wherein, a is the first unevenness, b is the standard deviation of the first molecular number density, and c is the average value of the first molecular number density.

[0069] In some embodiments, the controller 3 adjusts the operating parameters of the epitaxial device based on the first molecular number density information, the preset second molecular number density information, and the preset second critical value, so that the absolute value of the difference between the first molecular number density information and the second molecular number density information is less than or equal to the second critical value. The second molecular number density information of this embodiment is the molecular number density obtained by the applicant through a large number of experiments to achieve the best uniformity of epitaxial film thickness. The controller 3 of this embodiment can adjust the operating parameters of the epitaxial device based on the first molecular number density information, the second molecular number density information, and the second critical value, so that the first molecular number density information is stabilized near the second molecular number density information, thereby further improving the uniformity of epitaxial film thickness.

[0070] Since the temperature inside the epitaxial device may change, and the first temperature information is a preset value, the first molecular number density information obtained based on the first temperature information and the air pressure information may deviate from the actual molecular number density information of the epitaxial device. To solve the above problem, in some embodiments, the mixed gas uniformity detection system further includes a temperature sensor 24, which is disposed on the carrier 21 and is used to collect and generate the second temperature information. The process of detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor 22 at different positions includes:

[0071] Acquire first molecular number density information at different positions based on air pressure information collected and generated by the air pressure sensor 22 at different positions and second temperature information collected and generated by the temperature sensor 24 at different positions;

[0072] Whether the mixed gas is uniform is detected according to the first molecular number density information.

[0073] The present application provides a mixed gas uniformity detection system, which first obtains first molecular number density information at different locations based on air pressure information and second temperature information collected and generated at different locations, and then detects whether the mixed gas is uniform based on the first molecular number density information. Since the second temperature information can accurately reflect the temperature at different locations, the first molecular number density information obtained based on the air pressure information and the second temperature information is more accurate, thereby effectively improving the accuracy of detecting whether the mixed gas is uniform.

[0074] In some embodiments, there are various types of gas concentration sensors 23. The process of detecting whether the corresponding raw material gas is uniform based on the concentration information collected and generated by the gas concentration sensors 23 at different locations includes:

[0075] Acquire first concentration ratio information of the multiple raw gas according to concentration information collected and generated by the multiple gas concentration sensors 23 at different positions;

[0076] Whether the raw material gas is uniform is detected according to the first concentration ratio information.

[0077] Each gas concentration sensor 23 can collect and generate corresponding raw gas concentration information at different locations. The controller 3 can calculate first concentration ratio information of multiple raw gas at the same location based on the concentration information collected and generated by multiple gas concentration sensors 23. The process of detecting whether the raw gas is uniform based on the first concentration ratio information can be any of the following:

[0078] 1. If all differences between the first concentration ratio information at different locations are less than or equal to a second preset difference, the raw gas is considered uniform; if any difference between the first concentration ratio information at different locations is greater than the second preset difference, the raw gas is considered non-uniform;

[0079] 2. Calculating a first concentration ratio average value based on the first concentration ratio information at different locations, and calculating a first concentration ratio standard deviation based on the first concentration ratio information and the first concentration ratio average value. If the first concentration ratio standard deviation is less than or equal to a second preset standard deviation, the raw gas is considered uniform; if the first concentration ratio standard deviation is greater than the second preset standard deviation, the raw gas is considered non-uniform.

[0080] 3. Calculate the second non-uniformity based on the first concentration ratio average value and the first concentration ratio standard deviation. The calculation formula is similar to formula (2). If the second non-uniformity is less than or equal to the second non-preset uniformity, the raw gas is considered uniform; if the second non-uniformity is greater than the second preset non-uniformity, the raw gas is considered non-uniform.

[0081] 4. If the absolute value of the difference between the first concentration ratio average value and the preset second concentration ratio information is less than or equal to the preset first critical value, the raw gas is considered uniform; if the absolute value of the difference between the first concentration ratio average value and the preset second concentration ratio information is greater than or equal to the preset first critical value, the raw gas is considered non-uniform.

[0082] In some embodiments, the epitaxial growth apparatus includes multiple raw material gas supply assemblies 4, each of which is configured to provide corresponding raw material gases. The controller 3 is further configured to adjust the concentration of the raw material gases provided by the raw material gas supply assemblies 4 based on first concentration ratio information, preset second concentration ratio information, and a preset first critical value, such that the absolute value of the difference between the first concentration ratio information and the second concentration ratio information is less than or equal to the first critical value. The second concentration ratio information is the concentration ratio of the multiple raw material gases that achieves optimal film thickness uniformity during epitaxial growth, and the first critical value is an allowable error. Taking silicon carbide film as an example, the raw materials required for epitaxial growth are silane and propane, the gas concentration sensor 23 is a propane sensor and a silane sensor, and the epitaxial equipment includes a silane supply component and a propane supply component, which are used to provide silane and propane respectively. The first concentration ratio information is the ratio of the silane concentration to the propane concentration, the second concentration ratio information is 3:1, and the first critical value is 0.06. If the first concentration ratio information is within 2.94:1-3.06:1, the concentration of silane in the silane supply component and the concentration of propane provided by the propane supply component are not changed; if the first concentration ratio information is greater than 3.06:1, the controller 3 reduces the concentration of silane provided by the silane supply component and / or increases the concentration of propane provided by the propane supply component to reduce the first concentration ratio information; if the first concentration ratio information is less than 2.94:1, the controller 3 increases the concentration of silane provided by the silane supply component and / or reduces the concentration of propane provided by the propane supply component to increase the first concentration ratio information. The present application provides a mixed gas uniformity detection system that can adjust the concentration of the raw gas provided by the raw gas supply component 4 according to the first concentration ratio information, the preset second concentration ratio information and the preset first critical difference, so that the first concentration ratio information is stabilized near the second concentration ratio information, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0083] In some embodiments, the inspection tray 2 further includes a gas flow rate sensor 25, which is disposed on the carrier 21 and is used to collect and generate gas flow rate information. The controller 3 is further used to detect whether the gas flow rate is uniform based on the gas flow rate information collected and generated at different positions. Since the gas flow rate is related to the gas pressure, the uniformity of the gas flow rate also affects the uniformity of the gas pressure, thereby affecting the uniformity of the gas flow field and the uniformity of the epitaxially grown film thickness. Therefore, this embodiment can further improve the uniformity of the epitaxially grown film thickness by detecting whether the gas flow rate is uniform.

[0084] In some embodiments, test tray 2 is placed on a tray within the epitaxial growth apparatus, which is used to hold wafers during epitaxial growth. When test tray 2 is placed on the tray, the air pressure information collected by air pressure sensor 22 and the concentration information collected by gas concentration sensor 23 accurately reflect the air pressure and feedstock gas concentration at the wafer during epitaxial growth, thereby effectively improving the accuracy of detecting whether the gas flow field is uniform.

[0085] In some embodiments, the carrier 21 is disc-shaped, and the air pressure sensor 22 and the gas concentration sensor 23 are disposed on the top or bottom of the carrier 21. Since the shape of the carrier 21 is the same as that of the substrate, the carrier 21 has little interference with the gas flow field during the detection of gas flow field uniformity, thereby further improving the accuracy of the detection of whether the gas flow field is uniform.

[0086] In some embodiments, after the rotation angle of the support platform 21 is greater than a preset second angle, the controller 3 detects whether the mixed gas is uniform based on the pressure information collected and generated by the pressure sensor 22 at different positions, and detects whether the corresponding raw gas is uniform based on the concentration information collected and generated by the gas concentration sensor 23 at different positions. The second angle is a positive integer multiple of the first angle.

[0087] In some embodiments, the number of each type of gas concentration sensor 23 is 2-6, and each type of gas concentration sensor 23 is radially equidistantly arranged on the carrier 21. This embodiment effectively increases the number of gas concentration sensor 23 acquisition points, thereby effectively improving the accuracy of the controller 3 in detecting whether the corresponding raw material gas is uniform based on concentration information. Preferably, the number of each type of pressure sensor 22, temperature sensor 24, and flow rate sensor 25 is 2-6, and each type of pressure sensor 22, temperature sensor 24, and flow rate sensor 25 is radially equidistantly arranged on the carrier 21.

[0088] From the above, it can be seen that the gas flow field uniformity detection system provided by the present application can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0089] Second, as Figure 4As shown, the present application also provides a gas flow field uniformity detection method for detecting the uniformity of the gas flow field of the epitaxial device, which is applied in the gas flow field uniformity detection system. The gas flow field uniformity detection system includes a drive component 1 and a detection disk 2. The detection disk 2 includes a carrier 21, an air pressure sensor 22 and at least one gas concentration sensor 23. The air pressure sensor 22 and the gas concentration sensor 23 are both arranged on the carrier 21. The air pressure sensor 22 is used to collect and generate air pressure information. The gas concentration sensor 23 is used to collect and generate concentration information of the corresponding raw material gas. The gas flow field uniformity detection method includes the following steps:

[0090] S11, controlling the driving assembly 1 to intermittently drive the carrying platform 21 to rotate a preset first angle;

[0091] S12. Detect whether the mixed gas is uniform based on the pressure information collected and generated by the pressure sensor 22 at different positions, and detect whether the corresponding raw gas is uniform based on the concentration information collected and generated by the gas concentration sensor 23 at different positions.

[0092] The operating principle of the gas flow field uniformity detection method provided in this embodiment of the present application is the same as the operating principle of the gas flow field uniformity detection system provided in the first aspect above, and will not be discussed in detail here. In this embodiment of the present application, the time point at which the air pressure sensor 22 collects and generates air pressure information is the same as the time point at which the gas concentration sensor 23 collects and generates concentration information.

[0093] From the above, it can be seen that the gas flow field uniformity detection method provided by the present application can simultaneously detect whether the mixed gas is uniform based on the gas pressure information and detect whether the corresponding raw material gas is uniform based on the concentration information. That is, the gas flow field uniformity detection method provided by the present application can simultaneously judge the uniformity of the mixed gas and the raw material gas to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0094] Thirdly, as Figure 5 As shown, the present application also provides a gas flow field uniformity detection method for detecting the uniformity of the gas flow field of the epitaxial device, which is applied in the gas flow field uniformity detection system. The gas flow field uniformity detection system includes a drive component 1 and a detection disk 2. The detection disk 2 includes a carrier 21, an air pressure sensor 22 and at least one gas concentration sensor 23. The air pressure sensor 22 and the gas concentration sensor 23 are both arranged on the carrier 21. The air pressure sensor 22 is used to collect and generate air pressure information. The gas concentration sensor 23 is used to collect and generate concentration information of the corresponding raw material gas. The gas flow field uniformity detection method includes the following steps:

[0095] S21, controlling the driving assembly 1 to intermittently drive the carrying platform 21 to rotate a preset first angle;

[0096] S22, detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor 22 at different positions;

[0097] S23. After the mixed gas is uniform, the gas concentration sensor 23 detects whether the corresponding raw material gas is uniform based on the concentration information collected and generated at different positions.

[0098] The operating principle of the gas flow field uniformity detection method provided in the embodiment of the present application is the same as the operating principle of the gas flow field uniformity detection system provided in the first aspect above, and will not be discussed in detail here. Only after the mixed gas is uniform, the embodiment of the present application detects whether the corresponding raw gas is uniform based on the concentration information collected and generated at different locations by the gas concentration sensor 23.

[0099] The present application provides a method for detecting gas flow field uniformity, which can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the film thickness of the epitaxial growth. Moreover, since there may be a certain detection error when detecting whether the raw material gas is uniform based on the concentration information collected and generated by the gas concentration sensor 23 when the mixed gas is uneven, the concentration information collected and generated by the gas concentration sensor 23 when the mixed gas is uniform is valid information. However, the embodiment of the present application will detect whether the corresponding raw material gas is uniform based on the concentration information only after the mixed gas is uniform. At this time, the concentration information collected and generated at different positions can more accurately reflect whether the raw material gas at different positions is uniform. Therefore, compared with the gas flow field uniformity detection method provided in the second aspect above, the gas flow field uniformity detection method provided in the embodiment of the present application can further improve the accuracy of detecting whether the raw material gas is uniform.

[0100] In some embodiments, there are multiple types of gas concentration sensors 23, and step S23 includes the following steps:

[0101] S231, after the mixed gas is uniform, obtaining first concentration ratio information of the multiple raw gas according to concentration information collected and generated by the multiple gas concentration sensors 23 at different positions;

[0102] S232. Detect whether the raw material gas is uniform according to the first concentration ratio information.

[0103] From the above, it can be seen that the mixed gas uniformity detection method provided by the present application can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness. Since the corresponding raw material gas is uniform only after the mixed gas is uniform, the concentration information collected and generated at different positions can more accurately reflect whether the raw material gas at different positions is uniform. Therefore, the gas flow field uniformity detection method provided by the present application can further improve the accuracy of detecting whether the gas flow field is uniform.

[0104] Example 1

[0105] Taking silicon carbide film as an example, Figure 2 and Figure 6 As shown, a mixed gas uniformity detection system provided in an embodiment of the present application includes a drive assembly 1, a detection disk 2, and a controller 3. The detection disk 2 includes a carrier 21, a temperature sensor 24, a pressure sensor 22, and a gas concentration sensor 23. The temperature sensor 24 is used to collect and generate second temperature information, and the pressure sensor 22 is used to collect and generate pressure information. The drive assembly 1 is a manipulator of an epitaxial growth device. The raw materials for epitaxial growth are silane and propane. The gas concentration sensors 23 are silane concentration sensors 231 and propane concentration sensors 232. The silane concentration sensor 231 is used to collect first silane concentration information, and the propane concentration sensor 232 is used to collect second propane concentration information. The number of silane concentration sensors 231, propane concentration sensor 232, temperature sensor 24, and pressure sensor 22 is five. The carrier 21 is disc-shaped, and the silane concentration sensors 231, propane concentration sensor 232, temperature sensor 24, and pressure sensor 22 are radially equidistantly arranged on the carrier 21. The epitaxial growth device includes a silane supply assembly and a propane supply assembly. The silane supply assembly is used to provide silane, and the propane supply assembly is used to provide propane. The controller 3 is electrically connected to the drive assembly 1, the temperature sensor 24, the air pressure sensor 22, the gas concentration sensor 23, the silane supply assembly, and the propane supply assembly. The first angle is 45°, the second angle is 360°, the first preset unevenness is 3%, the second concentration ratio information is the ratio of the silane concentration to the propane gas, specifically 3:1, and the first critical difference is 0.06.

[0106] Based on the gas flow field uniformity detection system provided in this embodiment, this embodiment also provides a gas flow field uniformity detection method, which includes the steps of:

[0107] S411, controlling the manipulator to drive the carrier 21 to rotate 45°;

[0108] S412, controlling the temperature sensor 24 to collect and generate second temperature information and controlling the air pressure sensor 22 to collect and generate air pressure information;

[0109] S413, determining whether the rotation angle of the carrier 21 is greater than or equal to 360°, if yes, executing step S414, otherwise executing step S411;

[0110] S414, calculating first molecular number density information based on the second temperature information and the air pressure information;

[0111] S415, calculating a first unevenness according to the first molecular number density information;

[0112] S416: Determine whether the first unevenness is less than or equal to 3%. If yes, execute step S417; otherwise, wait for 5 minutes and then execute step S411.

[0113] S417, controlling the manipulator to drive the carrier 21 to rotate 45°;

[0114] S418, controlling the silane concentration sensor 231 to collect and generate first concentration information and controlling the propane concentration sensor 232 to collect and generate second concentration information;

[0115] S419: Determine whether the rotation angle of the carrier 21 is greater than or equal to 360°. If yes, execute step S420; otherwise, execute step S417.

[0116] S420, calculating first concentration ratio information according to the first concentration information and the second concentration information;

[0117] 421. Calculate a first concentration ratio average value based on all first concentration ratio information;

[0118] 422. Determine whether the difference between the first concentration ratio average value and 3:1 is less than or equal to 0.06. If yes, execute step S423; otherwise, execute step S424.

[0119] S423, calculating a second unevenness according to the first concentration ratio information and the first concentration ratio average value;

[0120] S424, determining whether the average value of the first concentration ratio is greater than 3:1, if yes, executing step S425, otherwise executing step S426;

[0121] S425, reducing the concentration of silane provided by the silane providing component and / or increasing the concentration of propane provided by the propane providing component, and executing step S411;

[0122] S426 , increasing the concentration of silane provided by the silane supply component and / or decreasing the concentration of propane provided by the propane supply component, and executing step S411 .

[0123] The formula for calculating the first molecular number density information in step S414 is shown in formula (1), the formula for calculating the first non-uniformity in step S415 is shown in formula (2), and the formula for calculating the second non-uniformity in step S423 is similar to formula (2). In step S416, if the first non-uniformity is less than or equal to 3%, the mixed gas is considered uniform; if the first non-uniformity is greater than 3%, the mixed gas is considered non-uniform. In step S422, if the difference between the first concentration ratio average value and 3:1 is less than or equal to 0.06, the propane and silane are considered uniform; if the difference between the first concentration ratio average value and 3:1 is greater than 0.06, the propane and silane are considered non-uniform.

[0124] The present application provides a method for detecting uniformity of gas flow field, which can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same, but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the film thickness of epitaxial growth. Moreover, since the uniformity of the corresponding raw material gas can be detected based on the concentration information only after the mixed gas is uniform, the concentration information collected and generated at different positions at this time can more accurately reflect whether the raw material gas at different positions is uniform. Therefore, the gas flow field uniformity detection method provided in the embodiment of the present application can further improve the accuracy of detecting whether the raw material gas is uniform.

[0125] Example 2

[0126] Taking silicon carbide film as an example, Figure 2 and Figure 7 As shown, a gas flow field uniformity detection system provided in an embodiment of the present application is the same as a gas flow field uniformity detection system provided in Example 1.

[0127] Based on the gas flow field uniformity detection system provided in this embodiment, this embodiment also provides a gas flow field uniformity detection method, which includes the steps of:

[0128] S511, controlling the manipulator to drive the carrier 21 to rotate 45°;

[0129] S512, controlling the temperature sensor 24 to collect and generate second temperature information, controlling the air pressure sensor 22 to collect and generate air pressure information, controlling the silane concentration sensor 231 to collect and generate first concentration information, and controlling the propane concentration sensor 232 to collect and generate second concentration information;

[0130] S513, determining whether the rotation angle of the carrier 21 is greater than or equal to 360°, if yes, executing step S514, otherwise executing step S511;

[0131] S514, calculating first molecular number density information according to the second temperature information and the air pressure information;

[0132] S515, calculating a first unevenness according to the first molecular number density information;

[0133] S516: Determine whether the first unevenness is less than or equal to 3%. If yes, execute step S517; otherwise, wait for 5 minutes and then execute step S511.

[0134] S517, calculating first concentration ratio information according to the first concentration information and the second concentration information;

[0135] S518. Calculate the first concentration ratio average value based on all first concentration ratio information;

[0136] S519, determining whether the difference between the first concentration ratio average value and 3:1 is less than or equal to 0.06, if so, executing step S520, otherwise executing step S521;

[0137] S520, calculating a second unevenness according to the first concentration ratio information and the first concentration ratio average value;

[0138] S521, determine whether the average value of the first concentration ratio is greater than 3:1, if yes, execute step S522, otherwise execute step S523;

[0139] S522, reducing the concentration of silane provided by the silane providing component and / or increasing the concentration of propane provided by the propane providing component;

[0140] S523: Increase the concentration of silane provided by the silane supply component and / or decrease the concentration of propane provided by the propane supply component.

[0141] The formula for calculating the first molecular number density information in step S514 is shown in formula (1), the formula for calculating the first non-uniformity in step S515 is shown in formula (2), and the formula for calculating the second non-uniformity in step S520 is similar to formula (2). In step S516, if the first non-uniformity is less than or equal to 3%, the mixed gas is considered uniform; if the first non-uniformity is greater than 3%, the mixed gas is considered non-uniform. In step S521, if the difference between the first concentration ratio average value and 3:1 is less than or equal to 0.06, the propane and silane are considered uniform; if the difference between the first concentration ratio average value and 3:1 is greater than 0.06, the propane and silane are considered non-uniform.

[0142] Since the embodiment of the present application collects and generates the first concentration information and the second concentration information in step S512, the embodiment of the present application does not need to control the manipulator to drive the carrier 21 to rotate to obtain the first concentration information and the second concentration information after the mixed gas is uniform.

[0143] From the above, it can be seen that the gas flow field uniformity detection system and method provided in the present application can detect whether the mixed gas is uniform based on the gas pressure information and whether the corresponding raw material gas is uniform based on the concentration information, so as to detect whether the concentration of the mixed gas at different spatial points is the same but the concentration of the raw material gas is different, thereby effectively improving the uniformity of the epitaxial growth film thickness.

[0144] In the embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the above-mentioned units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another robot, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interface, the indirect coupling or communication connection of the device or unit can be electrical, mechanical or other forms.

[0145] In addition, the units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0146] Furthermore, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0147] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any actual relationship or order between these entities or operations.

[0148] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A gas flow field uniformity detection system for detecting the uniformity of the gas flow field of an epitaxial device, comprising a drive assembly (1), characterized in that: The gas flow field uniformity detection system further includes: A detection disk (2) comprising a carrier platform (21), an air pressure sensor (22) and at least one gas concentration sensor (23), wherein the air pressure sensor (22) and the gas concentration sensor (23) are both arranged on the carrier platform (21), the air pressure sensor (22) is used to collect and generate air pressure information, and the gas concentration sensor (23) is used to collect and generate corresponding raw material gas concentration information; A controller (3) is electrically connected to the air pressure sensor (22), the gas concentration sensor (23) and the drive assembly (1), and is used to control the drive assembly (1) to intermittently drive the carrier (21) to rotate a preset first angle, and is also used to detect whether the mixed gas is uniform based on the air pressure information collected and generated at different positions by the air pressure sensor (22), and is also used to detect whether the corresponding raw material gas is uniform based on the concentration information collected and generated at different positions by the gas concentration sensor (23); There are various types of gas concentration sensors (23), and the process of detecting whether the corresponding raw material gas is uniform based on the concentration information collected and generated by the gas concentration sensor (23) at different positions includes: Acquiring first concentration ratio information of the plurality of raw gasses based on concentration information collected and generated by the plurality of gas concentration sensors (23) at different positions; Whether the raw material gas is uniform is detected according to the first concentration ratio information.

2. The gas flow field uniformity detection system according to claim 1, characterized in that: The process of detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor (22) at different positions includes: Acquiring first molecular number density information at different locations based on preset first temperature information and the air pressure information collected and generated by the air pressure sensor (22) at different locations; Whether the mixed gas is uniform is detected according to the first molecular number density information.

3. The gas flow field uniformity detection system according to claim 1, characterized in that: The gas flow field uniformity detection system further comprises a temperature sensor (24), the temperature sensor (24) being arranged on the carrier platform (21), the temperature sensor (24) being used to collect and generate second temperature information, and the process of detecting whether the mixed gas is uniform based on the pressure information collected and generated at different positions by the pressure sensor (22) comprises: First molecular number density information at different positions is obtained based on the air pressure information collected and generated by the air pressure sensor (22) at different positions and the second temperature information collected and generated by the temperature sensor (24) at different positions; and whether the mixed gas is uniform is detected based on the first molecular number density information.

4. The gas flow field uniformity detection system according to claim 1, characterized in that: The epitaxial device includes a plurality of raw material gas supply components (4), each of which is used to provide corresponding raw material gases. The controller (3) is also used to adjust the concentration of the raw material gas provided by the raw material gas supply component (4) according to the first concentration ratio information, the preset second concentration ratio information and the preset first critical value, so that the absolute value of the difference between the first concentration ratio information and the second concentration ratio information is less than or equal to the first critical value.

5. The gas flow field uniformity detection system according to claim 1, characterized in that: The supporting platform (21) is disc-shaped, and the air pressure sensor (22) and the gas concentration sensor (23) are arranged on the top or bottom of the supporting platform (21).

6. The gas flow field uniformity detection system according to claim 5, characterized in that: The number of each type of gas concentration sensor (23) is 2-6, and each type of gas concentration sensor (23) is radially equidistantly arranged on the supporting platform (21).

7. A gas flow field uniformity detection method for detecting the uniformity of the gas flow field of an epitaxial device, applied in a gas flow field uniformity detection system, wherein the gas flow field uniformity detection system comprises a drive component (1), characterized in that: The gas flow field uniformity detection system further comprises a detection disk (2), the detection disk (2) comprising a carrier (21), an air pressure sensor (22) and at least one gas concentration sensor (23), the air pressure sensor (22) and the gas concentration sensor (23) both being arranged on the carrier (21), the air pressure sensor (22) being used to collect and generate air pressure information, and the gas concentration sensor (23) being used to collect and generate corresponding raw material gas concentration information, and the gas flow field uniformity detection method comprising the following steps: Controlling the driving component (1) to intermittently drive the supporting platform (21) to rotate a preset first angle; Whether the mixed gas is uniform is detected based on the pressure information collected and generated by the pressure sensor (22) at different positions, and whether the corresponding raw gas is uniform is detected based on the concentration information collected and generated by the gas concentration sensor (23) at different positions.

8. A gas flow field uniformity detection method for detecting the uniformity of the gas flow field of an epitaxial device, applied in a gas flow field uniformity detection system, wherein the gas flow field uniformity detection system comprises a drive component (1), characterized in that: The gas flow field uniformity detection system further comprises a detection disk (2), the detection disk (2) comprising a carrier (21), an air pressure sensor (22) and at least one gas concentration sensor (23), the air pressure sensor (22) and the gas concentration sensor (23) both being arranged on the carrier (21), the air pressure sensor (22) being used to collect and generate air pressure information, and the gas concentration sensor (23) being used to collect and generate corresponding raw material gas concentration information, and the gas flow field uniformity detection method comprising the following steps: Controlling the driving component (1) to intermittently drive the supporting platform (21) to rotate a preset first angle; detecting whether the mixed gas is uniform based on the air pressure information collected and generated by the air pressure sensor (22) at different positions; After the mixed gas is uniform, whether the corresponding raw material gas is uniform is detected based on the concentration information collected and generated by the gas concentration sensor (23) at different positions.

9. The gas flow field uniformity detection method according to claim 8, characterized in that: There are multiple types of gas concentration sensors (23). After the mixed gas is uniform, the step of detecting whether the corresponding raw gas is uniform based on the concentration information collected and generated by the gas concentration sensor (23) at different positions includes the following steps: After the mixed gas is uniform, first concentration ratio information of the plurality of raw gas is obtained based on concentration information collected and generated by the plurality of gas concentration sensors (23) at different positions; Whether the raw material gas is uniform is detected according to the first concentration ratio information.

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