magnetic sensor

Abstract

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

Description

TECHNICAL FIELD

[0001] The present application relates to a magnetic sensor. BACKGROUND

[0002] As the prior art described in the publication, there is a magnetic impedance element characterized in that, in a magnetic impedance element including a substrate formed of a non-magnet and a thin film magnetic core formed on the substrate, at least two or more of the aforementioned thin film magnetic cores are arranged side by side, electrodes are provided at both ends in a long side direction of the thin film magnetic core, and the aforementioned respective thin film magnetic cores are electrically connected in series with each other (see Patent Document 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2000-292506 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] Further, a magnetic sensor provided with a sensing element that senses a magnetic field by a magnetic impedance effect utilizes the fact that an impedance changes due to a magnetic field (internal magnetic field) that the sensing element receives. Therefore, in order to improve the sensitivity of the magnetic sensor, it is required to further increase the internal magnetic field when a certain external magnetic field is applied.

[0008] An object of the present application is to improve the sensitivity of a magnetic sensor that utilizes a magnetic impedance effect.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] A magnetic sensor to which the present application is applied is provided with: a substrate that is non-magnetic; a sensing element provided on the aforementioned substrate, the sensing element including a soft magnet, and the sensing element having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction that intersects the long side direction, and sensing a magnetic field by a magnetic impedance effect; and a protruding portion that protrudes from an end portion in the aforementioned long side direction of the aforementioned sensing element, the protruding portion including a soft magnet.

[0011] Further, it can be characterized in that the aforementioned protruding portion protrudes in the aforementioned long side direction.

[0012] Further, it can be characterized in that the aforementioned sensing element has a wide shape in which the width in the aforementioned short side direction is larger at the end portion in the aforementioned long side direction than at a central portion in the long side direction.

[0013] Further, it can be characterized in that the aforementioned sensing element has a taper shape in which the width narrows from the aforementioned wide shape toward the aforementioned central portion.

[0014] Further, the magnetic sensor according to the present application can be characterized in that the protruding portion has a width equal to the maximum width of the sensing element in the short direction.

[0015] The magnetic sensor according to the present application can be characterized in that it comprises a non-magnetic substrate, a plurality of sensing elements disposed on the substrate, the sensing elements including a soft magnetic body and having a long direction and a short direction, the sensing elements having uniaxial magnetic anisotropy in a direction intersecting the long direction and sensing a magnetic field by a magnetoimpedance effect, the sensing elements being arranged with gaps in the short direction, a connecting portion connecting end portions of the sensing elements in the long direction that are adjacent in the short direction, and a protruding portion protruding from an end portion of at least one of the sensing elements in the long direction, the protruding portion including a soft magnetic body.

[0016] Further, the magnetic sensor according to the present application can be characterized in that the plurality of connecting portions connect the plurality of sensing elements in series in a meandering shape.

[0017] Effects of the Invention

[0018] According to the present application, the sensitivity of a magnetic sensor utilizing a magnetoimpedance effect can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0019] [ Figure 1 ] is a diagram for explaining an example of a magnetic sensor according to the first embodiment.

[0020] [ Figure 2 ] is a diagram for explaining the relationship between a magnetic field H applied in the long direction of a sensing element and the impedance Z of the sensing element.

[0021] [ Figure 3 ] is a diagram showing the planar shape of a conventional magnetic sensor that does not have a protruding portion.

[0022] [ Figure 4 ] is a diagram showing the results of a simulation of the magnitude of an internal magnetic field in a sensing portion in a case where a predetermined external magnetic field is applied to a magnetic sensor.

[0023] [ Figure 5 ] is a diagram for explaining the effect of a protruding portion.

[0024] [ Figure 6 ] is a diagram for explaining an example of a magnetic sensor according to the second embodiment.

[0025] [ Figure 7 ] is a diagram showing the planar shape of a conventional magnetic sensor that does not have a protruding portion.

[0026] [Figure 8 This is a diagram showing the simulation results of the magnitude of the internal magnetic field in the sensing element when an external magnetic field of a predetermined magnitude is applied to the magnetic sensor.

[0027] [ Figure 9 The figure shows an example of a magnetic sensor with one sensing element.

[0028] [ Figure 10 [Figures illustrating Embodiment 1 and Modifications 1 to 4 of the magnetic sensor.]

[0029] Explanation of reference numerals in the attached figures

[0030] 1, 2… Magnetic sensor, 1', 2'… Existing magnetic sensor, 10… Substrate, 30… Sensing part, 31… Sensing element, 32… Connecting part, 33… Terminal part, 40… Protrusion, 101… Soft magnetic layer, 102… Magnetic domain suppression layer, 103… Conductive layer, 311… Wide portion, 312… Tapered portion Detailed Implementation

[0031] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0032] [First Implementation]

[0033] (The configuration of the magnetic sensor 1 according to the first embodiment is applied)

[0034] Figure 1 The figure illustrates an example of a magnetic sensor 1 using the first embodiment (hereinafter referred to as the first embodiment).

[0035] Figure 1 The figure illustrates a first embodiment of the magnetic sensor. (A) is a top view of the magnetic sensor, and (B) is a cross-sectional view along line II-II in (A).

[0036] like Figure 1 As shown in (A), the magnetic sensor 1 using the first embodiment includes: a non-magnetic substrate 10; a sensing portion 30 disposed on the substrate 10, which includes a soft magnetic layer and senses a magnetic field; and a protrusion 40, which includes a soft magnetic layer.

[0037] use Figure 1 (A) The planar structure of the magnetic sensor 1 will be described. As an example, the magnetic sensor 1 has a quadrilateral planar shape. The planar shape of the magnetic sensor 1 is several millimeters square. For example, the length of the long side is 4mm to 6mm, and the length of the short side is 3mm to 5mm. It should be noted that the size of the planar shape of the magnetic sensor 1 can also be other values.

[0038] First, the sensing section 30 formed in the magnetic sensor 1 will be described. The sensing section 30 includes: a plurality of sensing elements 31 with a rectangular shape having a long side and a short side; a connecting section 32 that connects adjacent sensing elements 31 in series in a zigzag shape; and a terminal section 33 for connecting a wire for supplying current. It should be noted that, respectively, the long side direction corresponds to... Figure 1 (A) The left and right directions correspond to the short side direction, and the up and down directions correspond to the short side direction. Furthermore, in the magnetic sensor 1, the sensing element 31 is a magnetoresistive effect element that senses the magnetic field or changes in the magnetic field. That is, the magnetic field or changes in the magnetic field are measured by utilizing the impedance change of the sensing section 30, which is connected in series with the sensing element 31. In the following text, the impedance of the sensing section 30 is sometimes referred to as the impedance of the magnetic sensor 1. It should be noted that the magnetic field is sometimes referred to as a magnetic force field.

[0039] Here, as Figure 1 As shown in (A), the magnetic sensor 1 has multiple sensing elements 31 arranged in a rectangular shape with a width W1 in the short side direction and a length L1 in the long side direction. These multiple sensing elements 31 are arranged with a gap G1 along the short side direction. It should be noted that sometimes the first, second, third, ... of the multiple sensing elements 31 arranged along the short side direction, counted from the bottom of the paper, are referred to as line 1, line 2, line 3, ... respectively.

[0040] However, in Figure 1 (A) shows multiple sensing elements 31, but there can also be only one sensing element 31. Alternatively, more than eight sensing elements as shown in the figure can be provided.

[0041] Connecting portions 32 are provided at the ends of sensing elements 31, connecting adjacent sensing elements 31 in series at their ends along the long side in a zigzag shape. For example, in Embodiment 1 of the magnetic sensor shown in Table 1 below, there are 24 sensing elements 31, and therefore 23 connecting portions 32.

[0042] It should be noted that there is also the following situation: in other embodiments, when the sensing element 31 is a single element, the connecting part 32 is not present.

[0043] Terminal portions 33 are respectively provided at two ends of the sensing element 31 that are not connected to the connecting portion 32. The terminal portions 33 function as solder pads for connecting wires used to supply current. The terminal portions 33 are only large enough to connect wires. It should be noted that... Figure 1 In (A), both terminal portions 33 are located on the right side of the paper, but they can also be located on the left side, or they can be located separately on the left and right sides.

[0044] Further, the magnetic sensor 1 is provided with the protruding portions 40 at both ends in the long direction of the sensing element 31. More specifically, the protruding portions 40 are provided so as to protrude from both ends in the long direction of the sensing element 31 to the long direction side. That is, the protruding portions 40 protrude toward the long direction of the sensing element 31. The protruding portions 40 are provided in a rectangular shape having a width W1 (which is equal to the width of the sensing element 31) in the short direction and a length L2 in the long direction.

[0045] The protruding portions 40 on the side from which the magnetic lines of force are input from the outside induce the magnetic lines of force from the outside with respect to the sensing element 31. Further, the protruding portions 40 on the side from which the magnetic lines of force are output from the sensing element 31 induce the magnetic lines of force that have passed through the sensing element 31 so as to pass through the protruding portions 40 as they are. That is, the protruding portions 40 function as a magnetic yoke that induces the magnetic lines of force. Therefore, the protruding portions 40 contain a soft magnetic body (a soft magnetic body layer 101 described later) through which the magnetic lines of force easily pass.

[0046] Here, the protruding portions 40 protrude toward the long direction of the sensing element 31. However, the protruding portions 40 can also protrude in a direction different from (crossing) the long direction, but by making the protruding portions 40 protrude in the long direction, the magnetic lines of force are easily induced as described later. Also, in the case where the magnetic sensor 1 is provided with a plurality of sensing elements 31, the protruding portions 40 protrude from the sensing portion 30 in a comb shape.

[0047] Next, the cross-sectional structure of the magnetic sensor 1 will be described using Figure 1 (B). As an example, the magnetic sensor 1 is provided with four soft magnetic body layers 101a, 101b, 101c, and 101d from the substrate 10 side. Further, a magnetic domain suppression layer 102a that suppresses the generation of a closed magnetic domain in the soft magnetic body layers 101a and 101b is provided between the soft magnetic body layer 101a and the soft magnetic body layer 101b. Further, the sensing portion 30 is provided with a magnetic domain suppression layer 102b that suppresses the generation of a closed magnetic domain in the soft magnetic body layers 101c and 101d between the soft magnetic body layer 101c and the soft magnetic body layer 101d. Further, the sensing portion 30 is provided with a conductive body layer 103 that reduces the resistance (here, referred to as the resistance value) of the sensing portion 30 between the soft magnetic body layer 101b and the soft magnetic body layer 101c. In the case where the soft magnetic body layers 101a, 101b, 101c, and 101d are not distinguished from each other, it is written as the soft magnetic body layer 101. In the case where the magnetic domain suppression layers 102a and 102b are not distinguished from each other, it is written as the magnetic domain suppression layer 102.

[0048] The substrate 10 is a substrate formed of a non-magnetic body, and examples thereof include an oxide substrate such as glass or sapphire, a semiconductor substrate such as silicon, a metal substrate such as aluminum, stainless steel, or a metal on which nickel-phosphorus plating has been performed, and the like. Hereinafter, the substrate 10 will be described assuming that it is glass.

[0049] The soft magnetic layer 101 is composed of a soft magnetic body of an amorphous alloy exhibiting a magnetic impedance effect. As the soft magnetic body constituting the soft magnetic layer 101, an amorphous alloy obtained by adding high-melting-point metals such as Nb, Ta, and W to an alloy having Co as a main component is preferably used. As such an alloy having Co as a main component, CoNbZr, CoFeTa, CoWZr, CoFeCrMnSiB, and the like can be given. The thickness of the soft magnetic layer 101 is, for example, 100 nm to 1 μm.

[0050] Here, the soft magnetic body is a so-called material having a small coercive force, that is, a material easily magnetized by an external magnetic field, but quickly returns to a state having no magnetization or a state having a small magnetization if the external magnetic field is removed.

[0051] In addition, in the present specification, the so-called amorphous alloy or amorphous metal refers to a substance having a structure not having an atomic order arrangement like a crystal and formed by a sputtering method or the like.

[0052] The magnetic domain suppression layer 102 suppresses the formation of a closed magnetic domain in the soft magnetic layers 101 disposed above and below the magnetic domain suppression layer 102.

[0053] Generally, in the soft magnetic layer 101, a plurality of magnetic domains having different directions of magnetization are easily formed. In this case, a closed magnetic domain having a ring-like direction of magnetization is formed. If the external magnetic field becomes large, the magnetic wall moves, the area of the magnetic domain having the same direction of magnetization as the direction of the external magnetic field becomes large, and the area of the magnetic domain having the opposite direction of magnetization as the direction of the external magnetic field becomes small. Furthermore, if the external magnetic field further becomes large, in the magnetic domain having a different direction of magnetization from the direction of the external magnetic field, magnetization rotation occurs in such a manner that the direction of magnetization and the direction of the external magnetic field are oriented in the same direction. Furthermore, finally, the magnetic wall existing between the adjacent magnetic domains disappears, and becomes one magnetic domain (single magnetic domain). That is, if the closed magnetic domain is formed, the Barkhausen effect in which the magnetic wall constituting the closed magnetic domain discontinuously moves in steps in accordance with the change in the external magnetic field occurs. The discontinuous movement of the magnetic wall becomes noise in the magnetic sensor 1, and it is possible that the reduction in S / N in the output obtained from the magnetic sensor 1 occurs. The magnetic domain suppression layer 102 suppresses the formation of a plurality of magnetic domains having a small area in the soft magnetic layers 101 disposed above and below the magnetic domain suppression layer 102. Thereby, the formation of the closed magnetic domain can be suppressed, and thus the generation of noise caused by the discontinuous movement of the magnetic wall can be suppressed. Note that, for the magnetic domain suppression layer 102, the effect that the number of formed magnetic domains is reduced, that is, the size of the magnetic domain is increased, can be obtained compared to the case where the magnetic domain suppression layer 102 is not included.

[0054] As such a magnetic domain suppressing layer 102, a non-magnetic substance such as Ru, SiO2, a non-magnetic amorphous metal such as CrTi, AlTi, CrB, CrTa, CoW, and the like can be given. The thickness of such a magnetic domain suppressing layer 102 is, for example, 10 nm to 100 nm.

[0055] The electrically conductive layer 103 reduces the resistance of the sensing portion 30. In more detail, the electrically conductive layer 103 has higher electric conductivity than the soft magnetic layer 101, and thus the resistance of the sensing portion 30 is reduced compared to the case where the electrically conductive layer 103 is not included. The magnetic sensor 1 measures a magnetic field or a change in a magnetic field in the form of a change (denoted as ΔZ) in impedance (denoted as Z hereinafter) when an alternating current flows between the two terminal portions 33. At this time, the higher the frequency of the alternating current, the larger the change rate ΔZ / ΔH (hereinafter, change rate of impedance ΔZ / ΔH) of the impedance Z with respect to a change (denoted as ΔH here) in an external magnetic field. However, if the frequency of the alternating current is increased in the state where the electrically conductive layer 103 is not included, the change rate ΔZ / ΔH of the impedance is rather reduced due to a parasitic capacitance in the state where the magnetic sensor 1 is made. If the resistance of the sensing portion 30 is denoted as R, the parasitic capacitance is denoted as C, and the magnetic sensor 1 is made as a parallel circuit of the resistance R and the parasitic capacitance C, the relaxation frequency f0 of the magnetic sensor 1 is represented by Expression (1).

[0056] [Mathematical Expression 1]

[0057]

[0058] As is clear from Expression (1), if the parasitic capacitance C is large, the relaxation frequency f0 is small, and if the frequency of the alternating current is higher than the relaxation frequency f0, the change rate ΔZ / ΔH of the impedance is rather reduced. Therefore, the resistance R of the sensing portion 30 is reduced by providing the electrically conductive layer 103, and thus the relaxation frequency f0 is increased.

[0059] As such an electrically conductive layer 103, a metal or an alloy having high electric conductivity is preferably used, and a metal or an alloy having high electric conductivity and being non-magnetic is more preferably used. As such an electrically conductive layer 103, a metal such as Al, Cu, Ag, Au, and the like can be given. The thickness of the electrically conductive layer 103 is, for example, 10 nm to 1 μm. For the electrically conductive layer 103, it is only necessary to reduce the resistance of the sensing portion 30 compared to the case where the electrically conductive layer 103 is not included.

[0060] Note that the upper and lower soft magnetic layers 101 sandwiching the magnetic domain suppressing layer 102, and the upper and lower soft magnetic layers 101 sandwiching the electrically conductive layer 103 are antiferromagnetically coupled (AFC) to each other. By antiferromagnetically coupling the upper and lower soft magnetic layers 101, the demagnetizing field is suppressed, and the sensitivity of the magnetic sensor 1 is improved.

[0061] (Magnetic sensor)

[0062] A magnetic sensor 1 to which the embodiment of the present application is applied can be manufactured as described below.

[0063] First, on the substrate 10, a photoresist pattern covering portions other than the planar shape of the inductive element 30 and the protruding portion 40 is formed on the surface of the substrate 10 using a known photolithography technique. Next, on the substrate 10, a soft magnetic layer 101a, a magnetic domain control layer 102a, a soft magnetic layer 101b, a conductor layer 103, a soft magnetic layer 101c, a magnetic domain control layer 102b, and a soft magnetic layer 101d are sequentially stacked using, for example, a sputtering method. Then, the soft magnetic layer 101a, the magnetic domain control layer 102a, the soft magnetic layer 101b, the conductor layer 103, the soft magnetic layer 101c, the magnetic domain control layer 102b, and the soft magnetic layer 101d stacked on the photoresist are removed together with the photoresist. Thus, on the substrate 10, a laminate formed of the soft magnetic layer 101a, the magnetic domain control layer 102a, the soft magnetic layer 101b, the conductor layer 103, the soft magnetic layer 101c, the magnetic domain control layer 102b, and the soft magnetic layer 101d, which have been processed into the planar shape of the inductive element 30 and the protruding portion 40, remains. The laminate formed of the soft magnetic layer 101a, the magnetic domain control layer 102a, the soft magnetic layer 101b, the conductor layer 103, the soft magnetic layer 101c, the magnetic domain control layer 102b, and the soft magnetic layer 101d, which have been processed into the planar shape of the inductive element 30 and the protruding portion 40, is formed as described above. Figure 1 (B) shown in the laminate structure.

[0064] For the soft magnetic layer 101, uniaxial magnetic anisotropy is imparted in a direction intersecting the long side direction, for example, the short side direction. Note that the direction intersecting the long side direction can have an angle of more than 45° and less than 90° with respect to the long side direction. The uniaxial magnetic anisotropy can be imparted by performing, for the inductive element 31 formed on the substrate 10, heat treatment at 400°C in a rotating magnetic field of, for example, 3 kG (0.3 T) (heat treatment in a rotating magnetic field) and heat treatment at 400°C in a static magnetic field of 3 kG (0.3 T) after the heat treatment in the rotating magnetic field (heat treatment in a static magnetic field). Instead of the heat treatment in the rotating magnetic field and the heat treatment in the static magnetic field, the uniaxial magnetic anisotropy can also be imparted by using a magnetron sputtering method at the time of stacking the soft magnetic layer 101 constituting the inductive element 31. That is, the magnetic field formed by a magnet (magnetic stone) used in the magnetron sputtering method imparts the uniaxial magnetic anisotropy to the soft magnetic layer 101 at the same time as the stacking of the soft magnetic layer 101.

[0065] In the manufacturing method described above, the connecting portion 32, the terminal portion 33, and the protruding portion 40 are formed simultaneously with the inductive element 31 as one body.

[0066] The connecting portion 32 and the terminal portion 33 can be formed of conductive metals such as Al, Cu, Ag, and Au. Alternatively, conductive metals such as Al, Cu, Ag, and Au can be laminated on the connecting portion 32 and the terminal portion 33, which are integrally formed with the sensing element 31.

[0067] Furthermore, the protrusion 40 may be made of a different type of soft magnetic material than the sensing element 31.

[0068] (The relationship between magnetic field and impedance)

[0069] Here, use Figure 2 The relationship between the magnetic field applied in the long side direction of the sensing element 31 of the magnetic sensor and the impedance of the sensing part 30 will be explained. Figure 2 In the diagram, the horizontal axis represents the magnetic field H, and the vertical axis represents the impedance Z.

[0070] like Figure 2 As shown, for the impedance Z of the sensing unit 30, the value Z0 is used when the magnetic field H applied in the long side direction of the sensing element 31 is 0. Furthermore, the impedance Z increases as the magnetic field H increases, reaching its maximum value Zk when the magnetic field H becomes an anisotropic magnetic field Hk. Moreover, it decreases when the magnetic field H is larger than the anisotropic magnetic field Hk. It should be noted that the change in impedance from Z0 to the maximum value Zk is recorded as the impedance change ΔZmax.

[0071] Within the range where the magnetic field H is less than the anisotropic magnetic field Hk, when the portion of the change in impedance Z ΔZ that is larger relative to the change in magnetic field H ΔH, i.e. the portion of the impedance change rate ΔZ / ΔH that is larger, the slight change in magnetic field H ΔH can be extracted as the change in impedance Z ΔZ. Figure 2 In this context, the center of a magnetic field H with a large impedance change rate ΔZ / ΔH is denoted as magnetic field Hb. That is, the vicinity of magnetic field Hb can be measured with high precision. Figure 2 The change in magnetic field H, denoted by the arrow indicating the range of ΔH, is ΔH.

[0072] Here, the sensitivity is calculated by dividing the maximum impedance change rate ΔZ / ΔH (i.e., the change in impedance per unit magnetic field Hb, Zmax) by the impedance Zb at Hb. A higher sensitivity Zmax / Zb indicates a greater magnetoimpedance effect, making it easier to measure the magnetic field or its changes. In other words, the steeper the change in impedance Z relative to the magnetic field H, the higher the sensitivity Zmax / Zb. Therefore, a smaller anisotropic magnetic field Hk is preferable. Furthermore, a larger impedance change ΔZmax is also desirable.

[0073] That is, in the magnetic sensor, it is preferable that the sensitivity Zmax / Zb be high, and for this, it is preferable that the anisotropic magnetic field Hk be small. In addition, it is preferable that the change amount ΔZmax of the impedance be large.

[0074] Note that, in the following description, the sensitivity Zmax / Zb is described as the sensitivity Smax. In addition, the magnetic field Hb is sometimes referred to as the bias magnetic field Hb.

[0075] (Action of the magnetic sensor 1)

[0076] Next, the action of the magnetic sensor 1 to which the first embodiment is applied is described in comparison with a conventional magnetic sensor (hereinafter, described as a conventional magnetic sensor) 1' that does not have the protruding portion 40.

[0077] Figure 3 A drawing is shown to illustrate the planar shape of the conventional magnetic sensor 1' that does not have the protruding portion 40.

[0078] The conventional magnetic sensor 1' has the same configuration as the magnetic sensor 1 shown in (A) except for not having the protruding portion 40. More specifically, the conventional magnetic sensor 1' is configured of the sensing portion 30 including the plurality of sensing elements 31 and the connection portion 32, the terminal portion 33, and the non-magnetic substrate 10. Figure 1 (A) shown in (A). More specifically, the conventional magnetic sensor 1' is configured of the sensing portion 30 including the plurality of sensing elements 31 and the connection portion 32, the terminal portion 33, and the non-magnetic substrate 10.

[0079] Figure 4 A drawing is shown to illustrate the simulation results of the magnitude of the internal magnetic field in the sensing portion 30 in a case where a predetermined magnitude of external magnetic field is applied to the magnetic sensor 1, 1'. Figure 4 (A) in (A) shows the magnitude of the internal magnetic field in the sensing portion 30 in the form of a distribution along the longitudinal direction, Figure 4 (B) shows the internal magnetic field in each line of the magnetic sensor 1, 1'. Note that, Figure 4 (A) shows the shape of the sensing elements 31 and the connection portion 32, the protruding portion 40 with respect to the magnetic sensor 1, 1' in addition to the magnitude of the magnetic field to which the sensing portion 30 is subjected.

[0080] Note that, in this simulation, the external magnetic field applied to the magnetic sensor 1, 1' is made to be 10 Oe. In addition, the number of the sensing elements 31 in the magnetic sensor 1, 1' is made to be 24 (line 1 to line 24), the width W1 of the sensing element 31 is made to be 0.1 mm, the length L1 is made to be 4.2 mm, the gap G1 of the adjacent sensing elements 31 to each other is made to be 0.05 mm, and further the length L2 of the protruding portion 40 of the magnetic sensor 1 is made to be 1.0 mm.

[0081] First, Figure 4In (A), the magnitude of the internal magnetic field in the sensing portion 30 of the magnetic sensor 1, 1' is shown in the form of a distribution along the long direction. The horizontal axis is the position X (mm) in the long direction of the sensing portion 30, and the vertical axis is the magnitude of the internal magnetic field (Oe) at the position X. Note that only the result of the region IV indicated by a broken line is shown, not the result of the entire long direction of the sensing portion 30.

[0082] As shown in Figure 4 In the magnetic sensor 1, the magnitude of the internal magnetic field in the sensing portion 30 is larger than that in the existing magnetic sensor 1' as shown in (A). Also, the sharp decrease in the magnetic field at the end portion in the long direction observed in the existing magnetic sensor 1' is suppressed in the magnetic sensor 1. Thus, the internal magnetic field becomes uniform in the long direction.

[0083] Next, in Figure 4 In (B), the magnitude of the internal magnetic field in each of the lines 1 to 24 of the sensing element 31 provided in the magnetic sensor 1, 1' is shown. The horizontal axis is the number N of the corresponding line, and the vertical axis is the average value of the magnitude of the internal magnetic field (Oe) in the line N. Note that the error bar indicates the distribution of the magnitude of the internal magnetic field in the line N.

[0084] As shown in Figure 4 In the magnetic sensor 1, the magnitude of the internal magnetic field in all the lines (lines 1 to 24) of the sensing element 31 is larger than that in the existing magnetic sensor 1' as shown in (B). Also, the distribution of the magnitude of the internal magnetic field (error bar) is smaller in all the lines. That is, in the magnetic sensor 1, the internal magnetic field in all the lines becomes more uniform in the long direction than in the existing magnetic sensor 1'.

[0085] As a result, in the magnetic sensor 1, as shown in Figure 4 (A), (B), the magnetic field is concentrated in the sensing element 31, and the magnetic flux density becomes high. Also, the decrease in the magnetic flux density in the end portion of the sensing element 31 is suppressed. Also, the magnitude of the magnetic field borne by the sensing element 31 becomes uniform in the long direction, and the magnetic field borne by the sensing element 31 becomes larger than in the existing magnetic sensor 1'.

[0086] Here, the effect of the protruding portion 40 is described. Figure 5 A graph showing the magnitude of the internal magnetic field in the entire long direction of the magnetic sensor in the case where an external magnetic field is applied. Figure 5 (A) corresponds to the existing magnetic sensor 1' which does not have a protruding portion, Figure 5 (B) corresponds to the magnetic sensor 1 which has a protruding portion. Note that Figure 5 The arrow in (A), (B) indicates the current applied when the magnetic sensor is made to act.

[0087] Figure 5In the existing magnetic sensor 1' shown in (A), the internal magnetic field becomes strong in the central portion of the inductive element 31, but sharply decreases at both ends in the long direction. In addition, as shown in (A), if a current is applied to this existing magnetic sensor 1', the current flows from both ends where the internal magnetic field is weak. As a result, in the magnetic sensor 1', the generated impedance change decreases, and there is a concern that the sensitivity decreases. Figure 5

[0088] On the other hand, Figure 5 In the magnetic sensor 1 shown in (B), because of the presence of the protruding portion 40, magnetic lines of force from a wide range outside are induced to the inductive element 31. In addition, the induction is performed in such a manner that the magnetic lines of force that have passed through the inductive element 31 pass through the protruding portion 40 as they are. Therefore, the sharp decrease in the internal magnetic field at both ends in the long direction of the inductive element 31 is suppressed. In other words, the region where the internal magnetic field is weak moves (or shifts) from both ends of the inductive element 31 to the end portion of the protruding portion 40. Moreover, in this magnetic sensor 1, the internal magnetic field of the portion through which the current flows is strong, and becomes uniform in the long direction. As a result, in the magnetic sensor 1, compared with the magnetic sensor 1', the generated impedance change increases, and the sensitivity is improved.

[0089] In Table 1, the values of the average magnetic field, the anisotropic magnetic field Hk, the change amount ΔZmax of the impedance, and the sensitivity Smax are shown for the magnetic sensor 1 to which the embodiment of the present application is applied and the existing magnetic sensor 1'.

[0090] The shape in Table 1 indicates correspondence to any one of the magnetic sensors 1, 1' explained in Figure 1 , 3 Embodiments 1 to 3 and Comparative Examples 1, 2 described in Table 1 correspond to any one of the magnetic sensors 1, 1' explained in Figure 1 (A) shows the magnetic sensor 1 to which the first embodiment is applied, and shape 1' corresponds to the existing magnetic sensor 1' shown in Figure 3 (A).

[0091] Embodiments 1 to 3 and Comparative Examples 1, 2 described in Table 1 are magnetic sensors in which the substrate 10 is a glass substrate, the soft magnetic layers 101a to 101d are Co 80 Nb 17 Zr3layers, the magnetic domain control layers 102a, 102b are CrTi layers having a thickness of 25 nm, and the electrically conductive layer 103 is an Ag layer having a thickness of 400 nm.

[0092] The average magnetic field in Table 1 is found using the simulation results by the computer described above. More specifically, in the case where an external magnetic field of 10 Oe is applied to the magnetic sensor, the average value of the internal magnetic field in the length direction in each inductive element 31 of the magnetic sensor is averaged using all the inductive elements 31 (all the lines) possessed by the magnetic sensor, and the value is found.​

[0093] Each value of the anisotropic magnetic field Hk, the change amount of the impedance ΔZmax, and the sensitivity Smax in Table 1 is found by measuring a 100 MHz high-frequency current flowing between the 2 terminal portions 33 in each magnetic sensor.

[0094] [Table 1]

[0095]

[0096] Comparative Example 1 and Example 1 each have 24 inductive elements 31 with a width W1 = 0.1 mm and a length L1 = 4.2 mm arranged in a manner that separates a gap G1 = 0.05 mm. In addition, Example 1 has a protruding portion 40 with a length L2 = 1.0 mm.

[0097] As shown in Table 1, in Example 1, the average magnetic field is larger than that of Comparative Example 1. In addition, the anisotropic magnetic field Hk is reduced, and the change amount of the impedance ΔZmax and the sensitivity Smax are improved.

[0098] Comparative Example 2 and Examples 2 and 3 differ from Comparative Example 1 and Example 1 in that the length L1 of the inductive element 31 is 3.2 mm. In addition, respectively, Example 2 has a protruding portion 40 with a length L2 = 1.0 mm, and Example 3 has a protruding portion 40 with a length L2 = 1.5 mm.

[0099] As shown in Table 1, in Examples 2 and 3, the average magnetic field is larger than that of Comparative Example 2. In addition, the anisotropic magnetic field Hk is reduced, and the change amount of the impedance ΔZmax and the sensitivity Smax are improved. In Example 3, which has a longer protruding portion 40, the average magnetic field is larger than that of Example 2. In addition, the anisotropic magnetic field Hk is reduced, and the change amount of the impedance ΔZmax and the sensitivity Smax are improved.

[0100] As described above, in the magnetic sensor 1 (Examples 1 to 3) to which the embodiment of the present application is applied, the sensitivity is improved with respect to the conventional magnetic sensor 1' (Comparative Examples 1 and 2) by having the protruding portion 40.

[0101] In addition, the improvement in the sensitivity is observed by increasing the length L2 of the protruding portion 40, and thus, in the magnetic sensor 1, the desired sensitivity can be obtained by adjusting the size of the protruding portion 40.

[0102] [2nd Embodiment]

[0103] (Configuration of the Magnetic Sensor 2 to which the 2nd Embodiment is Applied)

[0104] Next, an example of the magnetic sensor 2 to which the second embodiment (hereinafter, referred to as the second embodiment) is applied will be described.

[0105] Figure 6 For the description of the second embodiment of the magnetic sensor, (A) is a plan view of the magnetic sensor 2, and (B) is an enlarged view of the region III in (A).

[0106] Note that, in the following description of the second embodiment, the same components as those of the first embodiment (refer to FIG. 1) are denoted by the same reference numerals, and the description thereof will be omitted in some cases. Figure 1 As shown in (A), like the magnetic sensor 1 to which the first embodiment is applied, the magnetic sensor 2 includes a non-magnetic substrate 10, a sensing portion 30 provided on the substrate 10 and including a soft magnetic layer and sensing a magnetic field, and a protruding portion 40 including a soft magnetic layer.

[0107] Figure 6 Note that, like the magnetic sensor 1 to which the first embodiment is applied, the magnetic sensor 2 has the same cross-sectional structure (refer to (B)).

[0108] Note that, like the magnetic sensor 1 to which the first embodiment is applied, the magnetic sensor 2 has the same cross-sectional structure (refer to (B)). Figure 1

[0109] Like the magnetic sensor 1, the sensing portion 30 of the magnetic sensor 2 includes a plurality of sensing elements 31, connection portions 32 connecting the adjacent sensing elements 31 in series in a meandering shape, and terminal portions 33 connecting electric wires for supplying a current.

[0110] As shown in (B), each of the two end portions of the sensing element 31 in the longitudinal direction has a wide portion 311 having a width in the lateral direction larger than that of the central portion, and a tapered portion 312 in which the width gradually narrows from the wide portion 311 toward the central portion. The tapered portion 312 has two edges 312a, 312b extending in the longitudinal direction, and the interval between the two edges 312a, 312b narrows as it approaches the central portion of the sensing element 31. Figure 6 In addition, in the example of (B), the inclination angles θa, θb of each of the edges 312a, 312b of the tapered portion 312 with respect to the longitudinal direction are 135 degrees. The inclination angles θa, θb can be set to a range of 110 degrees or more and 150 degrees or less, for example, although they vary depending on the width of the wide portion 311, the width of the central portion of the sensing element 31 in the lateral direction, and the like.

[0111] Figure 6 Here, as shown in (B), the inclination angles θa, θb of the edges 312a, 312b of the tapered portion 312 with respect to the longitudinal direction are 135 degrees. The inclination angles θa, θb can be set to a range of 110 degrees or more and 150 degrees or less, for example, although they vary depending on the width of the wide portion 311, the width of the central portion of the sensing element 31 in the lateral direction, and the like.

[0112] Here, as shown in (B), the inclination angles θa, θb of the edges 312a, 312b of the tapered portion 312 with respect to the longitudinal direction are 135 degrees. The inclination angles θa, θb can be set to a range of 110 degrees or more and 150 degrees or less, for example, although they vary depending on the width of the wide portion 311, the width of the central portion of the sensing element 31 in the lateral direction, and the like. Figure 6 ​​​As shown in (A), the multiple sensing elements 31 in the magnetic sensor 2 are configured with a width of W1 at the center of the long side, a width of W2 at the end of the wide portion 311, and a length of L1 in the long side direction. It should be noted that the width W2 is larger than the width W1.

[0113] The plurality of sensing elements 31 are arranged with gaps along the short side direction. In the portion of the sensing element 31 with a width of W2 (the wider portion 311 at the end of the long side direction), the gap is G1; in the portion of the sensing element 31 with a width of W1 (the central portion of the long side direction), the gap is G2. It should be noted that, similar to the magnetic sensor 1, sometimes the first, second, third, ... of the plurality of sensing elements 31 arranged along the short side direction, counted from below the paper, are respectively referred to as line 1, line 2, line 3, ...

[0114] The connecting portion 32 is disposed between the ends of the sensing elements 31 along their long sides, connecting adjacent sensing elements 31 in series in a zigzag shape. In the magnetic sensor 2, since the ends of the sensing elements 31 have a wide portion 311, adjacent sensing elements 31 are connected in the portion of the wide portion 311.

[0115] The protrusion 40 is a rectangle with a width equal to the width of the short side of the wide portion 311 of the sensing element 31. Like the magnetic sensor 1, the protrusion 40 protrudes along its long side. Furthermore, the protrusion 40 is a rectangle with a width W2 equal to the width of the wide portion 311 in the short side and a length L2 in the long side. Therefore, compared to the case where the width of the protrusion 40 is smaller than the width of the sensing element 31, it is easier to induce magnetic field lines from the outside to the sensing element 31. Additionally, it is easier to induce magnetic field lines passing through the sensing element 31 to the protrusion 40.

[0116] (The function of magnetic sensor 2)

[0117] Next, the function of the magnetic sensor 2 using the second embodiment will be compared and explained with that of the conventional magnetic sensor 2' which does not have the protrusion 40.

[0118] Figure 7 A diagram showing the planar shape of an existing magnetic sensor 2' without the protrusion 40.

[0119] Figure 7 The existing magnetic sensor 2' shown has the same characteristics as the one shown, except that it does not have the protrusion 40. Figure 6 (A) shows the same configuration as the magnetic sensor 2. More specifically, the conventional magnetic sensor 2' is composed of a sensing part 30 including a plurality of sensing elements 31 having a wide portion 311 and a tapered portion 312, a connecting portion 32, a terminal portion 33, and a non-magnetic substrate 10.

[0120] Figure 8 A graph showing a simulation result of the magnitude of the internal magnetic field in the sensing portion 30 in a case where a predetermined magnitude of external magnetic field is applied to the magnetic sensor 2, 2' is shown. Figure 8 The magnitude of the internal magnetic field in the sensing portion 30 is shown in the form of a distribution along the long-side direction in (A), Figure 8 The internal magnetic field in each wire of the magnetic sensor 2, 2' is shown in (B). Note that, Figure 8 In (A), the shapes of the sensing element 31 and the connecting portion 32, the protruding portion 40 are shown in addition to the magnitude of the magnetic field received by the sensing portion 30, with respect to the magnetic sensor 2, 2'.

[0121] Note that, in this simulation, the external magnetic field applied to the magnetic sensor 2, 2' is made to be 100 Oe. In addition, the number of the sensing elements 31 in the magnetic sensor 2, 2' is made to be 8 (wire 1 to wire 8), the width W1 of the sensing element 31 is made to be 0.08 mm and W2 is made to be 0.38 mm, the length L1 is made to be 3.9 mm, the gap G1 of the adjacent sensing elements 31 to each other is made to be 0.12 mm and G2 is made to be 0.42 mm, the inclination angles θa = θb = 135 degrees, and the length L2 of the protruding portion 40 of the magnetic sensor 2 is made to be 1.0 mm.

[0122] As shown in Figure 8 As shown in (A), the internal magnetic field of the magnetic sensor 2 having the protruding portion 40 becomes larger than that of the existing magnetic sensor 2' not having the protruding portion 40. In addition, the reduction of the magnetic field at the end portion in the long-side direction is suppressed.

[0123] Next, in Figure 8 In (B), the magnitude of the internal magnetic field in each of the wires 1 to 8 of the sensing element 31 provided in the magnetic sensor 2, 2' is shown. The horizontal axis is the number N of the corresponding wire, and the vertical axis is the average value (Oe) of the magnitude of the internal magnetic field in the wire N. Note that, the error bar indicates the distribution of the magnitude of the internal magnetic field in the wire N.

[0124] As shown in Figure 8 As shown in (B), in the magnetic sensor 2, the magnitude of the internal magnetic field in all of the wires (wires 1 to 8) of the sensing element 31 becomes larger than that of the existing magnetic sensor 2' not having the protruding portion 40.

[0125] In the magnetic sensor 2 to which the second embodiment is applied, the protruding portion 40 having a width equal to the width of the short-side direction of the wide-width portion 311 of the sensing element 31 is provided, whereby the magnetic lines of force from a wide range outside are induced to the sensing element 31. In addition, the induction is performed in such a manner that the magnetic lines of force passing through the sensing element 31 pass through the protruding portion 40 as they are.

[0126] As a result, in the magnetic sensor 2, compared with the conventional magnetic sensor 2', the magnetic field is concentrated in the sensing element 31, and the magnetic flux density becomes high. In addition, the decrease in the magnetic flux density in the end portion of the sensing element 31 is suppressed. Moreover, compared with the conventional magnetic sensor 2', the magnetic field applied to the sensing element 31 becomes large.

[0127] Further, referring to Figure 4 and Figure 8 , the internal magnetic field of the sensing element 31 in the magnetic sensor 2 becomes large compared with the magnetic sensor 1.

[0128] In the magnetic sensor 2, the wide portion 311 and the tapered portion 312 are provided in the end portion of the sensing element 31, and thus the above-described effect of inducing the magnetic flux line further becomes large compared with the magnetic sensor 1 in which the sensing element 31 is rectangular. As a result, in the magnetic sensor 2, compared with the magnetic sensor 1, the magnetic field applied to the sensing element 31 becomes large.

[0129] In Table 2, the values of the average magnetic field, the anisotropic magnetic field Hk, the change amount ΔZmax of the impedance, and the sensitivity Smax are shown for the magnetic sensor 2 to which the embodiment of the present application is applied and the conventional magnetic sensor 2'.

[0130] The shape in Table 2 corresponds to any one of the magnetic sensors 2, 2' described in Figure 6 , 7 . Specifically, the shape 2 corresponds to the magnetic sensor 2 to which the second embodiment is applied as shown in (A), and the shape 2' corresponds to the conventional magnetic sensor 2' as shown in (B). Figure 6 Figure 7

[0131] Like the Examples 1 to 3 and the Comparative Examples 1, 2 described in Table 1, the Example 4 and the Comparative Example 3 described in Table 2 are magnetic sensors in which the substrate 10 is a glass substrate, the soft magnetic layers 101a to 101d are Co 80 Nb 17 layers, the magnetic domain suppressing layers 102a, 102b are CrTi layers having a thickness of 25 nm, and the conductor layer 103 is an Ag layer having a thickness of 400 nm.

[0132] In addition, each of the values of the average magnetic field, the anisotropic magnetic field Hk, the change amount ΔZmax of the impedance, and the sensitivity Smax in Table 2 is obtained in the same manner as each of the values described in Table 1.

[0133] [Table 2]

[0134]

[0135] ​​Comparative Example 3 and Example 4 each have 8 inductive elements 31 with a width Wl = 0.08 mm, W2 = 0.38 mm, a length LI = 3.9 mm, and an inclination angle θa = θb = 135 degrees of the tapered portion 312 arranged with a gap Gl = 0.12 mm, G2 = 0.42 mm. In addition, only Example 4 has the protruding portion 40 with a length L2 = 1.0 mm.

[0136] As shown in Table 2, in Example 4, the average magnetic field is larger compared to Comparative Example 3. In addition, the anisotropic magnetic field Hk is reduced, and the sensitivity Smax is improved.

[0137] Further, in Example 4 having the inductive element 31 with the wide portion 311 and the tapered portion 312, the average magnetic field is larger compared to Examples 1 to 3 (see Table 1) having the inductive element 31 with a rectangular shape. In addition, the anisotropic magnetic field Hk is reduced, and the sensitivity Smax is improved.

[0138] As described above, in the magnetic sensor 2 (Example 4) to which the embodiment of the present application is applied, the sensitivity is improved compared to the conventional magnetic sensor 2' (Comparative Example 3) by having the protruding portion 40.

[0139] In addition, in the magnetic sensor 2 (Example 4) having the inductive element 31 with the wide portion 311 and the tapered portion 312, the sensitivity is improved compared to the magnetic sensor 1 (Examples 1 to 3) having the inductive element 31 with a rectangular shape. As described above, the improvement in sensitivity is observed by adding the wide portion 311 and the tapered portion 312, and thus, the desired sensitivity can be obtained by adjusting the shape of the inductive element 31.

[0140] The embodiments of the present application have been described above, but various modifications can be made as long as the gist of the present application is not deviated from.

[0141] For example, in the first and second embodiments, the magnetic sensors 1, 2 having a plurality of inductive elements 31 have been described, but in the magnetic sensor 3 having one inductive element 31 as shown in Figure 9 As shown in Table 2, in Example 4, the average magnetic field is larger compared to Comparative Example 3. In addition, the anisotropic magnetic field Hk is reduced, and the sensitivity Smax is improved.

[0142] In addition, for example, the width of the connection portion 32 can be adjusted in the magnetic sensors 1, 2, 3.

[0143] Here, Figure 10 A drawing for explaining a modification example in which the width of the connection portion 32 is adjusted for Example 1 of Table 1. Figure 10 (A) shows the planar shape of Example 1, Figure 10(B) to (E) show planar shapes of Modification Examples 1 to 4. Note that, Figure 10 In the magnetic sensor, a part of the structure of the substrate 10 and the like is omitted.

[0144] Figure 10 In (B) and (C), Modification Example 1 in which the width of the connection portion 32 in the long side direction is increased, and Modification Example 2 in which the width is further increased, are shown with respect to Example 1, respectively.

[0145] Here, as the width of the connection portion 32 in the long side direction is increased, the length LI of the inductive element 31 is increased. In Modification Examples 1 and 2, the length L2 of the protruding portion 40 is reduced in correspondence with the increase in the length LI, and is configured in such a manner that the sum of the lengths LI+L2 is equal to that in Example 1. Note that, as illustrated, among the plurality of inductive elements 31 of Modification Examples 1 and 2, the inductive element 31' arranged at the end portion in the short side direction is not connected to the connection portion 32 at one end in the long side direction (right side in the drawing). Thus, the length L2' of the protruding portion 40' protruding from the one end of the inductive element 31' is equal to the length L2 in Example 1.

[0146] In addition, Figure 10 Modification Example 3 shown in (D) is configured in such a manner that the sum of the lengths LI+L2 is equal to that in Example 1, and the width of the connection portion 32 is further increased, and as a result, does not have the protruding portion 40 (L2=0) protruding from the end portion of the inductive element 31. However, in the inductive element 31' arranged at the end portion in the short side direction, the protruding portion 40' protrudes from one end in the long side direction (right side in the drawing) with a length L2' equal to the length L2 of the protruding portion in Example 1.

[0147] In such a magnetic sensor having a plurality of inductive elements, it is sufficient that the protruding portion protruding from the end portion in the long side direction is provided in at least one inductive element.

[0148] Further, Figure 10 Modification Example 4 shown in (E) is different from Modification Example 3 only in the shape of the end portion in the long side direction of the inductive element 31' and the shape of the protruding portion 40'. More specifically, the inductive element 31' has a lobe portion 41a having a trapezoidal shape extending in the short side direction at the side (left side in the drawing) different from the end portion from which the protruding portion 40' protrudes in the end portion in the long side direction. In addition, the protruding portion 40' of the inductive element 31' has a lobe portion 41b having a substantially trapezoidal shape extending in the short side direction.

[0149] As described above, in addition to increasing the width of the connection portion 32, the inductive element 31 (31') and the protruding portion 40 (40') can be changed to shapes different from the rectangular shape.

[0150] The same effects as in Embodiment 1 can be obtained in the above-described modified examples 1 to 4. In more detail, the modified examples 1 to 4 function as magnetic sensors having values of the average magnetic field and Hk, ΔZmax, and Smax that are substantially the same as those of Embodiment 1.

[0151] In addition, in the magnetic sensors 1, 2, 3, the protruding portions 40 are exemplified as protruding from the end portions in the long direction of the sensing element 31 in the long direction (direction parallel to the long direction), but the protruding portions 40 can also protrude in a direction different from the long direction (direction intersecting the long direction). In other words, the protruding portions 40 can also be provided in a manner inclined with respect to the long direction.

[0152] Furthermore, in the magnetic sensors 1, 2, 3, the example in which the protruding portions 40 having the same length and the same shape are provided at both ends in the long direction of the sensing element 31 is described, but the lengths and shapes of the protruding portions 40 at both ends can also be made different. In addition, a protruding portion can also be provided only at an arbitrary one end in the long direction, like the protruding portion 40' in the above-described modified examples 3, 4.

Claims

1. A magnetic sensor, characterized in that, have: Non-magnetic substrate; Multiple sensing elements disposed on the substrate, each sensing element comprising a soft magnet, having a long side direction and a short side direction, having uniaxial magnetic anisotropy in the direction intersecting the long side direction, and sensing a magnetic field through a magnetoresistance effect, the sensing elements being arranged at intervals along the short side direction. A connecting portion, wherein the connecting portion connects the ends of the sensing elements adjacent to each other in the short-side direction in the long-side direction; and A protrusion protruding from the end of the long side of at least one of the sensing elements, the protrusion comprising a soft magnet. The sensing element has a wide portion at its end in the long side direction, where the width in the short side direction is larger than that in the central portion in the long side direction. The width of the protrusion in the short side direction is the same as the width of the wide portion in the short side direction. The connecting portion includes the soft magnet and is integrally formed with the protrusion and the sensing element. The connecting portion connects adjacent sensing elements at the wide portion.

2. The magnetic sensor as described in claim 1, characterized in that, The sensing element has a tapered shape whose width narrows from the wide portion to the central portion.

3. The magnetic sensor as described in claim 1, characterized in that, Having multiple of the aforementioned connecting portions, The multiple sensing elements are connected in series in a zigzag shape by the multiple connecting parts.

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