Method for processing surface of reticle and semiconductor manufacturing system

Abstract

A method for processing a surface of a reticle and a semiconductor manufacturing system. The method for processing a surface of a reticle includes removing a reticle from a reticle library and transferring the reticle to a processing device. The surface of the reticle is irradiated with incident ultraviolet (UV) radiation for a predetermined irradiation time while an ozone fluid is present on the surface of the reticle. The surface of the reticle is processed in the processing device. After processing, the reticle is transferred to an exposure device for a lithography operation to produce a photoresist pattern on a wafer. The surface of the wafer is imaged to produce an image of the photoresist pattern on the wafer. The image of the photoresist pattern is analyzed to determine a critical dimension uniformity of the photoresist pattern. If the critical dimension uniformity does not satisfy a threshold critical dimension uniformity, the predetermined irradiation time is increased.

Description

Technical Field

[0001] The embodiments disclosed herein relate to a method for processing the surface of a photomask and a semiconductor manufacturing system. Background Technology

[0002] During integrated circuit (IC) design, patterns for different steps in IC processing are created on a substrate. These patterns can be generated by projecting, for example, imaging, onto a photoresist layer on a wafer using extreme ultraviolet (EUV) radiation to create a photomask layout pattern. The lithography process transfers the reticle layout pattern to the wafer's photoresist layer so that etching, implantation, or other steps are applied only to predetermined areas of the wafer. When not in use, reticles, such as photomasks, can be stored in a reticle library under vacuum. After being removed from the reticle library and before application in the lithography process, the reticle needs to be processed to increase its reflectivity. Summary of the Invention

[0003] According to some embodiments disclosed herein, a method for processing the surface of a photomask includes removing a photomask from a photomask library, transferring the photomask to a processing apparatus, and releasing ozone fluid onto a surface of the photomask. This method also includes irradiating the surface of the photomask with incident ultraviolet (UV) radiation for a predetermined irradiation time while the ozone fluid is on the surface of the photomask, thereby processing the surface of the photomask. This method includes, after processing, transferring the photomask to an exposure apparatus for photolithography to generate a photoresist pattern on a wafer. This method further includes imaging a surface of the wafer to generate an image of the photoresist pattern on the wafer, analyzing the image of the photoresist pattern to determine the critical dimension uniformity of the photoresist pattern, and, if the determined critical dimension uniformity does not meet a critical critical dimension uniformity, increasing the predetermined irradiation time.

[0004] According to some embodiments of this disclosure, a method for processing the surface of a photomask includes processing the surface of a reflective photomask in a processing apparatus. This processing includes releasing an ozone fluid onto the surface of the photomask, and irradiating the surface of the photomask with an incident ultraviolet radiation beam from an ultraviolet source for a duration while the ozone fluid is on the surface of the photomask, thereby processing the surface of the photomask. This processing further includes focusing the reflected ultraviolet beam from the surface of the photomask onto a detector to generate a detection signal; monitoring the detection signal during the irradiation time; and stopping the processing of the surface of the photomask and ending the irradiation time when the percentage of the detection signal increases below a critical value within a specific time period. This method also includes transferring the photomask from the processing apparatus to an exposure apparatus for lithography operations after processing. This method further includes projecting the layout pattern of the photomask in the exposure apparatus onto a photoresist layer on a wafer using incident extreme ultraviolet (EUV) radiation from an extreme ultraviolet (EUV) source.

[0005] According to some embodiments disclosed herein, a semiconductor manufacturing system includes a main controller, an analysis module coupled to the main controller, and a wafer exchange system having an extendable robotic arm. The system includes a processing unit comprising a first photomask stage configured to mount a photomask, an ultraviolet (UV) light source, and a photodetector comprising a photodetector. The system also includes an exposure unit comprising a second photomask stage for mounting a photomask, an extreme ultraviolet (EUV) light source, a stage for supporting a wafer, and an optical system. The main controller commands the UV light source to turn on, emitting ultraviolet radiation from the UV light source, and processes the surface of the photomask in the first photomask stage of the processing unit by irradiating a surface of the photomask with the ultraviolet radiation from the UV light source. The main controller allows the release of ozone fluid from an ozone supply line above the surface of the photomask during irradiation with ultraviolet radiation. The main controller commands the photodetector of the processing unit to focus the reflected ultraviolet radiation from the surface of the photomask onto the photodetector of the photodetector to generate a detection signal and send the detection signal to the analysis module. The analysis module monitors the detection signal during the irradiation time and sends a command to the ultraviolet light source via the main controller to stop processing the surface of the photomask when the percentage of the detection signal increases below a critical value within a specific time period. After processing, the main controller commands the wafer exchange system to use an extendable robotic arm to transfer the photomask from the processing unit to the second photomask stage of the exposure unit for lithography. Furthermore, after the transfer, the main controller commands the extreme ultraviolet light source to turn on, emitting extreme ultraviolet radiation, and projects the layout pattern of the photomask onto the photoresist layer of the wafer through an optical system. Attached Figure Description

[0006] A better understanding of this disclosure can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be emphasized that, in accordance with industry standard practice, the features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the features may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figure 1 It is a process flow diagram illustrating the generation of photoresist patterns on a semiconductor substrate;

[0008] Figure 2 This illustration depicts a wafer exchange system for removing and processing a reduction mask according to some embodiments of the present disclosure;

[0009] Figure 3 This illustrates a process flow for generating photoresist patterns on a semiconductor substrate according to some embodiments disclosed herein.

[0010] Figure 4 This is a schematic diagram illustrating an exposure apparatus for generating photoresist patterns on a wafer;

[0011] Figure 5A and Figure 5B It is a cross-sectional view illustrating a reflective magnification mask structure and projecting the reflective magnification mask structure onto a semiconductor element in an exposure apparatus.

[0012] Figure 6 It is a detection system for drawing a photoresist pattern on a semiconductor substrate;

[0013] Figure 7A , Figure 7B , Figure 7C , Figure 7D ,and Figure 7E This is a processing apparatus illustrating, according to some embodiments of the present disclosure, for processing a magnifying mask, detecting reflected light from a reflective magnifying mask during processing, and showing the composition of the top layer of the magnifying mask before and after processing.

[0014] Figure 8 This is an illustration of a control system for processing a magnifying mask and projecting a layout pattern of the processed magnifying mask onto a semiconductor substrate, according to some embodiments of the present disclosure.

[0015] Figure 9 This illustrates a process for processing a magnifying mask and projecting the layout pattern of the processed magnifying mask onto a semiconductor substrate, according to some embodiments of this disclosure.

[0016] Figure 10A and Figure 10BThis is an apparatus for processing a magnifying mask and projecting the layout pattern of the processed magnifying mask onto a semiconductor substrate, according to some embodiments disclosed herein.

[0017] [Symbol Explanation]

[0018] 10: Semiconductor substrate

[0019] 15: Photoresist layer

[0020] 29: Patterned Radiation Beam

[0021] 30: Substrate

[0022] 34: Semiconductor components

[0023] 35: Multiple reflective layers

[0024] 37:Film

[0025] 39:Film

[0026] 40: Covering layer

[0027] 45: Absorption layer

[0028] 50: Radiation Beam

[0029] 50': Reflected beam

[0030] 51: Ultraviolet radiation beam, radiation beam

[0031] 51': Ultraviolet radiation beam, reflected beam

[0032] 55: Layout Pattern

[0033] 80: Reflective zoom mask structure, zoom mask, reflective mask

[0034] 100: Radiation source

[0035] 102: Photoresist Coating Operation

[0036] 104: Baking after coating

[0037] 105: Photomask Removal Operation

[0038] 106: Loading and Handling of Reducing Masks

[0039] 108: Mask Loading and Exposure Operation

[0040] 110: Post-exposure baking operation

[0041] 112: Development Operation

[0042] 150: Manufacturing Process

[0043] 200: Wafer Switching System

[0044] 202: Reduction Mask Library

[0045] 204: First movable segment

[0046] 205: First pivot point

[0047] 205a: Optical Components

[0048] 205b: Optical Components

[0049] 205c: Reflective photomask

[0050] 205d: Reduced projection optics

[0051] 205e: Reduced projection optics

[0052] 206: Robotic Device

[0053] 208: Second movable section

[0054] 212: Processing device

[0055] 214: Exposure apparatus

[0056] 240: Wafer Switching Controller

[0057] 300: Manufacturing Process

[0058] 302: Line

[0059] 400: Exposure device

[0060] 402: Reduced Mask Stage

[0061] 406: Vacuum Pressure Controller

[0062] 408: Pressure Sensor

[0063] 500: Sectional View

[0064] 550: Exposure Configuration

[0065] 560: Platform

[0066] 565: Platform Controller

[0067] 600: Detection System

[0068] 617: Uniform beam

[0069] 619: Focused Beam

[0070] 630: Analysis Module

[0071] 633: Image Processing Unit

[0072] 634: Lens

[0073] 635: Scanning Imaging Device

[0074] 660: Platform

[0075] 665: Platform Controller

[0076] 702: Delivery pipe

[0077] 704: Contamination Layer

[0078] 705: Ultraviolet Light Source - Controller

[0079] 706: Surface

[0080] 707: Delivery pipe

[0081] 708: Ozone molecule

[0082] 710: Optical Detection System

[0083] 712: Nozzle

[0084] 714: Nozzle

[0085] 715: Fluid Flow

[0086] 720: Fluid Flow

[0087] 722: Reduced Mask Stage

[0088] 732:Light signal

[0089] 734: Time Coordinate

[0090] 738: Curve

[0091] 772: Ozone bath

[0092] 775: Fluid Flow Controller

[0093] 776: Fluid Collector

[0094] 800: Control System

[0095] 830: Analysis Module

[0096] 840: Main Controller

[0097] 900: Process

[0098] 1000: Computer System

[0099] 1001: Computer

[0100] 1002: Keyboard

[0101] 1003: Mouse

[0102] 1004: Monitor

[0103] 1005: Optical Disc Drive

[0104] 1006: Disk drive

[0105] 1011: Microprocessor Unit

[0106] 1012: Read-only memory

[0107] 1013: Random Access Memory

[0108] 1014: Hard Drive

[0109] 1015: Bus

[0110] 1021: CD

[0111] 1022: Disk

[0112] A:Angle

[0113] B: Angle of incidence

[0114] S1: Horizontal

[0115] S910: Operation

[0116] S920: Operation

[0117] S930: Operation

[0118] S940: Operation

[0119] S950: Operation

[0120] T0: Time

[0121] T1: Time Detailed Implementation

[0122] The following disclosure provides numerous different implementations or embodiments to carry out various features of the provided object. Specific examples of components and arrangements described below are used to simplify this disclosure. These are merely examples and are not intended to be limiting. For instance, in the description, a first feature is formed above or on a second feature, which may include implementations where the first and second features are formed in direct contact, or implementations where additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, this disclosure may repeat reference numerals and / or text in various embodiments. Such repetition is for the purpose of simplicity and clarity and is not, in itself, intended to specify a relationship between the various implementations and / or configurations discussed.

[0123] Additionally, spatial relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” and similar terms may be used here to facilitate the explanation of the relationship between one component or feature as illustrated in the accompanying drawings and another component (or features). Besides the orientations shown in the figures, these spatial relative terms are intended to encompass different orientations of the elements during use or operation. The equipment may be positioned in different ways (rotated 90 degrees or in other orientations), and therefore the spatial relative descriptive symbols used herein can be interpreted in the same manner. Furthermore, the term “made of” can mean “comprising” or “consisting of.” In this disclosure, unless otherwise stated, the term “one of A, B, and C” means “A, B, and / or C” (A, B, C, A and B, A and C, B and C, or A, B, and C), and does not refer to an element from A, an element from B, and an element from C.

[0124] In some embodiments, the resized mask is stored in a resized mask library, which is maintained in a vacuum environment to prevent particulate and hydrocarbon contamination from depositing on the resized mask. However, when using the resized mask during lithography, particulate and hydrocarbon contamination may accumulate on the resized mask. Furthermore, an oxide layer, such as an oxide absorption layer, may be deposited on the upper surface of the resized mask, or the composition of the top layer of the resized mask may be altered. Besides particulate and hydrocarbon contamination, variations in the deposited oxide layer and the composition of the top layer of the resized mask may reduce the reflectivity of the reflective resized mask and may affect, for example, reduce the critical dimension (CD) uniformity of the pattern generated on the photoresist layer of the wafer. In some embodiments, after the resized mask is removed from the resized mask library, particulate and hydrocarbon contamination on the surface of the resized mask is removed with a solvent. In some embodiments, particulate and hydrocarbon contamination on the surface of the resized mask is removed with a solvent before the resized mask is stored in the resized mask library. If the retractable mask is cleaned before storage, solvent cleaning may introduce other particles into the retractable mask library. If the retractable mask is cleaned after being removed from the library, solvent cleaning may introduce other particles into the exposure apparatus of the lithography system. Furthermore, solvent cleaning may cause significant delays in the lithography process. Therefore, in some embodiments, the retractable mask is cleaned offline. The retractable mask is removed from the library, cleaned, and then stored back in the library. Solvent cleaning may not reduce the oxide layer deposited on the top surface of the retractable mask, and may not repair the modified composition of the top layer of the retractable mask.

[0125] As discussed, when a photomask is removed from the photomask library and used in a lithography process, particulate and / or hydrocarbon contaminants can accumulate on the photomask, depositing an oxide layer on its upper surface and modifying the composition of the top layer. Therefore, it is necessary to clean the photomask before performing the lithography process to remove particulate and / or hydrocarbon contaminants. Furthermore, the top layer of the photomask needs to be treated to repair the deposited oxides and modify the composition of the top layer. In some embodiments, in addition to the exposure apparatus, the lithography system includes a processing apparatus. The exposure apparatus is used to project the photomask onto a photoresist layer on a wafer to pattern the wafer. The processing apparatus, having an ozone fluid supply source and a separate radiation source, such as an ultraviolet radiation source, is used to irradiate and process the surface of the photomask when the ozone fluid, such as ozonated water or ozone gas, is released onto the upper surface of the photomask. In some embodiments, radiation energy is used to decompose particulate or hydrocarbon contaminant layers deposited on the surface of the photomask. Furthermore, the radiation energy and ozone fluid on the upper surface of the photomask can be used to repair the oxides and modified components deposited on the top layer of the photomask. Moreover, the more the surface of the photomask is irradiated, the more the particulate and hydrocarbon contaminant layers are decomposed, and the oxides and modified components deposited on the surface of the photomask are affected. In some embodiments, the photomask is a reflective photomask. Prolonged irradiation of the photomask surface not only causes lithography process delays, but additional irradiation may also damage the layers of the photomask. Damage to the layers of the photomask, such as the reflective layer of a reflective photomask, may compromise the uniformity of critical dimensions. Therefore, the purpose is to irradiate the surface of the photomask to reduce or eliminate the effects of particulate and hydrocarbon contamination and repair the oxides and modified components deposited on the top layer of the photomask, without damaging the structure of the photomask, such as the reflective structure. Therefore, it is desirable to irradiate the surface of the reduction mask before damaging its structure in order to achieve the best improvement in critical dimension uniformity (CDU).

[0126] Figure 1 This illustrates a process flow 150 for creating photoresist patterns on a semiconductor substrate. In some embodiments, utilizing... Figure 8 The control system 800 and / or Figure 10A and 10B The computer system 1000 performs the process flow 150. In the photoresist coating operation 102, a photoresist layer of photoresist material is formed, for example, coated on the upper surface of a substrate, such as a wafer or workpiece. Figure 5B As shown, a photoresist layer 15 is disposed on a semiconductor substrate 10. A post-coating bake (PAB) operation 104 is performed to bake the semiconductor substrate 10 containing the photoresist layer 15 to remove the solvent in the photoresist material and cure the photoresist layer 15 on the top of the semiconductor substrate 10.

[0127] In this disclosure, the terms mask, photomask, and zoom mask are used interchangeably. Furthermore, the terms resist and photoresist are used interchangeably. In mask removal operation 105, a zoom mask is removed from the zoom mask library. See reference... Figure 2 The mask removal operation 105 is described in more detail. The removed zoom mask is loaded into the exposure apparatus using the mask loading and exposure operation 108, with reference to... Figure 4 Description. The photomask loading and exposure operation 108 also uses a radiation source of photochemical radiation to project the photomask onto the photoresist layer 15 of the semiconductor substrate 10. In some embodiments, extreme ultraviolet (EUV) radiation with a wavelength of 13.5 nm is used to project the layout pattern on the photomask onto the photoresist layer 15 to create a photoresist pattern in the photoresist layer 15 on the semiconductor substrate 10. The wafer is post-exposure baked in the post-exposure bake (PEB) operation 110, wherein the photoresist layer is further baked after exposure to photochemical radiation and before development in the development operation 112. The photoresist material of the photoresist layer is developed by applying a developer to the photoresist layer 15. For positive photoresist materials, in the development operation 112, the exposed areas are developed by applying a developer, and then the developed areas are removed, leaving the remaining areas to form the photoresist pattern of the photoresist layer 15. For negative photoresist materials, in the development operation 112, the unexposed areas are developed by applying a developer, and then the developed areas are removed, leaving the remaining areas to form the photoresist pattern of the photoresist layer 15. Reference Figure 5A Describe the photomask.

[0128] Figure 2 This illustration depicts a wafer exchange system 200 that transfers resized masks between different locations. The wafer exchange system 200 transfers resized masks between a resized mask library 202, a processing unit 212, and an exposure unit 214. The wafer exchange system 200 includes a robotic device 206 with a robotic arm. The robotic arm includes a first movable segment 204 and a second movable segment 208. The second movable segment 208 rotates about a first pivot point 205. The first movable segment 204 rotates about a second pivot point (not shown) within the robotic device 206, further moving the first pivot point and the second movable segment. The robotic device 206 can rotate the first movable segment 204 and the second movable segment 208 about the respective pivot points to extend the robotic arm to the resized mask library 202, the processing unit 212, or the exposure unit 214. In some embodiments, the robotic device 206, the resized mask library 202, the processing unit 212, and the exposure unit 214 are maintained in a vacuum environment.

[0129] The wafer exchange system 200 also includes a wafer exchange controller 240 coupled to a photomask library 202, a robot device 206, a processing device 212, and an exposure device 214. In some embodiments, the wafer exchange controller 240 commands the robot device 206 to remove a photomask from the photomask library 202 and load it into the processing device 212 or the exposure device 214. In some embodiments, the wafer exchange controller 240 commands the robot device 206 to remove a photomask from the processing device 212 and load it into the exposure device 214. In some embodiments, the wafer exchange controller 240 commands the robot device 206 to remove a photomask from the exposure device 214 and load it into the processing device 212. In some embodiments, the wafer exchange controller 240 commands the photomask library 202 to release one of the photomasks to be removed. In some embodiments, the wafer exchange controller 240 commands the robot device 206 to load the magnifying mask onto the magnifying mask stage (not shown) of the processing device 212 or the exposure device 214. (See also...) Figure 4 , Figure 5B ,and Figure 7A The description processing device 212 and the exposure device 214 are used.

[0130] Figure 3 This illustrates a process flow 300 for forming a photoresist pattern on a semiconductor substrate according to some embodiments disclosed herein. Process flow 300 includes... Figure 1 The process flow 150 includes photoresist coating operation 102, post-coating baking operation 104, post-exposure baking operation 110, and development operation 112. Furthermore, process flow 300 includes a photomask removal operation 105, which utilizes… Figure 2 The wafer exchange system 200 is used. During the photomask removal operation 105, Figure 2 The wafer exchange controller 240 commands the robot device 206 and the photomask library 202. In response to the command from the wafer exchange controller 240, the photomask library 202 releases a photomask, and the robotic arm of the robot device 206 extends into the photomask library 202 and retrieves the released photomask. Process flow 300 also includes a photomask loading and processing operation 106. In the photomask loading and processing operation 106, the wafer exchange controller 240 commands the robot device 206 to load the released photomask into the processing unit 212. Furthermore, after loading the photomask into the processing unit 212, the wafer exchange controller 240 commands a radiation source, such as the light source of the processing unit 212, to irradiate the surface of the photomask for a predetermined period of time to remove particulate matter and / or hydrocarbon contamination from the surface of the photomask and to repair the deposited oxides and modified compositions on the top layer of the photomask, such as… Figure 7B , Figure 7C ,and Figure 7DAs shown. In some embodiments, the radiation source of the processing apparatus 212 is an ultraviolet light source or another light source with a suitable wavelength, which can decompose hydrocarbon contaminant layers and particles or repair deposited oxides and modified components on the top layer of the scalar mask. In some embodiments, the surface of the scalar mask is the surface area of ​​a reflective scalar mask into which radiation enters. In some embodiments, as at least part of the cleaning and processing operation, and to determine the irradiation time of the surface of the scalar mask, the reflected light from the scalar mask is focused onto a photodetector, and the photodetector generates a signal proportional to the detected light. Furthermore, in the mask loading and exposure operation 108, the scalar mask loaded in the processing apparatus 212 is transferred to the exposure apparatus 214, and the radiation source of the exposure apparatus 214 projects the layout pattern of the scalar mask onto the photoresist layer of the substrate, for example... Figure 5B A photoresist layer 15 is formed on the semiconductor substrate 10 to generate a photoresist pattern.

[0131] Figure 4 This is a schematic diagram illustrating an exposure apparatus 400 for generating photoresist patterns on a wafer. The exposure apparatus 400, consistent with exposure apparatus 214, shows the exposure of a photoresist-coated substrate by a patterned radiation beam 29 from a radiation source 100, such as an extreme ultraviolet radiation source. In some embodiments, the exposure apparatus 400 is an integrated circuit lithography machine, such as a stepper, scanner, step-scanning system, direct-write system, or apparatus using contact and / or proximity masks, etc., which provides one or more optical elements 205a and 205b of an optical system to generate a patterned beam, for example, by irradiating a patterned optical element such as a reduction mask, such as a reflective mask 205c, with an extreme ultraviolet radiation beam; and one or more reduction projection optical elements 205d and 205e of the optical system to project the patterned beam onto a target semiconductor substrate 10. In some embodiments, with Figure 5B A photoresist layer 15 is disposed above the semiconductor substrate 10. Mechanical components (not shown) may be provided to generate controllable relative movement between the target semiconductor substrate 10 and patterned optical elements, such as a reflective photomask 205c. Different grains of the substrate are patterned by the controlled relative movement. In some embodiments, the exposure apparatus 400 is an extreme ultraviolet lithography (EUVL) exposure apparatus. As further shown, Figure 4The extreme ultraviolet (EUV) lithography apparatus also includes an EUV radiation source 100 to irradiate the target semiconductor substrate 10. In some embodiments, the EUV lithography patterning system, such as the exposure apparatus 400, is in a vacuum environment to avoid loss of EUV intensity because gas molecules absorb EUV light. In some embodiments, the pressure within the exposure apparatus 400 is sensed by a pressure sensor 408 and controlled by a vacuum pressure controller 406 coupled to the exposure apparatus 400. In some embodiments, the reflective photomask 205c is referenced below. Figure 5A The described reduction matrix 80 is consistent. In some embodiments, the reflective matrix 205c is mounted on the reduction matrix stage 402. In some embodiments, the vacuum pressure controller 406 is included. Figure 2 In the wafer switching controller 240.

[0132] Figure 5A and Figure 5B It is a cross-sectional view illustrating a reflective magnifying mask structure 80 and projecting the reflective magnifying mask structure 80 onto a semiconductor element in an exposure apparatus. Figure 5A A cross-sectional view 500 shows a magnifying mask 80, such as a reflective magnifying mask or a photomask. As mentioned above, the terms mask, photomask, and magnifying mask are used interchangeably. The reflective magnifying mask structure 80 and... Figure 4 It is consistent with the 205c reflective photomask and is used in Figure 4 In the exposure device 400. For example... Figure 5A As shown, the scaled-down photomask 80 includes a substrate 30 of a suitable material, such as a low thermal expansion material or fused silica. In several examples, this material includes silicon dioxide (SiO2) doped with titanium dioxide (TiO2), or other suitable materials with low thermal expansion. The photomask includes multiple reflective layers (ML) 35 deposited on the substrate 30. The multiple reflective layers include multiple thin film pairs, thin films 37 and 39, such as molybdenum-silicon (Mo / Si) thin film pairs (e.g., in each thin film pair, the molybdenum layer is above or below the silicon layer). Alternatively, the multiple reflective layers 35 may include molybdenum-beryllium (Mo / Be) thin film pairs, or other suitable materials that can be configured to highly reflect extreme ultraviolet light. The photomask may also include a capping layer 40, such as ruthenium (Ru), disposed on the multiple reflective layers for protection. The photomask also includes an absorption layer 45 deposited on the multiple reflective layers, such as a boron nitride tantalum (TaBN) layer. The absorption layer 45 is patterned to define a layout pattern 55 for a layer used in an integrated circuit (IC). Alternatively, another reflective layer can be deposited on multiple reflective layers and patterned to define a layer of the integrated circuit, thereby forming an extreme ultraviolet phase-shifting mask.

[0133] Figure 5BThis demonstrates the exposure of a photoresist layer disposed on a semiconductor device to radiation. Figure 5B Is with Figure 4 A consistent simplified diagram used to project a reflected photomask onto a substrate. Figure 5B It also shows that it includes components disposed on the semiconductor substrate 10 and... Figure 4 The semiconductor element 34 is consistent with the semiconductor substrate 10 and the photoresist layer 15. Figure 5B Further evidence shows that it originates from extreme ultraviolet radiation sources, such as Figure 4 The extreme ultraviolet radiation source 100 emits a radiation beam 50. The radiation beam 50 is directed to a photomask 80, such as a reflective photomask, wherein the reflected beam 50' is reflected from the reflective photomask 80 and incident on the photoresist layer 15 of the semiconductor element 34. Angle A is defined as the angle of incidence of the reflected beam 50' relative to a line 302 perpendicular to the upper surface of the semiconductor substrate 10. In some embodiments, the radiation beam 50' is... Figure 4 The semiconductor substrate 10 is mounted on a stage 560, which is coupled to and controlled by a stage controller 565 to move the semiconductor element 34 and expose different positions of the semiconductor element 34. In some embodiments, as described above, Figure 5B The exposure configuration is 550. Figure 4 Part of the exposure device 400.

[0134] Figure 6 It is a detection system 600 that plots a photoresist pattern on a semiconductor substrate 10. Figure 6 The semiconductor element 34 is shown on stage 660, and stage 660 is coupled to and controlled by stage controller 665. See reference... Figure 2 As described, after cleaning the retractable mask at the processing device 212, the retractable mask is mounted as a reflective mask 205c onto the exposure device 400. In some embodiments, Figure 4 The semiconductor substrate 10 is Figure 5B The semiconductor element 34 is irradiated with a radiation beam from a radiation source 100 onto a reflective photomask 205c, thereby projecting the layout pattern of the reflective photomask 205c onto a photoresist layer 15 of the semiconductor element 34, thereby generating a photoresist pattern in the photoresist layer 15. In some embodiments, before exposure, the semiconductor substrate 10 containing the photoresist layer 15 is baked in a post-coating baking operation 104 to remove solvent from the photoresist material and cure the photoresist layer 15. In some embodiments, after exposure, a post-exposure baking operation 110 is performed on the photoresist layer 15. In some embodiments, after the post-exposure baking operation 110, a development operation 112 is applied to the photoresist layer 15 to generate a photoresist pattern in the photoresist layer 15.

[0135] Figure 6It also shows a scanning imaging device 635, which generates a focused beam 619 to scan the upper surface of the photoresist layer 15 and generate an image of the photoresist pattern on the upper surface of the photoresist layer 15. Furthermore, Figure 6 The image shows a scanning imaging device 635 and a lens 634. The lens 634 generates a uniform beam 617 to image the upper surface of the photoresist layer 15, generating an image of a photoresist pattern on the upper surface of the photoresist layer 15. Furthermore, the scanning imaging device 635 is coupled to an analysis module 630, which includes an image processing unit 633 to receive and process the image generated on the upper surface of the photoresist layer 15. In some embodiments, the image generated by the photoresist pattern on the upper surface of the photoresist layer 15 is examined. In some embodiments, the image processing unit of the analysis module 630 performs one or more image processing and / or image recognition algorithms on the image generated on the upper surface of the photoresist layer 15, and determines the critical dimension measurement of the photoresist pattern generated in the photoresist layer. In some embodiments, the focusing beam 619 and the uniform beam 617 are light beams. In some embodiments, the focusing beam 619 is an electron beam. In some embodiments, as described above, the semiconductor element 34 is placed on a stage 660, and a stage controller 665 of the stage 660 moves the semiconductor element 34 relative to the scanning imaging apparatus 635. In some embodiments, the stage controller 665 coordinates the movement of the scanning imaging apparatus 635 and the semiconductor element 34 placed on the stage 660, and enables the scanning imaging apparatus 635 to capture one or more images of the developed photoresist pattern of the photoresist layer 15 disposed on the semiconductor element 34 at different locations on the semiconductor element 34.

[0136] In some embodiments, the analysis module 630 or its image processing unit 633 also determines the critical dimension uniformity (CDU) of the developed photoresist pattern of the photoresist layer 15. If the determined CDU meets a preset standard, for example, if the CDU is better than 1%, the analysis module 630 determines that the predetermined time for cleaning particulate and / or hydrocarbon contamination on the surface of the photomask and / or repairing the deposited oxide and modified composition of the top layer of the photomask is sufficient, for example, acceptable. However, if the CDU does not meet the preset standard, the analysis module 630 determines that the predetermined time for cleaning particulate and / or hydrocarbon contamination on the surface of the photomask or repairing the deposited oxide and modified composition of the top layer of the photomask is insufficient, for example, unacceptable, and should be increased. In some embodiments, the analysis module 630 gradually increases the predetermined time, for example, by an amount between about 2% and about 10%. After each step of increasing the predetermined time, the critical dimension uniformity is measured. If the critical dimension uniformity meets the preset standard, the increase is stopped, and the predetermined time is determined to be the amount of time required for the critical dimension uniformity to meet the preset standard. In some embodiments, the predetermined time depends on the details of the photomask layout pattern and whether there are specific shapes or features, such as holes, present in the photomask layout pattern.

[0137] In some embodiments, the analysis module 630 determines that a predetermined time for removing particulate and / or hydrocarbon contaminants from the surface of the magnification mask, or for repairing the deposited oxide and modified composition of the top layer of the magnification mask, is acceptable; however, the predetermined time may exceed the time required to meet a preset standard. In some embodiments, the analysis module 630 gradually reduces the predetermined time, for example, by a reduction of approximately 2% to approximately 10%. After each step of reducing the predetermined time, critical dimension uniformity is measured. If the critical dimension uniformity does not meet the preset standard, the reduction is stopped, and the predetermined time is determined to be the closest time before the reduction that caused the critical dimension uniformity to fail to meet the preset standard. In some embodiments, the determined predetermined time is increased by a predetermined percentage, for example, between approximately 0.5% and approximately 1.5%, to increase reliability.

[0138] Figure 7A , Figure 7B , Figure 7C , Figure 7D ,and Figure 7E This is a processing apparatus illustrating, according to some embodiments of the present disclosure, for processing a magnifying mask, detecting reflected light from a reflective magnifying mask during processing, and showing the composition of the top layer of the magnifying mask before and after processing. Figure 7AThe processing apparatus displays an ultraviolet radiation beam 51 from an ultraviolet light source-controller 705, an incident beam, irradiating the magnifying glass 80. In some embodiments, the ultraviolet light source-controller 705 generates the ultraviolet radiation beam 51, such as an ultraviolet beam, at an incident angle B relative to a line 302 perpendicular to the surface 706 of the magnifying glass 80. In some embodiments, the magnifying glass 80 is a reflective magnifying glass, and the reflected ultraviolet radiation beam 51' is reflected back from the surface 706 of the magnifying glass 80. Figure 7A As shown, a fluid flow controller 775 generates a fluid flow 715 from an ozone tank 772. The fluid flow 715 is delivered to the surface 706 of the photomask 80 via a delivery pipe 702 and a nozzle 712. In some embodiments, the ozone tank 772 contains ozone, the fluid flow 715 is an ozone fluid flow, and it delivers, for example, releases, ozone molecules 708 onto the surface 706 of the photomask 80. In some embodiments, when the surface 706 of the photomask 80 is irradiated with an ultraviolet radiation beam 51, the ozone molecules 708 are dispersed on the surface 706 of the photomask 80. In some embodiments, the ozone molecules 708 dispersed on the surface 706 of the photomask 80 enhance the removal of particulate and / or hydrocarbon contaminants from the surface 706 of the photomask 80, and also improve the curing of the deposited oxides and modified components on the top layer of the photomask 80. In some embodiments, the ultraviolet light source-controller 705 has a wavelength between about 100 nm and about 400 nm. As described, in some embodiments, the photomask 80 is a reflective extreme ultraviolet photomask, and about 50% to 90% of the incident ultraviolet radiation beam 51 is reflected back from the surface 706 of the photomask 80, producing a reflected ultraviolet radiation beam 51', while the remaining incident ultraviolet radiation beam 51 passes through the photomask 80. In some embodiments, the incident ultraviolet radiation beam 51 irradiates a first region of a plurality of at least partially non-overlapping areas on the surface 706 of the photomask 80 and processes, for example, repairing or curing the first region of the surface 706 of the photomask 80. In some embodiments, with Figure 4 The photomask stage 402 moves in tandem with the photomask stage 722, and the incident ultraviolet radiation beam 51 scans and processes the entire surface 706 of the photomask 80. In some embodiments, the ultraviolet light source controller 705 changes the incident angle B of the incident ultraviolet radiation beam 51 to scan and process the entire surface 706 of the photomask 80. In some embodiments, the fluid collector 776 collects the remaining amount of the delivered ozone fluid stream 715 as a fluid stream 720. The fluid stream 720 is collected through a nozzle 714 and a delivery tube 707 connecting the nozzle 714 and the fluid collector 776. In some embodiments, such as Figure 7AAs shown, the surface 706 of the zoom lens 80 is covered with ozone fluid. In some embodiments, fluid flows 715 and 720 are ozone water, such as ozone gas dissolved in water, which covers the surface 706 of the zoom lens 80 when the incident ultraviolet radiation beam 51 irradiates it. Therefore, in some embodiments, the ozone tank 772 is an ozone water tank, and the fluid flow controller 775 controls the flow rate of ozone water from the ozone tank 772 to the surface 706 of the zoom lens 80, and the ozone molecules 708 on the surface 706 of the zoom lens 80 are dissolved in the water (not shown). In some embodiments, the ozone tank 772 is an ozone gas tank, fluid flows 715 and 720 are ozone gas, and ozone molecules 708 are provided to the surface 706 of the zoom lens 80 in the form of ozone gas.

[0139] Figure 7B Showing Figure 7A The processing device is consistent with the processing device. Figure 7B Additionally, a light detection system 710 is included, comprising at least one photodetector and a focusing optical element, such as a lens, and coupled to the analysis module 630. In some embodiments, the light detection system 710 focuses the reflected ultraviolet radiation beam 51' onto a single point, detects and generates a light signal 732 proportional to the detected light, and transmits the detected light signal 732 to the analysis module 630. In some embodiments, the treatment of the ozone-covered surface 706 of the magnification mask 80 repairs the deposited oxides and modified composition on the top layer of the magnification mask 80 not covered by the absorption layer 45, and increases the intensity of the reflected ultraviolet radiation beam 51', thus increasing the detected light signal 732. The time variation of the detected light signal 732 is referenced... Figure 7E describe.

[0140] Figure 7C and Figure 7D Showing with Figure 7B The processing device is consistent with the processing device. Figure 7C and Figure 7D Additionally, a contamination layer 704 containing hydrocarbon contaminants or particles is shown deposited on the surface 706 of the magnification mask 80, where the incident radiation beam 51 enters the magnification mask 80. Besides the oxides and modified composition deposited on the top layer of the magnification mask 80, the contamination layer 704 may further reduce… Figure 5B The intensity of the reflected beam 50' may be reduced, and the projected image may be further attenuated during lithography, potentially reducing critical dimension uniformity. In some embodiments, the ozone-covered contaminant layer 704 is irradiated with an ultraviolet radiation beam 51 to decompose the contaminant layer 704. For example... Figures 7C to 7DAs the progress is shown, the contaminant layer 704 is decomposed and thinned, and the intensity of reflected light from the surface 706 of the scalar magnification mask 80 increases. In addition to decomposing the contaminant layer 704, the ultraviolet radiation beam 51 can also solidify the deposited oxides and modified components on the top layer of the scalar magnification mask 80 during and after the decomposition of the contaminant layer 704, thus further increasing the reflected light from the surface 706 of the scalar magnification mask 80.

[0141] In some embodiments, the ozone-covered photomask 80 is irradiated with an ultraviolet radiation beam 51, and the critical dimension uniformity can be determined in multiple steps, each lasting approximately 10 to 50 seconds. After each step, the critical dimension uniformity is determined as described above. If the determined critical dimension uniformity is below the critical critical dimension uniformity, the processing of the photomask 80 is complete. In some embodiments, for a 3nm semiconductor node, the critical critical dimension uniformity is approximately 1% to 2% in the 3nm process.

[0142] Figure 7E The time variation of the reflected light signal 732 from a region on the surface 706 of the zoom mask 80 is displayed on the time coordinate 734. For example... Figure 7E As shown, the reflection intensity from a specific area increases over time until the intensity curve saturates at level S1 and no longer increases further at time T1. Curve 738 represents a specific area on the surface 706 of the magnifying mask 80 where a contaminant layer 704 is present and / or where the deposited oxides and modifiers on the top layer of the magnifying mask 80 are present. The time variation of curve 738 also indicates that the contaminant layer 704 is decomposed and / or the deposited oxides and modifiers on the top layer of the magnifying mask 80 are solidified. As discussed, Figure 7A , Figure 7B , Figure 7C ,and Figure 7D The process is enhanced, for example, by increasing the reflectivity of surface 706 of the reduction mask 80, thus increasing the reflected light from surface 706 of the reduction mask 80, thereby reducing the time required for lithography operations. In some embodiments, the exposure time for lithography operations is inversely proportional to the reflectivity of the reduction mask 80.

[0143] In some embodiments, time T1 is a predetermined time required to clean and cure the surface 706 of the reduction photomask 80, and further irradiation of the reduction photomask 80 does not improve the intensity of reflected light. In some embodiments, cleaning stops and time T1 is reached when curve 738 saturates within a predetermined time and increases less than a critical value, for example, when curve 738 increases by less than 1% within a predetermined time between about 10 seconds and about 100 seconds. In some embodiments, time T1 is between about 50 seconds and about 100 seconds. In some embodiments, time T1 is between about 2 minutes and about 10 minutes. In some embodiments, curve 738 is constructed for multiple regions on the surface 706 of the reduction photomask 80, time T1 is measured for multiple regions, and the final time T1 is determined as the maximum value of the multiple measured times T1. In some embodiments, the shortest time for each cleaning and / or processing step is time T0, for example, 10 seconds, so curve 738 begins at time T0. In some embodiments, as described above, an ultraviolet light source is used to determine the reflectivity of the surface 706 of the photomask 80, and the determined cleaning and / or processing time is used to clean and / or process the photomask 80 with an ultraviolet light source. However, lithography systems using extreme ultraviolet light sources use a cleaned and processed photomask 80.

[0144] In some embodiments, after approximately 20 lithography operations, the intensity of reflected light from the surface 706 of the reduction mask 80 decreases from approximately 20 millijoules to [a lower value]. Figure 7B The light detection system 710 measured approximately 17.4 millijoules; however, after processing, the reflected light intensity increased to approximately 18.6 millijoules. Therefore, in some embodiments, this processing does not completely solidify the deposited oxide and modified composition on the top layer of the scale-down mask 80, but it completely removes the contaminant layer 704.

[0145] Figure 8 This illustration depicts a control system 800 according to some embodiments of the present disclosure for processing a magnifying mask and projecting the layout pattern of the processed magnifying mask onto a semiconductor substrate. The control system 800 includes an analysis module 830 and a main controller 840 coupled to each other. In some embodiments, the control system 800 includes... Figure 6 Platform controller 665 Figure 7B 710 optical detection system Figure 2 Wafer switching controller 240 Figure 6 The scanning imaging device 635, and Figure 4The vacuum pressure controller 406. In some embodiments, the main controller 840 couples with and controls the stage controller 665, the photodetector system 710, the wafer exchange controller 240, the scanning imaging device 635, and the vacuum pressure controller 406. In some embodiments, the main controller 840 is directly coupled to the scanning imaging device 635 or coupled to the scanning imaging device 635 through the analysis module 830. In some embodiments, the processing of the magnification mask 80 includes cleaning the surface 706 of the magnification mask 80.

[0146] In some implementations, the analysis module 830 and Figure 6 The analysis module 630 is consistent with or includes the analysis module 630. In some embodiments, the main controller 840 commands the scanning imaging device 635 to capture an image of a photoresist pattern on a semiconductor substrate via the analysis module 830, and determines, for example, the critical dimension uniformity of the photoresist pattern on the semiconductor substrate. As described above, the analysis module 830 determines whether the surface of the reduction mask has been cleaned and / or processed based on the measured critical dimension uniformity. In some embodiments, the main controller 840 commands the stage controller 665 to move the stage 660 to capture one or more images of photoresist patterns at different locations on the semiconductor substrate. In some embodiments, the main controller 840 commands the vacuum pressure controller 406 to maintain the vacuum environment inside the processing device 212 and the exposure device 214, and to maintain the vacuum environment inside the reduction mask library 202. In some embodiments, the main controller 840 commands the wafer exchange controller 240 to clean and / or process the surface of the photomask in the processing apparatus 212, load the cleaned and processed photomask into the exposure apparatus 214, and project the layout pattern of the photomask 80 onto the photoresist layer of the semiconductor substrate 10. In some embodiments, the main controller 840 commands the photodetector system 710 to capture reflected light from the photomask during the cleaning and / or processing of the photomask 80, and transmit the detected reflected light to the analysis module 830 for analysis. As previously described, the analysis module 830 includes an image processing unit 633 or is coupled to an image processing unit 633.

[0147] Figure 9 This illustration depicts a process 900, according to some embodiments of the present disclosure, for processing a magnifying mask and projecting a layout pattern of the processed magnifying mask onto a semiconductor substrate. Process 900 or a portion thereof may be utilized. Figure 2 The system is operated as follows. In some embodiments, process 900 or a portion thereof is performed by reference to the following... Figure 10A and Figure 10B The described computer system 1000 performs and / or controls. In some embodiments, process 900 or a portion of process 900 is performed by the above-described... Figure 8The control system 800 performs this operation. This method includes operation S910, in which a reduction mask is retrieved from the reduction mask library and transferred to the processing device. For example... Figure 2 As shown, the robotic arm of the robot device 206 retrieves a reduction photomask from the reduction photomask library 202. After retrieving the reduction photomask, the robotic arm transfers it to the processing device 212.

[0148] In operation S920, the surface of the photomask is treated by releasing ozone fluid above its surface and irradiating the surface of the photomask with ultraviolet radiation from an ultraviolet source for a predetermined time. Figure 7A , Figure 7B ,and Figure 7C As shown, the surface 706 of the reduction mask 80 is processed in the processing apparatus 212 to remove the contamination layer 704 and / or cure the deposited oxides and modified components on the top layer of the reduction mask 80. Figure 7B and Figure 7D As shown, the contaminant layer 704 and / or the deposited oxides and modified components on the top layer of the photomask 80 are removed from the surface of the photomask 80. In some embodiments, this process includes focusing an ultraviolet beam reflected from the surface of the photomask onto a detector of a photodetector system 710 to generate a detection signal, which is then transmitted to an analysis module 830 via a main controller 840, whereby the analysis module 830 monitors the detection signal during irradiation. In some embodiments, the analysis module 830 sends a signal to the main controller to stop the irradiation time and stops the processing of the photomask surface when the percentage of the detected signal increases below a critical value within a specific time period.

[0149] In operation S930, a beam of reflected ultraviolet light from the surface of the magnifying mask is focused onto the detector to generate a detection signal. The detected signal is monitored, and processing stops when the percentage of the detected signal increases below a threshold within a specific time period. Figure 7B As shown, the reflected beam 51' is focused onto the detector of the light detection system 710, generating a light signal 732. The detected light signal 732 is transmitted to the analysis module 630 for monitoring. When the analysis module 630 determines that the percentage increase of the detected light signal 732 is below a critical value, for example, below 1%, within a duration of approximately 20 seconds, the processing ends and the ultraviolet radiation beam 51 is turned off, the ozone fluid flow 715 is shut off, and the remaining amount of the delivered ozone fluid flow 715 is collected as fluid flow 720 using the fluid collector 776.

[0150] In operation S940, after processing, the reduction mask is transferred from the processing unit to the exposure unit for lithography. For example... Figure 2As shown, after processing the resized photomask, it is transferred from the processing unit 212 to the exposure unit 214. The resized photomask is transported using the robotic arm of the robotic unit 206. In the exposure unit 214, lithography is performed, and the layout pattern of the resized photomask 80 is projected onto the wafer.

[0151] In operation of S950, the layout pattern of the magnified photomask is projected onto the photoresist layer of the wafer within the exposure apparatus. For example... Figure 4 and Figure 5B As shown, the layout pattern of each reflective photomask 205c or 80 is projected onto the photoresist layer of each semiconductor substrate 10.

[0152] Figure 10A and Figure 10B This is an apparatus for processing a magnifying mask and projecting the layout pattern of the processed magnifying mask onto a semiconductor substrate, according to some embodiments disclosed herein. Figure 10A and Figure 10B This illustrates an apparatus according to some embodiments of the present disclosure for processing a reduction photomask and projecting a layout pattern of the cleaned reduction photomask onto a semiconductor substrate. In some embodiments, the computer system 1000 is used to perform... Figure 8 The modules include a main controller 840, an analysis module 830 or 630, a stage controller 665, a wafer exchange controller 240, a vacuum pressure controller 406, and an image processing unit 633 of the analysis module 630. In some embodiments, the computer system 1000 is used to execute... Figure 9 The process is 900.

[0153] Figure 10A This is a schematic diagram of a computer system that performs the functions of a device for processing a magnifying mask and projecting a layout pattern of the processed magnifying mask. All or part of the processes, methods, and / or operations of the above embodiments can be implemented using computer hardware and computer programs executed thereon. Figure 10A In the computer system 1000, there is a computer 1001, which includes a read-only optical disc drive 1005 and a disk drive 1006, a keyboard 1002, a mouse 1003, and a monitor 1004.

[0154] Figure 10B This is a schematic diagram illustrating the internal configuration of computer system 1000. Figure 10BIn addition to an optical disc drive 1005 and a hard disk drive 1006, computer 1001 is equipped with one or more processors, such as a microprocessor unit (MPU) 1011; read-only memory (ROM) 1012, which stores programs such as boot programs; random access memory (RAM) 1013, which is connected to the microprocessor unit 1011 and temporarily stores application program instructions and provides a temporary storage area; a hard disk 1014, which stores application programs, system programs, and data; and a bus 1015 connecting the microprocessor unit 1011, the read-only memory 1012, etc. It should be noted that computer 1001 may include a network card (not shown) providing connection to a local area network (LAN).

[0155] The program that enables computer system 1000 to perform the functions described above in processing the layout pattern of the magnified photomask and the projection-processed magnified photomask can be stored on optical disc 1021 or disk 1022. Optical disc 1021 or disk 1022 is inserted into optical disc drive 1005 or disk drive 1006 and transferred to hard disk 1014. Alternatively, the program can be transferred to computer 1001 via a network (not shown) and stored in hard disk 1014. During execution, the program is loaded into random access memory 1013. The program can be downloaded from optical disc 1021 or disk 1022, or directly from the network. The program does not need to include, for example, an operating system (OS) or third-party programs to enable computer 1001 to perform the functions of the control system described above in processing the layout pattern of the magnified photomask and the projection-processed magnified photomask. The program may contain only an instruction section to call the appropriate function (module) in control mode and obtain the desired result.

[0156] According to some embodiments disclosed herein, a method for processing the surface of a reduction photomask for semiconductor manufacturing includes removing a reduction photomask from a reduction photomask library, transferring the reduction photomask to a processing apparatus, and releasing ozone fluid onto a surface of the reduction photomask. This method also includes irradiating the surface of the reduction photomask with incident ultraviolet (UV) radiation for a predetermined irradiation time while the ozone fluid is on the surface of the reduction photomask, thereby processing the surface of the reduction photomask. This method includes, after processing, transferring the reduction photomask to an exposure apparatus for photolithography to generate a photoresist pattern on a wafer. This method further includes imaging a surface of the wafer to generate an image of the photoresist pattern on the wafer, analyzing the image of the photoresist pattern to determine the critical dimension uniformity of the photoresist pattern, and increasing the predetermined irradiation time if the determined critical dimension uniformity does not meet a critical critical dimension uniformity. In one embodiment, the ozone fluid is ozone water or ozone gas, and this method further includes maintaining the processing apparatus, the exposure apparatus, and the reduction photomask library in a vacuum environment. In one embodiment, a robotic arm of a wafer exchange system removes a scaled-down mask from a scaled-down mask library and transfers it to a processing apparatus, and the method further includes using the robotic arm to transfer the scaled-down mask from the processing apparatus to an exposure apparatus. In another embodiment, the method further includes projecting an incident extreme ultraviolet (EUV) radiation onto a photoresist layer on a wafer using incident extreme ultraviolet (EUV) radiation; and developing the photoresist layer to create a photoresist pattern on the wafer. In one embodiment, the incident UV radiation is generated by an UV source in the processing apparatus, and the incident EUV radiation is generated by an EUV source in the exposure apparatus. In one embodiment, for a 3nm semiconductor node, the critical dimension is between 1% and 2% in the 3nm process. In one embodiment, the method further includes repeating the above-described processing, projection, development, imaging, analysis, and increasing an irradiation time until the determined critical dimension uniformity meets the critical critical dimension uniformity; and adjusting the predetermined irradiation time to correspond to the irradiation time of the critical critical dimension uniformity.

[0157] According to some embodiments of this disclosure, a method for processing the surface of a photomask used in semiconductor manufacturing includes processing the surface of a reflective photomask in a processing apparatus. This processing includes releasing an ozone fluid onto the surface of the photomask, and while the ozone fluid is on the surface of the photomask, irradiating the surface of the photomask with an incident ultraviolet radiation beam from an ultraviolet source for a duration to process the surface of the photomask. This processing further includes focusing the reflected ultraviolet beam from the surface of the photomask onto a detector to generate a detection signal; monitoring the detection signal during the irradiation time; and stopping the processing of the surface of the photomask and ending the irradiation time when the percentage of the detection signal increases below a critical value within a specific time period. This method also includes transferring the photomask from the processing apparatus to an exposure apparatus for lithography after processing. This method further includes projecting the layout pattern of the photomask in the exposure apparatus onto a photoresist layer on a wafer using incident extreme ultraviolet (EUV) radiation from an extreme ultraviolet (EUV) source. In some embodiments, the method further includes developing a photoresist layer after projection to create a photoresist pattern on the wafer. In some embodiments, the aforementioned processing further includes irradiating a first region of two or more at least partially non-overlapping regions on the surface of the photomask with an incident ultraviolet radiation beam to process the first region on the surface of the photomask; focusing the reflected ultraviolet beam from the first region on the surface of the photomask onto a detector to generate a detection signal; monitoring the detection signal during the irradiation time; and stopping the processing of the first region when the percentage increase of the detection signal falls below a critical value within a specific time. In some embodiments, the aforementioned two or more at least partially non-overlapping regions cover the entire surface of the photomask, and the aforementioned processing further includes performing the aforementioned irradiation, focusing, monitoring, and stopping on other regions of the aforementioned two or more at least partially non-overlapping regions on the surface of the photomask to process the entire surface of the photomask. In some embodiments, the ultraviolet source of the processing apparatus generates an ultraviolet beam having a wavelength between 100 nm and 300 nm, and the method further includes stopping the processing of the first region when the detection signal increases by less than 1% within 20 seconds. In some embodiments, the extreme ultraviolet (EUV) source of the exposure apparatus generates EUV radiation with a wavelength of 13.5 nm, and the UV source generates an UV beam with a wavelength between 120 nm and 250 nm. In some embodiments, this method further includes maintaining the exposure apparatus and processing apparatus in a vacuum environment.

[0158] According to some embodiments disclosed herein, a semiconductor manufacturing system includes a main controller, an analysis module coupled to the main controller, and a wafer exchange system having an extendable robotic arm. The system includes a processing unit comprising a first photomask stage configured to mount a photomask, an ultraviolet (UV) light source, and a photodetector comprising a photodetector. The system also includes an exposure unit comprising a second photomask stage for mounting a photomask, an extreme ultraviolet (EUV) light source, a stage for supporting a wafer, and an optical system. The main controller commands the UV light source to turn on, emitting ultraviolet radiation from the UV light source, and processes the surface of the photomask in the first photomask stage of the processing unit by irradiating a surface of the photomask with the ultraviolet radiation from the UV light source. The main controller allows the release of ozone fluid from an ozone supply line above the surface of the photomask during irradiation with ultraviolet radiation. The main controller commands the photodetector of the processing unit to focus the reflected ultraviolet radiation from the surface of the photomask onto the photodetector of the photodetector to generate a detection signal and send the detection signal to the analysis module. The analysis module monitors the detection signal during the irradiation time and sends a command to the ultraviolet light source via the main controller to stop processing the surface of the photomask when the percentage of the detection signal increases below a critical value within a specific time period. After processing, the main controller commands the wafer exchange system to use an extendable robotic arm to transfer the photomask from the processing device to the second photomask stage of the exposure device for lithography. Furthermore, after the transfer, the main controller commands the extreme ultraviolet light source to turn on, emitting extreme ultraviolet radiation, and projecting the layout pattern of the photomask onto the photoresist layer of the wafer through an optical system. In one embodiment, the system further includes a development system to develop the photoresist layer of the wafer after the layout pattern of the photomask is projected, and to generate a photoresist pattern on the wafer. In one embodiment, the exposure device further includes an imaging device mounted above the second photomask stage. In response to a command from the main controller, the imaging device captures an image of the developed photoresist pattern on the wafer and transmits the captured image to the analysis module. The analysis module determines the critical dimension uniformity of the photoresist pattern on the wafer. In one embodiment, the system further includes a photomask library for storing multiple photomasks, and a pressure controller coupled to a main controller. The pressure controller maintains the pressure of the exposure apparatus, processing apparatus, and photomask library under vacuum conditions. In one embodiment, the system further includes a photomask library. Before irradiating the surface of the photomask with ultraviolet radiation, the main controller sends a command to the wafer exchange system to remove the photomask from the photomask library and transfer it to the processing apparatus. In one embodiment, the extreme ultraviolet light source has a wavelength of 13.5 nm, and the ultraviolet light source emits wavelengths between 120 nm and 250 nm.The analysis module sends a command to the ultraviolet light source via the main controller to shut it down when the detection signal increases by less than 1% within 20 seconds, thereby stopping the processing of the surface of the reduction mask. In some embodiments, the ultraviolet light source emits a beam of light with a wavelength in the extreme ultraviolet range of 10 nm to 100 nm.

[0159] As described in the above embodiments, the surface of the photomask is treated by decomposing the microparticles and hydrocarbon layers deposited on the surface of the photomask, and by curing the deposited oxides and modified components on the top layer of the photomask using ultraviolet radiation and ozone fluid. This treatment is carried out without solvents and using ultraviolet radiation and ozone fluid. As discussed, this treatment reduces the exposure time of lithography operations and lowers lithography costs.

[0160] The foregoing has outlined the features of several embodiments or examples, thus enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis to design or refine other processes and structures to achieve the same objectives and / or advantages as the embodiments or examples described herein. Those skilled in the art should also understand that such equivalent architectures do not depart from the spirit and scope of this disclosure, and that various modifications, substitutions, and alterations can be made without departing from the spirit and scope of this disclosure.

Claims

1. A method for treating the surface of a magnifying mask, characterized in that, The method includes: Take a 1x shrink mask from the 1x shrink mask library; The reduced-size mask is transferred to a processing device; An ozone fluid is released onto one surface of the magnifying glass. When the ozone fluid is on the surface of the photomask, the surface of the photomask is treated by irradiating the surface of the photomask with incident ultraviolet radiation for a predetermined irradiation time. After this process, the reduced photomask is transferred to an exposure apparatus for photolithography to create a photoresist pattern on a wafer. An image is formed on one surface of the wafer to produce an image of the photoresist pattern on the wafer; An analysis is performed on the image generated by the photoresist pattern to determine the uniformity of a key dimension of the photoresist pattern. as well as If the determined critical dimension uniformity does not meet a critical critical dimension uniformity, the predetermined irradiation time is increased.

2. The method as described in claim 1, characterized in that: The ozone fluid is either ozone water or ozone gas; and The method also includes: The processing apparatus, the exposure apparatus, and the reduction mask library are maintained in a vacuum environment.

3. The method as described in claim 1, characterized in that, The reduction mask is removed from the reduction mask library and transferred to the processing device using a robotic arm of a wafer exchange system; and The method also includes using the robotic arm to transfer the magnification mask from the processing device to the exposure device.

4. The method as described in claim 1, characterized in that, The method also includes: A projection is performed using incident extreme ultraviolet (EUV) radiation to project a layout pattern of the magnified photomask onto a photoresist layer of the wafer; and The photoresist layer is developed to generate the photoresist pattern on the wafer.

5. The method as described in claim 4, characterized in that, The incident ultraviolet radiation is generated by an ultraviolet source of the processing device, and the incident extreme ultraviolet radiation is generated by an extreme ultraviolet source of the exposure device.

6. The method as described in claim 4, characterized in that, For the 3nm semiconductor node, this critical dimension is between 1% and 2% in the 3nm process.

7. The method as described in claim 6, characterized in that, The method also includes: Repeat the process, including the projection, development, imaging, analysis, and increasing the irradiation time, until the determined critical dimension uniformity meets the critical critical dimension uniformity; and The predetermined irradiation time is adjusted to correspond to the irradiation time of the critical critical size uniformity.

8. A method for treating the surface of a magnifying mask, characterized in that, The method includes: A surface of a reflective, one-fold reduction mask is processed in a processing apparatus, wherein the processing includes: Release an ozone fluid onto the surface of the magnifying glass; and When the ozone fluid is located on the surface of the photomask, the surface of the photomask is irradiated for a duration using an incident ultraviolet radiation beam from an ultraviolet source, wherein the treatment further includes: A reflected ultraviolet beam from the surface of the magnifying mask is focused onto a detector to generate a detection signal; The detection signal is monitored during the irradiation time; as well as When a percentage of the detection signal increases below a critical value within a specific time period, the processing of the surface of the magnifying mask is stopped, and the irradiation time ends. After this processing, the reduced-size mask is transferred from the processing apparatus to an exposure apparatus for photolithography; and Using incident extreme ultraviolet radiation from an extreme ultraviolet (EUV) source, a layout pattern of the magnifying mask in the exposure apparatus is projected onto a photoresist layer on a wafer.

9. The method as described in claim 8, characterized in that, The method also includes: After projection, the photoresist layer is developed to create a photoresist pattern on the wafer.

10. The method as described in claim 8, characterized in that, The process also includes: The first region on the surface of the photomask is processed by irradiating a first region of two or more at least partially non-overlapping regions on the surface of the photomask with the incident ultraviolet radiation beam. A reflected ultraviolet beam from the first region of the surface of the magnifying mask is focused onto the detector to generate the detection signal; The detection signal is monitored during the irradiation time; as well as Processing of the first region ceases when the percentage of the detected signal increases below the threshold within a specific time period.

11. The method as described in claim 10, characterized in that, The two or more at least partially non-overlapping regions cover an entire surface of the reduction photomask, and the process further includes: The irradiation, focusing, monitoring, and stopping are performed on other areas of the two or more at least partially non-overlapping regions of the surface of the magnifying mask to process the entire surface of the magnifying mask.

12. The method as described in claim 10, characterized in that, The ultraviolet source of the processing device generates an ultraviolet beam having a wavelength between 100 nm and 300 nm, wherein the method further comprises: When the detection signal increases by less than 1% within 20 seconds, processing of the first region is stopped.

13. The method as described in claim 8, characterized in that, The extreme ultraviolet source of the exposure device generates extreme ultraviolet radiation with a wavelength of 13.5 nm, and the ultraviolet source generates an ultraviolet beam with a wavelength between 120 nm and 250 nm.

14. The method as described in claim 8, characterized in that, The method also includes: The exposure device and the processing device are kept in a vacuum environment.

15. A semiconductor manufacturing system, characterized in that, The semiconductor manufacturing system includes: One main controller; An analysis module is coupled to the main controller; A wafer switching system with an extendable robotic arm; A processing device, comprising: A stage for mounting a first-magnification mask; An ultraviolet (UV) light source; and A single-light detection system includes a single-light detector; An exposure apparatus, comprising: A second-magnification mask stage, configured to mount the second-magnification mask; An extreme ultraviolet (EUV) light source; A stage for supporting a wafer; and An optical system, wherein: The main controller is configured to command the ultraviolet light source to turn on, emit ultraviolet radiation from the ultraviolet light source, and process the surface of the photomask in the first photomask stage of the processing apparatus by irradiating a surface of the photomask with the ultraviolet radiation from the ultraviolet light source. The main controller is configured to allow the release of ozone fluid from an ozone supply line above the surface of the photomask during the use of ultraviolet radiation. The main controller is configured to command the photodetector system of the processing device to focus reflected ultraviolet radiation from the surface of the magnifying mask onto the photodetector of the photodetector system to generate a detection signal and send the detection signal to the analysis module. The analysis module is configured to monitor the detection signal during an irradiation period and, via the main controller, send a command to the ultraviolet light source to stop processing the surface of the magnifying mask when a percentage increase in the detection signal falls below a critical value within a specific time period. Following this processing, the main controller is configured to command the wafer exchange system to use the extendable robotic arm to transfer the magnifying mask from the processing unit to the second magnifying mask stage of the exposure unit for lithography operations. After the transfer, the main controller is configured to command the extreme ultraviolet light source to turn on, emit extreme ultraviolet radiation from the extreme ultraviolet light source, and project a layout pattern of the magnified photomask onto a photoresist layer of the wafer through the optical system.

16. The semiconductor manufacturing system as claimed in claim 15, characterized in that, The semiconductor manufacturing system also includes: A developing system configured to develop the photoresist layer on the wafer after the layout pattern of the magnifying mask is projected, and to generate a photoresist pattern on the wafer.

17. The semiconductor manufacturing system as claimed in claim 16, characterized in that, The exposure apparatus also includes: An imaging device, mounted above the second-magnification photoresist stage, is configured to capture an image of the developed photoresist pattern on the wafer in response to a command from the main controller, and transmit the captured image to the analysis module. The analysis module is configured to determine the uniformity of a key dimension of the photoresist pattern on the wafer.

18. The semiconductor manufacturing system as claimed in claim 15, characterized in that, The semiconductor manufacturing system also includes: A 1x scaled-down mask library to store multiple scaled-down masks; and A pressure controller is coupled to the main controller, wherein the pressure controller maintains the pressure of the exposure device, the processing device, and the reduction mask library in a vacuum environment.

19. The semiconductor manufacturing system as claimed in claim 15, characterized in that, The semiconductor manufacturing system also includes: A 1x photomask library, wherein before the surface of the 1x photomask is irradiated with the ultraviolet radiation, the main controller sends a command to the wafer exchange system to remove the 1x photomask from the 1x photomask library and transfer the 1x photomask to the processing device.

20. The semiconductor manufacturing system as claimed in claim 15, characterized in that, The extreme ultraviolet light source has a wavelength of 13.5 nm and emits wavelengths between 120 nm and 250 nm. The analysis module sends a command to the ultraviolet light source via the main controller to shut it off when the detection signal increases by less than 1% within 20 seconds, thereby stopping the processing of the surface of the magnification mask.

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