Remote plasma source separation valve and source or gas supply method using the same

By designing remote plasma source separation valves, the selective opening or blocking port is used using the connection adjustment department to solve the problem of overlapping medium ion source and process gas supply range of semiconductor equipment, and realizing the decrease in particlement, reduced maintenance costs, and improved production efficiency. Effect.

CN115223839BActive Publication Date: 2025-01-28SYT CO LTD
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Patent Information

Application Number
CN202210398641.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-04-16
Filing Date
2022-04-15
Publication Date
2025-01-28
Estimated Expiration
2042-04-15

AI Technical Summary

Technical Problem

The lack of separate remote plasma source separation valves in existing semiconductor equipment and display equipment leads to overlapping supply intervals of process gas and plasma sources, resulting in fatal particles, increasing maintenance costs and reducing production efficiency.

Method used

Design a remote plasma source separation valve. Through the connection adjustment, you can selectively open or block the source port and process gas port of the plasma body to prevent the plasma sources from mixing with each other.

Benefits of technology

By preventing the mixing of plasma sources and process gases, it significantly reduces the production of particles, reduces maintenance costs, and improves production efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

A remote plasma source separation valve according to an embodiment of the present invention may include: a valve housing, on which a processing chamber port, a plasma source port and a process gas port are installed, wherein the processing chamber port is connected to the processing chamber, the plasma source port is used to supply a plasma source, and the process gas port is used to supply a process gas; and a connection adjustment portion, which is installed in the valve housing and adjusts the connection between the plasma source port and the processing chamber port or the connection between the process gas port and the processing chamber port by selectively opening and closing the plasma source port and the process gas port.
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Description

Technical Field

[0001] The present invention relates to a remote plasma source separation valve and a method for supplying a plasma source or a process gas using the same. More specifically, the present invention relates to a remote plasma source separation valve that can selectively open and block a plasma source port or a process gas port through a connection adjustment portion, thereby preventing mutual mixing during the supply of the plasma source or the process gas, thereby minimizing the generation of particles, and a method for supplying a plasma source or a process gas using the same. Background Art

[0002] Plasma is a highly ionized gas containing equal numbers of negative ions and electrons. Plasma discharge is used for gas excitation to produce a reactive gas containing ions and free radicals, atoms, and molecules.

[0003] Reactive gases are widely used in various fields, and are typically used in semiconductor manufacturing processes, such as etching, deposition, cleaning, and ashing.

[0004] Such plasmas can be generated by various methods, including direct current discharge, which is achieved by applying a potential between two electrodes in the gas, radio frequency discharge, or microwave discharge, which is achieved by capacitively or inductively coupling energy from a power source into the plasma.

[0005] Here, an inductively coupled plasma source may be used as a remote plasma source that injects plasma generated outside the process chamber into the process chamber. Cleaning may be performed while free radicals generated by the remote plasma source flow into the process chamber and react with, for example, a deposited film.

[0006] On the other hand, since a separate valve for supplying a remote plasma source is not separately provided in a semiconductor device or a display device currently used, a section for supplying a process gas and a section for supplying a plasma source overlap with each other.

[0007] Therefore, fatal particles may be generated in semiconductor devices or display devices, and there is a problem that the device maintenance needs to be frequently performed due to the short generation cycle of these particles, which leads to increased costs and reduced production efficiency.

[0008] Therefore, it is necessary to develop a remote plasma source separation valve with a new structure, which can reduce the generation of particles by separating the section for supplying process gas from the section for supplying remote plasma source, thereby reducing costs and improving productivity.

[0009] As related prior arts, there is Korean Patent Publication No. 10-2020-0048983 (Invention Title: Double Valve Remote Plasma Generator) and the like. Summary of the invention

[0010] An embodiment of the present invention provides a remote plasma source separation valve and a method for supplying a plasma source or a process gas using the same, which can selectively open and block a plasma source port and a process gas port through a connection adjustment portion, thereby preventing mutual mixing during the supply of the plasma source or the process gas, thereby minimizing the generation of particles, preventing an increase in maintenance costs, and improving production efficiency.

[0011] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand other unmentioned problems through the following description.

[0012] A remote plasma source separation valve according to an embodiment of the present invention may include: a valve housing, on which a processing chamber port, a plasma source port and a process gas port are installed, wherein the processing chamber port is connected to the processing chamber, the plasma source port is used to supply a plasma source, and the process gas port is used to supply a process gas; and a connection adjustment portion, which is installed in the valve housing and adjusts the connection between the plasma source port and the processing chamber port or the connection between the process gas port and the processing chamber port by selectively opening and closing the plasma source port and the process gas port.

[0013] According to an embodiment of the present invention, the connection adjustment portion may include: a shaft installed between the plasma source port and the process gas port in the valve housing; and a baffle rotating around the shaft to selectively block the plasma source port or the process gas port.

[0014] The baffle according to an embodiment of the present invention is configured in a plate shape, the size of which is larger than the diameter of the openings formed in the plasma source port and the process gas port, and one side is coupled to the shaft and rotated by the shaft.

[0015] According to an embodiment of the present invention, the connection adjustment portion may further include an annular sealing member, which is disposed on both sides of the baffle plate to seal between the baffle plate, the plasma source port or the process gas port.

[0016] According to an embodiment of the present invention, the separation valve may further include a pressurizing part. When the connection adjustment part selectively blocks the plasma source port or the process gas port, the connection adjustment part is pressurized or maintained in position from below, thereby increasing the blocking force of the connection adjustment part on the plasma source port or the process gas port.

[0017] According to an embodiment of the present invention, the pressurizing part may include: a plasma pressurizing component, which is installed on the source tube in the valve housing in a manner of being located at the lower side of the plasma source port, and when the connection adjustment part blocks the plasma source port, the connection adjustment part is pressurized in the direction of the plasma source port by the action of the piston; and a process pressurizing component, which is installed on the gas pipe in the valve housing in a manner of being located at the lower side of the process gas port, and when the connection adjustment part blocks the process gas port, the connection adjustment part is pressurized in the direction of the process gas port by the action of the piston.

[0018] The plasma pressurizing member and the process pressurizing member according to the embodiment of the present invention may respectively include: a lifting portion that can be lifted and lowered for pressurizing the connection adjustment part; and a piston that generates a driving force for lifting and lowering the lifting portion.

[0019] Moreover, according to an embodiment of the present invention, the method for supplying a plasma source or a process gas using a remote plasma source separation valve may include: a process gas port blocking step, blocking the process gas port with the connection adjustment portion before supplying the plasma source from the plasma source port to the processing chamber port; a plasma source supply step, supplying the plasma source from the plasma source port to the processing chamber port; a plasma source port blocking step, blocking the plasma source port with the connection adjustment portion before supplying the process gas from the process gas port to the processing chamber port; and a process gas supply step, supplying the process gas from the process gas port to the processing chamber port.

[0020] According to an embodiment of the present invention, in the process gas blocking step or the plasma source blocking step, when the process gas port or the plasma source port is blocked by the connection adjustment portion, the connection adjustment portion is pressurized toward the process gas port or the plasma source port by the pressurizing portion.

[0021] Effects of the Invention

[0022] According to an embodiment of the present invention, the plasma source port and the process gas port can be selectively opened and blocked by the connection adjustment portion, thereby preventing mutual mixing during the supply of the plasma source or the process gas, thereby minimizing the generation of particles, preventing an increase in maintenance costs, and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 FIG. 1 is a diagram showing a schematic structure of a semiconductor device including a remote plasma source separation valve according to an embodiment of the present invention.

[0024] Figure 2 It is shown installed in Figure 1 FIG. 1 is a schematic diagram of the structure of a remote plasma source separation valve in a processing chamber.

[0025] Figure 3 It is shown in Figure 2 A diagram showing the steps in opening the plasma source port and blocking the process gas port in a remote plasma source separation valve is shown.

[0026] Figure 4 It is shown in Figure 3 FIG. 1 is a diagram of a step in which the plasma source port is blocked again and the process gas port is opened in the final step of FIG.

[0027] 1: semiconductor device, 10: load lock chamber, 20: transfer chamber, 30: process chamber, 100: remote plasma source separation valve, 110: valve housing, 113: source pipe, 115: gas pipe, 120: process chamber port, 130: plasma source port, 140: process gas port, 150: connection adjustment part, 151: shaft, 153: baffle, 155: sealing member, 160: pressurizing part, 161: plasma pressurizing member, 162: piston, 164: lifting part, 165: process pressurizing member DETAILED DESCRIPTION

[0028] The advantages and / or features of the present invention, and methods for achieving them, will become apparent by reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various forms, but these embodiments are used to make the disclosure of the present invention more complete and provide the full scope of the present invention to those of ordinary skill in the art. The present invention is defined only by the scope of the claims. Throughout the specification, the same symbols are used to mark the same constituent elements.

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0030] Figure 1 1 is a diagram showing a schematic structure of a semiconductor device having a remote plasma source separation valve according to an embodiment of the present invention. Figure 2 It is shown installed in Figure 1 FIG. 1 is a diagram schematically illustrating the structure of a remote plasma source separation valve in a processing chamber.

[0031] First, refer to Figure 1According to an embodiment of the present invention, a semiconductor device 1 may include: a load lock chamber 10 for introducing a substrate for multiple processes on a substrate such as a wafer; a transfer chamber 20 connected to the load lock chamber; and a processing chamber 30 installed around the transfer chamber.

[0032] Although not shown in the drawings, various peripheral devices such as a gas supply source, a power supply, or a control device are provided in each processing chamber 30 .

[0033] However, as described above, in the prior art, particles are generated due to the overlap of the section for supplying the process gas and the section for supplying the remote plasma source, which not only shortens the maintenance cycle of the equipment but also generates additional costs and deteriorates production efficiency.

[0034] Therefore, the present embodiment has a structure that can completely separate the supply of process gas and remote plasma source, which can be achieved by the remote plasma source separation valve 100 described later.

[0035] like Figure 2 As shown, the remote plasma source separation valve 100 according to an embodiment of the present invention may include: a valve housing 110; a process chamber port 120, which is connected to the process chamber 30 (see Figure 1 ) are connected in communication; and a plasma source port 130 and a process gas port 140 are arranged in the upper area of ​​the valve housing 110.

[0036] Furthermore, a connection adjustment portion 150 installed in the valve housing 110 to adjust the connection with the process chamber port 120 by selectively opening and closing the plasma source port 130 and the process gas port 140 may be included.

[0037] If we explain separately, first, Figure 2 As shown, the valve housing 110 of this embodiment is provided with a processing chamber port 120 in the lower region, and the processing chamber 30 (refer to Figure 1 ) connection, the valve structure can be simplified through this connection structure.

[0038] In other words, since both the plasma gas and the process gas can be supplied into the process chamber 30 through the process chamber port 120 of the valve housing 110, there is no need to provide an additional separate valve structure, and thus the structure can be simplified.

[0039] A plasma source port 130 and a process gas port 140 may be symmetrically disposed in the upper region of the valve housing 110. Although not shown, the plasma source port 130 is connected to a plasma source supply source, and the process gas port 140 is connected to a process gas supply source, so that the plasma source can be supplied through the plasma source port 130, and the process gas port 140 can be supplied through the process gas port 140.

[0040] However, in this case, when the plasma source is supplied, the process gas should not be supplied, and vice versa. Therefore, when one of the plasma source port 130 and the process gas port 140 is opened, the other must be completely closed. For this reason, the remote plasma source separation valve 100 of the present embodiment, such as Figure 2 As shown, a connection adjustment portion 150 may be included.

[0041] The connection adjustment unit 150 of this embodiment is as follows: Figure 2 As shown, the valve housing 110 may be installed between the plasma source port 130 and the process gas port 140 to selectively open and close the plasma source port 130 and the process gas port 140 .

[0042] Therefore, when the plasma source port 130 is opened and the process gas port 140 is closed by the connection adjustment part 150 , the plasma source may be supplied from the plasma source port 130 to the process chamber port 120 .

[0043] In addition, when the plasma source port 130 is closed and the process gas port 140 is opened by the connection adjustment part 150 , the process gas may be supplied from the process gas port 140 to the process chamber port 120 .

[0044] The connection adjustment portion 150 may include: a shaft 151 installed between the plasma source port 130 and the process gas port 140; and a baffle 153 that rotates around the shaft 151 and selectively blocks the plasma source port 130 or the process gas port 140.

[0045] Figure 2 The state in which the plasma source port 130 is blocked by the connection adjustment portion 150 is shown. In this way, when the plasma source port 130 is blocked by the connection adjustment portion 150, the process gas port 140 is opened, so that the process gas can be supplied into the valve housing 110 and supplied to the process chamber 30 through the process chamber port 120.

[0046] The baffle 153 of this embodiment can rotate with the shaft 151 as the rotation axis. At this time, the baffle 153 is set to be, for example, a plate with a diameter larger than the diameter of the plasma source port 130 or the process gas port 140, so that the ports 130 and 140 can be completely blocked.

[0047] However, in order to better seal between the baffle 153 and the ports 130 , 140 , an annular sealing member 155 , such as an O-ring, may be installed on the upper and lower surfaces of the baffle 153 .

[0048] refer to Figure 2 The sealing member 155 disposed on the baffle 153 contacts the opening portion of the plasma source port 130, whereby the baffle 153 can completely block the plasma source port 130. Therefore, when the process gas is supplied from the process gas port 140 to the valve housing 110, mixing with the plasma source can be prevented in advance.

[0049] To explain in more detail, the sealing member 155 may be provided on both sides of the baffle 153. As described above, the baffle 153 has a structure that rotates through the shaft 151, and when one side of the baffle 153 blocks the plasma source port 130, the other side needs to block the process gas port 140, so the sealing member 155 may be provided not only on one side of the baffle 153 but also on the other side.

[0050] On the other hand, Figure 2 As shown, the remote plasma source separation valve 100 of the present embodiment may further include a pressurizing portion 140. When the plasma source port 130 or the process gas port 140 is blocked by the connecting adjustment portion 150, the pressurizing portion 160 pressurizes the baffle 153 of the connecting adjustment portion 150 toward the ports 130 and 140, thereby enabling the ports 130 and 140 to be more reliably blocked by the connecting adjustment portion 150.

[0051] In other words, for example, the plasma source port 130 is blocked by the connection adjustment part 150 and the connection adjustment part is pressed toward the plasma source port 130 or the position of the connection adjustment part 150 is maintained, so that the plasma source port 130 can be blocked more reliably.

[0052] like Figure 2 As shown, the pressurizing part 160 of the present embodiment may include a plasma pressurizing member 161 and a process pressurizing member 165 .

[0053] First, the plasma pressurizing component 161 is installed on the source tube 113 formed on the valve housing 110 in a manner of being located at the lower side of the plasma source port 130. When the connection adjustment part 150 blocks the plasma source port 130, the connection adjustment part 150 can be pressurized toward the plasma source port 130 by the action of the piston.

[0054] The process pressurizing component 165 is installed on the gas pipe 115 formed on the valve housing 110 in a manner of being located at the lower side of the process gas port 140. When the connection adjustment part 150 blocks the process gas port 140, the connection adjustment part 150 can be pressurized toward the process gas port 140 by the action of the piston.

[0055] The plasma pressurizing component 161 and the process pressurizing component 165 have corresponding structures and working principles, wherein reference Figure 2 The structure of the plasma pressurizing member 161 is described. The plasma pressurizing member 161 may include: a lifting portion 164 that can be lifted and lowered for pressurizing the connection adjustment portion 150; and a piston 162 that generates a driving force for lifting and lowering the lifting portion 164.

[0056] The upper surface of the lifting portion 162 can pressurize the lower surface of the baffle 153 connected to the adjustment part 150, and as described above, the sealing member 155 is arranged on the upper and lower surfaces of the baffle 153, so the pressure transmitted from the lifting portion 164 to the baffle 153 can be buffered.

[0057] Thus, in this embodiment, by providing the connection adjustment part 150 and the pressurizing part 160, the plasma source port 130 or the process gas port 140 can be reliably opened or blocked, thereby preventing the plasma source and the process gas port from mixing with each other, and accurately supplying the plasma source and the process gas to the processing chamber 30 according to the operating sequence.

[0058] Next, a method of supplying a plasma source or a process gas using the remote plasma source separation valve having the above-described structure will be described.

[0059] However, the method of supplying the plasma source first and then the process gas is described below. However, it goes without saying that the process gas may be supplied first and then the plasma source may be supplied.

[0060] Figure 3 It is shown in Figure 2 A diagram showing the steps of a remote plasma source separation valve opening a plasma source port and blocking a process gas port, Figure 4 It is shown in Figure 3 FIG. 1 is a diagram of a step in which the plasma source port is blocked again and the process gas port is opened in the final step of FIG.

[0061] The method of supplying a plasma source or a process gas using the remote plasma source separation valve 100 of this embodiment may include: a process gas port blocking step, a plasma source supplying step, a plasma source port blocking step, and a process gas supplying step.

[0062] In the process gas port blocking step of the present embodiment, the process gas port 140 is blocked by the connection adjustment portion 150, and then, in the plasma source supplying step, the plasma source is supplied to the process chamber port 120 through the plasma source port 130. For example, this can be done according to Figure 3 Execute in the order shown.

[0063] refer to Figure 3 , the plasma pressurizing component 161 in state (a) is lowered to state (b), and then, as in (c), the baffle 153 connected to the adjustment part 150 is rotated to block the process gas port 140 with the baffle 153, and then, as in (d), the process pressurizing component 165 is lifted, and then, as in (e), the plasma source is supplied from the plasma source port 130 to the opened processing chamber port 120.

[0064] In addition, in the plasma source port blocking step of the present embodiment, the plasma source port 130 is blocked by the connection adjustment portion 150, and then, in the process gas supplying step, the process gas is supplied to the process chamber port 120 through the process gas port 140. For example, this can be done according to Figure 4 Execute in the order shown.

[0065] like Figure 4 As shown, the process pressurizing component 165 in state (a) is lowered to state (b), and then, as (c), the baffle 153 connected to the adjustment part 150 is rotated to block the plasma source port 140 with the baffle 153, and then, as (d), the plasma pressurizing component 161 is lifted, and then, as (e), the process gas is supplied from the process gas port 140 to the opened processing chamber port 120.

[0066] As described above, according to one embodiment of the present invention, since the plasma source port 130 and the process gas port 140 can be selectively opened and blocked by the connection adjustment portion 150, mutual mixing can be prevented during the supply of the plasma source or the process gas, thereby minimizing the generation of particles, preventing an increase in maintenance costs, and improving production efficiency.

[0067] Although specific embodiments according to the present invention have been described so far, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments but should be defined by the claims and their equivalents.

[0068] As described above, although the present invention is described with reference to limited embodiments and drawings, the present invention is not limited to the above embodiments, and a person skilled in the art of the present invention can make various modifications and variations based on the above description. Therefore, the spirit of the present invention should be understood only through the claims, and all equivalent or equivalent variations thereof will fall within the scope of the spirit of the present invention.

Claims

1. A remote plasma source separation valve, characterized in that: include: a valve housing, on which a process chamber port, a plasma source port and a process gas port are installed, wherein the process chamber port is connected to the process chamber, the plasma source port is used to supply a plasma source, and the process gas port is used to supply a process gas; and A connection adjustment portion is installed in the valve housing, and adjusts the connection between the plasma source port and the processing chamber port or the connection between the process gas port and the processing chamber port by selectively opening and closing the plasma source port and the process gas port. The connection adjustment unit comprises: a shaft mounted within the valve housing between the plasma source port and the process gas port; and a baffle, rotating about the axis, selectively blocking the plasma source port or the process gas port, The invention also includes a pressurizing part, which pressurizes or holds the baffle of the connection adjustment part from below when the connection adjustment part selectively blocks the plasma source port or the process gas port, thereby increasing the blocking force of the connection adjustment part on the plasma source port or the process gas port. The pressurizing part comprises: a plasma pressurizing member installed on the source tube in the valve housing in a manner of being located below the plasma source port, and when the connection adjusting portion blocks the plasma source port, the connection adjusting portion is pressurized toward the plasma source port through the action of the piston; and The process pressurizing member is installed on the gas pipe in the valve housing in a manner of being located at the lower side of the process gas port. When the connection adjustment part blocks the process gas port, the connection adjustment part is pressurized toward the process gas port through the action of the piston. The plasma pressurizing component and the process pressurizing component respectively include: A lifting part, which can be raised and lowered, and is used to pressurize the connection adjustment part; and The piston generates a driving force for raising and lowering the lifting part.

2. The remote plasma source separation valve according to claim 1, characterized in that: The baffle is configured in a plate shape, the size of which is larger than the diameter of the openings formed in the plasma source port and the process gas port, and one side of the baffle is coupled to the shaft and rotated by the shaft.

3. The remote plasma source separation valve according to claim 2, characterized in that: The connection adjustment portion further includes an annular sealing component, which is disposed on two sides of the baffle plate and is used to seal between the baffle plate, the plasma source port or the process gas port.

Citation Information

Patent Citations

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