Semiconductor cleaning device and semiconductor process equipment with same

Abstract

The utility model provides a semiconductor cleaning device and semiconductor process equipment with the same. The semiconductor cleaning device comprises a first remote plasma source cleaning system and a second remote plasma source cleaning system. The first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction cavity, a base is arranged in the reaction cavity, a first air inlet is formed in the top of the reaction cavity, and a second air inlet is formed in the side wall of the reaction cavity; the first remote plasma source cleaning system is communicated with the first air inlet; the second remote plasma source cleaning system is communicated with the second air inlet; the vertical height from the second air inlet to the bottom of the reaction cavity is smaller than the vertical height from the lower surface of the base to the bottom of the reaction cavity; the second remote plasma source cleaning system shares the cleaning gas source of the first remote plasma source cleaning system.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, especially to chamber cleaning structure of semiconductor process equipment. BACKGROUND

[0002] After the deposition, etching and other process steps have been carried out in the process chamber, the process chamber needs to be cleaned to remove the process gas residues that may have been formed on the chamber wall. For example, in the existing chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) thin film process, due to the diffusion characteristics of the process gas, not only will the thin film be formed on the wafer surface, but also the deposition will be formed on the surface of the shower plate, the sidewall of the reaction chamber, the bottom of the heating disc, the inside of the exhaust system, etc.

[0003] Therefore, after the process is completed, the reaction chamber needs to be cleaned, and the commonly used method is to use a remote plasma source (RPS) to clean the chamber. The remote plasma source (RPS) is also called a remote high-density plasma generator, which is the core equipment in the process of semiconductor and chip manufacturing. The remote plasma source (RPS) generates plasma by exciting gas through radio frequency or microwave. The free radicals (activated gas molecules) generated after the gas is excited can effectively clean the silicon dust or particulate matter deposited inside the chip structure.

[0004] The remote plasma source (RPS) delivers the plasma to the gas inlet at the upper end of the process chamber through the remote transmission channel, and the plasma is uniformly diffused after flowing through the shower plate to fully clean the reaction chamber, the heating disc, etc.

[0005] However, the defect of this structure is that there is often a cleaning dead zone under the susceptor, and the cleaning air cannot effectively remove the dust or particulate matter under the susceptor. In addition, the gas extracted by the exhaust system is usually contaminated gas doped with various impurities or particulate matter, and over time, various gas residues may be deposited in the vacuum pipe or vacuum pump of the exhaust system, and in severe cases, the vacuum pump may even be stuck. UTILITY MODEL CONTENTS

[0006] In order to improve the cleaning effect of the chamber, the utility model provides a semiconductor cleaning device and a semiconductor process equipment with the semiconductor cleaning device.

[0007] The semiconductor cleaning device comprises a first remote plasma source cleaning system and a second remote plasma source cleaning system.

[0008] The first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction chamber, the reaction chamber has a susceptor in the interior, a first gas inlet on the top, and a second gas inlet on the sidewall.

[0009] The first remote plasma source cleaning system is communicated with the first gas inlet.

[0010] The second remote plasma source cleaning system is communicated with the second gas inlet.

[0011] The vertical height from the second gas inlet to the bottom of the reaction chamber is less than the vertical height from the lower surface of the susceptor to the bottom of the reaction chamber; and the second remote plasma source cleaning system shares the cleaning gas source of the first remote plasma source cleaning system.

[0012] In one embodiment, the second remote plasma source cleaning system shares the first remote plasma source of the first remote plasma source cleaning system.

[0013] In one embodiment, the first remote plasma source cleaning system comprises the cleaning gas source, a first cleaning gas delivery pipeline, the first remote plasma source, and a first plasma delivery pipeline; the cleaning gas source is connected with the first remote plasma source through the first cleaning gas delivery pipeline, the first remote plasma source excites the cleaning gas source to generate excited cleaning gas; the first remote plasma source is connected with the first gas inlet of the reaction chamber through the first plasma delivery pipeline; and the excited cleaning gas is delivered into the reaction chamber from the first gas inlet through the first plasma delivery pipeline.

[0014] In one embodiment, the second remote plasma source cleaning system comprises a second plasma delivery pipeline, the second plasma delivery pipeline has a gas inlet end and a gas outlet end, the gas inlet end is connected with the output end of the first remote plasma source, and the gas outlet end is communicated with the second gas inlet on the sidewall of the reaction chamber; and the excited cleaning gas generated by the first remote plasma source is delivered to the lower area of the substrate through the second plasma delivery pipeline.

[0015] The utility model also provides a semiconductor cleaning device, the semiconductor cleaning device includes: first remote plasma source cleaning system and second remote plasma source cleaning system.

[0016] The first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction chamber.

[0017] The reaction chamber has a susceptor in the interior, a first gas inlet on the top, and a vacuum pipe connected with the bottom.

[0018] The first remote plasma source cleaning system is connected to the first gas inlet.

[0019] The second remote plasma source cleaning system is connected to a sidewall gas inlet of the vacuum tube.

[0020] The second remote plasma source cleaning system shares a cleaning gas source of the first remote plasma source cleaning system.

[0021] In one embodiment, the first remote plasma source cleaning system comprises the cleaning gas source, a first cleaning gas delivery pipeline, a first remote plasma source, and a first plasma delivery pipeline; the cleaning gas source is connected to the first remote plasma source through the first cleaning gas delivery pipeline, the first remote plasma source excites the cleaning gas source to generate excited cleaning gas; the first remote plasma source is connected to the first gas inlet of the reaction chamber through the first plasma delivery pipeline; and the excited cleaning gas is delivered into the reaction chamber from the first gas inlet through the first plasma delivery pipeline.

[0022] In one embodiment, the second remote plasma source cleaning system comprises a second remote plasma source, a second cleaning gas delivery pipeline, and a second plasma delivery pipeline.

[0023] In one embodiment, one end of the second plasma delivery pipeline is connected to the cleaning gas source, and the other end is connected to an input end of the second remote plasma source; the cleaning gas source is connected to the second remote plasma source through the second cleaning gas delivery pipeline; the second remote plasma source excites the cleaning gas source to generate excited cleaning gas; one end of the second plasma delivery pipeline is connected to an output end of the second remote plasma source, and the other end is connected to a sidewall gas inlet of the vacuum tube; and the excited cleaning gas generated by the second remote plasma source is delivered into the vacuum tube through the second plasma delivery pipeline.

[0024] In one embodiment, the second remote plasma source cleaning system further comprises a third plasma delivery pipeline, and the bottom or sidewall of the reaction chamber has a third gas inlet; one end of the third plasma delivery pipeline is connected to the output end of the second remote plasma source, and the other end is connected to the third gas inlet.

[0025] The semiconductor process equipment with the cleaning device comprises the semiconductor cleaning device and the reaction chamber connected with the semiconductor cleaning device.

[0026] The semiconductor cleaning device and the semiconductor process equipment have simple structures, and can effectively clean the dead zone position below the pedestal. In addition, the semiconductor cleaning device and the semiconductor process equipment can also simultaneously improve the cleaning effect of the exhaust system and prolong the service life of the exhaust system. BRIEF DESCRIPTION OF DRAWINGS

[0027] The above utility model content and the following specific embodiment of the utility model can be better understood when reading in combination with the drawings. It should be noted that the drawings are only examples of the claimed utility model. In the drawings, the same reference signs represent the same or similar elements.

[0028] Figure 1 A semiconductor process equipment in the prior art is shown;

[0029] Figure 2 A semiconductor process equipment with a cleaning device according to an embodiment of the utility model is shown;

[0030] Figure 3 A semiconductor process equipment with a cleaning device according to an embodiment of the utility model is shown;

[0031] Figure 4 A semiconductor process equipment with a cleaning device according to an embodiment of the utility model is shown. DETAILED DESCRIPTION

[0032] The detailed features and advantages of the utility model will be described in detail in the specific embodiment below, and the content is sufficient to enable any person skilled in the art to understand the technical content of the utility model and implement it, and according to the description, claims and drawings disclosed in the specification, a person skilled in the art can easily understand the related purposes and advantages of the utility model. Although the description of the utility model will be introduced in combination with the preferred embodiment, this does not mean that the features of the utility model are limited to this embodiment. On the contrary, the purpose of introducing the utility model in combination with the embodiment is to cover other options or modifications that may be extended based on the claims of the utility model. In order to provide a deep understanding of the utility model, many specific details will be included in the following description. The utility model can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the utility model, some specific details will be omitted in the description.

[0033] In the description of the utility model, it is necessary to explain that, unless there is definite stipulation and limitation, the terms "mount", "link", "connect" should be understood broadly, for example, it can be fixed connection, also can be detachable connection, or integrally connected, can be mechanical connection, also can be electrical connection, can be direct connection, also can be indirect connection through intermediate medium, can be the intercommunication of two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to specific circumstances.

[0034] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and related drawings. The relative terms are only for the convenience of description, and they do not represent that the device described should be manufactured or operated in a specific orientation, so they should not be understood as a limitation on the utility model.

[0035] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, passages, assemblies, regions, layers and / or parts, these components, passages, assemblies, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, passages, assemblies, regions, layers and / or parts. In addition, the terms "first", "second", "third" are only for description purpose, and cannot be understood as indicating or implying relative importance.

[0036] As shown in the present application and claims, unless the context clearly indicates otherwise, "one", "a", "an" and / or "the" do not refer to the singular, but can also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0037] Some embodiments use numbers to describe ingredients, attribute quantities, it should be understood that such numbers used in the description of embodiments are in some examples modified by the adjectives "about", "approximately" or "generally". Unless otherwise stated, "about", "approximately" or "generally" indicates that the number allows a variation of ±20%. Accordingly, in some embodiments, the numerical parameters in the specification and claims are approximations that can vary depending on the desired characteristics of the individual embodiments. In some embodiments, numerical parameters should be considered in the context of the number of significant digits and rounding off, as is customary in the art. Although the numerical ranges and parameters in some embodiments of the present application are approximations, in specific embodiments, these numerical values are set to be as precise as possible.

[0038] Also, certain terminology has been used for the purpose of reference only, and thus use of terms such as "one embodiment," "an embodiment" and / or "some embodiments” throughout this description should be considered self-evident as written literacy any meritorious combinations of the described features. Furthermore, it is to be understood that the use of certain specific terms will not function to limit the subject matter presented herein.

[0039] Figure 1 Figure 1 illustrates a prior art semiconductor processing apparatus, particularly a processing apparatus using plasma. The semiconductor processing apparatus includes a reaction chamber 100 having a chamber to house devices and components for various processes. The chamber has a showerhead assembly 103 inside and a gas inlet on top. The top of the reaction chamber 100 is connected to a gas supply system through a top gas inlet, which is configured to provide a reaction gas or a cleaning gas into the chamber. The showerhead assembly 103 is used to uniformly deliver the gas from the top gas inlet to above the susceptor 102. The bottom of the reaction chamber 100 is connected to a motor 101, which controls the lifting of the susceptor 102 in the chamber. The susceptor 102 can carry a substrate. The reaction chamber 100 is also connected to an exhaust system 104 below. The exhaust system 104 has a foreline and a vacuum pump. The front end of the vacuum pump is connected to the reaction chamber 100 through the foreline. The exhaust system 104 is configured to exhaust the reaction gas or the cleaning gas in the reaction chamber 100.

[0040] The gas supply system includes a remote plasma source 122 and a gas source 120. As shown, the remote plasma source 122 is connected to the top gas inlet of the reaction chamber 100 through a plasma delivery line. The remote plasma source 122 excites the gas source 120, and the excited plasma is delivered to the top gas inlet through the plasma delivery line and uniformly diffused after passing through the showerhead. Figure 1

[0041] In one embodiment, the gas source 120 can be a cleaning gas. The cleaning gas is excited by the remote plasma source 122 to form an excited cleaning gas, which is diffused into the reaction chamber 100 through the showerhead.

[0042] As shown in the structure of Figure 2, it is difficult for the cleaning gas to reach the bottom of the susceptor 102, so it is difficult to clean the area below the support components or the substrate, which can easily deposit unwanted particles over time and become a cleaning dead zone. Figure 1

[0043] ​​In addition, process gas residues are easily generated in the vacuum pipe of the exhaust system 104, and particulate matter is generated after the process gas reacts, which easily causes internal blockage of the vacuum pipe and even causes the vacuum pump to be stuck. Therefore, fully and effectively cleaning the vacuum pipe can effectively improve the service life of the vacuum pipe and even the vacuum pump.

[0044] Figure 2 A semiconductor process equipment according to an embodiment of the present application is shown. The semiconductor process equipment includes a reaction cavity 100 and a semiconductor cleaning device connected with the reaction cavity 100. The semiconductor cleaning device includes a first remote plasma source cleaning system (first RPS cleaning system) and a second remote plasma source cleaning system (second RPS cleaning system).

[0045] The reaction cavity 100 has a cavity to accommodate devices and components for various process treatments. The cavity has a susceptor 102 inside, a first gas inlet on the top, and a second gas inlet on the side wall. The top of the reaction cavity 100 is connected with the first RPS cleaning system through the first gas inlet. The first RPS cleaning system is configured to provide cleaning gas into the cavity for cleaning.

[0046] The first RPS cleaning system includes a cleaning gas source 120, a first cleaning gas delivery pipeline 201, a first remote plasma source 122, and a first plasma delivery pipeline 121.

[0047] The cleaning gas source 120 is connected with the first remote plasma source 122 through the first cleaning gas delivery pipeline 201. The first remote plasma source 122 excites the cleaning gas source 120 to generate excited cleaning gas.

[0048] The first remote plasma source 122 is connected with the reaction cavity 100 through the first plasma delivery pipeline 121. The excited cleaning gas generated by the first remote plasma source 122 is delivered to the first gas inlet on the top of the reaction cavity 100 through the first plasma delivery pipeline 121, so as to enter the inside of the reaction cavity 100 for cleaning process.

[0049] The semiconductor process equipment of the present application further includes a second RPS cleaning system. The second RPS cleaning system shares the cleaning gas source 120 and the first remote plasma source 122 of the first RPS cleaning system. In Figure 2In the embodiment, the second RPS cleaning system includes a second plasma delivery pipe 202. The second plasma delivery pipe 202 has an inlet end and an outlet end. The inlet end is connected to the output end of the first remote plasma source 122. The outlet end is connected to a second inlet port on the sidewall of the reaction chamber 100. The vertical height of the second inlet port to the bottom of the reaction chamber 100 is less than the vertical height of the lower surface of the susceptor to the bottom of the reaction chamber 100. The excited cleaning gas generated by the first remote plasma source 122 is delivered to the position below the substrate through the second plasma delivery pipe 202, so as to clean the dead angle below the substrate. The cleaning gas mixed with dust or particles after cleaning is removed by the lower exhaust system 123.

[0050] The second RPS cleaning system of the utility model shares the cleaning gas source 120 and the remote plasma source 122 of the first RPS cleaning system, can clean the dead angle position below the susceptor which is not easy to clean, is not only simple in structure, but also greatly improves the cleaning effect.

[0051] Figure 3 A semiconductor process equipment according to an embodiment of the utility model is shown. The semiconductor process equipment includes a reaction chamber 100, a vacuum pipe 303 and a semiconductor cleaning device connected with the reaction chamber 100 and the vacuum pipe 303. The semiconductor cleaning device includes a first remote plasma source cleaning system (first RPS cleaning system) and a second remote plasma source cleaning system (second RPS cleaning system).

[0052] The reaction chamber 100 has a chamber to accommodate devices and components for various process treatments. The top of the reaction chamber 100 has a first inlet port. The reaction chamber 100 is connected with the first RPS cleaning system through the first inlet port. The first RPS cleaning system is configured to provide reaction gas or cleaning gas into the chamber.

[0053] The first RPS cleaning system includes a cleaning gas source 120, a first cleaning gas delivery pipe 201, a first remote plasma source 122 and a first plasma delivery pipe 121.

[0054] The cleaning gas source 120 is connected with the first remote plasma source 122 through the first cleaning gas delivery pipe 201. The first remote plasma source 122 excites the cleaning gas 120 to generate excited cleaning gas.

[0055] The first remote plasma source 122 is connected with the reaction chamber 100 through the first plasma delivery pipe 121. The excited cleaning gas generated by the first remote plasma source 122 is delivered to the top inlet port of the reaction chamber 100 through the plasma delivery pipe 121, so as to enter the inside of the reaction chamber 100 to perform the cleaning process.

[0056] A vacuum tube (Foreline) 303 is also connected below the reaction chamber 100. The vacuum tube 303 is located at the front end of the vacuum pump and is connected to the reaction chamber 100. Process gas residues are easily generated in the vacuum tube 303, and particulate matter is generated after the process gas reacts, which can easily cause internal blockage of the vacuum tube and even cause the vacuum pump to be stuck. Therefore, sufficient and effective cleaning of the vacuum tube can effectively improve the service life of the vacuum tube and even the vacuum pump.

[0057] The semiconductor process equipment of the utility model further includes a second RPS cleaning system. The utility model discloses a vacuum tube side wall opening one gas inlet, namely side wall gas inlet, is used to receive the cleaning gas from the second RPS cleaning system. Figure 3 In an embodiment, the second RPS cleaning system includes a second remote plasma source 302, a second cleaning gas delivery pipeline 301, and a second plasma delivery pipeline 304.

[0058] One end of the second plasma delivery pipeline 301 is connected to the cleaning gas source 120, and the other end is connected to the input end of the second remote plasma source 302.

[0059] The cleaning gas source 120 is connected to the second remote plasma source 302 through the second cleaning gas delivery pipeline 301. The second remote plasma source 302 excites the cleaning gas 120 to generate excited cleaning gas.

[0060] One end of the second plasma delivery pipeline 304 is connected to the output end of the second remote plasma source 302, and the other end is connected to the vacuum tube 303. The cleaning gas excited by the second remote plasma source 302 enters the side wall gas inlet of the vacuum tube 303 through the second plasma delivery pipeline 304, so as to clean the inner wall of the vacuum tube and the valve inside.

[0061] In one embodiment, the second remote plasma source is a small remote plasma source.

[0062] In one embodiment, when there are multiple reaction chambers, the multiple reaction chambers can share the second remote plasma source, or two reaction chambers can share one second remote plasma source.

[0063] The second RPS cleaning system of the utility model shares the cleaning gas source 120 of the first RPS cleaning system, can clean the dust accumulated inside the vacuum tube at the front end of the vacuum pump, is not only simple in structure, and greatly improves the cleaning effect.

[0064] Figure 4A semiconductor process equipment according to an embodiment of the present application is shown. The semiconductor process equipment includes a reaction chamber 100, a vacuum tube 303, and a semiconductor cleaning device connected with the reaction chamber 100 and the vacuum tube 303. The semiconductor cleaning device includes a first remote plasma source cleaning system (first RPS cleaning system) and a second remote plasma source cleaning system (second RPS cleaning system).

[0065] The reaction chamber 100 has a chamber to accommodate devices and components for various process treatments. The top of the reaction chamber 100 has a first gas inlet, and the bottom has a third gas inlet. The reaction chamber 100 is connected with the first RPS cleaning system through the first gas inlet. The first RPS cleaning system is configured to provide a reaction gas or a cleaning gas into the chamber.

[0066] The first RPS cleaning system includes a cleaning gas source 120, a first cleaning gas delivery pipeline 201, a first remote plasma source 122, and a first plasma delivery pipeline 121.

[0067] The cleaning gas source 120 is connected with the first remote plasma source 122 through the first cleaning gas delivery pipeline 201. The first remote plasma source 122 excites the cleaning gas 120 to generate an excited cleaning gas.

[0068] The first remote plasma source 122 is connected with the reaction chamber 100 through the first plasma delivery pipeline 121. The excited cleaning gas generated by the first remote plasma source 122 is delivered to the top gas inlet of the reaction chamber 100 through the plasma delivery pipeline 121, so as to enter the inside of the reaction chamber 100 to perform a cleaning process.

[0069] The reaction chamber 100 is also connected with a vacuum tube (Foreline) 303 below. The vacuum tube 303 is located at the front end of a vacuum pump and is connected with the reaction chamber 100. The vacuum tube 303 is prone to residual process gas, and the process gas generates particulate matter after reaction, which is easy to cause internal blockage of the vacuum tube and even cause the vacuum pump to be stuck. Therefore, fully and effectively cleaning the vacuum tube can effectively improve the service life of the vacuum tube and even the vacuum pump.

[0070] In addition, the lower part of a substrate (see Figure 2 ) in the reaction chamber 100 is difficult to be cleaned by the first RPS cleaning system, and is prone to deposit unwanted particulate matter after a long time, becoming a dead zone for cleaning.

[0071] Therefore, the semiconductor process equipment of the present application further includes a second RPS cleaning system. The second RPS cleaning system can simultaneously clean the dead zone below the substrate and can also clean the vacuum tube.

[0072] In Figure 4In an embodiment, the second RPS cleaning system comprises a second remote plasma source 302, a second cleaning gas delivery pipe 301, a second plasma delivery pipe 304, and a third plasma delivery pipe 401.

[0073] One end of the second plasma delivery pipe 304 is connected to the output end of the second remote plasma source 302, and the other end is connected to the sidewall gas inlet of the vacuum pipe 303.

[0074] The cleaning gas source 120 is connected to the second remote plasma source 302 through the second cleaning gas delivery pipe 301. The second remote plasma source 302 excites the cleaning gas 120 to generate excited cleaning gas.

[0075] One end of the second plasma delivery pipe 304 is connected to the output end of the second remote plasma source 302, and the other end is connected to the sidewall gas inlet of the vacuum pipe 303.

[0076] One end of the third plasma delivery pipe 401 is connected to the output end of the second remote plasma source 302, and the other end is connected to the third gas inlet at the bottom of the reaction chamber 100.

[0077] The excited cleaning gas from the second remote plasma source 302 can enter the vacuum pipe 303 through the second plasma delivery pipe 304 and the space below the susceptor in the reaction chamber 100 through the third plasma delivery pipe 401, so as to clean the inside of the vacuum pipe and the space below the susceptor.

[0078] In an embodiment, the second remote plasma source is a small remote plasma source.

[0079] In an embodiment, when there are multiple reaction chambers, the multiple reaction chambers can share the second remote plasma source, or two reaction chambers can share one second remote plasma source.

[0080] The second RPS cleaning system of the utility model shares the cleaning gas source 120 of the first RPS cleaning system, and uses the second remote plasma source to clean the inside of the vacuum pipe in front of the vacuum pump and the space below the susceptor at the same time. The structure is simple, and the cleaning effect is greatly improved.

[0081] As a variant, Figure 4 As a variant,

[0082] The terminology and phraseology employed herein is only used to describe the illustrative embodiments. The application, however, is made only by the claims. No limitation is intended to the description or depiction of the embodiments unless so implied in the following claims. Other modifications, variations, and alternatives are also possible. Accordingly, the claims as presented are intended to cover all such equivalents.

[0083] Similarly, it is to be noticed that the term "comprising", used in the description, is not intended to exclude other features but to comprise them. Other expressions, such as "containing" or "including", are to be interpreted identically. Furthermore, it is to be noted that the features recited in the claims are meant to be included in at least one embodiment of the application. Likewise, it is to be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0084] Similarly, it is to be noticed that the term "comprising", used in the description, is not intended to exclude other features but to comprise them. Other expressions, such as "containing" or "including", are to be interpreted identically. Furthermore, it is to be noted that the features recited in the claims are meant to be included in at least one embodiment of the application. Likewise, it is to be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

Claims

1. A semiconductor cleaning apparatus characterized by comprising: The semiconductor cleaning device comprises: a first remote plasma source cleaning system and a second remote plasma source cleaning system; the first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction chamber, the reaction chamber has a susceptor in the interior, a first gas inlet on the top, and a second gas inlet on the sidewall; the first remote plasma source cleaning system is communicated with the first gas inlet; the second remote plasma source cleaning system is communicated with the second gas inlet; the vertical height from the second gas inlet to the bottom of the reaction chamber is less than the vertical height from the lower surface of the susceptor to the bottom of the reaction chamber; and the second remote plasma source cleaning system shares the cleaning gas source of the first remote plasma source cleaning system.

2. The semiconductor cleaning apparatus of claim 1, wherein the second remote plasma source cleaning system shares the first remote plasma source of the first remote plasma source cleaning system.

3. The semiconductor cleaning apparatus of claim 2, wherein the first remote plasma source cleaning system comprises the cleaning gas source, a first cleaning gas delivery pipeline, the first remote plasma source, and a first plasma delivery pipeline; the cleaning gas source is connected with the first remote plasma source through the first cleaning gas delivery pipeline, the first remote plasma source excites the cleaning gas source to generate excited cleaning gas; the first remote plasma source is connected with the first gas inlet of the reaction chamber through the first plasma delivery pipeline; and the excited cleaning gas is delivered into the reaction chamber from the first gas inlet through the first plasma delivery pipeline.

4. The semiconductor cleaning apparatus of claim 3, wherein the second remote plasma source cleaning system comprises a second plasma delivery pipeline, which has a gas inlet end and a gas outlet end; the gas inlet end is connected with the output end of the first remote plasma source, and the gas outlet end is communicated with the second gas inlet on the sidewall of the reaction chamber; and the excited cleaning gas generated by the first remote plasma source is delivered to the lower area of the substrate through the second plasma delivery pipeline.

5. A semiconductor cleaning apparatus characterized by comprising: The semiconductor cleaning device comprises: a first remote plasma source cleaning system and a second remote plasma source cleaning system; the first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction chamber; the reaction chamber has a susceptor in the interior, a first gas inlet on the top, and a vacuum pipe connected with the bottom; the first remote plasma source cleaning system is communicated with the first gas inlet; the second remote plasma source cleaning system is communicated with a sidewall gas inlet of the vacuum pipe; the second remote plasma source cleaning system shares the cleaning gas source of the first remote plasma source cleaning system.

6. The semiconductor cleaning apparatus of claim 5, wherein The first remote plasma source cleaning system comprises the cleaning gas source, a first cleaning gas delivery pipeline, a first remote plasma source, and a first plasma delivery pipeline; the cleaning gas source is connected to the first remote plasma source through the first cleaning gas delivery pipeline, the first remote plasma source excites the cleaning gas source to generate excited cleaning gas; the first remote plasma source is connected to the first gas inlet of the reaction chamber through the first plasma delivery pipeline; the excited cleaning gas is delivered into the reaction chamber from the first gas inlet through the first plasma delivery pipeline.

7. The semiconductor cleaning apparatus of claim 6, wherein The second remote plasma source cleaning system comprises a second remote plasma source, a second cleaning gas delivery pipeline, and a second plasma delivery pipeline.

8. The semiconductor cleaning apparatus of claim 7, wherein One end of the second plasma delivery pipeline is connected to the cleaning gas source, and the other end is connected to the input end of the second remote plasma source; the cleaning gas source is connected to the second remote plasma source through the second cleaning gas delivery pipeline; the second remote plasma source excites the cleaning gas source to generate excited cleaning gas; one end of the second plasma delivery pipeline is connected to the output end of the second remote plasma source, and the other end is connected to the sidewall gas inlet of the vacuum tube; the excited cleaning gas generated by the second remote plasma source is delivered into the vacuum tube through the second plasma delivery pipeline.

9. The semiconductor cleaning apparatus of claim 8, wherein The second remote plasma source cleaning system further comprises a third plasma delivery pipeline, and the bottom or sidewall of the reaction chamber has a third gas inlet; one end of the third plasma delivery pipeline is connected to the output end of the second remote plasma source, and the other end is connected to the third gas inlet.

10. A semiconductor process apparatus having a cleaning device, characterized by, The semiconductor process equipment comprises the semiconductor cleaning device according to any one of claims 1 to 9 and the reaction chamber connected to the semiconductor cleaning device.

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