Method for cutting large-size silicon wafers and cutting apparatus for large-size silicon wafers

Abstract

The application relates to the technical field of semiconductors, and provides a cutting method and cutting equipment for large-size silicon wafers. The method comprises the following steps: controlling a silicon rod to be cut to move to a cutting zero point position of a cutting line net; controlling the silicon rod to move to the cutting line net, and controlling a cutting line to cut the silicon rod through periodic reciprocating movement along the circumference of a guide roller assembly to obtain a plurality of large-size silicon wafers; wherein the depth of the cutting line in the silicon rod in a wire feeding process of a first cutting cycle is a target depth, the first rotating direction of the cutting line along the circumference of the guide roller assembly corresponds to the wire feeding process, the second rotating direction of the cutting line along the circumference of the guide roller assembly corresponds to a wire returning process, the first rotating direction is opposite to the second rotating direction, and each cutting cycle comprises the wire feeding process and the wire returning process. The method controls the depth of the cutting line in the silicon rod in the wire feeding process of the first cutting cycle to reach the target depth, so that the influence of cutting line shaking on the thickness and the uniformity of TTV of the large-size silicon wafers is prevented.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a cutting method of large-size silicon wafer and a cutting device of large-size silicon wafer. BACKGROUND

[0002] With the rapid development of semiconductor industry, the demand for silicon wafers is increasing, and cutting silicon rods to obtain qualified silicon wafers is an important part of the production and processing of silicon wafers.

[0003] With the upgrading of semiconductor technology, the optimization of cost is constantly pursued, and small-size silicon wafers of 166mm and below are being rapidly replaced by large-size silicon wafers of 182mm and above, and the market share of large-size silicon wafers of 182mm and 210mm and other specifications is increasing year by year.

[0004] Most of the existing silicon wafer cutting is to drive the cutting line by two guide rollers to cut the silicon rod, and the large-size silicon wafer matches the cutting mode of large shaft spacing. With the increase of shaft spacing, the cutting line is not forced or forced in the radial direction of the guide roller. During the high-speed cutting of the silicon rod, the cutting line is unevenly loaded and has large jumping, resulting in large thickness error of the large-size silicon wafer, which affects the quality of the finished large-size silicon wafer. SUMMARY

[0005] The present application provides a cutting method of large-size silicon wafer and a cutting device of large-size silicon wafer to solve the problem of large thickness error of large-size silicon wafer caused by cutting line jumping in the prior art.

[0006] The present application provides a cutting method of large-size silicon wafer, comprising:

[0007] The silicon rod to be cut is moved to the cutting zero point position of the cutting line net, the cutting line net comprises a plurality of cutting line segments formed by the cutting line being arranged around the guide roller assembly in the circumferential direction of the guide roller assembly, the plurality of cutting line segments are arranged in the axial direction of the guide roller assembly, and the guide roller assembly comprises three guide rollers arranged in a triangular shape, and the axial directions of the three guide rollers are parallel;

[0008] The silicon rod is moved to the cutting line net, and the cutting line is controlled to cut the silicon rod by periodic reciprocating motion in the circumferential direction of the guide roller assembly, thereby obtaining a plurality of large-size silicon wafers;

[0009] In the process of feeding the cutting line into the silicon rod in the first cutting cycle, the depth of the cutting line is the target depth, the first rotation direction of the cutting line in the circumferential direction of the guide roller assembly corresponds to the feeding process, the second rotation direction of the cutting line in the circumferential direction of the guide roller assembly corresponds to the return process, the first rotation direction and the second rotation direction are opposite, and each cutting cycle includes the feeding process and the return process.

[0010] According to the present application, a cutting method of large-size silicon wafer is provided, the target depth is 0.8-1.0mm.

[0011] According to the present application, a cutting method of large-size silicon wafer is provided, the cutting zero position is the position with a target distance from the cutting line net.

[0012] According to the present application, a cutting method of large-size silicon wafer is provided, the target distance is 0.2-0.4mm.

[0013] According to the present application, a cutting method of large-size silicon wafer is provided, the control of moving the silicon rod to be cut to the cutting zero position of the cutting line net comprises:

[0014] controlling the silicon rod to move to a position with a first distance from the cutting line net at a first speed, the first distance is greater than the target distance;

[0015] controlling the silicon rod to move to the cutting zero position at a second speed, the first speed is greater than the second speed.

[0016] According to the present application, a cutting method of large-size silicon wafer is provided, the first distance is 10-20mm.

[0017] The present application also provides a cutting device of large-size silicon wafer, comprising:

[0018] a guide roller assembly, the guide roller assembly comprises three guide rollers arranged in a triangle, the axial directions of the three guide rollers are parallel;

[0019] a cutting line, the cutting line is arranged around the guide roller assembly in the circumferential direction of the guide roller assembly to form a plurality of cutting line segments, the plurality of cutting line segments are arranged in the axial direction of the guide roller assembly to form a cutting line net;

[0020] a workbench, the workbench is used for placing the silicon block to be cut;

[0021] a driving mechanism, the driving mechanism is connected with the guide roller assembly and the cutting line, the driving mechanism is used for driving the cutting line to make periodic reciprocating motion in the circumferential direction of the guide roller assembly;

[0022] a controller, the controller is connected with the workbench and the driving mechanism, the controller is used for controlling the workbench and the driving mechanism to cut the silicon rod based on the above-mentioned cutting method of large-size silicon wafer, so as to obtain large-size silicon wafer.

[0023] The application provides a large-size silicon wafer cutting device, wherein wire grooves are arranged along the circumference of a guide roller, a plurality of the wire grooves are arranged along the circumference of the guide roller, and the wire grooves are used for accommodating the cutting wire segments, and the plurality of wire grooves of the guide roller correspond to the plurality of cutting wire segments one by one.

[0024] The application provides a large-size silicon wafer cutting device, wherein the distance between two adjacent wire grooves is 0.20-0.22 mm, and the diameter of the cutting wire is 0.035-0.040 mm.

[0025] The application provides a large-size silicon wafer cutting device, wherein the wire grooves of two guide rollers corresponding to the cutting wire segments are arranged in a staggered manner.

[0026] The application provides a large-size silicon wafer cutting device, wherein the staggered two wire grooves are staggered by a distance of 0.5-1 mm, and the number of the wire grooves arranged in a staggered manner on the same guide roller is 2-5.

[0027] The application further provides a large-size silicon wafer, which is cut by the large-size silicon wafer cutting method.

[0028] The application further provides a large-size silicon wafer cutting device, which comprises:

[0029] A first processing module is used for controlling a silicon rod to be cut to move to a cutting zero point position of a cutting wire net, the cutting wire net comprises a plurality of cutting wire segments formed by cutting wires arranged along the circumference of a guide roller assembly, the plurality of cutting wire segments are arranged along the axial direction of the guide roller assembly, and the guide roller assembly comprises three guide rollers arranged in a triangular shape, and the axial directions of the three guide rollers are parallel.

[0030] A second processing module is used for controlling the silicon rod to move to the cutting wire net and controlling the cutting wire to cut the silicon rod by periodically reciprocating along the circumference of the guide roller assembly, so as to obtain a plurality of large-size silicon wafers.

[0031] In the application, the depth of the cutting wire cutting into the silicon rod in the wire feeding process of a first cutting period is a target depth, the first rotating direction of the cutting wire along the circumference of the guide roller assembly corresponds to the wire feeding process, the second rotating direction of the cutting wire along the circumference of the guide roller assembly corresponds to a wire returning process, the first rotating direction is opposite to the second rotating direction, and each cutting period comprises the wire feeding process and the wire returning process.

[0032] The application further provides an electronic device, which comprises a memory, a processor, and a computer program stored in the memory and capable of running on the processor, and the processor implements the steps of the large-size silicon wafer cutting method when executing the program.

[0033] The application further provides a non-transitory computer-readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the steps of the cutting method of the large-size silicon wafer.

[0034] The cutting method of the large-size silicon wafer and the cutting device of the large-size silicon wafer provided by the application control the depth of the cutting line in the wire feeding process of the first cutting cycle to reach the target depth, prevent the cutting line from shaking during the cutting process, and affect the thickness and the uniformity of TTV of the large-size silicon wafer, and improve the finished product quality and the cutting yield of the large-size silicon wafer. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0036] Figure 1 is a flowchart of the cutting method of the large-size silicon wafer provided by the application;

[0037] Figure 2 is a three-dimensional structural schematic diagram of the cutting device of the large-size silicon wafer provided by the application;

[0038] Figure 3 is a top view of the cutting device of the large-size silicon wafer provided by the application;

[0039] Figure 4 is a side view of the cutting device of the large-size silicon wafer provided by the application;

[0040] Figure 5 is a structural schematic diagram of the cutting device of the large-size silicon wafer provided by the application;

[0041] Figure 6 is a structural schematic diagram of the electronic device provided by the application.

[0042] Reference signs:

[0043] 110: first guide roller; 111: first bearing box; 120: second guide roller; 121: second bearing box; 130: third guide roller; 131: third bearing box;

[0044] 200: cutting line; 210: cutting line net;

[0045] 310: first wire storage wheel; 320: second wire storage wheel;

[0046] 400: square. DETAILED DESCRIPTION

[0047] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be described clearly and completely below with reference to the drawings in the present application. Obviously, the described embodiments are only some, but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0048] In the description of the embodiments of the present application, it should be noted that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the embodiments of the present application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the embodiments of the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0049] In the description of the embodiments of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or electrically connected, or wired communication connected, or wireless communication connected; it can be directly connected, or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0050] In the embodiments of the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "under" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0051] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any suitable manner in any one or more embodiments or examples.

[0052] In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0053] The cutting process is an important process for preparing silicon wafers. The cutting principle is that abrasive particles are carried on the rotating cutting line, the hardness of the abrasive particles is greater than that of the polycrystalline silicon, and the abrasive particles are constantly ground against the silicon block to play a cutting role.

[0054] The thickness error of the silicon wafer is an important indicator for measuring the quality of the silicon wafer. The parameters representing the thickness error include total thickness variation (TTV), TTV average and thickness average.

[0055] TTV is the deviation between the highest point and the lowest point of the thickness of a silicon wafer at five points. The TTV average is the summation average of the TTV of all silicon wafers in one cutting. The thickness average is the summation average of the thickness of all silicon wafers in one cutting.

[0056] The embodiment of the present application provides a cutting method of a large-size silicon wafer, to solve the problem that the cutting line has large jumping during the cutting process of the large-size silicon wafer, resulting in large thickness error of the large-size silicon wafer, affecting the finished product quality of the large-size silicon wafer.

[0057] The following will be described in combination with Figures 1 to 4 The cutting method of the large-size silicon wafer of the embodiment of the present application is described. The execution subject of the method can be a controller of the device, or a cloud, or an edge server.

[0058] In the embodiment of the present application, the large-size silicon wafer cut by the cutting method of the large-size silicon wafer can be applied to the manufacturing of various semiconductor devices, such as various diodes, transistors, field effect tubes, photovoltaic cells, etc.

[0059] As Figure 1 The cutting method of the large-size silicon wafer of the embodiment of the present application includes steps 11 to 12.

[0060] Step 11, control the silicon rod to be cut to move to the cutting zero point position of the cutting line net 210.

[0061] The cutting line net 210 includes a plurality of cutting line segments formed by the circumferential winding of the cutting line 200 along the guide roller assembly, and the plurality of cutting line segments are arranged along the axial direction of the guide roller assembly. The guide roller assembly includes three guide rollers arranged in a triangular shape, and the axial directions of the three guide rollers are parallel.

[0062] As shown in Figure 2 The guide roller assembly includes a first guide roller 110, a second guide roller 120, and a third guide roller 130 arranged in a triangular shape. The first guide roller 110 and the second guide roller 120 can be located above the third guide roller 130.

[0063] The plurality of cutting line segments are arranged along the axial direction of the guide roller assembly to form the cutting line net 210 between the first guide roller 110 and the second guide roller 120.

[0064] It can be understood that the three guide rollers of the guide roller assembly are arranged in a triangular shape, and the guide roller assembly as a whole is a cube with a triangular base. The cutting line 200 is circumferentially wound around the guide roller assembly, and the cutting line net 210 can be formed at each of the three rectangular faces of the cube to cut the silicon rod.

[0065] In this step, the silicon rod to be cut is controlled to move to the cutting zero position of the cutting line net 210 to realize the tool setting of the silicon rod cutting program.

[0066] In this embodiment, the cutting line 200 can be a diamond cutting line. The diamond cutting line uses tiny particles of diamond as abrasive particles. The hardness of diamond can effectively improve the cutting ability of the cutting line 200 and speed up the cutting speed.

[0067] Step 12, control the silicon rod to move towards the cutting line net 210, and control the cutting line 200 to make periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rod, and obtain a plurality of large-size silicon wafers.

[0068] In this step, the silicon rod is controlled to move towards the cutting line net 210 at a certain speed, and the guide rollers of the guide roller assembly are controlled to alternately rotate in the first rotation direction and the second rotation direction to drive the cutting line 200 to make periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rod, and obtain a plurality of large-size silicon wafers.

[0069] The first rotation direction of the cutting line 200 along the circumferential direction of the guide roller assembly corresponds to the threading process, and the second rotation direction of the cutting line 200 along the circumferential direction of the guide roller assembly corresponds to the returning process. The first rotation direction and the second rotation direction are opposite. Each cutting period includes a threading process and a returning process.

[0070] The three guide rollers of the guide roller assembly rotate in the first rotation direction of the guide roller assembly, driving the cutting line 200 to move in the first rotation direction of the guide roller assembly, corresponding to the wire feeding process of the cutting line 200.

[0071] The three guide rollers of the guide roller assembly rotate in the second rotation direction of the guide roller assembly, driving the cutting line 200 to move in the second rotation direction of the guide roller assembly, corresponding to the wire feeding process of the cutting line 200.

[0072] In this embodiment, each cutting cycle includes an infeed process and a return process. The silicon rod is cut by continuously alternating between the infeed process and the return process.

[0073] For example, such as Figure 2 As shown, the first wire storage wheel 310 and the second wire storage wheel 320 are used to store the cutting wire 200. The first rotation direction is counterclockwise and the second rotation direction is clockwise.

[0074] like Figure 4 As shown, the cutting line 200 starts from the third guide roller 130 and is wound around the guide roller assembly along the second guide roller 120 and the first guide roller 110 in sequence, forming a cutting line mesh 210 on the second guide roller 120 and the first guide roller 110. The distance D is the axial spacing between the second guide roller 120 and the first guide roller 110.

[0075] When the three guide rollers rotate counterclockwise along the circumference of the guide roller assembly, they drive the cutting wire 200 to move counterclockwise, and the cutting wire 200 stored in the first wire storage wheel 310 enters the second wire storage wheel 320.

[0076] When the three guide rollers rotate clockwise along the circumference of the guide roller assembly, they drive the cutting wire 200 to move clockwise, and the cutting wire 200 stored in the second wire storage wheel 320 enters the first wire storage wheel 310.

[0077] Understandably, in the related technologies for cutting large-size silicon wafers, as the axial spacing increases, the wiring length of the cutting line 200 increases, the cutting stroke of the cutting line 200 increases, and the wear unevenness increases, which directly leads to a deterioration in the thickness and TTV uniformity of the silicon wafer.

[0078] In this embodiment, the cutting wire 200 performs a periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rod. The cutting wire 200 cuts the silicon rod through multiple cutting cycles of wire feeding and returning, which can reduce local excessive wear of the cutting wire 200, improve the wear uniformity of the cutting wire 200, and thus improve the thickness and TTV uniformity of large-size silicon wafers.

[0079] In this embodiment, the depth to which the cutting wire 200 cuts into the silicon rod during the first cutting cycle is the target depth, which is the depth to ensure that the cutting wire 200 completely penetrates the silicon rod.

[0080] It should be noted that in this embodiment, the cutting cycle of the cutting line 200 is first carried out in the threading process, and then switched to the returning process, and the directions of the cutting line 200 cutting into the silicon rod in the threading process and the returning process are opposite.

[0081] It can be understood that the threading process and the returning process are switched, the direction of the cutting line 200 cutting into the silicon rod changes, and the speed of the cutting line 200 changes and jitters, in this embodiment, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is ensured to be at the target depth, so that the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer can be prevented when the threading process and the returning process are switched.

[0082] It should be noted that in this embodiment, the large-size silicon wafer cut from the silicon rod can be an N-type silicon wafer, and the large-size silicon wafer can be a silicon wafer with a specification of 182 mm.

[0083] According to the cutting method of the large-size silicon wafer provided by the embodiment of the present application, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is controlled to reach the target depth, so that the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer can be prevented during the cutting process, and the finished product quality and the cutting yield of the large-size silicon wafer are improved.

[0084] In some embodiments, the target depth can be 0.8 mm-1.0 mm.

[0085] In this embodiment, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is set to 0.8 mm-1.0 mm, which effectively prevents the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer.

[0086] It should be noted that the large-size silicon wafer can be a silicon wafer with a specification of 182 mm, or a silicon wafer with a specification of 210 mm, the target depth is set to 0.8 mm-1.0 mm, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is ensured to be between 1 / 4 and 1 / 5 of the size of the finished large-size silicon wafer, the TTV value of the large-size silicon wafer is reduced, and the flatness of the large-size silicon wafer cut is improved.

[0087] In some embodiments, the cutting zero point position is a position at a target distance from the cutting line net 210.

[0088] The cutting zero point position is set to a position at a target distance from the cutting line net 210, at the cutting zero point position, the distance between the silicon rod and the cutting line net 210 is the target distance, and the silicon rod does not contact the cutting line net 210.

[0089] It should be noted that in this embodiment, the large-size silicon wafer cut from the silicon rod can be an N-type silicon wafer, and the large-size silicon wafer can be a silicon wafer with a specification of 182 mm.

[0083] According to the cutting method of the large-size silicon wafer provided by the embodiment of the present application, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is controlled to reach the target depth, so that the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer can be prevented during the cutting process, and the finished product quality and the cutting yield of the large-size silicon wafer are improved.

[0084] In some embodiments, the target depth can be 0.8 mm-1.0 mm.

[0085] In this embodiment, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is set to 0.8 mm-1.0 mm, which effectively prevents the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer.

[0086] It should be noted that the large-size silicon wafer can be a silicon wafer with a specification of 182 mm, or a silicon wafer with a specification of 210 mm, the target depth is set to 0.8 mm-1.0 mm, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is ensured to be between 1 / 4 and 1 / 5 of the size of the finished large-size silicon wafer, the TTV value of the large-size silicon wafer is reduced, and the flatness of the large-size silicon wafer cut is improved.

[0087] In some embodiments, the cutting zero point position is a position at a target distance from the cutting line net 210.

[0088] The cutting zero point position is set to a position at a target distance from the cutting line net 210, at the cutting zero point position, the distance between the silicon rod and the cutting line net 210 is the target distance, and the silicon rod does not contact the cutting line net 210.

[0089] It should be noted that in this embodiment, the large-size silicon wafer cut from the silicon rod can be an N-type silicon wafer, and the large-size silicon wafer can be a silicon wafer with a specification of 182 mm.

[0083] According to the cutting method of the large-size silicon wafer provided by the embodiment of the present application, the depth of the cutting line 200 cutting into the silicon rod in the threading process of the first cutting cycle is controlled to reach the target depth, so that the influence of the jitter of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer can be prevented during the cutting process, and the finished product quality and the cutting yield of the large-size silicon wafer are improved.In this embodiment, the target distance can be 0.2-0.4 mm.

[0090] In actual implementation, the target distance can be 0.3 mm, and when the silicon rod is at the cutting zero position, a gap between the silicon rod and the cutting line net 210 can be inserted into an A4 hard card, which can be used to determine whether the silicon rod is at the cutting zero position.

[0091] In related art, the distance between the silicon rod and the cutting line 200 is usually about 2 mm or completely removed from the cutting line 200, so that the cutting line 200 cannot be stably cut into the silicon rod, thereby affecting the thickness and TTV uniformity of the finished silicon wafer.

[0092] It should be noted that moving the silicon rod to the cutting zero position at the target distance from the cutting line net 210 can ensure that the cutting line net 210 is stably cut into the silicon rod, thereby improving the thickness and TTV uniformity of the large-size silicon wafer.

[0093] In some embodiments, step 11 comprises: controlling the silicon rod to move to a position at a first distance from the cutting line net 210 at a first speed, the first distance being greater than the target distance.

[0094] Controlling the silicon rod to move to the cutting zero position at a second speed, the first speed being greater than the second speed.

[0095] In this embodiment, the silicon rod is first moved to a position at a first distance from the cutting line net 210 at a fast speed, and then moved at a slow speed, and finally moved to the cutting zero position, thereby ensuring the accuracy of the tool setting position while reducing the time required for tool setting.

[0096] In actual implementation, the first distance can be 10-20 mm.

[0097] In actual implementation, the worktable is first lowered at the first speed, the silicon rod on the worktable is moved to a position 15 mm above the cutting line net 210, and then lowered at a slow speed, the silicon rod is moved to the cutting zero position, the target distance can be 0.3 mm, the silicon rod and the cutting line net 210 are ensured not to contact each other, and a gap therebetween can be inserted into an A4 hard card.

[0098] The arrangement of the cutting line net 210 on the guide roller assembly in the embodiments of the present application is described below.

[0099] In some embodiments, a wire groove is arranged along the circumference of the guide roller, a plurality of wire grooves are arranged along the circumference of the guide roller, the wire groove is used to accommodate the cutting line segment, and the plurality of wire grooves of the guide roller correspond to the plurality of cutting line segments one by one.

[0100] A wire groove is arranged along the circumference of the guide roller, the wire groove can be an annular groove around the guide roller, and when the cutting line 200 is arranged on the guide roller assembly, the cutting line 200 is placed in the wire groove.

[0101] In this embodiment, when the guide rollers of the guide roller assembly rotate in different directions, the cutting wire 200 in the wire slot is driven to move in different directions, and through the alternation of the wire feeding process and the wire returning process, the silicon rod is reciprocatingly cut to obtain a plurality of large-size silicon wafers.

[0102] In this embodiment, the distance between the two adjacent wire slots is 0.20-0.22 mm, and the diameter of the cutting wire 200 is 0.035-0.040 mm.

[0103] In actual implementation, the distance between the two adjacent wire slots on the same guide roller can be 0.21 mm, and the diameter of the cutting wire 200 can be 0.038 mm.

[0104] In this embodiment, the tension of the cutting wire 200 provided on the guide roller assembly can be set to 3.0-4.4 N, the distance between the two adjacent wire slots is 0.20-0.22 mm, and the diameter of the cutting wire 200 is 0.035-0.040 mm. The cutting wire net 210 is suitable for cutting large-size silicon wafers with a thickness of 130-150 microns.

[0105] In some embodiments, the wire slots of the two guide rollers corresponding to the cutting wire segment are staggered.

[0106] In this embodiment, a plurality of wire slots are uniformly arranged on each guide roller of the guide roller assembly, the cutting wire segment of the cutting wire net 210 is between the two guide rollers, one end of the cutting wire segment is in the wire slot of one guide roller, and the other end of the cutting wire segment is in the other guide roller.

[0107] The wire slots of the two guide rollers corresponding to the cutting wire segment are staggered, that is, the wire slots at the two ends of the cutting wire segment are staggered, and the cutting wire segment is not vertically in contact with the guide rollers.

[0108] In the related art, the increase of the shaft distance, the cutting wire 200 is not forced or forced in the radial direction, the cutting wire 200 is not uniformly loaded in the high-speed cutting process of the silicon rod, which leads to large jumping in the radial direction, and affects the uniformity of the thickness and TTV of the silicon wafer.

[0109] In this embodiment, the wire slots of the two guide rollers corresponding to the cutting wire segment are staggered, and this kind of wiring mode compensates the force of the cutting wire 200 in the radial direction of the guide roller, provides the stability of the cutting wire 200, controls the jumping of the cutting wire 200, and improves the uniformity of the thickness and TTV of the large-size silicon wafer.

[0110] In some embodiments, the staggered two wire slots are staggered by a distance of 0.5-1 mm, and the number of the staggered wire slots on the same guide roller is 2-5.

[0111] In this embodiment, the distance between the two grooves can be calculated based on the distance between the ends of the grooves and their respective guide rollers.

[0112] In actual operation, a bearing housing is installed at the end of the guide roller. By measuring the distance of each of the two grooves from their respective bearing housings, the difference between the two distances is the offset distance between the two grooves.

[0113] For example, the guide roller assembly includes a first guide roller 110, a second guide roller 120 and a third guide roller 130. A first bearing housing 111 is installed at the end of the first guide roller 110, a second bearing housing 121 is installed at the end of the second guide roller 120 and a third bearing housing 131 is installed at the end of the third guide roller 130.

[0114] like Figure 3 As shown, the distance from the upper groove of the first guide roller 110 to the first bearing housing 111 is measured as L1 using a right-angle ruler 400, and the distance from the upper groove of the second guide roller 120 to the second bearing housing 121 is measured as L2. The distance between the two grooves is L2 minus L1.

[0115] In this embodiment, the distance between the two grooves can be 0.5 mm to 1 mm, and the number of grooves arranged in an alternating manner on the guide roller can be 2 to 5, so that at least 2 to 5 cutting segments that are not perpendicular to the guide roller are wound on the guide roller, which compensates for the force on the cutting line 200 in the radial direction of the guide roller, provides stability to the cutting line 200, controls the jump of the cutting line 200, and improves the thickness and TTV uniformity of large-size silicon wafers.

[0116] In this embodiment of the invention, the staggered wiring of the cutting lines 200 on the three guide rollers ensures that the cutting lines 200 are subjected to balanced forces in the radial direction of the guide rollers, reducing the jump of the cutting lines 200. The setting of the distance between adjacent cutting line segments and the setting of the wire diameter of the cutting lines 200 enable the thin-film cutting of large-size silicon wafers.

[0117] The following is a specific example.

[0118] Step 1: Bond the silicon rod.

[0119] In this step, the flatness standard of the crystal holder and plastic plate bonded to the silicon rod is: crystal holder = 0.2 mm - 0.3 mm, plastic plate = 0.2 mm - 0.3 mm.

[0120] The thickness of the adhesive layer on the plastic sheet can be set to 0.2 mm to 0.35 mm, and the side length of the silicon rod cross-section is 182 ± 0.25 mm to cut large-size silicon wafers of specification 182.

[0121] In the adhesion, the amount of iron plate glue is 0.052g / cm2-0.062g / cm2, the amount of stick glue is 0.07g / cm2-0.084g / cm2.

[0122] In actual execution, the crystal holder is adhered to the plastic plate, the plastic plate is adhered to the silicon block, the centering is ensured, and the pressure intensity of 6500N / m2-900N / m2 is sequentially pressed on the surface of the plastic plate and the silicon block, and the curing time is less than 1 hour and more than 2.5 hours, respectively.

[0123] Step two, cutting line 200 arrangement.

[0124] The cutting line 200 is arranged on the guide roller assembly, the initial wiring network width is 30mm-50mm, the cutting line 200 is arranged on the guide roller assembly with a certain tension, and then the cutting line network 210 including multiple cutting line segments is arranged.

[0125] The distance between the staggered two wire grooves is 0.5mm-1mm, the number of wire grooves staggered on the same guide roller is 2-5, the cutting line 200 is arranged on the guide roller assembly, and the cutting line network 210 is formed between the first guide roller 110 and the second guide roller 120.

[0126] Step three, tool setting.

[0127] The silicon rod is loaded into the slicing chamber, and the crystal holder is clamped tightly, and no shaking is allowed. First, the workbench is quickly lowered to a height of 10mm-20mm from the cutting line network 210, and then the speed is slowly lowered.

[0128] The silicon rod is lowered to the cutting zero position, and the silicon rod and the wire network are not allowed to contact each other, and the gap in the middle is just inserted into an A4 hard card paper, and the thickness of the A4 hard card paper is about 0.3mm.

[0129] Step four, cutting program setting.

[0130] In this step, the cutting program is set according to the values shown in Table 1, the workbench is controlled to descend, the guide roller is rotated to drive the cutting line 200 to cut the silicon rod.

[0131] The position in Table 1 represents the position of the cutting line 200 in the silicon rod, the negative number represents that the cutting line 200 has not cut into the silicon rod, and the table speed represents the speed of the workbench descending.

[0132] The wire speed is the speed of the guide roller driving the cutting line 200 to move, the wire length represents the length of the cutting line 200 in the wire process, and the wire length represents the length of the cutting line 200 in the wire process.

[0133] Two end tension is the tension of two ends of the cutting line segment, for example, 4.0 / 4.0 is that the left end tension of the cutting line segment is 4.0 Newton, and the right end tension is 4.0 Newton, the flow is the flow of liquid in the slicer, and the temperature refers to the temperature in the slicer.

[0134] In this embodiment, during the first cutting cycle of the cutting line 200, the depth of cutting into the silicon rod is ensured to be 0.8-1.0 mm.

[0135] Step five, cutting.

[0136] Table 1

[0137]

[0138] Add 270-350 liters of pure water and 1.5-3.0 liters of cooling liquid to the large cylinder of the slicer, and start cutting after the machine is heated.

[0139] After slicing, degreasing, inserting, cleaning and sorting, the thickness and TTV value of each silicon wafer are detected and recorded.

[0140] In this embodiment, the normal range of the average TTV value is 9-14 microns, the average TTV value is greater than 14 microns, the number of misaligned slots is increased, the TTV value is less than 9 microns, and the number of misaligned slots is reduced.

[0141] As shown in Table 2, the thickness data of Example 1 cut according to the wiring mode and cutting program of the embodiment of the application and Comparative Example 1 without misaligned slots, tool setting and depth of wire setting.

[0142] Table 2

[0143]

[0144] In this embodiment, cutting according to the wiring mode and cutting program of the embodiment of the application can effectively reduce the average TTV value, improve the thickness and uniformity of TTV of large-size silicon wafers, and improve the finished product quality and cutting yield of large-size silicon wafers.

[0145] The cutting equipment for large-size silicon wafers provided in the embodiment of the application is described below, and the cutting equipment for large-size silicon wafers described below can cut silicon rods by using the cutting method for large-size silicon wafers described above to obtain large-size silicon wafers.

[0146] The cutting equipment for large-size silicon wafers provided in the embodiment of the application comprises:

[0147] The guide roller assembly comprises three guide rollers arranged in a triangular shape, and the axial directions of the three guide rollers are parallel;

[0148] The cutting line 200 is arranged along the circumference of the guide roller assembly to form a plurality of cutting line segments, and the plurality of cutting line segments are arranged along the axial direction of the guide roller assembly to form a cutting line net 210.

[0149] A workbench is arranged for placing the silicon block to be cut;

[0150] A driving mechanism is connected with the guide roller assembly and the cutting line 200, and is used to drive the cutting line 200 to make periodic reciprocating motion along the circumference of the guide roller assembly.

[0151] A controller is connected with the workbench and the driving mechanism, and is used for the cutting method of the large-size silicon wafer to control the workbench and the driving mechanism to cut the silicon rod to obtain the large-size silicon wafer.

[0152] According to the cutting device for the large-size silicon wafer provided by the embodiment of the present application, the depth of the cutting line 200 in the wire feeding process in the first cutting cycle is controlled to cut into the silicon rod to reach the target depth, so that the influence of the shaking of the cutting line 200 on the thickness and the uniformity of the TTV of the large-size silicon wafer in the cutting process is prevented, and the finished product quality and the cutting yield of the large-size silicon wafer are improved.

[0153] In some embodiments, a wire groove is arranged along the circumference of the guide roller, a plurality of wire grooves are arranged along the circumference of the guide roller, the wire groove is used to accommodate the cutting line segment, and the plurality of wire grooves of the guide roller correspond to the plurality of cutting line segments one by one.

[0154] In some embodiments, the distance between the adjacent two wire grooves is 0.20-0.22 mm, and the wire diameter of the cutting line 200 is 0.035-0.040 mm.

[0155] In some embodiments, the wire grooves of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner.

[0156] In some embodiments, the staggered two wire grooves are staggered by a distance of 0.5-1 mm, and the number of the wire grooves arranged in a staggered manner on the same guide roller is 2-5.

[0157] The embodiment of the present application also provides a large-size silicon wafer, which is cut by the cutting method of the large-size silicon wafer.

[0158] The cutting device for the large-size silicon wafer provided by the embodiment of the present application is described below, and the cutting device for the large-size silicon wafer described below can be correspondingly referred to the cutting method of the large-size silicon wafer described above.

[0159] As shown in Figure 5 The cutting device for the large-size silicon wafer provided by the embodiment of the present application comprises:

[0160] The first processing module 510 is configured to control the silicon rod to be cut to move to a cutting zero point position of the cutting wire net, the cutting wire net includes a plurality of cutting wire segments formed by the cutting wires arranged along the circumferential direction of the guide roller assembly, the plurality of cutting wire segments are arranged along the axial direction of the guide roller assembly, and the guide roller assembly includes three guide rollers arranged in a triangular shape, and the axial directions of the three guide rollers are parallel;

[0161] The second processing module 520 is configured to control the silicon rod to move to the cutting wire net, and control the cutting wire to cut the silicon rod by performing periodic reciprocating motion along the circumferential direction of the guide roller assembly to obtain a plurality of large-size silicon wafers.

[0162] In some embodiments, the depth of the cutting wire into the silicon rod in the wire feeding process of the first cutting cycle is a target depth, the first rotation direction of the cutting wire along the circumferential direction of the guide roller assembly corresponds to the wire feeding process, the second rotation direction of the cutting wire along the circumferential direction of the guide roller assembly corresponds to the wire returning process, the first rotation direction and the second rotation direction are opposite, and each cutting cycle includes the wire feeding process and the wire returning process.

[0163] In some embodiments, the target depth is 0.8 mm-1.0 mm.

[0164] In some embodiments, the cutting zero point position is a position at a target distance from the cutting wire net.

[0165] In some embodiments, the target distance is 0.2 mm-0.4 mm.

[0166] In some embodiments, the first processing module 510 is configured to control the silicon rod to move to a position at a first distance from the cutting wire net at a first speed, and the first distance is greater than the target distance.

[0167] The silicon rod is controlled to move to the cutting zero point position at a second speed, and the first speed is greater than the second speed.

[0168] In some embodiments, the first distance is 10 mm-20 mm.

[0169] Figure 6 An example of a schematic diagram of the physical structure of an electronic device is shown in FIG. 1. Figure 6As shown, the electronic device can include a processor 610, a communications interface 620, a memory 630, and a communications bus 640, wherein the processor 610, the communications interface 620, and the memory 630 complete mutual communication through the communications bus 640. The processor 610 can invoke a logical instruction in the memory 630 to execute a cutting method of a large-size silicon wafer, the method including: controlling a silicon rod to be cut to move to a cutting zero point position of a cutting wire net, the cutting wire net including a plurality of cutting wire segments formed by a cutting wire being arranged along a circumferential direction of a guide roller assembly around the guide roller assembly, the plurality of cutting wire segments being arranged along an axial direction of the guide roller assembly, the guide roller assembly including three guide rollers arranged in a triangular shape, axial directions of the three guide rollers being parallel;

[0170] controlling the silicon rod to move to the cutting wire net, and controlling the cutting wire to cut the silicon rod by performing a periodic reciprocating motion along the circumferential direction of the guide roller assembly, to obtain a plurality of large-size silicon wafers;

[0171] wherein a depth at which the cutting wire cuts into the silicon rod during a wire feeding process of a first cutting cycle is a target depth, a first rotating direction of the cutting wire along the circumferential direction of the guide roller assembly corresponds to the wire feeding process, a second rotating direction of the cutting wire along the circumferential direction of the guide roller assembly corresponds to a wire returning process, the first rotating direction and the second rotating direction are opposite, and each cutting cycle includes the wire feeding process and the wire returning process.

[0172] In addition, the logical instruction in the memory 630 described above can be implemented in the form of a software function unit and sold or used as an independent product, and can be stored in a computer-readable storage medium. Based on such understanding, the technical solutions of the present application essentially or parts that contribute to the prior art, or parts of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.

[0173] In another aspect, the present application also provides a computer program product, which comprises a computer program stored on a non-transitory computer-readable storage medium, the computer program comprising program instructions which, when executed by a computer, enable the computer to perform the cutting method of a large-size silicon wafer as provided by any of the above methods, the method comprising: controlling a silicon rod to be cut to move to a cutting zero point position of a cutting wire net, the cutting wire net comprising a plurality of cutting wire segments formed by winding cutting wires along a circumferential direction of a guide roller assembly, the plurality of cutting wire segments being arranged along an axial direction of the guide roller assembly, the guide roller assembly comprising three guide rollers arranged in a triangular shape, axial directions of the three guide rollers being parallel;

[0174] controlling the silicon rod to move towards the cutting wire net, and controlling the cutting wires to cut the silicon rod by performing periodic reciprocating motion along the circumferential direction of the guide roller assembly, to obtain a plurality of large-size silicon wafers;

[0175] wherein a depth of the cutting wires into the silicon rod during a wire feeding process of a first cutting cycle is a target depth, a first rotating direction of the cutting wires along the circumferential direction of the guide roller assembly corresponds to the wire feeding process, a second rotating direction of the cutting wires along the circumferential direction of the guide roller assembly corresponds to a wire returning process, the first rotating direction and the second rotating direction are opposite, and each cutting cycle comprises the wire feeding process and the wire returning process.

[0176] In another aspect, the present application also provides a non-transitory computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor to implement a cutting method of a large-size silicon wafer as provided by any of the above methods, the method comprising: controlling a silicon rod to be cut to move to a cutting zero point position of a cutting wire net, the cutting wire net comprising a plurality of cutting wire segments formed by winding cutting wires along a circumferential direction of a guide roller assembly, the plurality of cutting wire segments being arranged along an axial direction of the guide roller assembly, the guide roller assembly comprising three guide rollers arranged in a triangular shape, axial directions of the three guide rollers being parallel;

[0177] controlling the silicon rod to move towards the cutting wire net, and controlling the cutting wires to cut the silicon rod by performing periodic reciprocating motion along the circumferential direction of the guide roller assembly, to obtain a plurality of large-size silicon wafers;

[0178] wherein a depth of the cutting wires into the silicon rod during a wire feeding process of a first cutting cycle is a target depth, a first rotating direction of the cutting wires along the circumferential direction of the guide roller assembly corresponds to the wire feeding process, a second rotating direction of the cutting wires along the circumferential direction of the guide roller assembly corresponds to a wire returning process, the first rotating direction and the second rotating direction are opposite, and each cutting cycle comprises the wire feeding process and the wire returning process.

[0179] The device embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separate, and the components displayed as units can or can not be physical units, i.e., can be located in one place, or can be distributed to multiple network units. Part or all of the modules can be selected to achieve the purposes of the embodiments according to actual needs. Those skilled in the art can understand and implement without creative labor.

[0180] Through the description of the above embodiments, those skilled in the art can clearly understand that the embodiments can be realized by means of software and the necessary general hardware platform, and of course can also be realized by hardware. Based on such understanding, the above technical solutions can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, etc., and includes a number of instructions to make a computer device (which can be a personal computer, a server, or a network device, etc.) execute the methods described in each embodiment or some parts of the embodiments.

[0181] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for cutting large-size silicon wafers, characterized in that, include: The silicon rod to be cut is controlled to move to the zero point position of the cutting wire mesh. The cutting wire mesh includes multiple cutting line segments formed by cutting lines wound around the guide roller assembly along the circumference of the guide roller assembly. The multiple cutting line segments are arranged along the axial direction of the guide roller assembly. The guide roller assembly includes three guide rollers arranged in a triangle. The axial directions of the three guide rollers are parallel. The silicon rod is controlled to move toward the cutting wire mesh, and the cutting wire is controlled to perform a periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rod, thereby obtaining multiple large-size silicon wafers; In this process, the cutting wire cuts into the silicon rod to the target depth during the first cutting cycle. The cutting wire moves along the first rotation direction of the guide roller assembly in the circumferential direction, which corresponds to the cutting process. The cutting wire moves along the second rotation direction of the guide roller assembly in the circumferential direction, which corresponds to the return process. The first rotation direction and the second rotation direction are opposite. Each cutting cycle includes the cutting process and the return process. The target depth is 0.8 mm to 1.0 mm; A groove is provided along the circumference of the guide roller, and multiple grooves are arranged along the circumference of the guide roller. The grooves are used to accommodate the cutting segments, and the multiple grooves of the guide roller correspond one-to-one with the multiple cutting segments. The grooves of the two guide rollers corresponding to the cutting line segment are staggered; The zero-point position of the cutting is the position at a distance from the target of the cutting wire mesh; The target distance is 0.2 mm to 0.4 mm; The control of moving the silicon rod to be cut to the cutting zero point position of the cutting wire mesh includes: The silicon rod is controlled to move at a first speed to a position a first distance away from the cutting wire mesh, the first distance being greater than the target distance; The silicon rod is controlled to move to the cutting zero point position at a second speed, wherein the first speed is greater than the second speed; The first distance is 10 mm to 20 mm; The spacing between two adjacent grooves is 0.20 mm to 0.22 mm, and the diameter of the cutting wire is 0.035 mm to 0.040 mm. The distance between the two staggered grooves is 0.5 mm to 1 mm, and the number of staggered grooves on the same guide roller is 2 to 5.

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