Test structure and power device on-line testing apparatus

Abstract

This application relates to a test structure and an online testing device for power devices. The test structure includes: multiple parallel test branches, each test branch including a series resistor and a power device under test (DUT), wherein the DUT is connected in series with the series resistor located in the same test branch; and a power supply detection device connected to the test branches, used to apply a bias voltage to the DUT, causing the DUT to be in a blocking state, and to monitor the current in the main circuit in real time. Using this test structure can improve testing efficiency.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a test structure and an online single-event effect test device for power devices. Background Technology

[0002] With the development of semiconductor technology, semiconductor power device technology has emerged and is widely used in aerospace, aviation, and ground applications. However, semiconductor power devices can be affected by harsh radiation environments in these applications. In aerospace applications, the main radiation environment is heavy ions and protons; in aviation and ground applications, the main radiation environment is atmospheric neutrons. When a single high-energy radiation particle enters a power device, it may cause malfunction or failure, a phenomenon known as single-event effect. For power devices, common single-event failure modes are single-event burnout (SEB) and single-event gate breakdown (SEGR), both of which are destructive failures that cause permanent damage to the device, posing a significant threat. To ensure the safe and reliable operation of power devices in radiation environments, their radiation sensitivity needs to be assessed.

[0003] Currently, the assessment of the radiation sensitivity of power devices is based on accelerated irradiation tests using ground-based simulated radiation sources. The single-event burn-out detection methods and test circuits designed for these tests are all designed for a single power device and can only detect multiple occurrences of the single-event burn-out effect of a single power device.

[0004] However, since testing can only be repeated on a single power device, the efficiency of irradiation testing for large-scale samples is very low. Summary of the Invention

[0005] Therefore, it is necessary to provide a test structure and online power device that can improve test efficiency to address the above-mentioned technical problems.

[0006] Firstly, this application provides a test structure. The test structure includes:

[0007] Multiple test branches connected in parallel, each of which includes the power device under test;

[0008] A power supply detection device, connected to the test branch, is used to apply a bias voltage to the power device under test, so that the power device under test is in a blocking state, and to monitor the current in the main circuit in real time.

[0009] In one embodiment, the power supply detection device includes a high-voltage source meter; the power device under test includes a metal-oxide-semiconductor field-effect transistor (MOSFET), the drain of the MOSFET is connected to the power supply detection device, and the gate and source of the MOSFET are both grounded; or the power device under test includes a diode, the anode of the diode is grounded, and the cathode of the diode is connected to the power supply detection device.

[0010] In one embodiment, each of the test branches further includes: a series resistor connected in series with the power device under test located in the same test branch; and a capacitor connected in parallel with the power device under test.

[0011] In one embodiment, the test structure further includes a transient current sampling circuit, which is disposed on the main circuit for real-time monitoring of transient current signals in the main circuit.

[0012] In one embodiment, the transient current sampling circuit includes: a first sampling resistor located on the main circuit; and an oscilloscope connected in parallel with the first sampling resistor.

[0013] In one embodiment, the equivalent resistance of the power device under test in the blocking state is much larger than the resistance of the series resistor.

[0014] In one embodiment, each of the test branches further includes: a second sampling resistor, through which the power device under test is grounded; an operational amplifier sampling circuit, one end of which is connected between the second sampling resistor and the power device under test, for acquiring the voltage at the connection point between the operational amplifier sampling circuit, the second sampling resistor, and the power device under test; the test structure further includes a processor and a host computer, the processor being connected to the operational amplifier sampling circuit in each of the test branches, for determining whether the voltage acquired by each operational amplifier sampling circuit is abnormal; the host computer is connected to the processor.

[0015] In one embodiment, the operational amplifier sampling circuit includes: an operational amplifier, including a positive input terminal, a negative input terminal, a voltage input terminal, a ground terminal, and an output terminal, wherein the voltage input terminal of the operational amplifier is connected to a power supply voltage, and the output terminal of the operational amplifier is grounded; a third sampling resistor, one end of which is connected between the second sampling resistor and the power device under test, and the other end of which is connected to the positive input terminal of the operational amplifier; an impedance, one end of which is connected to the positive input terminal of the operational amplifier, and the other end of which is grounded; a fourth sampling resistor, one end of which, together with the output terminal of the operational amplifier, serves as the output terminal of the operational amplifier sampling circuit and is connected to the processor, and the other end of which is connected to the negative input terminal of the operational amplifier; and a fifth sampling resistor, one end of which is connected to both the fourth sampling resistor and the negative input terminal of the operational amplifier, and the other end of which is grounded.

[0016] In one embodiment, the test branch further includes: a switch connected in series with the power device under test located on the same test branch; a capacitor connected in parallel with the power device under test; an electrical parameter monitoring module, one end of which is connected to the end of the power device under test away from the switch; the test structure further includes a processor and a host computer, the processor being connected to the electrical parameter monitoring module in each of the test branches; and the host computer being connected to the processor.

[0017] Secondly, this application also provides an online testing device for power devices. The device includes:

[0018] The test structure as described in any one of the first aspects;

[0019] A clamp, located in each of the test branches, is used to hold the power device under test;

[0020] A radiation source is used to provide radiation particles while simultaneously supplying power to the devices under test.

[0021] The aforementioned test structure and online power device device can simultaneously connect multiple power devices under test in parallel to form test branches in the test structure. By applying a bias voltage to the power devices under test to keep them in a blocking state, online testing of the power devices is achieved by monitoring the current in the main circuit, thereby improving the efficiency of online power device testing. Attached Figure Description

[0022] Figure 1 This is a structural block diagram of a test structure in one embodiment;

[0023] Figure 2 This is a schematic diagram of the test branch in one embodiment where the power device under test is an NMOS transistor;

[0024] Figure 3 This is a schematic diagram of the test branch in one embodiment where the power device under test is a diode;

[0025] Figure 4 This is a schematic diagram of the test structure in another embodiment;

[0026] Figure 5 One embodiment is an online testing device for power devices;

[0027] Figure 6 One embodiment is an online testing method for power devices;

[0028] Figure 7 This is a schematic diagram of the test structure in yet another embodiment. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0031] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0032] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0033] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0034] Regarding radiation-induced device damage, memory devices also exhibit single-event effects (SEE). Testing methods for SEE in memory devices involve statistically analyzing the number of SEE events occurring under irradiation conditions, and then classifying and analyzing each SEE to infer the sensitive locations of SEE events. Alternatively, data before and after irradiation can be compared and analyzed. However, SEE in memory devices primarily results in soft errors and does not cause permanent damage. In contrast, SEE in power devices causes destructive damage, leading to permanent failure. Therefore, power devices differ significantly from memory devices in terms of failure modes and effect testing methods, and existing technologies for memory devices are not applicable to power devices.

[0035] Existing single-event effect (SEE) tests for power devices incorporate additional protection circuits to prevent actual burn-out and destructive failure. Since the power device under test (DUT) does not experience actual destructive failure, these external protection circuits may interfere with the generation of SEE results, potentially leading to misinterpretations. Therefore, this application provides a test structure and an online power device apparatus that improves the efficiency of online power device testing. Furthermore, by adding an operational amplifier sampling circuit for voltage sampling, the online test results are made more accurate.

[0036] This application provides a test structure, the structure of which can be as follows: Figure 1 As shown, it includes multiple parallel test branches: test branch 101, test branch 102, test branch 103... (test branches 104 to 100(n-1) are omitted here) and test branch 10n; wherein, each of the test branches includes the power device under test (e.g., Figure 1 The device under test (DUT) includes devices 1012, 1022, ..., 10n2; and a power supply detection device 11, which is connected to the multiple parallel test branches and is used to apply a bias voltage to the DUT, so that the DUT is in a blocking state, and to monitor the current in the main circuit in real time.

[0037] In one embodiment, the power supply detection device 11 includes a high-voltage source meter.

[0038] In one embodiment, the power device under test (e.g.) Figure 1 The power devices under test (DUTs) 1012, 1022, ..., 10n2 in the text can be metal-oxide-semiconductor field-effect transistors (MOSFETs) (N-type metal-oxide-semiconductor (NMOS) transistors are used as an example here). DUT 1012 is used as an example for illustration. Please refer to... Figure 2 , Figure 2 This is a schematic diagram of the test branch structure in one embodiment where the power device under test is an NMOS transistor, and Figure 2 The NMOS transistor in the device includes a source 201, a drain 202, and a gate 203. The drain of the NMOS transistor is connected to the power supply detection device 11, and both the gate and source of the NMOS transistor are grounded.

[0039] In yet another embodiment, the power device under test (e.g.) Figure 1 The power under test (DUT) devices 1012, 1022, ..., 10n2 in the diagram can be diodes; DUT 1012 is used as an example here. Please refer to [link to documentation]. Figure 3 , Figure 3 This is a schematic diagram of the test branch where the power device under test is a diode, as shown in one embodiment. Figure 3 The diode includes an anode 301 and a cathode 302. The anode of the diode is grounded, and the cathode of the diode is connected to the power supply detection device.

[0040] In addition, the power devices under test mentioned above also include insulated gate bipolar transistors (IGBTs), thyristors, or bipolar transistors.

[0041] In one embodiment, such as Figure 1 , Figure 2 as well as Figure 3 As shown, each of the test branches also includes: a series resistor (such as...) Figure 1The series resistors 1011, 1021, ..., 10n1 are connected in series with the power device under test (DUT) located in the same test branch (for example, test branch 101 includes series resistor 1011 and DUT 1012, and series resistor 1021 and DUT 1021 are connected in series; test branch 102 includes series resistor 1021 and DUT 1022, and series resistor 1021 and DUT 1022 are connected in series; the remaining test branches follow the same test procedure). The connection relationship between branch 101 and test branch 102 will not be described here; the above test branch also includes capacitors (the capacitors of different test branches are marked as capacitor 1013, capacitor 1023, capacitor 1033... and capacitor 10n3 respectively), the above capacitors are connected in parallel with the corresponding power devices under test (the power devices under test of different test branches are marked as power devices under test 1012, power devices under test 1022, power devices under test 1032... and power devices under test 10n2 respectively), and can promote the occurrence of single-particle burn-off of the device under test.

[0042] In one embodiment, such as Figure 1 The aforementioned test structure further includes a transient current sampling circuit 12, which is disposed on the main circuit and is used to monitor transient current signals in the main circuit.

[0043] Specifically, the transient current sampling circuit 12 includes a first sampling resistor 1201 and an oscilloscope 1202. The first sampling resistor 1201 and the oscilloscope 1202 are connected in parallel and are both set in the main circuit of the above-mentioned test structure. The current sampling circuit 12 records the current pulse waveform of the device under test at the moment of single-event failure through the oscilloscope 13, thereby monitoring the transient current signal in the main circuit in real time.

[0044] In one embodiment, Figure 1 , Figure 2 as well as Figure 3 The equivalent resistance of the power device under test in the blocking state is much greater than the resistance of the series resistor.

[0045] In one embodiment, see Figure 4 , Figure 4 This is a schematic diagram of the test structure in another embodiment, which is applied to... Figure 1 In the test structure, and in the schematic diagram of this structure, 401 can be replaced. Figure 1 The test branches are 101, 102, 103... and 10n. Here, we will take test branch 101 as an example for detailed explanation. Figure 4As shown, the test branch also includes: a second sampling resistor 402, the power device under test 1011 is connected in series with the second sampling resistor 402 and then grounded; one end of the operational amplifier sampling circuit 403 is connected between the second sampling resistor and the power device under test, and is used to collect the voltage at the connection point 404 between the operational amplifier sampling circuit, the second sampling resistor and the power device under test; the test structure also includes a processor 13 and a host computer 14, the processor 13 is connected to the operational amplifier sampling circuit in each of the test branches, and is used to determine whether the voltage collected by each operational amplifier sampling circuit is abnormal; the host computer is connected to the processor.

[0046] In one embodiment, such as Figure 4 As shown, the above-mentioned operational amplifier sampling circuit 403 includes: an operational amplifier 4031, including a positive input terminal, a negative input terminal, a voltage input terminal, a ground terminal, and an output terminal. The voltage input terminal of the operational amplifier 4031 is connected to the power supply voltage, and the output terminal of the operational amplifier 4031 is grounded; a third sampling resistor 5032, one end of which is connected between the second sampling resistor 402 and the power device under test, and the other end of which is connected to the positive input terminal of the operational amplifier 4031; an impedance 4033, one end of which is connected to the positive input terminal of the operational amplifier, and the other end of which is grounded; a fourth sampling resistor 4034, one end of which, together with the output terminal of the operational amplifier, serves as the output terminal of the operational amplifier sampling circuit and is connected to the processor, and the other end of which is connected to the negative input terminal of the operational amplifier 5031; and a fifth sampling resistor 4035, one end of which is connected to both the fourth sampling resistor 4034 and the negative input terminal of the operational amplifier 4031, and the other end of which is grounded.

[0047] Based on the same inventive concept, this application also provides an online testing device for power devices using the test structure described above. The specific limitations of one or more online testing device embodiments for power devices provided below can be found in the limitations of the test structure above, and will not be repeated here.

[0048] In one embodiment, such as Figure 5 As shown, an online testing device for power devices is provided. The online testing device 002 for power devices includes:

[0049] The test structure as described in any one of the first aspects;

[0050] The clamp 501 is located in each of the test branches in the test structure and is used to clamp the power device under test;

[0051] Radiation source 502 is used to provide radiation particles while simultaneously radiating the power devices under test.

[0052] Since single-event events are probabilistic, to obtain high-confidence test results, it may be necessary to observe multiple (e.g., fifteen) single-event events throughout the test. Furthermore, single-event failures in power devices are destructive failures, and in existing technologies, each single-event event means irradiation of one device, leading to low test efficiency and wasted time resources due to the high cost of irradiation testing equipment. Therefore, the test structure and online power device testing apparatus proposed in this application can simultaneously perform online testing on multiple devices under test. The online power device testing method provided in this application can be applied to applications such as... Figure 1 and Figure 4 The test structure shown and as follows Figure 5 The power device is tested in an online testing device as shown.

[0053] In one embodiment, such as Figure 6 As shown, an online testing method for power devices is provided, which can be applied to devices such as... Figure 1 and Figure 4 The test structure shown and as follows Figure 6 The following steps are used as an example to illustrate the process:

[0054] Step 601: Use a fixture to mount the power device under test onto the power device online testing device.

[0055] Specifically, see Figure 1 and Figure 5 The clamp 501 is used to clamp two or more devices under test on the online testing device at the same time, so that the two or more devices under test are respectively connected to the corresponding series resistors, and the position of the devices under test is adjusted to ensure that the radiation source particles (protons, neutrons and heavy ions, etc.) can cover all the devices under test, thereby fixing them in the test branch of the test structure.

[0056] Step 602: Apply a bias voltage to the power device under test to put the power device under test into a blocking state.

[0057] The power devices under test mentioned above can include MOSFETs (NMOS transistors are used as an example here), diodes, IGBTs, thyristors, or bipolar transistors.

[0058] like Figure 2 as well as Figure 3The connection method of the device under test (DUT) is as follows: the drain of the NMOS transistor is connected to the power supply detection device 11, and both the gate and source of the NMOS transistor are grounded; or, the anode of the diode is grounded, and the cathode of the diode is connected to the power supply detection device, and a bias voltage is applied to the power DUT. Under the above bias conditions, the DUT will be in a blocking state, and the equivalent resistance value of the power DUT in the blocking state is much larger than the resistance value of the series resistor.

[0059] Step 603: Irradiate the power device under test and monitor the changes in its electrical parameters.

[0060] In one embodiment, such as Figure 1 The test structure shown and as follows Figure 5 The online testing device for the power device shown is connected, and irradiation is turned on to the power device under test, and the electrical parameters of the power device under test are detected.

[0061] Specifically, such as Figure 1 As shown, n power devices under test (DUTs) are connected in parallel. A power supply detection device 11 simultaneously powers all devices, while the device monitors the total current change in the main circuit in real time. An oscilloscope 1202 records the current pulse waveform at the moment a single-event failure occurs in the DUT. When a bias voltage is applied to the DUT, since the equivalent resistance of the DUT is much greater than the corresponding series resistance, the voltage across all the DUTs is the voltage of the power supply detection device 11. Furthermore, the total current in the main circuit monitored by the power supply detection device 11 at this time is negligible (because all test branches are in the off state).

[0062] When the aforementioned device under test (DUT) fails due to single-event burn-out, it loses its blocking capability and exhibits low-resistance characteristics (the equivalent resistance of the DUT in the aforementioned test branch can be ignored). At this time, the current in the failed test branch 10n is:

[0063]

[0064] Wherein, V d For the above power devices at the bias voltage, R n The resistance value is the series resistor in the test branch 10n where the failure occurred.

[0065] Since the current in the test branch that did not fail is negligible, the sum of the currents in the failed test branch 10n is the total current in the main circuit monitored by the power supply detection device 11. After the device under test experiences a single-event failure, the original value of the total current in the main circuit monitored by the power supply detection device 11 increases by I. n, a current rising step appears. During the entire irradiation process, the number of rising steps in the main circuit current is counted and recorded as parameter r, and the parameter r is the number of single-event failures that occur.

[0066] Since based on Figure 1 The on-line test device for power devices shown can test and obtain the total number of power devices that fail during the entire irradiation process, which is equivalent to the number of single-event failures mentioned above. However, when parameter r < n, it is impossible to distinguish which specific devices have failed and which have not. Therefore, Figure 1 The test structure shown in Figure 4 is improved by replacing 401 in Figure 1 with test branch 1011, test branch 1021, test branch 1031... and test branch 10n1 in

[0067] In another embodiment, as Figure 1 and Figure 4 shown in the test structure and as Figure 5 shown in the on-line test device for power devices, a small-value second sampling resistor 402 and an operational amplifier sampling circuit 403 are added between the connection point 404 and the ground, and the voltage value at the connection point 404 is sampled by the high-precision operational amplifier sampling circuit 403, and the voltage value at the connection point 404 is fed back to the processor 13. The processor 13 can be a single-chip microcomputer and a field programmable gate array (Field Programmable Gate Array, FPGA). R n1 <<R n (where R n1 is the resistance value of the second sampling resistor of test branch 10n, and R n is the equivalent resistance value of the device under test 10n1 in test branch 10n). When the above-mentioned device under test power device does not fail, the voltage at the connection point is 0V; when the above-mentioned device under test power device fails, the voltage detected at the connection point of test branch 10n satisfies the following formula:

[0068]

[0069] In the formula, V d is the bias voltage of the above-mentioned power device, R n1 is the resistance value of the second sampling resistor of test branch 10n, and R n is the equivalent resistance value of the device under test 10n1 in test branch 10n. Step 604, judge the failure situation of the device under test power device according to the change of the above electrical parameters.

[0070] On the one hand, as Figure 1 ​ Figure 5 The online testing apparatus for the power device shown, after the irradiation test is completed, records the amount of incident radiation particles injected during the entire irradiation test as m. The power device under bias voltage V is calculated using the following formula. d The single-event effect cross section σ is:

[0071]

[0072] In the formula, the single-event effect cross section σ reflects the radiation sensitivity of the power device under test, r is the number of single-event failures during the entire irradiation process, and m is the amount of incident radiation particles injected during the entire irradiation process.

[0073] On the other hand, such as Figure 1 and Figure 4 The test structure shown and as follows Figure 5 The online testing device for power devices shown in the figure can automatically identify the power device under test corresponding to the connection point 404 based on the voltage value output from the connection point. The identified power device under test is regarded as a failed power device, and the result of the judgment of the failed power device is fed back to the host computer 14.

[0074] However, for ultra-high voltage power devices, their turn-off current is large, reaching the milliampere level. This means that the equivalent resistance of the power device in the off-state is in the megaohm range and cannot be considered infinite. When testing using the above scheme, the resistance value of the series resistor in the branch is equivalent to the equivalent resistance value of the device under test (DUT) when turned off, thus generating a large voltage drop across the series resistor. At this time, the actual voltage across the DUT will be much smaller than the voltage of the power supply detection device 11. To overcome the above problem, the following solution is proposed, using the DUT 1011 as an example for illustration; other DUTs follow similar rules. Please refer to... Figure 7 , Figure 7 This is a schematic diagram of the test structure in another embodiment. The schematic diagram includes a test branch 701, which includes a switch 702, an electrical parameter monitoring module 703, a capacitor 1013, a device under test (DUT) 1011, and a connection point 404. Figure 7 The switch in the middle can be a relay, a programmable switch, etc.

[0075] When switch 702 is closed, the device under test (DUT) 1011 is connected to the power supply detection device 11. When the electrical parameter monitoring module 703 detects an abnormal electrical parameter (corresponding to a failure of DUT 1011), it sends a signal to the processor 13, which then controls switch 702 to open. When DUT 1011 is not failing, switch 702 is in the closed state, and its equivalent resistance is approximately zero. Although the leakage current of DUT 1011 is large in the blocking state, its voltage drop is negligible. When DUT 1011 fails, the switch is in the open state, and the connection between the failed DUT 1011 and the power supply detection device 11 is interrupted. Figure 7 The electrical parameter monitoring module 703 can be implemented using an operational amplifier sampling circuit 403, or it can be implemented using other methods such as a current sensor. Using a current sensor allows for physical isolation between the high-voltage source and the electrical parameter monitoring module 703, ensuring the safety of both the electrical parameter monitoring module 703 and the processor 13. Figure 7 The test structure shown can determine the failure status of the device under test based on the closing and opening of switch 702.

[0076] As can be seen, the above-mentioned online testing method for power devices can not only detect the total number of failures of the power devices under test, but also identify the failed power devices under test based on the voltage sampling results by adding an operational amplifier sampling circuit, thereby reducing the probability of misjudgment of test results.

[0077] In the above-mentioned online power device testing method, multiple power devices under test can be connected in parallel to form a test branch in the test structure. By applying a bias voltage to the power devices under test, the power devices under test are in a blocking state. Online testing of power devices is achieved by monitoring the current in the main circuit, which improves the efficiency of online power device testing.

[0078] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0079] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0080] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. An online testing device for power devices, characterized in that, include: The test structure includes multiple parallel test branches and a power supply detection device. Each test branch includes a power device under test. The power supply detection device is connected to the test branch and is used to apply a bias voltage to the power device under test, so that the power device under test is in a blocking state, and to monitor the current in the main circuit in real time. A clamp, located in each of the test branches, is used to hold the power device under test; A radiation source, used to provide radiation particles to simultaneously irradiate each of the power devices under test; After a single-event failure occurs in the power device under test, the original value of the total current in the main circuit monitored by the power supply detection device increases, resulting in a current rise step. During the entire irradiation process, the number of steps in the main circuit current is denoted as parameter r, where parameter r is the number of single-event failures; the single-event effect cross section σ of the power device under test under bias voltage is r / m, where m is the amount of incident radiation particles injected during the entire irradiation process.

2. The apparatus according to claim 1, characterized in that, The power supply detection device includes a high-voltage source meter; the power device under test includes a metal-oxide-semiconductor field-effect transistor, the drain of the metal-oxide-semiconductor field-effect transistor is connected to the power supply detection device, and the gate and source of the metal-oxide-semiconductor field-effect transistor are both grounded; or the power device under test includes a diode, the anode of the diode is grounded, and the cathode of the diode is connected to the power supply detection device.

3. The apparatus according to claim 1, characterized in that, Each of the aforementioned test branches also includes: A series resistor, wherein the series resistor is connected in series with the power device under test located in the same test branch; A capacitor, which is connected in parallel with the power device under test.

4. The apparatus according to claim 1, characterized in that, It also includes a transient current sampling circuit, which is set on the main circuit to monitor the transient current signal in the main circuit in real time.

5. The apparatus according to claim 4, characterized in that, The transient current sampling circuit includes: The first sampling resistor is located on the main circuit; An oscilloscope is connected in parallel with the first sampling resistor.

6. The apparatus according to claim 3, characterized in that, The equivalent resistance of the power device under test in the blocked state is much greater than the resistance of the series resistor.

7. The apparatus according to any one of claims 1 to 6, characterized in that, Each of the test branches further includes: a second sampling resistor, through which the power device under test is grounded; and an operational amplifier sampling circuit, one end of which is connected between the second sampling resistor and the power device under test, for collecting the voltage at the connection point between the operational amplifier sampling circuit, the second sampling resistor, and the power device under test. The test structure also includes a processor and a host computer. The processor is connected to the operational amplifier sampling circuit in each of the test branches and is used to determine whether the voltage collected by each operational amplifier sampling circuit is abnormal. The host computer is connected to the processor.

8. The apparatus according to claim 7, characterized in that, The operational amplifier sampling circuit includes: An operational amplifier includes a positive input terminal, a negative input terminal, a voltage input terminal, a ground terminal, and an output terminal. The voltage input terminal of the operational amplifier is connected to a power supply voltage, and the output terminal of the operational amplifier is grounded. The third sampling resistor has one end connected between the second sampling resistor and the power device under test, and the other end connected to the positive input terminal of the operational amplifier; The impedance is connected at one end to the positive input terminal of the operational amplifier and at the other end to ground. The fourth sampling resistor has one end connected to the processor as the output of the operational amplifier sampling circuit, together with the output of the operational amplifier; the other end is connected to the negative input of the operational amplifier. The fifth sampling resistor has one end connected to both the fourth sampling resistor and the negative input terminal of the operational amplifier, and the other end grounded.

9. The apparatus according to claim 1, characterized in that, The test branch further includes: a switch connected in series with the power device under test located on the same test branch; a capacitor connected in parallel with the power device under test; and an electrical parameter monitoring module, one end of which is connected to the end of the power device under test away from the switch. The test structure also includes a processor and a host computer. The processor is connected to the electrical parameter monitoring module in each of the test branches; the host computer is connected to the processor.

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