A semiconductor light emitting element

Abstract

A semiconductor light emitting element includes a semiconductor light emitting sequence including a first type conductive semiconductor layer, a second type conductive semiconductor layer, and a light emitting layer between the two layers in a thickness direction; a plurality of finger electrodes on one side of the semiconductor light emitting sequence in the thickness direction; and a plurality of ohmic contact regions on the side opposite to the semiconductor light emitting sequence from the finger electrodes, the plurality of ohmic contact regions being arranged in a plurality of columns in a direction in which the finger electrodes extend between every two adjacent finger electrodes, wherein a distance between an arbitrary ohmic contact region (A) of a first column closest to the finger electrodes and an ohmic contact region (B) of the same column is greater than a distance between the arbitrary ohmic contact region (A) and an adjacent ohmic contact region (C) of a second column closest to the finger electrodes, and the plurality of ohmic contact regions of the adjacent two columns are arranged in a staggered manner in a direction perpendicular to the finger electrodes.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor light emitting element. BACKGROUND

[0002] LED light emitting diode includes a first type of conductive semiconductor layer (N-type doping), light emitting layer and a second type of conductive semiconductor layer (P-type doping). How to carry out the current spreading between the first type of conductive semiconductor layer and the second type of conductive semiconductor layer is a key factor affecting the internal quantum efficiency. The current spreading and transmission efficiency are mainly improved by the current spreading electrode arranged laterally on the side of the main current injection electrode to increase the injection current area and improve the uniformity of the injection current, or by arranging the electrode between the semiconductor sequence through the insulating layer and arranging multiple ohmic contact regions of the electrode on the insulating layer. SUMMARY

[0003] The present application provides a semiconductor light emitting element, which includes a semiconductor light emitting sequence, the semiconductor light emitting sequence includes a first type of conductive semiconductor layer, a second type of conductive semiconductor layer and a light emitting layer between the two along the thickness direction; a plurality of finger electrodes located on one side of the semiconductor light emitting sequence in the thickness direction; a plurality of ohmic contact regions located on the side opposite to the semiconductor light emitting sequence with the plurality of finger electrodes, characterized in that: from the side of the semiconductor light emitting sequence where the plurality of finger electrodes are located, the plurality of ohmic contact regions between every two adjacent finger electrodes are arranged into multiple columns along the direction in which the finger electrodes extend, wherein the distance between any one ohmic contact region (A) of the first column closest to a finger electrode and an adjacent ohmic contact region (B) in the same column is greater than the distance between the any one ohmic contact region (A) and an adjacent ohmic contact region (C) in the second column close to the finger electrode, and the plurality of ohmic contact regions of the adjacent two columns are staggered in the direction perpendicular to the finger electrodes.

[0004] More preferably, the plurality of finger electrodes are mainly parallel to each other, and more preferably, along the part where the plurality of finger electrodes extend parallel to each other, the plurality of ohmic contact regions are arranged into multiple columns along the extension direction.

[0005] More preferably, the plurality of contact regions are arranged in an array.

[0006] More preferably, there are four equidistant ohmic contact regions around any one ohmic contact region in a column that is not closest to the finger electrode.

[0007] More preferably, the four equidistant ohmic contact regions form a right square structure.

[0008] More preferably, the multiple contact regions are arranged in a manner that there are six ohmic contact regions equidistantly around one contact region.

[0009] More preferably, as viewed along the direction perpendicular to the extension direction of the finger-shaped electrodes, the adjacent one ohmic contact region (C) of the second column is located between the adjacent two second ohmic contact regions (A) and (B) of the column closest to the finger-shaped electrodes.

[0010] More preferably, the distance between any one ohmic contact region (A) and the adjacent one ohmic contact region (C) of the adjacent column is greater than or equal to twice the distance between the adjacent two columns.

[0011] More preferably, as viewed along the direction of the thickness of the semiconductor light-emitting sequence, the multiple finger-shaped electrodes do not overlap with the multiple ohmic contact regions.

[0012] More preferably, the distance between any one contact region and the adjacent finger-shaped electrode is between 5% and 50% of the horizontal distance between the two adjacent finger-shaped electrodes, the horizontal distance being the horizontal distance obtained by viewing from one side of the semiconductor light-emitting sequence.

[0013] More preferably, the multiple contact regions between any two adjacent finger-shaped electrodes are arranged in multiple columns along the direction of the finger-shaped electrodes, and the distance between any two adjacent columns of the multiple columns is between 1 and 50 μm.

[0014] More preferably, each of the multiple ohmic contact regions has a size of 1-50 μm.

[0015] More preferably, the multiple ohmic contact regions account for 3-50% of the area of the side of the semiconductor light-emitting sequence.

[0016] More preferably, the main extension portions of each of the multiple finger-shaped electrodes are arranged in parallel to each other.

[0017] More preferably, the multiple finger-shaped electrodes include a same first electrode region, and the multiple finger-shaped electrodes extend from the first electrode region.

[0018] More preferably, the width of the multiple finger-shaped electrodes is 1-20 μm.

[0019] More preferably, an insulating layer is formed on the other side along the direction of the thickness of the semiconductor sequence, the insulating layer has multiple exposed regions exposing the other side along the direction of the thickness of the semiconductor light-emitting sequence, and the multiple exposed regions are the multiple ohmic contact regions.

[0020] More preferably, the insulating layer is magnesium fluoride or calcium fluoride or silicon oxide or silicon nitride.

[0021] More preferably, the plurality of exposed regions of the insulating layer are formed as a plurality of through-holes, and the plurality of through-holes have an opening size on the other side of the semiconductor light-emitting sequence in the thickness direction that is smaller than an opening size on the side away from the semiconductor light-emitting sequence.

[0022] More preferably, the side of the insulating layer away from the semiconductor light-emitting sequence has a conductive layer, and the conductive layer can include a mirror surface reflection layer.

[0023] By setting the distance between any one contact region of the column closest to the finger electrode in the extension direction and the contact region adjacent to the same column to be greater than the distance between the one contact region and the adjacent one contact region of the adjacent column, the lateral current spreading of the finger electrode along the two sides can be effectively improved. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 Structure obtained after the first ohmic contact layer is prepared on the semiconductor light-emitting sequence in the process method of Embodiment 1;

[0025] Figure 2 Structure obtained after the second ohmic contact layer is prepared after being transferred to a temporary substrate in the process method of Embodiment 1;

[0026] Figure 3 Structure obtained after the insulating layer, the transparent conductive layer, the reflection layer, and the bonding support substrate are made on the second ohmic contact layer in the process method of Embodiment 1;

[0027] Figure 4 Structure schematic diagram of the semiconductor light-emitting element obtained in Embodiment 1;

[0028] Figure 5 Schematic diagram of the top view structure of the side of the first ohmic contact layer of the semiconductor light-emitting element obtained in Embodiment 1;

[0029] Figure 6 Structure schematic diagram of the side of the second ohmic contact layer of the semiconductor light-emitting element obtained in Embodiment 1; Figure 5 Structure schematic diagram of the local enlargement in the dotted circle;

[0030] Figure 7 Structure obtained after the first ohmic contact layer is prepared on the semiconductor light-emitting sequence in the process method of Embodiment 2;

[0031] Figure 8 Structure obtained after the second ohmic contact layer is prepared after being transferred to a temporary substrate in the process method of Embodiment 2;

[0032] Figure 9 Structure schematic diagram of the semiconductor light-emitting element of Embodiment 2;

[0033] Figure 10 Schematic diagram of the top view structure of the side of the second ohmic contact layer of the semiconductor light-emitting element of Embodiment 2;

[0034] Figure 11 For Figure 10 a partial enlarged structure diagram in the dotted circle;

[0035] Figure 12 For

[0036] Figure 13 For

[0037] Figure 14 For Figure 13 a partial enlarged structure diagram in the dotted circle. DETAILED DESCRIPTION

[0038] Example 1

[0039] As Figures 1-6 shows a structure manufactured according to the manufacturing method of Example 1 of the present application. The method for manufacturing an optoelectronic device according to the present application comprises the following steps:

[0040] First, a semiconductor light emitting sequence is provided:

[0041] A growth substrate 101 is provided, such as a growth substrate for MOCVD growth of a semiconductor light emitting sequence, which includes but is not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), sapphire, silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AIN), glass, composite, diamond, CVD diamond, diamond-like carbon (DLC), etc.

[0042] A first window layer 101 is formed on the substrate containing at least one element from a group consisting of one material, selected from Al, Ga, In, As, P, N, such as GaN, AlGaInP or any other suitable material. The first window layer 111 is of the same conductive type layer as the material on the same side of the semiconductor light emitting sequence, such as N-type or p-type Al X Ga （1−X） InP, where 0≦X≦1h; or such as AlGaAs. The first window layer 111 has two opposite first surfaces, where the window layer of the first surface is closer to the substrate.

[0043] A transition layer can be optionally formed between the growth substrate and the first window layer, the transition layer can be a buffer system (not shown) of two material systems. The structure for a light emitting diode, a transition layer of two material systems for reducing lattice mismatch. In another aspect, the transition layer can also be a single layer, multiple layers, or a structure combining two materials or two separate transition structures, wherein the material layers can be organic, inorganic, metallic, semiconducting, etc., the structure can be a reflective layer, a thermally conductive layer, an electrically conductive layer, an ohmic contact layer, a deformation prevention layer; a stress release layer, a stress adjustment layer, a bonding layer, a wavelength conversion layer, a mechanical fixation structure, an etching stop layer, etc.

[0044] Next, a semiconductor light emitting sequence is formed on the window layer 101, including at least a first layer semiconductor layer 103 having a first conductivity type, a light emitting layer 104, and a second layer semiconductor layer 105 having a second conductivity type. The first layer semiconductor layer and the second layer semiconductor layer 105 are two single layer structures, or two multiple layer structures, "multiple layer" means two or more layers having different electrical conductivities, the first conductivity type and the second conductivity type respectively provide electrons or holes, and are doped with different dopants. If the first layer semiconductor layer 103 and the second layer semiconductor layer 105 are semiconductor materials, for example, Al X Ga （1−X） InP, wherein 0≦X≦1, or as AlGaAs; the first or second conductivity type can be P-type or N-type. As an embodiment, the first window layer 103 has the same conductivity type as the first layer semiconductor layer, such as N-type. In addition, the first window layer 101 can have a higher impurity concentration than the first layer semiconductor layer 103, thus having better electrical conductivity. Other non-semiconductor materials, such as metal, oxide layer, insulating layer, etc. can also be optionally formed on the surface of the semiconductor light emitting sequence.

[0045] The light emitting layer 104 is a series of commonly used materials such as aluminum gallium indium phosphide (AlGaInP), aluminum indium gallium nitride (AlInGaN) or aluminum gallium arsenide (AlGaAs) stacked to form, which is specifically a single heterojunction, double heterojunction structure or a multiple quantum well structure, including a MQW structure including a plurality of barrier layers and well layers alternately stacked; each barrier layer includes AlyGa(1−y)InP, wherein 0≦y≦1, and each of the well layers includes AlzGa(1−z)InP, wherein 0≦z≦1. In addition, the wavelength of the emitted light can also be adjusted by changing the number of quantum wells or the composition of the barrier layer, for example, red light with a main wavelength of 600~630nm, y is about 0.7 or amber between 580 and 600nm, y is about 0.55. The light emitting radiation provided by the light emitting layer 104 can be ultraviolet to green part of 200~550nm, or red, yellow, orange, amber or infrared light between 550~950nm.

[0046] A second window layer 106 is formed above the semiconductor light-emitting array. It can serve as a current spreading layer on the side of the second semiconductor layer 105. Its material contains at least one selected from the group consisting of Al, Ga, In, As, P, and N, such as GaN, AlGaInP, or any other suitable material. The second window layer 106 includes at least one material different from the material of the semiconductor light-emitting array. The second window layer is preferably of the same conductivity type as the second semiconductor layer, such as a p-type GaP layer. In one embodiment, the second window layer can be prepared using the same process as the semiconductor array, or it can be an integral part of the semiconductor light-emitting array.

[0047] Second, make the first ohmic contact layer on the second window:

[0048] Then, if Figure 1 As shown, a first ohmic contact layer 107 is formed of a conductive material such as a metal or a transparent inorganic oxide conductive material. The metal may be an alloy, specifically AuBe or AuGe, and may also be a single or multiple metal or alloy layers. The first ohmic contact layer primarily serves to establish ohmic contact between the electrode and the semiconductor light-emitting array and to spread current. The inorganic oxide conductive material may be materials such as ITO, IZO, or GZO, and is formed on the second window layer 106. The first ohmic contact layer 107 is preferably, but not limited to, formed on the second semiconductor layer by evaporation or electroless plating, followed by an alloying treatment at 300-500°C to form an alloyed contact layer between the first ohmic contact layer 107 and the second window layer. The details of the alloying process are well known to those skilled in the art and need not be disclosed herein.

[0049] Third, remove the growth substrate:

[0050] like Figure 2 As shown, a temporary substrate 108, such as glass, is bonded to the first ohmic contact layer 107 and the second window layer 106, and the growth substrate 101 is removed. The bonding agent can be a material such as glue or resin that is easily removed by heating or solvent dissolution or decomposition. The bonding process is conventional. There are many ways to remove the growth substrate, and conventional methods can be selected based on the actual growth substrate, such as wet etching, dry etching, or grinding. The growth substrate is removed to expose the first window layer 102.

[0051] Fourth, a second ohmic contact layer, a reflective layer, and a support substrate are formed on the first window layer side:

[0052] A second ohmic contact layer 109 is formed on the first window layer 102. To ensure good electrical contact with the first window layer, the second ohmic contact layer 109 is preferably made of a metal, more preferably a metal alloy such as AuGe or AuBe. The second ohmic contact layer 109 is formed on the first window layer 102 in the form of multiple ohmic contact regions and does not overlap with the first ohmic contact layer 107 in the thickness direction, thereby improving current spreading between the first ohmic contact layer 107 and the second ohmic contact layer 109.

[0053] like Figure 3 As shown, a transparent insulating layer 110 is then formed on the surface of the second ohmic contact layer 109. The formation process of the transparent insulating layer 110 is preferably, but not limited to, electron beam or sputtering evaporation. The material of the insulating layer 110 is an oxide, nitride, or fluoride, such as silicon dioxide, silicon nitride, calcium fluoride, or magnesium fluoride. The refractive index of the insulating layer 110 is between 1.3 and 1.6, and at least the refractive index of the insulating layer is 1.5 lower than the refractive index of the first window layer 102. The thickness of the insulating layer 110 is 50 to 500 nm, more preferably 50 to 100 nm. The insulating layer 110 is etched by BOE or RIE to expose the second ohmic contact layer 109 or further expose a portion of the first window layer 102. Next, a transparent conductive layer 111 is formed on the surface of the second ohmic contact layer 109 and the insulating layer 110. The transparent conductive layer is a transparent conductive metal oxide, such as ITO, IZO, GZO, or CTO. The thickness of the transparent conductive layer 111 can preferably be 5 to 15 nm. A metal reflective layer 112 is then formed on the transparent conductive layer 111. The transparent conductive layer 111 can act as an adhesion agent between the metal reflective layer 112. The function of the insulating layer 109 is to block current. When current flows through the second ohmic contact layer 109, the second ohmic contact layer 109 at multiple locations has a current spreading effect. At the same time, the insulating layer 110 and the metal reflective layer 112 can form an ODR structure, which improves reflection efficiency and can reach a reflectivity of over 95%.

[0054] The reflective layer 112 is bonded to the supporting substrate 113. The bonding process can be metal-metal high temperature and high pressure bonding. The component of the metal-metal bonding can be at least one of In, Au, Sn, Pb, InAu, and SnAu.

[0055] Then, the temporary substrate 108 is removed to expose the first ohmic contact layer and the first window layer.

[0056] Fifth, remove the temporary substrate and make the first electrode and the second electrode:

[0057] like Figure 4As shown, a first electrode 1071 is formed on the first ohmic contact layer 107, the material of the first electrode 1071 is preferably a metal material that can be used for external wire bonding, more preferably at least one of gold and aluminum, the first electrode 1071 connects one end of a plurality of finger electrodes of the first ohmic contact layer 1071, the other end of the finger electrodes extends out, and a second electrode 114 is formed on the back side of the support substrate 113, the second electrode is preferably a metal or metal alloy, such as Pt, Au.

[0058] The cutting separation is performed to form a chip of a corresponding size, and an insulating protective layer is made on the exposed side surface, surface of the semiconductor light-emitting sequence and the surface of the second ohmic contact layer for better protection of the semiconductor light-emitting sequence and the second ohmic contact layer, and the single chip is completed. The single chip can be used for transfer to subsequent packaging and application product manufacturing.

[0059] The positional relationship between the first ohmic contact layer and the second ohmic contact layer is specifically described as follows. Figure 5 As shown, the first ohmic contact layer 107 includes a plurality of finger electrodes extending horizontally on the side of the second window layer 106, the plurality of finger electrodes are connected to the first electrode 1071, current is injected through the first electrode 1071 and expanded through the plurality of finger electrodes and injected into the semiconductor light-emitting sequence, and then transmitted along the thickness direction of the semiconductor light-emitting sequence longitudinally and laterally to the plurality of contact regions of the second ohmic contact layer and downward to the second electrode, or the current is transmitted from the second electrode to the plurality of contact regions of the second ohmic contact layer, further transmitted to the semiconductor light-emitting sequence, and then transmitted to the first electrode through the plurality of finger electrodes of the first ohmic contact layer, thereby improving the uniformity of current transmission.

[0060] The small part of each finger electrode connected to the first electrode can be curved or bent or linear; in order to ensure the uniformity of current transmission of the finger electrodes on the side of the semiconductor sequence, the main part of each finger electrode is preferably parallel, and the meaning of as much as possible is that the parallel can deviate from the parallel by about 10° at most, that is, the plurality of finger electrodes can extend in a manner that the main parts of the finger electrodes are parallel to each other; the number of the plurality of finger electrodes is at least two, and the width of each finger electrode and the spacing between adjacent finger electrodes can be designed according to the actual size of the chip; the width of the plurality of finger electrodes can be constant along the direction of extension of the finger electrodes or varied according to the uniformity of current diffusion, such as gradually decreasing along the direction of extension, and the size of the part of the finger electrode around the first electrode is greater than the size of the part away from the first electrode; the width of the plurality of finger electrodes is 1-50 μm.

[0061] From the side of the finger-shaped electrodes of the semiconductor light-emitting sequence, the second ohmic contact layer 107 between every two adjacent finger-shaped electrodes is arranged in the form of a plurality of dots to form a plurality of second ohmic contact regions, and the plurality of second ohmic contact regions are arranged in multiple columns along the direction parallel to the finger-shaped electrodes, and more preferably, the plurality of finger-shaped electrodes do not overlap the plurality of second ohmic contact regions in the thickness direction to facilitate the current to propagate in the transverse and longitudinal directions at the same time; more preferably, the plurality of second ohmic contact regions are arranged in an array on one side of the semiconductor light-emitting sequence, and the array is formed by arranging a fixed number of second ohmic contact regions as a certain fixed unit and repeating the arrangement, and specifically as shown in Figure 5 The plurality of second ohmic contact regions are arranged in the closest hexagonal arrangement, that is, there are six equidistant second ohmic contact regions around each second ohmic contact region (except for the plurality of second ohmic contact regions in the first column closest to the strip-shaped electrode), and preferably, the size of each second ohmic contact region is 1-50 μm, and each of the plurality of second contact regions is circular or polygonal or elliptical, and the ratio between the total area of the plurality of ohmic contact regions and the area of the side of the semiconductor sequence is 3-50%.

[0062] Since the current transmission path is preferably selected in the shortest path (with the smallest resistance), the vertical distance between the plurality of second ohmic contact regions in the first column closest to the finger-shaped electrode and the finger-shaped electrode is the closest, and the vertical distance between the plurality of ohmic contact regions in the second column and the finger-shaped electrode is farther, and the current is preferably transmitted from the vertical direction of the extension direction of the finger-shaped electrode to the nearest plurality of second ohmic contact regions on both sides of the first column, and the current is more likely to be congested to the ohmic contact regions in the first column, resulting in excessive concentration of current in the plurality of second ohmic contact regions in the first column, and uneven current transmission; therefore, in order to ensure the uniformity of the current transmission between the finger-shaped electrode and the second ohmic contact region and prevent the current from being concentrated near the finger-shaped electrode on both sides, the present application is specially designed to arrange the second ohmic contact electrode as close as possible to the finger-shaped electrode, and the distance from the finger-shaped electrode side to the plurality of second ohmic contact regions in the second column is closer.

[0063] Specifically as shown in Figure 6As shown, the distance between any second ohmic contact region A in the first column closest to the finger electrode and the adjacent second ohmic contact region B in the same column is greater than the distance between the second ohmic contact region A and the adjacent second ohmic contact region C in the adjacent column; specifically, the distance between any second ohmic contact region A in the first column closest to the finger electrode parallel to the extension direction of the finger electrode and the adjacent second ohmic contact region B in the same column is defined as D1, and the range of D1 is 1~50μm, and the distance between any second ohmic contact region B in the first column closest to the finger electrode and the adjacent second ohmic contact region C in the adjacent column is D2, D1 is greater than D2, thereby ensuring that the adjacent second ohmic contact region C in the adjacent column is as close to the finger electrode as possible; more preferably, as Figure 6 As shown, when multiple second ohmic contact areas are arranged in the closest hexagonal arrangement, the ratio between D1 and D2 is : 1; More preferably, when viewed in the direction perpendicular to the finger electrodes, any second ohmic contact area C of the second column is located between two adjacent second ohmic contact areas A and B of the first column, that is, when viewed in the direction perpendicular to the finger electrodes, the second ohmic contact area C and the two second ohmic contact areas A and B of the first column are staggered or spaced apart, that is, the second contact area C is not perpendicular to the finger electrodes, thereby ensuring that part of the current of the finger electrodes will flow more easily to the second contact area C, reducing the proportion of current concentrated in multiple second ohmic contact areas in the first column; More preferably, the distance between two adjacent columns is half of the D2 value.

[0064] More preferably, the distance between two adjacent second ohmic contact regions in any column is defined as a unit D3, and the distance between any second ohmic contact region and an adjacent second ohmic contact region in an adjacent column is less than the unit D4, where D3=D1 and D4=D2.

[0065] In order to ensure good current expansion between the finger electrodes and the second ohmic contact areas, the distance between any second ohmic contact area in the first column closest to the finger electrodes parallel to the extension direction of the finger electrodes and the finger electrodes is 5% to 50% of the horizontal distance between the two adjacent finger electrodes; on the contrary, if the distance between multiple second ohmic contact areas in the first column and the finger electrodes is too close, it will cause excessive concentration of current in the multiple second ohmic contact areas in the first column, which is not conducive to the lateral transmission of current.

[0066] Example 2

[0067] The difference between the manufacturing process of embodiment 1 is that a second ohmic contact layer 201 such as a metal alloy, such as AuBe or AuGe alloy, is formed on the light emitting semiconductor sequence manufactured in the first step, thereby forming a second ohmic contact layer 201 such as a metal alloy, such as AuBe or AuGe alloy, on the second window layer 106.Figure 7 The second ohmic contact layer 201 includes a plurality of independent ohmic contact areas distributed horizontally along the side of the second window layer 106. Then, an alloying process is performed at 300-500°C to form an alloyed contact layer between the second ohmic contact layer 201 and the second window layer 106. The details of the alloying process are known to those skilled in the art and need not be disclosed herein.

[0068] As shown, a transparent insulating layer 202 is formed on the surface of the second ohmic contact layer 201. The transparent insulating layer 202 is formed by electron beam or sputtering evaporation. The material of the insulating layer 202 is an oxide or a nitride or a fluoride, such as silicon dioxide, silicon nitride, or calcium fluoride or magnesium fluoride, etc. The refractive index of the insulating layer 202 is between 1.3 and 1.6, and the refractive index of the insulating layer is at least 1.5 lower than the refractive index of the first window layer. The thickness of the insulating layer 202 is 50-500 nm, and is further preferably 50-100 nm. The insulating layer 202 is etched by BOE or RIE to expose the second ohmic contact layer 201 or can further expose part of the second window layer 201. Figure 8 Then, a transparent conductive layer 203 is formed on the surface of the second ohmic contact layer 201 and the insulating layer 202. The transparent conductive layer 203 is a transparent conductive metal oxide, such as ITO, IZO, GZO, or CTO. The thickness of the transparent conductive layer 203 is 5-500 nm. Then, a metal reflective layer 204 is formed on the transparent conductive layer 203. The transparent conductive layer 203 serves as an adhesive between the metal reflective layer. The insulating layer 202 serves to block current. When current flows through the second ohmic contact layer, the plurality of first ohmic contact layers have a current spreading effect. At the same time, the insulating layer 203 and the reflective layer 204 can form an ODR structure to improve the reflection efficiency, and the reflectivity can reach more than 95%. The reflective layer can be made of a metal material with high reflectivity, such as silver or gold.

[0069] Then, the reflective layer 204 is bonded to a support substrate 205. The bonding process can be performed by metal-metal high temperature and high pressure bonding. The metal-metal bonding composition can be at least one of In, Au, Sn, Pb, InAu, SnAu.

[0070] Then, the growth substrate 101 is removed to expose the first window layer 102.

[0071]

[0072] ​Then, a first ohmic contact layer 207 is formed on the first window layer 102, such as a conductive material, such as AuBe or AuGe alloy. The first ohmic contact layer 107 is preferably but not limited to formed on the second semiconductor layer side by evaporation or electroless plating or other means, and then alloyed at 300-500°C to form an alloyed contact layer between the first ohmic contact layer 107 and the first window layer 102 for ohmic contact. The details of the alloying process are known to those skilled in the art and need not be disclosed herein.

[0073] Then a first electrode 2071 is formed on the first ohmic contact layer 207, which is used for external electrical connection, and a second electrode 206 is formed on the back side of the support substrate 205.

[0074] Specifically, the first ohmic contact layer 207 includes a plurality of finger electrodes extending horizontally on the second window layer side, and the plurality of finger electrodes are connected to the first electrode 2071. Current is injected through the first electrode 2071 and spread through the plurality of finger electrodes, and then transmitted to the plurality of contact areas of the second ohmic contact layer in the longitudinal direction along the thickness of the semiconductor light-emitting sequence and in the transverse direction, and then transmitted downward to the second electrode 206, or transmitted from the second electrode 206 to the plurality of contact areas of the second ohmic contact layer, further transmitted to the semiconductor light-emitting sequence, and then transmitted to the first electrode through the plurality of finger electrodes of the first ohmic contact layer.

[0075] The small part of each finger electrode near the connection to the first electrode can be curved or bent or linear; in order to ensure the uniformity of current transmission of the finger electrodes on the semiconductor sequence side, the main part of each finger electrode is preferably as parallel as possible, i.e. the plurality of finger electrodes can extend in a manner that the main parts are parallel to each other; the width of each finger electrode and the spacing between adjacent finger electrodes can be routinely designed according to the actual size of the chip; the width of the plurality of finger electrodes can be constant or varied according to the uniformity of current spreading, such as gradually decreasing along the direction of extension, the size of the part of the finger electrode around the first electrode is larger than the size of the part away from the first electrode; the width of the plurality of finger electrodes is 1-20 μm.

[0076] From the thickness direction of the semiconductor light-emitting sequence, the second ohmic contact layer 201 between every two adjacent finger electrodes is arranged in the form of a plurality of dots to form a plurality of second ohmic contact areas, and the plurality of second ohmic contact areas are arranged in a plurality of columns along the direction parallel to the finger electrodes; wherein the plurality of finger electrodes do not overlap with the plurality of second ohmic contact areas in the thickness direction; the plurality of second ohmic contact areas are arranged in an array on one side of the semiconductor light-emitting sequence, and the array is an array formed by arranging a plurality of second ohmic contact areas as a repeating unit, specifically as in the present embodiment or asFigures 10-11 As shown, the distance between any one ohmic contact region A' in the first column closest to the finger electrodes and the adjacent ohmic contact region B' in the same column is greater than the distance between any one ohmic contact region A' and an adjacent one ohmic contact region C' in the second column close to the finger electrodes, and the multiple ohmic contact regions in the two adjacent columns are staggered in a direction perpendicular to the finger electrodes; more preferably, the ratio of the distance between any one ohmic contact region (A, A') in the first column closest to the finger electrodes and the adjacent one ohmic contact region (B, B') in the same column to the distance between any one ohmic contact region (A, A') and an adjacent one ohmic contact region (C, C') in the second column close to the finger electrodes is greater than The plurality of ohmic contact regions in two adjacent columns are staggered in a direction perpendicular to the finger electrodes. The plurality of second ohmic contact regions are arranged in a square structure as an array pattern, i.e., any ohmic contact region C' in other columns that is not closest to the finger electrodes is surrounded by four ohmic contact regions (including A' and B') at equal distances. The four ohmic contact regions are located at the four corners of the square, which is a square or rectangle. The size of each second ohmic contact region is 1-50 μm. Each of the plurality of second contact regions is circular, polygonal, or elliptical. The ratio between the total area of ​​the plurality of ohmic contact regions and the area of ​​one side of the semiconductor sequence is 3-50%. More preferably, the distance between any one ohmic contact region (A) and an adjacent one of the ohmic contact regions (C) in an adjacent column is greater than twice the distance between the two adjacent columns.

[0077] Example 3

[0078] like Figure 12 The structure shown differs from Example 2 in that an insulating layer 301 is first formed on the second window layer 106. The transparent insulating layer 301 is formed by electron beam or sputtering evaporation. The insulating layer 301 is made of an oxide, nitride, or fluoride, such as silicon dioxide, silicon nitride, calcium fluoride, or magnesium fluoride. The refractive index of the insulating layer is between 1.3 and 1.6, and the refractive index of the insulating layer 301 is at least 1.5 lower than that of the first window layer 106. The insulating layer 301 has a thickness of 50 to 500 nm, more preferably 50 to 100 nm. The insulating layer 301 is etched using BOE or RIE to expose a portion of the first window layer. A plurality of tiny through-holes are formed in the insulating layer 301. Each through-hole has a size of 1 to 50 μm, and the through-holes occupy 10 to 50% of the second window layer 106 or the semiconductor light-emitting array.

[0079] In the second window layer 106 side exposed through holes and the surface of the insulating layer 301 further made transparent conductive layer 302 such as ITO, IZO, GZO or CTO, the thickness of the transparent conductive layer 302 is 5-5000nm, the transparent conductive layer can also be a single layer or multiple layers of different materials made of. The transparent conductive layer 302 and the second window layer 106 between the contact area is the ohmic contact area, then form a metal reflective layer 303 on the transparent conductive layer 302. Then the support substrate 304 and the subsequent manufacturing process and the same as example two.

[0080] Then, the first ohmic contact layer 307 is formed on the first window layer 102, such as conductive material such as AuBe or AuGe alloy. The first ohmic contact layer 307 is preferably but not limited to the second semiconductor layer side by evaporation or electroless plating or way, then alloying treatment at 300-500 DEG C, for forming ohmic contact between the first ohmic contact layer 307 and the first window layer 102 alloying contact layer. The details of the alloying process is known to those skilled in the art, not necessarily disclosed herein.

[0081] Then form the first electrode 3071 on the first ohmic contact layer 307, the first electrode 3071 for external electrical connection, the second electrode 305 is formed on the back side of the support substrate 205.

[0082] The first ohmic contact layer 307 and the transparent conductive layer 302 between the multiple ohmic contact area of the relationship between the position and the same as the setting mode of example one.

[0083] Comparative example 1

[0084] The materials of each layer of the light emitting element are the same as in example 1, and as shown in Figure 13 , the multiple second ohmic contact area in this comparative example is arranged in a closest hexagonal manner, that is, there are six equidistant ohmic contact areas around any one of the multiple second ohmic contact areas. Different from example 1, as shown in Figure 14 , the distance between the multiple contact areas A'' and B'' is equal to the distance between the ohmic contact areas B'' and C''. According to this arrangement, the distance between the ohmic contact areas A, B in Figure 5 and Figure 6 is greater than the distance between the ohmic contact areas B, C; according to this arrangement, because the multiple adjacent ohmic contact areas in the second column close to the finger electrode are far away from the finger electrode, the current will preferentially concentrate between the adjacent two second ohmic contact areas close to the first column, resulting in the current more easily crowded in the multiple second ohmic contact areas of the first column, and the transverse current diffusion between the finger electrodes is more difficult and uneven.

[0085] The above merely provides the preferred embodiments of the present application, and is not used to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall fall into the protection scope of the present application.

Claims

1. A semiconductor light emitting element, comprising: A semiconductor light emitting array, comprising a first-type conductive semiconductor layer, a second-type conductive semiconductor layer, and a light emitting layer therebetween; A plurality of finger-shaped electrodes are located on one side of the semiconductor light-emitting array in the thickness direction; A plurality of ohmic contact regions are located on the opposite side of the semiconductor light emitting array from the plurality of finger electrodes; The characteristic is that the main parts of the plurality of finger electrodes are parallel to each other, and when viewed from the side where the plurality of finger electrodes of the semiconductor light emitting array are located, the plurality of ohmic contact areas between the main parts of each two adjacent finger electrodes that are parallel to each other are along the finger electrodes. The electrodes are arranged into multiple columns in the direction of extension of the main parts that are parallel to each other, wherein the distance between any one ohmic contact area (A, A') of the first column of the main part closest to one of the finger electrodes and the adjacent ohmic contact area (B, B') in the same column is greater than the distance between any one ohmic contact area (A, A') and an adjacent one ohmic contact area (C, C') of the second column of the main part close to the one finger electrode, and the multiple ohmic contact areas of the two adjacent columns are staggered in the direction perpendicular to the extension of the main parts that are parallel to each other of the one finger electrode.

2. The semiconductor light emitting element according to claim 1, wherein: The multiple ohmic contact areas are arranged in an array.

3. The semiconductor light emitting element according to claim 2, wherein: The array arrangement is that there are four equidistant ohmic contact areas around any ohmic contact area.

4. The semiconductor light emitting element according to claim 3, wherein: The four equidistant ohmic contact areas form a rectangular square.

5. The semiconductor light emitting element according to claim 1, wherein: The ratio of the distance between any one ohmic contact region (A, A') in the first column closest to the finger electrode and the adjacent ohmic contact region (B, B') in the same column to the distance between any one ohmic contact region (A, A') and the adjacent one ohmic contact region (C, C') in the second column closest to the finger electrode is greater than or equal to , multiple ohmic contact regions in two adjacent columns are staggered in a direction perpendicular to the finger electrodes.

6. The semiconductor light emitting element according to claim 1, wherein: Viewed along the extending direction perpendicular to the finger electrodes, an adjacent ohmic contact region (C, C') in the second column is located between two adjacent second ohmic contact regions (A, A') and (B, B') in the column closest to the finger electrodes.

7. The semiconductor light emitting element according to claim 1, wherein: The distance between any ohmic contact region (A, A') and an adjacent ohmic contact region (C, C') in an adjacent column is greater than or equal to twice the distance between two adjacent columns.

8. The semiconductor light emitting element according to claim 1, wherein: Viewed from the thickness direction of the semiconductor light-emitting sequence, the plurality of finger electrodes do not overlap with the plurality of ohmic contact regions.

9. The semiconductor light emitting element according to claim 1, characterized in that: The distance between any one of the ohmic contact regions and the adjacent finger electrodes is between 5% and 50% of the horizontal distance between the two adjacent finger electrodes.

10. The semiconductor light emitting element according to claim 1, characterized in that: The multiple ohmic contact regions between every two adjacent finger electrodes are arranged into multiple columns along the direction of the finger electrodes, and the distance between any two adjacent columns of the multiple columns is between 5 μm and 50 μm.

11. The semiconductor light emitting element according to claim 1, characterized in that: The size of each of the plurality of ohmic contact regions is 1-50 μm.

12. The semiconductor light emitting element according to claim 1, characterized in that: The multiple ohmic contact regions occupy 3% to 50% of the area of ​​the adjacent side of the semiconductor light emitting array.

13. The semiconductor light emitting element according to claim 1, characterized in that: The main extension parts of each finger of the plurality of finger electrodes are arranged parallel to each other.

14. The semiconductor light emitting element according to claim 1, characterized in that: The plurality of finger electrodes are connected to the same first electrode region, and the plurality of finger electrodes extend from the first electrode region.

15. The semiconductor light emitting element according to claim 1, characterized in that: The insulating layer is formed on the side of the semiconductor light emitting array opposite to the finger electrodes in the thickness direction. The insulating layer has a plurality of exposed areas exposing a portion of the semiconductor light emitting array. The plurality of exposed areas are a plurality of ohmic contact areas.

16. The semiconductor light emitting element according to claim 15, characterized in that: The insulating layer is made of magnesium fluoride or calcium fluoride.

17. The semiconductor light emitting element according to claim 15, characterized in that: The multiple exposed areas of the insulating layer are formed by multiple through holes, and the opening size of the multiple through holes on the side of the semiconductor light emitting sequence is smaller than the opening size on the side away from the semiconductor light emitting sequence.

18. The semiconductor light emitting element according to claim 15, wherein: The side of the insulating layer away from the semiconductor light emitting array has a conductive layer, and the conductive layer includes a mirror reflection layer.

19. The semiconductor light emitting element according to claim 1, wherein: The distance between two adjacent ohmic contact regions in any column is greater than the distance between any ohmic contact region and an adjacent second ohmic contact region in an adjacent column.

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