A high-voltage integrated circuit and semiconductor circuit integrating two bootstrap circuits

Abstract

This invention relates to a high-voltage integrated circuit and semiconductor circuit integrating two bootstrap circuits. The high-voltage integrated circuit internally includes a high-side drive circuit, a low-side drive circuit, and a bootstrap circuit. The bootstrap circuit includes a first bootstrap unit, a second bootstrap unit, and a switching unit. The first bootstrap unit is based on a resistor connected in series with a diode, and the second bootstrap unit is based on a switching transistor. The switching unit controls one of the first and second bootstrap units via an external control signal to provide a floating power supply for a drive signal on one upbridge arm of the high-side drive circuit, while the other outputs to an external circuit. This allows the switching unit to control the second bootstrap unit to form the bootstrap circuit, thus preventing charging of the bootstrap capacitor and significantly reducing the standby power consumption of the high-voltage integrated circuit.

Description

Technical Field

[0001] This invention relates to a high-voltage integrated circuit and semiconductor circuit that integrates two bootstrap circuits, belonging to the field of semiconductor circuit application technology. Background Technology

[0002] High-voltage integrated circuits, or HVICs, are integrated circuit products that convert MCU signals into signals to drive inverter circuits. HVICs integrate PMOS transistors, NMOS transistors, transistors, diodes, Zener diodes, resistors, and capacitors to form multiple driver circuits. On one hand, HVICs receive control signals from the MCU to drive the switching transistors of subsequent inverter circuits, such as IGBTs or MOS transistors. On the other hand, they send system status detection signals back to the MCU. They are key chips within semiconductor circuits. Some high-voltage integrated circuits have integrated bootstrap circuits, typically composed of a resistor in series with a diode, connected to an external capacitor. Their working principle is that when the lower bridge arm switch of the inverter circuit driven by the high-voltage integrated circuit is turned on, low-voltage DC current charges the capacitor through the resistor and diode. That is, the capacitor is charged when the high-voltage integrated circuit is working. When the high-voltage integrated circuit is not working, the charging charge on the capacitor generates some power consumption, thus increasing the standby power consumption of the semiconductor circuit. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to address the issue of increased standby power consumption caused by the bootstrap circuit integrated within existing high-voltage integrated circuits.

[0004] Specifically, this invention discloses a high-voltage integrated circuit integrating two bootstrap circuits. The high-voltage integrated circuit internally includes a high-side drive circuit and a low-side drive circuit. The high-side drive circuit drives the upper arm switch of an external inverter, and the low-side drive circuit drives the lower arm switch of the external inverter. The high-side drive circuit internally includes a bootstrap circuit, which comprises:

[0005] The first bootstrap unit is based on a resistor connected in series with a diode.

[0006] The second bootstrap unit is based on a switching transistor;

[0007] The switch switching unit includes two controllable switch units, each with two input terminals, which are respectively connected to the output terminals of the first bootstrap unit and the second bootstrap unit.

[0008] The switching unit controls one of the first bootstrap unit and the second bootstrap unit via an external control signal to provide a floating power supply for one of the overpass arm drive signals in the high-side drive circuit, while the other outputs to an external circuit.

[0009] Optionally, the external control signal for the control switch switching unit is the enable control signal of the high-voltage integrated circuit.

[0010] Optionally, the controlled signal of the second bootstrap unit is the lower bridge arm drive signal corresponding to the upper bridge arm drive signal.

[0011] Optionally, the switch switching unit includes a first controllable switch unit and a second controllable switch unit. The first controllable switch unit and the second controllable switch unit each include two input terminals to be connected to the output terminals of the first bootstrap unit and the second bootstrap unit, respectively. The output terminal of the first controllable switch unit is used for the output terminal of the external circuit, and the output terminal of the second controllable switch unit is used for the output terminal of the high-side drive circuit. The control terminals of the first controllable switch unit and the second controllable switch unit are simultaneously connected to an enable control signal.

[0012] Optionally, the first controllable switching unit includes a second NMOS transistor, a third NMOS transistor, and a first NOT gate;

[0013] The drain of the second NMOS transistor is the first input terminal of the first controllable switch unit. The sources of the second NMOS transistor and the third NMOS transistor are connected to the output terminal of the first controllable switch unit. The gate of the second NMOS transistor and the input terminal of the first NOT gate are connected to the control terminal of the first controllable switch unit. The gate of the third NMOS transistor is connected to the output terminal of the first NOT gate.

[0014] Optionally, the second controllable switching unit includes a fourth NMOS transistor, a fifth NMOS transistor, and a second NOT gate;

[0015] The drain of the fourth NMOS transistor is the first input terminal of the second controllable switch unit. The source of the fourth NMOS transistor and the source of the fifth NMOS transistor are connected to the output terminal of the second controllable switch unit. The gate of the fourth NMOS transistor is connected to the output terminal of the second NOT gate. The gate of the fifth NMOS transistor and the input terminal of the second NOT gate are connected to the control terminal of the second controllable switch unit.

[0016] Optionally, the high-voltage integrated circuit also includes a Schmitt trigger module, which is connected in series to the ports of each input signal of the high-voltage integrated circuit.

[0017] Optionally, the high-voltage integrated circuit also includes a filter module corresponding to the Schmitt trigger module, which is connected in series after the Schmitt trigger module.

[0018] Optionally, the high-voltage integrated circuit also includes a voltage conversion module corresponding to the filter module, which is connected in series after the filter module.

[0019] The present invention also proposes a semiconductor circuit, which includes an inverter module and the aforementioned high-voltage integrated circuit, with the output terminal of the high-voltage integrated circuit connected to the inverter module.

[0020] The high-voltage integrated circuit of this invention internally includes a high-side driving circuit, a low-side driving circuit, and a bootstrap circuit. The bootstrap circuit comprises a first bootstrap unit, a second bootstrap unit, and a switching unit. The first bootstrap unit is based on a resistor connected in series with a diode, and the second bootstrap unit is based on a switching transistor. The switching unit controls one of the first and second bootstrap units via an external control signal to provide a floating power supply for a drive signal on one upbridge arm of the high-side driving circuit, while the other outputs to an external circuit. This allows the switching unit to control the second bootstrap unit to activate the bootstrap circuit, thus preventing charging of the bootstrap capacitor and significantly reducing the standby power consumption of the high-voltage integrated circuit. Attached Figure Description

[0021] Figure 1 This is a simplified block diagram of the high-voltage integrated circuit according to an embodiment of the present invention;

[0022] Figure 2 This is a simplified circuit schematic of the high-voltage integrated circuit according to an embodiment of the present invention;

[0023] Figure 3 This is a simplified circuit diagram of the bootstrap circuit of the high-voltage integrated circuit according to an embodiment of the present invention.

[0024] Figure 4 The circuit diagram of the first bootstrap unit based on resistors and diodes in the bootstrap circuit of this embodiment of the invention is shown.

[0025] Figure 5 The diagram shows the circuit schematic of the second bootstrap unit based on the switching transistor in the bootstrap circuit of this embodiment of the invention. Detailed Implementation

[0026] It should be noted that, provided there is no structural or functional conflict, the embodiments and features described in these embodiments can be combined with each other. The present invention will now be described in detail with reference to examples.

[0027] The semiconductor circuit mentioned in this invention is a circuit module that integrates power switching devices and high-voltage drive circuits, and is sealed in an external package. It has wide applications in the field of power electronics, such as frequency converters for driving motors, various inverter voltages, variable frequency speed control, metallurgical machinery, electric traction, and variable frequency home appliances. This semiconductor circuit also has several other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, power semiconductor module, power module, etc.

[0028] This invention proposes a high-voltage integrated circuit 100 that integrates two bootstrap circuits 130, such as... Figures 1 to 5 As shown, the high-voltage integrated circuit 100 internally includes a high-side drive circuit and a low-side drive circuit. The high-side drive circuit drives the upper bridge arm switch of the external inverter, and the low-side drive circuit drives the lower bridge arm switch of the external inverter. The high-side drive circuit internally includes a bootstrap circuit 130, which includes a first bootstrap unit 131, a second bootstrap unit 132, and a switching unit 133. The first bootstrap unit 131 is based on a resistor connected in series with a diode, and the second bootstrap unit 132 is based on a switch. The switching unit 133 includes two controllable switching units, each with two input terminals. The two input terminals are respectively connected to the output terminals of the first bootstrap unit 131 and the second bootstrap unit 132. The switching unit 133 controls one of the first bootstrap unit 131 and the second bootstrap unit 132 through an external control signal to provide a floating power supply for one of the upper bridge arm drive signals in the high-side drive circuit, while the other outputs to an external circuit.

[0029] As can be seen from the background technology introduction, the first bootstrap unit 131 is based on the bootstrap circuit 130 composed of resistors and diodes. When the high-voltage integrated circuit 100 is not working, the bootstrap capacitor still accumulates charge, resulting in the consumption of a certain amount of electrical energy, thereby increasing the standby power consumption of the high-voltage integrated circuit 100. The second bootstrap unit 132 is based on a switching transistor, and the switching state of the switching transistor is controllable. Therefore, when the high-voltage integrated circuit 100 is not working, the switching transistor is synchronously controlled to turn off, thereby ensuring that the bootstrap capacitor is not charged, thus significantly reducing the standby power consumption of the high-voltage integrated circuit 100.

[0030] It is worth noting that although the first bootstrap unit 131, composed of resistors and diodes, increases power consumption, it uses a diode direct-through charging method, resulting in fast charging time and good bootstrap performance. In contrast, the second bootstrap unit 132, based on a switching transistor, requires the switching transistor to be controllably turned on for charging. Therefore, the switching speed of the switching transistor affects the charging speed, and the on-resistance of the switching transistor is relatively large, resulting in a longer charging time and a relatively poorer bootstrap performance. The high-voltage integrated circuit 100 of this invention, by simultaneously setting these two bootstrap circuits 130 and selecting one of them to operate via a switching unit 133, can adapt to the specific needs of specific application scenarios. For example, if reduced standby power consumption is required, the second switching unit is selected; if faster charging speed is required, the first switching unit is selected, thus flexibly meeting specific application requirements. Furthermore, when one bootstrap unit is selected, the other can also be used as a bootstrap circuit in an external circuit, further expanding the application scenarios of the integrated circuit.

[0031] In some embodiments of the present invention, such as Figure 2 As shown, the external control signal of the control switch switching unit 133 is the enable control signal EN of the high-voltage integrated circuit 100. Therefore, it is unnecessary to reuse the enable control signal EN on an additional control port at the positive terminal of the high-voltage integrated circuit 100, thus saving port resources of the high-voltage integrated circuit 100.

[0032] In some embodiments of the present invention, such as Figure 2 As shown, the controlled signal of the second bootstrap unit 132 is the lower bridge arm drive signal LO corresponding to the upper bridge arm drive signal. This ensures that when the lower bridge arm drive signal is valid (e.g., high level), the lower bridge arm switch of the corresponding driven inverter circuit is turned on. Simultaneously, the lower bridge arm drive signal controls the switch of the second bootstrap unit 132 to turn on, thus synchronously charging the bootstrap capacitor. Conversely, when the lower bridge arm drive signal is invalid (e.g., low level), the lower bridge arm switch of the corresponding inverter circuit is turned off, thus closing the charging circuit for the bootstrap capacitor. Therefore, the bootstrap capacitor will not charge when the high-voltage integrated circuit 100 is not operating (i.e., the lower bridge arm drive signal is invalid), thereby reducing the standby power consumption of the high-voltage integrated circuit 100. It is worth noting that... Figure 2The diagram shows one of the upper and lower bridge arm drive circuits. The other two circuits are identical. Therefore, some input and output ports are named with additional numbers. For example, the upper bridge arm control signals HIN1 / 2 / 3 represent the first upper bridge arm control signal HIN1 to the third upper bridge arm control signal HIN3, respectively; the lower bridge arm control signals LI1 / 2 / 3 represent the first lower bridge arm control signal LIN1 to the third lower bridge arm control signal LIN3, respectively; and the upper bridge arm drive signals HO1 / 2 / 3 represent the first upper bridge arm drive signal HO1 to the third upper bridge arm drive signal HO3, and so on.

[0033] In some embodiments of the present invention, such as Figure 3 As shown, as one possible implementation of the switch unit 133, the switch unit 133 includes a first controllable switch unit 1331 and a second controllable switch unit 1332. The first controllable switch unit 1331 and the second controllable switch unit 1332 each include two input terminals, which are respectively connected to the output terminals of the first bootstrap unit 131 and the second bootstrap unit 132. The output terminal of the first controllable switch unit 1331 is an output terminal for external circuits, such as... Figure 3 In VB1-1, the output terminal of the second controllable switch unit 1332 is used as the output terminal for the high-side drive circuit, such as... Figure 3 In VB1, the control terminals of the first controllable switching unit 1331 and the second controllable switching unit 1332 are simultaneously connected to the enable control signal EN. The state of the enable control signal EN controls one of the first controllable switching units 1331 and 1332 to connect to the output terminal of the first bootstrap unit 131, and the other to connect to the output terminal of the second bootstrap unit 132. This achieves controllable selection and output of the two bootstrap circuits 130.

[0034] Specifically, such as Figure 3 As shown, the first controllable switching unit 1331 includes a second NMOS transistor Q2, a third NMOS transistor Q3, and a first NOT gate IC1; wherein the drain of the second NMOS transistor Q2 is the first input terminal of the first controllable switching unit 1331, the source of the second NMOS transistor Q2 and the source of the third NMOS transistor Q3 are connected to the output terminal of the first controllable switching unit 1331, the gate of the second NMOS transistor Q2 and the input terminal of the first NOT gate IC1 are connected to the control terminal of the first controllable switching unit 1331, and the gate of the third NMOS transistor Q3 is connected to the output terminal of the first NOT gate IC1.

[0035] The second controllable switching unit 1332 includes a fourth NMOS transistor Q4, a fifth NMOS transistor Q5, and a second NOT gate IC2; wherein the drain of the fourth NMOS transistor Q4 is the first input terminal of the second controllable switching unit 1332, the source of the fourth NMOS transistor Q4 and the source of the fifth NMOS transistor Q5 are connected to the output terminal of the second controllable switching unit 1332, the gate of the fourth NMOS transistor Q4 is connected to the output terminal of the second NOT gate IC2, and the gate of the fifth NMOS transistor Q5 and the input terminal of the second NOT gate IC2 are connected to the control terminal of the second controllable switching unit 1332.

[0036] The working principle of the above circuit is as follows: When the enable signal EN is high, the first NOT gate IC1 outputs a low level, which turns off the third NMOS transistor Q3 and turns on the second NMOS transistor Q2. At this time, the first bootstrap unit 131, which is composed of resistor R1 and diode D1, is output through the second NMOS transistor Q2 to the VB1-1 port that supplies power to the external circuit. At the same time, the second NOT gate IC2 outputs a low level, which turns off the fourth NMOS transistor Q4 and turns on the fifth NMOS transistor Q5. At this time, the second bootstrap unit 132, which is based on the first NMOS transistor Q1, is output through the fifth NMOS transistor Q5 to provide the floating power supply output port VB1 for the output port of the upbridge arm drive signal in the high-side drive circuit.

[0037] When the enable signal EN is low, the first NOT gate IC1 outputs a high level, causing the third NMOS transistor Q3 to turn on and the second NMOS transistor Q2 to turn off. At this time, the second bootstrap unit 132 based on the switching transistor first NMOS transistor Q1 outputs through the third NMOS transistor Q3 to the VB1-1 port that supplies power to the external circuit. At the same time, the second NOT gate IC2 outputs a high level, causing the fourth NMOS transistor Q4 to turn on and the fifth NMOS transistor Q5 to turn off. At this time, the first bootstrap unit 131 based on resistor R1 and diode D1 outputs through the fourth NMOS transistor Q4 to the output port of one of the upper bridge arm drive signals in the high-side drive circuit, providing the output port VB1 of the floating power supply.

[0038] Further integration Figure 4As shown, when the first bootstrap unit 131, composed of resistors and diodes, forms a bootstrap circuit 130 via output port VB1 and an external bootstrap capacitor, resistor R1 acts as a current-limiting resistor. Together with diode D1 and bootstrap capacitor C1, they form a complete bootstrap circuit. The voltage across bootstrap capacitor C1 provides the driving power to the high-side drive signal output terminal HO1 / 2 / 3, driving the upper arm IGBT Q9 of the inverter circuit, which is loaded with a high voltage (310V), to conduct. When the corresponding low-side drive signal LO1 / 2 / 3 outputs a high level, the lower arm IGBT Q10 of the inverter circuit conducts. At this time, the low-voltage DC current VCC charges the bootstrap capacitor C1 through a current loop formed by resistor R1, diodes D1 and C1, and the lower arm IGBT Q10 (e.g., ...). Figure 4 (As shown by the dashed line), this causes the voltage on the bootstrap capacitor C1 to charge to near the low-voltage DC VCC. When the low-side drive signal LO1 / 2 / 3 outputs a low level, the bootstrap capacitor C1 stops charging. Then, when the high-side drive signal output HO1 / 2 / 3 outputs a high level, the upper-side NMOS transistor Q8 turns on, causing one end of the bootstrap capacitor C1, i.e., the VS1 / 2 / 3 terminal, to rise to a high voltage (310V). Since the voltage across the bootstrap capacitor C1 cannot change abruptly, the voltage at the other end rises accordingly to high voltage + low-voltage DC, i.e., 310 + VCC. Diode D1 turns off, and the bootstrap capacitor C1 discharges through the conducting upper-side off transistor Q8 connected to the high-side drive signal to the gate of the upper-side IGBT transistor Q9 in the inverter circuit. This causes the gate voltage of the upper-side IGBT transistor Q9 to be higher than its emitter voltage than VCC, thus controlling the upper-side IGBT transistor Q9 to turn on.

[0039] Further integration Figure 5 As shown, when the second bootstrap unit 132 based on the switching transistor, i.e., the first NMOS transistor Q3, forms a bootstrap circuit 130 via the output port VB1 / 2 / 3 and an external bootstrap capacitor, the first NMOS transistor Q3 and the bootstrap capacitor C1 constitute a complete bootstrap circuit 130. The voltage across the bootstrap capacitor C1 provides the driving power to the high-side drive signal output terminal HO1 / 2 / 3, thereby driving the upper bridge arm IGBT transistor Q9 of the inverter circuit, which is loaded with a high voltage (310V), to turn on. When the corresponding low-side drive signal LO1 / 2 / 3 outputs a high level, the lower bridge arm IGBT transistor Q10 of the inverter circuit turns on. At the same time, the high level of the low-side drive signal LO1 / 2 / 3 also controls the first NMOS transistor Q3 to turn on, so that the low-voltage DC current VCC charges the bootstrap capacitor C1 through the first NMOS transistor Q3, C1, and the lower bridge arm IGBT transistor Q10 in a current loop (e.g., Figure 5(As shown by the dashed line), this causes the voltage on the bootstrap capacitor C1 to charge to near the low-voltage DC VCC. When the low-side drive signal LO1 / 2 / 3 outputs a low level, the first NMOS transistor Q3 and the lower bridge arm IGBT transistor Q10 are turned off, and the bootstrap capacitor C1 stops charging. Then, when the high-side drive signal output HO1 / 2 / 3 outputs a high level, the upper bridge arm NMOS transistor Q8 is turned on, causing one end of the bootstrap capacitor C1, i.e., the VS1 end, to rise to a high voltage (310V). Since the voltage across the bootstrap capacitor C1 cannot change abruptly, the voltage at the other end rises accordingly to the high voltage + low-voltage DC, i.e., 310 + VCC. The bootstrap capacitor C1 discharges through the turned-on upper bridge arm switch Q8, which is connected to the high-side drive signal, to the gate of the upper bridge arm IGBT transistor Q9 in the inverter circuit. This causes the gate voltage of the upper bridge arm IGBT transistor Q9 to be higher than the VCC voltage relative to its emitter, thus controlling the upper bridge arm IGBT transistor Q9 to turn on.

[0040] It is worth noting that the above Figure 4 and Figure 5 In this design, the internal circuitry of the switching unit 133 in the bootstrap circuit 130 is omitted. The first bootstrap unit 131, based on resistors and diodes, or the second bootstrap unit 132, based on the switching transistor (i.e., the first NMOS transistor Q3), is directly connected to the upper bridge arm NMOS transistor Q8. The switching unit 133 circuitry should be connected in between. Figure 4 and Figure 5 The square wave function of the bootstrap circuit was not installed in order to check it.

[0041] In some embodiments of the present invention, such as Figure 2 As shown, the high-voltage integrated circuit 100 also includes a Schmitt trigger module, which is connected in series to each input signal port of the high-voltage integrated circuit 100 to filter the level noise of the input signal. For example, the maximum value of logic 0 is 0.8V and the minimum value of logic 1 is 2.9V, thereby effectively filtering the noise voltage of logic 0 and logic 1. Figure 2 There are a total of 5 Schmitt trigger modules, namely the first Schmitt trigger module 101 to the fifth Schmitt trigger module 105.

[0042] In some embodiments of the present invention, such as Figure 2 As shown, the high-voltage integrated circuit 100 also includes a filtering module, which is connected in series after the Schmitt trigger module to filter high-frequency noise output from the Schmitt trigger module, such as filtering signals above 600KHz to 700KHz. Figure 2 There are a total of 5 filtering modules, namely the first filtering module 111 to the fifth filtering module 115.

[0043] In some embodiments of the present invention, such as Figure 2As shown, the high-voltage integrated circuit 100 also includes a voltage conversion module, which is connected in series after the aforementioned filter module. Since the low-voltage DC power supply VCC for the high-voltage integrated circuit 100 is typically 15V, while the input signals from external MCU ports such as HIN1 and LIN1 are 5V, a 7-8V voltage must be generated to match the operation of the back-end circuits. Additionally, a low-voltage DC power supply of approximately 5V is needed to power the internal MCU processor that integrates a sine wave algorithm. Therefore, the first and second voltage conversion modules are used to perform voltage conversion, boosting the voltage to a higher low voltage (7-8V), and also generating a low-voltage DC power supply to power the internal MCU. Figure 2 There are a total of 5 voltage conversion modules, namely the first voltage conversion module 121 to the fifth voltage conversion module 125.

[0044] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0045] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0046] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0047] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0048] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0049] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A high-voltage integrated circuit integrating two bootstrap circuits, wherein the high-voltage integrated circuit internally comprises a high-side drive circuit and a low-side drive circuit, the high-side drive circuit being used to drive the upper arm switch of an external inverter, and the low-side drive circuit being used to drive the lower arm switch of the external inverter, characterized in that, The high-side driving circuit internally includes a bootstrap circuit, which comprises: The first bootstrap unit is based on a resistor connected in series with a diode; The second bootstrap unit is based on a switching transistor; A switch switching unit includes two controllable switch units, each with two input terminals, which are respectively connected to the output terminal of the first bootstrap unit and the output terminal of the second bootstrap unit. The switching unit controls one of the first bootstrap unit and the second bootstrap unit to provide a floating power supply for one of the overpass arm drive signals in the high-side drive circuit through an external control signal, while the other outputs to an external circuit. The external control signal controlling the switch switching unit is the enable control signal of the high-voltage integrated circuit; The controlled signal of the second bootstrap unit is the lower bridge arm drive signal corresponding to the upper bridge arm drive signal.

2. The high-voltage integrated circuit according to claim 1, characterized in that, The switching unit includes a first controllable switching unit and a second controllable switching unit. The first controllable switching unit and the second controllable switching unit each include two input terminals, which are respectively connected to the output terminals of the first bootstrap unit and the second bootstrap unit. The output terminal of the first controllable switching unit is used for the output of an external circuit, and the output terminal of the second controllable switching unit is used for the output of a high-side drive circuit. The control terminals of the first controllable switching unit and the second controllable switching unit are simultaneously connected to the enable control signal.

3. The high-voltage integrated circuit according to claim 2, characterized in that, The first controllable switching unit includes a second NMOS transistor, a third NMOS transistor, and a first NOT gate; The drain of the second NMOS transistor is the first input terminal of the first controllable switch unit. The source of the second NMOS transistor and the source of the third NMOS transistor are both connected to the output terminal of the first controllable switch unit. The gate of the second NMOS transistor and the input terminal of the first NOT gate are both connected to the control terminal of the first controllable switch unit. The gate of the third NMOS transistor is connected to the output terminal of the first NOT gate.

4. The high-voltage integrated circuit according to claim 2, characterized in that, The second controllable switching unit includes a fourth NMOS transistor, a fifth NMOS transistor, and a second NOT gate; The drain of the fourth NMOS transistor is the first input terminal of the second controllable switch unit. The source of the fourth NMOS transistor and the source of the fifth NMOS transistor are connected to the output terminal of the second controllable switch unit. The gate of the fourth NMOS transistor is connected to the output terminal of the second NOT gate. The gate of the fifth NMOS transistor and the input terminal of the second NOT gate are connected to the control terminal of the second controllable switch unit.

5. The high-voltage integrated circuit according to claim 1, characterized in that, The high-voltage integrated circuit also includes a Schmitt trigger module, which is connected in series to the ports of each input signal of the high-voltage integrated circuit.

6. The high-voltage integrated circuit according to claim 5, characterized in that, The high-voltage integrated circuit also includes a filter module corresponding to the Schmitt trigger module, and the filter module is connected in series after the Schmitt trigger module.

7. The high-voltage integrated circuit according to claim 6, characterized in that, The high-voltage integrated circuit also includes a voltage conversion module corresponding to the filtering module, and the voltage conversion module is connected in series after the filtering module.

8. A semiconductor circuit, characterized in that, The semiconductor circuit is internally provided with an inverter module and a high-voltage integrated circuit as described in any one of claims 1 to 7, wherein the output terminal of the high-voltage integrated circuit is connected to the inverter module.

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