Microwave transducer and preparation method thereof

Abstract

The present disclosure provides a microwave transducer and a method for manufacturing the same, belonging to the field of communication technology. The microwave transducer of the present invention comprises: a dielectric layer having a first surface and a second surface disposed opposite to each other; a first electrode layer disposed on the first surface of the dielectric layer, wherein the reference electrode layer has at least one first opening; at least one transducer electrode disposed on the second surface of the dielectric layer, wherein the orthographic projection of one transducer electrode on the dielectric layer is located within the orthographic projection of one of the first openings on the dielectric layer; and at least one first microstrip line disposed on the second surface of the dielectric layer, wherein one of the first microstrip lines is configured to feed one of the transducer electrodes.

Description

Technical Field

[0001] The present invention belongs to the field of communication technology, and in particular relates to a microwave transducer and a method for preparing the same Background Art

[0002] Compared to 4G (the fourth generation mobile communication technology), 5G (fifth generation mobile networks) boasts higher data rates, greater network capacity, and lower latency. 5G frequency planning encompasses both low-band and high-band frequencies. The low-band (3-6 GHz) offers excellent propagation characteristics and abundant spectrum resources. Therefore, the development of transducer units and arrays for low-band communication applications has become a research and development hotspot. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art and provides a microwave transducer and a method for preparing the same.

[0004] In a first aspect, an embodiment of the present disclosure provides a microwave transducer, comprising:

[0005] A dielectric layer having a first surface and a second surface opposite to each other;

[0006] a first electrode layer, disposed on the first surface of the dielectric layer, and having at least one first opening;

[0007] at least one transducer electrode disposed on the second surface of the dielectric layer, wherein an orthographic projection of the transducer electrode on the dielectric layer is located within an orthographic projection of the first opening on the dielectric layer;

[0008] at least one first microstrip line, disposed on the second surface of the dielectric layer, and one of the first microstrip lines is electrically connected to one of the transducer electrodes;

[0009] A transducer electrode whose orthographic projection on the dielectric layer is located within one of the first openings, the first opening and a first microstrip line electrically connected to the transducer electrode forming a transducer unit;

[0010] In one of the transducer units, the orthographic projections of the first side of the first opening and the second side of the first microstrip line on the dielectric layer intersect at a first intersection; the orthographic projections of the transducer electrode and the first microstrip line on the dielectric layer intersect at a second intersection; and the distance between the first intersection and the second intersection is a first distance;

[0011] The maximum distance of the first opening along the normal direction passing through the first intersection is a second distance, and the first distance is less than or equal to half of the second distance.

[0012] Wherein, in one of the transducer units, an area ratio of an orthographic projection of the transducer electrode to the first opening on the dielectric layer is 0.017 to 0.67.

[0013] Wherein, in at least one of the transducer units, the orthographic projections of the center of the first opening and the center of the transducer electrode on the dielectric layer are located on the same straight line as the first intersection point.

[0014] Wherein, the first opening includes a third side and a fourth side connected to the first side, and the transducer electrode includes a fifth side and a sixth side connected to the second side;

[0015] The distance between the orthographic projections of the third side and the fifth side on the dielectric layer is a third distance, and the distance between the orthographic projections of the fourth side and the sixth side on the dielectric layer is a fourth distance;

[0016] The third distance is greater than or equal to the first distance, and the fourth distance is greater than or equal to the first distance.

[0017] The third distance is equal to the fourth distance.

[0018] The first opening has substantially the same shape as the transducer electrode.

[0019] Wherein, a feeding unit is further included, and the feeding unit is electrically connected to the first microstrip line.

[0020] The number of the first openings is 2 n At least two of the first openings have the same shape and size;

[0021] The feeding unit further includes an n-stage second microstrip line;

[0022] A second microstrip line located at the first level connects two adjacent first microstrip lines, and different second microstrip lines located at the first level connect to different first microstrip lines; a second microstrip line located at the mth level connects two adjacent second microstrip lines located at the m-1th level, and different second microstrip lines located at the mth level connect to different second microstrip lines located at the m-1th level; wherein, n≥2, 2≤m≤n, and m and n are both integers.

[0023] The microwave transducer is divided into a transducing area and a feeding area; the transducing electrode is located in the transducing area, and the feeding unit is located in the fed area; the first electrode layer is located in the transducing area and the feeding area;

[0024] The first electrode layer includes a first sub-electrode located in the transduction area and a second sub-electrode located in the feeding area; the orthographic projection of the second sub-electrode on the dielectric layer covers the orthographic projection of the feeding unit on the dielectric layer.

[0025] Wherein, the first electrode layer is provided with at least one second opening, and the second opening is located in the feeding area;

[0026] An orthographic projection of the second opening on the dielectric layer does not overlap with an orthographic projection of the feeding unit on the dielectric layer.

[0027] The orthographic projection of the second sub-electrode on the dielectric layer covers the orthographic projection of the second microstrip line on the dielectric layer, and the line width of the orthographic projection of the second microstrip line at the same position of the dielectric layer is less than or equal to 0.5 times the width of the orthographic projection of the second sub-electrode.

[0028] The orthographic projection of at least one level of the second microstrip line on the dielectric layer divides the orthographic projection of the second sub-electrode on the dielectric layer into two parts with different areas.

[0029] Wherein, the first electrode layer is provided with at least one third opening; the third opening is located in the transduction area;

[0030] The total area of ​​the second openings is greater than the total area of ​​the third openings.

[0031] Wherein, the dielectric layer is made of flexible material;

[0032] The material of the flexible material includes at least one of polyimide and polyethylene terephthalate.

[0033] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer, and a third sub-dielectric layer that are stacked. The surface of the first sub-dielectric layer facing away from the first bonding layer serves as the first surface of the dielectric layer, and the surface of the third sub-dielectric layer facing away from the second bonding layer serves as the second surface of the dielectric layer.

[0034] The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the material of the second sub-dielectric layer both includes polyethylene terephthalate.

[0035] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer, and a third sub-dielectric layer that are stacked. The surface of the first sub-dielectric layer close to the first bonding layer serves as the first surface of the dielectric layer, and the surface of the third sub-dielectric layer facing away from the bonding layer serves as the second surface of the dielectric layer.

[0036] The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the material of the second sub-dielectric layer both includes polyethylene terephthalate.

[0037] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, and a second sub-dielectric layer that are stacked. The surface of the first sub-dielectric layer facing away from the first bonding layer serves as the first surface of the dielectric layer, and the surface of the second sub-dielectric layer facing away from the first bonding layer serves as the second surface of the dielectric layer.

[0038] The material of the first sub-dielectric layer includes polyimide, and the material of the second sub-dielectric layer includes polyethylene terephthalate, or

[0039] The material of the first sub-dielectric layer includes polyethylene terephthalate, and the material of the second sub-dielectric layer includes polyimide.

[0040] Wherein, the thickness of the second sub-dielectric layer is greater than the thickness of the first sub-dielectric layer and the third sub-dielectric layer;

[0041] The first sub-dielectric layer and the third sub-dielectric layer have the same thickness.

[0042] Wherein, the ratio of the thickness of the dielectric layer to the thickness of the transducer electrode is 20-450.

[0043] Wherein, a protective layer is provided on the side of the transducer electrode facing away from the dielectric layer;

[0044] The orthographic projection of the protective layer on the dielectric layer covers the orthographic projection of the transducer electrode on the dielectric layer.

[0045] In a second aspect, an embodiment of the present disclosure provides a method for preparing a microwave transducer, comprising:

[0046] providing a dielectric layer;

[0047] forming a first electrode layer on the first surface of the dielectric layer by a patterning process, wherein a first opening is formed on the first electrode layer;

[0048] A pattern including a transducer electrode and a first microstrip line is formed on the second surface of the dielectric layer by a patterning process; an orthographic projection of one of the transducer electrodes on the dielectric layer is located within an orthographic projection of one of the first openings on the dielectric layer.

[0049] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer stacked in sequence; the preparation method includes: providing the first sub-dielectric layer;

[0050] forming the first electrode layer on the first sub-dielectric layer by a patterning process;

[0051] Coating the first adhesive layer on the side of the first sub-dielectric layer facing away from the first electrode layer, and forming the second sub-dielectric layer on the first adhesive layer, then forming the second adhesive layer on the surface of the second sub-dielectric layer facing away from the first adhesive layer, and forming the third sub-dielectric layer on the second adhesive layer;

[0052] A pattern including a transducer electrode and a first microstrip line is formed on the third sub-dielectric layer by a patterning process.

[0053] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer stacked in sequence; and the preparation method includes:

[0054] providing the first sub-dielectric layer;

[0055] forming the first electrode layer on the first sub-dielectric layer by a patterning process;

[0056] providing the third sub-dielectric layer;

[0057] forming a pattern including a transducer electrode and a first microstrip line on the third sub-dielectric layer by a patterning process;

[0058] A second sub-dielectric layer is provided, and a side of the first sub-dielectric layer on which the first electrode layer is formed is bonded to the second sub-dielectric layer via a first bonding layer, and a side of the second sub-dielectric layer on which the transducer electrode and the first microstrip line are formed is bonded to the second sub-dielectric layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 This is a cross-sectional view of a microwave transducer according to an embodiment of the present disclosure.

[0060] Figure 2 This is a top view of a microwave transducer according to an embodiment of the present disclosure.

[0061] Figure 3Schematic diagram of a transducer unit according to an embodiment of the present disclosure.

[0062] Figure 4 4 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure.

[0063] Figure 5 4 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure.

[0064] Figure 6 4 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure.

[0065] Figure 7 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0066] Figure 8 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0067] Figure 9 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0068] Figure 10 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0069] Figure 11 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0070] Figure 12 1 is a top view of another microwave transducer according to an embodiment of the present disclosure.

[0071] Figure 13 Schematic diagram of another transducer unit according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0072] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0073] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one", "an" or "the" do not indicate a quantity limitation, but rather indicate the existence of at least one. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0074] Firstly, Figure 1 is a cross-sectional view of a microwave transducer according to an embodiment of the present disclosure; Figure 2 is a top view of a microwave transducer according to an embodiment of the present disclosure; Figure 3 is a schematic diagram of a transducer unit according to an embodiment of the present disclosure; Figure 1-3 As shown, an embodiment of the present disclosure provides a microwave transducer, which includes a dielectric layer 1 , a first electrode layer 2 , a transducing electrode 31 and a first microstrip line 32 .

[0075] The dielectric layer 1 includes a first surface and a second surface that are arranged opposite to each other; for example: Figure 1 As shown, the first surface is the lower surface of the dielectric layer 1 , and the second surface is the upper surface of the dielectric layer 1 .

[0076] The first electrode layer 2 is provided on the first surface of the dielectric layer 1 and has at least one first opening 21. The voltage written into the first reference electrode layer 2 is a reference voltage, which includes but is not limited to a ground voltage.

[0077] The transducer electrodes 31 are arranged on the second surface of the dielectric layer 1 , and the orthographic projection of one transducer electrode 31 on the dielectric layer 1 is located within the orthographic projection of one first opening 21 on the dielectric layer 1 ; for example, the transducer electrodes 31 and the first openings 21 are arranged in a one-to-one correspondence.

[0078] The first microstrip line 32 is disposed on the second surface of the dielectric layer 1 and is configured to feed the transducer electrode 31. The first microstrip line 32 can be directly electrically connected to the transducer electrode 31, for example, with a one-to-one connection between the first microstrip line 32 and the transducer electrode 31. Alternatively, the first microstrip line 32 can feed the transducer electrode 31 through coupling, for example, where the orthographic projections of the first microstrip line 32 and the transducer electrode 31 on the dielectric layer 1 at least partially overlap. In the disclosed embodiment, the first microstrip line 32 is directly connected to the transducer element 31 as an example.

[0079] In the disclosed embodiment, a first opening 21 on the first electrode layer 2, a transducer electrode 31 within the first opening 21, and a first microstrip line 32 connected to the transducer electrode constitute a transducer unit. For this transducer unit, the orthographic projections of the first microstrip line 32 and the first opening 21 on the dielectric layer 1 intersect at a first intersection P1, and the orthographic projections of the first microstrip line 32 and the transducer electrode 31 on the dielectric layer intersect at a second intersection P2. The distance between the first intersection P1 and the second intersection P2 is a first distance d1. The maximum distance between the first opening along the normal direction through the first intersection P1 is a second distance d2. The first distance d1 is less than or equal to half of the second distance d2, meaning that the distance between the first intersection P1 and the second intersection P2 is small. In other words, the distance between the first opening 21 and the transducer electrode 31 at the feeding end of the first microstrip line 32 is small, thereby helping to expand the bandwidth of the transducer unit and thereby realizing a high-bandwidth microwave transducer. In addition, the first opening 21 on the first electrode layer 2 is in the high frequency band of the ultra-wideband, and the transducer electrode 31 serves as the main radiation source. Its structural prototype is equivalent to a monopole microwave transducer. In the low frequency band, the transducer electrode 31 and the first opening 21 increase the capacitance of the microwave transducer. Experiments have verified that the microwave transducer provided in the embodiment of the present disclosure operates in the 5G Sub-6GHz frequency band. It can be attached to a window and connected to the indoor CPE (Customer Premise Equipment) device via a low-loss cable, reducing space loss and improving the user's Internet experience to a certain extent.

[0080] In some examples, the ratio of the orthographic projections of the first opening 21 and the transducer electrode 31 on the dielectric layer in a transducer unit is 0.017 to 0.67. In the disclosed embodiments, by properly setting the areas of the first opening 21 and the transducer electrode 31, the width of the slit between the first opening 21 and the transducer electrode 31 is ensured, thereby expanding the operating bandwidth of the microwave transducer.

[0081] In some examples, the center of the orthographic projection of the transducer electrode 31 on the dielectric layer 1, the center of the orthographic projection of the first opening 21 on the dielectric layer 1, and the first intersection point P1 in at least some transducer units are located on the same straight line. That is, for a transducer unit, the first opening 21 and the transducer element 31 have the same axis of symmetry, thereby effectively matching impedance and improving the radiation efficiency of the microwave signal. The disclosed embodiments are described as follows: the center of the orthographic projection of the transducer electrode 31 on the dielectric layer 1, the center of the orthographic projection of the first opening 21 on the dielectric layer 1, and the first intersection point P1 in each transducer unit are all located on the same straight line.

[0082] In some examples, the first opening 21 in the first electrode layer 2 includes not only the first side 101, but also includes a third side 103 and a fourth side 104 connected to the first side 101. For example, the first opening 21 has a triangular shape. Simultaneously, the transducer element 31 includes not only the second side 102, but also includes a fifth side 105 and a sixth side 106 connected to the second side 102. For example, the transducer element 31 has a triangular shape. In at least some transducer units, the distance between the orthographic projections of the third side 103 and the fifth side 105 on the dielectric layer is a third distance d3, and the distance between the orthographic projections of the fourth side 104 and the sixth side 106 on the dielectric layer is a fourth distance d4. At least one of the third distance d3 and the fourth distance d4 is greater than or equal to the first distance d1. For example, both the third distance d3 and the fourth distance d4 are greater than or equal to the first distance d1. This means that the distance between the first opening 21 at the feeding end of the first microstrip line and the transducer electrode 31 is smaller, thereby helping to expand the bandwidth of the transducer unit, thereby achieving a high-bandwidth microwave transducer. In some examples, the ratio of the thickness of the dielectric layer 1 to the thickness of the transducer electrode 31 is 20 to 450. By selecting an appropriate thickness ratio between the dielectric layer 1 and the transducer electrode 31, the radiation performance of the microwave transducer can be improved.

[0083] In some examples, such as Figure 1 As shown, the dielectric layer 1 in the microwave transducer includes but is not limited to flexible materials, for example: the dielectric layer 1 is made of polyimide (PI) material. Of course, the dielectric layer 1 can also be glass-based. In some examples, when the dielectric layer 1 is made of PI material, its thickness is about 0.2 mm, and its Dk / Df is about 3.2 / 0.004. When the dielectric layer 1 is made of a PI substrate, the transducer electrode 31 is arranged on the upper surface of the PI substrate. At the same time, a protective layer 4 is formed on the side of the transducer electrode 31 away from the PI substrate, such as a self-repairing transparent waterproof coating, to protect the transducer electrode 31.

[0084] In some examples, Figure 4 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure; Figure 4As shown, the dielectric layer 1 in the microwave transducer is a composite film layer, comprising a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15, stacked in sequence. The first electrode layer 2 is disposed on the side of the first sub-dielectric layer 11 facing away from the first bonding layer 12, i.e., the side of the first sub-dielectric layer 11 facing away from the first bonding layer 12 serves as the first surface of the dielectric layer 1. The transducer electrode 31 is disposed on the side of the third sub-dielectric layer 15 facing away from the second bonding layer 14, i.e., the side of the second sub-dielectric layer 13 facing away from the second bonding layer 14 serves as the second surface of the dielectric layer 1. In this case, the transducer element 31 and the first microstrip line 32 are disposed on the upper surface of the third sub-dielectric layer 15. In this case, a connector can be directly soldered to the third sub-dielectric layer 15 to provide a microwave signal to the first microstrip line 32. The first electrode layer 2 is disposed on the lower surface of the first sub-dielectric layer 11, facilitating the provision of a ground voltage to the first electrode layer 2. In some examples, the first sub-dielectric layer 11 and the third sub-dielectric layer 15 may be made of, but not limited to, PI; the second sub-dielectric layer 13 may be made of, but not limited to, polyethylene terephthalate (PET). The first adhesive layer 12 and the second adhesive layer 14 may both be made of optically transparent adhesive (OCA). When the transducer electrode 31 is disposed on the side of the third sub-dielectric layer 15 facing away from the second adhesive layer 14, a protective layer 4, such as a self-healing transparent waterproof coating, is also formed on the side of the transducer electrode 31 facing away from the third sub-dielectric layer 15 to protect the transducer electrode 31.

[0085] In some examples, Figure 5 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure; Figure 5 As shown, the dielectric layer 1 in this microwave transducer is Figure 3The dielectric layer 1 of the microwave transducer shown has the same structure, comprising a first sub-dielectric layer 11, a first adhesive layer 12, a second sub-dielectric layer 13, a second adhesive layer 14, and a third sub-dielectric layer 15, stacked in sequence. The first electrode layer 2 is disposed on the side of the first sub-dielectric layer 11 near the first adhesive layer 12, i.e., the side of the first sub-dielectric layer 11 near the first adhesive layer 12 serves as the first surface of the dielectric layer 1. The transducer electrode 31 is disposed on the side of the second sub-dielectric layer 13 near the second adhesive layer 14, i.e., the side of the second sub-dielectric layer 13 near the second adhesive layer 14 serves as the second surface of the dielectric layer 1. In this case, the first microstrip line, transducer element, and first electrode layer are not exposed, effectively preventing corrosion by water and oxygen. In some examples, the first sub-dielectric layer 11 and the third sub-dielectric layer 15 are made of, but not limited to, PI; the second sub-dielectric layer 13 is made of, but not limited to, polyethylene terephthalate (PET). Both the first adhesive layer 12 and the second adhesive layer 14 can be made of optically transparent adhesive (OCA). When the transducing electrode 31 is disposed between the third sub-dielectric layer 15 and the second adhesive layer 14 , a protective layer 4 , such as a self-repairing transparent waterproof coating, is further formed on the upper surface of the third sub-dielectric layer 15 to protect the third sub-dielectric layer 15 .

[0086] like Figure 4 and 5 As shown, when the dielectric layer 1 includes a first sub-dielectric layer 11, a first adhesive layer 12, a second sub-dielectric layer 13, a second adhesive layer 14, and a third sub-dielectric layer 15, which are stacked in sequence, the first sub-dielectric layer 11 and the third sub-dielectric layer 15 can be made of the same material and have the same or substantially the same thickness. The second sub-dielectric layer 13 is different in material and thickness from the first sub-dielectric layer 11 (the third sub-dielectric layer 15), and is thicker than the first sub-dielectric layer 11. The thickness of the first sub-dielectric layer 11 (the third sub-dielectric layer 15) is approximately 10 μm to 80 μm, and the thickness of the second sub-dielectric layer 13 is approximately 0.2 mm to 0.7 mm.

[0087] In some examples, Figure 6 FIG. 1 is a cross-sectional view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 5As shown, the dielectric layer 1 in this microwave transducer includes a first sub-dielectric layer 11, a first bonding layer 12, and a second sub-dielectric layer 13, which are stacked. The surface of the first sub-dielectric layer 11 facing away from the first bonding layer 12 serves as the first surface of the dielectric layer 1, that is, the first electrode layer 2 is provided on the side of the first sub-dielectric layer facing away from the first bonding layer 12. The surface of the second sub-dielectric layer 13 facing away from the first bonding layer 12 serves as the second surface of the dielectric layer 1, that is, the transducer electrode is provided on the side of the second sub-dielectric layer 13 facing away from the first bonding layer 12. The material of the first sub-dielectric layer 11 includes polyimide, and the material of the second sub-dielectric layer 13 includes polyethylene terephthalate, or the material of the first sub-dielectric layer 11 includes polyethylene terephthalate, and the material of the second sub-dielectric layer 13 includes polyimide.

[0088] In some examples, the microwave transducer includes not only the above-mentioned dielectric layer 1, first electrode layer 2, transduction electrode 31 and first microstrip line 32, but also includes a feeding unit 5; the feeding unit 5 can be arranged on the second surface of the dielectric layer 1, and at least partially overlaps with the positive projection of the first microstrip line 32 on the dielectric layer 1, and is configured to feed the first microstrip line 32.

[0089] In some examples, when the number of the first openings 21 is 2 n When the shape and size of at least two first openings are the same, the feeding unit 5 may include n levels of second microstrip lines 51. A second microstrip line 51 located at the first level connects two adjacent first microstrip lines 32, and different second microstrip lines 51 located at the first level connect to different first microstrip lines 32; a second microstrip line 51 located at the mth level connects two adjacent second microstrip lines 51 located at the m-1th level, and different second microstrip lines 51 located at the mth level connect to different second microstrip lines 51 located at the m-1th level; wherein n ≥ 2, 2 ≤ m ≤ n, and m and n are both integers.

[0090] It should be noted that, in the embodiment of the present disclosure, the first microstrip line 32 is directly connected to the second microstrip line 51 of the feed unit 5 as an example for explanation. In this case, the first microstrip line 32 and the second microstrip line 51 can be arranged in the same layer and made of the same material. At the same time, the transducer electrode 31 can also be directly connected to the first microstrip line 32. In this way, the transducer electrode 31, the first microstrip line 32, and the second microstrip line 51 can be arranged in the same layer and made of the same material. In other words, the three can be formed in the same patterning process, thereby reducing process costs and improving production efficiency. Of course, in the embodiment of the present disclosure, the first microstrip line 32 and the feed unit 5 are arranged in layers, as long as the orthographic projection of the first microstrip line 32 and the first-level second microstrip line 51 on the dielectric layer 1 overlaps. For example, when the dielectric layer 1 includes a first sub-dielectric layer 11, a first adhesive layer 12, a second sub-dielectric layer 13, a second adhesive layer 14, and a third sub-dielectric layer 15, which are stacked in sequence, the first microstrip line 32 is disposed on a side of the second sub-dielectric layer 13 facing away from the first sub-dielectric layer 11, and the second microstrip line 51 is disposed on a side of the second sub-dielectric layer 13 closer to the first sub-dielectric layer 11. The orthographic projections of the first microstrip line 32 and the corresponding second microstrip line 51 on the first sub-dielectric layer 11 overlap. In this case, the second microstrip line 51 of the feeding unit 5 can feed the first microstrip line 32 through coupling.

[0091] In some examples, the first opening 21 on the first electrode layer 2 includes but is not limited to an arc or a triangle. Of course, the first opening 21 on the first electrode layer 2 can also be circular, rectangular, etc. Correspondingly, the shape of the transducer electrode 31 can be adapted to the shape of the first opening 21, that is, the shape of the transducer electrode 31 is the same as the shape of the first opening 21. Of course, the shape of the transducer electrode 31 can also be different from the shape of the first opening 21, for example, the transducer electrode 31 is triangular and the shape of the first opening 21 is rectangular. It should be noted that in the embodiment of the present disclosure, there is no limitation on the shapes of the first opening 21 and the transducer electrode 31, as long as the orthographic projection of the transducer electrode 31 on the dielectric layer 1 is within the orthographic projection of the first opening 21 on the dielectric layer 1.

[0092] The structures of the first opening 21 on the first electrode layer 2 and the transducing electrode 31 according to the embodiment of the present disclosure are described below with reference to specific examples.

[0093] In one example, if Figure 7 As shown, the first opening 21 on the first electrode layer 2 is an arc-shaped first opening 21 and is located on a side in the length direction of the first electrode layer 2 , and the transducer electrode 31 is a circular transducer electrode 31 . Figure 2In the example, the number of the first openings 21 on the first electrode layer 2 is 8, and the transducer electrodes 31 and the first openings 21 are arranged in a one-to-one correspondence. In this case, one transduction electrode 31 is connected to one first microstrip line 32, that is, eight first microstrip lines 32 are included; the feeding unit 5 includes three levels of second microstrip lines 51, wherein each of the second microstrip lines 51 located at the first level is connected to two adjacent first microstrip lines 32, and different second microstrip lines 51 located at the first level are connected to different first transmission lines. For example, from top to bottom, the first second microstrip line 51 of the first level is connected to the first microstrip line 32 connected to the first and second transduction electrodes 31; the second second microstrip line 51 is connected to the first microstrip line 32 connected to the third and fourth transduction electrodes 31; the third second microstrip line 51 is connected to the first microstrip line 32 connected to the fifth and sixth transduction electrodes 31; and the fourth second microstrip line 51 is connected to the first microstrip line 32 connected to the seventh and eighth transduction electrodes 31. Each second microstrip line 51 at the second level connects two adjacent second microstrip lines 51 at the first level, and different second microstrip lines 51 at the second level connect to different second microstrip lines 51 at the first level. For example, from top to bottom, the first second microstrip line 51 at the second level connects the first and second second microstrip lines 51 at the first level; the second second microstrip line 51 at the second level connects the third and fourth second microstrip lines 51 at the first level; and the second microstrip line 51 at the third level connects the two second microstrip lines 51 at the second level. Of course, the feed unit 5 includes not only the second microstrip lines 51 but also a converter 6, which is connected to the second microstrip line 51 at the nth level.

[0094] It should be noted that the above example only uses the provision of first openings 21 on one side of the lengthwise direction of the first electrode layer 2 as an example. In actual products, first openings 21 may also be provided on both sides of the lengthwise direction of the first electrode layer 2. For example, eight first openings 21 are provided on both sides of the lengthwise direction of the first electrode layer 2, and a transducer electrode 31 is provided at the position corresponding to each first opening 21. In this case, the first electrode layer 2 is mirror-symmetrical along the perpendicular midline of its width. In this case, the feed units 5 of the transducer electrodes 31 on both sides of the lengthwise direction of the first electrode layer 2 are identical, and the two second microstrip lines 51 at the nth level can be connected to a three-port converter 6 to implement the feeding function.

[0095] Continue to refer to Figure 7 The first electrode layer 2 includes not only first openings 21 but also auxiliary third openings 22 located between adjacent first openings 21. The third openings 22 include, but are not limited to, rectangular openings. In the disclosed embodiment, the third openings can adjust the radiation direction of the microwave signal, while also increasing the optical transmittance of the microwave transducer and improving the visual effect.

[0096] Continue to refer to Figure 7 There is a certain distance between the orthographic projections of any first opening 21 on the first electrode layer 2 and the center of the corresponding transducer electrode 31 on the dielectric layer 1, that is, there is an offset between the centers of the corresponding first opening 21 and the transducer electrode 31. This arrangement facilitates achieving optimal impedance matching.

[0097] Continue to refer to Figure 7 The first microstrip line 32 can have an L-shaped structure, comprising an electrically connected first portion and a second portion, wherein the first portion is connected to the transducer electrode 31, and the second portion is connected to the feed unit 5 (e.g., connected to the first-stage second microstrip line 51). The extension direction of the first portion is perpendicular to the extension direction of the second portion. The corner connecting the first portion and the second portion can be a rounded chamfer or a flat chamfer. The corner connecting the first portion and the second portion is preferably non-perpendicular to avoid microwave signal reflection at this location, which would increase microwave signal transmission loss.

[0098] In some examples, the first microstrip line 32 is a 50Ω microstrip line, that is, the impedance of the first microstrip line 32 is about 50Ω. Of course, a microstrip line with a corresponding impedance can also be selected as the first microstrip line 32 according to the gain parameter requirements of the microwave transducer structure.

[0099] In some examples, the curvature of the first opening 21 is about 200°-300°, for example, it can be 250°. The chord length of the first opening 21 is about 20mm-25mm, for example, it can be 22.7mm. In the embodiment of the present disclosure, the extension direction of the chord of the first opening 21 is parallel to the length direction of the first electrode layer 2. In this case, if a third opening 22 is provided between adjacent first openings 21, the depth and width of the third opening 22 are both about 20mm-30mm, for example, the depth and width of the third opening 22 are both 25mm. By reasonably setting the depth and width of the third opening, the optical transmittance of the microwave transducer can be effectively improved.

[0100] In another example, Figure 8 FIG. 1 is a top view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 8 As shown, the first opening 21 of the microwave transducer is formed in the first electrode layer 2, and the first opening 21 and the transducer electrode 31 are both triangular, that is, the transducer electrode 31 is a triangular sheet structure, each transducer electrode 31 is connected to a first microstrip line 32, for the feed unit 5 and Figure 2The feeding unit 5 shown is the same, so it will not be repeated here. A third opening 22 is also provided on the first electrode layer 2 in the embodiment of the present disclosure, and the third opening 22 can be located between the two first openings 21. In the embodiment of the present disclosure, the radiation direction of the microwave signal can be adjusted through the third opening, while improving the optical transmittance of the microwave transducer and improving the visual effect. Moreover, in the embodiment of the present disclosure, when the first opening 21 is triangular, the third opening 22 can also be triangular, and the third opening 22 is equivalent to the first opening 21 rotated 180°.

[0101] In another example, Figure 9 FIG. 1 is a top view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 9 As shown, the microwave transducer includes a transducing region Q1 and a feeding region Q2; wherein the transducing electrode 31 and the first opening 21 of the first electrode layer 2 are both arranged in the transducing region Q1, and the feeding unit 5 is arranged in the feeding region Q2. Figure 8 The microwave transducer structures shown are generally similar, with the transducer electrode 31 and the first opening 21 of the first electrode layer 2 both being triangular in shape, meaning that the transducer electrode 31 is a triangular sheet-like structure. The difference lies in the first electrode layer 2, which includes a first sub-electrode 23 located in the transducer region Q1 and a second sub-electrode 24 located in the feed region Q2. The orthographic projection of the second sub-electrode 24 on the dielectric layer 1 overlaps the orthographic projection of the feed unit 5 on the dielectric layer 1. For example, the outline of the second sub-electrode 24 is identical to that of the feed unit 5. It should be understood that, even in this case, the orthographic projection of the first electrode layer 2 on the dielectric layer 1 overlaps the orthographic projection of the feed unit 5 on the dielectric layer 1.

[0102] Continue to refer to Figure 9 In some examples, the first electrode layer includes not only a first opening 21 located in the transducing region, but also a second opening 25 located in the feeding region Q2, and the second opening 25 does not overlap with the orthographic projection of the feeding unit 5 on the dielectric layer 1. Providing the second opening 25 can not only improve the optical transmittance of the microwave transducer, but also change the radiation direction of the microwave signal.

[0103] For example, when the number of the first openings 21 of the first electrode layer 2 is 2 n When the feeding unit 5 includes n-stage second microstrip lines 51, a second opening 25 is provided between at least a portion of the second microstrip lines 51 on a side close to the transducing region Q1. Figure 7 A second opening 25 is provided on the left side of the first-stage second microstrip line 51 .

[0104] Further, Figure 10 FIG. 1 is a top view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 10As shown, the first sub-electrode 23 in the disclosed embodiment is further provided with a third opening 22, which can be located between the two first openings 21. In the disclosed embodiment, the third opening can adjust the radiation direction of the microwave signal, while increasing the optical transmittance of the microwave transducer and improving the visual effect. Furthermore, in the disclosed embodiment, when the first opening 21 is triangular, the third opening 22 can also be triangular, and the third opening 22 is equivalent to the first opening 21 rotated 180°.

[0105] In another example, Figure 11 FIG. 1 is a top view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 11 As shown, the microwave transducer and Figure 7 The structure of the microwave transducer shown is roughly the same, with the only difference being the first electrode layer 2. The second sub-electrode 24 of the first electrode layer 2 has the same pattern as the feeding unit 5. For example, if the feeding unit 5 includes a second microstrip line 51, the pattern of the second sub-electrode 24 corresponds to the second microstrip line 51. That is, except for the position corresponding to the feeding unit 5, the other positions of the second sub-electrode 24 of the first electrode layer 2 are hollowed out. That is, except for the position corresponding to the feeding unit 5, the second sub-electrode has a second opening 25. The other structures of the microwave transducer are the same as those of the first electrode layer 2. Figure 8 The microwave transducers shown have the same structure, so they will not be repeated here.

[0106] Figure 12 FIG. 1 is a top view of another microwave transducer according to an embodiment of the present disclosure; FIG. Figure 12 As shown, the first sub-electrode 23 in the disclosed embodiment is further provided with a third opening 22, which can be located between the two first openings 21. In the disclosed embodiment, the third opening can adjust the radiation direction of the microwave signal, while increasing the optical transmittance of the microwave transducer and improving the visual effect. Furthermore, in the disclosed embodiment, when the first opening 21 is triangular, the third opening 22 can also be triangular, and the third opening 22 is equivalent to the first opening 21 rotated 180°.

[0107] In some examples, the total area of ​​the third openings 22 on the first sub-electrode 23 is smaller than the total specific area of ​​the second openings 25 on the second sub-electrode 24. In the disclosed embodiment, the second openings 25 and the third openings 25 cooperate to adjust the radiation direction and also increase the optical transmittance of the microwave transducer, improving the visual effect.

[0108] In some examples, continue to refer to Figure 11 and 12The orthographic projection of the second sub-electrode 24 on the dielectric layer 1 covers the orthographic projection of the second microstrip line 51 on the dielectric layer 1, and the width of the orthographic projection of the second microstrip line 51 at the same position on the dielectric layer 1 is less than or equal to 0.5 times the width of the orthographic projection of the second sub-electrode 24. This ensures that the second microstrip line 51 is fully covered by the second sub-electrode 24, thereby reducing losses caused by outward radiation of microwave signals.

[0109] In some examples, the orthographic projection of at least one second microstrip line 51 on the dielectric layer 1 divides the orthographic projection of the second sub-electrode 24 on the dielectric layer 1 into two parts of unequal areas. In other words, the projection areas of the second sub-electrodes 24 on the left and right sides of the second microstrip line 51 are unequal.

[0110] It should be noted that the above description is based on the example that the first opening 21 and the transducer element 31 have the same shape, but in fact the first opening 21 and the transducer element 31 may also be different, such as Figure 13 In the transducer unit shown, the first opening 21 can be an opening formed by splicing a semicircular opening and a rectangular opening. In some examples, the materials of the above-mentioned first electrode layer 2, first microstrip line 32, second microstrip line 51 and transducer electrode 31 include but are not limited to aluminum or copper.

[0111] Experimental verification shows that the factors affecting the performance of the microwave transducer mainly include the material and dielectric constant / loss tangent (Dk / Df) of the dielectric layer 1, the material and thickness of the first electrode layer 2 and the transducer electrode 31, etc., which are explained below with specific examples, where the center frequency of the microwave transducer is 3.75 GHz.

[0112] In the first example, the cross-section of the microwave transducer is as follows: Figure 5 As shown, the top view is Figure 8As shown, the dielectric layer 1 of this microwave transducer adopts a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15 which are stacked in sequence. The transducer electrode 31, the first microstrip line 32 and the feeding unit 5 are arranged between the third sub-dielectric layer 15 and the second bonding layer 14, and the first electrode layer 2 is arranged between the first sub-dielectric layer 11 and the first bonding layer 12. Among them, the first sub-dielectric layer 11 and the third sub-dielectric layer 15 use a PI substrate with a thickness of 34μm and a Dk / Df of 3.46 / 0.0015; the second sub-dielectric layer 13 uses a PET substrate with a thickness of 0.5mm and a Dk / Df of 3.9 / 0.003; the first electrode layer 2 uses an aluminum material with a thickness of 0.6μm, and an arc groove is formed on the first electrode layer 2; the transducer electrode 31 uses an aluminum material with a thickness of 1.2μm and a circular radiation patch; the first bonding layer 12 and the second bonding layer 14 use OCA glue with a thickness of 5μm. The overall size of the microwave transducer is 62.4mm*375mm. From the above structural simulation, the -6dB impedance bandwidth of the microwave transducer is obtained to be 0.61GHz and 0.65GHz (3.20-3.81, 3.85-4.5GHz), the microwave transducer gain is 7.45dBi, the half-power beamwidth is 10° / 203°, and the microwave transducer radiation efficiency is 64.3%.

[0113] In the second example, the cross-section of the microwave transducer is as follows: Figure 4 As shown, the top view is Figure 8 As shown, the dielectric layer 1 of this microwave transducer adopts a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15 which are stacked in sequence. The transducer electrode 31, the first microstrip line 32 and the feeding unit 5 are arranged between the third sub-dielectric layer 15 and the second bonding layer 14, and the first electrode layer 2 is arranged between the first sub-dielectric layer 11 and the first bonding layer 12. The first and third sub-dielectric layers 11 and 15 utilize 60 μm thick PI substrates with Dk / Df ratios of 4.72 / 0.0047. The second sub-dielectric layer 13 utilizes a 0.5 mm thick PET substrate with Dk / Df ratios of 2.77 / 0.0059. The first electrode layer 2 utilizes 1.2 μm thick aluminum with triangular grooves formed therein. The transducer electrode 31 utilizes 1.2 μm thick aluminum with a triangular sheet structure. The first and second adhesive layers 12 and 14 utilize 5 μm thick OCA adhesive. The overall dimensions of the microwave transducer are 100.98 mm by 320 mm. Simulations of the above structure reveal a -6 dB impedance bandwidth of 1.37 GHz (3.13-4.5 GHz), a gain of 7.59 dBi, a half-power beamwidth of 12° / 47°, and a radiation efficiency of 73.4%.

[0114] The third example is a cross-sectional view of a microwave transducer. Figure 4 As shown, the top view is Figure 9 As shown, the dielectric layer 1 of this microwave transducer comprises a first sub-dielectric layer 11, a first adhesive layer 12, a second sub-dielectric layer 13, a second adhesive layer 14, and a third sub-dielectric layer 15, which are stacked in sequence. The transducer electrode 31, the first microstrip line 32, and the feed unit 5 are disposed between the third sub-dielectric layer 15 and the second adhesive layer 14. The first electrode layer 2 is disposed between the first sub-dielectric layer 11 and the first adhesive layer 12. The parts of this microwave transducer that are identical to those of the second example are not described in detail. The difference is that this microwave transducer includes a first sub-electrode 23 located in the transducer region Q1 and a second sub-electrode 24 located in the feed region Q2 in the first electrode layer 2. A triangular first opening 21 is formed in the first sub-electrode 23. The contour of the side of the second sub-electrode 24 facing away from the first sub-electrode 23 matches the contour of the feed unit 5. A hollow pattern is provided between at least a portion of the second microstrip line 51 and the side close to the transducer region Q1. For example: Figure 6 A hollow opening pattern is provided on the left side of the first-stage second microstrip line 51. This design of the first opening 21 further improves the gain of the microwave transducer array. The overall dimensions of the microwave transducer remain 100.98mm*320mm. Simulations of the above structure show a -6dB impedance bandwidth of 1.37GHz (3.13-4.5GHz), a gain of 10.74dBi, a half-power beamwidth of 12° / 61°, and a radiation efficiency of 73.2%.

[0115] For the fourth example, the cross-section of the microwave transducer is as follows: Figure 3 As shown, the top view is Figure 9 As shown, the dielectric layer 1 of this microwave transducer comprises a first sub-dielectric layer 11, a first adhesive layer 12, a second sub-dielectric layer 13, a second adhesive layer 14, and a third sub-dielectric layer 15, stacked in sequence. The transducer electrode 31, the first microstrip line 32, and the feed unit 5 are arranged on the side of the third sub-dielectric layer 15 facing away from the second adhesive layer 14. The first electrode layer 2 is arranged on the side of the first sub-dielectric layer 11 facing away from the first adhesive layer 12. Compared to the third example, this microwave transducer only changes the positions of the transducer electrode 31 and the first electrode layer 2; the remaining film layers remain unchanged and are therefore not described here. The overall dimensions of the microwave transducer are 98.93 mm by 320 mm. Simulations of the above structure indicate a -6 dB impedance bandwidth of 1.33 GHz (3.17-4.5 GHz), a gain of 10.40 dBi, a half-power beamwidth of 12° / 59°, and a radiation efficiency of 75.7%.

[0116] The fifth example is a cross-sectional view of a microwave transducer. Figure 3As shown, the top view is Figure 9 As shown, compared to the fourth example, this microwave transducer only changes the array size; the other membrane structures are the same, so they will not be repeated here. The overall size of the microwave transducer is 97.43mm*280mm. From the above structural simulation, the microwave transducer has a -6dB impedance bandwidth of 1.24GHz (3.26-4.5GHz), a microwave transducer gain of 9.55dBi, a half-power beamwidth of 14° / 61°, and a microwave transducer radiation efficiency of 77.1%.

[0117] The sixth example is a cross-sectional view of a microwave transducer. Figure 3 As shown, the top view is Figure 11 As shown, compared with the fifth example, this microwave transducer only changes the thickness and Dk / Df of the first sub-dielectric layer 11, the second sub-dielectric layer 13, the third sub-dielectric layer 15, the first bonding layer 12 and the second bonding layer 14, and changes the pattern of the second sub-electrode 24 of the first electrode layer 2. The remaining film layer structures are the same as those in the fifth example, so they will not be repeated here. The first sub-dielectric layer 11 and the third sub-dielectric layer 15 use a PI substrate with a thickness of 20 μm and a Dk / Df ratio of 4.72 / 0.0047; the second sub-dielectric layer 13 uses a PET substrate with a thickness of 0.3 mm and a Dk / Df ratio of 3.25 / 0.0048; the overall size of the microwave transducer is 95.7 mm*280 mm. From the above structural simulation, the -6 dB impedance bandwidth of the microwave transducer is obtained to be 1.39 GHz (3.11-4.5 GHz), the microwave transducer gain is 10.21 dBi, the half-power beamwidth is 14° / 69°, and the microwave transducer radiation efficiency is 69.7%.

[0118] The seventh example is a cross-sectional view of a microwave transducer. Figure 1 As shown, the top view is Figure 9 As shown, this microwave transducer differs only from the microwave transducers in the second to sixth examples above in dielectric layer 1. This microwave transducer utilizes a single-layer PET substrate with a Dk / Df ratio of 3.29 / 0.0058. The overall dimensions of the microwave transducer are 85.1 mm by 280 mm. Simulations of the structure show a -6 dB impedance bandwidth of 1.30 GHz (3.20-4.5 GHz), a gain of 9.82 dBi, a half-power beamwidth of 14° / 83°, and a radiation efficiency of 65.0%.

[0119] The eighth example is a cross-sectional view of a microwave transducer. Figure 1 As shown, the top view is Figure 9As shown, the difference between this microwave transducer and the microwave transducer of the seventh example lies in the dielectric layer 1, the radiation patch and the first electrode layer 2. The dielectric layer 1 of this microwave transducer adopts a PI substrate with a thickness of 0.2mm, and its Dk / Df is 3.2 / 0.004. The radiation patch and the first electrode layer 2 both adopt copper with a thickness of 18um. The overall size of the microwave transducer is 86.57mm*280mm. From the above structural simulation, the -6dB impedance bandwidth of the microwave transducer is 1.17GHz (3.33-4.5GHz), the microwave transducer gain is 10.54dBi, the half-power beamwidth is 14° / 81°, and the microwave transducer radiation efficiency is 78.8%.

[0120] In a second aspect, embodiments of the present disclosure provide a method for preparing a microwave transducer, which can be used to prepare any of the microwave transducers described above. The method specifically includes:

[0121] S1. Provide a dielectric layer.

[0122] The dielectric layer 1 may be a flexible substrate or a glass substrate, and step S1 may include a step of cleaning the dielectric layer 1 .

[0123] S2, forming a first electrode layer 2 on the first surface of the dielectric layer 1 by a patterning process, wherein a first opening 21 is formed in the first electrode layer 2.

[0124] In some examples, step S2 may specifically include: depositing a first metal film on the first surface of the dielectric layer 1 using a method including but not limited to magnetron sputtering, then coating, exposing, developing, and then wet etching, and stripping after etching to form a pattern including the first electrode layer 2.

[0125] S3. Form a pattern including a transducer electrode 31 and a first microstrip line 32 on the second surface of the dielectric layer 1 through a patterning process. The orthographic projection of one transducer electrode 31 on the dielectric layer 1 at least partially overlaps with the orthographic projection of the first opening 21 on the dielectric layer 1. Preferably, the orthographic projection of one transducer electrode 31 on the dielectric layer 1 is within the range defined by the orthographic projection of the first opening 21 on the dielectric layer 1. In some examples, the transducer electrode 31 and the first microstrip line 32 may also be formed in two patterning processes.

[0126] In some examples, step S3 may specifically include depositing a second metal film on the first surface of the dielectric layer 1 using a method including but not limited to magnetron sputtering, then coating with glue, exposing, developing, and then wet etching. After etching, stripping the glue to form a pattern including the transducer electrode 31 and the first microstrip line 32.

[0127] It should be noted here that the preparation order of the above steps S2 and S3 can be interchanged, that is, the transducer electrode 31 and the first microstrip line 32 can be formed on the second surface of the dielectric layer 1, and then the first electrode layer 2 is formed on the first surface of the dielectric layer 1, all of which are within the protection scope of the embodiments of the present disclosure.

[0128] In some examples, such as Figure 3 As shown, the dielectric layer 1 in the embodiment of the present disclosure includes a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15, which are stacked in sequence. The surface of the first sub-dielectric layer 11 facing away from the first bonding layer 12 serves as the first surface of the dielectric layer 1, and the surface of the third sub-dielectric layer 15 facing away from the second bonding layer 14 serves as the second surface of the dielectric layer 1. In other words, the reference is disposed on the side of the first sub-dielectric layer 11 facing away from the first bonding layer 12. The transducer electrode 31 and the first microstrip line 32 are disposed on the side of the third sub-dielectric layer 15 facing away from the second bonding layer 14. The preparation method of the embodiment of the present disclosure can also be implemented using the following steps.

[0129] S11 , providing a first sub-dielectric layer 11 .

[0130] The first sub-dielectric layer 11 may be a PI substrate, and step S11 may include a step of cleaning the first sub-dielectric layer 11 .

[0131] S12, forming a first electrode layer 2 on the first sub-dielectric layer 11 by a patterning process, wherein a first opening 21 is formed on at least one side of the first electrode layer 2.

[0132] The step of forming the first electrode layer 2 is the same as the above step S2 , and thus will not be described again here.

[0133] S13. Coat the first bonding layer 12 on the side of the first sub-dielectric layer 11 facing away from the first electrode layer 2, and form the second sub-dielectric layer 13 on the first bonding layer 12. Then, form the second bonding layer 14 on the surface of the second sub-dielectric layer 13 facing away from the first bonding layer 12, and form the third sub-dielectric layer 15 on the second bonding layer 14.

[0134] The second sub-medium layer 13 may be formed of a PET substrate, and the third sub-medium layer 15 may be formed of a PI substrate. The first adhesive layer 12 and the second adhesive layer 14 may be formed of OCA adhesive.

[0135] S14. Form a pattern including transducer electrodes 31 and first microstrip lines 32 on the third sub-dielectric layer 15 through a patterning process. The orthographic projection of one transducer electrode 31 on the second sub-dielectric layer 13 is within the orthographic projection of the first opening 21 on the dielectric layer 1. In some examples, the transducer electrodes 31 and first microstrip lines 32 may also be formed in two patterning processes.

[0136] The steps of forming the transducing electrode 31 and the first microstrip line 32 are the same as those of the above-mentioned step S3 , and thus will not be described again here.

[0137] It should be noted that, in the above example, steps S11 to S13 are performed before step S14. In an actual process, step S14 may be performed first, and then steps S11 to S13.

[0138] Reference Figure 4 The transducer electrode 31 may also be disposed between the second sub-dielectric layer 13 and the second adhesive layer 14, and the first electrode layer 2 may also be disposed between the first sub-dielectric layer 11 and the first adhesive layer 12. The formation method may be similar to the above method, so it will not be repeated here.

[0139] In addition, in the disclosed embodiment, the microwave transducer structure includes not only the dielectric layer 1, first electrode layer 2, transducer electrode 31, and first microstrip line 32 formed as described above. The microwave transducer structure may also include a feeding unit 5 formed on the second surface of the dielectric layer 1 and electrically connected to the first microstrip line 32. If the feeding unit 5 utilizes a feeding network formed by the second microstrip line 51 described above, a feeding unit 5 composed of the second microstrip line 51 may also be formed simultaneously with the formation of the first microstrip line 32 and transducer electrode 31.

[0140] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A microwave transducer comprising: A dielectric layer having a first surface and a second surface opposite to each other; a first electrode layer, disposed on the first surface of the dielectric layer, and having at least one first opening; at least one transducer electrode disposed on the second surface of the dielectric layer, wherein an orthographic projection of the transducer electrode on the dielectric layer is located within an orthographic projection of the first opening on the dielectric layer; at least one first microstrip line, disposed on the second surface of the dielectric layer, and one of the first microstrip lines is electrically connected to one of the transducer electrodes; A transducer electrode whose orthographic projection on the dielectric layer is located within one of the first openings, the first opening and a first microstrip line electrically connected to the transducer electrode forming a transducer unit; In one of the transducer units, the first side of the first opening and the orthographic projection of the first microstrip line on the dielectric layer intersect at a first intersection; The second side of the transducer electrode and the orthographic projection of the first microstrip line on the dielectric layer intersect at a second intersection; The distance between the first intersection point and the second intersection point is a first distance; The maximum distance of the first opening along the normal direction passing through the first intersection is a second distance, and the first distance is less than or equal to half of the second distance.

2. The microwave transducer according to claim 1, wherein: In one of the transducer units, an area ratio of an orthographic projection of the transducer electrode to the first opening on the dielectric layer is 0.017 to 0.

67.

3. The microwave transducer according to claim 1, wherein: In at least one of the transducer units, the orthographic projections of the center of the first opening and the center of the transducer electrode on the dielectric layer are located on the same straight line as the first intersection point.

4. The microwave transducer according to claim 3, wherein: The first opening includes a third side and a fourth side connected to the first side, and the transducer electrode includes a fifth side and a sixth side connected to the second side; The distance between the orthographic projections of the third side and the fifth side on the dielectric layer is a third distance, and the distance between the orthographic projections of the fourth side and the sixth side on the dielectric layer is a fourth distance; The third distance is greater than or equal to the first distance, and the fourth distance is greater than or equal to the first distance.

5. The microwave transducer according to claim 4, wherein: The third distance is equal to the fourth distance.

6. The microwave transducer according to claim 1, wherein: The first opening has substantially the same shape as the transducer electrode.

7. The microwave transducer according to any one of claims 1 to 6, wherein: It also includes a feeding unit, which is electrically connected to the first microstrip line.

8. The microwave transducer according to claim 7, wherein: The number of the first openings is 2 n At least two of the first openings have the same shape and size; The feeding unit further includes an n-stage second microstrip line; One second microstrip line located at the first level connects two adjacent first microstrip lines, and different second microstrip lines located at the first level are connected to different first microstrip lines; A second microstrip line at the mth level connects two adjacent second microstrip lines at the m-1th level, and different second microstrip lines at the mth level connect different second microstrip lines at the m-1th level; wherein n≥2, 2≤m≤n, and m and n are both integers.

9. The microwave transducer according to claim 8, wherein: The microwave transducer is divided into a transducing area and a feeding area; wherein the transducing electrode is located in the transducing area, and the feeding unit is located in the fed area; the first electrode layer is located in the transducing area and the feeding area; The first electrode layer includes a first sub-electrode located in the transduction area and a second sub-electrode located in the feeding area; the orthographic projection of the second sub-electrode on the dielectric layer covers the orthographic projection of the feeding unit on the dielectric layer.

10. The microwave transducer according to claim 9, wherein: The first electrode layer is provided with at least one second opening, and the second opening is located in the feeding area; An orthographic projection of the second opening on the dielectric layer does not overlap with an orthographic projection of the feeding unit on the dielectric layer.

11. The microwave transducer according to claim 10, wherein: The orthographic projection of the second sub-electrode on the dielectric layer covers the orthographic projection of the second microstrip line on the dielectric layer, and the line width of the orthographic projection of the second microstrip line at the same position of the dielectric layer is less than or equal to 0.5 times the width of the orthographic projection of the second sub-electrode.

12. The microwave transducer according to claim 11, wherein: The orthographic projection of at least one level of the second microstrip line on the dielectric layer divides the orthographic projection of the second sub-electrode on the dielectric layer into two parts with different areas.

13. The microwave transducer according to claim 10, wherein: The first electrode layer is provided with at least one third opening; the third opening is located in the transduction area; The total area of ​​the second openings is greater than the total area of ​​the third openings.

14. The microwave transducer according to claim 1, wherein: The medium layer is made of flexible material; The material of the flexible material includes at least one of polyimide and polyethylene terephthalate.

15. The microwave transducer according to claim 14, wherein: The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer, and a third sub-dielectric layer that are stacked, wherein a surface of the first sub-dielectric layer facing away from the first bonding layer serves as the first surface of the dielectric layer, and a surface of the third sub-dielectric layer facing away from the second bonding layer serves as the second surface of the dielectric layer; The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the material of the second sub-dielectric layer both includes polyethylene terephthalate.

16. The microwave transducer according to claim 14, wherein: The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer, and a third sub-dielectric layer, wherein a surface of the first sub-dielectric layer close to the first bonding layer serves as the first surface of the dielectric layer, and a surface of the third sub-dielectric layer close to the second bonding layer serves as the second surface of the dielectric layer; The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the material of the second sub-dielectric layer both includes polyethylene terephthalate.

17. The microwave transducer according to claim 14, wherein: The dielectric layer includes a first sub-dielectric layer, a first bonding layer, and a second sub-dielectric layer that are stacked, wherein a surface of the first sub-dielectric layer facing away from the first bonding layer serves as a first surface of the dielectric layer, and a surface of the second sub-dielectric layer facing away from the first bonding layer serves as a second surface of the dielectric layer; The material of the first sub-dielectric layer includes polyimide, and the material of the second sub-dielectric layer includes polyethylene terephthalate, or The material of the first sub-dielectric layer includes polyethylene terephthalate, and the material of the second sub-dielectric layer includes polyimide.

18. The microwave transducer according to claim 15 or 16, wherein: The thickness of the second sub-dielectric layer is greater than the thickness of the first sub-dielectric layer and the third sub-dielectric layer; The first sub-dielectric layer and the third sub-dielectric layer have the same thickness.

19. The microwave transducer according to claim 14, wherein: The ratio of the thickness of the dielectric layer to the thickness of the transducer electrode is 20-450.

20. The microwave transducer according to claim 1, wherein A protective layer is provided on the side of the transducer electrode facing away from the dielectric layer; The orthographic projection of the protective layer on the dielectric layer covers the orthographic projection of the transducer electrode on the dielectric layer.

21. A method for preparing a microwave transducer, comprising: providing a dielectric layer; forming a pattern including a first electrode layer on the first surface of the dielectric layer by a patterning process, wherein a first opening is formed on the first electrode layer; forming a pattern including a transducer electrode and a first microstrip line on the second surface of the dielectric layer by a patterning process; An orthographic projection of one of the transducing electrodes on the dielectric layer is located within an orthographic projection of one of the first openings on the dielectric layer, and one of the first microstrip lines is electrically connected to one of the transducing electrodes; A transducer electrode whose orthographic projection on the dielectric layer is located within one of the first openings, the first opening and a first microstrip line electrically connected to the transducer electrode forming a transducer unit; In one of the transducer units, the first side of the first opening and the orthographic projection of the first microstrip line on the dielectric layer intersect at a first intersection; The second side of the transducer electrode and the orthographic projection of the first microstrip line on the dielectric layer intersect at a second intersection; The distance between the first intersection point and the second intersection point is a first distance; The maximum distance of the first opening along the normal direction passing through the first intersection is a second distance, and the first distance is less than or equal to half of the second distance.

22. The preparation method according to claim 21, wherein The dielectric layer comprises a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer stacked in sequence; the preparation method comprises: providing the first sub-dielectric layer; forming a pattern including the first electrode layer on the first sub-dielectric layer by a patterning process; Coating the first adhesive layer on the side of the first sub-dielectric layer facing away from the first electrode layer, and forming the second sub-dielectric layer on the first adhesive layer, then forming the second adhesive layer on the surface of the second sub-dielectric layer facing away from the first adhesive layer, and forming the third sub-dielectric layer on the second adhesive layer; A pattern including a transducer electrode and a first microstrip line is formed on the third sub-dielectric layer by a patterning process.

23. The preparation method according to claim 21, wherein The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer stacked in sequence; the preparation method includes: providing the first sub-dielectric layer; forming a pattern including the first electrode layer on the first sub-dielectric layer by a patterning process; providing the third sub-dielectric layer; forming a pattern including a transducer electrode and a first microstrip line on the third sub-dielectric layer by a patterning process; A second sub-dielectric layer is provided, and a side of the first sub-dielectric layer on which the first electrode layer is formed is bonded to the second sub-dielectric layer via a first bonding layer, and a side of the second sub-dielectric layer on which the transducer electrode and the first microstrip line are formed is bonded to the second sub-dielectric layer.

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