Resistive memory devices and methods of operating the same
By dividing resistive memory cells into multiple regions and executing the formation process sequentially, combined with appropriate voltage and current conditions, the problems of insufficient formation time and uniformity of resistive memory are solved, and a more efficient formation process is achieved.
CN115346576BActive Publication Date: 2026-06-26EMEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- EMEMORY TECH INC
- Filing Date
- 2022-05-13
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
In the prior art, resistive memory has poor formation time and uniformity, especially due to uneven voltage and current distribution during the formation process, which leads to prolonged formation time and poor results.
Method used
By dividing the memory cell into multiple regions and executing the formation process in order from farthest from the driver to closest to the driver, and by combining different regions to provide appropriate bit line voltages, source line voltages and limiting currents, it is ensured that each memory cell is formed under appropriate voltage and current conditions.
Benefits of technology
It improves the formation time and uniformity of resistive memory, and enhances the efficiency and consistency of the formation process.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115346576B_ABST
Abstract
A resistive memory device includes a word line, a first memory cell, a second memory cell, a bit line, a source line, and a driver. The first memory cell and the second memory cell are coupled to the word line, the bit line, and the source line. The driver provides a forming voltage to the first memory cell and the second memory cell through the bit line and the source line in a forming program. A first connection distance between the first memory cell and the driver along the bit line and the source line is longer than a second connection distance between the second memory cell and the driver along the bit line and the source line. The first memory cell is executed the forming program earlier than the second memory cell. In the forming program, a first value of the forming voltage provided to the first memory cell is smaller than a second value of the forming voltage provided to the second memory cell. In this way, a forming time and a forming uniformity of the resistive memory device can be improved.
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