A remote plasma source generating device

Abstract

The present invention relates to the field of plasma processing technology, and discloses a remote plasma source generating device, including a connecting flange, which is used to connect to a thin film deposition chamber. The remote plasma source generating device uses an external vacuum pumping device to evacuate the thin film deposition chamber to prevent residual gas from remaining inside the plasma source generating device and causing plasma contamination. The gas source flowing into the straight pipe section is then precisely controlled by an air inlet component, and the gas is inductively coupled or capacitively coupled discharged by a discharge component, so that the gas source generates plasma ignition and thin film deposition occurs on the surface of a semiconductor or integrated circuit substrate in the thin film deposition chamber. At the same time, the gas input into the straight pipe section is transferred through a curved pipe section to prevent the plasma in the straight pipe section from directly bombarding the metal connector and causing plasma contamination, thereby achieving a simple and convenient multi-stage anti-pollution and precise control of thin film deposition effects.

Description

Technical Field

[0001] The present invention relates to the field of plasma processing technology, in particular to a remote plasma source generating device. Background Art

[0002] In semiconductor or integrated circuit processing, in order to ensure the qualified rate of product quality, it is necessary to strictly control the reaction atmosphere of the cavity to avoid particle generation. Remote plasma is widely used in this field, for example, in plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition. The principle of remote plasma is that under the action of capacitance or inductance, gas molecules will undergo plasma discharge, generating electrons and charged ions. Under the support of the gas, the high-energy electron and ion flows reach the substrate surface, activate the substrate and bombard the precursor molecules, which can reduce the reaction temperature and increase the growth rate. Existing remote plasma generators all use straight pipe gas paths. A large amount of high-energy electron and ion flows will directly bombard the metal adapter of the inlet / outlet, generating metal particles and mixing them in the plasma. These metal particles, under the support of the gas, reach the substrate surface along with the plasma. When used for a long time, they will cause contamination to the film. Therefore, a remote plasma source generator is proposed to solve the above problems. Summary of the Invention

[0003] (1) Technical problems solved

[0004] In response to the shortcomings of the existing technology, the present invention provides a remote plasma source generating device with the advantages of simple and convenient multi-stage pollution prevention and precise control of thin film deposition. It solves the problem that existing remote plasma generating devices all use straight pipe gas paths, and a large amount of high-energy electron flow and ion flow will directly bombard the metal adapter of the inlet / outlet, generating metal particles and mixing them in the plasma. These metal particles reach the substrate surface together with the plasma under the support of the gas, causing contamination of the film during long-term use.

[0005] (2) Technical solution

[0006] In order to achieve the above-mentioned simple and convenient multi-stage pollution prevention and precise control of thin film deposition, the present invention provides the following technical solutions: a remote plasma source generating device, comprising a connecting flange, which is used to connect to a thin film deposition chamber, and also comprises a straight pipe section. The air inlet end of the connecting flange is connected to the straight pipe section, and the outer wall of the straight pipe section is provided with a discharge component for exciting the gas inside the straight pipe section to generate plasma ignition. A curved pipe section is provided at one end of the straight pipe section away from the connecting flange. The straight pipe section and the curved pipe section are a single component. A metal adapter is provided at the air inlet end of the curved pipe section, and an air inlet component is provided at the air inlet end of the metal adapter. The air inlet component is used to control the amount of gas flowing into the curved pipe section, and the exhaust end of the thin film deposition chamber is connected to an external vacuum pumping device.

[0007] Preferably, the discharge assembly includes a first shell, a coil and a first terminal. The first shell is arranged on the outer wall of the straight pipe section. The outer wall of the straight pipe section and the inner side of the shell are wound with a coil. The shell is provided with a first terminal electrically connected to the coil. The first terminal is used to pass an alternating current through the coil and excite the gas inside the straight pipe section to generate plasma ignition.

[0008] Preferably, the discharge assembly includes a second shell, an electrode sheet and a second terminal. The second shell is arranged on the outer wall of the straight pipe section. Two electrode sheets are arranged on the opposite sides of the cylindrical surface of the straight pipe section and on the inner side of the second shell. The shell is provided with a second terminal electrically connected to the two electrode sheets respectively. The second terminal is used to pass an alternating voltage to the two electrode sheets and excite the gas inside the straight pipe section to generate plasma ignition.

[0009] Preferably, the air intake assembly includes a four-way pipe, a flow meter and a valve. The exhaust end of the four-way pipe is connected to the air intake end of the metal adapter. Flow meters and valves are provided on the three air intake ends of the four-way pipe. The three air intake ends of the four-way pipe are used to introduce argon, nitrogen and ammonia respectively.

[0010] This technical solution also provides a method for using a remote plasma source generating device, comprising the following steps:

[0011] S1. Place the semiconductor or integrated circuit to be processed into a thin film deposition chamber, and evacuate the thin film deposition chamber and the straight pipe section and the curved pipe section using an external vacuum device;

[0012] S2. Open the valve on the air inlet assembly and use a flow meter to control the flow rates of argon, nitrogen, and ammonia flowing into the metal adapter from the three air inlet ends of the four-way pipe. Simultaneously, turn on the power supply of the discharge assembly to observe whether plasma ignition occurs in the gas in the straight pipe section. If not, adjust the input current value of the first terminal or the output voltage value of the second terminal on the discharge assembly until the gas in the straight pipe section ignites normally.

[0013] S3. After the thin film deposition on the surface of the semiconductor or integrated circuit is completed, the power supply on the discharge component is disconnected and the valve on the air intake component is closed, and the semiconductor or integrated circuit is taken out and waits for the next workpiece to be processed in a cycle.

[0014] (3) Beneficial effects

[0015] Compared with the prior art, the present invention provides a remote plasma source generating device with the following beneficial effects:

[0016] The remote plasma source generating device uses an external vacuum pumping device to evacuate the thin film deposition chamber, thereby preventing the remaining gas inside the plasma source generating device from causing plasma contamination that affects the thin film deposition effect. The gas source flowing into the straight pipe section is then precisely controlled by the gas inlet component, and the gas is inductively coupled or capacitively coupled discharged by the discharge component, thereby causing the gas source to undergo plasma ignition, and thin film deposition occurs on the surface of the semiconductor or integrated circuit substrate in the thin film deposition chamber. At the same time, the gas input into the straight pipe section is transitioned through the curved pipe section, thereby preventing the plasma in the straight pipe section from directly bombarding the metal connector and causing plasma contamination that affects the thin film deposition effect, thereby achieving simple and convenient multi-stage pollution prevention and precise control of the thin film deposition effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a structural schematic diagram of a first embodiment of a remote plasma source generating device proposed by the present invention;

[0018] Figure 2 This is a schematic structural diagram of a second embodiment of a remote plasma source generating device proposed by the present invention;

[0019] Figure 3 This is a schematic structural diagram of a third embodiment of a remote plasma source generating device proposed by the present invention;

[0020] Figure 4 This is a structural schematic diagram of a fourth embodiment of a remote plasma source generating device proposed by the present invention. DETAILED DESCRIPTION

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0022] See also Figure 1-4, a remote plasma source generating device, including a connecting flange 1, the connecting flange 1 is used to connect with a thin film deposition chamber, the thin film deposition chamber is a fully sealed chamber, the thin film deposition chamber is provided with a gate for entering and exiting materials, and also includes a straight pipe section 2, the top of the connecting flange 1 is fixedly installed with a straight pipe section 2 extending into the thin film deposition chamber in the vertical direction, the outer wall of the straight pipe section 2 is fixedly installed with a discharge component 3 for exciting the internal gas of the straight pipe section 2 to generate plasma ignition, the discharge component 3 can be an inductively coupled discharge type or a capacitively coupled discharge type, the air inlet end of the straight pipe section 2 is fixedly installed with a bent pipe section 4, the bent pipe section 4 can be a ninety-degree bend, or other special-shaped bend structures, the bent pipe section 4 and the straight pipe section 2 are a transparent quartz tube or a transparent ceramic tube of a single body, the air inlet end of the bent pipe section 4 is fixedly installed with a metal connector 5, the air inlet end of the metal connector 5 is fixedly installed with an air inlet component 6, the air inlet component 6 is used to control the amount of air flowing into the metal connector 5 and the bent pipe section 4, thin film deposition chamber The exhaust end of the body is connected to an external vacuum pumping device; the thin film deposition chamber and the curved pipe section 4, the straight pipe section 2 and the metal connector 5 are evacuated by the external vacuum pumping device to avoid the remaining gas in the plasma source generating device, which causes plasma pollution and affects the thin film deposition effect; then the gas source flowing into the metal connector 5, the curved pipe section 4 and the straight pipe section 2 is accurately controlled by the air intake component 6, and the gas is inductively coupled or capacitively coupled discharged by the discharge component 3, so that the gas source undergoes plasma ignition phenomenon. Under the action of the air pressure of the air intake component 6, the plasma quickly deposits on the surface of the semiconductor or integrated circuit in the thin film deposition chamber, and at the same time, the gas input into the straight pipe section 2 is transitioned through the curved pipe section 4, thereby avoiding the plasma in the straight pipe section 2 from directly bombarding the metal connector 5, which causes plasma pollution and affects the thin film deposition effect, thereby achieving simple and convenient multi-stage pollution prevention and precise control of the thin film deposition effect.

[0023] Preferably, the discharge assembly 3 includes a first shell 31, a coil 32 and a first terminal 33. The first shell 31 is fixedly installed on the outer wall of the straight pipe section 2. The first shell 31 is a transparent part. The outer wall of the straight pipe section 2 and the inner side of the shell 31 are spirally wound with the coil 32. The shell 31 is fixedly installed with a first terminal 33 electrically connected to the coil 32. The first terminal 33 is used to pass an alternating current through the coil 32 and excite the gas inside the straight pipe section 2 to generate plasma ignition; when an alternating current is passed through the first terminal 33 to the coil 32, the gas in the straight pipe section 2 will undergo plasma discharge under the action of the alternating capacitor, generating electrons and charged ions. Under the support of the gas, the high-energy electron flow and ion flow reach the semiconductor or integrated circuit surface substrate in the thin film deposition chamber, activate the semiconductor or integrated circuit surface substrate and bombard the precursor molecules, which can reduce the reaction temperature and increase the growth rate, causing the semiconductor or integrated circuit surface substrate to form plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.

[0024] Preferably, the discharge assembly 3 includes a second shell 34, an electrode sheet 35 and a second terminal 36. The second shell 34 is fixedly installed on the outer wall of the straight pipe section 2. The second shell 34 is a transparent part. Two electrode sheets 35 are fixedly installed on the opposite side of the cylindrical surface of the straight pipe section 2 and on the inner side of the second shell 34. A second terminal 36 electrically connected to the two electrode sheets 35 is fixedly installed on the shell 31. The second terminal 36 is used to apply an alternating voltage to the two electrode sheets 35 and excite the gas inside the straight pipe section 2 to generate plasma ignition; an alternating voltage is applied to the two electrode sheets 35 through the second terminal 36. Under the action of the alternating voltage, the gas in the straight pipe section 2 will undergo plasma discharge, generating electrons and charged ions. Under the support of the gas, the high-energy electron flow and ion flow reach the semiconductor or integrated circuit surface substrate in the thin film deposition chamber, activate the semiconductor or integrated circuit surface substrate and bombard the precursor molecules, which can reduce the reaction temperature and increase the growth rate, causing the semiconductor or integrated circuit surface substrate to form plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.

[0025] Preferably, the air inlet assembly 6 includes a four-way pipe 61, a flow meter 62 and a valve 63. The exhaust end of the four-way pipe 61 is connected to the air inlet end of the metal adapter 5. The three air inlet ends of the four-way pipe 61 are fixedly installed with a flow meter 62 and a valve 63. The three air inlet ends of the four-way pipe 61 are used to introduce argon, nitrogen and ammonia respectively. The flow meter 62 and the valve 63 on the air inlet assembly 6 are used in conjunction with each other to facilitate accurate control of the argon, nitrogen and ammonia introduced into the straight pipe section 2, so that the plasma source generating device is suitable for activation of different semiconductor or integrated circuit surface substrates. Argon, nitrogen and ammonia are activated by the discharge assembly 3. A ignition phenomenon occurs and a mixture of argon ions, nitrogen ions and hydrogen-nitrogen ions is generated. The argon ions do not directly react with the semiconductor or integrated circuit surface substrate, but will destroy the chemical bonds on the substrate surface and activate the substrate surface, while the nitrogen ions will react with the semiconductor or integrated circuit surface substrate surface to generate nitrides. The hydrogen-nitrogen ion mixture mainly exhibits a reducing effect of hydrogen ions. For example, ammonia plasma is required for the growth of nickel metal. The ratio of argon, nitrogen and ammonia is quantitatively controlled by valve 63, thereby further improving the activation performance of the plasma source generating device, achieving simple and convenient multi-stage pollution prevention and precise control of thin film deposition effects.

[0026] This technical solution also provides a method for using a remote plasma source generating device, comprising the following steps:

[0027] S1. Place the semiconductor or integrated circuit to be processed into the thin film deposition chamber, and evacuate the thin film deposition chamber and the straight pipe section 2 and the curved pipe section 4 using an external vacuum device;

[0028] S2. Open the valve 63 on the air inlet assembly 6 and cooperate with the flowmeter 62 to control the flow rates of argon, nitrogen, and ammonia flowing into the metal adapter 5 from the three air inlet ends of the cross-tube 61. Simultaneously, turn on the power supply of the discharge assembly 3 to observe whether the gas in the straight pipe section 2 ignites the plasma. If not, adjust the input current value of the first terminal 33 or the output voltage value of the second terminal 36 on the discharge assembly 3 until the gas in the straight pipe section 2 ignites normally.

[0029] S3. After the thin film deposition on the surface of the semiconductor or integrated circuit is completed, the power supply on the discharge component 3 is disconnected and the valve 63 on the air inlet component 6 is closed, and the semiconductor or integrated circuit is taken out and waits for the next workpiece to be processed in a cycle.

[0030] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0031] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A remote plasma source generating device, comprising a connecting flange (1), the connecting flange (1) being used to connect to a thin film deposition chamber, characterized in that: It also includes a straight pipe section (2), the air inlet end of the connecting flange (1) is connected to the straight pipe section (2), the outer wall of the straight pipe section (2) is provided with a discharge component (3) for exciting the gas inside the straight pipe section (2) to generate plasma ignition, the end of the straight pipe section (2) away from the connecting flange (1) is provided with a curved pipe section (4), the straight pipe section (2) and the curved pipe section (4) are a single component, the air inlet end of the curved pipe section (4) is provided with a metal adapter (5), the air inlet end of the metal adapter (5) is provided with an air inlet component (6), the air inlet component (6) is used to control the amount of air flowing into the curved pipe section (4), and the exhaust end of the thin film deposition chamber is connected to an external vacuum pumping device; The discharge assembly (3) comprises a first shell (31), a coil (32) and a first terminal (33); the first shell (31) is arranged on the outer wall of the straight pipe section (2); the coil (32) is wound around the outer wall of the straight pipe section (2) and located inside the shell (31); the shell (31) is provided with a first terminal (33) electrically connected to the coil (32); the first terminal (33) is used to pass an alternating current through the coil (32) and excite the gas inside the straight pipe section (2) to generate plasma ignition; The method for using the remote plasma source generating device comprises the following steps: S1. placing a semiconductor or integrated circuit to be processed into a thin film deposition chamber, and evacuating the thin film deposition chamber and the straight pipe section (2) and the curved pipe section (4) using an external vacuum pumping device; S2, opening the valve (63) on the air inlet assembly (6) and cooperating with the flow meter (62) to control the flow rates of argon, nitrogen and ammonia respectively flowing into the metal adapter (5) from the three air inlet ends of the four-way pipe (61), and at the same time, by turning on the power supply on the discharge assembly (3), observing whether the gas in the straight pipe section (2) has a plasma ignition phenomenon; if not, adjusting the input current value of the first terminal (33) or the output voltage value of the second terminal (36) on the discharge assembly (3) until the gas in the straight pipe section (2) is normally ignited; S3. After the thin film deposition on the surface of the semiconductor or integrated circuit is completed, the power supply on the discharge component (3) is disconnected and the valve (63) on the air inlet component (6) is closed, and the semiconductor or integrated circuit is taken out and waits for the next workpiece to be processed in a cycle.

2. A remote plasma source generating device according to claim 1, characterized in that: The air intake assembly (6) comprises a four-way pipe (61), a flow meter (62) and a valve (63). The exhaust end of the four-way pipe (61) is connected to the air intake end of the metal adapter (5). The three air intake ends of the four-way pipe (61) are all provided with a flow meter (62) and a valve (63). The three air intake ends of the four-way pipe (61) are used to introduce argon, nitrogen and ammonia respectively.

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