Charge position determination method and apparatus, electronic device, and storage medium

Abstract

The present disclosure provides a charge position determination method and device, electronic equipment and computer readable storage medium, and relates to the technical field of semiconductor production and manufacturing. The method comprises: configuring at least one measurement condition acting on a target device; determining a corresponding target flat band voltage of the target device under each measurement condition; obtaining a pre-configured voltage distance association rule; the voltage distance association rule comprises an association relationship between a charge position and a flat band voltage; and determining a charge position of a mobile charge in the target device in the target device based on the voltage distance association rule and the at least one target flat band voltage. The present disclosure can quickly determine the charge position of the mobile example charge in the gate oxide layer and analyze the device threshold voltage of the semiconductor device.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor production and manufacturing, and particularly relates to a charge position determination method, a charge position determination device, an electronic device and a computer readable storage medium. BACKGROUND

[0002] MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor, abbreviated as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET); wherein MOS is the abbreviation of MOSFET. In the actual production and manufacturing process, there are many factors affecting the reliability of MOS devices and integrated circuits, including: design aspects, such as selection of materials, devices and processes; process aspects, such as instability of physical, chemical and other processes; use aspects, such as stress of electricity, heat, machinery and the like, and invasion of water vapor and the like.

[0003] There are a large number of charges in the gate oxide layer of the actually prepared MOS device, and the position of the excess charge in the gate oxide layer will affect the flat band voltage of the device, thereby affecting the threshold voltage of the device.

[0004] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present disclosure, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] The purpose of the present disclosure is to provide a charge position determination method, a charge position determination device, an electronic device and a computer readable storage medium, thereby at least partially overcoming the problem that the position of mobile ion charge in the gate oxide layer of a semiconductor device cannot be quickly determined.

[0006] Other characteristics and advantages of the present disclosure will become apparent from the following detailed description, or will be learned by practice of the present disclosure.

[0007] According to a first aspect of the present disclosure, a charge position determination method is provided, comprising: configuring at least one measurement condition acting on a target device; determining a target flat band voltage corresponding to the target device under each measurement condition; obtaining a pre-configured voltage distance association rule; the voltage distance association rule comprises an association relationship between the charge position and the flat band voltage; based on the voltage distance association rule and at least one target flat band voltage, determining the charge position of the mobile charge in the target device in the target device.

[0008] In an example embodiment of the present disclosure, the measurement conditions include a first measurement condition, a second measurement condition, and a reference measurement condition; the determining the corresponding target flatband voltage of the target device under each measurement condition includes: determining a first target flatband voltage of the target device under the first measurement condition; the first measurement condition includes a measurement temperature greater than a temperature threshold and a measurement voltage less than a voltage threshold; determining a second target flatband voltage of the target device under the second measurement condition; the second measurement condition includes the measurement temperature greater than the temperature threshold and the measurement voltage greater than or equal to the voltage threshold; determining a reference flatband voltage of the target device under the reference measurement condition.

[0009] In an example embodiment of the present disclosure, before the determining the corresponding target flatband voltage of the target device under each measurement condition, the above method further includes: obtaining a plurality of semiconductor devices; determining a corresponding first flatband voltage of each semiconductor device under the first measurement condition; determining a corresponding second flatband voltage of each semiconductor device under the second measurement condition; and constructing a device voltage database according to the corresponding first flatband voltage and the corresponding second flatband voltage of each semiconductor device.

[0010] In an example embodiment of the present disclosure, the determining the corresponding first flatband voltage of each semiconductor device under the first measurement condition includes: obtaining a corresponding production process type of each semiconductor device; obtaining semiconductor devices belonging to the same production process type and generating a corresponding same-type device set; the same-type device set includes a plurality of same-type devices; and determining the corresponding first flatband voltage of each same-type device in the same-type device set.

[0011] In an example embodiment of the present disclosure, the determining the corresponding first flatband voltage of each same-type device in the same-type device set includes: determining a corresponding first initial flatband voltage of each same-type device under the first measurement condition; and determining the first flatband voltage according to the obtained first initial flatband voltage.

[0012] In an example embodiment of the present disclosure, the plurality of semiconductor devices each have a different production process type; and the determining of the first flat band voltage corresponding to each of the semiconductor devices under the first measurement condition comprises: performing the following operation on each of the plurality of semiconductor devices: applying the first measurement condition to the semiconductor device, so that mobile charges in the semiconductor device move to the gate oxide layer side; after a preset time interval, reducing the measurement temperature in the first measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; and taking the flat band voltage of the semiconductor device at the second measurement temperature as the first flat band voltage.

[0013] In an example embodiment of the present disclosure, the determining of the second flat band voltage corresponding to each of the semiconductor devices under the second measurement condition comprises: obtaining at least one same-type device set determined based on the production process type; the same-type device set comprises a plurality of same-type devices; and determining the second flat band voltage corresponding to each of the plurality of same-type devices included in each of the same-type device sets.

[0014] In an example embodiment of the present disclosure, the determining of the second flat band voltage corresponding to each of the same-type devices in each of the same-type device sets comprises: determining a second initial flat band voltage corresponding to each of the same-type devices under the second measurement condition; and determining the second flat band voltage according to the obtained plurality of second initial flat band voltages.

[0015] In an example embodiment of the present disclosure, the plurality of semiconductor devices each have a different production process type; and the determining of the second flat band voltage corresponding to each of the semiconductor devices under the second measurement condition comprises: performing the following operation on each of the plurality of semiconductor devices: applying the second measurement condition to the semiconductor device, so that mobile charges in the semiconductor device move to the fixed oxide layer side; after a preset time interval, reducing the measurement temperature in the second measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; and taking the flat band voltage of the semiconductor device at the second measurement temperature as the second flat band voltage.

[0016] In an example embodiment of the present disclosure, the method further comprises: determining a target production process type corresponding to the target device; determining whether the target production process type is contained in a pre-constructed device voltage database; if the target production process type is contained in the device voltage database, obtaining the first target flat band voltage and the second target flat band voltage from the device voltage database; and if the target production process type is not contained in the device voltage database, respectively applying a first measurement condition and a second measurement condition to the target device to obtain the first target flat band voltage and the second target flat band voltage.

[0017] In an example embodiment of the present disclosure, the determining the reference flat band voltage of the target device under the reference measurement condition comprises: configuring a measurement temperature of the target device as a reference test temperature value; configuring a measurement voltage of the target device as a reference test voltage value; and determining a flat band voltage of the target device under the joint action of the reference test temperature value and the reference test voltage value as the reference flat band voltage.

[0018] In an example embodiment of the present disclosure, the target flat band voltage comprises a reference flat band voltage, a first target flat band voltage and a second target flat band voltage; and the determining the charge position of the mobile charge in the target device based on the voltage distance correlation rule and at least one of the target flat band voltages comprises: determining a gate oxide layer thickness of a gate oxide layer in the target device; and determining the charge position of the mobile charge according to the gate oxide layer thickness, the reference flat band voltage, the first target flat band voltage and the second target flat band voltage, and in combination with the voltage distance correlation rule.

[0019] In an example embodiment of the present disclosure, the charge position comprises a separation distance of the mobile charge from a gate of the target device.

[0020] According to a second aspect of the present disclosure, there is provided a charge position determination apparatus, comprising: a measurement condition configuration module configured to configure at least one measurement condition acting on a target device; a flat band voltage determination module configured to determine a target flat band voltage corresponding to the target device under each of the measurement conditions; an association rule acquisition module configured to acquire a pre-configured voltage distance association rule; the voltage distance association rule comprising an association relationship between a charge position and a flat band voltage; and a charge position determination module configured to determine a charge position of a mobile charge in the target device based on the voltage distance association rule and at least one of the target flat band voltages.

[0021] In an example embodiment of the present disclosure, the measurement conditions include a first measurement condition, a second measurement condition, and a reference measurement condition; the flat band voltage determination module includes a flat band voltage determination unit configured to: determine a first target flat band voltage of the target device under the first measurement condition; the first measurement condition includes a measurement temperature greater than a temperature threshold and a measurement voltage less than a voltage threshold; determine a second target flat band voltage of the target device under the second measurement condition; the second measurement condition includes the measurement temperature greater than the temperature threshold and the measurement voltage greater than or equal to the voltage threshold; and determine a reference flat band voltage of the target device under the reference measurement condition.

[0022] In an example embodiment of the present disclosure, the charge location determination apparatus further includes a database construction module configured to: obtain a plurality of semiconductor devices; determine a first flat band voltage corresponding to each of the semiconductor devices under the first measurement condition; determine a second flat band voltage corresponding to each of the semiconductor devices under the second measurement condition; and construct a device voltage database according to the first flat band voltage and the second flat band voltage corresponding to each of the plurality of semiconductor devices.

[0023] In an example embodiment of the present disclosure, the database construction module includes a first voltage determination module configured to: obtain a production process type corresponding to each of the plurality of semiconductor devices; obtain semiconductor devices belonging to a same production process type and generate a same-type device set corresponding thereto; the same-type device set includes a plurality of same-type devices; and determine the first flat band voltage corresponding to the plurality of same-type devices in the same-type device set.

[0024] In an example embodiment of the present disclosure, the first voltage determination module includes a first voltage determination unit configured to: determine a first initial flat band voltage corresponding to each of the same-type devices under the first measurement condition; and determine the first flat band voltage according to the obtained plurality of first initial flat band voltages.

[0025] In an example embodiment of the present disclosure, each of the plurality of semiconductor devices has a different production process type; and the first voltage determination unit includes a first voltage determination sub-unit configured to: perform the following operations on each of the plurality of semiconductor devices: apply the first measurement condition to the semiconductor device so that mobile charges in the semiconductor device move to a gate oxide layer side; after a preset time interval, reduce a measurement temperature in the first measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; and take a flat band voltage of the semiconductor device under the second measurement temperature as the first flat band voltage.

[0026] In an example embodiment of the present disclosure, the database construction module comprises a second voltage determination module configured to: obtain at least one same-type device set determined based on the production process type; the same-type device set comprises a plurality of same-type devices; and determine the second flat band voltage corresponding to each same-type device in the same-type device set.

[0027] In an example embodiment of the present disclosure, the second voltage determination module comprises a second voltage determination unit configured to: determine a second initial flat band voltage corresponding to each same-type device under the second measurement condition; and determine the second flat band voltage based on the obtained second initial flat band voltages.

[0028] In an example embodiment of the present disclosure, each of the plurality of semiconductor devices has a different production process type; the second voltage determination unit comprises a second voltage determination subunit configured to: perform the following operations on each semiconductor device one by one: apply the second measurement condition to the semiconductor device so that the mobile charge in the semiconductor device moves to the fixed oxide layer side; after a preset time interval, reduce the measurement temperature in the second measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; and take the flat band voltage of the semiconductor device at the second measurement temperature as the second flat band voltage.

[0029] In an example embodiment of the present disclosure, the charge position determination apparatus further comprises a voltage determination module configured to: determine a target production process type corresponding to the target device; determine whether the target production process type is included in the pre-constructed device voltage database; if the target production process type is included in the device voltage database, obtain the first target flat band voltage and the second target flat band voltage from the device voltage database; and if the target production process type is not included in the device voltage database, apply a first measurement condition and a second measurement condition to the target device respectively to obtain the first target flat band voltage and the second target flat band voltage.

[0030] In an example embodiment of the present disclosure, the reference voltage determination module comprises a reference voltage determination unit configured to: configure the measurement temperature of the target device as a reference test temperature value; configure the measurement voltage of the target device as a reference test voltage value; and determine the flat band voltage of the target device under the joint action of the reference test temperature value and the reference test voltage value as the reference flat band voltage.

[0031] In an example embodiment of the present disclosure, the target flat band voltages include a reference flat band voltage, a first target flat band voltage and a second target flat band voltage; and the charge position determination module includes a charge position determination unit configured to determine a gate oxide layer thickness of a gate oxide layer in the target device, and determine the charge position of the mobile charge according to the gate oxide layer thickness, the reference flat band voltage, the first target flat band voltage and the second target flat band voltage, and in combination with the voltage distance correlation rule.

[0032] According to a third aspect of the present disclosure, an electronic device is provided, including a processor, and a memory having computer readable instructions stored thereon, the computer readable instructions being executed by the processor to implement the charge position determination method according to any one of the above.

[0033] According to a fourth aspect of the present disclosure, a computer readable storage medium is provided, having a computer program stored thereon, the computer program being executed by a processor to implement the charge position determination method according to any one of the above.

[0034] The technical solutions provided by the present disclosure can include the following beneficial effects:

[0035] The charge position determination method in the example embodiments of the present disclosure, on one hand, determines the charge position of the mobile charge in the semiconductor device by determining the flat band voltages of the semiconductor device under different measurement conditions, and combining the correlation between the charge distance of the mobile charge and the flat band voltage in the semiconductor device. On the other hand, the migration trend of the mobile charge in the semiconductor device is further analyzed according to the determined charge position of the mobile charge, so as to determine whether the threshold voltage of the semiconductor device is stable.

[0036] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0037] The accompanying drawings, which are incorporated into and form part of the specification, illustrate embodiments consistent with the present disclosure and, together with the specification, serve to explain the principles of the present disclosure. It is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor. In the drawings:

[0038] Figure 1 The structure of the gate oxide layer in the semiconductor device is schematically shown;

[0039] Figure 2 The flowchart of the charge position determination method according to the example embodiments of the present disclosure is schematically shown;

[0040] Figure 3 schematic diagram of charge positions under a first measurement condition is schematically shown according to an example embodiment of the present disclosure;

[0041] Figure 4 schematic diagram of charge positions under a second measurement condition is schematically shown according to an example embodiment of the present disclosure;

[0042] Figure 5 a flowchart of determining a first target flatband voltage and a second target flatband voltage of a target device is schematically shown according to an example embodiment of the present disclosure;

[0043] Figure 6 a block diagram of a charge position determination apparatus is schematically shown according to an example embodiment of the present disclosure;

[0044] Figure 7 a block diagram of an electronic device is schematically shown according to an example embodiment of the present disclosure;

[0045] Figure 8 a schematic diagram of a computer readable storage medium is schematically shown according to an example embodiment of the present disclosure. DETAILED DESCRIPTION

[0046] Example embodiments now will be described more fully hereinafter with reference to the accompanying drawings. Example embodiments, however, can be implemented in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example embodiments to those skilled in the art. Like reference numerals refer to like elements throughout the several views.

[0047] Moreover, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the techniques described herein can be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail in order to avoid obscuring aspects of the disclosure.

[0048] The block diagrams in the drawings show functions and functionality as they can be implemented in software or computer programs. Implementations are operational with numerous other general purpose or special purpose computing system environments or configurations. Examples of well- known computing systems, environments, and / or configurations that can be suitable for use with example embodiments include but are not limited to one or more personal computers, server computers, handheld or laptop devices, multiprocessor systems, microprocessor-based systems, programmable consumer electronics, network PCs, minicomputers, processor-based systems, distributed computing environments that include any of the above systems or devices, and the like.

[0049] In actual fabricated MOS devices, a large amount of charge exists in the gate oxide layer, as referenced. Figure 1 , Figure 1 A schematic diagram of the gate oxide layer in a semiconductor device is shown. The gate oxide layer of a semiconductor device may include the following types of charges: (1) Interface trap charges: Interface trap charges are located in fast interface states, from... Figure 1 It is known that the Si-SiO2 interface is located at some energy levels in the silicon bandgap, which can undergo rapid charge exchange with the substrate (less than the channel charge velocity), and is therefore called fast interface state. (2) Fixed oxide charge and oxide trap charge, these charges remain in a fixed position under bias-temperature stress. (3) Movable ion charge, which can migrate in the oxide layer under certain temperature and bias voltage, causing the threshold voltage to be unstable, which has a great impact on the reliability of the device.

[0050] Based on this, in this example embodiment, a method for determining the charge position is first provided. The method for determining the charge position of this disclosure can be implemented using a server or using a terminal device. The terminal described in this disclosure may include mobile terminals such as mobile phones, tablets, laptops, handheld computers, and personal digital assistants (PDAs), as well as fixed terminals such as desktop computers. Figure 2 A schematic diagram illustrating a charge position determination method flow according to some embodiments of the present disclosure is provided. Reference Figure 2 The method for determining the location of the charge may include the following steps:

[0051] Step S210: Configure at least one measurement condition to act on the target device.

[0052] According to some exemplary embodiments of this disclosure, the target device may be a semiconductor device awaiting measurement evaluation. The measurement conditions may be specific limiting conditions configured for the measurement environment in order to measure the flat-band voltage of the target device.

[0053] To determine the flat-band voltage of a target device, measurement conditions applied to the target device can be configured first. These measurement conditions may include one or more parameters. For example, the measurement conditions may specifically define the measurement temperature, measurement voltage, or other influencing factors of the target device. By configuring different measurement parameter values ​​for the measurement environment of the target device, various different measurement conditions can be generated.

[0054] Step S220: Determine the target flat band voltage of the target device under each measurement condition.

[0055] According to some exemplary embodiments of this disclosure, the target flat-band voltage may be the flat-band voltage corresponding to the target device.

[0056] After the measurement condition configuration is completed, the target device can be subjected to flat band voltage measurement under different measurement conditions. For example, the measurement conditions can include a reference measurement condition, a first measurement condition in which a partial measurement factor value is higher than the reference measurement condition, and a second measurement condition in which a partial measurement factor value is lower than the reference measurement condition. The respective flat band voltages of the target device under different measurement conditions are determined as different target flat band voltages.

[0057] In step S230, a pre-configured voltage-distance correlation rule is obtained, and the voltage-distance correlation rule includes an association between the charge position and the flat band voltage.

[0058] According to some example embodiments of the present disclosure, the voltage-distance correlation rule can be a voltage-distance correlation relationship, specifically, an association between the flat band voltage corresponding to the target device and the charge position. The charge position can be the distance of the mobile charge in the target device from the gate interface.

[0059] The voltage-distance correlation relationship can be an association between the charge position and the flat band voltage determined according to the performance of the semiconductor. It is found in the semiconductor production process that the mobile charge (i.e., mobile ion charge) in the semiconductor device can induce corresponding charges such as electrons or negatively charged ions on one side of the semiconductor device, and cause the semiconductor surface energy band to bend, contributing to the flat band voltage. Moreover, the degree of energy band bending caused by the mobile ion charge is related to the distance of the mobile ion charge from the silicon-silicon dioxide (Si-SiO2) interface, that is, the contribution of the mobile ion charge to the flat band voltage is related to the charge position, as shown in formula 1.

[0060]

[0061] wherein c ox may represent the gate oxide capacitance of the target device, d ox may represent the gate oxide thickness of the target device, and x may represent the distance of the mobile charge from the gate.

[0062] Since the mobile ion charge is usually concentrated in a certain area, that is, x in formula 1 is a determined value, the influence of the mobile ion charge on V FB is linear, and the positions of other excess charges in the gate oxide layer are fixed, so as long as the amount of other excess charges is unchanged, the contribution of other excess charges to V FB is determined. Based on the above rule, the voltage-distance correlation rule between the charge distance of the mobile charge and the flat band voltage can be determined.

[0063] In step S240, based on the voltage-distance correlation rule and at least one target flat band voltage, the charge position of the mobile charge in the target device is determined.

[0064] According to some example embodiments of the present disclosure, the mobile charge can be a mobile ionic charge contained in the target device. The charge position can be a specific position of the mobile ionic charge in a gate oxide layer of the target device.

[0065] According to the calculated target flat band voltage and the voltage distance correlation rule, the distance of the mobile charge in the target device from the gate in the gate oxide layer of the target device can be determined, i.e., the charge position of the mobile charge in the target device is determined.

[0066] According to the charge position determination method in the example embodiments, on the one hand, the flat band voltage of the semiconductor device under different measurement conditions is determined, and the correlation between the charge distance of the mobile charge in the semiconductor device and the flat band voltage is combined to determine the charge position of the mobile charge in the semiconductor device. On the other hand, according to the determined mobile charge position, the migration trend of the mobile charge in the semiconductor device is further analyzed, so as to determine whether the threshold voltage of the semiconductor device is stable.

[0067] In the following, the charge position determination method in the example embodiments will be further described.

[0068] In an example embodiment of the present disclosure, a first target flat band voltage of a target device under a first measurement condition is determined; the first measurement condition includes that a measurement temperature is greater than a temperature threshold and a measurement voltage is less than a voltage threshold; a second target flat band voltage of the target device under a second measurement condition is determined; the second measurement condition includes that the measurement temperature is greater than the temperature threshold and the measurement voltage is greater than or equal to the voltage threshold; and a reference flat band voltage of the target device under a reference measurement condition is determined.

[0069] The first measurement condition can be a measurement condition for measuring the flat band voltage of the target device, such as the first measurement condition including that the measurement temperature is greater than the temperature threshold and the measurement voltage is less than the voltage threshold. The first target flat band voltage can be the flat band voltage of the target device measured under the first measurement condition. The measurement temperature can be a temperature applied to the target device under a specific device measurement condition. The temperature threshold can be a pre-set temperature value. The measurement voltage can be an additional voltage applied to the target device under the corresponding device measurement condition. The voltage threshold can be a pre-set voltage value.

[0070] The second measurement condition can be another measurement condition for measuring the flat band voltage of the target device, such as the second measurement condition including that the measurement temperature is greater than the temperature threshold and the measurement voltage is greater than or equal to the voltage threshold. The second target flat band voltage can be the flat band voltage of the target device measured under the second measurement condition.

[0071] The reference measurement condition can be a measurement condition in which the measurement temperature is in a reference measurement temperature value range and the measurement voltage is in a reference measurement voltage value range, for example, the reference measurement condition can be an environmental condition corresponding to a general user using a semiconductor device. The reference flat band voltage can be a flat band voltage measured by the target device under the reference measurement condition.

[0072] To determine the charge position of the mobile charge in the gate oxide layer of the target device, the flat band voltage corresponding to the target device can be calculated first, and the determination of the charge position can be based on the flat band voltage. The target device can be placed in a first measurement condition, and the first measurement condition can include the following definition for the measurement environment: the measurement temperature is greater than a temperature threshold and the measurement voltage is less than a voltage threshold, that is, the target device is subjected to high-temperature negative bias treatment. After the first measurement condition is applied to the target device, the flat band voltage of the target device under the first measurement condition, that is, the first target flat band voltage, can be measured, denoted as Baseline1.

[0073] After obtaining the first target flat band voltage, a second measurement condition can be applied to the target device, and the second measurement condition includes that the measurement temperature is greater than the temperature threshold and the measurement voltage is greater than or equal to the voltage threshold, that is, the target device is subjected to high-temperature positive bias treatment. The flat band voltage of the target device under the second measurement condition, that is, the second target flat band voltage, can be measured, denoted as Baseline2.

[0074] After obtaining the first target flat band voltage and the second target flat band voltage, the flat band voltage corresponding to the target device under the reference measurement condition can be measured, and the reference measurement condition can be a measurement condition in which the measurement temperature is in a pre-set temperature range and the measurement voltage is in a voltage range. Under the reference measurement condition, the reference flat band voltage corresponding to the target device can be measured, denoted as V FB By the above steps, the target flat band voltage of the target device under different measurement conditions can be determined.

[0075] In an exemplary embodiment of the present disclosure, a plurality of semiconductor devices are obtained; a first flat band voltage corresponding to each semiconductor device under a first measurement condition is determined; a second flat band voltage corresponding to each semiconductor device under a second measurement condition is determined; and a device voltage database is constructed according to the first flat band voltage and the second flat band voltage corresponding to each semiconductor device in the plurality of semiconductor devices.

[0076] The semiconductor device can be a device prepared in a semiconductor production and manufacturing process. The first flat band voltage can be a flat band voltage measured by the semiconductor device under the first measurement condition. The second flat band voltage can be a flat band voltage measured by the semiconductor device under the second measurement condition. The device voltage database can be a database composed of the flat band voltages measured by the plurality of semiconductor devices under different measurement conditions and other basic information of the devices.

[0077] Before determining the flat band voltage of the target device, a device voltage database can be constructed in advance, and the device voltage database can include flat band voltage values corresponding to a plurality of semiconductor devices. Specifically, the device voltage database can be obtained by the following steps:

[0078] First, a plurality of semiconductor devices can be obtained. For the obtained plurality of semiconductor devices, a first measurement condition can be applied to each semiconductor device to measure a first flat band voltage corresponding to each semiconductor device under the first measurement condition. The first measurement condition is also a high-temperature negative bias condition, i.e., the semiconductor device is subjected to a high-temperature negative bias treatment. Second, a second measurement condition can be applied to each semiconductor device, and the second measurement condition includes a measurement temperature greater than a temperature threshold and a measurement voltage greater than or equal to a voltage threshold, i.e., the semiconductor device is subjected to a high-temperature positive bias treatment, to obtain a second flat band voltage corresponding to each semiconductor device.

[0079] After obtaining the first flat band voltage and the second flat band voltage corresponding to each semiconductor device, a device voltage database can be constructed based on the first flat band voltage and the second flat band voltage of all semiconductor devices, so that the flat band voltage corresponding to a certain semiconductor device can be directly obtained from the device voltage database in the future.

[0080] As can be easily understood by those skilled in the art, in other exemplary embodiments of the present disclosure, the specific number of measurement conditions can also be set, such as 3, 5, 10, etc., and then the device voltage database can be constructed according to the flat band voltage under different measurement conditions, and the target flat band voltage of the target device can be calculated according to the flat band voltage under different measurement conditions, and the charge position can be located. The above-mentioned solutions all fall within the scope of the technology protected by the present disclosure.

[0081] In an exemplary embodiment of the present disclosure, determining the first flat band voltage corresponding to each semiconductor device under the first measurement condition includes: obtaining a production process type corresponding to each of the plurality of semiconductor devices; obtaining semiconductor devices belonging to the same production process type and generating a corresponding same-type device set; the same-type device set includes a plurality of same-type devices; and determining the first flat band voltage corresponding to the plurality of same-type devices in the same-type device set.

[0082] The production process type can be a process type corresponding to the semiconductor device in the production and manufacturing process. The production process can be the production and manufacturing process of the semiconductor device. The same-type device set can be a device set composed of semiconductor devices having the same production process type. The same-type device can be a semiconductor device having the same production process type.

[0083] Before measuring the first flat band voltage corresponding to the semiconductor device, the production process type corresponding to each semiconductor device can be obtained. The production process of the semiconductor device can include front-end process (such as wafer manufacturing) and back-end process (such as packaging), and can specifically include wafer processing-oxidation-photolithography-etching-film deposition-interconnection-testing-packaging and other manufacturing steps. After obtaining the production process of each semiconductor device, the specific type of the production process can be determined, and whether there are semiconductor devices belonging to the same production process type can be determined.

[0084] If there are semiconductor devices belonging to the same production process type in the obtained plurality of semiconductor devices, the semiconductor devices can be divided into the same device set to obtain a corresponding same-type device set. The same-type device set contains a plurality of semiconductor devices with the same production process type, that is, same-type devices. For the same-type device set, the same-type devices contained in the set can correspond to the same first flat band voltage. That is, for semiconductor devices with the same production process type, only one flat band voltage calculation process is required, and multiple flat band voltage calculation processes are not required, which can avoid repeated calculation workload and effectively improve the calculation efficiency.

[0085] In an exemplary embodiment of the present disclosure, determining the first flat band voltage corresponding to the plurality of same-type devices in the same-type device set comprises: determining the first initial flat band voltage corresponding to each same-type device under the first measurement condition; and determining the first flat band voltage according to the obtained plurality of first initial flat band voltages.

[0086] The first initial flat band voltage can be the flat band voltage corresponding to each semiconductor device in the same-type device set under the first measurement condition.

[0087] For the determined same-type device set, the first initial flat band voltage corresponding to each same-type device in the same-type device set can be determined, that is, the first measurement condition is applied to each same-type device to obtain the first initial flat band voltage corresponding to each same-type device under the first measurement condition. In order to improve the accuracy of the flat band voltage value, after obtaining the plurality of first initial flat band voltages, the average value of the plurality of first initial flat band voltages can be calculated and processed, and the average value of the plurality of first initial flat band voltages is taken as the first flat band voltage corresponding to each same-type device in the same-type device set.

[0088] When determining the first flat band voltage corresponding to the same-type device in the same-type device set, as many semiconductor devices with the same production process type as possible can be selected as the data basis for measuring the first flat band voltage to improve the accuracy of the calculated first flat band voltage.

[0089] It should be noted that in some other exemplary embodiments of the present disclosure, the obtained plurality of first initial flat-band voltages can also be subjected to other processing operations to obtain the first flat-band voltage corresponding to the same type of device, for example, the median of the plurality of first initial flat-band voltages is taken as the first flat-band voltage; the mode of the plurality of first initial flat-band voltages is taken as the first flat-band voltage. Other similar determination methods also belong to the technical scope protected by the present disclosure.

[0090] In an exemplary embodiment of the present disclosure, the plurality of semiconductor devices each have different production process types; determining the first flat-band voltage corresponding to each semiconductor device under the first measurement condition comprises: performing the following operation on each semiconductor device in the plurality of semiconductor devices: applying the first measurement condition to the semiconductor device, so that the mobile charge in the semiconductor device moves to the gate oxide layer side; after a predetermined interval, reducing the measurement temperature in the first measurement condition from the initial first measurement temperature to the second measurement temperature; the second measurement temperature is less than the temperature threshold; the flat-band voltage of the semiconductor device at the second measurement temperature is taken as the first flat-band voltage.

[0091] Wherein, the gate oxide layer side can be the side of the semiconductor device close to the junction of the gate and the oxide layer, such as the side close to the Gate-Oxide junction. The first measurement temperature can be the measurement temperature initially applied to the semiconductor device under the first measurement condition. The second measurement temperature can be the measurement temperature obtained by cooling the first measurement temperature under the first measurement condition.

[0092] In the process of constructing the device voltage database, if the plurality of semiconductor devices obtained each have different production process types, the first flat-band voltage of each semiconductor device is calculated respectively. For each semiconductor device, the following operation is performed: after obtaining a semiconductor device, the first measurement condition is applied to the semiconductor device, for example, high-temperature negative constant voltage treatment is performed on the semiconductor device, that is, the measurement temperature applied to the semiconductor device is greater than the temperature threshold and the measurement voltage is less than the voltage threshold. Referring to Figure 3 , Figure 3 A schematic diagram of the position of the charge under the first measurement condition according to an exemplary embodiment of the present disclosure is schematically shown. Under the action of the first measurement condition, the mobile ionic charge in the semiconductor device will move to the gate oxide layer side (i.e. Gate-Oxide side).

[0093] When the mobile ion charge in the semiconductor device is about to move to the Gate-Oxide side, after a preset time interval, such as 10 minutes, the measurement voltage is kept unchanged, the environment in which the semiconductor device is located is subjected to a cooling process, and the initial first measurement temperature is reduced to a second measurement temperature, and the temperature value of the second measurement temperature is less than the temperature threshold value, for example, the first measurement temperature can be 200℃, and the second measurement temperature can be 0℃. After the cooling operation is completed, the flat band voltage of the semiconductor device at this time can be determined as the first flat band voltage of the semiconductor device.

[0094] In an exemplary embodiment of the present disclosure, determining the second flat band voltage corresponding to each semiconductor device under the second measurement condition comprises: obtaining at least one same-type device set determined based on the production process type; the same-type device set comprises a plurality of same-type devices; and determining the second flat band voltage corresponding to each same-type device in each same-type device set.

[0095] In determining the second flat band voltage of each semiconductor device under the second measurement condition, a same-type device set belonging to the same production process type can be obtained based on the production process type of each semiconductor device. Since the same-type devices in the same-type device set have the same production process, the second flat band voltage of the plurality of same-type devices in the set under the second measurement condition can be determined based on the same-type device set.

[0096] In an exemplary embodiment of the present disclosure, determining the second flat band voltage corresponding to each same-type device in each same-type device set comprises: determining the second initial flat band voltage corresponding to each same-type device under the second measurement condition; and determining the second flat band voltage according to the obtained plurality of second initial flat band voltages.

[0097] Among them, the second initial flat band voltage can be the flat band voltage corresponding to each semiconductor device in the same-type device set under the second measurement condition.

[0098] For each same-type device in the same-type device set, the second measurement condition can be applied to each same-type device to obtain the second initial flat band voltage corresponding to each same-type device under the second measurement condition. Similarly, in order to improve the accuracy of the measured second flat band voltage value, after obtaining a plurality of second initial flat band voltages, the average value of the plurality of second initial flat band voltages is calculated, and the average value of the plurality of second initial flat band voltages is taken as the second flat band voltage corresponding to each same-type device in the same-type device set, thereby improving the accuracy of the determined second flat band voltage.

[0099] For other calculation manners of determining the second flat band voltage according to the plurality of second initial flat band voltages, the determination process of the first flat band voltage has been described, and the present disclosure will not make further description here.

[0100] In an exemplary embodiment of the present disclosure, the plurality of semiconductor devices each have different production process types; determining the second flat band voltage corresponding to each semiconductor device under the second measurement condition comprises: performing the following operation on each semiconductor device in the plurality of semiconductor devices: applying the second measurement condition to the semiconductor device, so that the mobile charge in the semiconductor device moves to the fixed oxide layer side; after a preset time interval, reducing the measurement temperature in the second measurement condition from the initial first measurement temperature to the second measurement temperature; the second measurement temperature is less than the temperature threshold; the flat band voltage of the semiconductor device at the second measurement temperature is taken as the second flat band voltage.

[0101] The fixed oxide layer side can be a side of the semiconductor device close to the fixed oxide layer, for example, the fixed oxide layer side can be a side close to the Si-SiO2 junction.

[0102] For the plurality of semiconductor devices each having different production process types, the second flat band voltage of each semiconductor device can also be calculated respectively. For a semiconductor device, the second measurement condition is applied to the semiconductor device, for example, high temperature positive constant voltage treatment is performed on the semiconductor device, that is, the measurement temperature applied to the semiconductor device is greater than the temperature threshold and the measurement voltage is greater than or equal to the voltage threshold. Referring to Figure 4 , Figure 4 A schematic diagram of the charge position under the second measurement condition according to the exemplary embodiment of the present disclosure is schematically shown. Under the action of the second measurement condition, the mobile ion charge in the semiconductor device will move to the fixed oxide layer side (i.e. the Si-SiO2 side).

[0103] When the mobile ion charge in the semiconductor device moves to the Si-SiO2 side, after a preset time interval, such as 10 minutes, the environment of the semiconductor device is cooled to reduce the initial first measurement temperature to the second measurement temperature, and the temperature value of the second measurement temperature is less than the temperature threshold, for example, the first measurement temperature can be 200℃, and the second measurement temperature can be 0℃. After the cooling operation is completed, the flat band voltage of the semiconductor device at this time can be measured as the second flat band voltage of the semiconductor device.

[0104] After obtaining the first flat band voltage and the second flat band voltage of the plurality of semiconductor devices, a device voltage database can be constructed based on the first flat band voltage and the second flat band voltage of the semiconductor device and the device basic information of the semiconductor device, so as to be queried subsequently.

[0105] In an example embodiment of the present disclosure, a target production process type corresponding to a target device is determined; it is determined whether the target production process type is included in a pre-constructed device voltage database; if the target production process type is included in the device voltage database, a first target flat band voltage and a second target flat band voltage are obtained from the device voltage database; if the target production process type is not included in the device voltage database, a first measurement condition and a second measurement condition are applied to the target device respectively to obtain the first target flat band voltage and the second target flat band voltage.

[0106] Reference Figure 5 , Figure 5 A flowchart for determining a first target flat band voltage and a second target flat band voltage of a target device according to an example embodiment of the present disclosure is schematically shown. In step S510, a target device is obtained. In step S520, after the target device is obtained, a target production process type corresponding to the target device can be determined first. In step S530, it is determined whether the target production process type is included in a device voltage database.

[0107] If the target production process type is included in the device voltage database, it is considered that a semiconductor device of the same type exists in the device voltage database in step S540, and thus the first target flat band voltage and the second target flat band voltage of the semiconductor device can be directly obtained from the device voltage database. If the target production process type is not included in the device voltage database, a first measurement condition and a second measurement condition are applied to the target device respectively in step S550, and the first target flat band voltage corresponding to the target device is calculated under the first measurement condition; the second target flat band voltage of the target device is calculated under the second measurement condition.

[0108] Through the above processing steps, the determination efficiency of the first target flat band voltage and the second target flat band voltage of the target device can be improved.

[0109] In an example embodiment of the present disclosure, a reference flat band voltage of a target device under a reference measurement condition is determined, including: configuring a measurement temperature of the target device as a reference test temperature value; configuring a measurement voltage of the target device as a reference test voltage value; and determining a flat band voltage of the target device under the joint action of the reference test temperature value and the reference test voltage value as the reference flat band voltage.

[0110] The reference test temperature value can be a temperature value in a reference test temperature interval. The reference test voltage value can be a voltage value in a reference test voltage interval.

[0111] In determining the reference flat band voltage of the target device, the reference measurement condition can be applied to the target device, the measurement temperature of the target device is configured to be a temperature value in the reference measurement temperature interval, and the measurement voltage of the target device is configured to be a voltage value in the reference measurement voltage interval. For example, the measurement temperature of the target device can be configured to be 25°C, and the measurement voltage can be configured to be 10V, etc. Under the reference measurement condition, the flat band voltage of the target device is measured to obtain the reference flat band voltage.

[0112] In an exemplary embodiment of the present disclosure, based on the reference flat band voltage, the first target flat band voltage and the second target flat band voltage, the charge position of the mobile charge in the target device is determined, comprising: determining the gate oxide layer thickness of the gate oxide layer in the target device; and determining the charge position of the mobile charge according to the gate oxide layer thickness, the reference flat band voltage, the first target flat band voltage and the second target flat band voltage, and combining the voltage distance correlation rule.

[0113] In the present disclosure, the gate oxide layer thickness can be the thickness of the gate oxide layer in the target device.

[0114] In an exemplary embodiment of the present disclosure, the charge position includes the interval distance of the mobile charge from the gate of the target device. In the present disclosure, the charge position to be determined is mainly the distance of the mobile charge from the gate in the gate oxide layer of the target device.

[0115] After the reference flat band voltage, the first target flat band voltage and the second target flat band voltage are determined, the gate oxide layer thickness of the target device can be further determined, and the charge position of the mobile charge in the gate oxide layer of the target device is determined by combining the voltage distance correlation rule. Specifically, the voltage distance correlation rule is shown in formula 2.

[0116]

[0117] In the formula, Baseline1 can be the first target flat band voltage of the target device; Baseline2 can be the second target flat band voltage of the target device; V FB may be the reference flat band voltage of the target device; d ox may represent the gate oxide layer thickness of the target device.

[0118] The distance value of the mobile charge from the gate in the gate oxide layer can be calculated by formula 2, i.e. the charge position of the mobile charge in the gate oxide layer is determined.

[0119] It should be noted that the terms "first", "second", etc. used in the present disclosure are only used to distinguish different measurement conditions, different (initial, target) flat band voltages, different measurement temperatures, etc. and should not impose any limitation on the present disclosure.

[0120] In summary, the charge position determination method of the present disclosure obtains at least one measurement condition acting on a target device; determines a corresponding target flat band voltage of the target device under each measurement condition; obtains a pre-configured voltage distance association rule; the voltage distance association rule includes an association relationship between a charge position and a flat band voltage; and determines a charge position of a mobile charge in the target device based on the voltage distance association rule and at least one target flat band voltage. In one aspect, by determining a first target flat band voltage, a second target flat band voltage and a reference voltage corresponding to the semiconductor device, and combining the association relationship between the mobile charge position and the flat band voltage in the semiconductor device, the charge position of the mobile charge in the semiconductor device is determined. In another aspect, according to the determined mobile charge position, the migration trend of the mobile charge in the semiconductor device is further analyzed, so as to determine whether the threshold voltage of the semiconductor device is stable, so as to analyze the service life of the semiconductor device.

[0121] It should be noted that although the steps of the method in the present disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired result. In addition or alternatively, some steps can be omitted, a plurality of steps can be combined into one step, and / or one step can be divided into a plurality of steps, etc.

[0122] In addition, in the present example embodiment, a charge position determination apparatus is also provided. Referring to Figure 6 The charge position determination apparatus 600 can include a measurement condition configuration module 610, a flat band voltage determination module 620, an association rule obtaining module 630 and a charge position determination module 640.

[0123] Specifically, the measurement condition configuration module 610 is configured to configure at least one measurement condition acting on a target device; the flat band voltage determination module 620 is configured to determine a corresponding target flat band voltage of the target device under each measurement condition; the association rule obtaining module 630 is configured to obtain a pre-configured voltage distance association rule; the voltage distance association rule includes an association relationship between a charge position and a flat band voltage; and the charge position determination module 640 is configured to determine a charge position of a mobile charge in the target device based on the voltage distance association rule and at least one target flat band voltage.

[0124] In an example embodiment of the present disclosure, the measurement conditions include a first measurement condition, a second measurement condition, and a reference measurement condition; the flat band voltage determination module 620 includes a flat band voltage determination unit configured to: determine a first target flat band voltage of the target device under the first measurement condition; the first measurement condition includes a measurement temperature greater than a temperature threshold and a measurement voltage less than a voltage threshold; determine a second target flat band voltage of the target device under the second measurement condition; the second measurement condition includes the measurement temperature greater than the temperature threshold and the measurement voltage greater than or equal to the voltage threshold; and determine a reference flat band voltage of the target device under the reference measurement condition.

[0125] In an example embodiment of the present disclosure, the charge position determination apparatus 600 further includes a database construction module configured to: obtain a plurality of semiconductor devices; determine a first flat band voltage corresponding to each of the plurality of semiconductor devices under a first measurement condition; determine a second flat band voltage corresponding to each of the plurality of semiconductor devices under a second measurement condition; and construct a device voltage database according to the first flat band voltage and the second flat band voltage corresponding to each of the plurality of semiconductor devices.

[0126] In an example embodiment of the present disclosure, the database construction module includes a first voltage determination module configured to: obtain a production process type corresponding to each of the plurality of semiconductor devices; obtain semiconductor devices belonging to a same production process type and generate a same-type device set corresponding thereto; the same-type device set includes a plurality of same-type devices; and determine a first flat band voltage corresponding to each of the plurality of same-type devices in the same-type device set.

[0127] In an example embodiment of the present disclosure, the first voltage determination module includes a first voltage determination unit configured to: determine a first initial flat band voltage corresponding to each of the same-type devices under the first measurement condition; and determine the first flat band voltage according to the obtained plurality of first initial flat band voltages.

[0128] In an example embodiment of the present disclosure, the plurality of semiconductor devices have different production process types; the first voltage determination unit includes a first voltage determination sub-unit configured to: perform the following operations on each of the plurality of semiconductor devices: apply the first measurement condition to the semiconductor device so that the mobile charge in the semiconductor device moves to the gate oxide layer side; after a preset time interval, reduce the measurement temperature in the first measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; and take the flat band voltage of the semiconductor device under the second measurement temperature as the first flat band voltage.

[0129] In an example embodiment of the present disclosure, the database construction module comprises a second voltage determination module configured to: obtain at least one same-type device set determined based on the production process type; the same-type device set comprises a plurality of same-type devices; and determine a second flat band voltage corresponding to each same-type device in the same-type device set.

[0130] In an example embodiment of the present disclosure, the second voltage determination module comprises a second voltage determination unit configured to: determine a second initial flat band voltage corresponding to each same-type device under a second measurement condition; and determine the second flat band voltage based on the obtained second initial flat band voltages.

[0131] In an example embodiment of the present disclosure, the plurality of semiconductor devices have different production process types; and the second voltage determination unit comprises a second voltage determination subunit configured to: perform the following operations on each semiconductor device in the plurality of semiconductor devices: apply a second measurement condition to the semiconductor device, so that the mobile charge in the semiconductor device moves to the fixed oxide layer side; after a preset time interval, reduce the measurement temperature in the second measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than a temperature threshold; and determine the flat band voltage of the semiconductor device at the second measurement temperature as the second flat band voltage.

[0132] In an example embodiment of the present disclosure, the charge position determination apparatus 600 further comprises a voltage determination module configured to: determine a target production process type corresponding to the target device; determine whether the target production process type is included in the pre-constructed device voltage database; if the target production process type is included in the device voltage database, obtain a first target flat band voltage and a second target flat band voltage from the device voltage database; and if the target production process type is not included in the device voltage database, apply a first measurement condition and a second measurement condition to the target device respectively to obtain the first target flat band voltage and the second target flat band voltage.

[0133] In an example embodiment of the present disclosure, the flat band voltage determination unit comprises a reference voltage determination subunit configured to: configure the measurement temperature of the target device as a reference test temperature value; configure the measurement voltage of the target device as a reference test voltage value; and determine a reference flat band voltage of the target device under the joint action of the reference test temperature value and the reference test voltage value.

[0134] In an example embodiment of the present disclosure, the charge position determination module 640 comprises a charge position determination unit configured to: determine a gate oxide layer thickness of a gate oxide layer in the target device; and determine the charge position of the mobile charge based on the gate oxide layer thickness, the reference flat band voltage, the first target flat band voltage, and the second target flat band voltage, in combination with a voltage distance correlation rule.

[0135] The specific details of the virtual modules of the charge position determination apparatuses in the above embodiments have been described in detail in the corresponding charge position determination methods, and thus will not be described here again.

[0136] It should be noted that, although several modules or units of the charge position determination apparatus are mentioned in the above detailed description, such division is not mandatory. Indeed, according to embodiments of the present disclosure, features and functionalities of two or more modules or units described above can be embodied in one module or unit. Conversely, features and functionalities of one module or unit described above can be further divided into several modules or units.

[0137] Furthermore, in exemplary embodiments of the present disclosure, an electronic device capable of implementing the above method is also provided.

[0138] Those skilled in the art can understand that various aspects of the present disclosure can be implemented as a system, a method or a program product. Therefore, various aspects of the present disclosure can be embodied as a complete hardware embodiment, a complete software embodiment (including firmware, microcode, etc.), or an embodiment combining hardware and software aspects, which can be collectively referred to as "circuitry", "module" or "system" here.

[0139] The electronic device 700 according to such embodiments of the present disclosure will be described below with reference to Figure 7 Figure 7 The display electronic device 700 is merely an example and should not bring any limitation to the functions and use range of the embodiments of the present disclosure.

[0140] As shown in Figure 7 The electronic device 700 is in the form of a general computing device. The components of the electronic device 700 can include, but are not limited to, the above-mentioned at least one processing unit 710, the above-mentioned at least one storage unit 720, a bus 730 connecting different system components (including the storage unit 720 and the processing unit 710), and a display unit 740.

[0141] The storage unit stores program codes which can be executed by the processing unit 710, so that the processing unit 710 performs the steps according to various exemplary embodiments of the present disclosure described in the above "Exemplary Method" section of the present specification.

[0142] The storage unit 720 can include a readable medium in the form of a volatile storage unit, such as a random access memory (RAM) 721 and / or a cache memory 722, and can further include a read-only memory (ROM) 723.

[0143] ​Storage 720 can include a number of storage media including, but not limited to, magnetic or optical disks or tapes and semiconductor memory, which can be accessed via a storage controller or interface 725. In some embodiments, storage 720 can include a removable media device which can be loaded into the electronic device 700.

[0144] Bus 730 can represent one or more of several types of bus structures, including a storage bus or bus for storage controller, a peripheral bus, a graphics acceleration port, a processor bus, or a local bus using any of a variety of bus architectures.

[0145] Electronic device 700 can also communicate with one or more external devices 770 such as a keyboard or pointing device, using one or more communication interfaces 750. Communication interfaces 750 can also enable electronic device 700 to communicate with one or more devices that enable user interaction with electronic device 700 (for example, remote control devices) and / or communication with one or more other computing devices. Other exemplary communication interfaces 750 include a wireless communication interface to communicate with one or more wireless devices using techniques including, but not limited to, Bluetooth®, 3G, 4G, and Wi-Fi®. Such communication can enable interaction with electronic device 700 by one or more mobile devices. Electronic device 700 can also communicate with one or more networks (for example, a local area network (LAN), a wide area network (WAN), and / or the Internet) via network adapter 760. As illustrated, network adapter 760 can communicate with the other components of electronic device 700 via bus 730. It should be understood that although not shown, other hardware and / or software components that can be used in conjunction with electronic device 700 can include, but are not limited to, microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data archival storage systems, etc.

[0146] Those skilled in the art will readily understand that the example embodiments described herein can be implemented by software and / or by hardware coupled with software, as described above. As such, the technical solutions according to the embodiments of the present disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (which can be a CD-ROM, a USB flash disk, a mobile hard disk, or the like) or a network, and includes a number of instructions to enable a computing device (which can be a personal computer, a server, a terminal device, or a network device, etc.) to execute the methods according to the embodiments of the present disclosure.

[0147] In exemplary embodiments of the present disclosure, a computer readable storage medium having stored thereon a program product capable of implementing the above-described method of the specification is also provided. In some possible embodiments, various aspects of the present application can also be implemented in the form of a program product including program code, which, when run on a terminal device, causes the terminal device to perform the steps described in the above "Exemplary Method" section according to various exemplary embodiments of the present application.

[0148] Reference Figure 8 As shown, a program product 800 for implementing the above-described method according to embodiments of the present application is described, which can take the form of a portable compact disc read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present application is not limited thereto, and in the present document, the readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus or device.

[0149] The program product can take any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium, for example, can be, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus or device, or any combination thereof. More specific examples (non-exhaustive list) of the readable storage medium include an electrical connection having one or more wires, a portable disc, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.

[0150] The computer readable signal medium can include a data signal propagated in baseband or propagated as a carrier wave, in which readable program code is carried. Such propagated data signal can take various forms, including but not limited to electromagnetic signal, optical signal or any suitable combination thereof. The readable signal medium can also be any readable medium other than the readable storage medium, which can send, propagate or transmit a program for use by or in conjunction with an instruction execution system, apparatus or device.

[0151] The program code contained on the readable medium can be transmitted using any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination thereof.

[0152] The program code may be implemented in any of various ways, including procedure-based, narrative-based, object-based, and / or architectural-based versions. In procedure-based implementations, the program code is implemented in a series of isolated procedures, which rely primarily on extrinsic (or global) variables to communicate with one another. In narrative-based implementations, the program code is implemented at various levels by an interpreter or virtual machine. In object-based versions, the program code is implemented as a series of objects, which interact to perform the functionality of the present application. In architectural-based versions, the program code is implemented based on a component model, which organizes functionality into components that are interconnected to achieve the functionality of the present application.

[0153] Furthermore, the above-described diagrams are only schematic and are non-limiting. As such, the present application is intended to encompass all changes and modifications of the herein described methods which do not constitute departures from the true spirit and scope of the application. For example, the order of the steps of the methods can be modified, and the use of different programming languages and / or different computer systems can be utilized. Also for example, each of the above-described processes could be performed synchronously or asynchronously.

[0154] Other embodiments of the present disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known use or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.

[0155] It is to be understood that the present disclosure is not limited to the precise construction described and as shown in the attached drawings, and that various modifications and changes can be effected thereon without departing from the scope of the application. The scope of the application should be determined by the following claims.

Claims

1. A method for determining a charge position, comprising: configuring at least one measurement condition for a target device; determining a target flat band voltage of the target device under each of the measurement conditions; obtaining a pre-configured voltage-distance correlation rule, the voltage-distance correlation rule comprising a correlation between a charge position and a flat band voltage; determining a charge position of a mobile charge in the target device based on the voltage-distance correlation rule and at least one of the target flat band voltages; wherein the target flat band voltage comprises a reference flat band voltage, a first target flat band voltage, and a second target flat band voltage; and wherein determining the charge position of the mobile charge in the target device based on the voltage-distance correlation rule and at least one of the target flat band voltages comprises: determining a gate oxide thickness of a gate oxide layer in the target device; determining the charge position of the mobile charge based on the gate oxide thickness, the reference flat band voltage, the first target flat band voltage, the second target flat band voltage, and the voltage-distance correlation rule; and wherein the voltage-distance correlation rule is represented by Equation 2.

2. The method of claim 1, wherein the measurement condition comprises a first measurement condition, a second measurement condition, and a reference measurement condition; and wherein determining a target flat band voltage of the target device under each of the measurement conditions comprises: determining a first target flat band voltage of the target device under the first measurement condition, the first measurement condition comprising a measurement temperature greater than a temperature threshold and a measurement voltage less than a voltage threshold; determining a second target flat band voltage of the target device under the second measurement condition, the second measurement condition comprising the measurement temperature greater than the temperature threshold and the measurement voltage greater than or equal to the voltage threshold; and determining a reference flat band voltage of the target device under the reference measurement condition.

3. The method of claim 2, wherein prior to determining a target flat band voltage of the target device under each of the measurement conditions, the method further comprises: obtaining a plurality of semiconductor devices; determining a first flat band voltage of each of the semiconductor devices under the first measurement condition; determining a second flat band voltage of each of the semiconductor devices under the second measurement condition; and constructing a device voltage database based on the first flat band voltage and the second flat band voltage of each of the semiconductor devices.

4. The method of claim 3, wherein determining a first flat band voltage of each of the semiconductor devices under the first measurement condition comprises: obtaining a production process type of each of the semiconductor devices; obtaining semiconductor devices belonging to a same production process type and generating a same-type device set corresponding to the semiconductor devices, the same-type device set comprising a plurality of same-type devices; and determining the first flat band voltage of each of the same-type devices in the same-type device set.

5. The method of claim 4, wherein ​ ​ ​ ​ ​ Equation 2 wherein Baseline1 is the first target flat band voltage of the target device; Baseline2 is the second target flat band voltage of the target device; V FB is the baseline flat band voltage of the target device; d ox represents the gate oxide thickness of the target device. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The determining the first flat band voltage corresponding to each of the plurality of same-type devices in the same-type device set comprises: determining a first initial flat band voltage corresponding to each of the plurality of same-type devices under the first measurement condition; determining the first flat band voltage according to the obtained first initial flat band voltages.

6. The method of claim 3, wherein: the plurality of semiconductor devices have different production process types; the determining a first flat band voltage corresponding to each of the plurality of semiconductor devices under the first measurement condition further comprises: performing the following operations on each of the plurality of semiconductor devices: applying the first measurement condition to the semiconductor device, so that the mobile charge in the semiconductor device moves to the gate oxide layer side; after a preset time interval, reducing the measurement temperature in the first measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; taking the flat band voltage of the semiconductor device at the second measurement temperature as the first flat band voltage.

7. The method of claim 4, wherein: the determining a second flat band voltage corresponding to each of the plurality of semiconductor devices under the second measurement condition comprises: obtaining at least one same-type device set determined based on the production process type; the same-type device set comprises a plurality of same-type devices; determining the second flat band voltage corresponding to each of the plurality of same-type devices in each of the same-type device sets.

8. The method of claim 7, wherein: the determining the second flat band voltage corresponding to each of the plurality of same-type devices in each of the same-type device sets comprises: determining a second initial flat band voltage corresponding to each of the plurality of same-type devices under the second measurement condition; determining the second flat band voltage according to the obtained second initial flat band voltages.

9. The method of claim 3, wherein: the plurality of semiconductor devices have different production process types; the determining a second flat band voltage corresponding to each of the plurality of semiconductor devices under the second measurement condition further comprises: performing the following operations on each of the plurality of semiconductor devices: applying the second measurement condition to the semiconductor device, so that the mobile charge in the semiconductor device moves to the fixed oxide layer side; after a preset time interval, reducing the measurement temperature in the second measurement condition from an initial first measurement temperature to a second measurement temperature; the second measurement temperature is less than the temperature threshold; taking the flat band voltage of the semiconductor device at the second measurement temperature as the second flat band voltage.

10. The method of claim 2, wherein: the method further comprises: determining a target production process type corresponding to the target device; determining whether the target production process type is included in a pre-constructed device voltage database; if the target production process type is included in the device voltage database, obtaining the first target flat band voltage and the second target flat band voltage from the device voltage database. If the device voltage database does not contain the target production process type, a first measurement condition and a second measurement condition are applied to the target device respectively to obtain the first target flat band voltage and the second target flat band voltage.

11. The method of claim 2, wherein The determining the reference flat band voltage of the target device under the reference measurement condition comprises: configuring a measurement temperature of the target device as a reference test temperature value; configuring a measurement voltage of the target device as a reference test voltage value; determining a flat band voltage of the target device under the joint action of the reference test temperature value and the reference test voltage value as the reference flat band voltage.

12. The method of claim 1, wherein The charge position comprises a separation distance of the mobile charge from a gate of the target device.

13. A charge position determination apparatus, comprising: a measurement condition configuration module configured to configure at least one measurement condition acting on a target device; a flat band voltage determination module configured to determine a corresponding target flat band voltage of the target device under each of the measurement conditions; an association rule acquisition module configured to acquire a pre-configured voltage distance association rule; the voltage distance association rule comprises an association relationship between a charge position and a flat band voltage; a charge position determination module configured to determine a charge position of a mobile charge in the target device in the target device based on the voltage distance association rule and at least one of the target flat band voltages; wherein the target flat band voltages comprise a reference flat band voltage, a first target flat band voltage and a second target flat band voltage; and the determining the charge position of the mobile charge in the target device in the target device based on the voltage distance association rule and at least one of the target flat band voltages comprises: determining a gate oxide layer thickness of a gate oxide layer in the target device; determining the charge position of the mobile charge according to the gate oxide layer thickness, the reference flat band voltage, the first target flat band voltage and the second target flat band voltage, and in combination with the voltage distance association rule; the voltage distance association rule is shown in formula 2:

14. An electronic device, comprising: Formula 2 Formula 3 wherein Baseline1 is the first target flat band voltage of the target device; Baseline2 is the second target flat band voltage of the target device; V FB is the baseline flat band voltage of the target device; d ox represents the gate oxide thickness of the target device. a processor; and a memory having computer readable instructions stored thereon, the computer readable instructions being executed by the processor to implement the charge position determination method according to any one of claims 1 to 12.

15. A computer readable storage medium having a computer program stored thereon, the computer program being executed by a processor to implement the charge position determination method according to any one of claims 1 to 12. ​ ​ ​

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