Optoelectronic device

Abstract

An optoelectronic device, especially for detecting light, comprises: a light detector (11) having a bottom side (13), a top side (15) and at least one side wall (17) extending between the top side (15) and the bottom side (13); a carrier (19) having an upper surface (21) on which the light detector (11) is arranged such that the bottom side (13) faces the carrier (19); a filter (23) covering the top side (15) of the light detector (11), the filter (23) having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, the filter (23) having a lower transmittance for light of wavelengths in the first wavelength region than for light of wavelengths in the second wavelength region; and a first material layer (27) covering the filter (23), wherein the first material layer (27) is configured to have a higher absorption rate for light of wavelengths in a third wavelength region than for light of wavelengths in an adjacent fourth wavelength region, a second threshold wavelength separating the third wavelength region and the fourth wavelength region from each other, and the first threshold wavelength at least approximately corresponding to the second threshold wavelength.

Description

[0001] This invention claims the priority of DE application No. 10 2020 203 805.8 with a filing date of March 24, 2020, the entire content of which is incorporated herein. Technical Field

[0002] The present invention relates to an optoelectronic device, especially for detecting light. The present invention also relates to an optical system having at least one optoelectronic device. Background Art

[0003] DE 10 2017 111 802 A1 discloses an optoelectronic device, which includes a semiconductor-based light detector having a bottom side, a top side, and side walls extending between the top side and the bottom side. The light detector is disposed in a cavity provided by a housing. A filter covers the top side of the light detector. A blocking layer is disposed in a carrier to cover the side walls of the light detector. In addition, a casting layer is disposed in the cavity on the filter and the blocking layer. The casting layer is transparent to the signal radiation to be detected by the light detector.

[0004] WO 2010 / 103047 A1 discloses an optoelectronic device including a light detector, a filtering layer covering the radiation incident surface of the light detector, and a potting body covering the light detector at least at the radiation incident surface of the light detector, wherein the potting body contains radiation absorbing material.

[0005] Light detectors are used in a plurality of possible applications. However, for example, for spectral applications including luminescence, very low light signals from a research sample must be processed. Therefore, a light detector operating with a very high signal-to-noise ratio is required to read the signal under study with good precision. In particular, stray light should be minimized as much as possible because it affects the measurement precision. This requirement can enhance the use of filters designed to maximize the transmission of light in the wavelength range of interest, while minimizing the signals generated at other wavelengths that are not from the sample. Summary of the Invention

[0006] Therefore, an object of the present invention is to provide an improved optoelectronic device, especially an optoelectronic device allowing for performing high-performance measurements.

[0007] This object is met by an optoelectronic device having the features according to claim 1. Preferred embodiments of the present invention are disclosed in the dependent claims.

[0008] According to at least some embodiments of the present invention, it helps to optimize the signal-to-noise ratio of the light detector, especially at the package level.

[0009] In at least some embodiments, an optoelectronic device according to the present invention includes a photodetector having a bottom side, a top side, and at least one sidewall extending between the top side and the bottom side. The device further includes a carrier having an upper surface on which the photodetector is disposed such that the bottom side faces the carrier. The device also includes a filter covering the top side of the photodetector. The filter has a first threshold wavelength that separates a first wavelength region from an adjacent second wavelength region. Further, the filter has a lower transmittance for light having wavelengths in the first wavelength region than for light having wavelengths in the second wavelength region. The device also includes a first material layer covering the filter. The first material layer is configured to have a higher absorption rate for light having wavelengths in a third wavelength region than for light having wavelengths in an adjacent fourth wavelength region. A second threshold wavelength separates the third wavelength region from the fourth wavelength region from each other, and the first threshold wavelength at least approximately corresponds to the second threshold wavelength. Specifically, the first threshold wavelength differs from the second threshold wavelength by at most +20 nm, or at most +15 nm, or at most +10 nm, or at most +5 nm.

[0010] The photodetector can be a photodiode, in particular a semiconductor photodiode.

[0011] The filter can be, for example, a long-pass filter, and the first threshold wavelength can correspond to the front cut-off wavelength of the long-pass filter. The first wavelength region can then correspond to the stop band and the second wavelength region can relate to the wavelength region for which the long-pass filter provides a high transmittance.

[0012] Filters such as long-pass filters can be implemented in the form of dielectric filters. The filter can be integrated on the top side of the photodetector.

[0013] The transmittance of filters such as dielectric filters generally depends on the angle of incidence of light. For example, some applications of luminescence measurements require the use of a photodetector that is highly sensitive in one or more spectral bands and on which light is incident in a wide range of angles from normal to grazing incidence. In the disclosed device, the first material layer is configured to have a high absorption rate in a third wavelength region that at least substantially corresponds to the first wavelength region, while a fourth wavelength region having a high transmittance at least substantially corresponds to the second wavelength region.

[0014] The first material layer can compensate for problems of the filter on the photodetector by smoothing the wavelength dependence for large angles of incidence and at the same time allowing for very high light suppression in the stop band. For example, they can provide an optical density OD of up to 5 or 6. Further, the first material layer and the filter can provide a combined transmittance that is less sensitive to the angle of incidence of the incident light.

[0015] Filters such as optical filters and a first material layer can be easily and cost-effectively manufactured and processed. For example, the first material layer includes epoxy resin or silicone, and the absorber particles act as a long-pass filter. Thus, the device can be manufactured in a cost-effective manner.

[0016] In some embodiments, the device includes at least one outer wall disposed on a surface of a carrier. The outer wall and the carrier form a cavity having an opening. A photodetector is located in the cavity, and light from the outside can enter the cavity through the opening. The carrier and the outer wall can form a housing having an opening on one side. The side wall can have a cross-sectional form of a circular, square, or rectangular ring.

[0017] In some embodiments, the outer wall extends circumferentially spaced apart around at least one side wall of the photodetector.

[0018] The outer wall can be configured to absorb light, preferably light having a wavelength less than or greater than a first threshold wavelength. Preferably, the outer wall is blackened or darkened. Thereby, the amount of useless light reaching the photodetector through the side wall can be reduced or minimized. Crosstalk and detection of useless light can be avoided or reduced.

[0019] A second material layer can be disposed between the first material layer and the carrier, and the second material layer can in particular completely cover at least one side wall of the photodetector and / or the upper surface of the carrier.

[0020] The second material layer can be disposed in a volume formed by the first material layer, the upper surface of the carrier, and at least one outer wall, and at least one outer wall extends circumferentially around at least one side wall of the photodetector on the upper surface of the carrier.

[0021] In some embodiments, the second material layer is configured to absorb light, preferably light having a wavelength less than or greater than a first threshold wavelength. For example, the second material layer can be composed of a highly absorbent casting material or include a highly absorbent casting material, such as a black casting material including epoxy resin or silicone. The second material layer can protect the side walls of the photodetector from stray light absorption.

[0022] In some embodiments, the filter is formed by a third material layer covering the upper side and at least one side wall of the photodetector. For example, the filter can be formed by a highly absorbent resist material, which can also occupy the volume and thus replace the second material layer of the previously described embodiments.

[0023] Preferably, the third material layer is the only layer disposed between the first material layer and the carrier. The third material layer can have a thickness greater than the height of the photodetector.

[0024] The fourth material layer may be disposed above the first material layer. The fourth material layer may be composed of or include a resistive material. The fourth material layer may be dispensed on top of the first material layer and may completely cover the first material layer.

[0025] The fourth material layer may have a higher absorption rate for light of wavelengths in the fifth wavelength region than for light of wavelengths in an adjacent sixth wavelength region, and a third threshold wavelength separates the fifth and sixth wavelength regions from each other, and the first threshold wavelength at least approximately corresponds to the third threshold wavelength.

[0026] The first threshold wavelength may differ from the third threshold wavelength by at most +20 nm, or at most +15 nm, or at most +10 nm.

[0027] At least one of the first material layer, the second material layer, the third material layer, or the fourth material layer and preferably all of these material layers completely cover the entire length and width of the opening of the cavity formed by the carrier and at least one outer wall.

[0028] In some embodiments, in the second wavelength region, the combination of the filter and the first material layer has a transmittance of at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 75%, or 80% relative to the intensity of the incident light.

[0029] In some embodiments, the combination of the filter and the first material layer in the first wavelength region has a transmittance of less than 10%, 20%, 30%, 40%, 50%, 60%, 70%, 75%, or 80%.

[0030] The filter and the first material layer may act as a combined filter with a front cut-off or rear cut-off wavelength. For an incident angle in the range of 0° to 60°, the front cut-off or rear cut-off wavelength is offset from the first threshold wavelength by at most 20 nm, and for an incident angle in the range of 0° to 90°, the front cut-off or rear cut-off wavelength is offset from the first threshold wavelength by at most 30 nm.

[0031] The device may include an optical diaphragm configured to reduce the incident angle on the upper side of the photodetector to a maximum angle, such as 30°.

[0032] Embodiments of the described device can be used for miniaturizing an optical detector. The filter of the detector can be a high optical density filter, such as a long-pass filter, and the detector can significantly reduce the dependence of the optical detection characteristics on the incident angle (even up to a grazing incident angle) in a wide incident range.

[0033] In addition, embodiments of the device can significantly reduce the absorption of stray light from the sidewalls of the detector.

[0034] Embodiments of the described apparatus can be implemented as a low-cost solution and they can be compatible with the miniaturization requirements for consumer applications.

[0035] The present invention also relates to an optoelectronic system, such as a packaged module, comprising one or more light sources and one or more optoelectronic devices according to embodiments of the present invention.

[0036] In some embodiments, at least one of the light sources is configured to provide light having a wavelength in a first wavelength region.

[0037] In some embodiments, one or more light sources do not provide light having a wavelength in a second wavelength region. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] For a more complete understanding of the present invention, exemplary embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which:

[0039] Figure 1 A cross-sectional view schematically showing a first exemplary embodiment of an optoelectronic device according to the present invention.

[0040] Figure 2 Schematically shown Figure 1 a perspective view of the optoelectronic device.

[0041] Figure 3 A cross-sectional view schematically showing a second exemplary embodiment of an optoelectronic device according to the present invention.

[0042] Figure 4 A cross-sectional view schematically showing a third exemplary embodiment of an optoelectronic device according to the present invention.

[0043] Figure 5 Transmission curves showing the normalized relative power and wavelength for different angles of incidence using a linear scale on the y-axis.

[0044] Figure 6 Showing on the y-axis using a logarithmic scale Figure 5 the transmission curve.

[0045] Figure 7 Exemplary transmission curves showing the signal power in human units and the wavelength in nanometers considering all angles of incidence, and a curve showing the optical response of an independent photodiode. DETAILED DESCRIPTION

[0046] Figure 1 and Figure 2The optoelectronic device shown in includes a photodetector 11, such as a photodiode. The photodetector 11 includes a bottom side 13, a top side 15, and at least one side wall 17 extending in the circumferential direction CD between the top side 15 and the bottom side 13.

[0047] The photodetector 11 may be arranged in a housing. The housing may include a bottom side 13 and a side wall 17, and at least a part of the top side 15 includes an opening through which light can be incident on the photodetector 11. Alternatively, the photodetector 11 does not have a housing. For example, the photodetector 11 may be a chip, such as a photodiode chip, and the bottom side 13, the top side 15, and the side wall 17 may correspond to the surfaces of the unmounted photodetector 11.

[0048] The device includes a carrier 19 having an upper surface 21, such as a lead frame. The photodetector 11 is arranged on the carrier 19 such that the bottom side 13 of the photodetector 11 rests on the upper surface 21 of the carrier 19.

[0049] A filter 23 is arranged on the top side 15 such that it at least partially covers the top side 15 of the photodetector 11. For example, the filter covers the central part of the top side 15 but does not cover the contact pads to which the bonding wires 25 are connected. The bonding wires 25 electrically connect the contact pads to the electrical conductors 39 of the carrier 19.

[0050] The filter 23 may in particular be arranged to cover a light detection window (not shown) which is located on the top side 15 and serves as a detection area for the incident light.

[0051] Furthermore, a first material layer 27 covers the filter 23 and the top side 15 of the photodetector 11.

[0052] As Figure 1 and Figure 2 shown, the device may include at least one outer wall 29 which is arranged on the upper surface 21 of the carrier 19 and extends in the circumferential direction CD around the side wall 17 of the photodetector 11. In the illustrated example, the outer wall 29 has a cross-sectional shape of a square or rectangular ring.

[0053] The carrier 19 and the outer wall 29 form a cavity in which the photodetector 11 is located and which has an opening 31 at the top. As Figure 1 shown, the upper surface 21 of the carrier 19 forms the bottom of the cavity, and the first material layer 27 closes the opening 31 and extends over the entire length and width of the opening 31.

[0054] The second material layer 33 is disposed below the first material layer 27, within a volume 35 located between the first material layer 27, the carrier layer 19, the sidewall 17 of the photodetector 11, and the outer wall 29. The second material layer 33 covers the sidewall 17 of the photodetector 11. In some embodiments, the second material layer 33 completely covers the sidewall 17. The height of the second material layer 33 can then correspond to the height of the sidewall 17 of the photodetector 11. Alternatively, as Figure 1 shown, in some embodiments, the first material layer 33 can cover a small top portion of the sidewall 17, while the second material layer 33 covers a majority of the sidewall 17.

[0055] Some applications require the use of photodetectors that are highly selective in one or more spectral bands. For example, in some applications, it is desirable to be able to detect light having a wavelength equal to or greater than a cut-off wavelength, while light having a wavelength shorter than the cut-off wavelength may interfere with the detection and adversely affect the signal-to-noise ratio, making its detection undesirable.

[0056] The filter 23 is configured to have a first threshold wavelength located between a first wavelength region and an adjacent second wavelength region. Thus, the first threshold wavelength separates the first wavelength region from the second wavelength region. The filter may have a lower transmittance for light having wavelengths in the first wavelength region than for light having wavelengths in the second wavelength region.

[0057] In some embodiments, the filter 23 is a long-pass filter and the first threshold wavelength corresponds to the cut-on wavelength at which the transmittance increases to 50% throughput. The transmittance in the first wavelength region is less than 50%, and the first wavelength region includes wavelengths less than the first threshold wavelength. The transmittance of the filter within the second wavelength region is higher than 50%, and the second wavelength region corresponds to wavelengths greater than the first threshold wavelength.

[0058] In some embodiments, the transmittance function of the filter 23 in the wavelength region around the first threshold wavelength can have a high slope. The term "slope" can be used to specify the bandwidth in wavelengths over which the filter transitions from high blocking to high transmission. For example, given as a percentage of the cut-on wavelength, the slope can be defined from various starting and ending points. The slope can be specified as the distance from the 10% transmittance point to the 90% transmittance point. Using this definition, for example, a 500 nm long-pass filter having a 1% slope would be expected to transition from 10% transmittance to 90% transmittance over a 5 nm bandwidth, where 5 nm corresponds to 1% of 500 nm.

[0059] In some embodiments, the filter 23 is a long-pass filter and has a slope of 5%, 2.5%, or 1% with respect to a predetermined first threshold wavelength.

[0060] The first material layer 27 is configured to have a higher absorption rate for light of wavelengths in the third wavelength region than for light of wavelengths in an adjacent fourth wavelength region. A second threshold wavelength separates the third and fourth wavelength regions. The first threshold wavelength of the filter 23 at least approximately corresponds to the second threshold wavelength. Accordingly, the first threshold wavelength of the filter 23 and the second threshold wavelength of the first material layer 27 at least approximately match each other.

[0061] In addition, at least in some embodiments, the third wavelength region may correspond to the first wavelength region of the filter 23, and the fourth wavelength region may correspond to the second wavelength region of the filter 23. In embodiments where the filter 23 corresponds to a long-pass filter, the first material layer 27 may thus act as an absorber for light of wavelengths in the third wavelength region. If not absorbed, such light is blocked by the filter 23. In addition, the first material layer 27 absorbs very little light of wavelengths in the fourth wavelength region. Accordingly, light having a high transmittance through the long-pass filter 23 is also not absorbed by the first material layer 27 or is absorbed by the first material layer 27 at a very low rate. Thus, the first material layer 27 may contribute to improving the filtering function of the filter 23.

[0062] The filter 23, such as in the form of a long-pass filter, may be a dielectric filter that includes a plurality of thin layers of dielectric and optionally metallic materials having different refractive indices. The dielectric filter may have a thickness of approximately 10 μm. Alternatively, the long-pass filter may be made of a resist material. The resist material may have a thickness of approximately 1 μm.

[0063] The characteristics of the filter 23 may depend on the angle of incidence of the light. As further outlined below, Figures 5 to 7 the combined use of the first material layer 27 with the filter 23 may be advantageous because the first material layer 27 may compensate for the dependence on the angle of incidence and thus improve the overall filtering characteristics.

[0064] The first material layer 27 may be made, for example, in the form of a casting using epoxy resin and / or silicone and includes, for example, absorber material in the form of particles. The absorber material may be configured to provide the described characteristic of having a higher absorption rate in the third wavelength region than in the adjacent fourth wavelength region.

[0065] The first material layer 27 may, for example, have a thickness in the range of 200 μm to 300 μm.

[0066] The second material layer 33 is configured to absorb light having wavelengths less than or greater than the first threshold wavelength to prevent light absorption at the sidewalls 17 of the photodetector 11 and / or to prevent light leakage through the encapsulation and / or the carrier 19. The second material layer 33 may be made, for example, in the form of a casting including epoxy resin and / or silicone. Preferably, the casting includes a black filler material.

[0067] The second material layer 33 may have a thickness of, for example, 200 μm. In some embodiments, the thickness may be in the range of 200 μm to 300 μm. In some embodiments, the thickness is at least approximately equal to the thickness of the photodetector 11.

[0068] The outer wall 29 is preferably blackened or darkened. The outer wall 29 can thus also act as an absorber.

[0069] In some embodiments, a transparent resin (not shown) can be used between the photodetector 11 and the filter 23 and the casting filter formed by the first material layer 27. The transparent resin can have a thickness of, for example, 50 μm and can be transparent to radiation in the passband and stopband of the filter 23 and the filter provided by the first material layer 27. Its function can be to prevent the casting and the filter from losing their functions when they come into contact with each other. In this case, the transparent resin can act as a decoupling layer.

[0070] Figure 3 The shown device is different from Figure 1 and Figure 2 the device in that the filter 23 consists of a third material layer 37, which also replaces Figure 3 the second material layer 33 that is absent in

[0071] As Figure 4 shown in Figure 1 and Figure 2 the device is different from

[0072] the device in that it includes an additional fourth material layer 41, for example, with a thickness in the range of 1 μm to 100 μm. The fourth material layer 41 can be configured to have a higher absorption rate for light of wavelengths in the fifth wavelength region than for light of wavelengths in the adjacent sixth wavelength region. The third threshold wavelength separates the fifth and sixth wavelength regions. The first threshold wavelength of the filter 23 can at least approximately correspond to the third threshold wavelength, and the fifth wavelength region can correspond to the first wavelength region, while the sixth wavelength region can correspond to the second wavelength region. <0,

[0072] The fourth material layer 41 can be made of a resist material and can include absorber material particles that can be configured to provide the described higher absorption rate characteristic in the fifth wavelength region than in the adjacent sixth wavelength region.

[0073] As Figures 1 to 4Each of the exemplary devices shown includes a filter 23 for detecting light in a second wavelength region and a first material layer 27. The detection is substantially independent of the angle of incidence. In addition, the filter 23 and the first material layer 27 are used to avoid detecting light in the first wavelength region. Additionally, the darkened or blackened outer wall 29 and the absorbing second material layer 33 (for the Figure 1 , Figure 2 and Figure 4 embodiments) are used to avoid detecting unwanted light, crosstalk, and light leakage into the device.

[0074] For the Figure 1 and 2 embodiments, Figure 5 shows the calculated combined transmittance curves as a function of the standardized relative power and wavelength for angles of incidence of 0°, 10°, 20°, 30°, 40°, 50°, and 60° using a linear scale on the y-axis. Figure 6 shows the transmittance curve of Figure 5 using a logarithmic scale on the y-axis. The angle of incidence is measured with respect to the surface normal on the top surface 43 of the filter 23. The combined transmittance curves take into account the filtering characteristics of the filter 23 and the first material layer 27.

[0075] Figure 5 and Figure 6 show that for wavelengths less than the first threshold wavelength, the transmittance is low, corresponding here to the pre-cutoff wavelength λ c ≈ 750 nm, but is substantially independent of the angle of incidence. The wavelength region having wavelengths less than λ c corresponds to the first and third wavelength regions. Additionally, Figure 5 and Figure 6 show that for wavelengths above λ c , the transmittance is high. The low dependence on the angle of incidence is acceptable.

[0076] For the Figure 1 and 2 embodiments, Figure 7 shows the calculated detection signal 51 as a function of the signal power in human units and wavelength. The signal 51 takes into account all angles of incidence. Figure 7 Also shown is a reference signal 53 of an independent photodiode on which the corresponding filter 23 is placed. Figure 7 Shows that for wavelengths less than the pre-cutoff wavelength λ c , the detection signal 51 is lower than the reference signal 53 by several orders of magnitude. Additionally, for wavelengths greater than the pre-cutoff wavelength λ c , the detection signal 51 is at least approximately equal to the reference signal 53.

[0077] List of reference numerals

[0078] 11 Photodetector

[0079] 13 Bottom side

[0080] 15 Top side

[0081] 17 Side wall

[0082] 19 Carrier

[0083] 21 Upper surface

[0084] 23 Filter

[0085] 25 Bonding wire

[0086] 27 First material layer

[0087] 29 Outer wall

[0088] 31 Opening

[0089] 33 Second material layer

[0090] 35 Volume

[0091] 37 Third material layer

[0092] 39 Conductor

[0093] 41 Fourth material layer

[0094] 43 Top surface

[0095] 51 Detection signal

[0096] 53 Reference signal

[0097] CD Circumferential direction

[0098] λ c Front cut-off wavelength.

Claims

1. An optoelectronic device, comprising: a photodetector (11) having a bottom side (13), a top side (15), and at least one sidewall (17) extending between the top side (15) and the bottom side (13); a carrier (19) having an upper surface (21), the photodetector (11) being arranged on the upper surface such that the bottom side (13) faces the carrier (19); at least one outer wall (29) arranged on the surface (21) of the carrier (19), the outer wall (29) and the carrier (19) forming a cavity having an opening (31), the photodetector (11) being located in the cavity; a filter (23) covering the top side (15) of the photodetector (11), the filter (23) having a first threshold wavelength that separates a first wavelength region from an adjacent second wavelength region, the filter (23) having a lower transmittance for light having a wavelength in the first wavelength region than for light having a wavelength in the second wavelength region; and a first material layer (27) covering the filter (23), wherein the first material layer (27) is configured to have a higher absorption rate for light having a wavelength in a third wavelength region than for light having a wavelength in an adjacent fourth wavelength region, a second threshold wavelength separating the third wavelength region and the fourth wavelength region from each other, and the first threshold wavelength and the second threshold wavelength differing by at most ±20 nm, and wherein a second material layer (33) is arranged between the first material layer (27) and the carrier (19).

2. The optoelectronic device according to claim 1, characterized in that, The first threshold wavelength and the second threshold wavelength differ by at most ±15 nm, or at most ±10 nm, or at most ±5 nm.

3. The optoelectronic device according to claim 1 or 2, characterized in that the filter (23) is a dielectric filter, or consists of or includes a resist material, and / or the first material layer (27) includes an epoxy resin or silicone and absorber particles serving as a filter.

4. The optoelectronic device according to claim 1, wherein, The outer wall (29) extends circumferentially spaced apart around the at least one sidewall (17) of the photodetector (11), and / or the outer wall (29) is configured to absorb light having a wavelength less than or greater than the first threshold wavelength, and / or the outer wall (29) is blackened or darkened.

5. The optoelectronic device according to claim 1, wherein The second material layer (33) covers the at least one sidewall (17) of the photodetector (11) and / or the upper surface (21) of the carrier (19).

6. The optoelectronic device according to claim 5, wherein, The second material layer (33) is arranged in a volume formed by the first material layer (27), the upper surface (21) of the carrier (19), and at least one outer wall (29), the at least one outer wall extending circumferentially (CD) around the at least one sidewall (17) of the photodetector (11) on the upper surface (21) of the carrier (19).

7. The optoelectronic device according to claim 5 or 6, characterized in that The second material layer (33) is configured to absorb light having a wavelength less than or greater than the first threshold wavelength.

8. The optoelectronic device according to claim 1, characterized in that, The filter (23) is formed by a third material layer (37), and the third material layer (37) covers the upper side (15) and the at least one side wall (17) of the photodetector (11).

9. The optoelectronic device according to claim 8, wherein the third material layer (37) is arranged between the first material layer (27) and the carrier (19), and / or the third material layer (37) is the only layer arranged between the first material layer (27) and the carrier (19), and / or the thickness of the third material layer (37) is greater than the height of the photodetector (11).

10. The optoelectronic device according to claim 1, wherein A fourth material layer (41) is arranged above the first material layer (27).

11. The optoelectronic device according to claim 10, characterized in that, The fourth material layer (41) has a higher absorption rate for light having a wavelength in a fifth wavelength region than for light having a wavelength in an adjacent sixth wavelength region, and a third threshold wavelength separates the fifth wavelength region and the sixth wavelength region from each other, and the first threshold wavelength at least approximately corresponds to the third threshold wavelength, wherein the first threshold wavelength and the third threshold wavelength differ by at most ±20 nm, or at most ±15 nm, or at most ±10 nm.

12. The optoelectronic device according to claim 2, wherein At least one of the first material layer, the second material layer, the third material layer, or the fourth material layer of the material layers (27, 33, 37, 41) completely covers the entire width and height of the opening (31) of the cavity formed by the carrier (19) and the at least one outer wall (19).

13. The optoelectronic device according to claim 1, wherein in the second wavelength region, the combination of the filter (23) and the first material layer (27) has a transmittance of at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 75% or 80% with respect to the intensity of the incident light, and / or the combination of the filter (23) and the first material layer (27) has a transmittance of less than 10%, 20%, 30%, 40%, 50%, 60%, 70%, 75% or 80% in the first wavelength region.

14. The optoelectronic device according to claim 1, characterized in that, The filter (23) and the first material layer (27) are used as a combined filter having a front cut-off wavelength or a rear cut-off wavelength. For an incident angle in the range of 0° to 60°, the front cut-off wavelength or the rear cut-off wavelength is offset from the first threshold wavelength by at most 20 nm, and for an incident angle in the range of 0° to 90°, the front cut-off wavelength or the rear cut-off wavelength is offset from the first threshold wavelength by at most 30 nm.

15. The optoelectronic device according to claim 1, characterized in that, A transparent resin is arranged between the photodetector (11), the filter (23), and the first material layer (27).

16. An optoelectronic system, comprising: one or more light sources, and one or more optoelectronic devices according to any one of the preceding claims.

17. The optoelectronic system according to claim 16, wherein at least one of the light sources is configured to provide light having a wavelength in the first wavelength region, and / or The one or more light sources do not provide light having a wavelength in the second wavelength region.

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