A comb-shaped channel thermal nebulizer based on silicon substrate and a manufacturing method thereof

Abstract

The application discloses a silicon substrate-based comb-shaped channel thermal atomizer, which comprises a silicon substrate and an electrode, the electrode is made on the surface of the silicon substrate, the electrode is in a ring structure, a plurality of first strip-shaped holes are arranged on the surface of the silicon substrate on the inner side of the electrode, a plurality of comb-shaped atomization channels are arranged on the surface of the silicon substrate on both sides of the electrode, the comb-shaped atomization channel comprises a second strip-shaped hole and a plurality of third strip-shaped holes, the plurality of third strip-shaped holes are arranged in parallel and at equal distances, the second strip-shaped hole is arranged at the end of the third strip-shaped hole away from the electrode, and the third strip-shaped hole is communicated to the second strip-shaped hole. The application further discloses a manufacturing method of the silicon substrate-based comb-shaped channel thermal atomizer. Compared with the prior art, the application improves the processing efficiency of the atomization channel, reduces the heat loss of the electrode on the silicon substrate, and improves the atomization efficiency of the thermal atomizer chip.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of thermal atomizer chip, in particular to a comb-shaped channel thermal atomizer based on silicon substrate and a manufacturing method thereof. BACKGROUND

[0002] The atomizer in the prior art is mostly based on ceramic chip. The ceramic atomizer is mainly composed of ceramic and heating film. The ceramic is sintered at high temperature to form a bowl-shaped structure. The heating film is designed in a specific shape and attached to the surface of the ceramic. In the working process, the heating film uniformly generates heat to heat the liquid to form mist, which is emitted through the ceramic honeycomb holes.

[0003] In the existing ceramic atomizer, the processing difficulty of the ceramic micro-holes is great, and the uniformity is difficult to guarantee, resulting in poor atomization uniformity. Therefore, there is also a silicon substrate atomizer on the market. In the existing silicon substrate atomizer, small-diameter pores are manufactured on the silicon substrate, but the etching efficiency is low when processing high aspect ratio round-shaped atomization channels on the silicon substrate. In addition, the heat of the electrode on the silicon substrate is easily conducted and dissipated through the silicon, resulting in power waste. SUMMARY

[0004] The purpose of the present application is to provide a comb-shaped channel thermal atomizer based on silicon substrate and a manufacturing method thereof, to improve the processing efficiency of the atomization channel, reduce the heat loss of the electrode on the silicon substrate, and improve the atomization efficiency of the thermal atomizer chip.

[0005] In order to achieve the above-mentioned purpose, on the one hand, the present application provides a comb-shaped channel thermal atomizer based on silicon substrate, comprising: a silicon substrate and an electrode, the electrode is made on the surface of the silicon substrate, the electrode is in a ring structure, a plurality of first strip-shaped holes are arranged on the inner side of the surface of the silicon substrate of the electrode, a plurality of comb-shaped atomization channels are arranged on the surface of the silicon substrate on both sides of the electrode, the comb-shaped atomization channel comprises a second strip-shaped hole and a plurality of third strip-shaped holes, the plurality of third strip-shaped holes are arranged in parallel and equidistantly, the second strip-shaped hole is arranged at the end of the third strip-shaped hole away from the electrode, and the third strip-shaped hole is communicated to the second strip-shaped hole.

[0006] As a further description of the above technical solution:

[0007] At least one fourth strip-shaped hole is arranged between the adjacent two comb-shaped atomization channels, and the fourth strip-shaped hole is parallel to the third strip-shaped hole.

[0008] As a further description of the above technical solution:

[0009] Two fourth strip-shaped holes are arranged between the adjacent two comb-shaped atomization channels.

[0010] As a further description of the above technical solution:

[0011] The resistivity of the silicon substrate is 1-100 Ω·cm.

[0012] As a further description of the above technical solution:

[0013] The thickness of the silicon substrate is 100-500 microns.

[0014] In another aspect, the application also provides a manufacturing method of a comb-shaped channel thermal atomizer based on a silicon substrate, comprising the following steps:

[0015] S1, growing 10-2000nm Ti / Au material on the silicon substrate;

[0016] S2, uniformly gluing and photoetching the silicon substrate on which the Ti / Au material metal layer is grown;

[0017] S3, using plasma etching or chemical etching liquid to etch the exposed metal on the silicon substrate clean to form an electrode;

[0018] S4, performing second photoetching on the silicon substrate, and using reactive ion etching method to process the microchannel processing through hole to be completed;

[0019] 85, removing the excess photoresist on the silicon substrate and cleaning to obtain the atomizer.

[0020] As a further description of the above technical solution:

[0021] In step S1, the Ti / Au material is grown on the silicon substrate by electron beam evaporation or reactive sputtering.

[0022] As a further description of the above technical solution:

[0023] In step S4, the microchannel processing through hole includes a first strip-shaped hole, a comb-shaped atomization channel and a fourth strip-shaped hole.

[0024] As a further description of the above technical solution:

[0025] In step S5, chemical cleaning combined with oxygen plasma cleaning is used to remove the excess photoresist on the silicon substrate.

[0026] As described above, due to the adoption of the above technical solution, the application has the following beneficial effects:

[0027] 1. In the application, micro-nano processing means in semiconductor manufacturing process is adopted, silicon material is selected as the atomization substrate, and plasma etching, metal deposition and other processing means are combined to manufacture a comb-shaped channel thermal atomizer. The large-area electrode design on the thermal atomizer ensures the uniformity of atomization heating.

[0028] 2, the power of the atomizer is constant, the heat generated is Q = I * I * R * t, in order to improve the atomization efficiency, too much heat cannot be conducted to the edge of the chip shell. The basic formula of heat transfer is: Φ is the heat flow, K is the total thermal conductivity, A is the heat transfer area, the contact area is proportional to the heat conduction, reducing the transfer area reduces the heat loss. In the present application, the second strip hole of the comb-shaped atomization channel forms a heat insulation design, which ensures that the heat generated by the heating electrode cannot reach the outer end of the chip, and ensures that more atomization effect is generated under certain voltage and current conditions, effectively improving the chip atomization efficiency.

[0029] 3, in the present application, the design of the comb-shaped atomization channel makes the etching gas F ion etching silicon substrate, which can better enter the bottom of the silicon substrate relative to the high aspect ratio deep hole, the reaction is sufficient, the etching efficiency is improved, and the process yield is greater than that of the round hole atomization channel, which ensures sufficient and uniform atomization channel. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0031] Figure 1 It is a top view structural schematic diagram of a comb-shaped channel thermal atomizer based on silicon substrate.

[0032] Figure 2 It is Figure 1 The local enlarged view of B in the middle.

[0033] Figure 3 It is an A-A sectional view of a comb-shaped channel thermal atomizer based on silicon substrate.

[0034] LEGEND:

[0035] 1, silicon substrate; 11, first strip hole; 12, comb-shaped atomization channel; 121, second strip hole; 122, third strip hole; 13, fourth strip hole; 2, electrode. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the technical scheme in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of embodiments of the application provided in the drawings is not intended to limit the scope of the application claimed, but merely represents selected embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the scope of protection of the application.

[0038] Please refer to Figures 1-3 The application provides a technical solution: on the one hand, the application provides a silicon substrate-based comb-shaped channel thermal atomizer, comprising: a silicon substrate 1 and an electrode 2, the electrode 2 is made on the surface of the silicon substrate 1, the electrode 2 is in a ring structure, a plurality of first strip-shaped holes 11 are arranged on the surface of the silicon substrate 1 inside the electrode 2, a plurality of comb-shaped atomization channels 12 are arranged on the surface of the silicon substrate 1 on both sides of the electrode 2, the comb-shaped atomization channel 12 comprises a second strip-shaped hole 121 and a plurality of third strip-shaped holes 122, the plurality of third strip-shaped holes 122 are arranged in parallel and equidistantly, the second strip-shaped hole 121 is arranged at one end of the third strip-shaped hole 122 away from the electrode 2, and the third strip-shaped hole 122 is communicated to the second strip-shaped hole 121.

[0039] Two fourth strip-shaped holes 13 are arranged between the two adjacent comb-shaped atomization channels 12, and the fourth strip-shaped holes 13 are parallel to the third strip-shaped holes 122. The arrangement of the fourth strip-shaped holes 13 can improve the atomization effect on the one hand, and can effectively improve the strength of the silicon substrate 1 on the other hand, so as to prevent the silicon substrate 1 from being damaged.

[0040] The resistivity of the silicon substrate 1 is 1-100Ω·cm, which effectively ensures the conduction effect of the electrode heat.

[0041] The thickness of the silicon substrate 1 is 100-500 microns, which can be flexibly set according to requirements.

[0042] On the other hand, the application also provides a silicon substrate-based comb-shaped channel thermal atomizer manufacturing method, comprising the following steps:

[0043] S1, growing 10-2000nm of Ti / Au material on the silicon substrate 1 by electron beam evaporation or reactive sputtering;

[0044] S2, uniformly gluing and photoetching the silicon substrate 1 on which the Ti / Au material metal layer is grown;

[0045] S3, using plasma etching or chemical etching liquid to etch the exposed metal on the silicon substrate 1 clean to form the electrode 2;

[0046] S4, the second photoetching is performed on the silicon substrate 1, and the micro-channel processing through hole is processed by using a reactive ion etching method, and the micro-channel processing through hole includes a first strip-shaped hole 11, a comb-shaped atomization channel 12 and a fourth strip-shaped hole 13;

[0047] S5, the excess photoresist on the silicon substrate 1 is removed by using a chemical cleaning combined with an oxygen plasma cleaning method, and is cleaned, so that the atomizer is obtained.

[0048] Working principle: the micro-nano processing means in the semiconductor manufacturing process is adopted, the silicon material is selected as the atomization substrate, the plasma etching, metal deposition and other processing means are combined, and the comb-shaped channel thermal atomizer is manufactured. The large-area electrode design on the thermal atomizer ensures the uniformity of atomization heating. The generated heat is Q=I*I*R*t when the power of the atomizer is certain. In order to improve the atomization efficiency, too much heat cannot be conducted to the edge of the chip shell. The basic formula of heat transfer is: Φ is the heat flow, K is the total thermal conductivity, A is the heat transfer area, and it can be seen that the contact area is proportional to the heat conduction, so that the heat transfer area is reduced, and the heat loss is reduced. In the present application, the second strip-shaped hole of the comb-shaped atomization channel is designed to form a thermal break, so that the heat generated by the heating electrode when the temperature rises cannot be transmitted to the outer end of the chip (the silicon substrate 1), so that more atomization effect is generated under the condition of a certain voltage and current, and the chip atomization efficiency is effectively improved.

[0049] The design of the comb-shaped atomization channel 12 makes the etching gas F ion etching the silicon substrate 1, which can better enter the bottom of the silicon substrate relative to the high aspect ratio deep hole (circular hole atomization channel), the reaction is sufficient, the etching efficiency is improved, and the process yield is greater than that of the circular hole atomization channel, so that the uniform atomization channel is ensured.

[0050] The above is only a preferred specific embodiment of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can make equivalent replacement or change according to the technical scheme and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A comb-shaped channel thermal atomizer based on a silicon substrate, characterized in that, include: A silicon substrate (1) and an electrode (2) are provided. The electrode (2) is fabricated on the surface of the silicon substrate (1). The electrode (2) has a ring structure. A plurality of first strip holes (11) are provided on the surface of the silicon substrate (1) inside the electrode (2). A plurality of comb-shaped atomizing channels (12) are provided on the surface of the silicon substrate (1) outside both ends of the electrode (2). The comb-shaped atomizing channel (12) includes a second strip hole (121) and a plurality of third strip holes (122). The plurality of third strip holes (122) are arranged in parallel and at equal intervals. The second strip hole (121) is located at the end of the third strip hole (122) away from the electrode (2). The third strip hole (122) is connected to the second strip hole (121).

2. The comb-shaped channel thermal atomizer based on a silicon substrate according to claim 1, characterized in that, At least one fourth strip hole (13) is provided between two adjacent comb-shaped atomizing channels (12), and the fourth strip hole (13) is parallel to the third strip hole (122).

3. A comb-shaped channel thermal atomizer based on a silicon substrate according to claim 2, characterized in that, Two fourth strip holes (13) are provided between two adjacent comb-shaped atomizing channels (12).

4. The comb-shaped channel thermal atomizer based on a silicon substrate according to claim 1, characterized in that, The resistivity of the silicon substrate (1) is 1-100 Ω•cm.

5. A comb-shaped channel thermal atomizer based on a silicon substrate according to claim 1 or 4, characterized in that, The thickness of the silicon substrate (1) is 100-500 micrometers.

6. A method for manufacturing a comb-shaped channel thermal atomizer as described in claim 1, characterized in that, Includes the following steps: S1. A 10-2000 nm Ti / Au material is grown on a silicon substrate (1); S2. Perform photolithography on the silicon substrate (1) on which the Ti / Au metal layer has been grown; S3. Use plasma etching or chemical etching solution to etch away the exposed metal on the silicon substrate (1) to form an electrode (2). S4. Perform a second photolithography on the silicon substrate (1) and use reactive ion etching to complete the microchannel through-hole processing; S5. Remove excess photoresist from the silicon substrate (1) and clean it to obtain an atomizer.

7. The method for manufacturing the comb-shaped channel thermal atomizer according to claim 6, characterized in that, In step S1, Ti / Au material is grown on a silicon substrate (1) by electron beam evaporation or reactive sputtering.

8. The method for manufacturing a comb-shaped channel thermal atomizer according to claim 6, characterized in that, In step S4, the microchannel processing through hole includes a first strip hole (11), a comb-shaped atomizing channel (12), and a fourth strip hole (13).

9. The method for manufacturing a comb-shaped channel thermal atomizer according to claim 6, characterized in that, In step S5, chemical cleaning combined with oxygen plasma cleaning is used to remove excess photoresist from the silicon substrate (1).

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