Silicon oxide preparation device

Abstract

A preparation device for silicon oxide comprises a heating furnace, a heating device, a crucible, a precipitation box, an exhaust pipe, and an exhaust device, wherein the interior of the heating furnace has a heating furnace chamber surrounded by a heat-insulating material; the heating device, the crucible and the precipitation box are arranged in the heating furnace chamber; the precipitation box has an air inlet and an air outlet, the precipitation box comprises at least one partition and is arranged in the internal space of the precipitation box, the at least one partition and the inner wall of the precipitation box form at least one channel, and the at least one channel is respectively connected to the air inlet and the air outlet; the exhaust pipe has a first end and a second end, the first end is arranged at a position adjacent to the upper opening of the crucible, and the second end is connected to the air inlet of the precipitation box; the exhaust device is connected to the air outlet of the precipitation box.

Description

Technical Field

[0001] The present invention relates to a silicon oxide preparation device, and in particular to a silicon oxide preparation device capable of increasing the silicon oxide yield. Background Art

[0002] It is known that secondary batteries include nickel-cadmium batteries, nickel-metal hydride batteries, lithium-ion secondary batteries, etc. Compared with nickel-cadmium batteries or nickel-metal hydride batteries, lithium-ion secondary batteries have the characteristics of high energy density, high operating voltage, small memory effect and fast charging. Therefore, they are widely used in electronic devices such as tablets, smart phones, laptops, game consoles, etc.

[0003] The reaction inside a lithium-ion secondary battery is mainly through the reciprocating movement of lithium ions between the positive electrode and the negative electrode to create a potential difference between the positive and negative electrodes. Generally, lithium-ion secondary batteries use graphite as the negative electrode material, and the energy density of lithium-ion secondary batteries using this negative electrode material is very low. Therefore, in order to improve the energy density, the industry has developed a variety of new negative electrode materials. Among them, the use of silicon oxide as the negative electrode material of lithium-ion secondary batteries can obtain high-voltage, high-energy-density lithium-ion secondary batteries.

[0004] The existing silicon oxide preparation device for preparing negative electrode materials of lithium secondary batteries usually includes a raw material container, a heating device, a precipitation chamber and an exhaust device. The powder containing silicon oxide is placed in the raw material container and heated and gasified, and then the silicon oxide gas is extracted by the exhaust device and made to flow through the precipitation chamber to precipitate solid silicon oxide on the inner wall of the precipitation chamber. However, the exhaust device of the existing silicon oxide preparation device easily extracts the silicon oxide gas from the precipitation chamber quickly, resulting in a poor yield of the precipitated silicon oxide collected in the precipitation chamber. Therefore, the existing silicon oxide preparation device is still not perfect in structural design and there is still room for improvement. Summary of the invention

[0005] In view of this, an object of the present invention is to provide a silicon oxide preparation device that can increase the silicon oxide yield.

[0006] In order to achieve the above-mentioned purpose, the present invention provides a preparation device of silicon oxide, which includes a heating furnace, a heating device, a crucible, a precipitation box, an exhaust pipe and a suction device, wherein the interior of the heating furnace has a heating furnace chamber surrounded by a heat-insulating material; the heating device is arranged in the heating furnace chamber; the crucible is arranged in the heating furnace chamber to accommodate a solid raw material, the solid raw material includes silicon dioxide and silicon, the heating device heats the crucible to make the solid raw material form a gaseous silicon oxide; the crucible has an upper opening; the precipitation box is arranged in the heating furnace chamber, the precipitation box has an air inlet and an air outlet, the precipitation box The invention comprises at least one partition plate and is arranged in the inner space of the precipitation box, wherein the at least one partition plate and the inner wall of the precipitation box form at least one channel, and the at least one channel is respectively connected to the gas inlet and the gas outlet; the exhaust duct has a first end and a second end, the first end is arranged at a position adjacent to the upper opening of the crucible, and the second end is connected to the gas inlet of the precipitation box; the exhaust device is connected to the gas outlet of the precipitation box; the exhaust device extracts the gaseous silicon oxide from the crucible, so that the gaseous silicon oxide contacts the inner wall of the precipitation box and the surface of the at least one partition plate to precipitate a solid silicon oxide.

[0007] The effect of the present invention is that, by disposing the at least one partition, the contact area of ​​the gaseous silicon oxide is increased and the gas flow path of the gaseous silicon oxide is extended, thereby increasing the yield of silicon oxide precipitation. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 Schematic diagram of a silicon oxide preparation device according to a preferred embodiment of the present invention.

[0009] Figure 2 It is a schematic diagram of some components of the above preferred embodiment.

[0010] Figure 3A It is a schematic diagram of the precipitation box of the above preferred embodiment.

[0011] Figure 3B It is a schematic diagram of the precipitation box of the above preferred embodiment.

[0012] Figure 4 It is a schematic diagram of a precipitation box according to another preferred embodiment of the present invention.

[0013] Figure 5 It is a schematic diagram of a precipitation box according to another preferred embodiment of the present invention.

[0014] Figure 6 It is a schematic diagram of some components of another preferred embodiment of the present invention.

[0015] Figure 7It is a schematic diagram of some components of another preferred embodiment of the present invention.

[0016] Figure 8 It is a schematic diagram of some components of another preferred embodiment of the present invention. DETAILED DESCRIPTION

[0017] In order to more clearly illustrate the present invention, preferred embodiments are described in detail below with reference to the accompanying drawings. Figures 1 to 3A 3B shows a silicon oxide preparation device 1 according to a preferred embodiment of the present invention, wherein the silicon oxide preparation device 1 comprises a heating furnace 10, a carrier 20, a heating device, a crucible 40, a precipitation box 50, an exhaust pipe 60 and a vacuum device 70.

[0018] The interior of the heating furnace 10 has a heating furnace chamber R surrounded by an insulating material 12. The carrier 20, the heating device and the crucible 40 are arranged in the heating furnace chamber R. The crucible 40 is arranged on the carrier 20. The crucible 40 has an upper opening 40a. The crucible is used to accommodate a solid raw material. The solid raw material includes silicon dioxide and silicon. The heating device includes a plurality of heaters 30, which are respectively arranged on the outer wall surrounding the crucible 40 and above the crucible 40. The heating device is used to heat the crucible 40 to make the solid raw material form a gaseous silicon oxide. In this embodiment, the heating device can maintain the internal temperature of the heating furnace chamber R between 1300 and 1350 degrees.

[0019] The precipitation box 50 is arranged between the heating furnace chamber R and the inner furnace wall 10a of the heating furnace 10, and the precipitation box 50 is arranged at a position close to the heating device. The temperature of the precipitation box 50 is controlled to be maintained between 200 and 600 degrees by adjusting the distance between the precipitation box 50 and the heating device. Since the present invention controls the temperature of the precipitation box 50 by adjusting the distance between the precipitation box 50 and the heating device, there is no need to additionally set up a cooling device such as a water cooling device, thereby effectively reducing the production cost. The precipitation box 50 has an air inlet 50a and an air outlet 50b. The precipitation box 50 includes a plurality of partitions disposed in the internal space of the precipitation box 50. The plurality of partitions include a plurality of transverse partitions 80, and the plurality of transverse partitions 80 intersect an axis X between the air inlet 50a and the air outlet 50b. The plurality of transverse partitions 80 and the inner wall of the precipitation box 50 form a channel C, and the channel C is connected to the air inlet 50a and the air outlet 50b respectively, and the total length of the channel C is greater than a minimum distance between the air inlet 50a and the air outlet 50b. In this embodiment, the thermal conductivity of the plurality of partitions is greater than or equal to 16W / mK, and the melting point is greater than 1200 degrees. For example, the plurality of partitions can be made of stainless steel or graphite, but not limited thereto. In addition, in this embodiment, the number of the channel C is one as an example. In other embodiments, more than one channel can be formed by the arrangement positions of the plurality of partitions 80 .

[0020] In addition, in this embodiment, the precipitation box 50 is a hexahedron, and its length and width are 350 and 300 mm respectively. The height H of the precipitation box 50 is 350 mm, and the height H of the precipitation box 50 is the height of the precipitation box 50 in the direction away from the heating furnace chamber R. The height H of the precipitation box 50 is selected to be 350 mm in order to maintain the temperature of the precipitation box 50 between 200 and 600 degrees. In addition, in other embodiments, the user can increase the length and width of the precipitation box 50 as appropriate. For example, the length and width of the precipitation box 50 can be increased to 600 mm respectively to increase the contact area with the gaseous silicon oxide, thereby increasing the yield of the precipitated solid silicon oxide S. It should be noted that please cooperate with Figure 3A and Figure 3BIn this embodiment, the precipitation box 50 includes a box body 52 and a box cover 54. The box body 52 has a left side plate 521, a right side plate 522, a top plate 523, a bottom plate 524 and a side opening 525. The top plate 523 has the air outlet 50b, the bottom plate 524 has the air inlet 50a, and the box cover 54 is used to close the side opening 525. The plurality of transverse partitions 80 are respectively connected to the inner wall of the box body 52 and the box cover 54 in a substantially parallel manner. One of the transverse partitions 80 on the inner wall of the box body 52 is connected to the left side plate 521 and is arranged to maintain a distance from the right side plate 522, and the other of the transverse partitions 80 connected to the inner wall of the box body 52 is connected to the right side plate 522 and is arranged to maintain a distance from the left side plate 521. When the box cover 54 closes the side opening 525, the transverse partitions 80 connected to the inner wall of the box body 52 and the transverse partitions 80 connected to the box cover 54 are arranged alternately, and as shown in FIG. Figure 3A As shown, the transverse partition 80 connected to the inner wall of the box body 52 has a first distance D1 with the left plate 521 and the right plate 522 respectively, and the transverse partition 80 connected to the inner wall of the box body 52 has a first spacing H1 with the top plate 523, wherein the first distance D1 can be between 15 mm and 25 mm, and the first spacing H1 can be between 20 mm and 50 mm. The above-mentioned arrangement of the transverse partition 80 can not only extend the length of the channel C, but also the design of the plurality of transverse partitions 80 being staggered on the box body 52 and the box cover 54 can facilitate the user to take out the produced solid silicon oxide. In addition, in this embodiment, the first distance D1 is selected to be between 15 mm and 25 mm because when the first distance D1 is greater than 25 mm, the gas flow speed in the box body 52 is faster and the reaction time is shorter, which can easily cause the silicon oxide output rate to decrease. When the first distance D1 is less than 15 mm, the silicon oxide produced between the transverse partition 80 and the left plate 521 or the right plate 522 may block the channel C, resulting in a decrease in the output rate. The first spacing H1 is selected to be between 20 mm and 50 mm, which is conducive to the user taking out the solid silicon oxide.

[0021] Please cooperate Figure 1The exhaust pipe 60 has a first end 60a and a second end 60b, wherein the first end 60a is disposed adjacent to the upper opening 40a of the crucible 40, and the second end 60b is communicated with the gas inlet 50a of the precipitation box 50, and the gas extraction device 70 is communicated with the gas outlet 50b of the precipitation box 50, whereby the gas extraction device 70 extracts the gaseous silicon oxide from the crucible 40, so that the gaseous silicon oxide contacts the inner wall of the precipitation box 50 and the surface of the plurality of transverse partitions 80 to precipitate as Figure 3A The solid silicon oxide S shown in the figure is increased, and by the arrangement of the plurality of transverse partitions 80, the contact area with the gaseous silicon oxide is increased and the gas flow path of the gaseous silicon oxide is extended, thereby increasing the yield of the solid silicon oxide S. In this embodiment, the gas extraction device is illustrated by a cyclone dust collector as an example, through which the gaseous silicon oxide can be precipitated in the cyclone dust collector, thereby improving the collection rate of the solid silicon oxide.

[0022] Please cooperate Figure 2 It should be further noted that, in this embodiment, the silicon oxide preparation device 1 includes a mask 90, the mask 90 covers the upper opening 40a of the crucible 40, and the mask 90 has an opening 90a, the opening 90a is connected to the first end 60a of the exhaust pipe 60 and the interior of the crucible 40, and the setting of the mask 90 can limit the flow area of ​​the gaseous silicon oxide, thereby improving the collection rate of the solid silicon oxide S.

[0023] It is worth mentioning that in this embodiment, the number of partitions is described as a plurality. However, in practice, the number of partitions may also be as follows: Figure 4A transverse partition 80 is disposed in the internal space of the precipitation box 50, and the transverse partition 80 is connected to the right side plate 522, and there is a second distance D2 between the transverse partition 80 and the left side plate 521, and there is a second spacing H2 between the top of the transverse partition 80 and the top plate 523, and there is a third spacing H3 between the bottom of the transverse partition 80 and the bottom plate 524, and intersects with the axis X between the air inlet 50a and the air outlet 50b, which can also achieve the effect of increasing the contact area with the gaseous silicon oxide and extending the gas flow path of the gaseous silicon oxide. The second distance D2 can be between 15mm and 25mm, the second spacing H2 can be between 20mm and 110mm, and the third spacing H3 can be between 240mm and 330mm. In this embodiment, the second distance D2 is selected to be between 15 mm and 25 mm because when the second distance D2 is greater than 25 mm, the gas flow speed in the box body 52 is faster, the reaction time is shorter, and the silicon oxide yield rate is likely to decrease. When the second distance D2 is less than 15 mm, the silicon oxide produced between the transverse partition 80 and the left side plate 521 is likely to block the channel C, resulting in a decrease in yield. In addition, the second spacing H2 is selected to be between 20 mm and 110 mm and the third spacing H3 is selected to be between 240 mm and 330 mm, so that the ratio of the second spacing H2 to the third spacing H3 is between 1: 2.3~1:16.5, the user can obtain different yields and oxygen contents of solid silicon oxide, that is, x values ​​of SiOx, by adjusting the ratio of the second spacing H2 to the third spacing H3. When the second spacing H2 accounts for a relatively small proportion, the effect of increasing the contact area with the gaseous silicon oxide can be achieved, thereby improving the yield of solid silicon oxide and obtaining a solid silicon oxide product with a wider distribution of x values. Conversely, when the second spacing H2 accounts for a relatively large proportion, a solid silicon oxide product with a more concentrated distribution of x values ​​can be obtained.

[0024] In addition, the partition can also be arranged in the following manner: Figure 5As shown, the partition includes two longitudinal partitions 82 and a transverse partition 80, and the two longitudinal partitions 82 are connected to the transverse partition 80, one end of the plurality of longitudinal partitions 82 is respectively connected to the plate surface of the transverse partition 80, the other end of the plurality of longitudinal partitions 82 extends toward the direction of the air inlet 50a of the precipitation box 50 and is arranged perpendicular to the plate surface of the transverse partition 80, and the transverse partition 80 is connected to the right side plate 522, the transverse partition 80 and the left side plate 521 have a third distance D3, the top of the transverse partition 80 and the top plate 523 have a third spacing H3, the longitudinal partition 82a closer to the left side plate 521 of the two longitudinal partitions 82 has a fourth distance D4 with the left side plate 521 and a fourth spacing H4 with the bottom plate 524, and the two longitudinal partitions There is a fifth distance D5 between the plates 82, and the longitudinal partition 82b closer to the right side plate 522 of the two longitudinal partitions 82 has a sixth distance D6 with the right side plate 522 and a fifth distance H5 with the bottom plate 524, wherein the third distance D3 can be between 15mm and 25mm, the third distance H3 can be between 20mm and 110mm, the fourth distance H4 and the fifth distance H5 can be between 100mm and 190mm respectively, the fourth distance D4 is 60mm, the fifth distance D5 is 115mm, and the sixth distance D6 is 175mm, thereby greatly improving the yield of solid silicon oxide S precipitation, wherein the number of longitudinal partitions 82 can be one or more than two, and the plate surfaces of the longitudinal partitions 82 and the transverse partitions 80 can also be non-vertically arranged.In this embodiment, the third distance D3 is selected to be between 15 mm and 25 mm because when the third distance D3 is greater than 25 mm, the gas flow speed in the box body 52 is faster, the reaction time is shorter, and the silicon oxide yield rate is likely to decrease. When the third distance D3 is less than 15 mm, the silicon oxide produced between the transverse partition 80 and the left side plate 521 may block the channel C, resulting in a decrease in yield. The fourth distance H4 is selected to be between 100 mm and 190 mm in order to maintain an appropriate distance between the longitudinal partition 82a and the bottom plate 524 so that the gas in the box body 50 can flow smoothly. The fifth distance H5 is selected to be between 100 mm and 190 mm in order to maintain an appropriate distance between the longitudinal partition 82a and the bottom plate 524 so that the gas in the box body 50 can flow smoothly. The range of 100 mm to 190 mm is selected because the longitudinal partition 82b is arranged at a position close to the air inlet 50a and passing through the axis X. Therefore, solid silicon oxide will be concentrated on the longitudinal partition 82b. When the fifth spacing H5, that is, the minimum distance between the longitudinal partition 82b and the air inlet 50a, is less than 100 mm, the silicon oxide produced between the longitudinal partition 82 and the bottom plate 524 may block the channel C, thereby causing a decrease in the yield. In addition, when the fourth spacing H4 and the fifth spacing H5 are greater than 190 mm, the surface area of ​​the longitudinal partition 82 will be indirectly reduced, thereby reducing the silicon oxide yield.

[0025] Please refer to Table 1 below for the example of not setting a partition and selecting Figures 3A to 5 The output rate of silicon oxide obtained by different partition settings is shown in Table 1. The output rate is calculated based on the weight ratio of the output of the solid silicon oxide S to the input solid raw material. According to Table 1, it can be seen that using Figure 5 The partition arrangement shown by providing two longitudinal partitions and one transverse partition can greatly increase the contact area between the partition and the gaseous silicon oxide, thereby obtaining a higher silicon oxide yield.

[0026] Table 1

[0027]

[0028] Please cooperate again Figure 1 The silicon oxide preparation device 1 comprises a heat insulating member 100 disposed on the outer wall of the precipitation box 50, the thermal conductivity of the heat insulating member 100 is between 0.13 and 0.5 W / mK, preferably less than 0.24 W / mK, and the thickness is between 5 and 80 mm. The heat insulating member 100 can be made of carbon fiber or other heat insulating materials. The setting of the heat insulating member 100 can enable the precipitation box 50 to stably maintain a temperature between 200 and 600 degrees.

[0029] In this embodiment, the thermal insulation member 100 is described as one. In other embodiments, the number of the thermal insulation member 100 may be multiple. Figure 6 The precipitation box has a first precipitation part A1 and a second precipitation part A2, the first precipitation part A1 is arranged at a position close to the heater 30 of the heating device relative to the second precipitation part A2, so as to form a temperature gradient between the first precipitation part A1 and the second precipitation part A2, the thermal insulation member 100 includes a first thermal insulation member 102 and a second thermal insulation member 104, the first thermal insulation member 102 is arranged on the outer wall of the first precipitation part A1, the second thermal insulation member 104 is arranged on the outer wall of the second precipitation part A2, and the first thermal insulation member 102 and the second thermal insulation member 104 respectively have different thermal conductivity coefficients, and the thermal conductivity coefficients are between 0.13~0.5 W / mK.

[0030] In this way, the temperature difference between the first precipitation part A1 and the second precipitation part A2 can be controlled by adjusting the thermal conductivity coefficient of the first thermal insulation part 102 and the second thermal insulation part 104. When the temperature difference is closer, the oxygen content of the solid silicon oxide precipitated from the first precipitation part A1 and the second precipitation part A2 is more consistent. For example, the temperature difference can be less than 50 degrees, preferably less than 30 degrees, and most preferably less than 10 degrees. Conversely, when the temperature difference between the first precipitation part A1 and the second precipitation part A2 is greater, the first precipitation part A1 and the second precipitation part A2 can precipitate solid silicon oxide with different oxygen contents. In addition to the above-mentioned ability to control the temperature difference between the first precipitation part A1 and the second precipitation part A2 by adjusting the thermal conductivity of the first thermal insulation member 102 and the second thermal insulation member 104, the temperature difference between the first precipitation part A1 and the second precipitation part A2 can also be controlled by adjusting the thickness of the first thermal insulation member 102 and the second thermal insulation member 104. In this embodiment, the thickness difference between the first thermal insulation member 102 and the second thermal insulation member 104 is 20 mm to 70 mm. In addition, it is not excluded that the first thermal insulation member 102 is only provided in the first precipitation part A1 or the second thermal insulation member 104 is only provided in the second precipitation part A2.

[0031] Please cooperate Figure 7 As shown, it is further explained that in other embodiments, the mask 90 may also be in other shapes and is not limited to the above embodiments. For example, the mask may also be a flat mask 92, which can also achieve the effect of limiting the flow area of ​​the gaseous silicon oxide.

[0032] Please cooperate Figure 8As shown, in other embodiments, the silicon oxide preparation device includes an insulating member 94, and the insulating member 94 can be made of carbon fiber or other insulating materials, and is arranged between the precipitation box and the insulating material 12, so that the precipitation box and the insulating material 12 are spaced a distance D apart. By adjusting the thickness of the insulating member 94, the distance between the precipitation box and the heating device can be controlled, and the temperature of the precipitation box can be controlled, thereby controlling the oxygen content of the solid silicon oxide, that is, the x value of SiOx. For example, when the thickness of the insulating member 94 increases, the spacing distance D between the precipitation box and the insulating material 12 increases, so that the distance between the precipitation box and the heating device increases, and then the temperature of the precipitation box can be reduced. In this embodiment, the distance D is illustrated by taking 300 mm as an example. In other embodiments, the distance D can be less than 300 mm.

[0033] In summary, the silicon oxide preparation device 1 of the present invention can increase the contact area with gaseous silicon oxide and extend the airflow path of gaseous silicon oxide by setting a partition, thereby improving the yield of silicon oxide, and can control the temperature difference between the first precipitation part A1 and the second precipitation part A2 by adjusting the thermal conductivity coefficient of the first thermal insulation member 102 and the second thermal insulation member 104 or the thickness of the first thermal insulation member 102 and the second thermal insulation member 104, thereby controlling the oxygen content of the solid silicon oxide precipitated in the first precipitation part A1 and the second precipitation part A2. In addition, by adjusting the thickness of the thermal insulation member 94, the distance between the precipitation box and the heating device can be controlled, and the temperature of the precipitation box can be controlled, thereby controlling the oxygen content of the solid silicon oxide, that is, the x value of SiOx.

[0034] The above description is only a preferred feasible embodiment of the present invention. Any equivalent changes made by applying the present invention specification and the scope of patent application should be included in the patent scope of the present invention.

[0035] Description of Reference Numerals

[0036] [The present invention]

[0037] 1: Silicon oxide preparation device

[0038] 10: Heating furnace

[0039] 10a: Inner furnace wall

[0040] 100: Thermal insulation

[0041] 102: First thermal insulation

[0042] 104: Second thermal insulation

[0043] 12: Thermal insulation material

[0044] 20: Carrier

[0045] 30: Heater

[0046] 40: Crucible

[0047] 40a: Upper opening

[0048] 50: Separation box

[0049] 50a: Air inlet

[0050] 50b: Air outlet

[0051] 52: Box

[0052] 521: Left side panel

[0053] 522: Right side panel

[0054] 523: Top plate

[0055] 524: Base plate

[0056] 525: Side opening

[0057] 54: Lid

[0058] 60: Exhaust duct

[0059] 60a: First end

[0060] 60b: Second end

[0061] 70: Vacuum device

[0062] 80: Horizontal partition

[0063] 82,82a,82b: Longitudinal partition

[0064] 90,92: Mask

[0065] 94: Insulation

[0066] 90a: Open hole

[0067] A1: First precipitation part

[0068] A2: Second precipitation part

[0069] C: Channel

[0070] D,D1,D2,D3,D4,D5,D6: distance

[0071] H1,H2,H3,H4,H5: Spacing

[0072] H: Height

[0073] R: Heating chamber

[0074] X: Axis

[0075] S: Solid silicon oxide

Claims

1. A device for preparing silicon oxide, comprising: A heating furnace having a heating furnace chamber surrounded by a heat insulating material; a heating device, disposed in the heating furnace cavity; a crucible, disposed in the heating furnace chamber, for containing a solid raw material, wherein the solid raw material comprises silicon dioxide and silicon, and the heating device heats the crucible to form a gaseous silicon oxide from the solid raw material; the crucible has an upper opening; a precipitation box, arranged between the heating furnace cavity and the inner furnace wall of the heating furnace, the precipitation box having an air inlet and an air outlet, the precipitation box comprising at least one partition and arranged in the inner space of the precipitation box, the at least one partition and the inner wall of the precipitation box forming at least one channel, the at least one channel respectively communicating with the air inlet and the air outlet; an exhaust pipe having a first end and a second end, wherein the first end is disposed adjacent to the upper opening of the crucible, and the second end is communicated with the gas inlet of the precipitation box; and an exhaust device connected to the gas outlet of the precipitation box; the exhaust device extracts the gaseous silicon oxide from the crucible so that the gaseous silicon oxide contacts the inner wall of the precipitation box and the surface of the at least one partition to precipitate a solid silicon oxide; in, The at least one partition includes at least one transverse partition, and the at least one transverse partition is transversely arranged in the inner space of the precipitation box and intersects with an axis between the gas inlet and the gas outlet; There are multiple at least one partition, and the multiple partitions include at least one longitudinal partition. The at least one longitudinal partition is longitudinally arranged in the internal space of the precipitation box, and the at least one longitudinal partition is connected to the at least one transverse partition.

2. The silicon oxide preparation device according to claim 1, in, The total length of the at least one channel is greater than a minimum distance between the air inlet and the air outlet.

3. The silicon oxide preparation device according to claim 1, in, One end of the at least one longitudinal partition is connected to the plate surface of the at least one transverse partition, and the other end extends toward the air inlet of the precipitation box.

4. The silicon oxide preparation device according to claim 3, in, The at least one longitudinal partition passes through the axis and has a minimum distance from the air inlet, and the minimum distance is greater than or equal to 100 mm and less than or equal to 190 mm.

5. The silicon oxide preparation device according to claim 1, in, The precipitation box has a first precipitation part and a second precipitation part, and the first precipitation part is arranged at a position close to the heating device relative to the second precipitation part.

6. The device for preparing silicon oxide according to claim 5, in, The invention also includes at least one heat insulating member disposed on an outer wall of at least one of the first precipitation portion or the second precipitation portion.

7. The device for preparing silicon oxide according to claim 6, in, The number of the at least one thermal insulation member is multiple, and the multiple thermal insulation members include a first thermal insulation member and a second thermal insulation member, the first thermal insulation member is arranged on the outer wall of the first precipitation portion, the second thermal insulation member is arranged on the outer wall of the second precipitation portion, and the first thermal insulation member and the second thermal insulation member have different thermal conductivity coefficients.

8. The device for preparing silicon oxide according to claim 7, in, The thermal conductivity of the first thermal insulation member and the second thermal insulation member is between 0.13 and 0.5 W / mK.

9. The device for preparing silicon oxide according to claim 6, in, The number of the at least one thermal insulation member is multiple, and the multiple thermal insulation members include a first thermal insulation member and a second thermal insulation member, the first thermal insulation member is arranged on the outer wall of the first precipitation portion, the second thermal insulation member is arranged on the outer wall of the second precipitation portion, and the first thermal insulation member and the second thermal insulation member have different thicknesses.

10. The silicon oxide preparation device according to claim 1, in, The thermal conductivity of the at least one partition is greater than or equal to 16 W / mK.

11. The silicon oxide preparation device according to claim 1, in, The invention comprises a mask covering the crucible, wherein the mask has an opening, and the opening is connected with the first end of the exhaust pipe and the interior of the crucible.

12. The silicon oxide preparation device according to claim 1, in, A heat insulating member is included, which is arranged between the precipitation box and the heat insulating material to ensure that a distance is set between the precipitation box and the heat insulating material.

13. The device for preparing silicon oxide according to claim 1, in, The air extraction device is a cyclone dust collector.

14. The device for preparing silicon oxide according to claim 1, in, The precipitation box comprises a box body and a box cover, wherein the box body has a side opening, and the box cover is used to close the side opening. There are multiple at least one partition, and the multiple partitions are respectively connected to the inner wall of the box body and the box cover.

15. The device for preparing silicon oxide according to claim 14, in, When the box cover closes the side opening, the partitions connected to the inner wall of the box body and the partitions connected to the box cover are arranged alternately.

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