Light-emitting device

Abstract

The present invention discloses a light-emitting device, which includes a light-emitting unit. The light-emitting unit emits an outgoing light, and the outgoing light has a spectrum. The spectrum has a main peak between 520 nanometers and 780 nanometers, and the spectrum has a sub-peak corresponding to a wavelength between 400 nanometers and 470 nanometers. The spectrum includes a first sub-peak integral from the wavelength minus 20 nanometers to the wavelength, and the spectrum includes a second sub-peak integral from the wavelength to the wavelength plus 20 nanometers, and the ratio of the first sub-peak integral to the second sub-peak integral ranges from 20% to 98%.

Description

[0001] This application is a divisional application of the invention patent application with an application date of October 9, 2019, application number 201910955089.X, and invention name “Light-emitting device”. Technical Field

[0002] The present invention relates to a light emitting device, and in particular to a light emitting device comprising a light conversion element. Background Art

[0003] In conventional light-emitting devices, green light and red light are often mixed to generate light of other colors (e.g., yellow light). However, in conventional light-emitting devices, for an observer, the color of the light (e.g., yellow light) appears to be blue in terms of photopic vision. Therefore, the present invention provides a light-emitting device that can reduce the above problem. Summary of the invention

[0004] In some embodiments, a light emitting device includes a light emitting unit, which emits an outgoing light, and the outgoing light has a spectrum. The spectrum has a main peak between 520 nanometers (nm) and 780 nanometers, and the spectrum has a sub-peak corresponding to a wavelength between 400 nanometers and 470 nanometers. The spectrum includes a first sub-peak integral from the wavelength minus 20 nanometers to the wavelength, and the spectrum includes a second sub-peak integral from the wavelength to the wavelength plus 20 nanometers, and the ratio of the first sub-peak integral to the second sub-peak integral ranges from 20% to 98%. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 FIG. 1 is a cross-sectional schematic diagram of a light emitting device according to a first embodiment of the present invention.

[0006] Figure 2 It is a schematic diagram of the spectrum of the emitted light emitted by the first light-emitting unit or the second light-emitting unit of the first embodiment.

[0007] Figure 3 FIG. 4 is a schematic diagram of the spectrum of the light emitted by the first light-emitting unit and the second light-emitting unit of the first embodiment.

[0008] Figure 4 This is the CIE 1931 chromaticity coordinate diagram.

[0009] Figure 5 for Figure 4 An enlarged view of the region G is shown and points showing different emitted lights emitted by the first light emitting unit.

[0010] Figure 6 for Figure 4 An enlarged view of the region R is shown and points showing different emitted lights emitted by the second light emitting unit.

[0011] Figure 7 FIG. 4 is a cross-sectional schematic diagram of a light emitting device according to a second embodiment.

[0012] Figure 8 FIG. 4 is a schematic cross-sectional view of a light emitting device according to a third embodiment.

[0013] Explanation of reference numerals: 10-light-emitting device; 100-first substrate; 102-second substrate; 1041-spacer; 1042-light modulation layer; 106-shielding structure; 1081, 1082-polarizer; 110-optical film; 112, 122-light source; 114-light guide plate; 116-optical layer; 118-isolation structure; 120-flat layer; AP-opening; BF-blocking structure; BL-backlight module; CE-chromaticity diagram boundary; CGL-charge generation layer; CL1, CL2-light; DP-panel ; EIL2, EIL1-electron injection layer; EL1-first electrode; EL2-second electrode; ETL2, ETL1-electron transport layer; G, R, Y, CS-region; G0, G1, G2, G3, R0, R1, R2, R3, R4-point; HIL2, HIL1-hole injection layer; HTL2, HTL1-hole transport layer; I1, I2-intensity; IL1, IL2-incident light; LA-light absorbing material; LCE1, LCE2, LCE3-light conversion element; LE-light emitting element; LE 1-first light-emitting element; LE2-second light-emitting element; LE3-third light-emitting element; LEL2, LEL1-light-emitting structure; LS-spectrum; LS1-first spectrum; LS2-second spectrum; LU1-first light-emitting unit; LU2-second light-emitting unit; LU3-third light-emitting unit; MI-intensity integral; MP1, MP2-main wave peak; MW, MW1, MW2-main wave; OL1-first light; OL2-second light; OL3-third light; PDL-pixel definition layer; PL-protective layer; QD1 -quantum dots; SI1, SI11, SI12-integral of the first sub-peak; SI2, SI21, SI22-integral of the second sub-peak; SI3-integral of the third sub-peak; SI4-integral of the fourth sub-peak; SI51, SI52-integral of the fifth sub-peak; SI61, SI62-integral of the sixth sub-peak; SP1-first sub-peak; SP2-second sub-peak; SU-substrate; SW, SW1, SW2-sub-peak; V-normal direction; Wm, W1, W2, W3, W4, W5, W11, W12-wavelength. DETAILED DESCRIPTION

[0014] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the understanding of the readers and simplify the drawings, the multiple drawings in the present invention only depict a portion of the electronic device, and the specific components in the drawings are not drawn according to the actual scale. In addition, the number and size of each component in the drawings are only for illustration and are not intended to limit the present invention.

[0015] Certain words are used throughout the specification and claims to refer to specific components. Those skilled in the art will appreciate that electronic equipment manufacturers may refer to the same components by different names. In the following specification and claims, the words "including" and "comprising" are open-ended words and should be interpreted as "including but not limited to..."

[0016] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0017] The terms "about," "substantially," "equal to," or "same as" typically mean within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0018] Although the terms first, second, third, etc. can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third, etc. according to the order in which the components are declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0019] It should be noted that the following embodiments may be implemented by replacing, reorganizing, or mixing the technical features in several different embodiments without departing from the spirit of the present invention.

[0020] Please refer to Figure 1 , Figure 1Schematic cross-sectional view of a light emitting device according to a first embodiment of the present invention. The light emitting device may include a display device, an electronic device, a flexible device or other suitable device, but is not limited thereto. In some embodiments, the light emitting device may be applied to a tiled device. For example, the light emitting device 10 may be a display device, which may include a panel DP and a backlight module BL, and the panel DP is arranged relative to the backlight module BL. The panel DP may include a first substrate 100, a second substrate 102, and a light modulation layer 1042 arranged between the first substrate 100 and the second substrate 102. The first substrate 100 may be arranged between the light modulation layer 1042 and the backlight module BL. The first substrate 100 and / or the second substrate 102 may include a transparent substrate, such as a rigid substrate (such as a glass substrate, a quartz substrate), a flexible substrate (such as a plastic substrate), or a combination thereof, but is not limited thereto. The material of the plastic substrate may include, for example, polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET), but is not limited thereto. In one embodiment, the light emitting device includes a liquid crystal panel, the light modulation layer 1042 may include a liquid crystal layer, and some spacers 1041 may be disposed between the first substrate 100 and the second substrate 102. In addition, the panel DP may include an alignment layer (e.g., a polyimide layer), an electrode (e.g., a pixel electrode or a common electrode), or a shielding structure 106, but not limited thereto. The first substrate 100 may include an array substrate. The second substrate 102 may include a color filter layer substrate or a protective substrate, but not limited thereto. For example, a transistor, a signal line, a scan line, a data line, or an insulating layer may be disposed on the first substrate 100, but not limited thereto. For example, the shielding structure 106 may be disposed between the second substrate 102 and the first substrate 100. The shielding structure 106 may include a plurality of openings, and the light conversion element LCE1, the light conversion element LCE2, or the light conversion element LCE3 may be disposed in the corresponding openings of the shielding structure 106. The material of the shielding structure 106 may include black photoresist, black printing ink, black resin, or other suitable materials or a combination of the above materials, but not limited thereto.

[0021] The panel DP may further include a polarizer 1081 and / or a polarizer 1082. The polarizer 1081 may be disposed between the first substrate 100 and the backlight module BL, and the polarizer 1082 may be disposed between the light conversion element (e.g., light conversion element LCE1, light conversion element LCE2, or light conversion element LCE3) and the light modulation layer 1042. However, the locations of the polarizer 1081 and the polarizer 1082 are not limited to the above. In some embodiments, the light emitting device has a light modulation layer 1042 (e.g., liquid crystal), and the light modulation layer 1042 may be disposed between the polarizer 1081 and the polarizer 1082 to adjust the grayscale, and the light conversion element is not disposed between the two polarizers. In some embodiments, the polarizer 1081 and / or the polarizer 1082 are disposed between the first substrate 100 and the second substrate 102, and the polarizer 1081 and / or the polarizer 1082 may include a metal wire, i.e., a metal wire grid polarizer (wiregrid polarizer, WGP), but is not limited thereto. The material of the metal wire includes metal, metal alloy, other suitable materials, or a combination of the above materials, but is not limited thereto. In some embodiments, the first substrate 100 and the second substrate 102 may be disposed between the polarizer 1081 and the polarizer 1082, and the materials of the polarizer 1081 and the polarizer 1082 may include a protective film, triacetate cellulose (triacetate cellulose, TAC), polyvinyl alcohol (polyvinyl alcohol, PVA), pressure sensitive adhesive (pressure sensitive adhesive, PSA) or a release film, but is not limited thereto. In addition, the panel DP may also include at least one optical film 110 disposed between the panel DP and the backlight module BL. In some embodiments, the optical film 110 includes a reflective polarizing duel brightness enhancement film (DBEF), a prism film, other suitable optical films, or a combination of the above materials, but is not limited thereto.

[0022] The backlight module BL may include a light source 112 and a light guide plate 114. Figure 1 As shown, the backlight module BL may include an edge-lit backlight module, and the light source 112 may be disposed adjacent to at least one side wall of the light guide plate 114, but not limited thereto. The light source 112 may include a light emitting diode (LED), a micro LED, a sub-millimeter light emitting diode (mini LED), an organic LED (OLED), a fluorescent material, a phosphorescent material, other suitable light sources, or a combination of the above materials, but not limited thereto. In one embodiment, the backlight module BL may emit blue light or ultraviolet light, but not limited thereto.

[0023] like Figure 1 As shown, the light emitting device 10 may include a first light emitting unit LU1, a second light emitting unit LU2 and / or a third light emitting unit LU3. The first light emitting unit LU1 includes a first light emitting element LE1 and a first light conversion element LCE1, the second light emitting unit LU2 includes a second light emitting element LE2 and a second light conversion element LCE2, and the third light emitting unit LU3 includes a third light emitting element LE3 and a third light conversion element LCE3. One of the above light emitting units may, for example, correspond to a vertically stacked layer (or element) structure of a portion of the light emitting device 10. For example, one of the above light emitting units may be a portion of the light emitting device 10 that emits a color of light (such as red, green or blue, but not limited thereto). One of the above light emitting units may correspond to one of the openings in the shielding structure 106. In one of the light emitting units, the light conversion element may be disposed on the light emitting element. For example, the first light conversion element LCE1 is disposed on the first light emitting element LE1, the second light conversion element LCE2 is disposed on the second light emitting element LE2, and the third light conversion element LCE3 is disposed on the third light emitting element LE3. In addition, the light modulation layer 1042 may be disposed between the light emitting element and the light conversion element.

[0024] Figure 1 In the normal direction V, a portion of the backlight module BL corresponding to the first light conversion element LCE1 (e.g., a portion of the light guide plate 114) can be regarded as the first light emitting element LE1; a portion of the backlight module BL corresponding to the second light conversion element LCE2 can be regarded as the second light emitting element LE2; a portion of the backlight module BL corresponding to the third light conversion element LCE3 can be regarded as the third light emitting element LE3. The normal direction V is, for example, perpendicular to the first substrate 100.

[0025] The first light conversion element LCE1, the second light conversion element LCE2 or the third light conversion element LCE3 may include quantum dots, fluorescent materials, phosphorescent materials, color filter layers, other suitable materials or combinations of the above materials, but not limited thereto. The quantum dots may be formed by semiconductor nanocrystal structures, and may include cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc sulfide (ZnS), mercury telluride (HgTe), indium arsenide (InAs), alloys (Cd1-xZnxSe1-ySy), cadmium selenide / zinc sulfide, indium phosphide (InP) and gallium arsenide (GeAs), but not limited thereto. The quantum dots may have a particle size between 1 nanometer (nm) and 30 nanometers, between 1 nanometer and 20 nanometers, or between 1 nanometer and 10 nanometers. In one embodiment, the quantum dots may be excited by the incident light emitted by the backlight module BL, and the incident light may be converted by the quantum dots into emitted light with different wavelengths. The color of the emitted light can be adjusted by the material and / or size of the quantum dots. In another embodiment, the quantum dots can emit light with a suitable color, and the quantum dots can include spherical particles, cylindrical particles, or particles with any other suitable shape.

[0026] like Figure 1 As shown, the first light conversion element LCE1 may include a quantum dot QD1, and the quantum dot QD1 may be excited by a portion of the incident light IL1, and the portion of the incident light IL1 may be converted into a light CL1 by the quantum dot QD1. Since the conversion efficiency of the quantum dot may not be 100%, another portion of the incident light IL1 may not be converted into the light CL1, for example, and the first light OL1 may be, for example, a mixed light of the light CL1 and the unconverted incident light IL1. The first light OL1 may be the outgoing light emitted by the first light emitting unit LU1. In the present invention, the outgoing light may be, for example, the final visible light emitted from the light emitting device 10 and seen by the observer.

[0027] like Figure 1 As shown, the second light conversion element LCE2 may include a quantum dot QD2, which may be excited by a portion of the incident light IL2, and the portion of the incident light IL2 may be converted into a light CL2 by the quantum dot QD2. The quantum dot QD2 may be different from the quantum dot QD1. The second light OL2 may be a mixed light of the light CL2 and the unconverted incident light IL2. The second light OL2 may be the outgoing light emitted by the second light emitting unit LU2.

[0028] In one embodiment, the third light OL3 emitted by the third light emitting unit LU3 may be blue light. Since the third light emitting element LE3 emits blue light, the third light conversion element LCE3 may be selectively replaced by a transparent layer, wherein the transparent layer may not have quantum dots. The transparent layer may include a transparent dielectric material, but is not limited thereto. In some embodiments, the third light conversion element LCE3 may include a blue color filter layer. In some embodiments, the third electronic unit EU3 may not include the third light conversion element LCE3. In some embodiments, the third light conversion element LCE3 may include a suitable type of quantum dots to adjust the wavelength of the third light OL3.

[0029] In some embodiments, a plurality of light absorbing materials LA may be disposed in the first light conversion element LCE1 and / or the second light conversion element LCE2. In some embodiments, the light absorbing material LA may be disposed on the first light conversion element LCE1 and / or the second light conversion element LCE2. For example, the light absorbing material LA may be mixed in a suitable film layer on the first light conversion element LCE1 and / or the second light conversion element LCE2. The light absorbing material LA may be used to absorb a portion of the unconverted incident light IL1 (and / or a portion of the unconverted incident light IL2), and may reduce the amount of the unconverted incident light IL1 (and / or the incident light IL2). The light absorbing material LA may include benzotriazole, titanium dioxide (TiO2), zirconium dioxide (ZrO2), other suitable materials, or a combination of the above materials, but is not limited thereto. Benzotriazole, titanium dioxide, or zirconium dioxide may absorb light with a wavelength less than 450 nanometers or less than 400 nanometers, but is not limited thereto.

[0030] For example, the content ratio of benzotriazole in the light absorbing material LA may range from 0.1% to 20.2% (0.1%≤content ratio≤20.2%), and the content ratio of titanium dioxide in the light absorbing material LA may range from 0.2% to 19.6% (0.2%≤content ratio≤19.6%). In this case, the transmittance of the light absorbing material LA for light with a wavelength of 450 nanometers may range from 86.5% to 91.2% (86.5%≤transmittance≤91.2%), the transmittance of the light absorbing material LA for light with a wavelength of 400 nanometers may range from 1.66% to 11.8% (1.66%≤transmittance≤11.8%), and the transmittance of the light absorbing material LA for light with a wavelength of 380 nanometers may range from 0.0005% to 0.005% (0.0005%≤transmittance≤0.005%). The content ratio of different materials can be adjusted according to needs.

[0031] In addition, the light absorbing material LA may include a yellow pigment (Y-pigment), a yellow dye (Y-dye), a yttrium aluminum garnet (YAG) phosphorescent material, other suitable materials or a combination of the above materials, but not limited thereto. The Y-pigment may include C16H12Cl2N4O4, Y184, Y185, Y189, Y194, Y213, Y120, Y128, Y138, Y139, Y150 or Y151. The Y-dye may include C26H18N4Na2O8S2. The yttrium aluminum garnet phosphorescent material may include YAG:Ce3+, Y3Al5O12:Ce3+, or other commercially available yttrium aluminum garnet phosphorescent materials, but not limited thereto.

[0032] Please refer to Figure 2 , Figure 2 Schematic diagram of the spectrum of the outgoing light emitted by the first light emitting unit or the second light emitting unit of the first embodiment. The spectrum of the first light OL1 and the second light OL2 may have similar features or characteristics. The features of the spectrum LS described below may be applied to the first light emitting unit LU1 and the second light emitting unit LU2.

[0033] exist Figure 2 In the spectrum LS, the main wave MW may include a main wave MW and a sub-wave SW. The main wave MW may represent the light CL1 (or the light CL2) converted by the first light conversion element LCE1 (or the second light conversion element LCE2). The main wave peak of the main wave MW may correspond to the wavelength Wm, and the wavelength Wm may range from 520 nanometers to 780 nanometers. The "main wave peak of the main wave" may be defined as the peak of the main wave MW. In other spectra, the "main wave peak of the main wave" may also be defined as described above. In addition, a portion of the incident light may be converted by the first light conversion element LCE1 (or the second light conversion element LCE2), and the intensity of the main wave peak of the main wave MW is greater than the intensity of the sub-wave peak of the sub-wave SW.

[0034] The sub-wave SW may represent the unconverted incident light IL1 in the first light OL1 (or the unconverted incident light IL2 in the second light OL2). It is noteworthy that the sub-wave SW corresponds to the unconverted incident light. The sub-wave peak of the sub-wave SW corresponds to the wavelength W1 in the range of 400 nanometers to 470 nanometers, so the sub-wave SW may correspond to blue light. The "sub-wave peak of the sub-wave" is defined as the peak of the sub-wave SW. In other spectra, the "sub-wave peak of the sub-wave" may also be defined as described above. In some embodiments, the light absorbing material LA may have a greater absorbance for light with a shorter wavelength (for example, less than or equal to 400 nanometers, but not limited thereto), and the waveform of the sub-wave SW may be asymmetric. As Figure 2As shown in the enlarged view (a) of the neutron wavelet SW, the first sub-peak integral SI1 of the spectrum LS is the intensity integral of a portion of the waveform of the sub-wavelet SW. The first sub-peak integral SI1 is calculated by superimposing from the wavelength W1 minus 20 nanometers (W1(nm)-20nm) to the wavelength W1. In addition, the second sub-peak integral SI2 of the spectrum LS is the intensity integral of another portion of the waveform of the sub-wavelet SW. The second sub-peak integral SI2 is calculated by superimposing from the wavelength W1 to the wavelength W1 plus 20 nanometers (W1(nm)+20nm). The waveform of the sub-wavelet SW may be asymmetric, the second sub-peak integral SI2 may be different from the first sub-peak integral SI1, and the second sub-peak integral SI2 may be greater than the first sub-peak integral SI1. The ratio (SI1 / SI2) of the first sub-peak integral SI1 to the second sub-peak integral SI2 is in the range of 20% to 98% (20%≤SI1 / SI2≤98%).

[0035] In addition, the intensity integral MI of the main wave MW can be calculated by superposition from 521 nm to 780 nm. The ratio of the first sub-peak integral SI1 to the intensity integral MI of the main wave MW can range from 0.05% to 2% (0.05%≤SI1 / MI≤2%), and the ratio of the second sub-peak integral SI2 to the intensity integral MI of the main wave MW can range from 0.05% to 10% (0.05%≤SI2 / MI≤10%).

[0036] like Figure 2 As shown in the enlarged view (b) of the neutron wavelet SW, the sub-wave peak of the sub-wavelet SW can correspond to the intensity I1, and the wavelengths W2 and W3 respectively correspond to the intensity I2 (half the intensity of the intensity I1), wherein the wavelength W2 is smaller than the wavelength W3. The intensity integral of the sub-wavelet SW of the spectrum LS calculated by superimposing the wavelengths W4 to W2 can be defined as the third sub-wave peak integral SI3, wherein the wavelength W4 is equal to the wavelength W2 minus 20 nanometers (W4 (nm) = W2 (nm) - 20nm). Another intensity integral of the sub-wavelet SW of the spectrum LS calculated by superimposing the wavelengths W3 to W5 can be defined as the fourth sub-wave peak integral SI4, wherein the wavelength W5 is equal to the wavelength W3 plus 20 nanometers (W5 (nm) = W3 (nm) + 20nm). The third sub-peak integral SI3 is different from the fourth sub-peak integral SI4, and the ratio (SI3 / SI4) of the third sub-peak integral SI3 to the fourth sub-peak integral SI4 ranges from 4% to 30% (4%≤SI3 / SI4≤30%).

[0037] Please refer to Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the spectrum of the light emitted by the first light emitting unit and the second light emitting unit of the first embodiment. Figure 3In the spectrum diagram (a), the first light OL1 emitted by the first light emitting unit LU1 has a first spectrum LS1 including a main wave MW1 and a sub-wave SW1, and the second light OL2 emitted by the second light emitting unit LU2 has a second spectrum LS2 including a main wave MW2 and a sub-wave SW2. The main wave MW1 and the main wave MW2 can correspond to Figure 1 In the light CL1 and the light CL2, the main wave MW1 may have a main wave peak MP1 between 525 nanometers and 585 nanometers, and the main wave MW2 may have a main wave peak MP2 between 595 nanometers and 775 nanometers. Figure 3 The spectrum of SW1 and SW2 can be respectively corresponded to Figure 1 The incident light IL1 that is not converted and the incident light IL2 that is not converted. Figure 3 As shown in the spectrum diagram (a), the sub-wave SW1 may have a first sub-wave peak SP1 between 400 nanometers and 470 nanometers, and the sub-wave SW2 may have a second sub-wave peak SP2 between 400 nanometers and 470 nanometers. The intensity of the first sub-wave peak SP1 may be different from the intensity of the second sub-wave peak SP2. For example, the intensity of the first sub-wave peak SP1 may be greater than the intensity of the second sub-wave peak SP2, but it is not limited thereto.

[0038] like Figure 3 As shown in the enlarged view (b) of the sub-wave SW1 and the sub-wave SW2, similar to the above content, the sub-wave SW1 in the first spectrum LS1 may have a first sub-wave peak integral SI11 and a second sub-wave peak integral SI21, and the sub-wave SW2 in the second spectrum LS2 may have a first sub-wave peak integral SI12 and a second sub-wave peak integral SI22. The first sub-peak SP1 of the first spectrum LS1 may correspond to the wavelength W11, and the second sub-peak SP2 of the second spectrum LS2 may correspond to the wavelength W12, wherein Figure 3 The wavelength W11 and the wavelength W12 in the figure may be the same, but are not limited thereto. In some embodiments, the wavelength W11 and the wavelength W12 may be different. The first sub-peak integral SI11 may be calculated by superimposing the wavelength W11 minus 20 nanometers (W11(nm)-20nm) to the wavelength W11, and the second sub-peak integral SI21 may be calculated by superimposing the wavelength W11 to the wavelength W11 plus 20 nanometers (W11(nm)+20nm). For example, the first sub-peak integral SI11 may be calculated by the formula The second sub-peak integral SI21 can be calculated by the formula , where I is the intensity of sub-wave SW1, and λ is the wavelength. The first sub-wave peak integral SI12 can be calculated by superimposing the wavelength W12 minus 20 nanometers (W12(nm)-20nm) to the wavelength W12, and the second sub-wave peak integral SI22 can be calculated by superimposing the wavelength W12 to the wavelength W12 plus 20 nanometers (W12(nm)+20nm). For example, the first sub-wave peak integral SI12 can be calculated by the formula The second sub-peak integral SI22 can be calculated by the formula Calculated as, where I is the intensity of sub-wave SW2, and λ is the wavelength. In some embodiments, the ratio of the first sub-wave peak integral SI11 to the second sub-wave peak integral SI21 of the first spectrum LS1 (SI11 / SI21) is different from the ratio of the first sub-wave peak integral SI12 to the second sub-wave peak integral SI22 of the second spectrum LS2 (SI12 / SI22).

[0039] like Figure 3 As shown in the enlarged view (c) of the sub-wave SW1 and the sub-wave SW2, the fifth sub-peak integral SI51 of the sub-wave SW1 of the first spectrum LS1 can be obtained by superimposing and calculating from 380 nanometers to the wavelength W11 of the first sub-peak SP1, and the sixth sub-peak integral SI61 of the sub-wave SW1 of the first spectrum LS1 can be obtained by superimposing and calculating from the wavelength W11 of the first sub-peak SP1 to 520 nanometers. For example, the fifth sub-peak integral SI51 can be obtained by the formula The sixth sub-peak integral SI61 can be calculated by the formula , where I is the intensity of the sub-wave SW1, and λ is the wavelength. In addition, the fifth sub-wave peak integral SI52 of the sub-wave SW2 of the second spectrum LS2 can be calculated by superimposing from 380 nanometers to the wavelength W12 of the second sub-wave peak SP2, and the sixth sub-wave peak integral SI62 of the sub-wave SW2 of the second spectrum LS2 can be calculated by superimposing from the wavelength W12 of the second sub-wave peak SP2 to 520 nanometers. For example, the fifth sub-wave peak integral SI52 can be calculated by the formula The sixth sub-peak integral SI62 can be calculated by the formula Calculated, where I is the intensity of sub-wave SW2, and λ is the wavelength. In some embodiments, the ratio of the fifth sub-wave peak integral SI51 to the sixth sub-wave peak integral SI61 (SI51 / SI61) is different from the ratio of the fifth sub-wave peak integral SI52 to the sixth sub-wave peak integral SI62 (SI52 / SI62).

[0040] In some embodiments, the first light OL1 may be green light, the second light OL2 may be red light, and the third light may be blue light, but the present invention is not limited thereto. In some embodiments, the light emitting device 10 may include other light emitting units that may emit light of a different color from the first light OL1, the second light OL2, and the third light OL3. In some embodiments, the light emitting device 10 may include other light emitting units that may emit light of different wavelengths.

[0041] Please refer to Figures 4 to 6 , Figure 4 is the chromaticity coordinate diagram of CIE 1931, Figure 5 for Figure 4 The enlarged view of the region G shown shows the points (chromaticity points) of different emitted lights emitted by the first light-emitting unit, Figure 6 for Figure 4 The enlarged view of the region R shown in FIG. 1 shows the points (chromaticity points) of different emitted lights emitted by the second light emitting unit. The color gamut can usually be represented by Figure 4 The area in the CIE1931 chromaticity coordinate diagram represents the wavelength. The numbers marked along the chromaticity diagram border represent the wavelength. Figure 4 , the color of light having an xy coordinate located in region Y may be yellow or yellowish.

[0042] exist Figure 5 , the region CS represents the color space of the light emitting device 10, wherein the point (chromaticity point) G0 may represent the primary green color, and the point (chromaticity point) G1, the point (chromaticity point) G2 and / or the point (chromaticity point) G3 may correspond to the xy coordinates of the first light OL1 emitted by the first light emitting unit LU1 in some embodiments, but the present invention is not limited thereto. The xy coordinates of the point G0, the point G1, the point G2 and the point G3 may be as follows: G0xy=(0.17, 0.797), G1xy=(0.26, 0.705), G2xy=(0.27, 0.699), G3xy=(0.275, 0.698). By comparing point G1, point G2 and / or point G3 with point G0, the color of the first light OL1 can be adjusted toward region Y, for example, and the intensity of the blue light in the first light OL1 can be reduced, so that the color of the first light OL1 can be more yellow, or under the same intensity of green light, the human eye can perceive a higher brightness. In some embodiments, the reduction in the intensity of the blue light in the first light OL1 can be caused by the introduction of the light absorbing material LA. In some embodiments, the xy coordinates of the first light OL1 can fall in region G of the chromaticity coordinate diagram. For example, the green x coordinate value of the light emitting device 10 in the CIE 1931 color gamut ranges from 0.17 to 0.29 (0.17≤x≤0.29), and the green y coordinate value of the light emitting device 10 in the CIE 1931 color gamut ranges from 0.675 to 0.797 (0.675≤y≤0.797).

[0043] like Figure 6 As shown, point R0 represents the red primary color, and point (chromaticity point) R1, point (chromaticity point) R2, point (chromaticity point) R3 and / or point (chromaticity point) R4 may correspond to the xy coordinates of the second light OL2 emitted by the second light emitting unit LU2 in some embodiments. The xy coordinates of point R0, point R1, point R2, point R3 and point R4 may be as follows: R0xy=(0.708, 0.292), R1xy=(0.693, 0.303), R2xy=(0.6915, 0.3035), R3xy=(0.687, 0.3045), R4xy=(0.684, 0.3082). By comparing point R1, point R2, point R3 and / or point R4 with point R0, the color of the second light OL2 can be adjusted toward region Y, for example, and the intensity of the blue light in the second light OL2 can be reduced, so that the color of the second light OL2 can be more yellow, or under the same intensity of red light, the human eye can perceive a higher brightness. In some embodiments, the reduction in the intensity of the blue light in the second light OL2 can be obtained by adding a light absorbing material LA. In some embodiments, the xy coordinates of the second light OL2 can be located in region R of the chromaticity coordinate diagram. For example, the red x coordinate value of the light emitting device 10 in the CIE 1931 color gamut ranges from 0.68 to 0.708 (0.68≤x≤0.708), and the red y coordinate value ranges from 0.292 to 0.31 (0.292≤y≤0.31).

[0044] Since the blue light (i.e., the sub-wave SW in the spectrum LS) in the first light OL1 and the second light OL2 is reduced, or the chance of the light mixed by the first light OL1 and / or the second light OL2 moving toward the blue region is reduced, the light emitting device 10 can obtain or provide light with yellow or yellowish color. In some embodiments, the light emitting device 10 may not selectively need to be provided with a yellow light emitting unit. When the color space of the light emitting device 10 is adjusted (for example, reducing blue light), the visual experience of the observer can be improved.

[0045] The spectrum can be measured, for example, by a spectroradiometer. When measuring, the spectroradiometer can be disposed on a side of the light emitting device 10 away from the backlight module BL or the light emitting element. When measuring, the light emitting device 10 can, for example, turn on at least one first light emitting unit LU1 (or at least one second light emitting unit LU2), and the light emitting device 10 can emit a first light OL1 (or a second light emitting unit OL2). When measuring, the first light emitting unit LU1 or the second light emitting unit LU2 can, for example, operate at a maximum grayscale. The spectroradiometer can include, but is not limited to, CA-210, CS 1000T, CA-310, CA410, CS 2000 or other suitable instruments.

[0046] The technical features of different embodiments of the present invention may be replaced, reorganized or mixed. In order to facilitate the comparison of the differences between these implementations, the following content will describe the differences between different embodiments in detail, and the same technical features will not be repeated.

[0047] Please refer to Figure 7 , Figure 7 is a schematic cross-sectional view of the light-emitting device of the second embodiment. Different from the first embodiment, the light conversion elements (such as the first light conversion element LCE1, the second light conversion element LCE2 and the third light conversion element LCE3) may be disposed in the backlight module BL. In some embodiments, the light conversion elements (such as the first light conversion element LCE1, the second light conversion element LCE2 and the third light conversion element LCE3) may be disposed between the optical layer 116 and the panel DP. In some embodiments, the light conversion elements may be disposed on the optical layer 116 and separated by the isolation structure 118 to form an optical structure, which may be, for example, referred to as a "quantum dot color filter on a light guide plate" structure. In some embodiments, the light conversion elements may be covered by the flat layer 120, but are not limited thereto. In some embodiments, the optical layer 116 may include a light guide plate, a diffuser plate or other optical film layer (or plate). The material of the isolation structure 118 and the material of the flat layer 120 may include a transparent material, an insulating material, other suitable materials or a combination of the above materials, but are not limited thereto. Figure 7 In one embodiment, the backlight module BL is a direct-type backlight module, and the backlight module BL may include a plurality of light sources 122 disposed under the optical layer 116 .

[0048] In some embodiments, a plurality of blocking structures BF may be disposed on the first light conversion element LCE1 and the second light conversion element LCE2, for example, respectively, and the light absorbing material LA may be disposed in the blocking structures BF. Figure 7As shown. In some embodiments, the light absorbing material LA may be disposed on a light emitting element (e.g., a first light emitting element LE1 and a second light emitting element LE2) and / or a light conversion element (e.g., a first light conversion element LCE1 and a second light conversion element LCE2). In some embodiments, the blocking structure BF may be in contact with the top surface (or other surface) of the first light conversion element LCE1 (and / or the second light conversion element LCE2), but is not limited thereto. In some embodiments, the blocking structure BF may include a yellow, red, or green color filter, but is not limited thereto. It should be noted that the blocking structure BF may include a main material and at least one blocking material (or light absorbing material LA) disposed in the main material, but is not limited thereto. The main material of the blocking structure BF may include a transparent material, an insulating material, other suitable materials, or a combination of the above materials, but is not limited thereto. The blocking material may, for example, block or filter at least part of the blue light, but is not limited thereto. The blocking material may be similar to the light absorbing material LA, so it will not be repeated here. In some embodiments, the blocking structure BF may be disposed in the opening AP of the shielding structure 106 of the first light emitting unit LU1 and / or the second light emitting unit LU2 , but is not limited thereto.

[0049] According to some embodiments (such as Figure 7 ), in the normal direction V, a portion of the light source 122 corresponding to the first light conversion element LCE1 and a portion of the optical layer 116 can be regarded as the first light emitting element LE1. In addition, the second light emitting element LE2 and the third light emitting element LE3 can also be defined by the above method. In some embodiments, the third light conversion element LCE3 may include a quantum dot QD3, and the quantum dot QD3 may be excited by at least a portion of the incident light emitted by the third light emitting element LE3, and the quantum dot QD3 converts the portion of the incident light into blue light with a different main peak wavelength.

[0050] Please refer to Figure 8 , Figure 8 1 is a cross-sectional view of a light emitting device according to a third embodiment. In some embodiments, the light emitting device 10 may include an organic light emitting diode (OLED). The light emitting elements (e.g., the first light emitting element LE1, the second light emitting element LE2, and the third light emitting element LE3) may share a light emitting element LE, but the present invention is not limited thereto. The common light emitting element LE may include at least one light emitting structure. For example, Figure 8As shown, in the normal direction V, the light-emitting element LE includes a plurality of second electrodes EL2, a hole injection layer HIL2, a hole transport layer HTL2, a light-emitting structure LEL2, an electron transport layer ETL2, an electron injection layer EIL2, a charge generation layer CGL, a hole injection layer HIL1, a hole transport layer HTL1, a light-emitting structure LEL1, an electron transport layer ETL1, an electron injection layer EIL1 and a first electrode EL1 stacked in sequence on a thin film transistor substrate, but is not limited thereto.

[0051] The light emitting structure LEL1 and the light emitting structure LEL2 may include organic light emitting materials or quantum dots, other suitable materials or a combination of the above materials, but not limited thereto. The second electrode EL2 may be one of the cathode or the anode, and the first electrode EL1 may be the other of the cathode or the anode. The second electrode EL2 is, for example, separately arranged in the corresponding light emitting unit. The second electrode EL2 may be arranged on the protective layer PL, and the pixel definition layer PDL (pixel definition layer, PDL) may be arranged on the second electrode EL2. One of the openings of the pixel definition layer PDL may correspond to one of the second electrodes EL2, and part of the second electrode EL2 may be exposed through the opening of the pixel definition layer PDL. One of the second electrodes EL2 may, for example, pass through the protective layer PL to be electrically connected to the transistor of the light emitting unit. In some embodiments, the light emitting structure LEL1 and the light emitting structure LEL2 may correspond to the first light emitting unit LU1, the second light emitting unit LU2 and the third light emitting unit LU3, respectively, but not limited thereto. In some embodiments, other elements may be selectively arranged between the light emitting structure LEL1 and the light emitting structure LEL2. In some embodiments, the material of the light emitting structure LEL1 and the material of the light emitting structure LEL2 may be the same or different. In addition, the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 may be disposed on the substrate SU, and the substrate SU may be disposed relative to the array substrate (not shown), but not limited thereto. In some embodiments, the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 may be disposed on the same substrate as the light emitting element LE, and the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 may be disposed on the light emitting element LE, and the substrate SU may be a protective layer or a protective film, but not limited thereto. In some embodiments, the above-mentioned film layers (or elements) may be increased or decreased according to the conditions, and are not limited to the above-mentioned contents.

[0052] In addition, the stack structure of the light emitting element LE can be regarded as the integration of multiple light emitting elements, wherein the light emitting elements can be electrically connected in series, for example. In some embodiments, the light emitting elements can be arranged side by side in a horizontal manner, the charge generating layer can be arranged in the light emitting element, for example, and the light emitting elements can be electrically connected in parallel.

[0053] In some embodiments, one of the light-emitting units (e.g., the first light-emitting unit LU1, the second light-emitting unit LU2, or the third light-emitting unit LU3) may include at least one light source disposed in a light-emitting element (e.g., the first light-emitting element LE1, the second light-emitting element LE2, or the third light-emitting element LE3). The light source may include a light-emitting diode, a micro light-emitting diode, a sub-millimeter light-emitting diode, or a quantum dot light-emitting diode, but is not limited thereto. In some embodiments, one of the light-converting elements (e.g., the first light-converting element LCE1, the second light-converting element LCE2, or the third light-converting element LCE3) may be disposed on the top surface of the corresponding light source. In some embodiments, one of the light-converting elements (e.g., the first light-converting element LCE1, the second light-converting element LCE2, or the third light-converting element LCE3) may be disposed on (or covered on) the top surface and / or sidewall of the corresponding light source.

[0054] In summary, according to the spectrum of the first light and the second light emitted by the light emitting device, since the blue light (the sub-wave in the spectrum) in the first light and the second light is reduced, the phenomenon that the mixed light of the first light and the second light moves to the blue light region can be reduced. When the first light and the second light are used to generate a light of mixed colors, a light having a yellow or yellowish color can be obtained or provided by the light emitting device, and there is no need to set an additional yellow light emitting unit in the light emitting device. When the color space of the light emitting device is adjusted (for example, reducing blue light can be used to protect the eyes), it can retain the yellow region in the color space, or benefit the user's visual experience.

[0055] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A light emitting device, characterized in that: include: A light emitting unit, emitting an outgoing light, wherein the outgoing light has a spectrum, wherein the spectrum has a main peak between 520 nanometers and 780 nanometers, and wherein the spectrum has a sub-peak between 400 nanometers and 470 nanometers corresponding to a wavelength, wherein the outgoing light is red light or green light; Wherein the spectrum includes a first sub-peak integral from the wavelength minus 20 nanometers to the wavelength, the spectrum includes a second sub-peak integral from the wavelength to the wavelength plus 20 nanometers, and the ratio of the first sub-peak integral to the second sub-peak integral ranges from 20% to 98%.

2. The light emitting device according to claim 1, characterized in that: A light conversion element is also included.

3. The light emitting device according to claim 2, characterized in that: The light conversion element includes quantum dot material.

4. The light emitting device according to claim 1, characterized in that: The spectrum includes a sub-wave, the peak of the sub-wave is the sub-wave peak, the sub-wave peak has an intensity, the sub-wave corresponds to a first wavelength and a second wavelength at half of the intensity, the first wavelength is smaller than the second wavelength, the spectrum includes a third sub-wave peak integral from the first wavelength minus 20 nanometers to the first wavelength, the spectrum includes a fourth sub-wave peak integral from the second wavelength to the second wavelength plus 20 nanometers, and the ratio of the third sub-wave peak integral to the fourth sub-wave peak integral ranges from 4% to 30%.

5. The light emitting device according to claim 1, characterized in that: The light-emitting unit includes a light-emitting element and a light conversion element arranged on the light-emitting element.

6. The light emitting device according to claim 5, characterized in that: The light emitting element includes an organic light emitting material.

7. The light emitting device according to claim 5, characterized in that: The light-emitting unit further includes a light modulation layer disposed between the light-emitting element and the light conversion element.

8. The light emitting device according to claim 7, characterized in that: The light modulation layer includes a liquid crystal layer.

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