Establishment and extraction method of HEMT transistor charge model based on GaN process

Abstract

This invention discloses a method for establishing and extracting a charge model for HEMT transistors based on GaN technology, comprising: obtaining the gate-channel voltage based on externally input gate voltage, drain potential, and source potential; obtaining the gate charge based on gate charge density, number of gate elements, gate length, and width of a single gate element; obtaining the drain-source potential difference based on the drain potential and source potential; establishing a charge model based on the gate-channel voltage, gate charge, and drain-source potential difference to characterize the correlation between charge value and drain-source voltage after the transistor device is turned on; and differentiating the charge value of the charge model to establish a capacitance model to characterize the correlation between gate-source capacitance, gate-source voltage, and drain-source voltage. This invention supports the charge / capacitance description of HEMT transistors based on GaN technology, especially the description of the relationship between gate-source capacitance, gate-source voltage, and drain-source voltage after the channel is turned on, with high model accuracy.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for establishing and extracting charge models for HEMT transistors based on GaN technology. Background Technology

[0002] In GaN HEMT MMIC design, an accurate GaN HEMT device model is crucial to ensuring that the actual chip characteristics meet design specifications. Therefore, the transistor device model based on GaN HEMT technology needs to characterize both the DC and AC characteristics of the real device. Thus, in addition to incorporating parasitic resistance and capacitance effects, the model also needs to include current and charge models, such as... Figure 1 The diagram shown is the equivalent circuit diagram.

[0003] Currently, the Advanced SPICE Model (ASM) for gallium nitride devices, offered by the Compact Model Consortium (CMC), can be applied to the description of nonlinear charges. However, the ASM model is only applicable to a single drain voltage. The specific model is as follows: The simulation results of the ASM model are as follows: Figure 2 As shown, Figure 2 In the figure, the horizontal axis represents the gate-source voltage. The circled curves represent the measured gate-source capacitance, while the non-circled curves represent the simulated gate-source capacitance from the ASM model. Multiple curves represent the measured or simulated gate-source capacitance at different drain-source voltages. As can be seen from the figure, the correlation between the gate-source capacitance in the ASM model and the increase in drain-source voltage differs significantly from that in actual devices. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and propose a method for establishing and extracting the charge model of HEMT transistors based on GaN technology. The established transistor charge / capacitance model can support the charge / capacitance description of HEMT transistors based on GaN technology, especially the relationship between gate-source capacitance, gate-source voltage and drain-source voltage after the channel is turned on, and the accuracy of the model is effectively improved.

[0005] The technical solution adopted by this invention to solve its technical problem is:

[0006] On the one hand, a method for establishing a charge model for HEMT transistors based on GaN technology includes:

[0007] The gate channel voltage is obtained based on the externally input gate voltage, drain potential, and source potential.

[0008] The gate charge is obtained based on the gate charge density, the number of gates, the gate length, and the width of a single gate.

[0009] The drain-source potential difference is obtained based on the drain potential and the source potential.

[0010] Based on the gate-channel voltage, gate charge, and drain-source potential difference, a charge model is established to characterize the correlation between the charge value and the drain-source voltage after the transistor device is turned on.

[0011] Differentiate the charge value of the charge model to establish a capacitance model that characterizes the correlation between gate-source capacitance, gate-source voltage, and drain-source voltage.

[0012] Preferably, the gate-channel voltage is obtained based on the externally input gate voltage, drain potential, and source potential, as follows:

[0013]

[0014] Among them, V gm Indicates the gate-channel voltage; V g0 The gate voltage is represented by the external input; psid represents the drain potential; and psis represents the source potential.

[0015] Preferably, the gate charge is obtained based on the gate charge density, the number of gates, the gate length, and the width of a single gate, as follows:

[0016] C gq =Cg×w g ×nf×l g

[0017] Among them, C gq Cg represents the gate charge; Cg represents the gate charge density; w g Indicates the width of a single gate; nf represents the number of gates; l g Indicates the gate length.

[0018] Preferably, the drain-source potential difference is obtained based on the drain potential and the source potential, as follows:

[0019] psids = psid - psis

[0020] Where psids represents the drain-source potential difference; psid represents the drain potential; and psis represents the source potential.

[0021] Preferably, based on the gate-channel voltage, gate charge, and drain-source potential difference, a charge model is obtained to characterize the correlation between the charge value and the drain-source voltage after the transistor device is turned on, as follows:

[0022]

[0023] Among them, Q g C represents the charge value in the charge model. gp Represents gate charge; Vgm Represents the gate-channel voltage; psids represents the drain-source potential difference; V tv λ represents the threshold voltage; tanh represents the hyperbolic tangent function; λ represents the threshold voltage. A λ represents the first charge coefficient; B V represents the second charge coefficient; k represents the knee-point drain-source voltage; ln represents the logarithmic function.

[0024] On the other hand, a method for extracting charge model parameters of HEMT transistors based on GaN technology includes:

[0025] S501, obtain the test curve of the capacitance-voltage characteristic of the transistor;

[0026] S502, determine the calibration values ​​of the core parameters and the empirical initial values ​​of the auxiliary parameters in the transistor charge model; the core parameters are model parameters that affect the changing trend of the capacitance-voltage characteristics, and the calibration values ​​of the core parameters are determined according to the process / epitaxy settings, based on empirical calculation formulas, or by testing the transistor; the auxiliary parameters are model parameters that affect the changing accuracy of the capacitance-voltage characteristics; set the empirical initial values ​​of the auxiliary parameters as the adjustment values ​​of the auxiliary parameters;

[0027] S503, Substitute the calibration values ​​of the core parameters and the adjustment values ​​of the auxiliary parameters into the transistor model;

[0028] S504, Differentiate the charge value of the transistor model to obtain the corresponding capacitor model;

[0029] S505, Obtain the simulation curve of the capacitance-voltage characteristic of the capacitor model;

[0030] S506, determine whether the fitting error between the simulation curve and the test curve reaches a preset threshold; if yes, proceed to S507; if no, proceed to S508.

[0031] S507, the adjustment value of the auxiliary parameter is determined as the calibration value of the auxiliary parameter;

[0032] S508: After modifying the adjustment value of the auxiliary parameter, return to S503.

[0033] Preferably, the core parameters include voltage core parameters and charge core parameters; the voltage core parameters include gate-channel voltage, drain-source potential difference, and threshold voltage; the charge core parameters include gate charge; and the auxiliary parameters include a first charge coefficient and a second charge coefficient.

[0034] Preferably, the charge model of the transistor is represented as follows:

[0035]

[0036] Among them, Q g C represents the charge value in the charge model. gp Represents gate charge; V gm Represents the gate-channel voltage; psids represents the drain-source potential difference; V tv λ represents the threshold voltage; tanh represents the hyperbolic tangent function; λ represents the threshold voltage. A λ represents the first charge coefficient; B V represents the second charge coefficient; k represents the knee-point drain-source voltage; ln represents the logarithmic function.

[0037] Preferably, the gate channel voltage is expressed as follows:

[0038]

[0039] Among them, V gm Indicates the gate-channel voltage; V g0 The gate voltage is represented by the external input; psid represents the drain potential; psis represents the source potential.

[0040] The gate charge is represented as follows:

[0041] C gq =Cg×w g ×nf×l g

[0042] Among them, C gq Cg represents the gate charge; Cg represents the gate charge density; w g Indicates the width of a single gate; nf represents the number of gates; l g Indicates the gate length;

[0043] The drain-source potential difference is expressed as follows:

[0044] psids = psid - psis

[0045] Where psids represents the drain-source potential difference.

[0046] Preferably, the test curve for obtaining the capacitance-voltage characteristic of the transistor specifically includes:

[0047] Obtain the two-port S-parameter matrix of the transistor;

[0048] The two-port S-parameter matrix is ​​converted into a two-port Y-parameter matrix;

[0049] The gate-source capacitance of the transistor device is obtained based on the two-port Y-parameter matrix, and test curves of gate-source capacitance, gate-source voltage, and drain-source voltage are established.

[0050] The present invention has the following beneficial effects:

[0051] (1) The present invention provides a method for establishing a charge model of a HEMT transistor based on GaN technology. The established transistor charge / capacitance model can support the charge / capacitance description of HEMT transistors based on GaN technology, especially the relationship description of gate-source capacitance, gate-source voltage and drain-source voltage after the channel is turned on, and the accuracy of the model is effectively improved.

[0052] (2) The present invention provides a method for extracting charge model parameters of HEMT transistors based on GaN technology. The model parameters in the transistor model are divided into core parameters and auxiliary parameters. Furthermore, for the auxiliary parameters that have a smaller impact on the capacitance-voltage characteristics, a simpler simulation fitting calibration method is used for calibration, thereby saving complex research calculations, saving manpower and time, improving calibration efficiency and ensuring the accuracy of the results.

[0053] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments, but the method for establishing a charge model and extracting model parameters of a HEMT transistor based on GaN technology is not limited to the embodiments of the present invention. Attached Figure Description

[0054] Figure 1 The equivalent circuit of a traditional GaN-based HEMT transistor model;

[0055] Figure 2 This is a comparison chart of simulation curves and test curves for a traditional GaN-based HEMT transistor capacitor model.

[0056] Figure 3 This is a flowchart of the method for establishing a charge model for a GaN-based HEMT transistor according to the present invention.

[0057] Figure 4 This is a comparison graph of the simulation curve and the test curve of the capacitance model of the method of the present invention;

[0058] Figure 5 This is a flowchart of the transistor charge model parameter extraction method of the present invention. Detailed Implementation

[0059] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the embodiments of the present invention.

[0060] See Figure 3 As shown, the present invention provides a method for establishing a charge model of a HEMT transistor based on GaN technology, comprising:

[0061] S301 obtains the gate channel voltage based on the externally input gate voltage, drain potential, and source potential;

[0062] S302, the gate charge is obtained based on the gate charge density, the number of gates, the gate length, and the width of a single gate;

[0063] S303 obtains the drain-source potential difference based on the drain potential and the source potential;

[0064] S304, Based on the gate channel voltage, gate charge, and drain-source potential difference, establish a charge model to characterize the correlation between charge value and drain-source voltage after the transistor device is turned on;

[0065] S305, Differentiate the charge value of the charge model to establish a capacitance model for characterizing the correlation between gate-source capacitance, gate-source voltage and drain-source voltage.

[0066] In this embodiment, the gate channel voltage is obtained based on the externally input gate voltage, drain potential, and source potential, as follows:

[0067]

[0068] Among them, V gm Indicates the gate-channel voltage; V g0 The gate voltage is represented by the external input; psid represents the drain potential; and psis represents the source potential.

[0069] Specifically, the V g0 This represents the gate voltage externally input to the transistor. Gate-channel voltage V0 gm The drain potential psid and source potential psis are parameters set according to the HEMT process and / or epitaxy, or the gate channel voltage V. gm The drain potential psid and source potential psis are determined based on empirical calculation formulas.

[0070] In this embodiment, the gate charge is obtained based on the gate charge density, the number of gate elements, the gate length, and the width of a single gate element, as follows:

[0071] C gq =Cg×w g ×nf×l g

[0072] Among them, C gq Cg represents the gate charge; Cg represents the gate charge density; w gIndicates the width of a single gate; nf represents the number of gates; l g Indicates the gate length.

[0073] In this embodiment, the drain-source potential difference is obtained based on the drain potential and the source potential, as follows:

[0074] psids = psid - psis

[0075] Where psids represents the drain-source potential difference.

[0076] Similarly, the drain potential psid and the source potential psis are parameters set according to the HEMT process and / or epitaxy, or the drain potential psid and the source potential psis are determined based on empirical calculation formulas.

[0077] In this embodiment, based on the gate-channel voltage, gate charge, and drain-source potential difference, a charge model is obtained to characterize the correlation between the charge value and the drain-source voltage after the transistor device is turned on, as follows:

[0078]

[0079] Among them, Q g C represents the charge value in the charge model. gp Represents gate charge; V gm Represents the gate-channel voltage; psids represents the drain-source potential difference; V tv λ represents the threshold voltage; tanh represents the hyperbolic tangent function; λ represents the threshold voltage. A λ represents the first charge coefficient; B V represents the second charge coefficient; k represents the knee-point drain-source voltage; ln represents the logarithmic function.

[0080] Specifically, the gate charge C gp Gate-channel voltage V gm The drain-source potential difference (psids) is determined based on a calculation formula. Threshold voltage V tv These are parameters set according to the transistor's process and / or epitaxy. The knee-point drain-source voltage refers to the boundary between the linear operating region and the saturation operating region of a HEMT device. When the device is biased below the knee-point voltage, it operates in the linear region; when the device is biased above the knee-point voltage, it operates in the saturation region. The knee-point drain-source voltage can be obtained from the DC output characteristic curve. The first charge coefficient λ A Second charge coefficient λ B Calibration is required through simulation fitting calibration methods.

[0081] Furthermore, by differentiating the charge values ​​of the charge model, a capacitance model can be established to characterize the correlation between gate-source capacitance, gate-source voltage, and drain-source voltage. Differentiating the charge values ​​of the charge model is a conventional mathematical method; the specific capacitance model is not given in this embodiment.

[0082] Furthermore, after establishing the charge model and capacitance model according to the above method, a comparison chart of the model of this invention and the test curve is shown below. Figure 4 (C in the picture) gs This represents the drain-source capacitance, V. g V represents the gate voltage. ds The drain-source voltage is shown in the figure. As can be seen from the comparison graph, the model of this invention can fit the correlation differences caused by changes in drain-source voltage quite well.

[0083] This invention provides a method for establishing a charge model of a GaN-based HEMT transistor. The established transistor charge / capacitance model can support the charge / capacitance description of GaN-based HEMT transistors, especially the relationship between gate-source capacitance, gate-source voltage, and drain-source voltage after channel turn-on, effectively improving the model accuracy.

[0084] See Figure 5 As shown, a method for extracting charge model parameters of HEMT transistors based on GaN technology includes:

[0085] S501, obtain the test curve of the capacitance-voltage characteristic of the transistor;

[0086] S502, determine the calibration values ​​of the core parameters and the empirical initial values ​​of the auxiliary parameters in the transistor charge model; the core parameters are model parameters that affect the changing trend of the capacitance-voltage characteristics, and the calibration values ​​of the core parameters are determined according to the process / epitaxy settings, based on empirical calculation formulas, or by testing the transistor; the auxiliary parameters are model parameters that affect the changing accuracy of the capacitance-voltage characteristics; set the empirical initial values ​​of the auxiliary parameters as the adjustment values ​​of the auxiliary parameters;

[0087] S503, Substitute the calibration values ​​of the core parameters and the adjustment values ​​of the auxiliary parameters into the transistor model;

[0088] S504, Differentiate the charge value of the transistor model to obtain the corresponding capacitor model;

[0089] S505, Obtain the simulation curve of the capacitance-voltage characteristic of the capacitor model;

[0090] S506, determine whether the fitting error between the simulation curve and the test curve reaches a preset threshold; if yes, proceed to S507; if no, proceed to S508.

[0091] S507, the adjustment value of the auxiliary parameter is determined as the calibration value of the auxiliary parameter;

[0092] S508: After modifying the adjustment value of the auxiliary parameter, return to S503.

[0093] It should be noted that the amount of adjustment value to be modified each time can be determined according to the actual application, and this embodiment does not make a specific limitation.

[0094] In this embodiment, the core parameters include voltage core parameters and charge core parameters; the voltage core parameters include gate-channel voltage, drain-source potential difference, and threshold voltage; the charge core parameters include gate charge; and the auxiliary parameters include a first charge coefficient and a second charge coefficient.

[0095] Specifically, the transistor charge model parameter extraction method provided in this application mainly includes the determination of two types of model parameters: core parameters and auxiliary parameters. Among them, the core parameters play a major role in the variation trend of the capacitance-voltage characteristic of the transistor. When the core parameters change, they will affect the direction and trend of the entire capacitance-voltage characteristic curve. In contrast, the auxiliary parameters have a smaller impact on the capacitance-voltage characteristic curve. Changes in the auxiliary parameters will affect the accuracy of the capacitance-voltage characteristic curve within a small range.

[0096] Given the different effects of core parameters and auxiliary parameters, this invention can first determine the calibration values ​​of the core parameters, and then fine-tune the auxiliary parameters based on the determined core parameters until the simulation curve obtained based on the transistor capacitor model is basically consistent with the test curve of the Schottky diode, thereby determining the calibration values ​​of the auxiliary parameters.

[0097] In this embodiment, the charge model of the transistor is represented as follows:

[0098]

[0099] Among them, Q g C represents the charge value in the charge model. gp Represents gate charge; V gm Represents the gate-channel voltage; psids represents the drain-source potential difference; V tv λ represents the threshold voltage; tanh represents the hyperbolic tangent function; λ represents the threshold voltage. A λ represents the first charge coefficient; B V represents the second charge coefficient; k represents the knee-point drain-source voltage; ln represents the logarithmic function.

[0100] Preferably, the gate channel voltage is expressed as follows:

[0101]

[0102] Among them, V gm Indicates the gate-channel voltage; V g0 The gate voltage is represented by the external input; psid represents the drain potential; psis represents the source potential.

[0103] The gate charge is represented as follows:

[0104] C gq =Cg×w g ×nf×l g

[0105] Among them, C gq Cg represents the gate charge; Cg represents the gate charge density; w g Indicates the width of a single gate; nf represents the number of gates; l g Indicates the gate length;

[0106] The drain-source potential difference is expressed as follows:

[0107] psids = psid - psis

[0108] Where psids represents the drain-source potential difference.

[0109] Specifically, the V g0 This represents the gate voltage externally input to the transistor. Gate-channel voltage V0 gm The drain potential psid and source potential psis are parameters set according to the HEMT process and / or epitaxy, or the gate channel voltage V. gm The drain potential psid and source potential psis are determined based on empirical calculation formulas. Correspondingly, the gate charge C... gp Gate-channel voltage V gm The drain-source potential difference (psids) is determined based on a calculation formula. Threshold voltage V tv These are parameters set according to the transistor's process and / or epitaxy. The knee-point drain-source voltage refers to the boundary between the linear operating region and the saturation operating region of a HEMT device. When the device is biased below the knee-point voltage, it operates in the linear region; when the device is biased above the knee-point voltage, it operates in the saturation region. The knee-point drain-source voltage can be obtained from the DC output characteristic curve. The first charge coefficient λ A Second charge coefficient λ B Calibration is required through simulation fitting calibration methods.

[0110] Furthermore, test curves of the transistor's capacitance-voltage characteristics are obtained, specifically including:

[0111] Obtain the two-port S-parameter matrix of the transistor;

[0112] The two-port S-parameter matrix is ​​converted into a two-port Y-parameter matrix;

[0113] The gate-source capacitance of the transistor device is obtained based on the two-port Y-parameter matrix, and test curves of gate-source capacitance, gate-source voltage, and drain-source voltage are established.

[0114] Specifically, the two-port S-parameter matrix Convert to a two-port Y-parameter matrix The formula is as follows:

[0115]

[0116]

[0117]

[0118]

[0119] This method is existing technology and will not be described in detail in this embodiment.

[0120] Furthermore, the gate-source capacitance of the transistor device is obtained based on the two-port Y-parameter matrix, using the following formula:

[0121]

[0122] This invention discloses a method for extracting charge model parameters of HEMT transistors based on GaN technology. The method distinguishes the model parameters in the transistor model into core parameters and auxiliary parameters. Furthermore, for the auxiliary parameters that have a relatively small impact on the capacitance-voltage characteristics, a simpler simulation fitting calibration method is used for calibration, thereby saving complex research calculations, saving manpower and time, improving calibration efficiency and ensuring the accuracy of the results.

[0123] The above are merely specific embodiments of the present invention, but the design concept of the present invention is not limited thereto. Any non-substantial modifications made to the present invention using this concept shall be considered as infringing upon the protection scope of the present invention.

[0124] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements can be made without departing from the principle of the present invention, and these improvements should also be considered within the scope of protection of the present invention.

Claims

1. A method for establishing a charge model for a HEMT transistor based on GaN technology, characterized in that, include: The gate channel voltage is obtained based on the externally input gate voltage, drain potential, and source potential. The gate charge is obtained based on the gate charge density, the number of gates, the gate length, and the width of a single gate. The drain-source potential difference is obtained based on the drain potential and the source potential. Based on the gate-channel voltage, gate charge, and drain-source potential difference, a charge model is established to characterize the correlation between the charge value and the drain-source voltage after the transistor device is turned on. Differentiate the charge value of the charge model to establish a capacitance model that characterizes the correlation between gate-source capacitance, gate-source voltage, and drain-source voltage; Based on the gate-channel voltage, gate charge, and drain-source potential difference, a charge model is obtained to characterize the correlation between the charge value and the drain-source voltage after the transistor device is turned on, as follows: ； in, This represents the charge value in the charge model; Indicates gate charge; Indicates the gate-channel voltage; This represents the drain-source potential difference; Indicates the threshold voltage; Represents the hyperbolic tangent function; Indicates the first charge coefficient; Indicates the second charge coefficient; This represents the knee-point drain-source voltage; Represents a logarithmic function.

2. The method for establishing a charge model for a GaN-based HEMT transistor according to claim 1, characterized in that, The gate-channel voltage is obtained based on the externally input gate voltage, drain potential, and source potential, as follows: ； in, Indicates the gate-channel voltage; Indicates the externally input gate voltage; Indicates the drain potential; This represents the source potential.

3. The method for establishing a charge model for a GaN-based HEMT transistor according to claim 1, characterized in that, The gate charge is obtained based on the gate charge density, the number of gate elements, the gate length, and the width of a single gate element, as follows: ； in, Indicates gate charge; Indicates the gate charge density; Indicates the width of a single gate; Indicates the number of gate roots; Indicates the gate length.

4. The method for establishing a charge model for a GaN-based HEMT transistor according to claim 1, characterized in that, Based on the drain potential and source potential, the drain-source potential difference is obtained as follows: ； in, This represents the drain-source potential difference; Indicates the drain potential; This represents the source potential.

5. A method for extracting charge model parameters of HEMT transistors based on GaN technology, characterized in that, include: S501, obtain the test curve of the capacitance-voltage characteristic of the transistor; S502, determine the calibration values ​​of the core parameters and the empirical initial values ​​of the auxiliary parameters in the charge model of the transistor; the core parameters are model parameters that affect the changing trend of the capacitance-voltage characteristics, and the calibration values ​​of the core parameters are determined according to the process / epitaxy settings, based on empirical calculation formulas, or by testing the transistor; the auxiliary parameters are model parameters that affect the changing accuracy of the capacitance-voltage characteristics; set the empirical initial values ​​of the auxiliary parameters as the adjustment values ​​of the auxiliary parameters; S503, Substitute the calibration values ​​of the core parameters and the adjustment values ​​of the auxiliary parameters into the charge model of the transistor; S504, Differentiate the charge value of the charge model of the transistor to obtain the corresponding capacitance model; S505, Obtain the simulation curve of the capacitance-voltage characteristic of the capacitor model; S506, determine whether the fitting error between the simulation curve and the test curve reaches a preset threshold; if yes, proceed to S507; if no, proceed to S508. S507, the adjustment value of the auxiliary parameter is determined as the calibration value of the auxiliary parameter; S508, after modifying the adjustment value of the auxiliary parameter, return to S503; The charge model of the transistor is as follows: ； in, This represents the charge value in the charge model; Indicates gate charge; Indicates the gate-channel voltage; This represents the drain-source potential difference; Indicates the threshold voltage; Represents the hyperbolic tangent function; Indicates the first charge coefficient; Indicates the second charge coefficient; This represents the knee-point drain-source voltage; Represents a logarithmic function.

6. The method for extracting charge model parameters of HEMT transistors based on GaN technology according to claim 5, characterized in that, The core parameters include voltage core parameters and charge core parameters; the voltage core parameters include gate-channel voltage, drain-source potential difference, and threshold voltage; the charge core parameters include gate charge; and the auxiliary parameters include a first charge coefficient and a second charge coefficient.

7. The method for extracting charge model parameters of HEMT transistors based on GaN technology according to claim 5, characterized in that, The gate-channel voltage is expressed as follows: ； in, Indicates the gate-channel voltage; Indicates the externally input gate voltage; Indicates the drain potential; Indicates the source potential; The gate charge is represented as follows: ； in, Indicates gate charge; Indicates the gate charge density; Indicates the width of a single gate; Indicates the number of gate roots; Indicates the gate length; The drain-source potential difference is expressed as follows: ； in, This represents the drain-source potential difference.

8. The method for extracting charge model parameters of HEMT transistors based on GaN technology according to claim 5, characterized in that, Obtain the test curves of the transistor's capacitance-voltage characteristics, specifically including: Obtain the two-port S-parameter matrix of the transistor; The two-port S-parameter matrix is ​​converted into a two-port Y-parameter matrix; The gate-source capacitance of the transistor device is obtained based on the two-port Y-parameter matrix, and test curves of gate-source capacitance, gate-source voltage, and drain-source voltage are established.

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